Temperature detection circuit, display panel, display device and temperature detection method

Abstract

The invention provides a temperature detection circuit, a display panel, a display device and a temperature detection method, the temperature detection circuit comprises a first field effect transistor and a second field effect transistor; the source electrode of the first field effect transistor is connected with the source electrode of the second field effect transistor; the grid electrode of the first field effect transistor is grounded after being connected with the grid electrode of the second field effect transistor; the drain electrode of the first field effect transistor and the drain electrode of the second field effect transistor are respectively connected with the input end of the temperature detection circuit; the first resistance of the first line between the drain electrode of the first field effect transistor and the input end is a first number of times of the second resistance of the second line between the drain electrode of the second field effect transistor and the input end. The temperature detection circuit can be prepared and formed on the substrate of the display panel, the influence on the thickness and the use freedom degree of the display panel is small, the temperature detection circuit can be arranged in the display area of the display panel, and the temperature of the display area can be accurately measured.

Description

Technical Field

[0001] The present disclosure relates to the technical field of displays, and in particular to a temperature detection circuit, a display panel, a display device, and a temperature detection method. Background Art

[0002] This section is intended to provide a background or context to the embodiments of the disclosure that are recited in the claims. No description herein is admitted to be prior art by inclusion in this section.

[0003] As a physical characteristic of panel display technology, electrical properties will change when the screen is exposed to high temperatures, and real-time feedback of the panel's temperature state is required to adjust the working mode.

[0004] In the temperature testing scheme in the related art, an external temperature sensing device is usually attached to the border area of ​​the display panel to perform temperature testing.

[0005] However, the above solution will have a significant impact on the thickness and freedom of use of the display panel. At the same time, since the external temperature sensing device is attached to the frame area of ​​the display panel, the temperature of the display area of ​​the display panel cannot be accurately measured. Summary of the invention

[0006] In view of this, the purpose of the present disclosure is to provide a temperature detection circuit, a display panel, a display device and a temperature detection method, which at least to a certain extent solve one of the technical problems in the related art.

[0007] Based on the above purpose, the first aspect of the exemplary embodiment of the present disclosure provides a temperature detection circuit, including:

[0008] a first field effect transistor and a second field effect transistor;

[0009] The source of the first field effect transistor is connected to the source of the second field effect transistor;

[0010] The gate of the first field effect transistor is connected to the gate of the second field effect transistor and then grounded;

[0011] The drain of the first field effect transistor and the drain of the second field effect transistor are respectively connected to the input end of the temperature detection circuit;

[0012] The first resistance of the first line between the drain of the first field effect transistor and the input terminal is a first number times the second resistance of the second line between the drain of the second field effect transistor and the input terminal, and the first number is greater than one.

[0013] In some exemplary embodiments, electrical characteristic parameters of the first field effect transistor and the second field effect transistor are the same.

[0014] In some exemplary embodiments, both the first field effect transistor and the second field effect transistor are thin film transistor-based field effect transistors.

[0015] In some exemplary embodiments, a line width of the first line is the same as a line width of the second line, and a line length of the first line is the first number times greater than a line length of the second line.

[0016] In some exemplary embodiments, a line length of the first line is the same as a line length of the second line, and a line width of the second line is the first number times greater than the line width of the first line.

[0017] Based on the same inventive concept, a second aspect of the exemplary embodiment of the present disclosure provides a display panel, including:

[0018] A substrate and a temperature detection circuit according to the first aspect arranged on the substrate.

[0019] In some exemplary embodiments, the temperature detection circuit is fabricated on the substrate.

[0020] In some exemplary embodiments, the temperature detection circuit is located in a display area of ​​the display panel.

[0021] Based on the same inventive concept, the third aspect of the exemplary embodiment of the present disclosure provides a display device, including:

[0022] A display panel as described in the second aspect.

[0023] Based on the same inventive concept, a fourth aspect of the exemplary embodiment of the present disclosure provides a temperature detection method, which is applied to the temperature detection circuit as described in the first aspect, and the method includes:

[0024] Input voltage through the input terminal;

[0025] Acquire a first voltage value of the first circuit and a second voltage value of the second circuit, and obtain a voltage difference based on the first voltage value and the second voltage value;

[0026] Based on the voltage difference, a temperature value of an environment in which the temperature detection circuit is located is obtained.

[0027] In some exemplary embodiments, obtaining the temperature value of the environment in which the temperature detection circuit is located based on the voltage difference includes calculating using the following formula:

[0028]

[0029] Wherein, d is the derivative symbol, V is the voltage difference, T is the temperature value, K is the Boltzmann constant, q is the charge of the electron, ln is the sign of the natural logarithm function, and n is the multiple between the first resistor and the second resistor.

[0030] As can be seen from the above, the temperature detection circuit, display panel, display device and temperature detection method provided by the embodiment of the present disclosure include: a first field effect transistor and a second field effect transistor; the source of the first field effect transistor is connected to the source of the second field effect transistor; the gate of the first field effect transistor is connected to the gate of the second field effect transistor and then grounded; the drain of the first field effect transistor and the drain of the second field effect transistor are respectively connected to the input end of the temperature detection circuit; wherein the first resistance of the first circuit between the drain of the first field effect transistor and the input end is the first number times the second resistance of the second circuit between the drain of the second field effect transistor and the input end, and the first number is greater than one. The temperature detection circuit provided by the present disclosure can be prepared and formed on the substrate of the display panel, so the thickness of the display panel and the degree of freedom of use are less affected. At the same time, the temperature detection circuit can be set in the display area of ​​the display panel, so the temperature of the display area of ​​the display panel can be accurately measured. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In order to more clearly illustrate the technical solutions in the present disclosure or related technologies, the drawings required for use in the embodiments or related technical descriptions are briefly introduced below. Obviously, the drawings described below are only embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0032] Figure 1 A schematic diagram of a temperature detection circuit provided by an exemplary embodiment of the present disclosure;

[0033] Figure 2 A schematic flow chart of a temperature detection method provided by an exemplary embodiment of the present disclosure;

[0034] Figure 3 A schematic diagram of a temperature-voltage variation curve provided for an exemplary embodiment of the present disclosure;

[0035] Figure 4 Another structural schematic diagram of a temperature detection circuit provided by an exemplary embodiment of the present disclosure;

[0036] Figure 5 Another structural schematic diagram of a temperature detection circuit provided by an exemplary embodiment of the present disclosure. DETAILED DESCRIPTION

[0037] In order to make the purpose, technical solutions and advantages of the present disclosure more clear, the principles and spirit of the present disclosure will be described with reference to several exemplary embodiments. It should be understood that these embodiments are provided only to enable those skilled in the art to better understand and implement the present disclosure, and are not intended to limit the scope of the present disclosure in any way. On the contrary, these embodiments are provided to make the present disclosure more thorough and complete, and to fully convey the scope of the present disclosure to those skilled in the art.

[0038] It should be understood herein that any number of elements in the drawings is for illustration rather than limitation, and any naming is only for distinction rather than having any limiting meaning.

[0039] It should be noted that, unless otherwise defined, the technical terms or scientific terms used in the embodiments of the present disclosure should be understood by people with ordinary skills in the field to which the present disclosure belongs. The "first", "second" and similar words used in the embodiments of the present disclosure do not represent any order, quantity or importance, but are only used to distinguish different components. "Including" or "comprising" and similar words mean that the elements or objects appearing in front of the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Connecting" or "connected" and similar words are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly. The article "one" or "an" before an element does not exclude the existence of multiple such elements.

[0040] The principle and spirit of the present disclosure are explained in detail below with reference to several representative embodiments of the present disclosure.

[0041] As a physical characteristic of panel display technology, electrical properties will change when the screen is exposed to high temperatures, and real-time feedback of the panel's temperature state is required to adjust the working mode.

[0042] At present, stability in the industrial control field is one of the important indicators of industrial control systems. Once a system fails, it may cause the production line to stop, causing huge losses. Therefore, related equipment in the industrial control field must ensure high reliability. LCD modules used in the industrial control field also need to have high reliability. Some special application fields such as the application of aerospace detection screen display modules require LCD modules to ensure long-term operation at high temperatures.

[0043] In the temperature testing scheme in the related art, an external temperature sensing device is usually attached to the border area of ​​the display panel to perform temperature testing.

[0044] However, the inventors of the present disclosure discovered that the above scheme will have a significant impact on the thickness of the display panel and the freedom of use. At the same time, since the external temperature sensing device is attached to the border area of ​​the display panel, the temperature of the display area (AA area, in the display panel, AA area refers to the effective display area, that is, the area actually used to display images) of the display panel cannot be accurately measured.

[0045] Since the temperature of the core circuit of the display area of ​​the display panel cannot be accurately measured, the demand for high-quality display products with wide temperature, high brightness and high reliability cannot be met.

[0046] In order to solve the above problems, the present disclosure provides a temperature detection circuit that can be used for a display panel, the temperature detection circuit comprising: a first field effect transistor and a second field effect transistor; the source of the first field effect transistor is connected to the source of the second field effect transistor; the gate of the first field effect transistor is connected to the gate of the second field effect transistor and then grounded; the drain of the first field effect transistor and the drain of the second field effect transistor are respectively connected to the input end of the temperature detection circuit; wherein the first resistance of the first circuit between the drain of the first field effect transistor and the input end is a first number times the second resistance of the second circuit between the drain of the second field effect transistor and the input end, and the first number is greater than one.

[0047] The temperature detection circuit provided by the present invention can be prepared on the substrate of the display panel, so it has little impact on the thickness and freedom of use of the display panel. At the same time, the temperature detection circuit can be set in the display area of ​​the display panel, so it can accurately measure the temperature of the display area of ​​the display panel.

[0048] After introducing the basic principles of the present disclosure, various non-limiting embodiments of the present disclosure are described in detail below.

[0049] Next, the structure of the temperature detection circuit will be introduced:

[0050] refer to Figure 1 , which is a structural schematic diagram of a temperature detection circuit provided by an exemplary embodiment of the present disclosure.

[0051] Next, we will introduce the components in the temperature detection circuit:

[0052] The temperature detection circuit includes: a first field effect transistor 101 and a second field effect transistor 102 .

[0053] In some exemplary embodiments, the electrical characteristic parameters of the first field effect transistor 101 and the second field effect transistor 102 are the same.

[0054] In specific implementation, the first field effect transistor 101 and the second field effect transistor 102 follow the same process steps and parameter control in the manufacturing process flow, and achieve precise matching from the structure type of the transistor to its electrical performance indicators, and belong to transistors of the same specifications, ensuring substitutability and performance consistency in circuit applications. Electrical characteristic parameters including but not limited to key parameters such as threshold voltage, current driving capability, and transconductance are consistent at the design and manufacturing levels, and their geometric dimensions (such as gate length L, gate width W) and physical properties such as doping concentration of semiconductor materials are also exactly the same, and can be regarded as transistors of the same specifications.

[0055] In this exemplary embodiment, the first field effect transistor 101 and the second field effect transistor 102 are field effect transistors of the same specification.

[0056] The purpose of using the first field effect transistor 101 and the second field effect transistor 102 as field effect transistors of the same specification is to make the reverse saturation leakage current of the first field effect transistor 101 and the reverse saturation leakage current of the second field effect transistor 102 equal to facilitate temperature detection. The specific principle will be described in detail in subsequent embodiments.

[0057] In some exemplary embodiments, both the first field effect transistor 101 and the second field effect transistor 102 are thin film transistor (TFT) based field effect transistors.

[0058] In this exemplary embodiment, both the first field effect transistor 101 and the second field effect transistor 102 are field effect transistors formed on a thin film transistor substrate. In this case, the thickness of the display panel and the degree of freedom of use are less affected.

[0059] In the above exemplary embodiment, the components in the temperature detection circuit, namely the first field effect transistor 101 and the second field effect transistor 102, are introduced. The connection relationship between the first field effect transistor 101 and the second field effect transistor 102 in the temperature detection circuit will be described below:

[0060] The source of the first field effect transistor 101 is connected to the source of the second field effect transistor 102 .

[0061] The gate (Gate) of the first field effect transistor 101 and the gate (Gate) of the second field effect transistor 102 are connected and then grounded.

[0062] In this exemplary embodiment, the gate (Gate) of the first field effect transistor 101 is connected to the gate (Gate) of the second field effect transistor 102 and then connected to the ground line 103 .

[0063] The drain of the first field effect transistor 101 and the drain of the second field effect transistor 102 are respectively connected to the input terminal 104 of the temperature detection circuit.

[0064] In this exemplary embodiment, the common source and common gate connection is used to stabilize and unify the electrical environment of the first field effect transistor 101 and the second field effect transistor 102. Since the working environment of the first field effect transistor 101 and the second field effect transistor 102 is consistent, the voltage difference is only related to the temperature, ensuring the stability of the output voltage.

[0065] The first resistance of the first line between the drain of the first field effect transistor 101 and the input terminal 104 is a first number times the second resistance of the second line between the drain of the second field effect transistor 102 and the input terminal 104, and the first number is greater than one.

[0066] In this exemplary embodiment, the method of making the first resistor the first number times of the second resistor includes:

[0067] In some exemplary embodiments, a line width of the first line is the same as a line width of the second line, and a line length of the first line is the first number times greater than a line length of the second line.

[0068] In some exemplary embodiments, a line length of the first line is the same as a line length of the second line, and a line width of the second line is the first number times greater than the line width of the first line.

[0069] In the above exemplary embodiments, the basic structure of the temperature detection circuit for performing temperature detection is introduced. In some exemplary embodiments, the measured parameters need to be exported to calculate the temperature value. Therefore, the first interface 105 and the second interface 106 are also provided in the temperature detection circuit.

[0070] The first interface 105 is used to derive a first voltage value of the first circuit, and the second interface 106 is used to derive a second voltage value of the second circuit. A voltage difference is obtained based on the first voltage value and the second voltage value, and a temperature value of the environment in which the temperature detection circuit is located is obtained based on the voltage difference.

[0071] In the above exemplary embodiments, the structure of the temperature detection circuit is introduced. Next, a method for performing temperature detection by using the temperature detection circuit will be introduced:

[0072] refer to Figure 2 , which is a flow chart of a temperature detection method provided by an exemplary embodiment of the present disclosure.

[0073] The temperature detection method comprises the following steps:

[0074] Step S210: input voltage through the input terminal.

[0075] In this exemplary embodiment, reference Figure 1 A driving voltage is applied from the outside (the outside is relative to the temperature detection circuit) through the input terminal 104.

[0076] Since the drain (Drain) of the first field effect transistor 101 is connected to the drain (Drain) of the second field effect transistor 102 and then connected to the input terminal 104, the first field effect transistor 101 is driven by the drain (Drain) of the first field effect transistor 101, and the second field effect transistor 102 is driven by the drain (Drain) of the second field effect transistor 102.

[0077] Step S220: Obtain a first voltage value of the first circuit and a second voltage value of the second circuit, and obtain a voltage difference based on the first voltage value and the second voltage value.

[0078] As an example, see Figure 1 , obtain the first voltage value V of the first line through the first interface 105 eb1 , obtain the second voltage value V of the second line through the second interface 106 eb2 , based on the first voltage value V eb1 and the second voltage value V eb2 , we get the voltage difference V, V = V eb1 -V eb2 .

[0079] Step S230: obtaining a temperature value of an environment in which the temperature detection circuit is located based on the voltage difference.

[0080] As an example, the temperature value of the environment where the temperature detection circuit is located is obtained based on the voltage difference by the following formula:

[0081]

[0082] Wherein, d is the derivative symbol, V is the voltage difference, T is the temperature value, K is the Boltzmann constant, q is the charge of the electron, ln is the sign of the natural logarithm function, and n is the multiple between the first resistor and the second resistor.

[0083] In addition, although the operations of the disclosed method are described in a particular order in the accompanying drawings, this does not require or imply that the operations must be performed in this particular order, or that all the operations shown must be performed to achieve the desired results. On the contrary, the steps depicted in the flow chart can be performed in a different order. Additionally or alternatively, some steps can be omitted, multiple steps can be combined into one step, and / or one step can be decomposed into multiple steps.

[0084] In the above exemplary embodiments, the structure of the temperature detection circuit and the method of temperature detection by the temperature detection circuit are introduced. Next, the principle of temperature detection by the temperature detection circuit will be introduced:

[0085] The parameters of the first field effect transistor 101 and the second field effect transistor 102 are the same, that is, the reverse saturation leakage current I of the first field effect transistor 101 and the second field effect transistor 102 is s1 and I s2 Equal, using Figure 1 The bias circuit shown makes the collector current of the first field effect transistor 101 n times the collector current of the second field effect transistor 102. Since the currents of the first field effect transistor 101 and the second field effect transistor 102 are n times related, a voltage difference between a first voltage value of the first circuit and a second voltage value of the second circuit is realized, which is recorded as V.

[0086] Due to the reverse saturation leakage current I s Depends on the temperature expression (1):

[0087]

[0088] Among them, I s is the reverse saturation leakage current, u pb is the average mobility of minority carriers in the base region, n i is the mobility of electrons, K is the Boltzmann constant, T is the absolute temperature, A e is the area of ​​the emission region, w b is the base width, N Db is the base doping concentration, let q is the charge of the electron. The leakage current of the field effect transistor is related to factors such as current, voltage, and temperature. The equilibrium leakage current is calculated using formula (2):

[0089] I c =I s exp(V eb / V T );

[0090] The forward voltage of a PNP field effect transistor is given by formula (3):

[0091]

[0092] Due to the same process and the same panel (display panel), the reverse saturation leakage current I of two TFT-based field effect transistors of the same design is s1 =I s2 , so the emitter potential difference is formula (4):

[0093]

[0094] Taking the derivative of temperature T, we get (5):

[0095]

[0096] It can be seen that the V of the two field effect transistors connected in this way eb The difference is only related to temperature, and the voltage change is proportional to the temperature. Figure 1 ) constitutes this temperature detection circuit, which can well realize temperature detection, and the output voltage increases with the increase of temperature. The voltage depends on V T The q value at different temperatures, that is, the q of the field effect transistor is different at different temperatures, and then the voltage generated varies with the temperature difference.

[0097] Through the above exemplary embodiments, after the temperature changes, it generates different output voltages as the temperature rises, outputs the voltage changes at different temperatures to the outside, and obtains the temperature value based on the voltage change.

[0098] In order to verify the validity of this disclosure, refer to Figure 3 , which is a temperature-voltage variation curve detected by the temperature detection circuit provided by the present disclosure.

[0099] The display panel is measured at different temperatures under 1000LUV (lux, which refers to the intensity of light energy received per unit area. 1000LUX means that under certain conditions, the light intensity reaches 1000 lumens per square meter).

[0100] like Figure 3 As shown, the horizontal axis is temperature, and the vertical axis is the change in voltage (expressed by Δid). The temperature sensing curve (temperature-voltage change curve) has a clear and stable rule. Therefore, the temperature detection circuit provided in the present invention can be used as a temperature sensing element of a display panel.

[0101] Based on the same inventive concept, corresponding to the temperature detection circuit provided in any of the above embodiments, the present disclosure further provides a display panel.

[0102] The display panel includes a substrate and a temperature detection circuit provided on the substrate as provided in any of the above embodiments.

[0103] Wherein, the temperature detection circuit is configured to detect the temperature of the display panel.

[0104] In some exemplary embodiments, the temperature detection circuit is fabricated on the substrate.

[0105] In the related art, one temperature sensing solution is to wrap a metal wire around the panel (display panel) as a temperature resistor to realize a temperature sensing component. However, the metal process of the panel (display panel) will also affect the frame and transmittance due to the influence of the line width and metal process thickness. At the same time, because the upper limit of the process is very low, the temperature change is within 5 ohms, and the generated voltage value is difficult to be obtained by the peripheral information processing circuit (20 to 30 ohms), and it cannot be applied in practice.

[0106] In the present disclosure, the temperature detection circuit can be prepared on the substrate of the display panel, so it will not affect the frame and transmittance.

[0107] Next, we will introduce the method of making a temperature detection circuit:

[0108] refer to Figure 4 In this exemplary embodiment, a method for manufacturing a temperature detection circuit includes:

[0109] First, a Gate electrode 402 of a field effect transistor is deposited on a glass substrate (Glass) 401 to enable the operation of the temperature sensing unit element.

[0110] In this exemplary embodiment, the Gate electrodes 402 of a plurality of field effect transistors may be patterned and connected to each other and connected by wires.

[0111] SiN film formation is performed to cover the entire Gate electrode 402, forming a first SiN film 403, which is also patterned for protection.

[0112] The injected a-si material is used as the poly layer 404, which is the main semiconductor medium and is the main raw material for realizing the current-voltage and light-sensing functions of the field effect transistor.

[0113] SD deposition and SD patterning are performed to complete the placement of the Drain electrode 405 and the Source electrode 406, so as to realize the insertion and output of the field effect transistor driving voltage, and also serve as the output electrode of the temperature sensing element.

[0114] SiN film formation is performed to cover the entire SD electrode to form a second SiN film 407, which is also patterned for protection.

[0115] Functional vias are formed and ITO is deposited as the conductive lines 408 of the driving electrodes connected to the driving circuit.

[0116] Through the above-mentioned manufacturing method, a temperature sensing circuit composed of multiple MOS (field effect) tubes with temperature sensing function as basic units is prepared through thin film transistors of amorphous silicon process. The field effect transistor includes an insulating layer composed of SiN (silicon nitride) as the main material, a semiconductor layer composed of poly (polycrystalline silicon) as the main material, a Source electrode (source) and a Drain electrode (drain) composed of metal electrodes, the Drain electrode is connected to the external driving signal through ITO (indium tin oxide) wiring, and the Gate electrode (gate) is responsible for the switch control of the field effect transistor device. At the same time, in order to achieve the observability of the output current, the output pins of multiple field effect transistors are connected in parallel to form a temperature sensing device array to complete the output.

[0117] TFT-based field effect transistors are mainly composed of a glass substrate, a gate electrode, a gate insulating layer, a semiconductor active layer Poly, a source and drain electrode, and a protective film, etc. Among them, the gate insulating layer and the protective film are generally made of SiN, and the Poly layer is made of a-Si material.

[0118] In some exemplary embodiments, the temperature detection circuit is located in a display area of ​​the display panel.

[0119] In the related art, since the external temperature sensing device is attached to the frame area of ​​the display panel, the temperature of the display area (AA area, in the display panel, AA area refers to the effective display area, that is, the area actually used to display images) of the display panel cannot be accurately measured.

[0120] In the present disclosure, the temperature detection circuit can be prepared on the substrate of the display panel. Therefore, the temperature detection circuit can be set in the display area of ​​the display panel, so it can accurately measure the temperature of the display area of ​​the display panel, and can accurately measure the temperature of the core circuit of the display area of ​​the display panel, which can meet the demand for high-quality display products with wide temperature, high brightness and high reliability.

[0121] The present invention realizes the perception of the temperature of the LCD panel by designing a new TFT-based field effect transistor temperature detection circuit in the panel, and then feeds back the temperature of the key position of the panel to the system. The system can perform system-level debugging such as backlight current, working voltage, working timing, etc. according to the temperature of the panel, or be compatible with the redundant design in the early stage of the design, realize multi-channel drive simultaneous / time-sharing control module state switching, and ensure display quality and module life.

[0122] refer to Figure 5 , which is a schematic diagram of the microstructure of the temperature detection circuit provided by the present invention.

[0123] The source of the first field effect transistor 101 is connected to the source of the second field effect transistor 102 .

[0124] The gate of the first field effect transistor 101 is connected to the gate of the second field effect transistor 102 and then connected to the ground line 103 .

[0125] The drain of the first field effect transistor 101 is connected to the drain of the second field effect transistor 102 and then connected to an input terminal (not shown in the figure).

[0126] The first interface 105 is used to derive a first voltage value of the first circuit of the first field effect transistor 101, and the second interface 106 is used to derive a second voltage value of the second circuit of the second field effect transistor 102. Based on the first voltage value and the second voltage value, a voltage difference is obtained, and based on the voltage difference, a temperature value of the environment in which the temperature detection circuit is located is obtained.

[0127] It should be noted that the above application scenarios are only shown to facilitate understanding of the spirit and principle of the present disclosure, and the embodiments of the present disclosure are not limited in this respect. On the contrary, the embodiments of the present disclosure can be applied to any applicable scenario.

[0128] Based on the same inventive concept, corresponding to the display panel provided by any of the above embodiments, the present disclosure also provides a display device.

[0129] The display device includes a display panel as provided in any of the above embodiments, and the display panel includes a substrate and a temperature detection circuit as provided in any of the above embodiments arranged on the substrate.

[0130] It should be noted that the above application scenarios are only shown to facilitate understanding of the spirit and principle of the present disclosure, and the embodiments of the present disclosure are not limited in this respect. On the contrary, the embodiments of the present disclosure can be applied to any applicable scenario.

[0131] It should be noted that the above describes some embodiments of the present disclosure. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps recorded in the claims can be performed in an order different from that in the above embodiments and still achieve the desired results. In addition, the processes depicted in the drawings do not necessarily require the specific order or sequential order shown to achieve the desired results.

[0132] Those skilled in the art should understand that the discussion of any of the above embodiments is merely illustrative and is not intended to imply that the scope of the present application (including the claims) is limited to these examples. In line with the concept of the present application, the technical features in the above embodiments or different embodiments may be combined, the steps may be implemented in any order, and there are many other variations of the different aspects of the embodiments of the present application as described above, which are not provided in detail for the sake of simplicity.

[0133] In addition, to simplify the description and discussion, and in order not to make the embodiments of the present application difficult to understand, the known power supply / ground connection with the integrated circuit (IC) chip and other components may or may not be shown in the provided drawings. Where specific details (e.g., circuits) are described to describe exemplary embodiments of the present application, it is apparent to those skilled in the art that the embodiments of the present application may be implemented without these specific details or with variations in these specific details. Therefore, these descriptions should be considered illustrative rather than restrictive.

[0134] Although the present application has been described in conjunction with specific embodiments thereof, many alternatives, modifications and variations of these embodiments will be apparent to those skilled in the art in light of the foregoing description.

[0135] The embodiments of the present application are intended to cover all such substitutions, modifications and variations that fall within the broad scope of the appended claims. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the embodiments of the present application should be included in the scope of protection of the present application.

[0136] Although the spirit and principle of the present disclosure have been described with reference to the first number of specific embodiments, it should be understood that the present disclosure is not limited to the disclosed specific embodiments, and the division of various aspects does not mean that the features in these aspects cannot be combined to benefit, and this division is only for the convenience of expression. The present disclosure is intended to cover various modifications and equivalent arrangements included in the spirit and scope of the attached claims. The scope of the attached claims conforms to the broadest interpretation, thereby including all such modifications and equivalent structures and functions.

Claims

1. A temperature detection circuit, characterized in that: include: a first field effect transistor and a second field effect transistor; The source of the first field effect transistor is connected to the source of the second field effect transistor; The gate of the first field effect transistor is connected to the gate of the second field effect transistor and then grounded; The drain of the first field effect transistor and the drain of the second field effect transistor are respectively connected to the input end of the temperature detection circuit; The first resistance of the first line between the drain of the first field effect transistor and the input terminal is a first number times the second resistance of the second line between the drain of the second field effect transistor and the input terminal, and the first number is greater than one.

2. The circuit according to claim 1, characterized in that The electrical characteristic parameters of the first field effect transistor and the second field effect transistor are the same.

3. The circuit according to claim 1, characterized in that The first field effect transistor and the second field effect transistor are both thin film transistor-based field effect transistors.

4. The circuit according to claim 1, characterized in that The line width of the first line is the same as the line width of the second line, and the line length of the first line is the first number times the line length of the second line.

5. The circuit according to claim 1, characterized in that The line length of the first line is the same as the line length of the second line, and the line width of the second line is the first number times the line width of the first line.

6. A display panel, characterized in that: include: A substrate and a temperature detection circuit according to any one of claims 1 to 5 arranged on the substrate.

7. The display panel according to claim 6, characterized in that: The temperature detection circuit is formed on the substrate.

8. The display panel according to claim 6, characterized in that: The temperature detection circuit is located in the display area of ​​the display panel.

9. A display device, characterized in that: include: A display panel as claimed in any one of claims 6 to 8.

10. A temperature detection method, characterized in that: Applied to the temperature detection circuit according to any one of claims 1 to 5, the method comprises: Input voltage through the input terminal; Acquire a first voltage value of the first circuit and a second voltage value of the second circuit, and obtain a voltage difference based on the first voltage value and the second voltage value; Based on the voltage difference, a temperature value of an environment in which the temperature detection circuit is located is obtained.

11. The method according to claim 10, characterized in that The obtaining, based on the voltage difference, of a temperature value of an environment in which the temperature detection circuit is located comprises calculating through the following formula: Wherein, d is the derivative symbol, V is the voltage difference, T is the temperature value, K is the Boltzmann constant, q is the charge of the electron, ln is the sign of the natural logarithm function, and n is the multiple between the first resistor and the second resistor.

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