Photoelectric device, preparation method thereof and display device

Abstract

The invention belongs to the technical field of photoelectric conversion, and particularly relates to a photoelectric device which comprises a first electrode, a functional layer and a second electrode which are sequentially arranged in a laminated mode, the photoelectric device further comprises a dielectric layer, the dielectric layer is arranged between the first electrode and the functional layer, and the material of the dielectric layer comprises a first material; the material of the functional layer comprises a second material; wherein charges carried by the first material are opposite to charges carried by the second material. The invention further relates to a preparation method of the photoelectric device and a display device. According to the technical scheme provided by the invention, the film layer uniformity of the functional layer of the photoelectric device can be improved, and the device performance of the photoelectric device is improved.

Description

Technical Field

[0001] The present application relates to the field of photoelectric conversion technology, and more specifically, to a photoelectric device and a preparation method and a display device thereof. Background Art

[0002] Solution processing technology has good development prospects because it does not require expensive vacuum equipment and can achieve low-cost, large-area, large-scale, and high-efficiency production of OLED and QLED displays. Among them, inkjet printing technology selectively deposits functional inks in corresponding pixels, which not only realizes the colorization of the display without a mask, but also greatly improves the utilization rate of materials. It is considered to be the most effective patterned film-forming technology to promote the industrialization of large-area flexible full-color displays.

[0003] However, in the process of solution processing and film formation, the liquid film needs to be dried and formed into a film, which determines the quality of the film. During inkjet printing, when multiple layers of liquid films are stacked in sequence, the uniformity of the functional layer will become lower and lower, thereby affecting the device performance of the optoelectronic device. Summary of the invention

[0004] The technical problem to be solved by the embodiments of the present application is that the film uniformity in the existing inkjet printing preparation process is poor, which affects the luminous area and luminous intensity of the optoelectronic device.

[0005] In order to solve the above technical problems, the present application provides an optoelectronic device, which adopts the following technical solution:

[0006] A photoelectric device, comprising a first electrode, a functional layer and a second electrode stacked in sequence, the photoelectric device further comprising:

[0007] a dielectric layer, the dielectric layer being disposed between the first electrode and the functional layer, wherein the material of the dielectric layer comprises a first material;

[0008] The material of the functional layer includes a second material;

[0009] The charge carried by the first material is opposite to the charge carried by the second material.

[0010] Furthermore, the first material or the second material is independently selected from one of positively charged porous graphene, negatively charged porous graphene, positively charged polydiallyldimethylammonium chloride, and negatively charged sodium polystyrene sulfonate.

[0011] Furthermore, the thickness of the dielectric layer ranges from 1 to 2 nm;

[0012] And / or, the set mass ratio is in the range of 0.5 to 2 wt %.

[0013] Further, the functional layer includes at least one layer;

[0014] Optionally, when the number of the functional layer is one layer, the charge carried by the first material is opposite to the charge carried by the second material;

[0015] Optionally, when the functional layer includes at least a first functional layer and a second functional layer, wherein the first functional layer is close to the dielectric layer, the electrical property of the first functional layer is opposite to that of the dielectric layer, and the electrical property of the second functional layer is the same as that of the dielectric layer.

[0016] Further, the functional layer includes a light-emitting layer, and the material of the light-emitting layer includes one or more of an organic light-emitting material and a quantum dot light-emitting material, and the organic light-emitting material includes one or more of 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing covalent bonds of BN, hybrid localized charge transfer excited state materials, exciplex light-emitting materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives;The quantum dot luminescent material includes one or more of a single structure quantum dot, a core-shell structure quantum dot and a perovskite semiconductor material. The material of the single structure quantum dot, the core material of the core-shell structure quantum dot and the shell material of the core-shell structure quantum dot are independently selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds and I-III-VI group compounds. The II-VI group compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, H One or more of CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the IV-VI group compound includes SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, Pb STe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, the III-V group compound includes GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, Ga One or more of AlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb, the I-III-VI group compound includes one or more of CuInS2, CuInSe2 and AgInS2; the perovskite semiconductor material includes a doped or undoped inorganic perovskite semiconductor or an organic-inorganic hybrid perovskite semiconductor, the inorganic perovskite semiconductor has a general structural formula of AMX3, wherein A is a Cs+ ion, and M is a divalent metal cation, including Pb; 2+ Sn 2+ , Cu 2+ 、Ni 2+、Cd 2+ Cr 2+ , Mn 2 + 、Co 2+ , Fe 2+ 、Ge2+、Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation, including CH3(CH2) n-2 NH 3+ or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ 、Ge2+、Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of;

[0017] Optionally, the functional layer further includes an electronic functional layer, the electronic functional layer is arranged between the light-emitting layer and the dielectric layer or between the light-emitting layer and the second electrode, the electronic functional layer includes an electron transport layer and an electron injection layer, when the device includes both an electron transport layer and an electron injection layer, the electron injection layer is arranged closer to the dielectric layer or the second electrode; the material of the electron transport layer includes but is not limited to at least one of metal oxides, doped metal oxides, II-VI semiconductor materials, III-V semiconductor materials and I-III-VI semiconductor materials, the metal oxide is selected from ZnO, BaO , TiO2, SnO2; the metal oxide in the doped metal oxide is selected from at least one of ZnO, TiO2, SnO2, the doping element is selected from at least one of Al, Mg, Li, In, Ga, the II-VI semiconductor material is selected from at least one of ZnS, ZnSe, CdS; the III-V semiconductor material is selected from at least one of InP and GaP; the I-III-VI semiconductor material is selected from at least one of CuInS and CuGaS; the material of the electron injection layer includes but is not limited to at least one of cesium carbonate, cesium fluoride, cesium azide and lithium fluoride;

[0018] Optionally, the functional layer further includes a hole functional layer, and the hole functional layer is arranged between the light-emitting layer and the dielectric layer or between the light-emitting layer and the second electrode; the hole functional layer includes a hole transport layer and a hole injection layer, and when the device includes both a hole transport layer and a hole injection layer, the hole injection layer is arranged closer to the dielectric layer or the second electrode; the material of the hole transport layer includes but is not limited to 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4' -diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), polyaniline, polypyrrole, poly(p-phenylenevinylene), poly(phenylenevinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4- [phenylene vinylene] and poly [2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], copper phthalocyanine, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis (p-carbazolyl) -1,1'-biphenyl compounds, N,N,N',N'-tetraaryl benzidine, PEDOT:PSS and its derivatives, poly (N-vinyl carbazole) and its derivatives, poly methacrylate and its derivatives, poly (9,9-octylfluorene) and its derivatives, poly (spirofluorene) and its derivatives, N,N'-di (naphthalene-1-yl) -N,N'-diphenyl benzidine, spiro NPB, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped At least one of doped MoO3, doped or undoped WO3, doped or undoped V2O5, doped or undoped P-type gallium nitride, doped or undoped CrO3, and doped or undoped CuO; the material of the hole injection layer includes but is not limited to at least one of 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, PEDOT, PEDOT:PSS, PEDOT:PSS doped with s-MoO3 derivatives, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane, copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide and copper oxide.

[0019] In order to solve the above technical problems, the present application also provides a method for preparing an optoelectronic device, which adopts the following technical solution:

[0020] A method for preparing a photoelectric device comprises the following steps:

[0021] providing a substrate, and forming a first electrode on the substrate;

[0022] forming a dielectric layer on the first electrode, wherein the material of the dielectric layer includes a first material;

[0023] forming a functional layer on the dielectric layer, wherein the material of the functional layer includes a second material, and the charge carried by the first material is opposite to the charge carried by the second material;

[0024] A second electrode is formed on the functional layer to obtain a photoelectric device.

[0025] Furthermore, the step of forming a dielectric layer on the first electrode comprises the following steps:

[0026] Providing a first material, and disposing the first material on the first electrode to form a first material layer;

[0027] The first material layer is treated for uniformity by a uniform electric field and / or a uniform magnetic field, and the dielectric layer is formed after drying.

[0028] Furthermore, according to the method for preparing a photoelectric device according to claim 6, it is characterized in that the functional layer comprises at least a first functional layer and a second functional layer, and the step of forming the functional layer on the dielectric layer comprises the following steps:

[0029] forming the first functional layer on the dielectric layer, wherein the electrical property of the first functional layer is opposite to that of the dielectric layer;

[0030] The second functional layer is formed on the first functional layer, wherein the electrical property of the second functional layer is the same as the electrical property of the dielectric layer.

[0031] Further, the first material or the second material is independently selected from one of positively charged porous graphene, negatively charged porous graphene, positively charged polydiallyldimethylammonium chloride, and negatively charged sodium polystyrene sulfonate, wherein the positively charged porous graphene and the negatively charged porous graphene are prepared by the following steps:

[0032] Adding a liquid oxidant and a sulfate into the graphene oxide aqueous solution to form a first mixed solution;

[0033] Adding an acidic solution to the first mixed solution and adjusting the pH to a set pH value to obtain a second mixed solution;

[0034] Ultrasonic treatment is performed on the second mixed solution to form a graphene oxide dispersion;

[0035] The graphene oxide dispersion is subjected to ultraviolet treatment and then to dialysis treatment to obtain a negatively charged porous graphene dispersion;

[0036] After adding p-phenylenediamine to the negatively charged porous graphene dispersion, a reflux reaction is performed to obtain a positively charged porous graphene dispersion.

[0037] In order to solve the above technical problems, the embodiment of the present application further provides a display device, which adopts the following technical solution:

[0038] A display device, characterized in that the display device comprises the optoelectronic device as described above or an optoelectronic device prepared by the method for preparing the optoelectronic device as described above.

[0039] Compared with the prior art, the embodiments of the present application have the following beneficial effects:

[0040] The optoelectronic device provided in the embodiment of the present application includes a dielectric layer, and the functional layer is carried on the dielectric layer. By regularly arranging the molecules of the dielectric layer, the dielectric layer has good film uniformity, so that the functional layer carried on the dielectric layer can also obtain good film uniformity, thereby achieving the effect of improving the luminous area and luminous intensity of the optoelectronic device; in addition, the material of the dielectric layer includes a first material, the material of the functional layer includes a second material, and the charge carried by the first material is opposite to the charge carried by the second material, so that the electrical property of the functional layer close to the dielectric layer is opposite to the electrical property of the dielectric layer, and the attraction generated by the opposite charges between the first material and the second material is used to intervene in the film uniformity of the functional layer, thereby further improving the film uniformity and film density of the functional layer carried on the dielectric layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] In order to more clearly illustrate the scheme of the present application, a brief introduction is given below to the drawings required for use in the description of the embodiments. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0042] Figure 1 is a schematic structural diagram of an optoelectronic device according to an embodiment of the present application;

[0043] Figure 2 is a schematic diagram of the specific structure of the optoelectronic device of an embodiment of the present application;

[0044] Figure 3 is a schematic diagram of the specific structure of a second embodiment of the optoelectronic device of the embodiment of the present application;

[0045] Figure 4 It is a flow chart of a method for preparing a photoelectric device according to an embodiment of the present application.

[0046] Reference numerals:

[0047] 1. First electrode; 2. Second electrode; 3. Dielectric layer; 31. First dielectric layer; 32. Second dielectric layer; 33. Third dielectric layer; 34. Fourth dielectric layer; 4. Functional layer; 41. First functional layer; 42. Second functional layer; 43. Third functional layer; 44. Fourth functional layer; 5. Capping layer. DETAILED DESCRIPTION

[0048] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by technicians in the technical field of this application; the terms used in the specification of the application herein are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" and any variations thereof in the specification and claims of this application and the above-mentioned drawings are intended to cover non-exclusive inclusions. The terms "first", "second", etc. in the specification and claims of this application or the above-mentioned drawings are used to distinguish different objects, not to describe a specific order.

[0049] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0050] Embodiment 1 of the optoelectronic device of the present application

[0051] See also Figure 1 As shown, an embodiment of the present application provides a photoelectric device, including:

[0052] The first electrode 1, the functional layer 4 and the second electrode 2 are stacked in sequence. In the present embodiment, the photoelectric device is an upright photoelectric device, in which the first electrode 1 is an anode and the second electrode 2 is a cathode. In other embodiments, the photoelectric device can also be an inverted photoelectric device, in which the first electrode 1 is a cathode and the second electrode 2 is an anode.

[0053] In some embodiments, the photoelectric device further includes: a dielectric layer 3, wherein the dielectric layer 3 is disposed between the first electrode 1 and the functional layer 4, wherein the material of the dielectric layer 3 includes a first material; in this embodiment, the dielectric layer 3 is disposed on the anode, and the dielectric layer 3 can be a positive dielectric layer prepared from a first material with a positive charge, or can be a negative dielectric layer prepared from a first material with a negative charge.

[0054] In some embodiments, the material of the functional layer 4 includes a functional layer material and a second material.

[0055] The charge carried by the first material is opposite to the charge carried by the second material.

[0056] The optoelectronic device provided in the embodiment of the present application is provided with a dielectric layer 3 on the first electrode 1, and a functional layer 4 is carried on the dielectric layer 3. The material of the functional layer 4 includes a second material with a charge opposite to that of the first material, so that the electrical properties of the functional layer 4 close to the dielectric layer 3 are opposite to those of the dielectric layer 3. The first material and the second material are attracted by the opposite charges to intervene in the film uniformity of the functional layer 4, thereby improving the film uniformity and film density of the functional layer 4 carried on the dielectric layer 3.

[0057] In some embodiments, the functional layer 4 includes at least one layer.

[0058] Optionally, when the number of the functional layer 4 is one layer, the charge carried by the first material is opposite to the charge carried by the second material. Specifically, when the material of the dielectric layer 3 includes a first material with a positive charge, the material of the functional layer 4 includes a functional layer material and a second material with a negative charge; when the dielectric layer 3 includes a first material with a negative charge, the material of the functional layer 4 includes a functional layer material and a second material with a positive charge.

[0059] See also Figure 1 As shown, in this embodiment, the number of the functional layer 4 is one layer, the functional layer 4 is arranged between the dielectric layer 3 and the second electrode 2 , and the electrical property of the dielectric layer 3 is opposite to that of the functional layer 4 .

[0060] Optionally, when the functional layer 4 includes at least a first functional layer and a second functional layer, the first functional layer is close to the dielectric layer 3, the electrical property of the first functional layer is opposite to that of the dielectric layer, and the electrical property of the second functional layer is the same as that of the dielectric layer 3. Specifically, when the material of the dielectric layer 3 includes a first material with a positive charge, the material of the first functional layer includes a functional layer material and a second material with a negative charge, and the material of the second functional layer includes a functional layer material and a first material with a positive charge; when the material of the dielectric layer 3 includes a first material with a negative charge, the material of the first functional layer includes a functional layer material and a second material with a positive charge, and the material of the second functional layer includes a functional layer material and a first material with a negative charge.

[0061] See also Figure 2 As shown, in some embodiments, the number of the functional layers 4 is at least two, the electrical property of the dielectric layer 3 is opposite to the electrical property of the functional layer 4 close to the dielectric layer 3, and the electrical properties of the two adjacent functional layers 4 are opposite.

[0062] In this embodiment, the functional layer 4 includes a first functional layer 41, a second functional layer 42, a third functional layer 43 and a fourth functional layer 44 stacked on the dielectric layer 3; the electrical property of the dielectric layer 3 is opposite to that of the first functional layer 41, the electrical property of the first functional layer 41 is opposite to that of the second functional layer 42, the electrical property of the second functional layer 42 is opposite to that of the third functional layer 43, and the electrical property of the third functional layer 43 is opposite to that of the fourth functional layer 44.

[0063] In this embodiment, the photoelectric device is an upright photoelectric device, the first electrode 1 is an anode, the second electrode 2 is a cathode, the first functional layer 41 is a hole injection layer, the second functional layer 42 is a hole transport layer, the third functional layer 43 is a light-emitting layer, and the fourth functional layer 44 is an electron transport layer.

[0064] In some embodiments, the material of the dielectric layer 3 includes a first material with positive charge, the material of the hole injection layer includes a hole injection material and a second material with negative charge, and the hole transport layer, the light emitting layer, and the electron transport layer are all uncharged.

[0065] In other embodiments, the dielectric layer 3 is disposed on the first electrode 1 , and the material of the dielectric layer 3 includes a first material with positive charge.

[0066] The hole injection layer is disposed on the dielectric layer 3 . The electrical property of the dielectric layer 3 is opposite to that of the hole injection layer. The material of the hole injection layer includes a hole injection material and a second material with negative charge.

[0067] The hole transport layer is disposed on the hole injection layer. The electrical property of the hole injection layer is opposite to that of the hole transport layer. The material of the hole transport layer includes a hole transport material and a first material with positive charge.

[0068] The light-emitting layer is disposed on the hole transport layer. The electrical property of the hole transport layer is opposite to that of the light-emitting layer. The material of the light-emitting layer includes a light-emitting material and a second material with negative charge.

[0069] The electron transport layer is disposed on the light emitting layer. The electrical property of the light emitting layer is opposite to that of the electron transport layer. The material of the electron transport layer includes an electron transport material and a first material with positive charge.

[0070] The second electrode 2 is disposed on the electron transport layer.

[0071] The embodiment of the present application uses the attraction between the positively charged first material and the negatively charged second material between the dielectric layer 3 and the hole injection layer, and the attraction between the positively charged first material and the negatively charged second material between each functional layer 4 to perform traction, so that each functional layer 4 can be adjusted for thin film uniformity before preparation, so as to improve the thin film uniformity and film density of each functional layer 4, thereby further improving the luminous area and luminous intensity of the optoelectronic device.

[0072] In other embodiments, the dielectric layer 3 can also be a negative dielectric layer, the photoelectric device is a positive photoelectric device, the first electrode 1 is an anode, the second electrode 2 is a cathode, the first functional layer 41 is a hole injection layer, the second functional layer 42 is a hole transport layer, the third functional layer 43 is a light-emitting layer, and the fourth functional layer 44 is an electron transport layer.

[0073] The dielectric layer 3 is disposed on the first electrode 1 , and the material of the dielectric layer 3 includes a negatively charged first material.

[0074] The hole injection layer is disposed on the dielectric layer 3 , and the material of the hole injection layer includes a hole injection material and a second material with positive charges.

[0075] The hole transport layer is disposed on the hole injection layer, and the material of the hole transport layer includes a hole transport material and a first material with negative charges.

[0076] The light-emitting layer is disposed on the hole transport layer, and the material of the light-emitting layer includes a light-emitting material and a second material with positive charge.

[0077] The electron transport layer is disposed on the light emitting layer, and the material of the electron transport layer includes an electron transport material and a first material with negative charge.

[0078] In other embodiments, the photoelectric device can also be an inverted photoelectric device, wherein the first electrode 1 is a cathode, the second electrode 2 is an anode, the first functional layer 41 is an electron transport layer, the second functional layer 42 is a light-emitting layer, the third functional layer 43 is a hole transport layer, and the fourth functional layer 44 is a hole injection layer.

[0079] In some embodiments, a first material is arranged on the first electrode 1 to form a first material layer, which is then intervened by a uniform electric field or a uniform magnetic field. Since the first material is positively charged or negatively charged, the first material layer formed by the first material can be intervened by a uniform electric field or a uniform magnetic field to adjust the distribution uniformity and film density of the first material layer. In addition, the first material layer treated by the uniform electric field has a certain static electricity after drying to form a thin film. The dielectric layer 3 can further adjust the film uniformity and film density of the functional layer 4 on the carrier and the dielectric layer through electrostatic action.

[0080] In some embodiments, the thickness of the dielectric layer 3 is in the range of 1 to 2 nm, for example, any one of 1 nm, 1.5 nm, and 2 nm, or a range formed between any two values.

[0081] The dielectric layer 3 of the embodiment of the present application is set with the above-mentioned thickness so that the distribution uniformity of the first material can be adjusted through a uniform electric field or a uniform magnetic field, thereby improving the film uniformity and film density of the dielectric layer 3.

[0082] In some embodiments, the mass percentage of the second material in the material of the functional layer is 0.5-2wt%, for example, any one of 0.5wt%, 1wt%, 1.5wt%, 2wt% or a range formed between any two values.

[0083] The material of the functional layer 4 in the embodiment of the present application includes a second material with a set mass percentage so that the electrical properties of each functional layer 4 are opposite to those of the dielectric layer 3, so that the evenly distributed dielectric layer 3 can pull each functional layer 4 through the attraction between the first material and the second material due to the opposite electrical properties, thereby improving the thin film uniformity and film density of each functional layer 4 carried on the dielectric layer 3.

[0084] In some embodiments, the first material or the second material is independently selected from one of positively charged porous graphene, negatively charged porous graphene, positively charged polydiallyldimethylammonium chloride, and negatively charged sodium polystyrene sulfonate.

[0085] In this embodiment, when the first material adopts a positively charged porous graphene dispersion and the second material adopts a negatively charged porous graphene dispersion, the porous graphene retains the excellent conductivity and stability of graphene, and the presence of pores promotes the improvement of material transport efficiency, especially the atomic-level pores can play a role in screening ions / molecules of different sizes. When it is applied to the materials of the dielectric layer 3 and the functional layer 4, the gravitational effect between the first material and the second material is obvious, so that the dielectric layer 3 can intervene in the functional layer 4, thereby improving the film uniformity and film density of each functional layer 4.

[0086] In other embodiments, the first material may also be a positively charged polydiallyldimethylammonium chloride solution, and the second material may also be a negatively charged sodium polystyrene sulfonate solution.

[0087] In some embodiments, the hole injection material is selected from at least one of poly(3,4-ethylenedioxythiophene), poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (PEDOT:PSS), copper phthalocyanine, titanium phthalocyanine, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, 4,4',4'-tris[2-naphthylphenylamino]triphenylamine, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, a transition metal oxide or a transition metal sulfur compound, wherein the transition metal oxide is selected from at least one of NiOx, MoOx, WOx, CrOx or CuOx, and the transition metal sulfur compound is selected from at least one of MoSx, MoSex, WSx, WSex or CuSx.

[0088] In some embodiments, the hole transport material is selected from 1,2,4,5-tetrakis(trifluoromethyl) (TFB), poly(9,9-dioctylfluorene-co-N-(4-butylphenyl)diphenylamine), 3-hexyl substituted polythiophene, poly(9-vinylcarbazole), poly[bis(4-phenyl)(4-butylphenyl)amine], poly(N,N'-di(4-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine-co-9,9-dioctylfluorene), 4,4',4"-tri(carbazol-9-yl)tri Aniline, 4,4'-di(9-carbazole)biphenyl, N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid), doped or undoped graphene, C60, NiO, MoO3, WO3, V2O5, CrO3, CuO or at least one of P-type gallium nitride.

[0089] In some embodiments, the material of the light-emitting layer includes one or more of organic light-emitting materials and quantum dot light-emitting materials, and the organic material includes at least one of 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine-C2,N)iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine-C2,N)iridium, diaromatic anthracene derivatives, distyrene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials and DBP fluorescent materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives.The quantum dot material is selected from at least one of single-component quantum dots, core-shell quantum dots, inorganic perovskite quantum dots or organic-inorganic hybrid perovskite quantum dots; when the quantum dot material is selected from single-component quantum dots or core-shell quantum dots, the material of the single-component quantum dot, the material of the core of the core-shell quantum dot and the material of the shell of the core-shell quantum dot are independently selected from at least one of II-VI compounds, III-V compounds, IV-VI compounds or I-III-VI compounds, wherein the II-VI compounds are selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnT e. ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, C At least one of dHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe or HgZnSTe, the III - Group V compounds are selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlP As, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaIn The invention relates to at least one of PSb, InAlNP, InAlNAs, InAlNSb, InAlPAs or InAlPSb, the IV-VI group compound is selected from at least one of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe or SnPbSTe, and the I-III-VI group compound is selected from at least one of CuInS2, CuInSe2 or AgInS2.

[0090] In some embodiments, the electron transport material is selected from one or more of doped or undoped inorganic materials and organic materials; wherein the undoped inorganic material is selected from at least one of ZnO, TiO2, SnO2, Al2O3, GaO, Ga2O3, ZrO2, NiO, ZnS, ZnSe, CdS, InP, GaP, BaTiO3, Cs2CO3, Rb2CO3, RbBr, LiF, LiF / Yb, MgP, and MgF2; the doped inorganic material includes the undoped inorganic material and a doping element, and the doping element is selected from at least one of Mg, Ca, Li, Ga, Al, Co, Mn, Zr, W, Ti, and Y; the organic material is selected from at least one of polymethyl methacrylate and polyvinyl butyral.

[0091] In some embodiments, the material of the first electrode 1 and the second electrode 2 includes one or more of a metal, a carbon material, and a metal oxide, wherein the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene, and carbon fiber; the metal oxide includes a doped or undoped metal oxide, including one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, and AMO, or includes a doped or undoped transparent gold oxide. A composite electrode in which metal is sandwiched between metal oxides, the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2. In this embodiment, the first electrode 1 is an anode, the material of the anode is ITO, and the second electrode 2 is a cathode, the material of the cathode is Ag.

[0092] Please review Figure 2 As shown, in this embodiment, the optoelectronic device further includes a cap layer 5, and the cap layer 5 is disposed on the second electrode 2 to provide waterproof and sealed protection for the optoelectronic device.

[0093] Embodiment 2 of the optoelectronic device of the present application

[0094] See also Figure 3 As shown, the difference between this embodiment and embodiment 1 is that the number of the functional layers 4 is at least two, and the dielectric layer 3 is further arranged between each two adjacent functional layers 4, and the electrical properties of the dielectric layer 3 are opposite to the electrical properties of the corresponding functional layer 4 carried on the dielectric layer 3.

[0095] In some embodiments, the functional layer 4 includes a first functional layer 41, a second functional layer 42, a third functional layer 43 and a fourth functional layer 44 stacked on the dielectric layer 3, and the dielectric layer 3 includes a first dielectric layer 31, a second dielectric layer 32, a third dielectric layer 33 and a fourth dielectric layer 34;

[0096] The first dielectric layer 31 is disposed between the first electrode 1 and the first functional layer 41, and the electrical property of the first dielectric layer 31 is opposite to that of the first functional layer 41;

[0097] And / or, the second dielectric layer 32 is disposed between the first functional layer 41 and the second functional layer 42, and the electrical property of the second dielectric layer 32 is opposite to that of the second functional layer 42;

[0098] And / or, the third dielectric layer 33 is disposed between the second functional layer 42 and the third functional layer 43, and the electrical property of the third dielectric layer 33 is opposite to that of the third functional layer 43;

[0099] And / or, the fourth dielectric layer 34 is disposed between the third functional layer 43 and the fourth functional layer 44 , and the electrical property of the fourth dielectric layer 34 is opposite to that of the fourth functional layer 44 .

[0100] In this embodiment, the photoelectric device is a positive photoelectric device, the first electrode 1 is an anode, the second electrode 2 is a cathode, the first functional layer 41 is a hole injection layer, the second functional layer 42 is a hole transport layer, the third functional layer 43 is a quantum dot light-emitting layer, the fourth functional layer 44 is an electron transport layer, and the dielectric layer 3 includes a first dielectric layer 31, a second dielectric layer 32, a third dielectric layer 33 and a fourth dielectric layer 34.

[0101] The first dielectric layer 31 is arranged between the first electrode 1 and the hole injection layer. The electrical property of the first dielectric layer 31 is opposite to the electrical polarity of the hole injection layer. In the present embodiment, the first dielectric layer 31 is a positively charged dielectric layer, and the hole injection layer includes PEDOT:PSS material and 2 wt% of a negatively charged second material by mass.

[0102] The second dielectric layer 32 is arranged between the hole injection layer and the hole transport layer. The electrical property of the second dielectric layer 32 is opposite to that of the hole transport layer. In the present embodiment, the second dielectric layer 32 is a negative dielectric layer. The hole transport layer includes TFB material and 2 wt % of a second material with a positive charge.

[0103] The third dielectric layer 33 is arranged between the hole transport layer and the quantum dot light-emitting layer. The electrical property of the third dielectric layer 33 is opposite to that of the light-emitting layer. In the present embodiment, the third dielectric layer 33 is a positive dielectric layer. The light-emitting layer includes CdSeS / CdS / CdSe / ZnS quantum dot material and 2 wt% of the second material with a negative charge.

[0104] The fourth dielectric layer 34 is disposed between the light-emitting layer and the electron transport layer. The electrical property of the fourth dielectric layer 34 is opposite to that of the electron transport layer. In the present embodiment, the fourth dielectric layer 34 is a negative dielectric layer. The electron transport layer includes a ZnO material and 2 wt % of a second material with a positive charge.

[0105] The second electrode 2 is disposed on the electron transport layer.

[0106] In the embodiment of the present application, each functional layer 4 is carried by the dielectric layer 3, and is pulled by the gravitational force between the first material and the second material, so that each functional layer 4 can be adjusted for thin film uniformity before preparation, so as to improve the thin film uniformity and film density of each functional layer 4, thereby further improving the luminous area and luminous intensity of the optoelectronic device.

[0107] In some embodiments, the electrical properties of the first dielectric layer 31 , the second dielectric layer 32 , the third dielectric layer 33 and the fourth dielectric layer 34 may be the same or different, for example:

[0108] The first dielectric layer 31 , the second dielectric layer 32 , the third dielectric layer 33 , and the fourth dielectric layer 34 are all positive dielectric layers;

[0109] The first dielectric layer 31 , the second dielectric layer 32 and the third dielectric layer 33 are positive dielectric layers, and the fourth dielectric layer 34 is a negative dielectric layer;

[0110] The first dielectric layer 31 and the second dielectric layer 32 are positive dielectric layers, and the third dielectric layer 33 and the fourth dielectric layer 34 are negative dielectric layers;

[0111] The first dielectric layer 31 and the third dielectric layer 33 are positive dielectric layers, and the second dielectric layer 32 and the fourth dielectric layer 34 are negative dielectric layers;

[0112] The first dielectric layer 31 is a positive dielectric layer, and the second dielectric layer 32, the third dielectric layer 33 and the fourth dielectric layer 34 are negative dielectric layers;

[0113] The first dielectric layer 31 , the second dielectric layer 32 , the third dielectric layer 33 and the fourth dielectric layer 34 are all negative dielectric layers.

[0114] In other embodiments, the photoelectric device can also be an inverted photoelectric device, wherein the first electrode 1 is a cathode, the second electrode 2 is an anode, the first functional layer 41 is an electron transport layer, the second functional layer 42 is a quantum dot light-emitting layer, the third functional layer 43 is a hole transport layer, and the fourth functional layer 44 is a hole injection layer.

[0115] In other embodiments, the structure of the optoelectronic device can also be an anode, a first dielectric layer, a hole injection layer, a hole transport layer, a second dielectric layer, a quantum dot light-emitting layer, an electron transport layer, a cathode, and a capping layer stacked in sequence from bottom to top.

[0116] Among them, the first dielectric layer is a positive dielectric layer, the material of the hole injection layer includes hole injection material and a second material with a negative charge, the material of the hole transport layer includes hole transport material and a second material with a positive charge, the second dielectric layer is a positive dielectric layer, the material of the light-emitting layer includes light-emitting material and a second material with a negative charge, and the material of the electron transport layer includes electron transport material and a second material with a positive charge.

[0117] Embodiment 1 of the method for preparing the optoelectronic device of the present application

[0118] See also Figure 4 As shown, an embodiment of the present application provides a method for preparing a photoelectric device, which is used to prepare the photoelectric device as described above, comprising the following steps:

[0119] Step S100: providing a substrate, and forming a first electrode on the substrate.

[0120] Step S200: forming a dielectric layer on the first electrode.

[0121] In this embodiment, the dielectric layer includes a first material.

[0122] Step S300: forming a functional layer on the dielectric layer.

[0123] In this embodiment, the material of the functional layer includes a second material, and the charge carried by the first material is opposite to the charge carried by the second material.

[0124] Step S400, forming a second electrode on the functional layer to obtain a photoelectric device.

[0125] The optoelectronic device prepared by the method for preparing the optoelectronic device in the embodiment of the present application is provided with a dielectric layer on the first electrode, and the functional layer is carried on the dielectric layer, and the functional layer includes a second material with a charge opposite to that of the first material, so that the dielectric layer and the side of the dielectric layer in contact with the functional layer have opposite electrical properties, and the reaction between the first material and the second material is used to pull the functional layer to intervene in the uniformity of the thin film, thereby improving the uniformity and film density of the functional layer carried on the dielectric layer.

[0126] In this embodiment, after forming the first electrode on the substrate, the step S100 further includes the following steps:

[0127] The substrate is placed in an ultrasonic cleaning machine and cleaned using detergent, isopropyl alcohol and deionized water.

[0128] The cleaned substrate is placed in a UV-ozone cleaning machine for further cleaning.

[0129] After cleaning, the substrate is placed in a vacuum dust-free oven for baking.

[0130] In this embodiment, before step S200, the first material and the second material are further prepared, wherein the first material or the second material is independently selected from one of a positively charged porous graphene and a negatively charged porous graphene, wherein the positively charged porous graphene and the negatively charged porous graphene are prepared by the following steps:

[0131] A liquid oxidant and sulfate are added to the graphene oxide aqueous solution.

[0132] In this embodiment, the liquid oxidant is hydrogen peroxide, and the sulfate is ferrous sulfate solution.

[0133] Add acidic solution to adjust to the set pH value.

[0134] In this embodiment, the acidic solution is hydrochloric acid, and the set pH value ranges from 1 to 4, which provides a medium environment for etching and reducing the graphene oxide sheet.

[0135] The graphene oxide aqueous solution is subjected to ultrasonic treatment to form a graphene oxide dispersion.

[0136] In this embodiment, the power of the ultrasonic treatment is 50-100 kHz, and the duration of the ultrasonic treatment is 10 min-1 h, so as to reduce the agglomeration effect between particles in the graphene oxide aqueous solution and provide a good basis for forming uniform graphene.

[0137] The graphene oxide dispersion is subjected to ultraviolet treatment and then to dialysis treatment to form a negatively charged porous graphene dispersion as a negatively charged porous graphene dispersion.

[0138] In this embodiment, the power of the ultraviolet treatment is 1500W~3000W, and the duration of the ultraviolet treatment is 30s~70s. By using ultraviolet treatment to treat the graphene oxide dispersion, the ultraviolet treatment not only obtains porous graphene, but also realizes the reduction of graphene oxide. The color of the graphene solution changes from light gray and transparent to dark black, and the conductive properties of the graphene nanosheets change from insulating to conductive. As the degree of reduction deepens, the resistance gradually decreases, which simplifies the preparation steps of the negatively charged porous graphene solution.

[0139] In some embodiments, after the graphene oxide dispersion is subjected to ultraviolet treatment and then to dialysis treatment, the following steps are further included:

[0140] After adding p-phenylenediamine to the negatively charged porous graphene dispersion, a reflux reaction is performed to form a positively charged porous graphene dispersion as the positively charged porous graphene dispersion.

[0141] In this embodiment, the mass ratio of p-phenylenediamine to negatively charged porous graphene is 1:(5-20); the reflux reaction time is 12-24 hours; after the reflux reaction is completed, the solution is filtered and washed, and added to alcohol to obtain a positively charged porous graphene solution, which is used as a positively charged solution.

[0142] In this embodiment, the dielectric layer is a positively charged dielectric layer formed by placing a positively charged porous graphene dispersion on the first electrode by a solution method, and the step S200, the step of forming the dielectric layer on the first electrode, includes the following steps:

[0143] Providing a first material, and disposing the first material on the first electrode to form a first material layer;

[0144] In this embodiment, the first material is selected from a positively charged porous graphene dispersion.

[0145] The first material layer is treated for uniformity by a uniform electric field and / or a uniform magnetic field, and the dielectric layer is formed after drying.

[0146] In this embodiment, the positively charged porous graphene solution is inkjet printed on the first electrode to form a first material layer, and the dielectric layer is treated for uniformity by a uniform electric field and / or a uniform magnetic field, wherein the uniformity of the dielectric layer after treatment with the uniform electric field and the uniform magnetic field reaches 100%; and the first material layer is dried to form a dielectric layer.

[0147] The dielectric layer in the embodiment of the present application is intervened by a uniform electric field or a uniform magnetic field after forming a first material layer on the first electrode. Since the first material is a charged solution, the first material layer formed by the first material can be intervened by a uniform electric field or a uniform magnetic field to adjust the distribution uniformity and film density of the first material layer. In addition, the first material layer treated by the uniform electric field has a certain static electricity after drying to form a thin film. The dielectric layer can further adjust the film uniformity and film density of each functional layer through the electrostatic effect.

[0148] In some embodiments, the functional layer includes at least a first functional layer and a second functional layer, and the step S300, the step of forming the functional layer on the dielectric layer, includes the following steps:

[0149] forming the first functional layer on the dielectric layer, wherein the electrical property of the first functional layer is opposite to that of the dielectric layer;

[0150] The second functional layer is formed on the first functional layer, wherein the electrical property of the second functional layer is the same as the electrical property of the dielectric layer.

[0151] In this embodiment, the functional layer includes a first functional layer, a second functional layer, a third functional layer and a fourth functional layer.

[0152] In this embodiment, the photoelectric device is a positive photoelectric device, the first electrode is an anode, the second electrode is a cathode, the first functional layer is a hole injection layer, the second functional layer is a hole transport layer, the third functional layer is a quantum dot light-emitting layer, the fourth functional layer is an electron transport layer, and the dielectric layer is a positive dielectric layer.

[0153] The step S300, forming a functional layer on the dielectric layer, specifically includes the following steps:

[0154] The first functional layer is formed on the dielectric layer, wherein the electrical property of the dielectric layer is opposite to that of the first functional layer.

[0155] In this embodiment, PEDOT:PSS ink is inkjet printed on the dielectric layer to form the hole injection layer, wherein the PEDOT:PSS ink contains 2 wt % of the second material.

[0156] A second functional layer is formed on the first functional layer, wherein the electrical property of the first functional layer is opposite to that of the second functional layer.

[0157] In this embodiment, TFB ink is inkjet printed on the hole injection layer to form the hole transport layer, wherein the TFB ink contains 2 wt % of the first material.

[0158] A third functional layer is formed on the second functional layer, wherein the electrical property of the second functional layer is opposite to that of the third functional layer.

[0159] In this embodiment, quantum dot ink of a CdSeS / CdS / CdSe / ZnS quantum dot structure is inkjet printed on the hole transport layer to form the quantum dot light-emitting layer, wherein the quantum dot ink of the CdSeS / CdS / CdSe / ZnS quantum dot structure contains a second material with a mass percentage of 2wt%.

[0160] A fourth functional layer is formed on the third functional layer, wherein the electrical property of the third functional layer is opposite to that of the fourth functional layer.

[0161] In this embodiment, ZnO ink is inkjet printed on the quantum dot light-emitting layer to form the electron transport layer, wherein the ZnO ink contains 2 wt % of the first material.

[0162] The embodiment of the present application performs traction through the attraction between the dielectric layer and the hole injection layer and between the first material and the second material between each functional layer, so that the film uniformity of each functional layer can be adjusted before preparation, so as to improve the film uniformity and film density of each functional layer, thereby further improving the luminous area and luminous intensity of the optoelectronic device.

[0163] Step S400: forming a second electrode on the functional layer.

[0164] In this embodiment, the second electrode is a cathode, and the material of the cathode is Ag. Ag is evaporated on the electron transport layer to form a cathode layer.

[0165] In this embodiment, the step S400 further includes the following steps:

[0166] A cap layer is prepared on the cathode layer to obtain an optical device.

[0167] Embodiment 2 of the method for preparing the optoelectronic device of the present application

[0168] The difference between the preparation method provided in this embodiment and the preparation method of the light-emitting layer in Embodiment 1 is that in the preparation method of the functional layer in step S300, in some embodiments, the number of the functional layers is at least two, and a dielectric layer is provided between each two adjacent functional layers.

[0169] The step S300, forming a functional layer on the dielectric layer, comprises the following steps:

[0170] forming a functional layer on the dielectric layer, wherein the electrical property of the functional layer is opposite to that of the dielectric layer;

[0171] forming another dielectric layer on the functional layer;

[0172] Another functional layer is formed on the another dielectric layer, wherein the electrical property of the another functional layer is opposite to that of the another dielectric layer.

[0173] In this embodiment, the photoelectric device is an upright photoelectric device, the first electrode is an anode, the second electrode is a cathode, the first functional layer is a hole injection layer, the second functional layer is a hole transport layer, the third functional layer is a quantum dot light-emitting layer, the fourth functional layer is an electron transport layer, and the dielectric layer includes a first dielectric layer, a second dielectric layer, a third dielectric layer and a fourth dielectric layer.

[0174] The step S300, forming a functional layer on the dielectric layer, specifically includes the following steps:

[0175] The first functional layer is formed on the first dielectric layer, wherein the electrical property of the first dielectric layer is opposite to that of the first functional layer.

[0176] In this embodiment, the first dielectric layer is a positive dielectric layer, and PEDOT:PSS ink is inkjet printed on the dielectric layer to form the hole injection layer, wherein the PEDOT:PSS ink contains 2 wt % of the second material.

[0177] The second dielectric layer is formed on the first functional layer.

[0178] In this embodiment, the negatively charged porous graphene solution is inkjet printed on the first electrode to form a dielectric layer liquid film, and the dielectric layer liquid film is subjected to a uniform electric field and / or a uniform magnetic field, and is dried to form a second dielectric layer, wherein the second dielectric layer is a negatively charged dielectric layer.

[0179] The second functional layer is formed on the second dielectric layer, wherein the electrical property of the second dielectric layer is opposite to that of the second functional layer.

[0180] In this embodiment, TFB ink mixed with 2 wt % of the positive solution is inkjet printed on the second dielectric layer to form the hole transport layer, wherein the TFB ink contains 2 wt % of the second material.

[0181] The third dielectric layer is formed on the second functional layer.

[0182] In this embodiment, the positively charged porous graphene solution is inkjet printed on the second functional layer to form a dielectric layer liquid film, and the dielectric layer liquid film is subjected to a uniform electric field and / or a uniform magnetic field, and is dried to form a third dielectric layer, wherein the third dielectric layer is a positive dielectric layer.

[0183] The third functional layer is formed on the third dielectric layer, wherein the electrical property of the third dielectric layer is opposite to that of the third functional layer.

[0184] In this embodiment, quantum dot ink of a CdSeS / CdS / CdSe / ZnS quantum dot structure is inkjet printed on the third dielectric layer to form the quantum dot light-emitting layer, wherein the quantum dot ink of the CdSeS / CdS / CdSe / ZnS quantum dot structure contains a second material with a mass percentage of 2 wt%.

[0185] The fourth dielectric layer is formed on the third functional layer.

[0186] In this embodiment, the negatively charged porous graphene solution is inkjet printed on the third functional layer to form a dielectric layer liquid film, and the dielectric layer liquid film is subjected to a uniform electric field and / or a uniform magnetic field, and is dried to form a fourth dielectric layer, wherein the fourth dielectric layer is a negatively charged dielectric layer.

[0187] The fourth functional layer is formed on the fourth dielectric layer, wherein the electrical property of the fourth dielectric layer is opposite to that of the fourth functional layer.

[0188] In this embodiment, ZnO ink is inkjet printed on the fourth dielectric layer to form the electron transport layer, wherein the ZnO ink contains 2 wt % of the second material.

[0189] Compared with Example 1 of the method for preparing a photoelectric device, the embodiment of the present application carries each functional layer through a dielectric layer, and pulls the functional layer through the reaction between a positively charged solution and a negatively charged solution, so that the film uniformity of each functional layer can be adjusted before preparation, so as to improve the film uniformity and film density of each functional layer, thereby further improving the luminous area and luminous intensity of the photoelectric device.

[0190] The above scheme is further described below in conjunction with specific embodiments. The preferred embodiments of the present invention are described in detail as follows:

[0191] Embodiment 1:

[0192] ⑴Providing an anode layer;

[0193] (2) inkjet printing the positively charged porous graphene solution on the anode layer to form a first material layer, subjecting the first material layer to a uniform treatment by a uniform electric field and / or a uniform magnetic field, and performing a drying treatment to form a dielectric layer, wherein the dielectric layer is a positively charged dielectric layer with a thickness of 1 nm;

[0194] (3) Using a Dimatix printing device or a Panasonic RGB large printing device to inkjet print PEDOT:PSS ink on the dielectric layer, drying it in a vacuum drying oven to form a film, and annealing it at 230°C for 30 minutes under air conditions to form a hole injection layer, wherein the PEDOT:PSS ink contains 2wt% of negatively charged porous graphene by mass percentage, and the thickness of the hole injection layer is 100nm;

[0195] (4) Printing TFB ink on the hole injection layer using a Dimatix printer or a Panasonic RGB large printer, drying in a vacuum drying oven to form a film, and annealing at 200° C. for 30 min under N2 conditions to form a hole transport layer, wherein the thickness of the hole transport layer is 100 nm;

[0196] (5) Using a Dimatix printing device or a Panasonic RGB large printing device, a quantum dot ink of a CdSeS / CdS / CdSe / ZnS quantum dot structure is inkjet printed on the hole transport layer, dried in a vacuum drying oven to form a film, and annealed at 80° C. for 15 min under N2 conditions to form a quantum dot light-emitting layer, wherein the thickness of the quantum dot light-emitting layer is 50 nm;

[0197] (6) Using a Dimatix printing device or a Panasonic RGB large printing device to inkjet print ZnO ink on the quantum dot light-emitting layer, drying it in a vacuum drying oven to form a film, and annealing it at 100° C. for 15 minutes under N2 conditions to form the electron transport layer, wherein the thickness of the electron transport layer is 50 nm;

[0198] ⑺Transfer the printed device to a high vacuum evaporator or sputtering device to Ag is deposited at a rate of , as the cathode layer.

[0199] Example 2

[0200] The difference between this embodiment and embodiment 1 is only that:

[0201] In step (2), the dielectric layer is prepared using a negatively charged porous graphene solution, and the dielectric layer is a negatively charged dielectric layer;

[0202] In step (3), the PEDOT:PSS ink contains 2 wt% of positively charged porous graphene.

[0203] Example 3

[0204] The difference between this embodiment and embodiment 1 is only that:

[0205] In step (3), the PEDOT:PSS ink contains 0.5wt% of negatively charged porous graphene.

[0206] Example 4

[0207] The difference between this embodiment and embodiment 1 is that:

[0208] In step (3), the PEDOT:PSS ink contains 0.5wt% of negatively charged sodium polystyrene sulfonate.

[0209] Example 5

[0210] The difference between this embodiment and embodiment 1 is only that:

[0211] In step (2), the dielectric layer is prepared by using a positively charged polydiallyldimethylammonium chloride solution, and the dielectric layer is a positively charged dielectric layer;

[0212] In step (3), the PEDOT:PSS ink contains 2 wt% of negatively charged porous graphene.

[0213] Example 6

[0214] The difference between this embodiment and embodiment 1 is only that:

[0215] In the step (4), the TFB ink contains 2 wt% of positively charged porous graphene;

[0216] In the step (5), the quantum dot ink of the CdSeS / CdZnS / CdS / ZnS quantum dot structure contains 2 wt% of negatively charged porous graphene;

[0217] In the step (6), the ZnO ink contains 2 wt% of positively charged porous graphene.

[0218] Example 7

[0219] The difference between this embodiment and embodiment 1 is that this embodiment is an inverted photoelectric device, and the steps for preparing the photoelectric device are as follows:

[0220] Step (1), providing a cathode layer;

[0221] Step (2), inkjet printing the positively charged porous graphene solution on the cathode layer to form a dielectric layer liquid film, subjecting the dielectric layer liquid film to a uniform electric field and / or a uniform magnetic field, and performing a drying process to form a positively charged dielectric layer, wherein the dielectric layer has a thickness of 1 nm;

[0222] Step (3), inkjet printing ZnO ink on the quantum dot light-emitting layer, drying in a vacuum drying oven to form a film, and annealing at 100° C. for 15 min under N2 conditions to form the electron transport layer, wherein the ZnO ink contains 2 wt% of negatively charged porous graphene by mass percentage, and the thickness of the electron transport layer is 50 nm;

[0223] Step (4), inkjet printing a quantum dot ink of a CdSeS / CdS / CdSe / ZnS quantum dot structure on the hole transport layer, drying in a vacuum drying oven to form a film, and annealing at 80° C. for 15 min under N2 conditions to form a quantum dot light-emitting layer, wherein the thickness of the quantum dot light-emitting layer is 50 nm;

[0224] Step (5), printing TFB ink on the hole injection layer, drying in a vacuum drying oven to form a film, and annealing at 200° C. for 30 min under N2 conditions to form a hole transport layer, wherein the thickness of the hole transport layer is 100 nm;

[0225] Step (6), inkjet printing PEDOT:PSS ink on the dielectric layer, drying in a vacuum drying oven to form a film, and annealing at 230°C for 30 minutes under air conditions to form a hole injection layer, wherein the thickness of the hole injection layer is 100 nm;

[0226] Step ⑺, An ITO / Ag / ITO composite material is deposited on the electron transport layer at a rate of , as an anode layer.

[0227] Comparative Example 1

[0228] The only difference between Comparative Example 1 and Example 1 is that there is no step (2), and the hole injection material, hole transport material, quantum dot light-emitting layer material and electron transport material are all undoped.

[0229] Comparative Example 2

[0230] The only difference between this comparative example and Example 6 is that there is no step (2), and the hole injection material, hole transport material, quantum dot light-emitting layer material and electron transport material are all undoped.

[0231] Test result analysis:

[0232] The photoelectric devices prepared by the preparation methods of Examples 1 to 5 and Comparative Examples 1 and 2 were respectively driven by a constant current of 63.7 mA / cm2, and the electroluminescent efficiency (EQE) was measured by a JVL efficiency tester. The test results are shown in Table 1 below:

[0233] type Electroluminescent Efficiency (EQE) Example 1 24.2％ Example 2 23.7％ Example 3 22.1％ Example 4 21.8％ Example 5 24％ Example 6 28％ Example 7 23 Comparative Example 1 14％ Comparative Example 2 12％

[0234] Table 1

[0235] From the comparison of the electroluminescent efficiency of the upright photoelectric devices in the above-mentioned embodiments 1 to 6 and the comparative example 1, as well as the comparison of the electroluminescent efficiency of the inverted photoelectric devices in the above-mentioned embodiment 7 and the comparative example 2, it can be seen that by preparing a dielectric layer on the electrode layer and adding a charged solution with opposite polarity to the dielectric layer to the functional layer, the electroluminescent efficiency of the photoelectric device can be effectively improved.

[0236] From the comparison of the electroluminescent efficiency of the upright photoelectric devices of the above-mentioned embodiment 1 and embodiment 2, it can be known that both the positively charged dielectric layer and the negatively charged dielectric layer can play a role in improving the electroluminescent efficiency of the photoelectric device, and the electroluminescent efficiency improvement effect of the photoelectric device is similar.

[0237] From the comparison of the electroluminescent efficiency of the upright photoelectric devices of the above-mentioned Example 1 and Example 3, it can be seen that by increasing the mass ratio of the positive solution incorporated into the functional layer, the degree of intervention of the dielectric layer on the functional layer can be increased, thereby playing a role in improving the electroluminescent efficiency of the photoelectric device.

[0238] From the comparison of the electroluminescent efficiency of the upright photoelectric devices of the above-mentioned Examples 1 and 5, and Examples 3 and 4, it can be seen that the mass ratio of the positive solution incorporated into the functional layer is the same, different solutions with the same charge are used, and the degree of intervention of the dielectric layer on the functional layer is basically the same, which can all play a role in improving the electroluminescent efficiency of the photoelectric device.

[0239] By comparing the electroluminescent efficiency of the upright photoelectric devices of the above-mentioned Example 1 with that of Example 2 and Example 3, it can be seen that by preparing a dielectric layer on the electrode layer and adding a charged solution with a polarity opposite to that of the dielectric layer to the functional layer, the electroluminescent efficiency of the photoelectric devices can be improved for both quantum dot photoelectric devices and organic photoelectric devices.

[0240] In summary, the optoelectronic device of the embodiment of the present application adds a dielectric layer between the first electrode and the functional layer, and the molecules of the dielectric layer are regularly arranged to make the dielectric layer have good film uniformity, so that the functional layer carried on the dielectric layer can also obtain good film uniformity, thereby achieving the effect of improving the luminous area and luminous intensity of the optoelectronic device; in addition, a charged solution with a polarity opposite to that of the dielectric layer is added to the functional layer, so that the dielectric layer and the side of the dielectric layer that contacts the functional layer have opposite polarities, and the reaction between the positive solution and the negative solution is used to pull the functional layer to intervene in the film uniformity of the functional layer, further improving the film uniformity and film density of the functional layer carried on the dielectric layer, thereby improving the luminous performance of the optoelectronic device.

[0241] Obviously, the embodiments described above are only some embodiments of the present application, rather than all embodiments. The preferred embodiments of the present application are given in the accompanying drawings, but they do not limit the patent scope of the present application. The present application can be implemented in many different forms. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure of the present application more thorough and comprehensive. Although the present application is described in detail with reference to the aforementioned embodiments, for those skilled in the art, it is still possible to modify the technical solutions recorded in the aforementioned specific implementation methods, or to perform equivalent replacement of some of the technical features therein. Any equivalent structure made using the contents of the specification and drawings of this application, directly or indirectly used in other related technical fields, is similarly within the scope of patent protection of this application.

Claims

1. A photoelectric device, comprising a first electrode, a functional layer and a second electrode stacked in sequence, characterized in that: The optoelectronic device further comprises: a dielectric layer, the dielectric layer being disposed between the first electrode and the functional layer, wherein the material of the dielectric layer comprises a first material; The material of the functional layer includes a second material; The charge carried by the first material is opposite to the charge carried by the second material.

2. The optoelectronic device according to claim 1, characterized in that: The first material or the second material is independently selected from one of positively charged porous graphene, negatively charged porous graphene, positively charged polydiallyldimethylammonium chloride, and negatively charged sodium polystyrene sulfonate.

3. The optoelectronic device according to claim 1, characterized in that: The thickness of the dielectric layer is in the range of 1 to 2 nm; And / or, the mass percentage of the second material in the material of the functional layer is 0.5-2wt%.

4. The optoelectronic device according to claim 1, characterized in that: The functional layer comprises at least one layer; Optionally, when the number of the functional layer is one layer, the charge carried by the first material is opposite to the charge carried by the second material; Optionally, when the functional layer includes at least a first functional layer and a second functional layer, wherein the first functional layer is close to the dielectric layer, the electrical property of the first functional layer is opposite to that of the dielectric layer, and the electrical property of the second functional layer is the same as that of the dielectric layer.

5. The optoelectronic device according to any one of claims 1 to 4, characterized in that: The functional layer includes a light-emitting layer, the material of the light-emitting layer includes one or more of an organic light-emitting material and a quantum dot light-emitting material, and the organic light-emitting material includes 4,4'-Bis(N-carbazole)-1,1'-biphenyl: Tris[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazol-9-yl)triphenylamine : One or more of tris[2-(p-tolyl)pyridine iridium, diarylanthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited state materials, exciplex luminescent materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives;The quantum dot luminescent material includes one or more of a single structure quantum dot, a core-shell structure quantum dot and a perovskite semiconductor material. The material of the single structure quantum dot, the core material of the core-shell structure quantum dot and the shell material of the core-shell structure quantum dot are independently selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds and I-III-VI group compounds. The II-VI group compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, Zn STe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the IV-VI group compound includes SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, One or more of PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, the III-V group compound includes GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlN As, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb, the I-III-VI group compound includes one or more of CuInS2, CuInSe2 and AgInS2; the perovskite semiconductor material includes a doped or undoped inorganic perovskite semiconductor or an organic-inorganic hybrid perovskite semiconductor, and the general structural formula of the inorganic perovskite semiconductor is AMX3, wherein A is Cs; + ions, M is a divalent metal cation, including Pb 2 + Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation, including CH3(CH2) n-2 NH 3+ or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of; Optionally, the functional layer further includes an electronic functional layer, the electronic functional layer is arranged between the light-emitting layer and the dielectric layer or between the light-emitting layer and the second electrode, the electronic functional layer includes an electron transport layer and an electron injection layer, when the device includes both an electron transport layer and an electron injection layer, the electron injection layer is arranged closer to the dielectric layer or the second electrode; the material of the electron transport layer includes but is not limited to at least one of metal oxides, doped metal oxides, II-VI semiconductor materials, III-V semiconductor materials and I-III-VI semiconductor materials, the metal oxide is selected from ZnO, BaO , TiO2, SnO2; the metal oxide in the doped metal oxide is selected from at least one of ZnO, TiO2, SnO2, the doping element is selected from at least one of Al, Mg, Li, In, Ga, the II-VI semiconductor material is selected from at least one of ZnS, ZnSe, CdS; the III-V semiconductor material is selected from at least one of InP and GaP; the I-III-VI semiconductor material is selected from at least one of CuInS and CuGaS; the material of the electron injection layer includes but is not limited to at least one of cesium carbonate, cesium fluoride, cesium azide and lithium fluoride; Optionally, the functional layer further includes a hole functional layer, and the hole functional layer is arranged between the light-emitting layer and the dielectric layer or between the light-emitting layer and the second electrode; the hole functional layer includes a hole transport layer and a hole injection layer, and when the device includes both a hole transport layer and a hole injection layer, the hole injection layer is arranged closer to the dielectric layer or the second electrode; the material of the hole transport layer includes but is not limited to 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4' -diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), polyaniline, polypyrrole, poly(p-phenylenevinylene), poly(phenylenevinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4- [phenylene vinylene] and poly [2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], copper phthalocyanine, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis (p-carbazolyl) -1,1'-biphenyl compounds, N,N,N',N'-tetraaryl benzidine, PEDOT:PSS and its derivatives, poly (N-vinyl carbazole) and its derivatives, poly methacrylate and its derivatives, poly (9,9-octylfluorene) and its derivatives, poly (spirofluorene) and its derivatives, N,N'-di (naphthalene-1-yl) -N,N'-diphenyl benzidine, spiro NPB, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped At least one of doped MoO3, doped or undoped WO3, doped or undoped V2O5, doped or undoped P-type gallium nitride, doped or undoped CrO3, and doped or undoped CuO; the material of the hole injection layer includes but is not limited to at least one of 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, PEDOT, PEDOT:PSS, PEDOT:PSS doped with s-MoO3 derivatives, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane, copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide and copper oxide.

6. A method for preparing a photoelectric device, characterized in that: The following steps are involved: providing a substrate, and forming a first electrode on the substrate; forming a dielectric layer on the first electrode, wherein the material of the dielectric layer includes a first material; forming a functional layer on the dielectric layer, wherein the material of the functional layer includes a second material, and the charge carried by the first material is opposite to the charge carried by the second material; A second electrode is formed on the functional layer to obtain a photoelectric device.

7. The method for preparing a photoelectric device according to claim 6, characterized in that: The step of forming a dielectric layer on the first electrode comprises the following steps: Providing a first material, and disposing the first material on the first electrode to form a first material layer; The first material layer is treated for uniformity by a uniform electric field and / or a uniform magnetic field, and the dielectric layer is formed after drying.

8. The method for preparing a photoelectric device according to claim 6, characterized in that: The functional layer at least includes a first functional layer and a second functional layer, and the step of forming the functional layer on the dielectric layer includes the following steps: forming the first functional layer on the dielectric layer, wherein the electrical property of the first functional layer is opposite to that of the dielectric layer; The second functional layer is formed on the first functional layer, wherein the electrical property of the second functional layer is the same as the electrical property of the dielectric layer.

9. The method for preparing a photoelectric device according to claim 6, characterized in that: The first material or the second material is independently selected from one of positively charged porous graphene, negatively charged porous graphene, positively charged polydiallyldimethylammonium chloride, and negatively charged sodium polystyrene sulfonate, wherein the positively charged porous graphene and the negatively charged porous graphene are prepared by the following steps: Adding a liquid oxidant and a sulfate into the graphene oxide aqueous solution to form a first mixed solution; Adding an acidic solution to the first mixed solution and adjusting the pH to a set pH value to obtain a second mixed solution; Ultrasonic treatment is performed on the second mixed solution to form a graphene oxide dispersion; The graphene oxide dispersion is subjected to ultraviolet treatment and then to dialysis treatment to obtain a negatively charged porous graphene dispersion; After adding p-phenylenediamine to the negatively charged porous graphene dispersion, a reflux reaction is performed to obtain a positively charged porous graphene dispersion.

10. A display device, characterized in that: The display device comprises the optoelectronic device according to any one of claims 1 to 5 or the optoelectronic device prepared by the method for preparing the optoelectronic device according to any one of claims 6 to 9.

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