Halogen resistant thermal barrier coatings for processing chambers

Abstract

A coating on a process chamber component includes a metallic bond layer deposited on a surface of the component. A thermal barrier layer is deposited on the bonding layer. A substantially non-porous ceramic sealing layer is deposited on the thermal barrier layer. The sealing layer is substantially conformable to irregularities of the surface of the thermal barrier layer. The chemical composition of the sealing layer is selected to resist erosion from halogen-containing chemicals.

Description

Technical Field

[0001] Embodiments of the present disclosure generally relate to chambers for processing substrates, such as in the manufacture of electronic devices. In particular, the present disclosure relates to coatings applied to chamber components. The coatings hinder heat transfer to chamber components and provide corrosion and erosion protection. Background Art

[0002] The processing of substrates is typically performed in a chamber where the substrates are exposed to heat and reactive chemicals. In some processing operations, the chemicals may be in the form of plasma. Cleaning operations typically involve exposing the processing chamber to corrosive chemicals, such as hydrochloric acid, at elevated temperatures. The processing and cleaning environments (including corrosive chemicals and plasma) may be harmful to the processing chamber and auxiliary equipment in the processing chamber. Additionally, temperature gradients on the substrate undergoing processing (such as caused by heat transfer through the walls of the processing chamber) may adversely affect the uniformity of material deposition on the substrate, and therefore affect the quality of the finished product.

[0003] Therefore, there is a need for improved systems and processes that alleviate the above-mentioned problems. Summary of the invention

[0004] The present disclosure relates to coatings for components used in chambers for processing substrates. In one implementation, a substrate processing chamber component includes a metal body. The component includes a metal bonding layer, which is deposited on a surface of the metal body. The component further includes: a thermal barrier layer, which is deposited on the bonding layer, and a substantially non-porous ceramic sealing layer, which is deposited on the thermal barrier layer.

[0005] In another implementation, a substrate processing chamber component includes a body, the body comprising stainless steel. The component includes a metal bonding layer, the metal bonding layer having a first thickness, the metal bonding layer being deposited on a surface of the body. The bonding layer has a corrosion resistance to halogen-containing chemicals that is greater than the corrosion resistance of the body to halogen-containing chemicals. The component further includes a thermal barrier layer, the thermal barrier layer having a second thickness, the thermal barrier layer being deposited on the bonding layer. The second thickness is greater than the first thickness. The component further includes a substantially non-porous ceramic sealing layer, the substantially non-porous ceramic sealing layer having a third thickness, the substantially non-porous ceramic sealing layer being deposited on the thermal barrier layer. The third thickness is less than the first thickness.

[0006] In another implementation, a substrate processing chamber component includes a metal body. The component includes: a metal bonding layer, the metal bonding layer is deposited on a surface of the metal body, a thermal barrier layer, the thermal barrier layer is deposited on the bonding layer, and a ceramic sealing layer, the ceramic sealing layer is deposited on the thermal barrier layer. The ceramic sealing layer includes: a first sublayer, the first sublayer includes a first ceramic, a second sublayer, the second sublayer includes a second ceramic, and a third sublayer, the third sublayer includes a third ceramic. The second ceramic has a different chemical composition than the first ceramic and the third ceramic. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] In order to be able to understand in detail the manner in which the above-mentioned features of the present disclosure are achieved, a more particular description of the present disclosure briefly outlined above may be made by reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings illustrate only exemplary embodiments and are therefore not to be considered as limiting the scope of the present disclosure, as the present disclosure may allow for other equally effective embodiments.

[0008] Figure 1 A processing chamber is schematically depicted.

[0009] Figure 2 The schematic diagram shows the Figure 1 Aspects of coating of one or more components of a process chamber.

[0010] Figure 3 Schematically depicted Figure 2 Embodiment of a portion of a coating.

[0011] FIG. 4A to FIG. 4C Schematically depicted Figure 2 Embodiment of a portion of a coating.

[0012] Figure 4D and Figure 4E Schematically depicted is how the morphology, porosity, and magnitude of open porosity of a ceramic layer can be related to the technique used to deposit the ceramic.

[0013] Figure 4F and Figure 4G Schematically depicted Figure 2 Embodiment of a portion of a coating.

[0014] FIG. 5A to FIG. 5E Schematically depicted Figure 2 Embodiment of a portion of a coating.

[0015] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation. DETAILED DESCRIPTION

[0016] The present disclosure relates to chambers for processing substrates, such as in the manufacture of electronic devices. More particularly, the present disclosure relates to coatings suitable for chamber components, such as chamber walls, susceptor supports, gas delivery accessories, gas exhaust accessories, etc. The coatings hinder heat transfer to chamber components and provide corrosion and erosion protection.

[0017] Figure 1 The processing chamber 100 is schematically depicted. The processing chamber 100 includes an upper heating module 180 above a chamber body 170 and a lower heating module 190 below the chamber body 170.

[0018] The processing chamber 100 can be a processing chamber for performing any thermal process, such as an epitaxial process. It is contemplated that the processing chamber 100 can be used to process a substrate, including depositing a material on a surface of the substrate. It is contemplated that although a processing chamber for an epitaxial process is illustrated and described, the concepts of the present disclosure are also applicable to other processing chambers capable of providing controlled thermal cycles that heat a substrate for processes such as, for example, thermal annealing, thermal cleaning, thermal chemical vapor deposition, thermal oxidation, and thermal nitridation. It is further contemplated that embodiments of the present disclosure can be applied to components of other types of processing chambers, such as processing chambers configured to perform processing operations involving plasma, such as etching and / or plasma enhanced chemical vapor deposition.

[0019] Reference Figure 1 , the chamber body 170 includes an upper window 120 and a lower window 130, and the processing space 140 is located between the upper window 120 and the lower window 130. The processing space 140 is substantially cylindrical. The upper window 120 includes a base 125 fixed in the chamber body 170, and the lower window 130 includes a base 135 fixed in the chamber body 170. The neck 132 coupled to the lower window 130 is arranged around the shaft 154 of the base support 152. The base support 152 carries the base 150, and the substrate 110 can be positioned on the base 150 in the processing space 140.

[0020] It is contemplated that the susceptor 150 may be made of graphite coated with silicon carbide. A motor (not shown) rotates the shaft 154 of the susceptor support 152 about the longitudinal axis of the shaft 154 and, therefore, the susceptor 150 and the substrate 110. The substrate 110 is brought into the chamber body 170 via the load port 160 and positioned on the susceptor 150.

[0021] The processing chamber 100 includes one or more gas inlets 162. Each gas inlet 162 includes a nozzle 164. The processing chamber 100 includes one or more gas exhaust fittings 166. The processing chamber 100 includes one or more liners 168 within the processing volume 140.

[0022] One or more components of the processing chamber 100 that are exposed in the processing space 140 are coated with the coating 200. It is contemplated that the coating 200 may be applied to metal components of the processing chamber 100 that are exposed in the processing space 140. Examples of metal components that may be coated with the coating 200 include the walls of the chamber body 170, the susceptor support 152, the shaft 154, the one or more gas inlets 162, the one or more nozzles 164, the one or more gas exhaust fittings 166, the liner 168, etc. In some embodiments, the base 125 of the upper window 120 and / or the base 135 of the lower window 130 include metal components that may be coated with the coating 200.

[0023] In other processing chambers, such as those configured to perform processing operations involving plasma, exemplary metal parts that may be coated with coating 200 include chamber body floors, lids, and walls; substrate support structures; liners; gas exhaust accessories; and gas delivery accessories, such as showerheads, gas distribution plates, plenum walls, and the like.

[0024] Figure 2 Aspects of coating 200 are schematically depicted in cross-section. Figure 2 The coating 200 is illustrated as being applied to the surface 104 of the metal body 102. The metal body 102 represents any metal structure, such as described above, which may be part of or used within a processing chamber, such as the processing chamber 100. Examples of metals on which the coating 200 may be applied include aluminum and steel, such as stainless steel, such as 316L.

[0025] The thickness 202 of the coating 200 is from about 0.5 mm to about 10 mm. For example, the thickness 202 of the coating 200 can be from 1 mm to 10 mm, such as 1.5 mm to 10 mm, 1.5 mm to 9 mm, 1.5 mm to 8 mm, 2 mm to 8 mm, 2.5 mm to 8 mm, 2.5 mm to 7 mm, 3 mm to 7 mm, 3.5 mm to 7 mm, 3.5 mm to 6 mm, 4 mm to 6 mm, 4.5 mm to 6 mm, or 5 mm to 6 mm. Other thicknesses are also contemplated.

[0026] The coating 200 includes three layers: a bonding layer 210 on the surface 104 of the metal body 102 , a thermal barrier layer 220 on the bonding layer 210 , and a sealing layer 280 on the thermal barrier layer 220 .

[0027] The bonding layer 210 is metallic. In some embodiments that can be combined with other embodiments, the bonding layer 210 is a pure metal, such as pure nickel or pure titanium. It is envisioned that the pure metal may have a purity of at least 99%, such as at least 99.5%, at least 99.6%, at least 99.7%, at least 99.8% or at least 99.9%. In some embodiments, the bonding layer 210 is an alloy, such as a cobalt-based alloy, an iron-based alloy, a nickel-based alloy or a titanium-based alloy. In some embodiments, the bonding layer 210 comprises a composite of ceramic particles distributed in a metal matrix. In an example, the metal matrix is ​​nickel and the ceramic particles are metal oxides. In some embodiments, ceramic particles are added to the metal matrix to adjust the thermal expansion coefficient of the bonding layer 210. In some embodiments, ceramic particles are added to the metal matrix to promote bonding of the bonding layer 210 to the thermal barrier layer 220.

[0028] In some embodiments, which may be combined with other embodiments, the metal of the bonding layer 210 is selected at least in part based on that a thermally grown oxide layer will form on the bonding layer 210 during use of the metal body 102 when processing a substrate, such as the substrate 110. In some embodiments, which may be combined with other embodiments, the metal of the bonding layer 210 is selected at least in part based on that a thermally grown oxide layer will not form on the bonding layer 210 during use of the metal body 102 when processing a substrate, such as the substrate 110.

[0029] The corrosion resistance of the bonding layer 210 to halogen-containing chemicals is greater than that of the metal body 102. Examples of such halogen-containing chemicals include hydrohalic acids (e.g., hydrochloric acid, hydrofluoric acid, etc.), halogen gases (e.g., chlorine, fluorine, bromine, chlorofluoride, etc.), gaseous halides (e.g., chlorine trifluoride, carbon tetrafluoride, nitrogen trifluoride, etc.), and plasmas containing such hydrohalic acids, halogen gases, or gaseous halides.

[0030] In some embodiments, which may be combined with other embodiments, the thermal expansion coefficient of the bonding layer 210 is less than the thermal expansion coefficient of the metal body 102, and greater than or equal to the thermal expansion coefficient of the thermal barrier layer 220. In an example, the thermal expansion coefficient of the bonding layer 210 is greater than or equal to the thermal expansion coefficient of a portion of the thermal barrier layer 220 adjacent to the bonding layer 210.

[0031] The thickness 212 of the bonding layer 210 is from about 50 microns to about 500 microns. For example, the thickness 212 of the bonding layer 210 can be from 50 microns to 450 microns, such as 50 microns to 400 microns, 50 microns to 300 microns, 50 microns to 200 microns, or 50 microns to 100 microns. Other thicknesses are also contemplated.

[0032] The bonding layer 210 can be substantially non-porous. In an example, the bonding layer 210 has a porosity of 0.1% or less, such as 0.05% or less, 0.01% or less, or 0%. In some embodiments that can be combined with other embodiments, the bonding layer 210 has a porosity greater than 0.1%, such as up to 10%. In an example, the bonding layer 210 has a porosity of 0.5% to 10%, such as 1% to 9%, 1.5% to 8%, 2% to 7%, 2.5% to 6% or 3% to 5%. In some embodiments that can be combined with other embodiments, the bonding layer 210 has a porosity that increases with the surface 104 away from the metal body 102. In an example, the bonding layer 210 has a porosity of 0.1% or less at the surface 104, and the porosity increases to 3% away from the surface 104.

[0033] The bonding layer 210 is deposited onto the surface 104 of the metal body 102 by a thermal spraying technique, such as air plasma spray (APS) or high velocity oxy-fuel spray. In some embodiments, which may be combined with other embodiments, the bonding layer 210 is deposited onto the surface 104 as a single layer. However, in some embodiments, the bonding layer 210 is deposited onto the surface 104 as a plurality of sub-layers. For example, Figure 3 Schematically illustrated in FIG. 2 , in some embodiments, the bonding layer 210 includes a first sublayer 216 on the surface 104 of the metal body 102 and a second sublayer 218 on the first sublayer 216. In some embodiments, the first sublayer 216 and the second sublayer 218 are formed by the same thermal spraying technique. In some embodiments, the first sublayer 216 and the second sublayer 218 are formed by different thermal spraying techniques.

[0034] The first sublayer 216 and the second sublayer 218 may be formed of the same metal. Alternatively, the first sublayer 216 and the second sublayer 218 may not be formed of the same metal. In an example, the first sublayer 216 may be formed of pure nickel, while the second sublayer 218 may be formed of a nickel-based alloy.

[0035] In some embodiments, which may be combined with other embodiments, the first sublayer 216 has substantially the same porosity as the second sublayer 218. Alternatively, the first sublayer 216 does not have the same porosity as the second sublayer 218. In an example, the first sublayer 216 may be substantially non-porous and the second sublayer 218 may have a porosity greater than 0.1%, such as described above.

[0036] return Figure 2, the thermal barrier layer 220 is on the surface 214 of the bonding layer 210. The thermal barrier layer 220 includes a ceramic material. The ceramic material includes one or more of a metal oxide, a metal nitride, a metal oxynitride, or a metal oxycarbide. It is contemplated that such compounds include corresponding metalloid compounds, such as silicon oxide, etc. Exemplary ceramic materials of the thermal barrier layer 220 include magnesium silicate, zirconium oxide, yttria-stabilized zirconia, hafnia, gadolinia-stabilized hafnia, rare-earth zirconate, and silicon oxynitride.

[0037] The thickness 222 of the thermal barrier layer 220 is from about 0.5 mm to about 10 mm. For example, the thickness 222 of the thermal barrier layer 220 can be from 1 mm to 10 mm, such as 1.5 mm to 10 mm, 1.5 mm to 9 mm, 1.5 mm to 8 mm, 2 mm to 8 mm, 2.5 mm to 8 mm, 2.5 mm to 7 mm, 3 mm to 7 mm, 3.5 mm to 7 mm, 3.5 mm to 6 mm, 4 mm to 6 mm, 4.5 mm to 6 mm, or 5 mm to 6 mm.

[0038] The thermal barrier layer 220 has an overall thermal conductivity less than or equal to 20 W / mK. For example, the overall thermal conductivity of the thermal barrier layer 220 may be less than or equal to 18 W / mK, 16 W / mK, 14 W / mK, 12 W / mK, 10 W / mK, 8 W / mK, 6 W / mK, or 4 W / mK. In addition, the overall thermal conductivity of the thermal barrier layer 220 may be 0.5 W / mK to 20 W / mK, such as 1 W / mK to 20 W / mK, 2 W / mK to 20 W / mK, 3 W / mK to 18 W / mK, 4 W / mK to 16 W / mK, 5 W / mK to 14 W / mK, 6 W / mK to 12 W / mK, or 7 W / mK to 10 W / mK.

[0039] The thermal barrier layer 220 is deposited onto the surface 214 of the bonding layer 210 by a thermal spraying technique, such as APS. It is contemplated that the thermal barrier layer 220 may additionally or alternatively be deposited onto the surface 214 of the bonding layer 210 by a vapor deposition technique, such as electron beam physical vapor deposition (EB-PVD). In some embodiments, which may be combined with other embodiments, the thermal barrier layer 220 is deposited onto the surface 214 of the bonding layer 210 by a thermal spraying technique in combination with a vapor deposition technique.

[0040] The thermal barrier layer 220 is deposited onto the surface 214 of the bonding layer 210 as a single layer. Alternatively, in some embodiments that may be combined with other embodiments, the thermal barrier layer 220 is deposited onto the surface 214 of the bonding layer 210 in the form of multiple sublayers. In some embodiments, the single layer or any one or more of the multiple sublayers may have a uniform composition. The single layer or any one or more of the multiple sublayers may have a uniform morphology. Alternatively, the single layer or any one or more of the multiple sublayers may be single-phase. The single layer or any one or more of the multiple sublayers may be doped with a secondary ceramic, such as silicon oxide or hafnium oxide. In some embodiments that may be combined with other embodiments, the single layer or any one or more of the multiple sublayers may be undoped.

[0041] A single layer or any one or more of the multiple sub-layers may be functionally graded. Figure 4A An exemplary functional gradient layer is schematically depicted. Layer 230 represents a single layer or sublayer of thermal barrier layer 220. Layer 230 contains pores 232. In a first portion 234 of layer 230, pores 232 are more numerous and / or larger than pores 232 in a second portion 236 of layer 230. Porosity varies from a higher magnitude in first portion 234 to a lower magnitude in second portion 236. The position of first portion 234 differs from the position of second portion 236 in being close to surface 104 of metal body 102. In an example, second portion 236 is further away from surface 104 of metal body 102 than first portion 234. Alternatively, first portion 234 may be further away from surface 104 of metal body 102 than second portion 236.

[0042] Figure 4B Another exemplary functionally graded layer is schematically depicted. Layer 240 is a compositionally graded layer that represents a single layer or sublayer of thermal barrier layer 220. Layer 240 is a single-phase ceramic that includes a first ceramic material 242 doped with a second ceramic material 244. An example single-phase ceramic is yttria-stabilized zirconia (YSZ), where the first ceramic material 242 is zirconia and the second ceramic material is yttria 244. In a first portion 246 of layer 240, the proportion of second ceramic material 244 is greater than in a second portion 248 of layer 240. In the example of YSZ, the proportion of yttria in first portion 246 may be from about 8% to about 20%, while the proportion of yttria in second portion 248 may be from about 0% to about 8%. Second portion 248 is further away from surface 104 of metal body 102 than first portion 246. Alternatively, first portion 246 may be further away from surface 104 of metal body 102 than second portion 248.

[0043] Figure 4CAnother exemplary functionally gradient layer is schematically depicted, wherein the thermal barrier layer 220 includes a plurality of sublayers in the form of a laminated ceramic structure 225. Although only two sublayers are illustrated, it is contemplated that the laminated ceramic structure 225 of the thermal barrier layer 220 may include three, four, five, six, seven, or more sublayers. When there are more than two sublayers, it is contemplated that any two sublayers may have the same chemical composition, porosity, porosity distribution, or morphology. It is further contemplated that the laminated ceramic structure 225 of the thermal barrier layer 220 may include a repeating pattern of multiple pairs of two sublayers. In such examples, it is further contemplated that any pair of two sublayers may have the same chemical composition, porosity, porosity distribution, or morphology.

[0044] like Figure 4C As shown, the laminated ceramic structure 225 of the thermal barrier layer 220 includes a first sublayer 226 on the surface 214 of the bonding layer 210 and a second sublayer 228 on the first sublayer 226. Each of the first sublayer 226 and the second sublayer 228 is made of a ceramic material. The first sublayer 226 and the second sublayer 228 may have the same chemical composition. The first sublayer 226 and the second sublayer 228 may be formed by the same deposition technology or by different deposition technologies. The ceramic of the first sublayer 226 may be different from the ceramic of the second sublayer 228 in at least one of the following: chemical composition, porosity, magnitude or morphology of open porosity.

[0045] Figure 4D and Figure 4E Schematically depicts how the morphology, porosity, and magnitude of open porosity of a ceramic layer may be related to the technique used to deposit the ceramic. Figure 4D 258 by APS. Many pores 232 are surrounded by grains 254 of the ceramic material 252; most of the pore volume is represented as so-called "closed porosity". Only a few pores 232 are open to the exposed surface 256 of the ceramic material 252; compared to the closed porosity, the less pore volume is represented as so-called "open porosity".

[0046] Figure 4E 268 is a representation of a micrograph of a ceramic material 262 deposited by EB-PVD onto a surface 268. Only a few pores 232 are surrounded by grains 264 of the ceramic material 262; the majority of the pore volume is represented as open porosity. Many pores 232 are open to an exposed surface 266 of the ceramic material 262; a smaller pore volume than the open porosity is represented as closed porosity.

[0047] Figure 4D and Figure 4E shows an example where Figure 4DThe morphology of ceramic material 252 is different from Figure 4E The morphology of the ceramic material 262. Figure 4D In the embodiment of the present invention, the grains 254 of the ceramic material 252 tend to be substantially parallel to the surface 258 (on which the ceramic material 252 is deposited). Figure 4D In contrast to ceramic materials 252, Figure 4E Grains 264 of ceramic material 262 in the matrix tend to be substantially perpendicular to surface 268 (on which ceramic material 262 is deposited).

[0048] Further return reference Figure 4C As described above, in embodiments where the ceramic of the first sub-layer 226 is different from the ceramic of the second sub-layer 228, it is contemplated that one deposition technique may be used to deposit the first sub-layer 226, while a different deposition technique may be used to deposit the second sub-layer 228. For example, the first sub-layer 226 may be deposited using one of APS or EB-PVD, while the second sub-layer 228 may be deposited using the other of APS or EB-PVD.

[0049] Figure 4F and Figure 4G An example is schematically depicted in which the thermal barrier layer 220 includes a laminated metal-ceramic structure 270, 270'. Figure 4F , a first ceramic sublayer 271 is deposited on the surface 214 of the bonding layer 210. A first metal sublayer 272 is deposited on the first ceramic sublayer 271. A second ceramic sublayer 273 is deposited on the first metal sublayer 272. The first ceramic sublayer 271 and the second ceramic sublayer 273 may have the same chemical composition. The first ceramic sublayer 271 and the second ceramic sublayer 273 may be formed by the same deposition technique or different deposition techniques. In some embodiments that may be combined with other embodiments, the first ceramic sublayer 271 and the second ceramic sublayer 273 differ in at least one of the following: chemical composition, porosity, magnitude or morphology of open porosity.

[0050] In some embodiments that may be combined with other embodiments, the first metal sublayer 272 has a chemical composition similar to the bonding layer 210. In some embodiments, the first metal sublayer 272 has a structure similar to the bonding layer 210. In one example, the first metal sublayer 272 is a pure metal, such as pure nickel or pure titanium. It is contemplated that the pure metal may have a purity of at least 99%, such as at least 99.5%, at least 99.6%, at least 99.7%, at least 99.8%, or at least 99.9%. In some embodiments that may be combined with other embodiments, the first metal sublayer 272 is an alloy, such as a cobalt-based alloy, an iron-based alloy, a nickel-based alloy, or a titanium-based alloy. The metal of the first metal sublayer 272 is selected at least in part based on the fact that a thermally grown oxide layer will be formed on the first metal sublayer 272 during use of the metal body 102 when processing a substrate (such as the substrate 110). Alternatively, the metal of first metal sub-layer 272 may be selected based at least in part on the fact that a thermally grown oxide layer will not form on first metal sub-layer 272 during use of metal body 102 when processing a substrate, such as substrate 110 .

[0051] exist Figure 4G In the embodiment, the laminated metal-ceramic structure 270' includes a Figure 4F An additional sublayer on the laminated metal-ceramic structure 270. Figure 4G The second metal sublayer 274 is shown deposited on the second ceramic sublayer 273. The third ceramic sublayer 275 is deposited on the second metal sublayer 274. In some embodiments that can be combined with other embodiments, the third ceramic sublayer 275 has the same chemical composition as at least one of the first ceramic sublayer 271 or the second ceramic sublayer 273. The third ceramic sublayer 275 and at least one of the first ceramic sublayer 271 or the second ceramic sublayer 273 are formed by the same deposition technique or by different deposition techniques. In some embodiments that can be combined with other embodiments, the third ceramic sublayer 275 is different from the first ceramic sublayer 271 in at least one of the following: chemical composition, porosity, magnitude of open porosity, or morphology. In some embodiments, the third ceramic sublayer 275 is different from the second ceramic sublayer 273 in at least one of the following: chemical composition, porosity, magnitude of open porosity, or morphology.

[0052] The second metal sublayer 274 may have a chemical composition or structure similar to the bonding layer 210. Additionally or alternatively, the second metal sublayer 274 has a chemical composition similar to the first metal sublayer 272, and / or the second metal sublayer 274 has a structure similar to the first metal sublayer 272. The second metal sublayer 274 is a pure metal, such as pure nickel or pure titanium. It is contemplated that the pure metal may have a purity of at least 99%, such as at least 99.5%, at least 99.6%, at least 99.7%, at least 99.8%, or at least 99.9%. Alternatively, the second metal sublayer 274 may be an alloy, such as a cobalt-based alloy, an iron-based alloy, a nickel-based alloy, or a titanium-based alloy. The metal of the second metal sublayer 274 is selected at least in part based on the fact that a thermally grown oxide layer will be formed on the second metal sublayer 274 during use of the metal body 102 when processing a substrate (such as the substrate 110). However, the metal of second metal sub-layer 274 may be selected based at least in part on the fact that a thermally grown oxide layer will not form on second metal sub-layer 274 during use of metal body 102 when processing a substrate, such as substrate 110 .

[0053] Assumption Figure 4G The laminated metal-ceramic structure 270' may include further additional metal and ceramic sub-layers. In an example, the laminated metal-ceramic structure 270' includes one or more pairs of additional sub-layers on top of the third ceramic sub-layer 275, each pair including a metal sub-layer and a ceramic sub-layer on top of the metal sub-layer.

[0054] return Figure 2 , the sealing layer 280 is on the surface 224 of the thermal barrier layer 220. The sealing layer 280 inhibits the entry of chemicals (such as gases) into the pores 232 of the thermal barrier layer 220. The sealing layer 280 includes a ceramic material. The ceramic material includes one or more of a metal oxide, a metal fluoride, or a metal oxyfluoride. It is contemplated that such compounds include corresponding metalloid compounds, such as silicon oxide, etc. Exemplary ceramic materials of the sealing layer 280 include silicon dioxide, hafnium oxide, zirconium oxide, yttrium oxide, magnesium fluoride, yttrium fluoride, lanthanum fluoride, and yttrium oxyfluoride.

[0055] Sealing layer 280 resists chemical attack by halogen-containing chemicals. Examples of such halogen-containing chemicals include hydrohalic acids (e.g., hydrochloric acid, hydrofluoric acid, etc.), halogen gases (e.g., chlorine, fluorine, bromine, chlorofluoride, etc.), gaseous halides (e.g., chlorine trifluoride, carbon tetrafluoride, nitrogen trifluoride, etc.), and plasmas containing such hydrohalic acids, halogen gases, or gaseous halides.

[0056] The chemistry and / or structure of the sealing layer 280 is selected based on the chemistry of the cleaning gas and / or the processing gas to be used in the processing chamber, such as the processing chamber 100. In an example, for applications where chlorine gas will be used for cleaning the processing chamber, the sealing layer 280 may include silicon dioxide. In another example, for applications where chlorofluoride gas will be used for cleaning the processing chamber, the sealing layer 280 may include a hafnium-containing ceramic. In a further example, for applications where fluorine-rich gas will be used for cleaning the processing chamber, the sealing layer 280 may include a ceramic containing yttrium and / or a metal fluoride and / or a metal oxyfluoride. In a further example, the sealing layer 280 may include one or more of silicon dioxide, hafnium oxide, zirconium oxide, yttrium oxide, magnesium fluoride, yttrium fluoride, lanthanum fluoride, or yttrium oxyfluoride.

[0057] The thickness 282 of the sealing layer 280 is from about 0.05 microns to about 10 microns. For example, the thickness 282 of the sealing layer 280 can be from about 0.1 microns to about 10 microns, such as 0.1 microns to 9 microns, 0.1 microns to 8 microns, 0.1 microns to 7 microns, 0.1 microns to 6 microns, 0.1 microns to 5 microns, 0.1 microns to 4 microns, 0.1 microns to 3 microns, 0.1 microns to 2 microns, or 0.1 microns to 1 micron.

[0058] The sealing layer 280 is substantially non-porous. In an example, the sealing layer 280 has a porosity of 0.1% or less, such as 0.05% or less, 0.01% or less, or 0%.

[0059] The sealing layer 280 is deposited onto the surface 224 of the thermal barrier layer 220 by a physical vapor deposition (PVD) technique, such as ion-assisted deposition, magnetron sputtering, or ion beam sputtering. Additionally or alternatively, the sealing layer 280 may be deposited onto the surface 224 of the thermal barrier layer 220 by a chemical vapor deposition (CVD) technique, such as atomic layer deposition. In some embodiments, the sealing layer 280 is deposited onto the surface 224 of the thermal barrier layer 220 by a PVD technique in combination with a CVD technique.

[0060] FIG. 5A to FIG. 5E Aspects of the sealing layer 280 are schematically depicted. Figure 5AThe surface 224 of the thermal barrier layer 220 is shown as irregular. The thermal barrier layer 220 includes pores 232, some of which are open at the surface 224. The sealing layer 280 is conformally deposited on the thermal barrier layer 220 so that the sealing layer 280 conforms to the irregularities of the surface 224 of the thermal barrier layer 220. As depicted, it is contemplated that the sealing layer 280 may bridge over the pores 232 open at the surface 224 of the thermal barrier layer 220. In some embodiments, the sealing layer 280 may at least partially penetrate into the pores 232 open at the surface 224 of the thermal barrier layer 220.

[0061] The sealing layer 280 may be deposited as a single layer or multiple sub-layers onto the surface 224 of the thermal barrier layer 220. The single layer or any one or more of the multiple sub-layers may have a uniform composition and / or have a uniform morphology.

[0062] In some embodiments, which may be combined with other embodiments, a single layer or any one or more of the multiple sub-layers may be functionally graded and / or compositionally graded. Figure 5B An exemplary structure 285 of the sealing layer 280 is schematically depicted. The structure 285 is functionally graded and / or compositionally graded, and the coefficient of thermal expansion of the structure 285 is less than or equal to the coefficient of thermal expansion of the underlying thermal barrier layer 220. The structure 285 includes a first sublayer 286 on the surface 224 of the thermal barrier layer 220 and a second sublayer 288 on the first sublayer 286. Each of the first sublayer 286 and the second sublayer 288 is made of a ceramic material, such as a ceramic material selected from the examples of ceramic materials listed above.

[0063] The first sublayer 286 and the second sublayer 288 have different chemical compositions. In an example, one of the first sublayer 286 or the second sublayer 288 is silicon dioxide, and the other of the first sublayer 286 or the second sublayer 288 is hafnium oxide. In another example, one of the first sublayer 286 or the second sublayer 288 is zirconium oxide, and the other of the first sublayer 286 or the second sublayer 288 is yttrium oxide. In a further example, one of the first sublayer 286 or the second sublayer 288 is hafnium oxide, and the other of the first sublayer 286 or the second sublayer 288 is yttrium oxide.

[0064] Figure 5CAnother exemplary structure 290 of the sealing layer 280 is schematically depicted. In some embodiments, the structure 290 is functionally graded and / or compositionally graded. In some embodiments that may be combined with other embodiments, the thermal expansion coefficient of the structure 290 is less than or equal to the thermal expansion coefficient of the underlying thermal barrier layer 220. The structure 290 includes a first sublayer 291 on the surface 224 of the thermal barrier layer 220, a second sublayer 292 on the first sublayer 291, and a third sublayer 293 on the second sublayer 292. Each of the first sublayer 291, the second sublayer 292, and the third sublayer 293 is made of a ceramic material, such as a ceramic material selected from the examples of ceramic materials listed above. The first sublayer 291, the second sublayer 292, and the third sublayer 293 have different chemical compositions.

[0065] Figure 5D Another exemplary structure 295 of the sealing layer 280 is schematically depicted. In some embodiments that can be combined with other embodiments, the structure 295 is functionally gradient and / or compositionally gradient. The structure 295 is a laminated structure, such as a nano-laminate, including a plurality of Figure 5B In some embodiments, the first sublayer 286 of one structure 285 is deposited on the second sublayer 288 of another structure 285. In some embodiments, which may be combined with other embodiments, the thickness of any one or more of the first sublayer 286 or the second sublayer 288 in any structure 285 of the structure 295 is less than or equal to 50 nm, such as less than or equal to 40 nm, 30 nm, 20 nm, 15 nm, 10 nm, or 5 nm. In some embodiments, which may be combined with other embodiments, the morphology of any one or more of the first sublayer 286 or the second sublayer 288 in any structure 285 of the structure 295 changes as the thickness increases.

[0066] Figure 5E Another exemplary structure 297 of the sealing layer 280 is schematically depicted. In some embodiments that can be combined with other embodiments, the structure 297 is functionally gradient and / or compositionally gradient. The structure 297 is a laminated structure, such as a nano-laminate, including multiple Figure 5CIn some embodiments, the first sublayer 291 of one structure 290 is deposited on the third sublayer 293 of another structure 290. In some embodiments, which may be combined with other embodiments, the thickness of any one or more of the first sublayer 291, the second sublayer 292, or the third sublayer 293 in any structure 290 of the structure 297 is less than or equal to 50 nm, such as less than or equal to 40 nm, 30 nm, 20 nm, 15 nm, 10 nm, or 5 nm. In some embodiments, which may be combined with other embodiments, the morphology of any one or more of the first sublayer 291, the second sublayer 292, or the third sublayer 293 in any structure 290 of the structure 297 changes as the thickness increases.

[0067] In some embodiments, a repairable coating 200 is contemplated. In an example, the sealing layer 280 is removed from the metal body 102 of the chamber component, such as by an ultrasonic cleaning system or a plasma cleaning tool, to expose the pre-existing underlying thermal barrier layer 220. Subsequently, a new sealing layer 280 is deposited onto the pre-existing underlying thermal barrier layer 220.

[0068] In another example, a weakened (or otherwise damaged) portion of the coating 200 may be removed from the metal body 102 of the chamber component, such as by a mechanical or chemical mechanical grinding tool. A new bonding layer 210 may be applied to any exposed surface 104 of the metal body 102. In the case where a portion of the pre-existing thermal barrier layer 220 may be retained, the new bonding layer 210 may be prevented from contacting the pre-existing thermal barrier layer 220 by masking. Alternatively, the new bonding layer 210 may be applied to the pre-existing thermal barrier layer 220 to serve as a metal sublayer of the metal-ceramic lamination. In some embodiments that may be combined with other embodiments, such as in the absence of an exposed surface 104 of the metal body 102, the new bonding layer 210 is omitted. A new thermal barrier layer 220 is applied. In some embodiments that may be combined with other embodiments, the new thermal barrier layer 220 is applied over an existing sealing layer 280. A new sealing layer 280 is applied over the new thermal barrier layer 220.

[0069] It is contemplated that embodiments of the coating 200 of the present disclosure may provide a variety of benefits to the operation of a processing chamber, such as the processing chamber 100. One benefit is providing an insulating barrier to inhibit heat transfer from the processing space 140 of the processing chamber 100 to the metal body 102 of the chamber components. In an example, without the coating 200, heat dissipation to the walls of the chamber body 170 may result in cooling of the edge of the substrate undergoing processing relative to the center of the substrate. Such temperature non-uniformity may adversely affect the quantity and quality of chemical deposition at the edge of the substrate, which may be detrimental to the product yield of the substrate. However, when the coating 200 of the present disclosure is applied to the inner wall of the chamber body 170, heat transfer to the chamber body 170 is hindered, promoting a more uniform substrate temperature, and alleviating the above-mentioned problems. Another benefit is that the coating 200 assists in substrate temperature management while saving operator expenses, such as the cost involved in providing additional heating for the substrate.

[0070] Another benefit of embodiments of the coating 200 of the present disclosure is protection of the metal body 102 of the chamber components from corrosion, such as corrosion caused by cleaning gases and / or process gases. In an example, certain halogen cleaning gases (such as chlorine) can be applied to the processing chamber 100 in a more cost-effective manner than other cleaning gases (such as hydrochloric acid), but the walls of the chamber body 170 are more susceptible to corrosion by the halogen cleaning gases. For a chamber body 170 made of stainless steel (such as 316L), this susceptibility to corrosion is severe. Conventional thermal barrier coatings do not provide corrosion protection because (i) typically, the bond layer of such conventional coatings does not form a thermally grown oxide layer when used in a processing environment, and (ii) the open porosity of the thermal barrier layer of such conventional coatings provides a path for gases (such as cleaning gases) to contact the unprotected bond layer of the chamber wall and the metal body below.

[0071] In contrast, the bonding layer 210 of the coating 200 of the present disclosure may be selected based on: (i) having better corrosion resistance to halogen-containing chemicals than the metal body 102 of the chamber component (such as the walls of the chamber body 170), and (ii) having such corrosion resistance despite not forming a thermally grown oxide layer when used in a processing environment. In addition, the sealing layer 280 of the coating 200 of the present disclosure hinders gas from entering the thermal barrier layer 220 while resisting erosion by the cleaning gas. Gases (such as the cleaning gas) are prevented from migrating to and contacting the metal body 102 of the chamber component, which protects the chamber component from corrosion.

[0072] An additional benefit of an embodiment of the coating 200 of the present disclosure is that by providing protection against corrosion by halogen gases and gaseous halides, cleaning operations can be customized to suit different processing environments. For example, in some operations, chlorine is preferred as the cleaning gas rather than gaseous hydrochloric acid because cleaning with chlorine may be effective when performed at lower temperatures than cleaning with gaseous hydrochloric acid. However, the use of chlorine may be more harmful to chamber components, particularly stainless steel components. The corrosion protection provided by using the coating 200 of the present disclosure facilitates cleaning with chlorine and provides the benefits of reduced cycle time and lower heating costs compared to cleaning operations using gaseous hydrochloric acid.

[0073] A further benefit of embodiments of the coating 200 of the present disclosure is reduced contamination of the substrate compared to other processing environments that do not incorporate the coating 200 of the present disclosure. When chamber components (such as the walls of the chamber body 170) are subject to corrosion, particles and corrosion products of the metal from the chamber components may be released into the processing volume 140 during processing operations and may be deposited on the substrate, which contaminates structures formed on the substrate. Such contamination is detrimental to product quality and product yield of the substrate.

[0074] However, the corrosion protection provided by the coating 200 of the present disclosure hinders the generation of metallic particles and corrosion products from the coated chamber components, which reduces contamination of the substrate undergoing processing.

[0075] It is contemplated that components and features of any one disclosed embodiment may be advantageously incorporated into one or more other embodiments. Although the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure, and the scope of the present disclosure is determined by the appended claims.

Claims

1. A substrate processing chamber component, the substrate processing chamber component comprising: Metal body; a metal bonding layer deposited on a surface of the metal body; a thermal barrier layer deposited on the bonding layer; as well as A substantially non-porous ceramic sealing layer is deposited on the thermal barrier layer.

2. The substrate processing chamber component of claim 1, wherein the bonding layer comprises at least one of: pure nickel, pure titanium, a cobalt-based alloy, an iron-based alloy, a nickel-based alloy, a titanium-based alloy, or a composite of ceramic particles distributed in a metal matrix. 3 . The substrate processing chamber component of claim 1 , wherein the bonding layer has a coefficient of thermal expansion less than a coefficient of thermal expansion of the metal body and greater than or equal to a coefficient of thermal expansion of the thermal barrier layer.

4. The substrate processing chamber component of claim 1, wherein: The thermal barrier layer comprises a single-phase ceramic structure including a primary ceramic doped with a secondary ceramic; The proportion of the secondary ceramic changes from a first magnitude at a first location to a second magnitude at a second location; The second ratio is lower than the first ratio; and The first position differs from the second position in being closer to the surface of the metal body.

5. The substrate processing chamber component of claim 1, wherein: The thermal barrier layer comprises one or more pairs of sub-layers, each pair of sub-layers comprising: a first sublayer, the first sublayer comprising a first ceramic; and a second sublayer, the second sublayer comprising a second ceramic; and The first ceramic differs from the second ceramic in at least one of the following: Chemical composition; Porosity; the magnitude of open porosity; or form.

6. The substrate processing chamber component of claim 1, wherein the thermal barrier layer comprises: a first sublayer, the first sublayer comprising a first ceramic; a second sublayer, the second sublayer comprising the first metal, the second sublayer being on top of the first sublayer; as well as A third sublayer comprises a second ceramic, and the third sublayer is on top of the second sublayer.

7. The substrate processing chamber component of claim 6, wherein the first ceramic and the second ceramic have the same chemical composition.

8. The substrate processing chamber component of claim 6, wherein the first ceramic differs from the second ceramic by at least one of: Chemical composition; Porosity; the magnitude of open porosity; or form.

9. The substrate processing chamber component of claim 6, wherein the thermal barrier layer further comprises one or more pairs of additional sub-layers on top of the third sub-layer, each pair of additional sub-layers comprising: a fourth sublayer, the fourth sublayer comprising a second metal; as well as A fifth sublayer, wherein the fifth sublayer comprises a third ceramic and is on top of the fourth sublayer.

10. The substrate processing chamber component of claim 1, wherein the thermal barrier layer comprises at least one of: a metal oxide, a metal nitride, a metal oxynitride, or a metal oxycarbide.

11. The substrate processing chamber component of claim 1, wherein the ceramic sealing layer comprises at least one of: a metal oxide, a metal fluoride, or a metal oxyfluoride.

12. The substrate processing chamber component of claim 11, wherein the ceramic sealing layer comprises at least one of silicon dioxide, hafnium oxide, zirconium oxide, yttrium oxide, magnesium fluoride, yttrium fluoride, lanthanum fluoride, or yttrium oxyfluoride.

13. The substrate processing chamber component of claim 1, wherein the ceramic sealing layer comprises: a first sublayer, the first sublayer comprising a first ceramic; as well as A second sublayer, the second sublayer comprises a second ceramic, the second ceramic having a different chemical composition than the first ceramic.

14. The substrate processing chamber component of claim 13, wherein the ceramic sealing layer further comprises a third sub-layer, the third sub-layer comprising the first ceramic, the third sub-layer being deposited on the second sub-layer.

15. A substrate processing chamber component, the substrate processing chamber component comprising: a body, the body comprising stainless steel; a metal bonding layer having a first thickness, the metal bonding layer being deposited on a surface of the body, the bonding layer being more resistant to corrosion by halogen-containing chemicals than the body; a thermal barrier layer, the thermal barrier layer having a second thickness, the thermal barrier layer being deposited on the bonding layer, the second thickness being greater than the first thickness; as well as A substantially non-porous ceramic sealing layer having a third thickness is deposited on the thermal barrier layer, the third thickness being less than the first thickness.

16. The substrate processing chamber component of claim 15, wherein the thermal barrier layer has an overall thermal conductivity less than or equal to 20 W / mK.

17. The substrate processing chamber component of claim 15, wherein the third thickness is from 0.05 microns to 10 microns.

18. The substrate processing chamber component of claim 15, wherein the ceramic sealing layer is resistant to corrosion by halogen-containing chemicals.

19. The substrate processing chamber component of claim 15, wherein the ceramic sealing layer is conformally deposited on the thermal barrier layer by one of atomic layer deposition or ion beam sputtering.

20. A substrate processing chamber component, the substrate processing chamber component comprising: Metal body; a metal bonding layer deposited on a surface of the metal body; a thermal barrier layer deposited on the bonding layer; as well as A ceramic sealing layer, wherein the ceramic sealing layer is deposited on the thermal barrier layer, and the ceramic sealing layer comprises: a first sublayer, the first sublayer comprising a first ceramic; a second sublayer, the second sublayer comprising a second ceramic; and a third sublayer, the third sublayer comprising a third ceramic; The second ceramic has a chemical composition different from that of the first ceramic and the third ceramic.

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