Spray head of semiconductor process equipment

Abstract

A dome cover and a gas uniformizing disc are relatively and fixedly assembled to form a gas uniformizing cavity, one or more heat conduction columns are installed in the gas uniformizing cavity, the two ends of each heat conduction column make contact with the dome cover and the gas uniformizing disc in a heat conduction mode respectively, and on one hand, the heat conduction columns can play a supporting role; the supporting strength between the dome cover and the gas uniformizing disc is enhanced; on the other hand, the heat conduction columns can play a role in heat conduction and are used for conducting heat between the dome cover and the gas uniformizing disc, and deformation caused by uneven temperature can be reduced; as the second end of the heat conduction column is provided with the hollow gap along the radial direction, and the hollow gap has no solid structure so as to allow the airflow to pass through, the interference to the airflow flowing state can be greatly reduced compared with a complete solid structure; besides, due to the existence of the hollowed-out notches, the contact area between the second ends of the heat conduction columns and the gas uniformizing disc is reduced, gas uniformizing channels can be arranged within the projection range of the heat conduction columns, and the gas uniformizing channels are distributed on the gas uniformizing disc in a more uniform and consistent density mode.

Description

Technical Field

[0001] The present application relates to the field of semiconductor processing technology, and further to a shower head for semiconductor process equipment. Background Art

[0002] A semiconductor shower head is a gas distribution device used in semiconductor manufacturing processes. It is used in physical vapor deposition (PVD), chemical vapor deposition (CVD), etching and other processes. The semiconductor process equipment shower head is mainly used to evenly distribute the gas into the reaction chamber to ensure that the semiconductor material can be evenly contacted with the gas during the reaction process, thereby improving production efficiency and product quality.

[0003] The semiconductor shower head is composed of a dome cover (Topplate) and a gas distribution plate (Faceplate) connected to each other to form a cavity. The outer edges of the dome cover and the gas distribution plate are relatively fixed. The semiconductor shower head is used in semiconductor equipment to evenly distribute the process gas on the wafer through the openings on the gas distribution plate. In some high-temperature (for example, around 180°C) scenarios, the heat conduction path of the semiconductor shower head is single (for example, heat conduction is conducted along the outer edge of the semiconductor shower head), resulting in a large temperature gradient between the upper and lower layers of the semiconductor shower head, large stress at the connection between the dome cover and the gas distribution plate, and a risk of deformation of the semiconductor shower head.

[0004] If an additional heat-conducting structure is provided in the inner cavity of the semiconductor shower head formed by the dome cover and the gas-uniform disk, the heat-conducting structure will affect the uniformity of the flow field and reduce the gas-uniformity effect.

[0005] For technicians in this field, how to reduce the risk of deformation caused by excessive temperature difference between the dome cover and the air distribution plate and reduce the interference with the air flow is a technical problem that needs to be solved at present. Summary of the invention

[0006] The present application sets a heat-conducting column to provide support and heat conduction between the dome cover and the air-distributing plate. A hollow gap is set on the heat-conducting column to reduce interference with the airflow. The hollow design will not block the air-distributing channel. The optional hole distribution forms are diversified. The specific scheme is as follows:

[0007] A semiconductor process equipment shower head comprises a dome cover and a gas uniforming plate which are relatively fixedly assembled to form a gas uniforming cavity. One or more heat-conducting columns are arranged in the gas uniforming cavity. The first end of the heat-conducting column is in heat-conducting contact with the dome cover, and the second end is in heat-conducting contact with the gas uniforming plate. The second end of the heat-conducting column is provided with a hollow notch in the radial direction.

[0008] The heat-conducting column of the present application is provided with a hollow gap, and one end of the heat-conducting column provided with the hollow gap contacts the gas-distributing disk. The hollow gap reduces the contact area with the gas-distributing disk, reduces the shielding area, and can reduce the obstruction and interference to the airflow. The distribution of the gas-distributing channels on the gas-distributing disk is more diversified. The heat-conducting column can conduct heat and bear part of the stress, and improves the uniformity of gas distribution of the entire semiconductor shower head by strengthening support, accelerating heat conduction, and reducing airflow obstruction.

[0009] In a possible implementation, each heat-conducting column is axially opposite to one of the multiple gas-uniform channels provided on the gas-uniform disk. In this solution, one heat-conducting column is axially opposite to one gas-uniform channel, and other gas-uniform channels that are not axially opposite to the heat-conducting column are not interfered by the heat-conducting column, thus limiting the influence range of the heat-conducting column and only having a limited influence on individual gas-uniform channels.

[0010] In a possible implementation, each heat-conducting column is axially opposite to the central axis of a group of gas-uniform channels that are centrally symmetrically distributed and are arranged on the gas-uniform disk. In this solution, one heat-conducting column is axially opposite to more than two gas-uniform channels, and each heat-conducting column has a larger size, stronger support capacity, and stronger heat-conducting capacity. The structural layout of the heat-conducting column is determined according to the performance requirements of the shower head of the semiconductor process equipment.

[0011] In a possible implementation, the air-distributing channels provided on the air-distributing disk are distributed in a triangular array, and each air-distributing channel is distributed at the vertices of an equilateral triangle. The heat-conducting column provided with a hollow notch can reduce the contact area with the air-distributing disk, and the air-distributing channels on the air-distributing disk can be distributed more densely and more evenly, which helps to improve the uniformity of the ejected airflow.

[0012] In a possible implementation, the plurality of hollow notches provided on the heat-conducting column are centrally symmetrically distributed about the axis of the heat-conducting column. The hollow notches in all directions around the heat-conducting column have a more uniform effect on the airflow, avoiding uneven obstruction to the airflow due to the size differences of the hollow notches, thereby improving the consistency of the airflow ejection.

[0013] In a possible implementation, the number of hollow gaps provided on each heat-conducting column is more than three. Providing more than three hollow gaps on a heat-conducting column can make the adjustment space of the occupied area of ​​the support foot larger. On the one hand, it is necessary to minimize the obstruction of the support foot to the airflow between the hollow gaps, which helps to improve the uniformity of airflow discharge. On the other hand, there needs to be sufficient contact area between the support foot and the air distribution plate to maintain heat conduction and support force. The occupied area of ​​the support foot needs to be balanced between the flow field and the thermal conductivity efficiency and the support stability.

[0014] In a possible implementation, the inner diameter of the air-uniform channel within the axial projection range of the heat-conducting column is larger than the inner diameter of the air-uniform channel not within the projection range. The hollow gap can reduce the obstruction to the airflow, but cannot completely eliminate the obstruction. Therefore, the air-uniform channel within the axial projection range of the heat-conducting column is affected by the heat-conducting column. When the inner diameter is equal to that of other air-uniform channels, the discharged airflow will be weaker than that of other air-uniform channels. By increasing the inner diameter of the air-uniform channel within the projection range, the resistance of the air-uniform channel to the airflow is reduced, and the influence of the heat-conducting column on the airflow is balanced. Regardless of whether the air-uniform channel is axially facing the heat-conducting column, the resistance to the airflow remains uniform and consistent.

[0015] In a possible implementation, a size change region is provided in the uniform gas channel located within the axial projection range of the heat-conducting column, and the inner diameter of the size change region gradually decreases along the airflow direction; the flow resistance of the uniform gas channel located within the axial projection range of the heat-conducting column is smaller than the flow resistance of the uniform gas channel not within the projection range. The flow resistance of the uniform gas channel can be reduced not only by increasing the inner diameter of the entire uniform gas channel, but also by increasing the local inner diameter of the uniform gas channel.

[0016] In a possible implementation, the gas uniforming channel located within the axial projection range of the heat-conducting column is provided with at least two step sections with different inner diameters, and each step section is columnar.

[0017] In a possible implementation, a plurality of heat-conducting columns are centrally symmetrically distributed about the axis of the gas-distributing disk, and the heat-conducting columns are distributed on at least one circumference. The heat-conducting columns still have an impact on the normal flow of the airflow, so the plurality of heat-conducting columns are centrally symmetrically evenly distributed about the central axis, and have a more uniform impact on the airflow in the circumferential direction of the entire gas-distributing disk.

[0018] In a possible implementation, the dimensions and shapes of the heat-conducting columns on the same circumference and the distribution of the hollow gaps are the same. In order to ensure that the heat-conducting columns have a consistent effect on the airflow, the dimensions and shapes of the heat-conducting columns at the same distance from the central axis and the distribution of the hollow gaps are completely consistent, reducing the influencing variables.

[0019] In a possible implementation, the heat conducting column and the dome cover are integrally formed.

[0020] In a possible implementation, the heat conducting column and the gas uniforming disk are integrally formed.

[0021] In a possible implementation, the cavity further includes a baffle disposed in the gas uniforming cavity, a heat-conducting column is integrally formed on the baffle, and the heat-conducting column is disposed at a temperature monitoring point of the baffle.

[0022] The thermal conductive column can be fixed in different installation forms. The above three situations can achieve the effects of support, heat conduction and reducing airflow obstruction.

[0023] In a possible implementation, the height of the hollow notch is greater than its width, and the first end of the hollow notch is arched. By reducing the sharp structure of the hollow notch, a smoother shape is formed, thereby affecting the airflow distribution more evenly. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0025] Figure 1 This is an axonometric cross-sectional view of a shower head of a semiconductor process equipment according to an embodiment of the present application;

[0026] Figure 2 This is a front cross-sectional view of a shower head of a semiconductor process equipment according to an embodiment of the present application;

[0027] Figure 3A This is a front cross-sectional view of the embodiment of the present application in which the diameters of the uniform gas channels are all equal;

[0028] Figure 3B This is a front cross-sectional view of the embodiment of the present application in which the diameters of the uniform gas channels are not completely equal;

[0029] Figure 3C It is a front view cross-sectional view of a plurality of gas uniformity channels with variable cross-sections in the embodiment of the present application;

[0030] Figure 4A It is an axonometric diagram of a first embodiment of a heat-conducting column;

[0031] Figure 4B It is an axonometric diagram of a second embodiment of a heat-conducting column;

[0032] Figure 4C It is an axonometric diagram of a third embodiment of a heat-conducting column;

[0033] Figure 4D is an axonometric view of a fourth embodiment of a heat-conducting column;

[0034] Figure 4E is an axonometric view of a fifth embodiment of a heat-conducting column;

[0035] Figure 4F is an axonometric view of a sixth embodiment of a heat-conducting column;

[0036] Figure 5A It is an axonometric view of a first embodiment of a gas-distributing disk;

[0037] Figure 5BIt is an axonometric view of a second embodiment of the gas distribution disk;

[0038] Fig. 6A This is an axonometric diagram of a first embodiment in which a heat-conducting column is fixed to a gas-distributing disk;

[0039] Figure 6B This is an axonometric diagram of a second embodiment in which a heat-conducting column is fixed to a gas-distributing disk;

[0040] Figure 6C The isometric view of the third embodiment in which the heat-conducting column is fixed to the gas-distributing plate;

[0041] Fig.6D The isometric view of the fourth embodiment in which the heat-conducting column is fixed to the gas-distributing plate;

[0042] Figure 7 An axonometric diagram of an embodiment in which a heat-conducting column is fixed to a dome cover;

[0043] Figure 8 The isometric diagram of an embodiment in which a heat-conducting column is fixed to a baffle;

[0044] Fig. 9 Design a flow chart for the thermal column;

[0045] Fig.10 This is a comparison chart of the flow field uniformity results along the radial direction in three cases: no heat-conducting column, solid heat-conducting column, and hollow heat-conducting column;

[0046] Fig.11A It is a vertical cross-sectional streamline diagram using hollow heat-conducting columns;

[0047] Fig. 11B It is a horizontal cross-sectional streamline diagram using a hollow heat-conducting column;

[0048] Fig. 12A The flow field distribution of the horizontal cross section at the same height without heat-conducting pillars;

[0049] Fig. 12B The flow field distribution of the horizontal cross section of the solid heat-conducting column at the same height;

[0050] Fig. 12C The flow field distribution of the horizontal cross-section of the hollow heat-conducting column at the same height;

[0051] Fig.13 Under three conditions: no thermal conductive column, solid thermal conductive column, and hollow thermal conductive column Figure 1 Stress distribution diagram at the X position.

[0052] Description of reference numerals:

[0053] 10-dome cover; 101-air inlet channel; 102-guiding plate; 20-gas uniform disk; 201-gas uniform channel; 30-gas uniform cavity; 40-heat conducting column; 401-hollow gap; 402-support foot; 50-baffle; 501-diversion channel. DETAILED DESCRIPTION

[0054] In the semiconductor production process, the process gas is evenly blown out with the help of the semiconductor process equipment shower head. The uniformity of the air flow field will affect the effect of the process treatment. The temperature difference causes the gas uniformity plate to deform, and the heat conductive structure hinders the air flow and affects the air flow distribution.

[0055] The present application provides a semiconductor process equipment shower head, which uses a heat-conducting column to conduct heat between a dome cover and an air-distributing plate, so that the temperature distribution at each position of the air-distributing plate is more uniform, and the hollow notches provided by the heat-conducting column have less resistance to the airflow, thereby reducing interference with the airflow. The semiconductor process equipment shower head of the present application not only makes the temperature distribution more uniform, but also helps to reduce the obstruction to the airflow, so that the ejected airflow forms a more uniform distribution.

[0056] In order to enable those skilled in the art to better understand the technical solution of the present application, the semiconductor process equipment shower head of the present application will be described in detail below in conjunction with the accompanying drawings and specific implementation methods. The terms used in the following embodiments are only for the purpose of describing specific embodiments and are not intended to be limiting of the present application. As used in the specification and appended claims of the present application, the singular expressions "one", "a kind", "some", "above", "the" and "this" are intended to also include expressions such as "one or more", unless the context clearly indicates otherwise. The directional expressions involved below are described in the direction shown in the corresponding drawings and do not represent the direction of actual use.

[0057] Embodiment 1:

[0058] The present application provides a semiconductor process equipment shower head for uniformly discharging process gas. The semiconductor process equipment shower head includes a dome cover 10 (Topplate) and a gas homogenizing plate 20 (Faceplate). The dome cover 10 and the gas homogenizing plate 20 are fixedly assembled to form a whole, forming the main structure of the entire semiconductor process equipment shower head. The dome cover 10 and the gas homogenizing plate 20 are relatively fixedly assembled to form a gas homogenizing chamber 30. The gas homogenizing chamber 30 is a hollow chamber structure, and the interior is used to accommodate process gas. The external process gas enters the gas homogenizing chamber 30 from the dome cover 10, and the process gas in the gas homogenizing chamber 30 is discharged from the gas homogenizing channel 201 set in the gas homogenizing plate 20. The gas homogenizing plate 20 is provided with a plurality of gas homogenizing channels 201 distributed in an array. The gas homogenizing channels 201 are arranged through, one end is connected to the gas homogenizing chamber 30, and the other end is used for exhaust. The end of each gas-uniform channel 201 is connected to the gas-uniform chamber 30 , and the process gas in the gas-uniform chamber 30 flows outward from each gas-uniform channel 201 , so that the process gas is discharged uniformly.

[0059] Combination Figure 1 , Figure 2 , Figure 5A , Figure 5B As shown, in some embodiments, the gas-distributing disk 20 includes a disc-shaped bottom plate and a cylindrical side wall, which serves as the bottom plate and side wall of the semiconductor process equipment shower head, and a plurality of gas-distributing channels 201 are distributed in an array on the bottom plate of the gas-distributing disk 20. The dome cover 10 is installed on the top of the gas-distributing disk 20, which serves as the top plate of the semiconductor process equipment shower head. The edges of the dome cover 10 are fixedly connected to the gas-distributing disk 20, and the edges of the dome cover 10 are in thermal contact with the gas-distributing disk 20, so that heat conduction is achieved between the edges of the dome cover 10 and the gas-distributing disk 20.

[0060] An air inlet channel 101 for the process air flow to enter is arranged on the dome cover 10, and a guide plate 102 is arranged opposite to the air inlet channel 101. The guide plate 102 is located below the air inlet channel 101 and within the uniform air chamber 30; there is a certain distance between the guide plate 102 and the dome cover 10, and the process air flow flows into the air inlet channel 101 and impacts the guide plate 102, and is blocked and guided by the guide plate 102 to be evenly distributed around, so that the process air flow can flow evenly to various positions in the uniform air chamber 30. The bottom plate of the uniform air plate 20 is a flat plate, and the guide plate 102 can also be a flat plate. It should be noted that the specific structure of the dome cover 10 and the uniform air plate 20 is not limited in this application, as long as the uniform air chamber 30 can be formed; the shape and size of the guide plate 102 are not specifically limited, and can be set according to the process requirements, but the guide plate 102 should be smaller than the area of ​​the dome cover 10.

[0061] One or more heat-conducting columns 40 are arranged in the gas-uniform cavity 30, each heat-conducting column 40 is a long strip structure, the length direction of the heat-conducting column 40 is consistent with the through direction of the gas-uniform channel 201, the first end and the second end are the two ends of the length direction, the first end of the heat-conducting column 40 is in thermal contact with the dome cover 10, and the second end is in thermal contact with the gas-uniform disk 20; Figure 1 , Figure 2 As shown, the first end of the heat-conducting column 40 is the upper end, and the second end is the lower end. The heat-conducting column 40 is made of a rigid heat-conducting material, and the heat-conducting column 40 can form a support between the dome cover 10 and the gas-distributing plate 20 on the one hand, and can conduct heat between the dome cover 10 and the gas-distributing plate 20 on the other hand.

[0062] The heat conducting column 40 is located within the air uniforming cavity 30. Compared with the edges of the dome cover 10, the heat conducting column 40 is located closer to the middle of the dome cover 10. The two ends of the heat conducting column 40 rigidly contact the dome cover 10 and the air uniforming plate 20 respectively, providing a supporting force between the dome cover 10 and the air uniforming plate 20, so that the middle area of ​​the dome cover 10 and the air uniforming plate 20 is additionally supported, thereby improving the integrity between the dome cover 10 and the air uniforming plate 20, improving the rigidity of the original suspended area between the dome cover 10 and the air uniforming plate 20, and reducing possible deformation.

[0063] In addition, the heat-conducting column 40 has a high heat-conducting efficiency. Heat is conducted between the dome cover 10 and the gas-distributing plate 20 through the heat-conducting column 40. The dome cover 10 and the gas-distributing plate 20 conduct heat to each other not only through the contact positions of the edges around them, but also through the heat-conducting column 40 in the middle area between the dome cover 10 and the gas-distributing plate 20. Compared with the traditional single conduction path, the existence of the heat-conducting column 40 adds an additional heat conduction path, so that the middle area between the dome cover 10 and the gas-distributing plate 20 can achieve heat conduction more quickly and efficiently. It is no longer just conducting heat from the edge area to the middle area, but the edge area and the middle area conduct heat synchronously, so that the edge area and the middle area maintain a relatively consistent temperature, so that the temperature gradient between the dome cover 10 and the gas-distributing plate 20 of the semiconductor process equipment shower head is small, avoiding excessive stress at the connection between the dome cover 10 and the gas-distributing plate 20, thereby reducing the risk of deformation of the shower head.

[0064] The temperature between the dome cover 10 and the gas-distributing plate 20 is not constant, but changes dynamically and is relative. Taking the heater on the dome cover 10 as an example, when the temperature is lower than the set value, the heater is turned on, and the heat conduction path is conducted from the dome cover 10 to the gas-distributing plate 20; when the temperature is higher than the set value, the heater is turned off, and the heat conduction path is reversed, and the heat conduction path is conducted from the gas-distributing plate 20 to the dome cover 10. Regardless of the direction of heat conduction, the heat is simultaneously conducted in the surrounding edge areas where the dome cover 10 and the gas-distributing plate 20 are in contact, as well as in the middle area where the heat-conducting column 40 is located, which not only improves the temperature uniformity around and in the middle, but also enables the dome cover 10 and the gas-distributing plate 20 to maintain temperature synchronization more quickly.

[0065] It should be noted that the heat-conducting column 40 in the present application can be a columnar shape such as a cylinder or a prism, or a cone or a pyramid with a changed cross section. The heat-conducting column 40 can be a solid column or a hollow column.

[0066] Furthermore, the present application provides a hollow notch 401 along the radial direction at the second end of the heat-conducting column 40. The hollow notch 401 extends along the radial direction, and forms a hollow area without a solid structure at the second end face of the heat-conducting column 40, that is, the hollow notch 401 simultaneously forms a hollow area on the second end face of the heat-conducting column 40 and the second end side wall of the hollow notch 401. The hollow notch 401 extends radially about the central axis of the heat-conducting column 40. The hollow notch 401 extends from the central axis of the heat-conducting column 40 to the side wall. A hollow area without a solid structure formed on the side wall of the heat-conducting column 40 is a hollow notch 401. At least two hollow notches 401 should be provided on one heat-conducting column 40, that is, at least two mutually independent hollow areas are formed on the side wall of the heat-conducting column 40.

[0067] Combination 4A to 4F As shown, a support foot 402 is formed between two adjacent hollow notches 401 on a heat-conducting column 40. The cross-sectional area of ​​the support foot 402 is smaller than the cross-sectional area of ​​the entire heat-conducting column 40. The contact area between the support foot 402 and the air-distributing plate 20 is smaller, and the space occupied on the surface of the air-distributing plate 20 is reduced.

[0068] There is no solid structure at the hollow notch 401, which allows the process gas to flow. The heat-conducting column 40 adopts a hollow bottom structural design. The hollow notch 401 avoids covering the gas-uniform channel 201 provided on the gas-uniform disk 20, that is, the position on the gas-uniform disk 20 axially facing the heat-conducting column 40 can be provided with the gas-uniform channel 201. If the heat-conducting column 40 does not have a hollow notch 401, the position on the gas-uniform disk 20 axially facing the heat-conducting column 40 cannot be opened, and the airflow state in this area will be different from the airflow state in other areas, resulting in uneven airflow distribution; the air-uniform channels 201 on the gas-uniform disk 20 are distributed in a regular array, and the other corresponding positions in the array cannot be provided with through holes to ensure the overall airflow uniformity even though the heat-conducting column 40 is not provided; in addition, the boundary effect of the solid side wall around the heat-conducting column 40 will interfere with the nearby gas-uniform channels 201, affecting the uniform distribution of airflow. The heat conducting column 40 of the present application is designed with a hollow notch 401 to allow an opening to be set at a position directly opposite the heat conducting column 40, so that the gas uniformity channels 201 opened on the entire gas uniformity plate 20 are distributed more evenly and densely.

[0069] The heat conductive column 40 of the present application is provided with a hollow notch 401, allowing the process gas on the side to form a radial flow and then pass through the uniform gas channel 201 directly opposite the heat conductive column 40. The cross-section of the supporting foot 402 is smaller and the obstruction to the air flow is weaker, so that the process gas can flow to each uniform gas channel 201 more evenly.

[0070] The present application solves the problem of limited hole selection and poor gas uniformity effect of the gas uniformity channel 201 on the gas uniformity plate 20 by providing a heat-conducting column 40 with a hollow notch 401, so that the entire semiconductor process equipment shower head can achieve higher structural strength, more uniform heat conduction, and more uniform airflow distribution.

[0071] Embodiment 2:

[0072] On the basis of the above embodiment, the main feature of this embodiment is the corresponding relationship between the heat conducting column 40 and the uniform gas channel 201, which specifically includes two specific embodiments:

[0073] 1) In some embodiments, each heat-conducting column 40 is axially aligned with one of the plurality of gas-distributing channels 201 disposed on the gas-distributing disk 20, such as Figure 1 , Fig. 6AAs shown, a heat-conducting column 40 is axially opposite to only one of the gas-uniform channels 201, and the axial projection of the heat-conducting column 40 only covers one gas-uniform channel 201. In this structure, the central axis of the heat-conducting column 40 is colinear with the central axis of the gas-uniform channel 201 to ensure that the heat-conducting column 40 has a circumferentially uniform effect on the gas-uniform channel 201 covered by its projection. Each heat-conducting column 40 is independently arranged, and other gas-uniform channels 201 that are not facing the heat-conducting column 40 are almost not affected by the heat-conducting column 40.

[0074] In the structure where each heat-conducting column 40 faces a uniform air channel 201 , the outer diameter of the heat-conducting column 40 is slightly larger than the diameter of the uniform air channel 201 , but the outer edge of the heat-conducting column 40 should not exceed the center line between two adjacent uniform air channels 201 to reduce air flow interference to other uniform air channels 201 .

[0075] 2) In some embodiments, each heat-conducting column 40 is axially aligned with the central axis of a group of gas-distributing channels 201 disposed on the gas-distributing plate 20 and symmetrically distributed. Figure 6B In the structure shown, multiple heat-conducting columns 40 are provided, each heat-conducting column 40 is annular, and multiple hollow notches 401 are evenly provided around the circle. The projection of each heat-conducting column 40 along the axial direction covers multiple uniform air channels 201, and the central axis of each heat-conducting column 40 is collinear with the central line of the multiple uniform air channels 201 covered by its projection, forming a uniform influence on each uniform air channel 201 covered by its projection. Each heat-conducting column 40 is independent of each other and evenly distributed in the uniform air cavity 30, so that heat is evenly conducted.

[0076] Figure 6C In the structure shown, a heat-conducting column 40 is provided, and the heat-conducting column 40 is annular, and a plurality of hollow notches 401 are evenly provided along a circumference, and the central axis of the heat-conducting column 40 is kept collinear with the central axis of the entire gas-distributing disk 20. The diameter of the heat-conducting column 40 is between 1 / 3 and 2 / 3 of the diameter of the gas-distributing disk 20, and can be set to half the diameter of the gas-distributing disk 20, so as to ensure both support and uniformity of heat conduction. Figure 6C and Figure 6B In comparison, the projected coverage area of ​​the heat conductive column 40 is larger.

[0077] Embodiment three:

[0078] Based on the above embodiment, the main feature of this embodiment is the array distribution of the gas-distributing channels 201 on the gas-distributing disk 20. Figure 5A , Figure 5B As shown, the gas uniformity channels 201 provided on the gas uniformity disk 20 are distributed in a triangular array, and each gas uniformity channel 201 is distributed at the vertices of an equilateral triangle. Figure 5AThe hexagon in the figure shows the triangular array distribution state of the uniform air channel 201 located in the middle position. A uniform air channel 201 is set at each of the six vertices of the hexagon, and a uniform air channel 201 is set at the center point of the hexagon, that is, the uniform air channel 201 at the center point forms a triangle with the uniform air channels 201 at the six vertices. Since the heat-conducting column 40 of the present application is provided with a hollow notch 401, the uniform air channels 201 on the entire uniform air disk 20 can be arranged and distributed according to the same rule. The hollow notch 401 reduces the interference with the uniform air channel 201, and the hole shape distribution on the uniform air disk 20 is freer, solving the restrictive problem of the limited hole shape selection and poor uniform air effect of the uniform air disk 20. The distribution state of the uniform air channel 201 of this embodiment is only used as a specific setting form, and it is not required to be distributed only in this way, and it can also be distributed in other ways.

[0079] Embodiment 4:

[0080] On the basis of the above-mentioned embodiment, the main feature of this embodiment is the arrangement of the hollow notches 401. For the multiple hollow notches 401 arranged on one heat-conducting column 40, the several hollow notches 401 on the heat-conducting column 40 are centrally symmetrically distributed about the axis of the heat-conducting column 40, so that the support legs 402 between the hollow notches 401 are centrally symmetrically distributed, and the support legs 402 form a certain obstruction to the airflow, and the obstruction effect of each support leg 402 on the airflow is uniformly distributed.

[0081] Of course, for the heat conducting column 40 at the side wall of the gas uniforming plate 20, the distribution states of the hollow notches 401 on the side away from the side wall and the side close to the side wall can be designed differently, and in this case, the hollow notches 401 are no longer distributed symmetrically around the center.

[0082] In some embodiments, the number of hollow notches 401 provided on each heat-conducting column 40 is more than three. 4A to 4F As shown, there are shown different numbers of hollow notches 401 arranged on the heat-conducting column 40. Figure 4A , Figure 4B The state of four hollow openings 401 is shown. Figure 4C , Figure 4D The state of three hollow notches 401 is shown. Figure 4E The state where five hollow gaps 401 are set is shown. FIG. 4A to FIG. 4E All five structures are solid columns. Figure 4F The heat conducting column 40 is shown to be in the form of a hollow column. Figure 4F In addition, Figure 6B , Figure 6CIt is also a hollow column. The contact area between the support foot 402 and the air distribution disk 20 cannot be too small, otherwise the heat conduction and supporting force will be deteriorated. On the one hand, it is necessary to minimize the obstruction of the support foot 402 to the air flow between the hollow notches 401 to improve the uniformity of air flow discharge. On the other hand, there needs to be enough contact area between the support foot and the air distribution disk, which cannot be too small, to maintain heat conduction and supporting force; it is necessary to balance the flow field with the heat conduction efficiency and the support stability. For the case where the cross-sectional area of ​​the heat-conducting column 40 itself is small (for example, facing an air distribution channel 201), fewer hollow notches 401 (for example, three or four, generally not more than five) should be set; for the case where the cross-sectional area of ​​the heat-conducting column 40 itself is large (for example Figure 6B , Figure 6C Facing the plurality of gas uniformity channels 201 ), more hollow notches 401 (more than five) may be provided.

[0083] Embodiment five:

[0084] Based on the above embodiment, the main feature of this embodiment is the size relationship between the various gas homogenizing channels 201. There are two types:

[0085] 1) In some embodiments, the inner diameter of the gas-uniform channel 201 within the axial projection range of the heat-conducting column 40 is larger than the inner diameter of the gas-uniform channel 201 not within the projection range. In this structure, each gas-uniform channel 201 has a constant inner diameter, and the cross-sectional area of ​​each gas-uniform channel 201 at each axial position remains equal. Figure 3B As shown, the gas uniformity channel 201 (A) is not within the projection range, the gas uniformity channel 201 (B) falls within the axial projection range of the heat conducting column 40, and the diameter Φ201 (B) is greater than the diameter Φ201 (A).

[0086] Since the gas uniforming channel 201 falling within the axial projection range of the heat conductive column 40 is still affected by the support foot 402, the resistance of the gas uniforming channel 201 (A) is smaller than the resistance of the gas uniforming channel 201 (B) relative to the gas uniforming channel 201 not within the projection range. Therefore, the gas uniforming channel 201 (B) adopts a larger diameter. The larger inner cavity diameter can reduce the resistance to the airflow. By increasing the inner diameter of the gas uniforming channel 201 (B) itself, the resistance of the gas uniforming channel 201 (A) and the gas uniforming channel 201 (B) to the airflow is kept close, and finally the process gas discharged from the gas uniforming channel 201 at each position is more uniform.

[0087] 2) In some embodiments, the uniform gas channel 201 located within the axial projection range of the heat-conducting column 40 is provided with a size-changing region, that is, the cross-sectional area of ​​the uniform gas channel 201 itself along the axial direction is not completely the same, and there is a changing region; the inner diameter of the size-changing region gradually decreases along the airflow direction. The maximum inner diameter of the size-changing region should be larger than the inner diameter of the uniform gas channel 201 not within the projection range, so that the flow resistance of the uniform gas channel 201 located within the axial projection range of the heat-conducting column 40 is smaller than the flow resistance of the uniform gas channel 201 not within the projection range.

[0088] The gas-uniform channel 201 may be provided with different structures in the form of a size-changing area, such as a conical inner cavity surface or a stepped shape formed by splicing a number of cylinders with different diameters. The gas-uniform channel 201 located within the axial projection range of the heat-conducting column 40 is provided with at least two stepped sections with different inner diameters, each of which is cylindrical, that is, each section has the same cross-sectional area at each position along the axial direction. Figure 3C As shown, the uniform gas channel 201 (C) is not within the projection range, and the uniform gas channel 201 (D) falls within the axial projection range of the heat-conducting column 40. The uniform gas channel 201 (D) is in a stepped form. Figure 6C The example of setting two stages is shown, and the setting of three or more stages is not excluded.

[0089] for Figure 6C In the structure shown, the inner diameter of the lower section is smaller, so that the inner diameter of the lowest section can be kept equal to that of other gas-uniform channels 201 that are not within the projection range, and increases upwards.

[0090] Embodiment six:

[0091] On the basis of the above embodiment, the main feature of this embodiment is the distribution state of the heat-conducting columns 40. A plurality of heat-conducting columns 40 are centrally symmetrically distributed about the axis of the gas-distributing disk 20, the spacing between each heat-conducting column 40 and the central axis of the gas-distributing disk 20 is equal, and the angles between the lines connecting two adjacent heat-conducting columns 40 and the central axis of the gas-distributing disk 20 are equal, so as to ensure that each heat-conducting column 40 produces a uniform effect at each position in the circumferential direction of the entire gas-distributing disk 20.

[0092] The heat-conducting columns 40 are distributed on at least one circumference, and the distances between the heat-conducting columns 40 on the same circumference and the central axis of the gas-distributing disk 20 are equal. Fig. 6A As shown, six heat-conducting pillars 40 are provided, all of which are located on the same circumference. Fig.6D In the illustrated structure, the heat-conducting pillars 40 are respectively located on two different circumferences. The number of heat-conducting pillars 40 on each circumference may be equal or unequal.

[0093] In some embodiments, the size and shape of the thermal conductive columns 40 located on the same circumference and the distribution of the hollow gaps 401 are the same. For example, multiple thermal conductive columns 40 on the same circumference are respectively provided with four hollow gaps 401, and multiple thermal conductive columns 40 on another circumference are respectively provided with five hollow gaps 401. It is not required that the thermal conductive columns 40 located on different circumferences are provided with an equal number of hollow gaps 401.

[0094] Embodiment seven:

[0095] Based on the above embodiment, the main feature of this embodiment is the fixed installation form of the heat-conducting column 40. There are mainly three types of settings:

[0096] 1) The heat conducting column 40 and the dome cover 10 are integrally formed and combined Figure 7 As shown, the state of the heat-conducting column 40 being arranged on the dome cover 10 is shown. The heat-conducting column 40 is integrated in the dome cover 10 in an integrated manner, and the second end of the heat-conducting column 40 is welded to the gas-distributing plate 20 during assembly.

[0097] 2) The heat conducting column 40 and the gas distribution plate 20 are integrally formed and combined FIG. 6A to FIG. 6D As shown, the state of the heat-conducting column 40 being arranged on the gas-distributing plate 20 is shown. The heat-conducting column 40 is integrated in the gas-distributing plate 20 in an integrated manner. During assembly, the first end of the heat-conducting column 40 is welded to the dome cover 10.

[0098] 3) It also includes a baffle 50 disposed in the gas-uniform cavity 30, combined with Figure 2 , Figure 8 As shown, the baffle 50 is located between the gas uniforming plate 20 and the dome cover 10, and the edges of the baffle 50 are fixed on the inner surface of the side wall of the gas uniforming plate 20. The gas input from the dome cover 10 first passes through the baffle 50 and then reaches the gas uniforming channel 201 on the gas uniforming plate 20. A number of diversion channels 501 are evenly arranged on the baffle 50, and the inner diameter of the diversion channel 501 is larger than the inner diameter of the gas uniforming channel 201. The sizes of the diversion channels 501 arranged on the baffle 50 are equal, and the number of the diversion channels 501 is less than the number of the gas uniforming channels 201. Before the airflow reaches the gas uniforming channel 201, the process gas is diverted once, and the process gas passes through the diversion channel 501 and the gas uniforming channel 201 twice for distribution, so as to further improve the uniformity of the process gas distribution. The baffle 50 is integrally formed with a heat-conducting column 40, and the heat-conducting column 40 is arranged at the temperature monitoring point of the baffle 50. Figure 8 The heat conducting column 40 is shown to be arranged at the temperature monitoring point. A semiconductor process equipment shower head can only be arranged with one temperature monitoring point. Figure 8Only one heat-conducting column 40 is shown. In addition, other heat-conducting columns 40 can be integrally formed and arranged on the baffle 50. The two ends of the heat-conducting column 40 are respectively welded to the gas-distributing plate 20 and the dome cover 10 during assembly.

[0099] For the structure provided with the baffle 50 , the heat-conducting pillars 40 can conduct heat to the baffle 50 , so that each position of the baffle 50 maintains a uniform temperature, thereby reducing deformation of the baffle 50 caused by excessive temperature difference.

[0100] When a baffle 50 is provided in the shower head of the semiconductor process equipment, an escape channel may also be provided on the baffle 50 to allow the heat conducting column 40 fixed on the gas uniforming plate 20 or the dome cover 10 to pass through.

[0101] Embodiment eight:

[0102] In some embodiments, in combination Figure 4E , Figure 4F As shown, the height of the hollow notch 401 is greater than its width, the first end of the hollow notch 401 is arched, and the end of the hollow notch 401 not in contact with the air distribution plate 20 is an arc-shaped arch to avoid forming a sharp corner so that the airflow can pass smoothly.

[0103] The design process of thermal conductive column is as follows: Fig. 9 As shown, according to the flow field and temperature field uniformity indicators, the hollowing scheme, distribution scheme, uniform air channel hole type near the heat conductive column 40 and other parameters are designed; then the process simulation analysis is carried out, and if the indicators are not met, the design needs to be redesigned. After the indicators are met, the heat release true analysis stage is entered; if the heat release true analysis meets the indicators, the design is completed, and if the indicators are not met, the design needs to be redesigned.

[0104] by Figure 1 The specific design process is shown in the example of the sprinkler head in the figure: for the uniform air channel 201 with a diameter of φ1 and a regular triangle distribution, the axis of the heat-conducting column 40 is located at r=0.02m, and the schemes of no heat-conducting column, solid heat-conducting column (shielding the uniform air channel facing the heat-conducting column), and hollow heat-conducting column are simulated and analyzed respectively, and the flow field uniformity results along the radial direction at the same position are obtained. Fig.10 As shown, the flow field uniformity of the solid thermal conductive column is significantly deteriorated at the position where the uniform air channel is shielded, while the flow field uniformity of the hollow thermal conductive column is basically the same as that of the condition without a thermal conductive column.

[0105] For the hollow thermal column solution, such as Fig.11A , Fig. 11B As shown in the figure, the streamline diagrams of the vertical section and the horizontal section are shown respectively. There is no dead zone or backflow in the flow field near the hollow heat conducting column.

[0106] Fig. 12A , Fig. 12B , Fig. 12CAs shown, the flow field uniformity results of the horizontal cross-section at the same height under three conditions: no thermal conductive column, solid thermal conductive column, and hollow thermal conductive column are displayed. The difference between no thermal conductive column and hollow thermal conductive column is small, and the uniformity is significantly deteriorated at the position where the solid thermal conductive column blocks the uniform air channel.

[0107] Fig. 12A , Fig. 12B , Fig. 12C The statistical information of the flow field data is shown in Table 1. The flow field discreteness of the solid thermal conductive column is poor and does not meet the requirements. The mean and discreteness of the flow field data of the hollow thermal conductive column are close to the condition without thermal conductive column, which meets the flow field design index requirements.

[0108]

[0109] Thermal Simulation Comparison Figure 1 The stress distribution at the X position under three conditions: no thermal conductive column, solid thermal conductive column, and hollow thermal conductive column. The simulation results are as follows Fig.13 As shown, the stress difference under the three thermal conductive column conditions is small, and the maximum stress is 23Mpa, which meets the requirements of aluminum materials, indicating that the hollow thermal conductive column design in this application meets the stress requirements.

[0110] The above preferred embodiments further illustrate the purpose, technical solutions and advantages of the present application in detail. It should be understood that the above are only preferred embodiments of the present application and are not intended to limit the present application. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present application should be included in the protection scope of the present application.

Claims

1. A semiconductor process equipment shower head, characterized in that: It comprises a dome cover (10) and a gas-distributing plate (20) which are relatively fixedly assembled to form a gas-distributing cavity (30), wherein one or more heat-conducting columns (40) are arranged in the gas-distributing cavity (30), and a first end of the heat-conducting column (40) is in heat-conducting contact with the dome cover (10) and a second end is in heat-conducting contact with the gas-distributing plate (20); The second end of the heat-conducting column (40) is provided with a hollow notch (401) along the radial direction.

2. The semiconductor process equipment shower head according to claim 1, characterized in that: Each of the heat-conducting columns (40) is axially aligned with one of the plurality of gas-distributing channels (201) provided on the gas-distributing disk (20).

3. The semiconductor process equipment shower head according to claim 1, characterized in that: Each of the heat-conducting columns (40) is axially aligned with the central axis of a group of the gas-uniform channels (201) arranged on the gas-uniform disk (20) and distributed in a centrally symmetrical manner.

4. The semiconductor process equipment shower head according to claim 1, characterized in that: The gas uniformity channels (201) provided on the gas uniformity disk (20) are distributed in a triangular array, and each of the gas uniformity channels (201) is distributed at a vertex of an equilateral triangle.

5. The semiconductor process equipment shower head according to claim 1, characterized in that: The plurality of hollow notches (401) provided on the heat-conducting column (40) are distributed in a centrally symmetrical manner with respect to the axis of the heat-conducting column (40).

6. The shower head according to claim 1, characterized in that: The number of the hollow notches (401) provided on each of the heat-conducting columns (40) is more than three.

7. The semiconductor process equipment shower head according to any one of claims 2 to 6, characterized in that: The inner diameter of the gas uniformity channel (201) located within the axial projection range of the heat-conducting column (40) is larger than the inner diameter of the gas uniformity channel (201) not within the projection range.

8. The semiconductor process equipment shower head according to any one of claims 2 to 6, characterized in that: The gas-uniform channel (201) located within the axial projection range of the heat-conducting column (40) is provided with a size-changing region, and the inner diameter of the size-changing region gradually decreases in a direction approaching the gas-uniform disk (20); The flow resistance of the gas uniformity channel (201) located within the axial projection range of the heat-conducting column (40) is smaller than the flow resistance of the gas uniformity channel (201) not within the projection range.

9. The semiconductor process equipment shower head according to claim 8, characterized in that: The gas uniforming channel (201) located within the axial projection range of the heat-conducting column (40) is provided with at least two step sections with different inner diameters, and each step section is columnar.

10. The semiconductor process equipment shower head according to any one of claims 1 to 9, characterized in that: The plurality of heat-conducting columns (40) are distributed in a centrally symmetrical manner about the axis of the gas-distributing disk (20), and the heat-conducting columns (40) are distributed on at least one circumference.

11. The semiconductor process equipment shower head according to claim 10, characterized in that: The dimensions and shapes of the heat-conducting columns (40) located on the same circumference and the distribution of the hollow notches (401) are all the same.

12. The semiconductor process equipment shower head according to any one of claims 1 to 9, characterized in that: The heat-conducting column (40) and the dome cover (10) are integrally formed.

13. The semiconductor process equipment shower head according to any one of claims 1 to 9, characterized in that: The heat conducting column (40) and the gas homogenizing plate (20) are integrally formed.

14. The semiconductor process equipment shower head according to any one of claims 1 to 11, characterized in that: It also includes a baffle (50) disposed in the gas uniforming cavity (30), the heat-conducting column (40) being integrally formed on the baffle (50), and the heat-conducting column (40) being disposed at a temperature monitoring point of the baffle (50).

15. The semiconductor process equipment shower head according to any one of claims 1 to 14, characterized in that: The height of the hollow notch (401) is greater than its width, and the first end of the hollow notch (401) is arched.

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