Nitride structure and semiconductor device

Abstract

The invention provides a nitride structure and a semiconductor device, the characteristics of which are improved. According to one embodiment, a nitride structure includes a laminate. The laminated body comprises a silicon-containing substrate, a first nitride region containing AlN, and a second nitride region containing Alz2Ga1-z2N (0 < = z2lt; 1) of the first nitride region. The first nitride region is provided between the substrate and the second nitride region in a first direction. The laminated body includes a first interface region, and the first interface region includes a first interface between the substrate and the first nitride region. The first interface region includes a first peak position in the first direction. The chlorine concentration distribution along the first direction in the laminate has a chlorine peak at the first peak position.

Description

This application is based on Japanese Patent Application No. 2023-192301 (filing date November 10, 2023) and claims the priority of the Japanese Patent Application No. 2023-192301. The present application incorporates the entire contents of the Japanese Patent Application No. 2023-192301 by reference. Technical Field

[0001] Embodiments of the present invention relate to a nitride structure and a semiconductor device. Background Art

[0002] For example, in semiconductor devices based on nitride structures, improvement in characteristics is expected. Summary of the invention Problems to be solved by the invention

[0004] Embodiments of the present invention provide a nitride structure and a semiconductor device capable of improving characteristics. Means of solving problems

[0005] According to an embodiment of the present invention, a nitride structure includes a stacked body. The stacked body includes: a silicon-containing substrate, a first nitride region containing AlN, and a first nitride region containing AlN. z2 Ga 1-z2 The second nitride region of the laminate is a second nitride region of N (0≤z2<1). The first nitride region is arranged between the substrate and the second nitride region in a first direction. The laminate includes a first interface region, the first interface region includes a first interface between the substrate and the first nitride region, the first interface region includes a first peak position in the first direction, and the chlorine concentration distribution along the first direction in the laminate has a chlorine peak at the first peak position. Effects of the Invention According to the nitride structure having the above-described configuration, a nitride structure and a semiconductor device having improved characteristics can be provided. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 This is a schematic cross-sectional view illustrating the nitride structure according to the first embodiment. Figure 2 This is a diagram illustrating the nitride structure according to the first embodiment. Figure 3 This is a schematic cross-sectional view illustrating the nitride structure according to the first embodiment. Figure 4 This is a diagram illustrating the characteristics of a nitride structure. Figure 5 This is a diagram illustrating the characteristics of a nitride structure. Figure 6 This is a schematic cross-sectional view illustrating a semiconductor device according to a second embodiment. Figure 7This is a schematic cross-sectional view illustrating a semiconductor device according to a second embodiment.

[0099] Description of Reference Numerals 10, 20: 1st and 2nd semiconductor layers, 10M: semiconductor component, 10a-10e: 1st to 5th partial regions, 15: nitride layer, 21, 22: 1st and 2nd semiconductor portions, 41: 1st insulating component, 41p: 1st insulating portion, 51-53: 1st to 3rd electrodes, 60: substrate, 60S: laminate, 61-63: 1st to 3rd nitride regions, 61a, 61b: 1st and 2nd interfaces, 61ar: 1st interface region, 63a, 63b: 1st and 2nd nitride films, 110, 111 : Semiconductor device, 210, 211: Nitride structure, C(C), C2, C3, Cl2, ClpZ1, ClpZ2: concentration, Clpk: Chlorine peak, CpZ1, CpZ2: concentration, Cpk: Carbon peak, D1, D2: 1st, 2nd direction, DD1: Edge dislocation density, Int(Al): Detection intensity, d1, d2: Distance, pZ: Position, p1, p2: 1st, 2nd peak position, pZ1, pZ2: 1st, 2nd position, t1~t3: 1st~3rd thickness, ta, tb: Thickness DETAILED DESCRIPTION

[0007] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the ratio of the size between parts, etc. are not necessarily the same as the actual. Even when representing the same part, it can be represented by different sizes and ratios according to different drawings. In the present specification and drawings, regarding the drawings that have already appeared, the same elements as those described above are denoted by the same reference numerals, and their detailed description is appropriately omitted.

[0008] (First embodiment) Figure 1 This is a schematic cross-sectional view illustrating the nitride structure according to the first embodiment. like Figure 1 As shown, the nitride structure 210 of the embodiment includes a stacked body 60S. The stacked body 60S includes a base 60, a first nitride region 61, and a second nitride region 62.

[0009] The base 60 includes silicon and is, for example, a silicon substrate.

[0010] The first nitride region 61 includes AlN. The first nitride region 61 is, for example, an AlN layer.

[0011] The second nitride region 62 includes Al z2 Ga1-z2 N (0≤z2<1). The second nitride region 62 is an AlGaN layer. The composition ratio z2 is, for example, 0.1 or more and 0.3 or less.

[0012] The first nitride region 61 is provided between the substrate 60 and the second nitride region 62 in the first direction D1. The first direction D1 is set as the Z-axis direction. A direction perpendicular to the Z-axis direction is set as the X-axis direction. A direction perpendicular to both the Z-axis direction and the X-axis direction is set as the Y-axis direction. The substrate 60 is layered along the XY plane. The first nitride region 61 and the second nitride region 62 are layered along the XY plane.

[0013] like Figure 1 As shown, the stacked body 60S may further include a third nitride region 63. The second nitride region 62 is located between the first nitride region 61 and the third nitride region 63. The third nitride region 63 includes, for example, Al, Ga, and N (nitrogen).

[0014] The stacked body 60S includes a first interface 61 a located between the substrate 60 and the first nitride region 61 , and the stacked body 60S includes a first interface region 61 ar including the first interface 61 a .

[0015] Figure 2 This is a diagram illustrating the nitride structure according to the first embodiment. Figure 2 An example of distribution of elements in the stacked body 60S is shown. Figure 2 The results of SIMS (Secondary Ion Mass Spectrometry) analysis of the stacked body 60S are shown. Figure 2 The horizontal axis is the position pZ in the thickness direction. Figure 2 The left vertical axis is the concentration of Cl (chlorine) C(Cl) and the concentration of C (carbon) C(C). Figure 2 The right vertical axis is the detection intensity Int(Al) of Al.

[0016] like Figure 2 As shown, the first interface region 61ar including the first interface 61a includes the first peak position p1. The chlorine concentration distribution along the first direction D1 in the stacked body 60S has a chlorine peak Clpk at the first peak position p1. The first peak position p1 is the position of the first interface 61a or a position near the first interface 61a.

[0017] By making the chlorine concentration have a peak at the first peak position p1, high crystal quality can be obtained. For example, the dislocation density can be reduced. According to the embodiment, a nitride structure having improved characteristics can be provided.

[0018] A high-quality first nitride region 61 can be obtained by providing the first nitride region 61 including AlN on the silicon-containing substrate 60. For example, in the first reference example in which a Ga-containing layer is provided on the silicon-containing substrate 60, Ga reacts with silicon, and it is difficult to obtain a good layer.

[0019] When the first nitride region 61 containing AlN is formed on the silicon-containing substrate 60, nitrogen or nitrogen-containing molecules (such as ammonia) may be attached to the surface of silicon. In this case, nitrogen is combined with silicon, and a thin island-shaped SiN region or the like is sometimes formed. In this case, the crystal quality of the AlN layer thereon is reduced due to the SiN region. For example, the flatness of the surface of the AlN layer is low. Therefore, even in the second nitride region 62 on the first nitride region 61 of AlN, it is difficult to obtain high crystallinity.

[0020] In the embodiment, as described above, the chlorine concentration is locally increased at the first peak position p1 (first interface 61a or its vicinity). As a result, the formation of the SiN region is suppressed. By forming the first nitride region 61 of AlN on the surface where the SiN region is basically not formed, the first nitride region 61 with high surface flatness and high crystal quality is obtained in the first nitride region 61. As a result, high surface flatness and high crystal quality are obtained in the second nitride region 62.

[0021] In one example, the attachment of nitrogen to the silicon surface is sometimes due to the fact that the nitrogen (or nitrogen-containing molecules) remaining on the inner wall surface of the film-forming device is detached from the inner wall surface. In this case, it is effective to clean the interior of the film-forming device with a chlorine-containing gas (such as hydrogen chloride) before forming the first nitride region 61. Thereby, the nitrogen (or nitrogen-containing molecules) remaining on the inner wall surface can be removed. At this time, after cleaning with a chlorine-containing gas, chlorine may remain on the inner wall surface, and the chlorine may adhere to the surface of the silicon. By forming an AlN layer on the silicon surface to which chlorine is attached, the chlorine concentration C (Cl) can be locally increased in the first interface 61a. In the formation of the AlN layer in this case, for example, a raw material gas containing Al can be introduced before introducing other raw material gases. The formation of the SiN region is more effectively suppressed.

[0022] In another example, for example, before forming the AlN layer (first nitride region 61), the silicon-containing substrate 60 may be heat treated in a chlorine-containing atmosphere. Thus, the formation of a SiN region on the surface of the silicon can be suppressed. Thus, a crystalline AlN layer is obtained. High surface flatness is obtained. In such an example, the concentration C (Cl) of chlorine can be locally increased in the first interface 61a.

[0023] like Figure 2 As shown in this example, the chlorine peak Clpk at the first peak position p1 is about 7×10 17 / cm 3 In an embodiment, the chlorine peak Clpk may be, for example, 2×10 17 / cm 3 Above and 2×10 18 / cm 3 the following.

[0024] In the embodiment, it is preferred that the chlorine concentration C (Cl) is locally high at the first interface 61 a and the chlorine concentration C (Cl) is low in other regions (for example, in the AlN layer).

[0025] like Figure 1 As shown, the stacked body 60S includes a second interface 61b between the first nitride region 61 and the second nitride region 62. The first nitride region 61 includes a first position pZ1. The first position pZ1 is located at the center between the first interface 61a and the second interface 61b in the first direction D1. For example, the first position pZ1 is located between the first peak position p1 and the second interface 61b in the first direction D1.

[0026] like Figure 2 As shown, the chlorine concentration ClpZ1 at the first position pZ1 is lower than the chlorine peak Clpk. For example, the concentration ClpZ1 at the first position pZ1 may be 1 / 1000 times or more and 1 / 100 times or less of the chlorine peak Clpk. The chlorine concentration ClpZ1 at the first position pZ1 may be, for example, 1×10 13 / cm 3 Above and 2×10 15 / cm 3 Thus, the chlorine concentration C (Cl) is locally high at the first peak position p1 (the first interface 61 a or its vicinity), and then sharply decreases in the first nitride region 61 .

[0027] As described above, by making the chlorine concentration C (Cl) locally high at the first interface 61a, the formation of the SiN region is effectively suppressed. As a result, high crystal quality is obtained in the first nitride region 61. Furthermore, by making the chlorine concentration C (Cl) sharply reduced in the first nitride region 61, higher crystal quality is obtained in the first nitride region 61.

[0028] like Figure 1As shown, the stacked body 60S may include a second interface 61b between the first nitride region 61 and the second nitride region 62. The substrate 60 includes a second position pZ2. On the other hand, as described above, the first nitride region 61 includes a first position pZ1. The first position pZ1 is located at the center between the first interface 61a and the second interface 61b in the first direction D1. The direction from the second position pZ2 to the first position pZ1 is along the first direction D1. The distance between the second position pZ2 and the first peak position p1 along the first direction D1 is set as distance d2. The distance between the first peak position p1 and the first position pZ1 along the first direction D1 is set as distance d1. The distance d2 is the same as the distance d1.

[0029] like Figure 2 As shown, the chlorine concentration ClpZ1 at the first position pZ1 is lower than the chlorine concentration ClpZ2 at the second position pZ2. Thus, the chlorine concentration C(Cl) can be more sharply reduced in the first nitride region 61 than in the substrate 60. A higher crystal quality can be obtained in the first nitride region 61.

[0030] like Figure 2 As shown in FIG. 1 , the chlorine concentration Cl2 in the second nitride region 62 is lower than the chlorine peak Clpk. The chlorine concentration Cl2 in the second nitride region 62 is, for example, 1×10 15 / cm 3 For example, the chlorine peak value Clpk is 100 to 5000 times the chlorine concentration Cl2 in the second nitride region 62. By lowering the chlorine concentration Cl2, high crystal quality can be obtained in the second nitride region 62.

[0031] like Figure 2 As shown, the first interface region 61ar including the first interface 61a includes the second peak position p2 in the first direction D1. In an embodiment, the carbon concentration distribution along the first direction D1 in the stack 60S may have a carbon peak Cpk at the second peak position p2. The second peak position p2 is the position of the first interface 61a or a position near the first interface 61a. At the first interface 61a (second peak position p2), it is believed that by making the carbon concentration C (C) higher, for example, chlorine is easily and effectively doped into the surface of silicon. Thereby, the formation of the SiN region on the surface of silicon is more effectively suppressed. The second peak position p2 may be substantially the same as the first peak position p1. The distance between the second peak position p2 and the first peak position p1 along the first direction D1 may be less than 20nm. The distance may also be less than 10nm.

[0032] The peak of the carbon concentration C (C) can be caused by, for example, carbon contained in the raw material gas.

[0033] exist Figure 2In the example, the carbon peak Cpk at the second peak position p2 is about 2.5×10 20 / cm 3 In an embodiment, the carbon peak Cpk may be 2×10 20 / cm 3 Above and 3×10 20 / cm 3 the following.

[0034] The carbon concentration C (C) can be sharply reduced in the first nitride region 61. As described above, the stacked body 60S includes the second interface 61b between the first nitride region 61 and the second nitride region 62. The first nitride region 61 includes the first position pZ1. The first position pZ1 is located at the center between the first peak position p1 and the second interface 61b in the first direction D1. The carbon concentration C (C) at the first position pZ1 is not less than 1 / 1000 times and not more than 1 / 100 times the carbon peak value Cpk.

[0035] The carbon concentration C (C) at the first position pZ1 is, for example, 1×10 17 / cm 3 Above and 5×10 17 / cm 3 the following.

[0036] As described above, the substrate 60 includes the second position pZ2. The direction from the second position pZ2 to the first position pZ1 is along the first direction D1. The distance d2 between the second position pZ2 and the first peak position p1 along the first direction D1 is the same as the distance d1 between the first peak position p1 and the first position pZ1 along the first direction D1. The carbon concentration CpZ1 at the first position pZ1 is lower than the carbon concentration CpZ2 at the second position pZ2. In this way, the carbon concentration C (C) can be more sharply reduced in the first nitride region 61 compared with the substrate 60. A higher crystal quality is obtained in the first nitride region 61.

[0037] In the embodiment, the carbon peak value Cpk at the second peak position p2 may be not less than 10 times and not more than 500 times the carbon concentration C2 of the second nitride region 62 .

[0038] The carbon concentration C2 in the second nitride region 62 may be higher than the carbon concentration C(C) in the first nitride region 61 (e.g., carbon concentration CpZ1). For example, in the third nitride region 63 formed on the second nitride region 62, a higher crystal quality is easily obtained. The carbon concentration in the second nitride region 62 may be, for example, 1×10 18 / cm 3 Above and 8×10 18 / cm 3 the following.

[0039] As Figure 2 shown, the carbon concentration in the third nitride region 63 can be higher than the carbon concentration CpZ1 at the first position pZ1.

[0040] In an embodiment, the first thickness t1 of the first nitride region 61 (refer to Figure 1 ) can be, for example, 100 nm or more and 300 nm or less. The second thickness t2 of the second nitride region 62 (refer to Figure 1 ) can be, for example, 100 nm or more and 300 nm or less. These thicknesses are lengths in the first direction D1.

[0041] In an embodiment, the distance between the position of the first interface 61a in the first direction D1 and the first peak position p1 (the position in the first direction D1 where the chlorine peak Clpk is obtained) can be, for example, 1 / 4 or less of the first thickness t1. This distance can be substantially 0. The thickness (the length in the first direction D1) of the first interface region 61ar including the first interface 61a can be, for example, 1 / 4 or less of the first thickness t1.

[0042] Figure 3 is a schematic cross-sectional view illustrating a nitride structure of the first embodiment. As Figure 3 shown, in the nitride structure 211 of the embodiment, the laminate 60S includes a third nitride region 63. The second nitride region 62 is provided between the first nitride region 61 and the third nitride region 63. The third nitride region 63 includes: a plurality of first nitride films 63a containing Al y1 Ga 1-y1 N (0 < y1 ≤ 1) and a plurality of second nitride films 63b containing Al y2 Ga 1-y2 N (0 ≤ y2 < 1, y2 < y1). The configuration of the nitride structure 211 other than this can be the same as the configuration of the nitride structure 210.

[0043] One of the plurality of first nitride films 63a is provided between one of the plurality of second nitride films 63b and another of the plurality of second nitride films 63b in the first direction D1. One of the plurality of second nitride films 63b is provided between one of the plurality of first nitride films 63a and another of the plurality of first nitride films 63a in the first direction D1. The third nitride region 63 is, for example, a superlattice layer. Through the third nitride region 63, for example, it is easy to obtain high crystal quality. For example, dislocations are suppressed. For example, stress is relieved.

[0044] As for Figure 2As described above, in the nitride structure 211, the carbon concentration C3 in the third nitride region 63 can be higher than the carbon concentration CpZ1 at the first position pZ1. Thus, in the nitride region (or nitride semiconductor layer, etc.) provided on the third nitride region 63, high crystal quality can be easily obtained.

[0045] like Figure 3 As shown, the semiconductor component 10M may be provided on the third nitride region 63. The semiconductor component 10M may include, for example, a GaN layer, etc. The first nitride region 61, the second nitride region 62, and the third nitride region 63 function as a buffer layer.

[0046] The thickness ta of one of the plurality of first nitride films 63a may be, for example, not less than 3 nm and not more than 7 nm. The thickness tb of one of the plurality of second nitride films 63b may be, for example, not less than 20 nm and not more than 30 nm. The third thickness t3 of the third nitride region 63 may be, for example, not less than 3500 nm and not more than 4000 nm. These thicknesses are lengths in the first direction D1.

[0047] Next, an example of the experimental results of the nitride structure is described. In the experimental sample, the semiconductor component 10M (GaN layer) is provided on the third nitride region 63. In the experiment, the pre-processing conditions of the film forming apparatus, the processing conditions of the substrate 60, and the formation conditions of the first nitride region 61 are changed. In the experiment, the crystal quality such as the dislocation density in the semiconductor component 10M is evaluated.

[0048] Figure 4 This is a diagram illustrating the characteristics of a nitride structure. Figure 4 The horizontal axis is the chlorine peak value Clpk at the first peak position p1, and the vertical axis is the edge dislocation density DD1.

[0049] like Figure 4 As shown, when the chlorine peak Clpk is 2×10 17 / cm 3 Above and 2×10 18 / cm 3 When the chlorine peak value Clpk is less than 2×10 17 / cm 3 Above and 2×10 18 / cm 3 the following.

[0050] When the chlorine peak Clpk is less than 2×10 17 / cm 3 When , the edge dislocation density DD1 is high. If the chlorine peak Clpk is too low, it is considered that, for example, the formation of the SiN region on the surface of silicon cannot be sufficiently suppressed.

[0051] When the chlorine peak Clpk is greater than 2×10 18 / cm 3 When the edge dislocation density DD1 is high. If the chlorine peak Clpk is too high, it is considered that, for example, the chlorine concentration C(Cl) is difficult to be sufficiently sharply reduced. As a result, the chlorine concentration C(Cl) in the first nitride region 61 is difficult to be sufficiently reduced. As a result, it is considered that the crystal quality becomes insufficient.

[0052] Figure 5 This is a diagram illustrating the characteristics of a nitride structure. Figure 5 The horizontal axis is the carbon peak Cpk at the second peak position p2, and the vertical axis is the edge dislocation density DD1.

[0053] like Figure 5 As shown, when the carbon peak Cpk is 2×10 20 / cm 3 Above and 3×10 20 / cm 3 When the carbon peak value Cpk is less than 2×10 20 / cm 3 Above and 3×10 20 / cm 3 the following.

[0054] When the carbon peak Cpk is less than 2×10 20 / cm 3 When , the edge dislocation density DD1 is high. If the carbon peak Cpk is too low, it is considered that the crystal quality in the first nitride region 61 is likely to become insufficient.

[0055] When the carbon peak Cpk is greater than 3×10 20 / cm 3 When , the edge dislocation density DD1 is high. If the carbon peak Cpk is too high, it is considered that the crystal quality in the first nitride region 61 is likely to become insufficient.

[0056] (Second embodiment) Figure 6 This is a schematic cross-sectional view illustrating a semiconductor device according to a second embodiment. like Figure 6 As shown, the semiconductor device 110 of the embodiment includes the nitride structure of the first embodiment, the semiconductor component 10M, the first electrode 51, the second electrode 52, and the third electrode 53. In the semiconductor device 110, the nitride structure of the first embodiment may be, for example, the nitride structure 210 or the nitride structure 211. The case where the semiconductor device 110 includes the nitride structure 210 is described.

[0057] The semiconductor component 10M includes an Al-containing x1 Ga 1-x1 The first semiconductor layer 10 containing N (0≤x1<1) and Al x2 Ga 1-x2 The second semiconductor layer 20 is N (0<x2≤1, x1<x2). The composition ratio x1 is, for example, 0 or more and 0.15 or less. The first semiconductor layer 10 can be, for example, a GaN layer. The composition ratio x2 is, for example, greater than 0.15 and less than 0.3. The second semiconductor layer 20 can be, for example, an AlGaN layer.

[0058] The first semiconductor layer 10 is provided between the stacked body 60S and the second semiconductor layer 20. Figure 6 As shown, the semiconductor component 10M may further include a nitride layer 15. The nitride layer 15 is, for example, a GaN layer. The carbon concentration in the nitride layer 15 is higher than the carbon concentration in the first semiconductor layer 10. The nitride layer 15 may be provided or omitted as required.

[0059] The second direction D2 from the first electrode 51 to the second electrode 52 intersects the first direction D1. The second direction D2 may be, for example, the X-axis direction. The position of the third electrode 53 in the second direction D2 is located between the position of the first electrode 51 in the second direction D2 and the position of the second electrode 52 in the second direction D2.

[0060] The second semiconductor layer 20 includes a first semiconductor portion 21 and a second semiconductor portion 22. The direction from the first semiconductor portion 21 to the second semiconductor portion 22 is along the second direction D2. The first electrode 51 is electrically connected to the first semiconductor portion 21. The second electrode 52 is electrically connected to the second semiconductor portion 22.

[0061] The current flowing between the first electrode 51 and the second electrode 52 is controlled by the potential of the third electrode 53. The potential of the third electrode 53 may be, for example, a potential based on the potential of the first electrode 51. The first electrode 51 functions as a source electrode, for example. The second electrode 52 functions as a drain electrode. The third electrode 53 functions as a gate electrode. The semiconductor device 110 is, for example, a transistor.

[0062] The first semiconductor layer 10 includes a region facing the second semiconductor layer 20. A carrier region is formed in this region. The carrier region is, for example, a two-dimensional electron gas. The semiconductor device 110 is, for example, a HEMT (High Electron Mobility Transistor).

[0063] The semiconductor device 110 includes the stacked body 60S of the nitride structure 210 of the first embodiment. In the semiconductor device 110, good crystallinity is obtained. For example, a low edge dislocation density DD1 is obtained.

[0064] like Figure 6 As shown, in this example, at least a portion of the third electrode 53 is provided between the first semiconductor portion 21 and the second semiconductor portion 22 in the second direction D2. The third electrode 53 is, for example, a recessed gate electrode.

[0065] For example, the first semiconductor layer 10 includes a first partial region 10a, a second partial region 10b, a third partial region 10c, a fourth partial region 10d, and a fifth partial region 10e. The direction from the first partial region 10a to the first electrode 51 is along the first direction D1. The direction from the second partial region 10b to the second electrode 52 is along the first direction D1. The direction from the third partial region 10c to the third electrode 53 is along the first direction D1.

[0066] The position of the fourth partial region 10d in the second direction D2 is between the position of the first partial region 10a in the second direction D2 and the position of the third partial region 10c in the second direction D2. The position of the fifth partial region 10e in the second direction D2 is between the position of the third partial region 10c in the second direction D2 and the position of the second partial region 10b in the second direction D2.

[0067] The direction from the fourth partial region 10d to the first semiconductor portion 21 is along the first direction D1. The direction from the fifth partial region 10e to the second semiconductor portion 22 is along the first direction D1. In this example, a portion of the third electrode 53 is located between the fourth partial region 10d and the fifth partial region 10e in the second direction D2. A high threshold voltage is obtained. For example, a normally-off operation is obtained.

[0068] like Figure 6 As shown, the semiconductor device 110 may further include a first insulating member 41. The first insulating member 41 includes a first insulating portion 41p. The first insulating portion 41p is provided between the third electrode 53 and the semiconductor component 10M. The first insulating portion 41p functions as a gate insulating film, for example.

[0069] Figure 7 This is a schematic cross-sectional view illustrating a semiconductor device according to a second embodiment. like Figure 7As shown, the semiconductor device 111 of the embodiment includes the nitride structure of the first embodiment, the semiconductor component 10M, the first electrode 51, the second electrode 52, and the third electrode 53. In the semiconductor device 111, the third electrode 53 does not overlap with the second semiconductor layer 20 in the second direction D2. The configuration of the semiconductor device 111 other than this can be the same as that of the semiconductor device 110.

[0070] In the semiconductor device 111, for example, a normally-off operation is obtained. In the semiconductor device 111, the first insulating member 41 can be omitted. For example, the semiconductor device 111 can be used as a high-frequency switching element.

[0071] In an embodiment, information about the shape of the nitride region can be obtained, for example, through an electron microscope image. Information about the composition and element concentration in the nitride region can be obtained, for example, through EDX (Energy Dispersive X-ray Spectroscopy) or SIMS (Secondary Ion Mass Spectrometry). Information about the composition in the nitride region can also be obtained, for example, through reciprocal lattice space mapping. The first interface 61a can be determined based on information such as an electron microscope image, EDX or SIMS.

[0072] The implementation method may include the following technical solutions. (Technical Solution 1) A nitride structure comprising a stacked body, The laminate comprises: Silicon-containing matrix A first nitride region including AlN, and Contains Al z2 Ga 1-z2 The second nitride region N (0≤z2<1), in, The first nitride region is provided between the substrate and the second nitride region in a first direction, The stacked body includes a first interface region, wherein the first interface region includes a first interface between the substrate and the first nitride region. The first interface region includes a first peak position in the first direction, The chlorine concentration distribution along the first direction in the stacked body has a chlorine peak at the first peak position.

[0073] (Technical Solution 2) According to the nitride structure of technical solution 1, the chlorine peak is 2×10 17 / cm 3Above and 2×10 18 / cm 3 the following.

[0074] (Technical Solution 3) The nitride structure according to claim 1 or 2, wherein the chlorine peak is not less than 100 times and not more than 5000 times the chlorine concentration in the second nitride region.

[0075] (Technical Solution 4) The nitride structure according to claim 1 or 2, wherein the chlorine concentration in the second nitride region is 1×10 15 / cm 3 the following.

[0076] (Technical Solution 5) The nitride structure according to any one of claims 1 to 4, wherein The stacked body includes a second interface between the first nitride region and the second nitride region, The first nitride region includes a first position, The first position is the center between the first interface and the second interface in the first direction, The chlorine concentration at the first position is not less than 1 / 1000 times and not more than 1 / 100 times the chlorine peak value.

[0077] (Technical Solution 6) According to the nitride structure of technical solution 5, the concentration of chlorine at the first position is 1×10 14 / cm 3 Above and 2×10 15 / cm 3 the following.

[0078] (Technical Solution 7) The nitride structure according to any one of claims 1 to 4, wherein The stacked body includes a second interface between the first nitride region and the second nitride region, The first nitride region includes a first position, The first position is the center between the first interface and the second interface in the first direction, The base body includes a second position, The direction from the second position to the first position is along the first direction, The distance between the second position and the first peak position along the first direction is the same as the distance between the first peak position and the first position along the first direction, The chlorine concentration at the first position is lower than the chlorine concentration at the second position.

[0079] (Technical Solution 8) The nitride structure according to any one of claims 1 to 4, wherein The first interface region includes a second peak position in the first direction, The carbon concentration distribution along the first direction in the stacked body has a carbon peak at the second peak position.

[0080] (Technical Solution 9) According to the nitride structure of technical solution 8, the carbon peak is 2×10 20 / cm 3 Above and 3×10 20 / cm 3 the following.

[0081] (Technical Solution 10) The nitride structure according to claim 8 or 9, wherein the carbon peak is not less than 10 times and not more than 500 times the carbon concentration in the second nitride region.

[0082] (Technical Solution 11) The nitride structure according to claim 8 or 9, wherein the carbon concentration in the second nitride region is 1×10 18 / cm 3 Above and 8×10 18 / cm 3 the following.

[0083] (Technical Solution 12) The nitride structure according to any one of technical solutions 8 to 11, wherein The stacked body includes a second interface between the first nitride region and the second nitride region, The first nitride region includes a first position, The first position is the center between the first interface and the second interface in the first direction, The carbon concentration at the first position is not less than 1 / 1000 times and not more than 1 / 100 times the carbon peak value.

[0084] (Technical Solution 13) According to the nitride structure of technical solution 12, the carbon concentration at the first position is 1×10 17 / cm 3 Above and 5×10 17 / cm 3 the following.

[0085] (Technical solution 14) The nitride structure according to any one of Technical solutions 8 to 11, wherein The laminate includes a second interface between the first nitride region and the second nitride region, The first nitride region includes a first position, The first position is the center between the first interface and the second interface in the first direction, The substrate includes a second position, The direction from the second position to the first position is along the first direction, The distance along the first direction between the second position and the first peak position is the same as the distance along the first direction between the first peak position and the first position, The carbon concentration at the first position is lower than the carbon concentration at the second position.

[0086] (Technical solution 15) The nitride structure according to Technical solution 8 or 9, wherein the carbon concentration in the second nitride region is higher than the carbon concentration in the first nitride region.

[0087] (Technical solution 16) The nitride structure according to Technical solution 12 or 13, wherein The laminate further includes a third nitride region, The second nitride region is located between the first nitride region and the third nitride region, The third nitride region includes: Containing Al y1 Ga 1-y1 N (0 < y1 ≤ 1) of a plurality of first nitride films, Containing Al y2 Ga 1-y2 N (0 ≤ y2 < 1, y2 < y1) of a plurality of second nitride films, One of the plurality of first nitride films is located between one of the plurality of second nitride films and the other of the plurality of second nitride films in the first direction, One of the plurality of second nitride films is located between one of the plurality of first nitride films and the other of the plurality of first nitride films in the first direction.,

[0088] (Technical solution 17) The nitride structure according to Technical solution 16, wherein the carbon concentration in the third nitride region is higher than the concentration of carbon at the first position.

[0089] (Technical Solution 18) A semiconductor device comprising: The nitride structure according to any one of claims 1 to 17, Semiconductor components, The first electrode, The second electrode, and The third electrode, Wherein, the semiconductor component comprises: Contains Al x1 Ga 1-x1 N (0≤x1<1) first semiconductor layer, and Contains Al x2 Ga 1-x2 N (0<x2≤1, x1<x2) second semiconductor layer, wherein the first semiconductor layer is disposed between the stacked body and the second semiconductor layer, A second direction from the first electrode to the second electrode intersects the first direction, The position of the third electrode in the second direction is between the position of the first electrode in the second direction and the position of the second electrode in the second direction. The second semiconductor layer includes a first semiconductor portion and a second semiconductor portion, A direction from the first semiconductor portion to the second semiconductor portion is along the second direction, The first electrode is electrically connected to the first semiconductor portion, The second electrode is electrically connected to the second semiconductor portion.

[0090] (Technical Solution 19) The semiconductor device according to claim 18 further comprises a first insulating member including a first insulating portion. The first insulating portion is provided between the third electrode and the semiconductor component.

[0091] (Technical Solution 20) The semiconductor device according to claim 18 or 19, wherein at least a portion of the third electrode is provided between the first semiconductor portion and the second semiconductor portion in the second direction.

[0092] According to the embodiment, a nitride structure and a semiconductor device capable of improving characteristics can be provided.

[0093] In the specification of the present application, the term "electrically connected state" includes a state where a plurality of conductors are physically connected and current flows between the plurality of conductors. The term "electrically connected state" includes a state where another conductor is inserted between the plurality of conductors and current flows between the plurality of conductors.

[0094] The embodiments of the present invention are described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, as long as a person skilled in the art can implement the present invention in the same manner and obtain the same effect by appropriately selecting from the known range, the specific configuration of each element such as the nitride region and the substrate contained in the nitride structure is included in the scope of the present invention.

[0095] Furthermore, elements obtained by combining any two or more elements in each specific example within a technically possible range are included in the scope of the present invention as long as they include the gist of the present invention.

[0096] In addition, as an embodiment of the present invention, all nitride structures and semiconductor devices that can be implemented by those skilled in the art with appropriate design changes based on the above-mentioned nitride structures and semiconductor devices also belong to the scope of the present invention as long as they include the gist of the present invention.

[0097] Furthermore, within the scope of the concept of the present invention, a person skilled in the art can conceive of various changes and modifications, and these changes and modifications are also understood to belong to the scope of the present invention.

[0098] Although several embodiments of the present invention are described here, these embodiments are only provided as examples and are not intended to limit the scope of the present invention. These new embodiments can be implemented in various other ways, and various omissions, substitutions, changes, etc. can be made without departing from the scope of the present invention. These embodiments and their variations are included in the scope and spirit of the present invention, and are also included in the invention recorded in the claims and their equivalents.

Claims

1. A nitride structure comprising a stacked body, The laminate comprises: Silicon-containing matrix, a first nitride region comprising AlN, and The second nitride region contains Al z2 Ga 1-z2 N, where 0≤z2<1; wherein the first nitride region is disposed between the substrate and the second nitride region in the first direction, The stacked body includes a first interface region, wherein the first interface region includes a first interface between the substrate and the first nitride region. The first interface region includes a first peak position in the first direction, The chlorine concentration distribution along the first direction in the stacked body has a chlorine peak at the first peak position.

2. The nitride structure according to claim 1, wherein The chlorine peak is 2×10 17 / cm 3 Above and 2×10 18 / cm 3 the following.

3. The nitride structure according to claim 1, wherein The stacked body includes a second interface between the first nitride region and the second nitride region, The first nitride region includes a first position, The first position is the center between the first interface and the second interface in the first direction, The chlorine concentration at the first position is not less than 1 / 1000 times and not more than 1 / 100 times the chlorine peak value.

4. The nitride structure according to claim 3, wherein The concentration of chlorine at the first position is 1×10 14 / cm 3 Above and 2×10 15 / cm 3 the following.

5. The nitride structure according to claim 1, wherein The stacked body includes a second interface between the first nitride region and the second nitride region, The first nitride region includes a first position, The first position is the center between the first interface and the second interface in the first direction, The base body includes a second position, The direction from the second position to the first position is along the first direction, The distance between the second position and the first peak position along the first direction is the same as the distance between the first peak position and the first position along the first direction, The concentration of chlorine at the first position is lower than the concentration of chlorine at the second position.

6. The nitride structure according to claim 1, wherein The first interface region includes a second peak position in the first direction, The carbon concentration distribution along the first direction in the stacked body has a carbon peak at the second peak position.

7. The nitride structure according to claim 6, wherein The carbon peak is 2×10 20 / cm 3 Above and 3×10 20 / cm 3 the following.

8. The nitride structure according to claim 6, wherein The stacked body includes a second interface between the first nitride region and the second nitride region, The first nitride region includes a first position, The first position is the center between the first interface and the second interface in the first direction, The carbon concentration at the first position is not less than 1 / 1000 times and not more than 1 / 100 times the carbon peak value.

9. The nitride structure according to claim 6, wherein The stacked body includes a second interface between the first nitride region and the second nitride region, The first nitride region includes a first position, The first position is the center between the first interface and the second interface in the first direction, The base body includes a second position, The direction from the second position to the first position is along the first direction, The distance between the second position and the first peak position along the first direction is the same as the distance between the first peak position and the first position along the first direction, The carbon concentration at the first position is lower than the carbon concentration at the second position.

10. A semiconductor device comprising: The nitride structure according to claim 1, Semiconductor components, The first electrode, The second electrode, and The third electrode; in, The semiconductor component comprises: The first semiconductor layer contains Al x1 Ga 1-x1 N, where 0≤x1<1, and The second semiconductor layer contains Al x2 Ga 1-x2 N, where 0<x2≤1, x1<x2; wherein the first semiconductor layer is disposed between the stacked body and the second semiconductor layer, A second direction from the first electrode to the second electrode intersects the first direction, and a position of the third electrode in the second direction is located between a position of the first electrode in the second direction and a position of the second electrode in the second direction. The second semiconductor layer includes a first semiconductor portion and a second semiconductor portion, A direction from the first semiconductor portion to the second semiconductor portion is along the second direction, The first electrode is electrically connected to the first semiconductor portion, The second electrode is electrically connected to the second semiconductor portion.

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