Single-cavity full-automatic rapid annealing equipment

Abstract

The invention discloses single-cavity full-automatic rapid annealing equipment in the technical field of wafer annealing. The single-cavity full-automatic rapid annealing equipment comprises a frame, an annealing furnace is mounted in the frame and comprises a furnace body, the furnace body is mounted in the frame, a furnace door is arranged at the end of the furnace body, a driving structure is mounted at the bottom of the furnace body, and an opening and closing electric cylinder is mounted between the furnace door and the furnace body; a movable bracket is arranged at the top of the quartz bracket through a buckle; the irradiation part is installed on the top of the movable support, and the wafer carrying disc is eccentrically arranged on the top of the irradiation part; the transmission structure is mounted in the movable bracket and can be axially connected with the driving structure in a sliding manner; the heating source is mounted at the top of the furnace body; a cavity I is formed in the lampshade; the synchronous structure is mounted between the lampshade and the transmission structure; the wafer can be driven to rotate around the center of the irradiation area and rotate, so that each part of the wafer sequentially passes through the high-heat area in the center of the irradiation area, and the heating uniformity of the wafer is improved; meanwhile, the distance between the wafer and the heating source can be shortened, and the wafer heating efficiency is shortened.

Description

Technical Field

[0001] The invention relates to the technical field of wafer annealing, and in particular to a single-chamber fully automatic rapid annealing device. Background Art

[0002] The rapid annealing furnace uses infrared lamps as heat sources and heats the wafer or material to 300℃-1200℃ in a very short time through an extremely fast heating rate, thereby eliminating some defects inside the wafer or material and improving product performance. It is a semiconductor chip manufacturing equipment. This equipment is commonly used in applications such as ion implantation annealing, rapid annealing after ITO coating, oxide and nitride growth, etc. The rapid annealing furnace is a key equipment in the semiconductor chip production process. Conventional annealing furnaces in the prior art have a slow heating rate; Since the central light intensity of the infrared lamp gradually weakens from the center to the surrounding areas, this means that the heat emitted by the infrared lamp is higher in the middle than around it. Some wafers are now fixed in the center of the infrared lamp irradiation area (some wafers rotate). This will cause the temperature of the wafer in the center of the infrared lamp irradiation area to be higher than the surrounding areas, resulting in uneven heating of the wafer as a whole, which can easily cause stress concentration on the wafer and lead to cracking or damage of the wafer. Summary of the invention

[0003] The technical problem of the present invention is to provide a single-chamber fully automatic rapid annealing equipment.

[0004] To achieve the above object, the present invention provides the following technical solution: a single-chamber fully automatic rapid annealing device, comprising a frame, in which a wafer boat platform, a robotic arm, a cooling station, an annealing furnace, a wafer carrier, and a lifting mechanism are installed: the annealing furnace comprises: The furnace body is installed in the frame, and a furnace door is arranged at the end. A driving structure is installed at the bottom of the furnace body, and an opening and closing electric cylinder is installed between the furnace door and the furnace body; The quartz bracket is installed on the inner side of the furnace door, and a movable bracket is provided on the top through a buckle; An irradiation member is mounted on the top of the movable support, and the wafer carrier is eccentrically arranged on the top of the irradiation member; The transmission structure is installed in the movable bracket and can be axially slidably connected with the driving structure to drive the wafer carrier to rotate on its own and around the axis of the irradiated part; The heating source is installed on the top of the furnace; A lampshade is installed on the top of the furnace body and arranged outside the heating source. A cavity 1 is arranged inside the lampshade. The gas in the cavity 1 adjusts the height of the lampshade through thermal expansion and contraction to change the beam angle of the heating source. The synchronous structure is installed between the lampshade and the transmission structure; when the height of the lampshade changes, the synchronous structure changes the height of the wafer carrier in the same direction and in the same proportion through the transmission structure.

[0005] As a further solution of the present invention, the lampshade includes a fixing part fixed to the furnace body, the fixing part is slidably provided with a movable part, a movable ring fixed to the fixing part is slidably provided inside the movable part, the space enclosed by the movable ring and the movable part is cavity 2, the cavity 1 is enclosed by the movable ring, the movable part and the fixing part, and a speaker cover is fixed to the bottom of the movable part.

[0006] As a further solution of the present invention, the synchronization structure includes: Lever 1 is rotatably arranged on the lower surface of the top of the furnace body, and the lever 1 is connected to the movable part through a slide groove; when the height of the lampshade changes, the lever 1 rotates around the hinge with the furnace body, and the height of the outer end changes proportionally; A vertical rod is vertically slidably arranged on the side wall of the furnace body, and the top is connected to a lever through a slide groove; Lever 2 is rotatably arranged on the upper surface of the bottom of the furnace body, and the outer end is connected to the vertical rod through a slide groove, and the inner end of the lever 2 can drive the movable bracket to rise and fall through the driving structure and the transmission structure; when the height of the vertical rod changes, the lever 2 rotates at the hinge with the furnace body, and the height of the inner end changes proportionally.

[0007] As a further solution of the present invention, the transmission structure includes: A transmission gear ring is coaxially fixed with the irradiation member, and a transmission gear is meshed inside the transmission gear, which is arranged to rotate around the axis of the irradiation member. A boss is axially slidably arranged on the top of the transmission gear through a key, a return spring is arranged between the boss and the transmission gear, and the boss is assembled with the wafer carrier through a key; The transmission shaft is coaxially rotatably arranged with the irradiation member, and the transmission shaft drives the boss to rotate through a connecting member. A transmission groove is arranged on the bottom side wall of the transmission shaft, and the driving structure can press down the boss through the transmission groove and drive it to rotate.

[0008] As a further solution of the present invention, the driving structure includes: a driving motor installed at the bottom of the furnace body, the output shaft of the driving motor is slidably connected to the driving shaft through a key, a swivel is rotatably provided on the side wall of the driving shaft, the swivel is connected to the lever two through a sliding shaft, and a transmission member is fixed on the top of the driving shaft, and the transmission member is pressed down through a transmission groove and drives the driving shaft to rotate.

[0009] As a further solution of the present invention, a cover plate is rotatably provided on the top of the irradiation part, the cover plate is connected to the transmission shaft by a connecting piece, the cover plate is eccentrically provided with a positioning groove matching the wafer carrier, the side wall of the positioning groove is connected to a clamping cavity, and a clamping part is slidably provided in the clamping cavity.

[0010] As a further solution of the present invention, the quartz support is fixed with a limiting piece for limiting the movable support, a clamping piece with a U-shaped structure is clamped inside the limiting piece, and the clamping piece is fixed to the movable support.

[0011] As a further solution of the present invention, a sliding rheostat is installed between the vertical rod and the furnace body, the sliding rheostat slider and the resistance column are respectively fixed to the vertical rod and the furnace body, and the sliding rheostat is electrically connected to the drive motor for adjusting the input current of the drive motor and changing the speed of the drive motor.

[0012] Compared with the prior art, the present invention has the following beneficial effects: In the present invention, the driving structure drives the wafer carrier to rotate by itself and rotate around the axis of the irradiation component through the transmission structure. The wafer on the wafer carrier rotates slowly, which can make various parts of the wafer pass through the center of the irradiation area in turn, ensuring that the center and the surrounding areas of the wafer are heated evenly, avoiding the wafer from cracking and damaging due to stress concentration; the wafer also rotates around the axis of the irradiation component at the same time, which can make the wafer contact with various parts of the irradiation area in turn, avoiding the situation that the wafer is heated unevenly due to uneven distribution of light from the heating source, and further avoiding the situation that the wafer is cracked and damaged due to stress concentration.

[0013] In the present invention, as the power of the heating source increases, the temperature around the heating source increases with the increase in the power of the heating source, the gas in the cavity expands due to the heat, causing the lampshade to rise, and the lampshade drives the wafer carrier to rise proportionally through the synchronous structure, thereby shortening the distance between the wafer and the heating source, reducing heat loss, improving the heating efficiency of the wafer, and shortening the heating time of the wafer; when the lampshade rises, it will also increase the beam angle of the heating source, so that the irradiation area on the irradiated part always remains overlapped with it, avoiding the irradiation area failing to cover the irradiated part, resulting in part of the wafer being outside the irradiation area for a short time, resulting in excessive temperature difference in the wafer in a short time, resulting in cracking and damage to the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for describing the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying creative work.

[0015] Figure 1 It is a schematic diagram of the overall structure of the present invention; Figure 2 It is a schematic diagram of the overall internal structure of the present invention; Figure 3 This is a schematic structural diagram of the annealing furnace door in a closed state according to the present invention; Figure 4This is a schematic structural diagram of the annealing furnace door in an open state of the present invention; Figure 5 It is a partial structural schematic diagram of the annealing furnace door in the open state of the present invention; Figure 6 It is a schematic cross-sectional structure diagram of the annealing furnace door in a closed state of the present invention; Figure 7 For the present invention Figure 6 The enlarged structural diagram at A in the middle; Figure 8 A schematic diagram of the motion trajectory of the wafer carrier of the present invention; Fig. 9 A schematic diagram of the motion trajectory of the wafer carrier of the present invention; Fig.10 It is a schematic diagram of the synchronization structure and its connection relationship structure of the present invention; Fig.11 It is a schematic diagram of the cross-sectional structure of the irradiated component of the present invention; Fig.12 For the present invention Fig.11 The enlarged structural diagram at B in the middle; Fig.13 For the present invention Fig.11 The enlarged structural diagram at C in the middle; Fig.14 This is a schematic diagram of the vertical rod and its connection relationship structure of the present invention; Fig.15 This is a schematic diagram of the connection relationship between the drive shaft and the transmission shaft of the present invention; Figures: 1. Frame; 11. Crystal boat platform; 12. Robotic arm; 13. Cooling station; 14. Wafer carrier; 15. Lifting mechanism; 16. Sliding rheostat; 2. Annealing furnace; 21. Furnace body; 22. Furnace door; 23. Opening and closing electric cylinder; 24. Quartz bracket; 25. Movable bracket; 4. Heating source; 41. Lamp cover; 42. Cavity 1; 43. Movable part; 44. Movable ring; 45. Cavity 2; 46. Fixing part; 47. Speaker cover; 5. Synchronous structure; 51. Lever 1; 52. Vertical rod; 53. Lever 2; 6. Transmission structure; 61. Transmission gear ring; 62. Transmission gear; 63. Boss; 64. Return spring; 65. Transmission shaft; 66. Transmission groove; 7. Driving structure; 71. Driving motor; 72. Driving shaft; 73. Rotating ring; 74. Sliding shaft; 75. Transmission member; 8. Irradiation member; 81. Cover plate; 82. Positioning groove; 83. Clamping cavity; 84. Clamping member; 91. Limiting member; 92. Clip-on member. DETAILED DESCRIPTION

[0016] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0017] See also Figure 1-Figure 15 The present invention provides a technical solution: a single-chamber fully automatic rapid annealing device, comprising a frame 1, in which a wafer boat platform 11, a robot arm 12, a cooling station 13, an annealing furnace 2, a wafer carrier 14, and a lifting mechanism 15 are installed: See also Figure 1-4 , Wafer boat platform 11: The wafer boat platform 11 is a device for placing wafer boat boxes. The wafer boat boxes are manually placed on the wafer boat platform 11. The wafer boat platform 11 has material box detection and wafer convex piece detection; The robot arm 12 is mainly used as a component for transferring wafers; After each wafer is taken out from the wafer boat box, there will be a certain deviation in the center of the position. Before each wafer is placed in the annealing furnace 2, it is necessary to place the wafer on the wafer aligner for centering calibration. Ensure that each wafer is placed in the annealing furnace 2 in the same position; Because the temperature of the annealing furnace 2 is usually high after the wafer is annealed at high temperature, the robot arm 12 is required to take the wafer after high temperature annealing and place it on the cooling station 13 for cooling; The valves in the vacuum system are all program-controlled and interlocked. When the power is off, the valves will automatically close to protect the pressure in the furnace. The annealing furnace 2 has a water-cooling structure inside. The annealing furnace 2 is made of aluminum alloy. The inner wall of the annealing furnace 2 is plated with gold. During the rapid annealing process, the gold plating on the inner wall can reflect light and heat to prevent the temperature in the annealing furnace 2 from dissipating; The wafer carrier 14 is made of silicon carbide, which has excellent thermal conductivity and high temperature resistance, and can improve the temperature uniformity during the wafer heat treatment process; The power regulator is mainly used to adjust the power of the heating source 4. By changing the power of the heating source 4, the brightness of the heating source 4 is changed, thereby changing the radiated heat to the wafer. The cooling water circuit has one inlet and one outlet. The cooling circuit has a water ball valve to control the on-off to protect the internal pipes of the machine from water leakage. The circuit is equipped with a water flow switch to detect that an alarm will be prompted when the water flow cannot meet the demand. The cooling water circuit is diverted to each location of the whole machine that needs cooling through the diversion row; The lifting mechanism 15 and the wafer carrier 14 are supported on the quartz support 24 of the furnace door 22. When the robot arm 12 takes and places the wafer, the lifting mechanism 15 below is required to lift the wafer. Thermocouples detect the real-time temperature of the product; During use, the wafer boat box is manually placed on the wafer boat platform 11, the robot arm 12 takes out the wafer from the wafer boat box, and transfers the wafer to the wafer aligner for wafer centering and positioning. After the wafer is positioned, it is transferred to the quartz support 24 by the robot arm 12. The furnace door 22 is closed and the heat treatment process is carried out. After the process is completed, the robot arm 12 transfers the wafer back to the cooling station 13 for cooling. After the cooling is completed, the robot arm 12 transfers the wafer back to the wafer boat box; The annealing furnace 2 comprises: The furnace body 21 is installed in the frame 1, and a furnace door 22 is provided at the end. A driving structure 7 is installed at the bottom of the furnace body 21, and an opening and closing electric cylinder 23 is installed between the furnace door 22 and the furnace body 21; The quartz support 24 is installed inside the furnace door 22, and a movable support 25 is provided on the top through a buckle; the quartz material has good light transmittance, high temperature resistance, and is not easy to absorb heat. It mainly serves as a carrier for the wafer carrier 14; the product is placed on the quartz support 24, and the product is sent into the furnace body 21 during the process of closing the furnace door 22; The irradiation member 8 is mounted on the top of the movable support 25, and the wafer carrier 14 is eccentrically arranged on the top of the irradiation member 8; The transmission structure 6 is installed in the movable bracket 25 and can be axially slidably connected with the driving structure 7 to drive the wafer carrier 14 to rotate and rotate around the axis of the irradiation member 8; A heating source 4 is installed on the top of the furnace body 21; The lampshade 41 is installed on the top of the furnace body 21 and is arranged outside the heating source 4. A cavity 42 is arranged in the lampshade 41. The gas in the cavity 42 adjusts the height of the lampshade 41 through thermal expansion and contraction, thereby changing the beam angle of the heating source 4. The synchronous structure 5 is installed between the lampshade 41 and the transmission structure 6; when the height of the lampshade 41 changes, the synchronous structure 5 changes the height of the wafer carrier 14 in the same direction and in the same proportion through the transmission structure 6; For details, see Figure 5-9, close the furnace door 22 to seal the furnace body 21, connect the vacuum pipe to the vacuum pump, and evacuate the furnace body 21. After the furnace body 21 is relatively vacuum, the heating source 4 is powered on, and the input power of the heating source 4 is adjusted by the power regulator, so that the output power of the heating source 4 first increases at a uniform rate. When the thermocouple detects that the wafer temperature reaches 1200°C, the power of the heating source 4 decreases at a uniform rate. Then, the furnace body 21 is cooled down by the cooling water channel. After the cooling is completed, the vacuum pipe is opened to connect the furnace body 21 with the outside world. The furnace door 22 is opened by the opening and closing electric cylinder 23. The quartz support 24 and the wafer carrier 14 carrying the wafer are pulled out of the furnace body 21. The lifting mechanism 15 lifts the movable support 25 and the wafer. The robotic arm 12 takes out the wafer and places it in the cooling station 13 for cooling. After the wafer is cooled, it is placed back in the wafer boat box. After the furnace door 22 is closed, the heating source 4 irradiates the irradiated part 8 (the irradiation area of ​​the heating source 4 overlaps with the irradiated part 8, and local heating can reduce the loss of parts in the furnace body 21, and simultaneously ensure the uniformity of heating and shorten the cooling time), and the transmission structure 6 is connected to the driving structure 7. The driving structure 7 drives the wafer carrier 14 to rotate through the transmission structure 6, and at the same time rotates around the axis of the irradiated part 8 (that is, rotates around O1), see Figure 8 , the wafer on the wafer carrier 14 rotates slowly, so that each part of the wafer can pass through the high-heat area in the center of the irradiation area in turn, ensuring that the center and the periphery of the wafer are evenly heated, and avoiding the wafer cracking and damage due to stress concentration; the wafer also rotates around the axis of the irradiation member 8 at the same time, so that the wafer can contact each part of the irradiation area in turn, and can avoid the situation that the wafer is unevenly heated due to the uneven distribution of the irradiation light from the heating source 4, and further avoid the situation that the wafer is cracked and damaged due to stress concentration; See also Fig. 9 As the power of the heating source 4 increases, the temperature around the heating source 4 increases, and the gas in the cavity 42 expands due to the heat, causing the lampshade 41 to rise. The lampshade 41 drives the wafer carrier 14 to rise proportionally through the synchronization structure 5, shortening the distance between the wafer and the heating source 4, reducing heat loss, improving the heating efficiency of the wafer, and shortening the heating time of the wafer; the rise of the lampshade 41 will also increase the beam angle of the heating source 4, so that the irradiation area on the irradiation member 8 always remains overlapped with it, avoiding the irradiation area failing to cover the irradiation member 8, resulting in part of the wafer being outside the irradiation area for a short time, resulting in excessive temperature difference in the wafer in a short time, resulting in cracking and damage of the wafer.

[0018] As a further solution of the present invention, the lampshade 41 includes a fixing member 46 fixed to the furnace body 21, the fixing member 46 is slidably provided with a movable member 43, a movable ring 44 fixed to the fixing member 46 is slidably provided in the movable member 43, the space enclosed by the movable ring 44 and the movable member 43 is a cavity 2 45 (cavity 2 45 is connected to the outside, not marked in the figure), the cavity 1 42 is surrounded by the movable ring 44, the movable member 43 and the fixing member 46, and a horn cover 47 is fixed to the bottom of the movable member 43; For details, see Figure 6 and Figure 7 When the power of the heating source 4 increases, the gas in the cavity 1 42 and the cavity 2 45 will expand, and the gas in the cavity 2 45 will be discharged to the outside, while the gas in the cavity 1 42 cannot be discharged. The gas in the cavity 1 42 expands and pushes the movable part 43 to rise, and can drive the irradiation part 8 to rise and fall through the driving structure 7 and the transmission structure 6, and can also increase the beam angle of the heating source 4; conversely, when the power of the heating source 4 decreases, the irradiation part 8 descends, and the beam angle of the heating source 4 decreases; the beam angle of the heating source 4 is adjusted in real time according to the output power of the heating source 4, and the light emitted by the heating source 4 is adjusted in real time to coincide with the movable irradiation part 8, thereby improving the uniformity and accuracy of temperature control.

[0019] As a further solution of the present invention, the synchronization structure 5 includes: A lever 51 is rotatably disposed on the lower surface of the top of the furnace body 21, and the lever 51 is connected to the movable member 43 via a slide groove; when the height of the lampshade 41 changes, the lever 51 rotates around the hinge with the furnace body 21, and the height of the outer end changes proportionally; A vertical rod 52 is vertically slidably disposed on the side wall of the furnace body 21, and the top is connected to the lever 1 51 through a slide groove; The second lever 53 is rotatably arranged on the upper surface of the bottom of the furnace body 21, and the outer end is connected to the vertical rod 52 through a slide groove. The inner end of the second lever 53 can drive the movable bracket 25 to rise and fall through the driving structure 7 and the transmission structure 6; when the height of the vertical rod 52 changes, the hinge between the second lever 53 and the furnace body 21 rotates, and the height of the inner end changes proportionally; For details, see Fig.10 When the movable part 43 rises, the inner end of the lever 51 rises accordingly, the lever 51 rotates around the hinge with the furnace body 21, and the outer end of the lever 51 falls. It can be seen from the figure that the hinge between the lever 51 and the furnace body 21 is close to the movable part 43, so the moving distance of the outer end of the lever 51 is proportionally increased compared with the inner end; The outer end of the lever 1 51 drives the vertical rod 52 to descend, and the vertical rod 52 presses the outer end of the lever 2 53 downward, and the lever 2 53 rotates around the hinge with the furnace body 21, and the inner end of the lever 2 53 rises. It can be seen from the figure that the hinge between the lever 2 53 and the furnace body 21 is close to the vertical rod 52, so the moving distance of the inner end of the lever 2 53 is proportionally increased compared with the outer end; The inner end of lever 2 53 drives the movable bracket 25 to rise through the driving structure 7 and the transmission structure 6, so that the wafer can rise synchronously with the movable part 43, and the rising distance of the movable part 43 is increased twice in proportion through lever 1 51 and lever 2 53, so that the movable bracket 25 and the rising distance of the movable part 43 increase in proportion, ensuring that the rising distance of the wafer increases, improving the heating speed of the wafer, and being able to match the irradiation area to avoid the irradiation area being too large or too small, causing heat loss or uneven heating.

[0020] As a further solution of the present invention, the transmission structure 6 includes: The transmission gear ring 61 is coaxially fixed with the irradiation member 8, and is meshed with a transmission gear 62 arranged to rotate around the axis of the irradiation member 8 on its inner side. A boss 63 is axially slidably arranged on the top of the transmission gear 62 through a key. A return spring 64 is arranged between the boss 63 and the transmission gear 62. The boss 63 is assembled with the wafer carrier 14 through a key. The transmission shaft 65 is coaxially rotatably arranged with the irradiation member 8, and the transmission shaft 65 drives the boss 63 to rotate through the connecting member. The bottom side wall of the transmission shaft 65 is provided with a transmission groove 66, and the driving structure 7 can press down the boss 63 through the transmission groove 66 and drive it to rotate; For details, see Figure 10-13 The driving structure 7 drives the transmission shaft 65 to rotate, and the transmission shaft 65 drives the boss 63 to rotate around the axis of the irradiation member 8, and the boss 63 drives the transmission gear 62 and the wafer carrier 14 to rotate around the axis of the irradiation member 8, so that the wafer contacts each position of the irradiation area in sequence; at the same time, the transmission gear 62 rotates under the action of the transmission gear ring 61, so that the wafer carrier 14 rotates, so that each part of the wafer can pass through the center of the irradiation area in sequence, ensuring that the center and the periphery of the wafer are heated evenly; When the furnace door 22 is closed, the driving structure 7 presses down the boss 63 through the transmission slot 66, so that the wafer carrier 14 descends into the irradiation unit 8, lowering the center of gravity of the wafer and reducing the stability of the wafer; After the furnace door 22 is opened, the driving structure 7 is disengaged from the transmission slot 66 , and the return spring 64 fixes the boss 63 , and fixes the wafer irradiation part 8 inside, so as to facilitate the grabbing of the robot arm 12 .

[0021] As a further solution of the present invention, the driving structure 7 includes: a driving motor 71 installed at the bottom of the furnace body 21, the output shaft of the driving motor 71 is slidably connected to a driving shaft 72 through a key, a rotating ring 73 is rotatably arranged on the side wall of the driving shaft 72, the rotating ring 73 is connected to the lever 2 53 through a sliding shaft 74, and a transmission member 75 is fixed on the top of the driving shaft 72, and the transmission member 75 is pressed down through the transmission groove 66 and drives the transmission shaft 65 to rotate; For details, see Figure 10-13 The driving motor 71 drives the driving shaft 72 to rotate through the output shaft, and the driving shaft 72 drives the transmission member 75 to rotate. The transmission member 75 presses down the transmission shaft 65 through the key on the inner wall and drives the transmission shaft 65 to rotate, thereby reducing the height of the wafer and driving the wafer to rotate; When the furnace door 22 is closed, the transmission shaft 65 is coaxial with the driving shaft 72. When the furnace body 21 is vacuumed, the pressure in the furnace body 21 decreases, and the movable part 43 rises, causing the inner end of the lever 2 53 to rise proportionally. The lever 2 53 drives the rotating ring 73 to rise through the sliding shaft 74, and the rotating ring 73 drives the driving shaft 72 to rise along the output shaft of the driving motor 71. At the same time, the driving shaft 72 approaches the transmission shaft 65, so that the transmission member 75 partially overlaps with the transmission groove 66. When the driving shaft 72 rotates, the driving shaft 72 can drive the transmission shaft 65 to rotate and descend through the transmission member 75 and the transmission groove 66, thereby realizing the rotation and descent of the wafer; the transmission shaft 65 and the transmission member 75 are partially overlapped by vacuuming, thereby reducing the difficulty of assembly between the two.

[0022] As a further solution of the present invention, a cover plate 81 is rotatably provided on the top of the irradiation member 8, and the cover plate 81 is connected to the transmission shaft 65 through a connecting member, and the cover plate 81 is eccentrically provided with a positioning groove 82 matching the wafer carrier 14, and the side wall of the positioning groove 82 is connected to a clamping cavity 83, and a clamping member 84 is slidably provided in the clamping cavity 83; Specifically, the transmission shaft 65 can drive the cover plate 81 to rotate around the axis of the irradiation member 8 through the connecting member, and the cover plate 81 supports the wafer carrier 14, thereby ensuring the stability of the rotation of the wafer carrier 14; The diameter of the positioning groove 82 is larger than that of the wafer carrier 14, so that when the wafer carrier 14 is lowered, the wafer carrier 14 can be prevented from falling into the positioning groove 82, and the wafer carrier 14 can be prevented from being separated from the boss 63, which would affect the rotation of the wafer carrier 14. As the temperature rises, the gas in the space enclosed by the clamping cavity 83 and the outer end surface of the clamping member 84 expands due to the heat, causing the clamping member 84 to move closer to the wafer carrier 14, shortening the gap between the wafer carrier 14 and the positioning groove 82, and further improving the stability of the wafer carrier 14 during rotation; it should be noted that the clamping member 84 does not contact the wafer carrier 14 to avoid affecting the rotation of the wafer carrier 14.

[0023] As a further solution of the present invention, the quartz support 24 is fixed with a limiting member 91 for limiting the movable support 25, and a U-shaped clamping member 92 is clamped in the limiting member 91, and the clamping member 92 is fixed to the movable support 25; Specifically, the quartz support 24 can be quickly connected to or separated from the movable support 25 through the clamping piece 92, so that the robot arm 12 can take the wafer conveniently.

[0024] As a further solution of the present invention, a sliding rheostat 16 is installed between the vertical rod 52 and the furnace body 21, and the sliding rheostat 16 slider and the resistance column are respectively fixed to the vertical rod 52 and the furnace body 21, and the sliding rheostat 16 is electrically connected to the drive motor 71, and is used to adjust the input current of the drive motor 71 and change the speed of the drive motor 71; Specifically, when the vertical rod 52 descends, the slider of the sliding rheostat 16 and the resistor column produce relative displacement, changing the input current of the drive motor 71 electrically connected thereto, thereby controlling the rotation of the drive motor 71. That is, the smaller the distance between the wafer and the heating source 4, the greater the relative displacement between the slider of the sliding rheostat 16 and the resistor column, the faster the rotation speed of the drive motor 71, and the faster the rotation speed of the wafer, thereby avoiding damage to the wafer due to excessive temperature difference.

Claims

1. A single-chamber fully automatic rapid annealing device, comprising a frame (1), wherein a wafer boat platform (11), a robotic arm (12), a cooling station (13), an annealing furnace (2), a wafer carrier (14), and a lifting mechanism (15) are installed in the frame (1), characterized in that: The annealing furnace (2) comprises: A furnace body (21) is installed in the frame (1) and is provided with a furnace door (22) at the end thereof; a driving structure (7) is installed at the bottom of the furnace body (21); and an opening and closing electric cylinder (23) is installed between the furnace door (22) and the furnace body (21); A quartz support (24) is installed on the inner side of the furnace door (22), and a movable support (25) is provided on the top through a buckle; An irradiation member (8) is mounted on the top of the movable support (25), and the wafer carrier (14) is eccentrically arranged on the top of the irradiation member (8); A transmission structure (6) is installed in the movable bracket (25) and is axially slidably connected to the driving structure (7) and is used to drive the wafer carrier (14) to rotate and rotate around the axis of the irradiation member (8); A heating source (4) is installed on the top of the furnace body (21); A lampshade (41) is mounted on the top of the furnace body (21) and is arranged outside the heating source (4); a cavity (42) is arranged inside the lampshade (41); the gas inside the cavity (42) adjusts the height of the lampshade (41) through thermal expansion and contraction, thereby changing the beam angle of the heating source (4); The synchronous structure (5) is installed between the lampshade (41) and the transmission structure (6); when the height of the lampshade (41) changes, the synchronous structure (5) changes the height of the wafer carrier (14) in the same proportion and in the same direction through the transmission structure (6).

2. The single-chamber fully automatic rapid annealing equipment according to claim 1, characterized in that: The lampshade (41) comprises a fixing part (46) fixed to the furnace body (21); a movable part (43) is slidably arranged on the fixing part (46); a movable ring (44) fixed to the fixing part (46) is slidably arranged inside the movable part (43); a space enclosed by the movable ring (44) and the movable part (43) is a second cavity (45); the first cavity (42) is enclosed by the movable ring (44), the movable part (43) and the fixing part (46); and a horn cover (47) is fixed to the bottom of the movable part (43).

3. The single-chamber fully automatic rapid annealing equipment according to claim 2, characterized in that: The synchronization structure (5) comprises: Lever 1 (51) is rotatably disposed on the lower surface of the top of the furnace body (21), and the lever 1 (51) is connected to the movable member (43) via a slide groove; when the height of the lampshade (41) changes, the lever 1 (51) rotates around the hinge with the furnace body (21), and the height of the outer end changes proportionally; A vertical rod (52) is vertically slidably disposed on the side wall of the furnace body (21), and the top is connected to the lever 1 (51) via a sliding groove; Lever 2 (53) is rotatably disposed on the upper surface of the bottom of the furnace body (21), and the outer end is connected to the vertical rod (52) through a slide groove. The inner end of the lever 2 (53) can drive the movable bracket (25) to rise and fall through the driving structure (7) and the transmission structure (6); when the height of the vertical rod (52) changes, the lever 2 (53) rotates at the hinge with the furnace body (21), and the height of the inner end changes proportionally.

4. The single-chamber fully automatic rapid annealing equipment according to claim 1, characterized in that: The transmission structure (6) comprises: A transmission gear ring (61) is coaxially fixed with the irradiation member (8), and is meshed with a transmission gear (62) arranged to rotate around the axis of the irradiation member (8) on its inner side, a boss (63) is arranged on the top of the transmission gear (62) for axial sliding via a key, a return spring (64) is arranged between the boss (63) and the transmission gear (62), and the boss (63) is assembled with the wafer carrier (14) via a key; A transmission shaft (65) is coaxially rotatably arranged with the irradiation member (8), the transmission shaft (65) drives the boss (63) to rotate via a connecting member, a transmission groove (66) is provided on the bottom side wall of the transmission shaft (65), and the driving structure (7) can press down the boss (63) via the transmission groove (66) and drive it to rotate.

5. The single-chamber fully automatic rapid annealing equipment according to claim 3 is characterized in that: The driving structure (7) comprises a driving motor (71) installed at the bottom of the furnace body (21); the output shaft of the driving motor (71) is slidably connected to a driving shaft (72) via a key; a rotating ring (73) is rotatably arranged on the side wall of the driving shaft (72); the rotating ring (73) is connected to the second lever (53) via a sliding shaft (74); a transmission member (75) is fixedly arranged on the top of the driving shaft (72); the transmission member (75) is pressed down via a transmission groove (66) and drives the driving shaft (65) to rotate.

6. The single-chamber fully automatic rapid annealing equipment according to claim 1, characterized in that: A cover plate (81) is rotatably provided on the top of the irradiation member (8), the cover plate (81) is connected to the transmission shaft (65) via a connecting member, the cover plate (81) is eccentrically provided with a positioning groove (82) matching the wafer carrier (14), the side wall of the positioning groove (82) is connected to a clamping cavity (83), and a clamping member (84) is slidably provided in the clamping cavity (83).

7. The single-chamber fully automatic rapid annealing equipment according to claim 1, characterized in that: The quartz support (24) is fixedly provided with a limiting member (91) for limiting the position of the movable support (25); a clamping member (92) with a U-shaped structure is clamped inside the limiting member (91); and the clamping member (92) is fixedly provided with the movable support (25).

8. The single-chamber fully automatic rapid annealing equipment according to claim 3 is characterized by: A sliding rheostat (16) is installed between the vertical rod (52) and the furnace body (21); a sliding piece and a resistance column of the sliding rheostat (16) are fixed to the vertical rod (52) and the furnace body (21) respectively; the sliding rheostat (16) is electrically connected to the drive motor (71) and is used to adjust the input current of the drive motor (71) and change the rotation speed of the drive motor (71).

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