Proximity exposure device and use method thereof

Abstract

The invention relates to the technical field of optical equipment, in particular to a proximity exposure device and a use method thereof. The device comprises a base, a fixed seat, a wafer bearing table, a mask table, a piezoelectric table, a measuring table and a measuring unit. The wafer bearing table is arranged on the fixed seat and can move horizontally; the mask table is used for mounting and replacing a mask and can move vertically; the piezoelectric station is used for installing a silicon wafer and adjusting a gap between the silicon wafer and the mask; the measuring unit is used for measuring the relative position of the mask and the silicon wafer. According to the proximity exposure device and the using method thereof, an objective lens is omitted, the structure is simple, miniaturization is easy to achieve, and the manufacturing cost is low; the distance between the mask and the silicon wafer can be directly measured through the measuring unit, the transverse structure can reduce the influence of gravity on the silicon wafer and a piezoelectric station, the temperature drift and nanometer jitter of the mask and the silicon wafer and the distance between the mask and the silicon wafer are obviously reduced, and leveling and focusing of the mask and the silicon wafer can be achieved more conveniently.

Description

Technical Field

[0001] The present invention relates to the technical field of optical equipment, and in particular to a proximity exposure device and a method for using the same. Background Art

[0002] In the exposure device of the related art, the light source generally uses an objective lens to realize the exposure of the mask and the silicon wafer, which has the following defects: 1. The objective lens is difficult to manufacture and the cost is high; 2. The zero position sensor and eddy current sensor are used to measure the position of the mask and the position of the silicon wafer respectively. The distance between the mask and the silicon wafer cannot be directly measured, and the proximity exposure device is not realized. At the same time, the cost of the above sensors is high; 3. Large size, difficult to miniaturize; 4. The exposure device in the related art is a vertical structure, which will introduce the influence of gravity and affect the accuracy of leveling, focusing and alignment. Summary of the invention

[0003] The present invention provides a proximity exposure device and a method for using the same, which are used to solve the defects of the exposure device in the related art, such as high cost and difficulty in miniaturization.

[0004] The present invention provides a proximity exposure device, comprising: a base, a fixing seat, a wafer holding table, a mask table, a pressure table, a measuring table and a measuring unit arranged in a vacuum chamber; wherein: The fixing seat, the mask stage and the measuring stage are all arranged on the base; The wafer stage is arranged on the fixed seat and can move horizontally; The mask stage and the pressure stage are arranged in a horizontal direction, and the mask stage is used to install and replace the mask and can move vertically; The pressure station is arranged on the wafer stage in a horizontal direction, and the pressure station is used to install the silicon wafer and adjust the gap between the silicon wafer and the mask; The measuring unit is arranged on a side of the mask stage away from the piezo stage, and is used for measuring the relative position of the mask and the silicon wafer.

[0005] According to the proximity exposure device provided by the present invention, the wafer stage comprises: A first slide, disposed on the fixed seat, wherein a movable end of the first slide can move along a first horizontal direction; a second slide, disposed at a movable end of the first slide, the movable end of the second slide being movable along a second horizontal direction, and the second horizontal direction is perpendicular to the first horizontal direction; The pressure station is arranged at the movable end of the second slide table.

[0006] According to the proximity exposure device provided by the present invention, both the first slide table and the second slide table are provided with absolute encoders.

[0007] According to the proximity exposure device provided by the present invention, a detachable mask plate is provided on the mask stage, and the mask plate is connected to the mask stage via a flexible support.

[0008] According to the proximity exposure device provided by the present invention, the mask stage is equipped with a translation module capable of vertical movement, the translation module is arranged on the base, and the movable end of the translation module is connected to the mask stage.

[0009] According to the proximity exposure device provided by the present invention, the piezoelectric station is equipped with a vertical moving unit and a rotating unit; The vertical moving unit is used to drive the silicon wafer to move in the vertical direction, and the rotating unit is used to drive the silicon wafer to rotate around the first horizontal direction and / or around the second horizontal direction.

[0010] The proximity exposure device provided according to the present invention further includes: a shock absorbing mechanism, which is arranged in the vacuum chamber and supported by the base.

[0011] According to the proximity exposure device provided by the present invention, the measuring unit includes: a white light interferometer.

[0012] The present invention also provides a method for using the proximity exposure device, comprising: S1. By adjusting the wafer stage and the pressure stage, the zero point position of the pressure stage is controlled to align the center of the silicon wafer with the center of the mask in the horizontal direction, and the mask and the silicon wafer are at a preset distance in the vertical direction. By adjusting the measuring stage, the zero point position of the measuring unit is controlled to be the center of the mask; S2, replace the mask, measure the gap between the mask and the silicon wafer in real time through the measuring unit to see whether it is in the exposure position, and use the measuring unit to find the center of the mask; S3, if the distance between the mask and the silicon wafer is greater than the preset value, the distance between the two is adjusted by the mask stage; if the distance between the mask and the silicon wafer is less than the preset value, the piezoelectric stage is used to perform leveling and focusing according to the calculated distance; S4. After completing leveling and focusing, perform the first exposure; S5. Repeat steps S1 to S4 to perform multiple exposures.

[0013] According to the method for using the proximity exposure device provided by the present invention, during the exposure process of step S5, the method specifically includes: S51, using an ultraviolet light source to expose the mask and the silicon wafer multiple times, determining the focal length and focal depth of the ultraviolet light source, confirming the focal length through a clear imaging position, and exposing at the confirmed focal length each time; S52. After determining the focal length and focal depth, the white light interferometer is removed to form a channel for ultraviolet light. The entire pattern on the mask is projected onto the adhesive surface of the wafer through the ultraviolet light to complete the exposure of the wafer.

[0014] The present invention provides a proximity exposure device, comprising: a base, a fixed base, a wafer stage, a mask stage, a pressure plate, a measuring stage and a measuring unit arranged in a vacuum chamber. The fixed base, the mask stage and the measuring stage are all arranged on the base; the wafer stage is arranged on the fixed base and can move horizontally; the mask stage and the pressure plate are arranged in the horizontal direction, and the mask stage is used to install and replace the mask and can move vertically; the pressure plate is arranged on the wafer stage in the horizontal direction, and the pressure plate is used to install the silicon wafer and adjust the gap between the silicon wafer and the mask; the measuring unit is arranged on the side of the mask stage away from the pressure plate, and is used to measure the relative position of the mask and the silicon wafer. The present invention provides a proximity exposure device, which eliminates the objective lens, has a simple structure, is easy to miniaturize, and is low in cost. The distance between the mask and the silicon wafer can be directly measured by a measuring unit. Compared with the related art that uses a zero position sensor and an eddy current sensor to respectively measure the position of the mask and the position of the silicon wafer, the proximity exposure device has the advantages of direct measurement and low cost, and can also realize a proximity exposure device. The horizontal structure can effectively reduce the influence of gravity on the silicon wafer and the piezoelectric stage. At the same time, the temperature drift and nano-jitter of the mask and the silicon wafer themselves and the distance between each other in the horizontal structure are significantly lower than those in the vertical structure, which is more convenient to realize the leveling and focusing of the mask and the silicon wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to more clearly illustrate the technical solutions in the present invention or the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0016] Figure 1 It is a schematic diagram of the structure of a proximity exposure device provided in one embodiment of the present invention.

[0017] Figure 2 It is one of the flow charts of the method for using the proximity exposure device provided in one embodiment of the present invention.

[0018] Figure 3 This is a second flow chart of a method for using a proximity exposure device provided in one embodiment of the present invention.

[0019] Figure 4 It is a schematic structural diagram of a mask, a mask stage, a top wire and a flexible support provided in one embodiment of the present invention.

[0020] Reference numerals: 1: fixed seat; 2: first slide; 3: second slide; 4: pressure stage; 5: mask stage; 6: measuring stage; 7: measuring unit; 8: shock absorbing mechanism; 9: vacuum chamber; 10: base; 11: top screw; 12: flexible support; 13: mask. DETAILED DESCRIPTION

[0021] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the drawings of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0022] In the description of the present embodiment, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present embodiment and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present embodiment.

[0023] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of this embodiment, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0024] In this embodiment, unless otherwise clearly specified and limited, the terms "set", "install", "connect", "connect", "fix" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For those of ordinary skill in the art, the specific meanings of the above terms in this embodiment can be understood according to specific circumstances.

[0025] In the embodiments of the present invention, unless otherwise clearly specified and limited, the first feature being "above" or "below" the second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, the first feature being "above", "above" and "above" the second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. The first feature being "below", "below" and "below" the second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0026] Combine the following Figure 1 and Figure 4 A proximity exposure device of the present invention is described, comprising: a base 10 arranged in a vacuum chamber 9, a fixing seat, a wafer holding table, a mask table 5, a pressure table 4, a measuring table 6 and a measuring unit 7.

[0027] Among them, the fixed seat, mask table 5 and measuring table 6 are all arranged on the base 10; the wafer holding table is arranged on the fixed seat and can be moved horizontally; the mask table 5 and the pressure stage 4 are arranged in the horizontal direction, the mask table 5 is used to install and replace the mask 13 and can be moved vertically; the pressure stage 4 is arranged on the wafer holding table in the horizontal direction, the pressure stage 4 is used to install the silicon wafer and adjust the gap between the silicon wafer and the mask 13; the measuring unit 7 is arranged on the side of the mask table 5 away from the pressure stage 4, and is used to measure the relative position of the mask and the silicon wafer.

[0028] Specifically, the vacuum chamber 9 provides a vacuum environment, and all components of the proximity exposure device are arranged in the vacuum chamber 9. The base 10 provides support for the device components. The fixed seat, the measuring table 6 and the mask table 5 are all installed on the base 10, and the pressure stage 4 is installed on the fixed seat. The measuring unit 7 is installed on the measuring table 6, so that the measuring unit 7, the mask table 5 and the pressure stage 4 are arranged horizontally, that is, the fixed seat, the wafer carrier, the pressure stage 4, the mask table 5 and the measuring unit 7 of the device are a horizontal structure, replacing the vertical structure in the prior art. The above-mentioned horizontal structure of the device can effectively reduce the influence of gravity on the silicon wafer and the pressure stage 4. At the same time, the temperature drift and nano-jitter of the mask and the silicon wafer themselves and the distance between each other in the horizontal structure will be significantly lower than that of the vertical structure, which is more convenient to realize the leveling and focusing of the mask and the silicon wafer.

[0029] In the device, the silicon wafer is fixed by a pressing stage 4, and the fixing method is a pressing fixation. After exposure, the silicon wafer is replaced by loosening the pressing plate of the silicon wafer, breaking the vacuum, and taking out the silicon wafer.

[0030] The wafer stage in the device can move horizontally, and a double slide structure can be adopted, thereby driving the pressure stage 4 to move in a large range along the X-axis and Y-axis directions. Figure 1As shown, the left-right direction in the figure can be defined as the X-axis, the front-back direction in the figure as the Y-axis (the X-axis and Y-axis are two horizontal directions), and the up-down direction in the figure as the Z-axis (the Z-axis is the vertical direction). In other words, the X-axis, Y-axis, and Z-axis are rectangular coordinate systems perpendicular to each other. The wafer stage is responsible for carrying the wafer, and there is a flexible locking unit on the wafer stage. According to the measured feedback value, the number of turns of the locking screw is confirmed.

[0031] The mask stage 5 in the present device is equipped with a detachable mask plate, which can install and replace the mask 13, and can drive the mask to move in a large range of micrometers along the Z-axis direction. The piezo stage 4 in the present device adopts a micro-motion piezo stage 4, which mainly realizes the nanometer-level adjustment of the gap between the mask and the silicon wafer, and has the function of rotating in a small range along the Z-axis direction and around the X-axis and Y-axis, so as to realize leveling and focusing.

[0032] The measuring unit 7 is installed on the measuring table 6. The measuring unit 7 can use a white light interferometer to measure the relative position of the mask and the silicon wafer. The measuring table 6 has two degrees of freedom, X and Y, and is controlled according to the measured gap value. The piezoelectric stage 4 adjusts the Z axis direction and around the X axis and Y axis according to the real-time feedback value of the white light interferometer to achieve nano-level leveling and focusing of the mask and the silicon wafer. The piezoelectric stage 4 realizes the micro-motion function.

[0033] It can be seen that the proximity exposure device provided by the present invention eliminates the objective lens, has a simple structure, is easy to miniaturize, and is low in cost; the distance between the mask and the silicon wafer can be directly measured by the measuring unit 7, compared with the use of a zero position sensor and an eddy current sensor in the related art to respectively measure the position of the mask and the position of the silicon wafer, it has the advantages of direct measurement and low cost, and can also realize a proximity exposure device; the horizontal structure can effectively reduce the influence of gravity on the silicon wafer and the pressure stage 4, and at the same time, the temperature drift and nano-jitter of the mask and the silicon wafer themselves and the distance between each other in the horizontal structure will be significantly lower than that in the vertical structure, which is more convenient to achieve leveling and focusing of the mask and the silicon wafer.

[0034] In one embodiment of the present invention, the wafer stage includes: a first slide 2 and a second slide 3. The first slide 2 is arranged on a fixed seat, and the movable end of the first slide 2 can move along a first horizontal direction; the second slide 3 is arranged at the movable end of the first slide 2, and the movable end of the second slide 3 can move along a second horizontal direction, and the second horizontal direction is perpendicular to the first horizontal direction; the pressure station 4 is arranged at the movable end of the second slide 3. Specifically, the first slide 2 moves along the X-axis direction, and the second slide 3 moves along the Y-axis direction, thereby driving the pressure station 4 to achieve a large range of movement of the X-axis and the Y-axis, and the first slide 2 and the second slide 3 complete the displacement between different exposure fields of the silicon wafer.

[0035] In one embodiment of the present invention, the first slide 2 and the second slide 3 are both Invar slides, which include a slide base 10, a motor, a slide rail and a ball screw. All parts of the above-mentioned translation unit are made of Invar, wherein: the slide base 10 is a fixed end, on which a slide rail is installed to limit the moving direction of the slide, and the motor provides driving force, which is converted into linear reciprocating movement of the slide through the ball screw.

[0036] In one embodiment of the present invention, the first slide 2 and the second slide 3 are both provided with absolute encoders, and the displacement of the first slide 2 and the second slide 3 is measured by the absolute encoder, so that the displacement of the piezoelectric stage 4 in the X-axis and Y-axis directions can be measured.

[0037] In one embodiment of the present invention, Figure 4 As shown, a detachable mask plate is provided on the mask stage 5, and the mask plate is connected to the mask stage 5 via a flexible support 12 to achieve pitch and yaw of the mask. In this embodiment, a detachable mask plate is provided on the mask stage 5 to achieve replacement of the mask 13. Specifically, the method of replacing the mask 13 is as follows: The mask 13 is mounted on the mask stage 5, and there is a mask plate on the mask stage 5. At the same time, the mask plate is mounted on a flexible support 12 with a top screw 11 for adjustment. The verticality of the mask 13 and the ultraviolet light source can be adjusted. When the mask 13 needs to be replaced, the mask plate on the mask stage is removed, and after breaking the vacuum, a new mask plate is installed. The above device can ensure the repeatability of the installation of the mask 13. When replacing the mask 13, it is generally not necessary to readjust the flexible hinge to complete the replacement of the mask. The mask 13 is fixed in the vacuum by bonding with a low-expansion UV adhesive for vacuum.

[0038] In one embodiment of the present invention, the mask stage 5 is provided with a translation module capable of vertical movement, the translation module is arranged on the base 10, and the movable end of the translation module is connected to the mask stage 5. The translation module in this embodiment can also adopt the same structure as the first slide 2 and the second slide 3, that is, an Invar slide, but the slide in this embodiment moves along the Z-axis direction, which includes: a slide base 10, a motor, a slide rail and a ball screw, and all parts in the above translation unit are made of Invar, wherein: the slide base 10 is a fixed end, on which a slide rail is installed to limit the moving direction of the slide, and the motor provides driving force, and the above translation module is used to achieve a large range of micron-level movement of the mask in the Z-axis direction.

[0039] In one of the embodiments of the present invention, the pressure station 4 is equipped with a vertical moving unit and a rotating unit; the vertical moving unit is used to drive the silicon wafer to move in the vertical direction, and the rotating unit is used to drive the silicon wafer to rotate around the first horizontal direction and / or around the second horizontal direction. Specifically, the vertical moving unit configured in the pressure station 4 in this embodiment can realize its micro-motion along the Z-axis direction, and the rotating unit has the function of rotating around the X-axis direction and / or around the Y-axis direction. According to actual needs, if it is necessary to meet the above two rotation functions at the same time, two rotating units are set at the same time to simultaneously meet the functions of rotating around the X-axis direction and rotating around the Y-axis direction. Among them, the vertical moving unit can adopt a micro-motion slide structure similar to the above, and the rotating unit can adopt a micro-motion turntable structure.

[0040] In one embodiment of the present invention, the proximity exposure device further includes: a shock absorbing mechanism 8, which is arranged in the vacuum chamber 9 and supported on the base 10. The shock absorbing mechanism 8 acts on the base 10, and the shock absorbing design adopted is a passive shock isolation, which can block high-frequency and low-frequency disturbances, and prevent the high-frequency and low-frequency of the environment from affecting the exposure device. Optionally, the shock absorbing mechanism 8 can adopt a vibration absorber or a damper, such as a hydraulic damper, a gas pressure damper or an elastic element.

[0041] In one embodiment of the present invention, the measuring unit 7 includes: a white light interferometer. The measuring table 6 is mainly used to fix the white light interferometer and realize the movement of the white light interferometer along the X-axis direction and the Y-axis direction. The white light interferometer is used to measure the relative position of the mask and the silicon wafer, that is, it is responsible for measuring the gap jitter and gap drift between the mask and the silicon wafer. At the same time, the white light interferometer needs to be moved away during exposure to realize exposure. After moving away, the stage 4 needs to be pressed to compensate in the Z-axis direction.

[0042] like Figure 2 and Figure 3 As shown, the present invention also provides a method for using a proximity exposure device. The method for using the proximity exposure device comprises the following steps: First, the proximity exposure device is initialized and reset, that is, when implementing proximity exposure, it is necessary to ensure that all devices are located at the origin position.

[0043] S1, by adjusting the wafer holding stage and the pressure stage 4, the zero point position of the pressure stage 4 is controlled to be the position where the center of the silicon wafer is aligned with the center of the mask in the horizontal direction, and the mask and the silicon wafer are at a preset distance (the preset distance is preferably set to 200um) in the vertical direction, and the zero point position of the measuring unit 7 is controlled to be the center of the mask by adjusting the measuring stage 6; S2, replace the mask, measure the gap between the mask and the silicon wafer in real time through the measuring unit 7 to see whether it is in the exposure position, and use the measuring unit 7 to find the center of the mask, and the measurement is completed by using three points to determine a plane; S3, if the distance between the mask and the silicon wafer is greater than the preset value, the distance between the two is adjusted by the mask stage 5; if the distance between the mask and the silicon wafer is less than the preset value, the piezo stage 4 is used to perform leveling and focusing according to the calculated distance; S4. After completing leveling and focusing, perform the first exposure; S5. Repeat steps S1 to S4 to perform multiple exposures.

[0044] In step S3, after the measurement is completed, according to the measured value, if the distance between the mask and the silicon wafer is far, the mask stage 5 is used to adjust the distance in the Z-axis direction. If the distance between the mask and the silicon wafer is close, the piezo stage 4 is used to achieve leveling and focusing with a resolution of 3 nanometers according to the calculated distance.

[0045] The present invention provides a method for using a proximity exposure device, which adopts the proximity exposure device in the above embodiment of the present invention, which has the advantages of miniaturization and low expansion, can directly measure the parallelism of the mask and the silicon wafer, and realize nanometer-level high-precision compensation.

[0046] Furthermore, the advantages of using the above-mentioned device of the present invention are: the device is miniaturized, can expose 2-inch silicon wafers, and can be used under vacuum. It is made of Invar material as a whole, has low expansion, can measure the gap between the silicon wafer and the mask in real time, and can achieve alignment with 3 nanometer accuracy. The pressure stage 4 can also compensate for the gap temperature drift in real time. Compared with other lithography devices, this device has the advantages of miniaturization, low expansion, alignment accuracy and temperature drift compensation accuracy, and can quickly verify the performance of the light source.

[0047] In one embodiment of the present invention, the exposure process in step S5 specifically includes: S51, using an ultraviolet light source to expose the mask and the silicon wafer multiple times, determining the focal length and focal depth of the ultraviolet light source, confirming the focal length through a clear imaging position, and exposing at the confirmed focal length each time; S52. After determining the focal length and focal depth, the white light interferometer is removed to form a channel for ultraviolet light. The entire pattern on the mask is projected onto the adhesive surface of the wafer through the ultraviolet light to complete the exposure of the wafer.

[0048] The above steps are as follows: After the device is initialized, the silicon wafer and mask are replaced, and the Z-direction drift and jitter of the silicon wafer and mask are directly measured using a white light interferometer. At the same time, the jitter and drift of the piezo stage 4 in the X and Y directions are monitored using a white light interferometer to determine whether they meet the exposure index and whether the exposure conditions are met. After the conditions are met, the mask and silicon wafer are exposed multiple times using an ultraviolet light source to find the focal length and focal depth of the ultraviolet light source. After finding the position with the clearest imaging, the focal length is confirmed and exposed at this focal length each time. After finding the appropriate focal length and depth of focus, and when the Z-direction gap jitter and drift between the mask and the silicon wafer, and the X- and Y-direction jitter drift of the pressure stage 4 meet the indicators, the white light interferometer is removed to make way for the ultraviolet light channel, and the entire pattern on the mask is projected onto the adhesive surface of the wafer through ultraviolet light to complete the exposure of the wafer.

[0049] The device embodiments described above are merely illustrative, wherein the units described as separate components may or may not be physically separated, and the components displayed as units may or may not be physical units, i.e., they may be located in one place, or they may be distributed over multiple units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the present embodiment. Those of ordinary skill in the art may understand and implement the present invention without creative effort.

[0050] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A proximity exposure device, characterized in that: include: A base (10), a fixing seat (1), a wafer support table, a mask table (5), a pressure table (4), a measuring table (6) and a measuring unit (7) are arranged in a vacuum chamber (9); wherein: The fixing seat (1), the mask stage (5) and the measuring stage (6) are all arranged on the base (10); The wafer stage is arranged on the fixed seat (1) and is capable of horizontal movement; The mask stage (5) and the pressure stage (4) are arranged in a horizontal direction, and the mask stage (5) is used to install and replace the mask and can move vertically; The pressure station (4) is arranged on the wafer support table in a horizontal direction, and the pressure station (4) is used to install the silicon wafer and adjust the gap between the silicon wafer and the mask; The measuring unit (7) is arranged on a side of the mask stage (5) away from the piezo stage (4) and is used to measure the relative position of the mask and the silicon wafer.

2. The proximity exposure device according to claim 1, characterized in that: The wafer stage comprises: A first slide (2) is arranged on the fixed seat (1), and a movable end of the first slide (2) is capable of moving along a first horizontal direction; A second slide (3) is arranged at a movable end of the first slide (2), the movable end of the second slide (3) being capable of moving along a second horizontal direction, and the second horizontal direction is perpendicular to the first horizontal direction; The pressure station (4) is arranged at the movable end of the second slide table (3).

3. The proximity exposure device according to claim 2, characterized in that: The first slide table (2) and the second slide table (3) are both provided with absolute encoders.

4. The proximity exposure device according to claim 1, characterized in that: A detachable mask plate is provided on the mask stage (5), and the mask plate is connected to the mask stage (5) via a flexible support.

5. The proximity exposure device according to claim 1, characterized in that: The mask stage (5) is provided with a translation module capable of vertical movement, the translation module being arranged on the base (10), and the movable end of the translation module being connected to the mask stage (5).

6. The proximity exposure device according to claim 2, characterized in that: The piezoelectric station (4) is equipped with a vertical moving unit and a rotating unit; The vertical moving unit is used to drive the silicon wafer to move in the vertical direction, and the rotating unit is used to drive the silicon wafer to rotate around the first horizontal direction and / or around the second horizontal direction.

7. The proximity exposure device according to any one of claims 1 to 6, characterized in that: Also includes: The shock absorbing mechanism (8) is arranged in the vacuum chamber (9) and supported by the base (10).

8. The proximity exposure device according to any one of claims 1 to 6, characterized in that: The measuring unit (7) comprises: a white light interferometer.

9. A method for using a proximity exposure device, characterized in that: include: S1, by adjusting the wafer holding table and the pressure plate (4), the zero point position of the pressure plate (4) is controlled so that the center of the silicon wafer is aligned with the center of the mask in the horizontal direction, and the mask and the silicon wafer are at a preset distance in the vertical direction, and the zero point position of the measuring unit (7) is controlled so that the zero point position is the center of the mask by adjusting the measuring table (6); S2, replacing the mask plate, measuring in real time by the measuring unit (7) whether the gap between the mask and the silicon wafer is in the exposure position, and using the measuring unit (7) to find the center of the mask; S3, if the distance between the mask and the silicon wafer is greater than a preset value, the distance between the two is adjusted by the mask stage (5); if the distance between the mask and the silicon wafer is less than the preset value, the piezoelectric stage (4) is used to perform leveling and focusing according to the calculated distance; S4. After completing leveling and focusing, perform the first exposure; S5. Repeat steps S1 to S4 to perform multiple exposures.

10. The method for using the proximity exposure device according to claim 9, characterized in that: The exposure process in step S5 specifically includes: S51, using an ultraviolet light source to expose the mask and the silicon wafer multiple times, determining the focal length and focal depth of the ultraviolet light source, confirming the focal length through a clear imaging position, and exposing at the confirmed focal length each time; S52. After determining the focal length and focal depth, the white light interferometer is removed to form a channel for ultraviolet light. The entire pattern on the mask is projected onto the adhesive surface of the wafer through the ultraviolet light to complete the exposure of the wafer.

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