Perovskite battery assembly and preparation method thereof

Abstract

The invention provides a perovskite battery assembly and a preparation method thereof. The perovskite cell assembly comprises a light-transmitting substrate, a plurality of insulating parts and a plurality of serially connected sub-cells, each sub-cell comprises a light-transmitting electrode layer, a first carrier transport layer, a perovskite layer, a second carrier transport layer and a conductive electrode layer which are stacked in sequence, and polarities of carriers transmitted by the first carrier transport layer and the second carrier transport layer are opposite; wherein the light-transmitting substrate is provided with a light-transmitting electrode layer of each sub-cell, an insulating part is arranged between the light-transmitting electrode layers of two adjacent sub-cells, and the insulating parts are used for insulating the light-transmitting electrode layers of the two adjacent sub-cells. According to the perovskite battery assembly, the problem that the film forming quality is poor due to the fact that a completely-covered film is not easy to form at the P1 scribing position can be solved.

Description

Technical Field

[0001] The invention belongs to the field of perovskite batteries and relates to a perovskite battery component and a preparation method thereof. Background Art

[0002] Perovskite solar cell modules are processed through three laser processes (P1, P2 and P3) to form the circuit structure in the perovskite cell (see Figure 1 ), the perovskite cell is divided into a component consisting of multiple sub-cells connected in series. The P1 laser divides the TCO transparent electrode layer into independent strip sub-electrodes. The P2 laser removes the (HTL or ETL layer) / perovskite layer (PVK) / (ETL or HTL layer) to form a channel connecting the upper and lower electrodes in series (the upper electrode layer is connected in series with the TCO transparent electrode layer through the P2 laser channel). The P3 laser removes the upper electrode layer / (HTL or ETL layer) / perovskite layer (PVK) / (ETL or HTL layer) of the adjacent series sub-cells to form a circuit structure of sub-cells in series. However, the P1 laser cuts off the TCO film layer to form a step. Because the current TCO film layer thickness is 300-700nm, and the upper hole transport layer (HTL) or electron transport layer (ETL) film thickness is 5-40nm, it is difficult to form a completely covered film on this step, thereby affecting the film quality of the subsequent PVK layer. At the P1 line, the perovskite film layer decomposes due to poor crystal quality, shortening the service life. Summary of the invention

[0003] The present invention mainly provides a perovskite battery component and a preparation method thereof, aiming to solve the problem that it is difficult to form a completely covered film at the scribe line of the perovskite battery component P1, resulting in poor film quality.

[0004] In order to achieve the above object, the present invention adopts the following technical solutions:

[0005] The present invention provides a perovskite battery assembly, comprising a light-transmitting substrate, a plurality of insulating members, and a plurality of sub-batteries connected in series, each of the sub-batteries comprising a light-transmitting electrode layer, a first carrier transport layer, a perovskite layer, a second carrier transport layer, and a conductive electrode layer stacked in sequence, wherein the polarities of the carriers transported by the first carrier transport layer and the second carrier transport layer are opposite; wherein:

[0006] The light-transmitting substrate is provided with the light-transmitting electrode layer of each sub-cell, and an insulating member is provided between the light-transmitting electrode layers of two adjacent sub-cells, and the insulating member is used to insulate the light-transmitting electrode layers of the two adjacent sub-cells.

[0007] Optionally, a P3 groove is provided between two adjacent sub-batteries, the P3 groove is carved from the conductive electrode layer to the first carrier transport layer, and the bottom of the P3 groove exposes the light-transmitting electrode layer;

[0008] The perovskite battery assembly further includes a plurality of conductive members, each of which is provided between two adjacent sub-batteries, and the conductive member is located between the P3 groove and the insulating member;

[0009] In any two adjacent sub-cells, the first end of the conductive member contacts the conductive electrode layer of the first sub-cell, and the second end of the conductive member contacts the light-transmitting electrode layer of the second sub-cell.

[0010] Optionally, the conductive member contacts the insulating member, and a height of the light-transmitting electrode layer is the same as a height of the insulating member.

[0011] Optionally, the height of the contact portion between the conductive member and the insulating member is defined as H2, the height of the light-transmitting electrode layer is defined as H1, and H2 is 40% to 60% of H1.

[0012] Optionally, the height H2 is 50% of the height H1.

[0013] Optionally, the material of the light-transmitting electrode layer is a fluorine-doped tin dioxide film material or an indium tin oxide film material; the maximum height of the light-transmitting electrode layer is 300-700 nm;

[0014] And / or, the material of the conductive part includes one or more of aluminum alloy, silver alloy, copper alloy, magnesium alloy, gold metal, nickel metal, and titanium metal; the height of the conductive part is 500-800nm; the width of the conductive part is 5-10um; the material of the conductive electrode layer is Cu or Ag or ITO / Ag or IZO / Ag.

[0015] Optionally, the material of the insulating member is an inorganic insulating gate material or an organic insulating gate material; the inorganic insulating gate material is SiOx, SiNx, SiC, Al2O3 or ZnO; the organic insulating gate material is acrylic, polyimide, epoxy resin or polyester; the height of the insulating member is 200 to 600 nm; the width of the insulating member is 5 to 10 um;

[0016] And / or, the material of the perovskite layer is FAPbI x Cl (1-x) .

[0017] Optionally, a lower passivation layer is provided between the first carrier transport layer and the perovskite layer, and an upper passivation layer is provided between the second carrier transport layer and the perovskite layer;

[0018] When the perovskite battery component is a trans-pin device, the first carrier transport layer is a hole transport layer; the material of the lower passivation layer includes one or more of KCl, NaCl, and ZnO; and the second carrier transport layer is an electron transport layer;

[0019] When the perovskite battery component is a formal NIP device, the first carrier transport layer is an electron transport layer; the lower passivation layer is a self-assembled molecular layer; the material of the upper passivation layer is iodinated phenylethylamine; and the second carrier transport layer is a hole transport layer.

[0020] The present invention also provides a method for preparing a perovskite battery assembly. When the perovskite battery assembly is a formal nip device, the method comprises the following steps:

[0021] (1) Selecting TCO conductive glass as a substrate, the substrate includes a light-transmitting base and a TCO conductive film from bottom to top;

[0022] (2) using a wet etching process or a laser etching process on the TCO conductive glass to form a plurality of stepped light-transmitting electrode layers having P1.1 grooves, wherein the plurality of light-transmitting electrode layers have P1 grooves between them;

[0023] When the laser etching process is adopted, P1 laser scribing and P1.1 laser scribing are performed on the TCO conductive glass separately or simultaneously, and the P1.1 laser etched area is adjacent to the P1 laser etched area; wherein the P1 laser etches the TCO conductive film until the transparent substrate is exposed; the P1.1 laser etches 40-60% of the total thickness of the TCO conductive film to form a P1.1 scribing groove adjacent to the P1 scribing groove;

[0024] When the wet etching process is adopted, P1 wet etching and P1.1 wet etching are performed on the TCO conductive glass separately or simultaneously, and the P1.1 laser etching area is adjacent to the P1 laser etching area; wherein the P1 wet etching TCO conductive film is performed until the transparent substrate is exposed; the P1.1 wet etching TCO conductive film is performed by 40-60% of the total thickness, forming a P1.1 groove adjacent to the P1 groove;

[0025] (3) Fill the P1 groove with insulating material to form an insulating member, so that the maximum height of the insulating member is the same as that of the light-transmitting electrode layer;

[0026] (5) Fill the P1.1 groove with conductive material to form a conductive member protruding from the light-transmitting electrode layer;

[0027] (6) preparing a composite layer on the light-transmitting electrode layer and the insulating member, including sequentially preparing a first carrier transport layer, a lower passivation layer, a perovskite layer, an upper passivation layer, and a second carrier transport layer; preferably, controlling the upper surface of the second carrier transport layer to be flush with the upper surface of the conductive member;

[0028] (7) preparing a conductive electrode layer on the second carrier transport layer and the conductive member;

[0029] (8) P3 laser scribing is then performed from the conductive electrode layer to the first carrier transport layer of the combined layer until the transparent electrode layer is exposed, so that a P3 scribing groove is formed on each transparent electrode layer, thereby obtaining a solar perovskite cell module.

[0030] A method for preparing a perovskite battery component, wherein when the perovskite battery component is a trans-pin device, the method comprises the following steps:

[0031] (1) Selecting TCO conductive glass as a substrate, the substrate includes a light-transmitting base and a TCO conductive film from bottom to top;

[0032] (2) performing P1 laser scribing and P1.1 laser scribing on the TCO conductive glass separately or simultaneously, and the P1.1 laser etched area is adjacent to the P1 laser etched area, forming a plurality of step-shaped light-transmitting electrode layers with P1.1 scribing grooves, and the plurality of light-transmitting electrode layers have P1 scribing grooves between them; wherein the P1 laser etches the TCO conductive film until the light-transmitting substrate is exposed; and the P1.1 laser etches 40% to 60% of the total thickness of the TCO conductive film, forming a P1.1 scribing groove adjacent to the P1 scribing groove;

[0033] (3) Fill the P1 groove with insulating material to form an insulating member, so that the maximum height of the insulating member is the same as that of the light-transmitting electrode layer;

[0034] (5) Fill the P1.1 groove with conductive material to form a conductive member protruding from the light-transmitting electrode layer;

[0035] (6) preparing a composite layer on the light-transmitting electrode layer and the insulating member, including sequentially preparing a first carrier transport layer, a lower passivation layer, a perovskite layer, and a second carrier transport layer, and controlling the upper surface of the second carrier transport layer to be flush with the upper surface of the conductive member;

[0036] (7) preparing a conductive electrode layer on the second carrier transport layer and the conductive member;

[0037] (8) P3 laser scribing is then performed from the conductive electrode layer to the first carrier transport layer of the combined layer until the transparent electrode layer is exposed, so that a P3 scribing groove is formed on each transparent electrode layer, thereby obtaining a solar perovskite cell module.

[0038] Compared with the prior art, the present invention has the following advantages:

[0039] The perovskite battery assembly of the present invention is provided with an insulating member between the light-transmitting electrode layers of two adjacent sub-batteries, that is, the insulating member fills the groove at the P1 line, thereby raising the bottom of the groove or eliminating the groove, so that the first carrier transport layer is easier to form a fully covered film at the P1 line, thereby reducing the influence of the groove formed by the P1 line on the film quality of the subsequent perovskite layer, thereby improving the film quality of the perovskite battery assembly, and then improving the service life of the perovskite battery assembly. In addition, in order to achieve insulation between sub-batteries in the prior art, the distance between the light-transmitting electrode layers of two adjacent sub-batteries is increased, resulting in an increase in the dead zone width. Due to the presence of the insulating member, the perovskite battery assembly of the present invention can insulate the light-transmitting electrode layers of two adjacent sub-batteries. Compared with the prior art, the perovskite battery assembly of the present invention can reduce the distance between the light-transmitting electrode layers of two adjacent sub-batteries, thereby reducing the dead zone width, and then improving the photoelectric conversion efficiency of the perovskite battery assembly. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] Figure 1 It is a schematic diagram of the structure of a perovskite battery component in the prior art;

[0041] Figure 2 This is a schematic diagram of the structure of the perovskite battery assembly of Example 1;

[0042] Figure 3 This is a schematic diagram of the process of the perovskite battery assembly of Example 1;

[0043] Figure 4 This is a schematic diagram of the structure of the perovskite battery assembly of Example 2;

[0044] Figure 5 Schematic diagram of the process of forming P1 line grooves and P2 line grooves by wet etching.

[0045] Legend:

[0046] 10. TCO conductive glass; 101. Transparent substrate; 102. Transparent electrode layer; 201. Insulating member; 301. Conductive member; 40. Combination layer; 401. First carrier transport layer; 402. Lower passivation layer; 403. Perovskite layer; 404. Upper passivation layer; 405. Second carrier transport layer; 501. P3 groove; 601. Conductive electrode layer; H1. Height of the transparent electrode layer; H2. Height of the contact portion between the conductive member and the insulating member. DETAILED DESCRIPTION

[0047] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0048] Perovskite solar cell modules are processed through three laser processes (P1, P2 and P3) to form the circuit structure in the perovskite cell (see Figure 1 ), the perovskite cell is divided into a component consisting of multiple sub-cells connected in series, the P1 laser divides the TCO transparent electrode layer into independent strip sub-electrodes, the P2 laser removes the (HTL or ETL layer) / perovskite layer 403 (PVK) / (ETL or HTL layer) to form a channel connecting the upper and lower electrodes in series (the upper electrode layer is connected in series with the TCO transparent electrode layer via the P2 laser channel), and the P3 laser removes the upper electrode layer / (HTL or ETL layer) / perovskite layer 403 (PVK) / (ETL or HTL layer) of adjacent series sub-cells to form a circuit structure in which the sub-cells are connected in series. However, the P1 laser cuts off the TCO film to form a step. Since the current TCO film thickness is 300-700nm and the upper hole transport layer (HTL) or electron transport layer (ETL) film thickness is 5-40nm, it is difficult to form a completely covered film on this step, which affects the film quality of the subsequent PVK layer. The perovskite film decomposes at the P1 line due to poor crystallization quality, shortening its service life.

[0049] At the P1 line, the difference in thickness of the upper and lower film layers caused by the step will generate a higher voltage during the discharge process of the perovskite solar cell module, which can easily cause the failure of the perovskite film layer here and seriously reduce the service life of the module. In order to achieve complete insulation between sub-cells, the width of the P1 line needs to be greater than 20um, which reduces the photoelectric conversion efficiency of the perovskite solar module.

[0050] In summary, the perovskite solar cell modules in the prior art have a series of problems in the laser process, such as poor film quality caused by steps, film failure caused by increased voltage, and reduced photoelectric conversion efficiency caused by increased dead zone area.

[0051] The present application proposes a perovskite battery assembly, which aims to solve the problem that it is difficult to form a completely covered film at the P1 scribe line, resulting in poor film quality.

[0052] The specific structure of the perovskite battery component of this application is described below:

[0053] Combined with reference Figure 2In a possible implementation of the present application, the perovskite cell assembly includes a light-transmitting substrate 101, a plurality of insulating members 201, and a plurality of sub-cells connected in series, each sub-cell including a light-transmitting electrode layer 102, a first carrier transport layer 401, a perovskite layer 403, a second carrier transport layer 405, and a conductive electrode layer 601 stacked in sequence. The light-transmitting substrate 101 may be made of glass, PET (polyethylene terephthalate), or other effective light-transmitting materials.

[0054] The polarities of the carriers transported by the first carrier transport layer 401 and the second carrier transport layer 405 are opposite, which means that the polarities of the carriers transported by the first carrier transport layer 401 and the carriers transported by the second carrier transport layer 405 are opposite. For example, if the first carrier transport layer 401 transports electrons, the second carrier transport layer 405 transports holes. If the first carrier transport layer 401 transports holes, the second carrier transport layer 405 transports electrons.

[0055] The transparent substrate 101 is provided with the transparent electrode layer 102 of each sub-cell, and an insulating member 201 is provided between the transparent electrode layers 102 of two adjacent sub-cells. The insulating member 201 is used to insulate the transparent electrode layers 102 of two adjacent sub-cells.

[0056] It can be understood that an insulating member 201 is provided between the light-transmitting electrode layers 102 of two adjacent sub-cells, that is, the insulating member 201 fills the groove at the P1 line, thereby raising the bottom of the groove or eliminating the groove, so that the first carrier transport layer 401 is easier to form a completely covered film at the P1 line, thereby reducing the influence of the groove formed by the P1 line on the film quality of the subsequent perovskite layer 403, thereby improving the film quality of the perovskite battery assembly, and further improving the service life of the perovskite battery assembly. In addition, in order to achieve insulation between sub-cells in the prior art, the distance between the light-transmitting electrode layers 102 of two adjacent sub-cells is increased, resulting in an increase in the dead zone width. Due to the presence of the insulating member 201, the insulating member 201 can insulate the light-transmitting electrode layers 102 of two adjacent sub-cells. Compared with the prior art, the perovskite cell assembly of the present invention can reduce the distance between the light-transmitting electrode layers 102 of two adjacent sub-cells, thereby reducing the dead zone width, and further improving the photoelectric conversion efficiency of the perovskite cell assembly.

[0057] Combined with reference Figure 2In a possible embodiment of the present application, a P3 groove 501 is provided between two adjacent sub-cells, the P3 groove 501 is engraved from the conductive electrode layer 601 to the first carrier transport layer 401, and the bottom of the P3 groove 501 exposes the transparent electrode layer 102. The perovskite cell assembly also includes a plurality of conductive members 301, a conductive member 301 is provided between two adjacent sub-cells, and the conductive member 301 is located between the P3 groove 501 and the insulating member 201. In any two adjacent sub-cells, the first end of the conductive member 301 contacts the conductive electrode layer 601 of the first sub-cell, and the second end of the conductive member 301 contacts the transparent electrode layer 102 of the second sub-cell.

[0058] It can be understood that in two adjacent sub-cells, conductive connection between the conductive electrode layer 601 of the first sub-cell and the transparent electrode layer 102 of the second sub-cell through the conductive member 301 can reduce contact resistance and improve the stability of the sub-cells in series.

[0059] In the prior art, it is necessary to consider both the laser scribing accuracy and the heat-affected zone. A spacing of 10 to 20 um is required between the P1 and P2 lines, which results in an increase in the dead zone area of ​​the perovskite battery module. Usually, the dead zone width of the perovskite module caused by the laser scribing process is about 150 to 200 um.

[0060] Combined with reference Figure 2 In a possible implementation of the present application, the conductive member 301 is in contact with the insulating member 201. Specifically, the P1 line forms a groove for mounting the insulating member 201, and the P1.1 line forms a groove for mounting the conductive member 301. The conductive member is in contact with the insulating member 201, which means that the groove of the P1 line is connected to the groove of the P1.1 line, so that there is no need to set a safety spacing for laser scribing, thereby reducing the dead zone area, thereby improving the conversion efficiency of the perovskite component.

[0061] The height of the light-transmitting electrode layer 102 is the same as the height of the insulating member 201. In this way, the insulating member 201 can completely fill the groove formed by the P1 line, thereby eliminating the influence of the groove on the subsequent film formation, thereby improving the film formation quality of the perovskite battery assembly, and further improving the service life of the perovskite battery assembly.

[0062] Combined with reference Figure 2In a possible implementation of the present application, the height of the contact portion between the conductive member 301 and the insulating member 201 is defined as H2, the height of the light-transmitting electrode layer 102 is defined as H1, and H2 is 40% to 60% of H1. The height H2 is greater than or equal to 40% of H1, which allows the conductive member 301 to fully contact the light-transmitting electrode layer 102, thereby ensuring the reliability of conduction. The height H2 is less than or equal to 60% of H1, which can reserve sufficient safety distance for the laser scribing of the groove P1.1 for mounting the conductive member 301, and can prevent the P1.1 laser scribing from penetrating the light-transmitting electrode layer 102. It should be noted that the height H2 can be 40%, 45%, 50%, 55%, 60%, etc. of the height H1.

[0063] Combined with reference Figure 2 In a possible implementation of the present application, the height H2 is 50% of the height H1. This configuration can not only allow the conductive member 301 to be in relatively sufficient contact with the light-transmitting electrode layer 102, but also allow sufficient safety distance to be reserved for P1.1 laser scribing.

[0064] In a possible implementation of the present application, refer to Figure 2 The perovskite cell assembly is a transverse pin device, comprising a light-transmitting substrate 101, a light-transmitting electrode layer 102, an insulating member 201, a conductive member 301, a combined layer 40, a P3 groove 501 and a conductive electrode layer 601; wherein:

[0065] A light-transmitting substrate 101 on which a plurality of light-transmitting electrode layers 102 are disposed;

[0066] Insulating member 201, filled between adjacent light-transmitting electrode layers 102;

[0067] The conductive member 301 is disposed on the light-transmitting electrode layer 102 and in contact with the insulating member 201, wherein the height H2 of the contact portion between the conductive member 301 and the insulating member 201 is 50% of the maximum height H1 of the contact portion between the light-transmitting electrode layer 102 and the insulating member 201, and the maximum height of the light-transmitting electrode layer 102 and the height of the insulating member 201 are both equal to H1;

[0068] The combined layer 40 is disposed on the light-transmitting electrode layer 102 and the insulating member 201; the combined layer 40 includes, from bottom to top, a first carrier transport layer 401, a lower passivation layer 402, a perovskite layer 403 and a second carrier transport layer 405;

[0069] The conductive electrode layer 601 is disposed on the conductive member 301 and the second carrier transport layer 405 , and the upper surface of the conductive member 301 is flush with the upper surface of the second carrier transport layer 405 ;

[0070] The P3 groove 501 is etched from the conductive electrode layer 601 to the first carrier transport layer 401 of the combined layer 40 , and the bottom of the P3 groove 501 exposes the transparent electrode layer 102 . One P3 groove 501 is formed on each transparent electrode layer 102 .

[0071] Reference Figure 3 , the preparation method of the above-mentioned perovskite battery assembly includes:

[0072] 1) Prepare TCO conductive glass 10: Select FTO glass as TCO conductive glass 1010, and prepare it after cleaning, drying and ozone treatment, wherein the drying process is 100° C. for 5 minutes and the ozone treatment is for 15 minutes. The FTO glass includes a light-transmitting substrate 101 and a FTO film layer from bottom to top.

[0073] 2) Perform P1 laser scribing and P1.1 laser scribing: the P1.1 laser etching area is adjacent to the P1 laser etching area, forming a plurality of stepped light-transmitting electrode layers 102 with P1.1 scribing grooves, and a plurality of light-transmitting electrode layers 102 have P1 scribing grooves between them; wherein the P1 and P1.1 lasers use red picosecond lasers with a laser wavelength of 1064nm, and the width of the P1 scribing groove is 10um. The P1 scribing groove needs to cut the FTO film layer until the light-transmitting substrate 101 is exposed, the width of the P1.1 scribing groove is 10um, and the depth of the P1.1 scribing groove is half of the total thickness of the FTO film layer.

[0074] 3) Preparing an insulating member 201 at the P1 groove: At the P1 groove, a vacuum evaporation process is used to prepare an insulating member 201 made of an organic insulating gate material, with a height of 300 nm and a width of 10 um. The material used is acrylic.

[0075] 4) Preparing a conductive member 301 at the P1.1 groove: At the P1.1 groove, a conductive member 301 made of a silver alloy material is prepared by using a PVD magnetron sputtering process. The conductive member 301 has a height of 700 nm and a width of 10 um. The conductive member 301 protrudes from the light-transmitting electrode layer 102 .

[0076] 5) Preparing a first carrier transport layer 401 on the insulating member 201 and the light-transmitting electrode layer 102: Using a PVD magnetron sputtering process, a first carrier transport layer 401 is prepared on the insulating member 201 and the light-transmitting electrode layer 102. In this embodiment, NiO x The hole transport layer uses RF 1000W, and a metal mask is used in the process to achieve the required conductive gate pattern, and the film thickness is 10 to 20nm.

[0077] 6) Preparing a lower passivation layer 402 on the first carrier transport layer 401: Using a slit coating process, a lower passivation layer 402 is prepared on the first carrier transport layer 401, specifically, a SAM layer is prepared, the SAM material is Me-4PACz, and the solvent is ethanol.

[0078] 7) Preparing a perovskite layer 403 on the lower passivation layer 402: Preparing a perovskite layer 403 (PVK) on the lower passivation layer 402 by a slit coating process, wherein the perovskite material is FAPbI x Cl (1-x) , a mixed system of PbI / CsI / RbCl / PbBr / MAI FAI / MACl materials.

[0079] 8) Preparing a second carrier transport layer 405 on the perovskite layer 403: Specifically, C60 and SnO2 electron transport layers (ETL) are deposited respectively by vacuum evaporation process and ALD process, and a metal mask is used in the process to realize the desired conductive gate pattern; preferably, the upper surface of the ETL layer is controlled to be flush with the upper surface of the conductive member 301.

[0080] 9) Preparing a conductive electrode layer 601 on the second carrier transport layer 405 and the conductive member 301: On the ETL and the conductive member 301, a conductive electrode layer 601 (specifically, an ITO and Ag composite electrode layer) is prepared by a PVD magnetron sputtering process, and its lower layer overlaps the conductive member 301, wherein ITO is sputtered using a DC power supply, and Ag is also sputtered using a DC power supply.

[0081] 10) Perform P3 laser scribing from the conductive electrode layer 601 to the first carrier transport layer 401 of the combined layer 40 until the transparent electrode layer 102 is exposed: After sputtering the conductive electrode layer 601, perform P3 laser process from the conductive electrode layer 601 to the first carrier transport layer 401 of the combined layer 40 until the transparent electrode layer 102 is exposed, so that a P3 scribing groove 501 is formed on each transparent electrode layer 102, dividing the perovskite solar cell module into multiple series-connected sub-cell structures. The laser uses picosecond green light with a wavelength of 355nm.

[0082] 11) Laser cleaning of the film layer at the edge of the perovskite battery module: Finally, the P4 laser process is carried out to clean the film layer at the edge of the perovskite battery module. The laser selected is a picosecond green light with a wavelength of 1064nm.

[0083] In a possible implementation of the present application, refer to Figure 4 The present invention provides a perovskite battery assembly, which is a formal nip device, including a light-transmitting substrate 101, a light-transmitting electrode layer 102, an insulating member 201, a conductive member 301, a combination layer 40, a P3 groove 501 and a conductive electrode layer 601; wherein:

[0084] A light-transmitting substrate 101 on which a plurality of light-transmitting electrode layers 102 are disposed;

[0085] Insulating member 201, filled between adjacent light-transmitting electrode layers 102;

[0086] The conductive member 301 is disposed on the light-transmitting electrode layer 102 and in contact with the insulating member 201, wherein the height H2 of the contact portion between the conductive member 301 and the insulating member 201 is 50% of the height H1 of the light-transmitting electrode layer 102, and the maximum height of the light-transmitting electrode layer 102 and the height of the insulating member 201 are both equal to H1;

[0087] The combined layer 40 is disposed on the light-transmitting electrode layer 102 and the insulating member 201; the combined layer 40 includes, from bottom to top, a first carrier transport layer 401, a lower passivation layer 402, a perovskite layer 403, an upper passivation layer 404 and a second carrier transport layer 405;

[0088] The conductive electrode layer 601 is disposed on the conductive member 301 and the second carrier transport layer 405 , and preferably the upper surface of the conductive member 301 is flush with the upper surface of the second carrier transport layer 405 ;

[0089] The P3 groove 501 is etched from the conductive electrode layer 601 to the first carrier transport layer 401 of the combined layer 40 , and the bottom of the P3 groove 501 exposes the transparent electrode layer 102 . One P3 groove 501 is formed on each transparent electrode layer 102 .

[0090] The preparation method of the above-mentioned perovskite battery assembly includes:

[0091] 1) ITO glass is selected as TCO conductive glass 1010, and is prepared after being cleaned, dried, and treated with ozone, wherein the drying process is 100°C for 5 minutes and the ozone treatment is for 15 minutes. The ITO glass includes a light-transmitting substrate 101 and an ITO film layer from bottom to top.

[0092] 2) Perform P1 laser scribing and P1.1 laser scribing, and the P1.1 laser etched area is adjacent to the P1 laser etched area, forming a plurality of stepped light-transmitting electrode layers 102 with P1.1 scribing grooves, and a plurality of light-transmitting electrode layers 102 have P1 scribing grooves between them; wherein the P1 and P1.1 lasers use red light picosecond lasers with a laser wavelength of 1064nm, and the P1 scribing width is 10um. The P1 scribing groove needs to cut the ITO film layer until the light-transmitting substrate 101 is exposed, the P1.1 scribing groove width is 10um, and the P1.1 scribing groove depth is half of the total thickness of the ITO film layer.

[0093] 3) At the P1 groove, an insulating member 201 made of an organic insulating gate material is prepared by screen printing technology, with a height of 300 nm and a width of 10 um. The material used is acrylic.

[0094] 4) At the P1.1 groove, a silver alloy conductive member 301 with a height of 700 nm and a width of 10 um is prepared by screen printing. The conductive member 301 protrudes from the light-transmitting electrode layer 102 .

[0095] 5) A first carrier transport layer 401 (specifically a SnO 2 electron transport layer in this embodiment) is prepared on the insulating member 201 and the light-transmitting electrode layer 102 by using an ALD process, and the thickness of the SnO 2 film layer is 20 nm.

[0096] 6) A perovskite layer 403 (PVK) is prepared on the first carrier transport layer 401 by a slit coating process. The perovskite material is FAPbIxCl (1-x), which is a mixed system of PbI / CsI / RbCl / PbBr / MAI FAI / MACl materials.

[0097] 7) A second carrier transport layer 405 is prepared on the perovskite layer 403 by using a slit coating process, which is specifically a hole transport layer in this embodiment.

[0098] 8) The PVK and Spiro-OMeTAD materials above the conductive element 301 are etched using an oxygen plasma etching method. A metal mask is used during the process to protect the film layers in other areas.

[0099] 9) Using a magnetron sputtering process, a conductive electrode layer 601 is prepared on the conductive member 301 and the second carrier transport layer 405. The conductive electrode layer 601 is a composite electrode layer of ITO and Ag, and its lower layer overlaps the conductive member 301. ITO is sputtered using a DC power supply, and Ag is also sputtered using a DC power supply.

[0100] 10) After sputtering the conductive electrode layer 601, a P3 laser process is performed to etch from the conductive electrode layer 601 to the first carrier transport layer 401 of the combination layer 40 until the transparent electrode layer 102 is exposed, so that a P3 etched groove 501 is formed on each transparent electrode layer 102, dividing the perovskite solar cell module into multiple sub-cell structures connected in series. The laser uses picosecond green light with a wavelength of 355nm.

[0101] 11) Finally, a P4 laser process is performed to remove the film layer at the edge of the perovskite component, and the laser selected is a picosecond green light with a wavelength of 1064nm.

[0102] Example 3

[0103] This embodiment provides another Figure 2The method for preparing the perovskite battery assembly shown in the figure specifically comprises:

[0104] 1) Use Figure 5 The wet etching process shown forms the P1 line groove and the P1.1 line groove:

[0105] (1) Depositing a transparent electrode layer 102 on a transparent substrate 101 to obtain a TCO conductive glass 10: On the transparent substrate 101 substrate, a transparent electrode layer 102 (specifically an ITO conductive layer in this embodiment) is deposited by a PVD method to obtain a TCO conductive glass 10, which is used as a bottom electrode.

[0106] Coating photoresist on the TCO conductive glass 10: On the ITO conductive layer, a photoresist film layer is prepared by a slit coating method.

[0107] (3) Exposure and development are performed on the photoresist film layer to form patterns corresponding to the P1 groove and the P1.1 groove, wherein the P1 and P1.1 exposure processes are implemented using a half-engraved mask.

[0108] (4) Performing the first step of wet etching on the light-transmitting electrode layer 102 to form a P1 groove: Then performing the first step of wet etching on the ITO conductive layer to first form a P1 groove at the pattern position corresponding to the P1 groove.

[0109] (5) Cleaning and removing the photoresist on the pattern corresponding to the P1.1 groove: After the cleaning process, the photoresist on P1.1 is removed.

[0110] (6) Performing a second wet etching on the light-transmitting electrode layer 102 to form a P1.1 groove: After a second wet etching, a P1.1 groove is formed at a pattern position corresponding to the P1.1 groove.

[0111] (7) Cleaning off all photoresist: Finally, the photoresist is completely removed through the cleaning process. The width of the P1 groove and the P1.1 groove are both 10 um; the depth of the P1.1 groove is half of the depth of the P1 groove.

[0112] 2) At the P1 line groove, a SiO2 insulating gate is deposited by a CVD method, and a metal mask is used during the process to achieve the desired insulating gate pattern.

[0113] 3) At the P1.1 groove, a silver alloy conductive member 301 is prepared by magnetron sputtering process, and a metal mask is used in the process to realize the desired conductive gate pattern; the conductive member 301 protrudes from the light-transmitting electrode layer 102.

[0114] 4) A first carrier transport layer 401 is prepared on the insulating member 201 and the light-transmitting electrode layer 102 by using a PVD magnetron sputtering process. In this embodiment, the first carrier transport layer 401 is a NiOx hole transport layer. RF 1000W is used. A metal mask is used during the process to realize the desired conductive gate pattern.

[0115] 5) Using an inkjet printing process, a lower passivation layer 402 is prepared on the first carrier transport layer 401, specifically by coating a SAM layer, wherein the SAM material is selected as Me-4PACz.

[0116] 6) A perovskite layer 403 (PVK) is prepared on the lower passivation layer 402 by inkjet printing process. The perovskite material is FAPbIxCl (1-x), which is a mixed system of PbI / CsI / RbCl / PbBr / MAI FAI / MACl materials.

[0117] 7) On the PVK, a second carrier transport layer 405 is prepared, specifically by using a vacuum evaporation process and an ALD process to deposit C60 and SnO2 electron transport layers (ETL) respectively. During the process, a metal mask is used to achieve the desired conductive gate pattern, wherein the C60 film layer has a thickness of 10 nm and the SnO2 film layer has a thickness of 20 nm; preferably, the upper surface of the ETL layer is controlled to be flush with the upper surface of the conductive member 301.

[0118] 8) On the second carrier transport layer 405 and the conductive member 301, a conductive electrode layer 601 (specifically an ITO and Ag composite electrode layer) is prepared by a PVD magnetron sputtering process, and its lower layer overlaps the conductive member 301, wherein ITO is sputtered using a DC power supply, and Ag is also sputtered using a DC power supply.

[0119] 9) After sputtering the conductive electrode layer 601, a P3 laser process is performed to etch from the conductive electrode layer 601 to the first carrier transport layer 401 of the combination layer 40 until the transparent electrode layer 102 is exposed, so that a P3 etched groove 501 is formed on each transparent electrode layer 102, dividing the perovskite solar cell module into multiple sub-cell structures connected in series. The laser uses picosecond green light with a wavelength of 355nm.

[0120] 10) Finally, a P4 laser process is performed to remove the film layer at the edge of the perovskite battery module, and the laser selected is a picosecond green light with a wavelength of 1064nm.

[0121] The present invention provides a P1 laser optimization process to enhance the insulation performance of P1; adds a P1.1 etching process to improve the film forming quality of the film layer thereon and improve the PVK stability of the P1 groove position; adopts the design of the conductive part 301 electrode to reduce the contact resistance, expand the contact area of ​​the upper and lower electrodes, and improve the stability of the series device; the design of the insulating part 201 on the P1 groove and the design of the conductive part 301 on the P1.1 groove achieves close proximity between the conductive part 301 electrode and the P1 groove, and no longer needs to set a safety spacing for laser scribing, thereby reducing the dead zone area and improving the conversion efficiency of the perovskite component; the use of this process saves the P2 laser scribing process and replaces it with the conductive part 301 electrode, so that the series resistance is lower and the stability is better.

Claims

1. A perovskite battery assembly, characterized in that: It comprises a light-transmitting substrate, a plurality of insulating members and a plurality of sub-cells connected in series, each of the sub-cells comprises a light-transmitting electrode layer, a first carrier transport layer, a perovskite layer, a second carrier transport layer and a conductive electrode layer stacked in sequence, and the polarities of the carriers transported by the first carrier transport layer and the second carrier transport layer are opposite; wherein: The light-transmitting substrate is provided with the light-transmitting electrode layer of each sub-cell, and an insulating member is provided between the light-transmitting electrode layers of two adjacent sub-cells, and the insulating member is used to insulate the light-transmitting electrode layers of the two adjacent sub-cells.

2. The perovskite battery assembly according to claim 1, characterized in that: A P3 groove is provided between two adjacent sub-batteries, the P3 groove is carved from the conductive electrode layer to the first carrier transport layer, and the bottom of the P3 groove exposes the light-transmitting electrode layer; The perovskite battery assembly further includes a plurality of conductive members, each of which is provided between two adjacent sub-batteries, and the conductive member is located between the P3 groove and the insulating member; In any two adjacent sub-cells, the first end of the conductive member contacts the conductive electrode layer of the first sub-cell, and the second end of the conductive member contacts the light-transmitting electrode layer of the second sub-cell.

3. The perovskite battery assembly according to claim 2, characterized in that: The conductive member is in contact with the insulating member, and a height of the light-transmitting electrode layer is the same as a height of the insulating member.

4. The perovskite battery assembly according to claim 3, characterized in that: The height of the contact portion between the conductive member and the insulating member is defined as H2, the height of the light-transmitting electrode layer is defined as H1, and H2 is 40% to 60% of H1.

5. The perovskite battery assembly according to claim 4, characterized in that: The height H2 is 50% of the height H1.

6. The perovskite battery assembly according to claim 2, characterized in that: The material of the light-transmitting electrode layer is a fluorine-doped tin dioxide film material or an indium tin oxide film material; the maximum height of the light-transmitting electrode layer is 300-700 nm; And / or, the material of the conductive part includes one or more of aluminum alloy, silver alloy, copper alloy, magnesium alloy, gold metal, nickel metal, and titanium metal; the height of the conductive part is 500-800nm; the width of the conductive part is 5-10um; the material of the conductive electrode layer is Cu or Ag or ITO / Ag or IZO / Ag.

7. The perovskite battery assembly according to claim 1, characterized in that: The material of the insulating member is an inorganic insulating gate material or an organic insulating gate material; the inorganic insulating gate material is SiOx, SiNx, SiC, Al2O3 or ZnO; the organic insulating gate material is acrylic, polyimide, epoxy resin or polyester; the height of the insulating member is 200 to 600 nm; the width of the insulating member is 5 to 10 um; And / or, the material of the perovskite layer is FAPbI x Cl (1-x) .

8. The perovskite battery assembly according to claim 1, characterized in that: A lower passivation layer is provided between the first carrier transport layer and the perovskite layer, and an upper passivation layer is provided between the second carrier transport layer and the perovskite layer; When the perovskite battery component is a trans-pin device, the first carrier transport layer is a hole transport layer; the material of the lower passivation layer includes one or more of KCl, NaCl, and ZnO; and the second carrier transport layer is an electron transport layer; When the perovskite battery component is a formal NIP device, the first carrier transport layer is an electron transport layer; the lower passivation layer is a self-assembled molecular layer; the material of the upper passivation layer is iodinated phenylethylamine; and the second carrier transport layer is a hole transport layer.

9. A method for preparing a perovskite battery assembly, wherein the perovskite battery assembly is a formal nip device, characterized in that: The method comprises the following steps: (1) Selecting TCO conductive glass as a substrate, the substrate includes a light-transmitting base and a TCO conductive film from bottom to top; (2) using a wet etching process or a laser etching process on the TCO conductive glass to form a plurality of stepped light-transmitting electrode layers having P1.1 grooves, wherein the plurality of light-transmitting electrode layers have P1 grooves between them; When the laser etching process is adopted, P1 laser scribing and P1.1 laser scribing are performed on the TCO conductive glass separately or simultaneously, and the P1.1 laser etched area is adjacent to the P1 laser etched area; wherein the P1 laser etches the TCO conductive film until the transparent substrate is exposed; the P1.1 laser etches 40-60% of the total thickness of the TCO conductive film to form a P1.1 scribing groove adjacent to the P1 scribing groove; When the wet etching process is adopted, P1 wet etching and P1.1 wet etching are performed on the TCO conductive glass separately or simultaneously, and the P1.1 laser etching area is adjacent to the P1 laser etching area; wherein the P1 wet etching TCO conductive film is performed until the transparent substrate is exposed; the P1.1 wet etching TCO conductive film is performed by 40-60% of the total thickness, forming a P1.1 groove adjacent to the P1 groove; (3) Fill the P1 groove with insulating material to form an insulating member, so that the maximum height of the insulating member is the same as that of the light-transmitting electrode layer; (5) Fill the P1.1 groove with conductive material to form a conductive member protruding from the light-transmitting electrode layer; (6) preparing a composite layer on the light-transmitting electrode layer and the insulating member, including sequentially preparing a first carrier transport layer, a lower passivation layer, a perovskite layer, an upper passivation layer, and a second carrier transport layer; preferably, controlling the upper surface of the second carrier transport layer to be flush with the upper surface of the conductive member; (7) preparing a conductive electrode layer on the second carrier transport layer and the conductive member; (8) P3 laser scribing is then performed from the conductive electrode layer to the first carrier transport layer of the combined layer until the transparent electrode layer is exposed, so that a P3 scribing groove is formed on each transparent electrode layer, thereby obtaining a solar perovskite cell module.

10. A method for preparing a perovskite battery component, wherein the perovskite battery component is a trans-pin device, characterized in that: The method comprises the following steps: (1) Selecting TCO conductive glass as a substrate, the substrate includes a light-transmitting base and a TCO conductive film from bottom to top; (2) performing P1 laser scribing and P1.1 laser scribing on the TCO conductive glass separately or simultaneously, and the P1.1 laser etched area is adjacent to the P1 laser etched area, forming a plurality of step-shaped light-transmitting electrode layers with P1.1 scribing grooves, and the plurality of light-transmitting electrode layers have P1 scribing grooves between them; wherein the P1 laser etches the TCO conductive film until the light-transmitting substrate is exposed; and the P1.1 laser etches 40% to 60% of the total thickness of the TCO conductive film, forming a P1.1 scribing groove adjacent to the P1 scribing groove; (3) Fill the P1 groove with insulating material to form an insulating member, so that the maximum height of the insulating member is the same as that of the light-transmitting electrode layer; (5) Fill the P1.1 groove with conductive material to form a conductive member protruding from the light-transmitting electrode layer; (6) preparing a composite layer on the light-transmitting electrode layer and the insulating member, including sequentially preparing a first carrier transport layer, a lower passivation layer, a perovskite layer, and a second carrier transport layer, and controlling the upper surface of the second carrier transport layer to be flush with the upper surface of the conductive member; (7) preparing a conductive electrode layer on the second carrier transport layer and the conductive member; (8) P3 laser scribing is then performed from the conductive electrode layer to the first carrier transport layer of the combined layer until the transparent electrode layer is exposed, so that a P3 scribing groove is formed on each transparent electrode layer, thereby obtaining a solar perovskite cell module.

Images