A continuous feed zone melting furnace

Abstract

The application belongs to the technical field of floating zone melting single crystal furnace, in particular to a continuous feeding zone melting furnace, which comprises a crystal growing furnace chamber, a silicon tube is arranged at the upper end of the interior of the crystal growing furnace chamber, a bottom quartz support is fixedly connected to the lower end of the silicon tube, a first cylinder is fixedly connected to the interior of the crystal growing furnace chamber, an induction coil is fixedly connected to the middle part of the first cylinder, the induction coil is located outside the silicon tube, a graphite preheating ring is arranged at the middle part of the upper end of the silicon tube, a plurality of water-cooled quartz tubes are arranged around the outside of the silicon tube, a seed crystal is slidingly arranged at the lower end of the interior of the crystal growing furnace chamber, a feeding assembly is arranged at the upper end of the crystal growing furnace chamber, the feeding assembly comprises a feeding bin arranged at the upper end of the crystal growing furnace chamber, the silicon tube is cooled by the water-cooled quartz tubes, a self-adapting silicon crucible is formed between the melted granular silicon and the un-melted granular silicon, and the problem that the granular silicon may be contaminated by contacting the bottom quartz support is solved.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of floating zone single crystal furnace, in particular to a continuous feeding zone melting furnace. BACKGROUND

[0002] The floating zone single crystal furnace is used for the device of floating zone purification and floating single crystal growth. It is mainly used for the purification and single crystal growth of zone melting silicon, and has been used for industrial production of semiconductor materials. The structure of the floating zone single crystal furnace is composed of two parts, i.e. the furnace chamber and the mechanical transmission part, and the electrical control cabinet and the high frequency generator part. At present, the silicon single crystal produced by the zone melting method has a small diameter, in addition, the zone melting furnace has high requirements for the impurity control of the crystal bar, and the above reasons lead to the relatively high production cost of the silicon single crystal by the zone melting method.

[0003] A patent with publication number CN208440720U discloses a continuous production zone melting furnace, which can realize the zone melting purification of multiple raw material crystal rods at one time, avoids frequent vacuumizing, thereby reducing energy consumption and consumption of inert gas, saving cost. And the time of vacuumizing is saved, the production efficiency is improved; through the setting of the raw material switching device and the product picking device, the control and operation are convenient, which is beneficial to further improve the production efficiency.

[0004] In the above prior art, when the zone melting method is used to heat granular silicon, since the zone melting method does not use a crucible, the single crystal diameter is mainly limited by the size of the heat source and the size of the raw material rod. At present, the silicon single crystal produced by the zone melting method generally has a diameter of 4 to 6 inches, which cannot meet the demand of large-size silicon wafers. Using a crucible to heat granular silicon can process a larger silicon crystal rod, but when the crucible is used to heat granular silicon, the crucible may contaminate the granular silicon, affecting the purity of the silicon crystal rod.

[0005] Therefore, the present application provides a continuous feeding zone melting furnace. SUMMARY

[0006] In order to make up for the deficiencies of the prior art and solve at least one technical problem raised in the background art.

[0007] The technical scheme adopted by the present application to solve its technical problems is: a continuous feeding zone melting furnace, comprising a crystal growing furnace chamber, a silicon tube is arranged at the upper end inside the crystal growing furnace chamber, a bottom quartz support is fixedly connected to the lower end of the silicon tube, a heating device is arranged outside the silicon tube, the heating device comprises a first cylinder fixedly connected inside the crystal growing furnace chamber, an induction coil is fixedly connected to the middle of the first cylinder, the induction coil is located outside the silicon tube, a graphite preheating ring is arranged at the middle of the upper end of the silicon tube, a plurality of water-cooled quartz tubes are arranged around the outside of the silicon tube, a seed crystal is slidably arranged at the lower end inside the crystal growing furnace chamber, a feeding assembly is arranged at the upper end of the crystal growing furnace chamber, the feeding assembly comprises a feeding bin arranged at the upper end of the crystal growing furnace chamber, a conveying assembly is fixedly connected to the lower end of the feeding bin, the conveying assembly comprises a feeding pipe mounted at the lower end of the feeding bin, and the feeding pipe is located at the upper end of the silicon tube.

[0008] Preferably, a small hole is formed in the lower end of the bottom quartz support, a high-frequency induction coil is arranged at the lower end of the bottom quartz support, and the high-frequency induction coil is fixedly connected to the inside of the crystal growing furnace chamber.

[0009] Preferably, a first cylindrical block is slidably arranged at the lower end inside the crystal growing furnace chamber, the first cylindrical block is used for mounting the seed crystal, a first circular plate is fixedly connected to the upper end of the crystal growing furnace chamber, and a sealing door is rotatably arranged at one side of the lower end of the crystal growing furnace chamber.

[0010] Preferably, a vortex plate is fixedly connected to the lower end inside the feeding bin, the vortex plate is of a hollow structure, and a plurality of rectangular holes are formed in the side walls of the vortex plate.

[0011] Preferably, a sponge sheet is mounted inside the vortex plate.

[0012] Preferably, a second circular plate is fixedly connected to the upper end of the feeding bin, a material stirring assembly is arranged at the lower end of the second circular plate, the material stirring assembly comprises a second cylindrical block rotatably connected to the lower end of the second circular plate, a rectangular cylinder slidably penetrates the middle of the second cylindrical block, a second rectangular strip is arranged at one side of the lower end of the rectangular cylinder, the second rectangular strip is located in the gap of the vortex plate, a third cylinder is fixedly connected to the lower end of the second cylindrical block, and a second cylindrical rod is slidably arranged inside the lower end of the third cylinder.

[0013] Preferably, the second rectangular strip rotatably penetrates one side of the lower end of the rectangular cylinder through a pin shaft, the second rectangular strip is fixedly connected with a gear through the pin shaft, a rack is arranged inside the rectangular cylinder, the rack is fixedly connected with the second circular plate through the second rectangular block, the gear is engaged with the rack, and the rectangular cylinder can slide outside the rack.

[0014] Preferably, a first rectangular block is fixedly connected to the middle of the outside of the feeding pipe, first cylindrical rods are fixedly connected to the two ends of the first rectangular block, respectively, first rectangular strips are rotatably connected to the opposite ends of the two first cylindrical rods, respectively, and the first rectangular strips are fixedly connected with the side walls of the crystal growing furnace chamber.

[0015] Preferably, a vibrating feeder is installed at the lower end of the feeding bin, and telescopic pipes are fixed at both ends of the feeding pipe, the telescopic pipe at the upper end is fixed with the vibrating feeder through a conical cylinder, and the telescopic pipe at the lower end is fixed with the first circular plate through a conical cylinder.

[0016] Preferably, a feeding pipe is fixed at one side of the feeding bin, the feeding bin is fixed with the crystal growing furnace chamber through an L-shaped strip, and the third circular plate is fixed at the lower end of the third cylinder and located at the upper middle part of the vortex plate.

[0017] The present application has the following advantages:

[0018] 1. The continuous feeding zone melting furnace disclosed by the present application puts the granular silicon into the silicon tube and the bottom quartz support, then turns on the induction coil to increase the temperature of the graphite preheating ring, the graphite preheating ring can start melting the granular silicon in the middle part of the silicon tube from inside to outside and from top to bottom, the water-cooled quartz tube cools the outer side of the silicon tube, and a layer of self-conforming silicon crucible is formed between the melted granular silicon and the un-melted granular silicon, thus solving the problem that the contact between the granular silicon and the bottom quartz support may cause pollution.

[0019] 2. The continuous feeding zone melting furnace disclosed by the present application puts the granular silicon into the feeding bin, so that the granular silicon falls into the gap of the vortex plate, then connects the air pump with the vortex plate, starts the air pump to generate negative pressure in the vortex plate, when there is moisture on the surface of the granular silicon, the moisture on the surface of the granular silicon can enter the inside of the vortex plate through the rectangular hole and be absorbed by the sponge sheet, at the same time, the second rectangular strip is driven to slide in the gap of the vortex plate to stir the granular silicon and dry the moisture on the surface of the granular silicon. BRIEF DESCRIPTION OF DRAWINGS

[0020] The present application will be further described below with reference to the drawings.

[0021] Figure 1 is a perspective view of the first embodiment of the present application;

[0022] Figure 2 is a cross-sectional view of the crystal growing furnace chamber;

[0023] Figure 3 is a cross-sectional view of the first cylinder;

[0024] Figure 4 is a cross-sectional view of the feeding bin;

[0025] Figure 5 is a cross-sectional view of the vortex plate;

[0026] Figure 6 is a cross-sectional view of the second circular plate;

[0027] Figure 7 is a cross-sectional view of the rectangular cylinder;

[0028] Figure 8 This is a diagram showing the location of the feeding hopper;

[0029] In the diagram: 1. Crystal growth chamber; 11. First cylinder; 12. Bottom quartz support; 13. Water-cooled quartz tube; 14. Induction coil; 15. Graphite preheating ring; 16. Silicon tube; 17. High-frequency induction coil; 18. Seed crystal; 181. First cylindrical block; 19. First circular plate; 191. Sealing door; 2. Feeding hopper; 21. Feeding pipe; 211. Telescopic pipe; 212. Conical cylinder; 213. First rectangular block; 214. First... 215. Cylindrical rod; 22. First rectangular bar; 23. Feed pipe; 24. L-shaped bar; 25. Vibrating feeder; 26. Vortex plate; 27. Sponge sheet; 28. Rectangular hole; 29. ​​Second circular plate; 20. Second cylindrical block; 210. Third cylinder; 22. Second rectangular bar; 23. Gear; 24. Rack; 25. Second rectangular block. Detailed Implementation

[0030] To make the technical means, creative features, objectives and effects of this invention easier to understand, the invention will be further described below in conjunction with specific embodiments. Example 1

[0031] like Figures 1-3 As shown in the embodiment of the present invention, a continuous feeding zone melting furnace includes a crystal growth chamber 1. A silicon tube 16 is provided at the upper end of the crystal growth chamber 1. A bottom quartz support 12 is fixedly connected to the lower end of the silicon tube 16. A heating device is provided on the outside of the silicon tube 16. The heating device includes a first cylinder 11 fixedly connected inside the crystal growth chamber 1. An induction coil 14 is fixedly connected to the middle of the first cylinder 11. The induction coil 14 is located outside the silicon tube 16. A graphite preheating ring 15 is provided at the middle of the upper end of the silicon tube 16. A plurality of water-cooled quartz tubes 13 are provided around the outside of the silicon tube 16. A seed crystal 18 is slidably arranged at the lower end of the crystal growth chamber 1. A feeding assembly is provided at the upper end of the crystal growth chamber 1. The feeding assembly includes a feeding bin 2 provided at the upper end of the crystal growth chamber 1. A conveying assembly is fixedly connected to the lower end of the feeding bin 2. The conveying assembly includes a feeding pipe 21 installed at the lower end of the feeding bin 2. The feeding pipe 21 is located at the upper end of the silicon tube 16.

[0032] Specifically, when processing a large-size silicon crystal rod, a crucible is needed, but the presence of the granular silicon will affect the thermal stability and mechanical strength of the quartz crucible, and the chemical reaction between the granular silicon and the quartz crucible will make the quartz crucible gradually brittle and the thermal stability will decrease, and the friction of the granular silicon inside the quartz crucible may produce impurities, so when using the quartz crucible, attention should be paid to its contact with the granular silicon to prevent contamination of the granular silicon. When using the zone melting furnace, the granular silicon is placed in the silicon tube 16 and the bottom quartz holder 12, and then the power is turned on to increase the temperature of the graphite preheating ring 15. The graphite preheating ring 15 can start melting the granular silicon in the middle of the silicon tube 16 from the inside out and from top to bottom. Then, the water-cooled quartz tube 13 is kept in a cooling state by circulating external water, and the water-cooled quartz tube 13 cools the outer side of the silicon tube 16. The granular silicon near the silicon tube 16 cooled by the water-cooled quartz tube 13 cannot be melted, and a layer of self-compatible silicon crucible is formed between the melted granular silicon and the unmelted granular silicon, which stabilizes the flow of the melt and avoids contamination caused by the contact between the granular silicon and the bottom quartz holder 12. Then, the seed crystal 18 is driven to move to the lower end of the melted granular silicon to perform crystal pulling and shoulder forming operations to form a silicon crystal rod. During the processing, granular silicon is added to the feeding bin 2 and then enters the silicon tube 16 through the feeding tube 21, so that continuous feeding and melting can be performed to process a large-size silicon crystal rod. The water-cooled quartz tube 13 cools the outer side of the silicon tube 16, and a layer of self-compatible silicon crucible is formed between the melted granular silicon and the unmelted granular silicon, solving the problem of possible contamination caused by the contact between the granular silicon and the bottom quartz holder 12.

[0033] As shown in Figures 2-3 , a small hole is formed in the lower end of the bottom quartz holder 12, and a high-frequency induction coil 17 is arranged at the lower end of the bottom quartz holder 12, and the high-frequency induction coil 17 is fixedly connected to the inside of the crystal growth furnace chamber 1.

[0034] Specifically, the small hole at the lower end of the bottom quartz holder 12 is smaller than the diameter of the granular silicon particles, preventing the granular silicon from falling out when it is poured into the bottom quartz holder 12. When the granular silicon at the bottom of the bottom quartz holder 12 starts to melt, the high-frequency induction coil 17 is turned on to control the silicon melt from falling freely, and the subsequent fusion, crystal pulling and shoulder forming operations are the same as those of the conventional zone melting silicon crystal growth.

[0035] As shown in Figure 2 , a first cylindrical block 181 is slidably arranged at the lower end of the inside of the crystal growth furnace chamber 1, and the first cylindrical block 181 is used to install the seed crystal 18. A first circular plate 19 is fixedly connected to the upper end of the crystal growth furnace chamber 1, and a sealing door 191 is rotatably arranged at one side of the lower end of the crystal growth furnace chamber 1.

[0036] Specifically, in the crystal growth stage, the seed crystal 18 is first installed on the upper end of the first cylindrical block 181, then the first cylindrical block 181 is driven to slide downward to drive the seed crystal 18 to guide the melt out, then the crystal growth is continuously driven by the downward movement of the seed crystal 18, so that the crystal rod is located at the lower end inside the crystal growth furnace chamber 1, then the sealing door 191 is driven to rotate, so that the crystal rod is exposed outside, and the crystal rod can be taken out.

[0037] As shown in Figures 4-5 , the lower end inside the feeding bin 2 is fixedly connected with a vortex plate 25, the inside of the vortex plate 25 is a hollow structure, and a plurality of rectangular holes 252 are formed in the side walls.

[0038] Specifically, during feeding, it is necessary to ensure that the granular silicon remains dry to prevent the risk of reaction and explosion caused by moisture or other impurities. The granular silicon is placed in the feeding bin 2, then the granular silicon falls into the gap of the vortex plate 25, then the air pump is connected with the vortex plate 25, and the negative pressure is generated in the vortex plate 25 by starting the air pump. When the surface of the granular silicon has moisture, the moisture on the surface of the granular silicon can enter the inside of the vortex plate 25 through the rectangular holes 252, so that the granular silicon can be uniformly distributed in the gap of the vortex plate 25, and the drying speed is increased.

[0039] As shown in Figure 5 , the inside of the vortex plate 25 is provided with a sponge sheet 251.

[0040] Specifically, when the moisture on the surface of the granular silicon is sucked into the inside of the vortex plate 25, the moisture is absorbed by the sponge sheet 251, and at the same time, the granular silicon or impurities can be prevented from entering the inside of the vortex plate 25.

[0041] As shown in Figure 6 , the upper end of the feeding bin 2 is fixedly connected with a second circular plate 26, the lower end of the second circular plate 26 is provided with a material stirring assembly, the material stirring assembly comprises a second cylindrical block 261 rotatably connected to the lower end of the second circular plate 26, a rectangular cylinder 264 slidably penetrating through the middle of the second cylindrical block 261, a second rectangular strip 27 provided on one side of the lower end of the rectangular cylinder 264, the second rectangular strip 27 being located in the gap of the vortex plate 25, a third cylinder 262 fixedly connected to the lower end of the second cylindrical block 261, and a second cylindrical rod 263 slidably arranged in the inside of the lower end of the third cylinder 262.

[0042] Specifically, by driving the second cylindrical block 261 to rotate, the rectangular cylinder 264 is driven to rotate, the rectangular cylinder 264 drives the second rectangular strip 27 to slide along the gap of the vortex plate 25, and the second rectangular strip 27 slides while driving the rectangular cylinder 264 to slide in the middle of the second cylindrical block 261, so as to stir the granular silicon in the gap of the vortex plate 25, and the effect of absorbing the moisture on the surface of the granular silicon is better.

[0043] As shown in Figure 7As shown, the second rectangular bar 27 is rotatably connected to the lower end of the rectangular cylinder 264, the second rectangular bar 27 is rotatably connected with the gear 272, the rectangular cylinder 264 is internally provided with a rack 273, the rack 273 is fixedly connected with the second circular plate 26 through the second rectangular block 274, the gear 272 is engaged with the rack 273, and the rectangular cylinder 264 can slide outside the rack 273.

[0044] Specifically, when the second cylindrical block 261 is driven to rotate, the second rectangular bar 27 slides along the gap of the vortex plate 25, drives the rectangular cylinder 264 to slide in the middle of the second cylindrical block 261, and drives the gear 272 to slide on one side of the rack 273 while the rectangular cylinder 264 slides in the middle of the second cylindrical block 261, so that the gear 272 drives the second rectangular bar 27 to rotate. When the second rectangular bar 27 slides in the gap of the vortex plate 25, the second rectangular bar 27 can rotate, and the particles in the gap of the vortex plate 25 are fully stirred.

[0045] As shown in the drawings, Figure 8 The first rectangular block 213 is fixedly connected to the middle of the outer side of the feeding pipe 21, the first cylindrical rod 214 is fixedly connected to both ends of the first rectangular block 213, the first rectangular bar 215 is rotatably connected to the opposite ends of the two first cylindrical rods 214, and the first rectangular bar 215 is fixedly connected to the side wall of the crystal growing furnace chamber 1.

[0046] Specifically, the feeding speed of the silicon single crystal growing process needs to be controlled to be the same as the speed of the particles of the granular silicon entering the bottom quartz holder 12, and the speed of the granular silicon entering the bottom quartz holder 12 needs to be adjusted when processing crystal rods of different sizes. The first cylindrical rod 214 drives the first rectangular block 213 to rotate, the first rectangular block 213 drives the feeding pipe 21 to rotate, and the angle of the feeding pipe 21 is closer to the vertical state, and the feeding speed is faster.

[0047] As shown in the drawings, Figure 4 , Figure 8 The vibration feeder 24 is installed at the lower end of the feeding bin 2, the telescopic pipes 211 are fixedly connected to both ends of the feeding pipe 21, the telescopic pipe 211 at the upper end is fixedly connected with the vibration feeder 24 through the conical cylinder 212, and the telescopic pipe 211 at the lower end is fixedly connected with the first circular plate 19 through the conical cylinder 212.

[0048] Specifically, when the feeding pipe 21 is driven to rotate, the telescopic pipes 211 at both ends are extended and retracted, and the conical cylinder 212 is made of rubber material and has a certain elasticity, which prevents excessive pulling during rotation of the feeding pipe 21, causing the telescopic pipe 211 to fall off. The angle of the feeding pipe 21 is adjusted by driving the feeding pipe 21 to rotate, the speed of the granular silicon entering the silicon pipe 16 is adjusted, the vibration feeder 24 is driven by the motor, the feeding pipe 21 is vibrated by driving the vibration feeder 24, the vibration frequency of the vibration feeder 24 is higher when fast feeding is required, and the vibration frequency of the vibration feeder 24 is lower when slow feeding is required. Example 2

[0049] As shown in Figure 4 , Figure 8 , another embodiment of the present application is that the feeding pipe 22 is fixed on one side of the feeding bin 2, and the feeding bin 2 is fixed with the crystal growing furnace chamber 1 through the L-shaped strip 23, and the third circular plate 265 is fixed at the lower end of the third cylinder 262, and the third circular plate 265 is located at the middle of the upper end of the vortex plate 25.

[0050] Specifically, the granular silicon is added into the feeding bin 2 through the feeding pipe 22, so that the granular silicon is located at one side of the vortex plate 25 when entering the feeding bin 2, and the third circular plate 265 is located at the middle of the upper end of the vortex plate 25, thereby preventing the granular silicon from directly entering the silicon pipe 16 from the vortex plate 25 without being absorbed by water.

[0051] The working principle is that the granular silicon is added into the feeding bin 2 through the feeding pipe 22, so that the granular silicon is located at one side of the vortex plate 25 when entering the feeding bin 2, and the third circular plate 265 is located at the middle of the upper end of the vortex plate 25, thereby preventing the granular silicon from directly entering the silicon pipe 16 from the vortex plate 25 without being absorbed by water; the granular silicon falls into the gap of the vortex plate 25, then the air pump is connected with the vortex plate 25, and negative pressure is generated in the vortex plate 25 by starting the air pump, when the granular silicon surface has moisture, the moisture on the surface of the granular silicon can enter the inside of the vortex plate 25 from the rectangular hole 252, so that the granular silicon can be uniformly distributed in the gap of the vortex plate 25, and the moisture is absorbed by the sponge sheet 251; by driving the second cylinder block 261 to rotate, the second rectangular strip 27 slides along the gap of the vortex plate 25, and the rectangular cylinder 264 slides in the middle of the second cylinder block 261, and the rectangular cylinder 264 slides in the middle of the second cylinder block 261 at the same time, and the gear 272 slides at one side of the rack 273, so that the gear 272 drives the second rectangular strip 27 to rotate, and the second rectangular strip 27 rotates while sliding in the gap of the vortex plate 25, so as to fully stir the granular silicon in the gap of the vortex plate 25;

[0052] Then the granular silicon enters the silicon pipe 16 and the bottom quartz support 12, then the power is turned on, so that the temperature of the graphite preheating ring 15 rises, and the graphite preheating ring 15 can start to melt the granular silicon in the middle of the silicon pipe 16 from inside to outside and from top to bottom, then the water cooling quartz tube 13 is kept in a cooling state by circulating external water, and the water cooling quartz tube 13 cools the outer side of the silicon pipe 16, so that the granular silicon near the silicon pipe 16 cooled by the water cooling quartz tube 13 cannot be melted, and a layer of self-forming silicon crucible is formed between the melted granular silicon and the un-melted granular silicon, so as to stabilize the flow of the melt, and avoid the granular silicon from contacting the bottom quartz support 12 to cause pollution, then the seed crystal 18 is driven to move to the lower end of the melted granular silicon, and the operations such as crystal pulling and shoulder forming are performed to form a silicon rod.

[0053] The above shows and describes the basic principles, main features and advantages of the present application. Those skilled in the art should understand that the present application is not limited to the above-mentioned embodiments, and the above-mentioned embodiments and descriptions in the specification are only to illustrate the principles of the present application. Without departing from the spirit and scope of the present application, various changes and improvements can be made to the present application, and these changes and improvements all fall within the scope of the claimed present application. The scope of protection of the present application is defined by the appended claims and their equivalents.

Claims

1. A continuous feeding zone melting furnace, comprising a crystal growing furnace chamber (1), a silicon tube (16) is arranged at the upper end inside the crystal growing furnace chamber (1), a bottom quartz support (12) is fixedly connected to the lower end of the silicon tube (16), and a heating device is arranged outside the silicon tube (16), characterized in that: The heating device comprises a first cylinder (11) fixed inside a crystal growing furnace chamber (1), an induction coil (14) is fixed in the middle of the first cylinder (11), the induction coil (14) is located outside a silicon tube (16), a graphite preheating ring (15) is arranged in the middle of the upper end of the silicon tube (16), a plurality of water-cooled quartz tubes (13) are arranged around the outside of the silicon tube (16), a seed crystal (18) is slidably arranged at the lower end inside the crystal growing furnace chamber (1), a feeding assembly is arranged at the upper end of the crystal growing furnace chamber (1), the feeding assembly comprises a feeding bin (2) arranged at the upper end of the crystal growing furnace chamber (1), a conveying assembly is fixed at the lower end of the feeding bin (2), the conveying assembly comprises a feeding pipe (21) installed at the lower end of the feeding bin (2), and the feeding pipe (21) is located at the upper end of the silicon tube (16); a small hole is arranged at the lower end of the bottom quartz support (12), and the diameter of the small hole at the lower end of the bottom quartz support (12) is smaller than that of the granular silicon particles; A vortex plate (25) is fixed at the lower end inside the feeding bin (2), the vortex plate (25) has a hollow structure, and a plurality of rectangular holes (252) are arranged in the side walls; The vortex plate (25) is internally provided with a sponge sheet (251); A second circular plate (26) is fixed at the upper end of the feeding bin (2), a stirring assembly is arranged at the lower end of the second circular plate (26), the stirring assembly comprises a second cylindrical block (261) rotatably connected to the lower end of the second circular plate (26), a rectangular cylinder (264) slidably penetrates the middle of the second cylindrical block (261), a second rectangular strip (27) is arranged at one side of the lower end of the rectangular cylinder (264), the second rectangular strip (27) is located in the gap of the vortex plate (25), a third cylinder (262) is fixed at the lower end of the second cylindrical block (261), and a second cylindrical rod (263) is slidably arranged inside the lower end of the third cylinder (262); The second rectangular strip (27) rotatably penetrates one side of the lower end of the rectangular cylinder (264) through a pin shaft, the second rectangular strip (27) is fixed with a gear (272) through a pin shaft, the rectangular cylinder (264) is internally provided with a rack (273), the rack (273) is fixed with the second circular plate (26) through a second rectangular block (274), the gear (272) is engaged with the rack (273), and the rectangular cylinder (264) can slide outside the rack (273).

2. A continuous feed zone melting furnace as claimed in claim 1, wherein: A high-frequency induction coil (17) is arranged at the lower end of the bottom quartz support (12), and the high-frequency induction coil (17) is fixed with the inside of the crystal growing furnace chamber (1).

3. A continuous feed zone melting furnace as claimed in claim 2, wherein: A first cylindrical block (181) is slidably arranged at the lower end inside the crystal growing furnace chamber (1), the first cylindrical block (181) is used for mounting the seed crystal (18), a first circular plate (19) is fixed at the upper end of the crystal growing furnace chamber (1), and a sealing door (191) is rotatably arranged at one side of the lower end of the crystal growing furnace chamber (1).

4. A continuous feed zone melting furnace as defined in claim 1, wherein: The first rectangular block (213) is fixed at the middle part outside of the feeding pipe (21), two ends of the first rectangular block (213) are respectively fixed with first cylindrical rods (214), and the opposite ends of the two first cylindrical rods (214) are respectively rotationally connected with first rectangular strips (215), and the first rectangular strips (215) are fixed with the side wall of the crystal growing furnace chamber (1).

5. A continuous feed zone melting furnace as claimed in claim 4, wherein: The lower end of the feeding bin (2) is provided with a vibrating feeder (24), and the two ends of the feeding pipe (21) are respectively fixed with telescopic pipes (211), the telescopic pipe (211) at the upper end is fixed with the vibrating feeder (24) through a conical cylinder (212), and the telescopic pipe (211) at the lower end is fixed with the first circular plate (19) through a conical cylinder (212).

6. A continuous feed zone melting furnace as claimed in claim 5, wherein: One side of the feeding bin (2) is fixed with a feeding pipe (22), the feeding bin (2) is fixed with the crystal growing furnace chamber (1) through an L-shaped strip (23), the lower end of the third circular cylinder (262) is fixed with a third circular plate (265), and the third circular plate (265) is located at the upper middle part of the vortex plate (25).

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