Vertical deposition equipment for synthetic quartz

Abstract

The invention relates to the technical field of synthetic quartz production, and provides synthetic quartz vertical deposition equipment which comprises a reaction main body, a mandrel, a supply main body, a gas supply assembly, a combustor and an exhaust device, and the reaction main body is provided with a reaction cavity; the mandrel is arranged in the reaction cavity, and the axial direction of the mandrel extends in the vertical direction; the supply main body is connected with the reaction main body; a supply window communicated with the reaction cavity is arranged between the supply main body and the reaction main body; the air supply assembly is arranged on the supply main body and communicated with the supply window; the combustor is arranged between the supply main body and the reaction main body, and the output end of the combustor faces the interior of the reaction cavity; the exhaust device is arranged on the reaction main body and is communicated with the reaction cavity and the outside. The vertical deposition furnace is adopted, the core shaft is used for depositing SiO2 soot products, the axial direction of the core shaft vertically extends to be perpendicular to the ground, and the combustor is arranged on one side of the core shaft, so that crystalline substances on the upper wall of a reaction cavity point are prevented from falling off to pollute the products.

Description

Technical Field

[0001] The invention relates to the technical field of synthetic quartz production, in particular to synthetic quartz vertical deposition equipment. Background Art

[0002] Quartz glass has excellent optical and physical and chemical properties. Optically, it has a high transmittance from ultraviolet to infrared rays. Physically and chemically, it is corrosion-resistant, has a low thermal expansion coefficient, and is resistant to high temperatures. Therefore, it is widely used in semiconductor equipment components.

[0003] Quartz glass is divided into natural quartz and synthetic quartz. Natural quartz is made by melting low-purity natural quartz powder at high temperature to remove impurities. Synthetic quartz is made of SiCl4, OMCTS {[(CH3)2SiO]4} through OCD (Outside chemical deposit), VAD (Vapor Phase Axial Deposition) and other processes. Synthetic quartz has higher purity, fewer defects and more stable performance than natural quartz. In the semiconductor industry, especially in advanced processes, synthetic quartz has a tendency to gradually replace natural quartz.

[0004] In OCD-related technologies, the deposition mandrel of the synthetic quartz deposition equipment is placed horizontally, and the burner is placed below the mandrel. The raw materials, fuel, auxiliary gas, flame, etc. are directed upward toward the mandrel to deposit SiO2. Unreacted raw materials, SiO2 not deposited on the mandrel, gases, etc. are discharged after being filtered by the scrubber through the exhaust pipe above the mandrel. Under this structure, unreacted raw materials will crystallize on the upper exhaust pipe or the inner wall above the reaction chamber. If the crystals fall onto the mandrel below, they will contaminate the SiO2 soot deposited on the mandrel, causing defects and pollution in the final product. Summary of the invention

[0005] The present invention aims to solve at least one of the technical problems existing in the related art. To this end, the present invention proposes a synthetic quartz vertical deposition device, which aims to reduce the pollution of SiO2 soot on the core shaft by using a vertical deposition furnace.

[0006] A synthetic quartz vertical deposition apparatus according to an embodiment of the present invention comprises: A reaction body, wherein the reaction body is provided with a reaction chamber; A mandrel, the mandrel being disposed in the reaction chamber, and the axial direction of the mandrel extending in a vertical direction; A supply body, the supply body is connected to the reaction body, and a supply window communicating with the reaction chamber is provided between the supply body and the reaction body; An air supply component, the air supply component is arranged on the supply body and communicated with the supply window; A burner, the burner is arranged between the supply body and the reaction body, and the output end of the burner faces the reaction chamber; An exhaust device is provided at the reaction body and connects the reaction chamber with the outside.

[0007] According to the synthetic quartz vertical deposition equipment of the embodiment of the present invention, a vertical deposition furnace is adopted, the mandrel is used to deposit SiO2 soot products, the axial direction of the mandrel extends vertically to be perpendicular to the ground, and the burner is on one side of the mandrel to prevent the upper wall crystallized material of the reaction chamber from falling and contaminating the product. At the same time, the equipment adds a gas supply component, which can set a specific pressure threshold. When the cavity pressure is lower than the threshold, air is automatically introduced, and gas is supplied to the reaction chamber through the supply window between the supply body and the reaction body. The reaction chamber is exhausted from the exhaust device, thus ensuring the stability of the cavity deposition environment and improving the deposition stability and efficiency.

[0008] According to one embodiment of the present invention, the synthetic quartz vertical deposition equipment also includes a driving assembly, the driving assembly includes a first driving member and a rotating shaft, the first driving member is arranged on the reaction body, the rotating shaft is arranged at the output end of the first driving member and is connected to the core shaft, and the rotating shaft is coaxially arranged with the core shaft.

[0009] According to one embodiment of the present invention, the driving assembly further comprises a support shaft, one end of the support shaft is connected to an end of the core shaft away from the rotating shaft, the other end of the support shaft is connected to the reaction body, and the support shaft is coaxially arranged with the core shaft.

[0010] According to one embodiment of the present invention, the synthetic quartz vertical deposition equipment includes a vaporizer, which is connected to the burner and is used to convert liquid raw materials into gaseous state.

[0011] According to one embodiment of the present invention, the supply window is provided with a plurality of gas outlet channels connected to the reaction chamber, and the gas supply component comprises: A flow divider, the flow divider is arranged on the supply body and connected to the supply window, and the flow divider is connected to the plurality of gas outlet channels respectively; A flow controller is arranged on the supply body and connected to the flow divider, and the flow controller is connected to an external gas source.

[0012] According to one embodiment of the present invention, the synthetic quartz vertical deposition equipment is provided with two supply windows, and the synthetic quartz vertical deposition equipment includes two groups of gas supply components, the two groups of gas supply components are arranged at intervals on the supply body, and each group of gas supply components is connected to one supply window.

[0013] According to one embodiment of the present invention, the exhaust device comprises: An exhaust pipe, which is arranged at the reaction body and connects the reaction chamber with the outside world; A shell, the shell being connected to the outer wall of the exhaust pipe and having a mounting cavity; a second driving member, the second driving member being arranged in the installation cavity, and an output shaft of the second driving member being passed through the exhaust pipe; The baffle is arranged on the output shaft of the second driving member, and the second driving member drives the baffle to rotate to open or block the exhaust pipe.

[0014] According to an embodiment of the present invention, the exhaust device comprises a plurality of the exhaust devices, a plurality of exhaust pipes are arranged at intervals in the reaction body, and each exhaust pipe is connected between the reaction chamber and the outside.

[0015] According to one embodiment of the present invention, the exhaust device includes a dust collector, which is disposed on the reaction body and connects the plurality of exhaust pipes and the reaction chamber, and the dust collector is flared toward the reaction chamber.

[0016] According to an embodiment of the present invention, the exhaust device includes a heat dissipation fan, the shell is provided with a heat dissipation hole connecting the installation cavity and the outside, and the heat dissipation fan is arranged in the heat dissipation hole.

[0017] Additional aspects and advantages of the present invention will be given in part in the following description and in part will be obvious from the following description, or will be learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or related technologies, the drawings required for use in the embodiments or related technical descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0019] Figure 1 It is a schematic side view of the structure of a synthetic quartz vertical deposition device provided in an embodiment of the present invention.

[0020] Figure 2 It is a schematic diagram of the top view of the structure of the synthetic quartz vertical deposition equipment provided in an embodiment of the present invention.

[0021] Figure 3 It is a schematic diagram of the structure of the exhaust device provided in an embodiment of the present invention.

[0022] Reference numerals: 100, reaction body; 110, core shaft; 120, first driving member; 130, rotating shaft; 10, SiO2 soot; 200, supply body; 210, supply window; 220, burner; 230, diverter; 240, flow controller; 300, exhaust device; 310, dust collector; 320, exhaust pipe; 330, baffle; 340, second driving member; 350, housing; 360, cooling fan. DETAILED DESCRIPTION

[0023] The following embodiments of the present invention are described in further detail in conjunction with the accompanying drawings and examples. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0024] In the description of the embodiments of the present invention, it should be noted that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the embodiments of the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as limitations on the embodiments of the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.

[0025] In the description of the embodiments of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "connected" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms in the embodiments of the present invention can be understood according to specific circumstances.

[0026] In the embodiments of the present invention, unless otherwise clearly specified and limited, the first feature being "above" or "below" the second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, the first feature being "above", "above" and "above" the second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. The first feature being "below", "below" and "below" the second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0027] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the embodiment of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0028] Please refer to Figure 1 and Figure 2 According to an embodiment of the present invention, the synthetic quartz vertical deposition equipment includes a reaction body 100, a core shaft 110, a supply body 200, a gas supply assembly, a burner 220 and an exhaust device 300. The reaction body 100 is provided with a reaction chamber; the core shaft 110 is arranged in the reaction chamber, and the axial direction of the core shaft 110 extends along the vertical direction; the supply body 200 is connected to the reaction body 100, and a supply window 210 connecting the reaction chamber is provided between the supply body 200 and the reaction body 100; the gas supply assembly is arranged in the supply body 200 and connected to the supply window 210; the burner 220 is arranged between the supply body 200 and the reaction body 100, and the output end of the burner 220 faces the reaction chamber; the exhaust device 300 is arranged in the reaction body 100, and connects the reaction chamber with the outside.

[0029] According to the synthetic quartz vertical deposition equipment of the embodiment of the present invention, a vertical deposition furnace is adopted, and the mandrel 110 is used to deposit SiO2 soot 10 products. The axial direction of the mandrel 110 extends vertically to be perpendicular to the ground, and the burner 220 is on one side of the mandrel 110 to prevent the upper wall crystallized material of the reaction chamber from falling and contaminating the product. At the same time, the equipment adds a gas supply component, which can set a specific pressure threshold, automatically intake air, and supply gas to the reaction chamber through the supply window 210 between the supply body 200 and the reaction body 100. The reaction chamber is exhausted from the exhaust device 300, thus ensuring the stability of the cavity deposition environment and improving the deposition stability and efficiency.

[0030] It can be understood that the reaction body 100 is placed vertically to ensure that the reaction chamber has sufficient space in the vertical direction to install the mandrel 110. The mandrel 110 is a deposition base and a basic component in the deposition process of synthetic quartz glass, and is usually located in the center of the reaction chamber. Silicon-containing compounds (such as SiCl4, OMCTS, etc.) are hydrolyzed at high temperature in a hydrogen-oxygen flame to generate SiO2 particles, which are deposited layer by layer on the mandrel 110. The axial vertical extension of the mandrel 110, that is, the mandrel 110 is placed vertically perpendicular to the ground, can basically eliminate the bending of the mandrel 110, so that the mandrel 110 is more accurately located in the center.

[0031] The reaction body 100 and the supply body 200 are used as shells to form a reaction chamber and a supply chamber respectively, thereby protecting the internal structure. The supply body 200 is equipped with a gas supply component to pass external pure air into the reaction chamber to ensure the stability of the gas environment in the chamber.

[0032] In this embodiment, the burner 220 is located on one side of the mandrel 110 and provides necessary heat and hydrolysis conditions of the silicon-containing compound toward the mandrel 110. Optionally, the burner 220 completes the mixing and combustion of hydrogen and oxygen to generate a high-temperature flame, providing necessary heat and hydrolysis conditions for the synthesis of quartz glass. The water vapor generated by the combustion of hydrogen and oxygen in the burner 220 undergoes a thermal hydrolysis reaction with the gaseous silicon-containing compound to generate silicon dioxide particles, which are then deposited on the mandrel to form a dense silicon dioxide soot layer. The design of the burner 220 allows hydrogen and oxygen to be evenly mixed with the vaporized raw materials, thereby achieving more stable and thorough combustion, which is crucial to improving the quality and production efficiency of synthetic quartz. The burner 220 includes a buffer bag and a buffer cavity, as well as a material protection through pipe. These designs help solve the problem of uneven feeding and blockage caused by gaseous silicon tetrachloride directly entering the burner 220 when it condenses into a liquid state.

[0033] According to one embodiment of the present invention, the synthetic quartz vertical deposition equipment also includes a driving assembly, which includes a first driving member 120 and a rotating shaft 130. The first driving member 120 is arranged on the reaction body 100, and the rotating shaft 130 is arranged at the output end of the first driving member 120 and is connected to the core shaft 110. The rotating shaft 130 is coaxially arranged with the core shaft 110.

[0034] It can be understood that the first driving member 120 drives the rotating shaft 130 to drive the mandrel to rotate. The first driving member 120 can be installed at the top of the reaction body 100. At this time, the rotating shaft 130 is located below the first driving member 120 and connected to the mandrel. The mandrel 110 is suspended in the reaction chamber to prevent the rotating shaft 130 from being under pressure. Of course, in other embodiments, the first driving member 120 can also be installed at the bottom of the reaction body 100. At this time, the rotating shaft 130 is located above the first driving member 120 and connected to the mandrel. In this way, the mandrel 110 not only supports the growing quartz soot, but also ensures the uniform deposition of the soot layer by rotation. Exemplarily, the first driving member 120 is a motor that can drive the rotating shaft 130 to rotate and lift. In this way, in the reaction chamber, the rotation and lifting movements of the mandrel 110 are combined into one, which is realized by one motor, so that the uniform deposition and quality of the quartz glass can be ensured. Optionally, the first driving member 120 includes a detector for detecting the SiO 2 soot 10, and is automatically shut down after the deposition reaches a set thickness.

[0035] According to one embodiment of the present invention, the drive assembly further comprises a support shaft, one end of the support shaft is connected to one end of the mandrel 110 away from the rotating shaft 130, the other end of the support shaft is connected to the reaction body 100, and the support shaft is coaxially arranged with the mandrel 110. It can be understood that in order to improve the rotation stability of the mandrel, one end of the mandrel 110 is connected to the rotating shaft 130, and the other end is connected to the support shaft to support the mandrel. Exemplarily, the first driving member 120 and the rotating shaft 130 are connected to the upper end of the mandrel 110, and the support shaft is connected to the lower end of the mandrel 110 and supported on the bottom wall of the reaction chamber.

[0036] According to one embodiment of the present invention, the synthetic quartz vertical deposition equipment includes a vaporizer, which is connected to the burner 220 and is used to convert liquid raw materials into gaseous state. The main function of the vaporizer is to heat the liquid silicon source raw material (such as SiCl4) to a certain temperature, volatilize it into gaseous state, and transport the gaseous silicon source raw material to the burner 220 for subsequent chemical reactions. At the outlet of the burner 220, the gaseous raw material provided by the vaporizer reacts with the hydrogen-oxygen flame to generate glassy SiO2.

[0037] According to one embodiment of the present invention, the supply window 210 is provided with a plurality of gas outlet channels connected to the reaction chamber, and the gas supply component includes a diverter 230 and a flow controller 240. The diverter 230 is arranged on the supply body 200 and connected to the supply window 210, and the diverter 230 is respectively connected to the plurality of gas outlet channels; the flow controller 240 is arranged on the supply body 200 and connected to the diverter 230, and the flow controller 240 is connected to an external gas source.

[0038] It is understandable that the exhaust gas discharge will cause the pressure in the reaction chamber to decrease. The traditional mode is to open a specific inlet from time to time manually and increase the pressure by natural air intake to stabilize the deposition environment. However, if the reaction chamber is too large, this pressure replenishment method is less effective and not timely, which in turn affects the deposition stability and deposition efficiency of SiO2 soot 10, resulting in poor product uniformity. To this end, a specific pressure is set through the flow controller 240, and air intake is automatically performed. The intake air is transported to the outlet channel through the diverter 230, thereby providing intake air to the reaction chamber, ensuring the stability of the deposition environment of the reaction chamber, and improving the deposition stability and efficiency. Optionally, the flow controller 240 can automatically discharge exhaust gas and provide intake air according to the pressure of the reaction chamber to ensure the stability of the silicon dioxide deposition environment and ensure the uniformity and deposition efficiency of the product.

[0039] According to one embodiment of the present invention, the synthetic quartz vertical deposition device is provided with two supply windows 210, and the synthetic quartz vertical deposition device includes two groups of gas supply components, which are arranged at intervals on the supply body 200, and each group of gas supply components is connected to a supply window 210. It can be understood that each supply window 210 is installed to a different position of the reaction chamber, such as the left and right sides of the reaction chamber, and is symmetrically arranged to improve the uniformity of the gas intake in the reaction chamber. At the same time, each group of gas supply components supplies gas to a supply window 210, thereby improving the gas intake efficiency, thereby improving the deposition stability and efficiency.

[0040] like Figure 3 As shown, according to one embodiment of the present invention, the exhaust device 300 includes an exhaust pipe 320, a shell 350, a second driving member 340 and a baffle 330. The exhaust pipe 320 is arranged in the reaction body 100 and connects the reaction chamber and the outside; the shell 350 is connected to the outer wall of the exhaust pipe 320, and the shell 350 is provided with an installation cavity; the second driving member 340 is arranged in the installation cavity, and the output shaft of the second driving member 340 is passed through the exhaust pipe 320; the baffle 330 is arranged on the output shaft of the second driving member 340, and the second driving member 340 drives the baffle 330 to rotate to open or block the exhaust pipe 320.

[0041] It can be understood that the exhaust pipe 320 is used to discharge the exhaust gas in the reaction chamber, and the baffle 330 can be in the shape of a disc. The baffle 330 is arranged on the output shaft of the second driving member 340. When the baffle 330 is perpendicular to the axial direction of the exhaust pipe 320, the exhaust pipe 320 is closed. When the baffle 330 is parallel to the axial direction of the exhaust pipe 320, the exhaust pipe 320 is opened, and exhaust treatment can be performed at this time. The baffle 330 is driven to rotate by the second driving member 340, so that the baffle 330 opens or blocks the exhaust pipe 320, and exhaust treatment is performed only when necessary. The housing 350 is used to protect the second driving member 340, and the second driving member 340 can be a servo motor.

[0042] like Figure 1As shown, according to one embodiment of the present invention, the exhaust device 300 includes a plurality of exhaust devices 300, a plurality of exhaust pipes 320 are arranged at intervals in the reaction body 100, and each exhaust pipe 320 connects the reaction chamber with the outside. It can be understood that the plurality of exhaust devices 300 are arranged in sequence in the vertical direction to exhaust corresponding to a plurality of positions in the vertical direction of the reaction chamber, thereby improving the exhaust efficiency and exhaust uniformity.

[0043] According to one embodiment of the present invention, the exhaust device 300 includes a dust collector 310, which is arranged in the reaction body 100 and connected to a plurality of exhaust pipes 320 and the reaction chamber, and the dust collector 310 is expanded toward the reaction chamber. Exemplarily, the diameter of the side of the dust collector 310 connected to the exhaust pipe 320 is smaller, and the diameter of the dust collector 310 gradually increases in the direction toward the reaction chamber. It can be understood that the dust collector 310 is conducive to the exhaust gas in the reaction chamber to converge into the exhaust pipe 320, thereby improving the exhaust efficiency.

[0044] like Figure 3 As shown, according to one embodiment of the present invention, the exhaust device 300 includes a heat dissipation fan 360, and the housing 350 is provided with a heat dissipation hole connecting the installation cavity and the outside, and the heat dissipation fan 360 is arranged at the heat dissipation hole. It can be understood that the heat dissipation fan 360 is used to dissipate heat from the installation cavity to avoid the second driving member 340 from being overheated. Optionally, the housing 350 is provided with at least two heat dissipation holes, and the two heat dissipation holes can be symmetrically arranged, and each heat dissipation hole is equipped with a heat dissipation fan 360, one of the heat dissipation fans 360 blows air toward the installation cavity, and the other heat dissipation fan 360 blows air toward the outside of the installation cavity, that is, one heat dissipation fan 360 realizes air intake of the installation cavity, and the other heat dissipation fan 360 realizes exhaust of the installation cavity, so as to realize gas convection in the installation cavity and improve heat dissipation efficiency.

[0045] Finally, it should be noted that the above embodiments are only used to illustrate the present invention, rather than to limit the present invention. Although the present invention is described in detail with reference to the embodiments, it should be understood by those skilled in the art that various combinations, modifications or equivalent substitutions of the technical solutions of the present invention do not depart from the spirit and scope of the technical solutions of the present invention, and should be included in the scope of the claims of the present invention.

Claims

1. A synthetic quartz vertical deposition device, characterized in that: include: A reaction body, wherein the reaction body is provided with a reaction chamber; A mandrel, the mandrel being disposed in the reaction chamber, and the axial direction of the mandrel extending in a vertical direction; A supply body, the supply body is connected to the reaction body, and a supply window communicating with the reaction chamber is provided between the supply body and the reaction body; An air supply component, the air supply component is arranged on the supply body and communicated with the supply window; A burner, the burner is arranged between the supply body and the reaction body, and the output end of the burner faces the reaction chamber; An exhaust device is provided at the reaction body and connects the reaction chamber with the outside.

2. The synthetic quartz vertical deposition equipment according to claim 1, characterized in that: The synthetic quartz vertical deposition equipment also includes a driving assembly, which includes a first driving member and a rotating shaft. The first driving member is arranged on the reaction body, and the rotating shaft is arranged at the output end of the first driving member and connected to the core shaft. The rotating shaft is coaxially arranged with the core shaft.

3. The synthetic quartz vertical deposition equipment according to claim 2, characterized in that: The driving assembly also includes a support shaft, one end of which is connected to an end of the core shaft away from the rotating shaft, and the other end of the support shaft is connected to the reaction body, and the support shaft is coaxially arranged with the core shaft.

4. The synthetic quartz vertical deposition equipment according to claim 1, characterized in that: The synthetic quartz vertical deposition equipment includes a vaporizer connected to the burner, and the vaporizer is used to convert liquid raw materials into gaseous state.

5. The synthetic quartz vertical deposition equipment according to claim 1, characterized in that: The supply window is provided with a plurality of gas outlet channels connected to the reaction chamber, and the gas supply component comprises: A flow divider, the flow divider is arranged on the supply body and connected to the supply window, and the flow divider is connected to the plurality of gas outlet channels respectively; A flow controller is arranged on the supply body and connected to the flow divider. The flow controller is connected to an external air source, and the air source is pure air.

6. The synthetic quartz vertical deposition apparatus according to claim 5, characterized in that: The synthetic quartz vertical deposition equipment is provided with two supply windows, and the synthetic quartz vertical deposition equipment includes two groups of gas supply components, the two groups of gas supply components are arranged at intervals on the supply body, and each group of gas supply components is connected to one supply window.

7. The synthetic quartz vertical deposition apparatus according to any one of claims 1 to 6, characterized in that: The exhaust device comprises: An exhaust pipe, which is arranged at the reaction body and connects the reaction chamber with the outside world; A shell, the shell being connected to the outer wall of the exhaust pipe and having a mounting cavity; a second driving member, the second driving member being arranged in the installation cavity, and an output shaft of the second driving member being passed through the exhaust pipe; The baffle is arranged on the output shaft of the second driving member, and the second driving member drives the baffle to rotate to open or block the exhaust pipe.

8. The synthetic quartz vertical deposition apparatus according to claim 7, characterized in that: The exhaust device includes a plurality of exhaust devices, and a plurality of exhaust pipes are arranged at intervals on the reaction body, and each exhaust pipe is connected with the reaction chamber and the outside.

9. The synthetic quartz vertical deposition apparatus according to claim 8, characterized in that: The exhaust device comprises a dust collector, which is arranged on the reaction body and connected with the plurality of exhaust pipes and the reaction chamber, and the dust collector is expanded toward the reaction chamber.

10. The synthetic quartz vertical deposition apparatus according to claim 7, characterized in that: The exhaust device comprises a heat dissipation fan, the shell is provided with a heat dissipation hole communicating with the installation cavity and the outside, and the heat dissipation fan is arranged in the heat dissipation hole.

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