Photoelectric device, preparation method thereof and display device

Abstract

The invention discloses a photoelectric device, a preparation method thereof and a display device, and relates to the technical field of display. The photoelectric device comprises a first electrode, a light-emitting layer and a second electrode which are arranged in a stacked mode, materials of the light-emitting layer comprise quantum dots and a functional modifier, and the functional modifier comprises nylon. In the photoelectric device provided by the invention, the nylon can passivate defects on the surface of the quantum dot, so that the performance of the quantum dot material is improved; and the nylon increases the steric hindrance between the quantum dots, so that the agglomeration of the quantum dots can be prevented, the film-forming property of the light-emitting layer is improved, the stress of the film layer is reduced, and the cracking of the light-emitting layer is avoided.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to an optoelectronic device, a method for preparing the optoelectronic device, and a display device including the optoelectronic device. Background Art

[0002] Currently, the widely used optoelectronic devices are organic light-emitting diodes (OLEDs) and quantum dot light-emitting diodes (QLEDs). OLEDs have become the mainstream technology in the field of display technology due to their excellent display performance, such as self-luminescence, simple structure, ultra-thinness, fast response speed, wide viewing angle, low power consumption, and flexible display. QLEDs have the advantages of saturated color and adjustable wavelength of emitted light, and high quantum yield of photoluminescence and electroluminescence, and have become a strong competitor to OLEDs in recent years.

[0003] The structure of traditional OLED and QLED devices generally includes an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer and a cathode. Under the action of the electric field, the holes generated by the anode of the light-emitting diode and the electrons generated by the cathode move and are injected into the hole transport layer and the electron transport layer respectively, and finally migrate to the light-emitting layer. When the two meet in the light-emitting layer, energy excitons are generated, thereby exciting the light-emitting molecules and finally producing visible light.

[0004] At present, the luminous efficiency of optoelectronic devices is relatively low and needs to be further improved. Summary of the invention

[0005] In view of this, the present application provides an optoelectronic device, a method for preparing the optoelectronic device, and a display device including the optoelectronic device.

[0006] The embodiment of the present application is implemented as follows: an optoelectronic device includes a first electrode, a light-emitting layer, and a second electrode that are stacked together. The material of the light-emitting layer includes quantum dots and a functional modifier, and the functional modifier includes nylon.

[0007] Optionally, in some embodiments of the present application, the quantum dots are embedded in the gaps between adjacent functional modifiers; and / or

[0008] At least some of the quantum dots are linked to the functional modifier; and / or

[0009] The nylon includes aliphatic nylon.

[0010] Optionally, in some embodiments of the present application, the mass ratio of the quantum dots to the functional modifier is (5-30): (1-2); and / or

[0011] The quantum dot surface has unpaired ions, and the unpaired ions are connected to the functional modifier by adsorption bonding; and / or

[0012] The nylon includes nylon-11.

[0013] Optionally, in some embodiments of the present application, the average particle size of the quantum dots is 7nm to 15nm; and / or

[0014] The quantum dots include one or more of single structure quantum dots, core-shell structure quantum dots and perovskite semiconductor materials. The materials of the single structure quantum dots, the core materials of the core-shell structure quantum dots and the shell materials of the core-shell structure quantum dots are independently selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds and I-III-VI group compounds. The II-VI group compounds include one or more of ZnO, ZnS, ZnSe, ZnTe, ZnSeS, ZnSeTe and ZnSTe. The IV-VI group compounds include one or more of SnS, SnSe, SnTe, SnSeS, SnSeTe and SnSTe. The III-V group compounds include GaN, GaP, GaAs, GaSb, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, One or more of GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb, the I-III-VI group compound comprises one or more of CuInS2, CuInSe2 and AgInS2; the perovskite semiconductor material comprises a doped or undoped inorganic perovskite semiconductor or an organic-inorganic hybrid perovskite semiconductor, the inorganic perovskite semiconductor has a general structural formula of AMX3, wherein A is Cs + ions, M is a divalent metal cation, including Sn 2+ , Cu 2+ 、Ni 2 + Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br- ,I - One or more of; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMY3, wherein B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Sn 2+ , Cu 2+ 、Ni 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, Y is a halogen anion, including Cl - Br - ,I - One or more of .

[0015] Optionally, in some embodiments of the present application, the optoelectronic device further includes one or more of a first carrier functional layer and a second carrier functional layer, wherein the first carrier functional layer is arranged between the first electrode and the light-emitting layer, and the second carrier functional layer is arranged between the second electrode and the light-emitting layer;

[0016] The first carrier functional layer is a hole functional layer, and the second carrier functional layer is an electron functional layer; or, the second carrier functional layer is an electron functional layer, and the first carrier functional layer is a hole functional layer.

[0017] Optionally, in some embodiments of the present application, the first electrode and the second electrode each independently include one or more of a metal, a carbon material and a metal oxide; the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene and carbon fiber; the metal oxide includes a metal oxide electrode or a composite electrode in which a metal is arranged between doped or undoped transparent metal oxides, and the metal oxide electrode The material includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3 and AMO, and the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2; and / or

[0018] The material of the electronic functional layer includes one or more of a first doped metal oxide particle, a first undoped metal oxide particle, a IIB-VIA semiconductor material, a IIIA-VA semiconductor material and an IB-IIIA-VIA semiconductor material, the material of the first undoped metal oxide particle includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5, the metal oxide in the first doped metal oxide particle includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3, the doping element in the first doped metal oxide particle includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga, the IIB-VIA semiconductor material includes one or more of ZnS, ZnSe, and CdS, the IIIA-VA semiconductor material includes one or more of InP and GaP, and the IB-IIIA-VIA semiconductor material includes one or more of CuInS and CuGaS; and / or

[0019] The materials of the hole functional layer include 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green luminescent materials, 2,3 ,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylene vinylene), poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene [vinylene], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraaryl benzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinyl carbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-di(naphthalene-1-yl)-N,N'-diphenyl benzidine, spiro NPB, nano-polycrystalline diamond, microcrystalline cellulose and tetracyanoquinodimethane, doped graphene, undoped graphene, second doped metal oxide particles, the first One or more of the following: second non-doped metal oxide particles, metal sulfides, metal selenides and metal nitrides, the metal oxide in the second doped metal oxide particles and the metal oxide in the second non-doped metal oxide particles independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, V2O5, the doping elements in the second doped metal oxide particles include one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfide includes one or more of CuS, MoS3, WS3, the metal selenide includes one or more of MoSe3, WSe3, and the metal nitride includes P-type gallium nitride.

[0020] Accordingly, an embodiment of the present application further provides a method for preparing a photoelectric device, comprising:

[0021] Providing a photoelectric device preform, wherein the photoelectric device preform comprises a first electrode;

[0022] Providing a luminescent material solution, wherein the luminescent material solution comprises quantum dots, a functional modifier and a solvent, wherein the functional modifier comprises nylon, and disposing the luminescent material solution on the optoelectronic device preform to form a luminescent layer;

[0023] A second electrode is formed on the light-emitting layer to obtain a photoelectric device.

[0024] Optionally, in some embodiments of the present application, the nylon includes aliphatic nylon, and the aliphatic nylon includes nylon-11.

[0025] Optionally, in some embodiments of the present application, in the luminescent material solution, the mass concentration of the quantum dots is 10 mg / mL to 30 mg / mL; and / or

[0026] In the luminescent material solution, the mass concentration of the functional modifier is 1 mg / mL to 5 mg / mL; and / or

[0027] The solvent includes one or more of n-octane, dimethylformamide, ethanol, diethylene glycol monobutyl ether, trimethoxybutanol, triethylene glycol monobutyl ether, diethylene glycol dimethyl ether, ethanol, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, acetophenone, tetrahydrofuran, N,N-dimethylformamide, ethyl acetate, pyrrole, butyric acid, and cresol.

[0028] Optionally, in some embodiments of the present application, the method for preparing the luminescent material solution includes:

[0029] providing quantum dots and a solvent, mixing them, and obtaining a quantum dot solution;

[0030] A functional modifier is provided, wherein the functional modifier includes nylon, and the functional modifier is mixed with the quantum dot solution to obtain a luminescent material solution.

[0031] Optionally, in some embodiments of the present application, in the quantum dot solution, the mass concentration of the quantum dots is 10 mg / mL to 30 mg / mL; and / or

[0032] After the functional modifier and the quantum dot solution are mixed, heating is further included; the heating temperature is 100° C. to 160° C., and the heating time is 2 h to 5 h.

[0033] Optionally, in some embodiments of the present application, the optoelectronic device preform comprises a first electrode and a first carrier functional layer which are stacked; and / or

[0034] After forming the light-emitting layer, the method further comprises forming a second carrier functional layer and a second electrode on the light-emitting layer to obtain a photoelectric device; and / or

[0035] After the luminescent material solution is disposed on the photoelectric device preform, annealing is further performed; the annealing temperature is 100° C. to 150° C., and the time is 5 min to 20 min.

[0036] Correspondingly, an embodiment of the present application further provides a display device, which includes the above-mentioned optoelectronic device, or the optoelectronic device manufactured by the above-mentioned manufacturing method.

[0037] In the optoelectronic device provided in the present application, nylon can passivate defects on the surface of quantum dots, thereby improving the performance of the quantum dot material; and nylon increases the steric hindrance between quantum dots, which can prevent the agglomeration of quantum dots, improve the film-forming properties of the light-emitting layer, reduce the stress generated in the film layer, and avoid cracking of the light-emitting layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without paying any creative work.

[0039] Figure 1 is a schematic diagram of the structure of the optoelectronic device provided in an embodiment of the present application;

[0040] Figure 2 is a schematic structural diagram of another optoelectronic device provided in an embodiment of the present application;

[0041] Figure 3 is a flow chart of a method for preparing a photoelectric device provided in an embodiment of the present application;

[0042] Figure 4 is an AFM image of the film provided in Example 1 of the present application;

[0043] Figure 5 This is an AFM image of the thin film provided in Comparative Example 1 of the present application.

[0044] Reference numerals:

[0045] A first electrode 10 ; a light emitting layer 20 ; a second electrode 30 ; a first carrier functional layer 40 ; and a second carrier functional layer 50 . DETAILED DESCRIPTION

[0046] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0047] In this application, unless otherwise stated, directional words such as "upper" and "lower" generally refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. In addition, in the description of this application, the term "including" means "including but not limited to". The terms first, second, third, etc. are used only as labels and do not impose numerical requirements or establish an order.

[0048] In this application, "and / or" describes the association relationship of associated objects, indicating that there may be three relationships. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. A and B can be singular or plural.

[0049] In the present application, "at least one" means one or more, and "plurality" means two or more. "One or several", "at least one of the following" or similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b, or c", or "at least one of a, b, and c" can all mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, c can be single or multiple, respectively.

[0050] Various embodiments of the present application may be presented in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be understood as a rigid limitation on the scope of the present application; therefore, the range description should be considered to have specifically disclosed all possible sub-ranges and single numerical values ​​within the range. For example, the range description from 1 to 6 should be considered to have specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which apply regardless of the range. In addition, whenever a numerical range is indicated herein, it is meant to include any cited number (fractional or integer) within the indicated range.

[0051] At present, the spin coating method is often used to prepare the film layers of optoelectronic devices. In order to improve the performance of optoelectronic devices, an annealing step is added between the film layers during the preparation of optoelectronic devices to significantly improve the performance of optoelectronic devices. However, the luminescent layer after annealing is prone to cracking, resulting in a decrease in the luminous efficiency of the device, leakage current, and even the scrapping of the optoelectronic device.

[0052] The technical solution of this application is as follows:

[0053] First, see Figure 1 An embodiment of the present application provides an optoelectronic device, comprising a first electrode 10, a light-emitting layer 20, and a second electrode 30 which are stacked, wherein the material of the light-emitting layer 20 comprises quantum dots and a functional modifier connected to the surface of the quantum dots, wherein the functional modifier comprises nylon.

[0054] Nylon is a general term for polymers containing amide groups in the repeating units of the macromolecular main chain. It can be prepared by ring-opening polymerization of lactam or by polycondensation of diamine and dibasic acid. Due to the presence of amine and carboxyl groups, after polycondensation, the end groups of nylon include one carboxyl group and one amino group respectively.

[0055] It is understandable that after the preparation of quantum dots, there will be some unpaired ions on their surface, such as sulfur ions, selenium ions, etc.

[0056] In some embodiments, at least a portion of the quantum dots are linked to the functionality modifier.

[0057] The optoelectronic device provided by the present application comprises quantum dots and nylon connected to the surface of the quantum dots in the light-emitting layer 20, wherein the nylon has the excellent properties of nylon, and has high mechanical strength, good toughness, and high tensile and compressive strengths; the surface of the quantum dots has exposed unpaired ions, and the surface of the nylon has amino groups, which can form positive and negative charge adsorption bonds with the unpaired ions on the surface of the quantum dots, passivate the defects on the surface of the quantum dots, and thereby improve the performance of the quantum dot material; the nylon in the light-emitting layer 20 increases the steric hindrance between the quantum dots, prevents the agglomeration of the quantum dots, improves the film-forming property of the light-emitting layer 20, reduces the stress generated in the film layer, and avoids cracking of the light-emitting layer 20, thereby improving the luminous efficiency of the optoelectronic device.

[0058] When preparing the light-emitting layer, after the light-emitting film is deposited, the light-emitting film is in a strained state. If the direction of the bending deformation of the substrate caused by the film stress is distinguished, the stress can be divided into tensile stress and compressive stress. Tensile stress is when the light-emitting film is stretched outward by force, while the optoelectronic device is compressed inward and the surface of the light-emitting film is concave. Because of the tensile stress, the light-emitting film itself tends to shrink. If the tensile stress of the film layer exceeds the elastic limit of the light-emitting film, the light-emitting film will crack. Compressive stress is the opposite. The surface of the light-emitting film convexly expands. Under the action of compressive stress, the light-emitting film has a tendency to expand toward the surface. If the compressive stress reaches the limit, the light-emitting film will curl toward the inside of the substrate, causing the light-emitting film to bubble. The main sources of stress in the light-emitting film are external stress, thermal stress and internal stress. Among them, external stress is caused by external force applied to the light-emitting film, thermal stress is caused by the heat of the light-emitting film, such as annealing and other processes; internal stress is caused by the characteristics of the material of the light-emitting film. When nylon is introduced into the light-emitting layer, nylon itself has excellent mechanical strength and tensile and compressive properties, which can reduce the internal stress of the light-emitting film and resist the influence of external forces and heat. Nylon can also reduce the agglomeration of quantum dots, so that after external process treatments such as annealing, it can still maintain high softness and toughness, further reducing the stress of the light-emitting film.

[0059] In some embodiments, in the light-emitting layer 20, the mass of the quantum dots is greater than the mass of the functional modifier. It can be understood that in the light-emitting layer 20, the quantum dots are used as the main light-emitting material, and the functional modifier is used to modify the performance of the light-emitting layer 20.

[0060] Furthermore, in some embodiments, the mass ratio of the quantum dots to the functional modifier is (5-30):(1-2), for example, 8:1.2, 10:1.3, 12:1.4, 15:1.5, 18:1.6, 20:1.7, 25:1.8, 28:1.9, etc. Within the mass ratio range, it is beneficial for the functional modifier to fully passivate the defects of the quantum dots.

[0061] In some embodiments, the quantum dots are embedded in the gaps between adjacent functional modifiers. Unpaired ions on the surface of the quantum dots are adsorbed and bonded with the functional modifiers, and the quantum dots are embedded in the gaps between the functional modifiers, thereby increasing the steric hindrance between the quantum dots and preventing the agglomeration of the quantum dots.

[0062] In some embodiments, the nylon comprises aliphatic nylon.

[0063] Furthermore, the nylon includes nylon-11.

[0064] The monomer structure of nylon-11 is as follows:

[0065]

[0066] The structural formula of nylon-11 is as follows:

[0067]

[0068] It can be understood that a nylon-11 surface has a hanging amino group, and the amino group is adsorbed and bonded to the unpaired ions on the surface of the quantum dot. Therefore, a quantum dot surface may contain one or more nylon-11s. The chain length of nylon-11 is relatively long, so the quantum dot is equivalent to being embedded in the gap between adjacent nylon-11s.

[0069] In some embodiments, the material of the quantum dots includes one or more of single structure quantum dots, core-shell structure quantum dots and perovskite semiconductor materials.

[0070] The material of the single structure quantum dots, the core material of the core-shell structure quantum dots and the shell material of the core-shell structure quantum dots can be respectively selected from but not limited to one or more of the group II-VI compounds, group IV-VI compounds, group III-V compounds and group I-III-VI compounds. The II-VI group compounds include one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe. The IV-VI group compounds include one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compound includes one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb. The I-III-VI group compound includes one or more of CuInS2, CuInSe2 and AgInS2.

[0071] As an example, the core-shell structured quantum dots include one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS and InP / ZnSe / ZnS.

[0072] The perovskite semiconductor material includes a doped or undoped inorganic perovskite semiconductor, or an organic-inorganic hybrid perovskite semiconductor. The inorganic perovskite semiconductor has a general structural formula of AMX3, wherein A is Cs + ion, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion selected from Cl - Br - ,I - The general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation selected from CH3(CH2) n-2 NH3 + or

[0073] [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion selected from Cl - Br - ,I - One or more of the .

[0074] In some embodiments, the average particle size of the quantum dots is 7 nm to 15 nm, for example, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, 13 nm, 14 nm, etc.

[0075] In some embodiments, the thickness of the light emitting layer 20 is 20 nm to 60 nm, for example, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, etc.

[0076] In some embodiments, see Figure 2 The photoelectric device also includes one or more of a first carrier functional layer 40 and a second carrier functional layer 50, wherein the first carrier functional layer 40 is arranged between the first electrode 10 and the light-emitting layer 20, and the second carrier functional layer 50 is arranged between the second electrode 30 and the light-emitting layer 20.

[0077] In some embodiments, the first carrier functional layer 40 is a hole functional layer, and the second carrier functional layer 50 is an electron functional layer.

[0078] In some other embodiments, the second carrier functional layer 50 is an electron functional layer, and the first carrier functional layer 40 is a hole functional layer.

[0079] In some embodiments, the first electrode 10 and the second electrode 30 each independently include one or more of a metal, a carbon material and a metal oxide; the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene and carbon fiber; the metal oxide includes a metal oxide electrode or a composite electrode in which a metal is arranged between doped or undoped transparent metal oxides, and the material of the metal oxide electrode includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3 and AMO, and the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2. Here, “ / ” represents a stacked structure. For example, AZO / Ag / AZO represents a composite electrode including an AZO layer, an Ag layer and an AZO layer stacked in sequence.

[0080] In some embodiments, the electronic functional layer includes one or more of an electron injection layer and an electron transport layer.

[0081] In some embodiments, the hole functional layer includes one or more of a hole injection layer and a hole transport layer.

[0082] In some embodiments, the material of the electronic functional layer includes one or more of a first doped metal oxide particle, a first undoped metal oxide particle, a IIB-VIA semiconductor material, a IIIA-VA semiconductor material, and an IB-IIIA-VIA semiconductor material. The material of the first undoped metal oxide particle includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxide in the first doped metal oxide particle includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping element in the first doped metal oxide particle includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA semiconductor material includes one or more of ZnS, ZnSe, and CdS. The IIIA-VA semiconductor material includes one or more of InP and GaP. The IB-IIIA-VIA semiconductor material includes one or more of CuInS and CuGaS.

[0083] In some embodiments, the material of the hole functional layer includes 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(carbazolyl-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green luminescent Materials, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylenevinylene), poly(phenylenevinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1, 4-phenylene vinylene], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraaryl benzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinyl carbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-di(naphthalene-1-yl)-N,N'-diphenyl benzidine, spiro NPB, nano-polycrystalline diamond, microcrystalline cellulose and tetracyanoquinodimethane, doped graphene, undoped graphene, second doped metal oxide particles , one or more of a second undoped metal oxide particle, a metal sulfide, a metal selenide and a metal nitride, the metal oxide in the second doped metal oxide particle and the metal oxide in the second undoped metal oxide particle each independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, V2O5, the doping element in the second doped metal oxide particle includes one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfide includes one or more of CuS, MoS3, WS3, the metal selenide includes one or more of MoSe3, WSe3, and the metal nitride includes P-type gallium nitride.

[0084] In some embodiments, the thickness of the first electrode 10 is 40 nm to 100 nm, for example, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, etc.

[0085] In some embodiments, the thickness of the second electrode 30 is 20 nm to 50 nm, for example, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, etc.

[0086] In some embodiments, the thickness of the hole functional layer is 20 nm to 60 nm, for example, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, etc.

[0087] In some embodiments, the thickness of the electronic functional layer is 20 nm to 60 nm, for example, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, etc.

[0088] Second, see Figure 3 The present application also provides a method for preparing a photoelectric device, comprising:

[0089] S11, providing a photoelectric device preform, wherein the photoelectric device preform comprises a first electrode 10;

[0090] S12, providing a luminescent material solution, wherein the luminescent material solution includes quantum dots, a functional modifier and a solvent, wherein the functional modifier includes nylon, and disposing the luminescent material solution on the optoelectronic device preform to form a luminescent layer 20;

[0091] S13, forming a second electrode 30 on the light-emitting layer 20 to obtain a photoelectric device.

[0092] The preparation method of the optoelectronic device provided in the present application mixes quantum dots and functional modifiers to prepare the light-emitting layer 20. Nylon can bond with the groups on the surface of the quantum dots to passivate the defects of the quantum dots and avoid agglomeration of the quantum dots. Nylon also has excellent mechanical strength, tensile and compressive resistance, which can reduce the generation of internal stress in the light-emitting layer 20 and avoid cracking of the light-emitting layer 20.

[0093] In the S11:

[0094] In some embodiments, the optoelectronic device preform includes a first electrode 10 and a first carrier functional layer 40 which are stacked.

[0095] In some embodiments, after forming the light-emitting layer 20 , the method further includes forming a second carrier functional layer 50 and a second electrode 30 on the light-emitting layer 20 to obtain a photoelectric device.

[0096] In S12:

[0097] In some embodiments, the solvent includes one or more of n-octane, dimethylformamide, ethanol, diethylene glycol monobutyl ether, trimethoxybutanol, triethylene glycol monobutyl ether, diethylene glycol dimethyl ether, ethanol, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, acetophenone, tetrahydrofuran, N,N-dimethylformamide, ethyl acetate, pyrrole, butyric acid, and cresol.

[0098] In some embodiments, in the luminescent material solution, the mass concentration of the quantum dots is 10 mg / mL to 30 mg / mL, for example, 12 mg / mL, 15 mg / mL, 18 mg / mL, 20 mg / mL, 22 mg / mL, 25 mg / mL, 28 mg / mL, etc.

[0099] In some embodiments, in the luminescent material solution, the mass concentration of the functional modifier is 1 mg / mL to 5 mg / mL, for example, 1.5 mg / mL, 2 mg / mL, 2.5 mg / mL, 3 mg / mL, 3.5 mg / mL, 4 mg / mL, 4.5 mg / mL, etc.

[0100] In some embodiments, the method for preparing the luminescent material solution comprises:

[0101] S121, providing quantum dots and a solvent, mixing them, and obtaining a quantum dot solution;

[0102] S122, providing a functional modifier, wherein the functional modifier includes nylon, and mixing the functional modifier with the quantum dot solution to obtain a luminescent material solution.

[0103] In the S121:

[0104] In some embodiments, in the quantum dot solution, the mass concentration of the quantum dots is 10 mg / mL to 30 mg / mL, for example, 12 mg / mL, 15 mg / mL, 16 mg / mL, 18 mg / mL, 20 mg / mL, 22 mg / mL, 25 mg / mL, 26 mg / mL, 28 mg / mL, etc. Within the mass concentration range, the quantum dots are fully dissolved.

[0105] In said S122:

[0106] In some embodiments, after the functional modifier and the quantum dot solution are mixed, heating is further included.

[0107] Further, the heating temperature is 100° C. to 160° C., for example, 110° C., 120° C., 130° C., 140° C., 150° C., etc. The heating time is 2 h to 5 h, for example, 2.2 h, 2.5 h, 2.8 h, 3 h, 3.2 h, 3.5 h, 3.8 h, 4 h, 4.2 h, 4.5 h, 4.8 h, etc.

[0108] In some embodiments, after disposing the light-emitting material solution on the optoelectronic device preform, annealing is further included.

[0109] Further, the annealing temperature is 100°C to 150°C, for example, 102°C, 105°C, 108°C, 110°C, 112°C, 115°C, 118°C, 120°C, 122°C, 125°C, 128°C, 130°C, 132°C, 135°C, 138°C, 140°C, 142°C, 145°C, 148°C, etc. The annealing time is 5min to 20min, for example, 6min, 8min, 10min, 12min, 15min, 16min, 18min, etc.

[0110] In a third aspect, an embodiment of the present application further provides a display device, which includes the above-mentioned optoelectronic device.

[0111] The display device can be any electronic product with a display function, including but not limited to smart phones, tablet computers, laptops, digital cameras, digital video cameras, smart wearable devices, smart weighing electronic scales, car displays, televisions or e-book readers, among which smart wearable devices can be, for example, smart bracelets, smart watches, virtual reality (VR) helmets, etc.

[0112] The present application is described in detail below through specific embodiments. The following embodiments are only partial embodiments of the present application and are not limitations of the present application.

[0113] Example 1

[0114] This embodiment provides a photoelectric device, and the preparation method is as follows:

[0115] Provide ITO glass, wipe the ITO surface with a cotton swab dipped in a small amount of soapy water to remove impurities visible to the naked eye, then use deionized water, acetone, ethanol, and isopropanol for ultrasonic cleaning for 15 minutes, and then blow dry with nitrogen for standby use to obtain an ITO anode with a thickness of 110 nm;

[0116] 40 μL of 8 mg / mL TFB solution was pipetted with a pipette and slowly dripped onto the ITO anode for spin coating at a speed of 4000 rpm for 30 s. Annealing was then performed at a temperature of 150°C for 15 min to obtain a 70 nm hole functional layer.

[0117] The quantum dots with CdZnSeS as the core and ZnS as the shell were dissolved in n-octane to prepare a quantum dot solution with a concentration of 20 mg / mL, 8 mL of the quantum dot solution was weighed and mixed with 15 mg of nylon-11, and then stirred continuously at 150° C. for 3 h to obtain a luminescent material solution;

[0118] 50 μL was taken with a pipette and dropped on the hole functional layer for spin coating at a speed of 3000 rpm for 50 s, followed by annealing at a temperature of 120°C for 15 min to form a light-emitting layer with a thickness of 30 nm;

[0119] 40 μL of 25 mg / mL zinc oxide ethanol solution was taken with a pipette and placed on the light-emitting layer for spin coating at a speed of 3000 rpm for 30 s. The coating was annealed at 130° C. for 10 min to form an electronic functional layer with a thickness of 70 nm.

[0120] On the electronic functional layer, the Ag target is turned on. The cathode is formed by evaporation at a rate of 30 nm to a thickness of 30 nm;

[0121] Packaging to obtain optoelectronic devices.

[0122] Example 2

[0123] This embodiment is substantially the same as Embodiment 1, except that in this embodiment, the quantum dots with CdZnSeS as the core and ZnS as the shell are replaced with quantum dots with CdSeS as the core and ZnSe as the shell.

[0124] Example 3

[0125] This embodiment is substantially the same as Embodiment 1, except that in this embodiment, the quantum dots with CdZnSeS as the core and ZnS as the shell are replaced with CdSe quantum dots.

[0126] Example 4

[0127] This embodiment is substantially the same as embodiment 1, except that in this embodiment, 8 mL of quantum dot solution is weighed and mixed with 10 mg of nylon-11.

[0128] Example 5

[0129] This embodiment is substantially the same as embodiment 1, except that in this embodiment, 8 mL of quantum dot solution is weighed and mixed with 20 mg of nylon-11.

[0130] Example 6

[0131] This embodiment is substantially the same as Embodiment 1, except that the annealing temperature of the light emitting layer in this embodiment is 100°C.

[0132] Example 7

[0133] This embodiment is substantially the same as Embodiment 1, except that the annealing temperature of the light emitting layer in this embodiment is 150°C.

[0134] Example 8

[0135] This embodiment is substantially the same as Embodiment 1, except that the annealing time of the light-emitting layer in this embodiment is 5 minutes.

[0136] Example 9

[0137] This embodiment is basically the same as Embodiment 1, except that the annealing time of the light-emitting layer in this embodiment is 20 minutes.

[0138] Example 10

[0139] This embodiment is substantially the same as Embodiment 1, except that in this embodiment, an inverted photoelectric device is prepared in the order of cathode, electron functional layer, light emitting layer, hole functional layer and anode.

[0140] Comparative Example 1

[0141] This comparative example is substantially the same as Example 1, except that in this comparative example, the quantum dot solution is directly disposed on the hole functional layer to form a light-emitting layer.

[0142] Comparative Example 2

[0143] This comparative example is substantially the same as Example 1, except that in this comparative example, nylon-11 is replaced by nylon 6, and the mass of nylon 6 is 160 mg.

[0144] Comparative Example 3

[0145] This comparative example is basically the same as Example 10, except that in this comparative example, the quantum dot solution is directly disposed on the hole functional layer to form a light-emitting layer.

[0146] The light-emitting layer thin films in the optoelectronic devices in Examples 1 to 10 and Comparative Examples 1 to 3 were tested by AFM, and the AFM image of the light-emitting layer thin film in Example 1 was obtained as follows: Figure 4 As shown, the AFM image of the light-emitting layer film of Comparative Example 1 is as follows Figure 5As shown, the roughness of the light-emitting layer film in the optoelectronic devices in Examples 1 to 10 and Comparative Examples 1 to 3 was obtained. The test results are shown in Table 1.

[0147] The maximum external quantum efficiency EQE of the optoelectronic devices of Examples 1 to 10 and Comparative Examples 1 to 3 was measured. max And T95@1knit test, the test results are shown in Table 1.

[0148] Among them, the detection method of the maximum external quantum efficiency is:

[0149] The ratio of the number of electron-hole pairs injected into quantum dots to the number of emitted photons, expressed in %, is an important parameter for measuring the quality of electrophotoelectric devices and can be obtained by measuring with an EQE optical test instrument. The specific calculation formula is as follows:

[0150]

[0151] Where ηe is the light output coupling efficiency, ηr is the ratio of the number of recombined carriers to the number of injected carriers, χ is the ratio of the number of excitons that generate photons to the total number of excitons, and K R is the radiation process rate, K NR is the rate of the non-radiative process.

[0152] Test conditions: carried out at room temperature, air humidity is 30-60%.

[0153] The test method of T95@1k nit is:

[0154] The time required for the device to reduce its brightness to a certain percentage of the maximum brightness when driven by a constant current or voltage. The time it takes for the brightness to drop to 95% of the maximum brightness is defined as T95, and this life is the measured life. In order to shorten the test cycle, the device life test is usually carried out at high brightness by accelerating device aging, and the life under high brightness is obtained by fitting the extended exponential decay brightness attenuation fitting formula. For example, the life under 1000nit is calculated as T95@1000nit. The specific calculation formula is as follows:

[0155]

[0156] Among them, T95 L For lifespan at low brightness, T95 H is the measured lifetime under high brightness, L H To accelerate the device to the highest brightness, L L is 1000nit, A is the acceleration factor, and this experiment measured the lifespan of several groups of green QLED devices at rated brightness and found that the A value was 1.7.

[0157] Table 1

[0158]

[0159] From Table 1, we can see that:

[0160] From Examples 1 to 3, Comparative Examples 1 to 2, and Figure 4 and Figure 5 It can be seen that adding nylon-11 to the quantum dot solution to prepare the light-emitting layer is beneficial to passivating the defects of the quantum dots, improving the mechanical strength and toughness of the light-emitting layer, preventing the light-emitting layer from cracking, reducing the roughness of the light-emitting layer, improving the luminous efficiency of the optoelectronic device, and extending the service life of the optoelectronic device. Compared with doping nylon 6 into the quantum dot solution, nylon-11 can more effectively improve the photoelectric performance of the optoelectronic device. In Comparative Example 2, the mass of nylon is equal to the mass of the quantum dots. Since nylon is insulating, it will affect the performance of the optoelectronic device to a certain extent.

[0161] It can be seen from Example 1, Examples 4 to 5 and Comparative Example 1 that within the mass ratio range of quantum dots to nylon provided in the present application, the defects of quantum dots can be effectively passivated, the luminous efficiency of optoelectronic devices can be improved, and the service life of optoelectronic devices can be extended. At the same time, the roughness of the light-emitting layer can be reduced, and the cracking of the light-emitting layer can be improved;

[0162] It can be seen from Example 1, Examples 6 to 9 and Comparative Example 1 that after the mixed solution of quantum dots and nylon is set as a film layer, the annealing temperature and time have little effect on the roughness of the light-emitting layer and the performance of the optoelectronic device, and are effectively improved compared with Comparative Example 1;

[0163] It can be seen from Example 10 and Comparative Example 3 that for the inverted optoelectronic device and the light-emitting layer of the inverted optoelectronic device, nylon is used as a functional modifier to passivate the defects of the quantum dots, prevent quantum dots from agglomerating, improve the film-forming properties of the light-emitting layer, and avoid cracking of the light-emitting layer, thereby improving the luminous efficiency of the optoelectronic device and extending the service life of the optoelectronic device.

[0164] The optoelectronic devices and their preparation methods, and display devices provided in the embodiments of the present application are introduced in detail above. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the methods and core ideas of the present application. At the same time, for technical personnel in this field, according to the ideas of the present application, there will be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A photoelectric device, characterized in that: The invention comprises a first electrode, a light-emitting layer and a second electrode which are stacked. The material of the light-emitting layer comprises quantum dots and a function modifier, and the function modifier comprises nylon.

2. The optoelectronic device according to claim 1, characterized in that The quantum dots are embedded in the gaps between adjacent functional modifiers; and / or At least some of the quantum dots are linked to the functional modifier; and / or The nylon includes aliphatic nylon.

3. The optoelectronic device according to claim 2, characterized in that The mass ratio of the quantum dots to the functional modifier is (5-30): (1-2); and / or The quantum dot surface has unpaired ions, and the unpaired ions are connected to the functional modifier by adsorption bonding; and / or The nylon includes nylon-11.

4. The optoelectronic device according to claim 1, characterized in that The average particle size of the quantum dots is 7nm to 15nm; and / or The quantum dots include one or more of single structure quantum dots, core-shell structure quantum dots and perovskite semiconductor materials. The materials of the single structure quantum dots, the core materials of the core-shell structure quantum dots and the shell materials of the core-shell structure quantum dots are independently selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds and I-III-VI group compounds. The II-VI group compounds include one or more of ZnO, ZnS, ZnSe, ZnTe, ZnSeS, ZnSeTe and ZnSTe. The IV-VI group compounds include one or more of SnS, SnSe, SnTe, SnSeS, SnSeTe and SnSTe. The III-V group compounds include GaN, GaP, GaAs, GaSb, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, One or more of GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb, the I-III-VI group compound comprises one or more of CuInS2, CuInSe2 and AgInS2; the perovskite semiconductor material comprises a doped or undoped inorganic perovskite semiconductor or an organic-inorganic hybrid perovskite semiconductor, the inorganic perovskite semiconductor has a general structural formula of AMX3, wherein A is Cs + ions, M is a divalent metal cation, including Sn 2+ , Cu 2+ 、Ni 2+ Cr 2+ , Mn 2 + 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMY3, wherein B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Sn 2+ , Cu 2+ 、Ni 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, Y is a halogen anion, including Cl - Br - ,I - One or more of .

5. The optoelectronic device according to claim 1, wherein: The optoelectronic device further includes one or more of a first carrier functional layer and a second carrier functional layer, wherein the first carrier functional layer is arranged between the first electrode and the light-emitting layer, and the second carrier functional layer is arranged between the second electrode and the light-emitting layer; The first carrier functional layer is a hole functional layer, and the second carrier functional layer is an electron functional layer; or, the second carrier functional layer is an electron functional layer, and the first carrier functional layer is a hole functional layer.

6. The optoelectronic device according to claim 5, characterized in that The first electrode and the second electrode independently include one or more of a metal, a carbon material and a metal oxide; the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene and carbon fiber; the metal oxide includes a metal oxide electrode or a composite electrode in which a metal is arranged between doped or undoped transparent metal oxides, the material of the metal oxide electrode includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3 and AMO, and the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2; and / or The material of the electronic functional layer includes one or more of a first doped metal oxide particle, a first undoped metal oxide particle, a IIB-VIA semiconductor material, a IIIA-VA semiconductor material and an IB-IIIA-VIA semiconductor material, the material of the first undoped metal oxide particle includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5, the metal oxide in the first doped metal oxide particle includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3, the doping element in the first doped metal oxide particle includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga, the IIB-VIA semiconductor material includes one or more of ZnS, ZnSe, and CdS, the IIIA-VA semiconductor material includes one or more of InP and GaP, and the IB-IIIA-VIA semiconductor material includes one or more of CuInS and CuGaS; and / or The materials of the hole functional layer include 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green luminescent materials, 2,3 ,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylene vinylene), poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene [vinylene], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraaryl benzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinyl carbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-di(naphthalene-1-yl)-N,N'-diphenyl benzidine, spiro NPB, nano-polycrystalline diamond, microcrystalline cellulose and tetracyanoquinodimethane, doped graphene, undoped graphene, second doped metal oxide particles, the first One or more of the following: second non-doped metal oxide particles, metal sulfides, metal selenides and metal nitrides, the metal oxide in the second doped metal oxide particles and the metal oxide in the second non-doped metal oxide particles independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, V2O5, the doping elements in the second doped metal oxide particles include one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfide includes one or more of CuS, MoS3, WS3, the metal selenide includes one or more of MoSe3, WSe3, and the metal nitride includes P-type gallium nitride.

7. A method for preparing a photoelectric device, characterized in that: include: Providing a photoelectric device preform, wherein the photoelectric device preform comprises a first electrode; Providing a luminescent material solution, wherein the luminescent material solution comprises quantum dots, a functional modifier and a solvent, wherein the functional modifier comprises nylon, and disposing the luminescent material solution on the optoelectronic device preform to form a luminescent layer; A second electrode is formed on the light-emitting layer to obtain a photoelectric device.

8. The preparation method according to claim 7, characterized in that: The nylon includes aliphatic nylon, and the aliphatic nylon includes nylon-11.

9. The preparation method according to claim 7, characterized in that: In the luminescent material solution, the mass concentration of the quantum dots is 10 mg / mL to 30 mg / mL; and / or In the luminescent material solution, the mass concentration of the functional modifier is 1 mg / mL to 5 mg / mL; and / or The solvent includes one or more of n-octane, dimethylformamide, ethanol, diethylene glycol monobutyl ether, trimethoxybutanol, triethylene glycol monobutyl ether, diethylene glycol dimethyl ether, ethanol, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, acetophenone, tetrahydrofuran, N,N-dimethylformamide, ethyl acetate, pyrrole, butyric acid, and cresol.

10. The preparation method according to claim 7, characterized in that: The method for preparing the luminescent material solution comprises: providing quantum dots and a solvent, mixing them, and obtaining a quantum dot solution; A functional modifier is provided, wherein the functional modifier includes nylon, and the functional modifier is mixed with the quantum dot solution to obtain a luminescent material solution.

11. The preparation method according to claim 10, characterized in that: In the quantum dot solution, the mass concentration of the quantum dots is 10 mg / mL to 30 mg / mL; and / or After the functional modifier and the quantum dot solution are mixed, heating is further included; the heating temperature is 100° C. to 160° C., and the heating time is 2 h to 5 h.

12. The preparation method according to claim 7, characterized in that: The photoelectric device preform comprises a first electrode and a first carrier functional layer which are stacked; and / or After forming the light-emitting layer, the method further comprises forming a second carrier functional layer and a second electrode on the light-emitting layer to obtain a photoelectric device; and / or After the luminescent material solution is disposed on the photoelectric device preform, annealing is further performed; the annealing temperature is 100° C. to 150° C., and the time is 5 min to 20 min.

13. A display device, characterized in that: The invention comprises the optoelectronic device according to any one of claims 1 to 6, or the optoelectronic device prepared by the preparation method according to any one of claims 7 to 12.

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