Detection device and detection method

Abstract

The embodiment of the invention provides detection equipment and a detection method suitable for detecting a wafer. The detection equipment comprises a light source assembly, a light path system, a light beam deflection assembly and a sensor. The light beam deflection assembly is used for receiving and adjusting the transmission direction of the to-be-detected optical signal so as to determine the detection position of the wafer surface. The imaging assembly is used for adjusting the size of the field of view of the detection position. And the sensor is used for receiving the to-be-detected optical signal passing through the imaging assembly. Through cooperation of the light beam deflection assembly and the imaging assembly, the center position and the size of the detection view field can be accurately determined, high-resolution detection of any area of the wafer can be achieved, and the position of the wafer does not need to be moved in a mechanical mode. Besides, due to the fact that the effective focal length of the imaging assembly is adjustable, flexibility is provided for wafer detection of different resolutions, the detection view field range can be adjusted according to actual requirements, and the optical design is beneficial to reducing the manufacturing cost.

Description

Technical Field

[0001] The present disclosure relates to the field of wafer detection technology, and in particular, to a detection device and a detection method. Background Art

[0002] With the development of science and technology and the growth of market demand, the semiconductor industry has put forward higher requirements on the production capacity and efficiency of wafers. Since large-sized wafers can accommodate more transistors and circuit elements on the same chip, high chip integration can be achieved, thus meeting the market demand for more functions and higher performance.

[0003] With the advantages brought by large-size wafers, quality control and defect detection in the production process have become more complex and critical. Among them, optical inspection technology, with its non-contact measurement, high-resolution imaging and wide applicability, has shown great potential in wafer surface quality assessment, optical property analysis and microstructure detection, and has become the focus of industry attention.

[0004] However, for large-sized wafers, the defect detection task is more arduous. It must not only cover a larger detection range, but also provide higher detection accuracy, improve detection efficiency, and reduce the design and manufacturing costs of detection equipment. Summary of the invention

[0005] In view of this, the present disclosure provides a detection device and a detection method, which aim to solve the problems that large-size wafer detection equipment cannot take into account large-range detection, high detection accuracy, and efficient detection.

[0006] On the one hand, an embodiment of the present disclosure provides a detection device for detecting a wafer, including a light source assembly, an optical path system, a beam deflection assembly, and a sensor. The optical path system is used to guide the light source assembly to irradiate the wafer to generate a light signal to be detected. The beam deflection assembly is used to receive and adjust the transmission direction of the light signal to be detected to determine the detection position on the wafer surface. The imaging assembly is used to adjust the field of view of the detection position to obtain the light signal to be detected in the area to be detected on the wafer surface. The sensor is used to receive the light signal to be detected from the imaging assembly.

[0007] By designing a larger effective focal length of the imaging component, high-resolution detection of the wafer can be achieved without increasing the resolution of the sensor. Secondly, through the cooperation of the beam deflection component and the imaging component, the center position of the detection field of view and the size of the detection field of view can be accurately located, which helps to achieve high-resolution detection of different positions of the wafer without mechanically moving the position of the wafer. Thirdly, since the effective focal length of the imaging component is adjustable, it provides flexibility for the detection of different detection fields of view, so that the detection field of view range can be adjusted according to actual needs. In addition, the addition of the beam deflection component is conducive to the detection of any position on the wafer surface. Moreover, the structure is simple and the space utilization rate is high, which can help the detection equipment to obtain a relatively compact structure. This optical design not only helps to improve the detection field of view range, detection accuracy and detection efficiency of wafer detection, but also helps to improve space utilization and reduce the manufacturing cost of detection equipment.

[0008] On the other hand, an embodiment of the present disclosure provides a detection method for detecting wafers, including controlling an optical path system to generate a light signal to be detected for the wafer according to a control instruction, controlling a deflection angle of a beam deflection component to determine a detection position on the wafer surface to be detected, controlling an imaging component to adjust the field of view of the detection position, and processing the light signal to be detected to obtain images and performance parameters of different detection accuracies of the detection position on the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] It should be understood that the following drawings only illustrate certain embodiments of the present disclosure and should not be viewed as limiting the scope.

[0010] It should be understood that the same or similar reference numerals are used in the drawings to indicate the same or similar elements.

[0011] It should be understood that the drawings are merely schematic and that the sizes and proportions of elements in the drawings are not necessarily accurate.

[0012] Figure 1 A schematic diagram of the structure of a detection device provided in one embodiment of the present disclosure.

[0013] Figure 2 A schematic diagram of the structure of a detection device provided in one embodiment of the present disclosure.

[0014] Figure 3 for Figure 1 Schematic diagram of the structure of the beam deflection component in.

[0015] Figure 4a A schematic diagram of the structure of a detection device provided in an embodiment of the present disclosure in a first state.

[0016] Figure 4b A schematic diagram of the structure of a detection device provided in an embodiment of the present disclosure in a second state.

[0017] Figure 5 A flow chart of a detection method provided by an embodiment of the present invention.

[0018] Figures 6a to 6d A diagram of different scanning paths of an entire wafer provided by an embodiment of the present invention.

[0019] Figure 7 A schematic diagram of a partial scan of a wafer provided by an embodiment of the present invention.

[0020] Figure 8 A schematic diagram of wafer splicing provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0021] The following is an exemplary description of the embodiments of the present disclosure in conjunction with the accompanying drawings. It should be understood that the present disclosure can be implemented in a variety of ways and should not be construed as being limited to the embodiments described herein, which are only for a more thorough and clear understanding of the present disclosure.

[0022] In the surface quality inspection of large-size wafers, in order to improve the inspection accuracy, some manufacturers have adopted the solution of increasing the volume of the inspection equipment and improving the resolution of the camera pixels. In this way, not only the required space is large, but also the cost is high; other manufacturers achieve high-resolution inspection by moving the wafer and splicing the inspection results of multiple small apertures. In this way, not only a complex and precise moving mechanism is required to accurately position the wafer, but also a single inspection has a fixed field of view. In this way, not only the cost is high, but also the inspection field of view cannot be flexibly adjusted according to actual needs. In view of this, the present disclosure provides a detection device 100 for inspecting wafers. Compared with traditional large-size wafer inspection equipment, the inspection equipment provided by the present disclosure can quickly inspect any area of ​​a large-size wafer, and at the same time achieve a variety of inspection accuracies, including high-precision inspection, to provide a wider inspection field of view and more inspection accuracies, so as to better meet the market's increasing inspection needs for large-size wafers.

[0023] For ease of understanding, the detection device provided by the embodiment of the present disclosure is exemplified below in conjunction with specific embodiments and their accompanying drawings. It should be understood that the present disclosure can be implemented in a variety of ways and should not be construed as being limited to the embodiments described herein, which are only provided for a more thorough and clear understanding of the present disclosure.

[0024] refer to Figure 1, the detection device 100 may include a light source assembly 120 and an optical path system 130. The light source assembly 120 provides a light source for detecting the wafer 100. For example, the light source assembly can directly illuminate the wafer, or it can indirectly illuminate the wafer to generate a light signal to be detected for detecting the surface morphology of the wafer. The light source assembly is preferably a laser light source, for example, it can be a single wavelength light source or a multi-wavelength light source. The optical path system 130 is used to guide the light source assembly 120 to irradiate the wafer 100 to generate a light signal 10 to be detected. The light signal 10 to be detected can be an interference light signal (such as Sophie interferometry), or it can be a transmitted light signal, a reflected light signal, or any light signal to be detected that can be used to detect the surface morphology of the wafer. By analyzing the light signal to be detected, an image of the surface morphology of the wafer or other performance parameters can be obtained. The optical path system 130 includes some functional parts of the detection device, which will be introduced below and will not be repeated here.

[0025] Continue to refer Figure 1 The detection device 100 may further include a beam deflection assembly 140 for receiving and adjusting the transmission direction of the optical signal 10 to be detected to determine the detection position on the wafer surface. By changing the deflection angle and position of the beam deflection assembly 140, the center position of the required detection field of view (i.e., the detection area) can be determined without moving the position of the wafer and the optical path system, thereby realizing detection of any position of the wafer.

[0026] The detection device 100 may also include an imaging component 150 and a sensor 160. The imaging component 150 is used to adjust the size of the field of view surface of the detection position. The detection field of view can be understood as a certain area to be detected on the surface of the wafer. In particular, the size of the detection field of view can be adjusted by adjusting the effective focal length of the imaging component. The sensor 160 is used to receive the light signal 10 to be detected that passes through the imaging component and transmit it to the controller for processing to obtain an image and / or other performance parameters of the detection area on the wafer. The sensor can be an optical image sensor, such as a CCD camera, a CMOS camera, etc.

[0027] It is important to understand that the effective focal length of the imaging component will directly affect the size of the detection field of view, and thus the resolution of the detection equipment. Specifically, as the effective focal length increases, the field of view (i.e., the detection area) of the imaging system decreases, allowing for a more concentrated focus on a specific area on the wafer (i.e., higher resolution, higher magnification), thereby enabling the capture of details clearly within a smaller field of view. In other words, the larger the effective focal length, the smaller the detection field of view, and the size of the smallest detectable unit tends to be relatively larger, which helps improve the detection equipment's ability to accurately identify features or details, thereby achieving higher-precision detection.

[0028] It is worth noting that there is a direct proportional relationship between the size of the wafer's inspection field of view (inspection area) and the parameters of the inspection equipment, which is specifically expressed as (f1 / f2)*L, where f1 represents the effective focal length of the optical system 130, f2 represents the effective focal length of the imaging component 150, and L represents the diagonal size of the photosensitive surface of the sensor 160. This relationship shows that if it is necessary to inspect areas of different sizes on the wafer, it is only necessary to adjust the effective focal length f2 of the imaging component without adjusting the optical system, changing the position of the wafer, or replacing a larger size or higher resolution sensor.

[0029] In addition, the effective focal length of the imaging component 150 provided in the present disclosure can be changed continuously or discontinuously, and is not specifically limited here.

[0030] In some examples, high-resolution sensors or large-size sensors may be replaced with imaging components of different effective focal lengths to achieve different detection fields of view.

[0031] By designing a larger effective focal length of the imaging component, high-resolution detection of the wafer can be achieved without increasing the resolution of the sensor. Secondly, through the cooperation of the beam deflection component and the imaging component, the center position of the detection field of view and the size of the detection field of view can be accurately located, which helps to achieve high-resolution detection of different positions of the wafer without mechanically moving the position of the wafer. Thirdly, since the effective focal length of the imaging component is adjustable, it provides flexibility for the detection of different detection fields of view, so that the range of the detection field of view can be adjusted according to actual needs. In addition, the addition of the beam deflection component is conducive to the detection of any position on the wafer surface. Moreover, the structure is simple and the space utilization rate is high, which can help the detection equipment to obtain a relatively compact structure. This optical design not only helps to improve the detection range, detection accuracy and detection efficiency of wafer detection, but also helps to improve space utilization and reduce the manufacturing cost of detection equipment.

[0032] As an example, when the wafer surface area to be inspected is S1, the beam deflection assembly 140 is deflected from position A1 to position A1' (ie, from the deflection angle α1 to the deflection angle α2) (refer to Figure 4a ), when the wafer surface area to be inspected is S2, the beam deflection assembly 140 is deflected from position A2 to position A2' (ie, from the deflection angle α2 to the deflection angle α3) (reference Figure 4b ). By adjusting the deflection angle of the beam deflection component, the detection of different detection areas of the wafer can be achieved, which has many advantages such as convenient and fast detection.

[0033] refer to Figure 2 , Figure 4a and Figure 4b, the rear focus of the optical system 130 coincides with the front focus position of the imaging component 250 or 350 at F, which makes the relative positions of the optical system 130 and the imaging component form a Kepler telescope system. This structure enables the optical system 130 to first form an inverted, reduced real image of the area to be detected on the surface of the wafer, and then the imaging component further amplifies the real image into an upright, enlarged virtual image, so that the detection equipment can carefully obtain the image or other performance parameters of any smaller area on the surface of the wafer, such as morphological features. In this way, the aberration of the optical signal to be detected received by the sensor is in the optimal state, which is conducive to improving the quality of the generated image, thereby improving the accuracy and stability of the detection.

[0034] Continue to refer Figure 2 , Figure 4a and Figure 4b The center position of the beam deflection assembly 140 can be located at the axis L2 of the front focus of the imaging assembly 250, so that the spot area formed in the process of the optical signal 10 to be detected passing through the center position of the beam deflection assembly and entering the imaging assembly 250 is minimized. In this way, the size requirement for the beam deflection assembly is minimized, for example, it can be not less than 36mm*24mm.

[0035] Of course, as an example, the center position of the beam deflection assembly 140 may also deviate from the position F, for example, it may be located at other positions on the axis L2 that deviate from the position F (Y+ or Y- direction). In this way, the spot area formed by the optical signal 10 to be detected is slightly larger. With such a design, the size of the beam deflection assembly 140 needs to be increased to achieve the same effect.

[0036] Similarly, the center position of the beam deflection assembly 140 may also deviate from position F, for example, it may be located at other positions on the axis L1 that deviate from position F (in the X+ or X- direction). In this way, the spot area formed by the optical signal 10 to be detected is slightly larger. With such a design, the size of the beam deflection assembly 140 needs to be increased to achieve the same effect.

[0037] For ease of understanding, various directions are indicated by arrows in the disclosure, wherein arrow Y+ points to one side of a first direction, arrow Y- points to the other side of the first direction, arrow X+ points to one side of a second direction, and arrow X- points to the other side of the second direction.

[0038] In order to further reduce the cost and improve the wafer inspection efficiency, the beam deflection assembly 140 may include a first scanning galvanometer 141 and a second scanning galvanometer 142 that are perpendicular to each other. Figure 3The first scanning galvanometer 141 may include a first support frame 1410 and a first reflector 1412. The first support frame 1410 is used to fix the first reflector 1412 to ensure the stability of the operation of the first reflector 1412. The first reflector 1412 can move along the first direction and rotate around the first direction driven by the first support frame 1410. The second scanning galvanometer 142 may include a second support frame 1421 and a second reflector 1422. The second support frame 1421 is used to fix the second reflector 1422 to ensure the stability of the operation of the second reflector 1422. The second reflector 1422 can move along the second direction and rotate around the second direction driven by the second support frame 1421. The first support frame 1410 and the second support frame 1421 are arranged vertically. The first support frame 1410 and the second support frame 1421 are driven by the controller to drive the rotation angles of the first reflector 1412 and the second reflector 1422, thereby adjusting the transmission direction of the optical signal to be detected to adjust the size of the detection area on the wafer.

[0039] Since the scanning galvanometer is small in size, low in cost, and has an extremely fast deflection speed, for example, up to several hundred hertz, and extremely high positioning accuracy, the inspection efficiency and accuracy in the wafer inspection process are greatly improved. In addition, this implementation method has many advantages such as strong operability and easy control.

[0040] It should be noted that the beam deflection component 140 can also be a two-dimensional scanning galvanometer, or a fully solid-state optical beam two-dimensional scanner, or any component that can achieve beam deflection, which is not specifically limited here.

[0041] It is worth noting that when the beam deflection assembly 140 includes a first scanning galvanometer 141 and a second scanning galvanometer 142 that are perpendicular to each other, preferably, the center positions of the first scanning galvanometer and the second scanning galvanometer coincide with the rear focal position of the optical path system, that is, the center position of the focus of the central axis of the first reflector and the central axis of the second reflector coincides with the rear focal position of the optical path system, and the center position of the focus of the central axis of the first reflector and the central axis of the second reflector coincides with the front focal position of the imaging assembly. This design is conducive to reducing the size of the first scanning galvanometer and the second scanning galvanometer.

[0042] return Figure 2 , the imaging assembly 250 in the detection device 200 may include a first lens group 251 and a second lens group 252. The first lens group moves along a first direction to adjust the field of view of the detection position, and the second lens group moves in a direction away from the first direction to compensate for the aberration generated after the light signal to be detected passes through the first lens group. By changing the relative position relationship between the first lens group and the second lens group, the effective focal length of the imaging assembly can be continuously adjusted, so that the detection accuracy (i.e., resolution) and the detection field of view can be adjusted to meet the needs of different detection accuracy and detection areas.

[0043] It should be noted that the first lens group and the second lens group will move away from or towards each other when different resolution detection requirements are met to achieve a specific magnification. For example, when the magnification is 1x, the first lens group and the second lens group are in a state of moving away from each other; when the magnification is 5x, the first lens group and the second lens group are in a state of moving towards each other.

[0044] As an example, the optical power of the first lens group is negative, for example, it can be a biconcave lens, and the optical power of the second lens group is positive, for example, it can be a biconvex lens.

[0045] Continue to refer Figure 2 , the optical signal 10 to be detected passes through the second lens group 251 and the first lens group 252 successively to adjust the size of the field of view of the detection position. Of course, there are many positional relationships between the first lens group and the second lens group, which are not specifically limited here. There are many ways to achieve the relative movement of the corresponding first lens group and the second lens group, which are not specifically limited here.

[0046] refer to Figure 4a and Figure 4b The imaging assembly 350 in the detection device 300 may also include a third lens group 353 for compressing the height of the optical signal 10 to be detected. For example, the optical power of the third lens group 353 is positive, and it may be a biconvex lens. In this way, after the optical signal to be detected passes through the beam deflection assembly 140, it passes through the third lens group 353, the second lens group 352 and the first lens group 351 in sequence.

[0047] Continue to refer Figure 4a and Figure 4b The imaging component 350 may also include a fourth lens group 354, which is used to collimate the optical signal 10 to be detected, so that the optical signal 10 to be detected is incident on the sensor 160 in parallel after passing through the beam deflection component. For example, the optical focal length of the fourth lens group 354 is positive, for example, it can be a double convex lens. In this way, the optical signal 10 to be detected passes through the third lens group 353, the second lens group 352, the first lens group 351 and the fourth lens group 354 in sequence, and is finally received by the sensor 160. In this way, the imaging component 350 makes various adjustments to the optical signal to be detected, such as amplification, compensation, collimation, etc., so that the sensor receives the optical signals to be detected in different detection areas of the wafer, different detection accuracies and different detection fields of view, so as to prepare for subsequent processing and calculation by the controller.

[0048] It should be noted that the first lens group and / or the second lens group and / or the third lens group and / or the fourth lens group may also be a combination of multiple lenses, and the relationship of the optical power is only given as an example. There are many ways to control the movement of the first lens group and the second lens group, which are not specifically limited here.

[0049] The detection device may also include a controller, which is used to control the optical path system to generate a light signal 10 to be detected for the wafer according to a control instruction, and adjust the deflection angle of the beam deflection assembly 140 to determine the detection position on the wafer, and adjust the field of view of the detection position so that the sensor 160 receives the light signal 10 to be detected in the detection area. The controller is also used to process the light signal to be detected to obtain images and performance parameters of different detection accuracies of the detection position on the wafer.

[0050] For ease of understanding, the following Figure 4a and Figure 4b The structure of the detection device is briefly described by taking the optical path system for generating interference light signals as an example. The principle of generating interference light signals is obtained through the Sophie interferometry technology.

[0051] The detection device 300 includes a light source assembly 120 , an optical path system 130 , a beam deflection assembly 140 , an imaging assembly 350 and a sensor 160 .

[0052] The optical path system 130 includes a standard mirror assembly 131, a collimation assembly 132, a quarter wave plate assembly 133, and a polarization beam splitter assembly 134, and is used to generate, collimate, and collect interference light signals for transmission to the beam deflection assembly 140. Specifically, the light source assembly 120 irradiates the wafer after passing through the polarization beam splitter assembly 134, the quarter wave plate assembly 133, the collimation assembly 132, and the standard mirror assembly 131, and the obtained reflected light interferes with the reflected light irradiated to the standard mirror assembly 131 to generate an interference light signal.

[0053] The beam deflection assembly 140 may include a first scanning galvanometer 141 and a second scanning galvanometer 142 that are perpendicular to each other. In particular, the center positions of the first scanning galvanometer and the second scanning galvanometer coincide with the rear focal position of the optical path system, and the center position of the focus of the central axis of the first reflector and the central axis of the second reflector coincides with the front focal position of the imaging assembly. Through the mutual cooperation of the first scanning galvanometer 141 and the second scanning galvanometer 142, different detection positions on the wafer surface are obtained while changing the transmission direction of the optical signal to be detected.

[0054] The imaging component 350 includes a first lens group 351, a second lens group 352, a third lens group 353 and a fourth lens group 354, which are used to amplify, compensate, collimate and perform other adjustments on the interference light signal (i.e., the light measurement signal to be detected), so that the sensor 160 receives the light signals to be detected in different detection areas, different detection accuracies and different detection fields of view of the wafer 100, in preparation for subsequent processing and calculation by the controller.

[0055] Figure 5 A detection method suitable for wafer detection provided by an embodiment of the present invention is shown.

[0056] Step S10, controlling the optical path system to generate an optical signal to be detected for the wafer according to the control instruction.

[0057] Specifically, the control instructions may include, but are not limited to, the coordinates of the area to be detected on the wafer surface, the scanning rate of the beam deflection component, the scanning angle, the scanning mode, the effective focal length of the imaging component and other parameters.

[0058] Step S10, controlling the deflection angle of the beam deflection assembly to determine the detection position on the wafer.

[0059] Specifically, according to the control instructions, the first scanning galvanometer is controlled to move from the first position to the second position, and the second scanning galvanometer is controlled to move from the third position to the fourth position. The center position of the first position and the third position is located at the on-axis position of the front focus of the imaging component and at the on-axis position of the rear focus of the optical path system to determine the detection position on the wafer, and the light signal to be detected passes through the first scanning galvanometer and the second scanning galvanometer in turn and then enters the imaging component.

[0060] Exemplarily, the beam deflection assembly 140 may include a first scanning galvanometer 141 and a second scanning galvanometer 142 that are perpendicular to each other. Figure 4a and Figure 3 ), control the first scanning galvanometer 141 to move from the first position to the second position, control the second scanning galvanometer 142 to move from the third position to the fourth position, the center position of the first position and the second position is located at the axis position of the front focus of the imaging component, and is located at the axis position of the rear focus of the optical path system, so that the optical signal to be detected passes through the first scanning galvanometer and the second scanning galvanometer successively and then enters the imaging component. As another example, when the wafer surface area to be detected is S2 (reference Figure 4b and Figure 3 ), control the first scanning galvanometer to move from the fifth position to the sixth position, and control the second scanning galvanometer to move from the third position to the fourth position. By adjusting the deflection angle of the beam deflection assembly, the detection of different detection areas of the wafer can be achieved, which has the advantages of convenience and speed.

[0061] Step S12, controlling the imaging component to detect the field of view of the position so that the sensor receives the light signal to be detected in the detection area.

[0062] Specifically, the first lens group is controlled to move in a first direction to adjust the field of view of the detection position, and the second lens group is controlled to move in a direction away from the first direction to compensate for the aberration generated after the light signal to be detected passes through the first lens group.

[0063] As an example, the imaging assembly includes a first lens group, a second lens group, a third lens group, and a fourth lens group. The first lens group is controlled to move in a first direction to adjust the field of view of the detection position, and the second lens group moves in a direction away from the first direction to compensate for the aberration generated after the light signal to be detected passes through the first lens group. In this way, after the light signal to be detected passes through the beam deflection assembly, it passes through the third lens group, the second lens group, the first lens group, and the fourth lens group in sequence.

[0064] There are many ways to control the movement of the first lens group and the second lens group, which are not specifically limited here.

[0065] In step S20, the controller is further configured to process the optical signal to obtain images and performance parameters of different detection accuracies at the detection positions on the wafer.

[0066] The controller processes the light signals to be detected received by the sensor through a certain algorithm to obtain an image of the detection area. In addition, the controller can also stitch the images of multiple detection areas into the entire wafer through a stitching algorithm.

[0067] As an example, for a wafer of 300mm*300mm size, different scanning modes are required according to the detection requirements. By inputting control instructions of different scanning modes, the first scanning galvanometer and the second scanning galvanometer scan according to specific scanning parameters and scanning modes. Among them, the scanning parameters may include scanning speed, scanning range, scanning frequency, etc., and the scanning mode may include scanning direction, scanning path, etc. The scanning path can select the Lissajous curve (reference Figure 6a ), spiral curve (reference Figure 6b ), hexagon (reference Figure 6c ), quadrilateral (reference Figure 6d ), etc. Of course, the scanning path can also be edited as needed.

[0068] For example, for a wafer of 300 mm*300 mm size, the overall image of the wafer can also be obtained by multiple local scans. Moreover, for high-resolution scanning, the number of scans is calculated according to the resolution. Figure 7 , the area of ​​each scan is 35mm*47mm, and at least 300*300 / (35*47)≈55 scans are required to obtain the overall optical signal of the wafer at high resolution. If 20% coverage is required (i.e. 20% of the edge is shared), at least 300*300 / (35*47*80%)≈70 scans are required to obtain the overall image of the wafer at high resolution. Reference Figure 8 , the wafer is divided into 20 different inspection areas. After scanning different areas separately, the image of the entire wafer is obtained through the stitching algorithm.

[0069] It is understood that in the present disclosure, directional descriptions such as "upper" and "lower" are relative rather than absolute. When the detection device provided by the present disclosure is placed in the posture and position shown in the accompanying drawings, these directional words may be applicable.

[0070] It should be understood that although the terms "first" or "second", etc. may be used in the present disclosure to describe various elements (such as a first direction and a second direction), these elements are not defined by these terms, and these terms are only used to distinguish one element from another.

[0071] The basic principles of the present disclosure are described above in conjunction with specific embodiments. However, it should be noted that the advantages, strengths, effects, etc. mentioned in the present disclosure are only examples and not limitations, and it cannot be considered that these advantages, strengths, effects, etc. are required by each embodiment of the present disclosure. In addition, the specific details disclosed above are only for the purpose of illustration and ease of understanding, and are not limitations. The above details do not limit the present disclosure to the necessity of adopting the above specific details to be implemented.

[0072] The above description has been given for the purpose of illustration and description. In addition, this description is not intended to limit the embodiments of the present disclosure to the forms disclosed herein. Although multiple example aspects and embodiments have been discussed above, those skilled in the art will recognize certain variations, modifications, changes, additions and sub-combinations thereof.

[0073] The components and devices involved in this disclosure are only illustrative examples and are not intended to require or imply that they must be connected, arranged, and configured in the manner shown in the drawings. As those skilled in the art will recognize, these components and devices can be connected, arranged, and configured in any manner.

[0074] The above are only specific embodiments of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present disclosure, which should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the protection scope of the claims.

Claims

1. A testing device, suitable for testing wafers, characterized in that: include: Light source assembly; An optical path system, used for guiding the light source assembly to irradiate the wafer to generate a light signal to be detected; A beam deflection assembly is used to receive and adjust the transmission direction of the optical signal to be detected to determine the detection position of the wafer surface, an imaging assembly for adjusting the field of view of the detection position, and The sensor is used to receive the light signal to be detected that passes through the imaging component.

2. The detection device according to claim 1, characterized in that: The rear focus of the optical path system coincides with the front focus position of the imaging component.

3. The detection device according to claim 1, characterized in that: The center position of the beam deflection assembly is located at the on-axis position of the front focus of the imaging assembly.

4. The detection device according to claim 1, characterized in that: The center position of the beam deflection assembly is located at the on-axis position of the rear focus of the optical path system.

5. The detection device according to any one of claims 2 to 4, characterized in that: The imaging assembly includes a first lens group and a second lens group. The first lens group moves along a first direction to adjust the size of a detection area, and the second lens group moves along a direction away from the first direction to compensate for the aberration generated after the light signal to be detected passes through the first lens group.

6. The detection device according to any one of claims 2 to 4, characterized in that: The beam deflection assembly includes a first scanning galvanometer and a second scanning galvanometer that are perpendicular to each other.

7. The detection device according to claim 6, characterized in that: The center positions of the first scanning galvanometer and the second scanning galvanometer coincide with the rear focal position of the optical path system, and / or the center positions of the first scanning galvanometer and the second scanning galvanometer coincide with the front focal position of the imaging component.

8. The detection device according to claim 1, characterized in that: The optical signal to be detected is an interference optical signal.

9. The detection device according to claim 1, characterized in that: Also includes: A controller is used to control the optical path system to generate the light signal to be detected for the wafer according to a control instruction, and adjust the deflection angle of the beam deflection assembly to determine the detection position on the wafer surface to be detected, and adjust the field of view of the detection position so that the sensor receives the light signal to be detected. The controller is also used to process the light signal to be detected to obtain images and performance parameters of different detection accuracies of the detection position on the wafer.

10. A detection method, suitable for detecting a wafer, characterized in that: include: According to the control instruction, the optical path system is controlled to generate an optical signal to be detected for the wafer, controlling the deflection angle of the beam deflection assembly to determine the position of the wafer surface to be detected, controlling the imaging assembly to adjust the field of view of the detection position, The optical signal to be detected is processed to obtain images and performance parameters of different detection accuracies of the detection position on the wafer.

11. The detection method according to claim 10, characterized in that: The beam deflection assembly includes a first scanning galvanometer and a second scanning galvanometer that are perpendicular to each other, and controlling the deflection angle of the beam deflection assembly to determine the detection position on the wafer includes: According to the control instruction, the first scanning galvanometer is controlled to move from the first position to the second position, and the second scanning galvanometer is controlled to move from the third position to the fourth position. The center position of the first position and the third position is located at the axial position of the front focus of the imaging component and at the axial position of the rear focus of the optical path system, so as to determine the detection position on the wafer, and make the light signal to be detected pass through the first scanning galvanometer and the second scanning galvanometer successively and then enter the imaging component.

12. The detection method according to claim 10, characterized in that: The imaging assembly includes a first lens group and a second lens group, and the controlling the imaging assembly to adjust the field of view of the detection position includes: controlling the first lens group to move along a first direction to adjust the field of view of the detection position, The second lens group is controlled to move in a direction away from the first direction to compensate for the aberration generated after the light signal to be detected passes through the first lens group.

13. A storage medium, characterized in that: The storage medium stores a program, and when the program is executed by a processor, the processor executes the detection method according to any one of claims 10 to 12.

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