Perovskite diode with electro-optical and optical-electro conversion functions and preparation method thereof

Abstract

The invention discloses a perovskite diode with electricity-light and light-electricity conversion functions and a preparation method of the perovskite diode. The perovskite diode sequentially comprises a transparent substrate, a cathode, an electron transport layer, an interface layer, a perovskite active layer, a hole transport layer and an anode, the electron transport layer is zinc oxide or magnesium-doped zinc oxide; the interface layer is serine or phenethyl ammonium bromide, and the serine or the phenethyl ammonium bromide is used for inhibiting the fluorescence quenching effect of zinc oxide or magnesium-doped zinc oxide on perovskite; the perovskite active layer is prepared from a precursor solution containing AX, BX2 and serine, A is a monovalent cation, B is a divalent metal cation, and X is a monovalent anion. According to the invention, effective light-electricity and electricity-light conversion functions are simultaneously realized in a single perovskite diode, and balanced photovoltaic and luminescent properties are obtained.

Description

Technical Field

[0001] The invention relates to a perovskite diode, and in particular to a perovskite diode with electric-optical and optical-electrical conversion functions and a preparation method thereof. Background Art

[0002] The production and consumption of energy has become an important issue in the development of science and technology and society, and has received great attention from the industry. Photovoltaic cells and light-emitting diodes, which are based on photoelectric conversion, are two important semiconductor devices in the field of solar energy utilization and energy consumption. Their technological development has a huge impact on the clean energy industry, display and lighting industry, etc. Although photovoltaic cells and light-emitting diodes have similar device structures, their carrier dynamics processes are completely opposite. Photovoltaic cells convert light energy into electrical energy, while light-emitting diodes convert electrical energy into light energy. Due to the limitations of traditional semiconductor materials, this light-to-electric conversion technology and electro-optical conversion technology have always been developed independently and in parallel, making it difficult to integrate photovoltaic and light-emitting functions on a single device.

[0003] As a direct bandgap semiconductor material with excellent performance, metal halide perovskites have been successfully used to prepare high-performance photovoltaic cells and light-emitting diodes. They are expected to break through the technical bottleneck that semiconductor devices can only achieve one-way conversion of light-to-electricity or electricity-to-light, and provide a basis for building high-performance, low-cost semiconductor devices that integrate photovoltaic and light-emitting functions. In perovskite diodes with integrated photovoltaic and light-emitting functions, in order to ensure the effective reciprocity of the two physical processes of light-to-electricity conversion and electricity-to-light conversion, the perovskite active layer needs to have efficient carrier recombination and dissociation capabilities at the same time, and the adjacent transport layer needs to have balanced carrier injection and extraction capabilities. However, if the perovskite diode device adopts the structure of a photovoltaic cell, uses fullerene (such as C60, PCBM and C70, etc.) and metal oxides (such as tin oxide and zinc oxide, etc.) as electron transport layers and is in direct contact with the perovskite active layer, it will severely quench the perovskite luminescence, resulting in the photovoltaic performance of the device being better than the luminescence performance, and it is difficult to achieve a balance between the photoelectric conversion efficiency (PCE) and the external quantum efficiency (EQE) of luminescence, thereby affecting the life of the device. Summary of the invention

[0004] In order to overcome the above-mentioned shortcomings and deficiencies of the prior art, the object of the present invention is to provide a perovskite diode with electro-optical and photo-electric conversion functions, by introducing a serine or phenethylammonium bromide interface layer to suppress the fluorescence quenching effect of ZnO or ZnMgO on perovskite, thereby simultaneously realizing effective photo-electrical and electro-optical conversion functions in a single perovskite diode, obtaining balanced photovoltaic and luminescence performance, so that both PCE and EQE exceed 15%.

[0005] Another object of the present invention is to provide a method for preparing the above-mentioned perovskite diode with electric-to-optical and optical-to-electrical conversion functions.

[0006] The purpose of the present invention is achieved through the following technical solutions:

[0007] The present invention provides a perovskite diode with electric-optical and optical-electrical conversion functions, which comprises a transparent substrate, a cathode, an electron transport layer, an interface layer, a perovskite active layer, a hole transport layer, and an anode in sequence;

[0008] The electron transport layer is zinc oxide (ZnO) or magnesium-doped zinc oxide (ZnMgO);

[0009] The interface layer is serine or phenethylammonium bromide, and the serine or phenethylammonium bromide is used to suppress the fluorescence quenching effect of zinc oxide or magnesium-doped zinc oxide on perovskite;

[0010] The perovskite active layer comprises AX, BX 2 A precursor solution of 1,2-dihydro-1,4 ...

[0011] Preferably, the A is MA + (methylamine cation), FA + (formamidinium cation) and Cs + (cesium cation); B is Pb 2+ and Sn 2+ At least one of; wherein X is 1 - Br - , Cl - 、SCN - (Thiocyanate ion), TFA - (trifluoroacetate ion) and CH 3 COO - (acetate ion).

[0012] Preferably, the hole transport layer is at least one of doped 2,2',7,7'-tetrakis[n,n-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (Spiro-OMeTAD) (doping materials are tributyl phosphate (t-BP) and lithium bis(trifluoromethanesulfonyl)imide (Li-TFSI)), poly(9,9-n-dioctyl-2,7-fluorene-alt-9-isooctyl-3,6-carbazole) (PF8Cz), and poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-alt-(9,9-di-n-octylfluorenyl-2,7-diyl)] (TFB).

[0013] Preferably, the anode is composed of two layers, the first layer is molybdenum oxide or 1,4,5,8,9,11-hexaazatriphenylhexanitrile, with a thickness of 1-20 nanometers; the second layer is a metal layer with a thickness of 50-200 nanometers, and the metal is aluminum, silver or gold.

[0014] Preferably, the transparent substrate is glass or plastic.

[0015] Preferably, the cathode is one of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), indium zinc oxide (IZO) and aluminum-doped zinc oxide (AZO).

[0016] The present invention also provides a method for preparing the perovskite diode having the electric-optical and optical-electrical conversion functions, comprising the following steps:

[0017] (1) Take AX and BX 2 Mix and dissolve with serine, heat the solution to 40-100°C and stir, then cool to room temperature, let stand, take the supernatant and filter, the filtrate is the precursor solution;

[0018] (2) directly spin coating an ethanol solution containing zinc oxide or magnesium-doped zinc oxide on a cathode on a transparent substrate under air conditions, and annealing at 100 to 150° C. to obtain an electron transport layer;

[0019] (3) directly spin-coating an aqueous solution of serine or phenethylammonium bromide on the electron transport layer under air conditions, and annealing at 100-150° C. to obtain an interface layer;

[0020] (4) depositing the precursor solution on the interface layer by spin coating, and adding an anti-solvent during the spin coating process to accelerate the crystallization rate of the perovskite, and forming a perovskite active layer after annealing at 100 to 150° C.;

[0021] (5) Deposit the hole transport layer and the anode in sequence.

[0022] Preferably, in the precursor solution, BX 2 The concentration of serine, AX and BX 2 The molar ratio is 0.01~1:0.1~10:1.

[0023] Preferably, in the ethanol solution containing zinc oxide or magnesium-doped zinc oxide, the concentration of zinc oxide or magnesium-doped zinc oxide is 5-50 mg / mL.

[0024] Preferably, the hole transport layer is prepared as follows:

[0025] The hole transport material is dissolved in chlorobenzene, the solution is stirred overnight, allowed to stand, the upper clear liquid is filtered, and the filtrate is the hole transport layer solution; the hole transport layer solution is deposited on the perovskite active layer by spin coating to form a hole transport layer.

[0026] Preferably, the concentration of the hole transport layer material solution is 5-100 mg / mL.

[0027] Preferably, the anode is prepared by: depositing a layer of molybdenum oxide or HAT-CN on the hole transport layer by vacuum evaporation, and then depositing a layer of metal layer to prepare a composite anode.

[0028] Preferably, the solvent of the precursor solution is one or more of N,N-dimethylformamide (DMF), dimethyl sulfoxide (DMSO), γ-butyrolactone (GBL) and N-methylpyrrolidone (NMP).

[0029] Preferably, the anti-solvent is one or more of ethyl acetate, methyl acetate, chlorobenzene, toluene and octane.

[0030] Preferably, in step (2), the cathode on the transparent substrate is pretreated with ultraviolet ozone for 5 to 60 minutes.

[0031] Preferably, the spin coating speed in step (2) is 2000-6000 revolutions per minute (rpm), the spin coating acceleration is 2000-6000 revolutions per minute / second (rpm / s), and the total spin coating time is 20-60 seconds; the annealing time is 1-90 minutes.

[0032] Preferably, the spin coating speed in step (3) is 2000-6000 revolutions per minute (rpm), the spin coating acceleration is 2000-6000 revolutions per minute / second (rpm / s), and the total spin coating time is 20-60 seconds; the annealing temperature is 100-150° C., and the time is 1-90 minutes.

[0033] Preferably, the spin coating speed in step (4) is 2000-6000 revolutions per minute (rpm), the spin coating acceleration is 2000-6000 revolutions per minute / second (rpm / s), and the total spin coating time is 20-60 seconds; the annealing temperature is 100-150° C., the time is 1-90 minutes, and the anti-solvent addition time is 5-20 seconds.

[0034] Preferably, during the preparation of the hole transport layer, the spin coating speed is 2000-6000 revolutions per minute (rpm), the spin coating acceleration is 2000-6000 revolutions per minute / second (rpm / s), and the total spin coating time is 20-60 seconds.

[0035] Compared with the prior art, the present invention has the following advantages and beneficial effects:

[0036] (1) The perovskite diode with electro-optical and photo-electrical conversion functions of the present invention suppresses the fluorescence quenching effect of ZnO or ZnMgO on perovskite by introducing a serine or phenethylammonium bromide interface layer, thereby realizing effective photo-electrical and electro-optical conversion functions in a single perovskite diode, and obtaining balanced photovoltaic and luminescent properties, so that both PCE and EQE exceed 15%. The balanced photovoltaic and luminescent properties are beneficial to prolonging the life of the perovskite diode with electro-optical and photo-electrical conversion functions.

[0037] (2) The perovskite diode with electric-to-optical and optical-to-electrical conversion functions of the present invention modifies the perovskite active layer by additives, effectively adjusting the exciton binding energy, so that the perovskite active layer has efficient and balanced carrier recombination and dissociation capabilities, reduces the potential barrier between the perovskite active layer and the transport layer, and enables the carrier injection and extraction balance at the interface. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 This is a schematic structural diagram of a perovskite diode with electric-to-optical and optical-to-electrical conversion functions prepared in Example 1 of the present invention.

[0039] Figure 2 This is an external quantum efficiency-current density curve when the serine prepared in Example 1 of the present invention is used as an interface layer and the perovskite diode without an interface layer is used as a light-emitting device.

[0040] Figure 3 The perovskite diode prepared in Example 1 of the present invention with serine as the interface layer and without the interface layer as a photovoltaic device was used under simulated AM 1.5G 1 sun illumination (100mW cm -2 ) conditions.

[0041] Figure 4 Photoluminescence fluorescence spectra of perovskite films with serine as an interface layer and without an interface layer prepared in Example 1 of the present invention.

[0042] Figure 5 The external quantum efficiency-current density curves of the perovskite diode used as a light-emitting device when the concentration of the serine aqueous solution prepared in Example 2 of the present invention is 1 mg / ml and 2 mg / ml.

[0043] Figure 6 The concentrations of the serine aqueous solution prepared in Example 2 of the present invention are 1 mg / ml and 2 mg / ml. The corresponding perovskite diodes are used as photovoltaic devices under simulated AM 1.5G 1 sun illumination (100 mW cm -2) conditions.

[0044] Figure 7 The external quantum efficiency-current density curve of the perovskite diode with phenethylammonium bromide as the interface layer material and no interface prepared in Example 3 of the present invention as a light-emitting device.

[0045] Figure 8 The interface layer material prepared in Example 3 of the present invention is phenethylammonium bromide and the perovskite diode without interface is used as a photovoltaic device under simulated AM 1.5G 1 sun illumination (100mW cm -2 ) conditions.

[0046] Fig. 9 The external quantum efficiency-current density curves of the perovskite diodes with or without serine added to the precursor solution as light-emitting devices are shown in FIG. Fig. 9 shown.

[0047] Fig.10 The perovskite diodes with or without serine added to the precursor solution were used as photovoltaic devices under simulated AM 1.5G 1 sun illumination (100 mW cm -2 ) conditions. DETAILED DESCRIPTION

[0048] The present invention will be further described in detail below in conjunction with examples, but the embodiments of the present invention are not limited thereto.

[0049] Example 1

[0050] This embodiment provides a method for preparing a perovskite diode having an electro-optical and optical-electrical conversion function, comprising the following steps:

[0051] (1) Preparation of perovskite precursor solution: Serine, FAI (methylamino hydroiodide), PbI 2 (lead iodide) was dissolved in DMF solvent in a molar ratio of 0.1:1.8:1, where PbI 2 The molar concentration is 0.7 mol / L, the solution is stirred on a 50°C hot plate for 12 hours, then the solution is cooled to room temperature, allowed to stand, and the supernatant is filtered.

[0052] (2) The clean ITO glass was treated in a UV ozone cleaning machine for 15 minutes, and then a ZnO ethanol solution with a concentration of 25 mg / ml was spin-coated on the treated ITO glass at a spin-coating speed of 4000 rpm for 30 seconds. The ZnO layer was annealed at 120°C for 20 minutes to obtain an electron transport layer.

[0053] (3) A serine aqueous solution with a concentration of 1 mg / ml was spin-coated on the ZnO electron transport layer at a spin coating speed of 4000 rpm for 30 seconds, and annealed at 120° C. for 10 minutes to obtain an interface layer.

[0054] (4) The perovskite precursor solution prepared in step (1) was spin-coated on the prepared interface layer at a rotation speed of 6000 rpm. The total spin-coating time was 20 seconds. At the 5th second, 20 μL of chlorobenzene was quickly added to the perovskite film as an anti-solvent. After the spin-coating was completed, the film was annealed at 150° C. for 1 minute to obtain the perovskite active layer.

[0055] (5) Prepare a 25 mg / ml Spiro-OMeTAD (doped with 2.6 mg / ml t-BP and 520 mg / ml Li-TFSI) chlorobenzene solution, and spin-coat it on the perovskite active layer prepared in step (3) at 4000 rpm for 30 seconds to obtain a hole transport layer.

[0056] (5) 5 nanometers of molybdenum oxide and 100 nanometers of Ag electrode are respectively deposited on the hole transport layer prepared in step (4) by vacuum evaporation to obtain a perovskite diode with electro-optical and optical-electrical conversion functions.

[0057] The perovskite diode with electric-optical and optical-electrical conversion functions prepared in this embodiment is as follows Figure 1 As shown, it includes a transparent substrate 1, a cathode 2, an electron transport layer 3, an interface layer 4, a perovskite active layer 5, a hole transport layer 6, and a composite anode 7 in sequence.

[0058] In order to illustrate the role of the interface layer of the present invention, a comparative sample without an interface layer is prepared in this embodiment: step (3) is not performed in the above steps.

[0059] Figure 2 This is an external quantum efficiency-current density curve when the serine prepared in this example is used as an interface layer and the perovskite diode without an interface layer is used as a light-emitting device.

[0060] Figure 3 The perovskite diodes prepared in this example with serine as the interface layer and without the interface layer were used as photovoltaic devices under simulated AM 1.5G 1 sun illumination (100 mW cm -2 ) conditions.

[0061] Figure 4 The photoluminescence fluorescence spectra of the perovskite films prepared in this example with serine as the interface layer and without the interface layer.

[0062] Table 1 shows the device performance parameters of the perovskite diodes prepared in this example with serine as the interface layer and without the interface layer.

[0063] Table 1. Performance parameters of the prepared devices

[0064]

[0065] From the above results, it can be seen that by adding a serine interface layer between the perovskite active layer and the electron transport layer, the fluorescence spectrum intensity of the perovskite film is significantly enhanced (e.g. Figure 4 As shown in the figure, the fluorescence quenching effect of the metal oxide electron transport layer ZnO on the perovskite is suppressed, the potential barrier between the perovskite active layer and the transport layer is reduced, and the carrier injection and extraction balance can be achieved at the interface. The maximum electroluminescence external quantum efficiency reaches 18.4%, and the photoelectric conversion efficiency of the perovskite diode reaches 15.4%.

[0066] Example 2

[0067] The structure and preparation method of this embodiment are basically the same as those of Example 1, except that the concentration of the serine aqueous solution for preparing the serine interface layer is 2 mg / ml, and the performance parameters of the perovskite diode corresponding to the concentrations of the serine aqueous solution of 1 mg / ml and 2 mg / ml are shown in Table 2.

[0068] Table 2. Performance parameters of the prepared devices

[0069]

[0070] The external quantum efficiency-current density curves of the perovskite diodes used as light-emitting devices when the concentration of serine aqueous solution is 1 mg / ml and 2 mg / ml are as follows Figure 5 shown.

[0071] The concentration of serine aqueous solution was 1mg / ml and 2mg / ml, and the corresponding perovskite diodes were used as photovoltaic devices under simulated AM 1.5G 1 sun illumination (100mW cm -2 ) under the condition of current density-voltage characteristic curve as shown in Figure 6 shown.

[0072] From the above results, it can be seen that when the concentration of serine in the interface layer is 2 mg / ml, the maximum electroluminescence external quantum efficiency of the perovskite diode reaches 16.8%, and the photoelectric conversion efficiency reaches 16.3%, showing a more balanced luminescence and photovoltaic performance.

[0073] Example 3

[0074] The device structure and preparation method of this embodiment are basically the same as those of embodiment 1, except that the interface layer material is phenethylammonium bromide, and the concentration of the phenethylammonium bromide aqueous solution is 1 mg / ml. The device performance parameters of the perovskite diode with phenethylammonium bromide as the interface layer material and no interface are shown in Table 3.

[0075] Table 3. Performance parameters of the prepared devices

[0076]

[0077] The external quantum efficiency-current density curve of the perovskite diode with phenethylammonium bromide as the interface material and no interface as a light-emitting device is shown in the figure. Figure 7 shown.

[0078] The perovskite diode with phenylethylammonium bromide as the interface material and no interface as a photovoltaic device simulated AM1.5G 1 sun illumination (100mW cm -2 ) under the condition of current density-voltage characteristic curve as shown in Figure 8 shown.

[0079] From the above results, it can be seen that by adding phenethylammonium bromide as an interface layer between the electron transport layer and the perovskite active layer, the luminescence and photovoltaic performance of the perovskite diode are improved, the maximum electroluminescence external quantum efficiency reaches 14.1%, and the photoelectric conversion efficiency reaches 14.3%, which has a similar effect as serine as an interface layer, and also shows balanced luminescence and photovoltaic performance.

[0080] Comparative Example

[0081] To illustrate the role of serine in the precursor solution of the present invention, the following two perovskite diodes without an interface layer were prepared in this comparative example according to the following steps:

[0082] (1) Preparation of perovskite precursor solution: Serine, FAI (methylamino hydroiodide), PbI 2 (lead iodide) was dissolved in DMF solvent in a molar ratio of 0.1:1.8:1, where PbI 2 The molar concentration is 0.7 mol / L, the solution is stirred on a 50°C hot plate for 12 hours, then the solution is cooled to room temperature, allowed to stand, and the supernatant is filtered.

[0083] (2) The clean ITO glass was treated in a UV ozone cleaning machine for 15 minutes, and then a ZnO ethanol solution with a concentration of 25 mg / ml was spin-coated on the treated ITO glass at a spin-coating speed of 4000 rpm for 30 seconds. The ZnO layer was annealed at 120°C for 20 minutes.

[0084] (3) The perovskite precursor solution prepared in step (1) was spin-coated on the prepared ZnO layer at a rotation speed of 6000 rpm. The total spin-coating time was 20 seconds. At the 5th second, 20 μL of chlorobenzene was quickly added to the perovskite film as an anti-solvent. After the spin-coating was completed, the perovskite active layer was annealed at 150° C. for 1 minute.

[0085] (4) Prepare a 25 mg / ml Spiro-OMeTAD (doped with 2.6 mg / ml t-BP and 520 mg / ml Li-TFSI) chlorobenzene solution, and spin-coat it on the perovskite active layer prepared in step (3) at 4000 rpm for 30 seconds to obtain a hole transport layer.

[0086] (5) 5 nanometers of molybdenum oxide and 100 nanometers of Ag electrode are respectively deposited on the hole transport layer prepared in step (4) by vacuum evaporation to obtain a perovskite diode with electro-optical and optical-electrical conversion functions.

[0087] Taking the perovskite diode without adding serine as a control, the performance comparison of the two perovskite devices is shown in Table 4.

[0088] Taking the perovskite diode without adding serine into the precursor solution as the control, the external quantum efficiency-current density curves of the two perovskite devices as light-emitting devices are shown in Fig. 9 shown.

[0089] The perovskite diode without serine added to the precursor solution was used as a control. When the two perovskite devices were used as light-emitting devices, they exhibited a high emission power under simulated AM 1.5G 1-sun illumination (100 mW cm -2 ) under the condition of current density-voltage characteristic curve as shown in Fig.10 shown.

[0090] From the above results, it can be seen that by using serine additives to adjust the exciton binding energy, the perovskite active layer has efficient and balanced carrier recombination and dissociation capabilities. After adding serine, the perovskite diode showed excellent performance, with the maximum electroluminescence external quantum efficiency increased from 5.7% to 11.6%, and the photoelectric conversion efficiency increased from 5.1% to 8.5%.

[0091] The above embodiments are preferred implementation modes of the present invention, but the implementation modes of the present invention are not limited to the embodiments. Any other changes, modifications, substitutions, combinations, and simplifications that do not deviate from the spirit and principles of the present invention should be equivalent replacement methods and are included in the protection scope of the present invention.

Claims

1. A perovskite diode having electrical-optical and optical-electrical conversion functions, characterized in that: It includes a transparent substrate, a cathode, an electron transport layer, an interface layer, a perovskite active layer, a hole transport layer, and an anode in sequence; The electron transport layer is zinc oxide or magnesium-doped zinc oxide; The interface layer is serine or phenethylammonium bromide, and the serine or phenethylammonium bromide is used to suppress the fluorescence quenching effect of zinc oxide or magnesium-doped zinc oxide on perovskite; The perovskite active layer is prepared from a precursor solution containing AX, BX2 and serine, wherein A is a monovalent cation, B is a divalent metal cation, and X is a monovalent anion.

2. The perovskite diode with electric-optical and optical-electrical conversion functions according to claim 1, characterized in that: A is MA + , FA + and Cs + At least one of; B is Pb 2+ and Sn 2+ At least one of; wherein X is 1 - Br - , Cl - 、SCN - 、TFA - and CH3COO - At least one of .

3. The perovskite diode with electric-optical and optical-electrical conversion functions according to claim 1, characterized in that: The hole transport layer is at least one of doped 2,2',7,7'-tetrakis[n,n-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene, poly(9,9-n-dioctyl-2,7-fluorene-alt-9-isooctyl-3,6-carbazole), and poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-alt-(9,9-di-n-octylfluorenyl-2,7-diyl)]; in the doped 2,2',7,7'-tetrakis[n,n-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene, the doping material is tributyl phosphate or lithium bis(trifluoromethanesulfonyl)imide.

4. The perovskite diode with electric-optical and optical-electrical conversion functions according to claim 1, characterized in that: The anode is composed of two layers, the first layer is molybdenum oxide or 1,4,5,8,9,11-hexaazatriphenylhexanitrile, with a thickness of 1-20 nanometers; The second layer is a metal layer with a thickness of 50-200 nanometers. The metal is aluminum, silver or gold.

5. The method for preparing a perovskite diode having an electro-optical and optical-electrical conversion function according to any one of claims 1 to 4, characterized in that: The following steps are involved: (1) Mix AX, BX2 and serine and dissolve them, heat the solution to 40-100°C and stir, then cool it to room temperature, let it stand, take the supernatant and filter it, the filtrate is the precursor solution; (2) directly spin coating an ethanol solution containing zinc oxide or magnesium-doped zinc oxide on a cathode on a transparent substrate under air conditions, and annealing at 100 to 150° C. to obtain an electron transport layer; (3) directly spin-coating an aqueous solution of serine or phenethylammonium bromide on the electron transport layer under air conditions, and annealing at 100-150° C. to obtain an interface layer; (4) depositing the precursor solution on the interface layer by spin coating, and adding an anti-solvent during the spin coating process to accelerate the crystallization rate of the perovskite, and forming a perovskite active layer after annealing at 100 to 150° C.; (5) Deposit the hole transport layer and the anode in sequence.

6. The preparation method according to claim 5, characterized in that: In the precursor solution, the concentration of BX2 is 0.1-1.5 mol / L; the molar ratio of serine, AX and BX2 is 0.01-1:0.1-10:

1.

7. The preparation method according to claim 5, characterized in that: In the ethanol solution containing zinc oxide or magnesium-doped zinc oxide, the concentration of zinc oxide or magnesium-doped zinc oxide is 5-50 mg / mL.

8. The preparation method according to claim 5, characterized in that: The hole transport layer is prepared as follows: The hole transport material is dissolved in chlorobenzene, the solution is stirred overnight, allowed to stand, the upper clear liquid is filtered, and the filtrate is the hole transport layer solution; the hole transport layer solution is deposited on the perovskite active layer by spin coating to form a hole transport layer.

9. The preparation method according to claim 5, characterized in that: The concentration of the hole transport layer material solution is 5-100 mg / mL.

10. The preparation method according to claim 5, characterized in that: The anode is prepared by: depositing a layer of molybdenum oxide or HAT-CN on the hole transport layer by vacuum evaporation method, and then depositing a layer of metal layer to prepare a composite anode.

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