Multilayer electronic component

Abstract

The present disclosure provides a multilayer electronic component. The multilayer electronic component includes: a main body including a capacitance forming portion including a dielectric layer and an internal electrode, and a cover portion disposed on both surfaces of the capacitance forming portion in a first direction, the main body comprises a first surface and a second surface which are opposite to each other in a first direction, a third surface and a fourth surface which are opposite to each other in a second direction, and a fifth surface and a sixth surface which are opposite to each other in a third direction; an external electrode disposed on the third surface and the fourth surface; and a side edge portion disposed on the fifth surface and the sixth surface, and the cover portion and the side edge portion include titanium (Ti) and gallium (Ga), and a ratio (B / A) of a number of moles (B) of gallium (Ga) based on 100 moles of titanium (Ti) included in the side edge portion to a number of moles (A) of gallium (Ga) based on 100 moles of titanium (Ti) included in the cover portion satisfies 1.5 < = B / A.

Description

[0001] This application claims the benefit of priority from Korean Patent Application No. 10-2023-0158445 filed in the Korean Intellectual Property Office on November 15, 2023, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0002] The present disclosure relates to a multi-layer electronic assembly. Background Art

[0003] Multilayer ceramic capacitors (MLCC, a type of multilayer electronic component) are chip capacitors that are mounted on printed circuit boards of various types of electronic products, such as image display devices including liquid crystal displays (LCDs) or plasma display panels (PDPs), computers, smart phones, and mobile phones, and are used to charge or discharge the same.

[0004] Multilayer ceramic capacitors are used as components in various electronic devices because they have a small size, ensure high capacitance, and are easy to mount. As various electronic devices such as computers and mobile devices are miniaturized and achieve high output power, the demand for miniaturization and high capacitance of multilayer ceramic capacitors is also increasing.

[0005] As miniaturization and higher capacitance progress, the need to protect the capacitance forming area increases, and therefore, the capacitance forming area is protected by increasing the edge area around the capacitance forming area. However, as the structural design continues to change to achieve miniaturization and high capacitance, the capacitance forming area may be increased and the edge area protecting the capacitance forming area may be reduced, and therefore, there may be a risk that the moisture resistance reliability and strength of the multilayer ceramic capacitor may be reduced. Summary of the invention

[0006] An aspect of the present disclosure is to provide a multilayer electronic component having improved moisture resistance reliability.

[0007] An aspect of the present disclosure is to provide a multilayer electronic assembly with improved mechanical properties.

[0008] However, aspects of the present disclosure are not limited to the above and may be more easily understood in describing specific example embodiments of the present disclosure.

[0009] A multilayer electronic component according to an example embodiment of the present disclosure may include: a body including a capacitance forming portion and a covering portion, the capacitance forming portion including a dielectric layer and internal electrodes alternately arranged with the dielectric layer in a first direction, the covering portion being arranged on two surfaces of the capacitance forming portion in the first direction, the body including a first surface and a second surface opposite to each other in the first direction, a third surface and a fourth surface connected to the first surface and the second surface and opposite to each other in the second direction, and a fifth surface and a sixth surface connected to the first surface to the fourth surface and opposite to each other in a third direction; an external electrode arranged on the third surface and the fourth surface; and a side edge portion arranged on the fifth surface and the sixth surface, the covering portion and the side edge portion may include titanium (Ti) and gallium (Ga), and a ratio (B / A) of the number of moles (B) of gallium (Ga) based on 100 moles of titanium (Ti) included in the side edge portion to the number of moles (A) of gallium (Ga) based on 100 moles of titanium (Ti) included in the covering portion may satisfy 1.5≤B / A.

[0010] One of the various effects of the present disclosure is to improve the moisture resistance reliability of a multilayer electronic component.

[0011] One of the various effects of the present disclosure is to improve the mechanical properties of multilayer electronic components.

[0012] However, the advantages and effects of the present application are not limited to the foregoing and may be more easily understood in the course of describing specific exemplary embodiments of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] The above and other aspects, features and advantages of the present disclosure will be more clearly understood through the following detailed description in conjunction with the accompanying drawings, in which: Figure 1 is a perspective view schematically illustrating a multilayer electronic component according to an example embodiment of the present disclosure; Figure 2 Schematically shows Figure 1 A perspective view of the multilayer electronic component shown in excluding external electrodes; Figure 3 Schematically shows Figure 1 A perspective view of the multilayer electronic component shown in excluding the external electrodes and the side edge portions; Figure 4 schematically shows an exploded perspective view showing a stacked structure of inner electrodes; Figure 5 is along Figure 1 A schematic cross-sectional view taken along line II' in FIG. Figure 6 is along Figure 1A schematic cross-sectional view taken along line II-II' in FIG. Fig. 7A and Figure 7B In the comparative example, a scanning electron microscope (SEM) was used to photograph Figure 6 The images obtained by the region M1 and the region M2 are Figure 7C and Fig.7D The sample was photographed using a scanning electron microscope (SEM). Figure 6 An image obtained by combining the regions M1 and M2 in FIG. Fig. 8A is an image of a cross section of the cover portion of the comparative example taken in high angle annular dark field (HAADF) mode of a scanning electron microscope (SEM), Figure 8B is through Fig. 8A An image obtained by performing EDS analysis in a region to map the aluminum (Al) element, and Figure 8C is through Fig. 8A An image obtained by performing EDS analysis in an area to map the silicon (Si) element; Fig.9A This is an image of a cross section of a cover portion of an example taken in the HAADF mode of a scanning electron microscope (SEM). Fig. 9B is through Fig.9A The image obtained by EDS analysis in the area to map the aluminum (Al) element, Fig. 9C is through Fig.9A The image was obtained by performing EDS analysis in the area to map the silicon (Si) element. Fig.9D is through Fig.9A Image obtained by performing EDS analysis in a region to map the gallium (Ga) element; Fig. 10A This is an image of a cross section of the side edge portion of the comparative example taken in the HAADF mode of a scanning electron microscope (SEM). Fig. 10B is through Fig. 10A An image obtained by performing EDS analysis in a region to map the aluminum (Al) element, and Fig. 10C is through Fig. 10A An image obtained by performing EDS analysis in an area to map the silicon (Si) element; Fig.11A This is an image of a cross section of the side edge portion of the example taken in the HAADF mode of a scanning electron microscope (SEM). Fig. 11B is through Fig.11A The image obtained by EDS analysis in the area to map the aluminum (Al) element, Fig. 11C is through Fig.11A The image was obtained by performing EDS analysis in the area to map the silicon (Si) element. Fig.11D is through Fig.11A Image obtained by performing EDS analysis in a region to map the gallium (Ga) element; Fig. 12A and Fig. 12B is a graph for evaluating the moisture resistance reliability of the comparative example. Fig. 12C and Fig.12D is an example of a moisture resistance reliability evaluation curve graph; Fig.13 is a graph showing the grain microstructure size of Comparative Example (a) and Example (b). DETAILED DESCRIPTION

[0014] Hereinafter, the example embodiments of the present disclosure will be described with reference to specific example embodiments and the accompanying drawings. However, the example embodiments of the present disclosure may be illustrated in many different forms and should not be construed as being limited to the specific embodiments set forth herein. The example embodiments disclosed herein are provided to better explain the present disclosure to those skilled in the art. Therefore, in the accompanying drawings, for the sake of clarity, the shapes and sizes of the elements may be exaggerated, and the same reference numerals will always be used to represent the same or similar elements.

[0015] In addition, in order to clearly describe the present disclosure in the drawings, contents irrelevant to the description are omitted, and since the size and thickness of each component shown in the drawings are arbitrarily shown for the convenience of description, the present disclosure is not limited thereto. In addition, the same reference numerals are used to describe components having the same functions within the same conceptual scope. Throughout the specification, unless otherwise specified, when a part "includes" or "contains" a component, this means that other components are not excluded and other components may be further included.

[0016] In the drawings, a first direction may be defined as a thickness direction, a second direction may be defined as a length direction, and a third direction may be defined as a width direction.

[0017] Multilayer electronic components Figure 1 is a perspective view schematically illustrating a multilayer electronic component according to an example embodiment of the present disclosure.

[0018] Figure 2 Schematically shows the Figure 1 The multilayer electronic component shown in FIG. 1 does not include a perspective view of the external electrodes.

[0019] Figure 3 Schematically shows the Figure 1 1 is a perspective view showing a multilayer electronic component excluding external electrodes and side edge portions.

[0020] Figure 4An exploded perspective view showing a stacked structure of inner electrodes is schematically shown.

[0021] Figure 5 is along Figure 1 Schematic cross-sectional view taken along line II' in FIG.

[0022] Figure 6 is along Figure 1 Schematic cross-sectional view taken along line II-II'.

[0023] In the following, reference will be made to Figures 1 to 6 A multilayer electronic component according to an exemplary embodiment of the present disclosure is described in detail. A multilayer ceramic capacitor will be described as an example of a multilayer electronic component, but the multilayer electronic component of the present disclosure can also be applied to various electronic products (such as an inductor, a piezoelectric element, a varistor, or a thermistor) using a dielectric composition.

[0024] A multilayer electronic component 100 according to an exemplary embodiment of the present disclosure may include a body 110 including a capacitor forming portion Ac and cover portions 112 and 113, the capacitor forming portion Ac including a dielectric layer 111 and internal electrodes 121 and 122 alternately arranged with the dielectric layer 111 in a first direction, the cover portions 112 and 113 being arranged on both surfaces of the capacitor forming portion Ac in the first direction, and the body 110 including a first surface 1 and a second surface 2 opposite to each other in the first direction, a third surface 3 and a fourth surface 4 connected to the first surface 1, the second surface 2, and the third surface 4 opposite to each other in the second direction, and a conductive layer 121 and a conductive layer 122 connected to the first surface 1, the second surface 2, and the third surface 4. 3 and the fourth surface 4 and a fifth surface 5 and a sixth surface 6 opposite to each other in the third direction; external electrodes are provided on the third surface 3 and the fourth surface 4; and side edge portions 114 and 115 are provided on the fifth surface 5 and the sixth surface 6, and the cover portions 112 and 113 and the side edge portions 114 and 115 include titanium (Ti) and gallium (Ga), and a ratio (B / A) of the number of moles (B) of gallium (Ga) based on 100 moles of titanium (Ti) included in the side edge portions 114 and 115 to the number of moles (A) of gallium (Ga) based on 100 moles of titanium (Ti) included in the cover portions 112 and 113 may satisfy 1.5≤B / A.

[0025] The body 110 may include dielectric layers 111 and internal electrodes 121 and 122 that are alternately stacked.

[0026] More specifically, the body 110 may include a capacitor forming portion Ac, which is disposed inside the body 110 and includes first and second internal electrodes 121 and 122 alternately arranged to face each other with a dielectric layer 111 interposed between the first and second internal electrodes 121 and 122 to form a capacitor.

[0027] There is no particular limitation on the specific shape of the main body 110, but as shown in Figures 1 to 3 , the main body 110 may have a hexahedral shape or a shape similar to a hexahedron. Due to the shrinkage of the ceramic powder particles included in the main body 110 during the sintering process, the main body 110 may not have a hexahedral shape with completely straight lines, but may generally have a hexahedral shape.

[0028] The main body 110 may have a first surface 1 and a second surface 2 that face each other in a first direction, a third surface 3 and a fourth surface 4 that are connected to the first surface 1 and the second surface 2 and face each other in a second direction, and a fifth surface 5 and a sixth surface 6 that are connected to the first surface 1, the second surface 2, the third surface 3, and the fourth surface 4 and face each other in a third direction.

[0029] In a state where a plurality of dielectric layers 111 included in the main body 110 are sintered, adjacent dielectric layers 111 may be integrated, making it difficult to identify the boundary between adjacent dielectric layers 111 without using a scanning electron microscope (SEM).

[0030] The material included in the dielectric layer 111 is not limited as long as sufficient electrostatic capacitance can be obtained therefrom. Generally, perovskite (ABO3)-based materials can be used. For example, barium titanate-based materials, lead composite perovskite-based materials, or strontium titanate-based materials can be used. The barium titanate-based material may include BaTiO3-based ceramic particles, and examples of the BaTiO3-based ceramic particles may include BaTiO3 and (Ba 1-x Ca x )TiO3 (0 < x < 1), Ba(Ti 1-y Ca y )O3 (0 < y < 1), (Ba 1-x Ca x )(Ti 1-y Zr y )O3 (0 < x < 1, 0 < y < 1), or Ba(Ti 1-y Zr y )O3 (0 < y < 1).

[0031] In addition, various ceramic additives, organic solvents, binders, dispersants, etc. can be added to particles such as barium titanate (BaTiO3) as the material included in the dielectric layer 111 according to the purpose of the present disclosure.

[0032] In addition, the dielectric layer 111 may be formed using a dielectric material such as barium titanate (BaTiO3), and thus may include a dielectric microstructure after sintering. The dielectric microstructure may include a plurality of grains, grain boundaries disposed between adjacent grains, and a triple point disposed at a point where three or more grain boundaries contact each other, and each of the grains, grain boundaries, and triple points may include a plurality. The grains, grain boundaries, and triple points may be observed by a scanning electron microscope (SEM). Even if not described in the present disclosure, other methods and / or tools understood by a person of ordinary skill in the art may be used.

[0033] In the present disclosure, in order to identify the dielectric layers included in the covering portions 112 and 113 and the side edge portions 114 and 115 (which will be described below), the dielectric layer 111 included in the capacitance forming portion Ac may be defined as a first dielectric layer 111, the dielectric layer included in the covering portions 112 and 113 may be defined as a second dielectric layer, and the dielectric layer included in the side edge portions 114 and 115 may be defined as a third dielectric layer.

[0034] In an example embodiment of the present disclosure, the dielectric layer 111 of the capacitance forming part Ac may not include gallium (Ga).

[0035] Here, the fact that the dielectric layer 111 of the capacitance forming portion Ac does not include gallium (Ga) may mean that the dielectric slurry or the dielectric green sheet does not include gallium (Ga) before sintering the dielectric layer 111 and / or may mean that the dielectric layer 111 disposed in the central region of the capacitance forming portion Ac does not include gallium (Ga).

[0036] That is, when gallium (Ga) included in the covering portions 112 and 113 and / or the side edge portions 114 and 115 to be described below undergoes a sintering process such as high-temperature heat treatment, gallium (Ga) may diffuse into the dielectric layer 111 of the capacitor forming portion Ac in an area adjacent to the covering portions 112 and 113 and / or the side edge portions 114 and 115, which may mean that the dielectric layer 111 disposed in the central portion of the capacitor forming portion Ac does not include gallium (Ga).

[0037] For example, based on a cross section in the first direction and the second direction taken at the center of the third direction of the body 110, when a 10 μm×10 μm area set in the central part of the first direction and the second direction is observed in an energy dispersive X-ray spectrometer (EDS) mode of a scanning electron microscope (SEM), gallium (Ga) is not detected, or the amount of gallium (Ga) detected is less than 0.1 at %.

[0038] The thickness td of the dielectric layer 111 is not limited.

[0039] However, in order to achieve high capacitance of the multilayer electronic component, the thickness of the dielectric layer 111 may be 3.0 μm or less, and in order to more easily achieve miniaturization and high capacitance, the thickness of the dielectric layer 111 may be 1.0 μm or less, preferably 0.6 μm or less, and more preferably 0.4 μm or less.

[0040] Here, the thickness td of the dielectric layer 111 may refer to a thickness td of the dielectric layer 111 disposed between the first and second internal electrodes 121 and 122 .

[0041] In addition, the thickness td of the dielectric layer 111 may refer to the first direction dimension of the dielectric layer 111. In addition, the thickness td of the dielectric layer 111 may refer to the average thickness td of the dielectric layer 111, and may refer to the average dimension of the dielectric layer 111 in the first direction.

[0042] The average size of the dielectric layer 111 in the first direction can be measured by scanning an image of a cross section of the body 110 in the first direction and the second direction with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, the average size of one dielectric layer 111 in the first direction can be an average value calculated by measuring the first-direction size of one dielectric layer 111 at 30 points spaced apart from each other at equal intervals in the second direction in the scanned image. The 30 points spaced apart from each other at equal intervals can be specified in the capacitor forming portion Ac. In addition, when the average value is measured by extending the average value measurement to 10 dielectric layers 111, the average thickness of the dielectric layer 111 in the first direction can be further generalized.

[0043] The internal electrodes 121 and 122 may be alternately stacked with the dielectric layers 111 .

[0044] The internal electrodes 121 and 122 may include a first internal electrode 121 and a second internal electrode 122, and the first internal electrode 121 and the second internal electrode 122 may be alternately arranged to face each other, and the dielectric layer 111 is interposed between the first internal electrode 121 and the second internal electrode 122, and the first internal electrode 121 and the second internal electrode 122 may be exposed to the third surface 3 and the fourth surface 4 of the body 110, respectively.

[0045] More specifically, the first inner electrode 121 may be spaced apart from the fourth surface 4 and may be exposed through the third surface 3, and the second inner electrode 122 may be spaced apart from the third surface 3 and may be exposed through the fourth surface 4. The first outer electrode 131 may be disposed on the third surface 3 of the body 110 and may be connected to the first inner electrode 121, and the second outer electrode 132 may be disposed on the fourth surface 4 of the body 110 and may be connected to the second inner electrode 122.

[0046] That is, the first internal electrode 121 may be connected to the first external electrode 131 without being connected to the second external electrode 132, and the second internal electrode 122 may be connected to the second external electrode 132 without being connected to the first external electrode 131. In this case, the first internal electrode 121 and the second internal electrode 122 may be electrically separated from each other by the dielectric layer 111 disposed therebetween.

[0047] In addition, the body 110 may be formed by alternately stacking ceramic green sheets on which the conductive paste for the first internal electrode 121 is printed and ceramic green sheets on which the conductive paste for the second internal electrode 122 is printed, and then sintering the ceramic green sheets.

[0048] The material included in the internal electrodes 121 and 122 is not particularly limited, and any material having excellent conductivity may be used. For example, the internal electrodes 121 and 122 may include one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0049] In addition, the internal electrodes 121 and 122 may be formed by printing a conductive paste for internal electrodes including one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof on a ceramic green sheet. The printing method of the conductive paste for internal electrodes may be a screen printing method or a gravure printing method, but the present disclosure is not limited thereto.

[0050] In addition, the thickness te of the internal electrodes 121 and 122 is not limited.

[0051] However, to achieve high capacitance of the multilayer electronic component, the thickness of the internal electrodes 121 and 122 may be 1.0 μm or less, and to more easily achieve miniaturization and high capacitance, the thickness of the internal electrodes 121 and 122 may be 0.6 μm or less, and more preferably 0.4 μm or less.

[0052] Here, the thickness te of the internal electrodes 121 and 122 may refer to the first direction size of the internal electrodes 121 and 122. In addition, the thickness te of the internal electrodes 121 and 122 may refer to the average thickness te of the internal electrodes 121 and 122 and may refer to the average size of the internal electrodes 121 and 122 in the first direction.

[0053] The average size of the internal electrodes 121 and 122 in the first direction can be measured by scanning an image of a cross section of the body 110 in the first direction and the second direction with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, the average size of one internal electrode in the first direction can be an average value calculated by measuring the first direction size of one internal electrode at 30 points spaced apart from each other at equal intervals in the second direction in the scanned image. The 30 points spaced apart from each other at equal intervals can be specified in the capacitor forming portion Ac. In addition, when the average value is measured by extending the average value measurement to 10 internal electrodes 121 and 122, the average thickness of the internal electrodes 121 and 122 in the first direction can be further generalized.

[0054] In addition, in the example embodiment of the present disclosure, an average thickness td of at least one of the plurality of dielectric layers 111 and an average thickness te of at least one of the plurality of internal electrodes 121 and 122 may satisfy 2×te <td。

[0055] In other words, the average thickness td of one dielectric layer 111 may be greater than twice the average thickness te of one internal electrode 121 or 122. Preferably, the average thickness td of the plurality of dielectric layers 111 may be greater than twice the average thickness te of the plurality of internal electrodes 121 and 122.

[0056] Generally, the main problem of high voltage electronic components is the reliability problem caused by the decrease of breakdown voltage (BDV) in high voltage environment.

[0057] Therefore, in order to prevent a decrease in breakdown voltage under a high voltage environment, the average thickness td of the dielectric layer 111 may be formed to be greater than twice the average thickness te of the internal electrodes 121 and 122 so that the thickness of the dielectric layer as the distance between the internal electrodes may be increased, thereby improving the breakdown voltage (BDV) characteristics.

[0058] When the average thickness td of the dielectric layer 111 is less than or equal to twice the average thickness te of the internal electrodes 121 and 122 , the average thickness of the dielectric layer as a distance between the internal electrodes may be thinner, which may reduce a breakdown voltage and a short circuit may occur between the internal electrodes.

[0059] In the high voltage electronic component, the average thickness te of the internal electrodes may be 1 μm or less, and the average thickness td of the dielectric layer may be 3.0 μm or less, but the present disclosure is not necessarily limited thereto.

[0060] In addition, the body 110 may include cover parts 112 and 113 disposed on both surfaces of the capacitance forming part Ac in the first direction.

[0061] Specifically, the main body 110 may include a first covering portion 112 arranged on one surface of the capacitor forming portion Ac in the first direction and a second covering portion 113 arranged on another surface of the capacitor forming portion Ac in the first direction, and more specifically, the main body 110 may include a first covering portion 112 arranged above the capacitor forming portion Ac in the first direction and a second covering portion 113 arranged below the capacitor forming portion Ac in the first direction.

[0062] The first covering portion 112 and the second covering portion 113 may be formed by stacking a single dielectric layer or two or more dielectric layers on the upper and lower surfaces of the capacitor forming portion Ac in the first direction, respectively, and may be mainly used to prevent damage to the internal electrodes 121 and 122 due to physical stress or chemical stress.

[0063] The first and second covers 112 and 113 do not include the internal electrodes 121 and 122 and may include the same dielectric material as the first dielectric layer 111. That is, the first and second covers 112 and 113 may include a ceramic material and may include, for example, a barium titanate (BaTiO3)-based ceramic material.

[0064] However, the composition of the second dielectric layer may be different from that of the first dielectric layer 111. For example, the second dielectric layer may include gallium (Ga).

[0065] That is, the cover parts 112 and 113 may include gallium (Ga).

[0066] Since the cover parts 112 and 113 include gallium (Ga), the number of pores P can be reduced by lowering the sintering temperature, so that the compactness of the cover parts 112 and 113 can be improved, thereby improving moisture resistance reliability. In addition, even when the cover parts 112 and 113 are subjected to external impact, the generation of cracks can be suppressed, thereby improving mechanical properties.

[0067] In addition, the second dielectric layer may be formed using a dielectric material such as barium titanate (BaTiO3), and thus may include a dielectric microstructure after sintering. The dielectric microstructure may include a plurality of grains, grain boundaries disposed between adjacent grains, and a triple point disposed at a point where three or more grain boundaries contact each other, and each of the grains, grain boundaries, and triple points may include a plurality.

[0068] In addition, the thickness tc of the covering portions 112 and 113 is not limited.

[0069] However, to more easily achieve miniaturization and high capacitance of multilayer electronic components, the thickness tc of covers 112 and 113 may be 100 μm or less, preferably 30 μm or less, and in ultra-small products, more preferably 20 μm or less.

[0070] Here, the thickness tc of the covering parts 112 and 113 may refer to the first direction dimension of the covering parts 112 and 113 in the first direction. In addition, the thickness tc of the covering parts 112 and 113 may refer to the average thickness tc of the covering parts 112 and 113, and may refer to the average dimension of the covering parts 112 and 113 in the first direction.

[0071] The average size of the covering portions 112 and 113 in the first direction may be measured by scanning an image of a cross section in the first direction and the second direction of the body 110 with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, the average size of the covering portions 112 and 113 in the first direction may refer to an average value calculated by measuring the first direction size at 30 points equally spaced from each other in the second direction in an image obtained by scanning one covering portion.

[0072] In addition, the average size of the covering portion in the first direction measured by the above method may have substantially the same size as the average size of the covering portion in the first direction in the cross-section of the body 110 in the first and third directions.

[0073] In addition, the multilayer electronic component 100 may include side edge parts 114 and 115 disposed on both surfaces of the third direction of the body 110 .

[0074] More specifically, the side edge portions 114 and 115 may include a first side edge portion 114 disposed on the fifth surface 5 of the body 110 and a second side edge portion 115 disposed on the sixth surface 6 of the body 110. That is, the side edge portions 114 and 115 may be disposed on both side surfaces of the body 110 in the third direction.

[0075] like Figure 6 As shown in FIG. 1 , the side edge portions 114 and 115 may refer to regions between both ends of the first and second internal electrodes 121 and 122 in the third direction and the outer surface of the multilayer electronic component 100 based on the cross-sections of the multilayer electronic component 100 in the first and third directions.

[0076] The side margin parts 114 and 115 may mainly serve to prevent damage to the internal electrodes 121 and 122 due to physical stress or chemical stress.

[0077] The side margin portions 114 and 115 may be formed by not coating the conductive paste on the areas of the ceramic green sheet except for the areas where the internal electrodes 121 and 122 are to be formed. In addition, in order to suppress the step difference caused by the internal electrodes 121 and 122, the side margin portions 114 and 115 may be formed by cutting the stacked body so that the internal electrodes 121 and 122 are exposed to the fifth surface 5 and the sixth surface 6 of the body 110, and then stacking a single third dielectric layer or two or more third dielectric layers on the fifth surface 5 and the sixth surface 6 of the body 110.

[0078] The first and second side margin portions 114 and 115 do not include the internal electrodes 121 and 122 and may include the same dielectric material as the first dielectric layer 111. That is, the first and second side margin portions 114 and 115 may include a ceramic material, such as a barium titanate (BaTiO3)-based ceramic material.

[0079] However, the composition of the third dielectric layer may be different from that of the first dielectric layer 111. For example, the third dielectric layer may include gallium (Ga). That is, the composition of the first dielectric layer 111 may be different from that of at least one of the second dielectric layer and the third dielectric layer.

[0080] That is, the side margin parts 114 and 115 may include gallium (Ga).

[0081] Since the side margins 114 and 115 include gallium (Ga), the number of pores P can be reduced by lowering the sintering temperature, so that the compactness of the side margins 114 and 115 can be improved, thereby improving moisture resistance reliability. In addition, even when the side margins 114 and 115 are subjected to external impact, the generation of cracks can be suppressed, thereby improving mechanical properties.

[0082] In addition, the third dielectric layer may be formed using a dielectric material such as barium titanate (BaTiO3), and may include a dielectric microstructure after sintering. The dielectric microstructure may include a plurality of crystal grains, grain boundaries disposed between adjacent crystal grains, and a triple point disposed at a point where three or more grain boundaries contact each other, and each of the crystal grains, the grain boundaries, and the triple point may include a plurality.

[0083] In addition, the width wm of the first side margin portion 114 and the second side margin portion 115 is not limited.

[0084] However, to more easily achieve miniaturization and high capacitance of the multilayer electronic component 100 , the width wm of the side margin portions 114 and 115 may be 100 μm or less, preferably 30 μm or less, and in ultra-small products, more preferably 20 μm or less.

[0085] Here, the width wm of the side margin portions 114 and 115 may refer to the third direction dimension of the side margin portions 114 and 115. In addition, the width wm of the side margin portions 114 and 115 may refer to the average width wm of the side margin portions 114 and 115 and may refer to the average dimension of the side margin portions 114 and 115 in the third direction.

[0086] The average size of the side edge portions 114 and 115 in the third direction may be measured by scanning an image of a cross section in the first direction and the third direction of the body 110 using a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, the average size of the side edge portions 114 and 115 in the third direction may refer to an average value calculated by measuring the third direction size at 10 points equally spaced from each other in the first direction in an image obtained by scanning one side edge portion.

[0087] Hereinafter, embodiments of the present invention will be described in more detail.

[0088] In an example embodiment of the present disclosure, a ratio (B / A) of the number of moles (B) of gallium (Ga) based on 100 moles of titanium (Ti) included in the side edge parts 114 and 115 to the number of moles (A) of gallium (Ga) based on 100 moles of titanium (Ti) included in the cover parts 112 and 113 may satisfy 1.5≤B / A.

[0089] Since the ratio (B / A) of the number of moles of gallium (Ga) based on 100 moles of titanium (Ti) included in the covering portions 112 and 113 and the side edge portions 114 and 115 satisfies 1.5≤B / A, the number of pores P can be reduced by lowering the sintering temperature of the covering portions 112 and 113 and the side edge portions 114 and 115, so that the compactness of the covering portions 112 and 113 and the side edge portions 114 and 115 can be improved, thereby improving moisture resistance reliability. In addition, even when the covering portions 112 and 113 and the side edge portions 114 and 115 are subjected to external impact, the formation of cracks can be suppressed, thereby improving mechanical properties.

[0090] In addition, since gallium (Ga) enables low temperature sintering, non-crystalline growth of grains can be suppressed to reduce the size of the grains and enable uniform growth, thereby improving the grain size distribution. Therefore, the number of pores P can be reduced, and the reduction of breakdown voltage (BDV) caused by electric field concentration can be improved.

[0091] On the other hand, in order to control the number of pores P, the upper limit value of the ratio (B / A) of gallium (Ga) included in the cover portions 112 and 113 and the side edge portions 114 and 115 is not particularly limited, but the ratio (B / A) may be 10.0 or less, in other words, the ratio (B / A) may satisfy B / A≤10.0.

[0092] When the ratio (B / A) of the number of moles of gallium (Ga) based on 100 moles of titanium (Ti) included in the covering portions 112 and 113 and the side edge portions 114 and 115 satisfies B / A < 1.5, the number of pores P may increase, deteriorating the moisture resistance reliability, and due to the reduction in mechanical strength, the inner electrodes 121 and 122 forming the capacitor may not be sufficiently protected.

[0093] In an exemplary embodiment of the present disclosure, the number of moles (A) of gallium (Ga) based on 100 moles of titanium (Ti) included in the covering portions 112 and 113 may be greater than 0 mole and less than or equal to 1.0 mole. In other words, 0 mole < A ≤ 1.0 mole may be satisfied.

[0094] Since the number of moles (A) of gallium (Ga) based on 100 moles of titanium (Ti) included in the covering portions 112 and 113 satisfies 0 mole < A ≤ 1.0 mole, the number of pores P can be reduced by lowering the sintering temperature of the covering portions 112 and 113, so that the densification of the covering portions 112 and 113 can be improved, thereby improving the moisture resistance reliability. In addition, even when the covering portions 112 and 113 are subjected to an external impact, the formation of cracks can be suppressed, thereby improving the mechanical properties.

[0095] On the other hand, when the number of moles (A) of gallium (Ga) based on 100 moles of titanium (Ti) included in the covering portions 112 and 113 is greater than 1.0 mole (1.0 mole < A), the excessive addition of gallium (Ga) may cause the generation of agglomerates, which may lead to a reduction in the breakdown voltage (BDV), or may excessively inhibit grain growth, which may cause side effects such as a reduction in densification and a reduction in mechanical strength.

[0096] In addition, the number of moles (B) of gallium (Ga) based on 100 moles of titanium (Ti) included in the side edge portions 114 and 115 may be greater than 0 mole and less than or equal to 1.0 mole. In other words, 0 mole < B ≤ 1.0 mole may be satisfied.

[0097] Since the number of moles (B) of gallium (Ga) based on 100 moles of titanium (Ti) included in the side edge portions 114 and 115 satisfies 0 mole < B ≤ 1.0 mole, the number of pores P can be reduced by lowering the sintering temperature of the side edge portions 114 and 115, so that the densification of the side edge portions 114 and 115 can be improved, thereby improving the moisture resistance reliability. In addition, even when the side edge portions 114 and 115 are subjected to an external impact, the formation of cracks can be suppressed, thereby improving the mechanical properties.

[0098] On the other hand, when the number of moles of gallium (Ga) based on 100 moles of titanium (Ti) included in the side edge portions 114 and 115 is greater than 1.0 mole (1.0 mole < B), the excessive addition of gallium (Ga) may cause the formation of aggregates, which may lead to a decrease in breakdown voltage (BDV), or may excessively inhibit grain growth, which may cause side effects such as a decrease in densification and a decrease in mechanical strength.

[0099] In an exemplary embodiment of the present disclosure, at least one of the covering portions 112 and 113 and the side edge portions 114 and 115 may include a second phase containing gallium (Ga), and in this case, the second phase may be disposed at the triple point of at least one of the covering portions 112 and 113 and the side edge portions 114 and 115.

[0100] Since the second phase included in the covering portions 112 and 113 contains gallium (Ga), the number of pores P in the covering portions 112 and 113 can be reduced and densification can be improved, thereby improving moisture resistance reliability, and the formation of cracks can be inhibited even when the covering portions 112 and 113 are subjected to external shocks, thereby improving mechanical properties.

[0101] In the present disclosure, the "second phase" may refer to particles or segregation regions having a composition different from that of the perovskite-based (ABO3) dielectric particles. Specifically, the atomic percentage (at%) of barium (Ba) in the second phase particles may be greater than 0 at% and less than or equal to 30.0 at%, the atomic percentage (at%) of titanium (Ti) in the second phase particles may be greater than 0 at% and less than or equal to 30.0 at%, the atomic percentage (at%) of silicon (Si) in the second phase particles may be greater than 0 at% and less than or equal to 15.0 at%, the atomic percentage (at%) of aluminum (Al) in the second phase particles may be greater than 0 at% and less than or equal to 15.0 at%, and the second phase may refer to particles that satisfy all of the atomic percentage (at%) conditions of barium (Ba), titanium (Ti), silicon (Si), and aluminum (Al).

[0102] In the present disclosure, as an example of a more specific method of measuring the content of an element in each component included in the multilayer electronic component 100, in the case of a destructive method, the component may be analyzed using an EDS mode of a scanning electron microscope (SEM), an EDS mode of a transmission electron microscope (TEM), or an EDS mode of a scanning transmission electron microscope (STEM). First, in a cross section of a sintered body or a sintered side edge portion, a thin-sectioned analysis sample is prepared in a region including a dielectric microstructure using a focused ion beam (FIB) device. Then, a damaged layer on the surface of the thin-sectioned analysis sample is removed using xenon (Xe) or argon (Ar) ion milling, and then, a qualitative / quantitative analysis is performed by mapping each component to be measured in an image obtained using SEM-EDS, TEM-EDS, or STEM-EDS. In this case, the qualitative / quantitative analysis graph of each component may be expressed in terms of mass percentage (wt%), atomic percentage (at%), or molar percentage (mol%) of each element.

[0103] By another method, the object can be crushed and a region including a dielectric microstructure can be selected, and in the region including the selected dielectric microstructure, a device such as an inductively coupled plasma spectrometer (ICP-OES) and an inductively coupled plasma mass spectrometer (ICP-MS) can be used to analyze the composition of the region including the dielectric microstructure. Even if not described in the present disclosure, other methods and / or tools understood by a person of ordinary skill in the art may also be used.

[0104] In addition, in the example embodiment of the present disclosure, the second phase included in the cover parts 112 and 113 may include glass, and may include, for example, silicon (Si)-based glass or aluminum (Al)-silicon (Si)-based glass.

[0105] Since the second phase included in the covering parts 112 and 113 includes glass, the second phase can be more easily formed due to the glass, and the second phase can also include elements other than gallium (Ga), for example, silicon (Si) and / or aluminum (Al), for example, rare earth elements such as dysprosium (Dy), or, for example, subcomponents such as magnesium (Mg) elements and tin (Sn) elements, which are not dissolved in the barium titanate (BaTiO3)-based dielectric material and can be included in the second phase.

[0106] In addition, the second phase included in the side edge portions 114 and 115 may include glass, and may include, for example, silicon (Si)-based glass or aluminum (Al)-silicon (Si)-based glass.

[0107] Since the second phase included in the side edge portions 114 and 115 includes glass, the second phase may be more easily formed due to the glass, and the second phase may also include elements other than gallium (Ga), for example, silicon (Si) and / or aluminum (Al), for example, rare earth elements such as dysprosium (Dy), or for example, tin (Sn) elements, which are not dissolved in the barium titanate (BaTiO3)-based dielectric material and may be included in the second phase.

[0108] In example embodiments of the present disclosure, grain boundaries included in the capping parts 112 and 113 may include gallium (Ga).

[0109] Since the grain boundaries of the covers 112 and 113 include gallium (Ga), the number of pores P can be reduced by lowering the sintering temperature, so that the compactness of the covers 112 and 113 can be improved, thereby improving moisture resistance reliability. In addition, even when the covers 112 and 113 are subjected to external impact, the formation of cracks can be suppressed, thereby improving mechanical properties.

[0110] In this case, the grain boundaries of the covering portions 112 and 113 may include a region where the atomic percentage (at%) of gallium (Ga) is greater than or equal to 2.0 at%, and an upper limit value of the atomic percentage (at%) of gallium (Ga) in the region is not particularly limited, but the atomic percentage (at%) of gallium (Ga) in the region may be, for example, less than or equal to 4.0 at%.

[0111] Since the grain boundaries of the covers 112 and 113 include regions where the atomic percentage (at%) of gallium (Ga) is greater than or equal to 2.0 at%, the number of pores P can be reduced by lowering the sintering temperature, so that the compactness of the covers 112 and 113 can be improved, thereby improving moisture resistance reliability. In addition, even when the covers 112 and 113 are subjected to external impact, the formation of cracks can be suppressed, thereby improving mechanical properties.

[0112] In addition, an average atomic percentage (at %) of gallium (Ga) included in the grain boundaries of the cover parts 112 and 113 may be greater than or equal to 0.5 at % and less than or equal to 2.0 at %.

[0113] Since the average atomic percentage (at%) of gallium (Ga) included in the grain boundaries of the covers 112 and 113 satisfies 0.5 at% or more and 2.0 at% or less, the number of pores P can be reduced by lowering the sintering temperature, so that the compactness of the covers 112 and 113 can be improved, thereby improving moisture resistance reliability. In addition, even when the covers 112 and 113 are subjected to external impact, the formation of cracks can be suppressed, thereby improving mechanical properties.

[0114] Here, there is no particular limitation on the method for measuring the atomic percentage (at%) of gallium (Ga) included in the grain boundaries of the covering portions 112 and 113, but the EDS analysis method may be used as described above. The EDS analysis position may be confirmed by measuring a point of the grain boundary, or may be obtained using a line profile in a direction perpendicular to the grain boundary, and the atomic percentage (at%) of gallium (Ga) may be confirmed from the measured line profile. Even if not described in the present disclosure, other methods and / or tools understood by a person of ordinary skill in the art may be used. The measured atomic percentage may be based on the total amount of atoms present in the analysis position. The average atomic percentage may be the average value of the atomic percentages measured at different points in the grain boundary.

[0115] Similarly, in the example embodiment of the present disclosure, the grain boundaries included in the side edge parts 114 and 115 may include gallium (Ga).

[0116] Since the grain boundaries of the side margins 114 and 115 include gallium (Ga), the number of pores P can be reduced by lowering the sintering temperature, so that the compactness of the side margins 114 and 115 can be improved, thereby improving moisture resistance reliability. In addition, even when the side margins 114 and 115 are subjected to external impact, the formation of cracks can be suppressed, thereby improving mechanical properties.

[0117] In this case, the grain boundaries of the side edge portions 114 and 115 may include a region where the atomic percentage (at%) of gallium (Ga) is greater than or equal to 2.0 at%, and the upper limit value of the atomic percentage (at%) of gallium (Ga) in the region is not particularly limited, but the atomic percentage (at%) of gallium (Ga) in the region may be, for example, less than or equal to 4.0 at%.

[0118] Since the grain boundaries of the side margins 114 and 115 include regions where the atomic percentage (at%) of gallium (Ga) is greater than or equal to 2.0 at%, the number of pores P can be reduced by lowering the sintering temperature, so that the compactness of the side margins 114 and 115 can be improved, thereby improving moisture resistance reliability. In addition, even when the side margins 114 and 115 are subjected to external impact, the formation of cracks can be suppressed, thereby improving mechanical properties.

[0119] In addition, an average atomic percentage (at %) of gallium (Ga) included in the grain boundaries of the side margin parts 114 and 115 may be greater than or equal to 0.5 at % and less than or equal to 2.0 at %.

[0120] Since the average atomic percentage (at%) of gallium (Ga) included in the grain boundaries of the side edge portions 114 and 115 satisfies 0.5 at% or more and 2.0 at% or less, the number of pores P can be reduced by lowering the sintering temperature, so that the compactness of the side edge portions 114 and 115 can be improved, thereby improving moisture resistance reliability. In addition, even when the side edge portions 114 and 115 are subjected to external impact, the formation of cracks can be suppressed, thereby improving mechanical properties.

[0121] Here, there is no particular limitation on the method of measuring the atomic percentage (at%) of gallium (Ga) included in the grain boundaries of the side edge portions 114 and 115, but the EDS analysis method may be used as described above. The EDS analysis position may be confirmed by measuring a point of the grain boundary, or may be obtained by measuring a line profile in a direction perpendicular to the grain boundary, and the atomic percentage (at%) of gallium (Ga) may be confirmed from the elements of the measured line profile.

[0122] In the exemplary embodiment of the present disclosure, in the cover parts 112 and 113 (eg, in the cross sections of the cover parts 112 and 113 in the first direction and the third direction), the 2 The number of pores P in the can be 0.30 or less, including in 1 μm 2 The number of pores P in the pores may preferably be 0.25 or less and include 1 μm 2 The number of pores P in may preferably be 0.21 or less.

[0123] The method of measuring the number of pores P is not particularly limited, but Figure 6 For example, based on the cross-sections of the multilayer electronic component 100 in the first direction and the third direction, after taking an image of the region M1 including the cross-section of the first cover 112 using a scanning electron microscope (SEM), a program capable of measuring the pores P may be used to measure, for example, 500 μm. 2 The number of pores P in the area of ​​1 μm can then be calculated. 2 The number of pores P in .

[0124] In addition, in the exemplary embodiment of the present disclosure, in the side edge portions 114 and 115 (eg, in the cross sections of the side edge portions 114 and 115 in the first direction and the third direction), the 2 The number of pores P in the may be 0.22 or less and included in 1 μm 2 The number of pores P in can be 0.21 or less.

[0125] The method of measuring the number of pores P is not particularly limited, but Figure 6For example, based on the cross sections of the multilayer electronic component 100 in the first direction and the third direction, after taking an image of the region M2 including the cross section of the second side margin portion 115 using a scanning electron microscope (SEM), the number of voids P may be measured using a program capable of measuring voids P. Even if not described in the present disclosure, other methods and / or tools understood by those of ordinary skill in the art may be used.

[0126] In the example embodiment of the present disclosure, a structure in which the multilayer electronic component 100 has two external electrodes 131 and 132 is described, but the number or shape of the external electrodes 131 and 132 may be changed according to the shapes of the internal electrodes 121 and 122 or other purposes.

[0127] The external electrodes 131 and 132 may be disposed on the body 110 , and may be connected to the internal electrodes 121 and 122 .

[0128] More specifically, the external electrodes 131 and 132 may be disposed on the third surface 3 and the fourth surface 4 of the body 110, respectively, and may include a first external electrode 131 and a second external electrode 132 respectively connected to the first internal electrode 121 and the second internal electrode 122. That is, the first external electrode 131 may be disposed on the third surface 3 of the body and may be connected to the first internal electrode 121, and the second external electrode 132 may be disposed on the fourth surface 4 of the body and may be connected to the second internal electrode 122.

[0129] In addition, the external electrodes 131 and 132 may be provided to extend to a portion of the first surface 1 and a portion of the second surface 2 of the body 110, and may also be provided to extend to a portion of the fifth surface 5 and a portion of the sixth surface 6 of the body 110. That is, the first external electrode 131 may be provided on the third surface 3 of the body 110 and extend to a portion of the first surface 1, a portion of the second surface 2, a portion of the fifth surface 5, and a portion of the sixth surface 6 of the body 110, and the second external electrode 132 may be provided on the fourth surface 4 of the body 110 and extend to a portion of the first surface 1, a portion of the second surface 2, a portion of the fifth surface 5, and a portion of the sixth surface 6 of the body 110.

[0130] In addition, the external electrodes 131 and 132 may be formed using any material such as metal as long as the material has conductivity, and a specific material may be determined in consideration of electrical characteristics, structural stability, etc., and may also have a multi-layer structure.

[0131] For example, the external electrodes 131 and 132 may include an electrode layer disposed on the body 110 and a plating layer disposed on the electrode layer.

[0132] For a more specific example of the electrode layer, the electrode layer may include first electrode layers 131a and 132a (eg, sintered electrodes including a first conductive metal and glass) and / or may include second electrode layers 131b and 132b (eg, resin-based electrodes including a second conductive metal and resin).

[0133] Here, the first conductive metal may refer to a conductive metal included in the first electrode layers 131a and 132a, and the second conductive metal may refer to a conductive metal included in the second electrode layers 131b and 132b. In this case, the first conductive metal and the second conductive metal may be the same as or different from each other, and when the first conductive metal and the second conductive metal each include a plurality of metal materials, at least one metal material in the first conductive metal and at least one metal material in the second conductive metal may be the same, but the present disclosure is not particularly limited thereto.

[0134] In addition, the electrode layers 131a, 132a, 131b and 132b may be formed by sequentially forming first electrode layers 131a and 132a and second electrode layers 131b and 132b on a main body, and may be formed by transferring a sheet including a conductive metal onto a main body, or may be formed by transferring a sheet including a conductive metal onto a sintered electrode.

[0135] A material having excellent conductivity may be used as the first conductive metal and the second conductive metal included in the electrode layers 131a, 132a, 131b, and 132b, for example, the first conductive metal and the second conductive metal may include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof, but the present disclosure is not particularly limited thereto.

[0136] In an exemplary embodiment of the present disclosure, the electrode layers 131a, 132a, 131b and 132b may have a double-layer structure including first electrode layers 131a and 132a and second electrode layers 131b and 132b, and thus, the external electrodes 131 and 132 may include first electrode layers 131a and 132a and second electrode layers 131b and 132b, the first electrode layers 131a and 132a including a first conductive metal and glass, and the second electrode layers 131b and 132b are disposed on the first electrode layers 131a and 132a and including a second conductive metal and resin.

[0137] The first electrode layers 131 a and 132 a may serve to improve adhesion to the body 110 by including glass, and the second electrode layers 131 b and 132 b may serve to improve bending strength by including resin.

[0138] The conductive metal used in the first electrode layers 131a and 132a is not particularly limited as long as the conductive metal is a material that can be electrically connected to the internal electrodes 121 and 122 to form a capacitor, and the conductive metal may include, for example, one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof. The first electrode layers 131a and 132a may be formed by coating a conductive paste prepared by adding glass frit to first conductive metal particles and then sintering the conductive paste.

[0139] The second conductive metal included in the second electrode layers 131 b and 132 b may serve to electrically connect to the first electrode layers 131 a and 132 a .

[0140] The conductive metal included in the second electrode layers 131 b and 132 b is not particularly limited as long as the conductive metal is a material that can be electrically connected to the electrode layers 131 a and 132 a, and the conductive metal may include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0141] The conductive metal included in the second electrode layers 131b and 132b may include one or more of spherical particles and flake particles. That is, the conductive metal may consist of only flake particles or only spherical particles, and may be a mixture of flake particles and spherical particles. Here, the spherical particles may include an incomplete spherical shape, for example, the spherical particles may include a shape in which the length ratio of the major axis to the minor axis (major axis / minor axis) is 1.45 or less. Flake particles may refer to particles having a flat and elongated shape, and the present disclosure is not particularly limited thereto, for example, the length ratio of the major axis to the minor axis of the flake particles (major axis / minor axis) may be 1.95 or greater. The lengths of the major axis and the minor axis of the spherical particles and the flake particles may be measured from an image obtained by scanning a cross section of the first direction and the second direction cut from the central portion of the multilayer electronic component in the third direction with a scanning electron microscope (SEM).

[0142] The resin included in the second electrode layers 131b and 132b may ensure bonding and function as a buffer. The resin included in the second electrode layers 131b and 132b may have bonding and buffering properties, and the resin is not particularly limited as long as the resin can be mixed with conductive metal particles to make a paste, and may include, for example, epoxy-based resin.

[0143] In addition, the second electrode layers 131b and 132b may include a plurality of second conductive metal particles, an intermetallic compound, and a resin. The intermetallic compound may be included to further improve electrical connectivity with the first electrode layers 131a and 132a. The intermetallic compound may be used to improve electrical connectivity by connecting a plurality of metal particles, and may be used to surround a plurality of metal particles and connect the metal particles to each other.

[0144] In this case, the intermetallic compound may include a metal having a melting point lower than the solidification temperature of the resin. That is, because the intermetallic compound includes a metal having a melting point lower than the solidification temperature of the resin, the metal having a melting point lower than the solidification temperature of the resin melts during the drying and solidification process, and forms the intermetallic compound by reacting with a portion of the high melting point (melting point higher than the solidification temperature of the resin) metal particles to surround another portion of the high melting point metal particles that do not participate in the reaction. In this case, the intermetallic compound may preferably include a low melting point metal of 300° C. or less.

[0145] For example, the intermetallic compound may include Sn, which has a melting point of 213° C. to 220° C. Sn melts during the drying and solidification process, and the molten Sn wets high melting point metal particles (such as Ag, Ni, or Cu) by capillary action and reacts with some of the Ag metal particles, Ni metal particles, and Cu metal particles to form an intermetallic compound (such as Ag3Sn, Ni3Sn4, Cu6Sn5, and Cu3Sn). Ag, Ni, or Cu that does not participate in the reaction remains in the form of metal particles.

[0146] Therefore, the plurality of second conductive metal particles may include one or more of Ag, Ni, and Cu, and the intermetallic compound may include one or more of Ag3Sn, Ni3Sn4, Cu6Sn5, and Cu3Sn.

[0147] The plating layers 131c and 132c may be used to improve mounting characteristics.

[0148] The type of the plating layers 131c and 132c is not particularly limited, and in the drawings, only single-layered plating layers 131c and 132c are shown, but the present disclosure is not limited thereto, and the plating layers 131c and 132c may be single-layered plating layers 131c and 132c including one or more of nickel (Ni), tin (Sn), palladium (Pd), and alloys thereof, or the plating layers 131c and 132c may be formed of a plurality of layers.

[0149] For a more specific example of the plating layers 131c and 132c, the plating layers 131c and 132c may be Ni plating layers or Sn plating layers, or may be in a form in which Ni plating layers and Sn plating layers are sequentially formed on the electrode layer, or may be in a form in which Sn plating layers, Ni plating layers, and Sn plating layers are sequentially formed. In addition, the plating layers 131c and 132c may include a plurality of Ni plating layers and / or a plurality of Sn plating layers.

[0150] The size of the multilayer electronic component 100 does not need to be particularly limited.

[0151] However, in order to achieve both miniaturization and high capacitance, the thickness of the dielectric layer and the internal electrode must be thinned to increase the number of stacked layers, and therefore, the effect according to the present disclosure may be more pronounced in a multilayer electronic component 100 having a size of 1005 (length×width: 1.0 mm×0.5 mm) or less.

[0152] Hereinafter, the present disclosure will be described in more detail through examples, but this is intended to help specific understanding of the present invention, and the scope of the present invention is not limited to the exemplary embodiments.

[0153] <Example Embodiment> In the comparative example, a multilayer electronic component including a cover portion and a side edge portion was manufactured, and a multilayer electronic component to which gallium (Ga) was not added to the cover portion and the side edge portion was manufactured.

[0154] In the example, a multilayer electronic component was manufactured in the same manner as the comparative example except that 1 mol or less of gallium (Ga) was added to the cover portion and the side edge portion. In this case, the multilayer electronic component was manufactured so that the ratio (B / A) of the number of moles (B) of gallium (Ga) based on 100 mols of titanium (Ti) included in the side edge portion to the number of moles (A) of gallium (Ga) based on 100 mols of titanium (Ti) included in the cover portion satisfied 1.5≤B / A.

[0155] The following various comparative examples and examples are not descriptions of a single multilayer electronic component, but correspond to comparative examples and examples satisfying the above-described manufacturing method.

[0156] Fig. 7A and Figure 7B In Comparative Example 1, a scanning electron microscope (SEM) was used to photograph Figure 6 The images obtained by the region M1 and the region M2 are Figure 7C and Fig.7D In Example 1, a scanning electron microscope (SEM) was used to take a photo of Figure 6 The image is obtained by combining the area M1 and the area M2.

[0157] More specifically, Fig. 7Ais an image of a cross section of the first covering portion in the first direction and the third direction taken using a scanning electron microscope (SEM) in Comparative Example 1, and includes a 547 μm 2 The number of pores P in the was measured to be 229. Figure 7B is an image of a cross section of the second side edge portion in the first direction and the third direction taken by a scanning electron microscope (SEM) in Comparative Example 1, and includes a 190 μm section of the cross section of the second side edge portion. 2 The number of pores P in the was measured to be 45.

[0158] Figure 7C is an image of a cross section of the first covering portion in the first direction and the third direction taken with a scanning electron microscope (SEM) in Example 1, and includes 547 μm of the cross section of the first covering portion. 2 The number of pores P in was measured to be 110. Fig.7D is an image of a cross section of the second side edge portion in the first direction and the third direction taken by a scanning electron microscope (SEM) in Example 1, and includes a 190 μm section of the cross section of the second side edge portion. 2 The number of pores P in the was measured to be 39.

[0159] It can be seen that when the ratio (B / A) of the number of moles (B) of gallium (Ga) based on 100 moles of titanium (Ti) included in the side edge portion to the number of moles (A) of gallium (Ga) based on 100 moles of titanium (Ti) included in the covering portion satisfies 1.5≤B / A, the number of pores P included in the covering portion and the side edge portion is reduced.

[0160] In Comparative Example 2, Fig. 8A are images of cross sections of the first covering portion in the first direction and the third direction taken under the HAADF mode of a scanning electron microscope (SEM), Figure 8B is through Fig. 8A An image obtained by performing EDS analysis in a region to map the aluminum (Al) element, and Figure 8C is through Fig. 8A An image obtained by performing EDS analysis on a region to map the silicon (Si) element.

[0161] In Example 2, Fig.9A are images of cross sections of the first covering portion in the first direction and the third direction taken under the HAADF mode of a scanning electron microscope (SEM), Fig. 9B is through Fig.9A The image obtained by EDS analysis in the area to map the aluminum (Al) element, Fig. 9C is through Fig.9A The image was obtained by performing EDS analysis in the area to map the silicon (Si) element. Fig.9D is through Fig.9A An image obtained by performing EDS analysis in a region to map the gallium (Ga) element.

[0162] In Comparative Example 3, Fig. 10A The images of the cross sections of the side edge portion in the first direction and the third direction are taken in the HAADF mode of a scanning electron microscope (SEM). Fig. 10B is through Fig. 10A The image obtained by EDS analysis in the area to map the aluminum (Al) element, Fig. 10C is through Fig. 10A An image obtained by performing EDS analysis on a region to map the silicon (Si) element.

[0163] In Example 3, Fig.11A The images of the cross sections of the side edge portion in the first direction and the third direction are taken in the HAADF mode of a scanning electron microscope (SEM). Fig. 11B is through Fig.11A The image obtained by EDS analysis in the area to map the aluminum (Al) element, Fig. 11C is through Fig.11A The image was obtained by performing EDS analysis in the area to map the silicon (Si) element. Fig.11D is through Fig.11A An image obtained by performing EDS analysis in a region to map the gallium (Ga) element.

[0164] It can be seen from Comparative Examples 2 and 3 and Examples 2 and 3 that when gallium (Ga) is included in the covering portion and the side edge portion, gallium (Ga) is disposed in the grain boundaries and the triple points, and it can be seen that since gallium (Ga) is disposed together in the region where silicon (Si) and aluminum (Al) are detected, gallium (Ga) is included in the second phase including silicon (Si) and aluminum (Al).

[0165] Next, 20 channels each equipped with 20 sample pieces were manufactured for each of Comparative Examples 4 and 5 and Examples 4 and 5, and moisture resistance reliability evaluation was performed.

[0166] Fig. 12A is a moisture resistance reliability evaluation curve diagram of Comparative Example 4, Fig. 12B This is a moisture resistance reliability evaluation graph of Comparative Example 5. Fig. 12C is a moisture resistance reliability evaluation curve diagram of Example 4, Fig.12D 3 is a moisture resistance reliability evaluation curve graph of Example 5.

[0167] In the moisture resistance reliability evaluation, when the rated voltage of 1.0Vr is applied for 8 hours under the temperature conditions of 85℃ and the relative humidity conditions of 85%, the insulation resistance (IR) value decreases to 105 Channels with Ω or less were evaluated as defective.

[0168] For Comparative Examples 4 and 5, there was one channel determined to be defective, but for Examples 4 and 5, there was no channel determined to be defective, and no channel having an insulation resistance (IR) lower than the initial insulation resistance (IR0) was measured.

[0169] It can be seen that when the ratio (B / A) of the number of moles (B) of gallium (Ga) based on 100 moles of titanium (Ti) included in the side edge portion to the number of moles (A) of gallium (Ga) based on 100 moles of titanium (Ti) included in the cover portion satisfies 1.5≤B / A, the moisture resistance reliability of the multilayer electronic component is improved.

[0170] Fig.13 is a graph showing the grain microstructure size of Comparative Example (a) and Example (b).

[0171] The grain microstructure refers to the grains included in some regions of the cross section of the first covering portion in the first direction and the third direction of each experimental example. Fig.13 In the figure, the bar graph represents the average size of the microstructure, and the “I” shaped straight line graph represents the distribution of grain size.

[0172] The average size of the crystal grains included in some regions of Comparative Example (a) was 200 nm, and the average size of the crystal grains included in some regions of Example (b) was 176 nm. In addition, the size distribution of the crystal grains in Comparative Example (a) was measured to be wider than that in Example (b).

[0173] It can be seen that the ratio (B / A) of the number of moles (B) of gallium (Ga) based on 100 moles of titanium (Ti) included in the side edge portion to the number of moles (A) of gallium (Ga) based on 100 moles of titanium (Ti) included in the covering portion satisfies 1.5≤B / A, the size of the grains is reduced, and the size distribution is also improved, thereby predicting that the reduction in breakdown voltage (BDV) caused by the electric field concentration phenomenon will be improved.

[0174] Although the exemplary embodiments of the present disclosure have been described in detail above, the present disclosure is not limited to the above embodiments and the accompanying drawings, but is defined by the appended claims. Therefore, those of ordinary skill in the art may make various substitutions, modifications or changes without departing from the scope of the present disclosure defined by the appended claims, and these substitutions, modifications or changes should be interpreted as being included within the scope of the present disclosure.

[0175] In addition, the expression "exemplary embodiment" used in the present disclosure does not mean the same embodiment, and is provided to emphasize and explain different unique features. However, the embodiment presented above does not exclude the combination of features with another embodiment. For example, although an item described in a particular embodiment is not described in another embodiment, unless there is a description contrary to or contradictory to the item in another embodiment, the item can be understood as a description related to another embodiment.

[0176] In the present disclosure, the terms are used only to describe specific embodiments and are not intended to limit the present disclosure. Unless the context clearly indicates otherwise, a singular form may also include a plural form.

Claims

1. A multilayer electronic component, comprising: a main body including a capacitance forming portion and a covering portion, the capacitance forming portion including a dielectric layer and internal electrodes alternately arranged with the dielectric layer in a first direction, the covering portion being provided on two surfaces of the capacitance forming portion in the first direction, the main body including a first surface and a second surface opposite to each other in the first direction, a third surface and a fourth surface connected to the first surface and the second surface and opposite to each other in a second direction, and a fifth surface and a sixth surface connected to the first surface to the fourth surface and opposite to each other in a third direction; external electrodes provided on the third surface and the fourth surface; and side edge portions provided on the fifth surface and the sixth surface, wherein the covering portion and the side edge portions include titanium and gallium, and a ratio B / A of the number of moles of gallium based on 100 moles of titanium included in the side edge portions to the number of moles of gallium based on 100 moles of titanium included in the covering portion satisfies 1.5 ≤ B / A.

2. The multilayer electronic component according to claim 1, wherein Satisfies 0 mole < B ≤ 1.0 mole.

3. The multilayer electronic component according to claim 1, wherein: Satisfies 0 mole < A ≤ 1.0 mole.

4. The multilayer electronic component according to claim 1, wherein: The dielectric layer does not contain gallium.

5. The multilayer electronic component according to claim 1, wherein When the dielectric layer of the capacitance forming portion is referred to as a first dielectric layer, the covering portion includes a second dielectric layer, and the side edge portions include a third dielectric layer, and a composition of the first dielectric layer is different from a composition of at least one of the second dielectric layer and the third dielectric layer.

6. The multilayer electronic component according to claim 1, wherein: At least one of the covering portion and the side edge portions includes a second phase containing gallium.

7. The multilayer electronic component according to claim 6, wherein: At least one of the covering portion and the side edge portions includes a plurality of crystal grains, grain boundaries provided between adjacent crystal grains, and triple points provided at points where three or more grain boundaries contact each other, and the second phase is provided at the triple points.

8. The multilayer electronic component according to claim 6, wherein: The second phase further includes silicon.

9. The multilayer electronic component according to claim 1, wherein: At least one of the covering portion and the side edge portions includes a plurality of crystal grains and grain boundaries provided between adjacent crystal grains, and the grain boundaries include gallium.

10. The multilayer electronic component according to claim 9, wherein The grain boundaries include regions where an atomic percentage of gallium is greater than or equal to 2.0 at%.

11. The multilayer electronic component according to claim 9, wherein In the grain boundaries, an average atomic percentage of gallium is greater than or equal to 0.5 at% and less than or equal to 2.0 at%.

12. The multilayer electronic component according to claim 1, wherein In the cross section of the cover portion in the first direction and the third direction, the 2 The number of pores in is 0.30 or less.

13. The multilayer electronic component according to claim 1, wherein In the cross section of the side edge portion in the first direction and the third direction, the 2 The number of pores in is 0.22 or less.

14. The multilayer electronic component according to claim 4, wherein: Satisfies 0 mole < A ≤ 1.0 mole.

15. The multilayer electronic component according to claim 14, wherein At least one of the covering portion and the side edge portions includes a second phase containing gallium.

16. The multilayer electronic component according to claim 15, wherein At least one of the covering portion and the side edge portions includes a plurality of crystal grains, grain boundaries provided between adjacent crystal grains, and triple points provided at points where three or more grain boundaries contact each other, and the second phase is provided at the triple points.

17. The multilayer electronic component according to claim 16, wherein: The grain boundaries include regions where an atomic percentage of gallium is greater than or equal to 2.0 at%, and an average atomic percentage of gallium in the grain boundaries is greater than or equal to 0.5 at% and less than or equal to 2.0 at%.

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