Packaging structure

Abstract

The embodiment of the invention provides a packaging structure. The packaging structure comprises a rewiring layer, an organic insulating layer, a connecting metal layer and a component. Wherein the rewiring layer comprises a lead. The organic insulating layer is located on one side of the rewiring layer. The connecting metal layer comprises a connecting part which is electrically connected with the lead. The surface of the connecting part deviating from the lead is a first surface, the surface of the organic insulating layer deviating from the rewiring layer is a second surface, and the first surface is located at one side of the second surface deviating from the rewiring layer. The first surface is circular or polygonal. The component comprises a wiring terminal, and the wiring terminal is electrically connected with the connecting part through a welding material. The packaging structure provided by the embodiment of the invention is used for solving the problem that enough large area needs to be reserved on a rewiring layer when a component is mounted in a chip packaging process.

Description

Technical Field

[0001] The present application relates to the field of chip packaging, and in particular to a packaging structure. Background Art

[0002] With the development of mobile communication technology, the demand for high-performance, low-power mobile application processors and high-computing chips is increasing. In this context, fan-out packaging is gradually becoming the mainstream choice for a variety of chip packaging, such as smartphone SOC (System on Chip) packaging. Fan out packaging technology can greatly increase IO density, shorten signal transmission paths, reduce current loss, and enhance chip heat dissipation performance. Therefore, the application field of Fan out packaging technology is becoming more and more extensive. With the development of Fan out packaging technology and the expansion of its application fields, in order to further improve the performance of the chip, components will be mounted in high IO density Fan out packaging.

[0003] However, when mounting components in a fan-out package, in order to pursue a thinner and lighter package, the components also tend to be thinner and lighter, which results in the need to reserve a large enough area in the rewiring layer during the component mounting process to ensure the stability of the electrical connection between the components and the rewiring layer. This will waste circuit routing space and increase design difficulty. Summary of the invention

[0004] In view of this, an embodiment of the present application provides a packaging structure to improve the problem that a sufficiently large area needs to be reserved for the wiring layer when mounting components during the chip packaging process.

[0005] An embodiment of the present application provides a packaging structure, including: a rewiring layer, an organic insulating layer, a connecting metal layer and components. The rewiring layer includes a lead. The organic insulating layer is located on one side of the rewiring layer. The connecting metal layer includes a connecting portion, and the connecting portion is electrically connected to the lead. The surface of the connecting portion facing away from the lead is the first surface, the surface of the organic insulating layer facing away from the rewiring layer is the second surface, and the first surface is located on the side of the second surface facing away from the rewiring layer. The shape of the first surface is circular or polygonal. The components include a wiring terminal, and the wiring terminal is electrically connected to the connecting portion through a welding material.

[0006] In one embodiment of the present application, the organic insulating layer includes a first organic insulating layer, the first organic insulating layer includes a plurality of first openings. The rewiring layer includes a first rewiring layer, the lead includes a first lead, the first lead is located in the first rewiring layer, and the first lead is located on one side of the first opening. The connecting metal layer includes a first connecting metal layer, the connecting portion includes a first connecting portion, and the first connecting portion is located in the first connecting metal layer. The first connecting portion is partially located in the first opening and contacts the first lead.

[0007] In one embodiment of the present application, the organic insulating layer includes a second organic insulating layer, the second organic insulating layer includes a plurality of second openings. The rewiring layer includes a second rewiring layer, the lead includes a second lead, the second lead is located in the second rewiring layer, the connection metal layer includes a second connection metal layer, the connection portion includes a second connection portion, the second connection portion is located in the second connection metal layer. The second connection portion is located at one side of the second opening, and the second lead portion is located in the second opening and in contact with the second connection portion.

[0008] In one embodiment of the present application, the packaging structure further includes: a bare chip and a solder column, wherein the solder column is electrically connected to the bare chip, and the connecting metal layer further includes a chip connecting portion, wherein the solder column is electrically connected to the chip connecting portion.

[0009] In one embodiment of the present application, the component includes a front-mounted component, and the connection terminal of the front-mounted component is electrically connected to the first connection portion through a welding material. The packaging structure also includes: an injection molding layer, the injection molding layer wraps the front-mounted component, and the injection molding layer fills the gap between the front-mounted component and the first organic insulating layer.

[0010] In one embodiment of the present application, the number of sides of the polygon is greater than or equal to six.

[0011] In one embodiment of the present application, the first connecting portion includes a body portion and a boss portion, the body portion is located in the first opening, and the boss portion is located on a side of the body portion away from the first lead and protrudes from the second surface.

[0012] In one embodiment of the present application, a vertical distance D between the first surface and the second surface satisfies: 8um≤D≤23um.

[0013] In one embodiment of the present application, the main body is filled in the first opening and a side surface of the main body is in contact with a side surface of the second opening.

[0014] In one embodiment of the present application, the rewiring layer includes a third rewiring layer, and the third rewiring layer is located between the first rewiring layer and the second rewiring layer. The third rewiring layer is used to realize electrical connection between the first rewiring layer and the second rewiring layer.

[0015] In the embodiment of the present application, the first surface is located on the side of the second surface away from the rewiring layer, that is, one surface of the connection portion completely protrudes from the organic insulating layer, so along the arrangement direction perpendicular to the rewiring layer and the organic insulating layer, the distance between the first surface and the second surface is greater than zero. Therefore, the connection portion will form a boss on the organic insulating layer, and the boss is used to achieve welding with components, so only an area that can be well electrically connected to the wiring terminal needs to be reserved in the rewiring layer, that is, the opening area of ​​the organic insulating layer only needs to ensure that the connection portion can make good electrical contact with the wiring terminal, thereby saving the routing area of ​​the rewiring layer and reducing the design difficulty. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0017] Figure 1 A schematic diagram of a packaging structure provided in an embodiment of the present application;

[0018] Figure 2 A schematic diagram of a packaging structure provided in an embodiment of the present application;

[0019] Figure 3 A schematic diagram of a packaging structure provided in an embodiment of the present application;

[0020] Figure 4 A schematic diagram of a first surface provided in an embodiment of the present application;

[0021] Figure 5 A schematic diagram of a first surface provided in an embodiment of the present application;

[0022] Figure 6 A schematic diagram of a first surface provided in an embodiment of the present application;

[0023] Figure 7 A schematic diagram of a first surface provided in an embodiment of the present application;

[0024] Figure 8 A schematic diagram of a first connecting portion provided in an embodiment of the present application;

[0025] Fig. 9 A schematic diagram of a packaging method provided in an embodiment of the present application;

[0026] Fig.10 A flow chart of generating an organic insulating layer and generating a rewiring layer on the organic insulating layer provided in an embodiment of the present application;

[0027] Fig.11 A flow chart of generating a connection metal layer in a target area and patterning the connection metal layer to obtain a connection portion, wherein the connection portion is electrically connected to a rewiring layer, provided in an embodiment of the present application;

[0028] Fig.12 A flow chart of mounting components on a connecting portion by welding material is provided in an embodiment of the present application.

[0029] Description of labels:

[0030] 100. Packaging structure; 101. Components; 110. Rewiring layer; 111. First rewiring layer; 1111. First lead; 112. Second rewiring layer; 113. Third rewiring layer; 120. Organic insulating layer; 121. First organic insulating layer; 122. Second organic insulating layer; 123. Third organic insulating layer; 124. Fourth organic insulating layer; 130. Connecting metal layer; 131. First connecting metal layer; 1311. First connecting portion; 132. Second connecting metal layer; 1321. Second connecting portion; 133. Third connecting metal layer; 1331. Chip connecting portion; 134. Fourth connecting metal layer; 1341. Fourth connecting portion; 140. Injection molding layer; 141. Inner injection molding layer; 142. Outer injection molding layer. DETAILED DESCRIPTION

[0031] In order to better understand the technical solution of the present application, the embodiments of the present application are described in detail below with reference to the accompanying drawings.

[0032] It should be clear that the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present application.

[0033] The terms used in the embodiments of the present application are only for the purpose of describing specific embodiments, and are not intended to limit the present application. The singular forms "a", "said" and "the" used in the embodiments of the present application and the appended claims are also intended to include plural forms, unless the context clearly indicates other meanings.

[0034] It should be understood that the term "and / or" used in this article is only a description of the association relationship of associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this article generally indicates that the associated objects before and after are in an "or" relationship.

[0035] Before a detailed introduction to the embodiments of the present application, the terms that are applied or may be applied to the embodiments of the present application are first explained.

[0036] As components become thinner and lighter, their terminals will be very short, close to a sheet structure, so that the height of the component terminals is lower than the height of the organic insulating layer. Therefore, during mounting, in order to ensure good electrical connectivity between the component and the rewiring layer, an opening of a size similar to the component area needs to be opened in the organic insulating layer, otherwise the component terminals will not be able to make good contact and connection with the rewiring layer.

[0037] At the same time, due to the thinness of components, the gap under the components (for example, the gap between the components and the rewiring layer) will be very small after the components are mounted. When the colloid is filled using capillary adsorption, the gap cannot be completely filled, that is, there is a cavity between the component and the rewiring layer, resulting in bubble-shaped voids inside the package, and ultimately causing the chip to rupture or short-circuit due to heat or moisture.

[0038] In order to improve the aforementioned problem, an embodiment of the present application provides a packaging structure.

[0039] See also Figure 1 or Figure 2 or Figure 3 The embodiment of the present application provides a packaging structure 100, which includes: a rewiring layer 110, an organic insulating layer 120, a connecting metal layer 130 and a component 101. The rewiring layer 110 is used to realize the wiring of the connecting wire. The rewiring layer 110 includes a lead. The organic insulating layer 120 is located on one side of the rewiring layer 110. The organic insulating layer 120 is used to protect the rewiring layer 110 and perform electrical insulation. The connecting metal layer 130 is used to perform electrical transfer between the rewiring layer 110 and the component 101, that is, the rewiring layer 110 is electrically connected to the component 101 through the connecting metal layer 130. The connecting metal layer 130 includes a connecting portion, and the connecting portion is electrically connected to the lead 111 correspondingly, wherein the corresponding electrical connection means that the connecting portion is electrically connected to the lead that needs to be electrically connected to it. The surface of the connecting portion facing away from the lead is the first surface, and the surface of the organic insulating layer facing away from the rewiring layer is the second surface, and the first surface is located on the side of the second surface facing away from the rewiring layer 110. The component 101 includes a connection terminal, and the connection terminal of the component 101 is electrically connected to a corresponding connection portion through a welding material 102. In a possible implementation, the welding material 102 is tin.

[0040] See also Figures 4 to 7 In one embodiment of the present application, the shape of the first surface is circular or polygonal. A circular or polygonal shape can increase area utilization and help reduce the package size.

[0041] In the embodiment of the present application, the component 101 includes but is not limited to passive components, and the passive components include but are not limited to capacitors. The wiring terminals of the component 102 are used to make electrical connections with the outside world. In a possible implementation, the wiring terminals of the component 101 include a positive terminal and a negative terminal. The first surface is located on the side of the second surface away from the rewiring layer, that is, a surface of the connecting portion completely protrudes from the organic insulating layer, so along the arrangement direction perpendicular to the rewiring layer and the organic insulating layer, the distance between the first surface and the second surface is greater than zero. Therefore, the connecting portion will form a boss on the organic insulating layer, and the boss is used to achieve welding with the components. Therefore, it is only necessary to reserve an area in the rewiring layer that can be well electrically connected to the wiring terminal, that is, the opening area of ​​the organic insulating layer only needs to ensure that the connecting portion can make good electrical contact with the wiring terminal, thereby saving the routing area of ​​the rewiring layer and reducing the design difficulty.

[0042] In the embodiment of the present application, the height of the connecting portion protruding from the organic insulating layer can be controlled by the process. Therefore, by controlling the process parameters, after the components are mounted, there can be sufficient gap under the components, which is conducive to the gap being completely filled with colloid under the action of capillary adsorption, thereby reducing the probability of voids existing inside the package.

[0043] At the same time, during the process of UPAD (Under Bump Meta l Pad, metal plating under the solder ball) under the electroplating core particle (i.e., Die), if the photoresist is left in the opening of the organic insulating layer used to realize the electrical connection of the component terminal, it will cause the connection line to short-circuit or reduce the stability of the connection line. The height of the connecting part protruding from the organic insulating layer can effectively avoid the residual photoresist being left in the opening of the organic insulating layer used to realize the electrical connection of the component terminal during the process of UPAD under the electroplating core particle (i.e., Die).

[0044] In addition, the thickness of the rewiring layer is relatively small, and the connection part can effectively avoid direct contact between the rewiring layer and the welding material, thereby reducing the probability of rewiring layer rupture and circuit breaking caused by thermal forces during component mounting, and ultimately improving the product yield.

[0045] In one possible implementation, the number of sides of the polygon is greater than or equal to six. Alternatively, in another possible implementation, the polygon is a regular polygon, and the number of sides of the regular polygon is greater than or equal to six. Figure 5 As shown, the polygon is a regular hexagon; or Figure 6 As shown, the polygon is a regular octagon; or Figure 7 As shown, the polygon is a regular dodecagon, etc.

[0046] In one embodiment of the present application, the organic insulating layer refers to a collective term for a plurality of organic insulating layers, the redistribution layer refers to a collective term for a plurality of redistribution layers, and the lead wire also refers to a collective term for a plurality of lead wires.

[0047] For ease of distinction, multiple organic insulation layers can be sorted and distinguished using the first organic insulation layer 121, the second organic insulation layer 122, ... etc., multiple redistribution layers can be sorted and distinguished using the first redistribution layer 111, the second redistribution layer 112, ... etc., and multiple leads can be sorted and distinguished using the first lead, the second lead, ... etc.

[0048] See also Figure 1 In one implementation of the present embodiment, the organic insulating layer 120 includes a first organic insulating layer 121, and the first organic insulating layer 121 includes a plurality of first openings. The rewiring layer 110 includes a first rewiring layer 111, and the lead includes a first lead, and the first lead is located in the first rewiring layer 111, and the first lead is located on one side of the first opening. The connection metal layer 131 includes a first connection metal layer 131, and the connection portion includes a first connection portion 1311, and the first connection portion 1311 is located in the first connection metal layer 131. The first connection portion 1311 is partially located in the first opening and contacts the first lead.

[0049] In this implementation, the first organic insulating layer 121 is used to insulate and protect the first rewiring layer, and expose the first lead through the first opening. A portion of the first connection portion in the first connection metal layer is located in the first opening and is in contact with and electrically connected to the first lead, and the rest of the first connection portion is located outside the first opening, for example, located on a side of the first opening away from the first lead, that is, protruding from the edge of the first opening. The first connection portion is partially located in the first opening and is in contact with and electrically connected to the first lead, which can ensure the stability of the electrical connection between the first connection portion and the first lead.

[0050] In the process production, it is necessary to generate the first wiring layer first, then generate the first organic insulating layer 121, and then open the first opening in the first organic insulating layer 121 through an etching process. Therefore, the direction of the first wiring layer toward the first organic insulating layer 121 can be defined as the front direction. In a possible implementation of this embodiment, the second surface can be the front surface in the package, and the component 101 electrically connected to the first connection portion 1311 through the welding material can be named as the front-mounted component 101a. Therefore, the front-mounted component 101a refers to the component that is mounted on the front surface.

[0051] Combination Figure 3 and Figure 8In a possible implementation of the present embodiment, the first connection portion 1311 includes a main body portion 13111 and a boss portion 13112, the main body portion 13112 is located in the first opening, and the boss portion 13112 is located on a side of the main body portion 13111 away from the first lead 1111 and protrudes from the second surface.

[0052] In this implementation, the main body 13111 and the boss 13112 can be manufactured in the same process, so the main body and the boss can be an integrally formed structure. The main body 13111 is located in the first opening and is in contact with and electrically connected to the first lead 1111. The main body 13111 enables electrical connection between the boss 13112 and the first lead 1111. The boss 13112 makes the first connection portion 1311 protrude from the second surface. Therefore, when applying components, since the boss 13112 protrudes from the second surface, the boundary of the boss 13112 is clearer, and the center of the boss 13112 is easy to identify and align, thereby reducing the probability of alignment deviation exceeding the preset range when applying components, thereby improving the mounting yield of components.

[0053] In one embodiment of the present application, the lead includes a plurality of first lead wires 1111, and the first connection metal layer 131 includes a plurality of first connection portions 1311. The number of the first lead wires 1111 and the number of the first connection portions 1311 are equal to the number of the first openings, and the three correspond to each other one by one, that is, there is one first lead wire 1111 outside one first opening, and the inside thereof includes one first connection portion 1311. Along the arrangement direction of the first organic insulating layer 121 and the first redistribution layer 111, the first lead wire 1111 covers the first edge of the first opening, and the first edge of the first opening refers to the edge of the first opening that contacts the first lead wire 1111.

[0054] In a possible implementation of this embodiment, there is at least one first sub-lead and at least one second sub-lead in the plurality of first leads 1111, and the first sub-lead and the second sub-lead are isolated from each other and do not contact each other. For example, the first sub-lead is electrically connected to the positive electrode of the first component, and the second sub-lead is electrically connected to the negative electrode of the first component.

[0055] In this implementation, due to the boss design of the first connection part 1311, by controlling the opening area of ​​the first opening, it can be achieved that the first connection part 1311 electrically connected to the first sub-lead and the first connection part 1311 electrically connected to the second sub-lead do not contact each other and are isolated from each other. This can effectively reduce the exposed area of ​​the rewiring layer, reduce the design difficulty, and fundamentally solve the problem of too small a gap under the components.

[0056] In a possible implementation of this embodiment, the body portion 13112 is filled in the first opening, and the side surface of the body portion contacts the side surface of the first opening, that is, the side wall of the body portion contacts the side wall of the first opening.

[0057] In this implementation, the first opening is completely filled with the main body, thereby reducing the probability of bubble-type voids existing in the first opening during the packaging process, and ensuring that the packaged chip has more stable performance and longer life during use.

[0058] See also Figure 2 or Figure 3 In one embodiment of the present application, the organic insulating layer 120 includes a second organic insulating layer 122, and the second organic insulating layer 122 includes a plurality of second openings. The rewiring layer includes a second rewiring layer 112, the lead includes a second lead 1121, and the second lead 1121 is located in the second rewiring layer 112, the connection metal layer 130 includes a second connection metal layer 132, and the connection portion includes a second connection portion 1321, and the second connection portion 1321 is located in the second connection metal layer 132. The second connection portion 1321 is located at one side of the second opening, and the second lead 1121 is partially located in the second opening and in contact with the second connection portion 1321.

[0059] In this embodiment, the second organic insulating layer 122 is used to support the second rewiring layer 112, and the second lead 1121 is used to realize the electrical connection between the second rewiring layer 112 and the components. In the process flow, the second organic insulating layer 122 is first generated, then the second rewiring layer 112 is generated, and then the second connection metal layer 132 is generated, and the second connection metal layer 132 and the second rewiring layer 112 are respectively located on both sides of the second organic insulating layer 122. According to the order of process generation, the direction of the second organic insulating layer 122 toward the second rewiring layer 112 can be defined as the front direction, and the direction of the second organic insulating layer 122 away from the second rewiring layer 112 can be defined as the back direction. Therefore, the second connection metal layer 132 is located on the back of the organic insulating layer 120, so the component 101 electrically connected to the second connection portion 1321 through the solder material can be called a back-mounted component 101b. That is, a back-mounted component refers to a component that is mounted on the back.

[0060] In this embodiment, a raised second connection metal layer 132 is generated on the back side of the second organic insulating layer 122, which can prevent the solder from directly contacting the second redistribution layer 112, thereby reducing the impact of the force on the second redistribution layer 112 during the welding process and ensuring the yield of the product.

[0061] In a possible implementation of this embodiment, the lead includes a plurality of second leads 1121, the second connection metal layer 132 includes a plurality of second connection portions 1321, and the number of the second connection portions 1321, the number of the second leads 1121, and the number of the second openings are equal, and the three correspond to each other. That is, one opening includes one second lead 1121 and one second connection portion 1321 is arranged outside. Along the arrangement direction of the second organic insulating layer 122 and the second redistribution layer 112, the second connection portion 1321 covers the first edge of the second outlet, and the first edge of the second outlet is the edge where the second outlet contacts the second connection portion 1321.

[0062] In a possible implementation of this embodiment, the plurality of second leads 1121 include a third sub-lead and a fourth sub-lead, and the third sub-lead is isolated from and does not contact the fourth sub-lead. For example, the third sub-lead is used to electrically connect the positive electrode of the back-mounted component, and the fourth sub-lead is used to electrically connect the negative electrode of the back-mounted component.

[0063] See also Figure 3 In one embodiment of the present application, the packaging structure further includes: a bare chip 103 and a plurality of solder pillars 104. The bare chip 103 includes a plurality of connection ports, and the connection ports are electrically connected to the solder pillars 104. The solder pillars 104 include copper pillars and soldering materials attached to the copper pillars. Among them, the connecting metal layer 130 also includes a chip connection portion 1331; the solder pillars 104 are electrically connected to the chip connection portion 1331, and the chip connection portion 1331 is electrically connected to the corresponding lead, that is, the solder pillars 104 are electrically connected to the rewiring layer through the chip connection portion 1331.

[0064] In the embodiment of the present application, the solder column 104 is electrically connected to the rewiring layer 130 through the chip connection portion 1331, which means that the rewiring layer 130 is connected to the welding material through the chip connection portion, thereby avoiding direct contact between the chip connection portion 1331 and the welding material 102, thereby reducing the probability of warping or breaking of the rewiring layer 130 due to heat during the welding process.

[0065] The structure of the chip connection part 1331 can refer to the structure of the first connection part 1311. For example, the surface of the chip connection part 1331 away from the lead is the first surface, and the first surface of the chip connection part 1331 is located on the side of the second surface away from the lead. The chip connection part 1331 protrudes from the second surface of the organic insulating layer 120. A through hole is provided on the organic insulating layer 120, and the chip connection part 1331 includes a body part and a protruding part, wherein the body part of the chip connection part 1331 is located in the corresponding through hole, and the protruding part of the chip connection part 1331 is located outside the corresponding opening and protrudes from the second surface of the organic insulating layer 120. In a possible implementation, the through hole corresponding to the body part of the chip connection part 1331 is completely filled by the body part of the chip connection part 1331. This prevents the existence of bubble-type voids in the package.

[0066] The shape of the first surface of the chip connecting portion 1331 is circular or polygonal, wherein the polygon is a regular polygon, and the number of sides of the regular polygon is greater than or equal to six, thereby improving area utilization.

[0067] Based on actual needs, the chip connection portion 1331 and the first connection portion 1311 can be manufactured in the same process or in different processes. Along the arrangement direction of the organic insulating layer 120 and the redistribution layer, when the height of the chip connection portion is the same as the height of the first connection portion 1311, the two can be manufactured in the same process.

[0068] When the height of the chip connection portion is different from the height of the first connection portion 1311 along the arrangement direction of the organic insulating layer 120 and the rewiring layer, the two need to be manufactured in different processes. Therefore, the connection metal layer 130 includes a third connection metal layer 133, the connection portion includes a chip connection portion 1331, the chip connection portion 1331 is located in the third metal layer 133, and the solder column 104 is electrically connected to the chip connection portion 1331.

[0069] See also Figure 3 In one embodiment of the present application, the packaging structure 100 further includes: an injection molding layer 140 , the injection molding layer 140 wraps the front-mounted components, and the injection molding layer 140 fills the gap between the front-mounted components and the first organic insulating layer 121 .

[0070] In an embodiment of the present application, the package structure 100 further includes an injection molding layer 140 , which wraps the bare chip 103 and fills the gap between the bare chip 103 and the first organic insulating layer 121 .

[0071] In one embodiment of the present application, the first surface is the surface of the first connection portion 1311 away from the first lead 1111, or the first surface is the surface of the second connection portion 1321 away from the second lead 1121, and the shape of the first surface is circular or polygonal. The circular or polygonal shape can increase the area utilization rate and help reduce the package size. The polygon is a regular polygon, and the number of sides of the regular polygon is greater than or equal to six. For example, the polygon is a regular hexagon, a regular octagon, or a regular dodecagon.

[0072] In one embodiment of the present application, the vertical distance D between the first surface and the second surface satisfies: 8um≤D≤23um. For example, the vertical distance D between the first surface and the second surface is 8.1um or 10.1um. This distance can ensure that there is enough space to fill the injection molding layer. At the same time, this distance can make the connection part less likely to break, ensuring the stability of the circuit connection.

[0073] In one embodiment of the present application, the connection metal layer may be made of a single metal material, such as copper. The connection metal layer may include multiple metal layers, such as a copper layer, a nickel layer, and a gold layer. For example, the vertical distance D between the first surface and the second surface is 8.1um, wherein the thickness of the copper layer is 5um, the thickness of the nickel layer is 3um, and the thickness of the gold layer is 0.1um; or for example, the vertical distance D between the first surface and the second surface is 10.1, wherein the thickness of the copper layer is 6um, the thickness of the nickel layer is 4um, and the thickness of the gold layer is 0.1um.

[0074] like Figure 3 As shown, in one embodiment of the present application, the organic insulating layer 120 includes: a first organic insulating layer 121, a second organic insulating layer 122, a third organic insulating layer 123 and a fourth organic insulating layer 124. The rewiring layer includes a first rewiring layer 111, a second rewiring layer 112 and a third rewiring layer 113. The second organic insulating layer 122 includes a plurality of second openings. The second rewiring layer 112 is located on one side of the second organic insulating layer 122, and the second rewiring layer 112 includes a second lead 1121, and the second lead 1121 is at least partially located in the second opening. The third organic insulating layer 123 is located on a side of the second rewiring layer 112 away from the second organic insulating layer 122. The third rewiring layer 113 is located on a side of the third organic insulating layer 123 away from the second organic insulating layer 122, and the third rewiring layer 113 is electrically connected to the second rewiring layer 112 via a hole. The fourth organic insulating layer 124 is located on the side of the third rewiring layer 113 away from the second organic insulating layer 122, the first rewiring layer 111 is located on the side of the fourth organic insulating layer 124 away from the second organic insulating layer 122, and the first organic insulating layer 121 is located on the side of the first rewiring layer 111 away from the second organic insulating layer 122. The first rewiring layer 111 is electrically connected to the second rewiring layer 112 via holes.

[0075] like Figure 3 As shown, in one embodiment of the present application, the package structure further includes: a solder ball 105, the connection metal layer 130 includes a fourth connection metal layer 134, and the fourth metal connection layer is located on the side of the second organic insulating layer 122 away from the second redistribution layer 112. The connection portion includes a fourth connection portion 1341, and the fourth connection portion 1341 is located in the fourth connection metal layer 134. The second redistribution 112 includes a third lead 1122, and the fourth connection portion 1341 is electrically connected to the third lead 1122. The fourth connection portion 1341 is electrically connected to the solder ball 105.

[0076] See also Fig. 9 The present application also provides a packaging method, which is used to form the packaging structure provided by the above embodiment. The packaging method includes:

[0077] S100, generating an organic insulating layer, and generating a rewiring layer on the organic insulating layer.

[0078] S200, generating a connection metal layer in a target area, and patterning the connection metal layer to obtain a connection portion, wherein the connection portion is electrically connected to the rewiring layer.

[0079] S300, mounting components on the connection portion by welding material.

[0080] In the present embodiment, since the organic insulating layer is a general term for multiple organic insulating layers, the rewiring layer is a general term for multiple rewiring layers, and the connecting metal layer is a general term for multiple connecting metal layers, the growth sequence of a single organic insulating layer and a single rewiring layer is interspersed according to a specific process, that is, an organic insulating layer is generated, a rewiring layer is generated, and then another organic insulating layer is generated, and then another wiring layer is generated, and so on.

[0081] In the specific implementation process, the packaging method of the packaging structure is described in more detail by taking the organic insulating layer including: the first organic insulating layer, the second organic insulating layer, the third organic insulating layer and the fourth organic insulating layer, and the redistribution layer including the first redistribution layer, the second redistribution layer and the third redistribution layer as an example.

[0082] like Fig.10 As shown, generating an organic insulating layer, and generating a rewiring layer on the organic insulating layer includes:

[0083] S110 , generating a second organic insulating layer, and opening a second opening in the second organic insulating layer.

[0084] The specific implementation process of step S110 is: generating a second organic insulating layer on the carrier sheet, coating a photoresist, then exposing and developing the photoresist; and etching and curing the second organic insulating layer to obtain a second opening.

[0085] S120, generating a second redistribution layer on the second organic insulating layer, and performing patterning on the second redistribution layer.

[0086] The specific implementation process of step S120 is: sputtering a seed layer (for example, a copper seed layer) on the second organic insulating layer, and then electroplating, the electroplating can make the second opening completely filled, and the electroplating is stopped when the target thickness is reached, and then etching is performed to obtain a patterned second rewiring layer. In a possible implementation, the etching can be dry etching.

[0087] S130, generating a third organic insulating layer on the second redistribution layer, and opening a via hole in the third organic insulating layer.

[0088] The implementation process of step S130 is: generating a second redistribution layer, coating a photoresist, and then exposing and developing the photoresist; and etching and curing the third organic insulating layer to obtain a via hole.

[0089] S140, generating a third rewiring layer on the third organic insulating layer, and patterning the third rewiring layer, wherein the third rewiring layer is electrically connected to the second rewiring layer through the via hole.

[0090] The implementation process of step S140 may refer to step S120, which will not be described in detail here.

[0091] S150, generating a fourth organic insulating layer on the third wiring layer, and opening a via hole in the fourth organic insulating layer.

[0092] The implementation process of step S150 may refer to step S130, which will not be described in detail here.

[0093] S160, generating a first rewiring layer on the fourth organic insulating layer, and patterning the first rewiring layer, wherein the first rewiring layer includes a first lead and is electrically connected to the third wiring layer through a via hole.

[0094] The implementation process of step S160 may refer to step S120, which will not be described in detail here.

[0095] S170 , generating a first organic insulating layer on the first redistribution layer, and opening a first opening in the first organic insulating layer.

[0096] The implementation process of step S170 may refer to step S130, which will not be described in detail here.

[0097] like Fig.11 As shown, a connection metal layer is generated in a target area, and the connection metal layer is patterned to obtain a connection portion, and the connection portion is electrically connected to the rewiring layer, including:

[0098] S201, generating a first metal layer on the first organic insulating layer, and patterning the first metal layer to obtain a first connecting portion. The chip connecting portion is electrically connected to a corresponding lead, and the first connecting portion is electrically connected to a corresponding first lead.

[0099] Along the arrangement direction of the organic insulating layer and the rewiring layer, when the height of the chip connecting portion is the same as the height of the first connecting portion, the chip connecting portion can also be obtained by patterning the first metal layer in step S201.

[0100] The implementation process of step S201 may refer to step S120, which will not be described in detail here.

[0101] S202, generating a second metal layer on the back side of the second organic insulating layer, and patterning the second metal layer to obtain a second connecting portion.

[0102] In the arrangement direction of the organic insulating layer and the rewiring layer, when the height of the chip connection portion is different from the height of the first connection portion, a connection metal layer is generated in the target area, and the connection metal layer is patterned to obtain a connection portion, and the connection portion is electrically connected to the rewiring layer, further comprising:

[0103] S203, generating a third metal layer on the first organic insulating layer, and patterning the third metal layer to obtain a chip connecting portion.

[0104] There is no particular order in which steps S201, S202 and S203 are implemented, that is, the implementation order can be S201→S202→S203, or S202→S201→S203, or S203→S202→S201, etc.

[0105] like Fig.12 As shown, mounting components on the connection portion by soldering materials includes:

[0106] S301, the connection terminal of the top-mounted component is electrically connected to the first connection part through the welding material, that is, the first connection part is in contact with the welding material, and welding is completed to fix the connection terminal of the top-mounted component and the first connection part together.

[0107] S302, the welding material on the bare chip welding column contacts the chip connecting portion, and welding is completed to fix the welding column and the chip connecting portion together.

[0108] S303, the connection terminal of the back-mounted component is electrically connected to the second connection part through the welding material, that is, the second connection part is in contact with the welding material, and welding is completed to fix the connection terminal of the back-mounted component and the second connection part together.

[0109] There is no particular order in which steps S301, S302 and S303 are implemented, that is, the implementation order can be S301→S302→S303, or S302→S301→S303, or S303→S302→S301, etc.

[0110] Before back-mounting components, the method further includes removing the loading sheet, which can be specifically implemented by peeling the loading sheet off the back of the second organic insulating film layer.

[0111] In a possible implementation, the packaging method further includes: performing a first injection molding, applying colloid around the chip and the top-mounted components, and using capillary adsorption to adsorb the colloid around the chip or the bottom of the top-mounted components to form an inner injection molding layer 141. Then performing a second injection molding to wrap the top-mounted components and the chip to form an outer injection molding layer 142.

[0112] A fourth connection metal layer is generated on the back side of the second organic insulating layer and patterned to obtain an UBM (Under Ball Meta 1, a metal plating layer below the solder ball, namely the fourth connection portion 1341), and then ball planting is performed.

[0113] The packaging structure obtained by the packaging method provided in the embodiment of the present application can effectively save the reserved area of ​​the rewiring layer, improve the wiring efficiency, reduce the wiring difficulty, and effectively reduce the probability of blister-type voids inside the packaging structure, thereby improving the product yield. In addition, it can also avoid direct contact between the welding material and the rewiring layer, thereby ensuring the safety of the connection line of the rewiring layer and improving the product yield.

Claims

1. A packaging structure, characterized in that: include: a redistribution layer including leads; An organic insulating layer, located on one side of the rewiring layer; A connecting metal layer, comprising a connecting portion, wherein the connecting portion is electrically connected to the lead; The surface of the connecting portion away from the lead is a first surface, the surface of the organic insulating layer away from the rewiring layer is a second surface, the first surface is located on a side of the second surface away from the rewiring layer; the shape of the first surface is circular or polygonal; The component comprises a connection terminal, and the connection terminal is electrically connected to the connection part through a welding material.

2. The packaging structure according to claim 1, characterized in that: The organic insulating layer includes a first organic insulating layer, which includes a plurality of first openings; the redistribution layer includes a first redistribution layer, the lead includes a first lead, the first lead is located in the first redistribution layer, and the first lead is located on one side of the first opening; the connecting metal layer includes a first connecting metal layer, the connecting portion includes a first connecting portion, and the first connecting portion is located in the first connecting metal layer; the first connecting portion is partially located in the first opening and in contact with the first lead.

3. The packaging structure according to claim 1 or 2, characterized in that: The organic insulating layer includes a second organic insulating layer, the second organic insulating layer includes a plurality of second openings; the rewiring layer includes a second rewiring layer, the lead includes a second lead, the second lead is located in the second rewiring layer, the connecting metal layer includes a second connecting metal layer, the connecting portion includes a second connecting portion, the second connecting portion is located in the second connecting metal layer; the second connecting portion is located on one side of the second opening, and the second lead portion is located in the second opening and in contact with the second connecting portion.

4. The packaging structure according to claim 1, characterized in that: Also includes: Bare chips; A solder column, the solder column being electrically connected to the bare chip; Wherein, the connection metal layer further includes a chip connection portion; the solder column is electrically connected to the chip connection portion.

5. The packaging structure according to claim 2, characterized in that: The components include front-mounted components, and the connection terminals of the front-mounted components are electrically connected to the first connection portion through welding material; The packaging structure further includes: an injection molding layer, wherein the injection molding layer wraps the front-mounted component, and the injection molding layer fills a gap between the front-mounted component and the first organic insulating layer.

6. The packaging structure according to claim 1, characterized in that: The number of sides of the polygon is greater than or equal to six.

7. The packaging structure according to claim 2, characterized in that: The first connecting portion includes a body portion and a boss portion. The body portion is located in the first opening, and the boss portion is located at a side of the body portion away from the first lead and protrudes from the second surface.

8. The packaging structure according to claim 1, characterized in that: A vertical distance D between the first surface and the second surface satisfies: 8um≤D≤23um.

9. The packaging structure according to claim 7, characterized in that: The body portion is filled in the first opening, and a side surface of the body portion is in contact with a side surface of the first opening.

10. The packaging structure according to claim 3, characterized in that: The rewiring layer comprises a third rewiring layer, and the third rewiring layer is located between the first rewiring layer and the second rewiring layer; the third rewiring layer is used to realize electrical connection between the first rewiring layer and the second rewiring layer.

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