Package and method of forming same

Abstract

In one embodiment, a method includes attaching a first package component to a substrate, where the first package component includes: an interposer; a die on the interposer; and a molding material surrounding the die; and attaching a reinforcement structure to the top surface of the die, where the molding material is free of the reinforcement structure. The embodiment of the invention also relates to a package and a method of forming the same.

Description

Technical Field

[0001] Embodiments of the present application relate to packages and methods of forming the same. Background Art

[0002] The semiconductor industry continues to improve the integration density of various electronic components (e.g., transistors, diodes, resistors, capacitors, etc.) by continuously reducing the minimum component size, which allows more components to be integrated into a given area. However, as the minimum component size decreases, additional issues arise that should be addressed. For example, one issue of concern is stress within the package. Summary of the invention

[0003] Some embodiments of the present application provide a method for forming a package, comprising: attaching a first packaging component to a substrate, wherein the first packaging component comprises: an interposer; a plurality of dies located on the interposer; and a molding material surrounding the plurality of dies; and attaching a plurality of reinforcement structures to top surfaces of the plurality of dies, wherein the molding material does not have the plurality of reinforcement structures.

[0004] Other embodiments of the present application provide a method for forming a package, comprising: attaching a component to a packaging substrate, wherein the component includes a first tube core; forming a first reinforcement structure on a first corner area of ​​the first tube core, wherein the first reinforcement structure completely overlaps the first tube core; and forming a second reinforcement structure on a second corner area of ​​the first tube core, wherein the second reinforcement structure completely overlaps the first tube core.

[0005] Still other embodiments of the present application provide a package, comprising: an interposer attached to a package substrate; a first semiconductor die bonded to the interposer; a second semiconductor die bonded to the interposer; a first reinforcement structure attached to a top surface of the first semiconductor die, wherein the first reinforcement structure is adjacent to a first side of the first semiconductor die; a second reinforcement structure attached to a top surface of the second semiconductor die, wherein the second reinforcement structure is adjacent to a first side of the second semiconductor die, wherein the first side of the first semiconductor die faces away from the first side of the second semiconductor die; and a molding material located on the interposer, wherein the molding material is separated from the first reinforcement structure and the second reinforcement structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] When read in conjunction with the accompanying drawings, various aspects of the disclosed embodiments can be best understood from the following detailed description. It should be noted that, in accordance with standard practice in the industry, the various components are not drawn to scale. In fact, for clarity of discussion, the size of the various components may be arbitrarily increased or reduced.

[0007] Figure 1 , Figure 2 , Figure 3 , Figure 4 , Figure 5 and Figure 6 Cross-sectional views illustrating intermediate steps in the formation of a package assembly in accordance with some embodiments.

[0008] Figure 7 and Figure 8 Cross-sectional and plan views illustrate intermediate steps in the formation of a package in accordance with some embodiments.

[0009] Fig. 9 and Fig.10 Cross-sectional and plan views illustrate intermediate steps in the formation of reinforcement structures on a package assembly in accordance with some embodiments.

[0010] Fig.11A , Fig. 11B , Fig. 11C and Fig.11D A plan view of a reinforcement structure on a package assembly according to some embodiments is shown.

[0011] Fig.12 A plan view of a reinforcement structure on a package assembly according to some embodiments is shown.

[0012] Fig.13A , Fig. 13B and Fig. 13C A plan view of a reinforcement structure on a package assembly according to some embodiments is shown.

[0013] Fig.14A and Fig. 14B A plan view of a reinforcement structure on a package assembly according to some embodiments is shown.

[0014] Fig.15 and Fig.16 Cross-sectional and plan views illustrate intermediate steps in the formation of a package in accordance with some embodiments.

[0015] Fig.17 and Fig.18 Cross-sectional and plan views illustrate intermediate steps in the formation of a package in accordance with some embodiments.

[0016] Fig.19 Cross-sectional views are shown of intermediate steps in the formation of a package in accordance with some embodiments.

[0017] Fig. 20 and Fig.21 Cross-sectional and plan views illustrate intermediate steps in the formation of a package in accordance with some embodiments.

[0018] Fig. 22 and Fig.23 Cross-sectional views illustrating intermediate steps in the formation of a package assembly in accordance with some embodiments.

[0019] Fig.24 Cross-sectional views are shown of intermediate steps in the formation of a package in accordance with some embodiments. DETAILED DESCRIPTION

[0020] The following disclosure provides many different embodiments or examples for realizing different features of the disclosed embodiments. Specific examples of components and arrangements are described below to simplify the disclosed embodiments. Of course, these are merely examples and are not intended to be limiting. For example, in the following description, forming a first component above or on a second component may include an embodiment in which the first component and the second component are directly contacted, and may also include an embodiment in which an additional component may be formed between the first component and the second component so that the first component and the second component may not be in direct contact. In addition, the disclosed embodiments may repeat reference numerals and / or characters in various examples. This repetition is for the purpose of simplicity and clarity, and does not itself indicate the relationship between the various embodiments and / or configurations discussed.

[0021] Additionally, for ease of description, spatially relative terms such as "below," "beneath," "lower," "above," "upper," etc. may be used herein to describe the relationship of one element or component to another (or additional) elements or components as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein should likewise be interpreted accordingly.

[0022] The embodiments discussed herein are intended to provide examples of the subject matter of the disclosed embodiments that can be manufactured or used, and those of ordinary skill in the art will readily appreciate the modifications that can be made while remaining within the contemplation of the different embodiments. Throughout the various views and illustrative embodiments, the same reference numerals are used to represent the same elements. Although the method embodiments may be discussed as being implemented in a particular order, other method embodiments may be implemented in any logical order.

[0023] According to some embodiments of the present disclosure, a reinforcement structure is attached to a package assembly to provide support and reduce thermally induced stresses within the package assembly. Thermally induced stresses may be due to a coefficient of thermal expansion (CTE) mismatch between the package assembly and the underlying substrate. In some embodiments, the reinforcement structure is placed near the corners of the device within the package assembly to reduce thermally induced stresses in these areas. In this way, stress-induced damage, such as cracks or warping, within the package assembly can be reduced, which can improve reliability and yield. The technology described herein can be applicable to various packaging technologies, such as system on integrated circuit (SoIC) technology, etc.

[0024] According to some embodiments, Figures 1 to 6 The package assembly 100 is shown (see Figure 6 ) is an intermediate step in the formation of the plurality of package components 100. A plurality of package components 100 may be at least partially formed on a single wafer 50 and then separated into separate package components 100. Thus, Figures 1 to 5 A packaging area 100 ′ is shown, within which the individual packaging components 100 are formed.

[0025] exist Figure 1 In some embodiments, a wafer 50 is formed or provided. The wafer 50 may be processed according to an applicable manufacturing process to form devices, integrated circuit dies, interconnect structures, interposers, etc. within a packaging region 100' of the wafer 50. In some embodiments, the wafer 50 may be an interposer, etc. According to some embodiments, the wafer 50 may include a substrate 51, a through substrate via (TSV) 52, and an interconnect structure 54. The substrate 51 may be a semiconductor substrate, such as a bulk semiconductor, a semiconductor on insulator (SOI) substrate, etc., which may be doped (e.g., with a p-type or n-type dopant) or undoped. The substrate 51 may be a wafer, such as a silicon wafer. Other substrates, such as a silicon on insulator (SOI) substrate, a multilayer substrate, or a gradient substrate may also be used. In some embodiments, the semiconductor material of the substrate 51 may include: silicon; germanium; compound semiconductors including silicon carbide, gallium arsenide, gallium phosphide, indium phosphide, indium arsenide, and / or indium antimonide; alloy semiconductors including silicon germanium, gallium arsenide phosphide, aluminum indium arsenide, aluminum gallium arsenide, gallium indium arsenide, gallium indium phosphide, and / or gallium indium arsenide phosphide; or combinations thereof. As previously described, a plurality of package components 100 may be formed on the same substrate 51 and then separated into separate package components 100 using a segmentation process (e.g., a sawing process, a dicing process, etc.).

[0026] Furthermore, in some embodiments, integrated circuit devices (not separately shown) may be formed at the front side surface of the substrate 51. The integrated circuit devices may include active devices (e.g., NMOS and PMOS transistors, diodes, etc.), passive devices (e.g., resistors, capacitors, etc.), etc. Furthermore, the TSVs 52 may be formed to extend partially through the substrate 51. In other embodiments, no active devices and / or passive devices are formed in the wafer 50.

[0027] In some embodiments, an interconnect structure 54 is formed over the front side of the substrate 51. The interconnect structure 54 includes a conductive component 55 formed in one or more dielectric layers (not shown separately). The conductive component 55 may include, for example, a wire, a conductive via, a conductive pad, a metallization pattern, a redistribution layer, etc. In some embodiments, the conductive component 55 includes a bonding pad 56 formed at the front side surface of the interconnect structure 54. The conductive component 55 of the interconnect structure 54 may be electrically connected to the integrated circuit device and / or the TSV 52. In some instances, the TSV 52 may extend into the interconnect structure 54. The conductive component 55 may be formed using a damascene process, a dual damascene process, or another suitable technique. The conductive component 55 may include, for example, copper, aluminum, tungsten, ruthenium, cobalt, alloys thereof, combinations thereof, etc. The dielectric layer may be formed of a dielectric material or include a dielectric material such as a polymer, silicon nitride, silicon oxide, silicon oxynitride, silicon oxycarbide, silicon carbonitride, etc., combinations thereof, and / or multilayers thereof. In some embodiments, the dielectric layer may include one or more materials such as phosphosilicate glass (PSG), borosilicate glass (BSG), boron-doped phosphosilicate glass (BPSG), undoped silicate glass (USG), low-k dielectric materials, etc. Other materials are also possible. In some examples, the dielectric layer may be an intermetallic dielectric (IMD) layer. Figure 1 The interconnect structure 54 shown in FIG. 5 is an example, and the interconnect structure 54 may have different components or a different configuration than shown. In some embodiments, the interconnect structure 54 may include a sealing ring (not shown).

[0028] exist Figure 2 In some embodiments, device 60 is bonded to interconnect structure 54 of wafer 50. As an example, Figure 2Two devices 60 are shown within each package region 100', denoted as device 60A and device 60B, but in other embodiments, there may be more or fewer devices 60 within each package region 100'. Devices 60 may include, for example, chips, dies, semiconductor devices, integrated circuit dies, system-on-chip (SoC) devices, system-on-integrated circuit (SoIC) devices, packages, etc., or combinations thereof. In some embodiments, device 60 includes a logic die (e.g., a central processing unit (CPU, xPU), a graphics processing unit (GPU), a system on chip (SoC), an application processor (AP), a microcontroller, etc.), a memory die (e.g., a dynamic random access memory (DRAM) die, a static random access memory (SRAM) die, a hybrid memory cube (HMC) die, a high bandwidth memory (HBM) die, etc.), a power management die (e.g., a power management integrated circuit (PMIC) die), a radio frequency (RF) die, a sensor die, a microelectromechanical system (MEMS) die, a signal processing die (e.g., a digital signal processing (DSP) die), a front-end die (e.g., an analog front-end (AFE) die), a baseband (BB) die, a photonic integrated circuit, a photonic package, a photonic die, etc., or a combination thereof. Other types of devices 60 are also possible. Devices 60A and 60B may be devices of similar types, or may be devices of different types, and may have similar sizes or different sizes.

[0029] In some embodiments, the device 60 is attached to the wafer 50 using a direct bonding process, such as fusion bonding, dielectric-to-dielectric bonding, and / or metal-to-metal bonding. According to some embodiments, bonding the device 60 to the wafer 50 includes: pre-treating the bonding surface of the device 60 and / or the bonding surface of the interconnect structure 54 with a process gas including oxygen (O2) and / or nitrogen (N2); performing a pre-bonding process to bond the bonding surfaces together; and then performing an annealing process to strengthen the bonding. The bonding surface of the interconnect structure 54 may include, for example, an exposed surface of a dielectric bonding layer of the interconnect structure and an exposed surface of a bonding pad 56. The bonding surface of the device 60 may include, for example, an exposed surface of a dielectric bonding layer and an exposed surface of a metal bonding pad.

[0030] According to some embodiments, during the pre-bonding process, the bonding surface of the device 60 is placed in physical contact with the bonding surface of the interconnect structure 54. The metal bonding pad of the device 60 can be placed in physical contact with the corresponding bonding pad 56 of the interconnect structure 54. Pressure can be applied to press the device 60 against the interconnect structure 54. The pre-bonding process can be performed at room temperature (e.g., in a range from about 20°C to about 25°C), but higher temperatures can also be used. After the pre-bonding process, an annealing process is performed to bond the device 60 to the interconnect structure 54. The dielectric bonding surface of the device 60 is bonded to the dielectric bonding surface of the interconnect structure 54 by dielectric-to-dielectric bonding, and the metal bonding pad of the device 60 is bonded to the bonding pad 56 of the interconnect structure by metal-to-metal bonding. According to some embodiments, the annealing process is performed at a temperature in the range of 150°C to 350°C. The annealing duration can be in the range of 30 minutes to 60 minutes. Other bonding techniques are also possible.

[0031] exist Figure 3 In some embodiments, a molding material 70 is deposited on the wafer 50 and between the devices 60. The molding material 70 may be deposited over the wafer 50, over the device 60, and between adjacent devices 60 (e.g., between adjacent devices 60A and 60B). The molding material 70 may laterally surround each device 60. The molding material 70 may include a molding compound, a sealant, an epoxy resin, a polymer, a composite material, a silicon oxide filling material, and the like. The molding material 70 may be applied by compression molding, transfer molding, deposition, and the like. The molding material 70 may be applied in a liquid or semi-liquid form and then subsequently cured. In some embodiments, a planarization process, such as a CMP process or a grinding process, may be implemented to remove excess portions of the molding material 70. In some embodiments, the planarization process exposes the device 60, and after the planarization process is implemented, the top surfaces of the device 60 and the molding material 70 are substantially flush.

[0032] exist Figure 4 In some embodiments, the back side of substrate 51 is thinned to expose TSV 52. Substrate 51 may be thinned using a planarization process (eg, a CMP process and / or a grinding process), an etching process, etc., or a combination thereof.

[0033] exist Figure 5In the embodiment, according to some embodiments, a redistribution structure 58 is formed on the back side of the substrate 51, and a conductive connector 80 is formed on the redistribution structure 58. The redistribution structure 58 includes one or more metallization layers (e.g., redistribution layers, redistribution lines, etc.) formed in one or more dielectric layers (not separately labeled). The metallization layers of the redistribution structure 58 are electrically connected to the TSVs 52. Specifically, the metallization layers are connected to the device 60 through the TSVs 52 and the interconnect structure 54. The illustrated redistribution structure 58 is an example and may include more or fewer dielectric layers and / or metallization layers than illustrated.

[0034] The dielectric layer of the redistribution structure 58 is formed of one or more suitable dielectric materials, such as a polymer, which may be a photosensitive material, such as PBO, polyimide, a BCB-based polymer, etc., which may be patterned using a photolithographic mask. In other embodiments, the dielectric layer is formed of: an oxide, such as silicon oxide, PSG, BSG, BPSG; a nitride, such as silicon nitride; a combination thereof, such as silicon oxynitride; etc. The dielectric layer may be formed by spin coating, lamination, chemical vapor deposition (CVD), etc., or a combination thereof. After each dielectric layer is formed, it may then be patterned to expose the underlying conductive features, for example, the underlying portion of the metallization layer. Patterning may be implemented using an acceptable process, such as by exposing the dielectric layer to light when the dielectric layer is a photosensitive material, or by etching using, for example, anisotropic etching. If the dielectric layer is formed of a photosensitive material, the dielectric layer may be developed after exposure.

[0035] The metallization layer includes conductive components, such as conductive vias and / or wires. The conductive vias extend through the dielectric layer, and the wires extend along the dielectric layer. As an example of forming a metallization layer, a seed layer (not shown separately) is formed above the corresponding lower component. For example, the seed layer can be formed on the corresponding dielectric layer and in an opening through the corresponding dielectric layer, or can be formed on TSV 52 or substrate 51. In some embodiments, the seed layer is a metal layer, which can be a single layer or a composite layer including multiple sublayers formed by different materials. In some embodiments, the seed layer includes a titanium layer and a copper layer above the titanium layer. The seed layer can be formed using a deposition process, such as physical vapor deposition (PVD), etc. A photoresist is then formed and patterned on the seed layer. The photoresist can be formed by spin coating, etc., and can be exposed to light for patterning. The pattern of the photoresist corresponds to the metallization layer. Patterning forms an opening through the photoresist to expose the seed layer. Conductive material is formed in the opening of the photoresist and on the exposed portion of the seed layer. The conductive material can be formed by plating, such as electroplating or chemical plating. The conductive material may include a metal or a metal alloy, such as copper, titanium, tungsten, aluminum, etc. or a combination thereof. Then, the photoresist and the portion of the seed layer on which the conductive material is not formed are removed. The photoresist can be removed by an acceptable ashing or stripping process, such as using oxygen plasma, etc. Once the photoresist is removed, the exposed portion of the seed layer is removed, such as by an acceptable etching process, such as by wet etching or dry etching. The remaining portion of the seed layer and the conductive material forms a metallization layer. This is an example, and other techniques or materials can be used to form the redistribution structure 58. For example, in some instances, the redistribution structure 58 may include other passivation layers or insulating layers.

[0036] In some embodiments, conductive connectors 80 may be formed on redistribution structure 58 for attaching package assembly 100 to external components (eg, Figure 7 The conductive connector 80 may be provided on a package substrate 202 of the embodiment of the present invention. In some embodiments, the conductive connector 80 may optionally include an under-bump metal (UBM). The UBM has a bump portion located on a major surface of the redistribution structure 58 and extending along the major surface of the redistribution structure 58, and has a through-hole portion extending through the redistribution structure 58 to physically and electrically connect to the metallization layer. The UBM may include one or more conductive materials, such as metals, such as copper, titanium, tungsten, aluminum, etc. The UBM may be formed of the same material as the metallization layer. In some embodiments, the UBM has a different size than the metallization layer.

[0037] In some embodiments, the conductive connector 80 includes a connector that can be formed on the UBM (if present). The connector can be a ball grid array (BGA) connector, a solder ball, a metal column, a controlled collapse chip connection (C4) bump, a microbump, a bump formed by chemical nickel plating-chemical palladium plating-immersion gold technology (ENEPIG), etc. The connector can include a conductive material, such as solder, copper, aluminum, gold, nickel, silver, palladium, tin, etc. or a combination thereof. In some embodiments, the connector is formed by initially forming a solder layer by evaporation, electroplating, printing, solder transfer, ball placement, etc. Once the solder layer has been formed on the structure, reflow can be implemented to shape the material into a desired bump shape. In another embodiment, the connector includes a metal column (such as a copper column) formed by sputtering, printing, electroplating, chemical plating, CVD, etc. The metal column can be solder-free and have a substantially vertical sidewall. In some embodiments, a metal cap layer is formed on the top of the metal column. The metal capping layer may include nickel, tin, tin-lead, gold, silver, palladium, indium, nickel-palladium-gold, nickel-gold, etc., or a combination thereof, and may be formed by a plating process.

[0038] exist Figure 6 In some embodiments, a singulation process is performed to separate the package area 100' into individual package components 100. The singulation process may include a sawing process, an etching process, or any other suitable singulation process. In this way, a package component 100 including a plurality of devices 60 may be formed. Figures 1 to 6 The process described in for forming package assembly 100 is an example, and package assembly 100 may have a different configuration or may be formed using different process steps than shown. All suitable materials, techniques, or variations thereof are considered within the scope of the disclosed embodiments.

[0039] exist Figure 7 and Figure 8 In accordance with some embodiments, the package assembly 100 is attached to a package substrate 202 . Figure 7 A cross-sectional view is shown, and Figure 8 A schematic plan view is shown. In some examples, Figure 7 The cross-section of Figure 8 The package assembly 100 may be similar to the cross section of the reference cross section AA' shown in FIG. Figures 1 to 6 For clarity, the package assembly 100 is described. Figure 7 Simplified diagrams of package assembly 100 are shown in FIG. 1 and in some subsequent figures. Figure 8 As shown in FIG. 1 , package assembly 100 includes two devices 60 , device 60A and device 60B, surrounded by molding material 70 . However, in other embodiments, the number, arrangement, or size of devices 60 of package assembly 100 may differ from that shown.

[0040] The package substrate 202 may be any suitable substrate or component, such as a device die, a redistribution structure, an interposer, a wafer, a semiconductor substrate, a panel, a core substrate, a printed circuit board (PCB), a motherboard, a mainboard, etc. The package substrate 202 may include conductive features, such as conductive wires, conductive vias, conductive pads, etc. (not shown) to make electrical interconnects within the package substrate 202 and to make electrical connections to the package assembly 100 or other components attached to the package substrate 202. The package substrate 202 may or may not include active devices and / or passive devices. In some embodiments, a conductive connector 204 is formed on the package substrate 202, and the conductive connector 204 may be similar to the conductive connector 80 described previously, but other conductive connectors 204 are also possible.

[0041] In some embodiments, the package assembly 100 is bonded to the package substrate 202 by aligning the conductive connector 80 with a corresponding conductive feature (not shown) of the package substrate 202. For example, the conductive feature of the package substrate 202 may be a conductive pad, a conductive column, a solder bump, etc. Then, the conductive connector 80 is placed in contact with the corresponding conductive feature. Then, a reflow process may be performed to bond the conductive connector 80 to the conductive feature of the package substrate 202. In this way, the package assembly 100 may be physically and electrically connected to the package substrate 202. In other embodiments, the package assembly 100 may be bonded to the package substrate 202 using fusion bonding, such as dielectric-to-dielectric bonding and / or metal-to-metal bonding.

[0042] Still reference Figure 7 According to some embodiments, an optional underfill 205 may be deposited between the package assembly 100 and the package substrate 202. The underfill 205 may surround the conductive connector 80. In some examples, the underfill 205 is cured using a thermal process, an ultraviolet (UV) process, etc. In other embodiments, the underfill 205 is not formed.

[0043] exist Fig. 9 and Fig.10 According to some embodiments, a reinforcement structure 110 is attached to the devices 60A-60B. According to some embodiments, Fig. 9 A cross-sectional view is shown, and Fig.10 A plan view is shown. Reinforcement structure 110 includes one or more structures attached to devices 60A-60B to provide additional support during subsequent processing steps.

[0044] In some instances, the coefficients of thermal expansion (CTE) of the devices 60A-60B and the package substrate 202 may be different. This CTE mismatch causes different thermal expansion between the devices 60A-60B and the package substrate 202, which may generate stresses within the package assembly 100 when the package assembly 100 is heated during subsequent processing steps. In some instances, this "thermal stress" due to the CTE mismatch may be greater in areas of the package assembly 100 where the molding material 70 provides less rigid support during thermal expansion. For example, in some instances, the thermal stress may be greater in a "corner region" located near the corners of the devices 60A-60B, such as in an example where the thermal stress is greater in a "corner region" located near the corners of the devices 60A-60B. Fig.10 100 for the device 60A as corner regions 111A-111B. In some instances, the corner region 111A may be considered an “outer corner region” of the device 60A because it is relatively close to the edge of the package assembly 100, and the corner region 111B may be considered an “inner corner region” of the device 60A because it is relatively close to the center of the package assembly 100. In some instances, the outer corner region (e.g., corner region 111A) may be a region located near the corner of the device 60 and the corner of the package assembly 100, and the inner corner region (e.g., corner region 111B) may be a region located near the corner of the device 60 but away from the corner of the package assembly 100. In some instances, thermal stresses in these corner regions may cause cracks or other stress-stress damage within the package assembly 100, such as cracks in the wafer 50. In some instances, the outer corner regions may be more susceptible to thermal stress than the inner corner regions.

[0045] Therefore, the reinforcement structure 110 as described herein can be attached to the device 60A-60B to provide additional support during thermal expansion, reducing the chance of cracks or other stress-related damage. The rigid support against thermal stress provided by the reinforcement structure 110 can reduce the stress within the package assembly 100 and / or the package substrate 202. The reinforcement structure 110 can reduce the CTE mismatch between the upper portion of the package assembly 100 and the package substrate 202, which can reduce the chance of cracks due to thermal stress. For example, in some instances, the use of the reinforcement structure 110 as described herein can reduce the chance of cracks in the wafer 50 due to thermal stress by more than 5%. In this way, the reliability and / or yield of the package can be improved.

[0046] The reinforcement structure 110 can be attached to the top surface of the device 60A-60B using an adhesive, an epoxy, or the like. In some embodiments, the reinforcement structure 110 can be a rigid structure formed of one or more rigid materials, such as stainless steel, another metal, a ceramic, or the like. In some embodiments, the reinforcement structure 110 can have a CTE greater than the CTE of the device 60, such as a CTE greater than about 2.6 ppm / °C, but other CTEs are possible. In some embodiments, the reinforcement structure 110 can have a Young's modulus greater than the Young's modulus of the packaging substrate 202, such as a Young's modulus greater than about 15 GPa, but other values ​​are possible. In some embodiments, the reinforcement structure 110 has a thickness T1 in the range of about 1 μm to about 1000 μm, but other thicknesses are possible. In some instances, a greater thickness T1 can provide a more rigid support against thermal stresses.

[0047] In some embodiments, the reinforcement structure 110 can be attached to the device 60 such that the reinforcement structure 110 does not overlap (e.g., extend above) or contact the molding material 70 to avoid effects caused by deformation or displacement of the molding material 70 during the thermal process. In other words, the reinforcement structure 110 attached to the device 60 is contained within the "footprint" (e.g., perimeter) of the device 60. In some embodiments, the reinforcement structure 110 attached to the device 60 completely overlaps the device 60 and completely underlaps the device 60 such that no portion of the reinforcement structure 110 protrudes beyond the perimeter of the device 60. Therefore, the reinforcement structure 110 can be aligned with the sidewalls of the underlying device 60 such that the sidewalls of the reinforcement structure 110 and the sidewalls of the device 60 are approximately flush, coplanar, or coterminal. In some examples, aligning the reinforcement structure 110 with the sidewalls of the underlying device 60 can most effectively provide rigid support against thermal stresses. However, in other embodiments, the reinforcement structure 110 can be offset relative to the sidewalls of the underlying device 60. In some embodiments, the sidewalls of the reinforcement structure 110 and the sidewalls of the underlying device 60 can be laterally separated by a distance D1 in the range of about 0.1 μm to about 100 μm. For embodiments where the sidewalls of the reinforcement structure 110 and the sidewalls of the underlying device 60 are coplanar, the separation distance D1 can be about 0 μm. Other separation distances D1 are also possible. The separation distance D1 can also be considered as the separation distance between the molding material 70 and the reinforcement structure 110. In some instances, a smaller distance D1 can allow the reinforcement structure to provide a more effective rigid support against thermal stress. Fig.10 An exemplary reinforcement structure 110 is shown at a distance D1 from a first sidewall of the device 60B and at a distance D1' from a second sidewall of the device 60B. The distances D1 and D1' may be similar or different.

[0048] refer to Fig.10According to some embodiments, the reinforcement structure 110 may have a width W1 in the range of about 1 μm to about 3300 μm and / or a length L1 in the range of about 1 μm to about 33000 μm, but other sizes are also possible. In some embodiments, a single reinforcement structure 110 has a size that is smaller than the size of the underlying device 60. For example, the width W1 may be between about 1 μm and about the width of the underlying device 60, and / or the length L1 may be between about 1 μm and about the length of the underlying device 60. In some embodiments, for two reinforcement structures 110 adjacent to the same side of the underlying device 60, the combined length of the two reinforcement structures 110 may be between about 2 μm and about the length of the side of the underlying device 60. For example, in some embodiments, two reinforcement structures 110 adjacent to the same side of the underlying device 60 may both have a length of about half the length of the side. Other combinations of length or width are also possible, and reinforcement structures 110 having various shapes may have various sizes. In some embodiments, reinforcement structures 110 can have any suitable dimensions that avoid overlapping with molding material 70, although some overlap of molding material 70 may exist or is possible in some instances. In some embodiments, the top surface of device 60 is not completely covered (or nearly completely covered) by one or more reinforcement structures 110 to avoid introducing thermal stress due to the rigidity of reinforcement structures 110.

[0049] Fig.10 An embodiment is shown in which reinforcement structures 110 are four rectangular structures attached near the four outer corners of devices 60A and 60B. In other embodiments, reinforcement structures 110 may have any other suitable shape and / or may be attached in any other suitable location. In other embodiments, another number of reinforcement structures 110 may be attached to package assembly 100. The shape, location, arrangement, or number of reinforcement structures 110 may depend on or be determined by the specific application, the specific structure of package assembly 100, or the specific structure of the package that includes package assembly 100. As a non-limiting example for illustrative purposes, FIG. 11A to FIG. 14B A plan view of a reinforcement structure 110 on a package assembly 100 is shown in accordance with some embodiments. FIG. 11A to FIG. 11D Embodiments including reinforcement structures 110 of different shapes are shown, and Fig.12 and FIG. 13A to FIG. 13C Embodiments including different numbers of reinforcement structures 110 are shown. FIG. 14A to FIG. 14B An embodiment of the reinforcement structure 110 is shown that includes a ring-like configuration.

[0050] Fig.11A An embodiment is shown in which the reinforcement structure 110 has a triangular shape. Fig.11A As shown in , in some embodiments, reinforcement structure 110 may be shaped like a right triangle with the vertical sides aligned with the sides of device 60 . Fig. 11B An embodiment is shown where the reinforcement structure 110 is an "L-shaped" structure. The two legs of the L-shape may have the same length and width or different lengths and / or widths. Fig. 11C The embodiment shown in FIG. 1 shows a reinforcing structure 110 shaped approximately like a quarter circle or a quarter ellipse. Fig. 11C As shown in , the reinforcement structure 110 can have two vertical sides and one curved side. In other embodiments, the curved side of the reinforcement structure 110 can have another type of curve other than a circular curve or an elliptical curve. These are examples, and the reinforcement structure 110 can have any suitable shape. For example, reinforcement structures 110 of different shapes can be attached to the same package assembly 100. Fig.11D 1 and 2 show non-limiting examples of various irregular shapes that the reinforcement structure 110 may have. Fig.11D As shown in , a single reinforcement structure 110 can extend between opposite sides of the device 60 , and the single reinforcement structure 110 can have a plurality of separation distances (eg, D1 or D1 ′) from the molding material 70 .

[0051] like Fig.12 As shown in FIG. , reinforcement structure 110 may also be placed near the inner corners of device 60 (e.g., Fig.10 In some examples, reinforcement structures 110 may be placed near all four corners of device 60. As an additional non-limiting example, Fig.13A A triangular reinforcement structure 110 is shown placed near an inner corner, and Fig. 13B An L-shaped reinforcement structure 110 is shown placed near an inner corner. Fig. 13C FIG. 1 shows an embodiment in which the package assembly 100 includes three devices 60A-60C. Fig. 13C As shown in , the reinforcement structure 110 may or may not be placed near any corner of any of the devices 60A-60C. In some embodiments, the reinforcement structure 110 may also extend between an outer corner and an inner corner. Fig. 13C It is also intended as an illustrative and non-limiting example.

[0052] Fig.14A and Fig. 14B A non-limiting embodiment is shown in which one or more reinforcement structures 110 are arranged in a ring configuration. The ring configuration may include one or more reinforcement structures 110 extending mostly or entirely along the outer perimeter of the device 60. For example, Fig.14AAn embodiment is shown in which a single reinforcement structure 110A extends along the outer perimeter of device 60A and a single reinforcement structure 110B extends along the outer perimeter of device 60B. For example, reinforcement structure 110A extends along three sides of device 60A and reinforcement structure 110B extends along three sides of device 60B. Reinforcement structures 110A and 110B are arranged together in an annular configuration with a gap between devices 60A and 60B so that reinforcement structures 110A-110B do not extend over molding material 70. In other embodiments, a single annular reinforcement structure 110 may be used, such as Fig. 14B as shown in . Fig. 14B A single reinforcement structure 110 extends over two devices 60A-60B and over the molding material 70 between the devices 60A-60B. In some instances, the distance that the annular reinforcement structure 110 extends over the molding material 70 can be minimized to avoid thermal effects from the molding material 70. In some embodiments, the separation distance between the devices 60A and 60B can be in the range of about 10 μm to about 33,000 μm, but other distances are possible. These are examples, and the annular reinforcement structure 110 can have other thicknesses, varying thicknesses, or other configurations than shown. In some instances, using the reinforcement structure 110 in an annular configuration can provide rigid support against thermal stresses near outer corners, along sidewalls, and near inner corners, which can reduce the risk of thermal stress damage.

[0053] According to some embodiments, Figures 9 and 10 After the process steps shown in Fig.15 and Fig.16 Attachment of package assembly 210 to package substrate 202 is shown. Fig.15 A cross-sectional view is shown, and Fig.16 A plan view is shown. The package assembly 210 may be a die, a chip, a package, etc., and may be similar to the previously described device 60 or package assembly 100. For example, in some embodiments, the package assembly 210 may include a memory die, such as a dynamic random access memory (DRAM) die, a static random access memory (SRAM) die, a hybrid memory cube (HMC) die, a high bandwidth memory (HBM) die, etc. Other types of package assemblies 210 are also possible. The package assemblies 210 attached to the package substrate 202 may be similar or different types of package assemblies 210, and may have a different number or arrangement than shown.

[0054] In some embodiments, the package component 210 can be attached to the package substrate 202 using techniques similar to those described for attaching the package component 100. For example, the conductive connectors 211 of the package component 210 can be placed on corresponding conductive features of the package substrate 202, and a reflow process can then be performed to bond the conductive connectors to the package substrate 202. In some instances, the reflow process can include a thermal process in the range of about 150°C to about 250°C, but other temperatures are also possible. In some instances, the reflow process can induce thermal stress within the package component 100, and the reinforcement structure 110 can provide rigid support to resist thermal stress, thereby reducing the chance of thermal stress damage during the reflow process. In some embodiments, an underfill material can be deposited between the package component 210 and the package substrate 202, which can be similar to the underfill 205 previously described.

[0055] According to some embodiments, Fig.17 and Fig.18 Attachment of support structure 230 to package substrate 202 is shown. Fig.17 A cross-sectional view is shown, and Fig.18 A plan view is shown. The support structure 230 may be a rigid structure attached to the package substrate 202 to provide structural support and reduce warping. Fig.18 As shown in , support structure 230 may be a ring-shaped structure, such as a reinforcement ring, etc. Support structure 230 may include one or more suitable materials, such as metal, ceramic, etc. Support structure 230 may be attached to package substrate 202 using adhesive, epoxy, etc. In other embodiments, support structure 230 includes multiple parts that are individually attached to package substrate 202. Fig.17 The support structure 230 is shown having approximately the same height above the package substrate 202 as the package assembly 210 , but in other embodiments the support structure may have a height that is greater or less than the package assembly 100 and / or the package assembly 210 .

[0056] Fig.19A cover 240 is shown attached to a support structure 230 to form a package 200 in accordance with some embodiments. The cover 240 covers and protects the package assembly 100 and the package assembly 210. In some embodiments, a portion of the cover 240 is attached to the package assembly 100 and / or the package assembly 210 to facilitate heat dissipation from the package assembly 100 and / or the package assembly 210. In some instances, a thermal interface material (TIM, not shown) or the like may be deposited between the cover 240 and the package assembly 100 and / or the package assembly 210 to facilitate heat transfer. Therefore, where the cover 240 is described herein as contacting the package assembly 100 / 210, it should be understood that the TIM or the like may or may not be present between the cover 240 and the package assembly 100 / 210. In some instances, the contour of the underside of the cover 240 may have a shape corresponding to the different heights of the package assembly 100 and the package assembly 210, such as Fig.19 . In some embodiments, the cover 240 can have a thickness in the range of about 100 μm to about 5000 μm, but other thicknesses and multiple thicknesses are also possible. The cover 240 can be attached to the support structure 230 using an adhesive, epoxy resin, etc. In other embodiments, the support structure 230 is part of the cover 240, and thus the cover 240 is directly attached to the package substrate 202. The cover 240 can be a material such as a metal (e.g., steel, copper, etc.), a ceramic, etc. In some embodiments, the CTE of the cover 240 is approximately equal to or less than the CTE of the reinforcement structure 110.

[0057] In some embodiments, the underside of the cover 240 is contoured so that the cover 240 does not physically contact the reinforcement structure 110. In this way, the cover 240 can account for thermal expansion of the reinforcement structure 110 and avoid generating additional thermal stress due to contact between the reinforcement structure 110 and the cover 240. Fig.19 As shown in , the underside of the cover 240 can have a groove 242 that is shaped to provide separation between the cover 240 and the reinforcement structure 110 while still allowing the underside of the cover 240 to contact the package assembly 100. In some embodiments, the reinforcement structure 110 can be laterally surrounded by the cover 240. In some embodiments, the cover 240 can be separated from the reinforcement structure 110 by a distance in the range of about 10 μm to about 1000 μm, but other distances are also possible. In some embodiments, the height H1 of the groove 242 is greater than the thickness T1 of the reinforcement structure 110 therein. In some embodiments, the groove 242 extends a distance R1 above the package assembly 100, and the distance R1 is greater than the corresponding width (e.g., W1) or length (e.g., L1) of the reinforcement structure 110 within the groove 242.

[0058] Fig. 20 and Fig.21 A package 300 including a support ring 250 is shown according to some embodiments. Fig. 20 A cross-sectional view is shown, and Fig.21 The package 300 is similar to Fig.19 , except that a support ring 250 is used instead of the support structure 230 and the cover 240. In some examples, the support ring 250 can be similar to the support structure 230. For example, in some embodiments, the support ring 250 can be a reinforcement ring, etc. The support ring 250 can be attached to the package substrate 202 using an adhesive, an epoxy resin, etc. The support ring 250 can include one or more rigid materials, such as metals, ceramics, plastics, etc. In some embodiments, the height of the support ring 250 is greater than the height of the package assembly 100 and / or the package assembly 210. In other embodiments, the height of the support ring 250 can be approximately equal to or less than the height of the package assembly 100 / 210.

[0059] In the above description Figures 1 to 9 In the embodiment, the reinforcement structure 110 is attached to the package component 100 after the package component 100 is attached to the package substrate 202. However, in other embodiments, the reinforcement structure 110 is formed on the package component 100 before the package component 100 is attached to the package substrate 202. As an example, Figure 22 to Figure 23 FIG. 1 shows an intermediate step in the formation of a reinforcement structure 110 on a package assembly 100 according to some embodiments. The package assembly 100 may be similar to the one for FIG. Figures 1 to 6 those described, and the reinforcement structure 110 can be similar to those previously described. Figure 22 to Figure 24 Describes the Figure 5 The reinforcement structure 110 is formed on the structure shown in FIG. 2 , but the reinforcement structure 110 may be formed after any suitable process step before attaching the package assembly 100 to the package substrate 202 .

[0060] exist Fig. 22 In the embodiment, the reinforcement structure 110 is formed on the packaging area 100' before being divided into the packaging components 100. Therefore, the reinforcement structure 110 can be formed on a surface similar to Figure 5 In some embodiments, reinforcement structure 110 may be attached to the top surface of device 60 using an adhesive, epoxy, or the like.

[0061] In other embodiments, the reinforcement structure 110 is a metal structure formed directly on the top surface of the device 60. The reinforcement structure 110 may include a metal material deposited using a suitable technique, such as CVD, PVD, atomic layer deposition (ALD), plating, etc. The reinforcement structure 110 may include a metal, such as copper, aluminum, gold, silver, iron, tin, their alloys, their combinations, etc. In some embodiments, the reinforcement structure 110 may be formed by depositing a metal material using a suitable deposition technique and then patterning the metal material using a suitable photolithography and etching technique. In other embodiments, a seed layer (not shown separately) is first deposited above the top surface of the device 60 and the molding material 70. In some embodiments, the seed layer is a metal layer, which may be a single layer or a composite layer including a plurality of sublayers formed by different materials. In some embodiments, the seed layer includes a copper layer above a titanium layer and a titanium layer. The seed layer may be formed using a deposition process, such as PVD, etc. Then a photoresist is formed and patterned on the seed layer. The photoresist may be formed by spin coating, etc., and may be exposed to light for patterning. The pattern of the photoresist corresponds to the reinforcement structure 110. Patterning forms an opening through the photoresist to expose the seed layer. Using a plating process, such as electroplating, chemical plating, etc., a metal material is formed in the opening of the photoresist and on the exposed portion of the seed layer. Then, the photoresist and the portion of the seed layer on which the metal material is not formed are removed. The photoresist can be removed by an acceptable ashing or stripping process, such as using oxygen plasma, etc. Once the photoresist is removed, the exposed portion of the seed layer is removed, such as by an acceptable etching process, such as by wet etching or dry etching. The remaining portion of the seed layer and the metal material forms the reinforcement structure 110. This is an example, and other techniques or materials can be used to form the reinforcement structure 110.

[0062] exist Fig.23 In some embodiments, a singulation process is performed to separate the package area 100' into independent package components 100 with reinforcement structures 110. The singulation process can be similar to the above-mentioned Figure 6 Describe the process.

[0063] exist Fig.24 In the embodiment, the package assembly 100 with the reinforcement structure 110 is attached to the package substrate 202. The package assembly 100 with the reinforcement structure 110 can be attached to the package substrate 202 in a manner similar to that described above. Figure 7 After the package assembly 100 with the reinforcement structure 110 is attached to the package substrate 202, Fig.24 The resulting structure is similar to the previous Fig. 9 Subsequent processing may then be performed to form a package including a package assembly 100 having a reinforcement structure 110, which may be performed using a method similar to that previously described for Figures 15 to 21Other materials or process steps are possible.

[0064] Other components and processes may also be included. For example, a test structure may be included to help perform verification testing on a 3D package or 3DIC device. The test structure may include, for example, a test pad formed in a redistribution layer or on a substrate, which allows testing of the 3D package or 3DIC, using probes and / or probe cards, etc. Verification testing may be performed on intermediate structures as well as final structures. In addition, the structures and methods disclosed herein may be used in conjunction with a test method that incorporates intermediate verification of known good dies to increase yield and reduce costs.

[0065] Embodiments described herein can achieve advantages. Forming a reinforcement structure on a package assembly as described herein can reduce the chance of stress damage due to thermal expansion. For example, the reinforcement structure can reduce thermal stress near the corners of devices within the package assembly. The reinforcement structure can reduce thermal stress damage within the package assembly caused by a CTE mismatch between the devices of the package assembly and the package substrate to which the package assembly is attached. The reinforcement structure can prevent thermally induced damage, such as cracks in an interposer or other structure within the package assembly. In this way, the reliability and yield of the package assembly or package can be improved.

[0066] In an embodiment of the present disclosure, a method includes: attaching a first package component to a substrate, wherein the first package component includes: an interposer; a die located on the interposer; and a molding material surrounding the die; and attaching a reinforcement structure to a top surface of the die, wherein the molding material is free of the reinforcement structure. In an embodiment, the reinforcement structures are respectively attached to corresponding corners of the die. In an embodiment, the corresponding corners of the die are corners of the die that are laterally closer to the edge of the interposer relative to the center of the interposer. In an embodiment, the method includes: attaching a cover to the top surface of the die, wherein the cover is not in physical contact with the reinforcement structure. In an embodiment, the method includes: attaching a second package component to the substrate. In an embodiment, the method includes: attaching a support ring to the substrate. In an embodiment, the coefficient of thermal expansion (CTE) of the reinforcement structure is greater than the CTE of the die. In an embodiment, the reinforcement structure is attached to the top surface of the die before the first package component is attached to the substrate.

[0067] In an embodiment of the present disclosure, a method includes attaching an assembly to a package substrate, wherein the assembly includes a first die; forming a first reinforcement structure on a first corner region of the first die, wherein the first reinforcement structure completely underlaps the first die; and forming a second reinforcement structure on a second corner region of the first die, wherein the second reinforcement structure completely underlaps the first die. In an embodiment, forming the first reinforcement structure on the first corner region of the first die includes attaching the first reinforcement structure to the first die using an adhesive. In an embodiment, forming the first reinforcement structure on the first corner region of the first die includes depositing a metal material on a top surface of the first die. In an embodiment, a sidewall of the first reinforcement structure is coplanar with a sidewall of the first die. In an embodiment, the assembly includes a molding material surrounding the first die, wherein the first reinforcement structure is laterally separated from the molding material by a distance in the range of 0.1 μm to 100 μm. In an embodiment, the assembly includes a second die, and the method includes forming a third reinforcement structure on a third corner region of the second die, wherein the second reinforcement structure completely underlaps the second die. In an embodiment, the first corner region is adjacent to the third corner region.

[0068] In an embodiment of the present disclosure, a package includes: an interposer attached to a package substrate; a first semiconductor die bonded to the interposer; a second semiconductor die bonded to the interposer; a first reinforcement structure attached to a top surface of the first semiconductor die, wherein the first reinforcement structure is adjacent to a first side of the first semiconductor die; a second reinforcement structure attached to a top surface of the second semiconductor die, wherein the second reinforcement structure is adjacent to a first side of the second semiconductor die, wherein the first side of the first semiconductor die faces away from the first side of the second semiconductor die; and a molding material located on the interposer, wherein the molding material is separated from the first reinforcement structure and the second reinforcement structure. In an embodiment, the first reinforcement structure has a rectangular shape in a plan view. In an embodiment, the package includes a cover attached to the first semiconductor die and the second semiconductor die, wherein the cover includes a first groove corresponding to the first reinforcement structure and a second groove corresponding to the second reinforcement structure. In an embodiment, the first reinforcement structure includes a metal material or a ceramic material. In an embodiment, the length of the first reinforcement structure is less than half the length of the first side of the first semiconductor die.

[0069] Some embodiments of the present application provide a method for forming a package, comprising: attaching a first packaging component to a substrate, wherein the first packaging component comprises: an interposer; a plurality of dies located on the interposer; and a molding material surrounding the plurality of dies; and attaching a plurality of reinforcement structures to top surfaces of the plurality of dies, wherein the molding material does not have the plurality of reinforcement structures.

[0070] In some embodiments, the reinforcement structures of the plurality of reinforcement structures are respectively attached to corresponding corners of the die of the plurality of dies. In some embodiments, the corresponding corners of the die are corners of the edges of the plurality of dies that are laterally closer to the interposer relative to the center of the interposer. In some embodiments, the method further includes: attaching a cover to the top surfaces of the plurality of dies, wherein the cover is not in physical contact with the plurality of reinforcement structures. In some embodiments, the method further includes: attaching a second package assembly to the substrate. In some embodiments, the method further includes: attaching a support ring to the substrate. In some embodiments, the coefficient of thermal expansion (CTE) of the plurality of reinforcement structures is greater than the coefficient of thermal expansion of the plurality of dies. In some embodiments, the plurality of reinforcement structures are attached to the top surfaces of the plurality of dies before the first package assembly is attached to the substrate.

[0071] Other embodiments of the present application provide a method for forming a package, comprising: attaching a component to a packaging substrate, wherein the component includes a first tube core; forming a first reinforcement structure on a first corner area of ​​the first tube core, wherein the first reinforcement structure completely overlaps the first tube core; and forming a second reinforcement structure on a second corner area of ​​the first tube core, wherein the second reinforcement structure completely overlaps the first tube core.

[0072] In some embodiments, forming the first reinforcement structure on the first corner region of the first die includes attaching the first reinforcement structure to the first die using an adhesive. In some embodiments, forming the first reinforcement structure on the first corner region of the first die includes depositing a metal material on a top surface of the first die. In some embodiments, the sidewalls of the first reinforcement structure and the sidewalls of the first die are coplanar. In some embodiments, the assembly includes a molding material surrounding the first die, wherein the first reinforcement structure is laterally separated from the molding material by a distance in the range of 0.1 μm to 100 μm. In some embodiments, the assembly includes a second die, and further includes forming a third reinforcement structure on a third corner region of the second die, wherein the second reinforcement structure completely underlaps the second die. In some embodiments, the first corner region is adjacent to the third corner region.

[0073] Still other embodiments of the present application provide a package, comprising: an interposer attached to a package substrate; a first semiconductor die bonded to the interposer; a second semiconductor die bonded to the interposer; a first reinforcement structure attached to a top surface of the first semiconductor die, wherein the first reinforcement structure is adjacent to a first side of the first semiconductor die; a second reinforcement structure attached to a top surface of the second semiconductor die, wherein the second reinforcement structure is adjacent to a first side of the second semiconductor die, wherein the first side of the first semiconductor die faces away from the first side of the second semiconductor die; and a molding material located on the interposer, wherein the molding material is separated from the first reinforcement structure and the second reinforcement structure.

[0074] In some embodiments, the first reinforcement structure has a rectangular shape in a plan view. In some embodiments, the package further comprises a cover attached to the first semiconductor die and the second semiconductor die, wherein the cover comprises a first groove corresponding to the first reinforcement structure and a second groove corresponding to the second reinforcement structure. In some embodiments, the first reinforcement structure comprises a metal material or a ceramic material. In some embodiments, the length of the first reinforcement structure is less than half the length of the first side of the first semiconductor die.

[0075] The features of several embodiments are summarized above so that those skilled in the art can better understand the various aspects of the embodiments of the present disclosure. Those skilled in the art should understand that they can easily use the embodiments of the present disclosure as a basis to design or modify other processes and structures for performing the same purpose and / or achieving the same advantages as the embodiments introduced herein. Those skilled in the art should also appreciate that such equivalent configurations do not deviate from the spirit and scope of the embodiments of the present disclosure, and that they can make various changes, substitutions, and modifications herein without departing from the spirit and scope of the embodiments of the present disclosure.

Claims

1. A method of forming a package, comprising: attaching a first package assembly to a substrate, wherein the first package assembly comprises: Intermediary layer; a plurality of dies disposed on the interposer; and a molding material surrounding the plurality of dies; and A plurality of reinforcement structures are attached to top surfaces of the plurality of dies, wherein the molding material is free of the plurality of reinforcement structures.

2. The method according to claim 1, wherein: The reinforcement structures of the plurality of reinforcement structures are respectively attached to corresponding corners of the dies of the plurality of dies.

3. The method according to claim 2, wherein: The corresponding corners of the die are corners of the plurality of dies that are laterally closer to an edge of the interposer relative to the center of the interposer.

4. The method according to claim 1, further comprising: A cover is attached to the top surfaces of the plurality of dies, wherein the cover is not in physical contact with the plurality of reinforcement structures.

5. The method according to claim 1, further comprising: A second package assembly is attached to the substrate.

6. The method according to claim 1, further comprising: A support ring is attached to the substrate.

7. The method according to claim 1, wherein: The plurality of reinforcement structures have a coefficient of thermal expansion (CTE) greater than a coefficient of thermal expansion (CTE) of the plurality of dies.

8. The method according to claim 1, wherein: The plurality of reinforcement structures are attached to the top surfaces of the plurality of dies before the first package assembly is attached to the substrate.

9. A method of forming a package, comprising: attaching an assembly to a package substrate, wherein the assembly includes a first die; forming a first reinforcement structure on a first corner region of the first die, wherein the first reinforcement structure completely underlaps the first die; and A second reinforcement structure is formed on a second corner region of the first die, wherein the second reinforcement structure completely underlaps the first die.

10. A package comprising: an interposer attached to a package substrate; a first semiconductor die bonded to the interposer; a second semiconductor die bonded to the interposer; a first reinforcement structure attached to a top surface of the first semiconductor die, wherein the first reinforcement structure is adjacent to a first side of the first semiconductor die; a second reinforcement structure attached to a top surface of the second semiconductor die, wherein the second reinforcement structure is adjacent to a first side of the second semiconductor die, wherein the first side of the first semiconductor die faces away from the first side of the second semiconductor die; and A molding material is located on the interposer, wherein the molding material is separated from the first reinforcement structure and the second reinforcement structure.

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