Growth device of silicon carbide crystal and application of growth device

Abstract

The invention provides a growth device of silicon carbide crystals and application thereof. The growth device at least comprises a cam; the inner crucible is arranged on the cam, and the side, away from the cam, of the inner crucible is provided with an opening; the outer crucible is arranged outside the inner crucible in a sleeving manner, one side of the outer crucible is provided with an opening, and the opening direction of the outer crucible is opposite to that of the inner crucible; the center rod penetrates through the cam and is arranged in the outer crucible; the counterweight is arranged on one side, far away from the inner crucible, of the cam; and the connecting piece is connected with the central rod and the counter weight. According to the silicon carbide crystal growth device and the application thereof provided by the invention, the evaporation condition of the silicon carbide raw material in the growth process can be monitored in real time, so that the process parameters are regulated and controlled, and the crystal quality is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of crystal growth, and in particular to a silicon carbide crystal growth device and application thereof. Background Art

[0002] As one of the third-generation semiconductor materials, silicon carbide has significant advantages in key parameters such as bandgap width, breakdown electric field strength, saturated electron drift rate, thermal conductivity and radiation resistance, and can meet the needs of modern industry for high power, high voltage and high frequency.

[0003] The growth process of silicon carbide crystals includes multiple stages, such as the evaporation and decomposition of silicon carbide raw materials into gas phase components, the rise of gas phase components to the vicinity of seed crystals, and the directional growth of gas phase components after crystallization on the seed crystals. In each stage, the silicon carbide raw materials need to maintain different evaporation rates, so that the process parameters in the growth process, such as nitrogen doping, heating rate or growth pressure, can be adjusted according to the evaporation rate to optimize the morphology and quality of the final crystal product. However, in the actual growth process, it is impossible to observe the evaporation of silicon carbide raw materials in real time and intuitively, so it is impossible to control the process parameters. Summary of the invention

[0004] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a silicon carbide crystal growth device and its application, which can monitor the evaporation of silicon carbide raw materials during the growth process in real time, so as to adjust the process parameters and improve the quality of the crystal.

[0005] To solve the above technical problems, the present invention is implemented through the following technical solutions.

[0006] The present invention provides a silicon carbide crystal growth device, comprising at least:

[0007] Cam;

[0008] An inner crucible is arranged on the cam, and an opening on one side of the inner crucible away from the cam is arranged;

[0009] An outer crucible is sleeved outside the inner crucible, and one side of the outer crucible is opened, and the opening direction of the outer crucible is opposite to the opening direction of the inner crucible;

[0010] a center rod, passing through the cam and disposed in the outer crucible;

[0011] a counterweight, disposed on a side of the cam away from the inner crucible; and

[0012] A connecting piece connects the central rod and the counterweight.

[0013] In an embodiment of the present invention, the cam is allowed to rotate around the central rod.

[0014] In one embodiment of the present invention, the cam includes a first component, a second component and a third component. The first component is arranged in contact with the inner crucible, and the third component is arranged between the first component and the second component.

[0015] In one embodiment of the present invention, the first component and the second component are semi-cylinders, the second component is a table, and the diameter of the first component is greater than the diameter of the second component.

[0016] In one embodiment of the present invention, the inner crucible includes a bottom and a side, the bottom is arranged in contact with the cam, the side is arranged around a side of the side away from the cam, and the inner crucible is opened on a side away from the bottom.

[0017] In an embodiment of the present invention, the inner crucible further comprises a protrusion, and the protrusion surrounds the inner wall of the side portion and is arranged in the opening direction of the inner crucible.

[0018] In one embodiment of the present invention, the outer diameter of the protruding portion is smaller than the outer diameter of the side portion, and the inner diameter of the protruding portion is equal to the inner diameter of the side portion.

[0019] In one embodiment of the present invention, the outer crucible includes a top wall and a side wall, the top wall is arranged in the opening direction of the inner crucible, and the side wall is arranged around the top wall on one side close to the inner crucible.

[0020] In one embodiment of the present invention, the side wall includes a first section and a second section, the first section extends from the top wall in the direction where the inner crucible is located, the second section extends from a side of the first section away from the top wall in the direction where the cam is located, and the inner diameter of the first section is equal to the outer diameter of the protrusion.

[0021] The present invention also provides a method for growing a silicon carbide crystal, which comprises at least the following steps:

[0022] Providing the above-mentioned silicon carbide crystal growth device, the inner crucible is arranged in contact with the surface of the first component;

[0023] After placing silicon carbide raw material in the inner crucible, a seed crystal is assembled on the outer crucible;

[0024] The inner crucible is heated, and the silicon carbide raw material is decomposed into a gas phase, which volatilizes onto the seed crystal to grow the crystal;

[0025] According to the cam and the connecting member, the weight change of the silicon carbide raw material is manifested as the change of the counterweight; and

[0026] According to the change of the counterweight, the decomposition rate of the silicon carbide raw material is monitored, and according to the decomposition rate, the parameters in the crystal growth process are regulated.

[0027] In summary, the present invention provides a silicon carbide crystal growth device and its application, which can monitor the evaporation of silicon carbide raw materials in real time during the growth process, continuously measure the weight change of silicon carbide raw materials, and adjust the process parameters of the crystal growth process according to the evaporation of raw materials, thereby improving the quality of silicon carbide crystals. Moreover, the growth device provided by the present invention has the advantages of simple structure and easy implementation, and can be used in the field of 6-inch or 8-inch crystal growth and silicon carbide raw material synthesis.

[0028] Of course, any method of implementing the present invention does not necessarily need to achieve all of the advantages mentioned above at the same time. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying creative work.

[0030] Figure 1 This is a structural diagram of the silicon carbide crystal growth device provided by the present invention.

[0031] Figure 2 for Figure 1 Schematic diagram of the Chinese and foreign crucibles.

[0032] Figure 3 for Figure 1 Top view of the Chinese and foreign crucibles.

[0033] Figure 4 for Figure 1 Schematic diagram of the inner crucible.

[0034] Figure 5 for Figure 1 Schematic diagram of the center cam, center rod and counterweight.

[0035] Figure 6 for Figure 1 Side view of the middle cam.

[0036] Description of labels:

[0037] 10. Cam; 101. First component; 102. Second component; 103. Third component; 104. Through hole; 11. Inner crucible; 111. Bottom; 112. Side; 113. First opening; 114. Raised portion; 12. Outer crucible; 121. Top wall; 122. Side wall; 1221. First subdivision; 1222. Second subdivision; 123. Support member; 124. Bearing; 125. Second opening; 13. Center rod; 14. Counterweight; 15. Connector; 16. Upper insulation portion; 17. Crucible insulation portion; 18. Lower insulation portion; 19. Silicon carbide raw material; 20. Seed crystal. DETAILED DESCRIPTION

[0038] The following describes the embodiments of the present invention by specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the following embodiments and features in the embodiments can be combined with each other without conflict.

[0039] It should be understood that the present invention can be implemented in different forms and should not be interpreted as limited to the embodiments set forth herein. On the contrary, these embodiments are provided to make the disclosure thorough and complete and to fully convey the scope of the present invention to those skilled in the art.

[0040] The technical solution of the present invention is further described in detail below in conjunction with the embodiments and drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0041] See also Figures 1 to 6As shown, the present invention provides a growth device for silicon carbide crystals, for example, including a cam 10, an inner crucible 11, an outer crucible 12, a center rod 13, a counterweight 14, and a connector 15. The inner crucible 11 is arranged on the cam 10, and the inner crucible 11 is opened on one side away from the cam 10, the outer crucible 12 is sleeved outside the inner crucible 11, and one side of the outer crucible 12 is opened, the opening direction of the outer crucible 12 is opposite to the opening direction of the inner crucible 11, the center rod 13 penetrates the cam 10 and is arranged in the outer crucible 12, the counterweight 14 is arranged on the side of the cam 10 away from the inner crucible 11, and the connector 15 connects the center rod 13 and the cam 10. In the growth device provided by the present invention, the silicon carbide raw material 19 is placed in the inner crucible 11, and the seed crystal 20 is placed in the outer crucible 12 in the direction of the opening of the inner crucible 11. After the silicon carbide raw material 19 is heated and volatilized and decomposed into a gas phase, it rises onto the seed crystal 20 and grows. Among them, before the silicon carbide raw material 19 decomposes, the inner crucible 11 and the silicon carbide raw material 19 on one side of the cam 10 are balanced with the counterweight 14 on the other side, and the counterweight 14 remains stationary. However, as the silicon carbide raw material 19 decomposes, the weight of the silicon carbide raw material 19 changes, and the two sides of the cam 10 become unbalanced and start to rotate. If the two sides of the cam 10 need to reach a new balance, the weight or static state of the counterweight 14 needs to change, that is, the change in the weight of the silicon carbide raw material 19 in the inner crucible 11 is manifested as a change in the counterweight 14, so that the decomposition rate of the silicon carbide raw material 19 in the inner crucible 11 can be monitored in real time according to the change in the counterweight 14, and the parameters in the crystal growth process can be adjusted according to the decomposition rate to optimize the crystal growth process.

[0042] See also Figure 1 , Figures 5 and 6 As shown, in one embodiment of the present invention, the shape of the cam 10 can be selected according to actual needs. In this embodiment, the cam 10, for example, includes a first component 101, a second component 102, and a third component 103, wherein the third component 103 is arranged between the first component 101 and the second component 102. Specifically, the first component 101 and the second component 102 are, for example, semi-cylinders obtained by cutting a cylinder in the height direction, and the cross-sections of the first component 101 and the second component 102 are, for example, arranged oppositely, the diameter of the first component 101 is, for example, greater than the diameter of the second component 102, and the third component 103 is, for example, a platform body, connecting the first component 101 and the second component 102.

[0043] See also Figure 1 , Figures 5 and 6As shown, in one embodiment of the present invention, a through hole 104 is further provided on the cam 10. Specifically, the through hole 104 is, for example, provided between the second component 102 and the third component 103, and passes through the cam 10 to accommodate the central rod 13 provided subsequently. The shape and size of the through hole 104 can be selected according to actual needs. In this embodiment, the through hole 104 is, for example, a regular hexagon, a circle, or a triangle.

[0044] See also Figure 1 , Figure 3 to Figure 4 As shown, in one embodiment of the present invention, the inner crucible 11 is arranged on the cam 10. The ratio of the outer diameter to the height of the inner crucible 11 is, for example, 2:5-1:1, and the inner crucible 11 includes, for example, a bottom 111 and a side 112. Specifically, the bottom 111 and the first component 101 are arranged in contact with any point A on one side of the inner crucible 11, the side 112 is arranged around the side of the bottom 111 away from the cam 10, and the first opening 113 is arranged on the side of the inner crucible 11 away from the bottom 111, so as to facilitate the filling of silicon carbide raw material 19 into the inner crucible 11. Furthermore, the inner crucible 11 also includes a protrusion 114, which is arranged around the inner wall of the side 112 in the direction of the first opening 113 of the inner crucible 11. The inner diameter of the protrusion 114 is equal to the inner diameter of the side 112, and the outer diameter of the protrusion 114 is smaller than the outer diameter of the side 112.

[0045] See also Figures 1 to 4 As shown, in one embodiment of the present invention, the outer crucible 12 is sleeved outside the inner crucible 11, and one side of the outer crucible 12 is opened, and the opening direction of the outer crucible 12 is opposite to the opening direction of the inner crucible 11. The ratio of the outer diameter to the height of the outer crucible 12 is, for example, 2:5-1:1, the outer diameter of the outer crucible 12 is, for example, greater than the outer diameter of the inner crucible 11, and the height of the outer crucible 12 is, for example, greater than the height of the inner crucible 11. Specifically, the outer crucible 12 includes, for example, a top wall 121 and a side wall 122, the top wall 121 is arranged in the direction of the first opening 113 of the inner crucible 11, and the size of the top wall 121 is greater than the size of the bottom 111, the side wall 122 is arranged around the side of the top wall 121 close to the inner crucible 11, and the height of the side wall 122 is, for example, greater than the sum of the heights of the side portion 112 and the protrusion 114, so that the outer crucible 12 can completely surround the inner crucible 11. Moreover, a second opening 125 is disposed on a side of the outer crucible 12 away from the top wall 121 , and a direction of the second opening 125 in the outer crucible 12 is opposite to a direction of the first opening 113 in the inner crucible 11 .

[0046] See also Figures 1 to 4As shown, in one embodiment of the present invention, the side wall 122 includes, for example, a first section 1221 and a second section 1222, wherein the first section 1221 extends along the height direction of the inner crucible 11 from the top wall 121 to the direction where the inner crucible 11 is located, and the second section 1222 extends along the height direction of the inner crucible 11 from the side of the first section 1221 away from the top wall 121 to the direction where the cam 10 is located. Specifically, the outer wall of the first division 1221 and the outer wall of the second division 1222 are aligned, the outer diameter of the first division 1221 is equal to the outer diameter of the second division 1222, the inner diameter of the first division 1221 is smaller than the inner diameter of the second division 1222, the height of the first division 1221 is greater than or equal to the height of the protrusion 114, and the inner diameter of the first division 1221 is equal to the outer diameter of the protrusion 114, so that when the combination of the inner crucible 11 and the outer crucible 12, that is, the junction between the first division 1221 and the second division 1222, is aligned with the junction between the protrusion 114 and the side portion 112, the first division 1221 can be placed on the side portion 112, and at the same time, the inner wall of the first division 1221 can fit with the outer wall of the protrusion 114 to limit the horizontal movement of the inner crucible 11 in the outer crucible 12, thereby improving the stability of the inner crucible 11 on the cam 10.

[0047] See also Figure 1 to Figure 2 As shown, in one embodiment of the present invention, a support member 123 is further provided on the outer wall of the outer crucible 12. Specifically, the support member 123 extends from one end of the second sub-portion 1222 away from the first sub-portion 1221 to the outside of the outer crucible 12 in a direction perpendicular to the height of the outer crucible 12 to support the outer crucible 12.

[0048] See also Figures 1 to 4 As shown, in one embodiment of the present invention, a bearing 124 is further disposed in the outer crucible 12. The bearing 124 is, for example, disposed on the inner wall of the second subsection 1222, and the bearing 124 is located on the side of the inner crucible 11 close to the cam 10. The center of the bearing 124 and the center of the through hole 104 are on the same horizontal line to support the center rod 13 that is subsequently disposed. There are, for example, a plurality of bearings 124, and the plurality of bearings 124 are, for example, symmetrically disposed. In this embodiment, there are, for example, two bearings 124.

[0049] See also Figures 1 to 4 As shown, in one embodiment of the present invention, the center rod 13 passes through the cam 10 and is arranged in the outer crucible 12. Specifically, the center rod 13 is arranged between two bearings 124, and the cross-sectional shape and size of the center rod 13 are the same as the shape and size of the through hole 104, so that the center rod 13 passes through the cam 10 through the through hole 104.

[0050] See also Figure 1 and Figure 5As shown, in one embodiment of the present invention, the counterweight 14 is disposed on a side of the cam 10 away from the inner crucible 11. The counterweight 14 is, for example, a weight.

[0051] See also Figure 1 and Figure 5 As shown, in one embodiment of the present invention, a connecting member 15 connects the counterweight 14 and the center rod 13. The connecting member 15 is, for example, a graphite rope, and the number of the connecting members 15 is, for example, two. The connecting members 15 are symmetrically arranged on the center rod 13 on both sides of the cam 10, and each connecting member 15 connects the center rod 13 and the counterweight 14 respectively.

[0052] See also Figure 1 As shown, in one embodiment of the present invention, a plurality of heat-insulating parts are further arranged outside the outer crucible 12, and the heat-insulating parts include, for example, an upper heat-insulating part 16, a crucible heat-insulating part 17, and a lower heat-insulating part 18, etc. The upper heat-insulating part 16 is arranged on the side of the top wall 121 away from the inner crucible 11, and completely covers the top wall 121, the crucible heat-insulating part 17 surrounds the side wall 122 and is arranged on the support 123, and the lower heat-insulating part 18 is arranged on the side of the support 123 away from the crucible heat-insulating part 17. By arranging the heat-insulating parts, the temperature in the inner crucible 11 can be controlled within a preset temperature, and the crystal growth process in the inner crucible 11 is ensured to proceed smoothly.

[0053] See also Figures 1 to 6 As shown, based on the above-mentioned silicon carbide crystal growth device, the present invention also provides a silicon carbide crystal growth method, which at least includes steps S11-S16.

[0054] Step S11, providing the above-mentioned silicon carbide crystal growth device, wherein the inner crucible is arranged in contact with the surface of the first component.

[0055] Step S12: After placing the silicon carbide raw material in the inner crucible, a seed crystal is mounted on the outer crucible.

[0056] Step S13, heating the inner crucible, decomposing the silicon carbide raw material into a gas phase, and volatilizing onto the seed crystal for crystal growth.

[0057] Step S14: According to the cam and the connecting piece, the weight change of the silicon carbide raw material is manifested as the change of the counterweight.

[0058] Step S15: monitor the decomposition rate of the silicon carbide raw material according to the change of the counterweight, and adjust the parameters in the crystal growth process according to the decomposition rate.

[0059] Step S16, cooling the growth device to room temperature, taking out the seed crystal, and obtaining a silicon carbide crystal.

[0060] See also Figures 1 to 6As shown, in one embodiment of the present invention, in steps S11-S12, the inner crucible 11 is arranged in contact with any point A on a side of the first component 101 facing the inner crucible 11. Specifically, on the side of the cam 10 close to the inner crucible 11, the silicon carbide raw material 19 is placed in the inner crucible 11, and the seed crystal 20 is suspended on the inner wall of the top wall 121. On the side of the cam 10 away from the inner crucible 11, the counterweight 14 is connected to the center rod 13 through a connector 15. The counterweight 14 has a preset mass, and a preset distance is maintained between the counterweight 14 and the center rod 13. On both sides of the cam 10, the weight moment on the side of the silicon carbide raw material 19 is equal to the weight moment on the side of the counterweight 14, and the two sides reach a balanced state, and the cam 10 and the counterweight 14 remain stationary.

[0061] See also Figures 1 to 6 As shown, in one embodiment of the present invention, after placing the silicon carbide raw material 19 and the seed crystal 20, the inner crucible 11 and the outer crucible 12 are evacuated, and after reaching a preset vacuum degree, an inert gas is introduced until a preset pressure is reached, and the evacuation and inert gas introduction operations are repeated at least 3 times to remove impurities. The preset vacuum degree is, for example, greater than 1Pa, the inert gas includes, for example, argon, and the preset pressure is, for example, 20mbar-30mbar.

[0062] See also Figures 1 to 6 As shown, in one embodiment of the present invention, after removing impurities, in step S13, the inner crucible 11 is heated to a preset temperature, the silicon carbide raw material 19 is decomposed into a gas phase by heat, and volatilizes onto the seed crystal 20 for crystal growth. The preset temperature is, for example, 2100°C-2400°C.

[0063] See also Figures 1 to 6 As shown, in one embodiment of the present invention, after the crystal growth starts, in steps S14-S15, the weight of the silicon carbide raw material 19 begins to decrease, and on both sides of the cam 10, the weight torque on the side of the silicon carbide raw material 19 begins to decrease, but the weight torque on the side of the counterweight 14 remains unchanged, and the two sides of the cam 10 are unbalanced, so the cam 10 will begin to rotate around the center rod 13, and the connecting member 15 will drive the counterweight 14 to start moving downward, that is, the preset distance changes, so that the two sides of the cam 10 can reach a new balance again. Therefore, in this embodiment, the weight change of the silicon carbide raw material 19 is manifested as the movement of the counterweight 14, while the weight of the counterweight 14 does not change, so that the weight change of the silicon carbide raw material 19, that is, the decomposition speed of the silicon carbide raw material 19, can be inferred based on the motion parameters of the counterweight 14, and the process parameters in the crystal growth process of step S13 can be adjusted based on the decomposition speed. Among them, the motion parameters are, for example, the motion distance or motion speed, and the process parameters are, for example, the heating temperature of the inner crucible 11.

[0064] See also Figures 1 to 6As shown, in another embodiment of the present invention, in step S14-S15, the weight of the silicon carbide raw material 19 begins to decrease, and the weight torque on the side of the silicon carbide raw material 19 on both sides of the cam 10 begins to decrease, but the weight torque on the side of the counterweight 14 remains unchanged, and the two sides of the cam 10 are unbalanced, so the cam 10 will begin to rotate around the center rod 13, and the connector 15 will drive the counterweight 14 to start moving downward. At this time, the preset mass of the counterweight 14 is adjusted so that the connector 15 and the counterweight 14 remain stationary and do not move. Therefore, in this embodiment, the weight change of the silicon carbide raw material 19 is manifested as a change in the mass of the counterweight 14, while the preset distance between the counterweight 14 and the connector 15 does not change, so that the weight change of the silicon carbide raw material 19, that is, the decomposition rate of the silicon carbide raw material 19, can be inferred based on the mass of the counterweight 14, and the process parameters in the crystal growth process of step S13 are regulated based on the decomposition rate. Among them, the process parameters are, for example, the heating temperature of the inner crucible 11.

[0065] See also Figures 1 to 6 As shown, in one embodiment of the present invention, after the crystal growth is completed, in step S16, the growth device is cooled to room temperature, the seed crystal 20 is taken out, and a silicon carbide crystal is obtained on the seed crystal 20.

[0066] In summary, the present invention provides a silicon carbide crystal growth device and its application. By arranging an inner crucible and a counterweight on both sides of a cam, the weight change of the silicon carbide raw material in the inner crucible is intuitively reflected in the change of the counterweight, and the evaporation and decomposition of the silicon carbide raw material is monitored in real time according to the change of the counterweight. Moreover, the growth device and its application provided by the present invention can adjust the process parameters in the crystal growth process according to the evaporation and decomposition of the silicon carbide raw material, so as to optimize the crystal growth process and obtain high-quality silicon carbide crystals.

[0067] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical ideas disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A silicon carbide crystal growth device, characterized in that: At least: Cam; An inner crucible is arranged on the cam, and an opening on one side of the inner crucible away from the cam is arranged; An outer crucible is sleeved outside the inner crucible, and one side of the outer crucible is opened, and the opening direction of the outer crucible is opposite to the opening direction of the inner crucible; a center rod, passing through the cam and disposed in the outer crucible; a counterweight, disposed on a side of the cam away from the inner crucible; and A connecting piece connects the central rod and the counterweight.

2. The growth device according to claim 1, characterized in that: The cam is allowed to rotate around the center rod.

3. The growth device according to claim 1, characterized in that: The cam includes a first component, a second component and a third component. The first component is arranged in contact with the inner crucible, and the third component is arranged between the first component and the second component.

4. The growth device according to claim 3, characterized in that: The first component and the second component are semi-cylinders, the second component is a table, and the diameter of the first component is greater than the diameter of the second component.

5. The growth device according to claim 1, characterized in that: The inner crucible comprises a bottom and a side portion, wherein the bottom is arranged in contact with the cam, the side portion is arranged around a side of the side portion away from the cam, and the side of the inner crucible away from the bottom is opened.

6. The growth device according to claim 5, characterized in that The inner crucible further includes a protrusion, which is arranged around the inner wall of the side portion in the opening direction of the inner crucible.

7. The growth device according to claim 6, characterized in that The outer diameter of the protrusion is smaller than the outer diameter of the side portion, and the inner diameter of the protrusion is equal to the inner diameter of the side portion.

8. The growth device according to claim 7, characterized in that The outer crucible comprises a top wall and a side wall, wherein the top wall is arranged in the opening direction of the inner crucible, and the side wall is arranged around a side of the top wall close to the inner crucible.

9. The growth device according to claim 8, characterized in that The side wall includes a first section and a second section, the first section extends from the top wall in the direction where the inner crucible is located, the second section extends from a side of the first section away from the top wall in the direction where the cam is located, and the inner diameter of the first section is equal to the outer diameter of the protrusion.

10. A method for growing silicon carbide crystals, characterized in that: At least the following steps are included: Providing a silicon carbide crystal growth device according to any one of claims 1 to 9, wherein the inner crucible is arranged in contact with the surface of the first component; After placing silicon carbide raw material in the inner crucible, a seed crystal is assembled on the outer crucible; The inner crucible is heated, and the silicon carbide raw material is decomposed into a gas phase, which volatilizes onto the seed crystal to grow the crystal; According to the cam and the connecting member, the weight change of the silicon carbide raw material is manifested as the change of the counterweight; and According to the change of the counterweight, the decomposition rate of the silicon carbide raw material is monitored, and according to the decomposition rate, the parameters in the crystal growth process are regulated.

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