Infrared photoelectric memristor and preparation method thereof

Abstract

The invention relates to the technical field of photoelectric detection, in particular to an infrared photoelectric memristor and a preparation method thereof. Comprising the following steps: selecting a strontium titanate substrate for growing a first lead selenide film to obtain a strontium titanate substrate containing the first lead selenide film; and photoetching and sensitizing the first lead selenide film to obtain a pre-finished product containing a second lead selenide film, and preparing an electrode on the pre-finished product to obtain the infrared photoelectric memristor. Based on the preparation method and the infrared photoelectric memristor, a combined array of the infrared photoelectric memristor can be realized, and the expansibility is high. The infrared photoelectric memristor has a wide spectral response range, and can respond to the spectral range to cover visible light wave bands, short-wave infrared and medium-wave infrared. In addition, the device also has the characteristics of low power consumption and energy conservation, and the conductivity state of the device can be changed by introducing voltage pulses into the source and drain electrodes. The number of adjustable conductance states is large.

Description

Technical Field

[0001] The present invention relates to the field of photoelectric detection technology, and in particular to an infrared photoelectric memristor and a preparation method thereof. Background Art

[0002] Memristor is a nonlinear passive bipolar element with memory function, whose resistance value can change dynamically according to the amount of charge flowing through it. The core characteristics of memristor include nonlinear resistance change and memory function, which makes it have great potential in the field of information storage and computing. Especially in the context of the rapid development of artificial intelligence and the Internet of Things, memristor is considered to be one of the key technologies to break through the bottleneck of traditional von Neumann architecture.

[0003] Photoelectric memristor is an innovative device that combines optical signals with memristor characteristics and can regulate the conductivity state of the device through optical or electrical signals.

[0004] Existing photoelectric memristors have the following defects: (1) It is necessary to process both optical and electrical signals simultaneously, which increases the complexity of device design and operation and the manufacturing cost; (ii) The optical signal response band is mostly concentrated in the visible light band, and the performance is poor in some conditions with visible light noise interference or poor lighting; (3) The degree of integration is not high. Summary of the invention

[0005] The present invention aims to at least improve one of the technical problems existing in the prior art. To this end, the present invention provides an infrared photoelectric memristor and a preparation method thereof.

[0006] The technical solution of the present invention is as follows: A method for preparing an infrared photoelectric memristor, comprising: Selecting a strontium titanate substrate to grow a first lead selenide film to obtain a strontium titanate substrate containing the first lead selenide film; Performing photolithography and etching on the first lead selenide film to obtain a pre-finished product; defining a sensitized region, and selecting a first region at either end of the first lead selenide film as the sensitized region; Performing a sensitization treatment on the sensitized area of ​​the first lead selenide film to obtain a pre-finished product containing a second lead selenide film; Electrodes are prepared according to the pre-finished product containing the second lead selenide film to obtain an infrared photoelectric memristor. In a possible technical solution, further, the sensitization treatment includes photolithography development and introduction of oxygen plasma, specifically: After coating the first region with photoresist, performing photolithography development to obtain a pre-finished product of the sensitized region; The pre-finished product is placed in an etcher and oxygen plasma is introduced according to a first preset condition to complete the sensitization process, so as to ensure that the target area is sensitized while protecting the remaining areas.

[0007] In a possible technical solution, further, the channel length of the first lead selenide film after etching is 10nm to 20nm, so that the prepared infrared photoelectric memristor has high performance and low power consumption.

[0008] In a possible technical solution, further, the first preset condition includes: The etcher output power is 75W; The oxygen plasma treatment time is 600 s.

[0009] In a possible technical solution, further, photolithography etching the first lead selenide film further includes: Dropping photoresist on the first lead selenide film and coating it evenly using a coating machine to obtain a uniform film; Placing the uniform sheet on a heating device at a first temperature and heating for a first preset time to allow the photoresist to dry and stabilize; The uniform slice is subjected to photolithography exposure and development.

[0010] In a possible technical solution, further, photolithography etching of the first lead selenide film further includes argon plasma etching: placing the developed uniform slice in an etcher to perform argon plasma etching under a first preset condition to mechanically remove the remaining lead selenide film; The photoresist is removed from the slice after the argon plasma etching to obtain a pre-finished product.

[0011] In a possible technical solution, further, the electrode is a gold electrode with a thickness of 70nm to 90nm, which can ensure good electrical performance while controlling costs.

[0012] An infrared photoelectric memristor, wherein the infrared photoelectric memristor is prepared by the above method, and comprises: Strontium titanate substrate; A first lead selenide film is located on the surface of the strontium titanate substrate, and either end of the first lead selenide film is sensitized to obtain a second lead selenide film; Two gold electrodes, one of which is located on the surface of the second lead selenide film, and the other is located at the end of the first lead selenide film away from the second lead selenide film.

[0013] According to the infrared photoelectric memristor preparation method of the present invention, an infrared photoelectric memristor with a simple structure can be prepared. The infrared photoelectric memristor is a simple two-terminal structure. Based on the infrared photoelectric memristor of the present invention, a combination array of infrared photoelectric memristors can be realized, which has strong expandability. The infrared photoelectric memristor of the present invention has a wide spectral response range, and the spectral response range covers the visible light band, short-wave infrared, and medium-wave infrared. In addition, the present invention also has the characteristics of low power consumption and energy saving. The conductance state of the device can be changed by passing a voltage pulse through the source and drain. The present invention has a large number of adjustable conductance states, and the number of different conductance states that can be distinguished is greater than ten.

[0014] A computer device comprises a memory and a processor, wherein the memory stores a computer program, and the processor implements the above-mentioned method for preparing an infrared photoelectric memristor when executing the computer program.

[0015] A computer storage medium, wherein instructions are stored in the computer storage medium, and when the instructions are executed on a computer, the computer is caused to execute the above-mentioned infrared photoelectric memristor preparation method.

[0016] Additional aspects and advantages of the present invention will be given in part in the following description and in part will be obvious from the following description, or will be learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0018] Figure 1 is a flow chart of a method for preparing an infrared photoelectric memristor according to an embodiment of the present invention; Figure 2 is a schematic structural diagram of the preparation process of an infrared photoelectric memristor according to an embodiment of the present invention; Figure 3 Graph showing IV characteristics of the PbSe thin film infrared photoelectric memristor obtained by the preparation method of Example 1.

[0019] Figure 4 It is a graph of the It curve of the PbSe thin film infrared photoelectric memristor obtained by the preparation method of Example 1.

[0020] Figure 5 This is a test diagram of the switching stability of two conductivity states of the PbSe thin film infrared photoelectric memristor obtained based on the preparation method of Example 1.

[0021] Figure 6 These are test graphs of the switching stability of various conductance states of the PbSe thin film infrared photoelectric memristor obtained based on the preparation method of Example 1.

[0022] Figure 7 IV curves of two conductance states of the PbSe thin film infrared photoelectric memristor obtained by the preparation method of Example 1 under the presence or absence of 4um laser irradiation.

[0023] Reference numerals: Strontium titanate substrate 10, first lead selenide film 20, second lead selenide film 30, gold electrode 40. DETAILED DESCRIPTION

[0024] The embodiments of the present invention are described in detail below. The embodiments described with reference to the accompanying drawings are exemplary. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0025] It should be noted that when an element is referred to as being "fixed to" another element, it may be directly on the other element or there may be an intermediate element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be an intermediate element at the same time.

[0026] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which the present invention belongs. The terms used herein in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

[0027] The terms "first", "second", "third", etc. in the specification and claims of the present application and the drawings are used to distinguish different objects rather than to describe a specific order. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions. For example, a series of steps or units are included, or optionally, steps or units not listed are included, or optionally, other steps or units inherent to these processes, methods, products or devices are included.

[0028] Only the part relevant to the present application is shown in the accompanying drawings, but not all of the content. Before discussing the exemplary embodiments in more detail, it should be mentioned that some exemplary embodiments are described as processing or methods depicted as flow charts. Although the flow chart describes each operation (or step) as a sequential process, many of the operations therein can be implemented in parallel, concurrently or simultaneously. In addition, the order of each operation can be rearranged. When its operation is completed, the process can be terminated, but it can also have additional steps not included in the accompanying drawings. The process can correspond to a method, function, procedure, subroutine, subprogram, etc.

[0029] The terms "component", "module", "system", "unit", etc. used in this specification are used to represent computer-related entities, hardware, firmware, a combination of hardware and software, software, or software in execution. For example, a unit can be, but is not limited to, a process running on a processor, a processor, an object, an executable file, an execution thread, a program, and / or distributed between two or more computers. In addition, these units can be executed from various computer-readable media having various data structures stored thereon. Units can communicate through local and / or remote processes, for example, based on signals having one or more data packets (e.g., data from a second unit interacting with another unit in a local system, a distributed system, and / or a network. For example, the Internet interacts with other systems via signals).

[0030] Example 1 See also Figures 1 to 7 As shown, this embodiment provides a method for preparing an infrared photoelectric memristor, which includes: S1, selecting a strontium titanate substrate to grow a first lead selenide film to obtain a strontium titanate substrate containing a first lead selenide film. In this embodiment, a layer of ultra-thin PbSe film is grown on a strontium titanate substrate with a (100) crystal plane using a high vacuum chemical vapor deposition technique to obtain a strontium titanate substrate with a PbSe film, wherein the lattice coefficients of strontium titanate and lead selenide match, and are suitable for growing a lead selenide film; S2, performing photolithography etching on the first lead selenide film to obtain a pre-finished product, which is used to remove the interference of lead selenide in the remaining area to reserve the area to be sensitized; S3, defining a sensitized region, and selecting a first region at either end of the first lead selenide film as a sensitized region; S4, performing a sensitization treatment on the sensitized area of ​​the first lead selenide film to obtain a pre-finished product containing a second lead selenide film; S5, preparing an electrode according to the pre-finished product containing the second lead selenide film to obtain an infrared photoelectric memristor. It should be noted that the sensitization treatment includes photolithography development and introduction of oxygen plasma, specifically: After coating the first region with photoresist, performing photolithography development to obtain a pre-finished product of the sensitized region; The pre-finished product is placed in an etcher and oxygen plasma is introduced according to a first preset condition to complete the sensitization process, so as to ensure that the target area is sensitized while protecting the remaining areas.

[0031] It should be noted that the chemical vapor deposition includes the following steps: a strontium titanate substrate, 0.2 grams of lead selenide powder and 0.4 grams of selenium powder are placed in a chemical vapor deposition furnace in sequence, the positions of the strontium titanate substrate, lead selenide powder and selenium powder are adjusted, the furnace body of the chemical vapor deposition furnace is evacuated, and then argon gas is introduced, the gas flow rate is controlled to be 30 sccm, and heating is started. The heat treatment process is that the starting temperature is room temperature, the end temperature is 750°C, and the heating rate is ≤10°C / min. The temperature maintenance time is 5 minutes.

[0032] It should be noted that the first lead selenide film of the pre-finished product has a length of about 50 nm, a width of about 20 nm, and a channel length of 10 nm to 20 nm, so that the prepared infrared photoelectric memristor has high performance and low power consumption.

[0033] It should be noted that the size of the first region is about one third to one half of the surface area of ​​the first lead selenide film after etching, so as to facilitate the preparation of a more stable and reliable electrode.

[0034] It should be noted that the first preset condition is to set the power parameter of the etcher to 75W and the processing time of the oxygen plasma to 600s.

[0035] It should be noted that the photolithography etching of the first lead selenide film further includes: Dropping photoresist on the first lead selenide film and coating it evenly using a coating machine to obtain a uniform film; Placing the uniform sheet on a heating device at a first temperature and heating for a first preset time to allow the photoresist to dry and stabilize; The uniform slice is subjected to photolithography exposure and development.

[0036] It should be noted that the photolithography etching of the first lead selenide film also includes argon plasma etching: placing the developed uniform slice in an etcher to perform argon plasma etching under a first preset condition to mechanically remove the remaining lead selenide film; The photoresist is removed from the slice after the argon plasma etching to obtain a pre-finished product.

[0037] It should be noted that the electrode is a gold electrode with a thickness of 70nm to 90nm, which can ensure good electrical performance under the premise of controlling costs.

[0038] This embodiment provides a specific preparation process of a set of infrared photoelectric memristors based on lead selenide (PbSe) thin film, such as Figure 2 As shown, the preparation of the lead selenide thin film infrared photoelectric memristor includes the following steps: Step 1: growing a lead selenide film. Select a strontium titanate substrate and grow a lead selenide film on its surface. Along the flow direction of the carrier gas from upstream to downstream, 0.2g of lead selenide (concentration of 99.99%) was selected as the evaporation source material and placed in the center of a horizontal tube furnace with a diameter of 12 inches, and 0.4g of selenium powder was selected as the sulfur powder compensation source and placed in the front of the furnace; The purchased (100)-face strontium titanate substrate was placed at the end of the horizontal tube furnace, which was 10 cm away from the outlet of the horizontal tube furnace. After the horizontal tube furnace was sealed, a mechanical pump and a molecular pump were used to evacuate the horizontal tube furnace until the internal vacuum reached 110 -3 Pa, and the flow rate of the carrier gas was controlled to be 30 sccm. The heating temperature of the sulfur powder compensation source was set to 300°C, the heating temperature of the PbSe powder was set to 750°C, and the temperature of the strontium titanate substrate was set to 450°C; The time for the horizontal tube furnace to heat up from room temperature to the heating temperature of PbSe powder (750°C) is 75 minutes. After the vapor formed by the reaction source and selenium powder is transported to the surface of the strontium titanate substrate by the carrier gas for 5 minutes, the heating power of the horizontal tube furnace is cut off and the furnace body is naturally cooled to room temperature (the room temperature in this embodiment usually refers to 20°C to 25°C indoors) to obtain an ultra-thin PbSe film.

[0039] Step 2: Photolithography and etching into a small-sized rectangular PbSe film (at this time, the device array can be prepared). Specifically: Drop a proper amount of photoresist (model 5214) on the PbSe film and spread it evenly using a coating machine. The speed of the coating machine is set to 6000 rpm and the time is set to 1 minute. Then, place it on a heating table at 100 degrees and heat it for 60 seconds. Use a photolithography machine to perform photolithography exposure, and use NMD-3 developer to develop after photolithography, at which time the photoresist on the small-sized rectangular PbSe film is removed; Put it into the etcher and etch it using argon plasma. During etching, the output power of the etcher is set to 300 W and the time is 10 minutes.

[0040] The etched PbSe film was taken out, and the residual photoresist was removed using acetone to obtain a small-sized rectangular PbSe film.

[0041] Step 3: Perform sensitization treatment on one end of the PbSe film. Specifically: Repeat the photolithography development method in step 2 to remove the photoresist in the area that needs sensitization treatment, and then put it into the etcher for sensitization treatment using oxygen plasma. During the sensitization treatment, the output power of the etcher is set to 75 W and the time is 10 minutes. Take out the PbSe film after sensitization treatment, and use acetone to remove the residual photoresist to obtain a small-sized rectangular PbSe film sensitized at one end.

[0042] Step 4: Prepare electrodes at both ends of the surface of the small-sized rectangular PbSe film. Specifically: Drop a proper amount of photoresist (model LOR5A) on the surface of a small rectangular PbSe film sensitized at one end and perform a photoresist treatment; Place the small rectangular PbSe film after the photoresist treatment on a heating table at 160°C for 300 seconds, then drop a proper amount of photoresist (model 5214) on it and perform a second photoresist treatment; The small-sized rectangular PbSe film after the secondary coating treatment is placed on a heating table at a temperature of 100° C. and heated for 60 seconds; The small-sized rectangular PbSe film after secondary heating is subjected to photolithography exposure using a photolithography machine, and then the photoresist of the electrode regions designed at both ends is removed using a developer (model NMD-3); The sample with the photoresist removed from the electrode area is placed on an electron beam evaporation device to evaporate a gold electrode. After the evaporation is completed, the sample is taken out and the residual photoresist is removed using acetone to finally obtain a PbSe thin film infrared photoelectric memristor. In this embodiment, (the evaporation thickness of the gold electrode is preferably 80nm).

[0043] The performance of the PbSe thin film infrared photoelectric memristor prepared by the preparation method of this embodiment was tested, and the test results Figures 3 to 7 As shown: Figure 3 : is the IV characteristic curve of the PbSe thin film infrared photoelectric memristor obtained by the preparation method in this example. It can be shown from the figure that the PbSe thin film of the infrared photoelectric memristor has memristive characteristics.

[0044] Figure 4 The It curve of the PbSe thin film infrared photoelectric memristor obtained by the preparation method in this example is shown in Figure 2. The stability of the same infrared photoelectric memristor in two different conductance states is tested. The two different conductance states of the device are read by applying a bias voltage of 0.05V. Figure 4 As shown, the two conductance states of the device are relatively stable within 1000s.

[0045] Figure 5In this example, the switching stability of the two conductance states of the PbSe thin film infrared photoelectric memristor obtained by the preparation method was tested. The conductance state of the device was switched back and forth by alternately applying positive and negative voltage pulses, where the read voltage was 0.05V.

[0046] Figure 6 This is a test of the switching stability of multiple conductivity states of the PbSe thin film infrared photoelectric memristor obtained by the preparation method in this example. By repeatedly applying positive voltage pulses (voltage value 1.5V, interval 0.1S), multiple increasing conductivity states are obtained, where each rising dot in the figure corresponds to a conductivity state. It can be seen from the figure that the number of different conductivity states that can be distinguished is greater than ten; then by repeatedly applying negative voltage pulses, multiple decreasing conductivity states are obtained. The horizontal axis represents the number of pulses, the equilateral triangle represents the application of positive voltage pulses, the inverted triangle represents the application of negative voltage pulses, and the reading voltage is 0.05V.

[0047] Figure 7 The IV curves of the two conductance states of the PbSe thin film infrared photoelectric memristor obtained by the preparation method in this example with and without 4um laser irradiation are shown in Figure 1. The dotted line in the figure represents the dark environment without 4um laser irradiation, and the solid line represents the situation with 4um laser irradiation, where the circle represents the low resistance state and the square represents the high resistance state.

[0048] In summary, according to the method for preparing an infrared photoelectric memristor according to an embodiment of the present invention, an infrared photoelectric memristor with a simple structure can be prepared. The infrared photoelectric memristor is a simple two-terminal structure. Based on the infrared photoelectric memristor of the present invention, a combination array of infrared photoelectric memristors can be realized, which has strong expandability. The infrared photoelectric memristor of the present invention has a wide spectral response range, and its responsive spectral range covers the visible light band, short-wave infrared, and medium-wave infrared. In addition, the present invention also has the characteristics of low power consumption and energy saving. A voltage pulse of 1.5 V and 0.1 s can be passed through the source and drain to change the conductivity state of the device. The present invention has a large number of adjustable conductivity states, and the number of different conductivity states that can be distinguished is greater than ten.

[0049] Example 2 This embodiment provides an infrared photoelectric memristor, wherein the infrared photoelectric memristor is prepared by the above method, and includes: Strontium titanate substrate 10; A first lead selenide film 20, located on the surface of the strontium titanate substrate 10, wherein either end of the first lead selenide film 20 is sensitized to obtain a second lead selenide film 30; There are two gold electrodes 40 , one of which is located on the surface of the second lead selenide film 30 , and the other is located at the end of the first lead selenide film 20 away from the second lead selenide film 30 .

[0050] According to the method for preparing an infrared photoelectric memristor of an embodiment of the present invention, an infrared photoelectric memristor with a simple structure can be prepared. The infrared photoelectric memristor is a simple two-terminal structure. Based on the infrared photoelectric memristor of the present invention, a combination array of infrared photoelectric memristors can be realized, which has strong expandability. The infrared photoelectric memristor of the present invention has a wide spectral response range, and the spectral response range covers the visible light band, short-wave infrared, and medium-wave infrared. In addition, the present invention also has the characteristics of low power consumption and energy saving. A voltage pulse of 1.5 V and 0.1 s can be passed through the source and drain to change the conductivity state of the device. The present invention has a large number of adjustable conductivity states, and the number of different conductivity states that can be distinguished is greater than ten.

[0051] Example 3 This embodiment provides a computer device, which includes a memory and a processor, wherein the memory stores a computer program, and when the processor executes the computer program, each process of the infrared photoelectric memristor preparation method as described above is implemented, and to avoid repetition, it is not described again here.

[0052] The computer device in this embodiment may also be a component, an integrated circuit, or a chip in a terminal. The device may be a mobile electronic device or a non-mobile electronic device. For example, the mobile electronic device may be a mobile phone, a tablet computer, a laptop computer, a PDA, an ultra-mobile personal computer (UMPC), a netbook, or a personal digital assistant (PDA), etc., and the non-mobile electronic device may be a server, a network attached storage (NAS), etc., which is not specifically limited in the embodiments of the present application.

[0053] Example 4 This embodiment provides a computer storage medium, wherein the computer storage medium stores instructions, and when the instructions are executed on a computer, the computer executes the infrared photoelectric memristor preparation method as described above. The computer storage medium is a computer readable storage medium, such as a computer read-only memory (ROM), a random access memory (RAM), a magnetic disk or an optical disk, etc.

[0054] In the description of the present invention, it is to be understood that the terms “center”, “longitudinal”, “lateral”, “length”, “width”, “thickness”, “up”, “down”, “front”, “back”, “left”, “right”, “vertical”, “horizontal”, “top”, “bottom”, “inside”, “outside”, “clockwise”, “counterclockwise”, “axial”, “radial”, “circumferential”, etc., indicating orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation to the invention.

[0055] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example.

[0056] Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Mentioning "embodiment" in this article means that the specific features, structures or characteristics described in conjunction with the embodiment may be included in at least one embodiment of the present embodiment application. The appearance of this phrase in various positions in the specification is not necessarily the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It can be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application.

[0057] Although the embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the claims and their equivalents.

Claims

1. A method for preparing an infrared photoelectric memristor, characterized in that: include: Selecting a strontium titanate substrate to grow a first lead selenide film to obtain a strontium titanate substrate containing the first lead selenide film; Performing photolithography and etching on the first lead selenide film to obtain a pre-finished product; defining a sensitized region, and selecting a first region at either end of the first lead selenide film as the sensitized region; Performing a sensitization treatment on the sensitized area to obtain a pre-finished product containing a second lead selenide film; Electrodes are prepared according to the pre-finished product containing the second lead selenide film to obtain an infrared photoelectric memristor.

2. The method for preparing an infrared photoelectric memristor according to claim 1, characterized in that: The sensitization treatment includes photolithography development and introduction of oxygen plasma, specifically: After coating the first region with photoresist, performing photolithography development to obtain a pre-finished product of the sensitized region; The pre-finished product is placed in an etcher and oxygen plasma is introduced according to a first preset condition to complete a sensitization process.

3. The method for preparing an infrared photoelectric memristor according to claim 2, characterized in that: The channel length of the first lead selenide film after etching is 10nm to 20nm.

4. The method for preparing an infrared photoelectric memristor according to claim 2, characterized in that: The first preset condition includes: The etcher output power is 75W; The oxygen plasma treatment time is 600 s.

5. The method for preparing an infrared photoelectric memristor according to claim 3, characterized in that: Photolithography etching the first lead selenide film further includes: Dropping photoresist on the first lead selenide film and coating it evenly to obtain a uniform film; Placing the uniform slice on a heating device at a first temperature and heating for a first pre-preparation time; The uniform slice is subjected to photolithography exposure and development.

6. The method for preparing an infrared photoelectric memristor according to claim 5, characterized in that: The photolithography etching of the first lead selenide film further includes argon plasma etching: Placing the developed uniform slice in an etcher to perform argon plasma etching under a first preset condition; The photoresist is removed from the slice after the argon plasma etching to obtain a pre-finished product.

7. The method for preparing an infrared photoelectric memristor according to claim 1, characterized in that: The electrode is a gold electrode with a thickness of 70nm to 90nm.

8. An infrared photoelectric memristor, characterized in that: Prepared by the method according to any one of claims 1 to 7, the infrared photoelectric memristor comprises: Strontium titanate substrate; A first lead selenide film is located on the surface of the strontium titanate substrate, and either end of the first lead selenide film is sensitized to obtain a second lead selenide film; Two gold electrodes, one of which is located on the surface of the second lead selenide film, and the other is located at the end of the first lead selenide film away from the second lead selenide film.

9. A computer device, characterized in that: The method comprises a memory and a processor, wherein the memory stores a computer program, and the processor implements the infrared photoelectric memristor preparation method according to any one of claims 1 to 7 when executing the computer program.

10. A computer storage medium, characterized in that: The computer storage medium stores instructions, and when the instructions are executed on a computer, the computer executes the infrared photoelectric memristor preparation method according to any one of claims 1 to 7.

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