Wafer suction cup and machine table

Abstract

The invention discloses a wafer suction cup and a machine table, and belongs to the technical field of semiconductors, the wafer suction cup is provided with a first semiconductor temperature control device array and a second semiconductor temperature control device array in a middle area and an edge area respectively, adopted semiconductor temperature control devices carry out temperature control based on the Peltier effect, the temperature control response is fast, a steady state is achieved in about 5s, and the stability is high. The temperature control precision is high and can reach + / -10mK; the first semiconductor temperature control device array and the second semiconductor temperature control device array are respectively controlled by a first controller and a second controller, and a zoning temperature control method is adopted, so that optimized temperature control can be carried out according to different regional characteristics, and the temperature control uniformity is ensured; the first semiconductor temperature control device array can perform field-by-field optimization temperature control compensation for different exposure areas in the middle area, and the wafer overlay precision can be improved. According to the invention, the temperature control response speed and the temperature control precision can be improved, and the independent temperature control of the local area can be realized, so that the temperature control uniformity is ensured, and the wafer overlay precision is improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a wafer suction cup and a machine. Background Art

[0002] At present, for the machines used in the photolithography process, the wafer chuck is equipped with heaters in the core area and the edge area, and the heaters are heated by resistance wires. The wafer chuck is controlled as a whole by using cooling water + heater + temperature sensor to control the temperature of the wafer. The temperature control response of the resistance wire heating method is slow; the accuracy is low, which will cause the temperature overshoot to be too large. In addition, affected by the surrounding water vapor, there is heat loss at the edge of the wafer chuck. Due to the overall temperature control method, the wafer chuck cannot perform separate temperature control on the local area, which will cause the temperature control effect of the edge of the wafer chuck to be worse than that of the center area of ​​the wafer chuck, and the temperature control temperature of the wafer chuck surface in the radial direction is uneven. In addition, when exposing the wafer surface, the temperature of each exposure area is not exactly the same, and the temperature of each exposure area will affect the overlay accuracy of the subsequent wafer. Since the current wafer chuck cannot perform separate temperature control on the local area, it will also affect the overlay accuracy of the wafer. Summary of the invention

[0003] The purpose of this application is to provide a wafer suction cup and machine, which can improve the temperature control response speed and temperature control accuracy, and can realize separate temperature control of local areas, thereby ensuring the uniformity of temperature control and improving the wafer overlay accuracy.

[0004] To achieve the above-mentioned purpose, the present application provides a wafer suction cup, comprising: a wafer support layer and a temperature control layer;

[0005] The temperature control layer is located below the wafer support layer; the temperature control layer includes a carrier, at least one first controller, at least one second controller and at least one temperature sensor;

[0006] The temperature sensor is used to detect the temperature of the surface of the wafer suction cup; the surface of the wafer suction cup is the surface of the wafer supporting layer used to support the wafer;

[0007] The surface of the carrier plate close to the wafer support layer includes a middle area and an edge area; the middle area is provided with a first semiconductor temperature control device array; the edge area is provided with a second semiconductor temperature control device array;

[0008] The first controller is used to control the first semiconductor temperature control device array to compensate the temperature of each exposure area according to the temperature of each exposure area in the middle area of ​​the surface of the wafer suction cup and the target temperature of each exposure area; each exposure area corresponds to a preset graphic area of ​​the wafer; the second controller is used to control the second semiconductor temperature control device array to regulate the temperature of the edge area of ​​the surface of the wafer suction cup.

[0009] Optionally, the temperature control layer includes a first controller; each first semiconductor temperature control device in the first semiconductor temperature control device array is connected in parallel; and the first controller is electrically connected to the first semiconductor temperature control device array.

[0010] Optionally, the temperature control layer includes a second controller; the second semiconductor temperature control devices in the second semiconductor temperature control device array are connected in series; and the second controller is electrically connected to the second semiconductor temperature control device array.

[0011] Optionally, the temperature control layer further includes: a water cooling plate; the water cooling plate is located below the carrier plate.

[0012] Optionally, the water cooling plate includes a middle area and an edge area; the middle area is provided with a first pipe; and the edge area is provided with a second pipe.

[0013] Optionally, the temperature sensor is located between the carrier plate and the water cooling plate.

[0014] Optionally, the temperature control layer includes a plurality of the temperature sensors; the temperature sensors constitute a plurality of annular temperature sensor arrays; and each of the annular temperature sensor arrays is arranged in sequence along the radial direction.

[0015] Optionally, the wafer support layer includes a silicon carbide layer.

[0016] Optionally, the first controller is used to control the first semiconductor temperature control device array to compensate the temperature of each exposure area according to the temperature of each exposure area on the surface of the wafer suction cup and the relationship curve between the target temperature of each exposure area and the target wafer overlay accuracy.

[0017] To achieve the above objectives, the present application also provides a machine, including: a wafer suction cup as described in any of the above items.

[0018] A wafer suction cup provided in the present application comprises: a wafer support layer and a temperature control layer; the temperature control layer is located below the wafer support layer; the temperature control layer comprises a carrier plate, at least one first controller, at least one second controller and at least one temperature sensor; the temperature sensor is used to detect the temperature of the surface of the wafer suction cup; the surface of the wafer suction cup is the surface of the wafer support layer for supporting the wafer; the surface of the carrier plate close to the wafer support layer comprises a middle area and an edge area; the middle area is provided with a first semiconductor temperature control device array; the edge area is provided with a second semiconductor temperature control device array; the first controller is used to control the first semiconductor temperature control device array to compensate for the temperature of each exposure area according to the temperature of each exposure area in the middle area of ​​the surface of the wafer suction cup and the target temperature of each exposure area; each exposure area corresponds to a preset graphic area of ​​the wafer; the second controller is used to control the second semiconductor temperature control device array to regulate the temperature of the edge area of ​​the surface of the wafer suction cup.

[0019] Obviously, the present application sets a first semiconductor temperature control device array and a second semiconductor temperature control device array in the middle area and the edge area respectively. The semiconductor temperature control device used is based on the Peltier effect for temperature control, with fast temperature control response, reaching a steady state in about 5 seconds, and high temperature control accuracy, which can reach + / -10mK; the first semiconductor temperature control device array and the second semiconductor temperature control device array are controlled by a first controller and a second controller respectively, and the temperature control can be optimized for different regional characteristics by using a partitioned temperature control method to ensure temperature uniformity; the first semiconductor temperature control device array can optimize temperature control compensation for different exposure areas in the middle area field by field, which can improve wafer overlay accuracy. The present application also provides a machine with the above-mentioned beneficial effects. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying any creative work.

[0021] Figure 1 This is a structural diagram of a traditional wafer chuck;

[0022] Figure 2 This is the temperature control response data of the traditional wafer chuck;

[0023] Figure 3 A structural diagram of a wafer suction cup provided in an embodiment of the present application;

[0024] Figure 4Provide wafer chuck temperature control response data for the embodiment of the present application.

[0025] The following are the descriptions of the reference numerals:

[0026] 01-core area heater; 02-core area temperature sensor; 03-edge area heater; 04-edge area temperature sensor;

[0027] 1-wafer support layer; 11-fixing screw hole; 12-hole for wafer transfer; 13-mounting hole; 2-carrier board; 21-first semiconductor temperature control device array; 31-temperature sensor; 4-water cooling plate. DETAILED DESCRIPTION

[0028] In order to make the purpose, technical scheme and advantages of the embodiments of the present application clearer, the technical scheme in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0029] like Figure 1 As shown, a conventional wafer chuck for photolithography process is provided with a heater 01 in the core area, and a temperature sensor 02 is provided around the heater 01; a heater 03 is provided in the edge area, and a temperature sensor 04 is provided around the heater 03; the heater 01 and the heater 03 are heated by a resistance wire, and the temperature of the wafer chuck is controlled by this method, thereby controlling the temperature of the wafer, and the temperature control range of the wafer chuck is 22℃~22.1℃. However, as Figure 2As shown, the temperature control accuracy of the resistance wire is low, and the temperature overshoot will be too large. The overshoot can reach 100mK in the figure; the heating speed of the resistance wire is slow, which will lead to slow temperature control response. It takes 25s for the temperature to reach the steady state in the figure, and it takes 5s for the temperature to reach the overshoot temperature. At the same time, due to the slow temperature control response and low accuracy of the resistance wire, if the temperature is controlled by different zones, there may be hysteresis and mutual interference, so the current wafer suction cup usually adopts the overall temperature control method. In addition, since there is an area on the outer ring of the wafer suction cup to recover the residual water droplets and bubbles on the edge, the existence of this area will cause heat loss at the edge of the wafer suction cup. Since the current wafer suction cup cannot perform separate temperature control on the local area, the temperature control effect of the edge of the wafer suction cup is worse than that of the center area of ​​the wafer suction cup (wherein, the control accuracy of the wafer suction cup in the core area: + / -20mK; the control accuracy of the wafer suction cup in the edge area: + / -60mK), and the temperature control temperature of the wafer suction cup surface along the radial direction is uneven. In addition, when the wafer is patterned, the surface of the wafer will be exposed, and the temperature of each exposure area will affect the overlay accuracy of the subsequent wafer. Moreover, due to factors such as the temperature of the wafer chuck and the adjacent exposure area, the temperature of each exposure area is not exactly the same. Since the current wafer chuck cannot perform separate temperature control on local areas, it will also affect the overlay accuracy of the wafer. Therefore, the present application provides a wafer chuck and a machine for use in a photolithography process, which can improve the temperature control response speed and temperature control accuracy, and can achieve separate temperature control of local areas, thereby ensuring the uniformity of temperature control and improving the wafer overlay accuracy.

[0030] The embodiment of the present application provides a wafer suction cup, which may include: a wafer support layer and a temperature control layer;

[0031] The temperature control layer is located below the wafer support layer; the temperature control layer includes a carrier, at least one first controller, at least one second controller and at least one temperature sensor;

[0032] The temperature sensor is used to detect the temperature of the surface of the wafer chuck; the surface of the wafer chuck is the surface of the wafer support layer used to support the wafer;

[0033] The surface of the carrier plate close to the wafer support layer includes a middle area and an edge area; the middle area is provided with a first semiconductor temperature control device array; the edge area is provided with a second semiconductor temperature control device array;

[0034] The first controller is used to control the first semiconductor temperature control device array to compensate the temperature of each exposure area according to the temperature of each exposure area in the middle area of ​​the wafer suction cup surface and the target temperature of each exposure area; each exposure area corresponds to a preset graphic area of ​​the wafer; the second controller is used to control the second semiconductor temperature control device array to regulate the temperature of the edge area of ​​the wafer suction cup surface.

[0035] This embodiment does not limit the specific type of the carrier, as long as it can carry the first semiconductor temperature control device array and the second semiconductor temperature control device array. This embodiment does not limit the specific number of the first semiconductor temperature control device array, as long as it can cover the middle area. It should be noted that the greater the density of the first semiconductor temperature control device, the better the local temperature control effect.

[0036] This embodiment does not limit the specific connection method between the first controller and the first semiconductor temperature control device array. For example, the temperature control layer may include a first controller; each first semiconductor temperature control device in the first semiconductor temperature control device array is connected in parallel; the first controller is electrically connected to the first semiconductor temperature control device array; or the temperature control layer may include multiple first controllers; each first semiconductor temperature control device in the first semiconductor temperature control device array is electrically connected to the first controller one by one. It should be noted that the former is to control each first semiconductor temperature control device in parallel through a first controller; the latter is that each first semiconductor temperature control device is controlled by the first controller connected thereto.

[0037] This embodiment does not limit the specific connection method between the second controller and the second semiconductor temperature control device array. For example, the temperature control layer may include a second controller; each second semiconductor temperature control device in the second semiconductor temperature control device array is connected in series; the second controller is electrically connected to the second semiconductor temperature control device array; the temperature control layer may include a second controller; each second semiconductor temperature control device in the second semiconductor temperature control device array is connected in parallel; the second controller is electrically connected to the second semiconductor temperature control device array; the temperature control layer may include multiple second controllers; each second semiconductor temperature control device in the second semiconductor temperature control device array is electrically connected to the second controller one by one. It should be noted that the purpose of setting the second semiconductor temperature control device in the edge area is mainly to optimize the temperature of the edge area affected by water vapor recovery. Therefore, the edge area can adopt an overall temperature control method or a local individual temperature control method.

[0038] Furthermore, in order to improve the flexibility of temperature control, the temperature control layer of this embodiment may also include: a water cooling plate; the water cooling plate is located below the carrier plate. Further, the water cooling plate of this embodiment may include a middle area and an edge area; the middle area is provided with a first pipe; the edge area is provided with a second pipe. It should be noted that by providing different water cooling pipes for different partitions, the temperature control can be optimized according to the characteristics of different areas.

[0039] The present embodiment does not limit the specific type of the temperature sensor, as long as it can detect the temperature on the surface of the wafer suction cup. The present embodiment does not limit the specific location of the temperature sensor. For example, the temperature sensor can be located between the carrier and the water cooling plate; the temperature sensor can also be located below the water cooling plate. The present embodiment does not limit the specific installation method of the temperature sensor. For example, the temperature sensor can be set on the surface of the carrier away from the wafer support layer; when the temperature sensor is a thin film platinum thermistor, the thin film platinum thermistor can be placed between the carrier and the water cooling plate. Among them, the thin film platinum thermistor uses the thermoelectric effect of platinum to measure temperature. The present embodiment does not limit the specific type of the carrier film, as long as it can carry the temperature sensor.

[0040] Furthermore, in order to improve the accuracy of temperature detection, the temperature control layer in this embodiment may include a plurality of temperature sensors; the temperature sensors constitute a plurality of annular temperature sensor arrays; and each annular temperature sensor array is arranged in sequence along the radial direction.

[0041] Furthermore, in order to enhance the thermal conductivity of the surface of the wafer chuck, the wafer support layer in this embodiment may include a silicon carbide layer. It should be noted that silicon carbide (SiC) is a material with excellent thermal conductivity.

[0042] Furthermore, in order to achieve the best effect of field-by-field temperature control for each exposure area, the first controller in this embodiment can be used to control the first semiconductor temperature control device array to compensate the temperature of each exposure area according to the temperature of each exposure area on the surface of the wafer suction cup and the relationship curve between the target temperature of each exposure area and the target wafer overlay accuracy. It should be noted that the target temperature of each exposure area corresponding to the target overlay accuracy can be determined based on the relationship curve between the target temperature of each exposure area and the target wafer overlay accuracy. The first controller controls the first semiconductor temperature control device array to compensate the temperature of each exposure area so that the temperature of each exposure area reaches the target temperature, thereby achieving the target wafer overlay accuracy.

[0043] In addition, it should be noted that the relationship curve between the target temperature of each exposure area and the target wafer overlay accuracy is obtained in advance through multiple tests. The test steps specifically include:

[0044] The first step is to place a temperature measuring wafer on the surface of the wafer chuck to measure the temperature of the surface of the wafer chuck before exposure; according to the temperature, the first semiconductor temperature control device array and the second semiconductor temperature control device array are adjusted to keep the temperature of the entire wafer chuck surface at a temperature value between 21.98°C and 22.02°C;

[0045] The second step is to place the sample wafer on the surface of the wafer chuck, expose the sample wafer twice, measure the temperature of the surface of the wafer chuck after the second exposure by a temperature sensor, and record the temperature of each exposure area;

[0046] The third step is to calculate the wafer overlay accuracy according to the degree of deviation of the wafer pattern after the second exposure from the wafer pattern after the first exposure;

[0047] By repeating the above steps, an accurate relationship curve between the temperature of each exposure field and the overlay accuracy can be obtained.

[0048] Based on the above embodiments, the present application respectively arranges a first semiconductor temperature control device array and a second semiconductor temperature control device array in the middle area and the edge area. The semiconductor temperature control device used performs temperature control based on the Peltier effect, has a fast temperature control response, reaches a steady state in about 5 seconds, and has a high temperature control accuracy, which can reach + / -10mK; the first semiconductor temperature control device array and the second semiconductor temperature control device array are respectively controlled by a first controller and a second controller, and a zoned temperature control method is adopted, which can optimize the temperature control according to the characteristics of different regions to ensure the uniformity of temperature control; the first semiconductor temperature control device array can optimize the temperature control compensation field by field for different exposure areas in the middle area, which can improve the wafer overlay accuracy.

[0049] The embodiment of the present application provides another wafer suction cup, which may include: a wafer support layer and a temperature control layer;

[0050] The temperature control layer is located below the wafer support layer; the temperature control layer includes a carrier, at least one first controller, at least one second controller and at least one temperature sensor;

[0051] The temperature sensor is used to detect the temperature of the surface of the wafer chuck; the surface of the wafer chuck is the surface of the wafer support layer used to support the wafer;

[0052] The surface of the carrier plate close to the wafer support layer includes a middle area and an edge area; the middle area is provided with a first semiconductor temperature control device array; the edge area is provided with a second semiconductor temperature control device array;

[0053] The first controller is used to control the first semiconductor temperature control device array to compensate for the temperature of each exposure area on the surface of the wafer suction cup according to the temperature of each exposure area and the relationship curve between the target temperature of each exposure area and the target wafer overlay accuracy; each exposure area corresponds to a preset graphic area of ​​the wafer; the second controller is used to control the second semiconductor temperature control device array to regulate the temperature of the edge area of ​​the surface of the wafer suction cup.

[0054] Based on the above embodiments, the present application respectively arranges a first semiconductor temperature control device array and a second semiconductor temperature control device array in the middle area and the edge area, and the semiconductor temperature control device used performs temperature control based on the Peltier effect, and has a fast temperature control response, reaching a steady state in about 5 seconds, and a high temperature control accuracy, which can reach + / -10mK; the first semiconductor temperature control device array and the second semiconductor temperature control device array are respectively controlled by a first controller and a second controller, and a zoned temperature control method is adopted, so that the temperature control can be optimized according to the characteristics of different areas to ensure the uniformity of temperature control; the first semiconductor temperature control device array optimizes the temperature control compensation for different exposure areas in the middle area field by field according to the relationship curve between the target temperature of each exposure area and the target wafer overlay accuracy, and can achieve the best effect of field by field temperature control for each exposure area.

[0055] An embodiment of the present application further provides a machine, which may include: a wafer suction cup as described in any one of the above items.

[0056] Based on the above embodiments, the machine provided in the present application can also improve the temperature control response speed and temperature control accuracy by adopting the above-mentioned wafer suction cup, and can realize separate temperature control of local areas, thereby ensuring the temperature uniformity of temperature control and improving the wafer overlay accuracy.

[0057] The temperature control process of the above-mentioned wafer chuck is explained below with reference to specific examples.

[0058] Please refer to Figure 3 , Figure 3 A structural diagram of a wafer suction cup provided in an embodiment of the present application, the wafer suction cup specifically comprises: a wafer support layer 1 and a temperature control layer;

[0059] The surface of the wafer support layer 1 is provided with a fixing screw hole 11 for installing the suction cup, a hole 12 for handing over the wafer, and a mounting hole 13 reserved for a tool for disassembling and installing the wafer suction cup; the wafer support layer 1 includes a silicon carbide layer;

[0060] The temperature control layer is located below the wafer support layer 1; the temperature control layer includes a carrier plate 2, a first controller, a second controller, 39 (1, 6, 12 and 20 in the radial direction) temperature sensors 31 and a water cooling plate 4; the water cooling plate 4 is located below the carrier plate 2; the temperature sensor 31 is located between the carrier plate 2 and the water cooling plate 4; the temperature sensor 31 is used to detect the temperature of the surface of the wafer suction cup; the surface of the wafer suction cup is the surface of the wafer support layer 1 for supporting the wafer;

[0061] The surface of the carrier plate 2 close to the wafer support layer 1 includes a middle area and an edge area; the middle area is provided with a first semiconductor temperature control device array 21; the first semiconductor temperature control device array 21 includes 96 first semiconductor temperature control devices, and the size of a single first semiconductor temperature control device is 26mmx33mm; the edge area is provided with a second semiconductor temperature control device array;

[0062] The first semiconductor temperature control devices in the first semiconductor temperature control device array 21 are connected in parallel; the first controller is electrically connected to the first semiconductor temperature control device array 21; the first controller is used to control the first semiconductor temperature control device array 21 to compensate for the temperature of each exposure area according to the temperature of each exposure area in the middle area of ​​the wafer suction cup surface and the target temperature of each exposure area; each exposure area corresponds to a preset graphic area of ​​the wafer; the second semiconductor temperature control devices in the second semiconductor temperature control device array are connected in series; the second controller is electrically connected to the second semiconductor temperature control device array; the second controller is used to control the second semiconductor temperature control device array to regulate the temperature of the edge area of ​​the wafer suction cup surface.

[0063] Please refer to Figure 4 , Figure 4 The temperature control response data of the wafer chuck is provided for the embodiment of the present application. As can be seen from the figure, the present embodiment adopts a semiconductor temperature control device for temperature control, and the overshoot temperature is only 20mK, which is significantly lower than the overshoot temperature of the traditional wafer chuck. It only takes 1s for the temperature to reach the overshoot temperature, and only about 5s for the temperature to reach a steady state. The response speed is significantly faster than the response speed of the traditional wafer chuck.

[0064] Specific examples are used herein to illustrate the principles and implementation methods of the present application, and the embodiments are in a progressive relationship, each embodiment focuses on the differences from other embodiments, and the same and similar parts between the embodiments can be referred to each other. The description of the above embodiments is only used to help understand the method and core ideas of the present application. For ordinary technicians in this technical field, without departing from the principles of the present application, several improvements and modifications can be made to the present application, and these improvements and modifications also fall within the scope of protection of the claims of the present application.

[0065] It should also be noted that, in this specification, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "comprise", "include" or any other variants thereof are intended to cover non-exclusive inclusion, so that the process, method, article or equipment including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or equipment. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the presence of other identical elements in the process, method, article or equipment including the elements.

Claims

1. A wafer chuck, characterized in that: include: Wafer support layer and temperature control layer; The temperature control layer is located below the wafer support layer; the temperature control layer includes a carrier, at least one first controller, at least one second controller and at least one temperature sensor; The temperature sensor is used to detect the temperature of the surface of the wafer suction cup; the surface of the wafer suction cup is the surface of the wafer supporting layer used to support the wafer; The surface of the carrier plate close to the wafer support layer includes a middle area and an edge area; the middle area is provided with a first semiconductor temperature control device array; the edge area is provided with a second semiconductor temperature control device array; The first controller is used to control the first semiconductor temperature control device array to compensate the temperature of each exposure area according to the temperature of each exposure area in the middle area of ​​the surface of the wafer chuck and the target temperature of each exposure area; each exposure area corresponds to a preset patterned area of ​​the wafer; The second controller is used to control the second semiconductor temperature control device array to regulate the temperature of the edge area of ​​the surface of the wafer suction cup.

2. The wafer chuck according to claim 1, characterized in that: The temperature control layer includes the first controller; the first semiconductor temperature control devices in the first semiconductor temperature control device array are connected in parallel; and the first controller is electrically connected to the first semiconductor temperature control device array.

3. The wafer chuck according to claim 1, characterized in that: The temperature control layer includes a second controller; each second semiconductor temperature control device in the second semiconductor temperature control device array is connected in series; and the second controller is electrically connected to the second semiconductor temperature control device array.

4. The wafer chuck according to claim 1, characterized in that: The temperature control layer further includes: a water cooling plate; the water cooling plate is located below the carrier plate.

5. The wafer chuck according to claim 4, characterized in that: The water cooling plate includes a middle area and an edge area; the middle area is provided with a first pipeline; the edge area is provided with a second pipeline.

6. The wafer chuck according to claim 4, characterized in that: The temperature sensor is located between the carrier plate and the water cooling plate.

7. The wafer chuck according to claim 1, characterized in that: The temperature control layer includes a plurality of the temperature sensors; the temperature sensors form a plurality of annular temperature sensor arrays; and each of the annular temperature sensor arrays is arranged in sequence along the radial direction.

8. The wafer chuck according to claim 1, characterized in that: The wafer support layer includes a silicon carbide layer.

9. The wafer chuck according to any one of claims 1 to 8, characterized in that: The first controller is used to control the first semiconductor temperature control device array to compensate the temperature of each exposure area according to the temperature of each exposure area on the surface of the wafer suction cup and the relationship curve between the target temperature of each exposure area and the target wafer overlay accuracy.

10. A machine, characterized in that: include: A wafer chuck as claimed in any one of claims 1 to 9.

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