Space type atomic layer deposition equipment

Abstract

The invention discloses space type atomic layer deposition equipment, which comprises a reaction chamber, the reaction chamber comprises a first side wall and a second side wall, the first side wall is provided with a loading disc inlet (10a), the second side wall is provided with a loading disc outlet (10b), and the loading disc inlet (10a) is communicated with the loading disc outlet (10b); a carrying disc carrying a substrate can pass through the carrying disc inlet to enter the reaction chamber, and can pass through the carrying disc outlet to leave the reaction chamber; the spraying module (3) comprises an air outlet surface, a plurality of air outlet holes are formed in the air outlet surface, the spraying module is arranged at the bottom of the reaction chamber, and the air outlet surface faces the top of the reaction chamber; and the carrying disc transmission device is used for driving a carrying disc (4) to translate in the reaction chamber, so that the to-be-deposited surface of the substrate is opposite to the gas outlet surface.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor and pan-semiconductor equipment, and in particular, to a spatial atomic layer deposition device. Background Art

[0002] Semiconductor devices generally include a substrate and multiple layers of patterns or films formed on the substrate. For example, a photovoltaic cell includes an electron transport layer.

[0003] The film thickness of the electron transport layer is usually in the range of 20 to 50 nm. In order to precisely control the formation of the film, a gas deposition process may be used.

[0004] For example, when preparing the electron transport layer, evaporation process and atomic layer deposition process are often used to prepare a nanometer-level film thickness, but the existing atomic layer deposition process has low production efficiency and is not compatible with front-end and back-end coating equipment.

[0005] Therefore, the need to develop a new atomic layer deposition equipment structure to improve efficiency is a technical problem that needs to be urgently solved in this field. Summary of the invention

[0006] The present invention aims to solve one of the technical problems in the related art to a certain extent. To this end, the present invention provides a.

[0007] In order to achieve the above-mentioned object, as a first aspect of the present invention, a space-type atomic layer deposition device is disclosed, and the space-type atomic layer deposition device comprises: A reaction chamber, the reaction chamber comprising a first side wall and a second side wall, the first side wall being provided with a tray inlet, the second side wall being provided with a tray outlet, the tray carrying the substrate being able to pass through the tray inlet to enter the reaction chamber, and being able to pass through the tray outlet to leave the reaction chamber; A spray module, the spray module comprising a gas outlet surface, a plurality of gas outlet holes are formed on the gas outlet surface, the spray module is arranged at the bottom of the reaction chamber, and the gas outlet surface faces the top of the reaction chamber; The carrier plate transport device is used to drive the carrier plate to translate in the reaction chamber so that the surface to be deposited on the substrate is opposite to the gas outlet surface.

[0008] Further, the first side wall is arranged opposite to the second side wall, and the reaction chamber also includes a third side wall and a fourth side wall, the third side wall is arranged opposite to the fourth side wall, a plurality of first transmission holes are arranged on the third side wall along the transmission direction, and a plurality of second transmission holes are arranged on the fourth side wall along the transmission direction, the carrier transmission device includes an active transmission device and a driven transmission device, the active transmission device and the driven transmission device are used to carry and drive the carrier from both sides of the carrier to translate in the reaction chamber, the active transmission device is arranged on the third side wall through the first transmission hole, and the driven transmission device is arranged on the fourth side wall through the second transmission hole, and the plurality of first transmission holes correspond one to one with the plurality of second transmission holes.

[0009] Furthermore, the active transmission device is connected to the motor and driven by electrodes, and the active transmission device transmits the driven transmission device via a transmission rod to achieve synchronous transmission.

[0010] Further, the active transmission device and the driven transmission device each include a plurality of transmission bodies, a plurality of synchronous belts and a plurality of auxiliary transmission parts, the plurality of transmission bodies are arranged at intervals along the transmission direction, the auxiliary transmission parts are arranged between adjacent transmission bodies, and any adjacent transmission bodies and the auxiliary transmission parts therebetween are connected by the synchronous belts, so that the plurality of transmission bodies can be synchronously transmitted. The transmission body is inserted into the first transmission hole or the second transmission hole to form a transmission shaft. The plurality of transmission shafts can rotate in the same direction to carry and transmit the carrier.

[0011] Further, the transmission shaft includes an extension portion, a carrier plate contact portion and a limiting portion, the extension portion, the carrier plate contact portion and the limiting portion are arranged and connected along the axial direction of the transmission shaft, the limiting portion is arranged between the extension portion and the carrier plate contact portion, the carrier plate contact portion is used to carry and transmit the carrier plate, and the outer diameter of the limiting portion is larger than the outer diameter of the carrier plate contact portion, so that the limiting portion limits the carrier plate in the width direction.

[0012] Furthermore, the spray module is provided with a plurality of installation notches at the edges near the third side wall and the fourth side wall, and the plurality of installation notches are arranged at intervals along the transmission direction. The plurality of installation notches correspond to the plurality of transmission shafts, and the shape of the installation notches matches the transmission shaft, so that there is a gap between the spray module and the plurality of adjacent transmission shafts.

[0013] Furthermore, the atomic layer deposition apparatus further comprises baffles arranged relatively along the width direction of the reaction chamber, the baffles being arranged between the spray module and the side wall of the reaction chamber, the baffles and the side wall enclosing the spray module, The baffle is located on the lower side of the transmission shaft, and includes a plurality of grooves arranged along the length direction. The plurality of grooves correspond one-to-one to the plurality of transmission shafts, and the shape of the grooves matches the transmission shaft, so that the grooves can accommodate part of the transmission shaft in the axial direction of the transmission shaft.

[0014] Furthermore, the baffle includes a plurality of reinforcing structures, which are arranged at intervals along the transmission direction, and the reinforcing structures include a connecting portion and a fixing portion, the connecting portion is arranged on the side wall of the baffle, and the fixing portion supports and fixes the baffle through the connecting portion, and the baffle is fixedly connected to the bottom surface of the reaction chamber through the fixing portion.

[0015] Furthermore, the spray module further comprises a plurality of support and limit members, wherein the support and limit members are arranged between the spray module and the bottom of the reaction chamber, and are used to support the spray module and ensure a set interval between the spray module and the carrier.

[0016] Furthermore, the support limiter includes a plurality of limit rods and a plurality of adjustment mechanisms, and the spray module includes a plurality of first limit holes. The first end of the limiting rod is fixedly connected to the bottom of the reaction chamber, and the second end of the limiting rod is movably connected to the spray module through the first limiting hole, so that the spray module is limited through the first limiting hole. Two ends of the adjustment mechanism are fixedly connected to the bottom of the reaction chamber and the spray module respectively, and the adjustment structure is used to adjust the distance between the spray module and the carrier.

[0017] Furthermore, the set interval is between 2 mm and 10 mm.

[0018] Furthermore, the spatial atomic layer deposition equipment also includes a carrier, which is carried by the carrier transmission device, and a plurality of accommodating holes are formed on the carrier, and the plurality of accommodating holes are arranged in a plurality of rows and columns along the transmission direction, and the accommodating holes form a step structure along the thickness direction of the carrier, and the step structure has a substrate carrying surface, and the carrier supports the substrate through the substrate carrying surface.

[0019] Furthermore, the space-type atomic layer deposition equipment also includes an upper chamber cover and a heating module, wherein the upper chamber cover is used to close the reaction chamber from the top of the reaction chamber, and the heating module is arranged on the upper chamber cover.

[0020] Furthermore, the heating module includes multiple heating elements and multiple heating plates, and the multiple heating elements are fixedly connected to the upper chamber cover and the heating plates. The heating elements are used to transfer electrical energy from the outside into the reaction chamber to heat the heating plates, and the multiple heating plates are arranged along the transmission direction.

[0021] Furthermore, the plurality of heating plates include a middle heating plate and an edge heating plate, and a size of the middle heating plate along the transmission direction is larger than a size of the edge heating plate along the transmission direction.

[0022] Furthermore, multiple limiting fixing holes are opened on the heating plates, and the heating module also includes a fastener, and the fastener passes through the limiting fixing holes and is fixedly connected to the upper cavity cover, so that the heating plate is fixedly connected to the upper cavity cover, and multiple limiting fixing holes are arranged along the edge of the heating plate, and multiple limiting fixing holes have limiting spaces along the transmission direction and / or the width direction of the reaction chamber.

[0023] Furthermore, the space-type atomic layer deposition equipment also includes a vacuum system, which includes a plurality of vacuum pipelines, and the vacuum pipelines are arranged at the lower side of the spray module in the reaction chamber. The plurality of vacuum pipelines are arranged at intervals along the transmission direction, and the vacuum pipelines include a plurality of exhaust ports, so that the gas exhausted from the spray module is discharged from the lower side through the exhaust ports.

[0024] Furthermore, the spatial atomic layer deposition equipment also includes a valve system, which is respectively connected to the carrier inlet and the carrier outlet, and the carrier inlet and the carrier outlet are also provided with a plurality of fixed installation countersunk holes, which are used to be fixedly connected to the valve system.

[0025] The spatial atomic layer deposition equipment of the present application has the characteristics of small particle pollution, simple operation, and high production efficiency, and the deposited film layer has higher quality. The spray module is arranged at the bottom of the reaction chamber, so that the gas source sprays upward to realize the bottom-up atomic layer coating process. While the deposition quality is higher, it can also reduce the pollution of the film layer by particles, polymers, etc. in the cavity. In addition, the upward deposition coating can adapt to the operation mode of other coating equipment in the existing production line. It can be integrated for coating, reduce the number of cleaning times, reduce the frequency of breaking the air, and do not require additional flipping processing, which greatly improves production efficiency and ease of operation and reduces labor costs.

[0026] These features and advantages of the present invention will be disclosed in detail in the following specific embodiments and drawings. The best embodiments or means of the present invention will be described in detail in conjunction with the drawings, but they are not intended to limit the technical solutions of the present invention. In addition, there are multiple features, elements, and components that appear in each of the following texts and drawings, and different symbols or numbers are marked for convenience, but they all represent components with the same or similar structures or functions. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] The present invention will be further described below in conjunction with the accompanying drawings: Figure 1 It is a schematic diagram of the exploded structure of an embodiment of the space-type atomic layer deposition device provided by the present invention; Figure 2 It is a schematic diagram of the principle structure of the space-type atomic layer deposition device provided by the present invention; Figure 3 It is a schematic diagram of the connection structure between the spray module and the reaction chamber provided by the present invention; Figure 4 It is a schematic diagram of an embodiment of a spatial atomic layer deposition device provided by the present invention; Figure 5 It is a structural schematic diagram of an embodiment of a spatial atomic layer deposition device provided by the present invention; Figure 6 It is a schematic diagram of the exploded structure of an embodiment of the space-type atomic layer deposition device provided by the present invention; Figure 7 It is a gas distribution diagram simulated by the spray module provided by the present invention.

[0028] Description of Reference Numerals 1: Space-type atomic layer deposition equipment; 2: Carrier transport device; 3: Spray module; 4: Carrier; 5: Heating module; 6: Gas supply system; 7: Vacuum system; 8: Upper chamber cover; 9: Chamber cover opening and closing mechanism; 10: Valve system; 1a: Bottom surface; 1c: First transmission hole 2a: Active transmission device; 2b: Driven transmission device; 2c: Motor; 2d: Transmission rod 21: Transmission body; 22: Synchronous belt; 23: Auxiliary transmission parts; 210: synchronous wheel; 212: sealed magnetic fluid; 213: transmission shaft; 213a: extension portion; 213b: limiting portion; 213c: carrier contact portion; 31: limit rod; 32: adjustment mechanism; 33: installation notch; 34: air intake module; 35: first limit hole; 3a: first precursor air hole; 3b: second precursor air hole; 3c: isolation air hole; 41: Accommodation hole; 42: Reinforcement rib; 51: Heating element; 52: Heat insulation board; 52a: Heat insulation board notch; 53: Limit fixing hole 7a: vacuum line; 7a1: exhaust port 10a: tray inlet; 10b: tray outlet; 11: baffle; 111: groove; 112: reinforcement structure DETAILED DESCRIPTION Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements with the same or similar functions. The embodiments in the implementation manner are intended to be used to explain the present invention and should not be construed as limiting the present invention.

[0029] References to "one embodiment" or "an example" or "an example" in this specification mean that a particular feature, structure, or characteristic described in conjunction with the embodiment itself may be included in at least one embodiment disclosed in the present application. The appearance of the phrase "in one embodiment" in various places in the specification does not necessarily refer to the same embodiment.

[0030] In the evaporation process, the evaporation source needs to be heated and vaporized. Due to the influence of thermal expansion and contraction, the gas will rise. Therefore, in the evaporation chamber, the evaporation source is usually placed below the chamber and the substrate is placed above the chamber. The rising gas solidifies after encountering the substrate to form a film layer.

[0031] In the atomic layer deposition process, the gaseous process gas is directly introduced into the chamber through spraying, and is deposited on the substrate under the action of the spraying gas pressure and the gravity of the gas. Therefore, in the atomic layer deposition process, the substrate is usually placed below the chamber, and the gas spray module for spraying the gas is placed above the chamber.

[0032] With the increase in the types of semiconductor devices, there has been a situation where the first film layer is made by an evaporation process and the second film layer is made by an atomic layer deposition process.

[0033] For example, in a perovskite battery, the electron transport layer includes stacked C60 and SnO2 film layers, wherein the C60 is made by an evaporation process, and the SnO2 layer is made by an atomic layer deposition process. After the C60 layer is made by an evaporation process in the evaporation chamber, it is necessary to break the air to take the carrier out of the evaporation chamber and put it into the transfer chamber. After the transfer chamber is broken, the carrier is taken out of the transfer chamber. After manual flipping, the carrier is transferred into the atomic layer deposition transfer chamber, and then evacuated. After the vacuum degree of the transfer chamber is consistent with that of the atomic layer deposition chamber, the carrier is transferred into the atomic layer deposition chamber for atomic layer deposition. On the one hand, the above-mentioned coating method will result in an additional breaking and vacuuming when transferring from evaporation to the atomic layer deposition chamber, which will result in long production time and low efficiency. Secondly, after the substrate is evaporated with C60, it is taken out of the evaporation equipment and needs to be manually turned over for atomic layer deposition, which will cause particle contamination and inconvenience in manual operation. In addition, due to the difference in upper and lower coatings, these two coating equipment cannot be integrated together to achieve continuous vacuum coating.

[0034] Due to the particularity of the evaporation equipment, specifically, the evaporation material evaporates upward naturally after being heated and evaporated, so its evaporation direction is also from bottom to top, which requires that the evaporation port of the evaporation source must be set upward, otherwise the evaporation material will flow out of the evaporation crucible due to gravity. However, if the evaporation source is set at the top of the evaporation chamber to evaporate the upper surface of the substrate in order to adapt the evaporation to atomic layer deposition, it is necessary to set a special pipeline direction, that is, to change the direction of the beam in the pipeline through the pipeline to complete the downward evaporation of the evaporation material, so as to coat the upper surface of the substrate; or, a special-shaped crucible is used, and the outlet of the special-shaped crucible is turned downward by a specific processing method. The above two methods will make the evaporation equipment structure extremely complicated and difficult to implement, and the equipment processing and use costs will increase sharply. In addition, the evaporation material is easy to be deposited on the pipeline in a special direction or on the inner wall of the special-shaped crucible, resulting in a large amount of waste of evaporation material. The materials deposited on the inner wall of the pipe or crucible are difficult to remove, and the evaporation materials remaining in the pipe will limit the evaporation equipment to be used for the evaporation of a single material, and other evaporation materials cannot be added, otherwise it will cause cross contamination of materials. In addition, the pipe and the special-shaped crucible will significantly affect the evaporation beam, reduce the evaporation efficiency, and thus reduce the overall efficiency of continuous coating. At the same time, the top-to-bottom evaporation method will also produce additional particle contamination on the substrate surface, which is not conducive to improving the quality of the film layer.

[0035] In view of this, the present application has innovatively invented a bottom-up atomic layer deposition method (hereinafter referred to as bottom coating). Due to the spray structure of atomic layer deposition, the reaction gas can be sprayed out from the outlet at a certain spray pressure. Therefore, the spray module is arranged at the bottom of the reaction chamber, and the reaction gas sprays the substrate upward. The spray pressure can overcome the gravity of the reaction gas itself, thereby obtaining a deposition effect consistent with the traditional top-down atomic layer deposition method. And because the atomic layer deposition is changed to a chamber structure of spraying from bottom to top, the atomic layer deposition equipment can be connected to the evaporation equipment through a transfer valve. There is no need to set up additional transfer-out chamber and transfer-in chamber between the two chambers, nor is there any need to add feeding and discharging devices. Therefore, after the C60 is evaporated on the perovskite battery substrate, there is no need to break the air from the transfer chamber to take out the carrier, and there is no need to transfer the carrier into the transfer chamber. The carrier can be directly transferred from the evaporation chamber through the transfer valve into the atomic layer reaction chamber to complete the SnO2 coating on the lower surface. In this step, no additional breaking of the air is required, and no additional flipping of the wafer is required. After the deposition is completed, the substrate is transferred to obtain a perovskite substrate with C60 and SnO2 continuously deposited. This deposition method reduces the number of breaking of the air, reduces the breaking time, and does not require substrate flipping, can achieve continuous vacuum coating, and improves production efficiency.

[0036] In addition, the atomic layer reaction chamber for lower surface deposition of the present invention is capable of fully adapting to the evaporation structure of the previous evaporation chamber because it deposits a coating on the lower surface of the substrate. There is no need to improve the evaporation chamber, and continuous coating can be achieved under vacuum. After C60 is evaporated on the lower surface of the substrate, it is transferred into the atomic layer deposition chamber through the carrier plate, and the spray module further continues to spray and deposit the C60 layer on the lower surface of the substrate. Even if particle contamination occurs, it will quickly fall to the bottom of the chamber due to gravity, and will not contaminate the lower surface of the substrate, thereby not affecting the evaporated film layer.

[0037] However, the atomic layer deposition equipment of the present application is not limited to the deposition of SnO2, but can also be other metal oxides. The evaporation is not limited to C60, and is not limited to evaporation equipment. Any front-end and back-end coating equipment that is a bottom-up coating or deposition method can be adapted to the atomic layer deposition equipment of the present application to achieve vacuum continuous coating.

[0038] Atomic layer deposition (ALD) is an advanced thin film deposition technology that introduces two or more chemical gas precursors into the reaction chamber separately, allowing each precursor to undergo a fully saturated surface chemical reaction on the substrate surface, thereby coating the substance on the substrate surface in the form of a single atomic layer, and can accurately control the thickness and uniformity of the deposited film. This technology can form high-quality, pinhole-free, conformal films on non-planar complex structures and three-dimensional structure surfaces, and has been widely used in the manufacturing fields of semiconductors, photovoltaic cells, etc.

[0039] At present, the space-type ALD deposition equipment in the industry usually adopts a structure in which a spray module is installed on the chamber cover and located above the substrate, and a heating module is installed inside the chamber and located below the substrate, and the substrate is placed between the spray plate and the heating module.

[0040] The inventors of this application have found that although the structure can complete thin film deposition, since ALD is a saturated coating, there will be residual dust from the reaction left on the surface of the film, and the inert gas cannot completely blow the dust off the surface, resulting in the dust affecting the quality and uniformity of the film when the lower film is coated. In addition, it is also found that the heating module is located inside the cavity, and the space is limited. In order to avoid the transmission parts, the overall wrapping of the heating module to the substrate is poor. Because of the edge effect, it will affect the thermal uniformity of the substrate, thereby affecting the uniformity of the film. In addition, for existing thin film preparation equipment, except for ALD, lower surface coating is generally used. At present, ALD is connected with the previous and next processes, and the substrate needs to be flipped. For large-area thin film preparation equipment, it is not easy to flip the substrate in the cavity, and it is inevitable to complete this flipping action outside the equipment. Therefore, the substrate will be exposed to the air and the substrate will be at risk of contamination.

[0041] To this end, the present invention discloses a space-type atomic layer deposition device 1, such as Figures 1 to 6 As shown, the space-type atomic layer deposition device 1 includes: A reaction chamber, the reaction chamber comprises a first side wall and a second side wall, a carrier inlet 10a is arranged on the first side wall, and a carrier outlet 10b is arranged on the second side wall, a carrier carrying a substrate can pass through the carrier inlet 10a to enter the reaction chamber, and can pass through the carrier outlet 10b to leave the reaction chamber; A spray module 3, the spray module 3 comprises a gas outlet surface, a plurality of gas outlet holes are formed on the gas outlet surface, the spray module 3 is arranged at the bottom of the reaction chamber, and the gas outlet surface faces the top of the reaction chamber; The carrier transport device 2 is used to drive the carrier to translate in the reaction chamber so that the surface to be deposited on the substrate is opposite to the gas outlet surface.

[0042] The spatial atomic layer deposition equipment 1 of the present application has the characteristics of small particle pollution, simple operation and high production efficiency, and the deposited film layer has higher quality. The spray module 3 is arranged at the bottom of the reaction chamber, so that the gas outlet surface of the spray module 3 sprays the reaction gas upward through the air hole. During the transmission process of the carrier carrying the substrate, the spray gas is sprayed on the lower surface of the substrate in a relatively scanning manner to deposit and form a film layer, thereby realizing a bottom-up atomic layer coating process. While the deposition quality is higher, it can also reduce the pollution of the film layer by particles, polymers, etc. in the cavity, and the upward deposition coating can adapt to the operation mode of other coating equipment in the existing production line, and can be integrated for coating, reduce the number of cleaning times, reduce the frequency of breaking the air, and do not require additional film flipping processing, which greatly improves production efficiency and ease of operation and reduces labor costs.

[0043] The atomic layer deposition of the present application is a groundbreaking bottom-up coating method (hereinafter referred to as bottom coating). Due to various issues such as the complex structure and stability of the equipment, atomic layer deposition from bottom to top has never appeared in the prior art. This is a special thin film deposition technology. Compared with the traditional top-down coating method (hereinafter referred to as top coating), the thickness of each layer of the bottom coating can be very accurately controlled during the spray scanning deposition process. Specifically, the sprayed gas is affected by its own gravity in addition to the spray pressure. Since the gas of the space-type atomic layer deposition is a continuous spray, this This will cause some particles or non-ideal polymerization products to be generated in the spraying. These products will fall onto the upper surface of the substrate during the upper coating, and a small amount will be sucked away by the exhaust system. These products will hinder gas deposition on the substrate surface, reducing the film thickness here, and on the other hand, will form film defects, which will reduce the film quality. When the particles and polymers generated during the lower coating are sprayed upward, some of them fall to the bottom of the cavity due to gravity and are sucked away by the exhaust gas. Even if the other part reaches the surface, it cannot be stably combined and will be quickly sucked away by the exhaust gas, which further improves the uniformity of the film thickness and the deposition quality.

[0044] On the other hand, in atomic layer deposition, each reactant reacts with the surface in a self-limiting manner: the reactant atoms can only react with a limited number of reaction sites on the substrate surface to form a thin film with atomic thickness. Although the spatial movement mode in the upper coating has an isolation gas curtain to blow away the remaining reactants of precursor A, even if part of A is blown away, if A in the air cannot be discharged or pumped away in time, or the relative movement speed of the isolation gas curtain and the carrier is too fast, a certain amount of the remaining precursor A reactant will still fall onto the substrate surface. This makes it possible for this part of the remaining reactant to affect the substrate's combination reaction with B at this position during the reaction of precursor B with the surface, thereby causing film differences. This problem will be greatly reduced in the lower coating because when the isolation gas blows away the remaining reactants of A in the lower coating, even if there are remaining reactants that are not discharged in time and exist in the air, they will not fall further onto the substrate surface, thereby not affecting the further combination reaction of B, thereby improving the uniformity of the film.

[0045] In addition, since the spray gas will quickly fall to the bottom of the cavity and be pumped away after being sprayed upward, the residence time of the polymer in the reaction cavity of the lower coating is shorter than that of the upper coating. The polymer in the upper coating is easy to adhere to the cavity wall and cavity cover, which causes the equipment to need to open the cavity for cleaning frequently, increasing the maintenance frequency and labor costs. The lower coating can reduce the adhesion problem of the polymer, thereby shortening the maintenance cycle and improving production efficiency.

[0046] The spray module 3 of the present application is not simply a random replacement of the spray module 3, but also involves the installation and connection of the spray module 3 with the chamber, and other components also need to adjust the structure and position accordingly. Specifically, in the traditional upper coating process, the gas is sprayed from top to bottom, and the exhaust pipe and the exhaust port are generally arranged on the side wall of the chamber or the bottom of the chamber, which makes the exhaust pipe pump less gas for the reaction gas sprayed from above, which will cause the number of gas molecules in the chamber to increase. On the one hand, it will increase the lateral diffusion length of different precursor gases, causing the mixed gas to be unable to form a self-limiting single precursor adsorption and atomic deposition reaction (more likely to form chemical reaction deposition). On the other hand, more reaction gas remains and cannot be pumped away in the cavity, increasing the cavity pressure. The increase in cavity pressure will further make it difficult to decompose and dissociate the precursor gas, reduce the reaction efficiency, and the residual gases react and polymerize, further increasing the possibility of polymer contamination and adhesion to the cavity wall in the cavity.

[0047] However, the above problems can be solved in the lower coating of the present invention. This is because during the lower coating process, the gas is sprayed from bottom to top, and the exhaust pipe and exhaust port are more likely to extract the gas ejected from below, and the amount of air pumped will be relatively larger than that of the upper coating. Therefore, the number of gas molecules in the chamber is smaller, which helps to reduce the lateral diffusion length of the precursor, reduce the possibility of mixed gas between different gas sources, and greatly improve the efficiency of the self-limiting atomic layer deposition reaction. In addition, the increased amount of air pumping reduces the cavity pressure, which can reduce gas phase reactions and ensure that deposition mainly occurs on the substrate surface. This makes the film thickness more uniform, and low pressure is also conducive to the desorption of by-product molecules from the substrate surface, making room for more precursor molecules. This is crucial to maintaining a continuous and efficient deposition process. Preferably, the cavity pressure is in the range of 1mbar to 5mbar during the lower coating operation of the present invention, and the cavity pressure is greater during the transmission upper coating operation, generally above 5mbar.

[0048] Figure 7 The gas distribution diagram is obtained by simulating the gas fluid of the outlet of the spray module of the present application when spraying by using ANSYS Fluent simulation software. The horizontal axis represents the positions of different precursor gas outlet holes, and the vertical axis represents the outlet pressure distribution of the first precursor gas hole and the second precursor gas hole. The first precursor gas is tetrakis(dimethylamino)tin, and the second precursor gas is H2O. Figure 7 It can be seen that after the precursor gas is ejected from the outlet, the gas will diffuse in a "trumpet-shaped" manner, and the isolation gas pores will isolate the diffusion between adjacent precursor gases. However, as the distance between the carrier and the spray module increases, the film-forming gap increases, and the isolation effect of the isolation gas pores will weaken, resulting in signs of mixing between the precursors. It is crucial to select a suitable spray spacing based on the diffusion characteristics of different precursors. The spray module of the present application is not simply swapped up and down. If the position is simply changed from the upper side to the lower side, but the spray spacing remains unchanged (the spacing between the spray module and the carrier), the gas flow field between the lower spray module and the carrier will change, which cannot form an effective atomic layer deposition reaction. When the spacing is too large, the isolation function of the isolation gas is insufficient, and a reaction accompanied by CVD occurs, rather than only a self-limiting atomic layer deposition reaction. As the spacing between the carrier and the nozzle decreases, the sealing effect between the precursors will improve, but a spacing less than 1mm is difficult to achieve in terms of processing difficulty. In order to further improve the reaction efficiency during atomic layer deposition, the interval between the spray module and the carrier is set in the range of 2 mm to 10 mm in the atomic layer deposition device of the present application. The following Table 1 shows the simulation data of the interval between the carrier and the spray module in the lower film atomic layer deposition device of the present application. The simulation is performed using ANSYS Fluent simulation software. TDMASn indicates that the first precursor gas source is tetrakis(dimethylamino)tin, H2O indicates that the second precursor gas source is water, and the distribution length (D) indicates the length of the lateral diffusion of the corresponding precursor gas source on the lower surface of the substrate when spraying. The self-limiting property (δ) is calculated as follows: δ=(1-((D-d1) / d1))*100% Among them, δ is self-limiting, D is distribution length, d1 is the spacing between adjacent different precursor outlet holes, and the self-limiting in Table 1 is calculated when the d1 spacing is set to 40mm. It should be noted that after the precursor gas is ejected from the outlet hole, the gas will diffuse in a "bell-shaped" manner. The distribution length refers to the lateral diffusion length of a single precursor gas when it is sprayed on the lower surface of the substrate. Generally, the larger the distribution length, the larger the precursor "bell-shaped" diffusion distance. If the distribution length is greater than the spacing between the outlet holes, it is easier for adjacent precursor gases to diffuse and cross-mix, which makes the isolation effect not good, so that the atomic layer cannot undergo a pure single reaction in each cycle; and the smaller the distribution length, the smaller the precursor diffusion distance, the smaller the "bell-shaped" angle of the spray gas, and the more inclined to a nearly vertical spray shape, so that adjacent precursors do not interfere with each other and are not easy to mix, so that atomic layer deposition is more likely to undergo a single reaction, and the atomic layer deposition effect is better. Self-limitation is calculated based on the distribution length and the pore spacing, which represents the degree to which a single reaction can occur in atomic layer deposition based on the distribution length obtained by simulation when the pore spacing is not fixed. The greater the self-limitation, the smaller the ratio of the distribution length to the pore spacing, and the more difficult it is for adjacent precursor gases to mix; the smaller the self-limitation, the greater the ratio of the distribution length to the pore spacing, and the easier it is for adjacent precursor gases to mix. Table 1

[0049] According to Table 1, when the spray spacing is 2 mm, the distribution length of the first precursor gas, i.e., tetrakis(dimethylamino)tin, is 53.67 mm, and the distribution length of the second precursor gas (H2O) is 39.98 mm. If the interval between the outlet holes of the two precursor gases is set to 40 mm, the self-limiting properties are calculated to be 65.82% and 100%, respectively. This shows that at a spacing of 2 mm, a more self-limiting atomic layer deposition effect (rather than ordinary CVD reaction) can be obtained. When the spray spacing is 10 mm, the distribution length of tetrakis(dimethylamino)tin is 70.21 mm, and the distribution length of the second precursor gas is 51.47 mm. The self-limiting properties are calculated to be 24.47% and 71.32%, respectively. Tetrakis(dimethylamino)tin is more likely to diffuse laterally, and its corresponding self-limiting property is reduced. There is mixed gas, the atomic layer deposition effect is reduced, and the chemical reaction deposition effect is increased. When the spacing is 11 mm, the distribution lengths of the first precursor gas and the second precursor gas exceed the spacing of 40 mm between adjacent gas outlets, the self-limitation is 0, the isolation gas loses its isolation function, and the cavity is completely transformed into a chemical vapor deposition reaction.

[0050] Different from the traditional spray spacing and gas spacing of coating, the present application adjusts the spacing between the air outlets on the above-mentioned spray spacing of 2mm-10mm, and adjusts the spacing between the air outlets of adjacent different precursors of the spray module to between 16mm and 80mm. The following Table 2 is the simulation data of the air outlet spacing of the spray module in the lower film atomic layer deposition equipment of the present application, wherein the digital item after the "-" in the first column of Table 2 represents half of the spacing between the precursor gas hole corresponding to the previous item and the adjacent different precursor gas holes, for example, "TDMASn-10mm" means that the spacing between the tetrakis(dimethylamino)tin precursor gas hole and the adjacent H2O precursor gas hole is 20mm, and for another example, "H2O-20mm" means that the spacing between the H2O precursor gas hole and the tetrakis(dimethylamino)tin precursor gas hole is 40mm.

[0051] Table 2

[0052] As can be seen from Table 2, the spacing between the adjacent outlet holes of the spray module determines the diffusion distance of the precursor. When the spacing is reduced, that is, the spacing between the outlet holes of adjacent different precursors is less than 16mm, the isolation gas cannot form an effective isolation, and the precursors will merge with each other, that is, the distribution length becomes longer and longer than the spacing between the outlet holes, and the self-limitation decreases to 0. At this time, the cavity is completely transformed into a chemical vapor deposition reaction. When the spacing between the outlet holes of adjacent different precursors is too large, although its self-limitation can be significantly improved, it will waste cavity space and affect production efficiency.

[0053] The present application does not impose any special limitation on the spacing of the isolation gas holes. Under the scheme of the spray module for lower coating, the precursor gas generally does not easily diffuse laterally. Preferably, the isolation gas holes are arranged near the precursor holes with a larger distribution length to effectively isolate their distribution. In some embodiments, the spacing between the isolation gas holes and the first precursor gas holes is between 10 mm and 30 mm.

[0054] As an optional implementation, the first side wall is arranged opposite to the second side wall, so that the carrier inlet 10a and the carrier outlet 10b are opposite to each other, which facilitates the linear reciprocating transmission of the carrier in the cavity.

[0055] The spatial atomic layer deposition equipment of the present application also includes a gas supply system 6, which includes a gas source and a spray module 3. The gas source is used to supply gas to the spray module. The spray module includes a gas outlet, which includes a plurality of first precursor gas holes 3a, a plurality of second precursor gas holes 3b, and a plurality of isolation gas holes 3c. The first precursor gas holes and the second precursor gas holes are alternately arranged along the length direction of the reaction chamber, and an isolator hole is provided between adjacent first precursor gas holes and second precursor gas holes so that the first precursor gas and the second precursor gas are isolated by the isolation gas. The spray module of the present application also includes an air intake module 34, and the gas source supplies gas to each air outlet through the air intake module.

[0056] The reaction chamber of the present application also includes a third side wall and a fourth side wall, the third side wall is arranged opposite to the fourth side wall, the carrier transmission device 2 includes an active transmission device 2a and a driven transmission device 2b, a plurality of first transmission holes 1c are arranged on the third side wall along the transmission direction, a plurality of second transmission holes are arranged on the fourth side wall along the transmission direction, the active transmission device 2a is arranged on the third side wall through the first transmission hole 1c, and the driven transmission device 2b is arranged on the fourth side wall through the second transmission hole, the active transmission device 2a and the driven transmission device 2b are used to carry and drive the carrier to translate in the reaction chamber from both sides of the carrier, and the plurality of first transmission holes 1c correspond to the plurality of second transmission holes one by one. The present application sets the carrier transmission device 2 at the side wall position not at the carrier entrance and exit, so that the third side wall and the fourth side wall can provide more transmission device installation space, and the carrier transmission device 2 is arranged on both sides of the carrier along the transmission direction, the load bearing force is more uniform and balanced, so that the carrier transmission is more stable, and when the spray module is arranged at the bottom, the transmission speed affects the residence time of the sample in the precursor concentration range and the deposition efficiency. The transmission speed of the carrier or substrate is positively correlated with the concentration of the precursor. When the carrier gas flow rate is increased, the speed range will increase accordingly, and the maximum movement speed at a stable growth rate will increase, but the precursor consumption will increase. Therefore, a reasonable process combination has a very important impact on improving production efficiency and reducing consumption. The following Table 3 is the gas distribution length, self-limitation and substrate film thickness data corresponding to different transmission speeds in the lower film atomic layer deposition equipment of this application. The self-limitation in Table 3 is calculated when the d1 spacing is set to 40mm, and the film thickness is obtained by ellipsometer testing.

[0057] Table 3

[0058] It can be seen from Table 3 that if the transmission speed exceeds 40m / min, the carrier will be transmitted too fast, so that the reaction gas will not have time to chemically combine on the substrate surface, and it cannot grow stably, and the film thickness will be significantly reduced, thereby reducing the coating efficiency; if the transmission speed is lower than 2m / min, the deposition efficiency of spatial atomic layer deposition will be reduced, and the excess reaction gas will be wasted and discharged and cannot be effectively utilized. When the transmission speed changes, the distribution length and self-limitation do not change significantly, and the film thickness changes significantly. When the transmission speed is 10 m / min, the film thickness in one transmission cycle is 7.222nm, and when the transmission speed increases to 40 m / min, the film thickness in one transmission cycle decreases to 3.5228nm. Preferably, the transmission speed is between 2m / min and 40m / min, the substrate deposition film thickness is appropriate, and the deposition efficiency is more ideal.

[0059] In order to ensure the stability of the carrier plate by making both sides of the carrier plate drive at the same speed, as an optional implementation, the present application connects the active transmission device 2a with the motor 2c through the electrode drive, and the active transmission device 2a transmits the driven transmission device 2b through the transmission rod 2d to achieve synchronous transmission. Alternatively, both sides can adopt independent transmission mode to make the speeds match and be consistent.

[0060] In order to further improve the transmission effect, increase the synchronous transmission performance, and ensure the stability of the transmission speed at the set time, preferably, the active transmission device 2a and the driven transmission device 2b both include multiple transmission bodies 21, multiple synchronous belts 22 and multiple auxiliary transmission parts 23, and the multiple transmission bodies 21 are arranged at intervals along the transmission direction, and auxiliary transmission parts 23 are arranged between adjacent transmission bodies 21. Any adjacent transmission bodies 21 and the auxiliary transmission parts 23 therebetween are connected by a synchronous belt 22 sleeve, so that the multiple transmission bodies 21 can be transmitted synchronously, wherein the auxiliary transmission parts 23 have a tensioning effect, and can adjust the tension of the synchronous belt 22 and the transmission body 21 to achieve the best synchronization effect.

[0061] It can be understood that in order to ensure synchronous transmission on both sides, the driven transmission device 2b and the active transmission device 2a have the same structure, that is, the driven transmission device 2b also includes multiple transmission bodies 21, synchronous belts 22 and auxiliary transmission parts 23, and the positions of the driven transmission devices 2b correspond one-to-one to the active transmission devices 2a.

[0062] The present application does not specifically limit how the carrier transmission device 2 carries and transmits the carrier. For example, it can be in the form of a transmission belt or a transmission roller. As an optional implementation, the transmission body 21 is inserted into the first transmission hole 1c or the second transmission hole to form a transmission shaft 213. Multiple transmission shafts 213 can rotate in the same direction to carry and transmit the carrier.

[0063] As an optional implementation, the transmission body 21 of the present application includes the above-mentioned transmission shaft 213, and also includes a synchronous wheel 210 and a sealed magnetic fluid 212, wherein the synchronous wheel 210 is used to configure the connection synchronous belt 22, so that adjacent transmission bodies 21 can achieve transmission speed synchronization through the synchronous wheel 210 and the synchronous belt 22, and the synchronous wheel 210 can also drive the transmission shaft 213 to rotate synchronously, and the sealed magnetic fluid 212 is used to seal the transmission hole, and other sealing structures, such as mechanical seals (elastic sealing rings, etc.) can also be used.

[0064] The present application does not specifically limit how the transmission shaft 213 carries and transports the carrier. The carrier can be simply mounted on the transmission shaft 213, and the carrier can be driven by friction through the rotation of multiple transmission shafts 213. The transmission shaft 213 can also be connected to a conveyor belt, and the carrier is placed on the conveyor belt to achieve transmission. As an optional implementation, the transmission shaft 213 includes an extension portion 213a, a carrier contact portion 213c, and a limiting portion 213b. The extension portion 213a, the carrier contact portion 213c, and the limiting portion 213b are arranged and connected along the axial direction of the transmission shaft 213. The limiting portion 213b is arranged between the extension portion 213a and the carrier contact portion 213c. The carrier contact portion 213c is used to carry and transmit the carrier. The outer diameter of the limiting portion 213b is larger than the outer diameter of the carrier contact portion 213c, so that the limiting portion 213b limits the carrier in the width direction.

[0065] Since the spray module 3 of the present application is arranged below the carrier plate for lower coating, in order to make the spray module 3 close enough to the carrier plate for spraying and at the same time not to affect the transmission of the carrier plate by the transmission shaft 213 when the spray module 3 is installed, the spray module 3 is provided with multiple installation notches 33 at the edge close to the third side wall and the fourth side wall. The multiple installation notches 33 are arranged at intervals along the transmission direction. The multiple installation notches 33 correspond to the multiple transmission shafts 213. The shape of the installation notches 33 matches the transmission shaft 213, so that there is an interval between the spray module 3 and the adjacent multiple transmission shafts 213. This makes the transmission shaft 213 not touch the spray module 3 when rotating, and the interval position can also make the excess reactant gas enter the bottom of the chamber from the interval during deposition and be drawn away.

[0066] In order to reduce the adhesion of the polymer to the cavity wall, the atomic layer deposition equipment also includes a baffle 11 relatively arranged along the width direction of the reaction chamber, the baffle 11 is arranged between the spray module 3 and the side wall of the reaction chamber, the baffle 11 and the side wall enclose the spray module 3, the baffle 11 can absorb the adhesion of excess reactants, and the baffle 11 is arranged between the spray module 3 and the side wall, so that the excess reactants preferentially adhere to the side wall of the baffle 11, so that when the cavity is opened for cleaning and maintenance, only the baffle 11 needs to be cleaned without disassembling and cleaning the cavity wall.

[0067] In order to prevent the baffle 11 from interfering with the structure of the rotating shaft, the baffle 11 is preferably located on the lower side of the transmission shaft 213, and the baffle 11 includes a plurality of grooves 111 arranged along the length direction, and the plurality of grooves 111 correspond one-to-one to the plurality of transmission shafts 213. The shape of the grooves 111 matches the transmission shaft 213, so that in the axial direction of the transmission shaft 213, the grooves 111 can accommodate part of the transmission shaft 213.

[0068] The baffle 11 includes a plurality of reinforcing structures 112, which are arranged at intervals along the transmission direction. The reinforcing structures 112 include a connecting portion and a fixing portion. The connecting portion is arranged on the side wall of the baffle 11, and the fixing portion supports and fixes the baffle 11 through the connecting portion. The baffle 11 is fixedly connected to the bottom surface 1a of the reaction chamber through the fixing portion.

[0069] The present application does not make any special restrictions on how the spray module 3 is arranged at the bottom of the reaction chamber. It only needs to be arranged at the bottom to spray toward the top. For example, it can be simply placed on the bottom surface 1a of the chamber. For another example, it can also be fixed to the bottom of the chamber by bolts, buckles, etc., which can be detachably installed. Considering that the spray module 3 needs to be regularly cleaned, maintained, and replaced, it is necessary to have a certain disassembly structure. At the same time, the atomic layer deposition equipment is stationary during operation and will not be disturbed by the transmission structure. Therefore, as a preference, the spray module 3 also includes a plurality of support limiters, which are arranged between the spray module 3 and the bottom of the reaction chamber to support the spray module 3 and allow a set interval to exist between the spray module 3 and the carrier. Preferably, the set interval is between 2 mm and 10 mm.

[0070] In some embodiments, because the spray module 3 will be affected by the temperature in the cavity and the deposition temperature is generally high, in order to prevent the spray module 3 from undergoing thermal deformation and causing a change in position relative to the cavity, the support limit member includes a plurality of limit rods 31, and the spray module 3 includes a plurality of first limit holes 35. The first end of the limit rod 31 is fixedly connected to the bottom of the reaction chamber, and the second end of the limit rod 31 is movably connected to the spray module 3 through the first limit hole 35, so that the first limit hole 35 limits the spray module 3 to prevent the spray module 3 from lateral movement, while providing a portion of thermal deformation space to avoid thermal stress and increase the service life of the spray module 3.

[0071] In some embodiments, the support and limit member further includes a plurality of adjustment mechanisms 32, the two ends of which are fixedly connected to the bottom of the reaction chamber and the spray module 3 respectively, and the adjustment structure is used to adjust the distance between the spray module 3 and the carrier.

[0072] In some embodiments, the spatial atomic layer deposition device 1 also includes a carrier, which is carried by the carrier transmission device 2. A plurality of receiving holes 41 are formed on the carrier, and the plurality of receiving holes 41 are arranged in a plurality of rows and columns along the transmission direction. The receiving holes 41 form a step structure along the thickness direction of the carrier, and the step structure has a substrate bearing surface. The carrier carries the substrate through the substrate bearing surface. Since the carrier needs to carry the substrate, it needs to have a certain strength, but the deposition requires the carrier to be thin enough. Preferably, a reinforcing rib 42 is provided in the middle of the carrier.

[0073] Another innovation of the present application is that the spatial atomic layer deposition device 1 further includes an upper chamber cover 8 and a heating module 5. The upper chamber cover 8 is used to close the reaction chamber from the top of the reaction chamber, and the heating module 5 is arranged on the upper chamber cover 8. In the prior art, the heating module 5 is arranged at the bottom of the chamber, and is heated from bottom to top (referred to as bottom heating). The present application is a top heating mode. The present invention installs the heating module 5 on the chamber cover to avoid interference with the transmission system, and makes the heating module 5 as large as possible, thereby increasing the coverage of the substrate and reducing edge heat dissipation.

[0074] In order to increase the heat radiation area while reducing the thermal deformation effect caused by heating, preferably, the heating module 5 includes multiple heating elements 51 and multiple heating plates, and the multiple heating elements 51 are fixedly connected to the upper chamber cover 8 and the heating plates. The heating elements 51 are used to transfer electrical energy from the outside to the reaction chamber to heat the heating plates, and the multiple heating plates are arranged along the transmission direction. Preferably, the spacing between the heating plate and the carrier is between 5mm and 9mm to achieve the best heating effect.

[0075] In order to make the heating temperature more uniform at each position of the chamber, preferably, the plurality of heating plates include a middle heating plate and an edge heating plate, and the size of the middle heating plate along the transmission direction is larger than the size of the edge heating plate along the transmission direction. Preferably, the length of the middle heating plate is between 1500mm and 2500mm, the length of the edge heating plate is between 100mm and 500mm, and the sizes of the middle heating plate and the edge heating plate along the width direction of the reaction chamber are both between 1000mm and 1500mm.

[0076] The heating plate is generally a metal plate with good thermal conductivity. It is easy to be thermally deformed when the temperature rises, and is more susceptible to thermal deformation at the fixed connection with the chamber cover. In order to reduce the impact of thermal deformation of the heating plate, as a preference, a plurality of limiting fixing holes 53 are opened on the heating plates, and the heating module also includes fasteners, which pass through the limiting fixing holes and are fixedly connected to the upper chamber cover, so that the heating plate is fixedly connected to the upper chamber cover, and a plurality of limiting fixing holes 53 are arranged along the edge of the heating plate, and the plurality of limiting fixing holes 53 have limiting spaces along the transmission direction and / or the width direction of the reaction chamber.

[0077] The spatial atomic layer deposition equipment of the present application also includes a heat insulation board 52, which is arranged between the heating plate and the upper chamber cover 8, and the heating plate is also surrounded by the heat insulation board 52 on all sides, reducing the excess heat consumption, thereby ensuring the thermal uniformity of the substrate. Preferably, the heat insulation board 52 has a heat insulation board notch 52a on the four side walls on the outside, and the heat insulation board notch 52a corresponds to the position of the transmission shaft 213, so that when the upper chamber cover 8 is closed by the chamber cover opening and closing mechanism 9, the heat insulation board notch 52a just passes the transmission shaft 213, so that the heat insulation board 52 will not hinder the transmission of the transmission shaft 213 to the carrier.

[0078] The space-type atomic layer deposition equipment also includes a vacuum system 7, which includes a plurality of vacuum pipes 7a. The vacuum pipes 7a are arranged at the lower side of the spray module 3 in the reaction chamber. The plurality of vacuum pipes 7a are arranged at intervals along the transmission direction. The vacuum pipes 7a include a plurality of exhaust ports 7a1, so that the gas exhausted from the spray module 3 is discharged from the lower side through the exhaust ports 7a1.

[0079] The spatial atomic layer deposition equipment 1 also includes a valve system 10, which is respectively connected to the carrier inlet 10a and the carrier outlet 10b. The carrier inlet 10a and the carrier outlet 10b are also provided with a plurality of fixed installation countersunk holes for fixed connection with the valve system 10.

[0080] The present application does not make any special limitation on the film layer deposited by the space-type atomic layer deposition equipment 1. For example, it can be an electron transport layer of perovskite, such as SnO2, Al2O3, TiO2, MoO3, V2O5 and other metal oxides, and the corresponding substrate is a silicon wafer. The substrate can also be ordinary glass or ITO substrate.

[0081] In some embodiments, the perovskite solar cell includes a bottom crystalline silicon cell, an ITO composite layer, a hole transport layer, a perovskite light absorbing layer, an electron transport layer, an ITO transparent conductive layer and a top metal electrode stacked in sequence. In the process of preparing the electron transport layer, the related technology often uses a stacked structure of C60 and SnO2 as the electron transport layer, and C60 is mainly prepared by evaporation, and SnO2 is mainly prepared by atomic layer deposition. The current mainstream of evaporation is to set the evaporation source at the bottom, heat the evaporation source, so that the internal material evaporates upward and is deposited on the lower surface of the substrate. It is a bottom coating method. Atomic layer deposition is usually a carrier with a substrate into the cavity, and a spray module sprays downward to form a film on the upper surface of the substrate. Therefore, the types and preparation methods of these two film layers are different. After the substrate is evaporated with C60, it is necessary to turn the substrate over for atomic layer deposition, which will cause particle contamination and inconvenience of manual operation. In addition, due to the difference in upper and lower coatings, these two coating devices cannot be integrated together to achieve continuous coating. Therefore, In some embodiments, the present application adopts an atomic layer deposition method for lower coating. Specifically, after the perovskite light absorbing layer is prepared, the substrate is first transferred to the transfer chamber. The transfer chamber, the evaporation chamber, and the atomic layer reaction chamber are evacuated together. Then the substrate is transferred into the evaporation chamber through a carrier to start evaporation of C60 on the lower surface. After the evaporation is completed, it is transferred out of the evaporation chamber. In this step, no additional breaking of the air is required, and no additional flipping of the substrate is required. The substrate transferred out of the evaporation chamber can be directly transferred into the atomic layer reaction chamber to complete the SnO2 coating on the lower surface. After the deposition is completed, the substrate is transferred to the transfer chamber. After the transfer chamber is broken, a perovskite substrate with continuous deposition of C60 and SnO2 is obtained. This deposition method reduces the number of breaking of the air, reduces the breaking time, and does not require substrate flipping. Continuous vacuum coating can be achieved, thereby improving production efficiency.

[0082] It is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that the present invention includes but is not limited to the contents described in the drawings and the above specific embodiments. Any modification that does not deviate from the functional and structural principles of the present invention will be included in the scope of the claims.

Claims

1. A spatial atomic layer deposition device, characterized in that: The spatial atomic layer deposition equipment comprises: A reaction chamber, the reaction chamber comprising a first side wall and a second side wall, the first side wall being provided with a carrier inlet (10a), the second side wall being provided with a carrier outlet (10b), the carrier carrying a substrate being able to pass through the carrier inlet to enter the reaction chamber, and being able to pass through the carrier outlet to leave the reaction chamber; A spray module (3), the spray module comprising a gas outlet surface, a plurality of gas outlet holes being formed on the gas outlet surface, the spray module being arranged at the bottom of the reaction chamber, the gas outlet surface facing the top of the reaction chamber; A carrier plate transport device is used to drive the carrier plate (4) to translate in the reaction chamber so that the surface to be deposited on the substrate is opposite to the gas outlet surface.

2. The spatial atomic layer deposition device according to claim 1, characterized in that: The first side wall is arranged opposite to the second side wall, and the reaction chamber also includes a third side wall and a fourth side wall, the third side wall is arranged opposite to the fourth side wall, a plurality of first transmission holes are arranged on the third side wall along the transmission direction, and a plurality of second transmission holes are arranged on the fourth side wall along the transmission direction, the carrier transmission device includes an active transmission device (2a) and a passive transmission device (2b), the active transmission device and the passive transmission device are used to carry and drive the carrier from both sides of the carrier to translate in the reaction chamber, the active transmission device is arranged on the third side wall through the first transmission hole, and the passive transmission device is arranged on the fourth side wall through the second transmission hole, and the plurality of first transmission holes correspond to the plurality of second transmission holes one by one.

3. The spatial atomic layer deposition device according to claim 2, characterized in that: The spatial atomic layer deposition equipment also includes a transmission rod, the two ends of which are respectively connected to the active transmission device and the driven transmission device, and the active transmission device transmits the driven transmission device through the transmission rod to achieve synchronous transmission.

4. The spatial atomic layer deposition device according to claim 2, characterized in that: The active transmission device (2a) comprises a plurality of transmission bodies (21), a plurality of synchronous belts (22) and a plurality of auxiliary transmission parts (23), wherein the plurality of transmission bodies are arranged at intervals along the transmission direction, the auxiliary transmission parts are arranged between adjacent transmission bodies, and any adjacent transmission bodies are connected to the auxiliary transmission parts therebetween via the synchronous belt sleeve, so that the plurality of transmission bodies can be transmitted synchronously. The transmission body is inserted into the first transmission hole or the second transmission hole to form a transmission shaft (213). The plurality of transmission shafts can rotate in the same direction to carry and transmit the carrier.

5. The spatial atomic layer deposition device according to claim 4, characterized in that: The transmission shaft (213) comprises an extension portion (213a), a carrier contact portion (213c) and a limiting portion (213b); the extension portion, the carrier contact portion and the limiting portion are arranged and connected along the axial direction of the transmission shaft; the limiting portion is arranged between the extension portion and the carrier contact portion; the carrier contact portion is used to carry and transmit the carrier; the outer diameter of the limiting portion is greater than the outer diameter of the carrier contact portion, so that the limiting portion limits the carrier in the width direction.

6. The spatial atomic layer deposition device according to claim 4, characterized in that: The spray module is provided with a plurality of mounting notches at the edges close to the third side wall and the fourth side wall. The plurality of mounting notches are arranged at intervals along the transmission direction. The plurality of mounting notches correspond one-to-one to the plurality of transmission shafts. The shape of the mounting notches matches the transmission shaft, so that there is a gap between the spray module and the plurality of adjacent transmission shafts.

7. The spatial atomic layer deposition device according to claim 4, characterized in that: The atomic layer deposition device further comprises baffles (11) arranged opposite to each other along the width direction of the reaction chamber, wherein the baffles are arranged between the spray module and the side wall of the reaction chamber, and the baffles and the side wall enclose the spray module. The baffle is located at the lower side of the transmission shaft, and comprises a plurality of grooves (111) arranged along the length direction, the plurality of grooves corresponding one-to-one to the plurality of transmission shafts, and the shape of the grooves matches the transmission shafts, so that in the axial direction of the transmission shaft, the grooves can accommodate part of the transmission shaft.

8. The spatial atomic layer deposition device according to claim 7, characterized in that: The baffle comprises a plurality of reinforcing structures (112), the plurality of reinforcing structures being arranged at intervals along the transmission direction, the reinforcing structures comprising a connecting portion and a fixing portion, the connecting portion being arranged on a side wall of the baffle, the fixing portion supporting and fixing the baffle via the connecting portion, and the baffle being fixedly connected to the bottom surface of the reaction chamber via the fixing portion.

9. The spatial atomic layer deposition device according to claim 1, characterized in that: The spray module further includes a plurality of support and stop members, which are disposed between the spray module and the bottom of the reaction chamber and are used to support the spray module and to ensure a set interval between the spray module and the carrier.

10. The spatial atomic layer deposition device according to claim 9, characterized in that: The support limiter comprises a plurality of limit rods (31) and a plurality of adjustment mechanisms (32); the spray module comprises a plurality of first limit holes, The first end of the limiting rod is fixedly connected to the bottom of the reaction chamber, and the second end of the limiting rod is movably connected to the spray module through the first limiting hole, so that the spray module is limited through the first limiting hole. Two ends of the adjustment mechanism are fixedly connected to the bottom of the reaction chamber and the spray module respectively, and the adjustment structure is used to adjust the distance between the spray module and the carrier.

11. The spatial atomic layer deposition device according to claim 9, characterized in that: The set interval is between 2 mm and 10 mm.

12. The spatial atomic layer deposition device according to claim 1, characterized in that: The spatial atomic layer deposition equipment also includes a carrier (4), which is carried by the carrier transmission device, and a plurality of receiving holes (41) are formed on the carrier, and the plurality of receiving holes are arranged in a plurality of rows and columns along the transmission direction, and the receiving holes form a step structure along the thickness direction of the carrier, and the step structure has a substrate carrying surface, and the carrier supports the substrate through the substrate carrying surface.

13. The spatial atomic layer deposition device according to claim 1, characterized in that: The spatial atomic layer deposition device further comprises an upper chamber cover (8) and a heating module (5), wherein the upper chamber cover is used to close the reaction chamber from the top of the reaction chamber, and the heating module (5) is arranged on the upper chamber cover.

14. The spatial atomic layer deposition device according to claim 13, characterized in that: The heating module includes multiple heating elements and multiple heating plates. The multiple heating elements are fixedly connected to the upper chamber cover and the heating plates. The heating elements are used to transfer electrical energy from the outside into the reaction chamber to heat the heating plates. The multiple heating plates are arranged along the transmission direction.

15. The spatial atomic layer deposition device according to claim 14, characterized in that: The plurality of heating plates include a middle heating plate and an edge heating plate, wherein a size of the middle heating plate along the transmission direction is greater than a size of the edge heating plate along the transmission direction.

16. The spatial atomic layer deposition device according to claim 14, characterized in that: Multiple limiting fixing holes are provided on the heating plates, and the heating module also includes a fastener, and the fastener passes through the limiting fixing holes and is fixedly connected to the upper cavity cover, so that the heating plate is fixedly connected to the upper cavity cover, and the multiple limiting fixing holes are arranged along the edge of the heating plate, and the multiple limiting fixing holes have limiting spaces along the transmission direction and / or the width direction of the reaction chamber.

17. The spatial atomic layer deposition device according to any one of claims 1 to 16, characterized in that: The spatial atomic layer deposition equipment also includes a vacuum system (7), the vacuum system includes a plurality of vacuum pipelines (7a), the vacuum pipelines are arranged at the lower side of the spray module in the reaction chamber, the plurality of vacuum pipelines are arranged at intervals along the transmission direction, and the vacuum pipelines include a plurality of exhaust ports, so that the gas exhausted from the spray module is discharged from the lower side through the exhaust ports.

18. The spatial atomic layer deposition device according to any one of claims 1 to 16, characterized in that: The spatial atomic layer deposition equipment also includes a valve system, which is respectively connected to the carrier inlet and the carrier outlet. The carrier inlet and the carrier outlet are also provided with a plurality of fixed installation countersunk holes, which are used to be fixedly connected to the valve system.

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