Low-energy-consumption microwave plasma chemical vapor deposition diamond generation equipment

Abstract

The invention relates to the technical field of plasma chemical vapor deposition, and discloses low-energy-consumption microwave plasma chemical vapor deposition diamond generation equipment which comprises a reaction part, the reaction part comprises a machine shell and a reaction cavity, the reaction cavity is formed in the inner side of the machine shell, and a waveguide part is fixedly installed on the outer side of the upper portion of the reaction cavity; the lower side of the reaction cavity is fixedly connected with the inner side wall of the machine shell through a connecting frame, a first heat exchange part is arranged on the inner side of the reaction cavity, one end of the first heat exchange part communicates with a circulating water control part, and the other end of the circulating water control part communicates with a preheating part. Through cooperation of the heat exchange part I, the circulating water control part, the preheating part, the heat exchange part II and the outer cooling mechanism, heat of the reaction cavity can be subjected to secondary heat exchange, the efficient heat dissipation effect is achieved, it is guaranteed that the temperature in the reaction cavity is stable, meanwhile, the heat obtained through heat exchange can preheat target gas, and the heat exchange efficiency is improved. And therefore, the radiated heat is effectively utilized.

Description

Technical Field

[0001] The invention relates to the technical field of plasma chemical vapor deposition, in particular to a low-energy microwave plasma chemical vapor deposition diamond production device. Background Art

[0002] The diamond formation process is to gasify the hair and then purify it. The resulting gas is converted into diamond through CVD technology. The hair is converted into a gas mixture through high-temperature gasification, including hydrogen (H2), methane (CH4), carbon dioxide (CO2), nitrogen (N2) and some volatile organic compounds (VOCs). In this stage, a high-temperature furnace or gasification furnace is used to remove water vapor and large particle impurities through a condensation tower and a coarse filter to ensure that the gas smoothly enters the next purification process. After the initial gas treatment stage, VOCs removal stage, nitrogen removal stage, carbon dioxide and methane separation stage, gas ratio and adjustment stage, the target gas is obtained. The target gas ratio is: hydrogen (H2): 70-90%, methane (CH4): 10-30%, carbon dioxide (CO2): trace (0-5%), and then the target gas is passed into the existing CVD device for diamond growth.

[0003] However, the existing microwave plasma chemical vapor deposition diamond production equipment sets a copper platform at the bottom of the reaction chamber to dissipate heat from the reaction chamber to ensure the temperature inside the reaction chamber is stable. The current cooling system may directly use a water cooler to take away the heat, which consumes a lot of energy. Moreover, the heat taken away has no other use and cannot be utilized. Therefore, the existing microwave plasma chemical vapor deposition diamond production equipment has the problem of high cooling energy consumption and ineffective use of heat during the diamond preparation process. Summary of the invention

[0004] The object of the present invention is to provide a low energy consumption microwave plasma chemical vapor deposition diamond growing device to solve the problems raised in the background technology.

[0005] To achieve the above-mentioned purpose, the present invention provides the following technical solution: a low-energy microwave plasma chemical vapor deposition diamond production device, comprising a reaction part, the reaction part comprising a casing and a reaction chamber, the reaction chamber is arranged on the inner side of the casing, a waveguide part is fixedly installed on the outer side of the upper part of the reaction chamber, the lower side of the reaction chamber is fixedly connected to the inner side wall of the casing through a connecting frame, a heat exchange part 1 is arranged on the inner side of the reaction chamber, one end of the heat exchange part 1 is connected to a circulating water control part, the other end of the circulating water control part is connected to a preheating part, the other end of the preheating part is connected to a heat exchange part 2, the heat exchange part 2 includes a secondary heat exchanger, and the other end of the heat exchange part 2 is connected to an external cooling mechanism; The heat exchange part 1 includes a copper platform and a primary heat exchanger. The inner side of the reaction chamber is provided with a copper platform, and the inner side of the copper platform is fixedly provided with a primary heat exchanger. The primary heat exchanger includes a protective shell, fins, a hot water exchange pipe 1, a water outlet pipe 1, and a water inlet pipe 1. The inner side of the copper platform is fixedly provided with a protective shell, and the inner side of the protective shell is fixedly connected with evenly distributed fins. The inner side of the fins is penetrated with an evenly distributed hot water exchange pipe 1, and the two ends of the hot water exchange pipe 1 are respectively connected with a water outlet pipe 1 and a water inlet pipe 1; a circular protrusion is provided on the fin, and a groove corresponding to the circular protrusion is provided on the inner side of the copper platform; The heat transferred by the copper platform can be subjected to secondary heat exchange through the primary heat exchanger and the secondary heat exchanger, and the heat exchange heat can preheat the target gas introduced into the reaction chamber.

[0006] Furthermore, the reaction chamber includes an antenna fixing seat, a coaxial waveguide, a quartz positioning ring, an air intake pipe, a shielded aluminum cylinder, a quartz cylinder, and a placement table. A shielded aluminum cylinder is provided on the inner side of the casing, a placement table is fixedly installed on the lower side of the shielded aluminum cylinder, the placement table is fixedly connected to the inner wall of the casing through a connecting frame, a quartz cylinder is provided on the upper side of the placement table and on the inner side of the shielded aluminum cylinder, an air intake pipe is fixedly connected to the upper side of the quartz cylinder, a quartz positioning ring is fixedly installed on the upper side of the shielded aluminum cylinder, a coaxial waveguide is fixedly connected to the upper side of the quartz positioning ring, an antenna fixing seat is fixedly connected to the upper outer side of the air intake pipe, a second temperature sensor is provided on the outer side of the coaxial waveguide, the second temperature sensor passes through the coaxial waveguide and the air intake pipe, and extends into the inner side of the air intake pipe.

[0007] The target gas is introduced into the quartz tube through the air inlet pipe, and then the microwave source is started, the microwave source generates microwaves, and the microwave energy is transmitted to the outside of the air inlet pipe through the waveguide, and then under the action of the microwave energy, the target gas excites plasma; Furthermore, the waveguide part includes a waveguide housing and a microwave source. The waveguide housing is fixedly connected to one side of the housing, the microwave source is fixedly installed on the inner side of the waveguide housing, the side of the microwave source close to the reaction chamber is connected to a waveguide tube, and the other end of the waveguide tube is fixedly installed on the outside of the intake pipe through an antenna fixing seat and a coaxial waveguide.

[0008] Furthermore, the preheating part includes a preheating outer shell, a preheating tube group, a fixing frame, a second water inlet pipe, and a second water outlet pipe. The outer side of the waveguide tube is fixedly connected to the preheating outer shell, and the side of the preheating outer shell away from the waveguide tube is fixedly connected to the heat exchange shell, the air inlet pipe runs through the heat exchange shell, the inner side of the preheating outer shell is fixedly connected to the fixing frame, and the inner side of the fixing frame is fixedly connected to a uniformly distributed preheating tube group, and the two ends of the preheating tube group are respectively connected to the second water inlet pipe and the second water outlet pipe, and the second water inlet pipe is connected to the first water outlet pipe.

[0009] Start water pump 1, and then drive the water flow in the secondary heat exchange circulation water circuit. The copper platform transfers the heat inside the reaction chamber to the fins, and the fins transfer the heat to the water inside the heat exchange water pipe 1. Then the water flow transfers the heat through the outlet pipe 1 to the inlet pipe 2. The inlet pipe 2 transfers the water flow to the preheating tube group. Since the preheating tube group is provided with multiple groups of pipes evenly distributed, the heat is efficiently transferred to the waveguide outside the preheating tube group and the air inlet pipe inside the heat exchange shell, thereby realizing the preheating of the target gas and providing a certain heat source for the microwave. The first-level heat exchange is realized; Furthermore, the circulating water control unit includes a water pump 1, a solenoid valve 1, a solenoid valve 2, and a branch pipe. The water pump 1 is fixedly installed on the inner side of the casing. The water inlet of the water pump 1 is connected to the water outlet pipe 2. The water outlet of the water pump 1 is connected to a long pipe 1, and the long pipe 1 is connected to a solenoid valve 1. The other end of the water inlet pipe 1 is connected to a long pipe 2, and the long pipe 2 is connected to a branch pipe, and the branch pipe is connected to a solenoid valve 2.

[0010] Since temperature sensor 2 can detect the temperature of the target gas while preheating the target gas, the external system adjusts the opening size of solenoid valve 1 and the opening and closing of solenoid valve 2 according to its temperature state. Since solenoid valve 2 is connected to an external water supply device, the opening and closing of solenoid valve 2 are controlled, and the branch pipe is connected to the external water supply device. The branch pipe controls whether water flows into the heat exchange circulation water circuit, thereby supplementing the water flow in the heat exchange circulation water circuit due to heat evaporation. At the same time, with the cooperation of adjusting the opening size of solenoid valve 1, the temperature of the water flow entering the hot water pipe 1 can be controlled, thereby strictly controlling the preheating temperature of the target gas.

[0011] Furthermore, the heat exchange part 2 includes a secondary heat exchanger, an inlet and outlet water structure, and a temperature sensor 1. The long pipe 1 is connected to the inlet and outlet water structure. The inlet and outlet water structure is connected to the secondary heat exchanger, and a temperature sensor 1 is arranged on the secondary heat exchanger.

[0012] Furthermore, the secondary heat exchanger includes a tube shell, a second hot water exchange tube, a shell-side cavity, a tube-side cavity, a tube sheet, and a baffle. The water inlet and outlet structure is connected to the tube shell. The inner side of the tube shell is provided with a second evenly distributed hot water exchange tube. The second hot water exchange tube is fixedly connected to the inner wall of the tube shell through an evenly distributed baffle. The inner ends of the tube shell are fixedly connected to the tube sheet, and the tube sheet separates the inner ends of the tube shell. Multiple groups of the inner sides of the second hot water exchange tubes and the space separated by the tube sheet constitute a tube-side cavity. The inner side of the tube shell is separated by a baffle to form a shell-side cavity.

[0013] Furthermore, the water inlet and outlet structure includes a shell-side water inlet, a tube-side water inlet, a shell-side water outlet, and a tube-side water outlet. One end of the tube shell is connected to the tube-side water inlet and the tube-side water outlet, and the middle part of the tube shell is connected to the shell-side water inlet and the shell-side water outlet. The long pipe 1 is connected to the tube-side water inlet, and the tube-side water outlet is connected to the long pipe 2.

[0014] Furthermore, the external cooling mechanism includes a cooling water inlet pipe, a variable frequency water pump group, a cooling tower, and a cooling water outlet pipe. The shell side water outlet is connected to the cooling water inlet pipe, and the other end of the cooling water inlet pipe is connected to the cooling tower. The cooling tower is connected to the water inlet of the variable frequency water pump group through a short pipe, and the water outlet of the variable frequency water pump group is connected to the cooling water outlet pipe, and the cooling water outlet pipe is connected to the shell side water inlet.

[0015] After the water flow inside the preheating tube group is preheated, it flows to the tube side water inlet through the second outlet pipe and the first long pipe, and then flows into the tube side cavity through the tube side water inlet. At the same time, the variable frequency water pump group is started, so that the variable frequency water pump group flows the cooling water in the cooling tower through the cooling outlet pipe to the shell side water inlet, and then flows into the shell side cavity. Since the shell side cavity and the tube side cavity intersect with each other, secondary heat exchange is realized, and the water flow in the tube side cavity is cooled again; Then the water in the tube cavity flows through the tube outlet, the long pipe 2, the water inlet pipe 1, and then flows back to the hot water exchange pipe 1 for circulating heat exchange; Furthermore, the hot water exchange pipe 1, the water outlet pipe 1, the water inlet pipe 2, the preheating pipe group, the water outlet pipe 2, the long pipe 1, the pipe side water inlet, the pipe side cavity, the pipe side water outlet, the long pipe 2, and the water inlet pipe 1 are connected in sequence to form a secondary heat exchange circulation water circuit, and the cooling water outlet pipe, the shell side water inlet, the shell side cavity, the shell side water outlet, and the cooling water inlet pipe are connected in sequence to form a cooling circulation water circuit.

[0016] The water flow in the shell side cavity flows back to the cooling tower through the shell side water outlet and the cooling water inlet pipe for circulation. As the water flow inside the shell side cavity flows, the temperature of the water flow can be detected by the temperature sensor. According to the temperature, the external system can freely adjust the rate at which the variable frequency water pump group drives the water circulation flow to achieve the water temperature for maintaining the secondary heat exchange and ensure the water heat dissipation effect.

[0017] Compared with the prior art, the present invention provides a low-energy microwave plasma chemical vapor deposition diamond production device, which has the following beneficial effects: 1. The low-energy microwave plasma chemical vapor deposition diamond production equipment can perform secondary heat exchange on the heat of the reaction chamber through the cooperation between the heat exchange part 1, the circulating water control part, the preheating part, the heat exchange part 2, and the external cooling mechanism, thereby achieving the effect of efficient heat dissipation and ensuring the temperature stability inside the reaction chamber. At the same time, the heat exchanged can be used to preheat the target gas, thereby effectively utilizing the heat dissipated, solving the problem that the current cooling system may directly use a water cooler to take away the heat, which consumes a lot of energy, and the heat taken away has no other use and cannot be utilized. Therefore, the existing microwave plasma chemical vapor deposition diamond production equipment has the problem of large cooling energy consumption and ineffective utilization of heat in the process of preparing diamonds.

[0018] 2. The low-energy microwave plasma chemical vapor deposition diamond production equipment can monitor the water temperature after the secondary heat exchange and the preheating temperature of the target gas in real time through the cooperation between the temperature sensor 1, the temperature sensor 2, the external cooling mechanism, and the circulating water control unit. At the same time, according to the real-time temperature conditions, the cooling capacity and preheating capacity of the cooling tower are adaptively adjusted to ensure the stability of the preheating temperature and the quality of the secondary heat exchange. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 It is a schematic diagram of the three-dimensional structure of the present invention; Figure 2 It is a schematic diagram of the three-dimensional structure of the waveguide part of the present invention; Figure 3 It is a schematic diagram of the three-dimensional structure of the circulating water control unit of the present invention; Figure 4 It is a schematic diagram of the exploded three-dimensional structure of the reaction chamber of the present invention; Figure 5 This is a schematic diagram of the three-dimensional structure of the reaction chamber of the present invention, which is decomposed from another angle; Figure 6 It is a schematic diagram of the three-dimensional structure of the preheating part of the present invention; Figure 7 It is a schematic diagram of the three-dimensional structure of the temperature sensor 2 of the present invention; Figure 8 It is a schematic diagram of the exploded three-dimensional structure of the primary heat exchanger of the present invention; Fig. 9 It is a schematic diagram of the three-dimensional structure of the primary heat exchanger of the present invention decomposed from another angle; Fig.10 It is a three-dimensional structural schematic diagram of the external cooling mechanism of the present invention; Fig.11 It is a schematic diagram of the three-dimensional structure of the heat exchange part 2 of the present invention.

[0020] In the figure: 1, reaction part; 11, casing; 12, reaction chamber; 121, antenna fixing seat; 122, coaxial waveguide; 123, quartz positioning ring; 124, air inlet pipe; 125, shielded aluminum cylinder; 126, quartz cylinder; 127, placement table; 2, waveguide part; 21, waveguide casing; 22, microwave source; 3, heat exchange part 1; 31, copper table; 32, primary heat exchanger; 321, protective shell; 322, fin; 323, hot water exchange pipe 1; 324, water outlet pipe 1; 325, water inlet pipe 1; 4, circulating water control part; 41, water pump 1; 42, solenoid valve 1; 43, solenoid valve 2; 44, branch pipe; 5, preheating part; 51, preheating Heat exchange shell; 52, preheating tube group; 53, fixing frame; 54, water inlet pipe 2; 55, water outlet pipe 2; 56, heat exchange shell; 6, heat exchange part 2; 61, secondary heat exchanger; 611, tube shell; 612, hot water exchange pipe 2; 613, shell side cavity; 614, tube side cavity; 615, tube sheet; 616, baffle; 62, water inlet and outlet structure; 621, shell side water inlet; 622, tube side water inlet; 623, shell side water outlet; 624, tube side water outlet; 63, temperature sensor 1; 7, external cooling mechanism; 71, cooling water inlet pipe; 72, variable frequency water pump group; 73, cooling tower; 74, cooling water outlet pipe; 8, temperature sensor 2. DETAILED DESCRIPTION

[0021] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0022] Example See also Figure 1-Figure 11 The low-energy microwave plasma chemical vapor deposition diamond generation device comprises a reaction part 1, the reaction part 1 comprises a casing 11 and a reaction chamber 12, the reaction chamber 12 is arranged on the inner side of the casing 11, a waveguide part 2 is fixedly installed on the outer side of the upper part of the reaction chamber 12, the lower side of the reaction chamber 12 is fixedly connected to the inner wall of the casing 11 through a connecting frame, a heat exchange part 1 3 is arranged on the inner side of the reaction chamber 12, one end of the heat exchange part 1 3 is connected to a circulating water control part 4, the other end of the circulating water control part 4 is connected to a preheating part 5, the other end of the preheating part 5 is connected to a heat exchange part 2 6, the heat exchange part 2 6 comprises a secondary heat exchanger 61, and the other end of the heat exchange part 2 6 is connected to an external cooling mechanism 7; The heat exchange part 3 includes a copper platform 31 and a primary heat exchanger 32. The copper platform 31 is arranged on the inner side of the reaction chamber 12. The primary heat exchanger 32 is fixedly installed on the inner side of the copper platform 31. The primary heat exchanger 32 includes a protective shell 321, fins 322, a hot water exchange pipe 323, a water outlet pipe 324, and a water inlet pipe 325. The protective shell 321 is fixedly installed on the inner side of the copper platform 31. The inner side of the protective shell 321 is fixedly connected with evenly distributed fins 322. The inner side of the fins 322 is penetrated with evenly distributed hot water exchange pipes 323. The two ends of the hot water exchange pipes 323 are respectively connected with the water outlet pipe 324 and the water inlet pipe 325; a circular protrusion is arranged on the fin 322, and a groove corresponding to the circular protrusion is opened on the inner side of the copper platform 31; The heat transferred by the copper platform 31 can be subjected to secondary heat exchange through the primary heat exchanger 32 and the secondary heat exchanger 61 , and the heat exchange heat can preheat the target gas introduced into the reaction chamber 12 .

[0023] Further, the reaction chamber 12 includes an antenna fixing seat 121, a coaxial waveguide 122, a quartz positioning ring 123, an air inlet pipe 124, a shielding aluminum cylinder 125, a quartz cylinder 126, and a placement table 127. The inner side of the housing 11 is provided with a shielding aluminum cylinder 125, and the lower side of the shielding aluminum cylinder 125 is fixedly installed with a placement table 127. The placement table 127 is fixedly connected to the inner side wall of the housing 11 through a connecting frame, and a quartz is provided on the upper side of the placement table 127 and on the inner side of the shielding aluminum cylinder 125. The quartz cylinder 126 is fixedly connected to the air inlet pipe 124 on its upper side, the quartz positioning ring 123 is fixedly installed on the upper side of the shielding aluminum cylinder 125, the coaxial waveguide 122 is fixedly connected to the upper side of the quartz positioning ring 123, the antenna fixing seat 121 is fixedly connected to the upper outer side of the air inlet pipe 124, and a temperature sensor 8 is arranged on the outer side of the coaxial waveguide 122, the temperature sensor 8 passes through the coaxial waveguide 122 and the air inlet pipe 124, and extends into the inner side of the air inlet pipe 124.

[0024] The target gas is introduced into the quartz tube 126 through the air inlet pipe 124, and then the microwave source 22 is started, the microwave source 22 generates microwaves, and the microwave energy is transmitted to the outside of the air inlet pipe 124 through the waveguide, and then under the action of the microwave energy, the target gas excites plasma; Furthermore, the waveguide part 2 includes a waveguide housing 21 and a microwave source 22. The waveguide housing 21 is fixedly connected to one side of the housing 11, and the microwave source 22 is fixedly installed on the inner side of the waveguide housing 21. The side of the microwave source 22 close to the reaction chamber 12 is connected to a waveguide tube, and the other end of the waveguide tube is fixedly installed on the outside of the air inlet pipe 124 through the antenna fixing seat 121 and the coaxial waveguide 122.

[0025] Furthermore, the preheating part 5 includes a preheating outer shell 51, a preheating tube group 52, a fixing frame 53, a second water inlet pipe 54, and a second water outlet pipe 55. The outer side of the waveguide tube is fixedly connected to the preheating outer shell 51, and the side of the preheating outer shell 51 away from the waveguide tube is fixedly connected to the heat exchange shell 56. The air inlet pipe 124 runs through the heat exchange shell 56. The inner side of the preheating outer shell 51 is fixedly connected to the fixing frame 53, and the inner side of the fixing frame 53 is fixedly connected to the evenly distributed preheating tube group 52. The two ends of the preheating tube group 52 are respectively connected to the second water inlet pipe 54 and the second water outlet pipe 55, and the second water inlet pipe 54 is connected to the first water outlet pipe 324.

[0026] Start the water pump 1 41 to drive the water flow in the secondary heat exchange circulation water circuit. The copper platform 31 transfers the heat inside the reaction chamber 12 to the fins 322. The fins 322 transfer the heat to the water inside the hot water exchange pipe 1 323. Then the water flow transfers the heat to the water inlet pipe 2 54 through the outlet pipe 1 324. The water inlet pipe 2 54 transfers the water flow to the preheating tube group 52. Since the preheating tube group 52 is provided with multiple groups of pipes evenly distributed, the heat is efficiently transferred to the waveguide outside the preheating tube group 52 and the air inlet pipe 124 inside the heat exchange shell 56, thereby realizing the preheating of the target gas and providing a certain heat source for the microwave. The primary heat exchange is realized. Furthermore, the circulating water control unit 4 includes a water pump 41, a solenoid valve 42, a solenoid valve 43, and a branch pipe 44. The water pump 41 is fixedly installed on the inner side of the casing 11. The water inlet of the water pump 41 is connected to the water outlet pipe 55. The water outlet of the water pump 41 is connected to a long pipe 1, and the long pipe 1 is connected to the solenoid valve 42. The other end of the water inlet pipe 325 is connected to a long pipe 2, and the long pipe 2 is connected to the branch pipe 44, and the branch pipe 44 is connected to the solenoid valve 43.

[0027] Since the temperature sensor 28 can detect the temperature of the target gas while preheating the target gas, the external system adjusts the opening size of the solenoid valve 1 42 and the opening and closing of the solenoid valve 2 43 according to its temperature state. Since the solenoid valve 2 43 is connected to the external water supply equipment, by controlling the opening and closing of the solenoid valve 2 43, the branch pipe 44 is connected to the external water supply equipment, and the branch pipe 44 controls whether water flows into the heat exchange circulation water circuit, thereby supplementing the water flow in the heat exchange circulation water circuit due to heat evaporation. At the same time, with the cooperation of adjusting the opening size of the solenoid valve 1 42, the temperature of the water flow entering the hot water pipe 1 323 can be controlled, thereby strictly controlling the preheating temperature of the target gas.

[0028] Furthermore, the secondary heat exchanger 61, the water inlet and outlet structure 62, and the temperature sensor 63, the long pipe 1 is connected to the water inlet and outlet structure 62, the water inlet and outlet structure 62 is connected to the secondary heat exchanger 61, and the secondary heat exchanger 61 is provided with a temperature sensor 63.

[0029] Furthermore, the heat exchange part 2 6 includes a secondary heat exchanger 61 including a tube shell 611, a hot water exchange tube 2 612, a shell side cavity 613, a tube side cavity 614, a tube sheet 615, and a baffle 616. The water inlet and outlet structure 62 is connected to the tube shell 611. The inner side of the tube shell 611 is provided with evenly distributed hot water exchange tubes 2 612. The hot water exchange tubes 2 612 are fixedly connected to the inner wall of the tube shell 611 through evenly distributed baffles 616. The inner ends of the tube shell 611 are fixedly connected with tube sheets 615. The tube sheets 615 separate the inner ends of the tube shell 611. The inner sides of multiple groups of hot water exchange tubes 2 612 and the separation space of the tube sheet 615 constitute the tube side cavity 614. The inner side of the tube shell 611 is separated by the baffle 616 to form a shell side cavity 613.

[0030] Furthermore, the water inlet and outlet structure 62 includes a shell-side water inlet 621, a tube-side water inlet 622, a shell-side water outlet 623, and a tube-side water outlet 624. One end of the tube shell 611 is connected to the tube-side water inlet 622 and the tube-side water outlet 624. The middle part of the tube shell 611 is connected to the shell-side water inlet 621 and the shell-side water outlet 623. The long pipe 1 is connected to the tube-side water inlet 622, and the tube-side water outlet 624 is connected to the long pipe 2.

[0031] Furthermore, the external cooling mechanism 7 includes a cooling water inlet pipe 71, a variable frequency water pump group 72, a cooling tower 73, and a cooling water outlet pipe 74. The shell side water outlet 623 is connected to the cooling water inlet pipe 71, and the other end of the cooling water inlet pipe 71 is connected to the cooling tower 73. The cooling tower 73 is connected to the water inlet of the variable frequency water pump group 72 through a short pipe. The water outlet of the variable frequency water pump group 72 is connected to the cooling water outlet pipe 74, and the cooling water outlet pipe 74 is connected to the shell side water inlet 621.

[0032] After the water flow inside the preheating tube group 52 is preheated, it flows to the tube side water inlet 622 through the water outlet pipe 2 55 and the long pipe 1, and flows into the tube side cavity 614 through the tube side water inlet 622. At the same time, the variable frequency water pump group 72 is started, so that the variable frequency water pump group 72 flows the cooling water in the cooling tower 73 to the shell side water inlet 621 through the cooling water outlet pipe 74, and then flows into the shell side cavity 613. Since the shell side cavity 613 and the tube side cavity 614 intersect with each other, secondary heat exchange is realized, and the water flow in the tube side cavity 614 is cooled again; Then the water in the tube cavity 614 flows through the tube outlet 624, the long pipe 2, the water inlet pipe 1 325, and then flows back to the hot water exchange pipe 1 323 for circulating heat exchange; Furthermore, the hot water exchange pipe 1 323, the outlet pipe 1 324, the inlet pipe 2 54, the preheating pipe group 52, the outlet pipe 2 55, the long pipe 1, the pipe side water inlet 622, the pipe side cavity 614, the pipe side water outlet 624, the long pipe 2, and the inlet pipe 1 325 are connected in sequence to form a secondary heat exchange circulation water circuit, and the cooling water outlet pipe 74, the shell side water inlet 621, the shell side cavity 613, the shell side water outlet 623, and the cooling water inlet pipe 71 are connected in sequence to form a cooling circulation water circuit.

[0033] The water flow in the shell side cavity 613 flows back to the cooling tower 73 through the shell side water outlet 623 and the cooling water inlet pipe 71 to circulate. While the water flow inside the shell side cavity 613 is flowing, the temperature of the water flow can be detected by the temperature sensor 63. According to the temperature, the external system can freely adjust the speed of the variable frequency water pump group 72 to drive the water circulation flow, so as to achieve the water temperature for maintaining the secondary heat exchange and ensure the water heat dissipation effect.

[0034] The specific usage and function of this embodiment are as follows: When in use, firstly, the diamond slice is placed on the placing table 127, and the target gas is introduced into the quartz tube 126 through the air inlet pipe 124, and then the microwave source 22 is started, the microwave source 22 generates microwaves, and the microwave energy is transmitted to the outside of the air inlet pipe 124 through the waveguide, and then under the action of the microwave energy, the target gas excites plasma. Then the electrons move downward and deposit, so that the electrons contact the diamond sheet to generate diamond; while the chemical deposition is being carried out, the water pump 41 is started to drive the water flow in the secondary heat exchange circulation waterway, the copper platform 31 transfers the heat inside the reaction chamber 12 to the fins 322, the fins 322 transfer the heat to the water inside the heat exchange water pipe 323, and then the water flow transfers the heat to the water inlet pipe 54 through the outlet pipe 324, the water inlet pipe 54 transfers the water flow to the preheating tube group 52, because the preheating tube group 52 is provided with multiple groups of pipes evenly distributed, the heat is efficiently transferred to the waveguide outside it and the air inlet pipe 124 inside the heat exchange shell 56, thereby realizing the preheating of the target gas, and also providing a certain heat source for the microwave; realizing the primary heat exchange; After the water flow inside the preheating tube group 52 is preheated, it flows to the tube side water inlet 622 through the water outlet pipe 2 55 and the long pipe 1, and flows into the tube side cavity 614 through the tube side water inlet 622. At the same time, the variable frequency water pump group 72 is started, so that the variable frequency water pump group 72 flows the cooling water in the cooling tower 73 to the shell side water inlet 621 through the cooling water outlet pipe 74, and then flows into the shell side cavity 613. Since the shell side cavity 613 and the tube side cavity 614 intersect with each other, secondary heat exchange is realized, and the water flow in the tube side cavity 614 is cooled again; Then the water in the tube cavity 614 flows through the tube outlet 624, the long pipe 2, the water inlet pipe 1 325, and then flows back to the hot water exchange pipe 1 323 for circulating heat exchange; The water flow in the shell side cavity 613 flows back to the cooling tower 73 through the shell side water outlet 623 and the cooling water inlet pipe 71 to circulate. As the water flow inside the shell side cavity 613 flows, the temperature of the water flow can be detected by the temperature sensor 63. According to the temperature, the external system can freely adjust the speed of the variable frequency water pump group 72 to drive the water circulation flow, so as to maintain the water temperature of the secondary heat exchange and ensure the water heat dissipation effect. Since the temperature sensor 28 can detect the temperature of the target gas while preheating the target gas, the external system adjusts the opening size of the solenoid valve 1 42 and the opening and closing of the solenoid valve 2 43 according to its temperature state. Since the solenoid valve 2 43 is connected to the external water supply equipment, by controlling the opening and closing of the solenoid valve 2 43, the branch pipe 44 is connected to the external water supply equipment, and the branch pipe 44 controls whether water flows into the heat exchange circulation water circuit, thereby supplementing the water flow in the heat exchange circulation water circuit due to heat evaporation. At the same time, with the cooperation of adjusting the opening size of the solenoid valve 1 42, the temperature of the water flow entering the hot water pipe 1 323 can be controlled, thereby strictly controlling the preheating temperature of the target gas.

[0035] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A low-energy microwave plasma chemical vapor deposition diamond production device, comprising a reaction unit (1), wherein the reaction unit (1) comprises a housing (11) and a reaction chamber (12), wherein the housing (11) is provided with a reaction chamber (12), wherein: A waveguide portion (2) is fixedly mounted on the outer side of the upper portion of the reaction chamber (12); the lower side of the reaction chamber (12) is fixedly connected to the inner wall of the casing (11) via a connecting frame; a heat exchange portion (3) is arranged on the inner side of the reaction chamber (12); one end of the heat exchange portion (3) is connected to a circulating water control portion (4); the other end of the circulating water control portion (4) is connected to a preheating portion (5); the other end of the preheating portion (5) is connected to a heat exchange portion (6); the heat exchange portion (6) includes a secondary heat exchanger (61); the other end of the heat exchange portion (6) is connected to an external cooling mechanism (7); The heat exchange part (3) comprises a copper platform (31) and a primary heat exchanger (32). The inner side of the reaction chamber (12) is provided with the copper platform (31). The inner side of the copper platform (31) is fixedly mounted with the primary heat exchanger (32). The primary heat exchanger (32) comprises a protective shell (321), fins (322), a water exchange water pipe (323), a water outlet pipe (324), and a water inlet pipe (325). The inner side of the copper platform (31) is fixedly mounted with the protective shell (321). A shell (321), the inner side of the protective shell (321) is fixedly connected with evenly distributed fins (322), the inner side of the fins (322) is penetrated by an evenly distributed hot water exchange pipe (323), and the two ends of the hot water exchange pipe (323) are respectively connected with a water outlet pipe (324) and a water inlet pipe (325); a circular protrusion is provided on the fin (322), and a groove corresponding to the circular protrusion is provided on the inner side of the copper platform (31); The heat transferred by the copper platform (31) can be subjected to secondary heat exchange through the primary heat exchanger (32) and the secondary heat exchanger (61), and the heat exchange heat can also be used to preheat the target gas introduced into the reaction chamber (12).

2. The low energy consumption microwave plasma chemical vapor deposition diamond production device according to claim 1, characterized in that: The reaction chamber (12) comprises an antenna fixing seat (121), a coaxial waveguide (122), a quartz positioning ring (123), an air inlet pipe (124), a shielding aluminum cylinder (125), a quartz cylinder (126), and a placement table (127); the shielding aluminum cylinder (125) is arranged on the inner side of the housing (11); the placement table (127) is fixedly mounted on the lower side of the shielding aluminum cylinder (125); the placement table (127) is fixedly connected to the inner side wall of the housing (11) via a connecting frame; the quartz cylinder (126) is arranged on the upper side of the placement table (127) and on the inner side of the shielding aluminum cylinder (125); 126), an air inlet pipe (124) is fixedly connected to the upper side of the quartz tube (126), a quartz positioning ring (123) is fixedly installed to the upper side of the shielding aluminum tube (125), a coaxial waveguide (122) is fixedly connected to the upper side of the quartz positioning ring (123), an antenna fixing seat (121) is fixedly connected to the upper outer side of the air inlet pipe (124), a second temperature sensor (8) is arranged on the outer side of the coaxial waveguide (122), and the second temperature sensor (8) passes through the coaxial waveguide (122) and the air inlet pipe (124), and extends into the inner side of the air inlet pipe (124).

3. The low energy consumption microwave plasma chemical vapor deposition diamond production device according to claim 2, characterized in that: The waveguide portion (2) comprises a waveguide housing (21) and a microwave source (22); one side of the housing (11) is fixedly connected to the waveguide housing (21); the microwave source (22) is fixedly mounted on the inner side of the waveguide housing (21); a side of the microwave source (22) close to the reaction chamber (12) is connected to a waveguide tube; the other end of the waveguide tube is fixedly mounted on the outer side of an air intake pipe (124) via an antenna fixing seat (121) and a coaxial waveguide (122).

4. The low energy consumption microwave plasma chemical vapor deposition diamond production device according to claim 3, characterized in that: The preheating part (5) comprises a preheating outer shell (51), a preheating tube group (52), a fixing frame (53), a second water inlet pipe (54), and a second water outlet pipe (55); the outer side of the waveguide tube is fixedly connected to the preheating outer shell (51); a side of the preheating outer shell (51) away from the waveguide tube is fixedly connected to a heat exchange shell (56); the air inlet pipe (124) passes through the heat exchange shell (56); the inner side of the preheating outer shell (51) is fixedly connected to the fixing frame (53); the inner side of the fixing frame (53) is fixedly connected to a uniformly distributed preheating tube group (52); the two ends of the preheating tube group (52) are respectively connected to the second water inlet pipe (54) and the second water outlet pipe (55); the second water inlet pipe (54) is connected to the first water outlet pipe (324).

5. The low energy consumption microwave plasma chemical vapor deposition diamond production device according to claim 4, characterized in that: The circulating water control unit (4) comprises a water pump (41), a solenoid valve (42), a solenoid valve (43), and a branch pipe (44). The water pump (41) is fixedly mounted on the inner side of the housing (11). The water inlet of the water pump (41) is connected to the water outlet pipe (55). The water outlet of the water pump (41) is connected to a long pipe (1), and the long pipe (1) is connected to the solenoid valve (42). The other end of the water inlet pipe (325) is connected to the long pipe (2), and the long pipe (2) is connected to the branch pipe (44). The branch pipe (44) is connected to the solenoid valve (43).

6. The low energy consumption microwave plasma chemical vapor deposition diamond production device according to claim 5, characterized in that: The second heat exchange part (6) comprises a secondary heat exchanger (61), a water inlet and outlet structure (62), and a temperature sensor (63); the long pipe (1) is connected to the water inlet and outlet structure (62); the water inlet and outlet structure (62) is connected to the secondary heat exchanger (61); and the temperature sensor (63) is arranged on the secondary heat exchanger (61).

7. The low energy consumption microwave plasma chemical vapor deposition diamond production device according to claim 6, characterized in that: The secondary heat exchanger (61) comprises a tube shell (611), a second hot water exchange pipe (612), a shell side cavity (613), a tube side cavity (614), a tube sheet (615), and a baffle (616); the water inlet and outlet structure (62) is connected to the tube shell (611); a second hot water exchange pipe (612) that is evenly distributed is arranged on the inner side of the tube shell (611); the second hot water exchange pipe (612) is connected to the second hot water exchange pipe (612) via the evenly distributed baffle (616). The inner walls of the tube shell (611) are fixedly connected, and the inner two ends of the tube shell (611) are fixedly connected to the tube sheet (615). The tube sheet (615) separates the inner two ends of the tube shell (611). The inner sides of the multiple groups of hot water exchange pipes (612) and the space separated by the tube sheet (615) form a tube-side cavity (614). The inner side of the tube shell (611) is separated by a baffle (616) to form a shell-side cavity (613).

8. The low energy consumption microwave plasma chemical vapor deposition diamond production device according to claim 7, characterized in that: The water inlet and outlet structure (62) comprises a shell-side water inlet (621), a tube-side water inlet (622), a shell-side water outlet (623), and a tube-side water outlet (624); one end of the tube shell (611) is connected to the tube-side water inlet (622) and the tube-side water outlet (624); the middle of the tube shell (611) is connected to the shell-side water inlet (621) and the shell-side water outlet (623); the long pipeline 1 is connected to the tube-side water inlet (622); and the tube-side water outlet (624) is connected to the long pipeline 2.

9. The low energy consumption microwave plasma chemical vapor deposition diamond production device according to claim 8, characterized in that: The external cooling mechanism (7) comprises a cooling water inlet pipe (71), a variable frequency water pump group (72), a cooling tower (73), and a cooling water outlet pipe (74); the shell side water outlet (623) is connected to the cooling water inlet pipe (71); the other end of the cooling water inlet pipe (71) is connected to the cooling tower (73); the cooling tower (73) is connected to the water inlet of the variable frequency water pump group (72) via a short pipe; the water outlet of the variable frequency water pump group (72) is connected to the cooling water outlet pipe (74); and the cooling water outlet pipe (74) is connected to the shell side water inlet (621).

10. The low energy consumption microwave plasma chemical vapor deposition diamond production device according to claim 9, characterized in that: The hot water exchange pipe 1 (323), the outlet pipe 1 (324), the inlet pipe 2 (54), the preheating pipe group (52), the outlet pipe 2 (55), the long pipe 1, the pipe side water inlet (622), the pipe side cavity (614), the pipe side water outlet (624), the long pipe 2, and the inlet pipe 1 (325) are sequentially connected to form a secondary heat exchange circulation water circuit, and the cooling water outlet pipe (74), the shell side water inlet (621), the shell side cavity (613), the shell side water outlet (623), and the cooling water inlet pipe (71) are sequentially connected to form a cooling circulation water circuit.

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