Perovskite battery, preparation method thereof and power utilization device

Abstract

The invention provides a perovskite cell, a preparation method thereof and a power utilization device, and belongs to the technical field of solar cells. The perovskite battery comprises a plurality of battery units arranged along a first direction, and each battery unit comprises a first electrode layer, a second electrode layer and a first perovskite layer located between the first electrode layer and the second electrode layer which are arranged along a second direction; the connecting structure is used for connecting the first electrode layer of the first battery unit and the second electrode layer of the second battery unit which are adjacent in the plurality of battery units; wherein a conductive oxide layer is arranged between the connecting structure and the first perovskite layer. According to the technical scheme, the performance of the perovskite battery can be improved.

Description

Perovskite battery, preparation method thereof, and power-using device Technical Field

[0001] The present application relates to the technical field of solar cells, and in particular to a perovskite cell, a preparation method thereof, and an electrical device thereof. Background Art

[0002] In recent years, global energy shortages and environmental pollution have become increasingly prominent, and solar cells, as an ideal renewable energy source, have garnered increasing attention. Solar cells, also known as photovoltaic cells, are devices that convert light energy directly into electrical energy through the photoelectric or photochemical effects. Perovskite cells are a new type of solar cell that is currently being widely researched. Within a few years of their development, they have rapidly achieved high photoelectric conversion efficiencies and hold great promise for future applications.

[0003] However, the perovskite layer in perovskite cells is unstable and easily reacts with some metals, which is not conducive to improving the performance of perovskite cells. Therefore, how to improve the performance of perovskite cells is a technical problem that needs to be solved urgently.

[0004] Summary of the Invention

[0005] The present application is made in view of the above-mentioned problems, and its purpose is to provide a perovskite battery and its preparation method and electrical device to improve the performance of the perovskite battery.

[0006] In a first aspect, the present application provides a perovskite battery, comprising: a plurality of battery cells arranged along a first direction, the battery cells comprising a first electrode layer arranged along a second direction, a second electrode layer and a first perovskite layer located between the first electrode layer and the second electrode layer; a connecting structure, the connecting structure being used to connect the first electrode layer of a first battery cell and the second electrode layer of a second battery cell adjacent to each other in the plurality of battery cells; wherein a conductive oxide layer is provided between the connecting structure and the first perovskite layer.

[0007] An embodiment of the present application provides a perovskite battery cell comprising a plurality of battery cells arranged along a first direction and a connection structure. The battery cells comprise a first electrode layer, a second electrode layer, and a first perovskite layer positioned between the first and second electrode layers, arranged along a second direction. Thus, the battery cells can output power through the first and second electrode layers and absorb sunlight through the first perovskite layer. The connection structure is configured to connect the first electrode layer and the second electrode layer of adjacent first and second battery cells in the plurality of battery cells, thereby electrically connecting the adjacent first and second battery cells. A conductive oxide layer is disposed between the connection structure and the first perovskite layer. On the one hand, the conductive oxide layer does not react with the connection structure. By providing the conductive oxide layer, the first perovskite layer is prevented from direct contact with the connection structure, thereby reducing the risk of corrosion of the connection structure caused by reaction between the first perovskite layer and the connection structure. On the other hand, the risk of degradation of the first perovskite layer at the location corresponding to the connection structure is reduced, thereby improving the lifespan of the perovskite battery cell. Therefore, the embodiments of the present application can improve the performance of the perovskite battery cell.

[0008] In one possible implementation, the conductive oxide layer extends from the first surface of the second electrode layer to the first surface of the first electrode layer. The first surface of the second electrode layer is the surface of the second electrode layer close to the first electrode layer, and the first surface of the first electrode layer is the surface of the first electrode layer close to the second electrode layer. This facilitates the preparation of the conductive oxide layer by local deposition or pasting, which helps reduce the complexity of the production process.

[0009] In one possible implementation, the conductive oxide layer is disposed between the connection structure and the first electrode layer. In this way, the conductive oxide layer can be deposited before the connection structure is prepared, which helps reduce the complexity of the production process.

[0010] In one possible implementation, the connection structure is a conductive wall extending from the first surface of the second electrode layer to the first electrode layer, where the first surface of the second electrode layer is the surface of the second electrode layer close to the first electrode layer. This facilitates the preparation of the connection structure and helps reduce production process complexity.

[0011] In one possible implementation, the battery cell includes the first electrode layer, the first charge transport layer, the first perovskite layer, the second charge transport layer, and the second electrode layer sequentially disposed on a substrate. Thus, carrier transport in the perovskite battery can be achieved through the first charge transport layer and the second charge transport layer.

[0012] In one possible implementation, the conductive oxide layer is disposed between the second electrode layer and the second charge transport layer. This can, to a certain extent, prevent the corrosion of the second electrode layer by the halogen ions in the first perovskite layer, and can also, to a certain extent, prevent the diffusion of the halogen ions, thereby facilitating improved efficiency of the perovskite cell.

[0013] In one possible implementation, the battery cell further includes a light absorbing layer located between the first electrode layer and the second electrode layer. Thus, in addition to the first perovskite layer, the perovskite cell also includes another light absorbing layer, which is beneficial for further improving the efficiency of the perovskite cell.

[0014] In one possible implementation, the light absorption layer includes a second perovskite layer, and the battery cell further includes a third electrode layer, a third charge transport layer, a second perovskite layer, and a fourth charge transport layer, disposed sequentially between the second charge transport layer and the second electrode layer. The conductive oxide layer is disposed between the connecting structure and the second perovskite layer. In this implementation, the perovskite cell has higher efficiency, and the provision of the conductive oxide layer can also extend the life of the perovskite cell.

[0015] In one possible implementation, the band gap of the first perovskite layer is greater than the band gap of the second perovskite layer, which is beneficial for improving the absorption efficiency of sunlight and thus improving the photoelectric conversion efficiency.

[0016] In one possible implementation, the light absorbing layer includes a copper indium gallium selenide layer, and the battery cell further includes a fifth charge transport layer, the copper indium gallium selenide layer, a sixth charge transport layer, and a fourth electrode layer, disposed sequentially between the first electrode layer and the second charge transport layer. Thus, in perovskite cells that include other types of light absorbing layers, the provision of a conductive oxide layer can improve the lifespan of the perovskite cell.

[0017] In a possible implementation, the second electrode layer and the connection structure are integrally formed. In this way, the second electrode layer and the connection structure can be prepared through sequential process steps, which is beneficial to reducing production costs.

[0018] In a possible implementation, the resistivity of the conductive oxide layer is less than 1*10 -2 Ω·cm; Optionally, the resistivity of the conductive oxide layer is less than 5*10 -3 In this way, the increase in the internal resistance of the perovskite cell caused by the low conductivity or high resistivity of the conductive oxide can be reduced, thereby improving the efficiency of the perovskite cell and reducing the power loss of the perovskite cell.

[0019] In one possible implementation, the thickness of the conductive oxide layer is 5 nm to 100 nm, and optionally 20 nm to 50 nm. This balances the protective effect of the conductive oxide layer on the first perovskite layer, the second electrode layer, and the connection structure, and the efficiency and production cost of the perovskite cell.

[0020] In one possible implementation, the conductive oxide layer is made of at least one of indium tin oxide, indium zinc oxide, indium tungsten oxide, gallium zinc oxide, aluminum zinc oxide, lanthanide-doped indium oxide, hafnium indium oxide, tantalum indium oxide, and niobium indium oxide. This allows the conductive oxide layer to be transparent and the perovskite cell to be translucent, facilitating the timely detection of structural faults in the perovskite cell. Furthermore, the conductive oxide layer made of the aforementioned materials can help reduce the resistance and power loss of the perovskite cell.

[0021] In one possible implementation, the first electrode layer is made of a transparent conductive oxide. This facilitates sunlight transmission through the first electrode layer. Furthermore, since both the first electrode layer and the conductive oxide layer are made of conductive oxides, the contact resistance between them is low, which helps reduce power loss in the perovskite cell.

[0022] In one possible implementation, the material of the first electrode layer includes at least one of indium tin oxide, indium zinc oxide, indium tungsten oxide, gallium zinc oxide, aluminum zinc oxide, and fluorine-doped tin oxide. This ensures that the first electrode layer has good light transmittance and electrical conductivity.

[0023] In one possible implementation, the material of the second electrode layer includes at least one of Au, Ag, Cu, Al, Ni, Cr, Bi, Pt, Mg, Mo, W, alloys thereof, and a carbon material. Optionally, the carbon material includes at least one of carbon black, graphene, and carbon nanotubes. This ensures that the second electrode layer has good conductivity.

[0024] In one possible implementation, the thickness of the first electrode layer is 300nm to 800nm, the thickness of the second electrode layer is 10nm to 200nm, and the thickness of the first perovskite layer is 300nm to 800nm. Alternatively, the thickness of the first electrode layer is 400nm to 600nm, the thickness of the second electrode layer is 80nm to 120nm, and the thickness of the first perovskite layer is 400nm to 600nm. In this way, both the efficiency and energy density of the perovskite cell can be taken into account.

[0025] In one possible implementation, the first perovskite layer has a structural formula of ABX3, wherein the ionic radius of A is 0.076nm-0.315nm, the ionic radius of B is 0.06nm-0.15nm, and the ionic radius of X is 0.1nm-0.2nm. Optionally, A comprises at least one of an organic amine cation, Cs, K, Rb, and Li, B comprises at least one of lead, tin, zinc, titanium, antimony, bismuth, nickel, iron, cobalt, silver, copper, gallium, germanium, magnesium, calcium, indium, aluminum, manganese, chromium, molybdenum, and europium, and X comprises at least one of fluorine, chlorine, bromine, and iodine. Optionally, the organic amine cation comprises at least one of a methylamine ion and a formamidinium ion. This ensures the efficiency of the perovskite cell.

[0026] In one possible implementation, the first charge transport layer is a hole transport layer, and the second charge transport layer is an electron transport layer; or the first charge transport layer is an electron transport layer, and the second charge transport layer is a hole transport layer. This facilitates flexible arrangement of the first and second charge transport layers according to actual needs.

[0027] In one possible implementation, the material of the hole transport layer includes a P-type semiconductor, and the material of the electron transport layer includes an N-type semiconductor; optionally, the material of the hole transport layer includes: thiophene, phthalocyanine, porphyrin, 2,2',7,7'-tetrakis (N,N-di-p-methoxyaniline)-9,9'-spirobifluorene, molybdenum oxide, vanadium oxide, tungsten oxide, nickel oxide, copper oxide, tin oxide, molybdenum sulfide, tungsten sulfide, copper sulfide, tin sulfide, cuprous thiocyanate, iodine The material of the electron transport layer includes at least one of copper fluoride, fluorine-containing phosphonic acid, carbonyl-containing phosphonic acid, carbon nanotubes, and graphene; optionally, the material of the electron transport layer includes at least one of [6,6]-phenyl-C61-butyric acid isomethyl ester, C60, cyano-containing polyphenylene vinylene, boron-containing polymer, bathocuproine, bathophenanthroline, hydroxyquinoline aluminum, oxadiazole compounds, benzimidazole compounds, naphthalenetetracarboxylic acid compounds, perylene derivatives, phosphine oxide compounds, phosphine sulfide compounds, fluorine-containing phthalocyanine, titanium oxide, zinc oxide, indium oxide, tin oxide, gallium oxide, tin sulfide, indium sulfide, lithium fluoride, sodium fluoride, magnesium fluoride, and zinc sulfide. In this way, it is convenient to flexibly select the materials of the first charge transport layer and the second charge transport layer according to actual needs.

[0028] In one possible implementation, the thickness of the first charge transport layer is 10 nm to 200 nm, and the thickness of the second charge transport layer is 10 nm to 200 nm. This helps to ensure the efficiency of the perovskite cell.

[0029] In one possible implementation, the substrate material includes at least one of glass and a transparent flexible polymer. Optionally, the transparent flexible polymer includes at least one of polyethylene terephthalate and polyimide. This allows for flexible selection of the substrate material based on actual needs.

[0030] In a second aspect, the present application provides an electrical device, comprising the perovskite battery in the first aspect and any possible implementation thereof, wherein the perovskite battery is used to supply power to the electrical device.

[0031] In a third aspect, the present application provides a method for preparing a perovskite battery, comprising: providing a plurality of battery cells arranged along a first direction, the battery cells comprising a first electrode layer arranged along a second direction, a second electrode layer, and a first perovskite layer located between the first electrode layer and the second electrode layer; providing a connection structure, the connection structure being used to connect the first electrode layer of a first battery cell and the second electrode layer of a second battery cell adjacent to each other in the plurality of battery cells, wherein a conductive oxide layer is provided between the connection structure and the first perovskite layer. The perovskite battery prepared by this method has a long lifespan.

[0032] In one possible implementation, providing a plurality of battery cells arranged along a first direction includes: providing a substrate on which the first electrode layer is disposed; sequentially depositing a first charge transport layer, a first perovskite layer, and a second charge transport layer on the first electrode layer; and depositing the second electrode layer on the second charge transport layer; providing a connection structure includes: etching the second charge transport layer along the second direction to expose the first electrode layer and form a first groove; and depositing the conductive oxide layer on the second charge transport layer and within the first groove. This method can prepare the conductive oxide layer through a single deposition process, which helps reduce process complexity.

[0033] An embodiment of the present application provides a perovskite battery cell comprising a plurality of battery cells arranged along a first direction and a connection structure. The battery cells comprise a first electrode layer, a second electrode layer, and a first perovskite layer positioned between the first and second electrode layers, arranged along a second direction. Thus, the battery cells can output power through the first and second electrode layers and absorb sunlight through the first perovskite layer. The connection structure is configured to connect the first electrode layer and the second electrode layer of adjacent first and second battery cells in the plurality of battery cells, thereby electrically connecting the adjacent first and second battery cells. A conductive oxide layer is disposed between the connection structure and the first perovskite layer. The conductive oxide layer does not react with the connection structure. The provision of the conductive oxide layer prevents the first perovskite layer from direct contact with the connection structure, thereby reducing the risk of corrosion of the connection structure caused by reaction between the first perovskite layer and the connection structure. Furthermore, the risk of degradation of the first perovskite layer at the location corresponding to the connection structure is reduced, thereby improving the lifespan of the perovskite battery cell. Therefore, the embodiments of the present application can improve the lifespan and other performance characteristics of the perovskite battery cell. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] FIG1 is a schematic diagram of a perovskite cell according to an embodiment of the present application;

[0035] FIG2 is a schematic diagram of a perovskite cell according to an embodiment of the present application;

[0036] FIG3 is a schematic diagram of a perovskite cell according to an embodiment of the present application;

[0037] FIG4 is a schematic diagram of a perovskite cell according to an embodiment of the present application;

[0038] FIG5 is a schematic diagram of a perovskite cell according to an embodiment of the present application;

[0039] FIG6 is a schematic diagram of a perovskite cell according to an embodiment of the present application;

[0040] FIG7 is a schematic diagram of a perovskite cell according to an embodiment of the present application;

[0041] FIG8 is a schematic diagram of a battery cell of a perovskite battery according to an embodiment of the present application;

[0042] FIG9 is a schematic diagram of an electrical device according to an embodiment of the present application;

[0043] FIG10 is a schematic diagram of a method for preparing a perovskite cell according to an embodiment of the present application. DETAILED DESCRIPTION

[0044] Below, with appropriate reference to the accompanying drawings, embodiments of the perovskite cell, electrical device, and method for preparing a perovskite cell of the present application are described in detail. However, unnecessary detailed descriptions may be omitted. For example, detailed descriptions of well-known matters and repeated descriptions of substantially identical structures may be omitted. This is to avoid the following description from becoming unnecessarily lengthy and to facilitate understanding by those skilled in the art. In addition, the drawings and the following description are provided to enable those skilled in the art to fully understand the present application and are not intended to limit the subject matter described in the claims.

[0045] " range " disclosed in the present application is limited in the form of lower limit and upper limit, and given range is limited by selecting a lower limit and an upper limit, and the selected lower limit and upper limit define the boundary of special range. The scope limited in this way can be to include end value or not include end value, and can be arbitrarily combined, that is, any lower limit can form a range with any upper limit combination. For example, if the scope of 60-120 and 80-110 is listed for specific parameters, it is understood that the scope of 60-110 and 80-120 is also expected. In addition, if the minimum range value 1 and 2 are listed, and if the maximum range value 3,4 and 5 are listed, then the following range can all be expected: 1-3, 1-4, 1-5, 2-3, 2-4 and 2-5. In this application, unless otherwise specified, the numerical range " ab " represents the abbreviation of any real number combination between a and b, wherein a and b are all real numbers. For example, a numerical range of "0-5" indicates that all real numbers between "0-5" are listed herein, and "0-5" is simply an abbreviation for these numerical combinations. Furthermore, when a parameter is expressed as an integer ≥ 2, this is equivalent to disclosing that the parameter is, for example, an integer of 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc.

[0046] Unless otherwise specified, all embodiments and optional embodiments of the present application can be combined with each other to form a new technical solution.

[0047] Unless otherwise specified, all technical features and optional technical features of this application can be combined with each other to form a new technical solution.

[0048] Unless otherwise specified, all steps of the present application may be performed sequentially or randomly, preferably sequentially. For example, the method includes steps (a) and (b), indicating that the method may include steps (a) and (b) performed sequentially, or may include steps (b) and (a) performed sequentially. For example, the method may further include step (c), indicating that step (c) may be added to the method in any order, for example, the method may include steps (a), (b) and (c), or may include steps (a), (c) and (b), or may include steps (c), (a) and (b), etc.

[0049] Unless otherwise specified, the terms "include" and "comprising" used in this application may be open-ended or closed-ended. For example, "include" and "comprising" may mean that other components not listed may also be included or that only the listed components are included.

[0050] Unless otherwise specified, the term "or" is used in this application to be inclusive. For example, the phrase "A or B" means "A, B, or both A and B." More specifically, the condition "A or B" is satisfied if any of the following conditions are met: A is true (or exists) and B is false (or does not exist); A is false (or does not exist) and B is true (or exists); or both A and B are true (or exist).

[0051] Solar cells, also known as photovoltaic cells, are devices that convert light energy directly into electrical energy through the photoelectric or photochemical effect. Perovskite cells are a new type of solar cell that is currently being widely researched. Within a few years of their development, they have rapidly achieved high photoelectric conversion efficiencies and hold promising application prospects. Perovskite cells consist of multiple cells and a connecting structure. The connecting structure electrically connects adjacent cells by connecting their first and second electrode layers.

[0052] After research, the applicant found that the connection structure is usually made of metal materials. The metal connection structure reacts with the perovskite layer in the perovskite battery, which may cause corrosion of the connection structure and degradation of the perovskite, which are not conducive to improving the performance of the perovskite battery.

[0053] In view of this, the present application provides a perovskite cell, in which a conductive oxide layer is provided between the perovskite layer and the connecting structure, which is beneficial to reducing the risk of corrosion of the connecting structure and decomposition of the perovskite layer, thereby improving the performance of the perovskite cell.

[0054] Figure 1 is a schematic diagram of a perovskite battery according to an embodiment of the present application. As shown in Figure 1 , the perovskite battery 1 includes a plurality of battery cells 20 arranged along a first direction and a connection structure 31 .

[0055] The first direction is the arrangement direction of the plurality of battery cells 20 , for example, the x direction in FIG. 1 .

[0056] The battery cell 20 includes a first electrode layer 51, a second electrode layer 52 arranged along a second direction, and a first perovskite layer 53 located between the first electrode layer 51 and the second electrode layer 52. Optionally, the second direction is perpendicular to the first direction, for example, the z direction in FIG1 .

[0057] The first electrode layer 51 and the second electrode layer 52 are used to output the power of the perovskite cell 1. The materials of the first electrode layer 51 and the second electrode layer 52 can be set according to actual needs, as long as the power output of the perovskite cell 1 can be achieved.

[0058] The first perovskite layer 53 is a light absorption layer. When the first perovskite layer 53 is irradiated by sunlight, electron-hole pairs can be generated.

[0059] The connection structure 31 is used to connect the first electrode layer 51 of the first battery cell 21 and the second electrode layer 52 of the second battery cell 22 adjacent to each other in the plurality of battery cells 20. In other words, the plurality of battery cells 20 includes adjacent first and second battery cells 21, 22, and the first electrode layer 51 of the first battery cell 21 and the second electrode layer 52 of the second battery cell 22 are connected via the connection structure 31. The connection structure 31 is a conductive structure that realizes the series connection of adjacent battery cells 20.

[0060] Optionally, the connection structure 31 and the second electrode layer 52 are made of the same material. For example, the connection structure 31 and the second electrode layer 52 are both made of metal.

[0061] A conductive oxide layer 54 is disposed between the connection structure 31 and the first perovskite layer 53 .

[0062] The conductive oxide layer 54 may be conductive and does not react with the connection structure 31 and the first perovskite layer 53 .

[0063] The connection structure 31 has two surfaces facing each other along a first direction. For example, a conductive oxide layer 54 is provided on a region of one of the two surfaces facing the first perovskite layer 53. For another example, as shown in FIG1 , a conductive oxide layer 54 is provided on regions of both surfaces facing the first perovskite layer 53.

[0064] It should be noted that whether the conductive oxide layer 54 is arranged on two surfaces of the connection structure 31 opposite to each other along the first direction or on one of the two surfaces can be arranged according to the specific structure and actual needs of the perovskite battery 1, for example, according to the specific structure of the connection structure 31 or the spacing between the connection structure 31 and other structures.

[0065] Optionally, the conductive oxide layer 54 is bonded between the first perovskite layer 53 and the connection structure 31. Optionally, the conductive oxide layer 54 is disposed between the first perovskite layer 53 and the connection structure 31 by local deposition or other methods.

[0066] The present application provides a perovskite battery 1, comprising a plurality of battery cells 20 arranged along a first direction and a connection structure 31. The battery cell 20 comprises a first electrode layer 51, a second electrode layer 52, and a first perovskite layer 53 located between the first electrode layer 51 and the second electrode layer 52, arranged along a second direction. In this way, the battery cell 20 can output power through the first electrode layer 51 and the second electrode layer 52, and absorb sunlight through the first perovskite layer 53. The connection structure 31 is used to connect the first electrode layer 51 of the first battery cell 21 and the second electrode layer 52 of the second battery cell 22 adjacent to each other in the plurality of battery cells 20, thereby achieving electrical connection between the adjacent first battery cells 21 and the second battery cell 22. A conductive oxide layer 54 is provided between the connection structure 31 and the first perovskite layer 53. On the one hand, the conductive oxide layer 54 does not react with the connection structure 31. By providing the conductive oxide layer 54, the first perovskite layer 53 does not directly contact the connection structure 31, which can reduce the risk of corrosion of the connection structure 31 caused by the reaction between the first perovskite layer 53 and the connection structure 31. On the other hand, the risk of degradation of the first perovskite layer 53 at the position corresponding to the connection structure 31 can be reduced, thereby facilitating the improvement of the life of the perovskite cell 1. Therefore, the embodiments of the present application can improve the performance of the perovskite cell 1.

[0067] FIG2 is a schematic diagram of a perovskite cell according to an embodiment of the present application. In some embodiments, as shown in FIG2 , the conductive oxide layer 54 extends from the first surface 521 of the second electrode layer 52 to the first surface 511 of the first electrode layer 51 .

[0068] The second electrode layer 52 includes two surfaces facing each other along a second direction, ie, a thickness direction of the second electrode layer 52. The first surface 521 of the second electrode layer 52 is a surface of the second electrode layer 52 close to the first electrode layer 51.

[0069] The first electrode layer 51 includes two surfaces facing each other along the second direction, that is, the thickness direction of the first electrode layer 51. The first surface 511 of the first electrode layer 51 is a surface of the first electrode layer 51 close to the second electrode layer 52.

[0070] In this embodiment, the conductive oxide layer 54 can be prepared by deposition or pasting before preparing the connection structure 31, so that the conductive oxide layer 54 is disposed between the first perovskite layer 53 and the connection structure 31, which is beneficial to reducing the complexity of the production process.

[0071] FIG3 is a schematic diagram of a perovskite cell according to an embodiment of the present application. In some embodiments, as shown in FIG3 , a conductive oxide layer 54 is disposed between the connection structure 31 and the first electrode layer 51 .

[0072] Optionally, in this embodiment, the battery cell 20 may be etched along the second direction to form a groove before forming the second electrode layer 52 and the connection structure 31 . Then, a conductive oxide is deposited on the inner surface of the groove to form a conductive oxide layer 54 .

[0073] In this embodiment, a conductive oxide layer may be prepared by deposition before preparing the connection structure 31 , which helps to reduce the complexity of the production process.

[0074] Figure 4 is a schematic diagram of a perovskite cell according to one embodiment of the present application. As shown in Figure 4 , the connecting structure 31 corresponds to the area of ​​the first perovskite layer 53, and a conductive oxide layer 54 is disposed between the connecting structure 31 and the first perovskite layer 53; and the conductive oxide layer 54 is disposed between the connecting structure 31 and the first electrode layer 51. Alternatively, the conductive oxide layer 54 can be formed by gluing or localized coating.

[0075] In some embodiments, as shown in Figures 1 to 4, the connection structure 31 is a conductive wall extending from the first surface 521 of the second electrode layer 52 to the first electrode layer 51, and the first surface 521 of the second electrode layer 52 is the surface of the second electrode layer 52 close to the first electrode layer 51.

[0076] The conductive wall refers to the connection structure 31 being a conductive columnar structure with a certain thickness, optionally a rectangular columnar structure.

[0077] For example, the connection structure 31 may be a conductive wall formed to fill a groove extending from the first surface 521 of the second electrode layer 52 to the first electrode layer 51. The material of the connection structure 31 is the same as that of the second electrode layer 52, that is, the connection structure 32 and the second electrode layer 52 are formed by a single deposition step.

[0078] Optionally, the connection structure 31 extends along the second direction from the first surface 521 of the second electrode layer 52 to the first surface 511 of the first electrode layer 51 .

[0079] Optionally, the connection structure 31 extends along the second direction from the first surface 521 of the second electrode layer 52 to the second surface 512 of the first electrode layer 51 . The second surface 512 of the first electrode layer 51 is a surface of the first electrode layer 51 away from the second electrode layer 52 .

[0080] In this embodiment, by setting the connection structure 31 as a conductive wall extending from the first surface 521 of the second electrode layer 52 to the first electrode layer 51 along the second direction, the preparation of the connection structure 31 is facilitated, which helps to reduce the complexity of the production process.

[0081] FIG5 is a schematic diagram of a perovskite battery according to an embodiment of the present application. In some embodiments, as shown in FIG1 to FIG5 , the battery cell 20 includes a first electrode layer 51, a first charge transport layer 61, a first perovskite layer 53, a second charge transport layer 62, and a second electrode layer 52, which are sequentially disposed on a substrate 50.

[0082] For example, as shown in FIG1 , the conductive oxide layer 54 is disposed only between the first perovskite layer 53 and the connection structure 31. For another example, as shown in FIG2 , FIG3 , and FIG5 , the conductive oxide layer 54 may also be disposed between the first charge transport layer 61 and the second charge transport layer 62 and the connection structure 31. For another example, as shown in FIG4 , the conductive oxide layer 54 may not be disposed between the first charge transport layer 61 and the second charge transport layer 62 and the connection structure 31.

[0083] The first charge transport layer 61 and the second charge transport layer 62 are used to transport carriers, for example, electrons or holes.

[0084] In this embodiment, the transport of carriers in the perovskite cell 1 can be achieved by disposing the first charge transport layer 61 and the second charge transport layer 62 .

[0085] In some embodiments, as shown in FIG. 5 , a conductive oxide layer 54 is disposed between the second electrode layer 52 and the second charge transport layer 62 .

[0086] In this embodiment, a conductive oxide layer 54 is provided between the second electrode layer 52 and the second charge transport layer 62. This layer can, to a certain extent, prevent the corrosion of the second electrode layer 52 by the halogen ions in the first perovskite layer 53, while also preventing the diffusion of halogen ions. Furthermore, the conductive oxide layer 54 can reduce leakage current and carrier recombination caused by the contact between the first perovskite layer 53 and the second electrode layer 52. Therefore, this embodiment is conducive to improving the efficiency of the perovskite cell 1.

[0087] Optionally, the perovskite cell 1 further includes a first isolation structure 32 and a second isolation structure 33 .

[0088] The first isolation structure 32 is used to isolate the first electrode layer 51 of the adjacent first battery cell 21 from the first electrode layer 51 of the adjacent second battery cell 22. The embodiment of the present application does not impose any specific restrictions on the size of the first isolation structure 32 along the second direction or the shape of the first isolation structure 32, as long as the isolation of the first electrode layers 51 of adjacent battery cells 20 can be achieved.

[0089] For example, the first isolation structure 32 is a groove that penetrates the first electrode layer 51. That is, the first isolation structure 32 extends along the second direction from the first surface 511 of the first electrode layer 51 to the second surface 512 of the first electrode layer 51. For another example, the first isolation structure 32 penetrates the first electrode layer 51 and the substrate 50 along the second direction. For another example, the first isolation structure 32 penetrates the first charge transfer layer 61 and the first electrode layer 51 along the second direction. For another example, the first isolation structure 32 is an insulating wall that extends along the second direction from the first surface 511 of the first electrode layer 51 to the second surface 512 of the first electrode layer 51, and the insulating wall is formed of an insulating material.

[0090] The second isolation structure 33 is used to isolate the second electrode layer 52 of the adjacent first battery cell 21 from the second electrode layer 51 of the adjacent second battery cell 22. The embodiment of the present application does not impose any specific restrictions on the size of the second isolation structure 33 along the second direction or the shape of the second isolation structure 33, as long as the isolation of the second electrode layers 52 of adjacent battery cells 20 can be achieved.

[0091] For example, the second isolation structure 33 is a groove extending along the second direction from the second surface 522 of the second electrode layer 52 to the first surface 511 of the first electrode layer 51, wherein the second surface 522 of the second electrode layer 52 is a surface of the second electrode layer 52 away from the first electrode layer 51. For another example, the second isolation structure 33 is an insulating wall extending along the second direction from the second surface 522 of the second electrode layer 52 to the first surface 511 of the first electrode layer 51, and the insulating wall is formed of an insulating material.

[0092] Optionally, along the first direction, the connection structure 31 and the first isolation structure 32 are spaced apart.

[0093] Optionally, the connection structure 31 and the second isolation structure 33 are spaced apart along the first direction. For example, as shown in Figures 4 and 5 , the distance k1 between the connection structure 31 and the second isolation structure 33 is 5 μm to 25 μm. This facilitates the fabrication of the second isolation structure 33 and reduces the difficulty of the manufacturing process; it also helps reduce material waste between the connection structure 31 and the second isolation structure 33.

[0094] The distance k1 between the connecting structure 31 and the second isolation structure 33 is the minimum distance therebetween, and the distance can be measured using an optical microscope.

[0095] Figure 6 is a schematic diagram of a perovskite cell according to an embodiment of the present application, and Figure 7 is a schematic diagram of a perovskite cell according to an embodiment of the present application. In some embodiments, as shown in Figures 6 and 7 , the battery cell 20 further includes a light absorbing layer 59 located between the first electrode layer 51 and the second electrode layer 52.

[0096] That is, the perovskite cell 1 includes the first perovskite layer 53 and the light absorption layer 59 other than the first perovskite layer 53. This is beneficial to improving the efficiency of the perovskite cell 1.

[0097] In some embodiments, as shown in Figure 6, the light absorption layer 59 includes a second perovskite layer 56, the battery cell 20 also includes a third electrode layer 55, a third charge transport layer 63, a second perovskite layer 56 and a fourth charge transport layer 64 located between the second charge transport layer 62 and the second electrode layer 52 and arranged in sequence, and a conductive oxide layer 54 is provided between the connecting structure 31 and the second perovskite layer 56.

[0098] The battery cell 20 shown in FIG6 can be referred to as a stacked-structure battery cell 20. The battery cell 20 shown in FIG6 includes two sub-cells, one of which includes a structure of an electrode layer-charge transport layer-perovskite layer-charge transport layer-electrode layer. Alternatively, the battery cell 20 may include more than two sub-cells, for example, three, four, or more sub-cells.

[0099] Optionally, as shown in Figure 6, the conductive oxide layer 54 extends from the first surface 521 of the second electrode layer 52 to the first surface 511 of the first electrode layer 51; a conductive oxide layer 54 is arranged between the connecting structure 31 and the first electrode layer 51; and a conductive oxide layer 54 is arranged between the second electrode layer 52 and the fourth charge transfer layer 64.

[0100] Optionally, along the first direction, only the region where the second perovskite layer 56 faces the connection structure 31 and the region where the first perovskite layer 53 faces the connection structure 31 are provided with the conductive oxide layer 54 .

[0101] Optionally, the conductive oxide layer 54 is arranged along the second direction from the first surface 521 of the second electrode layer 52 to the first surface 511 of the first electrode layer 51; along the second direction, a conductive oxide layer 54 is arranged between the connecting structure 31 and the first electrode layer 51; along the second direction, no conductive oxide layer 54 is arranged between the second electrode layer 52 and the fourth charge transfer layer 64.

[0102] Optionally, the specific structure of the conductive oxide layer 54 not specifically mentioned in the perovskite cell 1 with a stacked structure can refer to the specific structure of the conductive oxide layer 54 of the non-stacked structure perovskite cell 1 in Figures 1 to 5, and will not be repeated here.

[0103] In this embodiment, the perovskite cell 1 has a stacked structure, and thus can have a higher efficiency. In addition, the provision of the conductive oxide layer 54 can increase the lifespan of the perovskite cell 1.

[0104] In some embodiments, the band gap of the first perovskite layer 53 is greater than the band gap of the second perovskite layer 56. This is beneficial to improving the absorption efficiency of sunlight, thereby improving the photoelectric conversion efficiency.

[0105] Optionally, the band gap of the first perovskite layer 53 is 1.7 eV to 1.9 eV, and the band gap of the second perovskite layer 56 is 0.8 eV to 1.2 eV.

[0106] The band gap can be measured by UV-visible absorption spectroscopy.

[0107] Optionally, the material of the first perovskite layer 53 is Cs 0.35 FA 0.65 PbI 1.8 Br 1.2 ; The material of the second perovskite layer 56 is FA 0.7 MA 0.3 Pb 0.5 Sn 0.5 I3.

[0108] In some embodiments, as shown in Figure 7, the light absorption layer 59 includes a copper indium gallium selenide layer 58, and the battery cell 20 also includes a fifth charge transport layer 65, a copper indium gallium selenide layer 58 and a sixth charge transport layer 66, and a fourth electrode layer 57 located between the first electrode layer 51 and the second charge transport layer 62 and arranged in sequence.

[0109] The perovskite cell 1 shown in FIG7 includes two light absorption layers, namely a copper indium gallium selenide layer 58 and a first perovskite layer 53 . The perovskite cell 1 has a stacked structure and has high efficiency.

[0110] This embodiment provides a perovskite cell 1 including other types of light absorbing layers, which has a stacked structure and can have higher efficiency. In addition, the provision of the conductive oxide layer 54 can increase the life of the perovskite cell 1.

[0111] In some implementations, the second electrode layer 52 and the connecting structure 31 are integrally formed. Alternatively, the second electrode layer 52 and the connecting structure 31 are formed in a single process step. This allows the second electrode layer 52 and the connecting structure 31 to be fabricated in a single process step, which helps reduce production costs.

[0112] Optionally, the connection structure 31 and the second electrode layer 52 are formed through one deposition step.

[0113] In some embodiments, the resistivity of the conductive oxide layer 54 is less than 1*10 -2 Ω·cm, for example, the resistivity of the conductive oxide layer is 10 -3 Ω·cm,10 -4 Ω·cm.

[0114] The resistivity of the conductive oxide layer 54 is the same as or similar to the resistivity of the material of the conductive oxide layer 54 , and can be measured by a resistivity tester.

[0115] In this embodiment, the resistivity of the conductive oxide layer 54 is less than 1*10 -2 Ω·cm. This, on the one hand, helps reduce the risk of increased internal resistance of the perovskite cell 1 due to corrosion of the second electrode layer 52; on the other hand, it can reduce the increase in internal resistance of the perovskite cell 1 caused by the low conductivity or high resistivity of the conductive oxide 54, thereby helping to reduce the power loss of the perovskite cell 1. Therefore, this embodiment is conducive to improving the efficiency of the perovskite cell 1.

[0116] Optionally, the resistivity of the conductive oxide layer 54 is less than 5*10 -3 Ω·cm. This is beneficial to further improve the efficiency of the perovskite cell 1.

[0117] Figure 8 is a schematic diagram of a cell unit of a perovskite battery according to one embodiment of the present application. In some embodiments, as shown in Figure 8 , the thickness d1 of the conductive oxide layer 54 is 5 nm to 100 nm, and may optionally be 20 nm to 50 nm. For example, the thickness d1 of the conductive oxide layer 54 may be 5 nm, 10 nm, 15 nm, 20 nm, 25 nm, 35 nm, 45 nm, or 50 nm.

[0118] Optionally, the conductive oxide layer 54 is a uniform thin layer having substantially the same thickness at different locations. For ease of illustration, this embodiment only illustrates the thickness of the conductive oxide layer 54 between the second charge transport layer 62 and the second electrode layer 52. The thickness of the conductive oxide layer 54 at other locations also falls within this range.

[0119] Optionally, the conductive oxide layer 54 has different thicknesses at different locations. For example, the thickness of the conductive oxide layer 54 between the connection structure 31 and the first perovskite layer 53 is different from the thickness of the conductive oxide layer 54 between the second electrode layer 52 and the second charge transport layer 62. For example, the thickness of the latter is smaller than the thickness of the former.

[0120] The thickness d1 of the conductive oxide layer 54 may be the maximum thickness of the conductive oxide layer 54 .

[0121] The thickness d1 of the conductive oxide layer 54 can be measured by a step profiler.

[0122] When the thickness d1 of the conductive oxide layer 54 is less than 5 nm, the protective effect on the first perovskite layer 53, the connection structure 31 and the second electrode layer 52 is weak, and the stability and life of the perovskite battery 1 are slightly improved; at the same time, the thickness d1 of the conductive oxide layer 54 is too small, which is not conducive to reducing the complexity of the preparation process.

[0123] When the thickness d1 of the conductive oxide layer 54 is greater than 100 nm, the excessive thickness causes the resistance of the perovskite cell 1 to increase, which is not conducive to reducing the power loss of the perovskite cell 1 and improving the efficiency of the perovskite cell 1; at the same time, the excessive thickness will also lead to an increase in production costs.

[0124] In this embodiment, the thickness d1 of the conductive oxide layer 54 is 5 nm to 100 nm. In this way, the protective effect of the conductive oxide layer 54 on the first perovskite layer 53, the connecting structure 31 and the second electrode layer 52 can be taken into account while the efficiency and production cost of the perovskite cell 1 can be improved.

[0125] When the thickness d1 of the conductive oxide layer 54 is 20 nm to 50 nm, the efficiency and life of the perovskite cell 1 can be better balanced. For example, the efficiency of the perovskite cell 1 is higher or the life is longer.

[0126] Optionally, the conductive oxide layer 54 is made of a transparent conductive oxide. In this way, the conductive oxide layer 54 is transparent and the perovskite cell 1 is semi-transparent, which is conducive to timely detection of structural faults in the perovskite cell 1.

[0127] In some embodiments, the material of the conductive oxide layer 54 includes at least one of indium tin oxide (ITO), indium zinc oxide (IZO), tungsten-doped indium oxide (IWO), gallium zinc oxide (GZO), zinc aluminum oxide (AZO), lanthanide metal-doped indium oxide, indium hafnium oxide, indium tantalum oxide, and indium niobium oxide.

[0128] The lanthanide metal-doped indium oxide may include cerium-doped indium oxide, ie, ICO.

[0129] In this embodiment, the conductive oxide layer 54 made of the above-mentioned material is transparent, and the perovskite cell 1 is translucent, which facilitates timely detection of structural faults in the perovskite cell 1. In addition, the conductive oxide layer 54 made of the above-mentioned material is conducive to reducing the resistance of the perovskite cell 1 and thus reducing the power loss of the perovskite cell 1.

[0130] In some embodiments, the material of the first electrode layer 51 is a transparent conductive oxide. This, on the one hand, facilitates the transmission of sunlight through the first electrode layer 51; on the other hand, since both the first electrode layer 51 and the conductive oxide layer 54 are conductive oxides, the contact resistance between the first electrode layer 51 and the conductive oxide layer 54 is low, which helps reduce the power loss of the perovskite cell 1.

[0131] In some embodiments, the material of the first electrode layer 51 includes at least one of indium tin oxide, indium zinc oxide, indium tungsten oxide, gallium zinc oxide, aluminum zinc oxide, and fluorine-doped tin oxide. This ensures that the first electrode layer 51 has good light transmittance and conductivity.

[0132] In some embodiments, the material of the second electrode layer 52 includes Au, Ag, Cu, Al, Ni, Cr, Bi, Pt, Mg, Mo, W, alloys thereof, and carbon materials. Optionally, the carbon material includes at least one of carbon black, graphene, and carbon nanotubes. This ensures that the second electrode layer has good conductivity.

[0133] Optionally, the material of the second electrode layer 52 may further include indium tin oxide, indium zinc oxide, indium tungsten oxide, gallium zinc oxide, zinc aluminum oxide, or lanthanide metal-doped indium oxide.

[0134] In some embodiments, the thickness d2 of the first electrode layer 51 is 300 nm to 800 nm, the thickness d3 of the second electrode layer 52 is 10 nm to 200 nm, and the thickness d4 of the first perovskite layer 53 is 300 nm to 800 nm.

[0135] The thickness d2 of the first electrode layer 51 , the thickness d3 of the second electrode layer 52 , and the thickness d4 of the first perovskite layer 53 may be the maximum thicknesses of the first electrode layer 51 , the second electrode layer 52 , and the first perovskite layer 53 , respectively; and their thicknesses may be measured by a step profiler.

[0136] When the thickness d2 of the first electrode layer 51 is greater than 800 nm, the transmittance of the first electrode layer decreases, which is not conducive to improving the efficiency of the perovskite cell 1. When the thickness d2 of the first electrode layer 51 is less than 300 nm, the conductivity of the first electrode layer is low, making it difficult to ensure the lifespan and efficiency of the perovskite cell 1.

[0137] When the thickness d3 of the second electrode layer 52 is greater than 200 nm, the perovskite cell 1 occupies a large space, which is not conducive to improving the energy density of the perovskite cell 1. When the thickness d3 of the second electrode layer 52 is less than 10 nm, it is difficult to ensure the lifespan and efficiency of the perovskite cell 1.

[0138] When the thickness d4 of the first perovskite layer 53 is greater than 800 nm, the perovskite cell 1 occupies a large space, which is not conducive to improving the energy density of the perovskite cell 1. When the thickness d4 of the first perovskite layer 53 is less than 300 nm, the first perovskite layer 53 is relatively thin and cannot fully absorb incident light, which is not conducive to improving the cell efficiency.

[0139] In this embodiment, by reasonably setting the thickness d2 of the first electrode layer 51 , the thickness d3 of the second electrode layer 52 , and the thickness d4 of the first perovskite layer 53 , the efficiency and energy density of the perovskite cell 1 can be taken into account.

[0140] Optionally, the thickness d2 of the first electrode layer 51 is 400 nm to 600 nm, the thickness d3 of the second electrode layer 52 is 80 nm to 120 nm, and the thickness d4 of the first perovskite layer 53 is 400 nm to 600 nm. This helps to further balance the efficiency and energy density of the perovskite cell 1.

[0141] In some embodiments, the structural formula of the first perovskite layer 53 is ABX3, wherein the ionic radius of A is 0.076nm-0.315nm, the ionic radius of B is 0.06nm-0.15nm, and the ionic radius of X is 0.1nm-0.2nm; optionally, A includes at least one of organic amine cations, Cs, K, Rb, and Li, and B includes at least one of lead, tin, zinc, titanium, antimony, bismuth, nickel, iron, cobalt, silver, copper, gallium, germanium, magnesium, calcium, indium, aluminum, manganese, chromium, molybdenum, and europium; X includes at least one of fluorine, chlorine, bromine, and iodine; optionally, the organic amine cation includes at least one of methylamine ion and formamidine ion.

[0142] The first perovskite layer 53 is made of perovskite. That is, the structural formula of the first perovskite layer 53 is the structural formula of the perovskite used to prepare the first perovskite layer 53 .

[0143] Optionally, the material of the first perovskite layer 53 is a three-dimensional perovskite. For example, when A is an organic amine cation, the organic amine cation is selected from at least one of methylamine ion and formamidine ion.

[0144] In this embodiment, by selecting the perovskite with the above-mentioned structural formula as the material of the first perovskite layer 53 , the efficiency of the perovskite cell 1 can be guaranteed.

[0145] In some embodiments, the first charge transport layer 61 is a hole transport layer and the second charge transport layer 62 is an electron transport layer; or the first charge transport layer 61 is an electron transport layer and the second charge transport layer 62 is a hole transport layer. This facilitates the flexible arrangement of the first and second charge transport layers according to actual needs.

[0146] The battery cell 20 may be a regular structure system or a trans structure system.

[0147] For example, as shown in Figures 6 and 7 , when the battery cell 20 has a regular structure, the first charge transport layer 61 is a hole transport layer, the second charge transport layer 62 is an electron transport layer, the third charge transport layer 63 is a hole transport layer, and the fourth charge transport layer 64 is an electron transport layer. When the battery cell 20 has a trans structure, the first charge transport layer 61 is an electron transport layer, the second charge transport layer 62 is a hole transport layer, the third charge transport layer 63 is an electron transport layer, and the fourth charge transport layer 64 is a hole transport layer.

[0148] In some embodiments, the material of the hole transport layer includes a P-type semiconductor, and the material of the electron transport layer includes an N-type semiconductor; optionally, the material of the hole transport layer includes: thiophene, phthalocyanine, porphyrin, 2,2',7,7'-tetrakis (N,N-dimethoxyaniline)-9,9'-spirobifluorene (Spiro-OMeTAD), molybdenum oxide, vanadium oxide, tungsten oxide, nickel oxide, copper oxide, tin oxide, molybdenum sulfide, tungsten sulfide, copper sulfide, tin sulfide, cuprous thiocyanate, copper iodide, fluorine-containing phosphonic acid, carbonyl-containing phosphonic acid, carbon nanotubes At least one of a tube and graphene; optionally, the material of the electron transport layer includes: [6,6]-phenyl-C61-butyric acid isomethyl ester, C60, cyano-containing polyphenylene vinylene, boron-containing polymer, bathocuproine, bathophenanthroline, hydroxyquinoline aluminum, oxadiazole compounds, benzimidazole compounds, naphthalene tetracarboxylic acid compounds, perylene derivatives, phosphine oxide compounds, phosphine sulfide compounds, fluorine-containing phthalocyanine, titanium oxide, zinc oxide, indium oxide, tin oxide, gallium oxide, tin sulfide, indium sulfide, lithium fluoride, sodium fluoride, magnesium fluoride and zinc sulfide. In this way, it is convenient to flexibly select the materials of the first charge transport layer 61 and the second charge transport layer 62 according to actual needs.

[0149] In some embodiments, the thickness d5 of the first charge transport layer 61 is 10 nm to 200 nm, and the thickness d6 of the second charge transport layer 62 is 10 nm to 200 nm. In this way, the efficiency of the perovskite cell can be guaranteed.

[0150] The thickness d5 of the first charge transport layer 61 or the thickness d6 of the second charge transport layer 62 may be, for example, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 50 nm, 60 nm, 80 nm, 100 nm, 120 nm, 150 nm, 180 nm, or 200 nm.

[0151] When the thickness d5 of the first charge transport layer 61 or the thickness d6 of the second charge transport layer 62 is greater than 200 nm, the perovskite cell 1 occupies a large space, which is not conducive to improving the energy density.

[0152] When the thickness d5 of the first charge transport layer 61 or the thickness d6 of the second charge transport layer 62 is less than 10 nm, it is not conducive to ensuring the performance of the first charge transport layer 61 or the second charge transport layer 62 .

[0153] Optionally, when the material of the first charge transport layer 61 is nickel oxide, the thickness of the first charge transport layer 61 does not exceed 50 nm, for example, 10 nm to 50 nm. When the first charge transport layer 61 is made of other materials, its thickness can reach 200 nm, for example, when the material of the first charge transport layer 61 is Spiro-OMeTAD.

[0154] In some embodiments, the material of substrate 50 includes at least one of glass and a transparent flexible polymer. Alternatively, the transparent flexible polymer includes at least one of polyethylene terephthalate and polyimide. This allows for flexible selection of substrate material based on actual needs, such as whether to prepare a rollable perovskite cell.

[0155] The present application provides an electrical device, comprising the perovskite battery 1 according to any one of the above embodiments, wherein the perovskite battery 1 is used to supply power to the electrical device.

[0156] FIG9 is a schematic diagram of an electric device according to an embodiment of the present application. As shown in FIG9 , the electric device is a vehicle 100 , and the perovskite battery 1 is disposed on the vehicle 100 and is used to supply power to the vehicle 100 or a battery in the vehicle 100 .

[0157] Optionally, the power-consuming device may also be a street lamp, a power storage station or other equipment.

[0158] The above description, in conjunction with Figures 1 to 9 , details the product embodiment of the perovskite cell 1 of the present application. The following description details the method embodiment for preparing the perovskite cell of the present application. It should be understood that for portions of the method embodiment corresponding to the product embodiment, similar descriptions can refer to the product embodiment.

[0159] FIG10 is a schematic diagram of a method for preparing a perovskite cell according to an embodiment of the present application. As shown in FIG10 , the present application provides a method 300 for preparing a perovskite cell, comprising: step 310 and step 320 .

[0160] Step 310: Provide a plurality of battery cells 20 arranged along a first direction.

[0161] The battery cell 20 includes a first electrode layer 51 , a second electrode layer 52 arranged along the second direction, and a first perovskite layer 53 located between the first electrode layer 51 and the second electrode layer 52 .

[0162] Step 320: Provide a connection structure 31.

[0163] The connection structure 31 is used to connect the first electrode layer 51 of the first battery cell 21 and the second electrode layer 52 of the second battery cell 22 adjacent to each other in the plurality of battery cells 20 , wherein a conductive oxide layer 54 is provided between the connection structure 31 and the first perovskite layer 51 .

[0164] In the embodiment of the present application, the perovskite cell 1 prepared by the method 300 has high efficiency and lifespan.

[0165] In some embodiments, step 310 includes: providing a substrate 50 on which a first electrode layer 51 is disposed; sequentially depositing a first charge transport layer 61, a first perovskite layer 53, and a second charge transport layer 62 on the first electrode layer 51; and depositing a second electrode layer 52 on the second charge transport layer 62.

[0166] Step 320 includes: etching the second charge transport layer 62 along the second direction to expose the first electrode layer 51 and form a first groove; and depositing a conductive oxide layer 54 on the second charge transport layer 62 and in the first groove.

[0167] This method can prepare the conductive oxide layer 54 through one-time deposition, which helps to reduce the complexity of the process.

[0168] Optionally, in some embodiments, after the second charge transport layer 62 is etched along the second direction to expose the first electrode layer 51 and form a first groove, a conductive oxide layer 54 is deposited in the first groove; after depositing the conductive oxide layer 54, corresponding materials are deposited on the first groove and the second charge transport layer 62 to form a connecting structure 31 and a second electrode layer 52.

[0169] Optionally, after step 320 , method 300 further includes providing a second isolation structure 33 . Specifically, after forming the second electrode layer 52 , the second electrode layer 52 is etched along the second direction to expose the first electrode layer 51 , thereby forming a second groove. This second groove can serve as the second isolation structure 33 .

[0170] Optionally, before forming the first charge transport layer 61 , the method 300 further includes: etching the first electrode layer 51 along the second direction to expose the substrate 50 , thereby forming a third groove. The third groove can serve as the first isolation structure 32 .

[0171] Example

[0172] Below, the embodiment of the present application is described. The embodiment described below is exemplary and is only used to explain the present application, and is not to be construed as limiting the present application. Where specific techniques or conditions are not specified in the embodiments, the techniques or conditions described in the literature in this area or the product specifications are used. Reagents or instruments used that do not specify the manufacturer are conventional products that can be obtained commercially.

[0173] Example 1

[0174] The structure of Example 1 can be seen in FIG1 . The preparation method of the perovskite cell 1 shown in Example 1 is as follows.

[0175] (1) A 100 mm*100 mm piece of fluorine-doped tin oxide (FTO) conductive glass is taken. The FTO conductive glass is the substrate 50 provided with the first electrode layer 51 .

[0176] (2) After cleaning, the FTO conductive glass is scribed using nanosecond red light to form a P1 groove penetrating the first conductive layer 51 to prepare the first isolation structure 32.

[0177] (3) A layer of nickel oxide with a thickness of 20 nm was prepared on the FTO conductive glass using a magnetron sputtering method to form the first charge transport layer 61 .

[0178] (4) A 1 mol / L MAPbI3 precursor solution was coated on the first charge transport layer 61, and then transferred to a vacuum equipment for 60 seconds, with a vacuum degree of 15 Pa. After the vacuum was completed, the conductive glass prepared with the first charge transport layer 61 was placed on a hot plate at 100°C and annealed for 15 minutes to obtain a MAPbI3 perovskite layer with a thickness of about 500 nm, thereby forming a first perovskite layer 53.

[0179] (5) On the first perovskite layer 53, 25 nm C60, 6 nm BCP, and 20 nm Cu are evaporated by an evaporation method to prepare a second charge transport layer 62, wherein C60 and BCP serve as the second charge transport layer 62, and Cu can play a role in protecting the second charge transport layer 62 during the preparation of the second electrode layer 52.

[0180] (6) The conductive glass having the second charge transport layer 62 is scribed using picosecond green light to form a P2 groove extending along the second direction from the surface of the second charge transport layer 62 away from the first electrode layer 51 to the surface of the first electrode layer 51 close to the second electrode layer 52.

[0181] (7) A mask with grooves is used to cover the device, exposing the area corresponding to the first perovskite layer 53 in the P2 groove, and a 5 nm ITO layer is formed by PVD to form a conductive oxide layer 54.

[0182] (8) 100 nm Cu was evaporated in the P2 slot and on the surface of the second charge transport layer 62 by evaporation to prepare the connection structure 31 and the second electrode layer 52 .

[0183] (9) The second electrode layer 52 is scribed using picosecond green light to expose the surface of the first electrode layer 51 close to the second electrode layer 52 , thereby forming a P3 trench. The P3 trench serves as the second isolation structure 33 .

[0184] Example 2

[0185] The structure of Example 2 is shown in FIG. 2 , which differs from Example 1 in that the conductive oxide layer 54 extends along the second direction from the first surface 521 of the second electrode layer 52 to the first surface 511 of the first electrode layer 51 .

[0186] Example 3

[0187] The structure of Example 3 is shown in FIG3 , and the difference from Example 2 is that a conductive oxide layer 54 is provided between the connection structure 31 and the first electrode layer 51 along the second direction.

[0188] Example 4

[0189] The structure of Example 4 is shown in FIG5 , and the difference from Example 3 is that a conductive oxide layer is provided between the second electrode layer 52 and the second charge transport layer 62 along the second direction.

[0190] Example 5

[0191] The structure of Example 5 can be seen in Figure 6. The difference from Example 4 is that the perovskite cell 1 is a stacked cell structure. In Example 5, the substrate 50 is a glass substrate, the first electrode layer 51 is ITO, the first charge transport layer 61 is NiO, and the first perovskite layer 53 is Cs 0.35 FA 0.65 PbI 1.8 Br 1.2 The second charge transport layer 62 is C60 and SnO2, the third electrode layer 55 is Au, the third charge transport layer 63 is PEDOT:PSS, and the second perovskite layer 56 is FA 0.7 MA 0.3 Pb 0.5 Sn 0.5 I3, the materials of the fourth charge transport layer 64 are C60 and SnO2, and the second electrode layer 52 is Ag.

[0192] Example 6

[0193] The structure of Example 6 can be seen in Figure 7. The perovskite cell 1 is a stacked cell structure. In Example 6, the substrate 50 is a glass substrate, the first conductive layer 51 is Mo, the fifth charge transport layer 65 is PTAA, the light absorption layer 58 is CIGS, the sixth charge transport layer 66 is ZnO, the fourth electrode layer 57 is indium tin oxide, the first charge transport layer 61 is PTAA, and the first perovskite layer 53 is Cs 0.09 FA 0.77 MA 0.14 Pb(I 0.86 Br 0.14 )3, the second charge transport layer 62 is PCBM, and the second electrode layer 52 is indium tin oxide.

[0194] Examples 7-18

[0195] The differences between Examples 7-18 and Example 4 are that the thickness of the ITO layer, i.e., the conductive oxide layer 54, is 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, 2 nm, and 150 nm, respectively.

[0196] Examples 19-23

[0197] The difference between Examples 19 to 23 and Example 8 is that the conductive oxide layer 54 is an IZO layer, a GZO layer, an IWO layer, an ITO layer, an AZO layer, and an ICO layer, respectively.

[0198] Example 24

[0199] The difference between Comparative Example 24 and Example 4 is that the conductive oxide layer 54 is zinc oxide, and the resistivity of zinc oxide is greater than 10 -2 Ω·cm.

[0200] In Examples 1-24, the thickness of the first electrode layer 51 is 500 nm, the thickness of the second electrode layer 52 is 100 nm, the thickness of the first perovskite layer 53 is 500 nm, the thickness of the first charge transport layer 61 is 20 nm, and the thickness of the second charge transport layer 62 is 51 nm.

[0201] Examples 25-30

[0202] The differences between Examples 25-30 and Example 8 lie in the thickness of the first electrode layer 51 , the thickness of the second electrode layer 52 , the thickness of the first charge transport layer 61 , and the thickness of the second charge transport layer 62 .

[0203] Comparative Example 1

[0204] The difference between Comparative Example 1 and Example 1 is that in the perovskite cell 1 , no conductive oxide layer 54 is provided between the first perovskite layer 53 and the connecting structure 31 .

[0205] The resistivity of the conductive oxide layer 54 can be measured by a resistivity tester.

[0206] The perovskite cells prepared in the above examples and comparative examples were tested to measure the efficiency and life of the cells.

[0207] Battery efficiency test method:

[0208] At room temperature and below 2% RH, the standard simulated sunlight (AM1.5G, 100mW / cm 2 ) to test the efficiency of the cell under irradiation, and the efficiency value can be directly measured by a solar simulator.

[0209] Battery life test method:

[0210] After being stored for 1000h in dark state at 25℃ and 50-60%RH, the battery was exposed to standard simulated sunlight (AM1.5G, 100mW / cm 2 ) Test the efficiency of the battery under irradiation, efficiency retention rate = efficiency after storage for 1000h / initial efficiency*100%.

[0211] Experimental results

[0212] The experimental results of different embodiments can be seen in Table 1-Table 2

[0213] As shown in Tables 1 and 2, d1 is the thickness of the conductive oxide layer 54, d2 is the thickness of the first electrode layer 51, d3 is the thickness of the second electrode layer 52, d4 is the thickness of the first perovskite layer 53, d5 is the thickness of the first charge transport layer 61, and d6 is the thickness of the second charge transport layer 62.

[0214] Table 1 Experimental results of Examples 1-24 and Comparative Example 1

[0215]

[0216]

[0217] Table 2 Experimental results of Example 8 and Examples 25-30

[0218]

[0219] As shown in Table 1, when the thickness of the conductive oxide layer is 5nm to 100nm, the perovskite battery has higher efficiency and lifespan; as shown in Comparative Example 1, in the perovskite battery, when the conductive oxide layer is not provided between the first perovskite layer and the connecting structure, the perovskite battery has lower efficiency and lifespan; as shown in Example 17 and Comparative Example 1, when the thickness of the conductive oxide layer is less than 5nm, the lifespan of the perovskite battery is improved, but the improvement effect is weak; as shown in Example 18 and Comparative Example 1, when the thickness of the conductive oxide layer is greater than 150nm, although the perovskite battery has a higher lifespan, the efficiency improvement effect of the battery is weak. As shown in Example 24, when the resistivity of the conductive oxide layer is greater than 10 -2 Ω·cm, the efficiency of the battery is low; combined with Table 1, when the resistivity of the conductive oxide layer is less than 10 -2 Ω·cm, and less than 5*10 -3 Ω·cm, the efficiency of perovskite cells is significantly improved.

[0220] As shown in Table 1, the conductive oxide layer can be made of various materials, such as ITO, IZO, etc.

[0221] As shown in Table 1 and Table 2, by reasonably setting the thicknesses of the first electrode layer, the second electrode layer, the first perovskite layer, the first charge transport layer, and the second charge transport layer, better battery efficiency and life can be achieved.

[0222] It should be noted that the present application is not limited to the above-mentioned embodiments. The above-mentioned embodiments are merely examples, and within the scope of the technical solution of the present application, embodiments having substantially the same structure as the technical concept and exerting the same effects are all included in the technical scope of the present application. In addition, within the scope of the subject matter of the present application, various modifications that can be conceived by those skilled in the art to the embodiments, and other methods constructed by combining some of the constituent elements in the embodiments are also included in the scope of the present application.

Claims

1. A perovskite battery, characterized in that: include: A plurality of battery cells (20) arranged along a first direction, wherein the battery cells (20) include a first electrode layer (51) arranged along a second direction, a second electrode layer (52), and a first perovskite layer (53) located between the first electrode layer (51) and the second electrode layer (52); A connection structure (31), the connection structure (31) being used to connect a first electrode layer (51) of a first battery cell (21) and a second electrode layer (52) of a second battery cell (22) adjacent to each other in the plurality of battery cells (20); Wherein, a conductive oxide layer (54) is provided between the connection structure (31) and the first perovskite layer (53).

2. The perovskite battery according to claim 1, characterized in that: The conductive oxide layer (54) extends from a first surface (521) of the second electrode layer (52) to a first surface (511) of the first electrode layer (51); the first surface (521) of the second electrode layer (52) is a surface of the second electrode layer (52) close to the first electrode layer (51); and the first surface (511) of the first electrode layer (51) is a surface of the first electrode layer (51) close to the second electrode layer (52).

3. The perovskite battery according to claim 1 or 2, characterized in that: The conductive oxide layer (54) is arranged between the connection structure (31) and the first electrode layer (51).

4. The perovskite cell according to any one of claims 1 to 3, characterized in that: The connection structure (31) is a conductive wall extending from a first surface (521) of the second electrode layer (52) to the first electrode layer (51); the first surface (521) of the second electrode layer (52) is a surface of the second electrode layer (52) close to the first electrode layer (51).

5. The perovskite cell according to any one of claims 1 to 4, characterized in that: The battery cell (20) comprises the first electrode layer (51), a first charge transport layer (61), the first perovskite layer (53), a second charge transport layer (62) and the second electrode layer (52) which are sequentially arranged on a substrate (50).

6. The perovskite battery according to claim 5, characterized in that: The conductive oxide layer (54) is arranged between the second electrode layer (52) and the second charge transport layer (62).

7. The perovskite cell according to claim 5 or 6, characterized in that: The battery cell (20) further comprises a light absorbing layer (59) located between the first electrode layer (51) and the second electrode layer (52).

8. The perovskite cell according to claim 7, characterized in that: The light absorption layer (59) includes a second perovskite layer (56), and the battery cell (20) further includes a third electrode layer (55), a third charge transport layer (63), the second perovskite layer (56) and a fourth charge transport layer (64) which are located between the second charge transport layer (62) and the second electrode layer (52) and are arranged in sequence, and the conductive oxide layer (54) is arranged between the connecting structure (31) and the second perovskite layer (56).

9. The perovskite cell according to claim 8, characterized in that: The band gap of the first perovskite layer (53) is greater than the band gap of the second perovskite layer (56).

10. The perovskite battery according to claim 7, characterized in that: The light absorption layer (59) includes a copper indium gallium selenide layer (58), and the battery unit (20) further includes a fifth charge transport layer (65), the indium gallium selenide layer (58), a sixth charge transport layer (66), and a fourth electrode layer (57) which are located between the first electrode layer (51) and the second charge transport layer (62) and are arranged in sequence.

11. The perovskite cell according to any one of claims 1 to 10, characterized in that: The second electrode layer (52) and the connection structure (31) are an integrally formed structure.

12. The perovskite cell according to any one of claims 1 to 11, characterized in that: The resistivity of the conductive oxide layer (54) is less than 1*10 -2 Ω·cm; Optionally, the resistivity of the conductive oxide layer (54) is less than 5*10 -3 Ω·cm.

13. The perovskite cell according to any one of claims 1 to 12, characterized in that: The thickness (d1) of the conductive oxide layer (54) is 5 nm to 100 nm, and can be optionally 20 nm to 50 nm.

14. The perovskite cell according to any one of claims 1 to 13, characterized in that: The material of the conductive oxide layer (54) includes at least one of indium tin oxide, indium zinc oxide, indium tungsten oxide, gallium zinc oxide, zinc aluminum oxide, lanthanide metal-doped indium oxide, indium hafnium oxide, indium tantalum oxide, and indium niobium oxide.

15. The perovskite cell according to any one of claims 1 to 14, characterized in that: The material of the first electrode layer (51) is a transparent conductive oxide.

16. The perovskite cell according to claim 15, characterized in that: The material of the first electrode layer (51) includes at least one of indium tin oxide, indium zinc oxide, indium tungsten oxide, gallium zinc oxide, aluminum zinc oxide, and fluorine-doped tin oxide.

17. The perovskite cell according to any one of claims 1 to 16, characterized in that: The material of the second electrode layer (52) includes: at least one of Au, Ag, Cu, Al, Ni, Cr, Bi, Pt, Mg, Mo, W and their alloys, and carbon materials; optionally, the carbon material includes at least one of carbon black, graphene, and carbon nanotubes.

18. The perovskite cell according to any one of claims 1 to 17, characterized in that: The thickness (d2) of the first electrode layer (51) is 300nm to 800nm, the thickness (d3) of the second electrode layer (52) is 10nm to 200nm, and the thickness (d4) of the first perovskite layer (53) is 300nm to 800nm; optionally, the thickness (d2) of the first electrode layer (51) is 400nm to 600nm, the thickness (d3) of the second electrode layer (52) is 80nm to 120nm, and the thickness (d4) of the first perovskite layer (53) is 400nm to 600nm.

19. The perovskite cell according to any one of claims 1 to 18, characterized in that: The structural formula of the first perovskite layer (53) is ABX3, wherein: The ionic radius of A is 0.076nm~0.315nm, the ionic radius of B is 0.06nm~0.15nm, and the ionic radius of X is 0.1nm~0.2nm; Optionally, A includes at least one of an organic amine cation, Cs, K, Rb, and Li, B includes at least one of lead, tin, zinc, titanium, antimony, bismuth, nickel, iron, cobalt, silver, copper, gallium, germanium, magnesium, calcium, indium, aluminum, manganese, chromium, molybdenum, and europium, and X includes at least one of fluorine, chlorine, bromine, and iodine; Optionally, the organic amine cation includes at least one of methylamine ion and formamidine ion.

20. The perovskite cell according to any one of claims 5 to 19, characterized in that: The first charge transport layer (61) is a hole transport layer, and the second charge transport layer (62) is an electron transport layer; or the first charge transport layer (61) is an electron transport layer, and the second charge transport layer (62) is a hole transport layer.

21. The perovskite cell according to claim 20, characterized in that: The material of the hole transport layer includes a P-type semiconductor, and the material of the electron transport layer includes an N-type semiconductor; Optionally, the material of the hole transport layer includes at least one of thiophene, phthalocyanine, porphyrin, 2,2',7,7'-tetrakis(N,N-di-p-methoxyaniline)-9,9'-spirobifluorene, molybdenum oxide, vanadium oxide, tungsten oxide, nickel oxide, copper oxide, tin oxide, molybdenum sulfide, tungsten sulfide, copper sulfide, tin sulfide, cuprous thiocyanate, copper iodide, fluorine-containing phosphonic acid, carbonyl-containing phosphonic acid, carbon nanotubes and graphene; Optionally, the material of the electron transport layer includes: [6,6]-phenyl-C61-butyric acid isomethyl ester, C60, cyano-containing polyphenylene vinylene, boron-containing polymer, bathocuproine, bathophenanthroline, hydroxyquinoline aluminum, oxadiazole compounds, benzimidazole compounds, naphthalenetetracarboxylic acid compounds, perylene derivatives, phosphine oxide compounds, phosphine sulfide compounds, fluorine-containing phthalocyanine, titanium oxide, zinc oxide, indium oxide, tin oxide, gallium oxide, tin sulfide, indium sulfide, lithium fluoride, sodium fluoride, magnesium fluoride and zinc sulfide. At least one of the group.

22. The perovskite cell according to any one of claims 5 to 21, characterized in that: The thickness (d5) of the first charge transport layer (61) is 10 nm to 200 nm, and the thickness (d6) of the second charge transport layer (62) is 10 nm to 200 nm.

23. The perovskite cell according to any one of claims 5 to 22, characterized in that: The material of the substrate (50) includes: at least one of glass and a transparent flexible polymer; optionally, the transparent flexible polymer includes at least one of polyethylene terephthalate and polyimide.

24. An electrical device, characterized in that: It comprises the perovskite cell according to any one of claims 1 to 23, wherein the perovskite cell is used to supply power to the electrical device.

25. A method for preparing a perovskite battery, characterized in that: include: Providing (310) a plurality of battery cells (20) arranged along a first direction, wherein the battery cells (20) include a first electrode layer (51) arranged along a second direction, a second electrode layer (52), and a first perovskite layer (53) located between the first electrode layer (51) and the second electrode layer (52); A connection structure (31) is provided (320), wherein the connection structure (31) is used to connect a first electrode layer (51) of a first battery cell (21) and a second electrode layer (52) of a second battery cell (22) adjacent to each other in the plurality of battery cells (20), wherein a conductive oxide layer (54) is provided between the connection structure (31) and the first perovskite layer (53).

26. The method according to claim 25, characterized in that The method of providing (310) a plurality of battery cells (20) arranged along a first direction comprises: Providing a substrate (50), wherein the first electrode layer (51) is disposed on the substrate (50); Depositing a first charge transport layer (61), a first perovskite layer (53), and a second charge transport layer (62) on the first electrode layer (51) in sequence; depositing the second electrode layer (52) on the second charge transport layer (62); The providing (320) of the connection structure (31) comprises: Etching the second charge transport layer (62) along the second direction to expose the first electrode layer (51) and form a first groove; The conductive oxide layer (54) is deposited on the second charge transport layer (62) and within the first grooves.

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