Manufacturing Apparatus and Manufacturing Method for Chemical Solution for Semiconductor Manufacturing

Abstract

The present invention relates to the field of semiconductor processing. The present invention discloses a manufacturing apparatus and a manufacturing method for a chemical solution used in semiconductor manufacturing. The apparatus includes a tank, a gas flow path, a filter, and a bent portion that forms a part of the gas flow path; a liquid detection sensor that is disposed in the gas flow path closer to the tank side than the rising section and detects liquid immersed in the gas flow path; and a mechanism that, when the liquid detection sensor detects the liquid, performs at least one of discharging the liquid immersed in the gas flow path, interrupting the injection of the liquid into the tank, and closing the gas flow path, so as to solve the problem of mesh blockage of the filter in the gas flow path for gas-liquid exchange.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor processing, and more particularly to an apparatus and a method for manufacturing a chemical solution for semiconductor manufacturing. Background Art

[0002] There are known manufacturing apparatuses (see Patent Documents 1 and 2) for manufacturing chemical solutions for semiconductor manufacturing (hereinafter simply referred to as chemical solutions) used in semiconductor manufacturing processes such as cleaning solutions for cleaning semiconductor wafers. In semiconductor manufacturing processes, circuit patterns including metal wirings and insulating films are formed on the surface of a semiconductor wafer by repeatedly performing processes such as film formation, exposure, etching, and planarization on the surface of the semiconductor wafer. Planarization is carried out, for example, by CMP (Chemical Mechanical Polishing). The cleaning solution is used, for example, to remove residues remaining on the surface of the semiconductor wafer after CMP.

[0003] In recent years, the miniaturization of semiconductor elements has been continuously progressing, and quality management in semiconductor manufacturing processes has become extremely strict. Since the cleaning effect of the cleaning solution is also a factor affecting the quality of semiconductor elements, quality management of chemical solutions such as cleaning solutions is also very important. Patent Documents 1 (CN115138229B) and 2 (CN115178120B) disclose the following techniques: In the manufacturing process of a chemical solution, accurate concentration management is performed when mixing a plurality of liquids as raw materials to produce a cleaning solution. Specifically, an overflow mechanism for discharging a liquid exceeding a set liquid level height is provided in a mixing tank for mixing a plurality of liquids, and the input amount of the liquid to be input is controlled by the overflow mechanism.

[0004] As described above, in the manufacturing process of a chemical solution, a tank for accommodating a liquid is used for various purposes. When injecting a liquid into the tank and discharging the liquid from the tank, in order to perform gas-liquid exchange, it is necessary to introduce and discharge gas into and from the tank. Therefore, a gas flow path for allowing gas to flow is provided in the tank. One end of this gas flow path for gas-liquid exchange is connected to a space above the liquid level in the tank, and the other end is open to the outside. Further, a filter is provided in the gas flow path, and the filter is used to remove particles as impurities from the gas sucked from the open end.

[0005] In a manufacturing apparatus for a chemical solution having such a tank, there is a case where a liquid that has become bubbly near the liquid level in the tank infiltrates into the gas flow path, and the infiltrated liquid flows through the gas flow path and adheres to the filter, resulting in clogging of the mesh in the filter.

[0006] When mesh clogging occurs in the filter, the following situations will occur: Gas-liquid exchange cannot be properly performed, resulting in various problems. For example, when gas cannot be properly introduced into the tank, the inside of the tank will become negative pressure, and poor discharge of liquid from the tank will occur. In addition, when gas cannot be properly discharged from the tank, the positive pressure inside the tank becomes too high, and poor injection of liquid will occur. When such poor discharge or injection of liquid occurs, there is a possibility that the concentration of the liquid medicine is unstable, etc., affecting the quality of the liquid medicine. In addition, when the manufacturing device continues to operate in a state where the filter has mesh clogging, it is also possible that the pressure change inside the tank becomes large, applying unnecessary loads to various parts of the manufacturing device such as the tank and the pump, which may cause failures. Therefore, it is necessary to take countermeasures against the problems caused by mesh clogging of this filter. Summary of the Invention

[0007] The main object of the present application is to provide a manufacturing device and a manufacturing method for a liquid medicine used in semiconductor manufacturing, so as to solve the problem of mesh clogging of the filter in the gas flow path for gas-liquid exchange.

[0008] To achieve the above object, in a first aspect, the present application provides a manufacturing device for a liquid medicine used in semiconductor manufacturing, including:

[0009] A tank that accommodates at least one liquid as a raw material of the liquid medicine and performs injection and discharge of the liquid;

[0010] A gas flow path, one end of which is connected to the tank and the other end is open to the outside, and is used for introducing and discharging gas into and from the tank when injecting and discharging the liquid;

[0011] A filter provided in the gas flow path for filtering the gas inhaled or discharged from the open end of the gas flow path;

[0012] A bent portion that forms a part of the gas flow path, including a descending section that descends as it approaches the filter in the direction from the tank to the filter, and an ascending section that ascends as it approaches the filter after the descending section;

[0013] A liquid detection sensor provided on the tank side of the gas flow path closer to the tank than the ascending section for detecting the liquid immersed in the gas flow path; and

[0014] A mechanism that, when the liquid detection sensor detects the liquid, performs at least one of discharging the liquid immersed in the gas flow path, interrupting the injection of the liquid into the tank, and closing the gas flow path.

[0015] Optionally, the mechanism includes a liquid discharging mechanism that discharges the liquid immersed in the gas flow path when the liquid detection sensor detects the liquid.

[0016] Optionally, the liquid discharging mechanism includes a liquid discharging flow path that is connected to the gas flow path between the liquid detection sensor and the filter.

[0017] Optionally, the liquid discharging flow path is connected to the bent portion.

[0018] Optionally, the liquid discharging flow path is connected to the lower end of the bent portion.

[0019] Optionally, the inner wall surface of the tank is provided with a fluororesin layer.

[0020] Optionally, a liquid storage portion for storing the liquid immersed in the gas flow path is provided in the bent portion.

[0021] Optionally, the liquid detection sensor is disposed in the gas flow path closer to the tank side than the bent portion.

[0022] Optionally, it further includes a cleaning mechanism for cleaning the gas flow path in which the liquid is immersed.

[0023] Optionally, the cleaning mechanism includes an introduction flow path that introduces a cleaning liquid into the portion of the gas flow path between the tank and the liquid detection sensor.

[0024] Optionally, the gas flow path includes a plurality of branch flow paths each having the open end, and a filter is respectively provided in each of the branch flow paths.

[0025] Optionally, it further includes an immersion suppression mechanism that suppresses the bubbly liquid generated on the liquid surface in the tank from immersing into the gas flow path.

[0026] Optionally, the liquid contains a surfactant.

[0027] Optionally, the tank is a dissolution tank for dissolving a solute in a solvent.

[0028] To achieve the above object, in a second aspect, the present application provides a method for manufacturing a chemical solution for semiconductor manufacturing, including a process of manufacturing using the above-mentioned manufacturing apparatus for a chemical solution for semiconductor manufacturing.

[0029] The manufacturing apparatus and method for chemical solutions used in semiconductor manufacturing provided by the present invention, compared with the prior art, have the beneficial effects that by providing a liquid detection sensor, the liquid immersed in the gas flow path can be detected in real time. When liquid is detected in the gas flow path, the mechanism can discharge the liquid in real time, interrupt the liquid injection into the tank, or block the gas flow path, thereby avoiding the blockage of the filter. In addition, a bending part is provided, which includes a descending section and an ascending section. The ascending section can partially inhibit the liquid flow towards the filter, further reducing the risk of filter blockage. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] The drawings forming a part of this application are used to provide a further understanding of this application, making other features, objects, and advantages of this application more apparent. The schematic embodiments and descriptions of the drawings of this application are used to explain this application and do not constitute an improper limitation of this application. In the drawings:

[0031] Figure 1 is a diagram showing the manufacturing apparatus.

[0032] Figure 2 is a diagram showing the detailed structure of the generating part.

[0033] Figure 3 is a diagram showing the gas-liquid exchange situation when injecting a surfactant and pure water into the dissolution tank.

[0034] Figure 4 is a diagram showing the gas-liquid exchange situation when discharging the first raw material from the dissolution tank.

[0035] Figure 5 is a diagram showing the situation where the bubble-like first raw material immerses in the gas flow path.

[0036] Figure 6 is a diagram showing the bending part.

[0037] Figure 7 is a diagram showing the operating state of the drain valve when the liquid detection sensor does not detect bubbles.

[0038] Figure 8 is a diagram showing the operating state of the drain valve when the liquid detection sensor detects bubbles.

[0039] Figure 9 is a flowchart showing the operation steps of the generating part.

[0040] Figure 10 is a diagram showing an example with a liquid storage part.

[0041] Figure 11 is a flowchart showing the operation steps of the generating part in the second embodiment.

[0042] Figure 12 It is a diagram showing the operating states of the pumps for supplying surfactant and pure water and the valves for surfactant and pure water when the liquid detection sensor detects bubbles.

[0043] Figure 13 It is a diagram showing the operating state of the valve of the branch flow path when the liquid detection sensor detects bubbles.

[0044] Figure 14 It is a diagram showing an example where a valve is provided between the liquid detection sensor and the bent portion.

[0045] Figure 15 It is a diagram showing an example where the drain valve is a three-way valve.

[0046] Figure 16 It is a diagram showing the operating state of the drain valve when the liquid detection sensor detects bubbles.

[0047] Figure 17 It is a diagram showing an example where a cleaning mechanism is provided.

[0048] Figure 18 It is a diagram showing an example where an antifoaming mechanism is provided.

[0049] Wherein: 2, manufacturing apparatus; 10, raw material supply section; 11, mixing tank; 12, purification section; 13, control section; 15, generation section; 16, 17, 50, 51, 111, storage tank; 18, 55, supply flow path; 19, 35, 56, 113, pump; 20, 40, 41, 57, 85, 95, valve; 21, 37, 86, filter; 25, 60, stirring blade; 29, circulation flow path; 30, output flow path; 31, return flow path; 32, filling flow path; 33, product container; 34, relay flow path; 36, 65, 114, switching valve; 38, branch flow path; 39, measurer; 52, dissolution tank; 52A, inner wall surface; 53, gas flow path; 61, fluororesin layer; 66, first drain flow path; 67, drain tank; 70, main flow path; 71, bent portion; 72, branch flow path; 73, liquid detection sensor; 75, open end; 78, descending section; 79, ascending section; 80, relay section; 82, second drain flow path; 83, 100, drain valve; 90, liquid storage section; 90A, inlet; 110, cleaning mechanism; 112, introduction flow path; 120, antifoaming mechanism; 121, mounting member; 122, suction port; 123, internal rotating body; 124, motor; 125, liquid outlet; 126, mounting hole; BRM1, first raw material in the form of bubbles (bubbles); CL, cleaning liquid; CS, chemical solution; PW, pure water; RM1, first raw material; RM2, second raw material; RM3, third raw material; SF, surfactant. Detailed Embodiments

[0050] Hereinafter, based on the preferred embodiments shown in the accompanying drawings, a measuring device for particles in a semiconductor manufacturing chemical solution, a filtering method for a chemical solution for semiconductor manufacturing, and a manufacturing method for a chemical solution for semiconductor manufacturing of the present invention will be described in detail.

[0051] In addition, hereinafter, a measuring device for particles in a semiconductor manufacturing chemical solution will be described with reference to the accompanying drawings. However, the structure of the measuring device for particles in a semiconductor manufacturing chemical solution shown below is simplified for the purpose of explaining the present invention, and the present invention is not limited to the structure of the accompanying drawings shown below.

[0052] In addition, hereinafter, "~" indicating a numerical range includes the numerical values described on both sides. For example, when ε is a numerical value εα to numerical value εβ, it means that the range of ε is a range including the numerical values εα and εβ. If expressed in mathematical symbols, it is εα ≤ ε ≤ εβ.

[0053] In addition, regarding specific angles, parallelism, orthogonality, etc., unless otherwise specified, they include the error ranges generally allowed in the corresponding technical field. Moreover, regarding length, temperature, pressure, etc., unless otherwise specified, they include the error ranges generally allowed in the corresponding technical field.

[0054] In addition, in this specification, each component can be used alone with a substance corresponding to each component, or two or more can be used in combination. Here, when two or more substances are used in combination for each component, unless otherwise specified, the content of the component refers to the total content of the substances used in combination.

[0055] Example 1:

[0056] As an example, as Figure 1 shown, a manufacturing apparatus 2 manufactures a chemical solution CS for semiconductor manufacturing. The chemical solution CS is, for example, a cleaning solution for removing residues remaining on the surface of a semiconductor wafer after CMP in a semiconductor manufacturing process. The manufacturing apparatus 2 includes a raw material supply unit 10, a mixing tank 11, a purification unit 12, and a control unit 13 (refer to Figure 2 ). The manufacturing apparatus 2 is an example of the "manufacturing apparatus for a chemical solution for semiconductor manufacturing" according to the present invention. In addition, the manufacturing apparatus 2 implements the "manufacturing method for a chemical solution for semiconductor manufacturing" according to the present invention.

[0057] The raw material supply unit 10 has a first raw material RM1 (refer to Figure 2A generation unit 15 for the first raw material RM1, a storage tank 16 for the second raw material RM2, and a storage tank 17 for the third raw material RM3. The generation unit 15 generates the first raw material RM1 under the control of the control unit 13. In addition, the control unit 13 is composed of a processor such as a CPU (Central Processing Unit), a memory, a storage device, and a bus connecting these processor, memory, and storage device.

[0058] The first raw material RM1 is a liquid, for example, an aqueous surfactant solution in which a surfactant SF is dissolved in pure water PW (both are referred to Figure 2 ). The second raw material RM2 is also a liquid, for example, an aqueous organic acid solution in which an organic acid such as a carboxylic acid is dissolved in pure water. In addition, the third raw material RM3 is also a liquid, for example, an aqueous organic acid solution in which an organic acid such as phosphonic acid is dissolved in pure water.

[0059] One end of a supply flow path 18 is respectively connected to the generation unit 15, the storage tanks 16 and 17. The other end of the supply flow path 18 is connected to the upper part of the mixing tank 11. The first raw material RM1 to the third raw material RM3 are supplied to the mixing tank 11 through the supply flow path 18. In addition, the supply flow path 18 also includes flow paths such as a gas flow path 53 described later and is composed of pipes.

[0060] On the supply flow path 18, a pump 19, a valve 20, and a filter 21 are provided in sequence from the upstream side. The pump 19 is driven under the control of the control unit 13. The pump 19 sends out the first raw material RM1 to the third raw material RM3 into the mixing tank 11 at a set speed respectively. The set speed is the flow rate per unit time. The valve 20 is opened and closed under the control of the control unit 13. The valve 20 adjusts the flow rate of the first raw material RM1 to the third raw material RM3 passing through the supply flow path 18 by changing its opening degree. The filter 21 removes impurity particles in the first raw material RM1 to the third raw material RM3 passing through the supply flow path 18.

[0061] Stirring blades 25 are provided in the mixing tank 11. The stirring blades 25 rotate at a set rotational speed under the control of the control unit 13. Thereby, the first raw material RM1 to the third raw material RM3 are mixed in the mixing tank 11 to produce a liquid medicine CS.

[0062] The purification unit 12 performs a process of removing impurity particles contained in the liquid medicine CS as a purification process for the liquid medicine CS manufactured in the mixing tank 11. The purification unit 12 is provided with a circulation flow path 29, and the circulation flow path 29 circulates the liquid medicine CS between the mixing tank 11 and the purification unit 12 by temporarily discharging the liquid medicine CS from the mixing tank 11 and then returning it to the mixing tank 11 again. The circulation flow path 29 is constituted by, for example, an output flow path 30 and a return flow path 31. One end of the output flow path 30 is connected to the lower part of the mixing tank 11. One end of the return flow path 31 is connected to the upper part of the mixing tank 11. Moreover, the other ends of the output flow path 30 and the return flow path 31 are connected to each other, thereby forming the circulation flow path 29.

[0063] One end of the filling flow path 32 is connected to the circulation flow path 29, for example, near the connection point of the output flow path 30 and the return flow path 31. A product container 33 is connected to the other end of the filling flow path 32. The liquid medicine CS passing through the output flow path 30 and the filling flow path 32 is filled in the product container 33. This product container 33 is shipped out as a product to a factory that manufactures semiconductors using the liquid medicine CS.

[0064] On the output flow path 30, a pump 35, a switching valve 36, and a filter 37 are provided in sequence from the upstream side. The pump 35 is driven under the control of the control unit 13. The pump 35 sucks the liquid medicine CS from the mixing tank 11, circulates the sucked liquid medicine CS in the circulation flow path 29, or sends it from the output flow path 30 to the filling flow path 32. One end of a relay flow path 34 is connected to the switching valve 36. The other end of the relay flow path 34 is connected to the return flow path 31. The switching valve 36 is opened and closed under the control of the control unit 13. The switching valve 36 switches the flow path through which the liquid medicine CS passes to either the output flow path 30 or the relay flow path 34. The filter 37 removes impurity particles in the liquid medicine CS passing through the output flow path 30.

[0065] A branch flow path 38 is provided on the downstream side of the filter 37 in the output flow path 30. A measurer 39 is arranged in the branch flow path 38. The measurer 39 measures the amount of impurity particles in the liquid medicine CS passing through the branch flow path 38 during a unit period (for example, 1 second). More specifically, the measurer 39 is a so-called particle counter that counts the number of impurity particles as the amount of impurity particles. The measurer 39 is, for example, a light scattering type particle counter that counts the number of impurity particles based on the number of times of receiving scattered light generated by irradiating the impurity particles with measurement light. Alternatively, the measurer 39 may also be a light blocking type particle counter that counts the number of impurity particles based on the number of times the measurement light is blocked by the impurity particles. The measurer 39 outputs the counting result of the number of impurity particles to the control unit 13.

[0066] Near the connection points of the circulation flow path 29, the output flow path 30, and the filling flow path 32, a valve 40 is provided on the circulation flow path 29 side, and a valve 41 is provided on the filling flow path 32 side. These valves 40 and 41 are opened and closed under the control of the control unit 13.

[0067] The control unit 13 selects any one of the following three paths as the path through which the liquid medicine CS flows in the purification unit 12 by controlling the opening and closing states of the switching valve 36, the valve 40, and the valve 41. First, the first path is the circulation flow path 29. When the output flow path 30 side of the switching valve 36 is opened, the relay flow path 34 side is closed, the valve 40 is opened, and the valve 41 is closed, the circulation flow path 29 selected as the first path. At this time, the liquid medicine CS flowing out of the mixing tank 11 returns from the output flow path 30 to the mixing tank 11 via the return flow path 31. At this time, the liquid medicine CS does not pass through the relay flow path 34. In addition, at this time, the liquid medicine CS passes through the filter 37. Therefore, the impurity particles in the liquid medicine CS are removed by the filter 37. Therefore, by repeatedly circulating the liquid medicine CS based on this circulation flow path 29, the removal of the impurity particles in the liquid medicine CS can be promoted, and the purity of the liquid medicine CS can be improved. When the counting result of the number of impurity particles of the measurer 39 does not satisfy the preset quality condition, the control unit 13 selects the circulation flow path 29 through the switching valve 36. Specifically, the quality condition is the upper limit value of the number of impurity particles required for the liquid medicine CS. When the counting result of the number of impurity particles does not satisfy the quality condition, it means that the counting result of the number of impurity particles is equal to or greater than the upper limit value.

[0068] The second path is the flow path from the output flow path 30 toward the filling flow path 32. When the output flow path 30 side of the switching valve 36 is opened, the relay flow path 34 side is closed, the valve 40 is closed, and the valve 41 is opened, the second path is selected. At this time, the liquid medicine CS flowing out of the mixing tank 11 is filled into the product container 33 from the output flow path 30 via the filling flow path 32. When the counting result of the number of impurity particles of the measurer 39 satisfies the quality condition, the control unit 13 selects this second path. When the counting result of the number of impurity particles satisfies the quality condition, it means that the counting result of the number of impurity particles is less than the upper limit value. Therefore, only the liquid medicine CS that satisfies the quality condition is filled into the product container 33, and the liquid medicine CS that does not satisfy the quality condition is not filled.

[0069] The third path is the path from the output flow path 30 via the relay flow path 34 towards the return flow path 31. The third path is selected when the output flow path 30 side of the switching valve 36 is closed, the relay flow path 34 side is open, and both the valve 40 and the valve 41 are closed. At this time, the liquid medicine flowing out from the mixing tank 11 returns to the mixing tank 11 from the output flow path 30 via the relay flow path 34 and the return flow path 31. That is, although different from the circulation flow path 29, the third path from the output flow path 30 via the relay flow path 34 towards the return flow path 31 also forms a circulation flow path of the liquid medicine CS. However, in the third path, since the liquid medicine CS does not pass through the filter 37, the impurity particles in the liquid medicine CS are not removed by the filter 37. When performing maintenance on the filter 37 and / or the measurer 39, etc., the control unit 13 selects the third path formed by the output flow path 30, the return flow path 31, and the relay flow path 34.

[0070] As an example, as Figure 2 shown, the generating unit 15 includes a storage tank 50 for the surfactant SF, a storage tank 51 for pure water PW, a dissolution tank 52, and a gas flow path 53. The surfactant SF and the pure water PW are examples of the "liquid" involved in the present invention. The dissolution tank 52 is an example of the "tank" involved in the present invention.

[0071] One end of a supply flow path 55 is connected to the lower parts of the storage tanks 50 and 51. The other end of the supply flow path 55 is connected to the upper part of the dissolution tank 52. The surfactant SF and the pure water PW are supplied to the dissolution tank 52 through the supply flow path 55. That is, the surfactant SF and the pure water PW are injected into the dissolution tank 52.

[0072] On the supply flow path 55, a pump 56 and a valve 57 are provided in sequence from the upstream side. The pump 56 is driven under the control of the control unit 13. The pump 56 sends out the surfactant SF and the pure water PW into the dissolution tank 52 at a set speed respectively. The valve 57 opens and closes under the control of the control unit 13. The valve 57 adjusts the flow rates of the surfactant SF and the pure water PW passing through the supply flow path 55 by changing its opening degree. In addition, a filter can be provided on the downstream side of the valve 57.

[0073] The inside of the dissolution tank 52 is a closed space, having airtightness and liquid tightness. In addition, the dissolution tank 52 is made of a metal such as stainless steel, aluminum, or copper. However, the inner wall surface 52A of the dissolution tank 52 in contact with the first raw material RM1 is covered with a fluororesin layer 61 so that the metal components do not dissolve into the first raw material RM1. Specifically, the fluororesin layer 61 is polytetrafluoroethylene (PTFE: polytetrafluoroethylene) or perfluoroalkoxyalkane (PFA: perfluoro alkoxy alkane), etc.

[0074] A stirring blade 60 is provided inside the dissolution tank 52. The stirring blade 60 rotates at a set rotational speed under the control of the control unit 13. Thereby, the surfactant SF is dissolved in the pure water PW inside the dissolution tank 52 (the surfactant SF and the pure water PW are mixed) to generate the first raw material RM1.

[0075] The other end of the supply flow path 18 is connected to the lower part of the dissolution tank 52. A switching valve 65 is provided on the supply flow path 18. One end of a first drain flow path 66 is connected to the switching valve 65. The other end of the first drain flow path 66 is connected to the drain tank 67. The switching valve 65 opens and closes under the control of the control unit 13. The switching valve 65 switches the flow path through which the first raw material RM1 passes to either the supply flow path 18 or the first drain flow path 66. That is, the first raw material RM1 is discharged from the dissolution tank 52 through the supply flow path 18 or the first drain flow path 66.

[0076] The gas flow path 53 is a gas-liquid exchange flow path. Specifically, as Figure 3 shown, when injecting the surfactant SF and the pure water PW into the dissolution tank 52, the gas flow path 53 discharges the gas inside the dissolution tank 52 to the outside through the open end 75. In addition, as Figure 4 shown, when discharging the first raw material RM1 from the dissolution tank 52, the gas flow path 53 introduces the gas from the outside into the dissolution tank 52 through the open end 75. Furthermore, in Figure 3 and Figure 4 , the pump 56, the valve 57, and the bending portion 71 described later are omitted.

[0077] As an example, as Figure 5 shown, the first raw material RM1 often generates a foamy first raw material (hereinafter simply referred to as foam) BRM1 on the liquid surface due to stirring. In particular, since the first raw material RM1 contains the surfactant SF, it is easy to generate the foam BRM1. And sometimes this foam BRM1 immerses into the gas flow path 53 together with the gas discharged when injecting the surfactant SF and the pure water PW into the dissolution tank 52 as shown in Figure 3 . The present invention suppresses the clogging of the mesh of the filter 86 (refer to Figure 2 ) caused by the foam BRM1 immersed in the gas flow path 53.

[0078] Returning to Figure 2 , the gas flow path 53 has a main flow path 70, a bending portion 71, and three branch flow paths 72. The main flow path 70, the bending portion 71, and the branch flow paths 72 are provided in sequence from the dissolution tank 52 side.

[0079] One end of the main flow path 70 is connected to the dissolution tank 52. More specifically, one end of the main flow path 70 is connected to the space above the liquid level of the first raw material RM1 in the dissolution tank 52. In addition, a liquid detection sensor 73 is provided in the main flow path 70. Since the main flow path 70 is located closer to the dissolution tank 52 than the bending portion 71, the liquid detection sensor 73 is provided closer to the dissolution tank 52 than the bending portion 71. Further, the liquid detection sensor 73 is provided closer to the dissolution tank 52 than the rising section 79 (refer to Figure 6 ) of the bending portion 71. The liquid detection sensor 73 detects the bubbles BRM1 that enter the gas flow path 53 from the dissolution tank 52. When the liquid detection sensor 73 detects the bubbles BRM1, it outputs a detection signal indicating the detection of the bubbles BRM1 to the control unit 13.

[0080] The other end of the main flow path 70 and one end of the branch flow path 72 are respectively connected to the bending portion 71. As an example, as Figure 6 shown in the enlarged view, the bending portion 71 includes a descending section 78, a rising section 79, and a relay section 80. The descending section 78 is a section that descends as it approaches the branch flow path 72. The rising section 79 is a section that rises as it approaches the branch flow path 72 after the descending section 78. The relay section 80 is a section that connects the descending section 78 and the rising section 79. As an example, the descending section 78, the rising section 79, and the relay section 80 are all formed by straight pipes. Therefore, the bending portion 71 is U-shaped. The descending section 78 and the rising section 79 are, as the name implies, the sections where the pipes forming the gas flow path 53 descend and rise. Descending means that the pipe is inclined downward from the horizontal direction at a set angle. In addition, rising means that the pipe is inclined upward from the horizontal direction at a set angle. The set angle is, for example, 90°. The pipe forming the relay section 80 is, for example, parallel to the horizontal direction.

[0081] In Figure 2 , one end of the second drain flow path 82 is connected to the lower end of the descending section 78. That is, the second drain flow path 82 is connected to the gas flow path 53 between the liquid detection sensor 73 and the branch flow path 72. Further, the second drain flow path 82 is connected to the bending portion 71, and further to the lower end of the bending portion 71. The other end of the second drain flow path 82 is connected to the drain tank 67.

[0082] A drain valve 83 is provided in the second drain flow path 82. The drain valve 83 opens and closes under the control of the control unit 13. The control unit 13, the second drain flow path 82, and the drain valve 83 are an example of the "mechanism for discharging the liquid immersed in the gas flow path" according to the present invention. In addition, the second drain flow path 82 is an example of the "drain flow path" according to the present invention.

[0083] The other ends of the three branch flow paths 72 are all open ends 75 that are open to the outside as described above. A valve 85 and a filter 86 are provided on the branch flow path 72. The valve 85 and the filter 86 are arranged in sequence starting from the dissolution tank 52 side. The valve 85 opens and closes under the control of the control unit 13. The valve 85 closes when replacing the filter 86 or the like. The filter 86 filters the gas discharged from the dissolution tank 52 and the gas introduced from the open end 75.

[0084] As an example, as Figure 7 shown, when the bubble BRM1 is not immersed in the gas flow path 53 and no detection signal is output from the liquid detection sensor 73, the control unit 13 closes the drain valve 83. That is, when no detection signal is output from the liquid detection sensor 73, the control unit 13 seals the second drain flow path 82.

[0085] On the other hand, as an example, as Figure 8 shown, when the bubble BRM1 is immersed in the gas flow path 53, the liquid detection sensor 73 detects the immersed bubble BRM1 and outputs a detection signal from the liquid detection sensor 73, the control unit 13 opens the drain valve 83. That is, when a detection signal is output from the liquid detection sensor 73, the control unit 13 opens the second drain flow path 82. In this way, by opening the second drain flow path 82, the bubble BRM1 immersed in the gas flow path 53 is discharged into the drain tank 67 through the second drain flow path 82.

[0086] Next, as an example, with reference to Figure 9 the flowchart shown, the effects brought by the above structure will be described. In the generation unit 15, the generation of the first raw material RM1 starts (step ST100). Specifically, the valve 57 is opened under the control of the control unit 13, and the pump 56 is further driven. As a result, the surfactant SF and the pure water PW stored in the storage tanks 50 and 51 are injected into the dissolution tank 52 through the supply flow path 55. The gas in the dissolution tank 52 is discharged to the outside through the gas flow path 53. Therefore, it is possible to prevent the positive pressure in the dissolution tank 52 from becoming too high and suppress the poor injection of the surfactant SF and the pure water PW into the dissolution tank 52.

[0087] In the dissolution tank 52, the stirring blade 60 rotates at a set rotation speed under the control of the control unit 13. As a result, the surfactant SF dissolves in the pure water PW to generate the first raw material RM1.

[0088] The supply flow path 18 side of the switching valve 65 is opened under the control of the control unit 13, and the first raw material RM1 is supplied to the mixing tank 11 through the supply flow path 18. The gas is introduced into the dissolution tank 52 through the gas flow path 53. Therefore, it is possible to prevent the inside of the dissolution tank 52 from becoming negative pressure and suppress the poor discharge of the first raw material RM1 from the dissolution tank 52.

[0089] In the mixing tank 11, in addition to supplying the first raw material RM1, the second raw material RM2 and the third raw material RM3 are also supplied. The first raw material RM1 to the third raw material RM3 are mixed in the mixing tank 11 to form a liquid medicine CS. The liquid medicine CS is purified in the purification unit 12 and then filled into the product container 33.

[0090] When the generation of the first raw material RM1 starts, as Figure 7 shown, the drain valve 83 is closed. In the gas flow path 53, whether the bubble BRM1 is immersed is monitored by the liquid detection sensor 73 (step ST110). When the bubble BRM1 is not immersed in the gas flow path 53 and no detection signal is output from the liquid detection sensor 73 (No in step ST110), the drain valve 83 remains closed. On the other hand, when the bubble BRM1 is immersed in the gas flow path 53, the immersed bubble BRM1 is detected by the liquid detection sensor 73 and a detection signal is output from the liquid detection sensor 73 to the control unit 13 (Yes in step ST110), as Figure 8 shown, the drain valve 83 is opened under the control of the control unit 13. Thereby, the second drain flow path 82 is opened (step ST120). The bubble BRM1 immersed in the gas flow path 53 is discharged into the drain tank 67 through the second drain flow path 82 (step ST130).

[0091] When the bubble BRM1 continues to be immersed in the gas flow path 53, the immersed bubble BRM1 is detected by the liquid detection sensor 73 and a detection signal is output from the liquid detection sensor 73 to the control unit 13 (Yes in step ST140), the open state of the drain valve 83 is maintained, and the bubble BRM1 immersed in the gas flow path 53 is put into the drain tank 67 (step ST130). On the other hand, when the bubble BRM1 is no longer immersed in the gas flow path 53 and no detection signal is output from the liquid detection sensor 73 (No in step ST140), the drain valve 83 is closed under the control of the control unit 13. Thereby, the second drain flow path 82 is closed (step ST150). When the manufacturing of the liquid medicine CS is not finished (No in step ST160), the processing of these steps ST110 to step ST150 is continued to be repeated.

[0092] As described above, the generation unit 15 of the manufacturing device 2 includes a dissolution tank 52, a gas flow path 53, a filter 86, a bending portion 71, and a liquid detection sensor 73. The dissolution tank 52 accommodates the first raw material RM1 (surfactant SF and pure water PW) of the liquid medicine CS, and can inject the surfactant SF and pure water PW and discharge the first raw material RM1. One end of the gas flow path 53 is connected to the dissolution tank 52, and the other end is an open end 75 open to the outside. As Figure 3 and Figure 4As shown, the gas flow path 53 is a gas-liquid exchange flow path for introducing and discharging gas to and from the dissolution tank 52 when the surfactant SF and pure water PW are injected and the first raw material RM1 is discharged. A filter 86 is provided in the gas flow path 53 to filter the gas sucked from the open end 75.

[0093] The bent portion 71 forms a part of the gas flow path 53. As Figure 6 shown, the bent portion 71 includes a descending section 78 that descends as it approaches the filter 86 in the direction from the dissolution tank 52 to the filter 86, and an ascending section 79 that ascends as it approaches the filter 86 after the descending section 78. By having the bent portion 71, the distance from the dissolution tank 52 to the filter 86 can be made longer compared to the case without the bent portion 71. Therefore, the bubbles BRM1 immersed in the gas flow path 53 are less likely to reach the filter 86. In particular, by having the ascending section 79, the bubbles BRM1 immersed in the gas flow path 53 are even less likely to reach the filter 86 under the action of gravity. Therefore, compared with the prior art, the filter 86 is less likely to become clogged.

[0094] The liquid detection sensor 73 is provided in the gas flow path 53 on the side closer to the dissolution tank 52 than the ascending section 79. The liquid detection sensor 73 detects the bubbles BRM1 immersed in the gas flow path 53. As Figure 8 shown, when the liquid detection sensor 73 detects the bubbles BRM1, the drain valve 83 is opened under the control of the control unit 13, and the second drain flow path 82 is opened. The bubbles BRM1 are discharged into the drain tank 67 through the second drain flow path 82. Since the bubbles BRM1 are discharged, it is even less likely for the bubbles BRM1 to reach the filter 86. Therefore, compared with the prior art, the filter 86 is less likely to become clogged. As a result, it is possible to suppress the occurrence of injection failures of the surfactant SF and pure water PW into the dissolution tank 52 and discharge failures of the first raw material RM1 from the dissolution tank 52 due to clogging of the filter 86.

[0095] According to the mechanism for discharging the bubbles BRM1 constituted by the control unit 13, the second drain flow path 82, and the drain valve 83, the bubbles BRM1, which are the root cause of the clogging of the filter 86, are discharged from the gas flow path 53. Therefore, the probability of the filter 86 becoming clogged due to the bubbles BRM1 can be made close to zero.

[0096] In addition, according to the mechanism for discharging the bubbles BRM1 constituted by the control unit 13, the second drain flow path 82, and the drain valve 83, the bubbles BRM1 can be discharged without closing the gas flow path 53. Therefore, during the discharge of the bubbles BRM1, the gas-liquid exchange based on the gas flow path 53 is also carried out smoothly. Therefore, it is possible to make it less likely for the filter 86 to become clogged without interrupting the generation of the first raw material RM1.

[0097] The second liquid discharge flow path 82 is connected to the gas flow path 53 between the liquid detection sensor 73 and the filter 86. Therefore, the bubble BRM1 that has passed through the liquid detection sensor 73 can be discharged before reaching the filter 86, and the probability of clogging the mesh of the filter 86 can be made close to zero.

[0098] The second liquid discharge flow path 82 is connected to the bent portion 71. Therefore, the bubble BRM1 can be discharged before reaching the filter 86, and the probability of clogging the mesh of the filter 86 can be made infinitely close to zero.

[0099] The second liquid discharge flow path 82 is connected to the lower end of the bent portion 71 (the lower end of the descending section 78). Therefore, the bubble BRM1 can be smoothly discharged under the action of gravity.

[0100] A fluororesin layer 61 is provided on the inner wall surface 52A of the dissolution tank 52. In the event that the mesh of the filter 86 becomes clogged, resulting in poor discharge of the first raw material RM1 from the dissolution tank 52 and causing a negative pressure inside the dissolution tank 52, there is a possibility that the fluororesin layer 61 will peel off. However, according to the present invention that exhibits the effect of making it difficult for the filter 86 to become clogged, the possibility of the fluororesin layer 61 peeling off can be reduced.

[0101] The liquid detection sensor 73 is provided in the gas flow path 53 closer to the dissolution tank 52 side than the bent portion 71. Therefore, the bubble BRM1 that has entered the gas flow path 53 can be detected quickly. Therefore, countermeasures such as discharging the bubble BRM1 can be taken immediately to prevent the bubble BRM1 from reaching the filter 86.

[0102] The gas flow path 53 branches into three branch flow paths 72 each having an open end 75, and filters 86 are provided in the three branch flow paths 72 respectively. Therefore, even if one of the filters 86 becomes clogged, as long as the other filters 86 do not become clogged, the production of the liquid medicine CS can continue. Moreover, the other filters 86 that have not become clogged can be made to continue operating and the clogged filter 86 can be replaced.

[0103] The first raw material RM1 contains a surfactant SF. The surfactant SF is prone to foaming, so the bubble BRM1 is more likely to enter the gas flow path 53. Therefore, in the manufacturing apparatus 2 that processes a liquid such as the first raw material RM1 containing the easily foaming surfactant SF, the present invention having the effect of suppressing the clogging of the mesh of the filter 86 caused by the bubble BRM1 is particularly effective.

[0104] The dissolution tank 52 is a tank for dissolving the surfactant SF in pure water PW. When the surfactant SF and pure water PW are stirred using the stirring blade 60 in order to dissolve the surfactant SF in pure water PW, foaming easily occurs, and thus the bubbles BRM1 are more likely to enter the gas flow path 53. Therefore, in the manufacturing apparatus 2 that processes a liquid such as the first raw material RM1 containing the surfactant SF that easily foams, the present invention having an effect of suppressing clogging of the mesh of the filter 86 caused by the bubbles BRM1 is particularly effective.

[0105] Modification Example 1

[0106] As long as the valve 85 is not closed, the gas flow path 53 is in an open state. Therefore, although it is highly unlikely that the bubbles BRM1 that have entered the gas flow path 53 reach the filter 86, it cannot be asserted that there is absolutely no possibility. Therefore, as an example, as Figure 10 shown, a liquid storage portion 90 for storing the bubbles BRM1 that have entered the gas flow path 53 can be provided at the bent portion 71. The liquid storage portion 90 is provided between the descending section 78 and the ascending section 79, that is, in the relay section 80. In other words, the liquid storage portion 90 is provided closer to the filter 86 side than the drain valve 83 disposed in the second drain flow path 82 as Figure 2 shown. In order to suppress the possibility of the bubbles BRM1 passing through to the downstream side, the inlet 90A of the liquid storage portion 90 provided in the relay section 80 is formed to have a width that can reliably introduce the bubbles BRM1 into the liquid storage portion 90. By having this liquid storage portion 90, the bubbles BRM1 can be recovered even when the bubbles BRM1 do not flow into the drain flow path 82 and enter the relay section 80. In addition to the bent portion 71 and the mechanism for discharging the bubbles BRM1, double or triple preventive measures such as this liquid storage portion 90 are taken, so that the following effects can be ensured: compared with the prior art, the filter 86 is less likely to become clogged, and it is possible to suppress the occurrence of defects caused by clogging of the mesh of the filter 86. Further, it can be configured such that the liquid storage portion 90 is connected to the drain tank 67 and the bubbles BRM1 stored in the liquid storage portion 90 are discharged to the drain tank 67.

[0107] Example 2:

[0108] The above-described first embodiment shows an example in which, when the bubbles BRM1 enter the gas flow path 53, preventive measures are taken to prevent the bubbles BRM1 from reaching the filter 86 without interrupting the generation of the first raw material RM1. In contrast, the second embodiment is an example in which preventive measures are taken to prevent the bubbles BRM1 from reaching the filter 86 by interrupting the generation of the first raw material RM1.

[0109] As an example, as Figure 11As shown in the flowchart, in the second embodiment, when the bubble BRM1 is immersed in the gas flow path 53, the immersed bubble BRM1 is detected by the liquid detection sensor 73 and the detection signal is output from the liquid detection sensor 73 to the control unit 13 ("Yes" in step ST110), the generation of the first raw material RM1 is interrupted under the control of the control unit 13, and a defensive measure is taken to prevent the bubble BRM1 from reaching the filter 86 (step ST200).

[0110] When the bubble BRM1 continues to penetrate into the gas flow path 53, the penetrated bubble BRM1 is detected by the liquid detection sensor 73, and the detection signal is output from the liquid detection sensor 73 to the control unit 13 ("Yes" in step ST140), the defensive countermeasure is continued (step ST200). On the other hand, when the bubble BRM1 no longer penetrates into the gas flow path 53 and the detection signal is no longer output from the liquid detection sensor 73 ("No" in step ST140), the defensive countermeasure is released, and after the set time has passed, the production of the first raw material RM1 is restarted (step ST210). The set time is, for example, a time set based on the average time required for the bubble BRM1 immersed in the gas flow path 53 to disappear naturally. When the production of the chemical solution CS is not completed ("No" in step ST160), the processing of these steps ST110, ST200, ST140 and ST210 is continued to be repeated.

[0111] There are two types of defense measures. One type of defense measure is: as an example, Figure 12 As shown, the injection of the surfactant SF and the pure water PW into the dissolving tank 52 is interrupted. More specifically, when the bubble BRM1 penetrates into the gas flow path 53, the liquid detection sensor 73 detects the penetrated bubble BRM1 and a detection signal is output from the liquid detection sensor 73, the control unit 13 causes the pump (at Figure 12 "Pump for supplying surfactant and pure water") 56 (refer to Figure 2 ) is stopped and the valve is closed (at Figure 12 "Valves for surfactants and pure water") 57 (ref. Figure 2 ). The control unit 13, the pump 56, and the valve 57 are an example of the "mechanism for interrupting the injection of the liquid into the tank" according to the present invention.

[0112] Thus, by interrupting the injection of surfactant SF and pure water PW into the dissolution tank 52, the pressure applied to the gas flow path 53, i.e., the positive pressure in the direction from the dissolution tank 52 toward the filter 86, decreases. Therefore, the bubbles BRM1 immersed in the gas flow path 53 are less likely to reach the filter 86. In addition, the situation where the bubbles BRM1 further immerse into the gas flow path 53 does not occur. Thus, according to such a structure, the following effect can also be achieved: compared with the prior art, the filter 86 is less likely to be clogged with mesh, and the occurrence of defects caused by the clogging of the mesh of the filter 86 can be suppressed.

[0113] Another defensive measure is, as an example, as Figure 13 shown, to close (block) the gas flow path 53. More specifically, when the bubble BRM1 immerses into the gas flow path 53 and the liquid detection sensor 73 detects the immersed bubble BRM1 and outputs a detection signal from the liquid detection sensor 73, the control unit 13 closes the valve (denoted as "the valve of the branch flow path" in Figure 13 ) 85 (refer to Figure 2 ) and closes the gas flow path 53. Thus, when the gas flow path 53 is closed, since gas-liquid exchange cannot be performed, it is also necessary to interrupt the injection of surfactant SF and pure water PW into the dissolution tank 52 at this time. Incidentally, it is also necessary to interrupt the discharge of the first raw material RM1 from the dissolution tank 52. The control unit 13 and the valve 85 are an example of the "mechanism for closing the gas flow path" according to the present invention.

[0114] Thus, by closing the gas flow path 53, the bubbles BRM1 immersed in the gas flow path 53 are less likely to reach the filter 86. Therefore, according to such a structure, the following effect can also be achieved: compared with the prior art, the filter 86 is less likely to be clogged with mesh, and the occurrence of defects caused by the clogging of the mesh of the filter 86 can be suppressed.

[0115] Modification 2

[0116] As an example, as Figure 14 shown, a valve 95 can also be provided between the liquid detection sensor 73 and the bent portion 71 in the main flow path 70, and the gas flow path 53 can be closed by closing the valve 95 instead of the valve 85.

[0117] Modification 3

[0118] In addition, as an example, as Figure 15 shown, the gas flow path 53 can also be closed by the drain valve 100 which is a three-way valve. The lower end of the descending section 78, one end of the relay section 80, and one end of the drain flow path 82 are connected to the drain valve 100.

[0119] When the bubble BRM1 is not immersed in the gas flow path 53 and no detection signal is output from the liquid detection sensor 73, the control unit 13 opens the gas flow path 53 side of the drain valve 100 and closes the second drain flow path 82 side. That is, when no detection signal is output from the liquid detection sensor 73, the control unit 13 opens the gas flow path 53 and closes the second drain flow path 82.

[0120] On the other hand, as an example, as Figure 16 shown, when the bubble BRM1 is immersed in the gas flow path 53, the liquid detection sensor 73 detects the immersed bubble BRM1 and outputs a detection signal from the liquid detection sensor 73, the control unit 13 closes the gas flow path 53 side of the drain valve 100 and opens the second drain flow path 82 side. That is, when a detection signal is output from the liquid detection sensor 73, the control unit 13 closes the gas flow path 53 and opens the second drain flow path 82. In this way, by closing the gas flow path 53, it is difficult for the bubble BRM1 immersed in the gas flow path 53 to reach the filter 86. In addition, by opening the second drain flow path 82, the bubble BRM1 immersed in the gas flow path 53 is discharged into the drain tank 67 through the second drain flow path 82.

[0121] Figure 15 and Figure 16 The example shown in is an example in which both the discharge of the bubble BRM1 and the closing of the gas flow path 53 are carried out when the liquid detection sensor 73 detects the bubble BRM1. In this way, the above-described first embodiment and the above-described second embodiment can also be implemented in combination. When the liquid detection sensor 73 detects the bubble BRM1, all operations of discharging the bubble BRM1, interrupting the injection of the surfactant SF and the pure water PW into the dissolution tank 52, and closing the gas flow path 53 can be carried out.

[0122] Here, closing the gas flow path 53 means closing any part of the gas flow path 53 from the dissolution tank 52 to the filter 86 in order to prevent the bubble BRM1 from reaching the filter 86. In the third modification, when a detection signal is output from the liquid detection sensor 73, the gas flow path 53 is connected to the second drain flow path 82 through the drain valve 100. Therefore, the gas flow path 53 is opened through the second drain flow path 82. However, the gas flow path 53 from the dissolution tank 52 to the filter 86 is closed by the drain valve 100. Therefore, it can also be said that the gas flow path 53 is closed in the third modification.

[0123] Modification 4

[0124] As an example, as Figure 17As shown, a cleaning mechanism 110 capable of cleaning the gas flow path 53 into which the bubble BRM1 is immersed can be provided. The cleaning mechanism 110 has a storage tank 111, an introduction flow path 112, a pump 113, and a switching valve 114. The storage tank 111 stores the cleaning liquid CL. The cleaning liquid CL is, for example, pure water PW. Therefore, the storage tank 51 can also serve as the storage tank 111. One end of the introduction flow path 112 is connected to the lower part of the storage tank 111. The other end of the introduction flow path 112 is connected to the switching valve 114. The switching valve 114 is provided between the dissolution tank 52 and the liquid detection sensor 73 in the main flow path 70. Therefore, the cleaning liquid CL is introduced into the part between the dissolution tank 52 and the liquid detection sensor 73 in the main flow path 70.

[0125] The pump 113 is provided in the introduction flow path 112. The pump 113 is driven under the control of the control unit 13. The pump 113 sends out the cleaning liquid CL to the switching valve 114 at a set speed. The switching valve 114 opens and closes under the control of the control unit 13.

[0126] When the bubble BRM1 is immersed in the gas flow path 53, the liquid detection sensor 73 detects the immersed bubble BRM1 and outputs a detection signal from the liquid detection sensor 73, the control unit 13 opens the drain valve 83 and opens the second drain flow path 82. In addition, the control unit 13 drives the pump 113, opens the introduction flow path 112 side of the switching valve 114, and connects the main flow path 70 and the introduction flow path 112. In this way, by connecting the main flow path 70 and the introduction flow path 112, the cleaning liquid CL is introduced from the introduction flow path 112 to the main flow path 70 via the switching valve 114. Then, the gas flow path 53 is cleaned with the introduced cleaning liquid CL.

[0127] The cleaning liquid CL flowing from the switching valve 114 to the dissolution tank 52 side is recovered into the dissolution tank 52 through the main flow path 70 on the dissolution tank 52 side. In contrast, the cleaning liquid CL flowing from the switching valve 114 to the liquid detection sensor 73 side is recovered into the drain tank 67 through the main flow path 70 on the liquid detection sensor 73 side, the descending section 78 of the bending section 71, and the second drain flow path 82.

[0128] According to the cleaning mechanism 110, the gas flow path 53 contaminated by the immersed bubble BRM1 can be cleaned, and the cleanliness of the gas flow path 53 can be maintained. In addition, the cleaning mechanism 110 has an introduction flow path 112 for introducing the cleaning liquid CL into the part between the dissolution tank 52 and the liquid detection sensor 73 in the gas flow path 53. Therefore, the part between the dissolution tank 52 and the liquid detection sensor 73 in the gas flow path 53 can be cleaned, and the cleanliness of this part can be maintained.

[0129] Sometimes, the pure water PW, which is a solvent component of the bubble BRM1 immersed in the gas flow path 53, volatilizes, and the surfactant SF, which is a solid component, precipitates. In this case, contaminants in the gas flow path 53 may be carried into the dissolution tank 52 together with the precipitated surfactant SF by the gas introduced from the gas flow path 53. Therefore, it is crucial to maintain the cleanliness of the gas flow path 53.

[0130] When the surfactant SF precipitates on the detection part of the liquid detection sensor 73, it may not be possible to accurately detect the immersed bubble BRM1. Therefore, it is crucial to maintain the cleanliness of the part between the dissolution tank 52 and the liquid detection sensor 73 in the gas flow path 53, particularly the liquid detection sensor 73.

[0131] In addition, although an example in which the cleaning liquid CL flows to both the dissolution tank 52 side and the liquid detection sensor 73 side has been described, the present invention is not limited thereto. A structure in which the cleaning liquid CL flows only to either the dissolution tank 52 side or the liquid detection sensor 73 side may also be adopted. Further, although an example in which the cleaning liquid CL flowing to the dissolution tank 52 side is recovered into the dissolution tank 52 has been described, the present invention is not limited thereto. A switching valve, a drain flow path, and a drain tank may be provided on the main flow path 70 on the dissolution tank 52 side, and the cleaning liquid CL flowing to the dissolution tank 52 side may be discharged to the drain tank through the switching valve and the drain flow path. Alternatively, when the cleaning mechanism 110 is operated, it may be configured to completely discharge the first raw material RM1 in the dissolution tank 52 to empty the dissolution tank 52, and also clean the inside of the dissolution tank 52 using the cleaning liquid CL.

[0132] Modification Example 5

[0133] As an example, as Figure 18 shown, an antifoaming mechanism 120 may be provided in the dissolution tank 52. The antifoaming mechanism 120 includes a mounting member 121, a suction port 122, an internal rotating body 123, a motor 124, a liquid outlet 125, and the like. The suction port 122, the internal rotating body 123, and the liquid outlet 125 are arranged below the mounting member 121, and the motor 124 is arranged above the mounting member 121. The antifoaming mechanism 120 is an example of the "immersion suppression mechanism" related to the present invention.

[0134] The defoaming mechanism 120 is installed on the mounting hole 126 formed in the upper part of the dissolution tank 52 through the mounting member 121. Therefore, the suction port 122, the internal rotating body 123, and the liquid outlet 125 are arranged inside the dissolution tank 52. The suction port 122 faces the liquid surface of the first raw material RM1 inside the dissolution tank 52. The suction port 122 sucks the first raw material RM1, more precisely, the bubbles BRM1 generated on the liquid surface, into the interior of the defoaming mechanism 120. The internal rotating body 123 is rotated at a set rotational speed by the motor 124. The motor 124 is driven under the control of the control unit 13. The internal rotating body 123 crushes the bubbles BRM1 sucked by the suction port 122. The liquid outlet 125 returns the first raw material RM1 crushed by the internal rotating body 123 to the inside of the dissolution tank 52.

[0135] According to such a defoaming mechanism 120, it is possible to reduce the bubbles BRM1 which are the root cause of the clogging of the mesh of the filter 86. It is possible to further ensure the following effect: compared with the conventional filter 86, it is difficult for the mesh to be clogged, and it is possible to suppress the occurrence of defects caused by the clogging of the mesh of the filter 86.

[0136] The bent portion 71 may be a portion formed by connecting the descending section 78 and the relay section 80, and the relay section 80 and the ascending section 79 with a curve. In addition, the bent portion 71 may also be a V shape composed only of the descending section 78 and the ascending section 79 without the relay section 80. Furthermore, the descending section 78 and the ascending section 79 may each have both a linear section and a curved section. In addition, the descending section 78 and the ascending section 79 may be stepped. In short, as long as the bent portion 71 includes the descending section 78 and the ascending section 79, its shape is not particularly limited.

[0137] As the surfactant SF, as long as it is a compound having a hydrophilic group and a hydrophobic group (lipophilic group) in one molecule, it is not particularly limited, and for example, nonionic surfactants and anionic surfactants can be cited.

[0138] From the viewpoint of making the cleaning performance more excellent, the liquid medicine CS preferably contains the surfactant SF. Most surfactants SF have at least one hydrophobic group selected from the group consisting of aliphatic hydrocarbon groups, aromatic hydrocarbon groups, and groups formed by combining them. The total number of carbon atoms of the surfactant SF is preferably 16 to 100.

[0139] As nonionic surfactants, for example, ester-type nonionic surfactants, ether-type nonionic surfactants, and ester-ether-type nonionic surfactants can be cited. Among them, ether-type nonionic surfactants are preferred.

[0140] As a nonionic surfactant, for example, the compounds exemplified in paragraph 0126 of International Publication No. 2022 / 044893 can also be cited, and their contents are incorporated into this specification.

[0141] As an anionic surfactant, for example, there can be mentioned phosphate surfactants having a phosphate group, sulfonic acid surfactants having a sulfo group, phosphonic acid surfactants having a phosphonic acid group, carboxylic acid surfactants having a carboxyl group, and sulfate surfactants having a sulfate group.

[0142] As an anionic surfactant, for example, the compounds exemplified in paragraphs 0116 to 0123 of International Publication No. 2022 / 044893 can also be cited, and their contents are incorporated into this specification.

[0143] The content of the surfactant SF is preferably 0.0001 to 1.0% by mass, more preferably 0.001 to 0.8% by mass, based on the total mass of the liquid medicine CS. The surfactant SF can be used alone or in combination of two or more. When using two or more surfactants SF, it is preferred that their total content is within the above range.

[0144] The solvent is not particularly limited as long as it does not affect the semiconductor substrate, and pure water PW, distilled water, ion-exchanged water, etc. exemplified can be used. From the viewpoint of having less influence on the semiconductor substrate, pure water PW or ion-exchanged water is preferred. The content of water can be the balance of the components that can be included in the liquid medicine CS. The content of water is preferably 50.0 to 99.99% by mass, more preferably 60.0 to 98.0% by mass, and further preferably 65.0 to 85.0% by mass, based on the total mass of the liquid medicine CS.

[0145] From the viewpoint of improving the removal performance of the metal-containing substances, the liquid medicine CS preferably contains an organic acid. An organic acid is an organic compound having an acidic functional group. As the acidic functional group, for example, there can be mentioned a carboxyl group, a phosphonic acid group, a sulfo group, a phenolic hydroxyl group, and a mercapto group. In addition, in this specification, it is assumed that the organic acid does not include the compounds that function as the above-mentioned anionic surfactants.

[0146] The organic acid is not particularly limited, and there can be mentioned carboxylic acids (organic carboxylic acids) having a carboxyl group in the molecule, phosphonic acids (organic phosphonic acids) having a phosphonic acid group in the molecule, and sulfonic acids (organic sulfonic acids) having a sulfo group in the molecule. Among them, carboxylic acids or phosphonic acids are preferred.

[0147] The number of functional groups of the organic acid is not particularly limited, but is preferably 1 to 4, more preferably 1 to 3. In addition, from the viewpoint of making the cleaning performance more excellent, the organic acid is preferably a compound having a function of chelating with the metal contained in the residue, and more preferably a compound having two or more functional groups (ligands) that form coordination bonds with metal ions in the molecule. As the ligand, the above-mentioned acidic functional groups can be mentioned, and a carboxyl group or a phosphonic acid group is preferred.

[0148] The carboxylic acid may be a monocarboxylic acid having one carboxyl group or a polycarboxylic acid having two or more carboxyl groups. From the viewpoint of more excellent cleaning performance, a polycarboxylic acid having two or more (more preferably 2 to 4, further preferably 2 or 3) carboxyl groups is preferred.

[0149] Examples of the carboxylic acid include aminopolycarboxylic acids, amino acids, hydroxycarboxylic acids, and aliphatic carboxylic acids.

[0150] An aminopolycarboxylic acid is a compound having one or more amino groups and two or more carboxyl groups as ligands in the molecule. Examples of the aminopolycarboxylic acid include aspartic acid, glutamic acid, ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid (DTPA), ethylenediaminetetrapropionic acid, triethylenetetraminehexaacetic acid, 1,3-diamino-2-hydroxypropane-N,N,N',N'-tetraacetic acid, propylenediaminetetraacetic acid, ethylenediaminetetraacetic acid (EDTA), trans-1,2-cyclohexanediaminetetraacetic acid (CyDTA), ethylenediaminediacetic acid, ethylenediaminedipropionic acid, 1,6-hexanediamine-N,N,N',N'-tetraacetic acid, N,N-bis(2-hydroxybenzyl)ethylenediamine-N,N-diacetic acid, diaminopropanetetraacetic acid, 1,4,7,10-tetraazacyclododecane-tetraacetic acid, diaminopropanol tetraacetic acid, (hydroxyethyl)ethylenediaminetriacetic acid, and iminodiacetic acid (IDA). Among them, DTPA, EDTA, CyDTA, or IDA is preferred.

[0151] An amino acid is a compound having a carboxyl group and more than one amino group in the molecule. Examples of amino acids include glycine, serine, α-alanine (2-aminopropanoic acid), β-alanine (3-aminopropanoic acid), lysine, leucine, isoleucine, cystine, cysteine, methionine, ethionine, threonine, tryptophan, tyrosine, valine, histidine, histidine derivatives, asparagine, glutamine, arginine, proline, phenylalanine, the compounds described in paragraphs 0021 to 0023 of JP-A-2016-086094, and their salts. In addition, as histidine derivatives, the compounds described in JP-A-2015-165561 and JP-A-2015-165562 can be cited, and their contents are incorporated into this specification. Further, as salts, alkali metal salts such as sodium salts and potassium salts, ammonium salts, carbonates, and acetates can be cited.

[0152] Among them, histidine, histidine derivatives, or sulfur-containing amino acids containing a sulfur atom are preferred, and histidine or sulfur-containing amino acids are more preferred. Examples of sulfur-containing amino acids include cystine, cysteine, ethionine, and methionine, and cystine or cysteine is preferred.

[0153] A hydroxycarboxylic acid is a compound having more than one hydroxyl group and more than one amino group in the molecule. Examples of hydroxycarboxylic acids include malic acid, citric acid, glycolic acid, gluconic acid, heptanoic acid, tartaric acid, and lactic acid. Gluconic acid, glycolic acid, malic acid, tartaric acid, or citric acid is preferred, and gluconic acid or citric acid is more preferred.

[0154] Examples of aliphatic carboxylic acids include oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, sebacic acid, and maleic acid. Among them, adipic acid is preferred from the viewpoint of being able to improve the effects and cleaning performance of the present invention.

[0155] Examples of carboxylic acids other than the above aminopolycarboxylic acids, amino acids, hydroxycarboxylic acids, and aliphatic carboxylic acids include monocarboxylic acids. Examples of monocarboxylic acids include lower (carbon number 1 to 4) aliphatic monocarboxylic acids such as formic acid, acetic acid, propionic acid, and butyric acid.

[0156] As the carboxylic acid, amino acids, hydroxycarboxylic acids, or aliphatic carboxylic acids are preferred, cystine, cysteine, histidine, gluconic acid, glycolic acid, malic acid, tartaric acid, citric acid, or adipic acid are more preferred, and cysteine, gluconic acid, citric acid, or adipic acid are further preferred.

[0157] The carboxylic acid can be used alone or in combination of two or more. The content of the carboxylic acid is not particularly limited, and is preferably 0.1 to 35.0% by mass, more preferably 1.0 to 35.0% by mass, based on the total mass of the liquid medicine CS.

[0158] The phosphonic acid may be a monophosphonic acid having one phosphonic acid group or a polyphosphonic acid having two or more phosphonic acid groups. From the viewpoint of making the cleaning performance more excellent, a polyphosphonic acid having two or more phosphonic acid groups is preferred.

[0159] As the polyphosphonic acid, reference may be made to the compounds represented by General Formulas 1 to 3 described in paragraphs 0013 to 0023 of International Publication No. 2013 / 162020, the compounds described in paragraphs 0026 to 0036 of International Publication No. 2018 / 020878, and the compounds (co)polymers described in paragraphs 0031 to 0046 of International Publication No. 2018 / 030006, the contents of which are incorporated herein.

[0160] Examples of the polyphosphonic acid include ethylenediphosphonic acid, 1-hydroxyethane-1,1'-diphosphonic acid (HEDPO: 1-hydroxyethane-1,1-diphosphonic acid), 1-hydroxypropane-1,1'-diphosphonic acid, 1-hydroxybutane-1,1'-diphosphonic acid, ethylaminobis(methylenephosphonic acid), dodecylaminobis(methylenephosphonic acid), nitrilotris(methylenephosphonic acid) (NTPO: nitrilotris(methylphosphonic acid)), ethylenediaminebis(methylenephosphonic acid) (EDDPO: ethylenebis imino(methylene bisphosphonic acid)), 1,3-propanediaminebis(methylenephosphonic acid), ethylenediaminetetra(methylenephosphonic acid) (EDTPO: ethylene diamine tetra(methylene phosphonic acid)), ethylenediaminetetra(ethylenephosphonic acid), 1,3-propanediaminetetra(methylenephosphonic acid) (PDTMP: propylenediamine tetra(methylene phosphonic acid)), 1,2-diaminopropanetetra(methylenephosphonic acid), 1,6-hexanediaminetetra(methylenephosphonic acid), diethylenetriaminepenta(methylenephosphonic acid) (DEPPO: diethylenetriaminepenta(methylenephosphonic acid)), diethylenetriaminepenta(ethylenephosphonic acid), triethylenetetraminehexa(methylenephosphonic acid), and triethylenetetraminehexa(ethylenephosphonic acid). Among them, HEDPO is preferred.

[0161] The number of phosphonic acid groups possessed by the phosphonic acid is preferably 2 to 5, more preferably 2 to 4, and still more preferably 2 or 3. In addition, the number of carbon atoms of the phosphonic acid is preferably 12 or less, more preferably 10 or less, and still more preferably 8 or less. The lower limit is not particularly limited and is preferably 1 or more.

[0162] One kind of phosphonic acid can be used alone, or two or more kinds can be used in combination. The content of phosphonic acid is not particularly limited, and is preferably 0.001 to 5.0% by mass, more preferably 0.01 to 2.0% by mass, based on the total mass of the liquid medicine CS.

[0163] The organic acid is preferably of low molecular weight. More specifically, the molecular weight of the organic acid is preferably 600 or less, more preferably 450 or less, and further preferably 300 or less. The lower limit of the molecular weight of the organic acid is not particularly limited, but is preferably 85 or more. In addition, the number of carbon atoms of the organic acid is preferably 15 or less, more preferably 12 or less, and further preferably 8 or less. The lower limit of the number of carbon atoms of the organic acid is not particularly limited, but is preferably 1 or more.

[0164] One kind of organic acid can be used alone, or two or more kinds can be used in combination. The content of the organic acid is not particularly limited, and is preferably 0.1 to 40% by mass, more preferably 1.0 to 35% by mass, based on the total mass of the liquid medicine CS.

[0165] From the viewpoint of more excellent cleaning performance, the liquid medicine CS preferably contains carboxylic acid and phosphonic acid.

[0166] The liquid medicine CS may contain other components other than those described above. Examples of other components include pH adjusters (such as basic compounds and acidic compounds), organic solvents (such as alcohol solvents, glycol solvents, glycol ether solvents, and ketone solvents), water-soluble polymers (such as the water-soluble polymers described in paragraphs 0043 to 0047 of Japanese Patent Laid-Open No. 2016-171294), and oxidants (such as peroxides, persulfides, and percarbonates, their acids, and their salts).

[0167] Hereinafter, the properties of the liquid medicine CS will be described in detail.

[0168] The liquid medicine CS can be either basic or acidic. The pH of the liquid medicine CS is preferably 0.10 to 4.00. The pH of the liquid medicine CS can be adjusted using the above pH adjuster. The pH of the liquid medicine CS can be measured using a known pH detector and the method according to JIS (Japanese Industrial Standards) Z8802-1984. The measurement temperature is set at 25°C.

[0169] The content of metals (such as metal elements of Fe, Co, Na, Cu, Mg, Mn, Li, Al, Cr, Ni, Zn, Sn, and Ag) contained as impurities in the liquid medicine CS (measured as ion concentration) is preferably 5 mass ppm or less, more preferably 1 mass ppm or less. In the manufacture of the most advanced semiconductor devices, a higher purity liquid medicine CS is expected to be required. Therefore, the metal content is further preferably a value lower than 1 mass ppm, that is, below the mass ppb level, particularly preferably 100 mass ppb or less, and most preferably less than 10 mass ppb. As the lower limit, 0 is preferred.

[0170] The liquid medicine CS may also contain coarse particles, but it is preferably low in content. Coarse particles refer to particles with a diameter (particle size) of 0.03 μm or more when the shape of the particles is regarded as a sphere. The coarse particles contained in the liquid medicine CS refer to particles such as dust, dirt, organic solids, and inorganic solids contained as impurities in the raw materials; and particles such as dust, dirt, organic solids, and inorganic solids brought in as contaminants during the preparation of the liquid medicine CS, which are substances that ultimately do not dissolve in the liquid medicine CS and exist as particles.

[0171] As the content of coarse particles in the liquid medicine CS, the content of particles with a particle size of 0.1 μm or more per 1 mL of the liquid medicine CS is preferably 10,000 or less, more preferably 5,000 or less. Regarding the lower limit, per 1 mL of the liquid medicine CS, it is preferably 0 or more, more preferably 0.01 or more. The content of coarse particles present in the liquid medicine CS can be measured in the liquid phase using a commercially available measuring device with a light scattering type in-liquid particle measuring method using a laser as the light source.

[0172] Examples of the materials of the filters 21 and 37 include polyamides such as 6-nylon and 6,6-nylon, polyethylene, polypropylene, polystyrene, polyimide, polyamideimide, and fluororesins. Polyimide and polyamideimide may also have at least one selected from the group consisting of a carboxyl group, a salt-type carboxyl group, and an -NH- bond. Regarding solvent resistance, fluororesins, polyimide, and polyamideimide are excellent. In addition, from the viewpoint of adsorbing metal ions, polyamides such as 6-nylon and 6,6-nylon are preferred, and nylon is more preferred.

[0173] The filters 21 and 37 may also have a structure with a metal ion adsorption filter and an organic impurity adsorption filter. As the metal ion adsorption filter, a filter capable of ion exchange is preferred. As the metal ion adsorption filter, for example, the polyimide and / or polyamideimide porous membranes described in Japanese Patent Laid-Open No. 2016-155121 can be cited.

[0174] The organic impurity adsorption filter is not particularly limited, and known organic impurity adsorption filters can be cited. Among them, as the organic impurity adsorption filter, from the viewpoint of improving the adsorption performance of organic impurities, it is preferably one having an organic skeleton capable of interacting with organic impurities on the surface. In other words, the surface is modified by an organic skeleton capable of interacting with organic impurities. In addition, as the organic impurity adsorption filter, a filter in which activated carbon is fixed to a non-woven fabric as described in Japanese Patent Application Laid-Open No. 2002-273123 and Japanese Patent Application Laid-Open No. 2013-150979 can also be used.

[0175] As the filters 21 and 37, as long as they are filters conventionally used for filtration purposes or the like, there is no particular limitation. For example, filters made of fluororesins such as polytetrafluoroethylene (PTFE: Polytetrafluoroethylene) and tetrafluoroethylene perfluoroalkyl vinyl ether copolymer, polyamide resins such as nylon, and polyolefin resins such as polyethylene and polypropylene (PP: polypropylene) (including high density or ultra-high molecular weight) can be cited. Among these materials, materials selected from the group consisting of polyethylene, polypropylene (including high density polypropylene), fluororesins (including PTFE and PFA), and polyamide resins (including nylon) are preferred, and fluororesins are more preferred.

[0176] The semiconductor element to which the liquid medicine CS is applied is not particularly limited. As the semiconductor element, more specifically, for example, a logic LSI (Large Scale Integration), an ASIC (Application Specific Integrated Circuit), an FPGA (Field Programmable Gate Array), an ASSP (Application Specific Standard Product), etc., a microprocessor (for example, a CPU, a GPU (Graphics Processing Unit), etc.) can be cited.In addition, examples include memories (such as DRAM (Dynamic Random Access Memory), SRAM (Static Random Access Memory), HMC (Hybrid Memory Cube), MRAM (Magnetic RAM), PCM (Phase-Change Memory), ReRAM (Resistive RAM), FeRAM (Ferroelectric RAM), flash memory, etc.), LEDs (Light Emitting Diode), power devices, analog ICs (Integrated Circuit), such as DC (Direct Current)-DC converters, insulated gate bipolar transistors (IGBT: Insulated Gate Bipolar Transistor), MEMS (Micro Electro Mechanical Systems) such as acceleration sensors, pressure sensors, vibrators, gyro sensors, etc., such as GPS (Global Positioning System), FM (Frequency Modulation), NFC (Near field communication), RFEM (RF Expansion Module), MMIC (Monolithic Microwave Integrated Circuit), WLAN (Wireless Local Area Network), discrete components, BSI (Back Side Illumination), CIS (Contact Image Sensor), camera modules, passive devices, SAW (Surface Acoustic Wave) filters, RF (Radio Frequency) filters, RFIPD (Radio Frequency Integrated Passive Devices), BB (Broadband), etc.

[0177] The composition of the semiconductor constituting the semiconductor element is not particularly limited. Examples of the composition of the semiconductor include diamond, silicon (Si), germanium (Ge), silicon germanium (SiGe), silicon carbide (SiC), gallium arsenide (GaAs), gallium nitride (GaN), gallium oxide, and silicon on insulator (SOI), etc.

[0178] The above are only the preferred embodiments of the present application and are not intended to limit the present application. For those skilled in the art, various changes and modifications can be made to the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A manufacturing apparatus for a chemical solution used in semiconductor manufacturing, characterized in that, Comprising: A tank that accommodates at least one liquid as a raw material of the liquid medicine and performs injection and discharge of the liquid; A gas flow path, one end of which is connected to the tank and the other end is open to the outside, and is used for introducing and discharging gas to and from the tank when injecting and discharging the liquid; A filter provided in the gas flow path for filtering the gas inhaled or discharged from the open end of the gas flow path; A bent portion that forms a part of the gas flow path, including a descending section that descends as it approaches the filter in the direction from the tank to the filter, and an ascending section that ascends as it approaches the filter after the descending section; A liquid detection sensor provided in the gas flow path closer to the tank side than the ascending section for detecting the liquid immersed in the gas flow path; and A mechanism that, when the liquid detection sensor detects the liquid, performs at least one of discharging the liquid immersed in the gas flow path, interrupting the injection of the liquid into the tank, and closing the gas flow path; The mechanism includes a liquid discharging mechanism that discharges the liquid immersed in the gas flow path when the liquid detection sensor detects the liquid; The liquid discharging mechanism includes a liquid discharging flow path that is connected to the gas flow path between the liquid detection sensor and the filter.

2. The manufacturing apparatus for a chemical solution used in semiconductor manufacturing according to claim 1, characterized in that: The liquid discharging flow path is connected to the bent portion.

3. The manufacturing apparatus for a chemical solution used in semiconductor manufacturing according to claim 2, characterized in that: The liquid discharging flow path is connected to the lower end of the bent portion.

4. The manufacturing apparatus for a chemical solution for semiconductor manufacturing according to claim 1, characterized in that: A fluororesin layer is provided on the inner wall surface of the tank.

5. The manufacturing apparatus for the chemical solution used in semiconductor manufacturing according to claim 1, characterized in that: A liquid storage portion for storing the liquid immersed in the gas flow path is provided in the bent portion.

6. The manufacturing apparatus for the chemical solution used in semiconductor manufacturing according to claim 1, characterized in that: The liquid detection sensor is provided in the gas flow path closer to the tank side than the bent portion.

7. The manufacturing apparatus for a chemical solution used in semiconductor manufacturing according to claim 1, characterized in that: It further includes a cleaning mechanism for cleaning the gas flow path in which the liquid is immersed.

8. The manufacturing apparatus for a chemical solution for semiconductor manufacturing according to claim 7, characterized in that: The cleaning mechanism includes an introduction flow path that introduces a cleaning liquid into the portion of the gas flow path between the tank and the liquid detection sensor.

9. The manufacturing apparatus for a chemical solution used in semiconductor manufacturing according to claim 1, characterized in that: The gas flow path includes a plurality of branch flow paths each having the open end, and a filter is provided in each of the branch flow paths.

10. The manufacturing apparatus for a chemical solution used in semiconductor manufacturing according to claim 1, characterized in that: It further includes an immersion suppression mechanism that suppresses the immersion of the bubbly liquid generated on the liquid surface in the tank into the gas flow path.

11. The manufacturing apparatus for a chemical solution used in semiconductor manufacturing according to claim 1, characterized in that: The liquid contains a surfactant.

12. The manufacturing apparatus for a chemical solution used in semiconductor manufacturing according to claim 1, wherein: The tank is a dissolution tank for dissolving a solute in a solvent.

13. A manufacturing method of a chemical solution for semiconductor manufacturing, characterized in that, It includes a process of manufacturing using a manufacturing apparatus for a liquid medicine for semiconductor manufacturing according to any one of claims 1 to 12.

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