Semiconductor field effect transistor with anti-impact structure

Abstract

The invention relates to the technical field of semiconductor field effect transistors, in particular to a semiconductor field effect transistor with an anti-impact structure, which comprises a first protection main body, a substrate, a second protection main body, a drain electrode D, a grid electrode G and a source electrode S. The drain electrode D, the grid electrode G and the source electrode S are uniformly and fixedly connected to the bottom end of the substrate. According to the invention, the first protection main body and the second protection main body can achieve a sufficient protection effect, and the temperature sensors can detect the temperature of the substrate in use, and when the temperature is detected to be high, the miniature radiator automatically operates to dissipate heat of the substrate, so that the temperature of the substrate can be detected to be high. During heat dissipation, the miniature radiator can blow high-speed gas into the second protective clamping cover, and the gas entering the second protective clamping cover can enter a communicating hole and a first conveying communicating groove through a second conveying communicating groove and a conveying communicating pipe, so that the two sides of the substrate can be subjected to synchronous heat dissipation treatment.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor field effect tubes, in particular to a semiconductor field effect tube with an anti-shock structure. Background Art

[0002] Semiconductor field effect tube, or field effect transistor, is a semiconductor device that uses electric field effect to control the output loop current. It has three electrodes: gate (G), drain (D) and source (S). Its working principle is to change the width of the depletion layer by controlling the voltage between the gate and source, thereby controlling the width of the conductive channel between the drain and source, and then controlling the drain current. In addition to the gate, drain and source, there is usually a substrate (or body, base, bulk, substrate, etc.). The working principle of MOSFET is to use the gate voltage to control the charge distribution in the insulating layer under the gate, thereby controlling the formation and disappearance of the conductive channel, thereby controlling the drain current. Taking the N-channel junction field effect tube as an example, when a negative voltage is applied between the gate and source, the depletion layer is subjected to a reverse voltage, and a positive voltage is applied between the drain and source to form a drain current. The greater the negative voltage between the gate and source, the thicker the depletion region, the narrower the conductive channel, and the smaller the drain current; conversely, the greater the negative voltage between the gate and source, taking the N-channel enhancement MOSFET as an example, when a positive voltage is applied between the gate and source, the free electrons in the body are attracted to move toward the gate to form a conductive channel. As the gate-source voltage increases, the conductive channel becomes wider and the drain current increases. When the gate-source voltage decreases to a certain level, the conductive channel disappears and the MOSFET is cut off. Semiconductor field effect tubes are widely used in various electronic devices.

[0003] The conventional chip thickness of semiconductor field effect tube is 150um, and the aluminum layer thickness on the chip surface is 4um. When the field effect tube is packaged, welded and wired, it is easy to be damaged by the external force of the equipment, resulting in failure of the field effect tube and inability to use. Under the same package chip area, the diameter of the aluminum wire or copper wire on the S pole of the chip is limited, resulting in a large loss impedance of the finished aluminum strip or copper wire. In actual applications, when the device passes a large current, the copper wire impedance will also cause a large heat loss, which will increase the power loss of the product itself. The product will encounter instantaneous high current shocks when used in extreme high temperature environments. The instantaneous temperature of the field effect tube is too high, resulting in device failure and damage. The semiconductor field effect tube will generate heat during use. If the current is too high and the heat dissipation design is not enough to cope with this high current, the field effect tube may generate heat and cause serious failure and damage. In addition, during use, the three electrode pins on the semiconductor field effect tube are set relatively long. Although the connection, installation and use are convenient, the three electrode pins are easily squeezed, deformed and damaged during storage and use, which cannot make the semiconductor field effect tube safe, convenient and stable to use. Therefore, a semiconductor field effect tube is needed to solve the above problems. Summary of the invention

[0004] In view of the problems in the prior art, the present invention provides a semiconductor field effect transistor with an anti-shock structure.

[0005] The technical solution adopted by the present invention to solve its technical problem is: a semiconductor field effect transistor with an impact-proof structure, including a first protective body, a substrate, a second protective body, a drain D, a gate G and a source S, the drain D, the gate G and the source S are evenly fixedly connected to the bottom end of the substrate, the first protective body and the second protective body are fixedly arranged on the outside of the substrate, the second protective body includes a main protective part and an auxiliary protective part, and the auxiliary protective part is arranged at the bottom end of the main protective part.

[0006] Specifically, the first protective body includes a discharge groove, a fixed plate, a first protective card cover, a connecting hole, a first fixed plate, a first extrusion disk, a first conveying connecting groove and a first rotation adjustment threaded column. The first fixed plate is fixedly connected to both sides of the first protective card cover, and the fixed plate is evenly fixedly installed on the upper end of the first protective card cover. The discharge groove is evenly penetrated and opened at the upper end of the first protective card cover, the first conveying connecting groove is evenly opened on both sides of the interior of the first protective card cover, the connecting hole is evenly opened on both sides of the first protective card cover, and the connecting hole is connected with the interior of the first conveying connecting groove, the first rotation adjustment threaded column is evenly threaded and inserted into the first protective card cover, and the first extrusion disk is rotatably connected to the end of the first rotation adjustment threaded column.

[0007] Specifically, the main protective part includes a micro radiator, a second rotation adjustment threaded column, a second protective card cover, a fixed connecting bolt, a second extrusion plate and a second fixed plate. The micro radiator is fixedly installed in the middle of the second protective card cover, the second fixed plate is fixedly connected to both sides of the second protective card cover, the fixed connecting bolt is symmetrically threaded through and inserted into the second fixed plate, the second rotation adjustment threaded column is evenly threaded through and inserted into the second protective card cover, and the second extrusion plate is rotatably connected to the end of the second rotation adjustment threaded column.

[0008] Specifically, a clamping frame is fixedly installed in the middle of both sides of the second protective card cover, and temperature sensors are evenly fixedly installed on the second protective card cover, and the temperature sensors are evenly distributed outside the micro radiator.

[0009] Specifically, connecting card slots are opened on both sides of the bottom end of the second protective card cover, a reset adjustment spring is evenly fixedly installed on the outer side of the bottom end of the second protective card cover, the outer end of the reset adjustment spring is fixedly connected to a connecting disk, an outward expansion card frame is fixedly installed in the middle of the outer end of the connecting disk, a limiting card column is fixedly installed in the middle of the inner end of the connecting disk, and the limiting card column is slidably inserted in the bottom end of the second protective card cover, and the limiting card column is slidably inserted in the connecting card slot, second conveying connecting grooves are opened on both sides of the interior of the second protective card cover, and conveying connecting pipes are evenly fixedly arranged on both sides of the second protective card cover, and the conveying connecting pipes are connected with the second conveying connecting grooves.

[0010] Specifically, the auxiliary protection part includes a limiting baffle plate, a rotating card hole, a connecting card block and a protective cover. The limiting baffle plate is fixedly connected to the middle of the upper end of the protective cover, the connecting card block is fixedly connected to both sides of the upper end of the protective cover, and the rotating card hole is opened through the connecting card block.

[0011] Specifically, the connection card block is clamped inside the connection card slot, and the limit card column is clamped inside the rotation card hole.

[0012] Specifically, the substrate is disposed between the first protective card cover and the second protective card cover, and the first pressing disk and the second pressing disk are in pressing contact with the side end surface of the substrate.

[0013] Specifically, the delivery connecting pipe is inserted into the interior of the connecting hole, a first positioning detection plate is rotatably clamped on the first rotating adjustment threaded column, and a second positioning detection plate is rotatably clamped on the second rotating adjustment threaded column.

[0014] Specifically, a sliding protective cover is uniformly slidably clamped inside the protective cover, an extruded threaded column is uniformly threadedly rotated and plugged on the protective cover, and the end of the extruded threaded column is in extrusion contact with the outer wall of the sliding protective cover.

[0015] Beneficial effects of the present invention:

[0016] 1. The present invention can provide sufficient protection by providing the first protective body and the second protective body, and the various temperature sensors provided can detect the temperature of the substrate in use. When a high temperature is detected, the micro radiator automatically operates to dissipate heat from the substrate. During heat dissipation, the micro radiator can blow high-speed gas into the interior of the second protective card cover. The gas entering the interior of the second protective card cover can enter the connecting hole and the interior of the first conveying connecting groove through the second conveying connecting groove and the conveying connecting pipe, thereby heat dissipating both sides of the substrate synchronously, and the gas can be discharged through the exhaust groove to form a flowing circulating airflow, so that the heat dissipation effect is good.

[0017] 2. According to the present invention, when the drain D, gate G and source S at the bottom of the substrate need to be protected, external clamping tweezers are inserted into the symmetrically distributed external expansion card frame, so that the external expansion card frame and the connecting plate pull the reset adjustment spring outward, so that the limit card column is pulled out from the inside of the connecting card slot, and then the connecting card block is inserted into the inside of the connecting card slot. After the external expansion force on the external expansion card frame is cancelled, the limit card column is reset and inserted into the inside of the rotating card hole, so that the protective cover can be quickly connected to the second protective card cover, so that the set protective cover can protect and protect the drain D, gate G and source S, and the first protective body and the second protective body are convenient to disassemble and install during use. After the squeezing force on the sliding protective cover is cancelled by screwing the extrusion threaded column, the sliding protective cover can be extended and retracted inside the protective cover, so that the overall length of the protective cover and the sliding protective cover can be adjusted and controlled, so that the protective cover and the sliding protective cover can fully protect and protect the drain D, gate G and source S as needed, so that the drain D, gate G and source S can be fully protected during storage and use. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The present invention is further described below in conjunction with the accompanying drawings and embodiments.

[0019] Figure 1 It is a schematic diagram of the main three-dimensional structure of the present invention;

[0020] Figure 2 It is a schematic diagram of the three-dimensional structure of the main body of the present invention from a side view;

[0021] Figure 3 It is a schematic diagram of the main body split structure in the present invention;

[0022] Figure 4 It is a schematic diagram of the structure of the semiconductor field effect tube in the present invention;

[0023] Figure 5 It is a schematic diagram of the structure of the first protection body in the present invention;

[0024] Figure 6 It is a schematic diagram of the three-dimensional structure of the first protection body in the present invention from a side view;

[0025] Figure 7 It is a schematic diagram of the structure of the second protection body in the present invention;

[0026] Figure 8 It is a schematic diagram of the structure of the main protection part in the present invention;

[0027] Fig. 9 It is a schematic diagram of the internal structure of the main protection part in the present invention;

[0028] Fig.10It is a schematic diagram of the bottom structure of the main protection part in the present invention;

[0029] Fig.11 It is a schematic diagram of the structure of the auxiliary protection part in the present invention.

[0030] In the figure: 1-first protective body, 2-substrate, 3-second protective body, 4-drain D, 5-gate G, 6-source S, 7-discharge groove, 8-fixed plate, 9-first protective cover, 10-connecting hole, 11-first fixed plate, 12-first extrusion plate, 13-first conveying connecting groove, 14-first rotation adjustment threaded column, 15-first positioning detection plate, 16-main protective part, 17-auxiliary protective part, 18-temperature sensor, 19-micro radiator, 20-second positioning detection plate , 21-second rotation adjustment threaded column, 22-second protective card cover, 23-clamping frame, 24-fixed connecting bolts, 25-outward expansion card frame, 26-connecting plate, 27-reset adjustment spring, 28-limiting card column, 29-connecting card slot, 30-second extrusion plate, 31-second fixed plate, 32-second conveying connecting groove, 33-conveying connecting pipe, 34-limiting baffle plate, 35-rotation card hole, 36-connecting card block, 37-protective cover, 38-extrusion threaded column, 39-sliding protective cover. DETAILED DESCRIPTION

[0031] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present application.

[0032] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequential order. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present application described here. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device comprising a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0033] The present invention is further described below in conjunction with the accompanying drawings.

[0034] Example 1

[0035] like Figure 1-7 As shown, a semiconductor field effect transistor with an impact-proof structure of the present invention comprises a first protective body 1, a substrate 2, a second protective body 3, a drain D4, a gate G5 and a source S6, wherein the drain D4, the gate G5 and the source S6 are evenly fixedly connected to the bottom end of the substrate 2, the first protective body 1 and the second protective body 3 are fixedly arranged on the outside of the substrate 2, the second protective body 3 comprises a main protective part 16 and an auxiliary protective part 17, the auxiliary protective part 17 is arranged at the bottom end of the main protective part 16, the first protective body 1 comprises a discharge groove 7, a fixing plate 8, a first protective card cover 9, a connecting hole 10, a first fixing plate 11, a first extrusion disk 12, a first conveying connecting groove 13 and a first rotation adjusting threaded column 14, the first fixing plate 11 is fixedly connected to the first protective body 16, and the second protective body 3 is fixedly arranged on the outside of the substrate 2, the second protective body 3 comprises a main protective part 16 and an auxiliary protective part 17, and the auxiliary protective part 17 is arranged at the bottom end of the main protective part 16, the first protective body 1 comprises a discharge groove 7, a fixing plate 8, a first protective card cover 9, a connecting hole 10, a first fixing plate 11, a first extrusion disk 12, a first conveying connecting groove 13 and a first rotation adjusting threaded column 14, and the first fixing plate 11 is fixedly connected to the first protective body 16. On both sides of the protective card cover 9, the fixing plate 8 is evenly fixedly installed on the upper end of the first protective card cover 9, the discharge groove 7 is evenly penetrated and opened at the upper end of the first protective card cover 9, the first conveying connecting groove 13 is evenly opened on both sides of the interior of the first protective card cover 9, the connecting hole 10 is evenly opened on both sides of the first protective card cover 9, and the connecting hole 10 is connected with the interior of the first conveying connecting groove 13, the first rotation adjustment threaded column 14 is evenly threaded and inserted on the first protective card cover 9, and the first extrusion disk 12 is rotatably connected to the end of the first rotation adjustment threaded column 14. The fixed plate 8 is set up so that the substrate 2 with the first protective body 1 and the second protective body 3 fixed on the outside can be conveniently fixed and installed for use, and the set discharge groove 7 plays a role in gas circulation.

[0036] like Figure 8-10As shown, the main protective part 16 includes a micro radiator 19, a second rotation adjustment threaded column 21, a second protective cover 22, a fixed connection bolt 24, a second extrusion disk 30 and a second fixed plate 31. The micro radiator 19 is fixedly installed in the middle of the second protective cover 22, the second fixed plate 31 is fixedly connected to both sides of the second protective cover 22, the fixed connection bolt 24 is symmetrically threaded through and inserted in the second fixed plate 31, the second rotation adjustment threaded column 21 is evenly threaded through and inserted in the second protective cover 22, the second extrusion disk 30 is rotatably connected to the end of the second rotation adjustment threaded column 21, the clamping frame 23 is fixedly installed in the middle of both sides of the second protective cover 22, the temperature sensor 18 is evenly fixedly installed on the second protective cover 22, and the temperature sensor 18 is evenly distributed on the outside of the micro radiator 19, and the bottom of the second protective cover 22 Connecting card slots 29 are provided on both sides of the end, and a reset adjustment spring 27 is evenly fixedly installed on the outer side of the bottom end of the second protective card cover 22. The outer end of the reset adjustment spring 27 is fixedly connected with a connecting disk 26, and an outward expansion card frame 25 is fixedly installed in the middle of the outer end of the connecting disk 26. A limiting card column 28 is fixedly installed in the middle of the inner end of the connecting disk 26, and the limiting card column 28 is slidably inserted in the bottom end of the second protective card cover 22, and the limiting card column 28 is slidably inserted in the inside of the connecting card slot 29. Second conveying and connecting grooves 32 are provided on both sides of the interior of the second protective card cover 22, and conveying and connecting pipes 33 are evenly fixedly arranged on both sides of the second protective card cover 22. The conveying and connecting pipes 33 are connected to the second conveying and connecting grooves 32. The temperature sensor 18 is provided to detect the temperature, so that the operation of the micro radiator 19 can be controlled in real time to perform timely heat dissipation treatment.

[0037] like Fig.11 As shown, the auxiliary protection part 17 includes a limiting baffle plate 34, a rotating card hole 35, a connecting card block 36 and a protective cover 37. The limiting baffle plate 34 is fixedly connected to the middle part of the upper end of the protective cover 37, the connecting card block 36 is fixedly connected to both sides of the upper end of the protective cover 37, and the rotating card hole 35 is penetrated and opened on the connecting card block 36. The limiting baffle plate 34 plays a limiting role. When rotating, the limiting baffle plate 34 is squeezed and contacted with the bottom end of the second protective card cover 22, so that the protective cover 37 can be rotated upward but cannot be rotated downward, thereby fully protecting the drain D4, the gate G5 and the source S6.

[0038] The connection block 36 is clamped in the connection slot 29 , and the limit clamping column 28 is clamped in the rotation clamping hole 35 , playing the role of limit connection.

[0039] The substrate 2 is arranged between the first protective card cover 9 and the second protective card cover 22, and the first extrusion disk 12 and the second extrusion disk 30 are in extrusion contact with the side end surface of the substrate 2 to play the role of extrusion positioning and adjustment.

[0040] The conveying connecting pipe 33 is inserted into the inside of the connecting hole 10, and the first positioning detection plate 15 is rotatably connected to the first rotating adjustment threaded column 14, and the second positioning detection plate 20 is rotatably connected to the second rotating adjustment threaded column 21. The first positioning detection plate 15 and the second positioning detection plate 20 play an auxiliary positioning role.

[0041] The working principle of embodiment 1 is as follows: during use, the substrate 2 can be protected by the first protective body 1 and the second protective body 3. First, the position of the first extrusion disk 12 is adjusted and controlled by screwing the first rotation adjustment threaded column 14, and the position of the second extrusion disk 30 is adjusted and controlled by screwing the second rotation adjustment threaded column 21. The first rotation adjustment threaded column 14 is rotationally clamped with a first positioning detection plate 15, and the second rotation adjustment threaded column 21 is rotationally clamped with a second positioning detection plate 20. The detection ruler is used to ensure that each first positioning detection plate 15 is located on the same horizontal plane, and each second positioning detection plate 20 is located on the same horizontal plane. Then, substrates 2 of different thicknesses can be placed between the inside of the first protective card cover 9 and the second protective card cover 22. At this time, each first positioning detection plate 15 and the second positioning detection plate 20 squeeze the two sides of the substrate 2, and the connecting bolts 24 are fixed by screwing. Inserted between the second fixing plate 31 and the first fixing plate 11, the first fixing plate 11 and the second fixing plate 31 are fixedly connected, so that the first protective card cover 9 and the second protective card cover 22 can be firmly arranged on the substrate 2 to protect the substrate 2, and the temperature sensors 18 arranged can detect the temperature of the substrate 2 in use. When the temperature is detected to be high, the micro radiator 19 automatically operates to dissipate the heat of the substrate 2. When dissipating heat, the micro radiator 19 can blow high-speed gas into the second protective card cover 22. The gas entering the second protective card cover 22 can enter the connecting hole 10 and the first conveying connecting groove 13 through the second conveying connecting groove 32 and the conveying connecting pipe 33, so that the heat dissipation treatment can be performed on both sides of the substrate 2 synchronously, and the gas can be discharged through the discharge groove 7 to form a flowing circulating airflow, so that the heat dissipation effect is good;

[0042] When the drain D4, gate G5 and source S6 at the bottom of the substrate 2 need to be protected, external clamping tweezers are inserted into the symmetrically distributed external expansion card frame 25, so that the external expansion card frame 25 and the connecting plate 26 pull the reset adjustment spring 27 outward, so that the limit card column 28 is pulled out from the inside of the connecting card slot 29, and then the connecting card block 36 is inserted into the inside of the connecting card slot 29. After the external expansion force on the external expansion card frame 25 is cancelled, the limit card column 28 is reset and inserted into the inside of the rotating card hole 35, so that the protective cover 37 can be quickly connected to the second protective card cover 22, so that the set protective cover 37 can protect and protect the drain D4, gate G5 and source S6, and the first protective body 1 and the second protective body 3 are convenient to disassemble and install during use;

[0043] The conventional chip thickness of the field effect tube is 150um, and the aluminum layer thickness on the chip surface is 4um. The chip is easily damaged by external force when the welding equipment is wired. To solve this problem, a high-conductive silver glue is first applied on the front of the chip. The bonding area is slightly larger than the chip according to the chip size. The copper sheet on one side of the chip can exceed 100um. The copper sheet thickness is 200um. It is directly fixed on the front of the chip with conductive glue, and then the aluminum strip or copper wire is welded on the copper sheet. The 200um thick copper sheet can well solve the influence of external force on the equipment and will not cause the field effect tube to be damaged by external force. In order to solve the problem of improving the chip wire bonding ability, reducing the on-state internal resistance, and reducing power loss under the same package chip area, the field effect tube will not fail and be damaged when the high current impact occurs in a high temperature environment, we use double-sided copper sheets on the chip for heat dissipation. Under the same chip size conditions, the wafer chip is directly in contact with the copper sheet through conductive glue. The copper sheet on the front of the chip can be welded with an aluminum strip larger than the original wafer chip size. On the one hand, it can effectively reduce the internal resistance of the aluminum strip or copper wire, and can effectively reduce heat loss compared to conventional products. After the resistance is reduced, the voltage generated on the aluminum strip when the current passes through The drop will be reduced, so that more voltage can be applied to the key working area of ​​the chip to ensure the normal operation of the chip, and reduce the energy loss and temperature rise caused by resistance heating, which is beneficial to the stable operation of the chip and prolonging its service life; on the other hand, it can increase the uniformity of current distribution. The current of conventional chips can only pass through the welding points of aluminum strips or copper wires. Now at least 80% of the area of ​​the wafer chip is in contact with the copper sheet to effectively pass large currents. The larger contact area can make the current more evenly distributed when entering the chip, avoiding current concentration in local areas, reducing local overheating and excessive current density, and preventing reliability problems such as electromigration caused by local overheating or excessive current density. Improve the overall performance and reliability of the chip, and effectively prevent damage to the field effect tube during large current shocks. The double-sided copper heat dissipation process can dissipate heat in time and maintain temperature stability, thereby effectively suppressing the occurrence of thermal runaway and enhancing the stability and reliability of the field effect tube under large current shocks. In large current switching applications, the switching speed and efficiency of the field effect tube are crucial.Good heat dissipation conditions help reduce heat accumulation during the switching process, allowing the field effect tube to complete the switching action faster, improving the switching speed and efficiency. Under high current impact, the field effect tube can respond to the control signal more quickly, reducing energy loss and heat generation during the switching process, thereby enhancing the adaptability to high current impact. High current impact will cause the field effect tube to generate a lot of heat, which will lead to thermal stress between the chip and the packaging structure due to different thermal expansion coefficients. Double-sided copper heat dissipation can make the chip temperature distribution more uniform, reduce the temperature gradient, and thus reduce the generation of thermal stress. Smaller thermal stress helps to protect the connection integrity between the chip and the packaging structure and avoid Problems such as solder joint cracking and chip falling caused by excessive thermal stress have been improved. The structural stability of the field effect tube under large current impact has been improved. The thickness of the finished package is 300um thicker than that of conventional products, and the finished product thickness is 1500um. The increase in thickness means that the heat conduction distance has become relatively longer, but it also provides more "channels" and space for heat dissipation. Heat can be gradually conducted out through thicker materials, especially when suitable heat dissipation packaging materials are used. Heat can be more effectively transferred from the inside of the chip to external heat sinks and other heat dissipation devices, which helps to maintain the field effect tube within a suitable operating temperature range and avoid performance degradation or even damage due to overheating.

[0044] Example 2

[0045] On the basis of Example 1, Fig.11 As shown, a sliding protective cover 39 is uniformly slidably clamped inside the protective cover 37 , an extruded threaded column 38 is uniformly threadedly rotated and inserted on the protective cover 37 , and the end of the extruded threaded column 38 is in extrusion contact with the outer wall of the sliding protective cover 39 .

[0046] When implementing this embodiment, after the squeezing force on the sliding protective cover 39 is removed by screwing the extrusion threaded column 38, the sliding protective cover 39 can be extended and retracted inside the protective cover 37, so that the length of the whole composed of the protective cover 37 and the sliding protective cover 39 can be adjusted and controlled, so that the protective cover 37 and the sliding protective cover 39 can fully shield and protect the drain D4, the gate G5 and the source S6 as needed, so that the drain D4, the gate G5 and the source S6 can be fully protected during storage and use.

[0047] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A semiconductor field effect transistor with an impact-proof structure, comprising a first protective body (1), a substrate (2), a second protective body (3), a drain electrode D (4), a gate electrode G (5) and a source electrode S (6), characterized in that: The drain electrode D (4), the gate electrode G (5) and the source electrode S (6) are evenly and fixedly connected to the bottom end of the substrate (2); the first protective body (1) and the second protective body (3) are fixedly arranged outside the substrate (2); the second protective body (3) comprises a main protective part (16) and an auxiliary protective part (17); the auxiliary protective part (17) is arranged at the bottom end of the main protective part (16).

2. The semiconductor field effect transistor with an anti-shock structure according to claim 1, characterized in that: The first protective body (1) comprises a discharge groove (7), a fixing plate (8), a first protective card cover (9), a connecting hole (10), a first fixing plate (11), a first extrusion plate (12), a first conveying connecting groove (13) and a first rotation adjustment threaded column (14), wherein the first fixing plate (11) is fixedly connected to both sides of the first protective card cover (9), the fixing plate (8) is evenly fixedly installed on the upper end of the first protective card cover (9), the discharge groove (7) is evenly penetrated and opened at the upper end of the first protective card cover (9), the first conveying connecting groove (13) is evenly opened on both sides of the interior of the first protective card cover (9), the connecting hole (10) is evenly opened on both sides of the first protective card cover (9), and the connecting hole (10) is communicated with the interior of the first conveying connecting groove (13), the first rotation adjustment threaded column (14) is evenly threadedly inserted into the first protective card cover (9), and the first extrusion plate (12) is rotationally connected to the end of the first rotation adjustment threaded column (14); The first extrusion disk (12) can be controlled to move forward and backward by screwing the first rotation adjustment threaded column (14).

3. The semiconductor field effect transistor with an anti-shock structure according to claim 2, characterized in that: The main protection part (16) comprises a micro heat sink (19), a second rotation adjustment threaded column (21), a second protection card cover (22), a fixed connection bolt (24), a second extrusion plate (30) and a second fixing plate (31); the micro heat sink (19) is fixedly mounted in the middle of the second protection card cover (22); the second fixing plate (31) is fixedly connected to two sides of the second protection card cover (22); the fixed connection bolt (24) is symmetrically threadedly inserted into the second fixing plate (31); the second rotation adjustment threaded column (21) is uniformly threadedly inserted into the second protection card cover (22); and the second extrusion plate (30) is rotationally connected to the end of the second rotation adjustment threaded column (21); The second extrusion disk (30) can be controlled to move forward and backward by screwing the second rotation adjustment threaded column (21).

4. The semiconductor field effect transistor with an anti-shock structure according to claim 3, characterized in that: A clamping frame (23) is fixedly mounted in the middle of both sides of the second protective card cover (22), and temperature sensors (18) are evenly fixedly mounted on the second protective card cover (22), and the temperature sensors (18) are evenly distributed outside the micro radiator (19).

5. The semiconductor field effect transistor with an anti-shock structure according to claim 4, characterized in that: The bottom end of the second protective card cover (22) is provided with connecting card grooves (29) on both sides, and a reset adjustment spring (27) is evenly fixedly installed on the outer side of the bottom end of the second protective card cover (22). The outer end of the reset adjustment spring (27) is fixedly connected to a connecting disk (26). An outward expansion card frame (25) is fixedly installed in the middle of the outer end of the connecting disk (26). A limit card column (28) is fixedly installed in the middle of the inner end of the connecting disk (26), and the limit card column (28) is slidably inserted in the bottom end of the second protective card cover (22), and the limit card column (28) is slidably inserted in the inside of the connecting card groove (29). The second protective card cover (22) is provided with second conveying and connecting grooves (32) on both sides, and conveying and connecting pipes (33) are evenly fixedly arranged on both sides of the second protective card cover (22). The conveying and connecting pipes (33) are connected with the second conveying and connecting grooves (32). The external clamping tweezers are inserted into the symmetrically distributed external expansion card frame (25), so that the external expansion card frame (25) and the connecting plate (26) pull the reset adjustment spring (27) outward, so that the limit card column (28) is pulled out from the inside of the connecting card slot (29).

6. The semiconductor field effect transistor with an anti-shock structure according to claim 5, characterized in that: The auxiliary protection part (17) comprises a limiting baffle plate (34), a rotating clamping hole (35), a connecting clamping block (36) and a protective cover (37); the limiting baffle plate (34) is fixedly connected to the middle part of the upper end of the protective cover (37); the connecting clamping block (36) is fixedly connected to both sides of the upper end of the protective cover (37); and the rotating clamping hole (35) is penetrated and opened on the connecting clamping block (36).

7. The semiconductor field effect transistor with an anti-shock structure according to claim 6, characterized in that: The connection clamp block (36) is clamped inside the connection clamp groove (29), and the limit clamp column (28) is clamped inside the rotation clamp hole (35).

8. The semiconductor field effect transistor with an anti-shock structure according to claim 7, characterized in that: The substrate (2) is arranged between the first protective card cover (9) and the second protective card cover (22), and the first extrusion disk (12) and the second extrusion disk (30) are in extrusion contact with the side end surface of the substrate (2).

9. The semiconductor field effect transistor with an anti-shock structure according to claim 8, characterized in that: The conveying connecting pipe (33) is inserted into the interior of the connecting hole (10); the first rotating adjustment threaded column (14) is rotatably clamped with a first positioning detection plate (15); and the second rotating adjustment threaded column (21) is rotatably clamped with a second positioning detection plate (20).

10. The semiconductor field effect transistor with an anti-shock structure according to claim 9, characterized in that: The interior of the protective cover (37) is uniformly slidably clamped with a sliding protective cover (39), and the protective cover (37) is uniformly threadedly rotated with an extruded thread column (38), and the end of the extruded thread column (38) is in extrusion contact with the outer wall of the sliding protective cover (39); By screwing the extrusion threaded column (38) to remove the extrusion force on the sliding protective cover (39), the sliding protective cover (39) can be extended and retracted inside the protective cover (37), so that the length of the whole composed of the protective cover (37) and the sliding protective cover (39) can be adjusted and controlled, so that the protective cover (37) and the sliding protective cover (39) can fully protect and protect the drain D (4), the gate G (5) and the source S (6) as needed, so that the drain D (4), the gate G (5) and the source S (6) can be fully protected during storage and use.

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