Preparation method of down-conversion laminated cell

Abstract

The invention discloses a preparation method of a down-conversion laminated cell, which belongs to the technical field of solar cells and comprises a crystalline silicon bottom cell, a composite layer, a hole transport layer, a perovskite absorption layer, a passivation layer, a down-conversion doped electron transport layer, a hole barrier layer, a transparent conductive film layer, an antireflection layer and a metal electrode. Wherein the down-conversion doping material can be selected from any one of rare earth elements Er, Yb, Eu and Tb; according to the scheme, by introducing the down-conversion material, ultraviolet photons with energy higher than that of a semiconductor band gap are converted into two or more low-energy photons, so that the crystalline silicon perovskite laminated cell can absorb and utilize photons in a wider spectral range, and the photoelectric conversion efficiency is improved. And meanwhile, the down-conversion material absorbs harmful ultraviolet light of perovskite, so that the perovskite layer can be protected from being influenced by light degradation, and the effect of prolonging the service life of the cell is achieved.

Description

Technical Field

[0001] The invention relates to the technical field of solar cells, and more specifically to a method for preparing a down-conversion stacked cell. Background Art

[0002] As the photovoltaic market expands, the first generation of crystalline silicon solar cells has reached a bottleneck, and photovoltaic technology needs research and development innovation to meet the requirements of cost reduction and efficiency improvement. Crystalline silicon / perovskite tandem solar cells have attracted widespread attention due to their excellent photoelectric conversion efficiency, and their efficiency has now reached 34.6%. The working principle of silicon perovskite tandem cells is to use two materials to absorb and convert different parts of the solar spectrum. As the top cell, the perovskite cell mainly absorbs high-energy photons in sunlight, generates a higher voltage, and effectively reduces the thermal loss caused by high-energy electrons. As the bottom cell, the silicon cell absorbs lower energy photons that pass through the perovskite layer, further improving the utilization rate of photons by broadening the spectral absorption range.

[0003] However, the spectral response range of the tandem cell is limited, mainly concentrated in the visible light range. For photons with energy higher than the semiconductor band gap, such as ultraviolet light, only a small part of the energy can be used by the battery, while the energy beyond the band gap is lost through lattice thermal vibration; this limits the photoelectric conversion efficiency of the tandem cell.

[0004] To this end, a method for preparing a down-conversion stacked cell is proposed. Summary of the invention

[0005] In view of the problems existing in the prior art, the purpose of the present invention is to provide a method for preparing a down-conversion tandem cell, which can solve the problem of limited absorption spectrum range of the tandem cell by absorbing ultraviolet light and converting it into two or more low-energy photons.

[0006] To solve the above problems, the present invention adopts the following technical solutions.

[0007] A method for preparing a down-conversion stacked cell, including a crystalline silicon bottom cell, comprises the following steps:

[0008] S1, magnetron sputtering a composite layer on a crystalline silicon bottom cell substrate;

[0009] S2, spin coating a hole transport layer on the composite layer;

[0010] S3, spin coating a perovskite absorption layer on the hole transport layer;

[0011] S4, spin coating a passivation layer on the perovskite absorption layer;

[0012] S5, evaporating a down-conversion doped electron transport layer on the passivation layer;

[0013] S6, atomically layer depositing a hole blocking layer on the down-conversion doped electron transport layer;

[0014] S7, magnetron sputtering a transparent conductive thin film layer on the hole blocking layer;

[0015] S8, evaporating an anti-reflection layer on the transparent conductive film layer;

[0016] S9. Evaporating a metal electrode on the anti-reflection layer.

[0017] The down-conversion stacked cell includes, from bottom to top, a crystalline silicon bottom cell, a composite layer, a hole transport layer, a perovskite absorption layer, a passivation layer, a down-conversion doped electron transport layer, a hole blocking layer, a transparent conductive film layer, an anti-reflection layer, and a metal electrode.

[0018] Wherein, the down-conversion doping material can be selected from any one of the rare earth elements Er, Yb, Eu, and Tb.

[0019] Furthermore, the crystalline silicon bottom cell is any one of a HJT cell, a Topcon cell, and a perc cell.

[0020] Furthermore, the composite layer has a thickness of 5-40 nm, and the composite layer is any one of ITO, IZO or IWO.

[0021] Furthermore, the thickness of the hole transport layer is 5-50 nm, and the material of the hole transport layer is Meo-2PACz, Me-4PAC, PTAA, NiO x , CuI, any one of them.

[0022] Furthermore, the thickness of the passivation layer is 1-5 nm, and the material of the passivation layer can be selected from any one of PI, PEAI, EDAI2, LiF, and MgF2.

[0023] Furthermore, the thickness of the electron transport layer is 5-40 nm, and the material of the electron transport layer can be selected from C 60 , PCBM, SnO2.

[0024] Furthermore, the thickness of the hole blocking layer is 5-40 nm, and the material of the hole blocking layer can be selected from TiO2, SnO2, ZnO, ZnSnO x Any one of .

[0025] Furthermore, the thickness of the transparent conductive film layer is 40-200 nm, and the material of the transparent conductive film layer can be selected from any one of ITO, IZO or IWO.

[0026] Furthermore, the thickness of the anti-reflection layer is 60-150 nm, and the material of the anti-reflection layer can be selected from any one of LiF, MgF2, and PMMA.

[0027] Furthermore, the thickness of the perovskite layer is 400-1200 nm, and the structural formula of the perovskite layer can be MAPbI3 (the structural formula of MA is CH3NH 3+ ), FAPbI3 (the structural formula of FA is CH4N 2+ ), FA x Cs y MA 1-x-y Pb(I a Br b Cl 1-a-b ) Any one of 3.

[0028] Compared with the prior art, the present invention has the following beneficial effects:

[0029] (1) This solution converts ultraviolet photons with energy higher than the semiconductor band gap into two or more low-energy photons by introducing down-conversion materials, so that the crystalline silicon perovskite tandem battery can absorb and utilize photons in a wider spectral range, thereby improving the photoelectric conversion efficiency. At the same time, the down-conversion material absorbs the harmful ultraviolet light of the perovskite, which can protect the perovskite layer from photodegradation and play a role in extending the service life of the battery.

[0030] (2) The tandem cell of the present invention uses a wide bandgap perovskite as the top cell and a narrow bandgap silicon cell as the bottom cell, and realizes the series connection of the top cell and the bottom cell through a composite layer. At the same time, a down-conversion material is doped in the electron transport layer. The down-conversion material absorbs ultraviolet light with energy higher than the semiconductor bandgap and converts it into two or more low-energy photons, thereby increasing the spectral absorption range of the tandem cell and eliminating the photodegradation of the perovskite caused by ultraviolet light, thereby greatly improving the device performance of the tandem cell. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 A flow chart for preparing a down-conversion stacked cell according to the present invention;

[0032] Figure 2 It is a schematic diagram of the structure of the down-conversion stacked battery of the present invention. DETAILED DESCRIPTION

[0033] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention; it is obvious that the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments, and all other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making creative work are within the scope of protection of the present invention.

[0034] Embodiment 1:

[0035] See also Figure 1 to Figure 2 A method for preparing a down-conversion stacked cell, including a crystalline silicon bottom cell, comprises the following steps:

[0036] S1, magnetron sputtering a composite layer on a crystalline silicon bottom cell substrate;

[0037] S2, spin coating a hole transport layer on the composite layer;

[0038] S3, spin coating a perovskite absorption layer on the hole transport layer;

[0039] S4, spin coating a passivation layer on the perovskite absorption layer;

[0040] S5, evaporating a down-conversion doped electron transport layer on the passivation layer;

[0041] S6, atomically layer depositing a hole blocking layer on the down-conversion doped electron transport layer;

[0042] S7, magnetron sputtering a transparent conductive thin film layer on the hole blocking layer;

[0043] S8, evaporating an anti-reflection layer on the transparent conductive film layer;

[0044] S9. Evaporating a metal electrode on the anti-reflection layer.

[0045] The down-conversion stacked cell includes, from bottom to top, a crystalline silicon bottom cell, a composite layer, a hole transport layer, a perovskite absorption layer, a passivation layer, a down-conversion doped electron transport layer, a hole blocking layer, a transparent conductive film layer, an anti-reflection layer, and a metal electrode.

[0046] Wherein, the down-conversion doping material can be selected from any one of the rare earth elements Er, Yb, Eu, and Tb.

[0047] like Figure 1 As shown, the crystalline silicon bottom cell is any one of a HJT cell, a Topcon cell, and a perc cell.

[0048] like Figure 1 As shown, the thickness of the composite layer is 5-40 nm, and the composite layer is any one of ITO, IZO or IWO.

[0049] like Figure 1 As shown, the thickness of the hole transport layer is 5-50nm, and the material of the hole transport layer is Meo-2PACz, Me-4PAC, PTAA, NiO x , CuI, any one of them.

[0050] like Figure 1 As shown, the thickness of the passivation layer is 1-5 nm, and the material of the passivation layer can be selected from any one of PI, PEAI, EDAI2, LiF, and MgF2.

[0051] like Figure 1 As shown, the thickness of the electron transport layer is 5-40nm, and the material of the electron transport layer can be selected from C 60 , PCBM, SnO2.

[0052] like Figure 1 As shown, the thickness of the hole blocking layer is 5-40nm, and the material of the hole blocking layer can be selected from TiO2, SnO2, ZnO, ZnSnO x Any one of .

[0053] like Figure 1 As shown, the thickness of the transparent conductive film layer is 40-200 nm, and the material of the transparent conductive film layer can be selected from any one of ITO, IZO or IWO.

[0054] like Figure 1 As shown, the thickness of the anti-reflection layer is 60-150 nm, and the material of the anti-reflection layer can be selected from any one of LiF, MgF2, and PMMA.

[0055] like Figure 1 As shown, the thickness of the perovskite layer is 400-1200nm, and the structural formula of the perovskite layer can be MAPbI3 (the structural formula of MA is CH3NH 3+ ), FAPbI3 (the structural formula of FA is CH4N 2+ ), FA x Cs y MA 1-x-y Pb(I a Br b Cl 1-a-b ) Any one of 3.

[0056] By introducing down-conversion materials, ultraviolet photons with energy higher than the semiconductor band gap are converted into two or more low-energy photons, so that crystalline silicon perovskite tandem cells can absorb and utilize photons in a wider spectral range, thereby improving the photoelectric conversion efficiency. At the same time, the down-conversion material absorbs the harmful ultraviolet light of the perovskite, which can protect the perovskite layer from photodegradation and extend the service life of the battery.

[0057] The above is only a preferred specific implementation of the present invention; however, the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes according to the technical solution and its improved conception within the technical scope disclosed by the present invention, which should be covered by the protection scope of the present invention.

Claims

1. A method for preparing a down-conversion stacked cell, comprising a crystalline silicon bottom cell, characterized in that: The steps include: S1, magnetron sputtering a composite layer on a crystalline silicon bottom cell substrate; S2, spin coating a hole transport layer on the composite layer; S3, spin coating a perovskite absorption layer on the hole transport layer; S4, spin coating a passivation layer on the perovskite absorption layer; S5, evaporating a down-conversion doped electron transport layer on the passivation layer; S6, atomically layer depositing a hole blocking layer on the down-conversion doped electron transport layer; S7, magnetron sputtering a transparent conductive thin film layer on the hole blocking layer; S8, evaporating an anti-reflection layer on the transparent conductive film layer; S9. Evaporating a metal electrode on the anti-reflection layer.

2. The method for preparing a down-conversion stacked cell according to claim 1, characterized in that: The crystalline silicon bottom cell is any one of a HJT cell, a Topcon cell, and a perc cell.

3. The method for preparing a down-conversion stacked cell according to claim 1, characterized in that: The composite layer has a thickness of 5-40 nm, and is any one of ITO, IZO or IWO.

4. The method for preparing a down-conversion stacked cell according to claim 1, characterized in that: The thickness of the hole transport layer is 5-50nm, and the material of the hole transport layer is Meo-2PACz, Me-4PAC, PTAA, NiO x , CuI, any one of them.

5. The method for preparing a down-conversion stacked cell according to claim 1, characterized in that: The thickness of the passivation layer is 1-5 nm, and the material of the passivation layer can be selected from any one of PI, PEAI, EDAI2, LiF, and MgF2.

6. The method for preparing a down-conversion stacked cell according to claim 1, characterized in that: The thickness of the electron transport layer is 5-40 nm, and the material of the electron transport layer can be selected from C 60 , PCBM, SnO2.

7. The method for preparing a down-conversion stacked cell according to claim 1, characterized in that: The thickness of the hole blocking layer is 5-40 nm, and the material of the hole blocking layer can be selected from TiO2, SnO2, ZnO, ZnSnO x Any one of .

8. The method for preparing a down-conversion stacked cell according to claim 1, characterized in that: The thickness of the transparent conductive film layer is 40-200 nm, and the material of the transparent conductive film layer can be selected from any one of ITO, IZO or IWO.

9. The method for preparing a down-conversion stacked cell according to claim 1, characterized in that: The thickness of the anti-reflection layer is 60-150 nm, and the material of the anti-reflection layer can be selected from any one of LiF, MgF2, and PMMA.

10. The method for preparing a down-conversion stacked cell according to claim 1, characterized in that: The thickness of the perovskite layer is 400-1200nm, and the structural formula of the perovskite layer can be MAPbI3, FAPbI3, FA x Cs y MA 1-x-y Pb(I a Br b Cl 1-a-b ) Any one of 3.

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