Large-numerical-aperture mixed-wave direct-writing photoetching lens

By designing a large numerical aperture mixed wave direct writing lithography lens, the chromatic aberration is corrected using a dual telecentric structure and a multi-chip structure, the limitations of ultraviolet laser direct writing lithography equipment in the PCB lithography process in the prior art are solved, and the lithography effect with high resolution and comprehensive coverage is achieved.

CN119960271AActive Publication Date: 2025-05-09NANJING WAVELENGTH OPTO ELECTRONICS SCI & TECH CO LTD
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Patent Information

Application Number
CN202510431053.7
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-04-08
Publication Date
2025-05-09
Estimated Expiration
2045-04-08

AI Technical Summary

Technical Problem

Existing ultraviolet laser direct-write lithography equipment is mostly designed for light sources of a single wavelength, resulting in limitations in the PCB lithography process, making it difficult to achieve high resolution and comprehensive coverage.

Method used

A large numerical aperture mixed wave direct writing lithography lens is designed, adopting a dual telecentric structure, and the object and image square have high telecentricity at the same time. The chromatic aberration is corrected through a multi-sheet structure, and ultraviolet wide spectrum and I-line high-transmissive glass materials are used to improve the system's transmittance and radiation resistance.

Benefits of technology

High-resolution lithography in wide band (350nm-430nm) is achieved, which improves the lithography resolution and production capacity, has small overall color difference, high system transmittance and good radiation resistance.

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Abstract

The invention relates to a large-numerical-aperture mixed-wave direct-writing photoetching lens, which comprises a first lens group, a second lens group, a diaphragm, a third lens group and a fourth lens group from an object side to an image side, the first lens group, the second lens group, the diaphragm, the third lens group and the fourth lens group are sequentially arranged along the axis direction of light; the lens is composed of plane glass and 14 lenses, and has the advantages of ultraviolet wide spectrum, large object space numerical aperture, small overall chromatic aberration and the like.
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Description

Technical Field

[0001] The invention relates to a technology for directly performing high-precision micro-nano processing on a material surface using an ultraviolet laser beam, and in particular to a large numerical aperture mixed-wave direct-writing lithography lens. Background Art

[0002] UV laser direct writing lithography controls the laser power, scanning speed, and focusing state to focus the UV laser beam to a very small point, directly acting on the surface of the material, thereby achieving high-precision, high-resolution micro-nano processing. The direct writing lithography lens is an important assembly part of the exposure engine of the direct writing lithography equipment, responsible for focusing the laser beam and accurately projecting it onto the target substrate. The design parameters and imaging quality of the lithography lens directly determine the accuracy of the line width and line spacing during the exposure process.

[0003] At present, in the industry, direct writing lithography equipment is mostly designed for single wavelength (405nm±5nm) ultraviolet laser light source. However, single wavelength lithography equipment has limitations in PCB lithography process. According to the Rayleigh criterion, the resolution formula σ=kl*λ / NA (λ is the wavelength of the light source, NA is the numerical aperture, and kl is the lithography process factor). It can be seen that the resolution is related to the working wavelength and numerical aperture. When the lithography process factor is constant, when the working wavelength is reduced and the numerical aperture is increased at the same time, the PCB lithography process can be improved. Using the mixed wave light source of LED and laser, the numerical aperture of the light source can be increased, so that the PCB lithography process can be fully covered. In order to further improve the production capacity of ultraviolet direct writing lithography equipment, it is necessary to design lithography lenses for wide bands (350nm-430nm). A large numerical aperture mixed wave direct writing lithography lens is proposed, which adopts a double telecentric structure, and the object and image sides have high telecentricity at the same time, and the distortion of the whole system is small. However, due to the wide spectrum of the light source and the large object-side numerical aperture, a multi-piece structure is required to correct chromatic aberration. Since ordinary optical glass absorbs light strongly in the blue-violet band, it is necessary to control the number of lenses while paying attention to the selection of materials to ensure the transmittance of the projection lens. Summary of the invention

[0004] In order to solve the above technical problems, the present application provides a large numerical aperture hybrid wave direct writing lithography lens, the lens comprising a first lens group, a second lens group, an aperture, a third lens group and a fourth lens group arranged in sequence along the axis direction of light from the object side to the image side; The first lens group includes a flat glass, a first lens with negative optical power, a second lens with positive optical power, and a third lens with positive optical power, which are arranged in sequence; The second lens group includes a fourth lens with a negative focal power, a fifth lens with a positive focal power, a sixth lens with a positive focal power, and a seventh lens with a negative focal power arranged in sequence; The third lens group includes an eighth lens with a negative focal power, a ninth lens with a positive focal power, a tenth lens with a positive focal power, and an eleventh lens with a negative focal power arranged in sequence; The fourth lens group includes a twelfth lens with a positive focal power, a thirteenth lens with a positive focal power, and a fourteenth lens with a positive focal power arranged in sequence; The principal wavelength telecentricity of the object side and the image side of the lens is less than 0.1. The numerical aperture of the object side is NA, 0.1 ≤ NA ≤ 0.15, and the numerical aperture of the image side is NA', 0.078 ≤ NA' ≤ 0.12. The conjugate distance of the lens is L, 550 mm ≤ L ≤ 650 mm.

[0005] Furthermore, the lens satisfies the following relational expressions: 0.018 < f1 / f < 0.022; -0.034 < f2 / f < -0.03; -0.039 < f3 / f < -0.035; 0.024 < f4 / f < 0.028; where f is the focal length of the lens in the main wavelength band, f1 is the focal length of the first lens group in the main wavelength band, f2 is the focal length of the second lens group in the main wavelength band, f3 is the focal length of the third lens group in the main wavelength band, and f4 is the focal length of the fourth lens group in the main wavelength band.

[0006] Furthermore, f = 3842.45 mm, f1 = 78.977 mm, f2 = -122.34 mm, f3 = -142.22 mm, f4 = 101.72 mm.

[0007] Furthermore, the first lens to the fourteenth lens are all single lenses and are located on the same optical axis.

[0008] Furthermore, the magnification of the lens is β = 1.27.

[0009] Furthermore, the curvature radii of the object side and the image side of the flat glass are both ∞; The curvature radius R1 of the object side surface and the curvature radius R2 of the image side surface of the first lens satisfy: 0.6 ≤ (R1 - R2) / (R1 + R2) ≤ 1; The curvature radius R3 of the object side surface and the curvature radius R4 of the image side surface of the second lens satisfy: 1.9 ≤ (R3 - R4) / (R3 + R4) ≤ 2.3; The curvature radius R5 of the object side surface and the curvature radius R5 of the image side surface of the third lens satisfy: -1 ≤ (R5 - R6) / (R5 + R6) ≤ -0.6; The radius of curvature R7 of the object side of the fourth lens and the radius of curvature R8 of the image side satisfy: 8 ≤ (R7 - R8) / (R7 + R8) ≤ 12; The radius of curvature R9 of the object side of the fifth lens and the radius of curvature R10 of the image side satisfy: 2.3 ≤ (R9 - R10) / (R9 + R10) ≤ 2.7; The radius of curvature R11 of the object side of the sixth lens and the radius of curvature R12 of the image side satisfy: -3.6 ≤ (R11 - R12) / (R11 + R12) ≤ -3.2; The radius of curvature R13 of the object side of the seventh lens and the radius of curvature R14 of the image side satisfy: 2.4 ≤ (R13 - R14) / (R13 + R14) ≤ 2.8; The radius of curvature R15 of the object side of the eighth lens and the radius of curvature R16 of the image side satisfy: -2.8 ≤ (R15 - R16) / (R15 + R16) ≤ -2.4; The radius of curvature R17 of the object side of the ninth lens and the radius of curvature R18 of the image side satisfy: 3.1 ≤ (R17 - R18) / (R17 + R18) ≤ 3.5; The radius of curvature R19 of the object side of the tenth lens and the radius of curvature R20 of the image side satisfy: 3.1 ≤ (R19 - R20) / (R19 + R20) ≤ 3.5; The radius of curvature R21 of the object side of the eleventh lens and the radius of curvature R22 of the image side satisfy: -105 ≤ (R21 - R22) / (R21 + R22) ≤ -95; The radius of curvature R23 of the object side of the twelfth lens and the radius of curvature R24 of the image side satisfy: 0.5 ≤ (R23 - R24) / (R23 + R24) ≤ 1; The radius of curvature R25 of the object side of the thirteenth lens and the radius of curvature R26 of the image side satisfy: 5.4 ≤ (R25 - R26) / (R25 + R26) ≤ 6; The radius of curvature R27 of the object side of the fourteenth lens and the radius of curvature R28 of the image side satisfy: 0.005 ≤ (R27 - R28) / (R27 + R28) ≤ 0.01.

[0010] Furthermore, the lens satisfies: 183 < TTL / CT1 < 216, where TTL is the total length of the lens in the main wavelength band; CT1 is the central thickness of the flat glass on the optical axis; 91 < TTL / CT2 < 108, where CT2 is the central thickness of the first lens on the optical axis; 50 < TTL / CT3 < 59, where CT3 is the central thickness of the second lens on the optical axis; 68 < TTL / CT4 < 81, where CT4 is the central thickness of the third lens on the optical axis; 50 < TTL / CT5 < 59, where CT5 is the central thickness of the fourth lens on the optical axis; 50 < TTL / CT6 < 59, where CT6 is the central thickness of the fifth lens on the optical axis; 55 < TTL / CT7 < 65, where CT7 is the central thickness of the sixth lens on the optical axis; 152 < TTL / CT8 < 180, where CT8 is the central thickness of the seventh lens on the optical axis; 152 < TTL / CT9 < 180, where CT9 is the central thickness of the eighth lens on the optical axis; 55 < TTL / CT10 < 65, where CT10 is the central thickness of the ninth lens on the optical axis; 50 < TTL / CT11 < 59, where CT11 is the central thickness of the tenth lens on the optical axis; 55 < TTL / CT12 < 65, where CT12 is the central thickness of the eleventh lens on the optical axis; 50 < TTL / CT13 < 59, where CT13 is the central thickness of the twelfth lens on the optical axis; 61 < TTL / CT14 < 72, where CT14 is the central thickness of the thirteenth lens on the optical axis; 50 < TTL / CT15 < 59, where CT15 is the central thickness of the fourteenth lens on the optical axis.

[0011] Furthermore, the lens satisfies: T0 = 0.49 mm, where T0 is the central distance from the object plane to the object side of the flat glass; 140 mm < T1 < 150 mm, where T1 is the central distance from the image side of the flat glass to the object side of the first lens; 1 mm < T2 < 1.8 mm, where T2 is the central distance from the image side of the first lens to the object side of the second lens; 2.5 mm < T3 < 3 mm, where T3 is the central distance from the image side of the second lens to the object side of the third lens; 35 mm < T4 < 38 mm, where T4 is the central distance from the image side of the third lens to the object side of the fourth lens; 12 mm < T5 < 15 m, where T5 is the central distance from the image side of the fourth lens to the object side of the fifth lens; 5 mm < T6 < 7 mm, where T6 is the central distance from the image side of the fifth lens to the object side of the sixth lens; 3 mm < T7 < 4 mm, where T7 is the central distance from the image side of the sixth lens to the object side of the seventh lens; 7mm < T8 < 9mm, where T8 is the central distance from the image side of the seventh lens to the diaphragm; 7mm < T9 < 9mm, where T9 is the central distance from the diaphragm to the object side of the eighth lens; 3mm < T10 < 4mm, where T10 is the central distance from the image side of the eighth lens to the object side of the ninth lens; 5mm < T11 < 7mm, where T11 is the central distance from the image side of the ninth lens to the object side of the tenth lens; 13mm < T12 < 14mm, where T12 is the central distance from the image side of the tenth lens to the object side of the eleventh lens; 50mm < T13 < 60mm, where T13 is the central distance from the image side of the eleventh lens to the object side of the twelfth lens; 0.5mm < T14 < 1.5mm, where T14 is the central distance from the image side of the twelfth lens to the object side of the thirteenth lens; 6mm < T15 < 7mm, where T15 is the central distance from the image side of the thirteenth lens to the object side of the fourteenth lens; 155mm < T16 < 165mm, where T16 is the central distance from the image side of the fourteenth lens to the exposure surface.

[0012] Furthermore, the lens adopts an ultraviolet wide spectrum with a working wavelength range of 350nm - 430nm, and the lens needs to withstand a laser power of 60W.

[0013] Furthermore, within the full field of view, the field curvature of the lens < 1 / 5 * FOV, the distortion < 0.001%, and the longitudinal chromatic aberration < 0.5μm, where FOV is the depth of focus of the lens in the main wavelength band.

[0014] The beneficial technical effects achieved by the present invention: The large numerical aperture hybrid direct writing lithography lens of the present invention is composed of a planar glass and 14 lenses, and has the advantages of an ultraviolet wide spectrum, a relatively large object-side numerical aperture, and a relatively small overall chromatic aberration. Reducing the working wavelength and increasing the numerical aperture at the same time can improve the lithography resolution, and a wide spectrum in the ultraviolet band can fully cover the PCB lithography process. The lens adopts a combination of I-line high-transmission glass materials, which can correct chromatic aberration well, and at the same time, the transmittance of the system is relatively high, and the ultraviolet laser radiation resistance performance is relatively good. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 is the optical path schematic diagram of the present invention; Figure 2 is the MTF curve graph of the optical transfer function of the present invention; Figure 3 is the standard spot diagram of the present invention; Figure 4It is a vertical axis chromatic aberration curve diagram of the present invention; Figure 5 is a field curvature and distortion diagram of the present invention; Figure 6 This is the through-focus MTF diagram of the present invention. DETAILED DESCRIPTION

[0016] The present invention will be further described below in conjunction with specific examples. The following examples are only used to more clearly illustrate the technical solutions of the present invention, and are not intended to limit the scope of protection of the present invention.

[0017] The present invention is further described below in conjunction with the accompanying drawings and embodiments.

[0018] like Figure 1 As shown, a large numerical aperture hybrid wave direct writing lithography lens of the present invention comprises a first lens group, a second lens group, an aperture, a third lens group and a fourth lens group. From the object side to the image side, the first lens group, the second lens group, the aperture, the third lens group and the fourth lens group are arranged in sequence along the axis direction of light; wherein from the object side to the image side, the first lens group comprises a flat glass 1, a first lens 2 with negative optical power, a second lens 3 with positive optical power, and a third lens 4 with positive optical power, which are arranged in sequence; the second lens group comprises a The first lens group includes a fourth lens 5 with negative optical power, a fifth lens 6 with positive optical power, a sixth lens 7 with positive optical power, and a seventh lens 8 with negative optical power; the third lens group includes an eighth lens 9 with negative optical power, a ninth lens 10 with positive optical power, a tenth lens 11 with positive optical power, and an eleventh lens 12 with negative optical power which are arranged in sequence; the fourth lens group includes a twelfth lens 13 with positive optical power, a thirteenth lens 14 with positive optical power, and a fourteenth lens 15 with positive optical power which are arranged in sequence; and the aperture stop is located between the seventh lens and the eighth lens.

[0019] The first lens, the second lens, the third lens, the fourth lens, the fifth lens, the sixth lens, the seventh lens, the eighth lens, the ninth lens, the tenth lens, the eleventh lens, the twelfth lens, the thirteenth lens and the fourteenth lens are all single lenses and are located on the same optical axis.

[0020] The object-side numerical aperture of the lens is NA, 0.1≤NA≤0.15, and the image-side numerical aperture is NA', 0.078≤NA'≤0.12; the lens conjugate distance is L, 550mm≤L≤650mm.

[0021] The lens magnification is β, β=1.27, and the magnification β=(image height / object height); The wavelength range value of the lens is 350nm ≤ λ ≤ 430nm, and the principal wavelength telecentricity of both the object side and the image side of the lens is less than 0.1; the lens satisfies the following relational expressions: 0.018 < f1 / f < 0.022; -0.034 < f2 / f < -0.03; -0.039 < f3 / f < -0.035; 0.024 < f4 / f < 0.028; where f is the focal length of the lens in the main wavelength band, f1 is the focal length of the first lens group in the main wavelength band, f2 is the focal length of the second lens group in the main wavelength band, f3 is the focal length of the third lens group in the main wavelength band, and f4 is the focal length of the fourth lens group in the main wavelength band. As a preferred embodiment, f = 3842.45mm, f1 = 78.977mm, f2 = -122.34mm, f3 = -142.22mm, f4 = 101.72mm.

[0022] In the full field of view range of the lens of the present application, the field curvature < 1 / 5 * FOV, the distortion < 0.001%, and the longitudinal chromatic aberration < 0.5μm, where FOV is the depth of focus of the lens in the main wavelength band.

[0023] Embodiment: Table 1 shows the parameters of the direct write lithography lens in this embodiment. The direct write lithography lens in the present invention uses an ultraviolet wide spectrum. As shown in Table 1, the working wavelength range is 350nm - 430nm, and the lens needs to withstand a laser power of 60W. The object-side numerical aperture is 0.12, the image-side numerical aperture is 0.095, and the conjugate distance is 600mm. The object-side field of view is 22mm, and the image-side field of view is 27.94mm. In the full field of view range, the field curvature is 28μm, the distortion is 0.0079%, and the longitudinal chromatic aberration is 0.16μm.

[0024] Table 1

[0025] The curvature radius of the object side and the image side of the flat glass are both ∞; 0.6≤(R1-R2) / (R1+R2)≤1; 1.9≤(R3-R4) / (R3+R4)≤2.3; -1≤(R5-R6) / (R5+R6)≤-0.6; 8≤(R7-R8) / (R7+R8)≤12; 2.3≤(R9-R10) / (R9+R10)≤2.7; -3.6≤(R11-R12) / (R11+R12)≤-3.2; 2.4≤(R13-R14) / (R13+R14)≤2.8; -2.8≤(R15-R16) / (R15+R16)≤-2.4 ; 3.1≤(R17-R18) / (R17+R18)≤3.5; 3.1≤(R19-R20) / (R19+R20)≤3.5; -105≤(R21-R22) / (R21+R22)≤-95; 0.5≤(R23-R24) / (R23+R24)≤1; 5.4≤(R25-R26) / (R25+R26)≤6; 0.005≤(R27-R28) / (R27+R28)≤0.01; Wherein, R1 is the radius of curvature of the object side of the first lens, R2 is the radius of curvature of the image side of the first lens; R3 is the radius of curvature of the object side of the second lens, R4 is the radius of curvature of the image side of the first lens is the radius of curvature of the image side surface of the second lens; R5 is the radius of curvature of the object side surface of the third lens, R6 is the radius of curvature of the image side surface of the third lens; R7 is the radius of curvature of the object side surface of the fourth lens, R8 is the radius of curvature of the image side surface of the fourth lens; R9 is the radius of curvature of the object side surface of the fifth lens, R10 is the radius of curvature of the image side surface of the fifth lens; R11 is the radius of curvature of the object side surface of the sixth lens, R12 is the radius of curvature of the image side surface of the sixth lens; R13 is the radius of curvature of the object side surface of the seventh lens, R14 is the radius of curvature of the image side surface of the seventh lens; R15 is the radius of curvature of the object side surface of the eighth lens, R16 is the radius of curvature of the image side surface of the eighth lens ; R17 is the curvature radius of the object side surface of the ninth lens, and R18 is the curvature radius of the image side surface of the ninth lens; R19 is the curvature radius of the object side surface of the tenth lens, and R20 is the curvature radius of the image side surface of the tenth lens; R21 is the curvature radius of the object side surface of the eleventh lens, and R22 is the curvature radius of the image side surface of the eleventh lens; R23 is the curvature radius of the object side surface of the twelfth lens, and R24 is the curvature radius of the image side surface of the twelfth lens; R25 is the curvature radius of the object side surface of the thirteenth lens, and R26 is the curvature radius of the image side surface of the thirteenth lens; R27 is the curvature radius of the object side surface of the fourteenth lens, and R28 is the curvature radius of the image side surface of the fourteenth lens.

[0026] Table 2

[0027] Table 2 shows the data of each surface of the lens of this embodiment. The curvature radius of the object side and the image side of the flat glass are both ∞ (infinity); R1=-568mm, R2=-63.5mm; R3=334.6mm, R4=-119.29mm; R5=78.762mm, R6=691.5mm; R7=-59.6mm, R8=49.456mm; R9=105.48mm, R10=-46.68mm; R11=44.06mm, R12=-81.19mm; R13=-85.9 4mm, R14=38.21mm; R15=-38.21mm, R16=85.94mm; R17=81.19mm, R18=-44.06mm; R19=46.68mm, R20=-105.48mm; R21=- 49.54mm, R22=50.76mm; R23=-478.44mm, R24=-84.8mm; R25=359.28mm, R26=-250.76mm; R27=63.76mm, R28=64.64mm.

[0028] In this embodiment, the first lens, the eleventh lens, the twelfth lens and the fourteenth lens are made of Corning quartz material (F_SILICA); the second lens and the fourth lens are made of H-K90GTI material; the third lens, the seventh lens and the eighth lens are made of QF50GTI material; the fifth lens, the sixth lens, the ninth lens and the tenth lens are made of calcium fluoride material (CAF2); and the thirteenth lens is made of F4GTI material.

[0029] TTL is the total length of the lens in the main wavelength band; CT1 is the central thickness of the flat glass on the optical axis, CT2 is the central thickness of the first lens on the optical axis, CT3 is the central thickness of the second lens on the optical axis, CT4 is the central thickness of the third lens on the optical axis, CT5 is the central thickness of the fourth lens on the optical axis, CT6 is the central thickness of the fifth lens on the optical axis, CT7 is the central thickness of the sixth lens on the optical axis, CT8 is the central thickness of the seventh lens on the optical axis, CT9 is the central thickness of the eighth lens on the optical axis; CT10 is the central thickness of the ninth lens on the optical axis, CT11 is the central thickness of the tenth lens on the optical axis, CT12 is the central thickness of the eleventh lens on the optical axis, CT13 is the central thickness of the twelfth lens on the optical axis, CT14 is the central thickness of the thirteenth lens on the optical axis, CT15 is the central thickness of the fourteenth lens on the optical axis. The value ranges are as follows: 183 < TTL / CT1 < 216; 91 < TTL / CT2 < 108; 50 < TTL / CT3 < 59; 68 < TTL / CT4 < 81; 50 < TTL / CT5 < 59; 50 < TTL / CT6 < 59; 55 < TTL / CT7 < 65; 152 < TTL / CT8 < 180; 152 < TTL / CT9 < 180; 55 < TTL / CT10 < 65; 50 < TTL / CT11 < 59; 55 < TTL / CT12 < 65; 50 < TTL / CT13 < 59; 61 < TTL / CT14 < 72; 50 < TTL / CT15 < 59; Among them, the specific values are as follows: CT1 = 3mm; CT2 = 5.8mm; CT3 = 11mm; CT4 = 8mm; CT5 = 11mm; CT6 = 11mm; CT7 = 10.2mm; CT8 = 3.6mm; CT9 = 3.6mm; CT10 = 10.2mm; CT11 = 11mm; CT12 = 10mm; CT13 = 10.8mm; CT14 = 8.8mm; CT15 = 11mm.

[0030] The value ranges of the central distances between the lenses are as follows: T0 = 0.49 mm; 140 mm < T1 < 150 mm; 1 mm < T2 < 1.8 mm; 2.5 mm < T3 < 3 mm; 35 mm < T4 < 38 mm; 12 mm < T5 < 15 m; 5 mm < T6 < 7 mm; 3 mm < T7 < 4 mm; 7 mm < T8 < 9 mm; 7 mm < T9 < 9 mm; 3 mm < T10 < 4 mm; 5 mm < T11 < 7 mm; 13 mm < T12 < 14 mm; 50 mm < T13 < 60 mm; 0.5 mm < T14 < 1.5 mm; 6 mm < T15 < 7 mm; 155 mm < T16 < 165 mm; where, T0 is the central distance from the object surface to the object side surface of the flat glass, T1 is the central distance from the image side surface of the flat glass to the object side surface of the first lens, T2 is the central distance from the image side surface of the first lens to the object side surface of the second lens, T3 is the central distance from the image side surface of the second lens to the object side surface of the third lens, T4 is the central distance from the image side surface of the third lens to the object side surface of the fourth lens, T5 is the central distance from the image side surface of the fourth lens to the object side surface of the fifth lens, T6 is the central distance from the image side surface of the fifth lens to the object side surface of the sixth lens, T7 is the central distance from the image side surface of the sixth lens to the object side surface of the seventh lens, T8 is the central distance from the image side surface of the seventh lens to the center of the aperture stop, T9 is the central distance from the aperture stop to the object side surface of the eighth lens, T10 is the central distance from the image side surface of the eighth lens to the object side surface of the ninth lens, T11 is the central distance from the image side surface of the ninth lens to the object side surface of the tenth lens, T12 is the central distance from the image side surface of the tenth lens to the object side surface of the eleventh lens, T13 is the central distance from the image side surface of the eleventh lens to the object side surface of the twelfth lens, T14 is the central distance from the image side surface of the twelfth lens to the object side surface of the thirteenth lens, T15 is the central distance from the image side surface of the thirteenth lens to the object side surface of the fourteenth lens, T16 is the central distance from the image side surface of the fourteenth lens to the exposure surface. The specific values are as follows: T0 = 0.49 mm; T1 = 141 mm; T2 = 1.61 mm; T3 = 2.78 mm; T4 = 36.97 mm; T5 = 13.26 mm; T6 = 6.08 mm; T7 = 3.47 mm; T8 = 8.17 mm; T9 = 8.17 mm; T10 = 3.47 mm; T11 = 6.08 mm; T12 = 13.36 mm; T13 = 58.5 mm; T14 = 1 mm; T15 = 6.46 mm; T16 = 160 mm.

[0031] Such as Figure 2As shown, in this embodiment, within the wavelength range of 350nm to 430nm, the meridian and sagittal MTF values ​​in the full field of view both reach the diffraction limit (the MTF curve of each field of view coincides with the diffraction limit curve), the modulation transfer function value at the cutoff frequency of 63lp / mm is better than 0.9, and the modulation transfer function curves of each field of view are very concentrated and have high resolution.

[0032] like Figure 3 As shown, the root mean square radius of the image point dispersion spot of each field of view of this embodiment is better than the Airy disk radius of 2.684 μm, the image point centroid is concentrated, and the detection accuracy is high.

[0033] like Figure 4 As shown, the vertical axis chromatic aberration of this embodiment does not exceed 2 μm at most in the full field of view, and the overall chromatic aberration is small in a wide spectral range.

[0034] like Figure 5 As shown, in this embodiment, the field curvature is less than 40μm within the full field of view, and the smaller field curvature is conducive to the lens obtaining a larger focal depth range; within the full field of view, the distortion is less than 0.01%, which can ensure good imaging quality of the system and small deformation of the processed graphics.

[0035] like Figure 6 As shown in the figure, at a spatial frequency of 30lp / mm, within the full field of view, the MTF value within the range of ±0.09mm is ≥0.5, that is, within the depth range of ±0.09mm, the imaging quality of the lens is very good, which means that the focal depth of the lens that meets the MTF requirement is ±0.09mm.

[0036] The present invention has been disclosed above with preferred embodiments, but they are not intended to limit the present invention. Any technical solutions obtained by adopting equivalent replacement or equivalent transformation solutions fall within the protection scope of the present invention.

Claims

1. A large numerical aperture hybrid wave direct writing lithography lens, characterized in that: The lens includes a first lens group, a second lens group, a diaphragm, a third lens group, and a fourth lens group arranged in sequence along the optical axis direction from the object side to the image side; The first lens group includes a flat glass, a first lens with a negative focal power, a second lens with a positive focal power, and a third lens with a positive focal power arranged in sequence; The second lens group includes a fourth lens with a negative focal power, a fifth lens with a positive focal power, a sixth lens with a positive focal power, and a seventh lens with a negative focal power arranged in sequence; The third lens group includes an eighth lens with a negative focal power, a ninth lens with a positive focal power, a tenth lens with a positive focal power, and an eleventh lens with a negative focal power arranged in sequence; The fourth lens group includes a twelfth lens with a positive focal power, a thirteenth lens with a positive focal power, and a fourteenth lens with a positive focal power arranged in sequence; The principal wavelength telecentricity of both the object side and the image side of the lens is less than 0.

1. The numerical aperture of the object side is NA, where 0.1 ≤ NA ≤ 0.15, and the numerical aperture of the image side is NA', where 0.078 ≤ NA' ≤ 0.

12. The conjugate distance of the lens is L, where 550 mm ≤ L ≤ 650 mm.

2. The large numerical aperture hybrid wave direct writing lithography lens according to claim 1, characterized in that: The lens satisfies the following relational expressions: 0.018 < f1 / f < 0.022; -0.034 < f2 / f < -0.03; -0.039 < f3 / f < -0.035; 0.024 < f4 / f < 0.028; where f is the focal length of the lens in the main wavelength band, f1 is the focal length of the first lens group in the main wavelength band, f2 is the focal length of the second lens group in the main wavelength band, f3 is the focal length of the third lens group in the main wavelength band, and f4 is the focal length of the fourth lens group in the main wavelength band.

3. The large numerical aperture hybrid wave direct writing lithography lens according to claim 2, characterized in that: f = 3842.45 mm, f1 = 78.977 mm, f2 = -122.34 mm, f3 = -142.22 mm, f4 = 101.72 mm.

4. The large numerical aperture hybrid wave direct writing lithography lens according to claim 1, characterized in that: The first lens to the fourteenth lens are all single lenses and are located on the same optical axis.

5. The large numerical aperture hybrid wave direct writing lithography lens according to claim 1, characterized in that: The magnification of the lens is β = 1.

27.

6. The large numerical aperture hybrid direct writing lithography lens according to claim 1, wherein: The curvature radii of both the object side and the image side of the flat glass are ∞; The curvature radius R1 of the object side surface and the curvature radius R2 of the image side surface of the first lens satisfy: 0.6 ≤ (R1 - R2) / (R1 + R2) ≤ 1; The curvature radius R3 of the object side surface and the curvature radius R4 of the image side surface of the second lens satisfy: 1.9 ≤ (R3 - R4) / (R3 + R4) ≤ 2.3; The curvature radius R5 of the object side surface and the curvature radius R6 of the image side surface of the third lens satisfy: -1 ≤ (R5 - R6) / (R5 + R6) ≤ -0.6; The curvature radius R7 of the object side surface and the curvature radius R8 of the image side surface of the fourth lens satisfy: 8 ≤ (R7 - R8) / (R7 + R8) ≤ 12; The curvature radius R9 of the object side surface and the curvature radius R10 of the image side surface of the fifth lens satisfy: 2.3 ≤ (R9 - R10) / (R9 + R10) ≤ 2.7; The radius of curvature R11 of the object side of the sixth lens and the radius of curvature R12 of the image side satisfy: -3.6 ≤ (R11 - R12) / (R11 + R12) ≤ -3.2; The radius of curvature R13 of the object side of the seventh lens and the radius of curvature R14 of the image side satisfy: 2.4 ≤ (R13 - R14) / (R13 + R14) ≤ 2.8; The radius of curvature R15 of the object side of the eighth lens and the radius of curvature R16 of the image side satisfy: -2.8 ≤ (R15 - R16) / (R15 + R16) ≤ -2.4; The radius of curvature R17 of the object side of the ninth lens and the radius of curvature R18 of the image side satisfy: 3.1 ≤ (R17 - R18) / (R17 + R18) ≤ 3.5; The radius of curvature R19 of the object side of the tenth lens and the radius of curvature R20 of the image side satisfy: 3.1 ≤ (R19 - R20) / (R19 + R20) ≤ 3.5; The radius of curvature R21 of the object side of the eleventh lens and the radius of curvature R22 of the image side satisfy: -105 ≤ (R21 - R22) / (R21 + R22) ≤ -95; The radius of curvature R23 of the object side of the twelfth lens and the radius of curvature R24 of the image side satisfy: 0.5 ≤ (R23 - R24) / (R23 + R24) ≤ 1; The radius of curvature R25 of the object side of the thirteenth lens and the radius of curvature R26 of the image side satisfy: 5.4 ≤ (R25 - R26) / (R25 + R26) ≤ 6; The radius of curvature R27 of the object side of the fourteenth lens and the radius of curvature R28 of the image side satisfy: 0.005 ≤ (R27 - R28) / (R27 + R28) ≤ 0.

01.

7. The large numerical aperture hybrid wave direct writing lithography lens according to claim 1, characterized in that: The lens satisfies: 183 < TTL / CT1 < 216, where TTL is the total length of the lens in the main wavelength band; CT1 is the central thickness of the flat glass on the optical axis; 91 < TTL / CT2 < 108, where CT2 is the central thickness of the first lens on the optical axis; 50 < TTL / CT3 < 59, where CT3 is the central thickness of the second lens on the optical axis; 68 < TTL / CT4 < 81, where CT4 is the central thickness of the third lens on the optical axis; 50 < TTL / CT5 < 59, where CT5 is the central thickness of the fourth lens on the optical axis; 50 < TTL / CT6 < 59, where CT6 is the central thickness of the fifth lens on the optical axis; 55 < TTL / CT7 < 65, where CT7 is the central thickness of the sixth lens on the optical axis; 152 < TTL / CT8 < 180, where CT8 is the central thickness of the seventh lens on the optical axis; 152 < TTL / CT9 < 180, where CT9 is the central thickness of the eighth lens on the optical axis; 55 < TTL / CT10 < 65, where CT10 is the central thickness of the ninth lens on the optical axis; 50 < TTL / CT11 < 59, where CT11 is the central thickness of the tenth lens on the optical axis; 55 < TTL / CT12 < 65, where CT12 is the central thickness of the eleventh lens on the optical axis; 50 < TTL / CT13 < 59, where CT13 is the central thickness of the twelfth lens on the optical axis; 61 < TTL / CT14 < 72, where CT14 is the central thickness of the thirteenth lens on the optical axis; 50 < TTL / CT15 < 59, where CT15 is the central thickness of the fourteenth lens on the optical axis.

8. The large numerical aperture hybrid wave direct writing lithography lens according to claim 1, characterized in that: The lens satisfies: T0 = 0.49 mm, where T0 is the central distance from the object plane to the object side of the flat glass; 140 mm < T1 < 150 mm, where T1 is the central distance from the image side of the flat glass to the object side of the first lens; 1 mm < T2 < 1.8 mm, where T2 is the central distance from the image side of the first lens to the object side of the second lens; 2.5 mm < T3 < 3 mm, where T3 is the central distance from the image side of the second lens to the object side of the third lens; 35 mm < T4 < 38 mm, where T4 is the central distance from the image side of the third lens to the object side of the fourth lens; 12 mm < T5 < 15 m, where T5 is the central distance from the image side of the fourth lens to the object side of the fifth lens; 5 mm < T6 < 7 mm, where T6 is the central distance from the image side of the fifth lens to the object side of the sixth lens; 3 mm < T7 < 4 mm, where T7 is the central distance from the image side of the sixth lens to the object side of the seventh lens; 7 mm < T8 < 9 mm, where T8 is the central distance from the image side of the seventh lens to the center of the aperture; 7 mm < T9 < 9 mm, where T9 is the central distance from the aperture to the object side of the eighth lens; 3 mm < T10 < 4 mm, where T10 is the central distance from the image side of the eighth lens to the object side of the ninth lens; 5 mm < T11 < 7 mm, where T11 is the central distance from the image side of the ninth lens to the object side of the tenth lens; 13 mm < T12 < 14 mm, where T12 is the central distance from the image side of the tenth lens to the object side of the eleventh lens; 50 mm < T13 < 60 mm, where T13 is the central distance from the image side of the eleventh lens to the object side of the twelfth lens; 0.5 mm < T14 < 1.5 mm, where T14 is the central distance from the image side of the twelfth lens to the object side of the thirteenth lens; 6 mm < T15 < 7 mm, where T15 is the central distance from the image side of the thirteenth lens to the object side of the fourteenth lens; 155 mm < T16 < 165 mm, where T16 is the central distance from the image side of the fourteenth lens to the exposure plane.

9. The large numerical aperture hybrid wave direct writing lithography lens according to claim 1, characterized in that: The lens uses an ultraviolet wide spectrum, with a working wavelength range of 350 nm - 430 nm, and the lens needs to withstand a laser power of 60 W.

10. The large numerical aperture hybrid wave direct writing lithography lens according to claim 1, characterized in that: Within the full field of view, the field curvature of the lens < 1 / 5 * FOV, the distortion < 0.001%, and the longitudinal chromatic aberration < 0.5 μm, where FOV is the depth of focus of the lens in the main wavelength band.

Citation Information

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