Electronic device

Abstract

The invention discloses an electronic device. The electronic device comprises a first substrate, a second substrate, a sensing unit, a first light shielding layer and a second light shielding layer, the second substrate is overlapped with the first substrate, wherein the second substrate comprises a first side and a second side opposite to the first side. The sensing unit is arranged between the first substrate and the second substrate, wherein the second side of the second substrate is located between the sensing unit and the first side of the second substrate. The first shading layer is arranged on the first side of the second substrate and is provided with a first opening. The second light shielding layer is arranged on the sensing unit, and the second light shielding layer is provided with a second opening. Wherein the first opening overlaps the second opening in a plan view direction of the electronic device.

Description

[0001] This application is a divisional application of the invention patent application with the application date of September 12, 2019, application number 201910863636.1, and invention name “Electronic device and method for fingerprint recognition using an electronic device”. Technical Field

[0002] The present invention relates to an electronic device and a method for fingerprint identification using the electronic device, and in particular to an electronic device capable of improving a signal-to-noise ratio and a related fingerprint identification method. Background Art

[0003] In recent years, with the advancement of technology, information products, for example, have fingerprint recognition functions to protect user data. However, ambient light and the light generated by the information product itself may affect the accuracy of fingerprint recognition, so how to improve the fingerprint recognition effect of information products is still an issue that the industry needs to continue to work on. Summary of the invention

[0004] One of the purposes of the present invention is to provide an electronic device and a method for fingerprint recognition using the electronic device. Since the electronic device includes a light shielding layer, the noise light entering the sensing unit can be reduced, the signal-to-noise ratio can be improved, and the fingerprint recognition effect can be improved.

[0005] One embodiment of the present invention provides an electronic device, which includes a first substrate, a second substrate, a sensing unit, a first light shielding layer and a second light shielding layer. The second substrate overlaps with the first substrate, wherein the second substrate includes a first side and a second side relative to the first side. The sensing unit is arranged between the first substrate and the second substrate, wherein the second side of the second substrate is located between the sensing unit and the first side of the second substrate. The first light shielding layer is arranged on the first side of the second substrate and has a first opening. The second light shielding layer is arranged on the sensing unit, and the second light shielding layer has a second opening. Wherein in the top view direction of the electronic device, the first opening overlaps with the second opening.

[0006] An embodiment of the present invention provides an electronic device, which includes a first substrate, a second substrate, a sensing unit, a first light shielding layer and a second light shielding layer. The second substrate overlaps with the first substrate, wherein the second substrate includes a first side and a second side relative to the first side. The sensing unit is disposed between the first substrate and the second substrate, wherein the second side of the second substrate is located between the sensing unit and the first side of the second substrate. The first light shielding layer is disposed on the first side of the second substrate and has a first opening, the second light shielding layer is disposed on the sensing unit, and the second light shielding layer has a second opening, wherein the width of the first opening is smaller than the width of the second opening. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1FIG. 4 is a cross-sectional schematic diagram of a first embodiment of an electronic device according to the present invention.

[0008] Figure 2 for Figure 1 A schematic top view of a first substrate of an electronic device is shown.

[0009] Figure 3 for Figure 1 A schematic top view of a second substrate of the electronic device is shown.

[0010] Figure 4 for Figure 1 A partial enlarged schematic cross-sectional view of the electronic device is shown.

[0011] Figure 5 It is a partial cross-sectional enlarged schematic diagram of the second embodiment and a variant embodiment of the electronic device of the present invention.

[0012] Figure 6 It is a partial cross-sectional enlarged schematic diagram of the third embodiment and a variant embodiment of the electronic device of the present invention.

[0013] Figure 7 It is a partial cross-sectional enlarged schematic diagram of the fourth embodiment and a variant embodiment of the electronic device of the present invention.

[0014] Figure 8 It is a partial enlarged cross-sectional schematic diagram of a fifth embodiment of the electronic device of the present invention.

[0015] Fig. 9 It is a partial cross-sectional enlarged schematic diagram of a variation of the fifth embodiment of the electronic device of the present invention.

[0016] Fig.10 It is a partial cross-sectional enlarged schematic diagram of the sixth embodiment and a variant embodiment of the electronic device of the present invention.

[0017] Fig.11 It is a partial enlarged cross-sectional schematic diagram of a seventh embodiment of the electronic device of the present invention.

[0018] Fig.12 It is a partial cross-sectional enlarged schematic diagram of a first variation embodiment of the seventh embodiment of the electronic device of the present invention.

[0019] Fig.13 It is a partial cross-sectional enlarged schematic diagram of a second variation embodiment of the seventh embodiment of the electronic device of the present invention.

[0020] Fig.14 It is a partial cross-sectional enlarged schematic diagram of a third variation embodiment of the seventh embodiment of the electronic device of the present invention.

[0021] Fig.15 It is a partial cross-sectional enlarged schematic diagram of a fourth variation embodiment of the seventh embodiment of the electronic device of the present invention.

[0022] Fig.16 It is a partial cross-sectional enlarged schematic diagram of a fifth variation embodiment of the seventh embodiment of the electronic device of the present invention.

[0023] Fig.17 It is a partial enlarged cross-sectional schematic diagram of an eighth embodiment of the electronic device of the present invention.

[0024] Fig.18 It is a partial cross-sectional enlarged schematic diagram of a variation of the eighth embodiment of the electronic device of the present invention.

[0025] Fig.19 It is a partial enlarged cross-sectional schematic diagram of a ninth embodiment of the electronic device of the present invention.

[0026] Fig. 20 A signal diagram of an embodiment of a method for performing fingerprint recognition on an electronic device according to the present invention.

[0027] Fig.21 FIG. 4 is a schematic diagram of the appearance of an electronic device according to an embodiment of the present invention.

[0028] Fig. 22 FIG. 1 is a flow chart of an embodiment of a fingerprint identification method for an electronic device according to the present invention.

[0029] Explanation of reference numerals: 100-electronic device; 100d-display surface; 102-sub-pixel; 1021, 1022-pixel; 104-light conversion element; 106-driving transistor; 108-reading transistor; 110-sensor; 1101-upper electrode; 1103-lower electrode; 122-buffer layer; 124-gate insulating layer; 128-protective layer; 130, 176-planar layer; 132-bias line; 150-first buffer layer; 152-second buffer layer; 154-gate insulating layer; 156, 158, 160, 120, 126, 180-insulating layer; 162-thin film transistor; 162C, 108C, 1102-semiconductor layer; 162D, 108D-drain; 162G, 108G-gate; 162S, 108S-source; 164-light blocking layer; 166-refractive index adjustment material; 168, LB21-opening; 174-adhesive layer; 200-viewing side; BLU-backlight module ; CG-cover plate; COE-shared electrode; DL-data line; DML-display medium layer; DPU-display unit; DZ, DY, DX-direction; FGR-finger; FRM-frame; L2, L1-light; LB1-first light shielding layer; LB2-second light shielding layer; LB3-third light shielding layer; LBD-dashed frame; LEN-lens; LSL-light blocking layer; LSR-light source; OP, OP1, OP2-opening; OPS-side wall; PI1-first Alignment layer; PI2-second alignment layer; PXE-pixel electrode; R1-display area; R2-fingerprint recognition area; S100~S108-steps; SL-scanning line; SPU-signal processing unit; SSE, SSE1, SSE2-sensing elements; SSU-sensing unit; SUB1-first substrate; SUB11, SUB22-upper surface; SUB12, SUB21-lower surface; SUB2-second substrate; TFT-switching element; USR-user. DETAILED DESCRIPTION

[0030] The present invention is described in detail below in conjunction with specific embodiments and drawings. It should be noted that in order to make it easier for readers to understand and the drawings are concise, the multiple drawings in the present invention only depict a portion of the device, and the specific elements in the drawings are not drawn according to the actual scale. In addition, the number and size of each element in the drawing are only for illustration and are not intended to limit the scope of the present invention.

[0031] Certain words are used throughout the specification and claims of the present invention to refer to specific elements. It should be understood by those skilled in the art that electronic equipment manufacturers may refer to the same element by different names. It is not intended to distinguish between elements that have the same function but different names. In the following specification and claims, the words "containing" and "including" are open words, so they should be interpreted as "containing but not limited to...". When the terms "including", "including" and / or "having" are used in this specification, they specify the presence of the features, areas, steps, operations and / or elements, but do not exclude the presence or addition of one or more other features, areas, steps, operations, elements and / or combinations thereof. When an element or layer is referred to as being "on" or "connected to" another element or layer, it can be directly on or directly connected to this other element or layer, or there can be an intervening element or layer between the two. Conversely, when an element is referred to as being "directly" "on" or "directly connected to" another element or layer, there can be no intervening element or layer between the two.

[0032] Although terms such as "first", "second", "third", etc. may be used to describe or name different components, these components are not limited to these terms. These terms are only used to distinguish one component from other components in the specification and have nothing to do with the order in which these components are manufactured. The same terms may not be used in the claims, and may be replaced by "first", "second", "third", etc. according to the order in which the elements are declared in the claims. Accordingly, in the following description, the first component may be the second component in the claims.

[0033] It should be understood that the features of several different embodiments may be replaced, reorganized, or mixed to complete other embodiments without departing from the spirit of the present invention.

[0034] Please refer to Figures 1 to 4 ,in Figure 1 is a cross-sectional schematic diagram of a first embodiment of an electronic device of the present invention, Figure 2 for Figure 1 A schematic top view of a first substrate of the electronic device shown, Figure 3 for Figure 1 A schematic top view of a second substrate of the electronic device shown, Figure 4 for Figure 1 The partial cross-sectional enlarged schematic diagram of the electronic device shown in FIG. Figure 2 and Figure 3 The cross-sectional structure of line segment A-A' and line segment B-B'. Figure 1 As shown, the electronic device 100 of the first embodiment of the present invention can be viewed from a viewing side 200, that is, the surface of the electronic device 100 closest to the viewing side 200 ( Figure 1 The top surface of the electronic device 100 in the figure can be regarded as the display surface 100d of the electronic device 100. The user USR can watch the display surface 100d of the electronic device 100 from the viewing side 200 to enjoy the image or picture displayed by the electronic device 100. The direction DZ indicates the direction in which the display surface 100d faces the user USR. Figure 1 In the figure, the display surface 100d is located on the side of the electronic device 100 closest to the user USR. Those skilled in the art should easily understand that the display surface 100d can face different directions depending on the setting location or application environment of the electronic device 100.

[0035] The electronic device 100 includes a first substrate SUB1, a second substrate SUB2, a display unit DPU and a sensor unit SSU, wherein the second substrate SUB2 is disposed between the first substrate SUB1 and the viewing side 200, and the display unit DPU is disposed between the first substrate SUB1 and the second substrate SUB2, for example, formed on the upper surface SUB11 of the first substrate SUB1. The display unit DPU can be used to control the display medium layer DML. It should be noted that Figure 1 Although the display unit DPU is represented by one layer, the display unit DPU may include (but not limited to) multiple film layers, multiple switch elements and multiple wirings, and these switch elements and wirings may be respectively arranged in different film layers of the display unit DPU.

[0036] The sensing unit SSU is disposed between the first substrate SUB1 and the second substrate SUB2. In some embodiments, the sensing unit SSU may be disposed on the second substrate SUB2, that is, the sensing unit SSU is disposed on the surface of the second substrate SUB2 or at a position close to the surface of the second substrate SUB2, for example, on the lower surface SUB21 of the second substrate SUB2. Figure 1 In other embodiments, the sensing unit SSU may be disposed on the upper surface SUB22 of the second substrate SUB2. It should be noted that Figure 1 Although the sensing unit SSU is represented as one layer, the sensing unit SSU may include (but is not limited to) multiple film layers, multiple sensing elements, driving elements and / or reading elements, and these elements may be respectively disposed in different film layers.

[0037] Furthermore, the electronic device 100 further includes a first light shielding layer LB1, which is disposed between the sensing unit SSU and the viewing side 200 and can be disposed on the surface of the second substrate SUB2. For example, the first light shielding layer LB1 can be disposed on the lower surface SUB21 of the second substrate SUB2. Figure 1In other variant embodiments, the first light shielding layer LB1 may be disposed on the upper surface SUB22 of the second substrate SUB2, that is, the second substrate SUB2 is located between the first light shielding layer LB1 and the sensing unit SSU, but the present invention is not limited thereto.

[0038] Figure 1 The electronic device 100 shown is a liquid crystal display device, which may include a light emitting unit, a backlight module BLU and a display medium layer DML, wherein the backlight module BLU is located on the side of the first substrate SUB1 opposite to the second substrate SUB2, that is, the first substrate SUB1 is located between the second substrate SUB2 and the backlight module BLU. Figure 1 In the embodiment, the backlight module BLU is adjacent to the lower surface SUB12 of the first substrate SUB1. Figure 1 In the electronic device shown, the display medium layer DML may be a liquid crystal layer, but is not limited thereto. In some embodiments, the display medium layer DML may include an organic light emitting diode (OLED), an inorganic light emitting diode (LED), such as a micro light-emitting diode (micro LED) or a sub-millimeter light emitting diode (mini LED), a quantum dot light-emitting diode (QLED / QDLED), plasma, quantum dots, fluorescent materials, phosphorescent materials, other suitable materials or combinations of the above materials, but is not limited thereto. It should be noted that when the display medium layer DML of the electronic device 100 is a self-luminous material, the backlight module BLU can be omitted.

[0039] The electronic device 100 of the present invention may include a display device, a splicing device, a light-emitting device, a sensing device, an antenna device, other suitable devices or a combination of the above devices, but is not limited thereto. The splicing device may be, for example, a plurality of displays spliced ​​together, or a display and other devices such as an antenna device and a sensing device spliced ​​together, but is not limited thereto. When the electronic device 100 is not a display, the display unit DPU may be changed to a circuit array unit, and the display medium layer DML may be omitted. Furthermore, the electronic device 100 of the present invention may be a curved electronic device or a bendable electronic device, wherein a bendable electronic device means an electronic device that can be bent, bent, folded, stretched, flexed or otherwise similarly deformed. In other words, during operation, the electronic device may have a curved surface or be in a bent state, the electronic device may have a fixed curved shape, or have different bending states depending on usage requirements. According to different application requirements, the first substrate SUB1 and the second substrate SUB2 of the electronic device 100 may include corresponding materials, such as a hard substrate or a soft flexible substrate. Examples of hard substrates include glass substrates, quartz substrates, or sapphire substrates. Examples of soft flexible substrates include polyimide (PI) substrates, polycarbonate (PC) substrates, or polyethylene terephthalate (PET) substrates and other flexible substrates, but are not limited to these.

[0040] Please refer to Figure 2 and Figure 4 ,in Figure 4 The backlight module BLU is omitted. A display unit DPU may be disposed on the surface SUB11 of the first substrate SUB1. The display unit DPU may include a plurality of data lines DL and a plurality of scan lines SL, wherein the data lines DL may extend along a direction DY, and the scan lines SL may extend along a direction DX, and the extension directions of the two are different. The data lines DL and the scan lines SL may be interlaced with each other and may roughly define a plurality of sub-pixels 102 (for example, the area between the data lines DL and the scan lines SL). The sub-pixels 102 may respectively have corresponding switching elements TFT, and the switching elements TFT may be electrically connected to the corresponding data lines DL, the scan lines SL, and the pixel electrodes PXE (shown in FIG. Figure 4 ) to control the state of sub-pixel 102.

[0041] Please refer to Figure 4In the present invention, the switch element TFT may be, for example, a thin film transistor 162. The thin film transistor 162 may include a gate 162G, a source 162S, a drain 162D, a semiconductor layer 162C, and a gate insulating layer 154. The gate 162G may be electrically connected to the scan line SL, the source 162S may be electrically connected to the data line DL, and the drain 162D may be electrically connected to the pixel electrode PXE. The semiconductor layer 162C may include a low temperature polysilicon (LTPS) material, a metal oxide (Metal Oxide) material, or other suitable semiconductor materials. Different thin film transistors 162 may include semiconductor layers 162C of different materials, but are not limited thereto. The gate 162G and the scan line SL may be formed of a first metal layer, the source 162S, the drain 162D, and the data line DL may be formed of a second metal layer, and the pixel electrode PXE may include a first transparent conductive layer. A common electrode COE may be disposed on the pixel electrode PXE, and the pixel electrode PXE and the common electrode COE may be isolated by an insulating layer 160, and the common electrode COE may include a second transparent conductive layer. A light blocking layer 164 may also be disposed on the upper surface SUB11 of the first substrate SUB1, which is located between the semiconductor layer 162C and the first substrate SUB1, and the light blocking layer 164 includes an opaque material, such as a metal material, but is not limited thereto. The display unit DPU may also include a first buffer layer 150, a second buffer layer 152, an insulating layer 156 and an insulating layer 158. The first buffer layer 150 may be disposed between the light blocking layer 164 and the first substrate SUB1, and the second buffer layer 152 may be disposed between the light blocking layer 164 and the semiconductor layer 162C, wherein the insulating layer 156 and the insulating layer 158 cover the gate 162G, and the insulating layer 158 may be located between the pixel electrode PXE and the source 162S. It should be noted that the display unit DPU may also include other components and wires, not limited to Figure 4 The content shown, and Figures 2 to 4 The structure shown is only an example, and the structure of the electronic device of the present invention is not limited thereto.

[0042] Please refer to Figure 3 and Figure 4, a first light shielding layer LB1 and a sensing unit SSU may be disposed on the surface of the second substrate SUB2. The sensing unit SSU is disposed between the second substrate SUB2 and the display unit DPU, and may include a plurality of sensing elements SSE, and the plurality of sensing elements SSE may respectively include a driving transistor 106, a reading transistor 108 and a sensor 110, but not limited thereto. For example, a sensing element SSE may include only a sensor 110 and a transistor. The driving transistor 106 and the reading transistor 108 may respectively include thin film transistors, which are electrically connected to each other and further electrically connected to the corresponding sensor 110, but not limited thereto. For example, the reading transistor 108 may include a gate 108G, a source 108S, a drain 108D, a semiconductor layer 108C and a gate insulating layer 124. The driving transistor 106 may have a similar structure, and the materials of each film layer thereof may refer to the aforementioned thin film transistor 162, which will not be described in detail here. It should be noted that the position of the driving transistor 106 or the reading transistor 108 does not necessarily correspond to the position of the switching element TFT of the sub-pixel. The sensor 110 can be, for example, a PIN semiconductor sensor, for example, including an upper electrode 1101, a semiconductor layer 1102 and a lower electrode 1103, wherein the semiconductor layer 1102 may include an N-type semiconductor layer, an intrinsic semiconductor layer or a P-type semiconductor layer, and the upper electrode 1101 and the lower electrode 1103 may include a transparent conductive layer and / or an opaque conductive layer, such as a metal material, but the structure and material of the sensor 110 of the present invention are not limited to the above. In some embodiments, the upper electrode 1101 may be electrically connected to the reading transistor 108, and the lower electrode 1103 may be electrically connected to the bias line 132. The first light shielding layer LB1 may be disposed on the lower surface SUB21 of the second substrate SUB2, that is, between the second substrate SUB2 and the sensing unit SSU. In the top view direction of the electronic device 100, the first light shielding layer LB1 covers at least a portion of the sensing element SSE, that is, in the direction DZ, the first light shielding layer LB1 at least partially overlaps the sensor 110, the read transistor 108 and / or the drive transistor 106. In some embodiments, the direction DZ may be the normal direction of the second substrate SUB2. The first light shielding layer LB1 may include an organic or inorganic dark film layer, such as an organic pigment layer or a metal layer such as a black matrix (BM) layer. In the direction DZ, the first light shielding layer LB1 shields the elements of the sensing element SSE, making it difficult to find the sensing element SSE from the viewing side 200, and can also reduce the reflected light on the surface of the display surface 100d, so that the electronic device 100 can have a better visual effect on the display surface 100d.On the other hand, the material of the first light shielding layer LB1 can block more than 70% of visible light, thereby reducing the total amount of ambient light entering the sensor 110, thereby reducing the generated background noise, improving the signal to noise ratio (S / N ratio) or improving the sensing accuracy. In some embodiments, the electronic device 100 further includes a second light shielding layer LB2, which is disposed between the sensing unit SSU and the display medium layer DML. In some embodiments, the second light shielding layer LB2 of the electronic device 100 is disposed between the sensing unit SSU and the display unit DPU. In some embodiments, the second light shielding layer LB2 may be coated on the periphery of the sensor 110, for example, covering the side wall, bottom surface and / or bias line 132 of the sensor 110. The second light shielding layer LB2 can reduce the noise caused by direct or scattered light (for example, light emitted from the backlight module BLU or light reflected from nearby sub-pixels) incident on the sensor 110 from the side or back, thereby improving the sensing accuracy. The material of the second light shielding layer LB2 may be the same as or different from the material of the first light shielding layer LB1, which will not be repeated here. The lower surface SUB21 of the second substrate SUB2 may also be selectively provided with an insulating layer 120, a buffer layer 122, an insulating layer 126, a protective layer 128 and a flat layer 130. The insulating layer 120 and the flat layer 130 may include a protective coating (overcoating layer) material, for example, an organic material, wherein the flat layer 130 covers the lower surface SUB21 of the second substrate SUB2, that is, covers the sensor 110 and the second light shielding layer LB2. The protective layer 128 can be used as a passivation layer (passivation layer). The above layers may respectively include organic or inorganic insulating materials, such as an oxide layer or a nitride layer, but are not limited thereto. The sensing unit SSU of the present invention can be used for fingerprint recognition. When the user's finger touches or approaches the display surface 100d, it can reflect light. After the reflected light enters the sensor 110, a photoelectric signal can be generated, and the fingerprint recognition data can be obtained after being processed and analyzed by the computing unit. It should be noted that although the present invention takes fingerprint recognition as an example, the function of the sensing unit SSU is not limited to fingerprint recognition.

[0043] The surface SUB21 of the second substrate SUB2 may be provided with a light conversion layer, and the light conversion layer may include a plurality of light conversion elements 104, which are arranged in the openings of the patterned first light shielding layer LB1. When the electronic device 100 includes a liquid crystal display panel, the light conversion element 104 may be a color filter layer, Figure 3The symbols "R", "G", and "B" represent the red filter layer, the green filter layer, and the blue filter layer, respectively. The three are arranged in sequence and correspond to a sub-pixel 102, and three sub-pixels 102 can form a pixel. However, the color of the color filter layer is not limited to the above, and the number of sub-pixels 102 constituting a pixel is not limited to three, and the arrangement of the sub-pixels 102 is not limited to Figure 3 Furthermore, Figure 3 Although it is shown that a sensing element SSE is disposed next to a pixel, the present invention does not limit the number of pixels corresponding to the sensing element SSE. In other words, in some embodiments, not every pixel is equipped with a set of sensing elements SSE.

[0044] The electronic device of the present invention is not limited to the above-mentioned embodiments. Other embodiments or variations of the present invention will be disclosed below. However, in order to simplify the description and highlight the differences between the embodiments or variations, the same reference numerals are used to mark the same elements below, and the repeated parts will not be repeated. In addition, the materials and thicknesses of each layer and the conditions of the process steps in the subsequent embodiments of the present invention can all refer to the first embodiment, so they will not be repeated.

[0045] Please refer to Figure 5 , Figure 5 The second embodiment and the partial cross-sectional enlarged schematic diagram of the electronic device of the present invention are mainly depicted. The second substrate SUB2, the first light shielding layer LB1 and the sensing unit SSU are mainly depicted. Most of the other layers are omitted. The configuration of other layers can be referred to Figure 4 . Follow-up Figures 6 to 9 There are similar omissions, which I will not go into here. Figure 5 Example (I) shows that the first light shielding layer LB1 can be disposed on the upper surface SUB22 of the second substrate SUB2, and the sensing unit SSU is disposed on the lower surface SUB21 of the second substrate SUB2. In other words, the second substrate SUB is disposed between the sensing unit SSU and the first light shielding layer LB1, or the first light shielding layer LB1 is disposed between the second substrate SUB2 and the viewing side 200. Figure 5 Example (II) shows that both the first light shielding layer LB1 and the sensing unit SSU are disposed on the upper surface SUB22 of the second substrate SUB2, and the sensing unit SSU may be located between the first light shielding layer LB1 and the second substrate SUB2. Figure 5In the illustrated embodiment, the first light shielding layer LB1 is located between the sensing unit SSU and the viewing side 200, that is, the first light shielding layer LB1 is located between the sensing unit SSU and the user USR, and the first light shielding layer LB1 is closer to the display surface 100d of the electronic device 100 than the sensing unit SSU. The above design can reduce most of the background ambient light from the viewing side 200 entering the sensing unit SSU, so as to improve the signal-to-noise ratio of the sensing unit SSU when sensing. The relative configuration position of the sensing unit SSU and the first light shielding layer LB1 can be applied in various embodiments of the present invention, and will not be repeated below.

[0046] exist Figure 5 In the illustrated embodiment, the second light shielding layer LB2 is not illustrated, but in some embodiments, the second light shielding layer LB2 may be disposed corresponding to the sensing unit SSU, for example, disposed on the back side of the sensing unit SSU. Figure 6 shown.

[0047] Please refer to Figure 6 , Figure 6 It is a partial cross-sectional enlarged schematic diagram of the third embodiment and the variant embodiment of the electronic device of the present invention, which mainly illustrates the configuration positions of the second substrate SUB2, the first light shielding layer LB1, the second light shielding layer LB2 and the sensing unit SSU, and omits most of the other layers. Figure 6 Example (I) illustrates that the second substrate SUB2 is located between the first shading layer LB1 and the sensing unit SSU, and the sensing unit SSU may be covered by the second shading layer LB2. For example, the back side and side edges of the sensor 110 in the sensing element SSE of the sensing unit SSU may be covered by the second shading layer LB2, but is not limited thereto. Figure 6 Example (II) shows that the sensing unit SSU is located between the first light shielding layer LB1 and the second substrate SUB2, and the second light shielding layer LB2 and the sensing unit SSU are located on different sides of the second substrate SUB2. From the back side, the second light shielding layer LB2 at least partially shields the back side of the sensor 110. For example, the sensor 110 has a smaller size or width than the corresponding second light shielding layer LB2 to reduce the proportion of light entering the sensor 110 from the back side of the sensor 110. It should be noted that in this embodiment, the configuration positions of the first light shielding layer LB1, the second light shielding layer LB2 and the sensing unit SSU are not based on Figure 6 In addition, in some embodiments, the second light shielding layer LB2 may be a light shielding layer corresponding to a plurality of sensors 110 after being patterned, and in other embodiments, the second light shielding layer LB2 may be a large-area film layer covering most of the surface of the second substrate SUB2.

[0048] Please refer to Figure 7 , Figure 7This is a partial cross-sectional enlarged schematic diagram of the fourth embodiment and variant embodiment of the electronic device of the present invention, which mainly depicts the configuration positions of the first light shielding layer LB1, the second light shielding layer LB2 and the sensing unit SSU on the surface of the second substrate SUB2, and omits most of the other films. Figure 7 In example (I), the first light shielding layer LB1 is located on the lower surface of the second substrate SUB2, that is, between the sensor 110 and the second substrate SUB2. The first light shielding layer LB1 also includes an opening OP to expose a portion of the sensor 110. In other words, in the top view direction of the electronic device 100, the opening OP overlaps at least a portion of the sensing unit SSU. Figure 7 The size (or width) of the opening OP shown may be smaller than the size (or width) of the sensor 110, but is not limited thereto, and the opening OP may be designed in different shapes or sizes as needed. When fingerprint recognition is performed, the light reflected by the finger from one side of the display surface 100d may be incident on the sensor 110 through the opening OP, thereby increasing the total amount of reflected light incident on the sensor 110. In addition, example (I) illustrates that the second light shielding layer LB2 covers the lower surface and sidewalls of the sensor 110. In example (II), the substrate SUB2 is located between the first light shielding layer LB1 and the sensing unit SSU, and the first light shielding layer LB1 includes an opening OP. In example (III), the sensor 110 is located between the first light shielding layer LB1 and the substrate SUB2, and the first light shielding layer LB1 includes an opening OP. In example (IV), the relative position of the first light shielding layer LB1 and the sensor 110 is similar to that of example (I), but the first light shielding layer LB1 includes a plurality of smaller openings OP arranged adjacent to each other. This design helps to improve the collimation of the incident light, that is, it can better limit the light entering the sensor 110 to the light close to the normal incident direction, and can filter the light incident at a large angle. The opening OP is set in the first light shielding layer LB1, so that the sensor 110 can receive more light reflected by the finger, thereby improving the signal strength. In addition, the first light shielding layer LB1 can block most of the ambient light, thereby improving the signal-to-noise ratio.

[0049] Please refer to Figure 8 , Figure 8 It is a partial enlarged cross-sectional schematic diagram of a fifth embodiment of the electronic device of the present invention. Figure 8The electronic device 100 shown also includes a cover plate CG disposed on the second substrate SUB2. The cover plate CG is exemplified as a transparent glass substrate or a transparent flexible substrate, but is not limited thereto. When fingerprint recognition is performed, the finger may contact the upper surface of the cover plate CG for recognition. In the direction DZ, the opening OP of the first light shielding layer LB1 may not overlap with the sensor 110, but may be located on the adjacent side of the sensor 110. When the finger FGR approaches the cover plate CG, the light L1 emitted by the light source LSR or the light emitting unit may enter the cover plate CG and be reflected by the finger FGR near the upper surface of the cover plate CG. The reflected light L2 may use the cover plate CG as a light guide and travel laterally therein (e.g., by total reflection) to a farther side before emitting the cover plate CG and entering the sensor 110 through the opening OP. For example, the light source LSR may be disposed on the first substrate (not shown) or the second substrate SUB2, for example, near the outer edge of the first substrate, but is not limited thereto. In some embodiments, the light source LSR may also be an additional component independently disposed outside the substrate.

[0050] Please refer to Fig. 9 , Fig. 9 This is a partial cross-sectional enlarged schematic diagram of a variation of the fifth embodiment of the electronic device of the present invention. Fig. 9 In the electronic device 100 shown, the sensing element SSE1 corresponds to the adjacent pixel 1021, the sensing element SSE2 corresponds to the adjacent pixel 1022, and the opening OP of the first light shielding layer LB1 has an inclined sidewall OPS. When the electronic device 100 performs fingerprint recognition, the sensor 110 can receive the reflected light emitted by the pixel that does not correspond to it. For example, the pixel 1022 is not adjacent to the sensing element SSE1 and does not correspond to the sensing element SSE1, but the light L1 emitted by it can be reflected by the finger FGR to form the light L2, which is emitted into the sensor 110 of the sensing element SSE1 that is farther away, so as to perform fingerprint sensing and recognition. Fig. 9 The opening OP with the inclined sidewall OPS can be designed to receive reflected light from pixels 1022 at a specific distance, but the present invention is not limited thereto. The sensor 110 can receive reflected light from pixels at a greater distance, for example, it can receive reflected light L2 from light L1 emitted by pixels at two or more pixels.

[0051] Please refer to Fig.10 , Fig.10 It is a partial cross-sectional enlarged schematic diagram of the sixth embodiment and a variant embodiment of the electronic device of the present invention. Fig.10The electronic device 100 shown may also include a third light shielding layer LB3. As shown in example (I), the first light shielding layer LB1 is disposed on the upper surface of the second substrate SUB2, the second light shielding layer LB2 is disposed on the lower side of the sensor 110, and the third light shielding layer LB3 is disposed between the second substrate SUB2 and the sensor 110. In example (II), the first light shielding layer LB1 has an opening OP1, and the third light shielding layer LB3 has an opening OP2, wherein the opening OP1 and the opening OP2 may have approximately the same size and correspond to each other up and down, for example, the side walls of the two are substantially aligned with each other, but not limited thereto. The light incident angle restriction formed by the openings OP1 and OP2 can filter the incident light or improve the signal-to-noise ratio. In example (III), the size or width of the opening OP1 is smaller than that of the opening OP2, and the opening OP1 substantially corresponds to the central area of ​​the opening OP2. Under this design, the light L1 and the light L2 can sequentially pass through the opening OP1, the second substrate SUB2, and the opening OP2 at a larger incident angle and then enter the sensor 110. In example (IV), a side wall of the opening OP1 can be substantially aligned with a side wall of the opening OP2. This design allows the light L1 and the light L2 incident on the sensor 110 to have different angles. The opening sizes and relative positions of the openings OP1 and OP2 can be determined according to actual product requirements. The material of the third light shielding layer LB3 can be the same as or different from the first light shielding layer LB1 and the second light shielding layer LB2, and the size and width of the third light shielding layer LB3 are not limited to Fig.10 The ones shown can be changed according to actual needs. Fig.10 Instance (III) and instance (IV) have different light incident angle directions, which correspond to the situations of detecting large-angle light (for example, when the light source is a farther pixel or light source LSR) or small-angle light (for example, when the light source is a near pixel).

[0052] Please refer to Fig.11 , Fig.11 FIG. 1 is a partial enlarged cross-sectional view of a seventh embodiment of an electronic device of the present invention, wherein Fig.11 The cross-sectional position shown can roughly correspond to Figure 3 The line segment A-A' and the line segment B-B'. In some embodiments, a light blocking layer LSL may be disposed above the driving transistor 106 and the reading transistor 108. The light blocking layer LSL may include a material with low light transmittance, such as a metal material, but is not limited thereto. The light blocking layer LSL may serve as the first light shielding layer LB1 mentioned in the present invention, and the black matrix layer (served as the first light shielding layer LB1 in the above embodiment) may be replaced by the light blocking layer LSL. In addition, compared to the above embodiment, Fig.11 The electronic device 100 shown also omits the insulating layer 120 which can be used as a protective coating. Fig.11In the embodiment, the light conversion element 104 is located between the protective layer 128 and the flat layer 130 . In the direction DZ, the light conversion element 104 and the sensor 110 are arranged at substantially the same height. In other words, the sensor 110 may also be located between the protective layer 128 and the flat layer 130 .

[0053] Please refer to Fig.12 , Fig.12 FIG. 1 is a partial cross-sectional enlarged schematic diagram of a first variation of the seventh embodiment of the electronic device of the present invention, wherein Fig.12 The cross-sectional position shown can roughly correspond to Figure 3 The line segment A-A' and the line segment B-B'. Fig.12 The second light shielding layer LB2 of the electronic device 100 covers the lower surface of the second substrate SUB2 in a large area, and has an opening LB21, and the light conversion element 104 is respectively disposed in one of the openings LB21. The second light shielding layer LB2 may include a black matrix layer, but is not limited thereto.

[0054] Please refer to Fig.13 , Fig.13 FIG. 1 is a partial cross-sectional enlarged schematic diagram of a second variation of the seventh embodiment of the electronic device of the present invention, which only shows the portion roughly corresponding to FIG. Figure 3 The section position of line segment AA. Fig.13 In the embodiment, the first light shielding layer LB1 and the insulating layer 122, the gate insulating layer 124, the insulating layer 126 and the protective layer 128 in the sensing unit SSU have an opening 168, and the opening 168 can accommodate a refractive index adjustment material 166, for example, the refractive index n value of the material is higher than that of the first light shielding layer LB1, and can also be higher than that of the insulating layer 122, the gate insulating layer 124, the insulating layer 126 and the protective layer 128, so that after the light enters the opening 168, it is less likely to be emitted from its side wall, and will be reflected downward in the opening 168 and enter the sensor 110, so as to improve the light sensing efficiency. In another variant embodiment, the opening 168 and the refractive index adjustment material 166 can be only located in the first light shielding layer LB1, while the insulating layer 122, the gate insulating layer 124, the insulating layer 126 and the protective layer 128 do not have the opening 168.

[0055] Please refer to Fig.14 , Fig.15 and Fig.16 , Fig.14 is a partial cross-sectional enlarged schematic diagram of a third variation of the seventh embodiment of the electronic device of the present invention, Fig.15 is a partial cross-sectional enlarged schematic diagram of a fourth variation of the seventh embodiment of the electronic device of the present invention, and Fig.16 This is a partial cross-sectional enlarged schematic diagram of the fifth variation of the seventh embodiment of the electronic device of the present invention. Fig.14In the electronic device 100 shown, the protective layer 128 has an opening 168, and a portion of the sensor 110 is disposed in the opening 168. Fig.15 In the electronic device 100 shown in FIG. 1 , the gate insulating layer 124 , the insulating layer 126 , and the protective layer 128 have an opening 168 , and a portion of the sensor 110 is disposed in the opening 168 . Fig.15 In the embodiment, the first light shielding layer LB1 includes an opening OP, and the insulating layer 122 is filled in the opening OP. In this design, the path of the incident light can be adjusted by utilizing the difference in refractive index between the insulating layer 122 and the opening OP. In another variant embodiment, the first light shielding layer LB1 may not have the opening OP. Fig.16 In the electronic device 100 shown, the insulating layer 122, the gate insulating layer 124, the insulating layer 126 and the protective layer 128 have an opening 168, the sensor 110 and a portion of the second light shielding layer LB2 are disposed in the opening 168, and the first light shielding layer LB1 has an opening OP, and a portion of the upper electrode 1101 of the sensor 110 is disposed in the opening OP.

[0056] Please refer to Fig.17 , Fig.17 FIG. 1 is a partial cross-sectional enlarged schematic diagram of an eighth embodiment of the electronic device of the present invention. In some embodiments, the electronic device 100 may further include one or more lenses LEN disposed on the upper side of the second substrate SUB2. Fig.17 As shown, in the direction DZ, the first light shielding layer LB1 is disposed between the second substrate SUB2 and the lens LEN, and the first light shielding layer LB1 includes an opening OP, which roughly corresponds to the sensor 110 and the lens LEN. In detail, the second substrate SUB2 may include a plurality of lenses LEN, each corresponding to a sensor 110 and an opening OP of the first light shielding layer LB1. In addition, an adhesive layer 174 may be used to adhere the lens LEN to the surface of the first light shielding layer LB1. It should be noted that Fig.17 In the embodiment, the adhesive layer 174 also covers the area outside the opening OP, but the present embodiment is not limited thereto. In some embodiments, the adhesive layer 174 is only located in the opening OP. Fig.17 The insulating layer 122, the gate insulating layer 124, the insulating layer 126 and the protective layer 128 shown include an opening 168, the sensor 110 is disposed in the opening 168, and the planar layer 176 covers the protective layer 128 and fills the opening 168. It should be noted that at the opening 168, the sidewalls of the insulating layer 126 and the protective layer 128 may not be aligned with the sidewalls of the insulating layer 122 and the gate insulating layer 124, and the bias line 132 and a portion of the upper electrode 1101 of the sensor 110 may be disposed where the insulating layer 126 exposes the gate insulating layer 124. Fig.17In the embodiment, another flat layer 130 may cover the surface of the flat layer 176. A second light shielding layer LB2 may cover the surface of the flat layer 130.

[0057] Please refer to Fig.18 , Fig.18 This is a partial cross-sectional enlarged schematic diagram of a variation of the eighth embodiment of the electronic device of the present invention. Fig.18 In the embodiment, an insulating layer 180 may be disposed between the lens LEN and the first light shielding layer LB1. The insulating layer 180 may include (but not limited to) an inorganic insulating material, and a portion of the lens LEN and the insulating layer 180 may be disposed in the opening OP of the first light shielding layer LB1. In another variant embodiment (not shown), the first light shielding layer LB1 may be disposed on the lower side of the second substrate SUB and have an opening OP, and the opening 168 exposes the opening OP, and a portion of the sensor 110 is disposed in the opening OP and the opening 168.

[0058] Please refer to Fig.19 , Fig.19 FIG. 1 is an enlarged partial cross-sectional view of a ninth embodiment of an electronic device of the present invention. Fig.19 In the embodiment, the second light shielding layer LB2 is disposed around the bottom surface and the bottom of the side wall of the sensor 110, and the third light shielding layer LB3 is disposed around the top of the side wall of the sensor 110. The third light shielding layer LB3 and the second light shielding layer LB2 may include different materials, for example, the second light shielding layer LB2 may have a higher elastic coefficient, or elastic recovery property. A first alignment layer PI1 and a second alignment layer PI2 are disposed on both sides of the display medium layer DML, respectively adjacent to the upper surface SUB11 of the first substrate SUB1 and the lower surface SUB21 of the second substrate SUB2, wherein the second alignment layer PI2 covers the second light shielding layer LB2 and the sensor 110. In the area with the sensor 110, the second alignment layer PI2 may be in contact with the first alignment layer PI1. The sensor 110 and the second light shielding layer LB2 may be used as spacers of the display medium layer DML to partially replace or completely replace the optical spacer to provide a function of maintaining the cell gap of the display medium layer DML. When the second light shielding layer LB2 or the third light shielding layer LB3 has good elastic recovery force, it can also provide better support function as a spacer. In some variant embodiments, the combination of the sensor 110 and the second light shielding layer LB2 is still used as a spacer of the display medium layer DML, but does not include the third light shielding layer LB3.

[0059] Please refer to Fig. 20 , Fig.21 and Fig. 22 , Fig. 20A signal diagram of an embodiment of a method for performing fingerprint recognition on an electronic device according to the present invention is shown. Fig.21 is a schematic diagram of the appearance of an electronic device according to an embodiment of the present invention, Fig. 22 1 is a flow chart of an embodiment of a method for fingerprint recognition of an electronic device of the present invention. The electronic device 100 to which the method for fingerprint recognition of the present invention is applied may include but is not limited to the structure of any of the above embodiments or variant embodiments. For example, the electronic device 100 may include a first substrate, a second substrate, a sensing unit and a light-emitting unit, wherein the first substrate is located on a side of the second substrate opposite to the display surface 100d, the sensing unit is disposed on the second substrate, and the light-emitting unit (e.g. Figure 8 Light source LSR or Figure 1 The backlight module BLU shown is located on the side of the second substrate opposite to the display surface 100d. The components in the electronic device 100 can refer to the description of other embodiments and related drawings of the present invention, and will not be repeated here. Fig.21 As shown, the display surface 100d can be divided into a general display area R1 and a fingerprint recognition area R2. It should be noted that although the fingerprint recognition area R2 has the function of fingerprint recognition, it can still display images, and the distribution area and size of the display area R1 and the fingerprint recognition area R2 are not based on Fig.21 In some embodiments, the electronic device 100 may further include a frame FRM and a signal processing unit SPU, wherein the frame FRM is located outside the display 100D, and the signal processing unit SPU may be disposed on the back side of the display 100D. Fig. 20As shown, time T1 indicates that when fingerprint recognition has not been performed, the light-emitting unit can remain in a closed state or in a long-on mode (continuously emitting light of uniform intensity). Time T2 indicates the time when the electronic device 100 of the present invention is in the fingerprint recognition mode. When the fingerprint recognition mode of the electronic device 100 is activated, the light-emitting unit or light source used to provide fingerprint recognition light will generate light with intermittent intensity, for example, the light-emitting unit will be turned on or off at fixed intervals, or the light source has a fixed light refresh rate (refreshframe rate). Before the finger has not touched the electronic device 100 for fingerprint recognition (time TA), the sensing unit used for fingerprint recognition may only receive ambient light or background light and generate a light sensing signal with intensity S1. When the user touches the electronic device 100 with a finger for fingerprint recognition (time TB), the sensing unit will further receive the light reflected by the finger, so the intensity of the light sensing signal detected in time TB includes intensity S1 and intensity S2, wherein intensity S2 is generated by the light reflected back to the sensing unit by the finger. After completing fingerprint recognition and turning off the fingerprint recognition mode, time T3 is entered, at which time the light-emitting unit will turn off or resume the long-on mode. The sensing unit can transmit the light sensing signal to the signal processing unit SPU, and the signal processing unit SPU can distinguish intermittent signals from the light sensing signal, that is, signals with intermittent intensity changes in time TB, and convert the intermittent signals into fingerprint recognition data. On the other hand, the signal processing unit SPU can also distinguish continuous signals from the light sensing signal, that is, light sensing signals obtained in time TA and time T3, and when the signal processing unit SPU converts the aforementioned intermittent signal into fingerprint sensing data, the aforementioned continuous signal will be excluded, for example, the intensity of the continuous signal will be excluded from the light sensing signal, so that the signal strength after calculation can have a larger intensity difference.

[0060] According to the above, an embodiment of the method for performing fingerprint recognition by the electronic device 100 of the present invention includes the following steps:

[0061] S100: providing an electronic device, the electronic device comprising a sensing unit, a light emitting unit and a signal processing unit;

[0062] SS102: Start a fingerprint recognition mode, that is, enter Fig. 20 Time T2 in the middle;

[0063] SS104: Enables the light-emitting unit to produce light with intermittent intensity;

[0064] SS106: the sensing unit transmits the sensed light sensing signal to the signal processing unit SPU; and

[0065] SS108: The signal processing unit SPU distinguishes intermittent signals from the light sensing signals and converts the intermittent signals into fingerprint recognition data.

[0066] According to the present invention, the electronic device may include a sensing unit and at least one shading layer, wherein the sensing unit can be used for fingerprint identification, and the at least one shading layer is disposed between the sensing unit and the viewing side, that is, closer to the display surface than the sensing unit. The shading layer will shield at least a portion of the sensing unit, which can reduce the total amount of ambient light entering the sensing unit, thereby improving the signal-to-noise ratio to improve the effect of signal sensing and the accuracy of fingerprint identification. In different embodiments, the electronic device of the present invention can be matched with the relative positions of the light conversion element, sensor, substrate and one or more shading layers, the opening of the shading layer and the opening of the insulating layer, etc., to design an electronic device with fingerprint identification function according to the actual needs of the product. In addition, the method for fingerprint identification of the present invention can be used to deduct the background signal when processing the signal, or use an intermittent light-emitting unit to perform fingerprint identification to improve the accuracy of fingerprint identification.

[0067] The above description is only an embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may be modified and varied in various ways. The features of the embodiments may be mixed and matched as long as they do not violate the spirit of the invention or conflict with each other. Any modification, equivalent substitution, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. An electronic device, characterized in that: The electronic device comprises: a first substrate; a second substrate overlapping the first substrate, wherein the second substrate comprises a first side and a second side opposite to the first side; a sensing unit disposed between the first substrate and the second substrate, wherein the second side of the second substrate is located between the sensing unit and the first side of the second substrate; a first light shielding layer, disposed on the first side of the second substrate and having a first opening; and a second light shielding layer, disposed on the sensing unit, wherein the second light shielding layer has a second opening; In a top-view direction of the electronic device, the first opening overlaps the second opening.

2. The electronic device according to claim 1, characterized in that: A material of the first light-shielding layer is different from a material of the second light-shielding layer.

3. The electronic device according to claim 1, characterized in that: The first light-shielding layer includes an organic or inorganic dark-colored film layer.

4. The electronic device according to claim 1, characterized in that: In a top-view direction of the electronic device, the first opening and the second opening overlap the sensing unit.

5. The electronic device according to claim 1, characterized in that: The electronic device further includes a cover plate, wherein the first light shielding layer is disposed between the sensing unit and the cover plate.

6. An electronic device, characterized in that: The electronic device comprises: a first substrate; a second substrate overlapping the first substrate, wherein the second substrate comprises a first side and a second side opposite to the first side; a sensing unit disposed between the first substrate and the second substrate, wherein the second side of the second substrate is located between the sensing unit and the first side of the second substrate; a first light shielding layer, disposed on the first side of the second substrate and having a first opening; and a second light shielding layer, disposed on the sensing unit, wherein the second light shielding layer has a second opening; The width of the first opening is smaller than the width of the second opening.

7. The electronic device according to claim 6, characterized in that: In a top-view direction of the electronic device, the first opening and the second opening overlap the sensing unit.

8. The electronic device according to claim 6, characterized in that: The electronic device further includes a display medium layer disposed on the first substrate.

9. The electronic device according to claim 8, characterized in that: The display medium layer includes an organic light emitting diode.

10. The electronic device according to claim 6, characterized in that: A material of the first light-shielding layer is different from a material of the second light-shielding layer.

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