High-speed detector structure with metasurface structure and preparation method

Abstract

The invention discloses a high-speed detector structure with a metasurface structure and a preparation method. The high-speed detector structure with the metasurface structure comprises a substrate layer, an optical absorption layer, a doping layer, a first deposition dielectric layer, a metal electrode, a second deposition dielectric layer and the metasurface structure. An optical absorption layer is arranged in the middle of the upper surface of the substrate layer, first deposition dielectric layers are arranged on the two sides of the optical absorption layer, metal electrodes are arranged in the first deposition dielectric layers located on the two sides of the optical absorption layer, a doping layer is arranged on the upper surface of the optical absorption layer, and a second deposition dielectric layer is arranged on the doping layer. First deposition dielectric layers are fixedly arranged on the two sides of the doping layer, a metal electrode is arranged in the first deposition dielectric layer located on the upper side of the doping layer, a second deposition dielectric layer is arranged on the upper surface of the first deposition dielectric layer, and a metasurface structure is arranged in the middle of the upper surface of the second deposition dielectric layer. The device has the advantages of small size, good uniformity and high stability.

Description

Technical Field

[0001] The present invention relates to the technical field of high-speed detector structure and preparation, and in particular to a high-speed detector structure with a super surface structure and a preparation method thereof. Background Art

[0002] The bandwidth of a high-speed PIN detector is inversely proportional to the product of the junction capacitance (C). In order to obtain a high-speed detector, the junction capacitance of the device must be small. For example, a circular table detector with a 3dB bandwidth of 30GHz has a table diameter between 15 and 20 microns. If a larger bandwidth is to be obtained, the table of the detector must be less than 10 microns, which makes it difficult to couple with optical fibers and is difficult to use in actual production applications.

[0003] The traditional solution is to make a microlens on the light incident surface of the detector to focus the large light spot of the optical fiber to the light incident surface of the detector to improve the light coupling efficiency. However, detectors using microlenses have the disadvantages of large size, poor uniformity and poor stability.

[0004] The present application provides a high-speed detector structure with a supersurface structure and a preparation method to solve the above-mentioned problems. Summary of the invention

[0005] The technical problem to be solved by the present invention is that the traditional solution is to make a microlens on the light incident surface of the detector to focus the large light spot of the optical fiber to the light incident surface of the detector to improve the light coupling efficiency. However, the detector using the microlens has the disadvantages of large size, poor uniformity and poor stability. Therefore, a high-speed detector structure with a metasurface structure and a preparation method are provided. The high-speed detector structure with a metasurface structure includes: A substrate layer, an optical absorption layer, a doping layer, a first deposited medium layer, a metal electrode, a second deposited medium layer and a super surface structure; an optical absorption layer is arranged in the middle of the upper surface of the substrate layer, first deposited medium layers are arranged on both sides of the optical absorption layer, metal electrodes are arranged in the first deposited medium layers on both sides of the optical absorption layer, a doping layer is arranged on the upper surface of the optical absorption layer, first deposited medium layers are fixedly arranged on both sides of the doping layer, metal electrodes are arranged in the first deposited medium layer on the upper side of the doping layer, a second deposited medium layer is arranged on the upper surface of the first deposited medium layer, and a super surface structure is arranged in the middle of the upper surface of the second deposited medium layer.

[0006] Furthermore, the substrate material is silicon or silicon on an insulating layer, and the substrate material is n-type or p-type doped, with a doping concentration of 1×10 17 cm -3 and 1×10 20 cm -3 between.

[0007] Furthermore, the optical absorption layer is made of germanium or germanium-tin material, and the doping layer on the optical absorption layer can be n-type or p-type doped accordingly, with a doping concentration of 1×10 17 cm -3 and 1×10 20 cm -3 between.

[0008] Furthermore, the first deposited dielectric layer is silicon nitride, and the second deposited dielectric layer is silicon oxide.

[0009] Furthermore, the thickness of the second deposition medium layer is greater than or equal to 4 micrometers.

[0010] On the other hand, the present invention also provides a method for preparing a high-speed detector structure having a supersurface structure, comprising: manufacturing a substrate, and growing an optical absorption layer and a doping layer on the substrate by using a chemical vapor deposition technique; Sequentially process both sides of the optical absorption layer and the doping layer to the substrate layer using photolithography and etching techniques; Depositing a first deposited dielectric layer, opening metal holes on the first deposited dielectric layer, and making metal electrodes at the metal holes by photolithography and etching techniques; depositing a second deposited dielectric layer, and polishing a top portion of the second deposited dielectric layer; depositing a third dielectric layer, and fabricating a metasurface structure by photolithography and etching; Open the metal holes for the electrodes to complete the production of the metasurface detector.

[0011] Further, the method of sequentially processing both sides of the optical absorption layer and the doping layer to the substrate layer by using photolithography and etching technology includes: Using photolithography technology to form an etching pattern on the doped layer, using etching protection glue to protect the part that does not need to be etched, etching the doped layer directly to the optical absorption layer by etching technology, and cleaning the etching protection glue; The photolithography technology is used to form an etching pattern on the exposed optical absorption layer, and the etching protection glue is used to protect the part that does not need to be etched. The optical absorption layer is etched to the substrate through the etching technology, and the etching protection glue is cleaned.

[0012] Furthermore, the step of depositing a first deposited dielectric layer, opening a metal hole on the first deposited dielectric layer, and making a metal electrode at the metal hole by photolithography and etching technology comprises: Depositing a first deposited dielectric layer to the top of the doped layer, forming an etching pattern on the doped layer using photolithography, protecting the portion that does not need to be etched using an etching protective glue, etching the deposited layers on both sides of the doped layer and the optical absorption layer using an etching technology, and cleaning the etching protective glue after completion; A pattern of metal holes is formed on the top of the first deposited dielectric layer on both sides of the optical absorption layer by photolithography technology, and the parts that do not need to be etched are protected by etching protection glue, and the metal holes are etched by etching technology. After completion, the etching protection glue is cleaned; The metal sample is transferred into the electron beam evaporation furnace, and the metal film is deposited by electron beam evaporation technology. Then, the shape of the metal electrode is obtained through photolithography and etching technology, and the metal electrode is placed in the metal hole; A pattern of metal holes is formed on the top of the first deposited dielectric layer on the top of the doped layer by photolithography technology, and an etching protective glue is used to protect the part that does not need to be etched. The metal holes are etched by etching technology, and the etching protective glue is cleaned after completion; The metal sample is transferred into the electron beam evaporation furnace, and the metal film is deposited by electron beam evaporation technology. Then, the shape of the metal electrode is obtained through photolithography and etching technology, and the metal electrode is placed in the metal hole.

[0013] Furthermore, the step of depositing the third dielectric layer, preparing a super surface structure by photolithography and etching, and opening electrode metal holes to complete the production of the super surface detector specifically includes: Deposit the third dielectric layer and use polishing technology to obtain a flat surface. Use photolithography and etching methods to prepare the metasurface structure; open electrode metal holes to complete the production of the metasurface detector. The implementation of the present invention has the following beneficial effects: 1. The present invention provides a high-speed detector structure with a metasurface structure and a preparation method thereof. Compared with traditional lenses, the metasurface structure has the advantages of small size, good uniformity and high stability, and is very suitable for use in optical communications. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a structural schematic diagram of the present invention; Figure 2 It is a flow chart of the present invention. DETAILED DESCRIPTION

[0015] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention. Example

[0016] Please refer to the instruction manual Figure 1-2 This embodiment provides a high-speed detector structure with a super surface structure and a preparation method thereof. The high-speed detector structure with a super surface structure includes: A substrate layer 1, an optical absorption layer 2, a doping layer 3, a first deposited medium layer 4, a metal electrode 5, a second deposited medium layer 6 and a super surface structure 7; an optical absorption layer 2 is arranged in the middle of the upper surface of the substrate layer 1, the first deposited medium layer 4 is arranged on both sides of the optical absorption layer 2, the metal electrode 5 is arranged in the first deposited medium layer 4 located on both sides of the optical absorption layer 2, the doping layer 3 is arranged on the upper surface of the optical absorption layer 2, the first deposited medium layer 4 is fixedly arranged on both sides of the doping layer 3, the metal electrode 5 is arranged in the first deposited medium layer 4 located on the upper side of the doping layer 3, the second deposited medium layer 6 is arranged on the upper surface of the first deposited medium layer 4, and the super surface structure 7 is arranged in the middle position of the upper surface of the second deposited medium layer 6.

[0017] The first deposited medium layer 4 located on both sides of the doping layer 3 also covers part of the side surfaces of the optical absorption layer 2 .

[0018] The substrate material is silicon or silicon on an insulating layer, and the substrate material is n-type or p-type doped, with a doping concentration of 1×10 17 cm -3 and 1×10 20 cm -3 between.

[0019] The optical absorption layer is made of germanium or germanium-tin material. The doping layer on the optical absorption layer can be n-type or p-type doped accordingly, with a doping concentration of 1×10 17 cm -3 and 1×10 20 cm -3 between.

[0020] The first deposited dielectric layer 4 is silicon nitride, and the second deposited dielectric layer 6 is silicon oxide.

[0021] The thickness of the second deposited medium layer 6 is greater than or equal to 4 micrometers.

[0022] On the other hand, the present application provides a method for preparing a high-speed detector structure having a metasurface structure 7, comprising: A substrate 1 is manufactured, and an optical absorption layer 2 and a doping layer 3 are grown on the substrate 1 by using a chemical vapor deposition technique; The optical absorption layer 2 and the two sides of the doping layer 3 are processed to the substrate layer 1 in sequence by using photolithography and etching technology; Depositing a first deposited dielectric layer 4, opening a metal hole in the first deposited dielectric layer 4, and manufacturing a metal electrode 5 at the metal hole by photolithography and etching technology; Depositing a second deposited dielectric layer 6, and polishing the top of the second deposited dielectric layer 6; Depositing a third dielectric layer, and fabricating a super surface structure 7 by photolithography and etching methods; Open the electrode metal holes to complete the production of the metasurface detector.

[0023] Using photolithography and etching techniques to sequentially process both sides of the optical absorption layer 2 and the doping layer 3 to the substrate layer 1 includes: Using photolithography technology to form an etching pattern on the doped layer 3, using etching protection glue to protect the part that does not need to be etched, etching the doped layer 3 directly to the optical absorption layer 2 by etching technology, and cleaning the etching protection glue; The photolithography technique is used to form an etching pattern on the exposed optical absorption layer 2, and the portion not to be etched is protected by an etching protective glue. The optical absorption layer 2 is etched to the substrate 1 by the etching technique, and the etching protective glue is cleaned.

[0024] Depositing a first deposited dielectric layer 4, opening a metal hole on the first deposited dielectric layer 4, and making a metal electrode 5 at the metal hole by photolithography and etching technology includes: Deposit the first deposited dielectric layer 4 to the top of the doped layer 3, use photolithography to form an etching pattern on the doped layer 3, use etching protection glue to protect the part that does not need to be etched, and etch the deposited layers on both sides of the doped layer 3 and the optical absorption layer 2 by etching technology, and then clean the etching protection glue after completion; A pattern of metal holes is formed on the top of the first deposited dielectric layer 4 on both sides of the optical absorption layer 2 by photolithography technology, and the parts that do not need to be etched are protected by etching protection glue, and the metal holes are etched by etching technology. After completion, the etching protection glue is cleaned; The metal sample is transferred into the electron beam evaporation furnace, and the metal film is deposited by electron beam evaporation technology. Then, the shape of the metal electrode 5 is obtained by photolithography and etching technology, and the metal electrode 5 is placed in the metal hole; A metal hole pattern is formed on the top of the first deposited dielectric layer 4 on the top of the doped layer 3 by photolithography technology, and an etching protective glue is used to protect the part that does not need to be etched. The metal hole is etched by etching technology, and the etching protective glue is cleaned after completion; The metal sample is transferred into an electron beam evaporation furnace, and a metal film is deposited by electron beam evaporation technology. Then, the shape of the metal electrode 5 is obtained by photolithography and etching technology, and the metal electrode 5 is placed in the metal hole.

[0025] Depositing the third dielectric layer, using photolithography and etching methods to prepare the metasurface structure; opening electrode metal holes, and completing the production of the metasurface detector specifically include: The third dielectric layer is deposited, and a smooth surface is obtained by polishing technology. The metasurface structure is prepared by photolithography and etching methods. Electrode metal holes are opened to complete the production of the metasurface detector.

[0026] In the description of the present invention, it is necessary to understand that the terms "coaxial", "bottom", "one end", "top", "middle", "the other end", "upper", "one side", "top", "inside", "front", "center", "both ends" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0027] In the present invention, unless otherwise clearly stipulated and limited, the terms such as "installation", "setting", "connection", "fixation" and "screw-on" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral one; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be the internal connection of two elements or the interaction relationship between two elements. Unless otherwise clearly defined, ordinary technicians in this field can understand the specific meanings of the above terms in the present invention according to the specific circumstances.

[0028] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A high-speed detector structure with a metasurface structure, characterized in that: It includes a substrate layer, an optical absorption layer, a doping layer, a first deposited medium layer, a metal electrode, a second deposited medium layer and a super surface structure; the optical absorption layer is arranged in the middle of the upper surface of the substrate layer, the first deposited medium layer is arranged on both sides of the optical absorption layer, the metal electrodes are arranged in the first deposited medium layer on both sides of the optical absorption layer, the doping layer is arranged on the upper surface of the optical absorption layer, the first deposited medium layer is fixedly arranged on both sides of the doping layer, the metal electrode is arranged in the first deposited medium layer on the upper side of the doping layer, the second deposited medium layer is arranged on the upper surface of the first deposited medium layer, and the super surface structure is arranged in the middle position of the upper surface of the second deposited medium layer.

2. The high-speed detector structure with a super-surface structure according to claim 1, characterized in that: The substrate material is silicon or silicon on an insulating layer, and the substrate material is n-type or p-type doped, with a doping concentration of 1×10 17 cm -3 and 1×10 20 cm -3 between.

3. The high-speed detector structure with a super-surface structure according to claim 2, characterized in that: The optical absorption layer is made of germanium or germanium-tin material. The doping layer on the optical absorption layer can be n-type or p-type doped accordingly, with a doping concentration of 1×10 17 cm -3 and 1×10 20 cm -3 between.

4. The high-speed detector structure with a super-surface structure according to claim 3, characterized in that: The first deposited dielectric layer is silicon nitride, and the second deposited dielectric layer is silicon oxide.

5. The high-speed detector structure with a super-surface structure according to claim 4, characterized in that: The thickness of the second deposited medium layer is greater than or equal to 4 microns.

6. A method for preparing a high-speed detector structure having a supersurface structure, characterized in that: include: manufacturing a substrate, and growing an optical absorption layer and a doping layer on the substrate by using a chemical vapor deposition technique; Sequentially process both sides of the optical absorption layer and the doping layer to the substrate layer using photolithography and etching techniques; Depositing a first deposited dielectric layer, opening metal holes on the first deposited dielectric layer, and making metal electrodes at the metal holes by photolithography and etching techniques; depositing a second deposited dielectric layer, and polishing a top portion of the second deposited dielectric layer; depositing a third dielectric layer, and fabricating a metasurface structure by photolithography and etching; Open the metal holes for the electrodes to complete the production of the metasurface detector.

7. The high-speed detector structure with a super-surface structure according to claim 6, characterized in that: The method of sequentially processing both sides of the optical absorption layer and the doping layer to the substrate layer by using photolithography and etching technology comprises: Using photolithography technology to form an etching pattern on the doped layer, using etching protection glue to protect the part that does not need to be etched, etching the doped layer directly to the optical absorption layer by etching technology, and cleaning the etching protection glue; The photolithography technology is used to form an etching pattern on the exposed optical absorption layer, and the etching protection glue is used to protect the part that does not need to be etched. The optical absorption layer is etched to the substrate through the etching technology, and the etching protection glue is cleaned.

8. The high-speed detector structure with a super-surface structure according to claim 7, characterized in that: The depositing of the first deposited dielectric layer, opening metal holes in the first deposited dielectric layer, and making metal electrodes at the metal holes by photolithography and etching techniques include: Depositing a first deposited dielectric layer to the top of the doped layer, forming an etching pattern on the doped layer using photolithography, protecting the portion that does not need to be etched using an etching protective glue, etching the deposited layers on both sides of the doped layer and the optical absorption layer using an etching technology, and cleaning the etching protective glue after completion; A pattern of metal holes is formed on the top of the first deposited dielectric layer on both sides of the optical absorption layer by photolithography technology, and the parts that do not need to be etched are protected by etching protection glue, and the metal holes are etched by etching technology. After completion, the etching protection glue is cleaned; The metal sample is transferred into the electron beam evaporation furnace, and the metal film is deposited by electron beam evaporation technology. Then, the shape of the metal electrode is obtained through photolithography and etching technology, and the metal electrode is placed in the metal hole; A pattern of metal holes is formed on the top of the first deposited dielectric layer on the top of the doped layer by photolithography technology, and an etching protective glue is used to protect the part that does not need to be etched. The metal holes are etched by etching technology, and the etching protective glue is cleaned after completion; The metal sample is transferred into the electron beam evaporation furnace, and the metal film is deposited by electron beam evaporation technology. Then, the shape of the metal electrode is obtained through photolithography and etching technology, and the metal electrode is placed in the metal hole.

9. The high-speed detector structure with a super-surface structure according to claim 8, characterized in that: The step of depositing the third dielectric layer, preparing the super surface structure by photolithography and etching, and opening the electrode metal holes to complete the production of the super surface detector specifically includes: The third dielectric layer is deposited, and a smooth surface is obtained by polishing technology. The metasurface structure is prepared by photolithography and etching methods. Electrode metal holes are opened to complete the production of the metasurface detector.

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