One-time password circuit based on ferroelectric memory

Abstract

The invention discloses a one-time password circuit based on a ferroelectric memory. The one-time password circuit based on the ferroelectric memory is used for performing one-time encryption on to-be-encrypted data and comprises a processor circuit, an encryption module and the ferroelectric memory. The processor circuit is used for outputting plaintext data, key data and a read-write address; the encryption module is used for performing encryption logic operation on the plaintext data based on the key data so as to output ciphertext data; the ferroelectric memory is used for writing in and storing the ciphertext data to obtain storage data and reading out the storage data to obtain the data to be encrypted; wherein the ferroelectric memory is configured to read the stored data and then automatically reset the stored data. In this way, the one-time password circuit based on the ferroelectric memory can make full use of the unique destructive read-write characteristic of the one-time password circuit to provide possibility for one-time encryption.

Description

Technical Field

[0001] The present application relates to the field of data encryption, and in particular to a one-time password circuit based on a ferroelectric memory. Background Art

[0002] With the development of information technology, data security has become a key issue. In traditional encryption technology, confidential data will be converted into ciphertext data through encryption operation, and this ciphertext data can be further stored in a memory device. Based on this, a hardware device that obtains the encryption key and algorithm can decrypt the ciphertext data.

[0003] However, existing data encryption technology faces some challenges, including weak security, increased risk of data leakage, complex operation process and high hardware cost. These problems are mainly attributed to the technical bottlenecks of traditional encryption algorithms and logic circuits, as well as the high cost and difficulty of updating hardware encryption technology.

[0004] Specifically, traditional encryption methods usually require multiple read and write operations on storage devices during the encryption and decryption process. This not only reduces the efficiency of data transmission and processing, making the encryption and decryption process cumbersome and time-consuming, but more importantly, frequent read and write operations increase the risk of data being intercepted or leaked during transmission. Especially in some occasions with extremely high security requirements, such as financial transactions, government information confidentiality, etc., the consequences of data leakage may be catastrophic.

[0005] As a new type of non-volatile memory, ferroelectric memory has the advantages of fast read and write speed, low power consumption, and long data retention time. Although some studies have tried to use the non-volatile characteristics of ferroelectric memory for data encryption, the application of ferroelectric memory in data encryption is still rare.

[0006] Therefore, how to make full use of the unique characteristics of ferroelectric memory and develop safer, more convenient and cost-effective data encryption technology has become an urgent problem to be solved. Summary of the invention

[0007] An advantage of the present application is that it provides a one-time password circuit based on a ferroelectric memory, wherein the one-time password circuit based on the ferroelectric memory can make full use of its unique destructive read-write characteristics to provide the possibility of one-time encryption.

[0008] Another advantage of the present application is that it provides a one-time password circuit based on a ferroelectric memory, wherein the one-time password circuit based on the ferroelectric memory has a protection setting for data, which can reduce the impact of data damage or reading errors on data to a certain extent.

[0009] According to one aspect of the present application, a one-time password circuit based on a ferroelectric memory is provided, which is used to perform one-time encryption on data to be encrypted, and includes: a processor circuit, which is used to output plaintext data, key data, and read-write addresses; an encryption module, which is communicatively connected to the processor circuit, and is used to perform encryption logic operations on the plaintext data based on the key data to output ciphertext data; and a ferroelectric memory, which is communicatively connected to the encryption module, and is used to write and store the ciphertext data to obtain storage data, and read the storage data to obtain the data to be encrypted; wherein the ferroelectric memory is configured to automatically clear the storage data after reading the storage data.

[0010] In one embodiment of the one-time password circuit based on ferroelectric memory according to the present application, the read-write address includes a write address and a read address; the ferroelectric memory includes a write module, a read module and a storage unit; wherein the write module is used to write ciphertext data into the storage unit based on the write address; the read module is used to read the stored data based on the read address, and automatically clear the stored data in the storage unit during the read process.

[0011] In one embodiment of the one-time password circuit based on ferroelectric memory described in the present application, the storage unit includes multiple storage sub-units, and the writing module is further used to write the ciphertext data corresponding to the multiple plaintext data into the multiple storage sub-units respectively.

[0012] In one embodiment of the one-time password circuit based on ferroelectric memory described in the present application, the processor circuit is used to generate multiple plaintext data based on the same data to be encrypted received multiple times, and compare the multiple plaintext data. When it is detected that multiple plaintext data are the same, different read and write addresses are respectively assigned to the multiple plaintext data.

[0013] In one embodiment of the one-time password circuit based on ferroelectric memory described in the present application, the processor circuit generates a plurality of the plaintext data based on the received data to be encrypted and its copy, and allocates different read and write addresses to the plurality of the plaintext data respectively.

[0014] In one embodiment of the one-time password circuit based on ferroelectric memory according to the present application, the one-time password circuit based on ferroelectric memory includes a copy module, which is communicatively connected to the processor circuit; the copy module is used to copy the data to be encrypted to obtain at least one copy of the data to be encrypted; the processor circuit is used to generate a plurality of the plaintext data based on the received data to be encrypted and its copy, and assign different read and write addresses to the plurality of the plaintext data respectively.

[0015] In one embodiment of the one-time password circuit based on ferroelectric memory according to the present application, the one-time password circuit based on ferroelectric memory also includes a block division module; the block division module can be communicatively connected to the processor circuit; the block division module is used to divide the data to be encrypted into at least two parts of sub-data to be encrypted, and assign importance expression values ​​to the at least two parts of sub-data to be encrypted respectively, wherein the importance expression value is used to express the importance of the sub-data to be encrypted.

[0016] In one embodiment of the one-time password circuit based on ferroelectric memory according to the present application, the one-time password circuit based on ferroelectric memory also includes a copy module, which is used to determine the number of copies based on the importance expression value, and copy at least one sub-data to be encrypted based on the number of copies to obtain at least one copy of the sub-data to be encrypted; the processor circuit is used to generate a plurality of the plaintext data based on all the sub-data to be encrypted and the copies of at least one sub-data to be encrypted, and assign different read and write addresses to the plurality of the plaintext data respectively.

[0017] In one embodiment of the one-time password circuit based on ferroelectric memory described in the present application, the importance expression value is a natural number to represent the level of the sub-data to be encrypted, and the lower the value, the higher the importance of the sub-data to be encrypted; alternatively, the importance expression value can be implemented as a weighted value greater than or equal to 0 and less than or equal to 1, and the higher the value, the higher the importance of the sub-data to be encrypted.

[0018] In one embodiment of the one-time password circuit based on ferroelectric memory according to the present application, the one-time password circuit based on ferroelectric memory also includes an error correction code allocation module; the error correction code allocation module can be communicatively connected to the processor circuit, and is used to allocate multiple error correction codes to multiple plaintext data or multiple ciphertext data corresponding to multiple plaintext data.

[0019] Further objectives and advantages of the present application will be fully reflected through understanding of the following description and drawings.

[0020] These and other objects, features and advantages of the present application are fully reflected in the following detailed description, drawings and claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] By describing the embodiments of the present application in more detail in conjunction with the accompanying drawings, the above and other purposes, features and advantages of the present application will become more apparent. The accompanying drawings are used to provide a further understanding of the embodiments of the present application and constitute a part of the specification. Together with the embodiments of the present application, they are used to explain the present application and do not constitute a limitation of the present application. In the accompanying drawings, the same reference numerals generally represent the same components or steps.

[0022] Figure 1 The figure shows a schematic structural block diagram of a one-time password circuit based on a ferroelectric memory according to an embodiment of the present application.

[0023] Figure 2 The figure shows a schematic flow chart of one-time encryption of encrypted data by a one-time password circuit based on a ferroelectric memory according to an embodiment of the present application.

[0024] Figure 3 The figure shows a schematic diagram of a hysteresis loop characteristic curve of a ferroelectric memory of a one-time password circuit based on a ferroelectric memory according to an embodiment of the present application.

[0025] Figure 4 The diagram shows a schematic diagram of charge changes at different voltages during destructive reading of a ferroelectric memory of a one-time password circuit based on a ferroelectric memory according to an embodiment of the present application.

[0026] Figure 5 The figure shows a schematic structural block diagram of an implementation of a one-time password circuit based on a ferroelectric memory according to an embodiment of the present application.

[0027] Figure 6 The figure illustrates a structural block diagram of another implementation of a one-time password circuit based on a ferroelectric memory according to an embodiment of the present application.

[0028] Figure 7 The figure shows a structural block diagram of another implementation of a one-time password circuit based on a ferroelectric memory according to an embodiment of the present application.

[0029] Figure 8 The figure shows a wiring diagram of a ferroelectric capacitor of a one-time password circuit based on a ferroelectric memory according to an embodiment of the present application. DETAILED DESCRIPTION

[0030] Below, the exemplary embodiments according to the present application will be described in detail with reference to the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application, and it should be understood that the present application is not limited to the exemplary embodiments described here.

[0031] It is understood that the term "one" should be understood as "at least one" or "one or more", that is, in one embodiment, the number of an element can be one, while in another embodiment, the number of the element can be multiple, and the term "one" cannot be understood as a limitation on the number. "Multiple" means greater than or equal to two.

[0032] Although ordinals such as "first," "second," and the like will be used to describe various components, those components are not limited herein. The term is used only to distinguish one component from another. For example, a first component may be referred to as a second component, and likewise, a second component may be referred to as a first component without departing from the teachings of the present application. The term "and / or" as used herein includes any and all combinations of one or more associated listed items.

[0033] The terms used herein are only used for the purpose of describing various embodiments and are not intended to be limiting. As used herein, the singular form is intended to include the plural form, unless the context clearly indicates an exception. It will also be understood that the terms "including" and / or "having" when used in this specification specify the presence of the described features, numbers, operations, components, elements, or combinations thereof, without excluding the presence or addition of one or more other features, numbers, operations, components, elements, or combinations thereof.

[0034] like Figures 1 to 8 As shown, a one-time password circuit 100 based on a ferroelectric memory according to an embodiment of the present application is illustrated. The one-time password circuit 100 based on a ferroelectric memory is used to perform one-time encryption on encrypted data. Considering that the ferroelectric memory 30 has the characteristic of destructive reading and writing, that is, the data is cleared once it is read out, the present application proposes to develop a safer, more convenient and more cost-effective data encryption scheme by utilizing the destructive reading and writing characteristic of the ferroelectric memory 30.

[0035] Specifically, the one-time password circuit 100 based on ferroelectric memory includes a processor circuit 10, an encryption module 20 and a ferroelectric memory 30. The processor circuit 10 is used to output plaintext data, key data and read / write addresses, wherein the plaintext data is obtained based on the data to be encrypted; the encryption module 20 is communicatively connected to the processor circuit 10, and is used to perform encryption logic operations on the plaintext data based on the key data to output ciphertext data; the ferroelectric memory 30 is communicatively connected to the encryption module 20, and is used to write and store the ciphertext data to obtain storage data, and read the storage data to obtain the data to be encrypted; wherein the ferroelectric memory 30 is configured to automatically clear the storage data after reading the storage data.

[0036] The read / write address includes a write address and a read address. The ferroelectric memory 30 includes a write module 31, a read module 33 and a storage unit 32; wherein the write module 31 is used to write the ciphertext data into the storage unit 32 based on the write address; the read module 33 is used to read the stored data based on the read address, and automatically clear the stored data in the storage unit 32 during the read process. The storage unit 32 includes a ferroelectric capacitor 3211. Figure 8As shown, one end of the ferroelectric capacitor 3211 can be connected to a plate line (PL), and the other end can be connected to a bit line (BL).

[0037] Figure 3 and Figure 4 The basic principle of destructive reading of the ferroelectric memory 30 is shown. The ferroelectric memory 30 uses a ferroelectric capacitor as a storage capacitor, wherein the ferroelectric capacitor has a spontaneous polarization phenomenon: the displacement inherent in the crystal structure of the material will not disappear in the absence of an electric field; and when a proper electric field is applied, the direction of the polarization can be reversed or redirected.

[0038] Figure 3 The hysteresis loop characteristic curve of the ferroelectric memory 30 is shown. When a negative voltage pulse is applied to the ferroelectric memory 30, the ferroelectric polarization is downward, and the voltage across the ferroelectric capacitor returns to zero voltage, the residual charge -Qr corresponds to the binary number "1"; when a positive voltage pulse is applied, the ferroelectric polarization is upward, and the residual charge Qr corresponds to the binary number "0" when the ferroelectric capacitor has zero voltage. Figure 4 The destructive reading process of the ferroelectric memory 30 is demonstrated. When a positive pulse is applied to one end of the connecting plate line of a ferroelectric capacitor which is initially in a residual polarization state, the polarization state will be reversed when reading the binary number "1", but not when reading the binary number "0". The polarization state of the original ferroelectric capacitor is destroyed, that is, all the data in the storage unit 32 of the ferroelectric memory 30 is cleared.

[0039] Furthermore, considering that the performance of the ferroelectric memory 30 is greatly affected by environmental factors (eg, temperature, radiation), and that accidents may occur during the read process, resulting in data corruption or reading errors, the present application provides data protection settings.

[0040] Specifically, the present application proposes: by storing data multiple times and storing them in different storage units 32 ; even if the data reading of some storage units 32 is lost or damaged, it can still be obtained through the data in other storage units 32 .

[0041] More specifically, data can be stored multiple times and in different storage units 32 in a variety of ways; for example, the same data to be encrypted is input into the one-time password circuit 100 based on ferroelectric memory in sequence multiple times, and different read and write addresses are assigned to the multiple data to be encrypted by the processor circuit 10; for another example, multiple copies of the data to be encrypted are input into the one-time password circuit 100 based on ferroelectric memory, and different read and write addresses are assigned to the multiple copies of the data to be encrypted by the processor circuit 10; wherein the multiple copies of the data to be encrypted can be input into the one-time password circuit 100 based on ferroelectric memory simultaneously or not simultaneously; for another example, the data to be encrypted is input into the one-time password circuit 100 based on ferroelectric memory, the data to be encrypted is copied to form at least one copy of the data to be encrypted, and then different read and write addresses are assigned to the multiple copies of the data to be encrypted by the processor circuit 10.

[0042] Accordingly, in one embodiment of the present application, after the one-time password circuit 100 based on the ferroelectric memory receives the same data to be encrypted multiple times in sequence, the processor circuit 10 can generate multiple plaintext data based on the same data to be encrypted received multiple times, and compare the multiple plaintext data. When it is detected that multiple plaintext data are the same, different read and write addresses are respectively assigned to the multiple plaintext data.

[0043] In another embodiment of the present application, after the one-time password circuit 100 based on the ferroelectric memory receives the data to be encrypted and its copy, the processor circuit 10 can generate a plurality of the plaintext data based on the received data to be encrypted and its copy, and assign different read and write addresses to the plurality of the plaintext data respectively.

[0044] In another embodiment of the present application, the one-time password circuit 100 based on ferroelectric memory includes a copy module 40, such as Figure 6 As shown. The copy module 40 can be communicatively connected to the processor circuit 10. The copy module 40 is used to copy the data to be encrypted to obtain at least one copy of the data to be encrypted. The processor circuit 10 is used to generate a plurality of the plaintext data based on the received data to be encrypted and its copy, and to assign different read and write addresses to the plurality of the plaintext data. The copy module 40 can be implemented as a multiplexer, an application specific integrated circuit (ASIC), a field programmable gate array (FPGA), etc.

[0045] Correspondingly, the encryption module 20 is also used to perform encryption logic operations on the plurality of plaintext data based on the key data to output a plurality of ciphertext data; Figure 5 As shown, the storage unit 32 includes a plurality of sub-storage units 321. The writing module 31 is also used to write the plurality of ciphertext data into the plurality of sub-storage units 321 based on a plurality of writing addresses. The reading module 33 is also used to read the stored data based on a plurality of reading addresses.

[0046] Furthermore, at least part of the encrypted data may be selectively stored multiple times according to the importance of the data, and each part of the encrypted data may be stored a corresponding number of times according to the importance of the data. For example, data with greater importance may be stored more times; data with less importance may be stored less times, or may be stored only once.

[0047] Accordingly, if Figure 7 As shown, the one-time password circuit 100 based on ferroelectric memory further includes a block module 50. The block module 50 can be communicatively connected to the processor circuit 10. The block module 50 is used to divide the data to be encrypted into at least two parts of sub-data to be encrypted, and respectively assign importance expression values ​​to at least two parts of sub-data to be encrypted, wherein the importance expression value is used to express the importance of the sub-data to be encrypted, for example, the importance expression value can be implemented as a natural number 1, 2, 3..., representing the level of the sub-data to be encrypted, the lower the value, the higher the importance of the sub-data to be encrypted; for another example, the importance expression value can be implemented as a weighted value, which is greater than or equal to 0 and less than or equal to 1, and the higher the value, the higher the importance of the sub-data to be encrypted.

[0048] The copy module 40 is used to determine the number of copies based on the importance expression value. When the importance expression values ​​of all sub-data to be encrypted do not reach the preset standard, none of the sub-data to be encrypted will be copied; for example, when the importance expression values ​​implemented as natural numbers are all greater than 4, none of the sub-data to be encrypted will be copied; for another example, when the importance expression values ​​implemented as weighted values ​​do not exceed 0.5, none of the sub-data to be encrypted will be copied. When at least one of the importance expression values ​​of all sub-data to be encrypted reaches the preset standard, at least one sub-data to be encrypted is copied based on the number of copies to obtain a copy of at least one sub-data to be encrypted.

[0049] The processor circuit 10 is used to multiple the plaintext data based on all the sub-data to be encrypted and at least one copy of the sub-data to be encrypted, and to allocate different read and write addresses to the multiple plaintext data respectively. The value interval and the corresponding number of copies can be preset, and the number of copies is determined according to the preset interval where the importance expression value is located. The higher the importance of the sub-data to be encrypted represented by the importance expression value, the more times it is copied.

[0050] Furthermore, the error correction code can be combined with the detection and correction of data errors based on storing the data multiple times and storing them in different storage units 32; thus, even if part of the data is lost or damaged due to destructive reading, the original data can still be restored through the error correction code.

[0051] Correspondingly, the one-time password circuit 100 based on ferroelectric memory further includes an error correction code allocation module. The error correction code allocation module can be communicatively connected to the processor circuit 10, and is used to allocate multiple error correction codes to multiple plaintext data or multiple ciphertext data respectively. The form of the error correction code is not limited to the present application, for example, Reed-Solomon, Hamming Code, etc. When an external device reads the data of the one-time password circuit 100 based on ferroelectric memory, the received data can be checked and corrected according to the error correction code.

[0052] According to the working mode of the one-time password circuit 100 based on the ferroelectric memory, the present application proposes a one-time password data confidentiality method based on the ferroelectric memory 30, which comprises the following steps: Figure 2 As shown, S110, outputting plaintext data, key data and read / write addresses; S120, performing encryption logic operation on the plaintext data based on the key data to output ciphertext data; S130, writing and storing the ciphertext data to obtain storage data, and reading the storage data; and, S140, automatically clearing the storage data. Automatically clearing the stored storage data means setting the storage data to zero.

[0053] In one embodiment of the present application, step S130 includes the step of: writing the ciphertext data corresponding to the plurality of plaintext data into a plurality of storage sub-units respectively.

[0054] In one embodiment of the present application, the one-time password data confidentiality method based on the ferroelectric memory 30 also includes step S100A, generating multiple plaintext data based on the same data to be encrypted received multiple times, and comparing the multiple plaintext data, and when it is detected that multiple plaintext data are the same, different read and write addresses are respectively assigned to the multiple plaintext data.

[0055] In one embodiment of the present application, the one-time password data confidentiality method based on the ferroelectric memory 30 also includes step S100B, generating multiple plaintext data based on the received data to be encrypted and its copy, and assigning different read and write addresses to the multiple plaintext data respectively.

[0056] In one embodiment of the present application, the one-time password data confidentiality method based on the ferroelectric memory 30 also includes step S100C1, copying the data to be encrypted to obtain at least one copy of the data to be encrypted; and step S100C2, generating a plurality of the plaintext data based on the received data to be encrypted and its copies, and assigning different read and write addresses to the plurality of the plaintext data respectively.

[0057] In one embodiment of the present application, the one-time password data confidentiality method based on the ferroelectric memory 30 also includes step S100D1, dividing the data to be encrypted into at least two parts of sub-data to be encrypted; S100D2, assigning importance expression values ​​to the at least two parts of sub-data to be encrypted respectively, wherein the importance expression values ​​are used to express the importance of the sub-data to be encrypted.

[0058] In one embodiment of the present application, the one-time password data confidentiality method based on the ferroelectric memory 30 also includes step S100D3, determining the number of replications based on the importance expression value, and replicating at least one sub-data to be encrypted based on the number of replications to obtain at least one copy of the sub-data to be encrypted; S100D4, multiple plaintext data based on all the sub-data to be encrypted and at least one copy of the sub-data to be encrypted, and assigning different read and write addresses to the multiple plaintext data respectively.

[0059] In one embodiment of the present application, the one-time password data confidentiality method based on the ferroelectric memory 30 further includes step S100E: allocating multiple error correction codes to the multiple plaintext data or the multiple ciphertext data corresponding to the multiple plaintext data.

[0060] In summary, the one-time password circuit 100 based on ferroelectric memory is explained. The present application optimizes the security issues caused by frequent reading and writing of storage devices in the existing encryption method, and through the destructive read-write characteristics of the ferroelectric memory 30, it is ensured that once the data is encrypted and read out, it cannot be read or modified again, thereby physically preventing data leakage. Compared with the traditional encryption scheme, it can further improve the security and stability of the system.

[0061] The present application and its implementation methods are described above, and such description is not restrictive. The drawings show only one implementation method of the present application, and the actual structure is not limited thereto. In short, if ordinary technicians in the field are inspired by it and design structural methods and embodiments similar to the technical solution without creative design without departing from the inventive purpose of the present application, they should all fall within the protection scope of the present application.

Claims

1. A one-time password circuit based on ferroelectric memory, used for one-time encryption of encrypted data, characterized in that: include: A processor circuit for outputting plaintext data, key data, and read and write addresses; an encryption module, communicatively connected to the processor circuit, for performing an encryption logic operation on the plaintext data based on the key data to output ciphertext data; and a ferroelectric memory which is communicatively connected to the encryption module and is used for writing and storing the ciphertext data to obtain storage data, and reading the storage data to obtain the data to be encrypted; wherein the ferroelectric memory is configured to automatically clear the storage data after reading the storage data.

2. The one-time password circuit based on ferroelectric memory according to claim 1, characterized in that: The read-write address includes a write address and a read address; the ferroelectric memory includes a write module, a read module and a storage unit; wherein the write module is used to write the ciphertext data into the storage unit based on the write address; the read module is used to read the stored data based on the read address, and automatically clear the stored data in the storage unit during the read process.

3. The one-time password circuit based on ferroelectric memory according to claim 2, characterized in that: The storage unit includes a plurality of storage sub-units, and the writing module is further used to write the ciphertext data corresponding to the plurality of plaintext data into the plurality of storage sub-units respectively.

4. The one-time password circuit based on ferroelectric memory according to claim 3, characterized in that: The processor circuit is used to generate multiple plaintext data based on the same to-be-encrypted data received multiple times, and compare the multiple plaintext data. When it is detected that the multiple plaintext data are the same, different read and write addresses are respectively assigned to the multiple plaintext data.

5. The one-time password circuit based on ferroelectric memory according to claim 3, characterized in that: The processor circuit generates a plurality of the plaintext data based on the received data to be encrypted and its copy, and allocates different read and write addresses to the plurality of the plaintext data respectively.

6. The one-time password circuit based on ferroelectric memory according to claim 3, characterized in that: The one-time password circuit based on ferroelectric memory includes a copy module, and the copy module is communicatively connected to the processor circuit; The copy module is used to copy the data to be encrypted to obtain at least one copy of the data to be encrypted; The processor circuit is used for generating a plurality of the plaintext data based on the received data to be encrypted and its copy, and respectively allocating different read and write addresses to the plurality of the plaintext data.

7. The one-time password circuit based on ferroelectric memory according to claim 2, characterized in that: The one-time password circuit based on ferroelectric memory also includes a block division module; the block division module can be communicatively connected to the processor circuit; the block division module is used to divide the data to be encrypted into at least two parts of sub-data to be encrypted, and assign importance expression values ​​to the at least two parts of sub-data to be encrypted respectively, wherein the importance expression value is used to express the importance of the sub-data to be encrypted.

8. The one-time password circuit based on ferroelectric memory according to claim 7, characterized in that: The one-time password circuit based on ferroelectric memory further includes a copy module, the copy module is used to determine the number of copies based on the importance expression value, and copy at least one sub-data to be encrypted based on the number of copies to obtain a copy of at least one sub-data to be encrypted; The processor circuit is used to generate a plurality of the plaintext data based on all the sub-data to be encrypted and at least one copy of the sub-data to be encrypted, and to assign different read and write addresses to the plurality of the plaintext data respectively.

9. The one-time password circuit based on ferroelectric memory according to claim 7, characterized in that: The importance expression value is a natural number to represent the level of the sub-data to be encrypted. The lower the value, the higher the importance of the sub-data to be encrypted. Alternatively, the importance expression value can be implemented as a weighted value greater than or equal to 0 and less than or equal to 1. The higher the value, the higher the importance of the sub-data to be encrypted.

10. The one-time password circuit based on ferroelectric memory according to claim 3 or 8, characterized in that: The one-time password circuit based on ferroelectric memory also includes an error correction code allocation module; the error correction code allocation module can be communicatively connected to the processor circuit, and is used to allocate multiple error correction codes to multiple plaintext data or multiple ciphertext data corresponding to multiple plaintext data.

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