Crimping type IGBT junction temperature measuring equipment, method and device based on thermal network

Abstract

The embodiment of the invention provides crimping type IGBT junction temperature measuring equipment, method and device based on a thermal network, and the method comprises the steps: determining the power consumption of a single chip in an IGBT device based on a port voltage and a current signal, according to the power consumption, the energy of the collector and the emitter of the tested elastic crimping sub-module, the temperature of the collector and the emitter and the junction temperature of the chip, the thermal resistance of the collector and the emitter is determined; determining the chip junction temperature in the target elastic crimping sub-module according to the power consumption, the energy of the collector and the emitter of the target elastic crimping sub-module, the temperature of the collector and the emitter, and the thermal resistance of the collector and the emitter; the problem that the chip junction temperature cannot be obtained online due to the fact that the crimping structure is compact can be solved.

Description

Technical Field

[0001] The present application relates to the field of temperature detection, and in particular to a thermal network-based crimped IGBT junction temperature measurement device, method and apparatus. Background Art

[0002] The press-fit IGBT module is a power electronic device designed for high-power and high-reliability applications. It has a unique double-sided heat dissipation and leadless packaging structure, which can effectively dissipate heat through both sides of the collector and emitter, thereby reducing thermal resistance and increasing heat dissipation efficiency. Due to these design features, the press-fit IGBT module exhibits extremely high reliability and a wide safe operating area in industrial applications. In addition, due to its advantages of high power density and failure short-circuit mode, it can still operate reliably in the face of harsh working conditions. In the direct series application of flexible DC transmission converter valves, the press-fit IGBT module has become the first choice.

[0003] However, due to the high power density of the press-fit IGBT module, a large amount of heat is generated during operation. When the module operates for a long time in an environment with high junction temperature and large temperature fluctuations, the internal chip may age faster, thus affecting the reliability of the device. Especially under high-temperature working conditions, the junction temperature of the device is difficult to effectively reduce, and temperature fluctuations further increase the heat dissipation load, resulting in a shortened device life.

[0004] In the prior art, the heat dissipation capacity of the press-fit IGBT module is still insufficient, and its internal structure is tight, making it difficult to extract and analyze the thermal network. Although the heat transfer path between the layers of materials and structures inside the thermal network, understanding and optimizing this path helps to better manage the heat dissipation performance of the device. However, due to the compact packaging structure and complex internal heat transfer path, it is difficult for existing methods to directly obtain an accurate thermal network model. Therefore, the prior art cannot effectively reduce the operating junction temperature of the device, limiting the current flow capacity of the module under high current load.

[0005] More importantly, multiple chips in a press-fit IGBT module are usually connected in parallel, and each chip will produce different heat distributions during operation, making the measurement of junction temperature more complicated. Due to the tightness of the package and the lack of knowledge of the thermal network, it is difficult for existing temperature measurement technology to accurately measure the junction temperature distribution of each chip online. This makes it difficult for designers to monitor the thermal conditions of internal chips in real time and to ensure the stable operation of the module through dynamic adjustments. Summary of the invention

[0006] In response to the problems in the prior art, the present application provides a thermal network-based crimped IGBT junction temperature measurement device, method and apparatus, which can solve the problem that the chip junction temperature cannot be obtained online due to the tight crimping structure.

[0007] In order to solve at least one of the above problems, the present application provides the following technical solutions:

[0008] According to a first aspect of an embodiment of the present application, the present application provides a thermal network-based crimped IGBT junction temperature measurement device, comprising a chip temperature measurement thermocouple, an emitter temperature measurement thermocouple, a collector temperature measurement thermocouple, a plurality of insulating thermal insulation boards, a voltage probe, a PCB Rogowski coil, a plurality of Rogowski coil radio frequency terminals and a junction temperature measurement unit;

[0009] The chip temperature measuring thermocouple is used to collect the chip junction temperature of a tested elastic pressing submodule in the IGBT device, wherein the IGBT device is composed of a plurality of elastic pressing submodules connected in parallel;

[0010] The emitter temperature measuring thermocouple is used to collect the emitter side temperature in the elastic crimping submodule under test and the target elastic crimping submodule;

[0011] The collector temperature measuring thermocouple is used to collect the collector side temperature in the elastic crimping submodule under test and the target elastic crimping submodule;

[0012] The plurality of insulating and heat-insulating plates are arranged between the elastic crimping submodule to be tested and the adjacent submodule to form electrical and thermal isolation;

[0013] The voltage probe is used to collect the terminal voltages of the collector and the emitter in the elastic crimping submodule;

[0014] The PCB Rogowski coil is arranged on the current path of the IGBT device and is used to collect current signals of multiple chips in the IGBT device;

[0015] The multiple Rogowski coil radio frequency terminals are arranged at the output end of the PCB Rogowski coil, and are used to transmit the current signals of the multiple chips in the IGBT device to the junction temperature measurement unit;

[0016] The junction temperature measurement unit is used to determine the power consumption of a single chip in the IGBT device based on the port voltage and the current signal, and determine the collector and emitter thermal resistance according to the power consumption, the energy of the collector and emitter of the tested elastic pressing sub-module, the collector and emitter temperature, and the chip junction temperature, and determine the chip junction temperature in the target elastic pressing sub-module according to the power consumption, the energy of the collector and emitter of the target elastic pressing sub-module, the collector and emitter temperature, and the collector and emitter thermal resistance.

[0017] According to a second aspect of an embodiment of the present application, the present application provides a method for measuring junction temperature of a press-fit IGBT based on a thermal network, which is applied to a junction temperature measurement unit, and the method includes:

[0018] Determine the power consumption of a single chip in the IGBT device based on the port voltage and the current signal;

[0019] Determine the energy of the collector and emitter of the elastic compression submodule under test according to the power consumption, and determine the collector and emitter thermal resistance according to the energy of the collector and emitter of the elastic compression submodule under test, the collector and emitter temperature and the chip junction temperature;

[0020] The energy of the collector and emitter of the target elastic compression submodule is determined according to the power consumption, and the chip junction temperature in the target elastic compression submodule is determined according to the energy of the collector and emitter of the target elastic compression submodule, the collector and emitter temperature and the collector and emitter thermal resistance.

[0021] According to any embodiment of the present application, determining the power consumption of a single chip in the IGBT device based on the port voltage and the current signal includes:

[0022] The power consumption of a single chip in the IGBT device is determined by formula (1):

[0023]

[0024] Wherein, P is the power consumption of a single chip in the IGBT device, V ce is the port voltage, I ce is the current signal.

[0025] According to any embodiment of the present application, the step of determining the collector and emitter thermal resistance according to the collector and emitter energy, collector and emitter temperatures, and the chip junction temperature of the elastic compression submodule under test includes:

[0026] The collector and emitter thermal resistances are determined by equations (2) and (3):

[0027]

[0028] Among them, R th,jc is the thermal resistance on the collector side, R th,je is the thermal resistance on the emitter side, T j * is the chip junction temperature of the tested elastic compression submodule, T c * is the collector side temperature of the tested elastic crimping submodule, T e * is the emitter side temperature of the elastic crimping submodule under test, and P c * is the energy transferred to the collector side of the tested elastic crimping submodule, P e* It is the energy transferred from the emitter side of the elastic crimping submodule under test.

[0029] According to any embodiment of the present application, the step of determining the chip junction temperature in the target elastic compression submodule according to the collector and emitter energies, collector and emitter temperatures, and collector and emitter thermal resistances of the target elastic compression submodule comprises:

[0030] The collector and emitter thermal resistances are determined by equations (4), (5) and (6):

[0031] T j =R th,je ·P e +T e (4)

[0032] T j =R th,jc ·P c +T c (5)

[0033] P=P c +P e (6)

[0034] Among them, T j is the chip junction temperature of the target elastic compression submodule, T c is the collector side temperature of the target elastic crimping submodule, T e is the emitter side temperature of the target elastic compression submodule, and P c is the energy transferred to the collector side of the target elastic crimping submodule, P e The energy transferred to the emitter side of the target elastic compression submodule.

[0035] According to a third aspect of the embodiments of the present application, the present application provides a thermal network-based press-fit IGBT junction temperature measurement device, which is applied to the junction temperature measurement unit, and the device includes:

[0036] A power consumption determination module, used to: determine the power consumption of a single chip in the IGBT device based on the port voltage and the current signal;

[0037] A thermal resistance determination module, used to: determine the energy of the collector and emitter of the elastic compression submodule under test according to the power consumption, and determine the collector and emitter thermal resistance according to the energy of the collector and emitter of the elastic compression submodule under test, the collector and emitter temperature and the chip junction temperature;

[0038] The junction temperature determination module is used to: determine the energy of the collector and emitter of the target elastic compression submodule according to the power consumption, and determine the chip junction temperature in the target elastic compression submodule according to the energy of the collector and emitter of the target elastic compression submodule, the collector and emitter temperature and the collector and emitter thermal resistance.

[0039] According to any embodiment of the present application, the power consumption determination module determines the power consumption of a single chip in the IGBT device based on the port voltage and the current signal, and is specifically used for:

[0040] The power consumption of a single chip in the IGBT device is determined by formula (1):

[0041]

[0042] Wherein, P is the power consumption of a single chip in the IGBT device, V ce is the port voltage, I ce is the current signal.

[0043] According to any embodiment of the present application, the thermal resistance determination module determines the collector and emitter thermal resistances according to the collector and emitter energies, collector and emitter temperatures, and the chip junction temperature of the tested elastic compression submodule, specifically for:

[0044] The collector and emitter thermal resistances are determined by equations (2) and (3):

[0045]

[0046]

[0047] Among them, R th,jc is the thermal resistance on the collector side, R th,je is the thermal resistance on the emitter side, T j * is the chip junction temperature of the tested elastic compression submodule, T c * is the collector side temperature of the tested elastic crimping submodule, T e * is the emitter side temperature of the elastic crimping submodule under test, and P c * is the energy transferred to the collector side of the tested elastic crimping submodule, P e * It is the energy transferred from the emitter side of the elastic crimping submodule under test.

[0048] According to any embodiment of the present application, the junction temperature determination module determines the chip junction temperature in the target elastic compression submodule according to the collector and emitter energy, collector and emitter temperature, and collector and emitter thermal resistance of the target elastic compression submodule, specifically for:

[0049] The chip junction temperature in the target elastic compression submodule is determined by formula (4), formula (5) and formula (6):

[0050] T j =R th,je ·P e +T e (4)

[0051] T j =R th,jc ·P c +T c (5)

[0052] P=P c +P e (6)

[0053] Among them, T j is the chip junction temperature of the target elastic compression submodule, T c is the collector side temperature of the target elastic crimping submodule, T e is the emitter side temperature of the target elastic compression submodule, and P c is the energy transferred to the collector side of the target elastic crimping submodule, P e The energy transferred to the emitter side of the target elastic compression submodule.

[0054] According to the fourth aspect of the embodiments of the present application, the present application provides an electronic device, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein when the processor executes the program, the steps of the thermal network-based crimped IGBT junction temperature measurement method are implemented.

[0055] According to a fifth aspect of the embodiments of the present application, the present application provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the steps of the method for measuring junction temperature of a crimped IGBT based on a thermal network.

[0056] According to a sixth aspect of the embodiments of the present application, the present application provides a computer program product, including a computer program / instruction, which, when executed by a processor, implements the steps of the thermal network-based crimped IGBT junction temperature measurement method.

[0057] It can be seen from the above technical scheme that the present application provides a thermal network-based crimped IGBT junction temperature measurement device, method and apparatus, which determines the power consumption of a single chip in the IGBT device based on the port voltage and the current signal, and determines the collector and emitter thermal resistance according to the power consumption, the energy of the collector and emitter of the measured elastic crimping sub-module, the collector and emitter temperature and the chip junction temperature, and determines the chip junction temperature in the target elastic crimping sub-module according to the power consumption, the energy of the collector and emitter of the target elastic crimping sub-module, the collector and emitter temperature and the collector and emitter thermal resistance, which can solve the problem that the chip junction temperature cannot be obtained online due to the tight crimping structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0058] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0059] Figure 1 This is a schematic diagram of an IGBT device elastic compression submodule in an embodiment of the present application;

[0060] Figure 2 Schematic diagram of an equivalent heat transfer network of an IGBT chip structure in an embodiment of the present application;

[0061] Figure 3 Schematic diagram of the internal thermal network of the press-fit IGBT device in the embodiment of the present application;

[0062] Figure 4 A schematic diagram of a thermal network extraction device for a press-fit IGBT device in an embodiment of the present application;

[0063] Figure 5 Schematic diagram of an online junction temperature measurement device for a press-fit IGBT device in an embodiment of the present application;

[0064] Figure 6 It is a flow chart of a method for measuring junction temperature of a press-fit IGBT based on a thermal network in an embodiment of the present application;

[0065] Figure 7 It is a structural diagram of a thermal network-based press-fit IGBT junction temperature measurement device in an embodiment of the present application;

[0066] Figure 8 It is a schematic diagram of the structure of an electronic device in an embodiment of the present application. DETAILED DESCRIPTION

[0067] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0068] The acquisition, storage, use, and processing of data in the technical solution of this application comply with the relevant provisions of national laws and regulations.

[0069] Taking into account the problem that due to the tightness of packaging and insufficient control of the thermal network, the existing temperature measurement technology is difficult to accurately measure the junction temperature distribution of each chip online, the present application provides a crimped IGBT junction temperature measurement device, method and apparatus based on a thermal network to solve the problem that the chip junction temperature cannot be obtained online due to the tight crimping structure.

[0070] like Figure 1 As shown, due to its repeated parallel structure inside the press-fit IGBT device, the elastic press-fit structure of a single chip can be approximately equivalent.

[0071] Among them, 1 is a press-fit IGBT structure collector molybdenum sheet, 2 is an IGBT chip, 3 is an emitter molybdenum sheet, 4 is a silver sheet, 5 is a copper column, 6 is a copper sheet, 7 is a disc spring sheet, 8 is a metal conductive strip, and 9 is an emitter metal electrode. When pressure is applied to both ends of the device, the above components are tightly pressed together to form good electrical and thermal conduction. Among them, 1 and 2 are metal sintering contacts, 2 and 3 are connected by pressure contact to form the contact thermal resistance and contact resistance of the chip, and 3 and 4 are two different metals that are connected by pressure. 4 and 5 involve the contact between the spring and the chip structure in the device, and there are multiple disc springs in 7 that are staggered and stacked to maintain good pressure equalization. 8 and 7 are in parallel on the electric heat path.

[0072] In order to better characterize the heat transfer path of the IGBT crimping structure, the present application equates the heat transfer body and the heat transfer contact surface in the above elastic crimping structure to a double-sided heat transfer network with the chip as the heat source, mainly characterizing the thermal resistance and heat capacity of different structures.

[0073] like Figure 2As shown, 10 is a chip heat source with bidirectional thermal potential, 11 is a thermal structure of the solder layer on the collector side of the chip, 12 is a body thermal structure of the collector molybdenum sheet, 13 is a contact thermal structure between the chip and the emitter molybdenum sheet, 14 is a body thermal structure of the emitter molybdenum sheet, 15 is a contact thermal structure between the emitter molybdenum sheet and the silver sheet, 16 is a body thermal structure of the silver sheet, 17 is a contact thermal structure between the silver sheet and the copper column, 18 is a body thermal structure of the copper column, 19 is a body thermal structure of the conductive strip, 20 is a series body thermal structure of each disc spring sheet, 21 is a contact thermal structure between each disc spring sheet, and 22 is a body thermal structure of the emitter metal electrode.

[0074] The actual press-fit IGBT device consists of multiple sub-modules connected in parallel. Multiple IGBT elastic press-fit sub-modules are encapsulated inside one sub-module. Figure 2 The thermal network on both sides of the collector and emitter is simplified and equivalently simplified to a thermal resistance and thermal capacitance structure, and the internal thermal network of the press-fit IGBT is obtained as follows: Figure 3 As shown. 23 is the thermal network of submodule m with multiple chips in parallel, 24 is the thermal network of submodule n with multiple chips in parallel, 25 is the thermal network of a certain elastic pressing structure inside submodule m, and 26 is a heat source of a certain chip inside submodule n. When the pressing type IGBT device is normally flowing, the conduction loss and switching loss of the chip cause the chip to generate a lot of heat, the junction temperature on the chip surface increases, and a thermal potential difference is generated relative to the device surface. Heat begins to transfer on both sides. When the device heats up stably, a junction temperature difference is formed between the chip junction temperature and the device surface.

[0075] In order to accurately measure the thermal network characteristics inside the press-fit IGBT module, it is necessary to measure and analyze its thermal network under actual conditions. Based on the thermal network model established in the early stage, we can have a preliminary understanding of how heat is transferred between the various layers of materials and structures inside the module, so as to better manage the heat dissipation of the chip.

[0076] In a press-fit IGBT module, multiple IGBT chips usually work in parallel, and the collector side of each chip is connected together through a sintering process, while sharing a gate control circuit. Since the electrical and thermal conduction paths of these chips on the collector side are interconnected, this tight connection makes it impossible to operate or separate the collector ends of each chip independently, which increases the difficulty of measuring the thermal characteristics of a single chip.

[0077] In order to solve the problem that the chip junction temperature cannot be obtained online due to the tight crimping structure, the present application provides an embodiment of a crimping IGBT junction temperature measurement device based on a thermal network, that is, the separation of the operating status of each IGBT chip is achieved by changing the structure on the emitter side. Specifically, an insulating layer or a specific thermal insulation material is introduced on the emitter side so that each chip is effectively isolated in the electrical heat conduction path. In this way, the thermal characteristics of each chip, such as key parameters such as thermal resistance and junction temperature, can be measured separately without affecting the normal operation of the entire module.

[0078] In an optional embodiment, the thermal network-based crimped IGBT junction temperature measurement device includes a chip temperature measurement thermocouple, an emitter temperature measurement thermocouple, a collector temperature measurement thermocouple, a plurality of insulating thermal insulation boards, a voltage probe, a PCB Rogowski coil, a plurality of Rogowski coil radio frequency terminals and a junction temperature measurement unit;

[0079] The chip temperature measuring thermocouple is used to collect the chip junction temperature of a tested elastic pressing submodule in the IGBT device, wherein the IGBT device is composed of a plurality of elastic pressing submodules connected in parallel;

[0080] The emitter temperature measuring thermocouple is used to collect the emitter side temperature in the elastic crimping submodule under test and the target elastic crimping submodule;

[0081] The collector temperature measuring thermocouple is used to collect the collector side temperature in the elastic crimping submodule under test and the target elastic crimping submodule;

[0082] The plurality of insulating and heat-insulating plates are arranged between the elastic crimping submodule to be tested and the adjacent submodule to form electrical and thermal isolation;

[0083] The voltage probe is used to collect the terminal voltages of the collector and the emitter in the elastic crimping submodule;

[0084] The PCB Rogowski coil is arranged on the current path of the IGBT device and is used to collect current signals of multiple chips in the IGBT device;

[0085] The multiple Rogowski coil radio frequency terminals are arranged at the output end of the PCB Rogowski coil, and are used to transmit the current signals of the multiple chips in the IGBT device to the junction temperature measurement unit.

[0086] For example, Figure 4As shown, the thermal network on both sides of the collector and emitter is extracted for the elastic pressing structure of the IGBT chip selected by the dotted box. In order to separate the selected structure in the sub-module with multiple chips in parallel, it is necessary to add an insulating heat-insulating plate without affecting the multi-physical field of the chip to be tested, so that other chip structures are electrically and thermally isolated from the chip structure to be tested. 27, 29-32 are all Teflon plates with the same thickness as the silver sheet on the emitter side, 28 is the silver sheet of the device to be tested, 33 is the temperature measuring thermocouple at the corresponding point on the emitter side, 34 is the chip temperature measuring thermocouple, and 35 is the temperature measuring thermocouple at the corresponding point on the collector side.

[0087] Figure 5 Schematic diagram of the junction temperature measurement of multiple chips inside a press-fit IGBT device, 36 is a press-fit IGBT device submodule, 37 is a PCB Rogowski coil, 38 is 8 IGBT chip Rogowski coil RF terminals, 39 and 40 are 4 anti-parallel diode Rogowski coil RF terminals.

[0088] The junction temperature measurement unit is used to determine the power consumption of a single chip in the IGBT device based on the port voltage and the current signal, and determine the collector and emitter thermal resistance according to the power consumption, the energy of the collector and emitter of the tested elastic pressing sub-module, the collector and emitter temperature, and the chip junction temperature, and determine the chip junction temperature in the target elastic pressing sub-module according to the power consumption, the energy of the collector and emitter of the target elastic pressing sub-module, the collector and emitter temperature, and the collector and emitter thermal resistance.

[0089] Among them, in order to solve the problem that the chip junction temperature cannot be obtained online due to the tight compression structure, the present application provides an embodiment of a compression-type IGBT junction temperature measurement method based on a thermal network, which is applied to a junction temperature measurement unit, such as Figure 6 As shown, including:

[0090] Step S101: determining the power consumption of a single chip in the IGBT device based on the port voltage and the current signal;

[0091] Step S102: determining the collector and emitter energy of the elastic compression submodule under test according to the power consumption, and determining the collector and emitter thermal resistance according to the collector and emitter energy, collector and emitter temperature and the chip junction temperature of the elastic compression submodule under test;

[0092] Step S103: determining collector and emitter energy of the target elastic compression submodule according to the power consumption, and determining the chip junction temperature in the target elastic compression submodule according to collector and emitter energy, collector and emitter temperature, and collector and emitter thermal resistance.

[0093] In an optional embodiment, determining the power consumption of a single chip in the IGBT device based on the port voltage and the current signal includes:

[0094] The power consumption of a single chip in the IGBT device is determined by formula (1):

[0095]

[0096] Wherein, P is the power consumption of a single chip in the IGBT device, V ce is the port voltage, I ce is the current signal.

[0097] Specifically, when the device is in operation, a voltage probe is used to monitor the collector-emitter port voltage of the device online, a PCB Rogowski coil is used to monitor the current Ic flowing through multiple chips, and the power consumption P of a single chip in each cycle is calculated to obtain the steady-state heat generation of each chip.

[0098]

[0099] In an optional embodiment, determining the collector and emitter thermal resistance according to the collector and emitter energy, collector and emitter temperature and the chip junction temperature of the tested elastic compression submodule includes:

[0100] The collector and emitter thermal resistances are determined by equations (2) and (3):

[0101]

[0102] Among them, R th,jc is the thermal resistance on the collector side, R th,je is the thermal resistance on the emitter side, T j * is the chip junction temperature of the tested elastic compression submodule, T c * is the collector side temperature of the tested elastic crimping submodule, T e * is the emitter side temperature of the elastic crimping submodule under test, and P c * is the energy transferred to the collector side of the tested elastic crimping submodule, P e * It is the energy transferred from the emitter side of the elastic crimping submodule under test.

[0103] In the process of determining the energy of the collector and emitter of the elastic crimping submodule under test according to the power consumption, the following formula (1) and the empirical formula when the collector side temperature is equal to the emitter side temperature can be used: P=Pc *+P e * Get the energy P of the collector and emitter of the tested elastic crimping submodule c * and P e * .

[0104] The thermal resistance extraction method proposed above can be used to calculate the heat dissipation thermal resistance of all chips inside the press-fit IGBT device submodule. Under steady-state operating conditions, the heat diffusion time inside the device is significantly longer than the relaxation time of each component in the thermal network, that is, the time required for heat transfer between different components to reach equilibrium is shorter. Therefore, the entire heat transfer process tends to be stable, and the heat distribution gradually reaches a stable thermal equilibrium on the transfer path within the chip and module. In this case, the complex thermal network can be simplified into an equivalent thermal resistance network model to describe the overall characteristics of the heat conduction path.

[0105] In an optional embodiment, determining the chip junction temperature in the target elastic compression submodule according to the collector and emitter energy, collector and emitter temperatures, and collector and emitter thermal resistances of the target elastic compression submodule includes:

[0106] The collector and emitter thermal resistances are determined by equations (4), (5) and (6):

[0107] T j =R th,je ·P e +T e (4)

[0108] T j =R th,jc ·P c +T c (5)

[0109] P=P c +P e (6)

[0110] Among them, T j is the chip junction temperature of the target elastic compression submodule, T c is the collector side temperature of the target elastic crimping submodule, T e is the emitter side temperature of the target elastic compression submodule, and P c is the energy transferred to the collector side of the target elastic crimping submodule, P e The energy transferred to the emitter side of the target elastic compression submodule.

[0111] In this application, the multiple physical fields (such as thermal fields and electric fields) inside the press-fit IGBT device can be approximately regarded as uniformly distributed during analysis. This means that under the steady-state operation of the device, the environmental conditions of each chip are relatively uniform, and the overall heat conduction effect will not be significantly affected by local differences. Under this steady-state condition, the coupling effect between different physical fields can be ignored, that is, it is assumed that each physical field operates independently without interfering with each other. By calculating the power consumption P of each chip, the heat generated by the chip can be estimated, and the junction temperature can be derived. When the temperature of the corresponding points of the collector and emitter chips is monitored in real time during the operation of the device, these measured temperature values ​​are substituted into the formula to calculate the junction temperature level of each chip.

[0112] From the above description, it can be seen that the present application solves the thermal management problem of the multi-chip parallel structure in the press-fit IGBT module through an innovative method. First, the present application describes in detail the thermal network inside the press-fit IGBT module, simulates the heat diffusion path between the chips, and helps to deeply understand the thermal conduction process of the chip. Secondly, the experimental method proposed in the present application can extract the thermal network of multiple chips inside the compactly packaged press-fit IGBT module without destroying the multi-physical field environment inside the chip to be tested, solving the technical problem that the thermal network is difficult to measure due to the tight structure. Finally, the present application establishes an online measurement method based on the thermal network model, which overcomes the limitation that the traditional method is difficult to monitor the chip junction temperature online by obtaining the steady-state junction temperature of the parallel chips in real time during the operation of the module, effectively improving the reliability and thermal management capabilities of the module, and providing strong support for the application of high-performance press-fit IGBTs.

[0113] In order to solve the problem that the chip junction temperature cannot be obtained online due to the tight crimping structure, the present application provides an embodiment of a crimping IGBT junction temperature measurement device based on a thermal network for realizing all or part of the contents of the crimping IGBT junction temperature measurement method based on a thermal network, see Figure 7 , the thermal network-based press-fit IGBT junction temperature measurement device is applied to the junction temperature measurement unit, and the device comprises:

[0114] The power consumption determination module 1101 is used to: determine the power consumption of a single chip in the IGBT device based on the port voltage and the current signal;

[0115] The thermal resistance determination module 1102 is used to: determine the energy of the collector and emitter of the elastic compression submodule under test according to the power consumption, and determine the collector and emitter thermal resistance according to the energy of the collector and emitter of the elastic compression submodule under test, the collector and emitter temperature and the chip junction temperature;

[0116] The junction temperature determination module 1103 is used to: determine the energy of the collector and emitter of the target elastic pressing submodule according to the power consumption, and determine the chip junction temperature in the target elastic pressing submodule according to the energy of the collector and emitter of the target elastic pressing submodule, the collector and emitter temperature and the collector and emitter thermal resistance.

[0117] According to any embodiment of the present application, the power consumption determination module determines the power consumption of a single chip in the IGBT device based on the port voltage and the current signal, and is specifically used for:

[0118] The power consumption of a single chip in the IGBT device is determined by formula (1):

[0119]

[0120] Wherein, P is the power consumption of a single chip in the IGBT device, V ce is the port voltage, I ce is the current signal.

[0121] According to any embodiment of the present application, the thermal resistance determination module determines the collector and emitter thermal resistances according to the collector and emitter energies, collector and emitter temperatures, and the chip junction temperature of the tested elastic compression submodule, specifically for:

[0122] The collector and emitter thermal resistances are determined by equations (2) and (3):

[0123]

[0124] Among them, R th,jc is the thermal resistance on the collector side, R th,je is the thermal resistance on the emitter side, T j * is the chip junction temperature of the tested elastic compression submodule, T c * is the collector side temperature of the tested elastic crimping submodule, T e * is the emitter side temperature of the elastic crimping submodule under test, and P c * is the energy transferred to the collector side of the tested elastic crimping submodule, P e * It is the energy transferred from the emitter side of the elastic crimping submodule under test.

[0125] According to any embodiment of the present application, the junction temperature determination module determines the chip junction temperature in the target elastic compression submodule according to the collector and emitter energy, collector and emitter temperature, and collector and emitter thermal resistance of the target elastic compression submodule, specifically for:

[0126] The chip junction temperature in the target elastic compression submodule is determined by formula (4), formula (5) and formula (6):

[0127] T j =R th,je ·P e +T e (4)

[0128] T j =R th,jc ·P c +T c (5)

[0129] P=P c +P e (6)

[0130] Among them, T j is the chip junction temperature of the target elastic compression submodule, T c is the collector side temperature of the target elastic crimping submodule, T e is the emitter side temperature of the target elastic compression submodule, and P c is the energy transferred to the collector side of the target elastic crimping submodule, P e The energy transferred to the emitter side of the target elastic compression submodule.

[0131] According to the fourth aspect of the embodiments of the present application, the present application provides an electronic device, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein when the processor executes the program, the steps of the thermal network-based crimped IGBT junction temperature measurement method are implemented.

[0132] According to a fifth aspect of the embodiments of the present application, the present application provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the steps of the method for measuring junction temperature of a crimped IGBT based on a thermal network.

[0133] According to a sixth aspect of the embodiments of the present application, the present application provides a computer program product, including a computer program / instruction, which, when executed by a processor, implements the steps of the thermal network-based crimped IGBT junction temperature measurement method.

[0134] From the hardware level, in order to solve the problem that the chip junction temperature cannot be obtained online due to the tight crimping structure, the present application provides an embodiment of an electronic device for implementing all or part of the contents of the crimping IGBT junction temperature measurement method based on a thermal network, and the electronic device specifically includes the following contents:

[0135] Processor, memory, communication interface and bus; wherein the processor, memory and communication interface communicate with each other through the bus; the communication interface is used to realize information transmission between the crimping IGBT junction temperature measurement device based on thermal network and related equipment such as core business system, user terminal and related database; the logic controller can be a desktop computer, tablet computer and mobile terminal, etc., but the present embodiment is not limited thereto. In the present embodiment, the logic controller can be implemented with reference to the embodiment of the crimping IGBT junction temperature measurement method based on thermal network and the embodiment of the crimping IGBT junction temperature measurement device based on thermal network in the embodiment, and the contents thereof are incorporated herein, and the repeated parts are not repeated.

[0136] It is understandable that the user terminal may include a smart phone, a tablet electronic device, a network set-top box, a portable computer, a desktop computer, a personal digital assistant (PDA), a vehicle-mounted device, a smart wearable device, etc. Among them, the smart wearable device may include smart glasses, a smart watch, a smart bracelet, etc.

[0137] In practical applications, part of the heat network-based crimped IGBT junction temperature measurement method can be performed on the electronic device side as described above, or all operations can be completed in the client device. The specific selection can be based on the processing capability of the client device and the limitations of the user's usage scenario. This application does not limit this. If all operations are completed in the client device, the client device may also include a processor.

[0138] The client device may have a communication module (i.e., a communication unit) that can communicate with a remote server to achieve data transmission with the server. The server may include a server on the task scheduling center side, and other implementation scenarios may also include a server on an intermediate platform, such as a server on a third-party server platform that has a communication link with the task scheduling center server. The server may include a single computer device, or a server cluster consisting of multiple servers, or a server structure of a distributed device.

[0139] Figure 8 FIG. 9 is a schematic block diagram of the system structure of the electronic device 9600 according to an embodiment of the present application. Figure 8 As shown, the electronic device 9600 may include a central processor 9100 and a memory 9140; the memory 9140 is coupled to the central processor 9100. It is worth noting that Figure 8 is exemplary; other types of structures may also be used to supplement or replace this structure to implement telecommunication functions or other functions.

[0140] In one embodiment, the function of the heat network-based press-fit IGBT junction temperature measurement method can be integrated into the central processor 9100. The central processor 9100 can be configured to perform the following control:

[0141] Step S101: determining the power consumption of a single chip in the IGBT device based on the port voltage and the current signal;

[0142] Step S102: determining the collector and emitter energy of the elastic compression submodule under test according to the power consumption, and determining the collector and emitter thermal resistance according to the collector and emitter energy, collector and emitter temperature and the chip junction temperature of the elastic compression submodule under test;

[0143] Step S103: determining collector and emitter energy of the target elastic compression submodule according to the power consumption, and determining the chip junction temperature in the target elastic compression submodule according to collector and emitter energy, collector and emitter temperature, and collector and emitter thermal resistance.

[0144] It can be seen from the above description that the electronic device provided in the embodiment of the present application solves the problem that the chip junction temperature cannot be obtained online due to the tight crimping structure.

[0145] In another embodiment, the press-fit IGBT junction temperature measurement device based on the thermal network can be configured separately from the central processing unit 9100. For example, the press-fit IGBT junction temperature measurement device based on the thermal network can be configured as a chip connected to the central processing unit 9100, and the function of the press-fit IGBT junction temperature measurement method based on the thermal network can be realized through the control of the central processing unit.

[0146] like Figure 8 As shown, the electronic device 9600 may also include: a communication module 9110, an input unit 9120, an audio processor 9130, a display 9160, and a power supply 9170. It is worth noting that the electronic device 9600 does not necessarily have to include Figure 8 In addition, the electronic device 9600 may also include Figure 8 For components not shown, reference may be made to the prior art.

[0147] like Figure 8As shown, the central processing unit 9100 is sometimes also referred to as a controller or an operation control, and may include a microprocessor or other processor device and / or logic device. The central processing unit 9100 receives input and controls the operation of various components of the electronic device 9600.

[0148] The memory 9140 may be, for example, one or more of a cache, a flash memory, a hard drive, a removable medium, a volatile memory, a non-volatile memory or other suitable devices. The above-mentioned information related to the failure may be stored, and a program for executing the relevant information may also be stored. The CPU 9100 may execute the program stored in the memory 9140 to implement information storage or processing, etc.

[0149] The input unit 9120 provides input to the central processing unit 9100. The input unit 9120 is, for example, a key or a touch input device. The power supply 9170 is used to provide power to the electronic device 9600. The display 9160 is used to display display objects such as images and texts. The display may be, for example, an LCD display, but is not limited thereto.

[0150] The memory 9140 may be a solid-state memory, such as a read-only memory (ROM), a random access memory (RAM), a SIM card, etc. It may also be a memory that saves information even when the power is off, can be selectively erased, and is provided with more data, examples of which are sometimes referred to as EPROMs, etc. The memory 9140 may also be some other type of device. The memory 9140 includes a buffer memory 9141 (sometimes referred to as a buffer). The memory 9140 may include an application / function storage unit 9142, which is used to store application programs and function programs or processes for executing the operation of the electronic device 9600 through the central processor 9100.

[0151] The memory 9140 may also include a data storage unit 9143 for storing data, such as contacts, digital data, pictures, sounds, and / or any other data used by the electronic device. The driver storage unit 9144 of the memory 9140 may include various drivers for communication functions of the electronic device and / or for executing other functions of the electronic device (such as messaging applications, address book applications, etc.).

[0152] The communication module 9110 is a transmitter / receiver 9110 that sends and receives signals via an antenna 9111. The communication module (transmitter / receiver) 9110 is coupled to the central processor 9100 to provide input signals and receive output signals, which may be the same as the case of a conventional mobile communication terminal.

[0153] Based on different communication technologies, multiple communication modules 9110 may be provided in the same electronic device, such as a cellular network module, a Bluetooth module and / or a wireless LAN module, etc. The communication module (transmitter / receiver) 9110 is also coupled to a speaker 9131 and a microphone 9132 via an audio processor 9130 to provide an audio output via the speaker 9131 and receive an audio input from the microphone 9132, thereby realizing a common telecommunication function. The audio processor 9130 may include any suitable buffer, decoder, amplifier, etc. In addition, the audio processor 9130 is also coupled to the central processor 9100, so that recording can be performed on the local machine through the microphone 9132, and the sound stored on the local machine can be played through the speaker 9131.

[0154] The embodiments of the present application also provide a computer-readable storage medium capable of implementing all the steps in the method for measuring the junction temperature of a press-fit IGBT based on a thermal network, where the execution subject is a server or a client in the above embodiments. The computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, all the steps in the method for measuring the junction temperature of a press-fit IGBT based on a thermal network, where the execution subject is a server or a client in the above embodiments are implemented. For example, when the processor executes the computer program, the following steps are implemented:

[0155] Step S101: determining the power consumption of a single chip in the IGBT device based on the port voltage and the current signal;

[0156] Step S102: determining the collector and emitter energy of the elastic compression submodule under test according to the power consumption, and determining the collector and emitter thermal resistance according to the collector and emitter energy, collector and emitter temperature and the chip junction temperature of the elastic compression submodule under test;

[0157] Step S103: determining collector and emitter energy of the target elastic compression submodule according to the power consumption, and determining the chip junction temperature in the target elastic compression submodule according to collector and emitter energy, collector and emitter temperature, and collector and emitter thermal resistance.

[0158] It can be seen from the above description that the computer-readable storage medium provided in the embodiment of the present application solves the problem that the chip junction temperature cannot be obtained online due to the tight crimping structure.

[0159] The embodiments of the present application also provide a computer program product capable of implementing all the steps in the method for measuring the junction temperature of a press-fit IGBT based on a thermal network, where the execution subject is a server or a client in the above embodiments. When the computer program / instruction is executed by a processor, the steps of the method for measuring the junction temperature of a press-fit IGBT based on a thermal network are implemented. For example, the computer program / instruction implements the following steps:

[0160] Step S101: determining the power consumption of a single chip in the IGBT device based on the port voltage and the current signal;

[0161] Step S102: determining the collector and emitter energy of the elastic compression submodule under test according to the power consumption, and determining the collector and emitter thermal resistance according to the collector and emitter energy, collector and emitter temperature and the chip junction temperature of the elastic compression submodule under test;

[0162] Step S103: determining collector and emitter energy of the target elastic compression submodule according to the power consumption, and determining the chip junction temperature in the target elastic compression submodule according to collector and emitter energy, collector and emitter temperature, and collector and emitter thermal resistance.

[0163] It can be seen from the above description that the computer program product provided in the embodiment of the present application solves the problem that the chip junction temperature cannot be obtained online due to the tight crimping structure.

[0164] It will be appreciated by those skilled in the art that embodiments of the present invention may be provided as methods, devices, or computer program products. Therefore, the present invention may take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Moreover, the present invention may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0165] The present invention is described with reference to flowcharts and / or block diagrams of methods, devices (apparatus), and computer program products according to embodiments of the present invention. It should be understood that each process and / or block in the flowchart and / or block diagram, as well as the combination of processes and / or blocks in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0166] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0167] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.

[0168] The present invention uses specific embodiments to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. At the same time, for those skilled in the art, according to the idea of ​​the present invention, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present invention.

Claims

1. A thermal network-based crimped IGBT junction temperature measurement device, characterized in that: It includes a chip temperature measuring thermocouple, an emitter temperature measuring thermocouple, a collector temperature measuring thermocouple, multiple insulating thermal insulation boards, a voltage probe, a PCB Rogowski coil, multiple Rogowski coil radio frequency terminals and a junction temperature measurement unit; The chip temperature measuring thermocouple is used to collect the chip junction temperature of a tested elastic pressing submodule in the IGBT device, wherein the IGBT device is composed of a plurality of elastic pressing submodules connected in parallel; The emitter temperature measuring thermocouple is used to collect the emitter side temperature in the elastic crimping submodule under test and the target elastic crimping submodule; The collector temperature measuring thermocouple is used to collect the collector side temperature in the elastic crimping submodule under test and the target elastic crimping submodule; The plurality of insulating and heat-insulating plates are arranged between the elastic crimping submodule to be tested and the adjacent submodule to form electrical and thermal isolation; The voltage probe is used to collect the terminal voltages of the collector and the emitter in the elastic crimping submodule; The PCB Rogowski coil is arranged on the current path of the IGBT device and is used to collect current signals of multiple chips in the IGBT device; The multiple Rogowski coil radio frequency terminals are arranged at the output end of the PCB Rogowski coil, and are used to transmit the current signals of the multiple chips in the IGBT device to the junction temperature measurement unit; The junction temperature measurement unit is used to determine the power consumption of a single chip in the IGBT device based on the port voltage and the current signal, and determine the collector and emitter thermal resistance according to the power consumption, the energy of the collector and emitter of the tested elastic pressing sub-module, the collector and emitter temperature, and the chip junction temperature, and determine the chip junction temperature in the target elastic pressing sub-module according to the power consumption, the energy of the collector and emitter of the target elastic pressing sub-module, the collector and emitter temperature, and the collector and emitter thermal resistance.

2. A method for measuring junction temperature of a press-fit IGBT based on a thermal network, characterized in that: Applied to the junction temperature measurement unit of claim 1, the method comprising: Determine the power consumption of a single chip in the IGBT device based on the port voltage and the current signal; Determine the energy of the collector and emitter of the elastic compression submodule under test according to the power consumption, and determine the collector and emitter thermal resistance according to the energy of the collector and emitter of the elastic compression submodule under test, the collector and emitter temperature and the chip junction temperature; The energy of the collector and emitter of the target elastic compression submodule is determined according to the power consumption, and the chip junction temperature in the target elastic compression submodule is determined according to the energy of the collector and emitter of the target elastic compression submodule, the collector and emitter temperature and the collector and emitter thermal resistance.

3. The method for measuring junction temperature of a press-fit IGBT based on a thermal network according to claim 2, characterized in that: The determining the power consumption of a single chip in the IGBT device based on the port voltage and the current signal comprises: The power consumption of a single chip in the IGBT device is determined by formula (1): Wherein, P is the power consumption of a single chip in the IGBT device, V ce is the port voltage, I ce is the current signal.

4. The method for measuring junction temperature of a press-fit IGBT based on a thermal network according to claim 2, characterized in that: The method of determining the collector and emitter thermal resistance according to the collector and emitter energy, collector and emitter temperature and the chip junction temperature of the tested elastic compression submodule comprises: The collector and emitter thermal resistances are determined by equations (2) and (3): Among them, R th,jc is the thermal resistance on the collector side, R th,je is the thermal resistance on the emitter side, T j * is the chip junction temperature of the tested elastic compression submodule, T c * is the collector side temperature of the tested elastic crimping submodule, T e * is the emitter side temperature of the elastic crimping submodule under test, and P c * is the energy transferred to the collector side of the tested elastic crimping submodule, P e * It is the energy transferred from the emitter side of the elastic crimping submodule under test.

5. The method for measuring junction temperature of a press-fit IGBT based on a thermal network according to claim 2, characterized in that: The step of determining the chip junction temperature in the target elastic compression submodule according to the collector and emitter energy, collector and emitter temperatures, and collector and emitter thermal resistances of the target elastic compression submodule comprises: The collector and emitter thermal resistances are determined by equations (4), (5) and (6): T j =R th,je ·P e +T e (4) T j =R th,jc ·P c +T c (5) P=P c +P e (6) Among them, T j is the chip junction temperature of the target elastic compression submodule, T c is the collector side temperature of the target elastic crimping submodule, T e is the emitter side temperature of the target elastic compression submodule, and P c is the energy transferred to the collector side of the target elastic crimping submodule, P e The energy transferred to the emitter side of the target elastic compression submodule.

6. A thermal network-based crimped IGBT junction temperature measurement device, characterized in that: The junction temperature measurement unit according to claim 1, wherein the device comprises: A power consumption determination module, used to: determine the power consumption of a single chip in the IGBT device based on the port voltage and the current signal; A thermal resistance determination module, used to: determine the energy of the collector and emitter of the elastic compression submodule under test according to the power consumption, and determine the collector and emitter thermal resistance according to the energy of the collector and emitter of the elastic compression submodule under test, the collector and emitter temperature and the chip junction temperature; The junction temperature determination module is used to: determine the energy of the collector and emitter of the target elastic compression submodule according to the power consumption, and determine the chip junction temperature in the target elastic compression submodule according to the energy of the collector and emitter of the target elastic compression submodule, the collector and emitter temperature and the collector and emitter thermal resistance.

7. The thermal network-based press-fit IGBT junction temperature measurement device according to claim 6, characterized in that: The power consumption determination module determines the power consumption of a single chip in the IGBT device based on the port voltage and the current signal, and is specifically used to: The power consumption of a single chip in the IGBT device is determined by formula (1): Wherein, P is the power consumption of a single chip in the IGBT device, V ce is the port voltage, I ce is the current signal.

8. The thermal network-based press-fit IGBT junction temperature measurement device according to claim 6, characterized in that: The thermal resistance determination module determines the collector and emitter thermal resistance according to the collector and emitter energy, collector and emitter temperature of the tested elastic compression submodule and the chip junction temperature, and is specifically used for: The collector and emitter thermal resistances are determined by equations (2) and (3): Among them, R th,jc is the thermal resistance on the collector side, R th,je is the thermal resistance on the emitter side, T j * is the chip junction temperature of the tested elastic compression submodule, T c * is the collector side temperature of the tested elastic crimping submodule, T e * is the emitter side temperature of the elastic crimping submodule under test, and P c * is the energy transferred to the collector side of the tested elastic crimping submodule, P e * It is the energy transferred from the emitter side of the elastic crimping submodule under test.

9. The thermal network-based press-fit IGBT junction temperature measurement device according to claim 6, characterized in that: The junction temperature determination module determines the chip junction temperature in the target elastic compression submodule according to the collector and emitter energy, collector and emitter temperature and the collector and emitter thermal resistance of the target elastic compression submodule, and is specifically used to: The chip junction temperature in the target elastic compression submodule is determined by formula (4), formula (5) and formula (6): T j =R th,je ·P e +T e (4) T j =R th,jc ·P c +T c (5) P=P c +P e (6) Among them, T j is the chip junction temperature of the target elastic compression submodule, T c is the collector side temperature of the target elastic crimping submodule, T e is the emitter side temperature of the target elastic compression submodule, and P c is the energy transferred to the collector side of the target elastic crimping submodule, P e The energy transferred to the emitter side of the target elastic compression submodule.

10. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that: When the processor executes the program, the steps of the method for measuring junction temperature of a press-fit IGBT based on a thermal network as described in any one of claims 2 to 5 are implemented.

11. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the method for measuring junction temperature of a press-fit IGBT based on a thermal network as described in any one of claims 2 to 5 are implemented.

12. A computer program product comprising a computer program / instructions, characterized in that When the computer program / instruction is executed by a processor, the steps of the method for measuring junction temperature of a press-fit IGBT based on a thermal network as described in any one of claims 2 to 5 are implemented.

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