Perovskite film on large-size suede substrate, preparation method of perovskite film and battery

Abstract

The invention relates to a perovskite film on a large-size suede substrate, a preparation method of the perovskite film and a cell, belongs to the technical field of solar cells, and is used for solving at least one of the problems that the perovskite film is difficult to grow on a large-size suede in a shape-preserving manner, the perovskite crystallinity is poor, the solution utilization rate is relatively low, the repeatability is poor and the like during ultrasonic spraying in the prior art. According to the method provided by the invention, the perovskite precursor solution is fully atomized under high pressure to form a Taylor cone and generate coulomb explosion, and in the flight process, liquid drops are split for multiple times under the combined action of increase of the charge-to-mass ratio of colloidal particles and liquid tension to form smaller liquid drops, so that the atomization degree is higher. Meanwhile, electrostatic attraction exists between perovskite liquid drops and the substrate through the generated electric field, the charged liquid drops are deposited on the conductive substrate in a targeted mode, crystal grains can better grow along a textured pyramid in a shape-preserving mode, therefore, solution loss is reduced, the solution utilization rate is increased, the perovskite crystal quality is higher, and repeatability is better.

Description

Technical Field

[0001] The present invention relates to the technical field of solar cells, and in particular to a perovskite film on a large-size velvet substrate, a preparation method thereof, and a cell. Background Art

[0002] The bandgap adjustability and simple process preparation of halide perovskite solar cells make them excellent candidates for tandem solar cells. The theoretical efficiency of perovskite / silicon tandem solar cells exceeds 42%, and the current record efficiency has reached 34.6%. The large-scale pyramid structure in crystalline silicon with large-scale velvet has good light trapping performance, thus having higher light absorption rate and obtaining higher device short-circuit current density. Since the size of large-scale velvet pyramids is more than 1 micron, conventional perovskite preparation methods such as spin coating, scraping, and slit coating cannot obtain the conformal growth of perovskite on large-scale velvet (hereinafter referred to as large velvet). The evaporation method requires a high vacuum degree to prepare perovskite, which is costly and cannot accurately control the composition ratio of each precursor in the perovskite.

[0003] At present, the ultrasonic spraying method for preparing perovskite film relies only on the atomization mechanism of the liquid surface being atomized by ultra-high frequency sound wave vibration, and can only atomize at the nozzle. There is no secondary atomization process during the flight, and the droplets tend to aggregate to form larger droplets during the flight, further reducing the droplet diameter. Its atomization degree is low, which easily causes the perovskite solution to aggregate at the bottom of the pyramid, resulting in non-conservative growth of the perovskite film. Summary of the invention

[0004] In view of the above analysis, the present invention aims to provide a perovskite film on a large-sized velvet substrate and a preparation method and a battery thereof, so as to solve at least one of the problems of the prior art that the perovskite film is not easy to grow in a conformal manner on a large-sized velvet surface during ultrasonic spraying, the perovskite has poor crystallinity, the solution utilization rate is low, and the repeatability is poor.

[0005] In a first aspect, the present invention provides a method for preparing a perovskite film on a large-sized velvet substrate, comprising atomizing a perovskite precursor solution under an electric field to form a Taylor cone, spraying it on the large-sized velvet substrate, and heating and annealing to obtain a perovskite film.

[0006] Furthermore, the height of the pyramids formed in the large-size velvet substrate is 1-5 μm.

[0007] Furthermore, the preparation of the perovskite film is carried out in an electrospinning device, which includes a syringe, a needle tip and a base, and a voltage of 10 to 30 kV is applied between the needle tip and the base.

[0008] Furthermore, the method specifically includes fixing the positive electrode on the needle tip and the negative electrode on the base, wherein the base is a rotating structure, the perovskite precursor solution is pushed out from the syringe at a uniform speed, a stable Taylor pile is obtained at the needle tip, and the solution flies and falls onto a large-sized velvet substrate on the base under an electric field, and after annealing, a perovskite film is formed.

[0009] Furthermore, the uniform pushing speed is 0.005-0.035 mm / s.

[0010] Furthermore, the spraying time is 5 to 15 minutes.

[0011] Furthermore, the inner diameter of the needle tip is 0.90-2.41 mm, and the vertical distance between the needle tip and the large-size velvet base is 5-35 cm.

[0012] Furthermore, the heating annealing temperature is 80-140° C., and the time is 5-30 min.

[0013] Furthermore, before spraying the large-size suede substrate, it is first cleaned under ultraviolet light for 5 to 10 minutes.

[0014] In a second aspect, the present invention provides a perovskite film prepared by the above method.

[0015] In a third aspect, the present invention provides a perovskite cell comprising the above-mentioned perovskite film, wherein the perovskite film is a light absorbing layer.

[0016] Compared with the prior art, the present invention can achieve at least one of the following beneficial effects: (1) The method of the present invention fully atomizes the perovskite precursor solution under high pressure to form a Taylor cone and produce a Coulomb explosion. During the flight, the increase in the charge-to-mass ratio of the colloid particles and the combined effect of the liquid tension cause the droplets to split multiple times to form smaller droplets with a higher degree of atomization. At the same time, the generated electric field causes electrostatic attraction between the perovskite droplets and the substrate, and the charged droplets are targeted for deposition on the conductive substrate, which can better achieve the conformal growth of the grains along the velvet pyramid, thereby reducing solution loss, improving solution utilization, and making the perovskite crystallization quality higher and more repeatable; (2) When the perovskite cell prepared by the method of the present invention is applied to the field of solar cells, it can effectively reduce the difficulty of preparing perovskite films on large-size velvet substrates, with low cost, simple and repeatable preparation, open circuit voltage Voc of 1.8~2.0V, conversion efficiency PCE ≥30%, fill factor of 70%~85%, and short circuit current density Jsc of 19~21 mA / cm 2 .

[0017] In the present invention, the above-mentioned technical solutions can also be combined with each other to achieve more preferred combination solutions. Other features and advantages of the present invention will be described in the subsequent description, and some advantages can become obvious from the description, or can be understood by practicing the present invention. The purpose and other advantages of the present invention can be realized and obtained through the contents particularly pointed out in the description and the drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The accompanying drawings are only used for the purpose of illustrating specific embodiments and are not to be considered as limiting the present invention. In the entire drawings, the same reference symbols represent the same components; Figure 1 A schematic diagram of a process for preparing a perovskite film according to the present invention; Figure 2 is a SEM image of the perovskite film prepared in the experimental sample 1 of the present invention; Figure 3 is a SEM image of the perovskite film prepared in the experimental sample 2 of the present invention; Figure 4 is a SEM image of the perovskite film prepared in the experimental sample 3 of the present invention; Figure 5 is a SEM image of the perovskite film prepared in control sample 7 of the present invention; Figure 6 The current density-voltage characteristic curve of the perovskite device prepared in the experimental sample 1 of the present invention; Figure 7 The current density-voltage characteristic curve of the perovskite device prepared in the experimental sample 2 of the present invention; Figure 8 The current density-voltage characteristic curve of the perovskite device prepared in the experimental sample 3 of the present invention; Fig. 9 is a current density-voltage characteristic curve of the perovskite device prepared in the control sample 1 of the present invention; Fig.10 is a current density-voltage characteristic curve of the perovskite device prepared in the control sample 2 of the present invention; Fig.11 is a current density-voltage characteristic curve of the perovskite device prepared in the control sample 3 of the present invention; Fig.12 is a current density-voltage characteristic curve of the perovskite device prepared in the control sample 7 of the present invention; Fig.13 XRD comparison diagram of the perovskite film prepared in the test sample 1 and the control sample 7 of the present invention; Fig.14 This is a schematic diagram of the process of preparing a perovskite battery according to Comparative Example 4 of the present invention.

[0019] Reference numerals: 1- syringe, 2- needle tip, 3- base, 4- large size velvet base, 5- electrode plate. DETAILED DESCRIPTION

[0020] The preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings, wherein the accompanying drawings constitute a part of the present invention and are used together with the embodiments of the present invention to illustrate the principles of the present invention, but are not used to limit the scope of the present invention.

[0021] A specific embodiment of the present invention discloses a method for preparing a perovskite film on a large-sized velvet substrate, comprising atomizing a perovskite precursor solution under an electric field to form a Taylor cone, spraying it on the large-sized velvet substrate, and heating and annealing to obtain a perovskite film.

[0022] The method of the present invention fully atomizes the perovskite precursor solution under high pressure to form a Taylor cone and produce a Coulomb explosion. During the flight, the increase in the charge-to-mass ratio of the colloid particles and the combined effect of the liquid tension cause the droplets to split multiple times to form smaller droplets with a higher degree of atomization. At the same time, the generated electric field causes electrostatic attraction between the perovskite droplets and the substrate, and the charged droplets are targetedly deposited on the conductive substrate, which can better achieve the conformal growth of the grains along the velvet pyramid, thereby reducing solution loss, improving solution utilization, and making the perovskite crystallization quality higher and more repeatable.

[0023] In a specific embodiment, the height of the pyramids formed in the large-size velvet substrate is 1-5 μm.

[0024] In a specific implementation manner, as Figure 1 As shown, the preparation of the perovskite film is carried out in an electrospinning device. The electrospinning device of the present invention is an existing device, for example, the DP30 basic electrospinning machine of Yunfan (Tianjin) Instrument Co., Ltd. The electrospinning device includes a syringe 1, a needle tip 2 and a base 3. The syringe 1 is used to place the perovskite precursor solution, and the base 3 is used to place the large-size velvet substrate.

[0025] Preferably, the syringe 1 is also connected to a needle tip 2, the perovskite precursor solution is sprayed out from the needle tip 2, and a voltage of 10-30 kV is applied between the needle tip 2 and the base 3.

[0026] Specifically, the positive electrode is fixed on the needle tip 2, and the negative electrode is fixed on the base 3. The base 3 is a rotating structure. The perovskite precursor solution is pushed out from the syringe 1 at a uniform speed to obtain a stable Taylor pile at the needle tip. The solution flies under the electric field and falls onto the large-sized velvet substrate on the base 3. After annealing, a perovskite film is formed.

[0027] In a specific embodiment, the uniform pushing speed is 0.005-0.035 mm / s.

[0028] It should be noted that the above speed is matched with the voltage applied between the needle tip 2 and the base 3. If the pushing speed is too fast, it will cause liquid spraying or even discharge.

[0029] In a specific embodiment, the spraying time is 5 to 15 min, for example, 5 min, 6 min, 7 min, 8 min, 9 min, 10 min, 11 min, 12 min, 13 min, 14 min, and 15 min.

[0030] The above-mentioned spraying time is set in combination with the pushing speed and the volatilization time of the perovskite precursor solution. If the spraying time is too long, the perovskite will be exposed to the air, and if the pushing time is too short, the film thickness will not be enough.

[0031] In a specific embodiment, the inner diameter of the needle tip is 0.90 ~ 2.41 mm, for example, 0.90mm, 1.0mm, 1.1mm, 1.2mm, 1.3mm, 1.4mm, 1.5mm, 1.6mm, 1.7mm, 1.8mm, 1.9mm, 2.0mm, 2.1mm, 2.2mm, 2.3mm, 2.4mm, and the vertical distance between the needle tip and the large-size suede base is 5 ~ 35 cm, for example, 5cm, 7cm, 9cm, 11cm, 13cm, 15cm, 17cm, 19cm, 21cm, 23cm, 25cm, 27cm, 29cm, 31cm, 33cm, 35cm. In a specific embodiment, the temperature of heating annealing is 80~140℃, for example, 80℃, 85℃, 90℃, 95℃, 100℃, 105℃, 110℃, 115℃, 120℃, 125℃, 130℃, 135℃, 140℃, and the time is 5~30min, for example, 5min, 7min, 9min, 11min, 13min, 15min, 17min, 19min, 21min, 23min, 25min, 27min, 29min, 30min.

[0032] It should be noted that if the temperature is too low, the phase transformation of perovskite cannot be completed, and if the temperature is too high, the perovskite will decompose.

[0033] In a specific embodiment, the solvent in the perovskite precursor solution is dimethylformamide and / or dimethyl sulfoxide, and the concentration of perovskite in the precursor solution is 1.5-2.5 mol / L.

[0034] It should be noted that in order to quickly atomize the solution, the required perovskite solution concentration is greater than 1.5 mol / L, and in order to ensure the dissolution of the perovskite solute, the required perovskite solution concentration is less than 2.5 mol / L.

[0035] In a specific embodiment, the perovskite includes the following raw materials in parts by weight: 538-897 parts of lead iodide, 192-320 parts of iodomethane, 98-163 parts of lead bromide, 82-136 parts of cesium iodide, 18-33 parts of lead chloride and 10-16 parts of methylamine chloride.

[0036] Specifically, the perovskite precursor solution is stirred at room temperature for 10 to 14 hours and then added into the syringe of the electrospraying device.

[0037] In a specific embodiment, the perovskite film has an ABX3 type crystal structure, wherein A is an organic cation or a mixture of an organic cation and an inorganic cation, such as CH4N2 + , CH5N + , Cs + One or more of the following, B is Pb 2+ , X is Cl - Br - ,I - One or more of the .

[0038] In a specific embodiment, before spraying the large-size suede substrate, it is first cleaned under ultraviolet light for 5 to 10 minutes.

[0039] It should be noted that the large-sized textured substrate of the present invention is a substrate such as silicon, and also includes spraying the perovskite precursor solution after forming a hole transport layer on the large-sized textured substrate to obtain a perovskite film.

[0040] Another specific embodiment of the present invention discloses a perovskite film prepared by the above method.

[0041] Another specific embodiment of the present invention discloses a perovskite cell including the above-mentioned perovskite film.

[0042] When the perovskite cell prepared by the method of the present invention is applied to the field of solar cells, the difficulty of preparing the perovskite film on a large-size velvet substrate can be effectively reduced, the cost is low, the preparation is simple and repeated, the open circuit voltage Voc is 1.8~2.0V, the conversion efficiency PCE ≥30%, the fill factor is 70%~85%, and the short circuit current density Jsc is 19~21 mA / cm 2 .

[0043] In a specific embodiment, the perovskite film is a light absorbing layer.

[0044] Specifically, the perovskite cell is stacked in sequence from bottom to top with a back electrode, a hole transport layer, a light absorption layer, an electron transport layer, a metal electrode and an anti-reflection layer.

[0045] Another specific embodiment of the present invention discloses a method for preparing the above-mentioned perovskite battery, comprising the following steps: (1) Preparing a back electrode on the back of a large-scale suede substrate; (2) Preparing a hole transport layer on the front side of a large-scale velvet substrate; (3) preparing a perovskite film on the hole transport layer; (4) preparing an electron transport layer on the perovskite film; (5) preparing a metal electrode on the electron transport layer; (6) Preparing an anti-reflection layer on the metal electrode to obtain the perovskite cell.

[0046] Specifically, in step (1), a back electrode is prepared on the back side of a large-sized suede substrate by vacuum evaporation of silver.

[0047] Specifically, in step (2), a SAM (self-assembled monolayer) solution is spin-coated on the front surface of the large-sized suede substrate, and heated and annealed to obtain a SAM hole transport layer.

[0048] The spin coating speed is 2000-6000 rpm, the spin coating time is 20-40 seconds, the heating annealing temperature is 80-120°C, and the annealing time is 5-20 minutes. Specifically, in step (4), C 60 and atomically deposited SnO2 to form an electron transport layer on the perovskite film.

[0049] Specifically, in step (5), silver is vacuum evaporated as the metal electrode.

[0050] Specifically, in step (6), the anti-reflection layer is obtained by vacuum evaporation of MgF2.

[0051] Another specific embodiment of the present invention discloses a solar cell device, including the above-mentioned perovskite cell.

[0052] The technical solution of the present invention is further explained below in conjunction with specific embodiments.

[0053] Example 1 A method for preparing a perovskite film on a large-sized textured silicon substrate according to this embodiment includes the following steps: (1) The perovskite precursor solution was stirred at room temperature for 12 h in a nitrogen atmosphere, filtered, added to the syringe in the electrospraying setup, fixed on the electrospinning device, and the large-size suede silicon substrate was placed on a rotatable base; (2) Turning on the electrospinning equipment, applying a high voltage alternating current of 20 kV between the needle tip and the base, and simultaneously pushing out the perovskite precursor solution in the syringe at a uniform speed of 0.015 mm / s, spraying for 8 minutes, and annealing at 120° C. for 20 minutes to form a perovskite film, wherein the inner diameter of the needle tip is 0.90 mm, and the vertical distance between the needle tip and the large-size velvet base is 35 cm; The perovskite precursor in this embodiment is prepared by the following method: 789 mg of lead iodide, 282 mg of iodoformamide, 143 mg of lead bromide, 120 mg of cesium iodide, 29 mg of lead chloride, and 14 mg of methylamine chloride are dissolved in 1 mL of a mixed solution of dimethylformamide (DMF) and dimethyl sulfoxide (DMSO).

[0054] Example 2 A method for preparing a perovskite film on a large-sized textured silicon substrate according to this embodiment includes the following steps: (1) The perovskite precursor solution was stirred at room temperature for 10 h in a nitrogen atmosphere, filtered, added to the syringe in the electrospraying setup, fixed on the electrospinning device, and the large-size suede silicon substrate was placed on a rotatable base; (2) Turning on the electrospinning equipment, applying a high voltage alternating current of 10 kV between the needle tip and the base, and simultaneously pushing out the perovskite precursor solution in the syringe at a uniform speed of 0.005 mm / s, spraying for 15 minutes, and annealing at 140° C. for 30 minutes to form a perovskite film, wherein the inner diameter of the needle tip is 1.30 mm, and the vertical distance between the needle tip and the large-size velvet base is 20 cm; The perovskite precursor in this embodiment is prepared by the following method: 538 mg of lead iodide, 192 mg of iodoformamide, 98 mg of lead bromide, 82 mg of cesium iodide, 18 mg of lead chloride, and 10 mg of methylamine chloride are dissolved in 1 mL of a mixed solution of dimethylformamide (DMF) and dimethyl sulfoxide (DMSO).

[0055] Example 3 A method for preparing a perovskite film on a large-sized textured silicon substrate according to this embodiment includes the following steps: (1) The perovskite precursor solution was stirred at room temperature for 14 h in a nitrogen atmosphere, filtered, added to the syringe in the electrospraying setup, fixed on the electrospinning device, and the large-size suede silicon substrate was placed on a rotatable base; (2) Turn on the electrospinning equipment, apply 30 kV high voltage alternating current between the needle tip and the base, and push the perovskite precursor solution in the syringe at a uniform speed of 0.035 mm / s, spray for 5 minutes, and anneal at 140°C for 5 minutes to form a perovskite film, wherein the inner diameter of the needle tip is 2.41 mm, and the vertical distance between the needle tip and the large-size velvet base is 5 cm; The perovskite precursor in this embodiment is prepared by the following method: 897 mg of lead iodide, 320 mg of iodoformamide, 163 mg of lead bromide, 136 mg of cesium iodide, 33 mg of lead chloride, and 16 mg of methylamine chloride are dissolved in 1 mL of a mixed solution of dimethylformamide (DMF) and dimethyl sulfoxide (DMSO).

[0056] Comparative Example 1 The preparation method of the perovskite film in this comparative example is the same as that in Example 1, except that in step (2), the voltage is 5 kV.

[0057] Comparative Example 2 The preparation method of the perovskite film in this comparative example is the same as that in Example 1, except that in step (2), the pushing speed is 0.05 mm / s.

[0058] Comparative Example 3 The preparation method of the perovskite film in this comparative example is the same as that in Example 1, except that in step (2), the spraying time is 25 minutes.

[0059] Comparative Example 4 The preparation method of the perovskite film in this comparative example is the same as that in Example 1, except that, instead of applying voltage between the needle tip and the base, an electrode 5 is provided at the upper end of the syringe, and voltage is applied between the electrode 5 and the base 3, placing the syringe in the electric field. Fig.14 shown.

[0060] Comparative Example 5 The preparation method of the perovskite film in this comparative example is the same as that in Example 1, except that the vertical distance between the needle tip and the large-size suede substrate is 40 cm.

[0061] Comparative Example 6 The preparation method of the perovskite film in this comparative example is the same as that in Example 1, except that the inner diameter of the needle tip is 0.55 mm.

[0062] Application Example 1 The height of the pyramids textured in the substrate used in the following perovskite battery preparation is 1~5μm.

[0063] This application example is a method for preparing a perovskite battery, which specifically includes the following steps: (1) Forming a back electrode on the back of a large-scale textured silicon substrate by vacuum evaporation of silver; (2) Spin coating the SAM solution on the front of a clean large-sized suede silicon substrate at 3000 rpm for 30 s, and then annealing the large-sized suede silicon substrate after spin coating the SAM solution at 100°C for 10 minutes to form a SAM hole transport layer on the large-sized suede silicon substrate; The SAM solution is prepared by dissolving 1 mg Me-2PACz (dimethoxycarbazole) in ethanol and stirring the mixture. (3) Preparing a perovskite film on the hole transport layer using the methods of Examples 1-3 and Comparative Examples 1-6 respectively; (4) Vacuum evaporation C 60 and atomically deposited SnO2 to form an electron transport layer on the perovskite film; (5) Vacuum evaporation of silver as a metal electrode on the electron transport layer; (6) An anti-reflection layer was obtained on the metal electrode by vacuum evaporation of MgF2, and the perovskite cells of the experimental samples 1-3 and the perovskite cells of the control samples 1-6 were obtained respectively.

[0064] The preparation of the perovskite cell of control sample 7 is as follows: (1) Forming a back electrode on the back of a large-scale textured silicon substrate by vacuum evaporation of silver; (2) Spin coating the SAM solution on the front of a clean large-sized suede silicon substrate at 3000 rpm for 30 s, and then annealing the large-sized suede silicon substrate after spin coating the SAM solution at 100 °C for 10 minutes to form a SAM hole transport layer on the large-sized suede silicon substrate; The SAM solution is prepared by dissolving 1 mg Me-2PACz (dimethoxycarbazole) in ethanol and stirring the mixture. (3) The perovskite precursor solution (the same as in Example 1) was stirred at room temperature for 12 hours under a nitrogen atmosphere, filtered, and then spin-coated on the SAM hole transport layer at 4000 rpm for 30 seconds, and then annealed at 120°C for 20 minutes to form a perovskite film; (4) Vacuum evaporation C 60 and atomically deposited SnO2 to form an electron transport layer on the perovskite film; (5) Silver is used as electrode by vacuum evaporation; (6) Finally, an anti-reflection layer is obtained by vacuum evaporation of MgF2 to obtain the perovskite cell of control sample 4.

[0065] (I) The SEM images of the perovskite films prepared in Examples 1-3 and Control Sample 7 are shown in Figure 1. Figure 2-4As shown in Figure 5, the perovskite film prepared by the method of the present invention has higher shape retention and high repeatability on a large-sized suede substrate.

[0066] (ii) XRD patterns of the perovskite films prepared by the test sample 1 and the control sample 7 were tested respectively. Fig.13 As shown in FIG. 1 , it can be seen from the comparison that the perovskite film prepared by the method of the present invention has better crystallinity.

[0067] (III) The performance of the perovskite cells of the test samples 1-3 and the control samples 1-7 were tested respectively. In the specific test process, the solar simulator was Keitheley 2400, Enli Technology Co.; the test condition for the current density-voltage curve of the perovskite cell was AM 1.5 G. The results are shown in Table 1 and Figure 6-12 shown.

[0068]

[0069] Compared with the test sample 1, the control sample 4 adopts the electrostatic spraying method of comparative example 4, and the electric field strength is weak, and the voltage required for Coulomb explosion cannot be reached at the needle tip, while the solution of the method of embodiment 1 can form a Taylor cone at the needle tip and produce a Coulomb explosion, and during the flight, the increase in the charge-to-mass ratio of the colloid particles and the combined effect of the liquid tension can cause the droplets to split multiple times to form smaller droplets. The perovskite solution is dispersed more evenly when it reaches the substrate, which is more conducive to improving the crystallinity of the perovskite on the large velvet surface. At the same time, the generated electric field causes electrostatic attraction between the perovskite droplets and the substrate, and the charged droplets are targeted and deposited on the conductive substrate along the pyramid shape of the substrate. Compared with other preparation methods, this method can better achieve the conformal growth of grains along the velvet pyramid, reduce solution loss, improve solution utilization, and make the perovskite crystallization quality higher and more repeatable.

[0070] From the above results, it can be seen that the perovskite film prepared by the method of the present invention has better shape retention, better crystal quality, and high repeatability, which can effectively reduce the difficulty of preparing perovskite films on large-sized suede substrates. This method can produce high-performance tandem battery devices, and the efficiency of the prepared perovskite / large-sized suede silicon tandem battery exceeds 30%.

[0071] Since the control sample 5 is too far away from the base, the solution evaporates in large quantities during the flight process, resulting in a small amount of perovskite solution reaching the substrate. After annealing, a loose perovskite film with holes is formed, forming a short-circuit battery.

[0072] Since the needle diameter of control sample 6 is smaller, the amount of liquid sprayed is smaller, which is insufficient to form a complete perovskite film, and a large number of voids are formed, resulting in a short-circuited battery.

[0073] The above description is only a preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily conceived by any technician familiar with the technical field within the technical scope disclosed by the present invention should be covered within the protection scope of the present invention.

Claims

1. A method for preparing a perovskite film on a large-size textured substrate, characterized in that: The method includes atomizing a perovskite precursor solution under an electric field to form a Taylor cone, spraying it on a large-sized velvet substrate, and heating and annealing to obtain a perovskite film.

2. A method for preparing a perovskite film on a large-size textured substrate according to claim 1, characterized in that: The height of the pyramids made of velvet in the large-size velvet substrate is 1-5 μm.

3. The method for preparing a perovskite film on a large-size textured substrate according to claim 1, characterized in that: The preparation of the perovskite film is carried out in an electrostatic spinning device, which includes a syringe, a needle tip and a base, and a voltage of 10-30 kV is applied between the needle tip and the base.

4. The method for preparing a perovskite film on a large-size textured substrate according to claim 1, characterized in that: Specifically, the positive electrode is fixed on the needle tip and the negative electrode is fixed on the base, the base is a rotating structure, the perovskite precursor solution is pushed out from the syringe at a uniform speed, a stable Taylor pile is obtained at the needle tip, and the solution flies and falls onto the large-sized velvet substrate on the base under the electric field, and after annealing, a perovskite film is formed.

5. The method for preparing a perovskite film on a large-size textured substrate according to claim 4, characterized in that: The uniform pushing speed is 0.005-0.035 mm / s, and the spraying time is 5-15 min.

6. The method for preparing a perovskite film on a large-size suede substrate according to claim 4, characterized in that: The inner diameter of the needle tip is 0.90 ~2.41 mm, and the vertical distance between the needle tip and the large-size velvet base is 5 ~35 cm.

7. The method for preparing a perovskite film on a large-size textured substrate according to claim 1, characterized in that: The heating annealing temperature is 80~140℃ and the time is 5~30min.

8. The method for preparing a perovskite film on a large-size textured substrate according to claim 1, characterized in that: Before spraying the large-size suede substrate, it was cleaned under ultraviolet light for 5 to 10 minutes.

9. A perovskite film prepared by the method according to any one of claims 1 to 8.

10. A perovskite cell comprising the perovskite film according to claim 9, characterized in that: The perovskite film is a light absorbing layer.

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