Multilayer electronic component

Abstract

The present disclosure provides a multilayer electronic component. The multilayer electronic component according to an example embodiment of the present disclosure may include: a main body including a capacitance forming portion including a dielectric layer and internal electrodes alternately disposed with the dielectric layer in a first direction, and cover portions disposed on both surfaces of the capacitance forming portion in the first direction; and an external electrode disposed on the main body. The covering portion may include barium (Ba), gallium (Ga), and tin (Sn), and a ratio (A / B) of a number of moles (A) of barium (Ba) based on 100 moles of gallium (Ga) included in the covering portion to a number of moles (B) of barium (Ba) based on 100 moles of tin (Sn) included in the covering portion may satisfy 0.2 < = A / B < = 4.0.

Description

[0001] This application claims the benefit of priority from Korean Patent Application No. 10-2023-0158979 filed in the Korean Intellectual Property Office on November 16, 2023, the disclosure of which is incorporated herein in its entirety by reference. Technical Field

[0002] The present disclosure relates to a multi-layer electronic assembly. Background Art

[0003] Multilayer ceramic capacitors (MLCC, a type of multilayer electronic component) are chip capacitors that are mounted on printed circuit boards of various types of electronic products such as image display devices (including liquid crystal displays (LCDs) and plasma display panels (PDPs)), computers, smartphones, and mobile phones, and are used to charge or discharge them.

[0004] Multilayer ceramic capacitors are used as components in various electronic devices because they have a small size, ensure high capacitance, and are easy to mount. With the miniaturization and high output power of various electronic devices such as computers and mobile devices, the demand for miniaturization and high capacitance of multilayer ceramic capacitors is also increasing.

[0005] With the miniaturization and high capacitance of multilayer ceramic capacitors, in order to achieve improved electrical characteristics, research has been conducted to reduce the size of dielectric grains as a microstructure to alleviate the electric field concentration phenomenon. As the size of dielectric grains is reduced, the electric field concentration phenomenon is improved, but since pores are excessively generated within the microstructure, a problem of deterioration of moisture-proof reliability occurs, so research has been conducted to improve both electrical characteristics and moisture-proof reliability. Summary of the invention

[0006] An aspect of the present disclosure is to provide a multilayer electronic component having improved moisture resistance reliability.

[0007] An aspect of the present disclosure is to provide a multilayer electronic component having improved electrical characteristics.

[0008] An aspect of the present disclosure is to provide a multilayer electronic component having improved reliability.

[0009] However, aspects of the present disclosure are not limited to the above and may be more easily understood in the course of describing specific example embodiments of the present disclosure.

[0010] A multilayer electronic component according to an example embodiment of the present disclosure may include: a body including a capacitance forming portion and a covering portion, the capacitance forming portion including a dielectric layer and an inner electrode alternately arranged with the dielectric layer in a first direction, the covering portion being arranged on both surfaces of the capacitance forming portion in the first direction; and an outer electrode arranged on the body. The covering portion may include barium (Ba), gallium (Ga), and tin (Sn), and a ratio (A / B) of a mole number (A) of gallium (Ga) included in the covering portion based on 100 moles of barium (Ba) to a mole number (B) of tin (Sn) included in the covering portion based on 100 moles of barium (Ba) may satisfy 0.2≤A / B≤4.0.

[0011] A multilayer electronic component according to another exemplary embodiment of the present disclosure may include: a body including a capacitance forming portion and a covering portion, the capacitance forming portion including a dielectric layer and inner electrodes alternately arranged with the dielectric layer in a first direction, the covering portion being arranged on both surfaces of the capacitance forming portion in the first direction; and an outer electrode arranged on the body. The covering portion may include titanium (Ti), gallium (Ga), and tin (Sn), and the number of moles (A) of gallium (Ga) included in the covering portion based on 100 moles of titanium (Ti) is greater than or equal to 0.3 moles and less than or equal to 6.0 moles.

[0012] One of the various effects of the present disclosure is to improve the moisture-proof reliability of a multilayer electronic component.

[0013] One of the various effects of the present disclosure is to improve the electrical characteristics of a multilayer electronic component.

[0014] One of the various effects of the present disclosure is to improve the reliability of a multilayer electronic component.

[0015] However, the advantages and effects of the present application are not limited to the foregoing and may be more easily understood in the course of describing a specific exemplary embodiment of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The above and other aspects, features and advantages of the present disclosure will be more clearly understood through the following detailed description in conjunction with the accompanying drawings, in which: Figure 1 is a perspective view schematically illustrating a multilayer electronic component according to an example embodiment of the present disclosure; Figure 2 An exploded perspective view schematically showing a stacking structure of the main body; Figure 3 is along Figure 1 A schematic cross-sectional view taken along line II' of ; Figure 4 is along Figure 1A schematic cross-sectional view taken along line II-II'; Figure 5A is an image obtained by mapping tin (Sn) element on a cross section of a cover portion in an inventive example in an energy dispersive X-ray spectrometer (EDS) analysis mode of a transmission electron microscope (TEM); Figure 5B is an image obtained by mapping gallium (Ga) element on a cross section of a cover portion in an inventive example in an energy dispersive spectrometer (EDS) analysis mode of a transmission electron microscope (TEM); Fig. 6A is an image obtained by observing crystal grains by a procedure after capturing an image of a cross section of a cover portion in a comparative example with a scanning electron microscope (SEM); Figure 6B is an image obtained by observing the crystal grains by a procedure after capturing an image of a cross section of the cover portion in the inventive example with a scanning electron microscope (SEM); Figure 6C It is shown in Fig. 6A and Figure 6B Bar graph of the average size of the grains observed in ; Fig. 7A is an image obtained by observing the pores (P) after capturing an image of a cross section of the cover portion in the comparative example with a scanning electron microscope (SEM); Figure 7B is an image obtained by observing the pores (P) after capturing an image of a cross section of the cover portion in the inventive example with a scanning electron microscope (SEM); Fig. 8A is a graph of MTTF of a comparative example; Figure 8B is a graph of MTTF of an example of the invention; Fig.9A is a moisture-proof reliability evaluation curve diagram of a comparative example; and Fig. 9B It is a moisture-proof reliability evaluation curve diagram of the invention example. DETAILED DESCRIPTION

[0017] Hereinafter, example embodiments of the present disclosure will be described with reference to the accompanying drawings. However, example embodiments of the present disclosure may be illustrated in many different forms and should not be construed as being limited to the specific example embodiments set forth herein. The example embodiments disclosed herein are provided to better explain the present disclosure to those skilled in the art. Therefore, in the accompanying drawings, for the sake of clarity, the shapes and sizes of the elements may be exaggerated, and the same reference numerals will always be used to represent the same elements.

[0018] In addition, in order to clearly describe the present disclosure in the drawings, contents irrelevant to the description are omitted, and although the size (e.g., thickness) of each component shown in the drawings is arbitrarily shown for the convenience of description, the present disclosure is not limited thereto. In addition, components having the same functions within the scope of the same concept are described using the same reference numerals. Throughout the specification, unless otherwise specified, when a specific part "includes" or "contains" a specific component, this indicates that other components are not excluded and other components may be further included.

[0019] In the drawings, a first direction may be defined as a thickness direction, a second direction may be defined as a length direction, and a third direction may be defined as a width direction.

[0020] Multilayer electronic components Figure 1 is a perspective view schematically illustrating a multilayer electronic component according to an example embodiment of the present disclosure.

[0021] Figure 2 The exploded perspective view schematically shows the stacking structure of the main body.

[0022] Figure 3 is along Figure 1 Schematic cross-sectional view taken along line II'.

[0023] Figure 4 is along Figure 1 Schematic cross-sectional view taken along line II-II'.

[0024] In the following, reference will be made to Figures 1 to 4 The multilayer electronic component according to the exemplary embodiment of the present disclosure is described in more detail. However, a multilayer ceramic capacitor will be described as an example of the multilayer electronic component, but the multilayer electronic component of the present disclosure can also be applied to various electronic products using a dielectric composition, such as an inductor, a piezoelectric element, a varistor, or a thermistor.

[0025] The multilayer electronic component 100 according to an example embodiment of the present disclosure may include: a body 110 including a capacitance forming part Ac and cover parts 112 and 113, the capacitance forming part Ac including a dielectric layer 111 and internal electrodes 121 and 122 alternately disposed with the dielectric layer 111 in a first direction, the cover parts 112 and 113 disposed on both surfaces of the capacitance forming part Ac in the first direction; and external electrodes 131 and 132 disposed on the body 110. The cover parts 112 and 113 may include barium (Ba), gallium (Ga), and tin (Sn), and a ratio (A / B) of the number of moles (A) of gallium (Ga) included in the cover parts 112 and 113 based on 100 moles of barium (Ba) to the number of moles (B) of tin (Sn) included in the cover parts 112 and 113 based on 100 moles of barium (Ba) may satisfy 0.2≤A / B≤4.0.

[0026] The body 110 may include dielectric layers 111 and internal electrodes 121 and 122 that are alternately stacked.

[0027] More specifically, the body 110 may include a capacitance forming part Ac disposed inside the body and forming capacitance by including first and second internal electrodes 121 and 122 alternately arranged to face each other with the dielectric layer 111 interposed therebetween.

[0028] There is no particular limitation on the specific shape of the body 110, but Figure 1 and Figure 2 As shown in FIG, the body 110 may have a hexahedral shape or a shape similar to the hexahedral shape. Due to shrinkage of ceramic powder particles included in the body 110 during a sintering process, the body 110 may not have a hexahedral shape with completely straight lines but may generally have a hexahedral shape.

[0029] The body 110 may have a first surface 1 and a second surface 2 opposite to each other in a first direction, a third surface 3 and a fourth surface 4 connected to the first surface 1 and the second surface 2 and opposite to each other in the second direction, and a fifth surface 5 and a sixth surface 6 connected to the first surface 1, the second surface 2, the third surface 3 and the fourth surface 4 and opposite to each other in a third direction.

[0030] In a state where the plurality of dielectric layers 111 included in the body 110 are sintered, adjacent dielectric layers 111 may be integrated such that a boundary therebetween is difficult to identify without using a scanning electron microscope (SEM).

[0031] There is no limitation on the material included in the dielectric layer 111, as long as sufficient electrostatic capacitance can be obtained using it. Generally, perovskite (ABO3)-based materials can be used, and for example, barium titanate-based materials, lead composite perovskite-based materials, or strontium titanate-based materials can be used. The barium titanate-based materials may include BaTiO3-based ceramic particles, and examples of the BaTiO3-based ceramic particles may include BaTiO3 and (Ba 1-x Ca x )TiO3 (0 < x < 1), Ba(Ti 1-y Ca y )O3 (0 < y < 1), (Ba 1-x Ca x )(Ti 1-y Zr y )O3 (0 < x < 1, 0 < y < 1) or Ba(Ti 1-y Zr y )O3 (0 < y < 1).

[0032] In addition, as the material included in the dielectric layer 111, various ceramic additives, organic solvents, binders, dispersants, etc. can be added to particles such as barium titanate (BaTiO3) according to the purpose of the present disclosure.

[0033] In addition, the dielectric layer 111 can be formed using a dielectric material such as barium titanate (BaTiO3) (as the main component), and thus can include a dielectric microstructure after sintering. The dielectric microstructure may include a plurality of grains, grain boundaries provided between adjacent grains, and triple points provided at points where three or more grain boundaries contact each other, and each of the grains, grain boundaries, and triple points can be plural.

[0034] In the present disclosure, in order to identify the dielectric layers included in the covering portions 112 and 113 described below, the dielectric layer 111 included in the capacitance forming portion Ac can be defined as the first dielectric layer 111, and the dielectric layers included in the covering portions 112 and 113 can be defined as the second dielectric layer.

[0035] In the present disclosure, as an example of a more specific method of measuring the content of an element included in the multilayer electronic component 100, in the case of a destructive method, the components may be analyzed using an energy dispersive X-ray spectrometer (EDS) mode of a scanning electron microscope (SEM), an EDS mode of a transmission electron microscope (TEM), or an EDS mode of a scanning transmission electron microscope (STEM). First, a thin slice analysis sample is prepared using a focused ion beam (FIB) device in a region containing a dielectric microstructure in a cross section of a sintered body or a cross section of a sintered side edge portion. Then, a damaged layer on the surface of the thin slice analysis sample is removed using xenon (Xe) ion milling or argon (Ar) ion milling, and then, a qualitative / quantitative analysis is performed by mapping each component to be measured in an image obtained using SEM-EDS, TEM-EDS, or STEM-EDS. In this case, the qualitative / quantitative analysis graph of each component may be expressed in terms of weight percentage (wt%), atomic percentage (at%), or molar percentage (mol%) of each element. In this case, the qualitative / quantitative analysis graph of each component can be expressed by converting the mole number of another specific component to the mole number of the specific component. For example, the ratio of the mole number of the specific component to the mole number of another specific component can be expressed by conversion.

[0036] By another method, the sheet may be pulverized and a region including a dielectric microstructure may be selected, and in the region including the selected dielectric microstructure, a device such as an inductively coupled plasma optical emission spectrometer (ICP-OES) and an inductively coupled plasma mass spectrometer (ICP-MS) may be used to analyze the composition of the region including the dielectric microstructure.

[0037] In an example embodiment of the present disclosure, the dielectric layer 111 of the capacitance forming part Ac may not include gallium (Ga).

[0038] Here, the fact that the dielectric layer 111 of the capacitance forming portion Ac does not include gallium (Ga) may mean that the dielectric slurry or the dielectric green sheet does not include gallium (Ga) before the dielectric layer 111 is sintered, or may mean that the dielectric layer 111 disposed in the central region of the capacitance forming portion Ac does not include gallium (Ga).

[0039] That is, since gallium (Ga) included in the covering portions 112 and 113 to be described below undergoes a sintering process such as high-temperature heat treatment, gallium (Ga) may diffuse into a region of the dielectric layer 111 of the capacitor forming portion Ac adjacent to the covering portions 112 and 113, which may mean that the dielectric layer 111 disposed in the central portion of the capacitor forming portion Ac does not include gallium (Ga).

[0040] For example, based on a cross section in the first direction and the second direction taken from the center of the body 110 in the third direction, when a 10 μm×10 μm area set in the central portion in the first direction and the second direction is observed in an energy dispersive X-ray spectrometer (EDS) mode of a scanning electron microscope (SEM) and the gallium (Ga) component is mapped, the above-mentioned “the dielectric layer 111 set in the central portion of the capacitor forming portion Ac does not include gallium (Ga)” may mean that gallium (Ga) is not detected, or that the amount of gallium (Ga) detected is less than 0.1 at %.

[0041] The thickness td of the dielectric layer 111 is not limited.

[0042] However, in order to achieve high capacitance of the multilayer electronic component 100, the thickness td of the dielectric layer 111 may be less than or equal to 3.0 μm, and in order to more easily achieve miniaturization and high capacitance, the thickness td of the dielectric layer 111 may be less than or equal to 1.0 μm, preferably, less than or equal to 0.6 μm, and more preferably, less than or equal to 0.4 μm.

[0043] Here, the thickness td of the dielectric layer 111 may refer to a thickness td of the dielectric layer 111 disposed between the first and second internal electrodes 121 and 122 .

[0044] In addition, the thickness td of the dielectric layer 111 may refer to the size of the dielectric layer 111 in the first direction. In addition, the thickness td of the dielectric layer 111 may refer to the average thickness td of the dielectric layer 111, and may refer to the average size of the dielectric layer 111 in the first direction. For example, the average thickness td of the dielectric layer 111 may refer to the average thickness of at least one dielectric layer in the dielectric layer 111.

[0045] The average size of the dielectric layer 111 in the first direction can be measured by scanning the cross section of the body 110 in the first direction and the second direction with a scanning electron microscope (SEM) at a magnification of 10000 times to obtain an image. More specifically, the average size of one dielectric layer 111 in the first direction can be an average value calculated by measuring the size of the first direction at 30 points of one dielectric layer 111 in the scanned image that are spaced apart from each other at equal intervals in the second direction. 30 points spaced apart from each other at equal intervals can be specified in the capacitor forming portion Ac. In addition, when the average value is obtained by extending the average value measurement to 10 dielectric layers 111, the average thickness of the dielectric layer 111 in the first direction can be more generalized.

[0046] The internal electrodes 121 and 122 may be alternately stacked with the dielectric layers 111 .

[0047] The internal electrodes 121 and 122 may include a first internal electrode 121 and a second internal electrode 122, and the first internal electrodes 121 and the second internal electrodes 122 may be alternately arranged to face each other with the dielectric layer 111 interposed therebetween, and may be exposed to the third surface 3 and the fourth surface 4 of the body 110, respectively.

[0048] More specifically, the first inner electrode 121 may be spaced apart from the fourth surface 4 and may be exposed to the third surface 3, and the second inner electrode 122 may be spaced apart from the third surface 3 and may be exposed to the fourth surface 4. The first outer electrode 131 may be disposed on the third surface 3 of the body 110 and may be connected to the first inner electrode 121, and the second outer electrode 132 may be disposed on the fourth surface 4 of the body 110 and may be connected to the second inner electrode 122.

[0049] That is, the first internal electrode 121 may be connected to the first external electrode 131 without being connected to the second external electrode 132, and the second internal electrode 122 may be connected to the second external electrode 132 without being connected to the first external electrode 131. In this case, the first internal electrode 121 and the second internal electrode 122 may be electrically separated from each other by the dielectric layer 111 disposed therebetween.

[0050] In addition, the body 110 may be formed by alternately stacking ceramic green sheets on which the conductive paste for the first internal electrode 121 is printed and ceramic green sheets on which the conductive paste for the second internal electrode 122 is printed, and then sintering the ceramic green sheets.

[0051] The material included in the internal electrodes 121 and 122 is not particularly limited, and any material having excellent conductivity may be used. For example, the internal electrodes 121 and 122 may include one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0052] In addition, the internal electrodes 121 and 122 may be formed by printing a conductive paste for internal electrodes including one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof on a ceramic green sheet. The printing method of the conductive paste for internal electrodes may be a screen printing method or a gravure printing method, but the present disclosure is not limited thereto.

[0053] In addition, the thickness te of the internal electrodes 121 and 122 is not limited.

[0054] However, in order to achieve high capacitance of the multilayer electronic component 100, the thickness te of the internal electrodes 121 and 122 may be less than or equal to 1.0 μm, and in order to more easily achieve miniaturization and high capacitance, the thickness te of the internal electrodes 121 and 122 may be less than or equal to 0.6 μm, and more preferably, less than or equal to 0.4 μm.

[0055] Here, the thickness te of the internal electrodes 121 and 122 may refer to a size in a first direction of the internal electrodes 121 and 122. In addition, the thickness te of the internal electrodes 121 and 122 may refer to an average thickness te of the internal electrodes 121 and 122, and may refer to an average size in the first direction of the internal electrodes 121 and 122. For example, the average thickness te of the internal electrodes 121 and 122 may refer to an average thickness of at least one of the internal electrodes 121 and 122.

[0056] The average size of the internal electrodes 121 and 122 in the first direction can be measured by scanning the cross section of the body 110 in the first direction and the second direction with a scanning electron microscope (SEM) at a magnification of 10000 times to obtain an image. More specifically, the average size of one internal electrode in the first direction can be an average value calculated by measuring the size of the first direction at 30 points of one internal electrode in the scanned image that are spaced apart from each other at equal intervals. 30 points spaced apart from each other at equal intervals can be specified in the capacitor forming portion Ac. In addition, when the average value is obtained by extending the average value measurement to 10 internal electrodes 121 and 122, the average thickness of the internal electrodes 121 and 122 in the first direction can be more generalized.

[0057] In addition, in the example embodiment of the present disclosure, an average thickness td of at least one of the plurality of dielectric layers 111 and an average thickness te of at least one of the plurality of internal electrodes 121 and 122 may satisfy 2×te <td。

[0058] In other words, the average thickness td of one dielectric layer 111 may be greater than twice the average thickness te of one internal electrode 121 or 122. Preferably, the average thickness td of the plurality of dielectric layers 111 may be greater than twice the average thickness te of the plurality of internal electrodes 121 and 122.

[0059] Generally, high voltage electronic components have major issues in reliability due to the reduction of breakdown voltage (BDV) under high voltage environment.

[0060] Therefore, in order to prevent the breakdown voltage (BDV) from being reduced under a high voltage environment, the average thickness td of the dielectric layer 111 can be made greater than twice the average thickness te of the internal electrodes 121 and 122, so that the thickness of the dielectric layer, which is the distance between the internal electrodes, can be increased, thereby improving the breakdown voltage (BDV) characteristics.

[0061] When the average thickness td of the dielectric layer 111 is less than or equal to twice the average thickness te of the internal electrodes 121 and 122 , the average thickness of the dielectric layer as the average distance between the internal electrodes may be thin, which may reduce a breakdown voltage and may cause a short circuit between the internal electrodes.

[0062] In addition, the body 110 may include cover parts 112 and 113 disposed on both surfaces of the capacitance forming part Ac in the first direction.

[0063] Specifically, the covering portions 112 and 113 may include a first covering portion 112 disposed on one surface of the capacitor forming portion Ac in the first direction and a second covering portion 113 disposed on another surface of the capacitor forming portion Ac in the first direction, and more specifically, the covering portions 112 and 113 may include an upper covering portion 112 (i.e., the first covering portion 112) disposed above the capacitor forming portion Ac in the first direction and a lower covering portion 113 (i.e., the second covering portion 113) disposed below the capacitor forming portion Ac in the first direction.

[0064] The upper cover 112 and the lower cover 113 may be formed by stacking a single dielectric layer or two or more dielectric layers on the upper and lower surfaces of the capacitor forming part Ac in the first direction, respectively, and may be mainly used to prevent damage to the internal electrodes 121 and 122 due to physical stress or chemical stress.

[0065] The upper cover 112 and the lower cover 113 do not include the internal electrodes 121 and 122, and may include the same base dielectric material as that of the first dielectric layer 111. That is, the upper cover 112 and the lower cover 113 may include a ceramic material, and may include, for example, a barium titanate (BaTiO 3 )-based ceramic material as a base material.

[0066] The second dielectric layer (the dielectric layer included in the cover portions 112 and 113) may be formed using a dielectric material such as barium titanate (BaTiO3), and thus may include a dielectric microstructure after sintering. The dielectric microstructure includes a plurality of crystal grains, grain boundaries disposed between adjacent crystal grains, and a triple point disposed at a point where three or more crystal boundaries contact each other, and each of the crystal grains, the grain boundaries, and the triple point may be plural.

[0067] However, the composition of the second dielectric layer may be different from that of the first dielectric layer 111 , for example, the second dielectric layer may include gallium (Ga).

[0068] That is, the capping parts 112 and 113 may include gallium (Ga). In addition, the content of gallium (Ga) in the capping parts 112 and 113 may be greater than the content of gallium (Ga) in the dielectric layer 111 .

[0069] Since the covers 112 and 113 include gallium (Ga), low temperature sintering can be performed, so that excessive grain growth can be suppressed and the grain size distribution can be improved by inducing uniform grain growth. Therefore, the number of pores (P) can be reduced to improve the densification of the covers 112 and 113, thereby improving moisture-proof reliability. In addition, even when the covers 112 and 113 are subjected to external impact, the generation of cracks can be suppressed, thereby improving mechanical properties.

[0070] In addition, the cover parts 112 and 113 may include tin (Sn).

[0071] Since the cover parts 112 and 113 include tin (Sn), the grain size of the ceramic material may be reduced and the grain size may be controlled to an appropriate level, thereby alleviating electric field concentration and improving electrical performance.

[0072] In the present disclosure, the molar number of gallium (Ga) and tin (Sn) included in the cover portions 112 and 113 may be the added content based on 100 moles of the main component of the barium titanate (BaTiO3) base material, or the molar number of gallium (Ga) and tin (Sn) included in the cover portions 112 and 113 may be the added molar number based on 100 moles of barium (Ba), or the molar number of gallium (Ga) and tin (Sn) included in the cover portions 112 and 113 may be the added molar number based on 100 moles of titanium (Ti), but the present disclosure is not particularly limited thereto. For example, when a material other than barium (Ba) is substituted or dissolved in the A site of the barium (Ba) ion site which is the main component of the barium titanate (BaTiO3) base material, the molar number of gallium (Ga) and tin (Sn) included in the cover portions 112 and 113 may be based on 100 moles of the A site or 100 moles of titanium (Ti). Alternatively, when a material other than titanium (Ti) is substituted or dissolved in the B site of the titanium (Ti) ion site which is the main component of the barium titanate (BaTiO3) matrix material, the number of moles of gallium (Ga) and tin (Sn) included in the covers 112 and 113 may be based on 100 moles of the B site or 100 moles of barium (Ba). Similarly, when a material other than barium (Ba) is substituted or dissolved in the A site of the barium (Ba) ion site which is the main component of the barium titanate (BaTiO3) matrix material and a material other than titanium (Ti) is substituted or dissolved in the B site which is the titanium (Ti) ion site, the number of moles of gallium (Ga) and tin (Sn) included in the covers 112 and 113 may be based on 100 moles of the A site or 100 moles of the B site.

[0073] In an example embodiment of the present disclosure, a ratio (A / B) of a mole number (A) of a main component of gallium (Ga) included in the cover portions 112 and 113 based on 100 moles of the base material to a mole number (B) of a main component of tin (Sn) included in the cover portions 112 and 113 based on 100 moles of the base material may satisfy 0.2≤A / B≤4.0.

[0074] In other words, a ratio (A / B) of the number of moles (A) of gallium (Ga) included in the cover portions 112 and 113 based on 100 moles of barium (Ba) to the number of moles (B) of tin (Sn) included in the cover portions 112 and 113 based on 100 moles of barium (Ba) may satisfy 0.2 or more and 4.0 or less.

[0075] In addition, a ratio of the mole number of gallium (Ga) included in the cover parts 112 and 113 based on 100 moles of titanium (Ti) to the mole number of tin (Sn) included in the cover parts 112 and 113 based on 100 moles of titanium (Ti) may satisfy 0.2 or more and 4.0 or less.

[0076] Hereinafter, the molar number, content, ratio, etc. of other components may be described based on 100 moles of the main component of the matrix material, but may correspond to the molar number, content or ratio of other components based on 100 moles of barium (Ba), 100 moles of titanium (Ti), 100 moles of A sites or 100 moles of B sites.

[0077] Since the ratio (A / B) of the number of moles (A) of the main component of gallium (Ga) included in the covering portions 112 and 113 based on 100 moles of the base material to the number of moles (B) of the main component of tin (Sn) included in the covering portions 112 and 113 based on 100 moles of the base material satisfies 0.2≤A / B≤4.0, in the dielectric slurry state, the main component or the sub-component of the dielectric base material may not be agglomerated, and the grain size may be controlled and the grains may grow uniformly, so that the mean time to failure (MTTF) may be improved, and the number of pores (P) may be reduced to improve moisture-proof reliability.

[0078] When the ratio (A / B) of the number of moles (A) of the main component of gallium (Ga) included in the covering portions 112 and 113 based on 100 moles of the base material to the number of moles (B) of the main component of tin (Sn) included in the covering portions 112 and 113 based on 100 moles of the base material is less than 0.2 (A / B<0.2), the effect of adding gallium (Ga) may be difficult to achieve due to the lack of gallium (Ga).

[0079] When the ratio (A / B) of the number of moles (A) of gallium (Ga) included in the covering parts 112 and 113 to the number of moles (B) of tin (Sn) included in the covering parts 112 and 113, based on 100 moles of the main component of the matrix material, is greater than 4.0 (4.0 < A / B), aggregates may appear in the dielectric paste, resulting in reduced dispersibility, which may deteriorate the electrical properties or reliability such as the mean time to failure (MTTF).

[0080] In an embodiment of the present disclosure, the number of moles (A) of gallium (Ga) included in the covering parts 112 and 113, based on 100 moles of the main component of the matrix material, may be greater than or equal to 0.3 mole and less than or equal to 6.0 moles. In other words, 0.3 mole ≤ A ≤ 6.0 moles can be satisfied.

[0081] Optionally, the number of moles of gallium (Ga) included in the covering parts 112 and 113, based on 100 moles of barium (Ba), may be greater than or equal to 0.3 mole and less than or equal to 6.0 moles.

[0082] Optionally, the number of moles of gallium (Ga) included in the covering parts 112 and 113, based on 100 moles of titanium (Ti), may be greater than or equal to 0.3 mole and less than or equal to 6.0 moles.

[0083] Since the number of moles (A) of gallium (Ga) included in the covering parts 112 and 113, based on 100 moles of the main component of the matrix material, satisfies 0.3 mole ≤ A ≤ 6.0 moles, the number of pores (P) can be reduced by lowering the sintering temperature of the covering parts 112 and 113. Therefore, the densification of the covering parts 112 and 113 can be improved, thereby improving the moisture-proof reliability. In addition, even when the covering parts 112 and 113 are subjected to external impacts, the generation of cracks can be suppressed, so the mechanical properties can be improved.

[0084] On the other hand, when the number of moles (A) of gallium (Ga) included in the covering parts 112 and 113, based on 100 moles of the main component of the matrix material, is less than 0.3 mole (A < 0.3 mole), there may be a risk that the moisture-proof reliability may not be improved because the number of pores (P) cannot be sufficiently reduced. And when the number of moles (A) of gallium (Ga) included in the covering parts 112 and 113, based on 100 moles of the main component of the matrix material, is greater than 6.0 moles (6.0 moles < A), excessive addition of gallium (Ga) may reduce the dispersibility of the dielectric paste, resulting in side effects such as a decrease in the breakdown voltage (BDV) or a reduction in mechanical strength.

[0085] In addition, the number of moles (B) of tin (Sn) included in the covering parts 112 and 113, based on 100 moles of the main component of the matrix material, may be greater than or equal to 0.1 mole and less than or equal to 3.0 moles. In other words, 0.1 mole ≤ B ≤ 3.0 moles can be satisfied.

[0086] Optionally, the number of moles of tin (Sn) included in the covering parts 112 and 113, based on 100 moles of barium (Ba), may be greater than or equal to 0.1 mole and less than or equal to 3.0 moles.

[0087] Optionally, the number of moles of tin (Sn) included in the covering parts 112 and 113, based on 100 moles of titanium (Ti), may be greater than or equal to 0.1 mole and less than or equal to 3.0 moles.

[0088] Since the number of moles (B) of tin (Sn) included in the covering parts 112 and 113, based on 100 moles of the main component of the matrix material, satisfies 0.1 mole ≤ B ≤ 3.0 moles, the grain growth of the covering parts 112 and 113 can be controlled, and the grain growth can be controlled to an appropriate size through uniform grain growth, so as to improve electrical characteristics such as breakdown voltage (BDV) and reliability such as mean time to failure (MTTF).

[0089] On the other hand, when the number of moles (B) of tin (Sn) included in the covering parts 112 and 113, based on 100 moles of the main component of the matrix material, is less than 0.1 mole (B < 0.1 mole), it may be difficult to achieve the effect of adding tin (Sn), and when the number of moles (B) of tin (Sn) included in the covering parts 112 and 113, based on 100 moles of the main component of the matrix material, is greater than 3.0 moles (3.0 moles < B), due to the excessive addition of tin (Sn), the electrical performance may not be achieved due to the excessive control of grain growth.

[0090] In an exemplary embodiment of the present disclosure, the average size (AVG) of a plurality of grains included in the covering parts 112 and 113 may be greater than or equal to 170 nm and less than or equal to 200 nm.

[0091] The method for measuring the average size (AVG) of a plurality of grains is not particularly limited. However, for example, after obtaining an image by capturing a 10 μm × 10 μm area of the cross-section of the first covering part in the first direction and the third direction with a scanning electron microscope (SEM), the size of the grains included in the corresponding area can be measured through a program, and then its average value can be calculated and obtained.

[0092] In this case, when a ratio (STD / AVG) of a size standard deviation (STD) of a plurality of crystal grains included in the covers 112 and 113 to an average size (AVG) of a plurality of crystal grains included in the covers 112 and 113 is referred to as a coefficient of variation (CV), a ratio of the coefficient of variation (CV) of the covers 112 and 113 may be greater than or equal to 50% and less than or equal to 60%. That is, 50%≤CV≤60% may be satisfied.

[0093] Since the coefficient of variation (CV) of the cover portions 112 and 113 satisfies 50% or more and 60% or less, electrical properties such as breakdown voltage (BDV) may be improved through uniform grain growth, and reliability such as mean time to failure (MTTF) may be improved.

[0094] The lower limit value of the fraction of the coefficient of variation (CV) of the covering portions 112 and 113 is not particularly limited, but it may not be easy to control the coefficient of variation (CV) to less than 50% while inducing grain growth, so the lower limit value is set to 50%.

[0095] In addition, the thickness tc of the covering portions 112 and 113 is not limited.

[0096] However, to more easily achieve miniaturization and high capacitance of multilayer electronic component 100 , thickness tc of covers 112 and 113 may be 100 μm or less, preferably 30 μm or less, and more preferably 20 μm or less in ultra-small products.

[0097] Here, the thickness tc of the covers 112 and 113 may refer to the size of the covers 112 and 113 in the first direction. In addition, the thickness tc of the covers 112 and 113 may refer to the average thickness tc of the covers 112 and 113 and may refer to the average size of the covers 112 and 113 in the first direction.

[0098] The average size of the covering portions 112 and 113 in the first direction may be measured by an image obtained by scanning a cross section of the body 110 in the first direction and the second direction with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, the average size of the covering portions 112 and 113 in the first direction may refer to an average value calculated by measuring the size of one covering portion in the first direction at 30 points equally spaced from each other in the second direction in an image obtained by scanning one covering portion.

[0099] In addition, the average size of the covering portion in the first direction measured by the above method may have substantially the same size as the average size of the covering portion in the first direction measured in cross sections of the body 110 in the first and third directions.

[0100] Furthermore, the multilayer electronic component 100 may include side edge portions 114 and 115 disposed on both side surfaces of the capacitance forming portion Ac in the third direction.

[0101] More specifically, the side edge portions 114 and 115 may include a first side edge portion 114 disposed on one side surface of the capacitance forming portion Ac in the third direction and a second side edge portion 115 disposed on the other side surface of the capacitance forming portion Ac in the third direction.

[0102] like Figure 4 As described above, based on the cross-sections of the body 110 in the first and third directions, the side edge portions 114 and 115 may refer to regions between both ends of the first and second internal electrodes 121 and 122 in the third direction and the outer surface of the body 110 in the third direction.

[0103] That is, the first side margin portion 114 and the second side margin portion 115 may indicate regions that do not include the internal electrodes 121 and 122 .

[0104] The side margin parts 114 and 115 may mainly serve to prevent damage to the internal electrodes 121 and 122 due to physical stress or chemical stress.

[0105] In addition, the width wm of the first side margin portion 114 and the second side margin portion 115 is not limited.

[0106] However, to more easily achieve miniaturization and high capacitance of the multilayer electronic component 100 , the width wm of the side edge portions 114 and 115 may be 100 μm or less, preferably 30 μm or less, and more preferably 20 μm or less in ultra-small products.

[0107] Here, the width wm of the side margin portions 114 and 115 may refer to the size of the side margin portions 114 and 115 in the third direction. In addition, the width wm of the side margin portions 114 and 115 may refer to the average width wm of the side margin portions 114 and 115 and may refer to the average size of the side margin portions 114 and 115 in the third direction.

[0108] The average size of the side edge portions 114 and 115 in the third direction may be measured by scanning the cross-sections of the body 110 in the first direction and the third direction with a scanning electron microscope (SEM) at a magnification of 10,000 times to obtain an image. More specifically, the average size of the side edge portions 114 and 115 in the third direction may refer to an average value calculated by measuring the size of the side edge portion in the third direction at 10 points equally spaced from each other in the first direction in the image obtained by scanning the side edge portion.

[0109] In the example embodiment of the present disclosure, a structure in which the multilayer electronic component 100 has two external electrodes 131 and 132 is described, but the number or shape of the external electrodes 131 and 132 may be changed according to the shapes of the internal electrodes 121 and 122 or other purposes.

[0110] The external electrodes 131 and 132 may be disposed on the body 110 and may be connected to the internal electrodes 121 and 122 .

[0111] More specifically, the external electrodes 131 and 132 may be disposed on the third surface 3 and the fourth surface 4 of the body 110, respectively, and may include a first external electrode 131 and a second external electrode 132 respectively connected to the first internal electrode 121 and the second internal electrode 122. That is, the first external electrode 131 may be disposed on the third surface 3 of the body 110 and may be connected to the first internal electrode 121, and the second external electrode 132 may be disposed on the fourth surface 4 of the body 110 and may be connected to the second internal electrode 122.

[0112] In addition, the external electrodes 131 and 132 may be provided to extend to a portion of the first surface 1 and a portion of the second surface 2 of the body 110, and / or may also be provided to extend to a portion of the fifth surface 5 and a portion of the sixth surface 6 of the body 110. That is, the first external electrode 131 may be provided on a portion of the first surface 1, a portion of the second surface 2, a portion of the fifth surface 5, and a portion of the sixth surface 6 of the body 110 and on the third surface 3 of the body 110, and the second external electrode 132 may be provided on a portion of the first surface 1, a portion of the second surface 2, a portion of the fifth surface 5, and a portion of the sixth surface 6 of the body 110 and on the fourth surface 4 of the body 110.

[0113] In addition, the external electrodes 131 and 132 may be formed using any material such as metal as long as the material has conductivity, and a specific material may be determined in consideration of electrical properties, structural stability, etc., and may also have a multi-layer structure.

[0114] For example, the external electrodes 131 and 132 may include an electrode layer disposed on the body 110 and a plating layer disposed on the electrode layer.

[0115] For a more specific example of the electrode layer, the electrode layer may include first electrode layers 131a and 132a, the first electrode layers 131a and 132a may be sintered electrodes including a first conductive metal and glass, and / or the electrode layer may include second electrode layers 131b and 132b, the second electrode layers 131b and 132b may be resin-based electrodes including a second conductive metal and resin.

[0116] Here, the first conductive metal may refer to a conductive metal included in the first electrode layers 131a and 132a, and the second conductive metal may refer to a conductive metal included in the second electrode layers 131b and 132b. In this case, the first conductive metal and the second conductive metal may be the same as or different from each other, and when a plurality of metal materials are included, at least one metal material may be the same, but the present disclosure is not particularly limited thereto.

[0117] In addition, the electrode layer may be formed by sequentially forming the first electrode layers 131a and 132a and the second electrode layers 131b and 132b on the body 110. Alternatively, the electrode layer may be formed by forming only the first electrode layers 131a and 132a or only the second electrode layers 131b and 132b on the body 110.

[0118] A material having excellent conductivity may be used as the first conductive metal and the second conductive metal included in the electrode layer. For example, the first conductive metal and the second conductive metal may include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof, but the present disclosure is not particularly limited thereto.

[0119] In an exemplary embodiment of the present disclosure, the electrode layer may have a double-layer structure including first electrode layers 131a and 132a and second electrode layers 131b and 132b, and thus the electrode layer may include: first electrode layers 131a and 132a including conductive metal and glass; and second electrode layers 131b and 132b disposed on the first electrode layers 131a and 132a and including conductive metal and resin.

[0120] The first electrode layers 131 a and 132 a may serve to improve adhesion with the body 110 by including glass, and the second electrode layers 131 b and 132 b may serve to improve bending strength by including resin.

[0121] The conductive metal used in the first electrode layers 131a and 132a is not particularly limited as long as the conductive metal has a material that can be electrically connected to the internal electrodes 121 and 122 for forming a capacitor, and the conductive metal may include, for example, one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof. The first electrode layers 131a and 132a may be formed by coating a conductive paste prepared by adding glass frit to conductive metal particles and then sintering the conductive paste.

[0122] The conductive metal included in the second electrode layers 131 b and 132 b may serve to electrically connect to the first electrode layers 131 a and 132 a .

[0123] The conductive metal included in the second electrode layers 131 b and 132 b is not particularly limited as long as the conductive metal has a material that can be electrically connected to the first electrode layers 131 a and 132 a, and the conductive metal may include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0124] The conductive metal included in the second electrode layers 131b and 132b may include one or more of spherical particles and flaky particles. That is, the conductive metal may consist of only flaky particles, or only spherical particles, or may be a mixture of flaky particles and spherical particles. Here, the spherical particles may include a shape that is not completely spherical, for example, a shape in which the length ratio of the major axis to the minor axis (major axis / minor axis) is less than or equal to 1.45. Flaky particles may refer to particles having a flat and elongated shape, and the present disclosure is not particularly limited thereto, but the length ratio of the major axis to the minor axis (major axis / minor axis) may be, for example, greater than or equal to 1.95. The lengths of the major axis and the minor axis of the spherical particles and the flaky particles may be measured from an image obtained by scanning a cross section of the first direction and the second direction cut from the central portion of the multilayer electronic component in the third direction with a scanning electron microscope (SEM).

[0125] The resin included in the second electrode layers 131b and 132b may ensure adhesion and function as a shock absorber. The resin included in the second electrode layers 131b and 132b may have adhesion and shock absorption, and the resin is not particularly limited as long as it can be mixed with conductive metal particles to make a paste, and may include, for example, epoxy-based resin.

[0126] In addition, the second electrode layers 131b and 132b may include a plurality of conductive metal particles, an intermetallic compound, and a resin. The intermetallic compound may be included to further improve electrical connectivity with the first electrode layers 131a and 132a. The intermetallic compound may be used to improve electrical connectivity by connecting a plurality of metal particles, and may be used to surround a plurality of conductive metal particles and connect the conductive metal particles to each other.

[0127] In this case, the intermetallic compound may include a metal having a melting point lower than the curing temperature of the resin and a high melting point metal having a melting point higher than the melting point of the metal. That is, the paste used to form the second electrode layers 131b and 132b includes metal particles having a melting point lower than the curing temperature of the resin and high melting point metal particles having a melting point higher than the melting point of the metal particles, and the metal particles having a melting point lower than the curing temperature of the resin melt during the drying and curing process and form an intermetallic compound with a portion of the high melting point metal particles to surround the remaining high melting point metal particles. In this case, the intermetallic compound may preferably include a low melting point metal having a melting point of 300°C or less.

[0128] For example, the intermetallic compound may include Sn having a melting point of 213° C. to 220° C. Sn particles may be included in the paste for forming the second electrode layers 131 b and 132 b, and during the drying and curing process, the Sn particles melt, and the melted Sn wets high melting point metal particles such as Ag, Ni, or Cu (included in the paste for forming the second electrode layers 131 b and 132 b) by capillary action, and reacts with some of the Ag, Ni, or Cu metal particles to form intermetallic compounds such as Ag3Sn, Ni3Sn4, Cu6Sn5, and Cu3Sn. Ag, Ni, or Cu that does not participate in the reaction remains in the form of conductive metal particles (i.e., forming a plurality of conductive metal particles in the second electrode layers 131 b and 132 b).

[0129] Thus, the plurality of conductive metal particles may include one or more of Ag, Ni, and Cu, and the intermetallic compound may include one or more of Ag3Sn, Ni3Sn4, Cu6Sn5, and Cu3Sn.

[0130] In addition, the external electrodes 131 and 132 may include plating layers 131c and 132c. The plating layers 131c and 132c may be used to improve mounting characteristics.

[0131] The types of the plating layers 131c and 132c are not particularly limited, and Figure 3 , only single-layer plating layers 131c and 132c are shown, but the present disclosure is not limited thereto, and the plating layers 131c and 132c may be single-layer plating layers 131c and 132c including one or more of nickel (Ni), tin (Sn), palladium (Pd), and alloys thereof, or may be formed of a plurality of layers.

[0132] For a more specific example of the plating layers 131c and 132c, the plating layers 131c and 132c may be Ni plating layers or Sn plating layers, or may be a form in which a Ni plating layer and a Sn plating layer are sequentially formed on an electrode layer, or may be a form in which a Sn plating layer, a Ni plating layer, and a Sn plating layer are sequentially formed on an electrode layer. In addition, the plating layers 131c and 132c may include a plurality of Ni plating layers and / or a plurality of Sn plating layers.

[0133] The size of the multilayer electronic component 100 does not have to be particularly limited.

[0134] However, in order to achieve both miniaturization and high capacitance, the thickness of the dielectric layer and the internal electrode needs to be thinned to increase the number of stacked layers, and therefore, the effect according to the present disclosure may be more significant in a multilayer electronic component 100 having a size of 1005 (length×width: 1.0 mm×0.5 mm) or less.

[0135] Hereinafter, the present disclosure will be described in more detail through examples, but this is intended to help specific understanding of the present disclosure, and the scope of the present disclosure is not limited to the exemplary embodiments.

[0136] (Example Embodiment) Hereinafter, dielectric slurry agglomerates, average grain size (AVG), coefficient of variation of grain size (CV), porosity (%), breakdown voltage (BDV), mean time to failure (MTTF), and moisture-proof reliability defect rate (%) were evaluated according to a ratio (A / B) of the number of moles (A) of a main component of gallium (Ga) included in a cover based on 100 moles of a base material to the number of moles (B) of a main component of tin (Sn) included in a cover based on 100 moles of a base material, and the results are shown in Table 1.

[0137] Regarding whether the dielectric slurry is aggregated, when an aggregate including gallium (Ga) is detected in the dielectric slurry state, this is evaluated as “O”, and when an aggregate including gallium (Ga) is not detected, this is evaluated as “X”.

[0138] Regarding the average grain size and the coefficient of variation (CV), after measuring the size of the grains in a 23 μm×23 μm region included in the cross-sections in the first and third directions of the first cover portion, the average value and standard deviation value thereof were calculated, and then the average grain size and the coefficient of variation of the grains were recorded.

[0139] Regarding the porosity (%), the area fraction (%) of pores (P) in a region of 23 μm×23 μm in the cross section of the first covering portion in the first direction and the third direction was calculated and recorded.

[0140] Regarding the breakdown voltage (BDV), when the voltage (V) values ​​of 50 sample pieces of each test example were increased, the average value of the voltage (V) values ​​at the time of short circuit occurrence was calculated and recorded.

[0141] Regarding the mean time to failure (MTTF), when a voltage of 9.45 V was applied to 40 sample pieces of each test example under a temperature condition of 125° C., the mean time to failure (MTTF) was calculated and described using a time value at which a short circuit occurred.

[0142] Regarding the moisture-proof reliability evaluation, when a voltage of 9.45 V was applied to 40 sample pieces of each test example for 24 hours under a temperature condition of 85°C and a relative humidity condition of 85%, the number of sample pieces in which short circuits occurred among all the sample pieces was expressed as a percentage (defective rate). In addition, the moisture-proof reliability defect rate (%) in Table 1 is a rounded value.

[0143] Table 1:

[0144] In Test Example 1, the amount of tin (Sn) added was 3.0 mol or less, but gallium (Ga) was not added. Therefore, the average grain size was relatively small, 166 nm, and the mean time to failure (MTTF) was 13 hours, which was evaluated as poor reliability. In addition, the porosity was high, 0.415%, and similarly, the moisture-proof reliability defect rate was evaluated as poor, 23%. This is because gallium (Ga) was not added, whereby the reliability was determined to be poor due to the lack of sufficient grain growth, and the moisture-proof reliability was determined to be poor due to the generation of a large number of pores. In Test Examples 2 to 6, the ratio (A / B) of the number of moles (A) of the main component of the base material based on 100 moles of gallium (Ga) included in the covering portion to the number of moles (B) of the main component of the base material based on 100 moles of tin (Sn) included in the covering portion corresponds to 0.2 to 4.0. Due to the appropriate grain growth, the breakdown voltage was excellent, exceeding 50V, and the mean time to failure (MTTF) was also longer than that of Test Example 1. The porosity (%) was also measured to be less than 0.2%, and thus the moisture-proof reliability defect rate was improved compared to Test Example 1. This is because appropriate amounts of tin (Sn) and gallium (Ga) were added, reliability was improved due to sufficient grain growth, and void generation was suppressed, so that the moisture-proof reliability was evaluated as excellent.

[0145] In Test Examples 7 and 8, the ratio (A / B) of the number of moles (A) of the main component of gallium (Ga) included in the cover based on 100 moles of the base material to the number of moles (B) of the main component of tin (Sn) included in the cover based on 100 moles of the base material corresponds to 4.67 and 6.0, respectively. As the content of gallium (Ga) increases relative to the content of tin (Sn), it is confirmed that agglomerates of gallium (Ga) are observed due to poor dispersibility of the dielectric slurry, the breakdown voltage (BDV) is also reduced to 41V and 42V, respectively, and the mean time to failure (MTTF) is gradually reduced to 16 hours and 15 hours, respectively. Since an excessive amount of gallium (Ga) is added relative to tin (Sn), the porosity is improved and the moisture-proof reliability becomes excellent compared to Test Example 1, but the electrical performance and reliability are evaluated as poor due to excessive grain growth.

[0146] In this way, when gallium (Ga) and tin (Sn) are added so that the ratio (A / B) of the number of moles (A) of gallium (Ga) to the number of moles (B) of tin (Sn) is 0.2 to 4.0, it can be seen that electrical characteristics, reliability, and moisture resistance reliability are improved.

[0147] Figure 5A are images obtained by mapping tin (Sn) elements in a 10 μm×10 μm area of ​​a cross section in the first direction and the third direction of the cover portion in the inventive example in an EDS analysis mode of a transmission electron microscope (TEM), and Figure 5B is an image obtained by mapping gallium (Ga) element in the same region of the cross section of the cover portion in the inventive example in the EDS analysis mode of a transmission electron microscope (TEM).

[0148] exist Figure 5A and Figure 5B In an exemplary embodiment, a ratio (A / B) of a mole number (A) of a main component of gallium (Ga) included in the cover based on 100 moles of the base material to a mole number (B) of a main component of tin (Sn) included in the cover based on 100 moles of the base material satisfies 0.2≤A / B≤4.0.

[0149] In this way, it can be confirmed that tin (Sn) and gallium (Ga) are detected in the cross section of the covering portion, and since agglomeration of tin (Sn) or gallium (Ga) is not observed, when the ratio (A / B) of the number of moles (A) of the main component of gallium (Ga) included in the covering portion based on 100 moles of the base material to the number of moles (B) of the main component of tin (Sn) included in the covering portion based on 100 moles of the base material satisfies 0.2≤A / B≤4.0, it can be seen that the dielectric slurry has excellent dispersibility and does not agglomerate.

[0150] Fig. 6A is an image obtained by observing the crystal grains by a procedure after capturing an image of a cross section of the cover portion in the comparative example with a scanning electron microscope (SEM), Figure 6B is an image obtained by observing the crystal grains by a procedure after capturing an image of a cross section of the cover portion in the inventive example with a scanning electron microscope (SEM), and Figure 6C It is shown in Fig. 6A and Figure 6B Bar graph of the average size of the grains observed in .

[0151] exist Fig. 6A In the comparative example of , only tin (Sn) was added to the cover portion, and the average grain size was measured to be 166 nm.

[0152] exist Figure 6B In the example of the invention, the test sample is manufactured so that Fig. 6A In the comparative example, the same amount of tin (Sn) was added to the covering portion, and additional gallium (Ga) was added thereto at the same time, and a ratio (A / B) of the number of moles (A) of the main component of the gallium (Ga) included in the covering portion based on 100 moles of the base material to the number of moles (B) of the main component of the tin (Sn) included in the covering portion based on 100 moles of the base material satisfied 0.2≤A / B≤4.0, and the average grain size was measured to be 182 nm.

[0153] If available Figure 6C As seen in the figure, in which tin (Sn) and gallium (Ga) are added together Figure 6B In the case of the inventive example, the grain size is larger than that of the one in which only tin (Sn) is added. Fig. 6A The grain size of the comparative example was about 9.6%, thereby confirming that adding tin (Sn) and gallium (Ga) in appropriate amounts can induce grain growth.

[0154] Fig. 7A is an image obtained by observing the pores (P) after capturing an image of a cross section of the cover portion in the comparative example with a scanning electron microscope (SEM), and Figure 7B is an image obtained by observing the pores (P) after capturing an image of a cross section of the cover portion in the inventive example with a scanning electron microscope (SEM).

[0155] exist Fig. 7A In the comparative example of , only tin (Sn) is added to the cover portion.

[0156] exist Figure 7B In the example of the invention, the test sample is manufactured so that Fig. 7AIn the comparative example, the same amount of tin (Sn) as the amount of tin (Sn) added is added to the covering portion, and additional gallium (Ga) is added thereto at the same time, and a ratio (A / B) of the number of moles (A) of the main component of the gallium (Ga) included in the covering portion based on 100 moles of the base material to the number of moles (B) of the main component of the tin (Sn) included in the covering portion based on 100 moles of the base material satisfies 0.2≤A / B≤4.0.

[0157] Adding tin (Sn) and gallium (Ga) together Figure 7B In the case of the invention example, only tin (Sn) is added Fig. 7A Compared with the comparative example, when tin (Sn) and gallium (Ga) are added in appropriate amounts, the number of pores can be reduced and the porosity can be lowered.

[0158] Fig. 8A is a graph of the MTTF of a comparative example, and Figure 8B is a graph of the MTTF of the inventive example.

[0159] exist Fig. 8A In the comparative example of , a voltage of 9.45 V was applied to 20 sample pieces in which only tin (Sn) was added to the cover portion at a temperature of 125° C., and the MTTF was found to be 13 hours.

[0160] exist Figure 8B In the invention example in the invention, a voltage of 9.45V is applied to 20 samples at a temperature of 125°C. Fig. 8A The same amount of tin (Sn) as the amount of tin (Sn) added in the comparative example was added to the covering portion of the inventive example and additional gallium (Ga) was added thereto at the same time, and the ratio (A / B) of the number of moles (A) of the main component of the gallium (Ga) included in the covering portion based on 100 moles of the base material to the number of moles (B) of the main component of the tin (Sn) included in the covering portion based on 100 moles of the base material satisfied 0.2≤A / B≤4.0, and the MTTF was found to be 21 hours.

[0161] Fig.9A is a moisture-proof reliability evaluation curve diagram of a comparative example, and Fig. 9B It is a moisture-proof reliability evaluation curve diagram of the invention example.

[0162] exist Fig.9A In a comparative example of , a voltage of 9.45 V was applied to 20 sample pieces in which only tin (Sn) was added to the cover portion at a temperature of 85° C. and a relative humidity of 85% for 24 hours, and the number of sample pieces in which short circuits occurred was 14 among the 20 sample pieces.

[0163] exist Fig. 9BIn the example of the invention, a voltage of 9.45 V is applied to 20 samples at a temperature of 85° C. and a relative humidity of 85% for 24 hours. Fig.9A The same amount of tin (Sn) as the amount of tin (Sn) added in the comparative example was added to the covering portion of the inventive example and additional gallium (Ga) was added thereto at the same time, and a ratio (A / B) of the number of moles (A) of the main component of the gallium (Ga) included in the covering portion based on 100 moles of the base material to the number of moles (B) of the main component of the tin (Sn) included in the covering portion based on 100 moles of the base material satisfied 0.2≤A / B≤4.0, and no short circuit occurred among the 20 sample pieces.

[0164] Although the exemplary embodiments of the present disclosure have been described in detail above, the present disclosure is not limited to the above embodiments and drawings, but is defined by the appended claims. Therefore, those of ordinary skill in the art may make various substitutions, modifications or alterations without departing from the scope of the present disclosure defined by the appended claims, and these substitutions, modifications or alterations should be interpreted as being included within the scope of the present disclosure.

[0165] In addition, the expression "exemplary embodiment" used in the present disclosure does not mean the same embodiment, and is provided to emphasize and explain different unique characteristics. However, the embodiment presented above does not exclude the combination of features with another embodiment. For example, although a matter described in a specific embodiment is not described in another embodiment, unless there is a description opposite or contradictory to the matter in another embodiment, the matter may also be understood as a description related to another embodiment.

[0166] In the present disclosure, the terms are only used to describe specific embodiments and are not intended to limit the present disclosure. Unless the context clearly indicates otherwise, a singular form may also include a plural form.

Claims

1. A multilayer electronic component comprising: a main body including a capacitance forming part and a covering part, the capacitance forming part including a dielectric layer and inner electrodes arranged alternately with the dielectric layer in a first direction, the covering part being arranged on both surfaces of the capacitance forming part in the first direction; and an outer electrode, disposed on the body, wherein the covering portion includes Ba, Ga and Sn, and A ratio A / B of a mole number A of Ga included in the cover portion based on 100 moles of Ba to a mole number B of Sn included in the cover portion based on 100 moles of Ba satisfies 0.2≤A / B≤4.

0.

2. The multilayer electronic component according to claim 1, wherein The mole number A of Ga included in the covering portion is greater than or equal to 0.3 mol and less than or equal to 6.0 mol based on 100 mol of Ba.

3. The multilayer electronic component according to claim 1, wherein: The mole number B of Sn included in the covering portion is greater than or equal to 0.1 mol and less than or equal to 3.0 mol based on 100 mol of Ba.

4. The multilayer electronic component according to claim 1, wherein: The dielectric layer does not include Ga.

5. The multilayer electronic component according to claim 1, wherein The composition of the dielectric layer included in the capacitance forming portion is different from the composition of the dielectric layer included in the covering portion.

6. The multilayer electronic component according to claim 1, wherein: An average size of the plurality of crystal grains included in the cover portion is greater than or equal to 170 nm and less than or equal to 200 nm.

7. The multilayer electronic component according to claim 6, wherein: A ratio STD / AVG of a size standard deviation STD of the plurality of grains included in the cover portion to an average size AVG of the plurality of grains included in the cover portion is referred to as a coefficient of variation CV, and a percentage of the coefficient of variation CV is greater than or equal to 50% and less than or equal to 60%.

8. The multilayer electronic component according to claim 1, wherein A Ga content in the capping portion is greater than a Ga content in the dielectric layer.

9. A multilayer electronic component comprising: a main body including a capacitance forming part and a covering part, the capacitance forming part including a dielectric layer and inner electrodes arranged alternately with the dielectric layer in a first direction, the covering part being arranged on both surfaces of the capacitance forming part in the first direction; and an outer electrode, disposed on the body, wherein the covering portion comprises Ti, Ga and Sn, and The number of moles A of Ga included in the covering portion is greater than or equal to 0.3 mol and less than or equal to 6.0 mol based on 100 mol of Ti.

10. The multilayer electronic component according to claim 9, wherein The mole number B of Sn included in the covering portion is greater than or equal to 0.1 mol and less than or equal to 3.0 mol based on 100 mol of Ti.

11. The multilayer electronic component according to claim 9, wherein A ratio A / B of a mole number A of Ga included in the cover portion based on 100 moles of Ti to a mole number B of Sn included in the cover portion based on 100 moles of Ti satisfies 0.2≤A / B≤4.

0.

12. The multilayer electronic component according to claim 9, wherein The dielectric layer does not include Ga.

13. The multilayer electronic component according to claim 9, wherein: The composition of the dielectric layer included in the capacitance forming portion is different from the composition of the dielectric layer included in the covering portion.

14. The multilayer electronic component according to claim 9, wherein: An average size of the plurality of crystal grains included in the cover portion is greater than or equal to 170 nm and less than or equal to 200 nm.

15. The multilayer electronic component according to claim 14, wherein A ratio STD / AVG of a size standard deviation STD of the plurality of grains included in the cover portion to an average size AVG of the plurality of grains included in the cover portion is referred to as a coefficient of variation CV, and a percentage of the coefficient of variation CV is greater than or equal to 50% and less than or equal to 60%.

16. The multilayer electronic component according to claim 9, wherein A Ga content in the capping portion is greater than a Ga content in the dielectric layer.

17. The multilayer electronic component according to claim 9, wherein: The dielectric layer disposed in the central portion of the capacitance forming portion does not include Ga.

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