Semiconductor device dispatching method, system and terminal
By analyzing the defect impact data of semiconductor devices and distributing them according to preset thresholds and critical values, the scrapping problem caused by the superposition of defects in wafer processing is solved, improving product yields and reducing pollution risks.
Patent Information
- Application Number
- CN202411931084.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-25
- Publication Date
- 2025-05-13
AI Technical Summary
The prior art cannot effectively solve the defect superposition problem caused by multiple processes during wafer processing, resulting in high wafer scrapping rate and increased corporate costs.
By obtaining defect data sets of semiconductor devices, analyzing defect impact data, and sending semiconductor devices to appropriate target machines or scrapping them according to preset defect thresholds and critical values to reduce defect overlay and pollution risks.
It effectively improves product yield, reduces machine pollution risk, saves production costs, and avoids the scrapping of semiconductor devices caused by defect superposition.
Smart Images
Figure CN119993861A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a method, system and terminal for dispatching semiconductor devices. Background Art
[0002] With the development of science and technology, semiconductor technology has become the cornerstone of modern society and is widely used in computers, communications, consumer electronics and other fields. The performance and reliability of semiconductor devices are related to the quality of electronic products and user experience, and the market has put forward higher and higher requirements on the performance and yield of semiconductor devices. As the basis of semiconductor devices, defect control in the production process of wafers is particularly important. Wafer processing and manufacturing is an extremely complex process involving multiple processes, and each process may affect the final yield of the wafer. These defects may be caused by various factors, such as wear, failure, process parameter deviation, and environmental pollution. To solve the above problems, companies have adopted a strict defect detection process to identify and classify wafer defects.
[0003] At present, during the wafer processing, the wafer disposal method is often judged according to the impact rate of wafer defects. When the impact rate of wafer defects reaches the set threshold, the wafer is scrapped. Due to the various processes in the wafer processing process, there is a probability of introducing defects in each process. At this time, the calculated impact rate of wafer defects is the superposition of the defect impact rates introduced by multiple processes. When the superimposed impact rate reaches the set threshold, the wafer is scrapped. This wafer processing method cannot solve the problem of wafer scrapping caused by the superposition of defects caused by multiple processes, which limits the improvement of wafer yield. In addition, among the defects of the wafer, some defect components are very easy to cause machine contamination. In order to avoid contamination of the machine, manpower is required to control such abnormal wafers. This manpower control method greatly increases the manpower cost of the enterprise.
[0004] Based on this, in order to solve the above problems, the present application provides a semiconductor device dispatching method, system and terminal, which are used to improve product yield and reduce the risk of machine contamination. Summary of the invention
[0005] In view of the shortcomings of the prior art described above, the purpose of the present application is to provide a semiconductor device dispatching method, system and terminal to solve the problems of low product yield and the like in the prior art, thereby improving product yield and reducing the risk of machine contamination.
[0006] In order to achieve the above-mentioned purpose and other related purposes, the present application provides a method for dispatching semiconductor devices, comprising the following steps:
[0007] Acquire defect datasets of semiconductor devices;
[0008] Analyzing the defects of the semiconductor device according to the defect data set to obtain defect impact data;
[0009] The defect impact data is compared with a preset defect threshold and a defect critical value, and the semiconductor device is dispatched to a first target tool or other process tools according to the comparison result.
[0010] Optionally, the step of acquiring a defect data set of a semiconductor device comprises the following steps:
[0011] Scanning and testing the semiconductor device to obtain defect information of the semiconductor device;
[0012] The defect information is collected to form the defect data set.
[0013] Optionally, before sending the semiconductor device to the first target machine or other process machine according to the comparison result, the following steps are also included:
[0014] Obtain machine process information;
[0015] According to the machine process information, obtaining the past production information of the process machine corresponding to the process that produces the defect;
[0016] According to the past production information, for the process that generates the defect, a process machine whose defect impact rate is less than a preset impact rate threshold is selected from the process machines as the first target machine.
[0017] Optionally, the defect threshold includes a first defect threshold, the defect critical value includes a first defect critical value, the defect impact data includes a first defect impact rate, and the sending the semiconductor device to a first target machine or other process machine according to the comparison result includes the following steps:
[0018] When the first defect impact rate is less than the first defect critical value, randomly dispatching the semiconductor device to the process tool;
[0019] When the first defect impact rate is greater than or equal to the first defect critical value and less than or equal to the first defect threshold value, dispatching the semiconductor device to the first target machine;
[0020] When the first defect impact rate is greater than the first defect threshold, scrapping the semiconductor device;
[0021] Wherein, the first defect threshold is greater than the first defect critical value.
[0022] Optionally, the defect impact data includes a second defect impact rate, and analyzing the defects of the semiconductor device to obtain the defect impact data includes the following steps:
[0023] classifying the defects according to their morphology;
[0024] Analyze the defects to obtain defect impact rates and defect kill yield rates of different types of defects;
[0025] According to the defect kill yield rate, selecting defects whose defect kill yield rate is greater than a preset kill yield rate threshold from the defects as high-risk defects;
[0026] According to the defect impact rates of different types of defects, a second defect impact rate of the high-risk defect is calculated.
[0027] Optionally, the defect threshold includes a second defect threshold, the defect critical value includes a second defect critical value, and the sending the semiconductor device to a first target machine or other process machine according to the comparison result includes the following steps:
[0028] When the second defect impact rate is less than the second defect critical value, randomly dispatching the semiconductor device to the process tool;
[0029] When the second defect impact rate is greater than or equal to the second defect critical value and less than or equal to the second defect threshold value, dispatching the semiconductor device to the first target machine;
[0030] When the second defect impact rate is greater than the second defect threshold, scrapping the semiconductor device;
[0031] Wherein, the second defect threshold is greater than the second defect critical value.
[0032] Optionally, the defect impact data includes a third defect impact rate, and analyzing the defects of the semiconductor device to obtain the defect impact data includes the following steps:
[0033] Obtaining a preset detection defect from the defects;
[0034] The defects of the semiconductor device are analyzed to obtain a third defect influence rate of the preset detection defect.
[0035] Optionally, the defect threshold includes a third defect threshold, the defect critical value includes a third defect critical value, and the sending the semiconductor device to a first target machine or other process machine according to the comparison result includes the following steps:
[0036] When the third defect impact rate is less than the third defect critical value, randomly dispatching the semiconductor device to the process tool;
[0037] When the third defect impact rate is greater than or equal to the third defect critical value and less than or equal to the third defect threshold value, dispatching the semiconductor device to the first target machine;
[0038] When the third defect impact rate is greater than the third defect threshold, scrapping the semiconductor device;
[0039] Wherein, the third defect threshold is greater than the third defect critical value.
[0040] Optionally, the defect data set includes defect component data, and before the semiconductor device is dispatched to a first target machine or other process machine according to the comparison result, the following steps are further included:
[0041] Determining, based on the defect component data, whether the defect poses a contamination risk to the process tool;
[0042] When there is a contamination risk, the semiconductor device is marked as risky.
[0043] Optionally, before sending the semiconductor device to the first target machine or other process machine according to the comparison result, the following steps are also included:
[0044] Obtain machine cycle information;
[0045] According to the machine cycle information, a process machine with a use cycle at the end of its use cycle is selected from the process machines as a second target machine; wherein the use cycle at least includes a component life cycle and a maintenance cycle.
[0046] Optionally, the step of dispatching the semiconductor device to a first target tool or other process tool according to the comparison result comprises the following steps:
[0047] When the semiconductor device has a risk mark, sending the semiconductor device to the second target machine;
[0048] When the semiconductor device does not have a risk mark, the semiconductor device is sent to the first target tool or other process tools.
[0049] The present application also provides a semiconductor device dispatching system, which uses any semiconductor device dispatching method in the aforementioned embodiments to dispatch semiconductor devices, including a data acquisition module, a yield analysis module, a data analysis module and a system dispatching module;
[0050] The data acquisition module is used to obtain a defect data set of the semiconductor device;
[0051] The data analysis module is used to obtain the defect data set from the data acquisition module, analyze the defects of the semiconductor device according to the defect data set using the yield analysis module to obtain defect impact data, and compare the defect impact data with a preset defect threshold and a defect critical value;
[0052] The system dispatching module is used to dispatch the semiconductor device to a first target tool or other process tools according to the comparison result.
[0053] Optionally, the semiconductor device dispatching system further includes a defect scanning module and an information statistics module;
[0054] The defect scanning module is used to scan and analyze the semiconductor device to obtain defect information of the semiconductor device, and the data acquisition module collects the defect information to form the defect data set;
[0055] The information statistics module is used to count the machine process information and machine cycle information of the process machine;
[0056] The data analysis module is further used to determine whether the defect has a contamination risk to the process tool according to the defect data set, and select the first target tool and the second target tool from the process tools according to the tool process information and the tool cycle information;
[0057] The dispatching module is further used to dispatch the semiconductor device to the second target machine.
[0058] The present application also provides a terminal, comprising a processor and a memory communicatively connected to the processor;
[0059] The memory is used to store computer programs;
[0060] The processor is used to execute the computer program stored in the memory, so that the terminal can implement any one of the semiconductor device dispatching methods in the aforementioned embodiments.
[0061] As described above, the semiconductor device dispatching method, system and terminal provided by the present application have at least the following beneficial effects:
[0062] In the semiconductor device dispatching method of the present application, by judging whether the defect of the semiconductor device has the risk of contaminating the process machine, and using the second target machine to perform the next process on the semiconductor device with the risk of contamination, it is possible to effectively prevent the defect from causing contamination to the process machine, and avoid the occurrence of major accidents such as superimposed contamination of the machine or product; according to the preset defect threshold and defect critical value, when the defect does not have the risk of contamination, and the corresponding defect impact data is between the defect critical value and the defect threshold, the semiconductor device is dispatched to the first target machine for the next process, which can effectively reduce or avoid the risk of semiconductor devices being scrapped due to the superposition of defects generated in subsequent processes, improve product yield, and save production costs. The semiconductor device dispatching system and terminal provided by the present application adopt the above-mentioned semiconductor device dispatching method to dispatch semiconductor devices, and therefore also have the above-mentioned beneficial effects. BRIEF DESCRIPTION OF THE DRAWINGS
[0063] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.
[0064] Figure 1 Shown is a flow chart of a semiconductor device dispatching method provided in the first embodiment of the present application.
[0065] Figures 2 to 4 Schematic diagrams of the structures of wafer surface defects, scratch defects and residue defects provided in Example 1 of the present application are respectively shown.
[0066] Figures 5 to 7 Schematic diagrams showing the principles of three different dispatching methods for semiconductor devices provided in the first embodiment of the present application.
[0067] Figure 8 Shown is a schematic diagram of the structure of a semiconductor device dispatching system provided in Example 2 of the present application. DETAILED DESCRIPTION
[0068] In order to make the technical purpose, technical solution and technical effect of the present application clearer, the technical solution in the present application will be clearly and completely described in conjunction with the embodiments below. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations.
[0069] Therefore, the following detailed description of the embodiments of the present application is not intended to limit the scope of the present application for protection, but merely represents the selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work are within the scope of protection of the present application. In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance.
[0070] In the description of the present application, it should be noted that the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "example", "specific example" or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the implementation or example are included in at least one implementation or example of the present application. In this specification, the schematic representation of the above terms does not necessarily refer to the same implementation or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more implementations or examples in a suitable manner.
[0071] Embodiment 1
[0072] This embodiment provides a semiconductor device dispatching method for dispatching semiconductor devices during the processing of semiconductor devices. Optionally, the semiconductor devices may be, for example, wafers or other suitable devices.
[0073] Reference Figure 1 The semiconductor device dispatching method provided in this embodiment includes steps S1 to S3, specifically including:
[0074] Step S1: Acquire a defect data set of a semiconductor device;
[0075] Step S2: Analyze the defects of the semiconductor device according to the defect data set to obtain defect impact data;
[0076] Step S3: Compare the defect impact data with a preset defect threshold and a defect critical value, and dispatch the semiconductor device to a first target tool or other process tools according to the comparison result.
[0077] The semiconductor device dispatching method of this embodiment will be described in detail below with reference to the accompanying drawings. It should be noted that the above sequence does not strictly represent the process sequence of the semiconductor device dispatching method protected by this application, and those skilled in the art may change it according to the actual processing steps.
[0078] First, step S1 is performed to obtain a defect data set of a semiconductor device.
[0079] In an optional embodiment, the defect data set includes at least defect location data, defect size data, defect image data, defect process data and defect composition data; specifically, the defect data set can be formed by collecting defect location, defect size, defect image, defect composition, defect process and other process information of the semiconductor device, as well as other related information; wherein the defect composition data is information related to the constituent materials of each defect. Furthermore, the defect data set can also include scanning time data, scanning machine data, etc. The scanning time data is used to describe the scanning time for defects, and the scanning machine data is used to describe the scanning equipment for scanning semiconductor devices.
[0080] In an optional embodiment, executing step S1 to obtain a defect data set of a semiconductor device may include the following steps: scanning and testing the semiconductor device to obtain defect information of the semiconductor device; collecting defect information to form a defect data set. The semiconductor device may be scanned by an optical device or other suitable scanning device to obtain defect information of the semiconductor device. Optionally, the defect information includes at least a defect image, a defect location, and a defect size; the surface of the semiconductor device may have one or more defects, and the semiconductor device may be scanned to obtain information such as the defect location and defect size of each defect, and the corresponding defect image may be captured.
[0081] Next, step S2 is performed to analyze the defects of the semiconductor device according to the defect data set to obtain defect impact data.
[0082] Specifically, the defect data set includes at least defect size data, defect image data, defect process data, etc. The defects of the semiconductor device are counted and analyzed based on the defect size data, defect image data, defect process data and other information to obtain defect impact data, and then the impact of the defects on the final yield of the semiconductor device is determined. The defect impact data can be used to determine the specific delivery direction of the semiconductor device in the delivery operation of the semiconductor device.
[0083] In an optional embodiment, the defect impact data includes a first defect impact rate, and step S2 is performed, including the following steps: analyzing the defects of the semiconductor device according to the defect data set to obtain the corresponding defect impact rate; and calculating the first defect impact rate according to the defect impact rate. The first defect impact rate can be understood as the total defect impact rate of each defect of the current semiconductor device during the processing of the semiconductor device.
[0084] In an optional embodiment, the defect impact data includes a second defect impact rate, and step S2 is performed, including the following steps: analyzing the defects of the semiconductor device to obtain the corresponding defect impact rate and defect kill yield rate; according to the defect kill yield rate, selecting the defect whose defect kill yield rate is greater than the preset kill yield rate threshold from the defects as a high-risk defect; according to the defect impact rate, calculating the second defect impact rate of the high-risk defect. Among them, the second defect impact rate can be understood as the total defect impact rate of each high-risk defect of the current semiconductor device during the processing of the semiconductor device; the defect kill yield rate (KillRate) is used to describe the impact or damage of the defect on the final product yield. The larger the defect kill yield rate, the greater the impact of the corresponding defect on the product yield. The kill yield threshold can be understood as the minimum value of the defect kill yield corresponding to the defect that has a greater impact on the product yield. When the defect kill yield rate exceeds the kill yield threshold, it is considered that the corresponding defect will have a greater impact on the product yield. The specific value of the kill yield threshold can be set accordingly according to actual needs.
[0085] Furthermore, analyzing the defects of semiconductor devices to obtain defect impact data may include the following steps: classifying defects according to their morphology; performing statistical analysis on different types of defects to obtain defect impact rates and defect kill yield rates of different types of defects; based on the defect kill yield rate, selecting defects with defect kill yield rates greater than a preset kill yield rate threshold as high-risk defects; and based on the defect impact rate, calculating a second defect impact rate of the high-risk defect.
[0086] Furthermore, the defect data set includes at least defect size data, defect image data and defect process data; the defect morphology is obtained according to the defect image data, and the defects are classified using the defect morphology; the defect size data, defect process data, defect image data and other information are combined to obtain defect impact data of different types of defects. Figures 2 to 4 , the semiconductor device is, for example, a wafer, and the defect types of the semiconductor device include, for example, surface defects, scratch defects, residue defects, etc.; wherein the defect impact rate can be understood as the ratio of the number of chips affected by defects on a wafer to the total number of effective chips on the wafer.
[0087] In an optional embodiment, the defect impact data includes a third defect impact rate, and step S2 is performed, including the following steps: obtaining a preset detection defect from the defect; analyzing the defect of the semiconductor device to obtain a third defect impact rate of the preset detection defect. The preset detection defect can be understood as a predefined special defect, and the preset detection defect can be defined according to the design requirements of the enterprise or the customer, and the third defect impact rate can be understood as the defect impact rate of the preset detection defect.
[0088] Further, executing step S2 may specifically include the following steps: analyzing the defects of the semiconductor device to obtain the corresponding defect impact rate; obtaining a preset detection defect from the defects of the semiconductor device, and obtaining a third defect impact rate of the preset detection defect based on the defect impact rate.
[0089] Finally, step S3 is executed to compare the defect impact data with the preset defect threshold and defect critical value, and the semiconductor device is dispatched to the first target tool or other process tools according to the comparison result.
[0090] In this embodiment, the first target machine is the machine with the best performance for the next process of the semiconductor device. Compared with other process machines, the next process can be carried out by the first target machine, which can effectively reduce the probability of defects, thereby improving the yield rate of the product. By comparing the defect impact data with the defect threshold and the defect critical value, when the impact of the defect is small, the corresponding semiconductor device can be dispatched to the first target machine to improve the product yield rate.
[0091] In an optional embodiment, before the semiconductor device is dispatched to the first target machine or other process machines according to the comparison result, the following steps are also included: obtaining machine process information; obtaining the past production information of the process machine corresponding to the process generating the defect according to the machine process information; selecting the process machine with the defect impact rate less than the preset impact rate threshold from the process machines as the first target machine for the process generating the defect according to the past production information. The impact rate threshold can be understood as the maximum value of the defect impact rate corresponding to the defect when the number of chips affected by the defect is small, or it can also be understood as the maximum value of the defect impact rate that can be accepted, that is, the defect impact rate less than the impact rate threshold can be accepted during the processing, and the specific value of the impact rate threshold can be set accordingly according to the production status of the process machine or the actual design needs.
[0092] In an optional embodiment, the defect threshold includes a first defect threshold, the defect critical value includes a first defect critical value, the defect impact data includes a first defect impact rate, and the semiconductor device is dispatched to a first target machine or other process machine according to the comparison result, specifically including the following steps: when the first defect impact rate is less than the first defect critical value, the semiconductor device is randomly dispatched to the process machine; when the first defect impact rate is greater than or equal to the first defect critical value and less than or equal to the first defect threshold, the semiconductor device is dispatched to the first target machine; when the first defect impact rate is greater than the first defect threshold, the semiconductor device is scrapped; wherein the first defect threshold is greater than the first defect critical value.
[0093] The first target machine is the process machine that performs best when executing the process that generates defects. In actual production, after completing the current process and before proceeding to the next process, certain defects may have occurred on the semiconductor device, but the defective semiconductor device has not reached the scrap condition. By sending the semiconductor device to the first target machine for the next process, the superposition of defects generated by subsequent processes can be reduced or avoided, which may lead to the scrapping of the semiconductor device, effectively improving product yield, saving production costs, and improving customer satisfaction.
[0094] In an optional embodiment, the defect impact data includes a second defect impact rate, the defect threshold includes a second defect threshold, and the defect critical value includes a second defect critical value. Step S3 is executed, including the following steps: when the second defect impact rate is less than the second defect critical value, the semiconductor device is randomly dispatched to a process machine; when the second defect impact rate is greater than or equal to the second defect critical value and less than or equal to the second defect threshold, the semiconductor device is dispatched to a first target machine; when the second defect impact rate is greater than the second defect threshold, the semiconductor device is scrapped; wherein the second defect threshold is greater than the second defect critical value, the second defect threshold may be equal to or unequal to the first defect threshold, the second defect critical value may also be equal to or unequal to the first defect critical value, and the second defect threshold and the second defect critical value may be set accordingly according to actual needs.
[0095] In an optional embodiment, the defect impact data includes a third defect impact rate, the defect threshold includes a third defect threshold, and the defect critical value includes a third defect critical value. Step S3 is executed, including the following steps: when the third defect impact rate is less than the third defect critical value, the semiconductor device is randomly dispatched to a process machine; when the third defect impact rate is greater than or equal to the third defect critical value and less than or equal to the third defect threshold, the semiconductor device is dispatched to a first target machine; when the third defect impact rate is greater than the third defect threshold, the semiconductor device is scrapped; wherein the third defect threshold is greater than the third defect critical value, the third defect threshold may be equal to or unequal to the first defect threshold or the second defect threshold, the third defect critical value may also be equal to or unequal to the first defect critical value or the second defect critical value, and the third defect threshold and the third defect critical value may be set accordingly according to actual needs.
[0096] In an optional embodiment, the defect data set includes defect component data, and before the semiconductor device is dispatched to the first target machine or other process machines according to the comparison result, the following steps are also included: judging whether the defect has a contamination risk to the process machine according to the defect component data; and marking the semiconductor device for risk when there is a contamination risk. During the processing of semiconductor devices, when the semiconductor device is dispatched before the next process is executed, by detecting whether the semiconductor device has a risk mark, it is judged whether the semiconductor device has a risk of contaminating the process machine, which is used to determine the specific dispatch direction of the subsequent semiconductor devices.
[0097] Furthermore, based on the defect composition data, it is determined whether the defect contains metal components; when the defect contains metal components, it is determined that the defect has a contamination risk to the process tool, and the semiconductor device is marked as a risk.
[0098] In an optional embodiment, before the semiconductor device is dispatched to the first target machine or other process machines according to the comparison result, the following steps are also included: obtaining machine cycle information; according to the machine cycle information, selecting a process machine at the end of its use cycle from the process machines as the second target machine; wherein the use cycle at least includes a component life cycle and a maintenance cycle. The second target machine is a process machine at the end of its use cycle. After the second target machine completes the process, it needs to be maintained, cleaned, or have its components replaced, which can effectively prevent defects from contaminating the process machine.
[0099] Furthermore, dispatching the semiconductor device to the first target machine or other process machine according to the comparison result includes the following steps: dispatching the semiconductor device to the second target machine when the semiconductor device has a risk mark; dispatching the semiconductor device to the first target machine or other process machine when the semiconductor device does not have a risk mark. It should be noted that the above steps are all steps performed when subsequent processes are required. When the semiconductor device has a risk mark, if the subsequent process is no longer required according to actual design requirements, the semiconductor device can be scrapped.
[0100] Further, the defect threshold also includes a fourth defect threshold, the defect impact data includes a first defect impact rate, and step S3 is executed, including the following steps: when the semiconductor device has a risk mark and the first defect impact rate is less than or equal to the fourth defect threshold, the semiconductor device is dispatched to the second target machine; when the semiconductor device does not have a risk mark and the first defect impact rate is less than or equal to the fourth defect threshold, the semiconductor device is dispatched to the first target machine or other process machine; when the first defect impact rate is greater than the fourth defect threshold, the semiconductor device is scrapped. The fourth defect threshold may be equal to or unequal to the first defect threshold, the second defect threshold or the third defect threshold, and the value of the fourth defect threshold may be set according to actual needs.
[0101] In the prior art, in order to prevent defects from contaminating process machines, manual control is required, which seriously wastes human resources and increases labor costs. In addition, the manual control method often has the problem of lack of control, which greatly increases the risk of process machine contamination. Moreover, after the process machine is contaminated, it needs to be cleaned again, which wastes human and material costs and affects production efficiency. More seriously, it will contaminate other semiconductor devices in subsequent production and cause major incidents. In this embodiment, whether the defect has a pollution risk is automatically judged based on the defect component data, and automatic control of semiconductor devices with pollution risks is realized, thereby improving production efficiency. When it is detected that the semiconductor device has a risk mark, the semiconductor device with pollution risk is dispatched to the second target machine for the next process, which can effectively prevent the defect from causing pollution to the process machine, save human and material costs, and effectively avoid the occurrence of major incidents such as superimposed pollution of machines or products.
[0102] Reference Figures 5 to 7 , the first defect impact rate, the second defect impact rate and the third defect impact rate are respectively recorded as M1, M2, and M3, the first defect threshold, the second defect threshold and the third defect threshold are respectively recorded as T1, T2, and T3, and the first defect critical value, the second defect critical value and the third defect critical value are respectively recorded as S1, S2, and S3. After the semiconductor device completes process I, scan the semiconductor device to determine whether the semiconductor device has a risk of contaminating the process tool; when the generated defect has a risk of contaminating the process tool and it is necessary to continue process II, the semiconductor device is dispatched to the second target machine; when it is not necessary to continue process II, the semiconductor device is scrapped.
[0103] Reference Figure 5, when the defects do not pose a risk of contaminating the process machine, the following steps can be performed to dispatch the semiconductor device. When M1<S1, it indicates that the subsequent process will not cause the semiconductor device to be scrapped due to defect superposition, and the semiconductor device can be randomly dispatched to the process machine for process II; when S1≤M1≤T1, it indicates that special control of the semiconductor device is required, and the semiconductor device can be dispatched to the first target machine for process II to reduce or avoid the risk of semiconductor device scrapping due to defect superposition generated by the subsequent process, thereby improving the final product yield and saving the company's production costs; when M1>T1, the semiconductor device is scrapped.
[0104] refer to Figure 6 When the generated defects do not pose a risk of contaminating the process machine, the following steps can be performed to dispatch the semiconductor device. High-risk defects are obtained from the defects of the semiconductor device. When M2<S2, the semiconductor device can be randomly dispatched to the process machine for process II; when S2≤M2≤T2, the semiconductor device can be dispatched to the first target machine for process II; when M2>T2, the semiconductor device is scrapped.
[0105] refer to Figure 7 When the generated defects do not pose a risk of contaminating the process machine, the following steps can be performed to dispatch the semiconductor device. The preset detection defects are obtained from the defects of the semiconductor device. When M3<S3, the semiconductor device can be randomly dispatched to the process machine for process II; when S3≤M3≤T3, the semiconductor device can be dispatched to the first target machine for process II; when M3>T3, the semiconductor device is scrapped.
[0106] As described above, in the semiconductor device dispatching method of the present application, according to the preset defect threshold and defect critical value, when the defect does not pose a contamination risk and the corresponding defect impact data is between the defect critical value and the defect threshold, the semiconductor device is dispatched to the first target machine for the next process, which can effectively reduce or avoid the risk of semiconductor devices being scrapped due to the superposition of defects generated in subsequent processes, thereby improving product yield and saving production costs; by judging whether the defects of the semiconductor device pose a risk of contaminating the process machine, and using the second target machine to perform the next process on the semiconductor device with a contamination risk, it is possible to effectively prevent the defect from causing contamination to the process machine, and avoid the occurrence of major accidents such as superposition of contamination of machines or products.
[0107] Embodiment 2
[0108] This embodiment provides a semiconductor device dispatching system, which uses any semiconductor device dispatching method in the first embodiment to dispatch semiconductor devices. Figure 8The semiconductor device dispatching system in this embodiment includes a data acquisition module, a yield analysis module, a data analysis module and a system dispatching module.
[0109] The data acquisition module is used to obtain a defect data set of a semiconductor device. Optionally, the defect data set includes at least defect location data, defect size data, defect image data, defect process data and defect component data; further, the defect data set may also include scanning time data, scanning machine data, etc.
[0110] The data analysis module is used to obtain the defect data set from the data acquisition module, and then analyze the defects of the semiconductor device using the yield analysis module according to the defect data set to obtain defect impact data, and compare the defect impact data with a preset defect threshold and defect critical value. Optionally, the defect impact data includes a first defect impact rate, a second defect impact rate, and a third defect impact rate.
[0111] The system dispatching module is used for dispatching the semiconductor device to the first target machine or other process machines according to the comparison result.
[0112] In an alternative embodiment, reference Figure 8 ,The semiconductor device dispatching system also includes a defect scanning module and an ,information statistics module.
[0113] The defect scanning module is used to scan and analyze the semiconductor device to obtain the defect information of the semiconductor device. The defect scanning module can be an optical device or other suitable scanning device to scan the semiconductor device to obtain the defect information of the semiconductor device. Optionally, the defect information at least includes a defect image, a defect location, and a defect size; the surface of the semiconductor device may have one or more defects, and the semiconductor device is scanned by the defect scanning module to obtain the defect location, defect size and other information of each defect, and capture the corresponding defect image.
[0114] The data acquisition module is in communication connection with the defect scanning module, and the data acquisition module can collect defect information such as defect image, defect position, defect size, etc. scanned by the defect scanning module to form a defect data set.
[0115] The information statistics module is used to count the machine process information and machine cycle information of the process machine. The machine cycle information is the use cycle information of the process machine during the processing of semiconductor devices, including at least life cycle information, maintenance cycle information, etc. The life cycle information is the life-related information of each component in the process machine, and the machine process information is the process-related information that the process machine can perform, as well as the machine-related information that can perform various processes in the semiconductor processing process.
[0116] The data analysis module is also used to determine whether the defect of the semiconductor device has a risk of contaminating the process machine based on the defect data set. Optionally, the defect data set includes defect component data; based on the defect component data, determine whether the defect has a risk of contaminating the process machine; when there is a risk of contamination, mark the semiconductor device for risk. Further, based on the defect component data, determine whether the defect contains metal components; when the defect contains metal components, determine that the defect has a risk of contamination.
[0117] The data analysis module is also used to select a first target machine and a second target machine from the process machines according to the process machine information and the machine cycle information. Specifically, the data analysis module can obtain the past production information of the process machine corresponding to the process that produces the defect according to the machine process information, and then select the first target machine from the process machines according to the past production information; the data analysis module can also select a process machine at the end of its use cycle from the process machines as the second target machine according to the machine cycle information.
[0118] The data analysis module is also used to set defect thresholds and defect critical values. The defect thresholds and defect critical values in this embodiment can be pre-set by the data analysis module; wherein the defect threshold can be understood as the defect impact rate at which the semiconductor device reaches the scrap condition; the defect critical value can be understood as the defect impact rate of the semiconductor device reaching a certain level, while not reaching the scrap condition of the semiconductor device, and the defect impact rate that may cause the semiconductor device to be scrapped after subsequent processes; optionally, the defect threshold includes a first defect threshold, a second defect threshold, a third defect threshold and a fourth defect threshold, and the defect critical value includes a first defect critical value, a second defect critical value and a third defect critical value, and the defect threshold and defect critical value can be adaptively set according to product type, customer demand or other actual design requirements.
[0119] The system dispatching module is also used to dispatch the semiconductor device to a second target machine.
[0120] In an optional embodiment, the data analysis module is respectively connected to the data acquisition module, the information statistics module, the yield analysis module and the system dispatching module, and the data analysis module includes a threshold setting unit, a contamination risk detection unit, an impact information acquisition unit and a machine definition unit. The threshold setting unit is used to set the defect threshold and the defect critical value; the contamination risk detection unit is used to detect and determine whether the defects of the semiconductor device have the risk of contaminating the process machine; the impact information acquisition unit is used to classify the defects of the semiconductor device according to the defect data set, and use the yield analysis module to analyze and obtain the defect impact data and the defect killing yield; the machine definition unit is used to select the first target machine and the second target machine from the process machine.
[0121] As described above, since this embodiment provides a semiconductor device dispatching system that utilizes any of the semiconductor device dispatching methods in the first embodiment to dispatch semiconductor devices, the semiconductor device dispatching system of this embodiment also has the beneficial effects of the first embodiment.
[0122] Embodiment 3
[0123] This embodiment provides a terminal, including a processor and a memory connected to the processor in communication, wherein the memory is used to store a computer program; the processor is used to execute the computer program stored in the memory, so that the terminal can implement any semiconductor device dispatching method described in the first embodiment.
[0124] The above embodiments are merely illustrative of the principles and effects of the present application and are not intended to limit the present application. Anyone familiar with the technology may modify, change or combine the above embodiments without violating the spirit and scope of the present application. Therefore, all equivalent modifications or changes made by a person of ordinary skill in the art without departing from the spirit and technical ideas disclosed in the present application shall still be covered by the claims of the present application.
Claims
1. A method for dispatching semiconductor devices, characterized in that: The following steps are involved: Acquire defect datasets of semiconductor devices; Analyzing the defects of the semiconductor device according to the defect data set to obtain defect impact data; The defect impact data is compared with a preset defect threshold and a defect critical value, and the semiconductor device is dispatched to a first target tool or other process tools according to the comparison result.
2. The semiconductor device dispatching method according to claim 1, characterized in that: The method of obtaining a defect data set of a semiconductor device comprises the following steps: Scanning and testing the semiconductor device to obtain defect information of the semiconductor device; The defect information is collected to form the defect data set.
3. The semiconductor device dispatching method according to claim 1, characterized in that: Before sending the semiconductor device to a first target machine or other process machine according to the comparison result, the following steps are also included: Obtain machine process information; According to the machine process information, obtaining the past production information of the process machine corresponding to the process that produces the defect; According to the past production information, for the process that generates the defect, a process machine whose defect impact rate is less than a preset impact rate threshold is selected from the process machines as the first target machine.
4. The semiconductor device dispatching method according to claim 1, characterized in that: The defect threshold includes a first defect threshold, the defect critical value includes a first defect critical value, the defect impact data includes a first defect impact rate, and the semiconductor device is dispatched to a first target machine or other process machine according to the comparison result, including the following steps: When the first defect impact rate is less than the first defect critical value, randomly dispatching the semiconductor device to the process tool; When the first defect impact rate is greater than or equal to the first defect critical value and less than or equal to the first defect threshold value, dispatching the semiconductor device to the first target machine; When the first defect impact rate is greater than the first defect threshold, scrapping the semiconductor device; Wherein, the first defect threshold is greater than the first defect critical value.
5. The semiconductor device dispatching method according to claim 1, characterized in that: The defect impact data includes a second defect impact rate, and analyzing the defects of the semiconductor device to obtain the defect impact data includes the following steps: classifying the defects according to their morphology; Analyze the defects to obtain defect impact rates and defect kill yield rates of different types of defects; According to the defect kill yield rate, selecting defects whose defect kill yield rate is greater than a preset kill yield rate threshold from the defects as high-risk defects; According to the defect impact rates of different types of defects, a second defect impact rate of the high-risk defect is calculated.
6. The semiconductor device dispatching method according to claim 5, characterized in that: The defect threshold includes a second defect threshold, the defect critical value includes a second defect critical value, and the semiconductor device is dispatched to a first target machine or other process machine according to the comparison result, including the following steps: When the second defect impact rate is less than the second defect critical value, randomly dispatching the semiconductor device to the process tool; When the second defect impact rate is greater than or equal to the second defect critical value and less than or equal to the second defect threshold value, dispatching the semiconductor device to the first target machine; When the second defect impact rate is greater than the second defect threshold, scrapping the semiconductor device; Wherein, the second defect threshold is greater than the second defect critical value.
7. The semiconductor device dispatching method according to claim 1, characterized in that: The defect impact data includes a third defect impact rate, and analyzing the defects of the semiconductor device to obtain the defect impact data includes the following steps: Obtaining a preset detection defect from the defects; The defects of the semiconductor device are analyzed to obtain a third defect influence rate of the preset detection defect.
8. The semiconductor device dispatching method according to claim 7, characterized in that: The defect threshold includes a third defect threshold, the defect critical value includes a third defect critical value, and the semiconductor device is dispatched to a first target machine or other process machine according to the comparison result, including the following steps: When the third defect impact rate is less than the third defect critical value, randomly dispatching the semiconductor device to the process tool; When the third defect impact rate is greater than or equal to the third defect critical value and less than or equal to the third defect threshold value, dispatching the semiconductor device to the first target machine; When the third defect impact rate is greater than the third defect threshold, scrapping the semiconductor device; Wherein, the third defect threshold is greater than the third defect critical value.
9. The semiconductor device dispatching method according to claim 1, characterized in that: The defect data set includes defect component data. Before the semiconductor device is dispatched to a first target machine or other process machine according to the comparison result, the following steps are also included: Determining, based on the defect component data, whether the defect poses a contamination risk to the process tool; When there is a contamination risk, the semiconductor device is marked as risky.
10. The semiconductor device dispatching method according to claim 9, characterized in that: Before sending the semiconductor device to a first target machine or other process machine according to the comparison result, the following steps are also included: Obtain machine cycle information; According to the machine cycle information, a process machine with a use cycle at the end of its use cycle is selected from the process machines as a second target machine; wherein the use cycle at least includes a component life cycle and a maintenance cycle.
11. The semiconductor device dispatching method according to claim 10, characterized in that: The method of dispatching the semiconductor device to a first target machine or other process machine according to the comparison result includes the following steps: When the semiconductor device has a risk mark, sending the semiconductor device to the second target machine; When the semiconductor device does not have a risk mark, the semiconductor device is sent to the first target tool or other process tools.
12. A semiconductor device dispatching system, utilizing the semiconductor device dispatching method according to any one of claims 1 to 11 to dispatch semiconductor devices, characterized in that: Including data acquisition module, yield analysis module, data analysis module and system dispatching module; The data acquisition module is used to obtain a defect data set of the semiconductor device; The data analysis module is used to obtain the defect data set from the data acquisition module, analyze the defects of the semiconductor device according to the defect data set using the yield analysis module to obtain defect impact data, and compare the defect impact data with a preset defect threshold and a defect critical value; The system dispatching module is used to dispatch the semiconductor device to a first target tool or other process tools according to the comparison result.
13. The semiconductor device dispatching system according to claim 12, characterized in that: It also includes a defect scanning module and an information statistics module; The defect scanning module is used to scan and analyze the semiconductor device to obtain defect information of the semiconductor device, and the data acquisition module collects the defect information to form the defect data set; The information statistics module is used to count the machine process information and machine cycle information of the process machine; The data analysis module is further used to determine whether the defect has a contamination risk to the process tool according to the defect data set, and select the first target tool and the second target tool from the process tools according to the tool process information and the tool cycle information; The dispatching module is further used to dispatch the semiconductor device to the second target machine.
14. A terminal, characterized in that: comprising a processor and a memory in communication with the processor; The memory is used to store computer programs; The processor is used to execute the computer program stored in the memory, so that the terminal can implement the semiconductor device dispatching method according to any one of claims 1 to 11.