Process task execution method and semiconductor process equipment

Abstract

The invention discloses a process task execution method and semiconductor process equipment. The method comprises the steps that an equivalent value of actual atmospheric pressure collected within a set time period is obtained at a preset adjustment time, and the adjustment time comprises at least one of the following time: before a process task is executed, before a process in the process task is executed and before a previous process step of a main process step in the process is executed; acquiring a preset reference atmospheric pressure in the process formula; calculating first compensation time according to the equivalent value of the actual atmospheric pressure and the reference atmospheric pressure; correcting the process time of the main process step in the process formula according to the first compensation time; and executing the main process step based on the corrected process time. According to the method and the device, automatic calculation and correction are realized, errors are not easy to generate, the adjustment opportunities are diversified, and the process time can be adjusted even if the atmospheric pressure changes before the main process step is executed, so that the corrected process time is more accurate, and the influence on the thickness of the oxide film is avoided.

Description

Technical Field

[0001] The present application belongs to the field of semiconductor technology, and in particular, relates to a method for executing a process task and semiconductor process equipment. Background Art

[0002] Semiconductor process equipment, such as vertical furnace oxidation equipment, can more accurately control the oxidation process by adjusting the temperature, gas flow, pressure, and process time in the process chamber, thereby obtaining the desired oxide film thickness and properties. In the oxidation process, the increase in pressure in the process chamber will increase the density of oxygen or water vapor in the process chamber and the diffusion rate in silicon dioxide (SiO2), thereby increasing the oxidation rate. At present, the pressure control method commonly used in vertical furnace oxidation equipment is as follows: the valve piston is controlled to stay at a certain opening through pressure balance, thereby ensuring that the pressure difference between the upstream and downstream is the set pressure, so that the pressure difference inside and outside the process chamber remains stable.

[0003] However, when the atmospheric pressure changes, the pressure inside the process chamber will be inconsistent with the initial required pressure. When the atmospheric pressure changes too much, the rate of oxide film formation will change. At this time, the process time in the process recipe needs to be corrected to offset the effect of pressure change on the oxide film formation rate and ensure that the thickness of the oxide film finally generated is the required thickness.

[0004] In the related art, in order to solve the impact of atmospheric pressure changes on the thickness of the oxide film, before the process task (i.e., the Job task) is executed, the factory side manually performs compensation calculations on the process time of the main process step based on the reference atmospheric pressure recorded in the edited standard process recipe and the actual local atmospheric pressure. The compensation time is determined based on experience, and the process time in the process recipe is corrected based on the manually calculated compensation time before the Job task is executed. However, the above manual calculations and manual corrections are all manual operations, which are prone to errors, and the timing for adjusting the process time is before the Job task is executed. If the atmospheric pressure changes again before the main process step is executed, the process time can no longer be adjusted, making the corrected process time inaccurate, thereby affecting the thickness of the oxide film. Summary of the invention

[0005] The purpose of the embodiments of the present application is to provide a method for executing a process task and a semiconductor process equipment to solve the problem in the related art that manual operation is prone to errors, the corrected process time is not accurate enough, and thus affects the thickness of the oxide film.

[0006] To achieve the above objectives, the present application embodiment adopts the following technical solutions: In a first aspect, an embodiment of the present application provides a method for executing a process task, comprising: at a preset adjustment time, obtaining an equivalent value of the actual atmospheric pressure collected within a set time period, the adjustment time comprising at least one of the following: before the process task is executed, before the process in the process task is executed, and before the previous process step of the main process step in the process is executed; obtaining a preset reference atmospheric pressure in a process recipe; calculating a first compensation time based on the equivalent value of the actual atmospheric pressure and the reference atmospheric pressure; correcting the process time of the main process step in the process recipe based on the first compensation time; and executing the main process step based on the corrected process time.

[0007] In a second aspect, an embodiment of the present application provides a semiconductor process equipment, comprising: a controller, wherein the controller is arranged in a host computer and / or a slave computer of the semiconductor process equipment, the controller comprises at least one processor and at least one memory, wherein a computer program is stored in the memory, and when the computer program is executed by the processor, the steps of the method for executing the process task as described in the embodiment of the first aspect of the present application are implemented.

[0008] At least one of the above technical solutions adopted in the embodiments of the present application can achieve the following beneficial effects: In the embodiment of the present application, at a preset adjustment time, an equivalent value of the actual atmospheric pressure collected within a set time period is obtained, and the adjustment time includes at least one of the following: before the execution of the process task, before the execution of the process in the process task, and before the execution of the previous process step of the main process step in the process, the preset reference atmospheric pressure in the process recipe is obtained, and the first compensation time is calculated according to the equivalent value of the actual atmospheric pressure and the reference atmospheric pressure, and the process time of the main process step in the process recipe is corrected according to the first compensation time; the main process step is executed based on the corrected process time. In the embodiment of the present application, the first compensation time is automatically calculated according to the equivalent value of the actual atmospheric pressure and the reference atmospheric pressure, and the process time of the main process step in the process recipe is automatically corrected according to the first compensation time, so that automatic calculation and automatic correction are realized, and it is not easy to cause errors, and the timing of adjusting the process time can be before the execution of the process task, before the execution of the process in the process task, and before the execution of the previous process step of the main process step in the process, and the adjustment timing is diversified. Even if the atmospheric pressure changes again before the main process step is executed, the process time can be adjusted, so that the corrected process time is more accurate, thereby avoiding affecting the oxide film thickness. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings: Figure 1It is a schematic diagram of forming SiO2 oxide film in a vertical furnace oxidation equipment; Figure 2 Schematic diagram of the thickness of the oxide film changing with atmospheric pressure; Figure 3 It is a schematic diagram of a vertical furnace oxidation equipment; Figure 4 It is a schematic diagram of the material transfer process in the vertical furnace oxidation equipment; Figure 5 A flowchart of a method for executing a process task provided in one embodiment of the present application; Figure 6 A schematic diagram of adjusting the process time provided for one embodiment of the present application; Figure 7 A schematic flow chart of a method for executing a process task provided in another embodiment of the present application; Figure 8 A flowchart of a feasible implementation of a method for executing a process task provided in another embodiment of the present application; Fig. 9 A schematic diagram of an overall flow chart of a method for executing a process task provided in another embodiment of the present application; Fig.10 A schematic structural diagram of a semiconductor process equipment provided for one embodiment of the present application. DETAILED DESCRIPTION

[0010] In order to make the purpose, technical solution and advantages of the present application clearer, the technical solution of the present application will be clearly and completely described below in combination with the specific embodiments of the present application and the corresponding drawings. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present application.

[0011] The terms "first", "second", etc. in this application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described here. In addition, the "and / or" in this application represents at least one of the connected objects, and the character " / " generally represents that the front and back associated objects are in an "or" relationship. It should be noted that the data involved in this application are all obtained on the premise of obtaining user authorization.

[0012] Semiconductor process equipment such as vertical furnace oxidation equipment, the main preparation method for generating SiO2 oxide film is thermal oxidation, such as Figure 1As shown in the figure, by exposing the silicon wafer to oxygen or water vapor at high temperature, the oxygen molecules or water molecules are decomposed and react with silicon to form a SiO2 oxide film. By adjusting the temperature, gas flow, pressure, and process time in the process chamber, the oxidation process can be more accurately controlled to obtain the desired oxide film thickness and properties.

[0013] In the oxidation process, the increase in the pressure in the process chamber will increase the density of oxygen or water vapor in the process chamber and the diffusion rate in SiO2, thereby increasing the oxidation rate.

[0014] At present, the pressure control method commonly used in vertical furnace oxidation equipment is the atmospheric pressure control method (also known as the relative pressure control method) with the relative pressure control valve as the core. The valve piston maintains a certain opening of the pipeline to ensure the passage of airflow. The stepper motor adjusts the pressure of the spring connected to the piston according to the pressure difference set by the process requirements, so that the piston stays at a certain opening through pressure balance, thereby ensuring that the pressure difference between the upstream and downstream is the set pressure, so that the pressure difference inside and outside the process chamber remains stable.

[0015] The above relative pressure control method can solve the following problems: 1) changes in the exhaust pressure of the plant; 2) interference between the exhaust of multiple devices; 3) interference between the exhaust of different parts of the equipment; 4) backflow caused by sudden changes in exhaust pressure; 5) changes in pressure, flow and temperature in the process chamber; 6) drastic changes in the pressure of the reaction chamber caused by wet oxygen process.

[0016] However, when the atmospheric pressure (i.e., relative reference pressure, absolute pressure, which is the pressure expressed with absolute vacuum as the reference) changes, the pressure inside the process chamber will be inconsistent with the initial required pressure. When the atmospheric pressure changes too much, it will affect the formation of the oxide film. When the atmospheric pressure changes by more than 15.5 torr, the thickness of the oxide film can change by 100 angstroms. Figure 2 As shown, the horizontal axis is the atmospheric pressure and the vertical axis is the thickness of the oxide film.

[0017] When the atmospheric pressure changes too much, the rate of oxide film formation will change. At this time, the process time in the process recipe needs to be corrected to offset the effect of pressure changes on the oxide film formation rate and ensure that the thickness of the final oxide film is the required thickness.

[0018] Figure 3 This is a schematic diagram of a vertical furnace oxidation equipment. Figure 3As shown, the vertical furnace oxidation equipment includes multiple loading ports (Load Port) 101, which are bridges between the outside (such as an automated factory end crane) and the vertical furnace oxidation equipment. A wafer transfer box (Front Opening Unified Pod, referred to as FOUP) 102 can be placed on the loading port 101. A wafer transfer box 102 has multiple slots (Slot) (for example, 25 slots) for storing wafers. The loading port 101 has a door opening mechanism for opening the door of the wafer transfer box 102. The vertical furnace oxidation equipment also includes an atmospheric manipulator (Stocker Transfer Robot, referred to as STR) 103, which is responsible for transferring the wafer transfer box 102, and the atmospheric manipulator STR103 includes a scanning (Map) function. During the scanning process, the door of the wafer transport box 102 must be opened and kept still. The arm of the atmospheric robot STR103 is equipped with an infrared probe. By moving the arm up and down, the storage information of the wafers in the wafer transport box 102, such as the number of wafers stored in the wafer transport box 102, can be obtained. The atmospheric robot STR103 can transfer the wafer transport box 102 from the loading port 101 to the stocker 104 and place it in the shelf 105 of the stocker 104. Similarly, the atmospheric robot STR103 can also transfer the wafer transport box 102 in the shelf 105 of the stocker 104 back to the loading port 101. In addition, the atmospheric robot STR103 can also transfer the wafer transfer box 102 placed in the shelf 105 of the stocker 104 to the load lock 106. Similarly, the atmospheric robot STR103 can also transfer the wafer transfer box 102 in the load lock 106 back to the shelf 105 of the stocker 104. The stocker 104 is used to place the wafer transfer box 102. A plurality of (for example, 18) wafer transfer boxes 102 can be placed on one stocker 104. The part of the stocker 104 on which the wafer transfer box 102 is placed is called a shelf 105. The load lock 106 is a pre-vacuum lock, which serves as a bridge for the wafer to enter the process chamber 107. The load lock 106 can place the wafer transfer box 102, and has a door opening mechanism for opening the door of the wafer transfer box 102.

[0019] The vertical furnace oxidation equipment also includes a vacuum robot (Wafer Transfer Robot, referred to as WTR) 108, which is responsible for the transfer of wafers and has a scanning function. It can scan the wafer transfer box 102 on the load lock 106 and the wafer boat 109 in the process module (PM) 107. During the scanning process, the wafer transfer box 102 on the load lock 106 is in an open and stationary state, and the wafer boat 109 is in the starting point (Home) position. The arm of the vacuum robot 108 has an infrared probe, which obtains the storage information of the wafers in the wafer transfer box 102 and the information of the wafers on the wafer boat 109, such as the number of wafers, by moving the arm up and down. The vacuum robot 108 can transfer the wafer from the wafer transfer box 102 of the load lock 106 to the wafer boat 109 of the process chamber 107, and can also transfer the wafer from the wafer boat 109 of the process chamber 107 to the wafer transfer box 102 of the load lock 106. Since the vacuum manipulator 108 is manufactured in the manner of a finger, it has finger properties, for example, it is divided into a single finger and multiple fingers (for example, five fingers). Therefore, the vacuum manipulator 108 can adjust the number of wafers to be taken and placed at one time, for example, 1-5 wafers can be taken and placed as needed each time. The slots in the wafer boat 109 are arranged at intervals in the vertical direction. Taking five fingers as an example, there are five fingers arranged in the vertical direction on the mechanical arm of the vacuum manipulator 108. A single finger can be extended and retracted. If only one finger is extended, a single wafer can be taken, and if all five fingers are extended, five wafers can be taken. The vertical furnace equipment also includes a process chamber 107 for performing corresponding process operations. There is a wafer boat 109 in the process chamber 107 for placing wafers. The number of wafers participating in the process of the process chamber 107 is determined by the number of slots in the wafer boat 109 in the process chamber 107. Currently, there are two specifications of wafer boats 109 with 125 slots and 141 slots.

[0020] It is worth noting that the above Figure 3 Only one example of a vertical furnace oxidation device is shown, and the number of its components, such as the loading port 101, the atmospheric robot STR103, the storage container 104, the loading lock 106, the process chamber 107, the vacuum robot 108 and the wafer boat 109, can be arbitrarily set as needed.

[0021] Figure 4 This is a schematic diagram of the material transfer process in the vertical furnace oxidation equipment. Figure 4 As shown in the figure, the entire transmission process includes the following steps: Carrier In → Charge → Process → Discharge → Carrier Out.

[0022] Carrier In: The user places a wafer carrier containing wafers on the load port, and then the atmospheric robot loads the wafer carrier on the load port into the shelf of the stocker.

[0023] Charge: The atmospheric robot places the wafer transfer box from the shelf of the stocker into the loading lock one by one. The vacuum robot transfers the wafers in the wafer transfer box on the loading lock to the wafer boat in the process chamber. The atmospheric robot then transfers the empty wafer transfer box back to the shelf of the stocker.

[0024] Process: The wafer boat enters the process chamber to participate in process processing.

[0025] DisCharge: The atmospheric robot places the wafer transfer box from the shelf of the storage device into the loading lock one by one. The vacuum robot puts the wafers that have completed the process on the wafer boat back into the wafer transfer box on the loading lock one by one. The atmospheric robot then transfers the wafer transfer box containing the wafers back to the shelf of the storage device.

[0026] Carrier Out: The atmospheric robot transfers the wafer cassette on the stocker shelf back to the load port, where it is then pulled away by the overhead crane.

[0027] Among them, the process of charging (Charge) → executing process (Process) → unloading (DisCharge) is a normal process task (Job task) process. Job task is the task inside the equipment used to transfer wafer transport boxes and wafers to perform oxidation process.

[0028] In the related art, in order to solve the impact of atmospheric pressure changes on the thickness of the oxide film, before the process task (i.e., the Job task) starts to execute, the factory side manually performs compensation calculations on the process time of the main process step based on the reference atmospheric pressure recorded in the edited standard process recipe and the actual local atmospheric pressure. The compensation time is determined based on experience, and the process time in the process recipe is corrected based on the manually calculated compensation time before the Job task is executed. However, the above-mentioned manual calculations and manual corrections are all manual operations, which are prone to errors, and the timing for adjusting the process time is before the Job task is executed, and the adjustment timing is relatively single. If the atmospheric pressure changes again before the main process step is executed, the process time can no longer be adjusted, making the corrected process time inaccurate, thereby affecting the thickness of the oxide film. To this end, the present application proposes a method for executing a process task, a semiconductor process equipment, and a storage medium to solve the problem in the related art that manual operations are prone to errors, the adjustment method is relatively single, making the corrected process time inaccurate, thereby affecting the thickness of the oxide film.

[0029] The technical solutions provided by various embodiments of the present application are described in detail below in conjunction with the accompanying drawings.

[0030] Figure 5 A flowchart of a method for executing a process task provided by an embodiment of the present application is shown below. Figure 5 As shown, the execution method of the process task of the embodiment of the present application may specifically include the following steps: S501, obtaining an equivalent value of the actual atmospheric pressure collected within a set time period at a preset adjustment time, wherein the adjustment time includes at least one of the following: before the execution of a process task, before the execution of a process in a process task, and before the execution of a process step preceding a main process step in a process.

[0031] In the embodiment of the present application, the execution subject of the execution method of the process task of the embodiment of the present application is a controller, which can be set in the upper computer and / or lower computer of the semiconductor process equipment (such as vertical furnace oxidation equipment, etc.).

[0032] The current manual calculation of compensation time is to calculate before the process task (i.e., Job task) is executed (i.e., after the Job task starts, before the charge task starts), and then adjust the process time of the main process step in the process recipe after calculation. However, there is a period of time between the execution of the Job task and the execution of the main process step. The above manual calculation of compensation time cannot realize the compensation calculation of the process time during this period of time. If the actual atmospheric pressure changes again during this period of time, the process time cannot be adjusted. Therefore, in order to ensure more accurate adjustment of the process time, you can choose to automatically calculate the compensation time and correct the timing of the process time in the process recipe, that is, the timing of adjusting the process time.

[0033] Adjustment timing of process time, such as Figure 6 As shown, it can be preset to at least one of the following timings: before the execution of the process task (i.e., the Job task), such as time t1, before the execution of the process (i.e., after the charge task is completed and before the process starts), such as time t2, and before the execution of the previous process step (PreviousStep) of the main process step (MainStep) in the process, such as time t3, etc. It should be noted here that in actual applications, the above multiple timings can be preset, and whether to turn on time compensation can be set for each timing.

[0034] At the preset adjustment time, the actual atmospheric pressure collected within the set time period is obtained, and the equivalent value P of these atmospheric pressures is calculated. Among them, the equivalent value P of multiple atmospheric pressures can be specifically the average value, median value, etc. of multiple atmospheric pressures. The set time period is a preset period of time, and the specific value can be set as needed. The actual atmospheric pressure is the actual local atmospheric pressure currently collected.

[0035] It should be noted here that the collection frequency of the pressure collection device can be set, for example, a value in milliseconds can be set, and the actual atmospheric pressure is collected once every time of this value. The capacity of the atmospheric pressure collection sample can also be set, for example, a value (this value is a positive integer) can be set. When the number of collected samples (i.e., the actual atmospheric pressure) exceeds this value, the earliest collected sample is discarded and the most recently collected sample is saved, so that the number of saved actual atmospheric pressures is maintained at this value. Since the collection frequency is fixed, the saved actual atmospheric pressure is collected within the set time period.

[0036] S502, obtaining a reference atmospheric pressure preset in the process recipe.

[0037] In the embodiment of the present application, after the factory determines the edited process formula as the standard formula, the local atmospheric pressure at that moment is recorded as the reference atmospheric pressure P0.

[0038] S503: Calculate a first compensation time according to the equivalent value of the actual atmospheric pressure and the reference atmospheric pressure.

[0039] In the embodiment of the present application, the corresponding compensation time is calculated based on the equivalent value P of the actual atmospheric pressure obtained in step S501 and the reference atmospheric pressure P0 obtained in step S502, and is recorded as the first compensation time Δt1.

[0040] S504: Correct the process time of the main process step in the process recipe according to the first compensation time.

[0041] In the embodiment of the present application, the process recipe also includes the process time t of the main process step. According to the first compensation time △t1 calculated in step S503, the process time t is corrected to obtain the corrected process time t o , the specific formula is as follows: o =t-△t1.

[0042] S505, executing the main process step based on the corrected process time.

[0043] It should be noted here that whether to execute the execution method of the process task of the embodiment of the present application can be controlled by setting whether to turn on the film thickness atmospheric pressure calculation automatic adjustment (Filmthickness-atmospheric pressure calculation Auto Control, referred to as FAC) function.

[0044] In summary, the execution method of the process task of the embodiment of the present application, at the preset adjustment time, obtains the equivalent value of the actual atmospheric pressure collected within the set time period, and the adjustment time includes at least one of the following: before the execution of the process task, before the execution of the process in the process task, and before the execution of the previous process step of the main process step in the process, obtain the preset reference atmospheric pressure in the process recipe, calculate the first compensation time according to the equivalent value of the actual atmospheric pressure and the reference atmospheric pressure, and correct the process time of the main process step in the process recipe according to the first compensation time; execute the main process step based on the corrected process time. The embodiment of the present application automatically calculates the first compensation time according to the equivalent value of the actual atmospheric pressure and the reference atmospheric pressure, and automatically corrects the process time of the main process step in the process recipe according to the first compensation time, realizes automatic calculation and automatic correction, is not prone to errors, and the timing of adjusting the process time can be before the execution of the process task, before the execution of the process in the process task, and before the execution of the previous process step of the main process step in the process, the adjustment timing is diversified, and even if the atmospheric pressure changes again before the execution of the main process step, the process time can be adjusted, so that the corrected process time is more accurate, thereby avoiding affecting the oxide film thickness.

[0045] Figure 7 A flowchart of a method for executing a process task provided by another embodiment of the present application is shown below. Figure 7 As shown, in Figure 5 Based on the illustrated embodiment, the method for executing the process task of the embodiment of the present application may specifically include the following steps: S701, obtaining an equivalent value of the actual atmospheric pressure collected within a set time period at a preset adjustment time, the adjustment time including at least one of the following: before the execution of a process task, before the execution of a process in a process task, and before the execution of a process step preceding a main process step in a process.

[0046] S702, obtaining a reference atmospheric pressure preset in a process recipe.

[0047] In the embodiment of the present application, steps S701-S702 are the same as steps S501-S502 in the above embodiment and are not described again here.

[0048] In the above embodiment, step S503 “calculating the first compensation time according to the equivalent value of the actual atmospheric pressure and the reference atmospheric pressure” may specifically include the following steps S703-S704: S703, obtaining a pressure influence coefficient factor and a pressure influence constant factor preset in the process recipe.

[0049] In the embodiment of the present application, the pressure influence constant factor B is a preset constant and can be used to directly correct the process time in the process recipe.

[0050] The pressure influence coefficient factor A can, to a certain extent, reflect the change of process time with the change of atmospheric pressure. The pressure influence coefficient factor A can be calculated by the oxide film thickness obtained by the test process, the test process operation time and the atmospheric pressure, and can specifically include the following steps: obtaining the test process time time of the main process step in multiple test processes, the equivalent value Press of the test atmospheric pressure, and the test oxide film thickness h; calculating the pressure influence coefficient factor A according to the test process time time of multiple groups of main process steps, the equivalent value Press of the test atmospheric pressure, and the test oxide film thickness h.

[0051] For example, the following three test processes were performed to obtain the following results: Process Test1: main process step process time time1, atmospheric pressure equivalent value Press1 corresponding to this process step, oxide film thickness h1; Process Test2: main process step process time time1, atmospheric pressure equivalent value Press2 corresponding to this process step, oxide film thickness h2; Process Test3: main process step process time time2, atmospheric pressure equivalent value Press3 corresponding to this process step, oxide film thickness h3; The pressure influence coefficient factor A is calculated using the following formula: A=(h3-h2-((h2-h1) / (Press2-Press1))*press3+((h2-h1) / (Press2-Press1))*press2) / (time2-time1).

[0052] It should be noted here that when the process formula is standardized, the specific values ​​of A and B can be determined, and A and B will no longer change. A and B will be different for each process formula, but A and B will no longer change for any process formula during the Job task.

[0053] S704, calculating a first compensation time according to the equivalent value of the actual atmospheric pressure, the reference atmospheric pressure, the pressure influence coefficient factor and the pressure influence constant factor.

[0054] In the embodiment of the present application, a preset calculation method can be used to calculate the first compensation time △t1, which can be calculated specifically by the following steps: calculating the pressure difference between the reference atmospheric pressure P0 and the equivalent value P of the actual atmospheric pressure; calculating the product value of the pressure influence coefficient factor A and the pressure difference; calculating the sum of the product value and the pressure influence constant factor B to obtain the first compensation time △t1, that is, △t1=A*(P-P0)+B.

[0055] S705: Correct the process time of the main process step in the process recipe according to the first compensation time.

[0056] S706, executing the main process step based on the corrected process time.

[0057] In the embodiment of the present application, steps S705-S706 are the same as steps S504-S505 in the above embodiment and are not described again here.

[0058] Since the temperature in the process chamber will also affect the generation rate of the oxide film, and generally, the temperature of the step before the main process step is the same as the temperature of the main process step, therefore, when the adjustment timing is before the execution of the process step before the main process step in the process, in addition to pressure-time compensation, time compensation can also be performed for temperature deviation, that is, temperature-time compensation.

[0059] Therefore, before the above step S705 of "correcting the process time of the main process step in the process recipe according to the first compensation time", the method for executing the process task in the embodiment of the present application may further include the following steps: obtaining the actual temperature T in the process chamber and the preset target temperature T D ; According to the actual temperature T and the target temperature T D , obtain the corresponding second compensation time △t2.

[0060] In the embodiment of the present application, the actual temperature T is the temperature in the process chamber actually obtained at present. The target temperature T D It is the temperature in the process chamber corresponding to the main process step included in the process recipe.

[0061] Correspondingly, the above step S705 "correcting the process time of the main process step in the process recipe according to the first compensation time" may specifically include the following steps: correcting the process time t according to the first compensation time △t1 and the second compensation time △t2.

[0062] In the embodiment of the present application, the process time t is corrected according to the first compensation time Δt1 and the second compensation time Δt2, and the corrected process time t is obtained. o , the specific formula is as follows: o =t-△t1+△t2.

[0063] The second compensation time Δt2 can be obtained by referring to the calculation method of the first compensation time Δt1 as a first feasible implementation method.

[0064] As a second feasible implementation method, the following steps are used to calculate: According to the target temperature T D The mapping relationship between the preset multiple temperatures and multiple unit temperature compensation times is determined to determine the target temperature T DThe corresponding target unit temperature compensation time, the unit temperature compensation time is the compensation time corresponding to each unit temperature; according to the actual temperature T, target temperature T D and the target unit temperature compensation time, and calculate the second compensation time △t2.

[0065] Specifically, when the pressure and gas flow rate remain unchanged, the film formation results (i.e., the thickness of the oxide film) at each temperature are different. By classifying each temperature into a small range, it can be considered that there is a linear relationship between the temperature and the thickness of the oxide film. Based on this relationship, the process time is adjusted by temperature changes to achieve the same film thickness result. It should be noted here that the entire process chamber can be taken as a whole to construct a mapping relationship between multiple temperatures and multiple unit temperature compensation times, or the mapping relationship between multiple temperatures and multiple unit temperature compensation times can be constructed for different temperature zones of the process chamber, that is, each temperature corresponds to a mapping relationship between multiple temperatures and multiple unit temperature compensation times.

[0066] When mapping relationships between multiple temperatures and multiple unit temperature compensation times are constructed for different temperature zones of the process chamber, the second compensation time △t2 can be calculated by the following steps: D and the target temperature T D The mapping relationship between the preset multiple temperatures corresponding to the corresponding temperature zones and the multiple unit temperature compensation times is determined to determine the target temperature T D The corresponding target unit temperature compensation time; according to the actual temperature T, target temperature T D and the target unit temperature compensation time, and calculate the second compensation time △t2.

[0067] For example, the mapping relationship between the multiple temperatures corresponding to the pre-built multiple temperature zones (Zone1~Zone5) and the multiple unit temperature compensation times is shown in Table 1, wherein the data 1000~1008 in the first column represent different temperatures in degrees Celsius (°C), the data Zone1~Zone5 in the first row represent different temperature zones in the process chamber, and the data in other areas represent the unit temperature compensation times corresponding to different temperatures and different temperature zones, that is, the compensation time corresponding to each 1°C in seconds (s) / °C.

[0068] Table 1 Mapping relationship between multiple temperatures and multiple unit temperature compensation times

[0069] When determining the target unit temperature compensation time corresponding to the target temperature according to the mapping relationship between the target temperature and the preset multiple temperatures and multiple unit temperature compensation times, if there is a temperature consistent with the target temperature in the mapping relationship, the unit temperature compensation time corresponding to the temperature in the mapping relationship is determined as the target unit temperature compensation time R. For example, the target temperature T D When it is 1002, there is a temperature 1002 that is consistent with the target temperature 1002 in the mapping relationship shown in Table 1, then the unit temperature compensation time 2, 2, 5, 2, 0 of each temperature zone corresponding to the temperature 1002 is determined as the target unit temperature compensation time R of each temperature zone.

[0070] Since within a certain small temperature range (such as 1 interval of 2°C in Table 1), it can be considered that the temperature and film thickness are in a linear relationship, and this linear relationship can be converted into temperature-time compensation, the calculation formula for the second compensation time △t2 corresponding to each temperature zone is: △t2=(target temperature T D -actual temperature T)*target unit temperature compensation time R. Assuming that the actual temperatures T of each temperature zone are 1001, 1001.5, 1002, 1003, and 1002.5 respectively, the second compensation time △t2 corresponding to each temperature zone is (1002-1001)*2=2s, (1002-1001.5)*2=1s, (1002-1002)*5=0s, (1002-1003)*2=-2s, (1002-1002.5)*2=-1s. Add the second compensation times △t2 together to get the final second compensation time △t2=2+1+0+(-2)+(-1)=0s.

[0071] If there is no temperature consistent with the target temperature in the mapping relationship, the target unit temperature compensation time R is determined according to the two temperatures closest to the target temperature in the mapping relationship and the two unit temperature compensation times corresponding to the two temperatures. The target unit temperature compensation time R is calculated with the same linear slope as the two closest temperatures, and the formula is as follows: (T D -T L ) / (Rt L ) = (T H -T L ) / (t H -t L ), where T H is the upper limit of the temperature range, T L Temperature range lower limit, t H is the upper limit of interval time compensation, t L is the lower limit of interval time compensation. For example, the target temperature T DWhen the target temperature is 1005, there is no temperature consistent with the target temperature 1005 in the mapping relationship shown in Table 1, then the target unit temperature compensation time corresponding to each temperature zone is set to R, and the two temperatures closest to the target temperature 1005 are T L =1004, T H =1006, the unit temperature compensation time corresponding to these two temperatures in temperature zone 1 is t L =2, t H =2, then the target unit temperature compensation time corresponding to temperature zone Zone1 is R=2s / ℃; the unit temperature compensation times corresponding to these two temperatures in temperature zone Zone2 are t L =2, t H =2, then the target unit temperature compensation time corresponding to temperature zone 2 is R=2s / ℃; the unit temperature compensation times corresponding to these two temperatures in temperature zone 3 are t L =5, t H =5, then the target unit temperature compensation time for temperature zone 3 is R=5s / ℃; the unit temperature compensation times for these two temperatures in temperature zone 4 are t L =3, t H =4, then the target unit temperature compensation time R corresponding to temperature zone 2 satisfies (1005-1004) / (R-3)=(1006-1004) / (4-3), R=3.5s / ℃; the unit temperature compensation times corresponding to these two temperatures in temperature zone 5 are t L =0, t H =0, then the target unit temperature compensation time R corresponding to temperature zone Zone5 = 0s / °C. Assuming that the actual temperatures T of each temperature zone are 1006, 1005.5, 1005, 1004, and 1004 respectively, the second compensation time △t2 corresponding to each temperature zone is (1005-1006)*2=-2s, (1005-1005.5)*2=-1s, (1005-1005)*5=0s, (1005-1004)*3.5=3.5s, and (1005-1004)*0=0s. Adding each second compensation time △t2, the final second compensation time △t2=(-2)+(-1)+0+3.5+0=0.5s is obtained.

[0072] Furthermore, a pressure difference threshold △P can be pre-set to determine whether to perform pressure-time compensation through pressure difference verification. Specifically: if the absolute value of the pressure difference between the reference atmospheric pressure P0 and the equivalent value P of the actual atmospheric pressure |P 0- If |P| is greater than the preset pressure difference threshold △P, the first compensation time △t1 is calculated according to the equivalent value P of the actual atmospheric pressure and the reference atmospheric pressure P. 0-If P| is equal to or less than ΔP, no pressure-time compensation is performed. It should be noted here that different pressure difference thresholds ΔP can be set for different adjustment opportunities.

[0073] Furthermore, a compensation time range △t can be pre-set, and whether to perform process time correction can be determined by compensation time verification. Specifically: if the first compensation time △t1 is within the preset compensation time range △t, the process time t is corrected according to the first compensation time △t1. If the first compensation time △t1 is outside the preset compensation time range △t, an alarm message for characterizing the abnormal compensation time is output. It should be noted here that different compensation time ranges △t can be set for different adjustment times. And when the adjustment time is before the execution of the previous process step of the main process step in the process, since there may still be temperature-time compensation, a first compensation time range corresponding to the first compensation time △t1 and a second compensation time range corresponding to the second compensation time △t1 can be set, or a total compensation time range can be set.

[0074] The compensation time range △t is determined by the compensation time upper limit H and the compensation time lower limit L. The compensation time upper limit and the compensation time lower limit can be percentages relative to the process time t in the process recipe. The compensation time range △t is (-H*t, L*t).

[0075] Furthermore, the current alarm information processing mode can be pre-set, such as retry, continue, and abort. Correspondingly, after outputting the alarm information used to characterize the abnormal compensation time, the execution method of the process task of the embodiment of the present application may also include the following steps: obtaining the current alarm information processing mode; if the current alarm information processing mode is retry, re-execute the compensation process, that is, return to the step of obtaining the equivalent value of the actual atmospheric pressure collected within the set time period in step S701; if the current alarm information processing mode is continue, ignore the abnormality and continue the compensation process, that is, return to step S705 to correct the process time according to the first compensation time. If the current alarm information processing mode is abort, end the compensation process and abort the Job task.

[0076] It should be noted here that the controller notifies the factory of various parameter information or alarm information and receives feedback information from the factory. The controller and the factory exchange information, and with the controller as the basic platform, the factory can achieve more flexible, batch and efficient management.

[0077] In summary, the execution method of the process task of the embodiment of the present application automatically calculates the first compensation time according to the equivalent value of the actual atmospheric pressure and the reference atmospheric pressure, and automatically corrects the process time of the main process step in the process recipe according to the first compensation time, realizing automatic calculation and automatic correction, not prone to errors, and the timing of adjusting the process time can be before the execution of the process task, before the execution of the process in the process task, and before the execution of the previous process step of the main process step in the process. The adjustment timing is diversified. Even if the atmospheric pressure changes again before the execution of the main process step, the process time can be adjusted, so that the corrected process time is more accurate, thereby avoiding affecting the oxide film thickness. When the adjustment timing is before the execution of the previous process step of the main process step in the process, temperature-time compensation can also be performed, so that the corrected process time is more accurate, thereby avoiding affecting the oxide film thickness. Whether to perform pressure-time compensation is determined by pressure difference verification, avoiding pressure-time compensation when the pressure difference is small, saving system computing resources. Whether to perform process time correction is determined by compensation time verification, and when the compensation time is too large, an alarm message is output to timely detect abnormalities and perform subsequent processing.

[0078] To clearly illustrate the execution method of the process task of the embodiment of the present application, the following is combined with Figure 8 A feasible implementation method of the method for executing the process task of the embodiment of the present application is described in detail. Figure 8 As shown, the execution method of the process task in the embodiment of the present application includes (taking the case where temperature-time compensation is not included as an example): S801, FAC function is triggered and executed.

[0079] S802, calculating an equivalent value P of the actual atmospheric pressure collected within a set time period.

[0080] S803, obtaining the reference atmospheric pressure P0, the pressure influence coefficient factor A, the pressure influence constant factor B and the process time t in the process recipe.

[0081] S804, obtaining the pressure difference threshold ΔP, the upper limit H and the lower limit L of the compensation time in the configuration file.

[0082] S805, determine whether the pressure difference condition |P0-P|>ΔP is satisfied, if yes, execute step S806. If no, execute step S814.

[0083] S806, calculating the first compensation time △t1=A*(P-P0)+B.

[0084] S807, determine whether the compensation time condition L*t>△t1>-H*t is satisfied. If yes, execute step S808. If no, execute step S811.

[0085] S808, calculate the corrected process time t o =t-△t1.

[0086] S809, the corrected process time t o Write into the main process step of the process recipe.

[0087] S810, record the compensation result as successful.

[0088] S811, output compensation time abnormality alarm.

[0089] S812, determine whether the alarm information processing mode is Retry. If so, return to step S802. If not, execute step S813.

[0090] S813, determine whether the alarm information processing mode is Continue. If yes, return to step S808. If no, execute S814.

[0091] S814, record the compensation result as failure.

[0092] Examples of actual application scenarios: The local atmospheric pressure recorded when the process formula verified by a factory passed was P0=752 Torr. The pressure influencing factors in the process formula were A=90, B=0, and the process time of the main process step was 3 hours (H), or 10800s. The pressure difference threshold ΔP=0.2Torr, the lower limit of the compensation time L is 20%, and the upper limit of the compensation time H is 15%. Due to local climate reasons, the local atmospheric pressure dropped to 737Torr. At this time, the factory began to execute the job. Before executing the job, the FAC function was triggered: 1) According to the actual atmospheric pressure collected in the set time period before the job task, the equivalent value P=737Torr was calculated. 2) Determine whether the pressure difference condition is met: |P0-P|=|752-737|=15Torr, ΔP=0.2Torr, so |P0-P|>ΔP, triggering the compensation time calculation. 3) A=90, B=0, calculate Δt1= A*(P-P0)+B=90*(737-752)+0=-1350s. 4) Determine whether the compensation time conditions are met: L*t=20%*10800=2160s, -H*t=-15%*10800=-1620s, -1620<-1350<2160, the compensation time is within the controllable range. 5) Calculate the corrected process time t of the main process step o =t-△t1 =10800-(-1350)=12150s. 6) Modify the process time t of the main process step to 12150s and record the successful execution of this FAC.

[0093] To clearly illustrate the execution method of the process task of the embodiment of the present application, the following is combined with Fig. 9 The overall process of the method for executing the process task of the embodiment of the present application is described in detail. Fig. 9 As shown, the method for executing the process task of the embodiment of the present application includes: S901, the job task starts.

[0094] S902, determine whether compensation is required at time t1. If yes, execute step S903. If no, execute step S905.

[0095] S903, executing the FAC function to perform pressure-time compensation.

[0096] S904, determine whether the FAC compensation result at time t1 is successful. If not, execute step S905. If yes, execute step S906.

[0097] S905, output t1 compensation failure alarm. Execute step S924.

[0098] S906, Charging starts.

[0099] S907, Charging ends.

[0100] S908, determine whether compensation is needed at time t2. If yes, execute step S909. If no, execute step S912.

[0101] S909, executing the FAC function to perform pressure-time compensation.

[0102] S910, determine whether the FAC compensation result at time t2 is successful. If not, execute step S911. If yes, execute step S912.

[0103] S911, output t2 compensation failure alarm. Execute step S924.

[0104] S912, Process starts.

[0105] S913, Previous Step begins.

[0106] S914, determine whether compensation is needed at time t3. If yes, execute step S915. If no, execute step S919.

[0107] S915, executing the FAC function to perform pressure-time compensation.

[0108] S916, calculating temperature-time compensation.

[0109] S917, determine whether the FAC compensation result at time t3 is successful. If not, execute step S918. If yes, execute step S919.

[0110] S918, output t3 compensation failure alarm.

[0111] S919, execute MainStep.

[0112] S920, execute NextStep.

[0113] S921, Process ends.

[0114] S922, determine whether the FAC compensation result at time t3 is successful. If not, execute step S924. If yes, execute step S923.

[0115] S923, Discharge.

[0116] S924, the job task is completed.

[0117] The present application also provides a semiconductor process equipment. Fig.10 As shown, the semiconductor process equipment 1000 includes: a controller 1001, which is arranged in the upper computer and / or the lower computer of the semiconductor process equipment 1000, and the controller 1001 includes at least one processor and at least one memory, in which a computer program is stored. When the computer program is executed by the processor, the steps of the execution method embodiment of any of the above-mentioned process tasks are implemented.

[0118] The semiconductor process equipment of the embodiment of the present application automatically calculates the first compensation time according to the equivalent value of the actual atmospheric pressure and the reference atmospheric pressure, and automatically corrects the process time of the main process step in the process recipe according to the first compensation time, realizing automatic calculation and automatic correction, not prone to errors, and the timing of adjusting the process time can be before the execution of the process task, before the execution of the process in the process task, and before the execution of the previous process step of the main process step in the process. The adjustment timing is diversified. Even if the atmospheric pressure changes again before the execution of the main process step, the process time can be adjusted, so that the corrected process time is more accurate, thereby avoiding affecting the oxide film thickness. When the adjustment timing is before the execution of the previous process step of the main process step in the process, temperature-time compensation can also be performed, so that the corrected process time is more accurate, thereby avoiding affecting the oxide film thickness. Whether to perform pressure-time compensation is determined by pressure difference verification, avoiding pressure-time compensation when the pressure difference is small, saving system computing resources. Whether to perform process time correction is determined by compensation time verification, and when the compensation time is too large, an alarm message is output to timely detect abnormalities and perform subsequent processing.

[0119] An embodiment of the present application also proposes a readable storage medium, on which one or more computer programs are stored. The one or more computer programs include instructions. When the program or instructions are executed by a processor in a semiconductor process equipment including multiple application programs, the processor in the semiconductor process equipment can execute the various processes of the execution method embodiment of the above-mentioned process tasks, and is specifically used to execute the steps of the execution method embodiment of any of the above-mentioned process tasks.

[0120] The readable storage medium of the embodiment of the present application automatically calculates the first compensation time according to the equivalent value of the actual atmospheric pressure and the reference atmospheric pressure, and automatically corrects the process time of the main process step in the process recipe according to the first compensation time, so as to realize automatic calculation and automatic correction, and is not easy to cause errors. Moreover, the timing of adjusting the process time can be before the execution of the process task, before the execution of the process in the process task, and before the execution of the previous process step of the main process step in the process. The adjustment timing is diversified. Even if the atmospheric pressure changes again before the execution of the main process step, the process time can be adjusted, so that the corrected process time is more accurate, thereby avoiding affecting the thickness of the oxide film. When the adjustment timing is before the execution of the previous process step of the main process step in the process, temperature-time compensation can also be performed, so that the corrected process time is more accurate, thereby avoiding affecting the thickness of the oxide film. Whether to perform pressure-time compensation is determined by pressure difference verification, so as to avoid performing pressure-time compensation when the pressure difference is small, and save system computing resources. Whether to perform process time correction is determined by compensation time verification, and when the compensation time is too large, an alarm message is output to timely discover the abnormality and perform subsequent processing.

[0121] The systems, devices, modules or units described in the above embodiments may be implemented by computer chips or entities, or by products with certain functions. A typical implementation device is a computer. Specifically, the computer may be, for example, a personal computer, a laptop computer, a cellular phone, a camera phone, a smart phone, a personal digital assistant, a media player, a navigation device, an email device, a game console, a tablet computer, a wearable device, or a combination of any of these devices.

[0122] For the convenience of description, the above device is described in various units according to their functions. Of course, when implementing the present application, the functions of each unit can be implemented in the same or multiple software and / or hardware.

[0123] Those skilled in the art will appreciate that the embodiments of the present application may be provided as methods, systems, or computer program products. Therefore, the present application may adopt the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Moreover, the present application may adopt the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program codes.

[0124] The present application is described with reference to the flowcharts and / or block diagrams of the methods, devices (systems), and computer program products according to the embodiments of the present application. It should be understood that each process and / or box in the flowchart and / or block diagram, as well as the combination of the processes and / or boxes in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0125] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0126] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.

[0127] In a typical configuration, a computing device includes one or more processors (CPU), input / output interfaces, network interfaces, and memory.

[0128] Memory may include non-permanent storage in a computer-readable medium, random access memory (RAM) and / or non-volatile memory in the form of read-only memory (ROM) or flash RAM. Memory is an example of a computer-readable medium.

[0129] Computer readable media include permanent and non-permanent, removable and non-removable media that can be implemented by any method or technology to store information. Information can be computer readable instructions, data structures, program modules or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technology, compact disk read-only memory (CD-ROM), digital versatile disk (DVD) or other optical storage, magnetic cassettes, magnetic tape magnetic disk storage or other magnetic storage devices or any other non-transmission media that can be used to store information that can be accessed by a computing device. As defined in this article, computer readable media does not include temporary computer readable media (transitory media), such as modulated data signals and carrier waves.

[0130] It should also be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, commodity or device. In the absence of more restrictions, the elements defined by the sentence "comprises a ..." do not exclude the existence of other identical elements in the process, method, commodity or device including the elements.

[0131] The present application may be described in the general context of computer-executable instructions executed by a computer, such as program modules. Generally, program modules include routines, programs, objects, components, data structures, etc. that perform specific tasks or implement specific abstract data types. The present application may also be practiced in distributed computing environments where tasks are performed by remote processing devices connected through a communication network. In a distributed computing environment, program modules may be located in local and remote computer storage media, including storage devices.

[0132] Each embodiment in this specification is described in a progressive manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the system embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

[0133] The above are only embodiments of the present application and are not intended to limit the present application. For those skilled in the art, the present application may have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included within the scope of the claims of the present application.

Claims

1. A method for executing a process task, characterized in that: include: At a preset adjustment time, an equivalent value of the actual atmospheric pressure collected within a set time period is obtained, wherein the adjustment time includes at least one of the following: before the execution of a process task, before the execution of a process in the process task, and before the execution of a process step before a main process step in the process; Obtain the reference atmospheric pressure preset in the process recipe; Calculating a first compensation time according to the equivalent value of the actual atmospheric pressure and the reference atmospheric pressure; Correcting the process time of the main process step in the process recipe according to the first compensation time; The main process step is performed based on the corrected process time.

2. The method according to claim 1, characterized in that: The calculating the first compensation time according to the equivalent value of the actual atmospheric pressure and the reference atmospheric pressure comprises: Obtaining a pressure influence coefficient factor and a pressure influence constant factor preset in the process recipe; The first compensation time is calculated according to the equivalent value of the actual atmospheric pressure, the reference atmospheric pressure, the pressure influence coefficient factor and the pressure influence constant factor.

3. The method according to claim 2, characterized in that The calculating the first compensation time according to the equivalent value of the actual atmospheric pressure, the reference atmospheric pressure, the pressure influence coefficient factor and the pressure influence constant factor comprises: calculating a pressure difference between the reference atmospheric pressure and an equivalent value of the actual atmospheric pressure; Calculating the product value of the pressure influence coefficient factor and the pressure difference; The sum of the product value and the pressure influence constant factor is calculated to obtain the first compensation time.

4. The method according to claim 2, characterized in that: Also includes: Obtain the test process time of the main process step, the equivalent value of the test atmospheric pressure and the test oxide film thickness in multiple test processes; The pressure influence coefficient factor is calculated according to the test process time of multiple groups of the main process steps, the equivalent value of the test atmospheric pressure and the test oxide film thickness.

5. The method according to claim 1, characterized in that If the adjustment timing is before the execution of the process step preceding the main process step in the process, then before the process time of the main process step in the process recipe is corrected according to the first compensation time, the method further includes: Obtaining the actual temperature and the preset target temperature in the process chamber; According to the actual temperature and the target temperature, obtaining a corresponding second compensation time; The step of correcting the process time of the main process step in the process recipe according to the first compensation time includes: The process time is corrected according to the first compensation time and the second compensation time.

6. The method according to claim 5, characterized in that The acquiring a corresponding second compensation time according to the actual temperature and the target temperature includes: Determine a target unit temperature compensation time corresponding to the target temperature according to a mapping relationship between the target temperature and a plurality of preset temperatures and a plurality of unit temperature compensation times, wherein the unit temperature compensation time is a compensation time corresponding to each unit temperature; The second compensation time is calculated according to the actual temperature, the target temperature and the target unit temperature compensation time.

7. The method according to claim 6, characterized in that The determining, according to the mapping relationship between the target temperature and a plurality of preset temperatures and a plurality of unit temperature compensation times, a target unit temperature compensation time corresponding to the target temperature comprises: If there is a temperature consistent with the target temperature in the mapping relationship, the unit temperature compensation time corresponding to the temperature in the mapping relationship is determined as the target unit temperature compensation time; If there is no temperature consistent with the target temperature in the mapping relationship, the target unit temperature compensation time is determined according to two temperatures closest to the target temperature in the mapping relationship and two unit temperature compensation times corresponding to the two temperatures.

8. The method according to claim 1, characterized in that The calculating the first compensation time according to the equivalent value of the actual atmospheric pressure and the reference atmospheric pressure comprises: If the absolute value of the pressure difference between the reference atmospheric pressure and the equivalent value of the actual atmospheric pressure is greater than a preset pressure difference threshold, the first compensation time is calculated according to the equivalent value of the actual atmospheric pressure and the reference atmospheric pressure.

9. The method according to claim 1, characterized in that: The step of correcting the process time of the main process step in the process recipe according to the first compensation time includes: If the first compensation time is within a preset compensation time range, the process time is corrected according to the first compensation time.

10. The method according to claim 9, characterized in that Also includes: If the first compensation time is outside the preset compensation time range, an alarm message indicating that the compensation time is abnormal is output.

11. The method according to claim 10, characterized in that After the output is used to indicate the alarm information of the abnormal compensation time, it also includes: Get the current alarm information processing method; If the current alarm information processing mode is retry, return to the step of obtaining the equivalent value of the actual atmospheric pressure collected within the set time period; If the current alarm information processing mode is to continue, the process time is corrected according to the first compensation time; If the current alarm information processing method is to terminate, the process ends.

12. A semiconductor process equipment, characterized in that: include: A controller, wherein the controller is arranged in the upper computer and / or the lower computer of the semiconductor process equipment, and the controller includes at least one processor and at least one memory, wherein the memory stores a computer program, and when the computer program is executed by the processor, the steps of the method as described in any one of claims 1 to 11 are implemented.

Images