Display panel, preparation method and display device

Abstract

The invention provides a display panel. The display panel comprises a glass substrate, a buffer layer, a shading layer, a polycrystalline silicon layer, an insulating layer, a gate layer, an interlayer insulating layer and an interlayer insulating layer. The glass substrate is provided with a first surface and a second surface which are oppositely arranged; the buffer layer is arranged on the first surface; the shading layer is arranged on one side, far away from the glass substrate, of the buffer layer; the polycrystalline silicon layer is arranged on one side, far away from the buffer layer, of the shading layer; the insulating layer is arranged on one side, far away from the shading layer, of the polycrystalline silicon layer; the gate layer is arranged on one side, far away from the polycrystalline silicon layer, of the insulating layer; the interlayer insulating layer is arranged on one side, far away from the insulating layer, of the gate layer; the source and drain electrode layer passes through the interlayer insulating layer and the insulating layer and is connected with the polycrystalline silicon layer; wherein the light shielding layer comprises a metal oxide material with a light shielding property. The metal oxide material is used as the shading layer, so that the technological process is simplified, and the production cost is reduced.

Description

Technical Field

[0001] The present application relates to the technical field of display panels, and in particular to a display panel, a preparation method and a display device. Background Art

[0002] LTPS is the abbreviation of Low-Temperature Polycrystalline Silicon, which is a high-performance thin-film transistor technology widely used in display technologies such as liquid crystal displays (LCD) and organic light-emitting diodes (OLED). LTPS technology has the advantages of fast response, low power consumption, high resolution, bright colors and reduced eye fatigue.

[0003] LTPS is currently widely used in the automotive field. Current automotive products have high backlight brightness requirements. Thin-film transistors are very likely to have off-state leakage current under the influence of strong light, which seriously affects the image quality and reliability of the product. Therefore, a light-shielding layer must be added to the LTPS thin-film transistor device, especially metal molybdenum. However, this solution has complex processes and high costs.

[0004] Therefore, providing a display panel, a manufacturing method and a display device that reduce production costs has become a technical problem that needs to be solved urgently by those skilled in the art. Summary of the invention

[0005] Embodiments of the present application provide a display panel, a manufacturing method, and a display device.

[0006] The embodiment of the present application provides a display panel, including a glass substrate, a buffer layer, a light shielding layer, a polysilicon layer, an insulating layer, a gate layer, an interlayer insulating layer and an interlayer insulating layer. The glass substrate has a first surface and a second surface arranged opposite to each other; the buffer layer is arranged on the first surface; the light shielding layer is arranged on the side of the buffer layer away from the glass substrate; the polysilicon layer is arranged on the side of the light shielding layer away from the buffer layer; the insulating layer is arranged on the side of the polysilicon layer away from the light shielding layer; the gate layer is arranged on the side of the insulating layer away from the polysilicon layer; the interlayer insulating layer is arranged on the side of the gate layer away from the insulating layer; the source and drain layer passes through the interlayer insulating layer and is connected to the insulating layer and the polysilicon layer; wherein the light shielding layer includes a metal oxide material with light shielding properties.

[0007] In some embodiments, the light shielding layer is made of a material selected from titanium oxide, zinc oxide, and hafnium oxide.

[0008] In some embodiments, the light shielding layer includes a metal oxide and an oxide, the metal oxide and the oxide are stacked, and a refractive index of the metal oxide is greater than a refractive index of the oxide.

[0009] In some embodiments, the metal oxide and the oxide are alternately stacked, the metal oxide is titanium oxide or zirconium oxide, and the oxide is silicon oxide.

[0010] In some embodiments, the thickness of the metal oxide is 80 to 100 nanometers, and the thickness of the oxide is 30 to 50 nanometers.

[0011] In some embodiments, the light shielding layer is doped with nanoparticles, and the nanoparticles are gold or silver nanoparticles.

[0012] In some embodiments, a microlens array layer is disposed between the light shielding layer and the polysilicon layer.

[0013] In some embodiments, a transition layer is disposed between the light-shielding layer and the buffer layer, and the transition layer is used to enhance the adhesion between the light-shielding layer and the buffer layer.

[0014] The present application also provides a method for preparing a display panel, including:

[0015] Providing a glass substrate, wherein the glass substrate has a first surface and a second surface disposed opposite to each other;

[0016] Disposing a buffer layer on the first side;

[0017] A light shielding layer is provided on a side of the buffer layer away from the glass substrate, wherein the light shielding layer comprises a metal oxide material having light shielding property;

[0018] A polysilicon layer is disposed on a side of the light shielding layer away from the buffer layer, and the light shielding layer and the polysilicon layer are exposed and patterned together;

[0019] An insulating layer is provided on a side of the polysilicon layer away from the light shielding layer;

[0020] Disposing a gate layer on a side of the insulating layer away from the polysilicon layer;

[0021] Disposing an interlayer insulating layer on a side of the gate layer away from the insulating layer;

[0022] A source-drain layer is connected to the polysilicon layer through the interlayer insulating layer and the insulating layer.

[0023] Another embodiment of the present application further provides a display device, comprising the display panel described in the above embodiment.

[0024] The application embodiment provides a display panel, including a glass substrate, a buffer layer, a light shielding layer, a polysilicon layer, an insulating layer, a gate layer, an interlayer insulating layer and an interlayer insulating layer. The glass substrate has a first surface and a second surface arranged opposite to each other; the buffer layer is arranged on the first surface; the light shielding layer is arranged on the side of the buffer layer away from the glass substrate; the polysilicon layer is arranged on the side of the light shielding layer away from the buffer layer; the insulating layer is arranged on the side of the polysilicon layer away from the light shielding layer; the gate layer is arranged on the side of the insulating layer away from the polysilicon layer; the interlayer insulating layer is arranged on the side of the gate layer away from the insulating layer; the source and drain layer passes through the interlayer insulating layer and the insulating layer and the polysilicon layer to connect; wherein the light shielding layer includes a metal oxide material with light shielding properties. By using a metal oxide material as a light shielding layer, the process flow is simplified, the production cost is reduced, and the stability and optical performance of the device are improved at the same time, which has the advantages of simplifying the process flow, reducing the production cost, and improving the stability and optical performance of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application, and those skilled in the art can obtain other drawings based on these drawings without creative work.

[0026] Figure 1 A schematic diagram of the structure of a display panel provided in an embodiment of the present application.

[0027] Figure 2 Another structural schematic diagram of a display panel provided in an embodiment of the present application.

[0028] Figure 3 This is another schematic diagram of the structure of the display panel provided in the embodiment of the present application.

[0029] Figure 4 This is another schematic diagram of the structure of the display panel provided in the embodiment of the present application.

[0030] Figure 5 A schematic flow chart of a method for preparing a display panel provided in an embodiment of the present application.

[0031] Figure 6 A schematic diagram of the structure of a display device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0032] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0033] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined.

[0034] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or mutual communication; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0035] In the present application, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0036] The disclosure below provides many different embodiments or examples to realize the different structures of the present application. In order to simplify the disclosure of the present application, the parts and settings of specific examples are described below. Of course, they are only examples, and the purpose is not to limit the present application. In addition, the present application can repeat reference numbers and / or reference letters in different examples, and this repetition is for the purpose of simplification and clarity, which itself does not indicate the relationship between the various embodiments and / or settings discussed. In addition, the various specific processes and material examples provided by the present application, but those of ordinary skill in the art can appreciate the application of other processes and / or the use of other materials.

[0037] Embodiments of the present application provide a display panel, a manufacturing method, and a display device.

[0038] See also Figures 1 to 4 The embodiment of the present application provides a display panel 100, including a glass substrate 10, a buffer layer 20, a light shielding layer 30, a polysilicon layer 40, an insulating layer 50, a gate layer 60, an interlayer insulating layer 70 and an interlayer insulating layer 70. The glass substrate 10 has a first surface 10a and a second surface 10b that are arranged opposite to each other; the buffer layer 20 is arranged on the first surface 10a; the light shielding layer 30 is arranged on the side of the buffer layer 20 away from the glass substrate 10; the polysilicon layer 40 is arranged on the side of the light shielding layer 30 away from the buffer layer 20; the insulating layer 50 is arranged on the side of the polysilicon layer 40 away from the light shielding layer 30; the gate layer 60 is arranged on the side of the insulating layer 50 away from the polysilicon layer 40; the interlayer insulating layer 70 is arranged on the side of the gate layer 60 away from the insulating layer 50; the source-drain electrode layer 80 passes through the interlayer insulating layer 70 and is connected to the insulating layer 50 and the polysilicon layer 40; wherein the light shielding layer 30 includes a metal oxide 31 material with light shielding properties.

[0039] The first surface 10 a is the upper surface of the glass substrate 10 , and the second surface 10 b is the lower surface of the glass substrate 10 . Of course, the directions of the first surface 10 a and the second surface 10 b can be exchanged as needed.

[0040] Specifically, the glass substrate 10 is a basic supporting structure of the display panel 100, and has a first surface 10a and a second surface 10b disposed opposite to each other. It is generally used to provide mechanical support and optical transparency.

[0041] The buffer layer 20 is disposed on the first side of the glass substrate 10 , and its function is to improve the flatness of the surface of the glass substrate 10 , reduce the impact of defects on the glass surface on subsequent thin film layers, and provide a certain stress buffer.

[0042] The light shielding layer 30 is disposed on the side of the buffer layer 20 away from the glass substrate 10, and its main function is to block light and prevent the light from interfering with the polysilicon layer 40, thereby improving the performance and contrast of the display panel 100. The light shielding layer 30 is made of metal oxide 31, which has good light shielding properties and certain electrical conductivity.

[0043] The polysilicon layer 40 is disposed on the side of the light shielding layer 30 away from the buffer layer 20 and is the core part of the display panel 100. It is used to control the flow of current and realize the switching function of the pixel. It is usually made of polysilicon or oxide semiconductor material.

[0044] The insulating layer 50 is disposed on a side of the polysilicon layer 40 away from the light shielding layer 30 to isolate the polysilicon layer 40 and the gate layer 60 to prevent short circuits between electrodes and to control electric field distribution to improve device performance.

[0045] The gate layer 60 is disposed on a side of the insulating layer 50 away from the polysilicon layer 40 and is used to apply a control voltage to control the conductivity of the polysilicon layer 40 through an electric field to achieve a switching operation of the pixel.

[0046] The interlayer insulating layer 70 is disposed on a side of the gate layer 60 away from the insulating layer 50 to isolate the gate layer 60 from the source-drain layer 80 , prevent short circuits between electrodes, and protect the gate layer 60 from subsequent processes.

[0047] The source-drain electrode layer 80 passes through the interlayer insulating layer 70 and the insulating layer 50 and is connected to the polysilicon layer 40 to form a current channel to realize current injection and output. The source-drain electrode layer 80 is usually made of a metal material and has good conductivity.

[0048] This technical solution effectively reduces the influence of strong light on the thin film transistor by providing a light-shielding layer 30 made of a metal oxide 31 material with light-shielding properties, reduces the off-state leakage current phenomenon, and thus improves the image quality and reliability of the display panel 100. Compared with the prior art, this solution not only simplifies the production process, but also reduces the production cost, and solves the technical problem that vehicle-mounted display products are prone to leakage current under high-brightness backlight conditions.

[0049] Furthermore, the present application also proposes that the material used for the light-shielding layer 30 is one of titanium oxide, zinc oxide, and hafnium oxide. Specifically, the light-shielding layer 30 can be prepared using any one of titanium oxide, zinc oxide, or hafnium oxide. These materials have excellent light-shielding properties and can effectively block light from passing through, thereby reducing the off-state leakage current phenomenon of thin-film transistors in strong light environments. For example, titanium oxide has a high refractive index and good chemical stability, and is suitable for high-brightness vehicle-mounted display environments; zinc oxide has a high light transmittance and a low resistivity, and is suitable for display panels 100 that require high resolution; hafnium oxide is suitable for display applications in high-temperature environments due to its high refractive index and good thermal stability.

[0050] As a preferred embodiment, the light shielding layer 30 can be prepared by physical vapor deposition (PVD) or chemical vapor deposition (CVD) and other processes. Specifically, titanium oxide can be deposited on the buffer layer 20 by a sputtering process, zinc oxide can be prepared by an atomic layer deposition (ALD) process, and hafnium oxide can be formed by a thermal evaporation process. These processes can be selected according to specific application requirements and material properties to ensure the uniformity and adhesion of the light shielding layer 30.

[0051] Therefore, the technical solution of the present application can effectively reduce the production cost while maintaining good light shielding performance by using titanium oxide, zinc oxide or hafnium oxide as the material of the light shielding layer 30. Compared with the prior art that uses metal molybdenum as the material of the light shielding layer 30, this solution not only simplifies the process steps, but also reduces the material cost, and is particularly suitable for display panels 100 produced on a large scale. In addition, the selection of these materials also improves the stability and reliability of the light shielding layer 30, and further improves the performance of the display panel 100 in a strong light environment.

[0052] Furthermore, the present application also proposes that the light shielding layer 30 includes a metal oxide 31 and an oxide 32, the metal oxide 31 and the oxide 32 are stacked, and the refractive index of the metal oxide 31 is greater than the refractive index of the oxide 32. Specifically, the metal oxide 31 and the oxide 32 are alternately stacked, the metal oxide 31 is titanium oxide or zirconium oxide, and the oxide 32 is silicon oxide. The thickness of the metal oxide 31 is 80 to 100 nanometers, and the thickness of the oxide 32 is 30 to 50 nanometers.

[0053] The stacking arrangement of the metal oxide 31 and the oxide 32 can be achieved by thin film deposition techniques such as physical vapor deposition (PVD) or chemical vapor deposition (CVD). The high refractive index characteristics of the metal oxide 31 can effectively improve the light shielding performance of the light shielding layer 30, while the low refractive index of the oxide 32 helps to adjust the reflection and transmission of light, thereby optimizing the optical performance of the display panel 100. For example, the refractive index of titanium oxide is about 2.5 to 2.7, while the refractive index of silicon oxide is about 1.45 to 1.55. This difference in refractive index causes multiple reflections and refractions of light when passing through the light shielding layer 30, further enhancing the light shielding effect.

[0054] Therefore, the technical solution of the present application not only improves the light shielding performance of the light shielding layer 30 by stacking the high refractive index metal oxide 31 and the low refractive index oxide 32, but also optimizes the optical performance of the display panel 100 by adjusting the reflection and transmission of light. Compared with the prior art, this solution simplifies the production process and reduces the production cost while ensuring the light shielding effect, and is particularly suitable for the application scenario of the display panel 100 with high light shielding performance requirements.

[0055] Furthermore, the present application also proposes that the metal oxide 31 and the oxide are alternately stacked, the metal oxide 31 is titanium oxide or zirconium oxide, and the oxide 32 is silicon oxide.

[0056] Specifically, the alternating stacking structure of metal oxide 31 and oxide 32 can be achieved by thin film deposition techniques such as chemical vapor deposition (CVD) or physical vapor deposition (PVD). The thickness of metal oxide 31 is controlled at 80 to 100 nanometers, and the thickness of oxide is controlled at 30 to 50 nanometers. This alternating stacking structure can be achieved by multiple deposition and etching processes to ensure the thickness and uniformity of each layer. For example, a layer of titanium oxide or zirconium oxide is first deposited, and then a layer of silicon oxide is deposited thereon, and this process is repeated until the desired number of layers is reached.

[0057] Therefore, this alternately stacked structure can effectively improve the light shielding performance of the light shielding layer 30 and optimize the optical properties. The high refractive index of the metal oxide 31 combined with the low refractive index of the oxide 32 can better control the reflection and transmission of light, thereby reducing the impact of light on the polysilicon layer 40. In addition, this structure can also enhance the mechanical and thermal stability of the light shielding layer 30, reducing deformation and failure under high temperature or mechanical stress.

[0058] Compared with the prior art, the technical solution of the present application not only improves the light shielding effect of the light shielding layer 30, but also simplifies the production process and reduces the cost by alternately stacking the metal oxide 31 and the oxide 32. This structural design enables the light shielding layer 30 to maintain good performance in a strong light environment, reduces the off-state leakage current phenomenon of the thin film transistor, and thus improves the reliability and image quality of the display panel 100.

[0059] Furthermore, the present application also proposes that the thickness of the metal oxide 31 is 80 to 100 nanometers, and the thickness of the oxide 32 is 30 to 50 nanometers. The metal oxide 31 and the oxide 32 are alternately stacked, the metal oxide 31 is titanium oxide or zirconium oxide, and the oxide is silicon oxide.

[0060] Specifically, the thickness of the metal oxide 31 is controlled within the range of 80 to 100 nanometers, which can effectively improve the light shielding performance of the light shielding layer 30 while ensuring good interface characteristics between it and the polysilicon layer 40. The thickness of the oxide is controlled within the range of 30 to 50 nanometers, which can further optimize the refractive index matching of the light shielding layer 30, reduce light reflection and scattering, and thus improve the optical performance of the display panel 100. As a preferred embodiment, the alternating stacking structure of the metal oxide 31 and the oxide 32 can be achieved by chemical vapor deposition (CVD) or physical vapor deposition (PVD) process to ensure precise control of the thickness of each layer.

[0061] Therefore, the technical solution of the present application optimizes the optical performance of the light shielding layer 30 by precisely controlling the thickness of the metal oxide 31 and the oxide 32, and solves the problem of optical performance degradation caused by uneven thickness of the light shielding layer 30 in the prior art. Compared with the prior art, the present solution not only improves the light shielding effect, but also simplifies the production process and reduces the production cost.

[0062] Furthermore, the present application also proposes that nanoparticles are doped in the light-shielding layer 30, and the nanoparticles are gold or silver nanoparticles. Specifically, by doping the light-shielding layer 30 with gold or silver nanoparticles, the light-shielding layer 30 can effectively improve the light-shielding performance, while enhancing the electrical conductivity and optical properties of the material. For example, gold nanoparticles can significantly enhance the absorption of light within a specific wavelength range due to their surface plasmon resonance effect, thereby improving the light-shielding effect. As a preferred embodiment, silver nanoparticles can also be used as a doping material in the light-shielding layer 30 due to their higher electrical conductivity and lower cost, thereby further optimizing the performance of the light-shielding layer 30.

[0063] Therefore, the technical solution of the present application not only improves the light shielding performance of the light shielding layer 30 by doping nanoparticles, but also improves the conductivity and optical properties of the material. Compared with the prior art, this solution simplifies the production process and reduces the production cost while maintaining high performance, thus solving the problem that the prior art is difficult to be widely used due to complex process and high cost.

[0064] Furthermore, the present application also proposes that a microlens array layer 90 is provided between the light shielding layer 30 and the polysilicon layer 40. The microlens array layer 90 is composed of a plurality of microlens units, which may be circular, square or other shapes, and whose size is usually between a few microns and tens of microns. The microlens array layer 90 can be prepared by processes such as photolithography, etching or imprinting. Specifically, a pattern of microlenses can be formed by steps such as photoresist coating, exposure, and development, and then a curved structure of the microlenses is formed by thermal reflow or etching processes. As a preferred embodiment, the material of the microlens array layer 90 can be selected from transparent materials with a high refractive index, such as silicon dioxide or silicon nitride, to enhance the focusing effect of light.

[0065] The microlens array layer 90 can effectively improve the distribution of light. Specifically, the microlens array layer 90 can focus the incident light to a specific area of ​​the polysilicon layer 40, thereby improving the efficiency of light energy utilization. As a result, the optical performance between the light shielding layer 30 and the polysilicon layer 40 is optimized, reducing the scattering and loss of light. In addition, the microlens array layer 90 can also reduce the thickness requirement of the light shielding layer 30 to a certain extent, thereby simplifying the process and reducing production costs.

[0066] The technical solution of the present application solves the problems of complicated process and high cost caused by the large thickness of the light shielding layer 30 in the prior art by setting a microlens array layer 90 between the light shielding layer 30 and the polysilicon layer 40. The introduction of the microlens array layer 90 not only improves the utilization efficiency of light, but also reduces the thickness requirement of the light shielding layer 30 by optimizing the optical performance, thereby simplifying the preparation process and reducing the production cost. Compared with the prior art, this solution significantly improves the preparation efficiency and economic benefits of the display panel 100 while ensuring the light shielding effect.

[0067] Furthermore, the present application also proposes that a transition layer 101 is provided between the light shielding layer 30 and the buffer layer 20 , and the transition layer 101 is used to enhance the adhesion between the light shielding layer 30 and the buffer layer 20 .

[0068] Specifically, the transition layer 101 can be implemented by a variety of materials. For example, the transition layer 101 can be made of materials such as silicon oxide, silicon nitride or aluminum oxide. These materials have good adhesion properties and can effectively improve the bonding strength between the light shielding layer 30 and the buffer layer 20. As a preferred embodiment, the thickness of the transition layer 101 can be controlled between 10 and 30 nanometers to ensure that it can enhance adhesion without significantly affecting the thickness of the overall structure. In addition, the transition layer 101 can be formed by processes such as chemical vapor deposition (CVD) or physical vapor deposition (PVD), which can ensure the uniformity and density of the transition layer 101.

[0069] Thus, the technical solution solves the problem of insufficient adhesion between the light shielding layer 30 and the buffer layer 20 by introducing the transition layer 101. The provision of the transition layer 101 not only improves the stability of the structure, but also reduces interlayer peeling or interface defects caused by insufficient adhesion, thereby improving the reliability and service life of the display panel 100. Compared with the prior art, the solution does not require complex process adjustments, and has a lower material cost, and can effectively improve the performance of the display panel 100 without significantly increasing the production cost.

[0070] See also Figure 5 The present application also provides a method for preparing a display panel, including:

[0071] S10 provides a glass substrate, wherein the glass substrate has a first surface and a second surface that are opposite to each other.

[0072] S20: providing a buffer layer on the first side.

[0073] S30: disposing a light shielding layer on a side of the buffer layer away from the glass substrate, wherein the light shielding layer comprises a metal oxide material with light shielding property.

[0074] Specifically, the light shielding layer is made of TiO2.

[0075] S40: a polysilicon layer is disposed on a side of the light shielding layer away from the buffer layer to which it belongs, and the light shielding layer and the polysilicon layer are exposed and patterned together.

[0076] S50: disposing an insulating layer on a side of the polysilicon layer away from the light shielding layer.

[0077] S60 provides a gate layer on a side of the insulating layer away from the polysilicon layer.

[0078] S70 provides an interlayer insulating layer on a side of the gate layer away from the insulating layer.

[0079] S80: connecting the source and drain layer through the interlayer insulating layer, the insulating layer and the polysilicon layer.

[0080] Using the above method, the buffer layer is placed at the bottom layer, directly contacting the glass substrate; the TiO2 light shielding layer is placed above the buffer layer. This design utilizes the high chemical stability of TiO2 to avoid contamination of polysilicon, while its good thermal insulation performance helps amorphous silicon obtain better crystallinity after excimer laser annealing (ELA).

[0081] The polysilicon layer and the light shielding layer pattern share the same photomask for exposure, which reduces one mask step, reduces production costs and increases production capacity. During dry etching, it is necessary to add gas for etching TiO2 (such as Cl2 or BCl3) to ensure that the etching effects of TiO2 and polysilicon are consistent and avoid the risk of pattern breakage.

[0082] The thickness of the TiO2 light-shielding layer can be controlled between 100nm and 200nm, which can not only meet the light-shielding requirements but also reduce material costs. The TiO2 film layer is deposited using magnetron sputtering or ion beam sputtering technology to ensure the uniformity of the film layer and further optimize the optical performance and process stability of the display panel.

[0083] This technical solution effectively reduces the impact of strong light on thin-film transistors and reduces the off-state leakage current phenomenon by setting a light-shielding layer of metal oxide material with light-shielding properties, thereby improving the image quality and reliability of the display panel. Compared with the existing technology, this solution not only simplifies the production process, but also reduces production costs, and solves the technical problem that vehicle-mounted display products are prone to leakage current under high-brightness backlight conditions.

[0084] See also Figure 6 Another embodiment of the present application further provides a display device 1000, comprising the display panel 100 described in the above embodiment. Since the display panel 100 has been described in detail in the above embodiment, the display panel 100 in the above embodiment will not be described in detail in the present application embodiment.

[0085] The display panel, preparation method and display device provided by the embodiments of the present application are described in detail above. The principles and implementation methods of the present application are described in detail using specific examples herein. The description of the above embodiments is only used to help understand the present application. At the same time, for those skilled in the art, according to the idea of ​​the present application, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as limiting the present application.

Claims

1. A display panel, characterized in that: include: A glass substrate having a first surface and a second surface arranged opposite to each other; A buffer layer, disposed on the first surface; A light shielding layer is arranged on a side of the buffer layer away from the glass substrate; A polysilicon layer is disposed on a side of the light shielding layer away from the buffer layer; An insulating layer is arranged on a side of the polysilicon layer away from the light shielding layer; A gate layer, arranged on a side of the insulating layer away from the polysilicon layer; An interlayer insulating layer, arranged on a side of the gate layer away from the insulating layer; A source-drain electrode layer, passing through the interlayer insulating layer and the insulating layer and connected to the polysilicon layer; Wherein, the light-shielding layer comprises a metal oxide material with light-shielding property.

2. The display panel according to claim 1, characterized in that: The material used for the light shielding layer is one of titanium oxide, zinc oxide and hafnium oxide.

3. The display panel according to claim 1, characterized in that: The light shielding layer includes a metal oxide and an oxide, the metal oxide and the oxide are stacked, and the refractive index of the metal oxide is greater than the refractive index of the oxide.

4. The display panel according to claim 3, characterized in that: The metal oxide and the oxide are stacked alternately, the metal oxide is titanium oxide or zirconium oxide, and the oxide is silicon oxide.

5. The display panel according to claim 3, characterized in that: The thickness of the metal oxide is 80 to 100 nanometers, and the thickness of the oxide is 30 to 50 nanometers.

6. The display panel according to claim 1, characterized in that: The light shielding layer is doped with nanoparticles, and the nanoparticles are gold or silver nanoparticles.

7. The display panel according to claim 1, characterized in that: A microlens array layer is arranged between the light shielding layer and the polysilicon layer.

8. The display panel according to claim 1, characterized in that: A transition layer is arranged between the light-shielding layer and the buffer layer, and the transition layer is used to enhance the adhesion between the light-shielding layer and the buffer layer.

9. A method for preparing a display panel, characterized in that: include: Providing a glass substrate, wherein the glass substrate has a first surface and a second surface disposed opposite to each other; Disposing a buffer layer on the first side; A light shielding layer is provided on a side of the buffer layer away from the glass substrate, wherein the light shielding layer comprises a metal oxide material having light shielding property; A polysilicon layer is disposed on a side of the light shielding layer away from the buffer layer, and the light shielding layer and the polysilicon layer are exposed and patterned together; An insulating layer is provided on a side of the polysilicon layer away from the light shielding layer; Disposing a gate layer on a side of the insulating layer away from the polysilicon layer; Disposing an interlayer insulating layer on a side of the gate layer away from the insulating layer; A source-drain layer is connected to the polysilicon layer through the interlayer insulating layer and the insulating layer.

10. A display device, characterized in that: Comprising the display panel as claimed in any one of claims 1 to 8.

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