Organometallic complex and light-emitting device

Abstract

Provided are an organometallic complex useful as a light-emitting material and a light-emitting device. Provided is an organometallic complex represented by general formula (G1) wherein R2 and R8 represent a deuterium-containing alkyl group having 1 to 10 carbon atoms, R1, R3 to R7, and R9 to R26 each independently represent hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 18 carbon atoms, and at least one of R4 to R6 represents an alkyl group having 1 to 10 carbon atoms, and at least one of R22 to R26 represents an alkyl group having 3 to 10 carbon atoms. # imgabs0 #

Description

Technical Field

[0001] One aspect of the present invention relates to an organometallic complex, an organic compound, a light-emitting device, a light-receiving device, a light-emitting and light-receiving device, a light-emitting device, a light-emitting and light-receiving device, a display device, an electronic device, a lighting device, and an electronic device. Note that one aspect of the present invention is not limited to the above technical field. One aspect of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method. In addition, one aspect of the present invention relates to a process, a machine, a manufacture, or a composition of matter. Thus, more specifically, as an example of the technical field of one aspect of the present invention disclosed in this specification, semiconductor devices, display devices, liquid crystal display devices, light-emitting devices, lighting devices, power storage devices, storage devices, imaging devices, driving methods of these devices, or manufacturing methods of these devices can be cited. Background Art

[0002] The practical application of organic EL devices (organic EL elements), typified by light-emitting devices, light-receiving devices, and light-emitting and light-receiving devices that use electroluminescence (EL) of organic compounds, has been very active.

[0003] For example, in the basic structure of a light-emitting device, an organic compound layer (EL layer) containing a light-emitting material is sandwiched between a pair of electrodes. By applying a voltage to this device, carriers are injected, and using the recombination energy of these carriers, light emission from the light-emitting material can be obtained.

[0004] In addition, in the basic structure of a light-receiving device, an organic compound layer (active layer) containing a photoelectric conversion material is sandwiched between a pair of electrodes. By this device absorbing light energy and generating carriers, electrons from the photoelectric conversion material can be obtained.

[0005] For example, it is known that pixels in a display area include a functional panel having functions of a light-emitting element (light-emitting device) and a photoelectric conversion element (light-receiving device) (Patent Document 1).

[0006] As described above, displays or lighting devices using organic EL devices can be suitably used for various electronic devices, and research and development of organic EL devices with better efficiency and longer life have been increasingly active.

[0007] The characteristics of organic EL devices have been significantly improved, but they are still not sufficient to meet the high requirements for various characteristics such as efficiency or durability. In particular, in order to solve problems such as burn-in, which are unique to organic EL devices, the decrease in efficiency due to deterioration should be as small as possible.

[0008] Since deterioration is greatly affected by the luminescent center material and the materials around it, the development of organic compound materials including organometallic complexes and the like with good characteristics has been increasingly active.

[0009] [Patent Document 1] WO2020 / 152556 Summary of the Invention

[0010] An object of one aspect of the present invention is to provide a novel organometallic complex. In addition, an object of one aspect of the present invention is to provide an organometallic complex with a stable excited state. In addition, an object of one aspect of the present invention is to provide an organometallic complex that can be used as a luminescent material. In addition, an object of one aspect of the present invention is to provide an organometallic complex that is easy to synthesize. In addition, an object of one aspect of the present invention is to provide a light-emitting device with a long driving life. In addition, an object of one aspect of the present invention is to provide a light-emitting device with a small voltage change during driving. In addition, an object of one aspect of the present invention is to provide a novel light-emitting device. In addition, an object of one aspect of the present invention is to reduce the manufacturing cost of the light-emitting device. In addition, an object of one aspect of the present invention is to provide a light-emitting device, an electronic device, or a lighting device with low power consumption.

[0011] In addition, an object of one aspect of the present invention is to provide an organometallic complex in which a part of the structure is selectively deuterated. In addition, an object of one aspect of the present invention is to perform molecular design that can reduce the complexity of the synthesis route, high temperature and high pressure of the synthesis, etc., and synthesize the organometallic complex that has undergone such molecular design.

[0012] Note that the description of these objects does not preclude the existence of other objects. One aspect of the present invention does not need to achieve all of the above objects. Objects other than the above objects can be obviously seen from the description in the specification, drawings, claims, etc., and objects other than the above objects can be extracted from these descriptions.

[0013] One aspect of the present invention is an organometallic complex represented by the following general formula (G1).

[0014] [Chemical Formula 1]

[0015] In the above general formula (G1), R 2 and R 8 represent an alkyl group having 1 to 10 carbon atoms containing deuterium, R 1 , R 3 to R 7 and R 9 to R 26Each independently represents hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 18 carbon atoms, R 4 to R 6 at least one of which represents an alkyl group having 1 to 10 carbon atoms, and R 22 to R 26 at least one of which represents an alkyl group having 3 to 10 carbon atoms.

[0016] In the organometallic complex having the above structure, more preferably, R 23 and R 25 represent an alkyl group having 3 to 10 carbon atoms.

[0017] One embodiment of the present invention is an organometallic complex represented by the following general formula (G1).

[0018] [Chemical formula 2]

[0019] In addition, in the above general formula (G1), R 2 and R 8 represent an alkyl group having 1 to 10 carbon atoms containing deuterium, R 5 represents an alkyl group having 1 to 10 carbon atoms, R 1 , R 3 , R 4 , R 6 , R 7 and R 9 to R 26 each independently represent hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 18 carbon atoms, and R 22 to R 26 at least one of which represents an alkyl group having 3 to 10 carbon atoms.

[0020] One embodiment of the present invention is an organometallic complex represented by the following general formula (G1).

[0021] [Chemical formula 3]

[0022] In the above general formula (G1), R 5 represents an alkyl group having 1 to 10 carbon atoms, R 2 and R 8 represent an alkyl group having 1 to 10 carbon atoms containing deuterium, R 23 and R 25 represent an alkyl group having 3 to 10 carbon atoms, R 1 , R 3 , R 4 , R6 , R 7 , R 9 to R 22 , R 24 and R 26 each independently represents hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 18 carbon atoms.

[0023] One embodiment of the present invention is an organometallic complex represented by the following general formula (G2).

[0024] [Chemical formula 4]

[0025] In the above general formula (G2), R 1 , R 3 , R 4 , R 6 , R 7 , R 9 to R 22 , R 24 and R 26 each independently represents hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 18 carbon atoms.

[0026] One embodiment of the present invention is an organometallic complex represented by the following structural formula (100).

[0027] [Chemical formula 5]

[0028] One embodiment of the present invention is a light-emitting device using the above organometallic complex. In addition, one embodiment of the present invention is a light-emitting device including a light-emitting layer containing the above organometallic complex. In addition, one embodiment of the present invention is a light-emitting device including a light-emitting device using the above organometallic complex and a light-receiving device.

[0029] In addition, one embodiment of the present invention is a light-emitting device including the light-emitting device having the above structures, and a transistor or a substrate.

[0030] In addition, one embodiment of the present invention is an electronic device including the light-emitting device having the above structures, a detection unit, an input unit, or a communication unit.

[0031] In addition, one embodiment of the present invention is a lighting device including the light-emitting device having the above structures and a housing.

[0032] According to one aspect of the present invention, a novel organometallic complex can be provided. In addition, according to one aspect of the present invention, an organometallic complex with a stable excited state can be provided. In addition, according to one aspect of the present invention, an organometallic complex that can be used as a luminescent material can be provided. In addition, according to one aspect of the present invention, an organometallic complex that is easy to synthesize can be provided. In addition, according to one aspect of the present invention, a novel light-emitting device can be provided. In addition, according to one aspect of the present invention, a light-emitting device with a long driving life can be provided. In addition, according to one aspect of the present invention, a light-emitting device with a small voltage change during driving can be provided. In addition, according to one aspect of the present invention, the manufacturing cost of a light-emitting device can be reduced. In addition, according to one aspect of the present invention, a light-emitting device, electronic device, or lighting device with low power consumption can be provided.

[0033] Note that the description of these effects does not preclude the existence of other effects. In addition, one aspect of the present invention does not necessarily have all of the above effects. In addition, effects other than the above can be known and extracted from the descriptions in the specification, drawings, claims, etc. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1A and Figure 1B is a diagram illustrating the structure of a light-emitting device according to an embodiment; Figures 2A to 2E is a diagram illustrating the structure of a light-emitting device according to an embodiment; Figure 3A and Figure 3B are a top view and a cross-sectional view of a light-emitting device; Figures 4A to 4D is a diagram showing a light-emitting device; Figures 5A to 5E is a cross-sectional view showing an example of a manufacturing method of a light-emitting device; Figure 6A and 6B is a cross-sectional view showing an example of a manufacturing method of a light-emitting device; Figures 7A to 7D is a cross-sectional view showing an example of a manufacturing method of a light-emitting device; Figures 8A to 8C is a cross-sectional view showing an example of a manufacturing method of a light-emitting device; Figures 9A to 9C is a cross-sectional view showing an example of a manufacturing method of a light-emitting device; Figures 10A to 10C is a cross-sectional view showing an example of a manufacturing method of a light-emitting device; Figures 11A to 11G is a top view showing an example of the structure of a pixel; Figures 12A to 12Iis a top view showing an example of the structure of a pixel; Figure 13A and Figure 13B is a perspective view showing an example of the structure of a display module; Figure 14A and Figure 14B is a cross-sectional view showing an example of the structure of a light-emitting device; Figure 15 is a perspective view showing an example of the structure of a light-emitting device; Figure 16A is a cross-sectional view showing an example of the structure of a light-emitting device, Figure 16B and Figure 16C is a cross-sectional view showing an example of the structure of a transistor; Figure 17 is a cross-sectional view showing an example of the structure of a light-emitting device; Figures 18A to 18C is a cross-sectional view and a top view showing an example of the structure of a light-emitting device; Figures 19A to 19D is a cross-sectional view showing an example of the structure of a light-emitting device; Figures 20A to 20C is a cross-sectional view and a top view showing an example of the structure of a light-emitting device; Figures 21A to 21D is a diagram showing an example of an electronic device; Figures 22A to 22F is a diagram showing an example of an electronic device; Figures 23A to 23G is a diagram showing an example of an electronic device; Figure 24 is the 6 ) 1 H NMR spectrum of Pt(mmtBubOcz35dm4tBuppy-d; Figure 25A is a diagram illustrating the absorption spectrum and the emission spectrum of a dichloromethane solution of Pt(mmtBubOcz35dm4tBuppy-d 6 ), Figure 25B is a magnified view of the absorption spectrum of a dichloromethane solution of Pt(mmtBubOcz35dm4tBuppy-d 6 ); Figure 26 is a diagram illustrating the structure of a device according to an embodiment; Figure 27 is a diagram illustrating the luminance-current density characteristics of Light-Emitting Device 1A, Light-Emitting Device 1B, Comparative Light-Emitting Device 2, and Comparative Light-Emitting Device 3; Figure 28 is a diagram illustrating the luminance-voltage characteristics of Light-Emitting Device 1A, Light-Emitting Device 1B, Comparative Light-Emitting Device 2, and Comparative Light-Emitting Device 3; Figure 29 is a graph showing the current efficiency-current density characteristics of light-emitting device 1A, light-emitting device 1B, comparative light-emitting device 2, and comparative light-emitting device 3; Figure 30 is a graph showing the current density-voltage characteristics of light-emitting device 1A, light-emitting device 1B, comparative light-emitting device 2, and comparative light-emitting device 3; Figure 31 is a graph showing the blue index-current density characteristics of light-emitting device 1A, light-emitting device 1B, comparative light-emitting device 2, and comparative light-emitting device 3; Figure 32 is a graph showing the external quantum efficiency-current density characteristics of light-emitting device 1A, light-emitting device 1B, comparative light-emitting device 2, and comparative light-emitting device 3; Figure 33 is a graph showing the electroluminescence spectra of light-emitting device 1A, light-emitting device 1B, comparative light-emitting device 2, and comparative light-emitting device 3; Figure 34 is a graph showing the change in luminance of light-emitting device 1A and light-emitting device 1B with respect to the driving time; Figure 35 is Pt(mmtBubOcz35dm4tBuppy-d 6 ) and Pt(mmtBubOcz35dm4tBuppy-d 6 ) of the emission spectrum of the PMMA dispersion film; Figure 36 is a graph showing the electroluminescence spectra of light-emitting devices 5A to 5D; Figure 37 is a graph showing the electroluminescence spectra of comparative light-emitting devices 6A to 6D; Figure 38 is a graph showing the current efficiency-current density characteristics of light-emitting devices 5A to 5D; Figure 39 is a graph showing the current efficiency-current density characteristics of comparative light-emitting devices 6A to 6D; Figure 40 is a graph showing the external quantum efficiency-current density characteristics of light-emitting devices 5A to 5D; Figure 41 is a graph showing the external quantum efficiency-current density characteristics of comparative light-emitting devices 6A to 6D; Figure 42 is a graph showing the blue index-current density characteristics of light-emitting devices 5A to 5D; Figure 43It is a diagram showing the blue index-current density characteristics of the comparative light-emitting devices 6A to 6D; Figure 44 It is a diagram showing the luminance-voltage characteristics of the light-emitting devices 5A to 5D; Figure 45 It is a diagram showing the luminance-voltage characteristics of the comparative light-emitting devices 6A to 6D; Figure 46 It is a diagram showing the current density-voltage characteristics of the light-emitting devices 5A to 5D; Figure 47 It is a diagram showing the current density-voltage characteristics of the comparative light-emitting devices 6A to 6D; Figure 48 It is a diagram showing the luminance-current density characteristics of the light-emitting devices 5A to 5D; Figure 49 It is a diagram showing the luminance-current density characteristics of the comparative light-emitting devices 6A to 6D; Figure 50 It is a diagram showing the calculation method of the luminous lifetime. Detailed Description of the Invention

[0035] Embodiment 1 In this embodiment, an organometallic complex of one aspect of the present invention and a light-emitting device using the organometallic complex are described.

[0036] <Structural Example of Light-Emitting Device> First, the following is referred to Figure 1A and Figure 1B to describe the structure of a light-emitting device of one aspect of the present invention.

[0037] Figure 1A It is a cross-sectional schematic view of a light-emitting device 10 of one aspect of the present invention.

[0038] The light-emitting device 10 includes a pair of electrodes (a first electrode 101 and a second electrode 102), and includes an organic compound layer 103 provided between the pair of electrodes. The organic compound layer 103 includes at least a light-emitting layer 113.

[0039] In addition, Figure 1A the shown organic compound layer 103 includes functional layers such as a hole injection layer 111, a hole transport layer 112, an electron transport layer 114, and an electron injection layer 115 in addition to the light-emitting layer 113.

[0040] Note that, although in the present embodiment, the first electrode 101 in a pair of electrodes is described as the anode and the second electrode 102 as the cathode, the structure of the light-emitting device 10 is not limited thereto. That is, the first electrode 101 may be used as the cathode and the second electrode 102 as the anode, with the stacking order of the respective layers between the electrodes being reversed. That is, a hole injection layer 111, a hole transport layer 112, a light-emitting layer 113, an electron transport layer 114, and an electron injection layer 115 may be stacked in this order from the anode side.

[0041] Note that the structure of the organic compound layer 103 is not limited to Figure 1A the structure shown, and it may include at least one selected from the hole injection layer 111, the hole transport layer 112, the electron transport layer 114, and the electron injection layer 115. Alternatively, the organic compound layer 103 may include a functional layer having the following functions: capable of reducing the injection barrier of holes or electrons; capable of improving the transportability of holes or electrons; capable of hindering the transportability of holes or electrons; or capable of suppressing the quenching phenomenon caused by the electrodes. Note that the functional layer may be a single layer or a structure in which multiple layers are stacked.

[0042] Figure 1B is a cross-sectional schematic diagram showing Figure 1A an example of the light-emitting layer 113 shown. Figure 1B The light-emitting layer 113 shown includes a host material 118 (organic compound 118_1 and organic compound 118_2) and a guest material 119.

[0043] In addition, as the guest material 119, a luminescent organometallic complex may be used, and as the luminescent organometallic complex, a substance capable of emitting phosphorescence (hereinafter also referred to as a phosphorescent compound) is preferably used. In the following description, the structure in which an organometallic complex is used as the guest material 119 will be described.

[0044] In the present invention, an organometallic complex having platinum (Pt) as the central metal is used as the guest material 119. The organometallic complex used in the present invention contains a pyridine ring coordinated to the central metal, and has an alkyl group containing deuterium at the 3-position and 5-position of the pyridine ring. In addition, a phenyl group is present at the 4-position of the pyridine ring, and the phenyl group also contains an alkyl group.

[0045] In the present specification and the like, hydrogen includes protium and deuterium. Deuterium refers to the stable isotope of hydrogen with a mass number of 2. Protium refers to the stable isotope of hydrogen with a mass number of 1. Since the carbon-deuterium bond has a larger bond dissociation energy than the carbon-protium bond, in an organometallic complex containing a pyridine ring, by introducing an alkyl group containing deuterium to the carbon atoms at the 3-position and 5-position of the pyridine ring with a relatively high spin density in the triplet excited state, the stability of the molecule can be improved. In addition, bond dissociation in the excited state can be inhibited to improve the stability of the organometallic complex. Further, by introducing an alkyl group containing deuterium to the carbon atoms at the 3-position and 5-position of the pyridine ring where the distribution of the lowest unoccupied molecular orbital (LUMO) is concentrated, the state of the LUMO receiving electrons, that is, the stability of the organometallic complex in the reduced state, can be improved.

[0046] In addition, in an organometallic complex containing a pyridine ring, by introducing an alkyl group containing deuterium, a steric hindrance effect is presented to the phenyl group bonded to the 4-position of the pyridine ring. The rotation of this phenyl group can be inhibited and the thermal properties of the organometallic complex can be improved, such as improving sublimability. In addition, the vibration of the organometallic complex can be inhibited and thermal deactivation from the excited state can be inhibited.

[0047] In addition, by introducing a phenyl group to the carbon atom at the 4-position between the carbon atoms at the 3-position and 5-position of the pyridine ring where the distribution of the LUMO is concentrated, the distribution of the LUMO can be diffused. In addition, the LUMO energy level can be stabilized and the stability of the organometallic complex in the reduced state can be improved.

[0048] In addition, in an organometallic complex containing a pyridine ring, by introducing a phenyl group to the carbon atom at the 4-position of this pyridine ring, the planarity of the organometallic complex can be improved. Thereby, when using this organometallic complex as the guest material of the light-emitting layer of a light-emitting device, a stronger molecular orientation is induced and it is easier to orient in the direction parallel to the substrate plane. In addition, when the organometallic complex emits light, light is emitted in the direction perpendicular to the transition dipole moment related to the light emission of the organometallic complex. Therefore, when the direction of the transition dipole moment of the organometallic complex is parallel to the substrate plane, the amount of light emitted from the organometallic complex in the direction perpendicular to the substrate plane increases, and thereby the light extraction efficiency of the light-emitting device can be improved. Therefore, the organometallic complex is preferably oriented in such a way that the transition dipole moment related to the light emission of the organometallic complex is parallel to the substrate plane.

[0049] In addition, when the phenyl group bonded to the 4-position of the pyridine ring contains an alkyl group, the intermolecular interaction can be inhibited. For example, in Figure 1BIn the light-emitting layer 113 shown, by using the organometallic complex of the present invention as the guest material 119, the interaction between the guest material 119 and the host material 118 (one or both of the organic compound 118_1 and the organic compound 118_2) can be prevented, and thus the luminous efficiency of the light-emitting device 10 can be improved.

[0050] Therefore, the organometallic complex of the present invention can be suitably used, for example, for the light-emitting layer of a light-emitting device. In addition, the organometallic complex of the present invention can be suitably used, for example, for a layer in contact with the light-emitting layer of a light-emitting device.

[0051] <Examples of organometallic complexes> One embodiment of the present invention is an organometallic complex having platinum (Pt) as a central metal represented by the following general formula. As a material for a light-emitting device, an organometallic complex containing platinum (Pt) is a very suitable substance.

[0052] One embodiment of the present invention is an organometallic complex represented by the general formula (G1).

[0053] [Chemical formula 6]

[0054] Note that in the above general formula (G1), R 2 and R 8 represent an alkyl group having 1 to 10 carbon atoms containing deuterium, R 1 , R 3 to R 7 and R 9 to R 26 each independently represent hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 18 carbon atoms, and at least one of R 4 to R 6 represents an alkyl group having 1 to 10 carbon atoms, and at least one of R 22 to R 26 represents an alkyl group having 3 to 10 carbon atoms. R 23 and R 25 more preferably represent an alkyl group having 3 to 10 carbon atoms.

[0055] In the above general formula (G1), by bonding a phenyl group to the 4-position of the pyridine ring where the LUMO distribution is concentrated, the LUMO energy level can be stabilized. In addition, in the above general formula (G1), by R 2 and R 8Introduction of an alkyl group containing deuterium makes the phenyl group bonded to the 4-position of the pyridine ring where the LUMO distribution is concentrated liable to twist relative to the pyridine ring. Therefore, it can be adjusted to have an appropriate LUMO energy level, and the emission wavelength of the organometallic complex can be shortened. In particular, in the above general formula (G1), R 2 and R 8 are alkyl groups containing deuterium with 1 to 10 carbon atoms, whereby the bond dissociation of the carbon-deuterium bond is not likely to occur. In addition, by introducing deuterated alkyl groups to the carbon atoms at the 3-position and 5-position of the pyridine ring where the LUMO distribution is concentrated, the state of the LUMO accepting electrons, that is, the stability of the organometallic complex in the reduced state, can be improved.

[0056] In addition, in the above general formula (G1), by introducing an alkyl group with 1 to 10 carbon atoms to at least one of R 4 to R 6 , the intermolecular interaction can be inhibited and the luminous efficiency of the light-emitting device can be improved. In particular, in the above general formula (G1), it is preferable to introduce an alkyl group with 1 to 10 carbon atoms to R 5 . Thereby, the effect of inhibiting the intermolecular interaction can be improved. In addition, the planarity of the organometallic complex can be improved.

[0057] In addition, in the above general formula (G1), by introducing an alkyl group with 1 to 10 carbon atoms to at least one of R 23 to R 25 , the intermolecular interaction can be inhibited. In particular, in the above general formula (G1), it is more preferable to introduce an alkyl group with 1 to 10 carbon atoms to R 23 and R 25 . Thereby, the rotation of the phenyl group bonded to R 23 and R 25 can be inhibited and the thermal properties of the organometallic complex, such as sublimability, can be improved. In addition, since the thermal deactivation of the molecule is inhibited, the quantum efficiency can be improved. Furthermore, the effect of inhibiting the intermolecular interaction can be improved, whereby the luminous efficiency of the light-emitting device can be improved.

[0058] In addition, one embodiment of the present invention is an organometallic complex represented by the following general formula (G2).

[0059] [Chemical formula 7]

[0060] In the above general formula (G2), R 1 , R 3 , R 4 , R 6 , R 7 , R 9 to R 22 , R 24and R 26 each independently represents hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 18 carbon atoms.

[0061] The general formula (G2) is different from the general formula (G1) in that: R 2 and R 8 in the general formula (G1) are limited to a methyl-d 3 group; R 5 is limited to a tert-butyl group; R 23 and R 25 are limited to a tert-butyl group.

[0062] In the above general formula (G2), by limiting R 2 and R 8 to a methyl-d 3 group, the stability of the organometallic complex can be improved. In addition, compared with an alkyl group having 2 or more carbon atoms containing deuterium, the organometallic complex can be synthesized at a lower cost.

[0063] In addition, in the above general formula (G2), by limiting R 5 to a bulky tert-butyl group, the steric hindrance effect on the surrounding materials can be further enhanced.

[0064] In addition, in the above general formula (G2), by limiting R 23 and R 25 to a bulky tert-butyl group, the steric hindrance effect on the surrounding materials can be further enhanced. In addition, the rotation of the phenyl group bonded to R 23 and R 25 can be inhibited and the thermal properties of the organometallic complex, such as sublimability, can be improved. In addition, since the thermal deactivation of the molecule is inhibited, the quantum efficiency can be increased. In addition, the effect of suppressing intermolecular interactions can be enhanced, whereby the luminous efficiency of the light-emitting device can be improved.

[0065] Next, specific examples of substituents that can be used in the organometallic complexes represented by the above general formulas (G1) and (G2) will be described. Note that in the following specific examples, unless otherwise specified, part or all of the hydrogen may also be deuterium. In addition, the groups that can be used in the above general formulas are not limited to the specific examples described below.

[0066] Specific examples of the alkyl group having 1 to 10 carbon atoms include methyl, ethyl, propyl, isopropyl, butyl, sec-butyl, isobutyl, tert-butyl, pentyl, isopentyl, sec-pentyl, tert-pentyl, neopentyl, hexyl, isohexyl, 3-methylpentyl, 2-methylpentyl, 2-ethylbutyl, 1,2-dimethylbutyl, 2,3-dimethylbutyl, 1-ethylhexyl, etc. In particular, tert-butyl is large and has a high effect of suppressing intermolecular interactions, so it is more preferred.

[0067] Specific examples of the alkyl group having 1 to 10 carbon atoms containing deuterium include methyl-d 3 yl, ethyl-d 5 yl, propyl-d 7 yl, 2-propyl-2-dyl, isopropyl-d 7 yl, butyl-d 9 yl, 2-methyl-1-propyl-1,1-d 2 yl, isobutyl-d 9 yl, sec-butyl-d 9 yl, tert-butyl-d 9 yl, pentyl-d 11 yl, isopentyl-d 11 yl, hexyl-d 13 yl, 1-ethylhexyl-1-dyl, etc. In addition, groups in which one or more hydrogens in the groups cited as specific examples of the alkyl group having 1 to 10 carbon atoms are replaced by deuterium can also be cited. In particular, a group in which all hydrogens are replaced by deuterium, such as methyl-d 3 yl, can further improve the stability of the organometallic complex, so it is preferred. In addition, in the case of an organometallic complex incorporating methyl-d 3 yl, the organometallic complex can be synthesized at a lower cost compared to an organometallic complex incorporating an alkyl group having 2 or more carbon atoms containing deuterium, so it is preferred.

[0068] Specific examples of the aryl group having 6 to 18 carbon atoms include phenyl, biphenyl, naphthyl, fluorenyl, phenanthryl, anthryl, tetraphenyl, benzanthryl, triphenylene, pyrenyl, spirobi[9H-fluorene]-yl, etc. When the aryl group having 6 to 18 carbon atoms has a substituent, specific examples of the substituent include an alkyl group having 1 to 4 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, or an aryl group having 6 to 13 carbon atoms.

[0069] <Specific examples> Next, specific examples of the organometallic complex of one embodiment of the present invention having the structures represented by the above general formula (G1) and the above general formula (G2) are shown below.

[0070] [Chemical formula 8]

[0071] [Chemical Formula 9]

[0072] The organometallic complexes represented by the above structural formulas (100) to (116) are an example of the organometallic complexes represented by the above general formulas (G1) and (G2), but the organometallic complexes of one embodiment of the present invention are not limited thereto.

[0073] <Synthesis Method of Organometallic Complex> The synthesis method of the organometallic complex represented by the general formula (G1) will be described below. As the synthesis method of this organometallic complex, various reactions can be used. For example, the organometallic complex represented by the general formula (G1) can be synthesized by the following simple synthesis scheme.

[0074] <<Synthesis Method 1>> First, the pyridylcarbazole derivative (A1) as the starting material of the organometallic complex represented by the general formula (G1) can be synthesized by the following synthesis scheme (s1-1). By reacting the pyridylcarbazole derivative (A'1) in which phenylbenzimidazole is crosslinked with an ether with a hypervalent iodine reagent (A'2), the pyridylcarbazole derivative (A1) can be obtained.

[0075] [Chemical Formula 10]

[0076] Note that in the above synthesis scheme (s1-1), R 2 and R 8 represent an alkyl group having 1 to 10 carbon atoms containing deuterium, R 1 , R 3 to R 7 and R 9 to R 26 each independently represent hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 18 carbon atoms, at least one of R 4 to R 6 represents an alkyl group having 1 to 10 carbon atoms, and at least one of R 22 to R 26 represents an alkyl group having 3 to 10 carbon atoms.

[0077] Next, as shown in the synthesis scheme (s1-2), by reacting the pyridylcarbazole derivative (A1) obtained in the above synthesis scheme (s1-1) with a halogen-containing platinum compound (such as dichloro(1,5-cyclooctadiene)platinum(II)), the organometallic complex represented by the general formula (G1) can be obtained.

[0078] [Chemical Formula 11]

[0079] Note that in the above synthesis scheme (s1-2), R 2 and R 8 represent alkyl groups having 1 to 10 carbon atoms containing deuterium, and R 1 , R 3 to R 7 and R 9 to R 26 each independently represent hydrogen (including deuterium), alkyl groups having 1 to 10 carbon atoms, and substituted or unsubstituted aryl groups having 6 to 18 carbon atoms. At least one of R 4 to R 6 represents an alkyl group having 1 to 10 carbon atoms, and at least one of R 22 to R 26 represents an alkyl group having 3 to 10 carbon atoms.

[0080] <<Synthesis Method 2>> In addition, for example, an organometallic complex represented by the general formula (G1) can be synthesized by the following simple synthesis scheme.

[0081] First, the pyridylcarbazole derivative (B1) as a starting material for the organometallic complex represented by the general formula (G1) can be synthesized by the following synthesis scheme (s2-1). After cyclizing by reacting the pyridylcarbazole derivative (B’1) in which a diamine compound is crosslinked with ether with triethyl orthoformate to obtain the compound represented by (B’2), ion exchange is carried out using ammonium hexafluorophosphate, whereby the pyridylcarbazole derivative (B1) can be obtained.

[0082] [Chemical Formula 12]

[0083] Note that in the above synthesis scheme (s2-1), R 2 and R 8 represent alkyl groups having 1 to 10 carbon atoms containing deuterium, and R 1 , R 3 to R 7 and R 9 to R 26 each independently represent hydrogen (including deuterium), alkyl groups having 1 to 10 carbon atoms, and substituted or unsubstituted aryl groups having 6 to 18 carbon atoms. At least one of R 4 to R 6 represents an alkyl group having 1 to 10 carbon atoms, and at least one of R 22 to R 26 represents an alkyl group having 3 to 10 carbon atoms.

[0084] Next, as shown in synthesis scheme (s2-2), by reacting the pyridylcarbazole derivative (B1) obtained from the above synthesis scheme (s2-1) with a halogen-containing platinum compound (such as dichloro(1,5-cyclooctadiene)platinum(II)), an organometallic complex represented by the general formula (G1) can be obtained.

[0085] [Chemical formula 13]

[0086] In the above synthesis scheme (s2-2), R 2 and R 8 represent an alkyl group having 1 to 10 carbon atoms containing deuterium, and R 1 , R 3 to R 7 and R 9 to R 26 each independently represent hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 18 carbon atoms, at least one of R 4 to R 6 represents an alkyl group having 1 to 10 carbon atoms, and at least one of R 22 to R 26 represents an alkyl group having 3 to 10 carbon atoms.

[0087] Since there are many commercially available or synthesizable types of the above compounds (A'1), (A'2), (B'1) and (B'2), various organometallic complexes represented by the general formula (G1) can be synthesized. Therefore, the organometallic complex of one embodiment of the present invention is characterized by a rich variety.

[0088] Although the above describes an example of the synthesis method of the organometallic complex as one embodiment of the present invention, the present invention is not limited thereto, and it can also be synthesized by any other synthesis method.

[0089] The organometallic complex shown in this embodiment can be used in appropriate combination with the structures shown in other embodiments.

[0090] Embodiment 2 In this embodiment, with reference to Figures 2A to 2E the structure of a light-emitting device using the organometallic complex shown in Embodiment 1 will be described.

[0091] <Basic structure of the light-emitting device> The basic structure of the light-emitting device will be described. Figure 2AA light-emitting device having a structure (single structure) including an organic compound layer having a light-emitting layer between a pair of electrodes is shown. Specifically, an organic compound layer 103 is sandwiched between a first electrode 101 and a second electrode 102.

[0092] In addition, Figure 2B A light-emitting device having a stacked structure (series structure) including a plurality of ( Figure 2B two in this case) organic compound layers (103a, 103b) between a pair of electrodes and including a charge generation layer 106 between the organic compound layers is shown. The light-emitting device having a series structure can achieve a high-efficiency light-emitting device without changing the amount of current.

[0093] The charge generation layer 106 has the following function: when a potential difference is generated between the first electrode 101 and the second electrode 102, electrons are injected into one organic compound layer (103a or 103b) and holes are injected into the other organic compound layer (103b or 103a). Thus, Figure 2B in this case, when a voltage is applied such that the potential of the first electrode 101 is higher than the potential of the second electrode 102, electrons are injected from the charge generation layer 106 into the organic compound layer 103a and holes are injected into the organic compound layer 103b.

[0094] In addition, from the viewpoint of light extraction efficiency, the charge generation layer 106 preferably has light transmittance for visible light (specifically, the visible light transmittance of the charge generation layer 106 is 40% or more). In addition, the charge generation layer 106 functions even if its conductivity is lower than that of the first electrode 101 and the second electrode 102.

[0095] In addition, Figure 2CThe stacked structure of the organic compound layer 103 of a light-emitting device showing one embodiment of the present invention is illustrated. Note that, in this case, the first electrode 101 is used as an anode and the second electrode 102 is used as a cathode. The organic compound layer 103 has a structure in which a hole injection layer 111, a hole transport layer 112, a light-emitting layer 113, an electron transport layer 114, and an electron injection layer 115 are stacked in this order on the first electrode 101. Note that multiple light-emitting layers having different light-emitting colors may be stacked for the light-emitting layer 113. For example, a light-emitting layer containing a light-emitting substance that exhibits red, a light-emitting layer containing a light-emitting substance that exhibits green, and a light-emitting layer containing a light-emitting substance that exhibits blue may be stacked with or without a layer containing a charge transport material therebetween. Alternatively, a light-emitting layer containing a light-emitting substance that exhibits yellow and a light-emitting layer containing a light-emitting substance that exhibits blue may be combined. Note that the stacked structure of the light-emitting layer 113 is not limited to the above structure. For example, multiple light-emitting layers having the same light-emitting color may be stacked for the light-emitting layer 113. For example, a first light-emitting layer containing a light-emitting substance that exhibits blue and a second light-emitting layer containing a light-emitting substance that exhibits blue may be stacked with or without a layer containing a charge transport material therebetween. When multiple light-emitting layers having the same light-emitting color are stacked, the reliability can sometimes be improved compared to a single layer. In addition, in the case of having multiple organic compound layers as in the series structure shown in Figure 2B each of the organic compound layers also has a structure stacked in the above order from the anode side. In addition, when the first electrode 101 is a cathode and the second electrode 102 is an anode, the stacking order of the organic compound layer 103 is reversed. Specifically, for the first electrode 101 as a cathode, 111 is an electron injection layer, 112 is an electron transport layer, 113 is a light-emitting layer, 114 is a hole transport layer, and 115 is a hole injection layer.

[0096] The light-emitting layer 113 in the organic compound layers (103, 103a, 103b) appropriately combines a light-emitting substance and multiple substances to enable fluorescence emission or phosphorescence emission that exhibits a desired light-emitting color. In addition, the light-emitting layer 113 may have a stacked structure with different light-emitting colors. In this case, different materials may be used as the light-emitting substance and other substances for each light-emitting layer to be stacked. In addition, a structure in which different light-emitting colors are obtained from the multiple organic compound layers (103a, 103b) shown in Figure 2B may be adopted. In this case, different materials may be used as the light-emitting substance and other substances for each light-emitting layer.

[0097] In addition, in a light-emitting device according to one embodiment of the present invention, for example, by making Figure 2CWhen the first electrode 101 shown is a reflective electrode, the second electrode 102 is a semi-transmissive and semi-reflective electrode, and an optical microcavity resonator (microcavity) structure is adopted, the light emission obtained from the light-emitting layer 113 in the organic compound layer 103 can resonate between the two electrodes, so that the light emitted from the second electrode 102 can be enhanced. Thus, high definition is easily achieved. In addition, since the light emission intensity in the front direction of a specific wavelength can be enhanced, low power consumption can be achieved.

[0098] In the case where the first electrode 101 of the light-emitting device is a reflective electrode composed of a laminated structure of a conductive material having reflectivity and a conductive material having translucency (transparent conductive film) located closer to the organic compound layer 103 than the conductive material having reflectivity, optical adjustment can be performed by adjusting the thickness of the transparent conductive film. Specifically, it is preferably adjusted in the following manner: when the wavelength of the light obtained from the light-emitting layer 113 is λ, the optical distance (the product of the thickness and the refractive index) between the first electrode 101 and the second electrode 102 is mλ / 2 (note that m is an integer of 1 or more) or a value near it.

[0099] In addition, in the same case, in order to amplify the desired light (wavelength: λ) obtained from the light-emitting layer 113, it is preferably adjusted in the following manner: the optical distance from the first electrode 101 to the region (light-emitting region) in the light-emitting layer 113 where the desired light can be obtained and the optical distance from the second electrode 102 to the region (light-emitting region) in the light-emitting layer 113 where the desired light can be obtained both become (2m'+1)λ / 4 (note that m' is an integer of 1 or more) or a value near it. Note that the "light-emitting region" described here refers to the recombination region of holes and electrons in the light-emitting layer 113.

[0100] By performing the above optical adjustment, the spectrum of a specific monochromatic light that can be obtained from the light-emitting layer 113 can be narrowed, and thus light emission with good color purity can be obtained.

[0101] In addition, in the above case, strictly speaking, the optical distance between the first electrode 101 and the second electrode 102 can be said to be the total thickness from the reflection region in the first electrode 101 to the reflection region in the second electrode 102. However, since it is difficult to accurately determine the positions of the reflection regions in the first electrode 101 and the second electrode 102, the above effects can be sufficiently obtained by assuming any position in the first electrode 101 and the second electrode 102 as the reflection region. In addition, strictly speaking, the optical distance between the first electrode 101 and the light-emitting layer capable of obtaining desired light can be said to be the optical distance between the reflection region in the first electrode 101 and the light-emitting region in the light-emitting layer capable of obtaining desired light. However, since it is difficult to accurately determine the reflection region in the first electrode 101 and the light-emitting region in the light-emitting layer capable of obtaining desired light, the above effects can be sufficiently obtained by assuming any position in the first electrode 101 as the reflection region and any position in the light-emitting layer capable of obtaining desired light as the light-emitting region.

[0102] Figure 2D The light-emitting device shown is a light-emitting device having a series structure. By adopting a series structure, a light-emitting device capable of high-brightness light emission can be realized. In addition, since the series structure can reduce the current required to obtain the same brightness compared with a single structure, the reliability can be improved. In addition, the power consumption can be reduced.

[0103] Figure 2E The light-emitting device shown is Figure 2B An example of the light-emitting device having a series structure shown, as shown in the accompanying drawings, has a structure in which three organic compound layers (103a, 103b, 103c) sandwich charge generation layers (106a, 106b) and are stacked. The three organic compound layers (103a, 103b, 103c) each include a light-emitting layer (113a, 113b, 113c), and the light-emitting colors of the respective light-emitting layers can be freely combined. For example, the following structure can be adopted: the light-emitting layer 113a emits blue, the light-emitting layer 113b emits any one of red, green, and yellow, and the light-emitting layer 113c emits blue. However, the following structure can also be adopted: the light-emitting layer 113a emits red, the light-emitting layer 113b emits any one of blue, green, and yellow, and the light-emitting layer 113c emits red.

[0104] In addition, in the light-emitting device according to one embodiment of the present invention described above, at least one of the first electrode 101 and the second electrode 102 is a light-transmissive electrode (transparent electrode, semi-transmissive semi-reflective electrode, etc.). When the light-transmissive electrode is a transparent electrode, the visible light transmittance of the transparent electrode is 40% or more and 100% or less, preferably 60% or more and 100% or less. In addition, when the electrode is a semi-transmissive semi-reflective electrode, the visible light reflectance of the semi-transmissive semi-reflective electrode is 20% or more and 80% or less, preferably 40% or more and 70% or less. In addition, the resistivity of these electrodes is preferably 1×10 -2 Ω·cm or less.

[0105] In addition, in the light-emitting device according to one embodiment of the present invention described above, when one of the first electrode 101 and the second electrode 102 is a reflective electrode (reflective electrode), the visible light reflectance of the reflective electrode is 40% or more and 100% or less, preferably 70% or more and 100% or less. In addition, the resistivity of this electrode is preferably 1×10 -2 Ω·cm or less.

[0106] <Specific structure of the light-emitting device> Next, the specific structure of the light-emitting device according to one embodiment of the present invention will be described. In addition, here, a description will be made with reference to a Figure 2D having a series structure. Note that Figure 2A and Figure 2C the light-emitting device having a single structure shown also employs the same structure of the organic compound layer. In addition, when the light-emitting device shown in Figure 2D has a microcavity structure, a reflective electrode is formed as the first electrode 101, and a semi-transmissive semi-reflective electrode is formed as the second electrode 102. Thus, the desired electrode material can be used alone or multiple electrode materials can be used to form the above electrodes in a single layer or a stacked layer. In addition, the second electrode 102 is formed by appropriately selecting a material after forming the organic compound layer 103b.

[0107] <Materials of the light-emitting device> <<Light-emitting layer>> The light-emitting layer (113, 113a, 113b) is a layer containing a light-emitting substance. Note that as the light-emitting substance that can be used for the light-emitting layer (113, 113a, 113b), substances that emit light colors such as blue, purple, blue-violet, green, yellow-green, yellow, orange, and red can be appropriately used. In addition, when including a plurality of light-emitting layers, by using different light-emitting substances in each light-emitting layer, a structure that emits different light colors can be obtained (for example, white light obtained by combining light colors in a complementary color relationship). Furthermore, a stacked structure in which one light-emitting layer contains different light-emitting substances can also be employed.

[0108] In addition, the light-emitting layer (113, 113a, 113b) may contain one or more organic compounds (host materials, etc.) in addition to the light-emitting substance (guest material).

[0109] Specifically, as the light-emitting layer 113, the structure described in Reference Example 1 may be adopted. Figure 1B In the light-emitting layer 113, the weight ratio of the host material 118 is the largest, and the guest material 119 (phosphorescent compound) is dispersed in the host material 118. Preferably, the T 1 energy level of the host material 118 (organic compounds 118_1 and 118_2) of the light-emitting layer 113 is higher than the T 1 energy level of the guest material (guest material 119) of the light-emitting layer 113.

[0110] As the organic compound 118_1, a material with higher electron transport property than hole transport property can be used, and preferably a material with an electron mobility of 1×10 -6 cm 2 / Vs or more can be used. As a material that easily accepts electrons (a material with electron transport property), compounds having a π-deficient heteroaromatic ring skeleton such as nitrogen-containing heteroaromatic compounds and metal complexes such as zinc-based or aluminum-based metal complexes can be used. Examples of compounds having a π-deficient heteroaromatic ring skeleton include oxadiazole derivatives, triazole derivatives, benzimidazole derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, phenanthroline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, triazine derivatives, etc. Examples of zinc-based or aluminum-based metal complexes include metal complexes having a quinoline ligand, a benzoquinoline ligand, an oxazole ligand, or a thiazole ligand.

[0111] Specifically, metal complexes having a quinoline skeleton or a benzoquinoline skeleton can be cited, such as tris(8-hydroxyquinoline)aluminum(III) (abbreviation: Alq), tris(4-methyl-8-hydroxyquinoline)aluminum(III) (abbreviation: Almq 3 ) and bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq 2) Aluminum(III) bis(2-methyl-8-hydroxyquinoline)(4-phenylphenylphenolate) (abbreviation: BAlq), Zinc(II) bis(8-hydroxyquinoline) (abbreviation: Znq), etc. In addition to the above, metal complexes having oxazole or thiazole ligands such as Zinc(II) bis[2-(2-benzoxazolyl)phenylphenolate] (abbreviation: ZnPBO), Zinc(II) bis[2-(2-benzothiazolyl)phenylphenolate] (abbreviation: ZnBTZ), etc. may also be used. Furthermore, in addition to metal complexes, heterocyclic compounds such as 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H-carbazole (abbreviation: CO11), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 9-[4-(4,5-diphenyl-4H-1,2,4-triazol-3-yl)phenyl]-9H-carbazole (abbreviation: CzTAZ1), 2,2’,2”-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II), bathophenanthroline (abbreviation: BPhen), bathocuproine (abbreviation: BCP), etc., 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3’-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3’-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 2-[4-(3,6-diphenyl-9H-carbazol-9-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2CzPDBq-III), 7-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 7mDBTPDBq-II) and 6-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 6mDBTPDBq-II), 2-[3-(3,9’-bi-9H-carbazol-9-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzCzPDBq), 4,6-bis[3-(phenanthren-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-bis[3-(dibenzothiophen-4-yl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), 4,6-bis[3-(9H-carbazol-9-yl)phenyl]pyrimidine (abbreviation: 4,Heterocyclic compounds having a diazine skeleton such as 6mCzP2Pm), heterocyclic compounds having a triazine skeleton such as 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), heterocyclic compounds having a pyridine skeleton such as 3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy), 1,3,5-tris[3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB), and heteroaromatic compounds such as 4,4'-bis(5-methylbenzoxazol-2-yl)stilbene (abbreviation: BzOs). Among the above heterocyclic compounds, heterocyclic compounds having a triazine skeleton, a diazine (pyrimidine, pyrazine, pyridazine) skeleton, or a pyridine skeleton are stable and have good reliability, so they are preferred. Heterocyclic compounds having this skeleton have high electron transport properties and also help to reduce the driving voltage. In addition, a polymer compound such as poly(2,5-pyridinediyl) (abbreviation: PPy), poly[(9,9-dihexylfluorene-2,7-diyl)-co-(pyridine-3,5-diyl)] (abbreviation: PF-Py), poly[(9,9-dioctylfluorene-2,7-diyl)-co-(2,2'-bipyridine-6,6'-diyl)] (abbreviation: PF-BPy) can also be used. The substances described here mainly have an electron mobility of 1×10, -6 cm 2 / Vs or more. Note that any substance other than the above can be used as long as its electron transport property is higher than its hole transport property.

[0112] As the organic compound 118_2, a combination that can form an exciplex with the organic compound 118_1 is preferably used. Specifically, a heteroaromatic ring skeleton rich in π electrons or a skeleton with high donor properties such as an aromatic amine skeleton is preferred. As compounds having a heteroaromatic ring skeleton rich in π electrons, heteroaromatic compounds such as dibenzothiophene derivatives, dibenzofuran derivatives, and carbazole derivatives can be cited. At this time, the organic compound 118_1, the organic compound 118_2, and the guest material 119 (phosphorescent compound) are preferably selected in such a way that the emission peak of the exciplex formed by the organic compound 118_1 and the organic compound 118_2 overlaps with the absorption band of the triplet MLCT (Metal to Ligand Charge Transfer: charge transfer from metal to ligand) transition of the guest material 119 (phosphorescent compound), and more specifically, the absorption band at the longest wavelength. Thereby, a light-emitting device with a significantly improved luminous efficiency can be realized. Note that when a thermally activated delayed fluorescence material is used instead of the phosphorescent compound, the absorption band at the longest wavelength is preferably the singlet absorption band.

[0113] In addition, as the organic compound 118_2, the following hole-transporting materials can be used.

[0114] As the hole-transporting material, a material with higher hole-transporting property than electron-transporting property can be used, and preferably a material with a hole mobility of 1×10 -6 cm 2 / Vs or more is used. Specifically, aromatic amines, carbazole derivatives, aromatic hydrocarbons, stilbene derivatives, etc. can be used. The above hole-transporting materials can also be high-molecular compounds.

[0115] As materials with high hole-transporting property, specifically, as aromatic amine compounds, N,N'-bis(p-tolyl)-N,N'-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), N,N'-bis[4-bis(3-methylphenyl)aminophenyl]-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviation: DNTPD), 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B), etc. can be cited.

[0116] In addition, as carbazole derivatives, specifically, 3-[N-(4-diphenylaminophenyl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzDPA1), 3,6-bis[N-(4-diphenylaminophenyl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzDPA2), 3,6-bis[N-(4-diphenylaminophenyl)-N-(1-naphthyl)amino]-9-phenylcarbazole (abbreviation: PCzTPN2), 3-[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-bis[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2), 3-[N-(1-naphthyl)-N-(9-phenylcarbazol-3-yl)amino]-9-phenylcarbazole (abbreviation: PCzPCN1), etc. can be cited.

[0117] In addition, as carbazole derivatives, 4,4'-di(N-carbazolyl)biphenyl (abbreviation: CBP), 1,3,5-tris[4-(N-carbazolyl)phenyl]benzene (abbreviation: TCPB), 9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: CzPA), 1,4-bis[4-(N-carbazolyl)phenyl]-2,3,5,6-tetraphenylbenzene, etc. can also be cited.

[0118] In addition, as aromatic hydrocarbons, examples include 2-tert-butyl-9,10-bis(2-naphthyl)anthracene (abbreviation: t-BuDNA), 2-tert-butyl-9,10-bis(1-naphthyl)anthracene, 9,10-bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA), 2-tert-butyl-9,10-bis(4-phenylphenyl)anthracene (abbreviation: t-BuDBA), 9,10-bis(2-naphthyl)anthracene (abbreviation: DNA), 9,10-diphenylanthracene (abbreviation: DPAnth), 2-tert-butylanthracene (abbreviation: t-BuAnth), 9,10-bis(4-methyl-1-naphthyl)anthracene (abbreviation: DMNA), 2-tert-butyl-9,10-bis[2-(1-naphthyl)phenyl]anthracene, 9,10-bis[2-(1-naphthyl)phenyl]anthracene, 2,3,6,7-tetramethyl-9,10-bis(1-naphthyl)anthracene, 2,3,6,7-tetramethyl-9,10-bis(2-naphthyl)anthracene, 9,9'-bianthracene, 10,10'-diphenyl-9,9'-bianthracene, 10,10'-bis(2-phenylphenyl)-9,9'-bianthracene, 10,10'-bis[(2,3,4,5,6-pentaphenyl)phenyl]-9,9'-bianthracene, anthracene, tetracene, rubrene, perylene, 2,5,8,11-tetra(tert-butyl)perylene, etc. In addition to these, pentacene, coronene, etc. can also be used. As described above, it is more preferable to use an aromatic hydrocarbon having a hole mobility of 1×10 -6 cm 2 / Vs or more, 14 or more and 42 or less carbon atoms.

[0119] Note that the aromatic hydrocarbon may also have a vinyl skeleton. As aromatic hydrocarbons having a vinyl skeleton, for example, 4,4'-bis(2,2-diphenylethynyl)biphenyl (abbreviation: DPVBi), 9,10-bis[4-(2,2-diphenylethynyl)phenyl]anthracene (abbreviation: DPVPA), etc. can be cited.

[0120] In addition, a polymer compound such as poly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriphenylamine) (abbreviation: PVTPA), poly[N-(4-{N'-[4-(4-diphenylamino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide] (abbreviation: PTPDMA), or poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (abbreviation: Poly-TPD) can also be used.

[0121] In addition, as materials with high hole-transporting properties, for example, 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB or α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-4,4'-diaminobiphenyl (abbreviation: TPD), 4,4',4''-tris(carbazol-9-yl)triphenylamine (abbreviation: TCTA), 4,4',4''-tris[N-(1-naphthyl)-N-phenylamino]triphenylamine (abbreviation: 1'-TNATA), 4,4',4''-tris(N,N-diphenylamino)triphenylamine (abbreviation: TDATA), 4,4',4''-tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine (abbreviation: m-MTDATA), N,N'-bis(9,9'-spirobi[9H-fluorene]-2-yl)-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviation: BSPB), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), N-(9,9-dimethyl-9H-fluoren-2-yl)-N-{9,9-dimethyl-2-[N'-phenyl-N'-(9,9-dimethyl-9H-fluoren-2-yl)amino]-9H-fluoren-7-yl}phenylamine (abbreviation: DFLADFL), N-(9,9-dimethyl-2-diphenylamino-9H-fluoren-7-yl)diphenylamine (abbreviation: DPNF), N-(9,9-spirobi[9H-fluorene]-2-yl)-N,N'N'-triphenyl-1,4-phenylenediamine (abbreviation: DPASF), 4-phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-bis(1-naphthyl)-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBNBB), 4-phenyldiphenyl-(9-phenyl-9H-carbazol-3-yl)amine (abbreviation: PCA1BP), N,N'-bis(9-phenylcarbazol-3-yl)-N,N'-diphenylbenzene-1,3-diamine (abbreviation: PCA2B), N,N',N''-triphenyl-N,N',N''-tris(9-phenylcarbazol-3-yl)benzene-1,3,5-triamine (abbreviation: PCA3B), N-(9,9-diphenyl-9H-fluoren-2-yl)-N,9-diphenyl-9H-carbazol-3-amine (abbreviation: PCAFLP(2)), N-(9,9-diphenyl-9H-fluoren-2-yl)-N,9-diphenyl-9H-carbazol-2-amine (abbreviation: PCAFLP(2)-02), N-(4-biphenyl)-N-(9,9-dimethyl-9H-fluoren-2-yl)-9-phenyl-9H-carbazol-3-amine (abbreviation: PCBiF), N-(biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: PCBBiF), 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]fluorene-2-amine (abbreviation: PCBAF), N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBASF), N-(9,9-spirobi[9H-fluorene]-2-yl)-N,9-diphenylcarbazol-3-amine (abbreviation: PCASF), N,N'-diphenyl-N,N'-bis(4-diphenylaminophenyl)spirobi[9H-fluorene]-2,7-diamine (abbreviation: DPA2SF), N-[4-(9H-carbazol-9-yl)phenyl]-N-(4-phenyl)phenylamine (abbreviation: YGA1BP), N,N'-bis[4-(carbazol-9-yl)phenyl]-N,N'-diphenyl-9,9-dimethylfluorene-2,7-diamine (abbreviation: YGA2F) and other aromatic amine compounds. In addition, 3-[4-(1-naphthyl)phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPN), 9-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]phenanthrene (abbreviation: PCPPn), 3,3'-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP), 1,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP), 3,6-bis(9H-carbazol-9-yl)-9-phenyl-9H-carbazole (abbreviation: PhCzGI), 2,8-bis(9H-carbazol-9-yl)dibenzothiophene (abbreviation: Cz2DBT), 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II), 4,4',4''-(benzene-1,3,5-triyl)tris(dibenzofuran) (abbreviation: DBF3P-II), 4,4',4''-(benzene-1,3,5-triyl)tris(dibenzothiophene) (abbreviation: DBT3P-II), 2,8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III), 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV), 4-[3-(triphenylene-2-yl)phenyl]dibenzothiophene (abbreviation: mDBTPTp-II), etc., amine compounds, carbazole compounds, thiophene compounds, furan compounds, fluorene compounds, triphenylene compounds, phenanthrene compounds, etc. Among the above compounds, compounds having a pyrrole skeleton, a furan skeleton, a thiophene skeleton, and an aromatic amine skeleton are stable and have good reliability, so they are preferred. In addition, the compounds having this skeleton have high hole transport properties and also help to reduce the driving voltage.,

[0122] In addition, a substance that exhibits fluorescence emission (fluorescent emission substance) can also be used for the light-emitting layer. At this time, the excitation energy of the phosphorescent emission substance in the light-emitting layer moves to the fluorescent emission substance, thereby obtaining light emission. Since the fluorescent emission substance allows the transition from the singlet excited state to the singlet ground state, the excitation lifetime (light emission lifetime) is shorter than that of the phosphorescent emission substance. Thus, when a fluorescent emission substance is also used in the light-emitting layer, a light-emitting device that is stable and has good reliability can be manufactured.

[0123] Examples of the fluorescent emission substance include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, naphthalene derivatives, etc. A fluorescent emission substance having a singlet excitation energy level and a triplet excitation energy level lower than the triplet excitation energy level of the phosphorescent emission substance can be used.

[0124] As specific examples, 5,6-bis[4-(10-phenyl-9-anthryl)phenyl]-2,2'-bipyridine (abbreviation: PAP2BPy), 5,6-bis[4'-(10-phenyl-9-anthryl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2BPy), N,N'-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn), N,N'-bis[4-(9H-carbazol-9-yl)phenyl]-N,N'-diphenyldistyrene-4,4'-diamine (abbreviation: YGA2S), 4-(9H-carbazol-9-yl)-4'-(10-phenyl-9-anthryl)triphenylamine (abbreviation: YGAPA), 4-(9H-carbazol-9-yl)-4'-(9,10-diphenyl-2-anthryl)triphenylamine (abbreviation: 2YGAPPA), N,9-diphenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: PCAPA), perylene, 2,5,8,11-tetra-tert-butylperylene (abbreviation: TBP), 4-(10-phenyl-9-anthryl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPA), N,N''-(2-tert-butylanthracene-9,10-diyl-di-4,1-phenylene)bis(N,N',N'-triphenyl-1,4-phenylenediamine) (abbreviation: DPABPA), N,N,N',N',N'',N'',N''',N''' - octaphenyldibenzo[g,p] -2,7,10,15-tetraamine (abbreviation: DBC1), coumarin 30, N,N'-diphenyl-N,N'-(1,6-pyrene-diyl)bis[(6-phenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-03), 3,10-bis[N-(9-phenyl-9H-carbazol-2-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10PCA2Nbf(IV)-02), 3,10-bis[N-(dibenzofuran-3-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10FrA2Nbf(IV)-02), etc.

[0125] In addition, 5,9-diphenyl-5,9-diaza-13b-boraperylene[3,2,1-de]anthracene (abbreviation: DABNA1), 9-[(1,1'-diphenyl)-3-yl]-N,N,5,11-tetraphenyl-5,9-dihydro-5,9-diaza-13b-boraperylene[3,2,1-de]anthracen-3-amine (abbreviation: DABNA2), 2,12-di(tert-butyl)-5,9-bis(4-tert-butylphenyl)-N,N-diphenyl-5H,9H-[1,4]benzazaborolo[2,3,4-kl]phenazaborole-7-amine (abbreviation: DPhA-tBu4DABNA), 2,12-di(tert-butyl)-N,N,5,9-tetrakis(4-tert-butylphenyl)-5H,9H-[1,4]benzazaborolo[2,3,4-kl]benzazaborolo-7-amine (abbreviation: tBuDPhA-tBu4DABNA), 2,12-di(tert-butyl)-5,9-bis(4-tert-butylphenyl)-7-methyl-5H,9H-[1,4]benzazaborolo[2,3,4-kl]phenazaborole (abbreviation: Me-tBu4DABNA), N7,N7,N13,N13,5,9,11,15-octaphenyl-5H,9H,11H,15H-[1,4]benzazaborolo[2,3,4-kl][1,4]benzazaborolo[4',3',2':4,5][1,4]benzazaborolo[3,2-b]phenazaborole-7,13-diamine (abbreviation: ν-DABNA), 2-(4-tert-butylphenyl)benzo[5,6]indolo[3,2,1-jk]benzo[b]carbazole (abbreviation: tBuPBibc) and other nitrogen- and boron-containing fused heteroaromatic compounds, especially compounds having a diaza-boraperylene-anthracene skeleton, can be suitably used because the emission spectrum thereof is narrow and blue light emission with good color purity can be obtained.

[0126] In addition to the above, 9,10,11-tris[3,6-bis(1,1-dimethylethyl)-9H-carbazol-9-yl]-2,5,15,18-tetrakis(1,1-dimethylethyl)indolo[3,2,1-de]indolo[3',2',1':8,1][1,4]benzazaborolo[2,3,4-kl]phenazaborole (abbreviation: BBCz-G), 9,11-bis[3,6-bis(1,1-dimethylethyl)-9H-carbazol-9-yl]-2,5,15,18-tetrakis(1,1-dimethylethyl)indolo[3,2,1-de]indolo[3',2',1':8,1][1,4]benzazaborolo[2,3,4-kl]phenazaborole (abbreviation: BBCz-Y), etc. can also be suitably used.

[0127] In addition, as the luminescent material included in the light-emitting layer, a thermally activated delayed fluorescence (TADF) material can be used. As the thermally activated delayed fluorescence material, a heterocyclic compound having an electron-rich heteroaromatic ring and an electron-deficient heteroaromatic ring can be used. As specific examples, 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazol-11-yl)-1,3,5-triazine (abbreviation: PIC-TRZ), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 2-[4-(10H-phenoxazin-10-yl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: PXZ-TRZ), 3-[4-(5-phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9-dimethyl-9H-acridin-10-yl)-9H-xanthen-9-one (abbreviation: ACRXTN), bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl]sulfone (abbreviation: DMAC-DPS), 10-phenyl-10H,10’H-spiro[acridine-9,9’-anthracene]-10’-one (abbreviation: ACRSA), etc. can be cited. Since the heterocyclic compound has an electron-rich heteroaromatic ring and an electron-deficient heteroaromatic ring, it has high electron transportability and hole transportability, and thus is preferred. In particular, in the skeleton having an electron-deficient heteroaromatic ring, a diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyridazine skeleton) or a triazine skeleton is stable and has good reliability, and thus is preferred. In addition, in the skeleton having an electron-rich heteroaromatic ring, an acridine skeleton, a phenoxazine skeleton, a thiophene skeleton, a furan skeleton, and a pyrrole skeleton are stable and have good reliability, and thus it is preferred to have one or more selected from these skeletons. As the pyrrole skeleton, an indole skeleton, a carbazole skeleton, and a 3-(9-phenyl-9H-carbazol-3-yl)-9H-carbazole skeleton are particularly preferably used. In addition, in a substance in which an electron-rich heteroaromatic ring and an electron-deficient heteroaromatic ring are directly bonded, the donor property of the electron-rich heteroaromatic ring and the acceptor property of the electron-deficient heteroaromatic ring are both strong, and the difference between the singlet excitation energy level and the triplet excitation energy level becomes small, and thus it is particularly preferred. In addition, the above compound having a diaza-boradiazaindacene skeleton has a function as a thermally activated delayed fluorescence material and can obtain blue light emission with good color purity, and thus is preferred.

[0128] In addition, a thermally activated delayed fluorescence material can also be used instead of the phosphorescent substance. In the thermally activated delayed fluorescence material, the difference between the triplet excited energy level and the singlet excited energy level is small, so it has the function of converting energy from the triplet excited state to the singlet excited state through reverse intersystem crossing. Therefore, the triplet excited state can be converted (up-converted) to the singlet excited state (reverse intersystem crossing) by a small amount of thermal energy, and the luminescence (fluorescence) from the singlet excited state can be efficiently presented. In addition, the conditions for efficiently obtaining thermally activated delayed fluorescence are as follows: the energy difference between the triplet excited energy level and the singlet excited energy level is greater than 0 eV and 0.2 eV or less, preferably greater than 0 eV and 0.1 eV or less.

[0129] As the guest material 119 (phosphorescent compound), iridium, rhodium, platinum-based organometallic complexes or metal complexes can be cited. Among them, platinum complexes are preferably used as the metal complexes. In addition, platinum complexes having a nitrogen-containing heterocyclic carbene can also be cited. In addition, an organoiridium complex such as an iridium ortho-metal complex can also be used. As the ortho-metalated ligand, a 4H-triazole ligand, a 1H-triazole ligand, an imidazole ligand, a pyridine ligand, a pyrimidine ligand, a pyrazine ligand or an isoquinoline ligand can be cited.

[0130] In addition, as the guest material 119 (phosphorescent compound), the organic compound 118_1, the organic compound 118_2 and the guest material 119 (phosphorescent compound) are preferably selected such that the LUMO energy level is higher than the LUMO energy level of the organic compound 118_1 and the highest occupied molecular orbital (HOMO) energy level is lower than the HOMO energy level of the organic compound 118_2. Thereby, a light-emitting device with high luminous efficiency and capable of being driven at a low voltage can be manufactured.

[0131] In addition, as the guest material 119 (phosphorescent compound), the organic compound 118_1, the organic compound 118_2 and the guest material 119 (phosphorescent compound) are preferably selected such that the LUMO energy level is higher than the LUMO energy level of the organic compound 118_1 and the HOMO energy level is higher than the HOMO energy level of the organic compound 118_2. Thereby, a light-emitting device with high luminous efficiency and capable of being driven at a low voltage can be manufactured.

[0132] In addition, the organic compound 118_1 and the guest material 119 (phosphorescent compound) are preferably selected such that the energy difference between the LUMO energy level of the organic compound 118_1 and the HOMO energy level of the guest material 119 (phosphorescent compound) is equal to or greater than the energy calculated from the absorption edge at the longest wavelength in the absorption spectrum of the guest material 119 (phosphorescent compound). Thereby, a light-emitting device with high luminous efficiency and capable of being driven at a low voltage can be manufactured.

[0133] In addition, the absorption edge at the longest wavelength in the absorption spectrum can be obtained from the Tauc curve assuming a direct transition by measuring the absorption spectrum of the thin film in a state or the object substance doped in the matrix material. Alternatively, the absorption edge can also be calculated by the following method: measuring the absorption spectrum of a solution of the object substance, drawing a tangent line at half of the long-wavelength side of the peak or shoulder peak observed at the longest wavelength in the absorption spectrum, and calculating from the intersection of this tangent line with the horizontal axis (wavelength) or the baseline. There is no particular limitation on the solvent of the solution, but solvents with relatively low polarity such as toluene and chloroform are preferably used.

[0134] Note that the values of the HOMO energy level and the LUMO energy level used in this specification can be calculated by electrochemical measurement. As typical examples of electrochemical measurement, cyclic voltammetry (CV) measurement, differential pulse voltammetry (DPV) measurement, etc. can be cited.

[0135] In cyclic voltammetry (CV) measurement, the values of the HOMO energy level and the LUMO energy level (E) can be calculated based on the oxidation peak potential (E pa ) and the reduction peak potential (E pc ) obtained by changing the potential of the working electrode relative to the reference electrode. In the measurement, the HOMO energy level is calculated from the potential scan in the positive direction, and the LUMO energy level is calculated from the potential scan in the negative direction. In addition, the scan rate in the measurement is 0.1 V / s.

[0136] Describe the specific calculation methods of the HOMO energy level and the LUMO energy level. Calculate the standard redox potential (E pa ) from the oxidation peak potential (E pc ) and the reduction peak potential (E o ) obtained from the cyclic voltammogram of the material (=(E pa +E pc ) / 2), and subtract this standard redox potential (E x ) from the potential energy (E o ) of the reference electrode relative to the vacuum energy level. Thus, the values of the HOMO energy level and the LUMO energy level (E) (=E x -E o ) can be calculated respectively.

[0137] Note that the above shows the case of obtaining a reversible redox wave. In the case of obtaining an irreversible redox wave, assume the value obtained by subtracting a certain value (0.1 eV) from the oxidation peak potential (E pa ) as the reduction peak potential (E pc ), calculate the standard redox potential (E o ) accurate to one decimal place, and thus calculate the HOMO energy level. In addition, for the reduction peak potential (Epc ) The value obtained by adding a fixed value (0.1 eV) is assumed to be the oxidation peak potential (E pa ), and the standard redox potential (E o ) with one decimal place is calculated, from which the LUMO energy level is calculated.

[0138] As a substance having an emission peak in the blue or green wavelength region, for example, tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazol-3-yl-κN2]phenyl-κC}iridium(III) (abbreviation: Ir(mpptz-dmp) 3 ), tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazolato)iridium(III) (abbreviation: Ir(Mptz) 3 ), tris[4-(3-biphenyl)-5-isopropyl-3-phenyl-4H-1,2,4-triazolato]iridium(III) (abbreviation: Ir(iPrptz-3b) 3 ), tris[3-(5-biphenyl)-5-isopropyl-4-phenyl-4H-1,2,4-triazolato]iridium(III) (abbreviation: Ir(iPr5btz) 3 ) and other organometallic iridium complexes having a 4H-triazole skeleton; tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato]iridium(III) (abbreviation: Ir(Mptz1-mp) 3 ), tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazolato)iridium(III) (abbreviation: Ir(Prptz1-Me) 3 ) and other organometallic iridium complexes having a 1H-triazole skeleton; fac-tris[1-(2,6-diisopropylphenyl)-2-phenyl-1H-imidazole]iridium(III) (abbreviation: Ir(iPrpim) 3 ), tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridinato]iridium(III) (abbreviation: Ir(dmpimpt-Me) 3 ) and other organometallic iridium complexes having an imidazole skeleton; and bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2 ']iridium(III) tetrakis(1-pyrazolyl)borate (abbreviation: FIr6), bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2Iridium(III) picolinate (abbreviation: FIrpic), bis{2-[3',5'-bis(trifluoromethyl)phenyl]pyridinato-N,C 2}iridium(III) picolinate (abbreviation: Ir(CF 3 ppy) 2 (pic)), bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2 ']iridium(III) acetylacetonate (abbreviation: FIr(acac)), etc., organometallic iridium complexes with phenylpyridine derivatives having an electron-withdrawing group as ligands. Among the above metal complexes, organometallic iridium complexes having a nitrogen-containing five-membered heterocyclic skeleton such as a 4H-triazole skeleton, a 1H-triazole skeleton, and an imidazole skeleton have a very high triplet excitation energy and have good reliability or luminous efficiency, so they are particularly preferred.

[0139] As substances having a luminescence peak in the green or yellow wavelength region, for example, tris(4-methyl-6-phenylpyrimidine)iridium(III) (abbreviation: Ir(mppm) 3 ), tris(4-tert-butyl-6-phenylpyrimidine)iridium(III) (abbreviation: Ir(tBuppm) 3 ), (acetylacetonato)bis(6-methyl-4-phenylpyrimidine)iridium(III) (abbreviation: Ir(mppm) 2 (acac)), (acetylacetonato)bis(6-tert-butyl-4-phenylpyrimidine)iridium(III) (abbreviation: Ir(tBuppm) 2 (acac)), (acetylacetonato)bis[4-(2-norbornanyl)-6-phenylpyrimidine]iridium(III) (abbreviation: Ir(nbppm) 2 (acac)), (acetylacetonato)bis[5-methyl-6-(2-methylphenyl)-4-phenylpyrimidine]iridium(III) (abbreviation: Ir(mpmppm) 2 (acac)), (acetylacetonato)bis{4,6-dimethyl-2-[6-(2,6-dimethylphenyl)-4-pyrimidinyl-κN3]phenyl-κC}iridium(III) (abbreviation: Ir(dmppm-dmp) 2 (acac)), (acetylacetonato)bis(4,6-diphenylpyrimidine)iridium(III) (abbreviation: Ir(dppm) 2 (acac)), etc., organometallic iridium complexes having a pyrimidine skeleton, (acetylacetonato)bis(3,5-dimethyl-2-phenylpyrazine)iridium(III) (abbreviation: Ir(mppr-Me) 2 (acac)), (acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyrazine)iridium(III) (abbreviation: Ir(mppr-iPr)2 (acac)), and organometallic iridium complexes having a pyrazine skeleton such as tris(2-phenylpyridine-N,C 2 ')iridium(III) (abbreviation: Ir(ppy) 3 ), bis(2-phenylpyridinato-N,C 2 ')iridium(III) acetylacetonate (abbreviation: Ir(ppy) 2 (acac)), bis(benzo[h]quinolinato)iridium(III) acetylacetonate (abbreviation: Ir(bzq) 2 (acac)), tris(benzo[h]quinolinato)iridium(III) (abbreviation: Ir(bzq) 3 ), tris(2-phenylquinolinato-N,C 2＇ )iridium(III) (abbreviation: Ir(pq) 3 ), bis(2-phenylquinolinato-N,C 2 ')iridium(III) acetylacetonate (abbreviation: Ir(pq) 2 (acac)), and organometallic iridium complexes having a pyridine skeleton such as bis(2,4-diphenyl-1,3-oxazolato-N,C 2 ')iridium(III) acetylacetonate (abbreviation: Ir(dpo) 2 (acac)), bis{2-[4'-(perfluorophenyl)phenyl]pyridinato-N,C 2 '}iridium(III) acetylacetonate (abbreviation: Ir(p-PF-ph) 2 (acac)), bis(2-phenylbenzothiazolato-N,C 2 ')iridium(III) acetylacetonate (abbreviation: Ir(bt) 2 (acac)), and organometallic iridium complexes such as tris(acetylacetonato)(monophenanthroline)terbium(III) (abbreviation: Tb(acac) 3 (Phen)), and rare earth metal complexes. Among the above metal complexes, organometallic iridium complexes having a pyrimidine skeleton are particularly preferred because of their good reliability or luminescence efficiency.

[0140] In addition, as substances having a luminescence peak in the yellow or red wavelength region, for example, (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyridinato]iridium(III) (abbreviation: Ir(5mdppm) 2 (dibm)), bis[4,6-bis(3-methylphenyl)pyridinato](dineopentanoylmethanato)iridium(III) (abbreviation: Ir(5mdppm) 2 (dpm)), bis[4,6-bis(naphthalen-1-yl)pyridinato](dineopentanoylmethanato)iridium(III) (abbreviation: Ir(d1npm)2 Organometallic iridium complexes having a pyrimidine skeleton, such as (acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridium(III) (abbreviation: Ir(tppr) 2 (acac)), bis(2,3,5-triphenylpyrazinato)(dineopentanoyl methane)iridium(III) (abbreviation: Ir(tppr) 2 (dpm)), (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxaline]iridium(III) (abbreviation: Ir(Fdpq) 2 (acac)), etc.; organometallic iridium complexes having a pyrazine skeleton; tris(1-phenylisoquinoline-N,C 2’ )iridium(III) (abbreviation: Ir(piq) 3 ), bis(1-phenylisoquinoline-N,C 2’ )iridium(III) acetylacetonate (abbreviation: Ir(piq) 2 (acac)), etc.; organometallic iridium complexes having a pyridine skeleton; platinum complexes such as 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum(II) (abbreviation: PtOEP); and rare earth metal complexes such as tris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline)europium(III) (abbreviation: Eu(DBM) 3 (Phen)), tris[1-(2-thienoyl)-3,3,3-trifluoroacetone](monophenanthroline)europium(III) (abbreviation: Eu(TTA) 3 (Phen)), etc. Among the above metal complexes, organometallic iridium complexes having a pyrimidine skeleton are particularly preferred because of their good reliability or luminescence efficiency. In addition, organometallic iridium complexes having a pyrazine skeleton can provide red luminescence with good chromaticity.

[0141] As the luminescent material included in the light-emitting layer 113, a material capable of converting triplet excitation energy into luminescence can be used. As the material capable of converting triplet excitation energy into luminescence, in addition to phosphorescent compounds, thermally activated delayed fluorescence (TADF) materials can be cited. Therefore, the description of phosphorescent compounds can be regarded as the description of thermally activated delayed fluorescence materials. Note that the thermally activated delayed fluorescence material refers to a material in which the energy difference between the triplet excitation level and the singlet excitation level is small and has the function of converting energy from the triplet excited state to the singlet excited state through reverse intersystem crossing. Therefore, the triplet excited state can be upconverted to the singlet excited state (reverse intersystem crossing) by a small amount of thermal energy, and luminescence (fluorescence) from the singlet excited state can be efficiently presented. In addition, the conditions for efficiently obtaining thermally activated delayed fluorescence are as follows: the energy difference between the triplet excitation level and the singlet excitation level is greater than 0 eV and 0.2 eV or less, preferably greater than 0 eV and 0.1 eV or less.

[0142] When the thermally activated delayed fluorescence material is composed of one material, for example, the following materials can be used.

[0143] First, derivatives such as fullerenes, acridine derivatives such as proflavine, eosin, etc. can be cited. In addition, metal-containing porphyrins containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), palladium (Pd), etc. can be cited. As the metal-containing porphyrin, for example, protoporphyrin-tin fluoride complex (SnF 2 (Proto IX)), mesoporphyrin-tin fluoride complex (SnF 2 (Meso IX)), hematoporphyrin-tin fluoride complex (SnF 2 (Hemato IX)), coproporphyrin tetramethyl ester-tin fluoride complex (SnF 2 (Copro III-4Me)), octaethylporphyrin-tin fluoride complex (SnF 2 (OEP)), etioporphyrin-tin fluoride complex (SnF 2 (Etio I)), octaethylporphyrin-platinum chloride complex (PtCl 2 (OEP)), etc. can be cited.

[0144] In addition, as a thermally activated delayed fluorescence material composed of one kind of material, a heterocyclic compound having an electron-rich heteroaromatic ring and an electron-deficient heteroaromatic ring can also be used. Specifically, 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazol-11-yl)-1,3,5-triazine (abbreviation: PIC-TRZ), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 2-[4-(10H-phenoxazin-10-yl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: PXZ-TRZ), 3-[4-(5-phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9-dimethyl-9H-acridin-10-yl)-9H-xanthen-9-one (abbreviation: ACRXTN), bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl]sulfone (abbreviation: DMAC-DPS), 10-phenyl-10H,10’H-spiro[acridine-9,9’-anthracene]-10’-one (abbreviation: ACRSA), etc. can be cited. Since the heterocyclic compound has an electron-rich heteroaromatic ring and an electron-deficient heteroaromatic ring, it has high electron transportability and hole transportability, and thus is preferred. In particular, in a skeleton having an electron-deficient heteroaromatic ring, a diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyridazine skeleton) or a triazine skeleton is stable and has good reliability, and thus is preferred. In addition, in a skeleton having an electron-rich heteroaromatic ring, an acridine skeleton, a phenoxazine skeleton, a thiophene skeleton, a furan skeleton, and a pyrrole skeleton are stable and have good reliability, and thus it is preferred to have one or more selected from these skeletons. As the pyrrole skeleton, an indole skeleton, a carbazole skeleton, and a 3-(9-phenyl-9H-carbazol-3-yl)-9H-carbazole skeleton are particularly preferably used. In addition, in a substance in which an electron-rich heteroaromatic ring and an electron-deficient heteroaromatic ring are directly bonded, both the donor property of the electron-rich heteroaromatic ring and the acceptor property of the electron-deficient heteroaromatic ring are strong, and the difference between the singlet excitation energy level and the triplet excitation energy level becomes small, and thus it is particularly preferred.

[0145] The light-emitting layer 113 may also be formed of two or more layers. For example, in the case where the first light-emitting layer and the second light-emitting layer are sequentially stacked from the hole-transporting layer side to form the light-emitting layer 113, a material having hole-transporting properties may be used as the host material of the first light-emitting layer, and a material having electron-transporting properties may be used as the host material of the second light-emitting layer. In addition, the light-emitting materials included in the first light-emitting layer and the second light-emitting layer may be the same or different materials. Further, the light-emitting materials included in the first light-emitting layer and the second light-emitting layer may be materials having the function of emitting light of the same color or materials having the function of emitting light of different colors. By using light-emitting materials having the function of emitting light of different colors from each other for the two-layer light-emitting layer, multiple emissions can be obtained simultaneously. In particular, it is preferable to select the light-emitting materials for each light-emitting layer so that white light emission can be obtained by combining the light emitted from the two light-emitting layers.

[0146] In addition, materials other than the host material 118 and the guest material 119 may also be included in the light-emitting layer 113.

[0147] In addition, the light-emitting layer 113 may be formed by a method such as evaporation (including vacuum evaporation), inkjet, coating, gravure printing, etc. In addition, in addition to the above materials, inorganic compounds such as quantum dots or polymer compounds (oligomers, dendrimers, polymers, etc.) may also be included.

[0148] <<Hole injection layer>> The hole injection layer (111, 111a, 111b) is a layer for injecting holes from the first electrode 101 of the anode and the charge generation layer (106, 106a, 106b) into the organic compound layer (103, 103a, 103b), and is a layer containing an organic acceptor material and a material having high hole injection properties.

[0149] The hole injection layer (111, 111a, 111b) has the function of reducing the injection barrier of holes from one of the pair of electrodes (the first electrode 101 or the second electrode 102) and promoting hole injection, and is formed, for example, using a transition metal oxide, a phthalocyanine derivative, or an aromatic amine. Examples of the transition metal oxide include molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, manganese oxide, etc. Examples of the phthalocyanine derivative include phthalocyanine or metal phthalocyanine. Examples of the aromatic amine include benzidine derivatives or phenylenediamine derivatives. In addition, polymer compounds such as polythiophene or polyaniline may also be used, typically: poly(ethylenedioxythiophene) / polystyrenesulfonic acid as a self-doped polythiophene.

[0150] As the hole injection layer (111, 111a, 111b), a layer containing a composite material composed of a hole transporting material and a material exhibiting electron accepting properties with respect to the material can be used. Alternatively, a laminate of a layer containing a material exhibiting electron accepting properties and a layer containing a hole transporting material can also be used. In a steady state or in a state where an electric field is present, charge transfer can occur between these materials. Examples of the material exhibiting electron accepting properties include organic acceptors such as quinodimethane derivatives, tetrachlorobenzoquinone derivatives, or hexaazatriphenylene derivatives. Specifically, 7,7,8,8 - tetracyano - 2,3,5,6 - tetrafluoroquinodimethane (abbreviation: F 4 -TCNQ), chloroquinone, 2,3,6,7,10,11 - hexacyano - 1,4,5,8,9,12 - hexaazatriphenylene (abbreviation: HAT - CN), and other compounds having an electron - withdrawing group (halogen group or cyano group). In addition, transition metal oxides, such as oxides of Group 4 to Group 8 metals, can also be used. Specifically, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, rhenium oxide, etc. can be used. Molybdenum oxide is particularly preferably used because it is stable in the atmosphere, has low hygroscopicity, and is easy to handle.

[0151] As the hole transporting material, a material having a higher hole transport property than an electron transport property can be used, and a material having a hole mobility of 1×10 -6 cm 2 / Vs or more is preferably used. Specifically, aromatic amines, carbazole derivatives, aromatic hydrocarbons, stilbene derivatives, etc., which are listed as hole transporting materials that can be used for the light - emitting layer 113, can be used. The above - mentioned hole transporting material can also be a polymer compound.

[0152] <<Hole Transport Layer>> The hole transport layer (112, 112a, 112b) is a layer containing a hole transporting material, and the hole transporting materials exemplified as the materials for the hole injection layer (111, 111a, 111b) can be used. The hole transport layer (112, 112a, 112b) has a function of transporting the holes injected into the hole injection layer (111, 111a, 111b) to the light - emitting layer (113, 113a, 113b), so it preferably has a HOMO level that is the same as or close to the HOMO level of the hole injection layer (111, 111a, 111b).

[0153] In addition, the above - mentioned hole transporting material is preferably one having a hole mobility of 1×10 -6 cm 2A substance with a hole mobility of 1×10

[0154] <<Electron transport layer>> The electron transport layer (114, 114a, 114b) has the function of transporting electrons injected from the other of the pair of electrodes (the first electrode 101 or the second electrode 102) through the electron injection layer (115, 115a, 115b) to the light-emitting layer 113. As the electron transport material, a material with a higher electron transport property than hole transport property can be used, and a material with an electron mobility of 1×10 -6 cm 2 / Vs or more is preferably used. As a compound that easily accepts electrons (a material with electron transport property), a compound having a π-deficient heteroaromatic ring skeleton such as a nitrogen-containing heteroaromatic compound or a metal complex can be used. Specifically, metal complexes including quinoline ligands, benzoquinoline ligands, oxazole ligands or thiazole ligands, which are cited as electron transport materials that can be used in the light-emitting layer 113, can be mentioned. In addition, oxadiazole derivatives, triazole derivatives, benzimidazole derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, phenanthroline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, triazine derivatives, etc. can also be mentioned. In addition, the above electron transport material is preferably a substance with an electron mobility of 1×10 -6 cm 2 / Vs or more. As long as the electron transport property is higher than the hole transport property, substances other than the above substances can be used. In addition, the electron transport layer (114, 114a, 114b) is not limited to a single layer, and two or more layers composed of the above substances can also be stacked.

[0155] In addition, a layer for controlling the movement of electron carriers can be provided between the electron transport layer (114, 114a, 114b) and the light-emitting layer (113, 113a, 113b). This layer is a layer in which a small amount of a substance with a high electron capture property is added to the above material with a high electron transport property. By suppressing the movement of electron carriers, the carrier balance can be adjusted. This structure has a great effect on suppressing problems caused by electrons passing through the light-emitting layer (such as a decrease in the element life).

[0156] <<Electron injection layer>> The electron injection layer (115, 115a, 115b) has the function of reducing the injection barrier of electrons from the second electrode 102 to promote electron injection. For example, Group 1 metals, Group 2 metals, or their oxides, halides, carbonates, etc. can be used. In addition, a composite material composed of the above-mentioned electron transporting material and a material that exhibits electron-donating properties to this material can also be used. As the material having electron-donating properties, Group 1 metals, Group 2 metals, or their oxides, etc. can be cited. Specifically, lithium fluoride (LiF), sodium fluoride (NaF), cesium fluoride (CsF), calcium fluoride (CaF 2 ) and lithium oxide (Li 2 O) and other alkali metals, alkaline earth metals or compounds of these metals can be used. In addition, rare earth metal compounds such as erbium fluoride (ErF 3 ) can be used. In addition, an electron salt can also be used for the electron injection layer 115. As this electron salt, for example, a substance that adds electrons to a mixed oxide of calcium and aluminum at a high concentration can be cited. In addition, a substance that can be used for the electron transport layer (114, 114a, 114b) can also be used for the electron injection layer (115, 115a, 115b).

[0157] In addition, a composite material formed by mixing an organic compound and an electron donor can also be used for the electron injection layer (115, 115a, 115b). This composite material has good electron injection properties and electron transport properties because electrons are generated in the organic compound by the electron donor. In this case, the organic compound is preferably a material with good performance in transporting the generated electrons. Specifically, for example, the substances constituting the electron transport layer 114 (metal complexes or heteroaromatic compounds, etc.) described above can be used. As the electron donor, any substance that exhibits electron-donating properties to the organic compound can be used. Specifically, alkali metals, alkaline earth metals, or rare earth metals are preferably used, and lithium, sodium, cesium, magnesium, calcium, erbium, ytterbium, etc. can be cited. In addition, alkali metal oxides or alkaline earth metal oxides are preferably used, and lithium oxide, calcium oxide, barium oxide, etc. can be cited. In addition, Lewis bases such as magnesium oxide can also be used. In addition, organic compounds such as tetrathiafulvalene (abbreviation: TTF) can also be used.

[0158] In addition, the above-mentioned light-emitting layer, hole injection layer, hole transport layer, electron transport layer, and electron injection layer can all be formed by methods such as evaporation (including vacuum evaporation), inkjet printing, coating, gravure printing, etc. In addition, as the above-mentioned light-emitting layer, hole injection layer, hole transport layer, electron transport layer, and electron injection layer, in addition to the above materials, inorganic compounds such as quantum dots or polymer compounds (oligomers, dendrimers, polymers, etc.) can also be used.

[0159] As quantum dots, colloidal quantum dots, alloy-type quantum dots, core-shell type quantum dots, core-type quantum dots, etc. can be used. In addition, quantum dots containing an element group of Group 2 and Group 16, Group 13 and Group 15, Group 13 and Group 17, Group 11 and Group 17, or Group 14 and Group 15 can also be used. Alternatively, quantum dots containing elements such as cadmium (Cd), selenium (Se), zinc (Zn), sulfur (S), phosphorus (P), indium (In), tellurium (Te), lead (Pb), gallium (Ga), arsenic (As), aluminum (Al), etc. can be used.

[0160] <> The first electrode 101 and the second electrode 102 are used as the anode or cathode of the light-emitting device. The first electrode 101 and the second electrode 102 can be formed using metals, alloys, conductive compounds, and their mixtures or laminates, etc.

[0161] One of the first electrode 101 and the second electrode 102 is preferably formed using a conductive material having a function of reflecting light. Examples of such a conductive material include aluminum (Al) or an alloy containing Al. Examples of the alloy containing Al include an alloy containing Al and L (L represents one or more of titanium (Ti), neodymium (Nd), nickel (Ni), and lanthanum (La)), such as an alloy containing Al and Ti or an alloy containing Al, Ni, and La. Aluminum has a low resistivity and a high light reflectivity. In addition, since aluminum is abundantly contained in the earth's crust and is not expensive, using aluminum can reduce the manufacturing cost of the light-emitting device. In addition, silver (Ag), an alloy containing Ag and N (N represents one or more of yttrium (Y), Nd, magnesium (Mg), ytterbium (Yb), Al, Ti, gallium (Ga), zinc (Zn), indium (In), tungsten (W), manganese (Mn), tin (Sn), iron (Fe), Ni, copper (Cu), palladium (Pd), iridium (Ir), and gold (Au)), etc. can also be used. Examples of the alloy containing silver include alloys such as an alloy containing silver, palladium, and copper; an alloy containing silver and copper; an alloy containing silver and magnesium; an alloy containing silver and nickel; an alloy containing silver and gold; and an alloy containing silver and ytterbium. In addition to the above materials, transition metals such as tungsten, chromium (Cr), molybdenum (Mo), copper, and titanium can be used.

[0162] In addition, the light obtained from the light-emitting layer is extracted through one or both of the first electrode 101 and the second electrode 102. Thus, at least one of the first electrode 101 and the second electrode 102 is preferably formed using a conductive material having a function of transmitting light. Examples of such a conductive material include a conductive material having a visible light transmittance of 40% or more and 100% or less, preferably 60% or more and 100% or less, and a resistivity of 1×10 -2 Ω·cm or less.

[0163] In addition, one or both of the first electrode 101 and the second electrode 102 are preferably formed of a conductive material having a function of transmitting light and a function of reflecting light. As the conductive material having a function of transmitting light, a conductive material having a visible light transmittance of 40% or more and 100% or less, preferably 60% or more and 100% or less, and a resistivity of 1×10 -2 Ω·cm or less can be cited. For example, one or more of a conductive metal, alloy, and conductive compound can be used. Specifically, for example, indium tin oxide (Indium Tin Oxide, hereinafter referred to as ITO), indium tin oxide containing silicon or silicon oxide (abbreviation: ITSO), indium zinc oxide, indium tin oxide containing titanium, indium titanium oxide, indium oxide containing tungsten oxide and zinc oxide, and other metal oxides can be used. In addition, a metal thin film having a thickness that allows light to pass through (preferably a thickness of 1 nm or more and 30 nm or less) can be used. As the metal, for example, alloys such as Ag, Ag and Al, Ag and Mg, Ag and Au, and Ag and Yb can be used.

[0164] Note that in this specification and the like, as a material having a function of transmitting light, a material having a function of transmitting visible light and having conductivity can be used. For example, there are oxide conductors, oxide semiconductors represented by the above ITO (Indium Tin Oxide), or organic conductors containing organic substances. As the organic conductor containing organic substances, for example, a composite material obtained by mixing an organic compound and an electron donor (donor), a composite material obtained by mixing an organic compound and an electron acceptor (acceptor), and the like can be cited. In addition, inorganic carbon materials such as graphene can also be used. In addition, the resistivity of this material is preferably 1×10 5 Ω·cm or less, more preferably 1×10 4 Ω·cm or less.

[0165] In addition, one or both of the first electrode 101 and the second electrode 102 can be formed by laminating a plurality of the above materials.

[0166] In order to improve the light extraction efficiency, a material having a refractive index higher than that of the electrode and having a function of transmitting light may be formed in contact with the electrode having the function of transmitting light. As such a material, as long as it has the function of transmitting visible light, it may be a conductive material or a non-conductive material. For example, in addition to the above-mentioned oxide conductors, oxide semiconductors and organic substances may also be mentioned. As the organic substance, for example, materials exemplified as a light-emitting layer, a hole injection layer, a hole transport layer, an electron transport layer or an electron injection layer may be mentioned. In addition, a metal thin film having a thickness that allows light to pass through may be used, or a plurality of layers having a thickness of 2 nm to 20 nm may be laminated.

[0167] When the first electrode 101 or the second electrode 102 is used as a cathode, a material having a small work function (3.8 eV or less) is preferably used. For example, elements belonging to Group 1 or Group 2 of the periodic table (e.g., alkali metals such as lithium, sodium, and cesium, alkaline earth metals such as calcium or strontium, magnesium, etc.), alloys containing the above elements (e.g., Ag and Mg or Al and Li), rare earth metals such as europium (Eu) or ytterbium (Yb), alloys containing the above rare earth metals, alloys containing aluminum and silver, etc. may be used.

[0168] When the first electrode 101 or the second electrode 102 is used as an anode, a material having a large work function (4.0 eV or more) is preferably used.

[0169] The first electrode 101 and the second electrode 102 may also be a laminate of a conductive material having a function of reflecting light and a conductive material having a function of transmitting light. In this case, the first electrode 101 and the second electrode 102 have a function of adjusting the optical distance so that light of a desired wavelength from each light-emitting layer resonates to enhance the light of that wavelength, so it is preferable.

[0170] As a deposition method for the first electrode 101 and the second electrode 102, a sputtering method, an evaporation method, a printing method, a coating method, an MBE (Molecular Beam Epitaxy) method, a CVD method, a pulsed laser deposition method, an ALD (Atomic Layer Deposition) method, etc. may be appropriately used.

[0171] <<Charge Generation Layer>> The charge generation layer 106 has the following functions: when a voltage is applied between the first electrode 101 (anode) and the second electrode 102 (cathode), it injects electrons into one organic compound layer (103a or 103b) and injects holes into the other organic compound layer (103b or 103a). The charge generation layer 106 can have a structure in which an electron acceptor (acceptor) is added to a hole-transporting material (also referred to as a P-type layer), and can also have a structure in which an electron donor (donor) is added to an electron-transporting material (also referred to as an electron injection buffer layer). Alternatively, these two structures can be laminated. Furthermore, an electron relay layer can be provided between the P-type layer and the electron injection buffer layer. Note that by forming the charge generation layer 106 including the P-type layer and the electron injection buffer layer, an increase in the driving voltage caused by laminating the organic compound layers can be suppressed.

[0172] When the charge generation layer 106 has a structure (P-type layer) in which an electron acceptor is added to a hole-transporting material of an organic compound, the materials shown in this embodiment can be used as the hole-transporting material. In addition, as the electron acceptor, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F 4 -TCNQ), chloroquinone, etc. can be cited. In addition, oxides of metals belonging to Groups 4 to 8 in the periodic table can be cited. Specifically, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, rhenium oxide, etc. can be cited. In addition, the above acceptor materials can also be used. In addition, a mixed film obtained by mixing the materials constituting the P-type layer can be used, or single films containing each material can be laminated.

[0173] When the charge generation layer 106 has a structure (electron injection buffer layer) in which an electron donor is added to an electron-transporting material, the materials shown in this embodiment can be used as the electron-transporting material. In addition, as the electron donor, an alkali metal, an alkaline earth metal, a rare earth metal, or a metal belonging to Groups 2 and 13 in the periodic table and their oxides or carbonates can be used. Specifically, lithium (Li), cesium (Cs), magnesium (Mg), calcium (Ca), ytterbium (Yb), indium (In), lithium oxide (Li 2 O), cesium carbonate, etc. are preferably used. In addition, an organic compound such as tetrathianaphthacene can also be used as the electron donor.

[0174] In the charge generation layer 106, when an electron relay layer is provided between the P-type layer and the electron injection buffer layer, the electron relay layer contains at least a substance having electron transport properties and has a function of preventing the interaction between the electron injection buffer layer and the P-type layer and smoothly transferring electrons. The LUMO energy level of the substance having electron transport properties contained in the electron relay layer is preferably located between the LUMO energy level of the acceptor substance in the P-type layer and the LUMO energy level of the substance having electron transport properties contained in the electron transport layer in contact with the charge generation layer 106. The specific value of the LUMO energy level of the substance having electron transport properties in the electron relay layer is preferably -5.0 eV or more, more preferably -5.0 eV or more and -3.0 eV or less. In addition, as the substance having electron transport properties in the electron relay layer, a phthalocyanine material or a metal complex having a metal-oxygen bond and an aromatic ligand is preferably used.

[0175] Although Figure 2D a structure in which two organic compound layers 103 are stacked is shown, a stacked structure of three or more organic compound layers can also be employed by providing a charge generation layer between different organic compound layers.

[0176] <<Cover layer>> Note that although not shown in Figures 2A to 2E , a cover layer can also be provided on the second electrode 102 of the light-emitting device. For example, a material having a high refractive index can be used for the cover layer. By providing a cover layer on the second electrode 102, the extraction efficiency of light emitted from the second electrode 102 can be improved.

[0177] Specific examples of materials that can be used for the cover layer include 5,5'-diphenyl-2,2'-di-5H-[1]benzothieno[3,2-c]carbazole (abbreviation: BisBTc), 4,4',4''-(benzene-1,3,5-triyl)tris(dibenzothiophene) (abbreviation: DBT3P-II), etc.

[0178] <<Substrate>> In addition, the light-emitting device according to one embodiment of the present invention can be manufactured on a substrate made of glass, plastic, or the like. As the stacking order on the substrate, it can be stacked sequentially from the first electrode 101 side or sequentially from the second electrode 102 side.

[0179] In addition, as a substrate for a light-emitting device that can form one embodiment of the present invention, for example, glass, quartz, plastic, or the like can be used. Alternatively, a flexible substrate can also be used. A flexible substrate is a substrate that can be bent, such as a plastic substrate made of polycarbonate or polyarylate. In addition, a thin film, an inorganic thin film formed by vapor deposition, or the like can be used. Note that as long as it functions as a support during the manufacturing process of the light-emitting device and the optical element, other materials can be used. Alternatively, as long as it has the function of protecting the light-emitting device and the optical element.

[0180] For example, in this specification and the like, various substrates can be used to form a light-emitting device. There is no particular limitation on the type of substrate. As an example of the substrate, for example, a semiconductor substrate (e.g., a single crystal substrate or a silicon substrate), an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a metal substrate, a stainless steel substrate, a substrate having a stainless steel foil, a tungsten substrate, a substrate having a tungsten foil, a flexible substrate, a bonded film, cellulose nanofibers (CNF) containing fibrous materials, paper, or a base film, or the like can be used. As an example of the glass substrate, there are barium borosilicate glass, aluminosilicate glass, soda-lime glass, or the like. As examples of the flexible substrate, the bonded film, the base film, or the like, the following can be cited. For example, plastics represented by polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), and polytetrafluoroethylene (PTFE) can be cited. Alternatively, as an example, an acrylic resin or the like can be cited. Alternatively, as an example, polypropylene, polyester, polyvinyl fluoride, or polyvinyl chloride, or the like can be cited. Alternatively, as an example, resins such as polyamide resin, polyimide resin, aromatic polyamide resin, or epoxy resin, an inorganic vapor deposition thin film, paper, or the like can be cited.

[0181] In addition, a flexible substrate can also be used as the substrate, and a light-emitting device can be directly formed on the flexible substrate. Alternatively, a release layer can be provided between the substrate and the light-emitting device. The release layer can be used when a part or all of the light-emitting device is manufactured on the release layer and then separated from the substrate and transferred to another substrate. At this time, the light-emitting device can also be transferred to a substrate with low heat resistance or a flexible substrate. In addition, as the above release layer, for example, a laminated structure of an inorganic film of a tungsten film and a silicon oxide film, a structure in which a resin film such as polyimide is formed on the substrate, or the like can be used.

[0182] That is to say, a substrate can also be used to form a light-emitting device, and then the light-emitting device can be transferred onto another substrate. As examples of the substrate onto which the light-emitting device is transferred, in addition to the above-mentioned substrates, there can be cited cellophane substrates, stone substrates, wood substrates, cloth substrates (including natural fibers (silk, cotton, linen), synthetic fibers (nylon, polyurethane, polyester) or regenerated fibers (acetate fiber, cuprammonium fiber, rayon, recycled polyester), etc.), leather substrates, rubber substrates, and the like. By adopting these substrates, light-emitting devices that are not easily damaged, light-emitting devices with high heat resistance, light-emitting devices that achieve weight reduction, or light-emitting devices that achieve thinning can be manufactured.

[0183] In addition, a field effect transistor (FET) can also be formed on the above-mentioned substrate, for example, and a light-emitting device can be manufactured on an electrode electrically connected to the FET. Thus, an active matrix display device that controls the driving of the light-emitting device through the FET can be manufactured.

[0184] In this embodiment, one aspect of the present invention will be described. In addition, in other embodiments, one aspect of the present invention will be described. However, one aspect of the present invention is not limited thereto. That is, various aspects of the invention are described in this embodiment and other embodiments, whereby one aspect of the present invention is not limited to a specific aspect. For example, although an example of applying one aspect of the present invention to a light-emitting device is shown, one aspect of the present invention is not limited thereto. For example, depending on the situation or circumstances, one aspect of the present invention may not be applied to a light-emitting device. In addition, although an example is shown in one aspect of the present invention, the example includes a first organic compound, a second organic compound, and a guest material having a function of converting triplet excitation energy into light emission, the LUMO energy level of the first organic compound is lower than the LUMO energy level of the second organic compound, and the HOMO energy level of the first organic compound is lower than the HOMO energy level of the second organic compound, one aspect of the present invention is not limited thereto. In one aspect of the present invention, depending on the situation or circumstances, for example, the LUMO energy level of the first organic compound may not be lower than the LUMO energy level of the second organic compound. In addition, the HOMO energy level of the first organic compound may not be lower than the HOMO energy level of the second organic compound. In addition, for example, an example in which the first organic compound forms an exciplex with the second compound is shown in one aspect of the present invention, but one aspect of the present invention is not limited thereto. In one aspect of the present invention, depending on the situation or circumstances, for example, the first organic compound and the second organic compound may not form an exciplex. In addition, although an example is shown in one aspect of the present invention, in the example, the LUMO energy level of the guest material is higher than the LUMO energy level of the first organic compound, and the HOMO energy level of the guest material is lower than the HOMO energy level of the second organic compound, one aspect of the present invention is not limited thereto. In one aspect of the present invention, depending on the situation or circumstances, for example, the LUMO energy level of the guest material may not be higher than the LUMO energy level of the first organic compound. In addition, the HOMO energy level of the guest material may not be lower than the HOMO energy level of the second organic compound.

[0185] The structure shown in this embodiment can be used in appropriate combination with the structures shown in other embodiments.

[0186] Embodiment 3 In this embodiment, a light-emitting device 1000 according to one aspect of the present invention will be described in detail. Note that in this specification and the like, the light-emitting device is sometimes referred to as a display device.

[0187] As Figure 3A shown, the light-emitting device 1000 includes a pixel portion 177 in which a plurality of pixels 178 are arranged in a matrix. The pixel 178 includes a sub-pixel 110R, a sub-pixel 110G, and a sub-pixel 110B.

[0188] In this specification and the like, sometimes, for example, the term "sub-pixel 110" is used to describe the common content among sub-pixel 110R, sub-pixel 110G, and sub-pixel 110B. Additionally, regarding other constituent elements differentiated by letters, sometimes the reference numerals omitting the letters are used to describe the common content among such constituent elements.

[0189] Sub-pixel 110R emits red light, sub-pixel 110G emits green light, and sub-pixel 110B emits blue light. Thus, an image can be displayed on pixel section 177. Note that in this embodiment, sub-pixels of three colors, red (R), green (G), and blue (B), are taken as an example for description, and sub-pixels of other colors can also be combined. Additionally, the number of sub-pixels is not limited to three and can also be four or more. As four sub-pixels, for example, sub-pixels of four colors, R, G, B, and white (W); sub-pixels of four colors, R, G, B, and yellow (Y); and sub-pixels of four colors, R, G, B, and infrared light (IR), etc., can be cited.

[0190] In this specification and the like, sometimes the row direction is denoted as the X direction and the column direction is denoted as the Y direction. The X direction intersects with the Y direction, for example, perpendicularly.

[0191] In Figure 3A In the example shown, sub-pixels of different colors are arranged and configured in the X direction, and sub-pixels of the same color are arranged and configured in the Y direction. Note that sub-pixels of different colors can also be arranged and configured in the Y direction, and sub-pixels of the same color can be arranged and configured in the X direction.

[0192] A connection portion 140 is provided outside pixel section 177, and an area 141 can also be provided. Area 141 is provided between pixel section 177 and connection portion 140. An organic compound layer 103 is provided in area 141. Additionally, a conductive layer 151C is provided in connection portion 140.

[0193] In Figure 3A In the example shown, area 141 and connection portion 140 are located on the right side of pixel section 177, but there is no particular limitation on the positions of area 141 and connection portion 140. In addition, area 141 and connection portion 140 can also be one or more.

[0194] Figure 3B Is an example of a cross-sectional view along the dash-dot line A1 - A2 in Figure 3A . As Figure 3BAs shown, the light-emitting device 1000 includes an insulating layer 171, a conductive layer 172 on the insulating layer 171, an insulating layer 173 on the insulating layer 171 and the conductive layer 172, an insulating layer 174 on the insulating layer 173, and an insulating layer 175 on the insulating layer 174. The insulating layer 171 is disposed on a substrate (not shown). The insulating layers 175, 174, and 173 are provided with openings reaching the conductive layer 172, and plugs 176 are disposed in such a manner as to be embedded in the openings.

[0195] In the pixel portion 177, a light-emitting device 130 is disposed on the insulating layer 175 and the plugs 176. A protective layer 131 is disposed so as to cover the light-emitting device 130. The substrate 120 is bonded to the protective layer 131 by a resin layer 122. Additionally, it is preferable to provide an inorganic insulating layer 125 and an insulating layer 127 on the inorganic insulating layer 125 between adjacent light-emitting devices 130.

[0196] Figure 3B Cross-sections of a plurality of inorganic insulating layers 125 and a plurality of insulating layers 127 are shown, but when looking down on the light-emitting device 1000, the inorganic insulating layer 125 and the insulating layer 127 are preferably formed as continuous single layers, respectively. That is, the inorganic insulating layer 125 and the insulating layer 127 are preferably insulating layers having openings in the first electrode.

[0197] Figure 3B The light-emitting devices 130R, 130G, and 130B are shown as the light-emitting device 130. The light-emitting devices 130R, 130G, and 130B emit light of mutually different colors. For example, the light-emitting device 130R can emit red light, the light-emitting device 130G can emit green light, and the light-emitting device 130B can emit blue light. Additionally, the light-emitting device 130R, 130G, or 130B can also emit other visible light or infrared light.

[0198] A display device according to one aspect of the present invention can have, for example, a top emission structure that emits light in a direction opposite to the substrate on which the light-emitting device is formed. Additionally, a display device according to one aspect of the present invention can also have a bottom emission structure.

[0199] Examples of the light-emitting substance contained in the light-emitting device 130 include organic compounds such as substances that emit fluorescence (fluorescent materials), substances that emit phosphorescence (phosphorescent materials), and substances that exhibit thermally activated delayed fluorescence (thermally activated delayed fluorescence (TADF) materials), or an organometallic complex according to one aspect of the present invention. Additionally, inorganic compounds such as quantum dots can also be used.

[0200] The light-emitting device 130R has the structure as shown in Embodiment 1 and Embodiment 2. The light-emitting device 130R includes a first electrode (pixel electrode) composed of a conductive layer 151R and a conductive layer 152R, an organic compound layer 103R on the first electrode, a common layer 104 on the organic compound layer 103R, and a second electrode (common electrode) 155 on the common layer 104. The common layer 104 may or may not be provided. However, when the common layer 104 is provided, damage to the organic compound layer 103R during processing can be reduced, so it is preferred. When the common layer 104 is provided, the common layer 104 is preferably an electron injection layer. In addition, when the common layer 104 is not provided, the organic compound layer 103R is equivalent to the organic compound layer 103 in Embodiment 1 and Embodiment 2. When the common layer 104 is provided, the stacked structure of the organic compound layer 103R and the common layer 104 is equivalent to the organic compound layer 103 in Embodiment 1 and Embodiment 2.

[0201] The light-emitting device 130G has the structure as shown in Embodiment 1 and Embodiment 2. The light-emitting device 130G includes a first electrode (pixel electrode) composed of a conductive layer 151G and a conductive layer 152G, an organic compound layer 103G on the first electrode, a common layer 104 on the organic compound layer 103G, and a second electrode (common electrode) 102 on the common layer 104. The common layer 104 may or may not be provided. However, when the common layer 104 is provided, damage to the organic compound layer 103G during processing can be reduced, so it is preferred. In addition, when the common layer 104 is not provided, the organic compound layer 103G is equivalent to the organic compound layer 103 in Embodiment 1 and Embodiment 2. When the common layer 104 is provided, the stacked structure of the organic compound layer 103G and the common layer 104 is equivalent to the organic compound layer 103 in Embodiment 1 and Embodiment 2.

[0202] The light-emitting device 130B has the structure as shown in Embodiment 1 and Embodiment 2. The light-emitting device 130B includes a first electrode (pixel electrode) composed of a conductive layer 151B and a conductive layer 152B, an organic compound layer 103B on the first electrode, a common layer 104 on the organic compound layer 103B, and a second electrode (common electrode) 102 on the common layer 104. The common layer 104 may or may not be provided. However, when the common layer 104 is provided, damage to the organic compound layer 103B during processing can be reduced, so it is preferred. In addition, when the common layer 104 is not provided, the organic compound layer 103B is equivalent to the organic compound layer 103 in Embodiment 1 and Embodiment 2. When the common layer 104 is provided, the stacked structure of the organic compound layer 103B and the common layer 104 is equivalent to the organic compound layer 103 in Embodiment 1 and Embodiment 2.

[0203] One of the pixel electrode and the common electrode included in the light-emitting device is used as the anode, and the other is used as the cathode. Hereinafter, unless otherwise specified, the description will be made on the premise that the pixel electrode is used as the anode and the common electrode is used as the cathode.

[0204] The organic compound layers 103R, 103G, and 103B are independently formed in an island shape for each light-emitting device or for each light-emitting color. By forming the organic compound layer 103 in an island shape for each light-emitting device 130, leakage current between adjacent light-emitting devices 130 can also be suppressed in the high-definition light-emitting device. Thereby, crosstalk can be suppressed, and a light-emitting device with extremely high contrast can be realized. In particular, a light-emitting device with high current efficiency at low brightness can be realized.

[0205] The island-shaped organic compound layer 103 is formed by depositing an EL film and processing the EL film using a lithography technique.

[0206] In addition, in the light-emitting device according to one embodiment of the present invention, the first electrode (pixel electrode) of the light-emitting device preferably has a stacked structure. For example, in Figure 3B In the example shown, the first electrode of the light-emitting device 130 has a stacked structure of a conductive layer 151 and a conductive layer 152. For example, when the light-emitting device 1000 has a top-emission structure and the pixel electrode of the light-emitting device 130 is used as the anode, preferably, the conductive layer 151 is a layer with a high visible light reflectance, and the conductive layer 152 is, for example, a layer with visible light transmissivity and a large work function. When the light-emitting device 1000 has a top-emission structure, the higher the visible light reflectance of the pixel electrode, the higher the light extraction efficiency of the light emitted from the organic compound layer 103. In addition, when the pixel electrode is used as the anode, the larger the work function of the pixel electrode, the easier it is to inject holes into the organic compound layer 103. Thus, by the pixel electrode of the light-emitting device 130 having a stacked structure of a conductive layer 151 with a high visible light reflectance and a conductive layer 152 with a large work function, the light-emitting device 130 can be a light-emitting element with high light extraction efficiency and low driving voltage.

[0207] When the conductive layer 151 is a layer with a high visible light reflectance, the visible light reflectance of the conductive layer 151 is preferably, for example, 40% or more and 100% or less, more preferably 70% or more and 100% or less. In addition, when the conductive layer 152 is an electrode with visible light transmissivity, the visible light transmissivity is preferably, for example, 40% or more.

[0208] Here, when the pixel electrode has a stacked structure of multiple layers, the pixel electrode deteriorates due to, for example, the reaction between these multiple layers. For example, when the film formed after forming the pixel electrode is removed by a wet etching method, galvanic corrosion occurs due to the chemical solution contacting the pixel electrode.

[0209] In view of this, in the light-emitting device 1000 of the present embodiment, as shown in Figure 3B , it is preferable to form an insulating layer 156 on the side surfaces of the conductive layer 151 and the conductive layer 152. Thereby, for example, even when removing the film formed after forming the pixel electrode including the conductive layer 151 and the conductive layer 152 by using a wet etching method, it is possible to suppress the chemical solution from contacting the conductive layer 151. Therefore, for example, it is possible to suppress the occurrence of galvanic corrosion in the pixel electrode. Therefore, the light-emitting device 1000 can be manufactured by a method with a high yield, so that an inexpensive light-emitting device can be realized. In addition, it is possible to suppress the occurrence of defects in the light-emitting device 1000, and thus the light-emitting device 1000 can be a highly reliable light-emitting device.

[0210] As the conductive layer 151, for example, a metal material can be used. Specifically, for example, metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), etc., and alloys obtained by appropriately combining them can also be used.

[0211] As the conductive layer 152, an oxide containing one or more selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon can be used. For example, it is preferable to use a conductive oxide containing one or more of indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, and indium zinc oxide containing silicon. In particular, the indium tin oxide containing silicon has a relatively large work function, and its work function is, for example, 4.0 eV or more, so it can be suitably used as the conductive layer 152.

[0212] The conductive layer 151 and the conductive layer 152 may each have a laminated structure including a plurality of layers containing different materials. In this case, the conductive layer 151 may include a layer using a material such as a conductive oxide that can be used for the conductive layer 152, and the conductive layer 152 may include a layer using a material such as a metal material that can be used for the conductive layer 151. For example, when the conductive layer 151 has a laminated structure of two or more layers, the layer in contact with the conductive layer 152 may be a layer using a material that can be used for the conductive layer 152.

[0213] The end portion of the conductive layer 151 may have a tapered shape. Specifically, by making the end portion of the conductive layer 151 have a tapered shape with a taper angle less than 90°, the coverage of the structure provided along the side surface of the conductive layer 151 can be improved.

[0214] Figure 4AThis is a diagram when the conductive layer 151 has a stacked structure including multiple layers of different materials. As Figure 4A shown, the conductive layer 151 includes a conductive layer 151a, a conductive layer 151b on the conductive layer 151a, and a conductive layer 151c on the conductive layer 151b. That is, Figure 4A the conductive layer 151 shown has a three-layer stacked structure. Thus, when the conductive layer 151 has a stacked structure including multiple layers, it is sufficient that the visible light reflectance of at least one of the layers constituting the conductive layer 151 is higher than that of the conductive layer 152.

[0215] In Figure 4A the example shown, the conductive layer 151b is sandwiched between the conductive layer 151a and the conductive layer 151c. The conductive layer 151a and the conductive layer 151c can use materials that are less likely to deteriorate compared to the conductive layer 151b. For example, the conductive layer 151a can use a material that is less likely to undergo migration due to contact with the insulating layer 175 compared to the conductive layer 151b. In addition, the conductive layer 151c can use a material that is less likely to be oxidized compared to the conductive layer 151b; and the resistivity of its oxide is lower than that of the oxide of the material used for the conductive layer 151b.

[0216] Thus, by adopting the structure in which the conductive layer 151b is sandwiched between the conductive layer 151a and the conductive layer 151c, the range of choices for the material of the conductive layer 151b can be expanded. Thereby, for example, the conductive layer 151b can be made into a layer whose visible light reflectance is higher than at least one of the conductive layer 151a and the conductive layer 151c. For example, aluminum can be used as the conductive layer 151b. In addition, an aluminum-containing alloy can also be used as the conductive layer 151b. In addition, titanium can be used as the conductive layer 151a. Although the visible light reflectance of titanium is lower than that of aluminum, it is less likely to undergo migration compared to aluminum even when in contact with the insulating layer 175. And, titanium can be used as the conductive layer 151c. Although the visible light reflectance of titanium is lower than that of aluminum, it is less likely to be oxidized compared to aluminum and the resistivity of its oxide is lower than that of aluminum oxide.

[0217] In addition, silver or a silver-containing alloy can also be used as the conductive layer 151c. Silver has the property of having a higher visible light reflectance than titanium. Furthermore, silver is less likely to be oxidized compared to aluminum, and the resistivity of silver oxide is lower than that of aluminum oxide. Thus, when silver or a silver-containing alloy is used as the conductive layer 151c, the visible light reflectance of the conductive layer 151 can be appropriately increased while suppressing an increase in the resistance of the pixel electrode due to the oxidation of the conductive layer 151b. Here, as the silver-containing alloy, for example, an alloy of silver, palladium, and copper (Ag-Pd-Cu, also denoted as APC) can be used. In addition, when silver or a silver-containing alloy is used as the conductive layer 151c and aluminum is used as the conductive layer 151b, the visible light reflectance of the conductive layer 151c can be increased compared to the visible light reflectance of the conductive layer 151b. Here, silver or a silver-containing alloy can also be used as the conductive layer 151b. In addition, silver or a silver-containing alloy can also be used as the conductive layer 151a.

[0218] On the other hand, the etch processability of a film using titanium is superior to that of a film using silver. Therefore, by using titanium as the conductive layer 151c, the conductive layer 151c can be easily formed. In addition, the etch processability of a film using aluminum is also superior to that of a film using silver.

[0219] Thus, by making the conductive layer 151 have a stacked structure of multiple layers, the characteristics of the light-emitting device can be improved. For example, the light-emitting device 1000 can be made into a light-emitting device with high light extraction efficiency and high reliability.

[0220] Here, when the light-emitting device 130 adopts a microcavity structure, by using silver or a silver-containing alloy, which is a material with a high visible light reflectance, as the conductive layer 151c, the light extraction efficiency of the light-emitting device 1000 can be appropriately increased.

[0221] As described above, the side surface of the conductive layer 151 preferably has a tapered shape. Specifically, the side surface of the conductive layer 151 preferably has a tapered shape with a taper angle less than 90°. For example, in Figure 4A the conductive layer 151 having the structure shown, it is preferable that the side surface of at least one of the conductive layer 151a, the conductive layer 151b, and the conductive layer 151c has a tapered shape.

[0222] Figure 4AThe shown conductive layer 151 can be formed by lithography. Specifically, first, a conductive film that will become the conductive layer 151a, a conductive film that will become the conductive layer 151b, and a conductive film that will become the conductive layer 151c are sequentially deposited. Then, a resist mask is formed on the conductive film that will become the conductive layer 151c. Then, for example, by an etching method, the conductive film in the region that does not overlap with the resist mask is removed. Here, by processing the conductive film under conditions where the resist mask is more likely to retreat (shrink) compared to the case where the conductive layer 151 is formed with a non-tapered shape, i.e., a vertical side surface, a conductive layer 151 with a tapered side surface can be formed.

[0223] Here, when the conductive film is processed under conditions where the resist mask is likely to retreat (shrink), the conductive film is sometimes likely to be processed in the horizontal direction. In other words, the isotropy of etching is sometimes higher compared to the case where the conductive layer 151 is formed with a vertical side surface.

[0224] In addition, when the conductive layer 151 has a stacked structure of multiple layers made of different materials, the processability in the horizontal direction of these multiple layers is sometimes different. For example, the processability in the horizontal direction of the conductive layer 151a, the conductive layer 151b, and the conductive layer 151c is sometimes different.

[0225] In this case, sometimes after processing the conductive film, the side surface of the conductive layer 151b is located inside the side surfaces of the conductive layer 151a and the conductive layer 151c to form a protrusion. As a result, there is a concern that the coverage of the conductive layer 152 over the conductive layer 151 is reduced and disconnection of the conductive layer 152 occurs.

[0226] In view of this, it is preferable to provide the insulating layer 156 as Figure 4A shown. Figure 4A An example of providing the insulating layer 156 on the conductive layer 151a in such a manner that the region overlaps with the side surface of the conductive layer 151b is shown. Thereby, disconnection or thinning of the conductive layer 152 due to the protrusion can be suppressed, and thus connection failure or an increase in driving voltage can be suppressed.

[0227] Note that although Figure 4A a structure in which the entire side surface of the conductive layer 151b is covered by the insulating layer 156 is shown, a part of the side surface of the conductive layer 151b may not be covered by the insulating layer 156. The same applies to the pixel electrode having the structure shown below, and a part of the side surface of the conductive layer 151b may not be covered by the insulating layer 156.

[0228] When the conductive layer 151 has Figure 4AWhen the structure shown is used, the conductive layer 152 covers the conductive layers 151a, 151b, 151c and the insulating layer 156 and is electrically connected to the conductive layers 151a, 151b and 151c. Thus, for example, when removing the film deposited after forming the conductive layer 152 by a wet etching method, the liquid medicine does not need to contact the conductive layers 151a, 151b and 151c. Therefore, corrosion occurring in the conductive layers 151a, 151b and 151c can be suppressed. Therefore, the light-emitting device 1000 can be manufactured by a method with a high yield. In addition, the occurrence of defects can be suppressed, and thus a highly reliable light-emitting device 1000 can be realized.

[0229] Here, as Figure 4A shown, the insulating layer 156 preferably has a curved surface. Thus, for example, disconnection occurring in the conductive layer 152 covering the insulating layer 156 can be suppressed as compared with the case where it is perpendicular to the side surface of the insulating layer 156 (parallel to the Z direction). In addition, when the side surface of the insulating layer 156 has a conical shape, specifically, a conical shape with a cone angle less than 90°, for example, disconnection occurring in the conductive layer 152 covering the insulating layer 156 can be suppressed as compared with the case where it is perpendicular to the side surface of the insulating layer 156. Thus, the light-emitting device 1000 can be manufactured by a method with a high yield. In addition, the occurrence of defects is suppressed, and the light-emitting device 1000 can be made into a highly reliable light-emitting device.

[0230] Note that Figure 4A a structure is shown in which the side surface of the conductive layer 151b is located inside the side surface of the conductive layer 151a, but one embodiment of the present invention is not limited to this. For example, the side surface of the conductive layer 151b may also be located outside the side surface of the conductive layer 151a. In addition, the side surface of the conductive layer 151b may also be located outside the side surface of the conductive layer 151c.

[0231] Figures 4B to 4D Another structure of the first electrode 101 is shown. Figure 4B Shown in Figure 4A the first electrode 101, a structure in which the insulating layer 156 covers the side surfaces of the conductive layers 151a, 151b and 151c in addition to the side surface of the conductive layer 151b is shown.

[0232] Figure 4C Shown in Figure 4A the first electrode 101, a structure in which the insulating layer 156 is not provided is shown.

[0233] Figure 4D Shown is a structure in which Figure 4A in the first electrode 101, the conductive layer 151 does not have a stacked structure and the conductive layer 152 has a stacked structure.

[0234] The conductive layer 152a is a layer with better adhesion to the conductive layer 152b than, for example, the insulating layer 175. As the conductive layer 152a, for example, an oxide containing one or more selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon can be used. For example, it is preferable to use a conductive oxide containing one or more of indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium titanium oxide, zinc titanate, aluminum zinc oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, and indium zinc oxide containing silicon. Thereby, film peeling of the conductive layer 152b can be suppressed. In addition, the conductive layer 152b can be prevented from coming into contact with the insulating layer 175.

[0235] The conductive layer 152b is a layer with a higher visible light reflectance (e.g., reflectance of light at a specified wavelength in the range of 400 nm or more and less than 750 nm) than the conductive layer 151, the conductive layer 152a, and the conductive layer 152c. The visible light reflectance of the conductive layer 152b can be, for example, 40% or more and 100% or less, preferably 70% or more and 100% or less. In addition, as the conductive layer 152b, for example, a material with a higher visible light reflectance than aluminum can be used. Specifically, for example, silver or a silver-containing alloy can be used as the conductive layer 152b. As the silver-containing alloy, for example, an alloy of silver, palladium, and copper (APC) can be cited. Thereby, the light-emitting device 1000 can be made into a light-emitting device with high light extraction efficiency. Note that a metal other than silver can also be used as the conductive layer 152b.

[0236] When the conductive layer 151 and the conductive layer 152 are used as anodes, the conductive layer 152c is preferably a layer with a large work function. The conductive layer 152c is, for example, a layer with a larger work function than the conductive layer 152b. As the conductive layer 152c, for example, the same material as that which can be used for the conductive layer 152a can be used. For example, the same material can be used for the conductive layer 152a and the conductive layer 152c. For example, when indium tin oxide is used for the conductive layer 152a, indium tin oxide can also be used for the conductive layer 152c.

[0237] Note that when the conductive layer 151 and the conductive layer 152 are used as cathodes, the conductive layer 152c is preferably a layer with a small work function. The conductive layer 152c is, for example, a layer with a smaller work function than the conductive layer 152b.

[0238] In addition, the conductive layer 152c is preferably a layer with a high visible light transmittance (e.g., the transmittance of light with a specified wavelength in the range of 400 nm or more and less than 750 nm). For example, the visible light transmittance of the conductive layer 152c is preferably higher than that of the conductive layer 151 and the conductive layer 152b. For example, the visible light transmittance of the conductive layer 152c can be 40% or more and 100% or less, preferably 60% or more and 100% or less, more preferably 70% or more and 100% or less, and further preferably 80% or more and 100% or less. Thereby, the light emitted from the organic compound layer 103 and absorbed by the conductive layer 152c can be reduced. In addition, as described above, the conductive layer 152b under the conductive layer 152c can be a layer with a high visible light reflectance. Therefore, the light-emitting device 1000 can be made into a light-emitting device with high light extraction efficiency.

[0239] Next, with reference to Figures 5A to 10C an example of the manufacturing method of the light-emitting device 1000 having the Figure 3A shown structure will be described. The organic compound layer of the light-emitting device included in the light-emitting device 1000 is formed through a manufacturing process including water treatment. By using the light-emitting device of one aspect of the present invention as the light-emitting device included in the light-emitting device of one aspect of the present invention, a light-emitting device including a light-emitting device with a low driving voltage and high luminous efficiency can be provided.

[0240] [Example of Manufacturing Method] The thin films (insulating films, semiconductor films, conductive films, etc.) constituting the display device can be formed by sputtering, chemical vapor deposition (CVD: Chemical Vapor Deposition), vacuum evaporation, pulsed laser deposition (PLD: Pulsed Laser Deposition), or ALD method, etc. As the CVD method, there are plasma-enhanced chemical vapor deposition (PECVD: Plasma Enhanced CVD) method and thermal CVD method, etc. In addition, as one of the thermal CVD methods, there is metal organic chemical vapor deposition (MOCVD: Metal Organic CVD) method.

[0241] In addition, the thin films (insulating films, semiconductor films, conductive films, etc.) constituting the display device can be formed by wet deposition methods such as spin coating, dipping, spraying, inkjet, dispenser method, screen printing, offset printing, doctor knife method, slot coating method, roll coating method, curtain coating method, or blade coating method.

[0242] In particular, when manufacturing a light-emitting device, vacuum processes such as evaporation methods and solution processes such as spin coating and inkjet printing can be utilized. As evaporation methods, physical vapor deposition (PVD) methods such as sputtering, ion plating, ion beam evaporation, molecular beam epitaxy, and vacuum evaporation, as well as chemical vapor deposition (CVD) methods can be cited. In particular, methods such as evaporation (e.g., vacuum evaporation), coating (dip coating, dye coating, bar coating, spin coating, spray coating), and printing (inkjet printing, screen printing (stencil printing), offset printing (lithography), flexographic printing (letterpress printing), gravure printing, or microcontact printing, etc.) can be used to form functional layers (hole injection layer, hole transport layer, hole blocking layer, light-emitting layer, electron blocking layer, electron transport layer, and electron injection layer, etc.) included in the organic compound layer.

[0243] In addition, when processing a thin film constituting a display device, for example, photolithography can be used for processing. Alternatively, the thin film can also be processed using nanoimprinting, sandblasting, or lift-off methods. In addition, island-shaped thin films can be directly formed by a deposition method using a masking mask such as a metal mask.

[0244] As photolithography, for example, lithography can be used. Typically, lithography has the following two methods. One is a method of forming a resist mask on a thin film to be processed, processing the thin film by etching, for example, and removing the resist mask. The other is a method of depositing a photosensitive thin film, followed by exposure and development to process the thin film into a desired shape.

[0245] In lithography, as the light used for exposure, for example, i-line (wavelength: 365 nm), g-line (wavelength: 436 nm), h-line (wavelength: 405 nm), or light mixed from these lights can be used. In addition, ultraviolet light, KrF laser, or ArF laser can also be used. In addition, immersion exposure technology can also be used for exposure. In addition, as the light used for exposure, extreme ultraviolet (EUV) light or X-rays can also be used. In addition, instead of the light used for exposure, an electron beam can also be used. When using extreme ultraviolet light, X-rays, or an electron beam, extremely fine processing can be performed, so it is preferred. In addition, when exposure is performed by scanning a light beam such as an electron beam, a photomask is not required.

[0246] In the etching of a thin film, dry etching, wet etching, sandblasting, or the like can be used.

[0247] First, as Figure 5AAn insulating layer 171 is formed on a substrate (not shown). Next, a conductive layer 172 and a conductive layer 179 are formed on the insulating layer 171, and an insulating layer 173 is formed on the insulating layer 171 so as to cover the conductive layer 172 and the conductive layer 179. Next, an insulating layer 174 is formed on the insulating layer 173, and an insulating layer 175 is formed on the insulating layer 174.

[0248] As the substrate, a substrate having at least heat resistance capable of withstanding the subsequent heat treatment can be used. In the case of using an insulating substrate as the substrate, a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, an organic resin substrate, or the like can be used. In addition, a single crystal semiconductor substrate or a polycrystalline semiconductor substrate made of silicon or silicon carbide, a compound semiconductor substrate made of silicon germanium, an SOI substrate, or the like can also be used.

[0249] Next, as Figure 5A shown, an opening reaching the conductive layer 172 is formed in the insulating layer 175, the insulating layer 174, and the insulating layer 173. Next, a plug 176 is formed so as to fill the opening.

[0250] Next, as Figure 5A shown, a conductive film 151f that will later become a conductive layer 151R, a conductive layer 151G, a conductive layer 151B, and a conductive layer 151C is formed on the plug 176 and the insulating layer 175. The conductive film 151f can be formed, for example, by a sputtering method or a vacuum evaporation method. In addition, a metal material can be used as the conductive film 151f, for example.

[0251] Next, as Figure 5A shown, a conductive film 152f that will later become a conductive layer 152R, a conductive layer 152G, a conductive layer 152B, and a conductive layer 152C is formed on the conductive film 151f. The conductive film 152f can be formed, for example, by a sputtering method or a vacuum evaporation method. In addition, a conductive oxide can be used as the conductive film 152f, for example. Alternatively, a laminated structure of a film using a metal material and a film using a conductive oxide on the film can be adopted as the conductive film 152f. For example, a laminated structure of a film using titanium, silver, or a silver-containing alloy and a film using a conductive oxide on the film can be adopted as the conductive film 152f.

[0252] In addition, the conductive film 152f can be formed by ALD method. In this case, as the conductive film 152f, an oxide containing one or more selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon can be used. At this time, by repeating the cycle with the introduction of a precursor (generally sometimes referred to as a precursor or metal precursor, etc.), the purge of the precursor, the introduction of an oxidant (generally sometimes referred to as a reactant, reactant, or non-metal precursor, etc.), and the purge of the oxidant as one cycle, the conductive film 152f can be formed. Here, when forming an oxide film containing multiple metals such as indium tin oxide as the conductive film 152f, the metal composition can be controlled by changing the number of cycles according to the type of precursor.

[0253] For example, in the case of depositing an indium tin oxide film as the conductive film 152f, after introducing a precursor containing indium, the precursor is purged and an oxidant is introduced to form an In-O film. Next, after introducing a precursor containing tin, the precursor is purged and an oxidant is introduced to form an Sn-O film. Here, by making the number of cycles when forming the In-O film more than the number of cycles when forming the Sn-O film, the number of In atoms contained in the conductive film 152f can be made more than the number of Sn atoms.

[0254] In addition, for example, in the case of depositing a zinc oxide film as the conductive film 152f, a Zn-O film is formed by the above process. In addition, for example, in the case of depositing an aluminum zinc oxide film as the conductive film 152f, a Zn-O film and an Al-O film are formed by the above process. In addition, for example, in the case of depositing a titanium oxide film as the conductive film 152f, a Ti-O film is formed by the above process. In addition, for example, in the case of depositing an indium tin oxide film containing silicon as the conductive film 152f, an In-O film, an Sn-O film, and an Si-O film are formed by the above process. In addition, for example, in the case of depositing a zinc oxide film containing gallium, a Ga-O film and a Zn-O film are formed by the above process.

[0255] As a precursor containing indium, for example, triethylindium, trimethylindium, or [1,1,1-trimethyl-N-(trimethylsilyl)amide]-indium can be used. As a precursor containing tin, for example, tin chloride or tin bis(dimethylamide) can be used. As a precursor containing zinc, for example, diethylzinc or dimethylzinc can be used. As a precursor containing gallium, for example, triethylgallium can be used. As a precursor containing titanium, for example, titanium chloride, titanium bis(dimethylamide), or tetraisopropyl titanate can be used. As a precursor containing aluminum, for example, aluminum chloride or trimethylaluminum can be used. As a precursor containing silicon, for example, trisilylamine, bis(diethylamino)silane, tris(dimethylamino)silane, bis(tert-butylamino)silane, or bis(ethylmethylamino)silane can be used. In addition, as the oxidant, water vapor, oxygen plasma, or ozone gas can be used.

[0256] Next, as Figure 5A shown, a resist mask 191 is formed on the conductive film 151f and the conductive film 152f. The resist mask 191 can be formed by applying a photosensitive material (photoresist) and then performing exposure and development.

[0257] Next, as Figure 5B shown, for example, by using an etching method, specifically, for example, by using a dry etching method, the conductive film 151f and the conductive film 152f in the regions that do not overlap with the resist mask 191 are removed to form pixel electrodes including the conductive layer 151 and the conductive layer 152. Note that, when the conductive film 151f includes a layer using a conductive oxide such as indium tin oxide, the layer can also be removed by a wet etching method. Note that, for example, when a part of the conductive film 151f is removed by a dry etching method, recesses may be formed in the region of the insulating layer 175 that does not overlap with the conductive layer 151.

[0258] Note that, after processing the conductive film 152f using lithography to form the conductive layer 152R, the conductive layer 152G, the conductive layer 152B, and the conductive layer 152C, the conductive film 151f can be processed using the conductive layer 152R, the conductive layer 152G, the conductive layer 152B, and the conductive layer 152C as masks. Specifically, for example, after forming a resist mask, a part of the conductive film 152f is removed by an etching method. The conductive film 152f can be removed, for example, by a wet etching method. Note that the conductive film 152f can also be removed by a dry etching method. Then, it is preferable to remove the conductive film 151f by a wet etching method.

[0259] Here, it is preferable to perform a hydrophobization treatment on the conductive layer 152. By the hydrophobization treatment, the surface state of the object to be treated can be changed from hydrophilic to hydrophobic, or the hydrophobicity of the surface of the object to be treated can be increased. By performing the hydrophobization treatment on the conductive layer 152, the adhesion between the conductive layer 152 and the organic compound layer 103 to be formed in a later process can be improved to suppress film peeling. Note that the hydrophobization treatment may not be performed.

[0260] Next, as Figure 5C shown, the resist mask 191 is removed. The resist mask 191 can be removed, for example, by ashing using oxygen plasma. Alternatively, oxygen gas and CF 4 , C 4 F 8 , SF 6 , CHF 3 , Cl 2 , H 2 O, BCl 3 or a Group 18 element such as He can be used. Alternatively, the resist mask 191 can be removed by wet etching.

[0261] Next, as Figure 5D shown, an insulating film 156f that will later become insulating layers 156R, 156G, 156B, and 156C is formed on the conductive layer 151R and conductive layer 152R, conductive layer 151G and conductive layer 152G, conductive layer 151B and conductive layer 152B, conductive layer 151C and conductive layer 152C, and the insulating layer 175. The insulating film 156f can be formed, for example, by CVD method, ALD method, sputtering method, or vacuum evaporation method.

[0262] The insulating film 156f can use an inorganic material. As the insulating film 156f, for example, an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitrogen oxide insulating film can be used. For example, as the insulating film 156f, an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitrogen oxide insulating film containing silicon can be used. For example, silicon oxynitride can be used as the insulating film 156f.

[0263] Next, as Figure 5E shown, the insulating film 156f is processed to form insulating layers 156R, 156G, 156B, and 156C. For example, by etching the top surface of the insulating film 156f substantially uniformly, the insulating layer 156 can be formed. The process of etching uniformly in this way for planarization is also called etch-back treatment. In addition, the insulating layer 156 can also be formed using lithography technology.

[0264] Next, as Figure 6A shown, an organic compound film 103Rf that will later become the organic compound layer 103R is formed on the conductive layer 152R, conductive layer 152G, conductive layer 152B, insulating layer 156R, insulating layer 156G, insulating layer 156B, and the insulating layer 175.

[0265] As Figure 6A shown, the organic compound film 103Rf is not formed on the conductive layer 152C. For example, by using a mask for defining the deposition range (also called a region mask or a coarse metal mask, etc. to distinguish it from a high-precision metal mask), the organic compound film 103Rf can be deposited only in the desired region. By adopting a deposition process using a region mask and a processing process using a resist mask, a light-emitting device can be manufactured with a relatively simple process.

[0266] The organic compound film 103Rf can be formed, for example, by evaporation method, specifically by vacuum evaporation method. In addition, the organic compound film 103Rf can also be formed by methods such as transfer method, printing method, inkjet method, and coating method.

[0267] Next, as Figure 6AAs shown, a sacrificial film 158Rf that will later become a sacrificial layer 158R and a mask film 159Rf that will later become a mask layer 159R are sequentially formed on the organic compound film 103Rf, the conductive layer 152C, and the insulating layer 175.

[0268] Note that, in the present embodiment, an example in which the mask film is composed of a two-layer structure of the sacrificial film 158Rf and the mask film 159Rf is shown, but the mask film may have a single-layer structure or a laminated structure of three or more layers. Note that, in this specification and the like, the mask layer may sometimes be referred to as the sacrificial layer.

[0269] By providing the sacrificial layer on the organic compound film 103Rf, damage to the organic compound film 103Rf in the manufacturing process of the display device can be reduced, and the reliability of the light-emitting device can be improved.

[0270] As the sacrificial film 158Rf, a film with high resistance to the processing conditions of the organic compound film 103Rf is used. Specifically, a film with a large etching selectivity ratio with respect to the organic compound film 103Rf is used. As the mask film 159Rf, a film with a large etching selectivity ratio with respect to the sacrificial film 158Rf is used.

[0271] In addition, the sacrificial film 158Rf and the mask film 159Rf are formed at a temperature lower than the heat-resistant temperature of the organic compound film 103Rf. The substrate temperature when forming the sacrificial film 158Rf and the sacrificial film 159Rf is typically 200°C or lower, preferably 150°C or lower, more preferably 120°C or lower, further preferably 100°C or lower, and still more preferably 80°C or lower.

[0272] As the sacrificial film 158Rf and the mask film 159Rf, a film that can be removed by wet etching is preferably used. By using wet etching, compared with the case of using dry etching, damage to the organic compound film 103Rf during the processing of the sacrificial film 158Rf and the mask film 159Rf can be reduced.

[0273] The sacrificial film 158Rf and the mask film 159Rf can be formed, for example, by sputtering, ALD (thermal ALD, PEALD), CVD, or vacuum evaporation. In addition, they can also be formed by the above-mentioned wet deposition methods.

[0274] The sacrificial film 158Rf formed on and in contact with the organic compound film 103Rf is preferably formed by a forming method that causes less damage to the organic compound film 103Rf compared to when forming the mask film 159Rf. For example, compared with sputtering, it is more preferable to use ALD or vacuum evaporation to form the sacrificial film 158Rf.

[0275] As the sacrificial film 158Rf and the mask film 159Rf, for example, one or more of a metal film, an alloy film, a metal oxide film, a semiconductor film, an organic insulating film, and an inorganic insulating film can be used.

[0276] As the sacrificial film 158Rf and the mask film 159Rf, for example, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum, or alloy materials containing such metal materials can be used respectively. Low melting point materials such as aluminum or silver are particularly preferably used. By using a metal material capable of shielding ultraviolet rays as one or both of the sacrificial film 158Rf and the mask film 159Rf, the irradiation of ultraviolet rays to the organic compound film 103Rf can be suppressed, and the deterioration of the organic compound film 103Rf can be suppressed, so it is preferred.

[0277] In addition, as the sacrificial film 158Rf and the mask film 159Rf, metal oxides such as In-Ga-Zn oxide, indium oxide, In-Zn oxide, In-Sn oxide, indium titanium oxide (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide), or indium tin oxide containing silicon can be used respectively.

[0278] Note that the above gallium can also be replaced with an element M (M is one or more of aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium).

[0279] In addition, as the sacrificial film and the mask film, a film containing a material having light-shielding properties, particularly ultraviolet light-shielding properties, is preferably used. As the light-shielding material, various materials such as a metal, an insulator, a semiconductor, and a semimetal having ultraviolet light-shielding properties can be used. Since a part or all of the sacrificial film and the mask film will be removed in a later process, the sacrificial film and the mask film are preferably films that can be processed by etching, and particularly preferably films with good processability.

[0280] When a semiconductor material such as silicon or germanium is used as the sacrificial film and the mask film, for example, the affinity of the material for the semiconductor manufacturing process is high, so it is preferred. Alternatively, an oxide or nitride of the above semiconductor material can be used. Alternatively, a non-metallic material such as carbon or its compound can be used. In addition, metals such as titanium, tantalum, tungsten, chromium, and aluminum, or alloys containing one or more of them can be cited. In addition, oxides containing the above metals such as titanium oxide or chromium oxide, or nitrides such as titanium nitride, chromium nitride, or tantalum nitride can be used.

[0281] In addition, by using a film containing a material having ultraviolet light-shielding properties as a sacrificial film and a mask film, for example, ultraviolet light can be prevented from irradiating the organic compound layer during the exposure process. By suppressing damage to the organic compound layer caused by ultraviolet light, the reliability of the light-emitting device can be improved.

[0282] Note that the film containing a material having ultraviolet light-shielding properties also exhibits the same effect when used as the material for the inorganic insulating film 125f described later.

[0283] In addition, various inorganic insulating films can be used as the sacrificial film 158Rf and the mask film 159Rf, respectively. In particular, an oxide insulating film has a higher adhesion to the organic compound film 103Rf than a nitride insulating film, and is therefore preferred. For example, inorganic insulating materials such as alumina, hafnium oxide, or silicon oxide can be used for the sacrificial film 158Rf and the mask film 159Rf. For example, an alumina film can be formed for the sacrificial film 158Rf and the mask film 159Rf by using the ALD method. By using the ALD method, damage to the substrate (especially to the organic compound layer) can be reduced, and is therefore preferred.

[0284] For example, an inorganic insulating film (e.g., an alumina film) formed by using the ALD method can be used as the sacrificial film 158Rf, and an inorganic film (e.g., an In-Ga-Zn oxide film, an aluminum film, or a tungsten film) formed by using the sputtering method can be used as the mask film 159Rf.

[0285] In addition, the same inorganic insulating film can be used for both the sacrificial layer 158Rf and the inorganic insulating layer 125 to be formed later. For example, an alumina film formed by using the ALD method can be used for both the sacrificial layer 158Rf and the inorganic insulating layer 125. Here, the sacrificial layer 158Rf and the inorganic insulating layer 125 can be deposited under the same deposition conditions or different deposition conditions. For example, by depositing the sacrificial film 158Rf under the same conditions as the inorganic insulating layer 125, an insulating layer with high barrier properties against at least one of water and oxygen can be formed as the sacrificial film 158Rf. On the other hand, since most or all of the sacrificial film 158Rf will be removed in a later process, it is preferably easy to process. Therefore, the sacrificial layer 158Rf is preferably deposited under conditions with a lower substrate temperature than the inorganic insulating layer 125 during deposition.

[0286] As one or both of the sacrificial film 158Rf and the mask film 159Rf, an organic material can also be used. For example, as the organic material, a material that can be dissolved in a solvent that is at least chemically stable to the film located at the uppermost part of the organic compound film 103Rf can be used. In particular, a material that can be dissolved in water or alcohol can be appropriately used. When depositing the above material, preferably, the material is applied by a wet deposition method in a state where the material is dissolved in a solvent such as water or alcohol, and then a heat treatment for evaporating the solvent is performed. At this time, it is preferable to perform the heat treatment in a reduced-pressure atmosphere, whereby the solvent can be removed at a low temperature and in a short time, and the thermal damage to the organic compound film 103Rf can be reduced.

[0287] As the sacrificial film 158Rf and the mask film 159Rf, organic resins such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerol, pullulan, water-soluble cellulose, a polyamide resin soluble in alcohol, or a fluororesin such as a perfluoropolymer can also be used.

[0288] For example, as the sacrificial film 158Rf, an organic film (e.g., a PVA film) formed by any one of vapor deposition and the above wet deposition method can be used, and as the mask film 159Rf, an inorganic film (e.g., a silicon nitride film) formed by sputtering can be used.

[0289] Next, as shown in Figure 6A an antireflection mask 190R is formed on the mask film 159Rf. The antireflection mask 190R can be formed by applying a photosensitive material (photoresist) and performing exposure and development.

[0290] The antireflection mask 190R can use a positive resist material or a negative resist material.

[0291] The antireflection mask 190R is provided at a position overlapping with the conductive layer 152R. The antireflection mask 190R is preferably also provided at a position overlapping with the conductive layer 152C. Thereby, damage to the conductive layer 152C during the manufacturing process of the display device can be suppressed. Note that the antireflection mask 190R may not be provided on the conductive layer 152C. In addition, as shown in the cross-sectional view along B1 - B2 in Figure 6A the antireflection mask 190R is preferably provided so as to cover the end portion of the organic compound film 103Rf to the end portion of the conductive layer 152C (the end portion on the organic compound film 103Rf side).

[0292] Next, as shown in Figure 6BAs shown, a part of the mask film 159Rf is removed using the resist mask 190R to form the mask layer 159R. The mask layer 159R remains on the conductive layer 152R and the conductive layer 152C. Then, the resist mask 190R is removed. Next, the mask layer 159R is used as a mask (also referred to as a hard mask) to remove a part of the sacrificial film 158Rf to form the sacrificial layer 158R.

[0293] The sacrificial film 158Rf and the mask film 159Rf can be processed by a wet etching method or a dry etching method, respectively. The processing of the sacrificial film 158Rf and the mask film 159Rf is preferably performed by isotropic etching.

[0294] By using the wet etching method, compared with the case of using the dry etching method, the damage to the organic compound film 103Rf during the processing of the sacrificial film 158Rf and the mask film 159Rf can be reduced. When using the wet etching method, for example, it is preferable to use a developing solution, an aqueous solution of tetramethylammonium hydroxide (TMAH), dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a liquid medicine such as a mixed liquid thereof.

[0295] When processing the mask film 159Rf, the organic compound film 103Rf is not exposed, so the range of choices for the processing method is wider compared with the case of processing the sacrificial film 158Rf. Specifically, when processing the mask film 159Rf, even if an oxygen-containing gas is used as the etching gas, the deterioration of the organic compound film 103Rf can be suppressed.

[0296] In addition, when using the dry etching method in the processing of the sacrificial film 158Rf, the deterioration of the organic compound film 103Rf can be suppressed by not using an oxygen-containing gas as the etching gas. In the case of using the dry etching method, for example, it is preferable to use a gas containing CF 4 、C 4 F 8 、SF 6 、CHF 3 、Cl 2 、H 2 O、BCl 3 or a gas of a Group 18 element such as He as the etching gas.

[0297] For example, when using an aluminum oxide film formed by the ALD method as the sacrificial film 158Rf, CHF 3 and He or CHF 3 、He and CH 4 A part of the sacrificial film 158Rf is removed by dry etching. In addition, when using an In-Ga-Zn oxide film formed by sputtering as the mask film 159Rf, a part of the mask film 159Rf can be removed by wet etching using dilute phosphoric acid. Or, CH 4The mask film 159Rf is partially removed by dry etching using Ar. Alternatively, a part of the mask film 159Rf can be removed by wet etching using dilute phosphoric acid. Additionally, in the case where a tungsten film formed by sputtering is used as the mask film 159Rf, SF 6 , CF 4 and O 2 or CF 4 , Cl 2 and O 2 can be used to remove a part of the mask film 159Rf by dry etching.

[0298] The resist mask 190R can be removed by the same method as the resist mask 191. The resist mask 190R can be removed, for example, by ashing using oxygen plasma. Alternatively, oxygen gas and CF 4 , C 4 F 8 , SF 6 , CHF 3 , Cl 2 , H 2 O, BCl 3 or Group 18 elements such as He can be used. Alternatively, the resist mask 190R can be removed by wet etching. At this time, since the sacrificial film 158Rf is located on the outermost surface and the organic compound film 103Rf is not exposed, damage to the organic compound film 103Rf can be suppressed in the process of removing the resist mask 190R. Additionally, the range of choices for the method of removing the resist mask 190R can be expanded.

[0299] Next, as Figure 6B shown, the organic compound film 103Rf is processed to form the organic compound layer 103R. For example, the mask layer 159R and the sacrificial layer 158R are used as hard masks to remove a part of the organic compound film 103Rf to form the organic compound layer 103R.

[0300] Thus, as Figure 6B shown, a stacked structure of the organic compound layer 103R, the sacrificial layer 158R, and the mask layer 159R remains on the conductive layer 152R. In addition, the conductive layer 152G and the conductive layer 152B are exposed.

[0301] Figure 6B An example is shown where the end of the organic compound layer 103R is located inside the end of the conductive layer 152R. By adopting this structure, miniaturization of the pixel can be achieved, and a high-definition display can be manufactured. Note that although not shown in Figure 6B , recesses may sometimes be formed in the region of the insulating layer 175 that does not overlap with the organic compound layer 103R due to the above-described etching process.

[0302] As described above, the resist mask 190R is preferably disposed so as to cover the end of the organic compound layer 103R to the end of the conductive layer 152C (the end on the organic compound layer 103R side) between the dashed lines B1 - B2. Thus, as Figure 6B shown, the sacrificial layer 158R and the mask layer 159R are disposed so as to cover the end of the organic compound layer 103R to the end of the conductive layer 152C (the end on the organic compound layer 103R side) between the dashed lines B1 - B2. Therefore, for example, exposure of the insulating layer 175 between the dashed lines B1 - B2 can be suppressed. Thereby, removal of a part of the insulating layer 175, the insulating layer 174, and the insulating layer 173 by etching or the like can be prevented, and thus exposure of the conductive layer 179 can be prevented. Therefore, unintentional electrical connection of the conductive layer 179 to other conductive layers can be suppressed. For example, a short circuit between the conductive layer 179 and the common electrode 155 to be formed in a later process can be suppressed.

[0303] Preferably, the organic compound film 103Rf is processed by anisotropic etching. Anisotropic dry etching is particularly preferred. Alternatively, wet etching may also be used.

[0304] When using the dry etching method, deterioration of the organic compound film 103Rf can be suppressed by not using an oxygen-containing gas as the etching gas.

[0305] In addition, an oxygen-containing gas can also be used as the etching gas. When the etching gas contains oxygen, the etching rate can be increased. Therefore, etching can be performed under low-power conditions while maintaining a sufficient etching rate. Therefore, damage to the organic compound film 103Rf can be suppressed. Also, defects such as adhesion of reaction products generated during etching can be suppressed.

[0306] When using the dry etching method, for example, it is preferable to use a gas containing one or more of H 2 , CF 4 , C 4 F 8 , SF 6 , CHF 3 , Cl 2 , H 2 O, BCl 3 and a gas of one or more of the Group 18 elements such as He or Ar as the etching gas. Alternatively, it is preferable to use a gas containing one or more of the above gases and oxygen as the etching gas. Alternatively, oxygen gas can also be used as the etching gas. Specifically, for example, a gas containing H 2 and Ar or a gas containing CF 4 and He can be used as the etching gas. In addition, for example, a gas containing CF 4 , He, and oxygen can be used as the etching gas. Further, for example, a gas containing H 2gases such as Ar and oxygen-containing gases are used as etching gases.

[0307] As described above, in one aspect of the present invention, a resist mask 190R is formed on the mask film 159Rf, and a part of the mask film 159Rf is removed using the resist mask 190R to form a mask layer 159R. Then, a part of the organic compound film 103Rf is removed using the mask layer 159R as a hard mask to form an organic compound layer 103R. Therefore, it can be said that the organic compound layer 103R is formed by processing the organic compound film 103Rf using lithography. In addition, a part of the organic compound film 103Rf can be removed using the resist mask 190R. Then, the resist mask 190R can also be removed.

[0308] Next, for example, it is preferable to hydrophobize the conductive layer 152G. When processing the organic compound film 103Rf, the surface state of the conductive layer 152G sometimes becomes hydrophilic. By hydrophobizing the conductive layer 152G, for example, the adhesion between the conductive layer 152G and the layer to be formed in the subsequent process (here, the organic compound layer 103G) can be improved to suppress film peeling. Note that the hydrophobization treatment may not be performed.

[0309] Next, as Figure 7A shown, an organic compound film 103Gf that will become the organic compound layer 103G later is formed on the conductive layer 152G, the conductive layer 152B, the insulating layer 156R, the insulating layer 156G, the insulating layer 156B, the mask layer 159R, and the insulating layer 175.

[0310] The organic compound film 103Gf can be formed by the same method as the method that can be used when forming the organic compound film 103Rf. In addition, the organic compound film 103Gf can have the same structure as the organic compound film 103Rf.

[0311] Next, as Figure 7A shown, a sacrificial film 158Gf that will become the sacrificial layer 158G later and a mask film 159Gf that will become the mask layer 159G later are sequentially formed on the organic compound film 103Gf and the mask layer 159R. Then, a resist mask 190G is formed. The materials and formation methods of the sacrificial film 158Gf and the mask film 159Gf are the same as the conditions that can be used for the sacrificial film 158Rf and the mask film 159Rf. The materials and formation methods of the resist mask 190G are the same as the conditions that can be applied to the resist mask 190R.

[0312] The resist mask 190G is provided at a position overlapping with the conductive layer 152G.

[0313] Next, as Figure 7BAs shown, a part of the mask film 159Gf is removed using the resist mask 190G to form the mask layer 159G. The mask layer 159G remains on the conductive layer 152G. Then, the resist mask 190G is removed. Next, the mask layer 159G is used as a mask to remove a part of the sacrificial film 158Gf to form the sacrificial layer 158G. Next, the organic compound film 103Gf is processed to form the organic compound layer 103G. For example, the mask layer 159G and the sacrificial layer 158G are used as hard masks to remove a part of the organic compound film 103Gf to form the organic compound layer 103G.

[0314] Thus, as Figure 7B shown, a stacked structure of the organic compound layer 103G, the sacrificial layer 158G, and the mask layer 159G remains on the conductive layer 152G. In addition, the mask layer 159R and the conductive layer 152B are exposed.

[0315] Next, for example, it is preferable to perform a hydrophobization treatment on the conductive layer 152B. When processing the organic compound film 103Gf, for example, the surface state of the conductive layer 152B sometimes becomes hydrophilic. By performing the hydrophobization treatment on the conductive layer 152B, for example, the adhesion between the conductive layer 152B and the layer to be formed in a later process (here, the organic compound layer 103B) can be improved to suppress film peeling. Note that the hydrophobization treatment may not be performed.

[0316] Next, as Figure 7C shown, an organic compound film 103Bf that will later become the organic compound layer 103B is formed on the conductive layer 152B, the insulating layer 156R, the insulating layer 156G, the insulating layer 156B, the mask layer 159R, the mask layer 159G, and the insulating layer 175.

[0317] The organic compound film 103Bf can be formed in the same manner as the method that can be used when forming the organic compound film 103Rf. In addition, the organic compound film 103Bf can have the same structure as the organic compound film 103Rf.

[0318] Next, as Figure 7C shown, a sacrificial film 158Bf that will later become the sacrificial layer 158B and a mask film 159Bf that will later become the mask layer 159B are sequentially formed on the organic compound film 103Bf and the mask layer 159R. Then, a resist mask 190B is formed. The materials and formation methods of the sacrificial film 158Bf and the mask film 159Bf are the same as the conditions that can be used for the sacrificial film 158Rf and the mask film 159Rf. The materials and formation methods of the resist mask 190B are the same as the conditions that can be applied to the resist mask 190R.

[0319] The resist mask 190B is provided at a position overlapping with the conductive layer 152B.

[0320] Next, as Figure 7D shown, a part of the mask film 159Bf is removed using the resist mask 190B to form the mask layer 159B. The mask layer 159B remains on the conductive layer 152B. Then, the resist mask 190B is removed. Next, the mask layer 159B is used as a mask to remove a part of the sacrificial film 158Bf to form the sacrificial layer 158B. Next, the organic compound film 103Bf is processed to form the organic compound layer 103B. For example, the mask layer 159B and the sacrificial layer 158B are used as hard masks to remove a part of the organic compound film 103Bf to form the organic compound layer 103B.

[0321] Thus, as Figure 7D shown, a stacked structure of the organic compound layer 103B, the sacrificial layer 158B, and the mask layer 159B remains on the conductive layer 152B. In addition, the mask layer 159R and the mask layer 159G are exposed.

[0322] Note that the sides of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B are each preferably perpendicular or substantially perpendicular to the formation surface. For example, the angle formed by the formation surface and these sides is preferably 60 degrees or more and 90 degrees or less.

[0323] As described above, the distance between two adjacent organic compound layers among the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B formed using lithography can be reduced to 8 μm or less, 5 μm or less, 3 μm or less, 2 μm or less, or 1 μm or less. Here, for example, this distance can be defined based on the distance between the opposite ends of two adjacent organic compound layers among the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. In this way, by reducing the distance between the island-shaped organic compound layers, a display device with high clarity and a large aperture ratio can be provided. In addition, the distance between the first electrodes of adjacent light-emitting devices can also be reduced, for example, it can be 10 μm or less, 8 μm or less, 5 μm or less, 3 μm or less, 2 μm or less. In addition, the distance between the first electrodes of adjacent light-emitting devices is preferably 2 μm or more and 5 μm or less.

[0324] Next, as Figure 8AAs shown, it is preferable to remove the mask layer 159R, the mask layer 159G, and the mask layer 159B. Depending on subsequent processes, the sacrificial layer 158R, the sacrificial layer 158G, the sacrificial layer 158B, the mask layer 159R, the mask layer 159G, and the mask layer 159B may sometimes remain in the display device. By removing the mask layer 159R, the mask layer 159G, and the mask layer 159B at this stage, it is possible to prevent the mask layer 159R, the mask layer 159G, and the mask layer 159B from remaining in the display device. For example, in the case where a conductive material is used for the mask layer 159R, the mask layer 159G, and the mask layer 159B, by removing the mask layer 159R, the mask layer 159G, and the mask layer 159B in advance, it is possible to suppress the generation of leakage current and the formation of capacitance due to the remaining mask layer 159R, the mask layer 159G, and the mask layer 159B.

[0325] Note that although the case of removing the mask layer 159R, the mask layer 159G, and the mask layer 159B is described as an example in this embodiment, it is also possible not to remove the mask layer 159R, the mask layer 159G, and the mask layer 159B. For example, when the mask layer 159R, the mask layer 159G, and the mask layer 159B contain the above-mentioned material having ultraviolet light-shielding properties, by not removing the above mask layer and proceeding to the next process, it is possible to protect the organic compound layer from ultraviolet light, so it is preferable.

[0326] As the removal process of the mask layer, the same method as the processing process of the mask film can be used. By using the wet etching method, compared with the case of using the dry etching method, the damage to the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B during the removal of the mask layer can be reduced.

[0327] In addition, the mask layer can also be removed by dissolving it in a solvent such as water or alcohol. As the alcohol, ethanol, methanol, isopropyl alcohol (IPA), or glycerol, etc. can be cited.

[0328] After removing the mask layer, a drying process can also be performed to remove the water contained in the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B and the water adsorbed on the surface of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. For example, heat treatment can also be performed in an inert gas atmosphere or a reduced pressure atmosphere. The heat treatment can be performed at a substrate temperature of 50°C or higher and 200°C or lower, preferably 60°C or higher and 150°C or lower, and more preferably 70°C or higher and 120°C or lower. By adopting a reduced pressure atmosphere, drying can be performed at a lower temperature, so it is preferable.

[0329] Next, as Figure 8BAs shown, an inorganic insulating film 125f that will later become an inorganic insulating layer 125 is formed so as to cover the organic compound layer 103R, the organic compound layer 103G, the organic compound layer 103B, the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B.

[0330] As described later, an insulating film 127f that will later become an insulating layer 127 is formed so as to contact the top surface of the inorganic insulating film 125f. Therefore, the top surface of the inorganic insulating film 125f preferably has high affinity with the material for this insulating film (for example, a photosensitive resin composition containing an acrylic resin). To improve this affinity, it is preferable to perform a surface treatment to hydrophobize (or increase its hydrophobicity) the top surface of the inorganic insulating film 125f. For example, it is preferable to perform treatment using a silylating agent such as hexamethyldisilazane (HMDS). By hydrophobizing the top surface of the inorganic insulating film 125f in this way, the insulating film 127f can be formed with high adhesion. In addition, as the surface treatment, the above hydrophobization treatment can also be performed.

[0331] Next, as Figure 8C shown, an insulating film 127f that will later become an insulating layer 127 is formed on the inorganic insulating film 125f.

[0332] The inorganic insulating film 125f and the insulating film 127f are preferably deposited by a formation method that causes less damage to the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. In particular, since the inorganic insulating film 125f is formed so as to contact the sides of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B, the inorganic insulating film 125f is preferably deposited by a formation method that causes less damage to the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B than when depositing the insulating film 127f.

[0333] In addition, the inorganic insulating film 125f and the insulating film 127f are each formed at a temperature lower than the heat-resistant temperature of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. By increasing the substrate temperature during deposition, an inorganic insulating film 125f with a low impurity concentration and high barrier properties against at least one of water and oxygen can be formed even if its thickness is thin.

[0334] The substrate temperature when forming the inorganic insulating film 125f and the insulating film 127f is each preferably 60 °C or higher, 80 °C or higher, 100 °C or higher, or 120 °C or higher and 200 °C or lower, 180 °C or lower, 160 °C or lower, 150 °C or lower, or 140 °C or lower.

[0335] As the inorganic insulating film 125f, it is preferable to form an insulating film having a thickness of 3 nm or more, 5 nm or more, or 10 nm or more and 200 nm or less, 150 nm or less, 100 nm or less, or 50 nm or less within the above substrate temperature range.

[0336] The inorganic insulating film 125f is preferably formed by, for example, the ALD method. By using the ALD method, deposition damage can be reduced and a film with high coverage can be deposited, so it is preferable. As the inorganic insulating film 125f, it is preferable to form an aluminum oxide film by the ALD method, for example.

[0337] In addition, the inorganic insulating film 125f can also be formed by a sputtering method, a CVD method, or a PECVD method having a deposition rate higher than that of the ALD method. Thereby, a display device with high reliability can be manufactured with high productivity.

[0338] The insulating film 127f is preferably formed by the above wet deposition method. The insulating film 127f is preferably formed by a spin coating method using a photosensitive material, and more specifically, preferably formed using a photosensitive resin composition containing an acrylic resin.

[0339] For example, it is preferable to form the insulating film 127f using a resin composition containing a polymer, an acid generator, and a solvent. The polymer is formed using one or more monomers and has a structure in which one or more structural units (also referred to as constituent units) are repeated regularly or irregularly. As the acid generator, one or both of a compound that generates an acid by irradiating light and a compound that generates an acid by heating can be used. The resin composition may further contain one or more of a photosensitizer, a sensitizer, a catalyst, an adhesion aid, a surfactant, and an antioxidant.

[0340] In addition, it is preferable to perform a heat treatment (also referred to as pre-baking) after forming the insulating film 127f. This heat treatment is performed at a temperature lower than the heat-resistant temperatures of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. The substrate temperature during the heat treatment is preferably 50°C or more and 200°C or less, more preferably 60°C or more and 150°C or less, and further preferably 70°C or more and 120°C or less. Thereby, the solvent in the insulating film 127f can be removed.

[0341] Next, exposure is performed to expose a part of the insulating film 127f with visible light or ultraviolet light. Here, when a positive photosensitive resin composition containing an acrylic resin is used for the insulating film 127f, visible light or ultraviolet light is irradiated onto the region where the insulating layer 127 will not be formed in the subsequent process. The insulating layer 127 is formed in the region sandwiched by any two of the conductive layers 152R, 152G, and 152B and around the conductive layer 152C. Therefore, visible light or ultraviolet light is irradiated onto the conductive layers 152R, 152G, 152B, and the conductive layer 152C. Note that when a negative photosensitive material is used for the insulating film 127f, visible light or ultraviolet light is irradiated onto the region where the insulating layer 127 will be formed.

[0342] By means of the exposed region of the insulating film 127f, the width of the insulating layer 127 to be formed later can be controlled. In the present embodiment, processing is performed such that the insulating layer 127 has a portion overlapping with the top surface of the conductive layer 151.

[0343] The light used for exposure preferably has an i-line (wavelength 365 nm). In addition, the light used for exposure may also have at least one of a g-line (wavelength 436 nm) and an h-line (wavelength 405 nm).

[0344] Here, by providing an oxygen barrier insulating layer (such as an alumina film, etc.) as one or both of the sacrificial layer 158 (sacrificial layer 158R, sacrificial layer 158G, and sacrificial layer 158B) and the inorganic insulating film 125f, oxygen diffusion into the organic compound layers 103R, 103G, and 103B can be suppressed. When light (visible light or ultraviolet light) is irradiated onto the organic compound layer, sometimes the organic compounds contained in the organic compound layer become excited states and promote reactions with oxygen in the atmosphere. Specifically, when light (visible light or ultraviolet light) is irradiated onto the organic compound layer in an oxygen-containing atmosphere, oxygen may bond to the organic compounds contained in the organic compound layer. By providing the sacrificial layer 158 and the inorganic insulating film 125f on the island-shaped organic compound layer, oxygen in the atmosphere bonding to the organic compounds contained in the organic compound layer can be suppressed.

[0345] Next, as Figure 9A shown, development is performed to remove the exposed region in the insulating film 127f to form the insulating layer 127a. The insulating layer 127a is formed in the region sandwiched by any two of the conductive layers 152R, 152G, and 152B and in the region surrounding the conductive layer 152C. Here, when an acrylic resin is used for the insulating film 127f, an alkaline solution such as TMAH can be used as the developer.

[0346] Next, the residue from development (so-called scum) may be removed. For example, the residue may be removed by ashing using oxygen plasma.

[0347] In addition, etching may be performed to adjust the height of the surface of the insulating layer 127a. The insulating layer 127a may also be processed by, for example, ashing using oxygen plasma. In addition, when a non-photosensitive material is used as the insulating film 127f, the surface height of the insulating film 127f may also be adjusted by, for example, ashing.

[0348] Next, if Figure 9B As shown in FIG. 1 , the insulating layer 127a is used as a mask to perform etching to remove a portion of the inorganic insulating film 125f, thereby reducing the thickness of a portion of the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B. As a result, the inorganic insulating layer 125 is formed under the insulating layer 127a. In addition, the surface of the thinner portion of the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B is exposed. Hereinafter, the etching process using the insulating layer 127a as a mask is sometimes referred to as the first etching process.

[0349] The first etching process can be performed by dry etching or wet etching. When the inorganic insulating film 125f is deposited using the same material as the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B, the first etching process can be performed at one time, which is preferred.

[0350] By using the insulating layer 127a having a tapered side as a mask for etching, the side surface of the inorganic insulating layer 125 and the upper end portions of the side surfaces of the sacrificial layers 158R, 158G, and 158B can be easily tapered.

[0351] When dry etching is performed, it is preferred to use a chlorine-based gas. As a chlorine-based gas, Cl 2 、BCl 3 、SiCl 4 and CCl 4 One gas or a mixture of two or more of the above gases. In addition, one gas or a mixture of two or more of oxygen gas, hydrogen gas, helium gas, argon gas, etc. can be appropriately added to the above chlorine gas. By using dry etching, the thin thickness areas of the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B can be formed with excellent in-plane uniformity.

[0352] ​​​​As a dry etching device, a dry etching device having a high-density plasma source can be used. For example, as a dry etching device having a high-density plasma source, an inductively coupled plasma (ICP: Inductively Coupled Plasma) etching device or the like can be used. Alternatively, a capacitively coupled plasma (CCP: Capacitively Coupled Plasma) etching device including parallel plate electrodes can be used. A capacitively coupled plasma etching device including parallel plate electrodes can also adopt a structure in which a high-frequency voltage is applied to one of the parallel plate electrodes. Alternatively, a structure in which multiple different high-frequency voltages are applied to one of the parallel plate electrodes can also be adopted. Alternatively, a structure in which a high-frequency voltage of the same frequency is applied to each of the parallel plate electrodes can also be adopted. Alternatively, a structure in which high-frequency voltages of different frequencies are applied to each of the parallel plate electrodes can also be adopted.

[0353] In addition, when dry etching is performed, byproducts generated during dry etching may be deposited on the top and side surfaces of the insulating layer 127a. As a result, components in the etching gas, components in the inorganic insulating film 125f, components in the sacrificial layer 158R, sacrificial layer 158G, and sacrificial layer 158B may be included in the insulating layer 127 after the display device is completed.

[0354] In addition, it is preferable to perform the first etching process by wet etching. By using the wet etching method, the damage to the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B can be further reduced compared with the case of using the dry etching method. For example, wet etching can be performed using an alkaline solution. For example, TMAH, an alkaline solution, can be used in the wet etching of the aluminum oxide film. In this case, wet etching can be performed in a glue coating manner. When the inorganic insulating film 125f is deposited using the same material as the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B, the above-mentioned etching process can be performed at one time, so it is preferable.

[0355] In the first etching process, the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B are not completely removed, and the etching process is stopped in a state of reduced thickness. In this way, by leaving the corresponding sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B on the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B, it is possible to prevent the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B from being damaged in the subsequent process.

[0356] Next, the entire substrate is preferably exposed to visible light or ultraviolet light to irradiate the insulating layer 127a. The energy density of the exposure is preferably higher than 0 mJ / cm 2 and 800mJ / cm2 Hereinafter, it is more preferably higher than 0 mJ / cm 2 and is 500 mJ / cm or less. By performing such exposure after development, the transparency of the insulating layer 127a can sometimes be improved. In addition, sometimes the substrate temperature required for the heat treatment for deforming the insulating layer 127a into a tapered shape in the subsequent process can be reduced. 2 Here, by providing an oxygen barrier insulating layer (such as an alumina film or the like) as the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B, oxygen diffusion into the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B can be suppressed. When light (visible light or ultraviolet light) is irradiated onto the organic compound layer, sometimes the organic compounds contained in the organic compound layer become excited states and promote reactions with oxygen in the atmosphere. Specifically, when light (visible light or ultraviolet light) is irradiated onto the organic compound layer in an oxygen-containing atmosphere, oxygen may bond to the organic compounds contained in the organic compound layer. By providing the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B on the island-shaped organic compound layer, oxygen in the atmosphere can be suppressed from bonding to the organic compounds contained in the organic compound layer.

[0357] Next, a heat treatment (also referred to as post-baking) is performed. By performing the heat treatment, the insulating layer 127a can be deformed into an insulating layer 127 ([[]]

[0358] ) having a tapered shape on its side surface. This heat treatment is performed at a temperature lower than the heat-resistant temperature of the organic compound layer. The heat treatment can be performed at a substrate temperature of 50°C or higher and 200°C or lower, preferably 60°C or higher and 150°C or lower, and more preferably 70°C or higher and 130°C or lower. The heating atmosphere can be either an air atmosphere or an inert gas. In addition, the heating atmosphere can be either an air atmosphere or a reduced-pressure atmosphere. In the heat treatment of this step, it is preferable to increase the substrate temperature compared to the heat treatment (pre-baking) after forming the insulating film 127f. Thereby, the adhesion between the insulating layer 127 and the inorganic insulating layer 125 can be improved, and the corrosion resistance of the insulating layer 127 can also be improved. Figure 9C ) having a tapered shape on its side surface. This heat treatment is performed at a temperature lower than the heat-resistant temperature of the organic compound layer. The heat treatment can be performed at a substrate temperature of 50°C or higher and 200°C or lower, preferably 60°C or higher and 150°C or lower, and more preferably 70°C or higher and 130°C or lower. The heating atmosphere can be either an air atmosphere or an inert gas. In addition, the heating atmosphere can be either an air atmosphere or a reduced-pressure atmosphere. In the heat treatment of this step, it is preferable to increase the substrate temperature compared to the heat treatment (pre-baking) after forming the insulating film 127f. Thereby, the adhesion between the insulating layer 127 and the inorganic insulating layer 125 can be improved, and the corrosion resistance of the insulating layer 127 can also be improved.

[0359] In the first etching treatment, by not completely removing the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B and leaving the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B in a state where the thickness is thinned, damage and deterioration of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B can be prevented during this heat treatment. Thereby, the reliability of the light-emitting device can be improved.

[0360] Note that depending on the material of the insulating layer 127 and the temperature, time, and atmosphere of the post-baking, a concave curved surface shape is sometimes formed on the side surface of the insulating layer 127. For example, the higher the temperature or the longer the time in the post-baking conditions, the more likely the shape of the insulating layer 127 is to change, and thus a concave curved surface shape is sometimes formed.

[0361] Next, as Figure 10A shown, an etching process is performed using the insulating layer 127 as a mask to remove a part of the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B. Note that a part of the inorganic insulating layer 125 is sometimes also removed. Thereby, openings are respectively formed in the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B, and the top surfaces of the organic compound layer 103R, the organic compound layer 103G, the organic compound layer 103B, and the conductive layer 152C are exposed. Hereinafter, the etching process using the insulating layer 127 as a mask is sometimes referred to as the second etching process.

[0362] The end portion of the inorganic insulating layer 125 is covered by the insulating layer 127. In addition, Figure 10A an example is shown in which a part of the end portion of the sacrificial layer 158G (specifically, the conical-shaped part formed by the first etching process) is covered by the insulating layer 127 and the conical-shaped part formed by the second etching process is exposed.

[0363] When the first etching process is not performed and the inorganic insulating layer 125 and the sacrificial layer are etched at once after the post-baking, voids are sometimes formed due to side etching, causing the inorganic insulating layer 125 and the sacrificial layer under the end portion of the insulating layer 127 to disappear. Due to these voids, irregularities are generated on the surface where the common electrode 155 is formed, and disconnection is likely to occur in the common electrode 155. Even if the inorganic insulating layer 125 and the sacrificial layer are side-etched to form voids after the first etching process, these voids can be filled by the insulating layer 127 through the subsequent post-baking. Then, in the second etching process, the sacrificial layer with a further reduced thickness is etched, so the amount of side etching is less, voids are not easily formed, and the voids that can be formed can also be extremely small. Therefore, the surface where the common electrode 155 is formed can be made flatter.

[0364] The insulating layer 127 may also cover the entire end portion of the sacrificial layer 158G. For example, the end portion of the insulating layer 127 sometimes droops to cover the end portion of the sacrificial layer 158G. In addition, for example, the end portion of the insulating layer 127 sometimes contacts the top surface of at least one of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. As described above, the shape of the insulating layer 127 is sometimes likely to change without exposing the insulating layer 127a after development to light.

[0365] The second etching process is performed using wet etching. By using the wet etching method, damage to the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B can be reduced compared to the case of using the dry etching method. The wet etching can be performed using an alkaline solution such as TMAH.

[0366] On the other hand, when the second etching process is performed using the wet etching method, if there are gaps at the interfaces between the organic compound layer 103 and the sacrificial layer 158, between the organic compound layer 103 and the inorganic insulating layer 125, and between the organic compound layer 103 and the insulating layer 175 due to problems such as the adhesion between the organic compound layer 103 and other layers, the chemical solution used in the second etching process sometimes enters these gaps and contacts the pixel electrode. Here, when the chemical solution contacts both the conductive layer 151 and the conductive layer 152, sometimes the conductive layer with the lower natural potential of the conductive layer 151 and the conductive layer 152 corrodes due to galvanic corrosion. For example, when aluminum is used as the conductive layer 151 and indium tin oxide is used as the conductive layer 152, sometimes the conductive layer 152 corrodes. As a result, the yield of the display device sometimes decreases. In addition, the reliability of the display device sometimes decreases.

[0367] As described above, by forming the insulating layer 156 so as to cover the sides of the conductive layer 151 and the conductive layer 152, disconnection of the inorganic insulating layer 125 can be prevented. Therefore, for example, it is possible to prevent the chemical solution from contacting the underlying structure such as the conductive layer 151 during the second etching process. Thereby, corrosion of the pixel electrode can be prevented.

[0368] As described above, by providing the insulating layer 127, the inorganic insulating layer 125, the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B, between each light-emitting device, poor connection due to disconnection portions and resistance increase due to locally thin portions in the common electrode 155 can be suppressed. Thereby, the display device according to one embodiment of the present invention can improve the display quality.

[0369] In addition, a heat treatment may also be performed after a part of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B is exposed. By this heat treatment, water contained in each organic compound layer and water adsorbed on the surface of each organic compound layer can be removed. In addition, the shape of the insulating layer 127 sometimes changes due to this heat treatment. Specifically, the insulating layer 127 sometimes expands so as to cover at least one of the end portions of the inorganic insulating layer 125, the end portions of the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B, and the top surfaces of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B.

[0370] When the temperature of the heat treatment is too low, water contained in each organic compound layer and water adsorbed on the surface of each organic compound layer cannot be removed. In addition, when the temperature of the heat treatment is too high, deterioration of the organic compound layer 103 and excessive change in the shape of the insulating layer 127 may occur. Therefore, the heat treatment temperature is preferably higher than the temperature at which water dissociates from the organic compound layer 103 and lower than the glass transition temperature of the organic compound contained in the organic compound layer 103, and more preferably lower than the glass transition temperature of the organic compound contained in the top surface of the organic compound layer 103. Specifically, the substrate temperature is preferably 80°C or higher and 130°C or lower, more preferably 90°C or higher and 120°C or lower, further preferably 100°C or higher and 120°C or lower, and still further preferably 100°C or higher and 110°C or lower. The heating atmosphere may be an atmospheric atmosphere or an inert gas. Note that the heating atmosphere may be an atmospheric pressure atmosphere or a reduced pressure atmosphere, and a reduced pressure atmosphere is preferably used to prevent re-adsorption of the water dissociated from the organic compound layer 103.

[0371] Through this heat treatment, water contained in each organic compound layer, water adsorbed on the surface of each organic compound layer, etc. can be sufficiently removed without deterioration of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B and excessive change in the shape of the insulating layer 127. Thereby, deterioration of the characteristics of the light-emitting device can be prevented.

[0372] Next, as Figure 10B shown, a common layer 104 and a common electrode 155 are formed on the organic compound layer 103R, the organic compound layer 103G, the organic compound layer 103B, the conductive layer 152C, and the insulating layer 127. The common layer 104 and the common electrode 155 can be formed by a method such as a sputtering method or a vacuum evaporation method. Alternatively, the common layer 104 can be formed by an evaporation method and the common electrode 155 can be formed by a sputtering method.

[0373] Next, as Figure 10C shown, a protective layer 131 is formed on the common electrode 155. The protective layer 131 can be formed by a method such as a vacuum evaporation method, a sputtering method, a CVD method, or an ALD method.

[0374] Next, the substrate 120 is bonded to the protective layer 131 using the resin layer 122, whereby a display device can be manufactured. As described above, in the method for manufacturing a display device according to one embodiment of the present invention, the insulating layer 156 is provided on the sides of the conductive layer 151 and the conductive layer 152. Thereby, the yield of the display device can be improved and the occurrence of defects can be suppressed.

[0375] As described above, in the method for manufacturing a display device according to one embodiment of the present invention, the island-shaped organic compound layer 103R, the island-shaped organic compound layer 103G, and the island-shaped organic compound layer 103B are not formed using a high-precision metal mask but are formed by processing after depositing a film on one surface. Therefore, the island-shaped layers can be formed with a uniform thickness. Moreover, a high-definition display device or a display device with a high aperture ratio can be realized. In addition, even when the definition or aperture ratio is high and the distance between sub-pixels is extremely short, it is possible to suppress the contact between the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B in adjacent sub-pixels. Therefore, it is possible to suppress the occurrence of leakage current between sub-pixels. As a result, crosstalk can be prevented and a display device with an extremely high contrast ratio can be realized. In addition, a display device that can have good characteristics even when including a tandem light-emitting device manufactured by lithography can be provided.

[0376] The structure of the present embodiment can be used in appropriate combination with the structures of other embodiments.

[0377] Embodiment 4 In the present embodiment, with reference to Figures 11A to 11G and Figures 12A to 12I a light-emitting device according to one embodiment of the present invention will be described.

[0378] [Layout of pixels] In the present embodiment, a pixel layout different from Figure 3A and Figure 3B will be mainly described. The arrangement of sub-pixels is not particularly limited, and various arrangement methods can be adopted. As the arrangement of sub-pixels, for example, stripe arrangement, S-stripe arrangement, matrix arrangement, delta arrangement, Bayer arrangement, and Pentile arrangement can be cited.

[0379] In the present embodiment, the top surface shape of the sub-pixels shown in the drawings corresponds to the top surface shape of the light-emitting region.

[0380] In addition, as the top surface shape of the sub-pixels, for example, polygons such as triangles, quadrangles (including rectangles, squares), pentagons, etc., the above-mentioned polygonal shapes with rounded corners, ellipses, or circles can be cited.

[0381] In addition, the circuit layout constituting the sub-pixels is not limited to the range of the sub-pixels shown in the drawings, and can also be arranged outside thereof.

[0382] Figure 11A The pixel 178 shown adopts an S-stripe arrangement. Figure 11A The pixel 178 shown is composed of three sub-pixels: a sub-pixel 110R, a sub-pixel 110G, and a sub-pixel 110B.

[0383] Figure 11BThe pixel 178 shown includes a sub-pixel 110R having a top surface shape of an approximate trapezoid or an approximate triangle with rounded corners, a sub-pixel 110G having a top surface shape of an approximate trapezoid or an approximate triangle with rounded corners, and a sub-pixel 110B having a top surface shape of an approximate quadrilateral or an approximate hexagon with rounded corners. Additionally, the light-emitting area of the sub-pixel 110R is larger than that of the sub-pixel 110G. Thus, the shapes and sizes of the respective sub-pixels can be determined independently. For example, the size of a sub-pixel including a highly reliable light-emitting device can be smaller.

[0384] Figure 11C The pixels 124a and 124b shown adopt a Pentile arrangement. In Figure 11C the example shown, pixels 124a including sub-pixels 110R and sub-pixels 110G and pixels 124b including sub-pixels 110G and sub-pixels 110B are alternately arranged.

[0385] Figures 11D to 11F The pixels 124a and 124b shown adopt a Delta arrangement. Pixel 124a includes two sub-pixels (sub-pixels 110R and sub-pixels 110G) in the upper row (the first row) and one sub-pixel (sub-pixel 110B) in the lower row (the second row). Pixel 124b includes one sub-pixel (sub-pixel 110B) in the upper row (the first row) and two sub-pixels (sub-pixels 110R and sub-pixels 110G) in the lower row (the second row).

[0386] Figure 11D An example is shown where each sub-pixel has a top surface shape of an approximate quadrilateral with rounded corners, Figure 11E an example is shown where each sub-pixel has a circular top surface shape, Figure 11F an example is shown where each sub-pixel has a top surface shape of an approximate hexagon with rounded corners.

[0387] In Figure 11F each sub-pixel is arranged inside a closely arranged hexagonal region. Each sub-pixel is arranged in such a way that when focusing on one sub-pixel, it is surrounded by six sub-pixels. In addition, it is arranged such that sub-pixels emitting light of the same color are not adjacent. For example, each sub-pixel is arranged in such a way that when focusing on the sub-pixel 110R, it is surrounded by three sub-pixels 110G and three sub-pixels 110B that are alternately arranged.

[0388] Figure 11G An example is shown where sub-pixels of each color are arranged in a zigzag shape. Specifically, when viewed from above, the positions of the upper sides of two sub-pixels arranged in the row direction (for example, sub-pixel 110R and sub-pixel 110G or sub-pixel 110G and sub-pixel 110B) are offset.

[0389] In Figures 11A to 11GAmong the pixels shown, for example, it is preferable that the sub-pixel 110R is a sub-pixel R that emits red light, the sub-pixel 110G is a sub-pixel G that emits green light, and the sub-pixel 110B is a sub-pixel B that emits blue light. Note that the structure of the sub-pixels is not limited to this, and the colors presented by the sub-pixels and their arrangement order can be appropriately determined. For example, the sub-pixel 110G can be set as the sub-pixel R that emits red light, and the sub-pixel 110R can be set as the sub-pixel G that emits green light.

[0390] In photolithography, the finer the pattern to be processed, the more the influence of light diffraction cannot be ignored. Therefore, when transferring the pattern of the photomask through exposure, the fidelity deteriorates, and it is difficult to process the resist mask into the desired shape. Therefore, even if the pattern of the photomask is rectangular, it is easy to form a pattern with rounded corners. Therefore, the top surface shape of the sub-pixels sometimes takes a polygonal shape with rounded corners, an oval shape, or a circular shape, etc.

[0391] Moreover, in the manufacturing method of a light-emitting device according to one embodiment of the present invention, the organic compound layer is processed into an island shape using a resist mask. The resist film formed on the organic compound layer needs to be cured at a temperature lower than the heat-resistant temperature of the organic compound layer. Therefore, depending on the heat-resistant temperature of the material of the organic compound layer and the curing temperature of the resist material, the curing of the resist film may sometimes be insufficient. An insufficiently cured resist film may sometimes take a shape that deviates from the desired shape when being processed. As a result, the top surface shape of the organic compound layer sometimes takes a polygonal shape with rounded corners, an oval shape, or a circular shape, etc. For example, when a resist mask with a square top surface shape is to be formed, a resist mask with a circular top surface shape may sometimes be formed and the top surface shape of the organic compound layer is circular.

[0392] In order to make the top surface shape of the organic compound layer take the desired shape, a technique of pre-correcting the mask pattern in such a way that the designed pattern and the transferred pattern are consistent (OPC (Optical Proximity Correction) technique) can also be used. Specifically, in the OPC technique, for example, correction patterns are added to the graphic corners on the mask pattern.

[0393] As Figures 12A to 12I shown, a pixel can include four types of sub-pixels.

[0394] Figures 12A to 12C The pixel 178 shown adopts a stripe arrangement.

[0395] Figure 12A An example showing that each sub-pixel has a rectangular top surface shape is Figure 12B An example showing that each sub-pixel has a top surface shape connecting two semi-circles and a rectangle is Figure 12C An example showing that each sub-pixel has an oval top surface shape is

[0396] Figures 12D to 12F The pixels 178 shown are arranged in a matrix.

[0397] Figure 12D An example is shown in which each sub-pixel has a square top surface shape. Figure 12E An example is shown in which each sub-pixel has an approximately square top surface shape with rounded corners. Figure 12F An example is shown in which each sub-pixel has a circular top surface shape.

[0398] Figure 12G and Figure 12H An example is shown in which one pixel 178 is composed of two rows and three columns.

[0399] Figure 12G The pixel 178 shown includes three sub-pixels (sub-pixel 110R, sub-pixel 110G, sub-pixel 110B) in the upper row (the first row) and one sub-pixel (sub-pixel 110W) in the lower row (the second row). In other words, the pixel 178 includes sub-pixel 110R in the left column (the first column), sub-pixel 110G in the central column (the second column), sub-pixel 110B in the right column (the third column), and sub-pixel 110W straddling these three columns.

[0400] Figure 12H The pixel 178 shown includes three sub-pixels (sub-pixel 110R, sub-pixel 110G, sub-pixel 110B) in the upper row (the first row) and three sub-pixels 110W in the lower row (the second row). In other words, the pixel 178 includes sub-pixel 110R and sub-pixel 110W in the left column (the first column), sub-pixel 110G and sub-pixel 110W in the central column (the second column), and sub-pixel 110B and sub-pixel 110W in the right column (the third column). As Figure 12H shown, by making the configurations of the sub-pixels in the upper and lower rows consistent, for example, dust that may be generated in the manufacturing process can be efficiently removed. Thereby, a light-emitting device with high display quality can be provided.

[0401] In Figure 12G and Figure 12H In the pixel 178 shown, the sub-pixels 110R, 110G, and 110B are arranged in a stripe pattern, so the display quality can be improved.

[0402] Figure 12I An example is shown in which one pixel 178 is composed of three rows and two columns.

[0403] Figure 12IThe pixel 178 shown includes sub-pixel 110R in the upper row (first row), sub-pixel 110G in the central row (second row), sub-pixel 110B spanning the first row to the second row, and one sub-pixel (sub-pixel 110W) in the lower row (third row). In other words, the pixel 178 includes sub-pixel 110R and sub-pixel 110G in the left column (first column), sub-pixel 110B in the right column (second column), and sub-pixel 110W spanning these two columns.

[0404] In Figure 12I In the pixel 178 shown, the layout of sub-pixel 110R, sub-pixel 110G, and sub-pixel 110B is a so-called S stripe arrangement, so the display quality can be improved.

[0405] Figures 12A to 12I The pixel 178 shown is composed of four sub-pixels: sub-pixel 110R, sub-pixel 110G, sub-pixel 110B, and sub-pixel 110W. For example, sub-pixel 110R can be set as a sub-pixel that emits red light, sub-pixel 110G can be set as a sub-pixel that emits green light, sub-pixel 110B can be set as a sub-pixel that emits blue light, and sub-pixel 110W can be set as a sub-pixel that emits white light. In addition, at least one of sub-pixel 110R, sub-pixel 110G, sub-pixel 110B, and sub-pixel 110W can be set as a sub-pixel that emits cyan light, magenta light, yellow light, or near-infrared light.

[0406] As described above, in a light-emitting device according to one aspect of the present invention, various layouts can be adopted for pixels composed of sub-pixels including light-emitting devices.

[0407] This embodiment can be appropriately combined with other embodiments or examples. In addition, in this specification, when multiple structural examples are shown in one embodiment, these structural examples can be appropriately combined.

[0408] Embodiment 5 In this embodiment, a light-emitting device according to one aspect of the present invention will be described.

[0409] The light-emitting device of this embodiment can be a high-definition light-emitting device. Therefore, for example, the light-emitting device of this embodiment can be used as a display unit of information terminal devices (wearable devices) such as watch-type and bracelet-type devices, and as a display unit of wearable devices that can be worn on the head, such as VR devices like head-mounted displays (HMDs) and glasses-type AR devices.

[0410] In addition, the light-emitting device of the present embodiment can be a high-resolution light-emitting device or a large-sized light-emitting device. Therefore, for example, the light-emitting device of the present embodiment can be used as a display unit of the following devices: electronic devices with a large screen such as a television device, a desktop or notebook personal computer, a display for a computer, etc., a digital signage, and a large-sized game machine such as a pachinko machine; a digital camera; a digital video camera; a digital photo frame; a mobile phone; a portable game machine; a portable information terminal; and a sound reproduction device.

[0411] [Display module] Figure 13A A perspective view showing the display module 280 is shown. The display module 280 includes a light-emitting device 100A and an FPC 290. Note that the light-emitting device included in the display module 280 is not limited to the light-emitting device 100A, and may be any one of the light-emitting device 100B, the light-emitting device 100H, the light-emitting device 100H2, the light-emitting device 100C, and the light-emitting device 100C2 to be described later.

[0412] The display module 280 includes a substrate 291 and a substrate 292. The display module 280 includes a display unit 281. The display unit 281 is an image display area in the display module 280, and light from each pixel provided in the following pixel unit 284 can be seen.

[0413] Figure 13B It is a perspective schematic view of the structure on the side of the substrate 291. A circuit unit 282 is laminated on the substrate 291, a pixel circuit unit 283 is laminated on the circuit unit 282, and a pixel unit 284 is laminated on the pixel circuit unit 283. In addition, a terminal unit 285 for connecting to the FPC 290 is provided on a portion of the substrate 291 that does not overlap with the pixel unit 284. The terminal unit 285 and the circuit unit 282 are electrically connected through a wiring unit 286 composed of a plurality of wirings.

[0414] The pixel unit 284 includes a plurality of pixels 284a arranged periodically. Figure 13B An enlarged view of one pixel 284a is shown on the right side. The pixel 284a can adopt various structures described in the above embodiments. Figure 13B It shows that the pixel 284a has Figure 3A and Figure 3B an example of the same structure as the pixel 178 shown.

[0415] The pixel circuit unit 283 includes a plurality of pixel circuits 283a arranged periodically.

[0416] A pixel circuit 283a controls the driving of a plurality of elements included in a pixel 284a. Three circuits for controlling the light emission of a light-emitting device may be provided in a pixel circuit 283a. For example, the pixel circuit 283a may adopt a structure having at least one selection transistor, one current control transistor (driving transistor), and a capacitor for one light-emitting device. At this time, a gate signal is input to the gate of the selection transistor, and a video signal is input to the source or drain. Thereby, an active matrix light-emitting device is realized.

[0417] The circuit section 282 includes a circuit that drives each pixel circuit 283a of the pixel circuit section 283. For example, it preferably includes one or both of a gate line driving circuit and a source line driving circuit. In addition, it may also have at least one of an arithmetic circuit, a storage circuit, a power supply circuit, etc.

[0418] The FPC 290 serves as a wiring for supplying a video signal, a power supply potential, etc. from the outside to the circuit section 282. In addition, an IC may be mounted on the FPC 290.

[0419] The display module 280 may adopt a structure in which one or both of the pixel circuit section 283 and the circuit section 282 are laminated on the lower side of the pixel section 284, so the display section 281 can have an extremely high aperture ratio (effective display area ratio). For example, the aperture ratio of the display section 281 may be 40% or more and less than 100%, preferably 50% or more and 95% or less, more preferably 60% or more and 95% or less. In addition, the pixels 284a can be arranged with extremely high density, whereby the display section 281 can have extremely high clarity. For example, the display section 281 preferably arranges the pixels 284a with a clarity of 2000 ppi or more, more preferably 3000 ppi or more, further preferably 5000 ppi or more, still more preferably 6000 ppi or more and 20000 ppi or less or 30000 ppi or less.

[0420] Such a display module 280 has extremely high clarity, so it can be applied to VR devices such as HMDs or glasses-type AR devices. For example, because the display module 280 has a display section 281 with extremely high clarity, in the structure of viewing the display section of the display module 280 through a lens, even if the display section is magnified by the lens, the user cannot see the pixels, thereby realizing a display with a high sense of immersion. In addition, the display module 280 is not limited thereto and can also be applied to an electronic device having a relatively small display section. For example, it can be applied to the display section of a wearable electronic device such as a watch-type device.

[0421] [Light-emitting device 100A] Figure 14AThe light-emitting device 100A shown includes a substrate 301, a light-emitting device 130R, a light-emitting device 130G, a light-emitting device 130B, a capacitor 240, and a transistor 310.

[0422] The substrate 301 corresponds to Figure 13A and Figure 13B the substrate 291 in. The transistor 310 is a transistor having a channel formation region in the substrate 301. As the substrate 301, for example, a semiconductor substrate such as a single crystal silicon substrate can be used. The transistor 310 includes a part of the substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 is used as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and is used as a gate insulating layer. The low-resistance region 312 is a region in the substrate 301 doped with impurities and is used as a source or a drain. The insulating layer 314 covers the side surface of the conductive layer 311.

[0423] In addition, an element isolation layer 315 is provided in the substrate 301 in an embedded manner between two adjacent transistors 310.

[0424] In addition, an insulating layer 261 is provided to cover the transistor 310, and a capacitor 240 is provided on the insulating layer 261.

[0425] The capacitor 240 includes a conductive layer 241, a conductive layer 245, and an insulating layer 243 located between them. The conductive layer 241 serves as one electrode in the capacitor 240, the conductive layer 245 serves as the other electrode in the capacitor 240, and the insulating layer 243 serves as the dielectric of the capacitor 240.

[0426] The conductive layer 241 is provided on the insulating layer 261 and is embedded in the insulating layer 254. The conductive layer 241 is electrically connected to one of the source and drain of the transistor 310 through a plug 271 embedded in the insulating layer 261. The insulating layer 243 is provided to cover the conductive layer 241. The conductive layer 245 is provided in a region overlapping the conductive layer 241 with the insulating layer 243 interposed therebetween.

[0427] An insulating layer 255 is provided to cover the capacitor 240, an insulating layer 174 is provided on the insulating layer 255, and an insulating layer 175 is provided on the insulating layer 174. The light-emitting devices 130R, 130G, and 130B are provided on the insulating layer 175. Figure 14A The light-emitting devices 130R, 130G, and 130B are shown to have Figure 1A an example of a stacked structure as shown. An insulator is provided in the region between adjacent light-emitting devices. For example, in Figure 14A this, an inorganic insulating layer 125 and an insulating layer 127 on the inorganic insulating layer 125 are provided in this region.

[0428] An insulating layer 156R is provided to cover the sides of the conductive layer 151R and the conductive layer 152R included in the light-emitting device 130R, an insulating layer 156G is provided to cover the sides of the conductive layer 151G and the conductive layer 152G included in the light-emitting device 130G, and an insulating layer 156B is provided to cover the sides of the conductive layer 151B and the conductive layer 152B included in the light-emitting device 130B. Furthermore, a sacrificial layer 158R is located on the organic compound layer 103R included in the light-emitting device 130R, a sacrificial layer 158G is located on the organic compound layer 103G included in the light-emitting device 130G, and a sacrificial layer 158B is located on the organic compound layer 103B included in the light-emitting device 130B.

[0429] The conductive layer 151R, the conductive layer 151G, and the conductive layer 151B are electrically connected to one of the source and drain of the transistor 310 through plugs 256 embedded in the insulating layers 243, 255, 174, and 175, a conductive layer 241 embedded in the insulating layer 254, and a plug 271 embedded in the insulating layer 261. The height of the top surface of the insulating layer 175 is the same as or substantially the same as the height of the top surface of the plug 256. The plug can use various conductive materials.

[0430] In addition, a protective layer 131 is provided on the light-emitting device 130R, the light-emitting device 130G, and the light-emitting device 130B. A substrate 120 is bonded to the protective layer 131 by a resin layer 122. Details of the components from the light-emitting device 130 to the substrate 120 can be referred to in Embodiment 3. The substrate 120 corresponds to Figure 13A the substrate 292.

[0431] Figure 14B shows Figure 14A a modified example of the light-emitting device 100A shown. Figure 14B The light-emitting device shown includes a coloring layer 132R, a coloring layer 132G, and a coloring layer 132B, and the light-emitting device 130 has an area overlapping one of the coloring layer 132R, the coloring layer 132G, and the coloring layer 132B. In Figure 14B the light-emitting device shown, the light-emitting device 130 can emit white light, for example. In addition, for example, the coloring layer 132R, the coloring layer 132G, and the coloring layer 132B can transmit red light, green light, and blue light, respectively.

[0432] [Light-emitting device 100B] Figure 15 A perspective view of the light-emitting device 100B is shown, Figure 16A and a cross-sectional view of the light-emitting device 100B is shown.

[0433] The light-emitting device 100B has a structure in which the bonding substrate 352 and the substrate 351 are bonded. In Figure 15 the substrate 352 is indicated by a dashed line.

[0434] The light-emitting device 100B includes a pixel portion 177, a connection portion 140, a circuit 356, a wiring 355, and the like. Figure 15 An example is shown in which the light-emitting device 100B is mounted with an IC (integrated circuit) 354 and an FPC 353. Therefore, the Figure 15 structure shown can also be referred to as a display module including the light-emitting device 100B, the IC, and the FPC. Here, the substrate of the light-emitting device on which a connector such as an FPC is mounted or the substrate on which the IC is mounted is referred to as a display module.

[0435] The connection portion 140 is provided outside the pixel portion 177. The connection portion 140 can be provided along one or more sides of the pixel portion 177. The number of connection portions 140 can also be one or more. Figure 15 An example is shown in which the connection portion 140 is provided so as to surround the four sides of the pixel portion 177. In the connection portion 140, the common electrode of the light-emitting device is electrically connected to the conductive layer, and a potential can be supplied to the common electrode.

[0436] As the circuit 356, for example, a scan line driving circuit can be used.

[0437] The wiring 355 has a function of supplying signals and power to the pixel portion 177 and the circuit 356. The signals and power are input to the wiring 355 from the outside via the FPC 353 or input to the wiring 355 from the IC 354.

[0438] Figure 15 An example is shown in which the IC 354 is provided on the substrate 351 by a COG (Chip On Glass) method or a COF (Chip On Film) method or the like. As the IC 354, for example, an IC including a scan line driving circuit or a signal line driving circuit or the like can be used. Note that the light-emitting device 100B and the display module do not necessarily have to be provided with an IC. In addition, for example, the IC can be mounted on the FPC by the COF method.

[0439] Figure 16A An example of a cross-section of a part of the region including the FPC 353, a part of the circuit 356, a part of the pixel portion 177, a part of the connection portion 140, and a part of the region including the end portion of the light-emitting device 100B is shown.

[0440] Figure 16AThe light-emitting device 100B shown includes a transistor 201, a transistor 205, a light-emitting device 130R that emits red light, a light-emitting device 130G that emits green light, a light-emitting device 130B that emits blue light, etc. between a substrate 351 and a substrate 352.

[0441] Except for the difference in the structure of the pixel electrode, the light-emitting devices 130R, 130G, and 130B all have Figure 1A the stacked structure shown. For the details of the light-emitting device, reference can be made to the above-described embodiment.

[0442] The light-emitting device 130R includes a conductive layer 224R, a conductive layer 151R on the conductive layer 224R, and a conductive layer 152R on the conductive layer 151R. The light-emitting device 130G includes a conductive layer 224G, a conductive layer 151G on the conductive layer 224G, and a conductive layer 152G on the conductive layer 151G. The light-emitting device 130B includes a conductive layer 224B, a conductive layer 151B on the conductive layer 224B, and a conductive layer 152B on the conductive layer 151B. Here, the conductive layer 224R, the conductive layer 151R, and the conductive layer 152R can be collectively referred to as the pixel electrode of the light-emitting device 130R, and the conductive layer 151R and the conductive layer 152R except the conductive layer 224R can also be referred to as the pixel electrode of the light-emitting device 130R. Similarly, the conductive layer 224G, the conductive layer 151G, and the conductive layer 152G can be collectively referred to as the pixel electrode of the light-emitting device 130G, and the conductive layer 151G and the conductive layer 152G except the conductive layer 224G can also be referred to as the pixel electrode of the light-emitting device 130G. In addition, the conductive layer 224B, the conductive layer 151B, and the conductive layer 152B can be collectively referred to as the pixel electrode of the light-emitting device 130B, and the conductive layer 151B and the conductive layer 152B except the conductive layer 224B can also be referred to as the pixel electrode of the light-emitting device 130B.

[0443] The conductive layer 224R is connected to the conductive layer 222b included in the transistor 205 through an opening provided in the insulating layer 214. The end of the conductive layer 151R is located outside the end of the conductive layer 224R. An insulating layer 156R is provided in such a manner as to have a region in contact with the side surface of the conductive layer 151R, and a conductive layer 152R is provided to cover the conductive layer 151R and the insulating layer 156R.

[0444] The conductive layer 224G, the conductive layer 151G, the conductive layer 152G, the insulating layer 156G in the light-emitting device 130G, and the conductive layer 224B, the conductive layer 151B, the conductive layer 152B, the insulating layer 156B in the light-emitting device 130B are the same as the conductive layer 224R, the conductive layer 151R, the conductive layer 152R, the insulating layer 156R in the light-emitting device 130R, so the detailed description is omitted.

[0445] Recesses are formed in the conductive layers 224R, 224G, and 224B so as to cover the openings formed in the insulating layer 214. The layer 128 is embedded in the recesses.

[0446] The layer 128 has a function of planarizing the recesses of the conductive layers 224R, 224G, and 224B. The conductive layers 151R, 151G, and 151B that are electrically connected to the conductive layers 224R, 224G, and 224B are provided on the conductive layers 224R, 224G, 224B, and the layer 128. Therefore, the regions overlapping the recesses of the conductive layers 224R, 224G, and 224B can also be used as light-emitting regions, and the aperture ratio of the pixels can be increased.

[0447] The layer 128 can also be an insulating layer or a conductive layer. Various inorganic insulating materials, organic insulating materials, and conductive materials can be appropriately used for the layer 128. In particular, the layer 128 is preferably formed of an insulating material, and particularly preferably formed of an organic insulating material. For example, the organic insulating material that can be used for the insulating layer 127 described above can be used for the layer 128.

[0448] A protective layer 131 is provided on the light-emitting devices 130R, 130G, and 130B. The protective layer 131 and the substrate 352 are bonded by an adhesive layer 142. A light-shielding layer 157 is provided on the substrate 352. The light-emitting device 130 can be sealed by a solid-sealing structure or a hollow-sealing structure, etc. In Figure 16A this case, the space between the substrate 352 and the substrate 351 is filled with the adhesive layer 142, that is, a solid-sealing structure is adopted. Alternatively, the space can be filled with an inert gas (such as nitrogen or argon) to adopt a hollow-sealing structure. At this time, the adhesive layer 142 can also be provided so as not to overlap with the light-emitting device. In addition, the space can also be filled with a resin different from the adhesive layer 142 provided in a frame shape.

[0449] Figure 16A An example is shown in which the connection portion 140 includes a conductive layer 224C obtained by processing a conductive film the same as the conductive layers 224R, 224G, and 224B, a conductive layer 151C obtained by processing a conductive film the same as the conductive layers 151R, 151G, and 151B, and a conductive layer 152C obtained by processing a conductive film the same as the conductive layers 152R, 152G, and 152B. In addition, Figure 16A an example is shown in which the insulating layer 156C is provided so as to have a region overlapping the side surface of the conductive layer 151C.

[0450] The light-emitting device 100B is a top-emission type display device. The light-emitting element emits light to the side of the substrate 352. The substrate 352 is preferably made of a material with high visible light transmittance. The pixel electrode contains a material that reflects visible light, and the counter electrode (common electrode 155) contains a material that transmits visible light.

[0451] Both the transistor 201 and the transistor 205 are formed on the substrate 351. These transistors can be formed using the same material and the same process.

[0452] An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are sequentially provided on the substrate 351. A part of the insulating layer 211 serves as the gate insulating layer of each transistor. A part of the insulating layer 213 serves as the gate insulating layer of each transistor. The insulating layer 215 is provided so as to cover the transistors. The insulating layer 214 is provided so as to cover the transistors and serves as a planarization layer. In addition, there is no particular limitation on the number of gate insulating layers and the number of insulating layers covering the transistors, and they can be either one or two or more.

[0453] Preferably, a material in which impurities such as water and hydrogen do not easily diffuse is used for at least one of the insulating layers covering the transistors. Thus, the insulating layer can be used as a barrier layer. By adopting such a structure, it is possible to effectively suppress the diffusion of impurities from the outside into the transistors, thereby improving the reliability of the light-emitting device.

[0454] As the insulating layer 211, the insulating layer 213, and the insulating layer 215, an inorganic insulating film is preferably used. As the inorganic insulating film, for example, a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, or an aluminum nitride film can be used. In addition, a hafnium oxide film, a yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, and a neodymium oxide film can also be used. In addition, two or more of the above insulating films can be laminated.

[0455] The insulating layer 214 serving as the planarization layer is preferably an organic insulating layer. As the material that can be used for the organic insulating layer, acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimide amide resin, silicone resin, benzocyclobutene resin, phenolic resin, and precursors of the above resins can be cited. In addition, the insulating layer 214 can also have a laminated structure of an organic insulating layer and an inorganic insulating layer. The outermost surface layer of the insulating layer 214 is preferably used as an etching protection layer. Thus, when processing the conductive layer 224R, the conductive layer 151R, or the conductive layer 152R, etc., it is possible to suppress the formation of recesses in the insulating layer 214. Or, recesses can also be provided in the insulating layer 214 when processing the conductive layer 224R, the conductive layer 151R, or the conductive layer 152R, etc.

[0456] The transistor 201 and the transistor 205 include: a conductive layer 221 serving as a gate; an insulating layer 211 serving as a gate insulating layer; conductive layers 222a and 222b serving as a source and a drain; a semiconductor layer 231; an insulating layer 213 serving as a gate insulating layer; and a conductive layer 223 serving as a gate. Here, multiple layers obtained by processing the same conductive film are represented by the same hatching. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0457] There is no particular limitation on the transistor structure included in the light-emitting device of the present embodiment. For example, a planar transistor, a staggered transistor, an anti-staggered transistor, etc. can be adopted. In addition, the transistors can all have a top-gate structure or a bottom-gate structure. Alternatively, gates can also be provided above and below the semiconductor layer in which a channel is formed.

[0458] As the transistor 201 and the transistor 205, a structure in which a semiconductor layer forming a channel is clamped by two gates is adopted. In addition, the two gates can also be connected, and the transistor can be driven by supplying the same signal to the two gates. Alternatively, by applying a potential for controlling the threshold voltage to one of the two gates and a potential for driving to the other, the threshold voltage of the transistor can also be controlled.

[0459] There is also no particular limitation on the crystallinity of the semiconductor material used for the transistor, and an amorphous semiconductor, a semiconductor having crystallinity (microcrystalline semiconductor, polycrystalline semiconductor, single-crystalline semiconductor, or a semiconductor having a crystalline region in a part thereof) can be used. When a semiconductor having crystallinity is used, deterioration of the transistor characteristics can be suppressed, so it is preferable.

[0460] The semiconductor layer of the transistor preferably uses a metal oxide. That is, the light-emitting device of the present embodiment preferably uses a transistor (hereinafter, referred to as an OS transistor) including a metal oxide in a channel formation region.

[0461] Examples of the oxide semiconductor having crystallinity include CAAC (c-axis-aligned crystalline)-OS or nc (nanocrystalline)-OS.

[0462] Alternatively, a transistor (Si transistor) using silicon for a channel formation region can also be used. Examples of silicon include single-crystalline silicon, polycrystalline silicon, or amorphous silicon. In particular, a transistor in which a semiconductor layer contains low-temperature polycrystalline silicon (LTPS (Low Temperature Poly Silicon)) (hereinafter, also referred to as an LTPS transistor) can be used. The LTPS transistor has a high field-effect mobility and good frequency characteristics.

[0463] By using Si transistors such as LTPS transistors, circuits that need to be driven at high frequencies (for example, source driver circuits) and display units can be formed on the same substrate. Therefore, the external circuits mounted on the light-emitting device can be simplified, and the component cost and mounting cost can be reduced.

[0464] The field-effect mobility of an OS transistor is much higher than that of a transistor using amorphous silicon. In addition, the leakage current between the source and drain in the off state of the OS transistor (hereinafter, also referred to as the off-state current) is extremely low, and the charge stored in the capacitor connected in series with the transistor can be maintained for a long period. In addition, by using an OS transistor, the power consumption of the light-emitting device can be reduced.

[0465] In addition, when increasing the light-emitting luminance of the light-emitting device included in the pixel circuit, it is necessary to increase the amount of current flowing through the light-emitting device. For this purpose, it is necessary to increase the source-drain voltage of the driving transistor included in the pixel circuit. Since the breakdown voltage between the source and drain of the OS transistor is higher than that of the Si transistor, a high voltage can be applied between the source and drain of the OS transistor. Thus, by using an OS transistor as the driving transistor included in the pixel circuit, the amount of current flowing through the light-emitting device can be increased to increase the light-emitting luminance of the light-emitting device.

[0466] In addition, regarding the saturation characteristics of the current flowing when the transistor operates in the saturation region, compared with the Si transistor, the OS transistor can cause a stable current (saturation current) to flow even when gradually increasing the source-drain voltage. Therefore, by using the OS transistor as the driving transistor, even if, for example, the current-voltage characteristics of the light-emitting device are uneven, a stable current can flow through the light-emitting device. That is, when the OS transistor operates in the saturation region, even if the source-drain voltage is increased, the source-drain current hardly changes, so the light-emitting luminance of the light-emitting device can be stabilized.

[0467] As described above, by using an OS transistor as the driving transistor included in the pixel circuit, "suppression of black impurity", "increase in light-emitting luminance", "multi-gray scale", and "suppression of unevenness of light-emitting devices" can be achieved.

[0468] For example, the semiconductor layer preferably contains indium, M (M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium). In particular, M is preferably one or more selected from aluminum, gallium, yttrium, and tin.

[0469] In particular, as the semiconductor layer, an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also denoted as IGZO) is preferably used. Alternatively, an oxide containing indium, tin, and zinc is preferably used. Alternatively, an oxide containing indium, gallium, tin, and zinc is preferably used. Alternatively, an oxide containing indium (In), aluminum (Al), and zinc (Zn) (also referred to as IAZO) is preferably used. Alternatively, an oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) (also referred to as IAGZO) is preferably used.

[0470] When an In-M-Zn oxide is used for the semiconductor layer, the atomic ratio of In in the In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. Examples of the atomic ratios of the metal elements in such an In-M-Zn oxide include compositions such as In:M:Zn = 1:1:1 or in the vicinity thereof, In:M:Zn = 1:1:1.2 or in the vicinity thereof, In:M:Zn = 2:1:3 or in the vicinity thereof, In:M:Zn = 3:1:2 or in the vicinity thereof, In:M:Zn = 4:2:3 or in the vicinity thereof, In:M:Zn = 4:2:4.1 or in the vicinity thereof, In:M:Zn = 5:1:3 or in the vicinity thereof, In:M:Zn = 5:1:6 or in the vicinity thereof, In:M:Zn = 5:1:7 or in the vicinity thereof, In:M:Zn = 5:1:8 or in the vicinity thereof, In:M:Zn = 6:1:6 or in the vicinity thereof, In:M:Zn = 5:2:5 or in the vicinity thereof, etc. In addition, the vicinity of the composition includes a range of ±30% of the desired atomic ratio.

[0471] For example, when it is described that the atomic ratio is In:Ga:Zn = 4:2:3 or in the vicinity thereof, the following cases are included: when the atomic ratio of In is 4, the atomic ratio of Ga is 1 or more and 3 or less, and the atomic ratio of Zn is 2 or more and 4 or less. In addition, when it is described that the atomic ratio is In:Ga:Zn = 5:1:6 or in the vicinity thereof, the following cases are included: when the atomic ratio of In is 5, the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is 5 or more and 7 or less. In addition, when it is described that the atomic ratio is In:Ga:Zn = 1:1:1 or in the vicinity thereof, the following cases are included: when the atomic ratio of In is 1, the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is greater than 0.1 and 2 or less.

[0472] The transistors included in circuit 356 and the transistors included in pixel section 177 may have the same structure or may have different structures. The multiple transistors included in circuit 356 may have the same structure or may have two or more different structures. Similarly, the multiple transistors included in pixel section 177 may have the same structure or may have two or more different structures.

[0473] All the transistors included in pixel section 177 may be OS transistors, all the transistors included in pixel section 177 may be Si transistors, and some of the transistors included in pixel section 177 may be OS transistors and the remaining transistors may be Si transistors.

[0474] For example, by using both LTPS transistors and OS transistors in pixel section 177, a light-emitting device with low power consumption and high driving ability can be realized. In addition, the structure combining LTPS transistors and OS transistors is sometimes referred to as LTPO. Further, for example, it is preferable to use an OS transistor as the transistor for controlling conduction / non-conduction of control wirings and use an LTPS transistor as the transistor for controlling current.

[0475] For example, one of the transistors included in pixel section 177 that is used as the transistor for controlling the current flowing through the light-emitting device may be referred to as a driving transistor. One of the source and drain of the driving transistor is electrically connected to the pixel electrode of the light-emitting device. It is preferable to use an LTPS transistor for the driving transistor. Thereby, the current flowing through the light-emitting device in the pixel circuit can be increased.

[0476] On the other hand, another one of the transistors included in pixel section 177 that is used as the switch for controlling selection and non-selection of the pixel may also be referred to as a selection transistor. The gate of the selection transistor is electrically connected to the gate line, and one of the source and drain is electrically connected to the source line (signal line). It is preferable to use an OS transistor for the selection transistor. Thereby, since the gray level of the pixel can be maintained even when the frame frequency is extremely low (e.g., 1 fps or less), the power consumption can be reduced by stopping the driver when displaying a static image.

[0477] Thus, the light-emitting device according to one embodiment of the present invention can have both a high aperture ratio, high definition, high display quality, and low power consumption.

[0478] Note that a light-emitting device according to one embodiment of the present invention adopts a structure including an OS transistor and a light-emitting device having an MML (Metal MaskLess) structure. By adopting this structure, the leakage current that can flow through the transistor and the leakage current that can flow between adjacent light-emitting devices (sometimes referred to as lateral leakage current, horizontal leakage current, or transverse leakage current) can be made extremely low. In addition, by adopting the above structure, when an image is displayed on the light-emitting device, a viewer can observe one or more of the sharpness of the image, the sharpness of the image, high color saturation, and high contrast. In addition, by adopting a structure in which the leakage current flowing through the transistor and the horizontal leakage current between the light-emitting devices are extremely low, it is possible to perform a display with extremely little light leakage (so-called black impurity) that can occur when displaying black.

[0479] In particular, when the SBS (Side By Side) structure in which the light-emitting layer is separately formed or the light-emitting layer is separately coated is adopted in the light-emitting device having an MML structure, the layer provided between the light-emitting devices (for example, also referred to as an organic layer or a common layer commonly used in the light-emitting devices) is disconnected, whereby the side leakage current can be eliminated or made extremely small.

[0480] Figure 16B and Figure 16C Other structural examples of the transistor are shown.

[0481] The transistors 209 and 210 include: a conductive layer 221 serving as a gate; an insulating layer 211 serving as a gate insulating layer; a semiconductor layer 231 including a channel formation region 231i and a pair of low-resistance regions 231n; a conductive layer 222a connected to one of the pair of low-resistance regions 231n; a conductive layer 222b connected to the other of the pair of low-resistance regions 231n; an insulating layer 225 serving as a gate insulating layer; a conductive layer 223 serving as a gate; and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i. The insulating layer 225 is at least located between the conductive layer 223 and the channel formation region 231i. Furthermore, an insulating layer 218 covering the transistor may also be provided.

[0482] In Figure 16B In the example shown, in the transistor 209, the insulating layer 225 covers the top surface and the side surface of the semiconductor layer 231. The conductive layer 222a and the conductive layer 222b are connected to the low-resistance region 231n through openings provided in the insulating layer 225 and the insulating layer 215. One of the conductive layer 222a and the conductive layer 222b is used as a source electrode, and the other is used as a drain electrode.

[0483] On the other hand, in Figure 16CIn the transistor 210 shown, the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 but does not overlap with the low-resistance region 231n. For example, by processing the insulating layer 225 using the conductive layer 223 as a mask, the structure shown in Figure 16C can be formed. In Figure 16C , the insulating layer 215 covers the insulating layer 225 and the conductive layer 223, and the conductive layers 222a and 222b are respectively connected to the low-resistance region 231n through the openings of the insulating layer 215.

[0484] A connecting portion 204 is provided in a region of the substrate 351 that does not overlap with the substrate 352. In the connecting portion 204, the wiring 355 is electrically connected to the FPC 353 through the conductive layer 166 and the connecting layer 242. The conductive layer 166 shows an example of having the following structure: a laminated layer of a conductive film obtained by processing a conductive film identical to the conductive layers 224R, 224G, and 224B, a conductive film obtained by processing a conductive film identical to the conductive layers 151R, 151G, and 151B, and a conductive film obtained by processing a conductive film identical to the conductive layers 152R, 152G, and 152B. The conductive layer 166 is exposed on the top surface of the connecting portion 204. Therefore, the connecting portion 204 can be electrically connected to the FPC 353 through the connecting layer 242.

[0485] Preferably, a light-shielding layer 157 is provided on the surface of the substrate 352 on the side of the substrate 351. The light-shielding layer 157 can be provided between adjacent light-emitting devices, in the connecting portion 140, the circuit 356, etc. In addition, various optical members can be arranged outside the substrate 352.

[0486] The substrates 351 and 352 can use materials that can be used for the substrate 120.

[0487] As the adhesive layer 142, materials that can be used for the resin layer 122 can be used.

[0488] As the connecting layer 242, an anisotropic conductive film (ACF: Anisotropic Conductive Film), an anisotropic conductive paste (ACP: Anisotropic Conductive Paste), etc. can be used.

[0489] [Light-emitting device 100H] Figure 17 The main difference between the light-emitting device 100H shown and Figure 16A the light-emitting device 100B shown is that the former is a light-emitting device adopting a bottom emission structure.

[0490] The light emitted by the light-emitting device is emitted to the side of the substrate 351. The substrate 351 is preferably made of a material with high visible light transmittance. On the other hand, there is no limitation on the light transmittance of the material for the substrate 352.

[0491] It is preferable to form a light-shielding layer 157 between the substrate 351 and the transistor 201 and between the substrate 351 and the transistor 205. Figure 17 An example is shown in which a light-shielding layer 157 is provided on the substrate 351, an insulating layer 153 is provided on the light-shielding layer 157, and transistors 201, 205, etc. are provided on the insulating layer 153.

[0492] The light-emitting device 130R includes a conductive layer 112R, a conductive layer 126R on the conductive layer 112R, and a conductive layer 129R on the conductive layer 126R.

[0493] The light-emitting device 130B includes a conductive layer 112B, a conductive layer 126B on the conductive layer 112B, and a conductive layer 129B on the conductive layer 126B.

[0494] Materials with high visible light transmittance are used for the conductive layers 112R, 112B, 126R, 126B, 129R, and 129B respectively. A material that reflects visible light is preferably used for the common electrode 155.

[0495] Note that although Figure 17 the light-emitting device 130G is not shown in the figure, the light-emitting device 130G is also provided.

[0496] In addition, although Figure 17 etc. show an example in which the top surface of the layer 128 has a flat portion, there is no particular limitation on the shape of the layer 128.

[0497] [Light-emitting device 100H2] Figures 18A to 18C The shown light-emitting device 100H2 is an example of a bottom-emission type light-emitting device, but this light-emitting device is different from Figure 17 the shown light-emitting device 100H. The difference between the light-emitting device 100H2 and the light-emitting device 100H is that the former includes an organic resin layer 180. Note that in the drawings, the symbols of the same constituent elements as Figure 14A and Figure 14B are sometimes omitted, and the detailed content can be referred to the descriptions of Figure 14A and Figure 14B .

[0498] In addition, Figure 18B a top view layout of the pixel 178 (pixel 178a and pixel 178b) including the sub-pixels 110 (sub-pixels 110R, sub-pixels 110G, sub-pixels 110B, sub-pixels 110W) is shown. Figure 18CA top view of the organic resin layer 180 in the region where the sub-pixels 110R and 110W included in the pixel 178 are formed is shown. Note that the width between the light-shielding layers 317 is the width 110Rw in the light-emitting region of the sub-pixel 110R.

[0499] As Figure 18A shown, the organic resin layer 180 is provided on the insulating layer 214. As Figure 18A the region surrounded by the dotted line and Figure 18C shown, the organic resin layer 180 includes concave portions 181 (concave portion 181a, concave portion 181b) having a curved surface at least in the region where the sub-pixels are formed. In addition, the concave portion 181 may also be provided outside the light-emitting region as in the concave portion 181c. By providing the concave portion 181c, the light emission generated in the region overlapping with the light-shielding layer 317 or the light traveling in the region overlapping with the light-shielding layer 317 can be refracted and extracted from the light-emitting region, so that the light-emitting efficiency can be improved.

[0500] The plurality of concave portions 181 may also be formed in a matrix shape. The concave portion 181a and the concave portion 181b may be provided in contact with each other or may have a flat surface therebetween.

[0501] In addition, in Figures 18A to 18C , the top surface shape of the concave portion is hexagonal ( Figure 18C ), and the cross-sectional shape is semicircular ( Figure 18A ), but other shapes may be adopted as needed. For example, as the top surface shape of the concave portion, polygons such as triangles, quadrilaterals (including rectangles, squares), pentagons, etc., the above-mentioned polygon shapes with rounded corners, ellipses or circles, etc. can be cited.

[0502] As the organic resin layer 180, an insulating layer containing an organic material can be used. For example, as the organic resin layer 180, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimide amide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenolic resin, and precursors of the above resins, etc. can be used. In addition, as the organic resin layer 180, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerol, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin can also be used.

[0503] In addition, as the organic resin layer 180, a photosensitive resin can be used. As the photosensitive resin, a photoresist can also be used. The photosensitive resin can be a positive-type material or a negative-type material.

[0504] The organic resin layer 180 may also contain a material that absorbs visible light. For example, the organic resin layer 180 itself may be composed of a material that absorbs visible light, and the organic resin layer 180 may also contain a pigment that absorbs visible light. As the organic resin layer 180, for example, the following resins can be used: a resin that can be used as a color filter that transmits red, blue, or green light and absorbs other light; or a resin that contains carbon black as a pigment and is used as a black matrix; etc.

[0505] In addition, a first electrode 101 (first electrodes 101R and 101W) is included on the organic resin layer 180, and an organic compound layer 103 is included on the first electrode 101.

[0506] In addition, the first electrode 101 formed on the organic resin layer 180 also has a recess along the recess of the organic resin layer 180. In addition, the organic compound layer 103 formed on the first electrode 101 also has a recess along the recess of the first electrode 101. In addition, the common layer 104 formed on the organic compound layer 103 also has a recess along the recess of the organic compound layer 103. In addition, the second electrode 102 formed on the common layer 104 also has a recess along the recess of the common layer 104. That is, the recesses of the organic resin layer 180, the first electrode 101, the organic compound layer 103, the common layer 104, and the second electrode 102 overlap each other.

[0507] In addition, a common layer 104 is included on the organic compound layer 103 and the insulating layer 127, and a second electrode 102 is included on the common layer 104. A protective layer 131 is provided on the second electrode 102 and is bonded to the substrate 352 through an adhesive layer 142.

[0508] Note that although the light-emitting devices 130G and 130B are not shown in Figures 18A to 18C , the light-emitting devices 130G and 130B are also provided.

[0509] [Light-emitting device 100C] Figure 19A The light-emitting device 100C shown is Figure 16A a modified example of the top-emitting type light-emitting device 100B shown, and the difference between this light-emitting device 100C and the light-emitting device 100B is that the former includes a coloring layer 132R, a coloring layer 132G, and a coloring layer 132B.

[0510] In the light-emitting device 100C, the light-emitting element 130 has an area overlapping one of the color layers 132R, 132G, and 132B. The color layers 132R, 132G, and 132B may be provided on the surface of the substrate 351 on the side of the substrate 352. The ends of the color layer 132R, the ends of the color layer 132G, and the ends of the color layer 132B may overlap the light-shielding layer 157.

[0511] In the light-emitting device 100C, the light-emitting element 130 can emit white light, for example. In addition, for example, the color layer 132R, the color layer 132G, and the color layer 132B can transmit red light, green light, and blue light, respectively. In addition, the light-emitting device 100C may also adopt a structure in which the color layers 132R, 132G, and 132B are provided between the protective layer 131 and the adhesive layer 142.

[0512] Although Figure 16A and Figure 19A etc. show examples in which the top surface of the layer 128 has a flat portion, there is no particular limitation on the shape of the layer 128. Figures 19B to 19D An example of a deformation of the layer 128 is shown.

[0513] As Figure 19B and Figure 19D shown, the top surface of the layer 128 may have a shape that is concave at the center and in its vicinity in the cross section, that is, a shape having a concave curved surface. In addition, the common layer 154 may be provided in contact with the common electrode 155.

[0514] In addition, as Figure 19C shown, the top surface of the layer 128 may have a shape that is convex at the center and in its vicinity in the cross section, that is, a shape having a convex curved surface.

[0515] In addition, the top surface of the layer 128 may have one or both of a convex curved surface and a concave curved surface. In addition, there is no limitation on the number of the convex curved surface and the concave curved surface of the top surface of the layer 128, and it may be one or more.

[0516] In addition, the height of the top surface of the layer 128 and the height of the top surface of the conductive layer 224R may be the same or substantially the same, or may be different. For example, the height of the top surface of the layer 128 may be lower or higher than the height of the top surface of the conductive layer 224R.

[0517] Figure 19B It can also be said to be an example in which the layer 128 is accommodated inside the concave portion formed in the conductive layer 224R. On the other hand, as Figure 19D shown, the layer 128 may also be formed in such a manner as to exist outside the concave portion formed in the conductive layer 224R, that is, formed in such a manner that the width of the top surface of the layer 128 is larger than that of the concave portion.

[0518] [Light-emitting device 100C2] Figures 20A to 20C The light-emitting device 100C2 shown is Figures 19A to 19D a modified example of the top-emitting type light-emitting device 100C shown, and includes microlenses 182 on the color filter layers 132R, 132G, and 132B. Note that in the drawings, the symbols of the same components are sometimes omitted, and the detailed content can be referred to Figures 19A to 19D the description of Figures 19A to 19D .

[0519] In addition, Figure 20B a plan view layout of the pixels 178 (pixels 178a and 178b) including the sub-pixels 110 (sub-pixels 110R, 110G, and 110B) is shown, Figure 20C and a plan view of the microlenses 182 in the regions of the sub-pixels 110R, 110G, and 110B included in the pixel 178 is shown. Note that the region where the common electrode 155 contacts the organic compound layer 103 corresponds to the width 110Gw in the light-emitting region of the sub-pixel 110G.

[0520] In Figure 20A the light-emitting device 100C2 shown, a planarization film 143 is provided on the protective layer 131, and the color filter layers 132R, 132G, and 132B are provided on the planarization film 143. The planarization film 144 is provided so as to cover the color filter layers 132R, 132G, and 132B. The microlenses 182 are provided on the planarization film 144.

[0521] Note that, as Figure 20C shown, it is preferable to provide the microlenses 182 for each sub-pixel in the region where the sub-pixels are formed.

[0522] Note that, in Figure 20C , the top surface shape of the microlens 182 is hexagonal, but it may be other shapes as needed. For example, the top surface shape of the microlens 182 may be a triangle, a quadrangle (including a rectangle and a square), a pentagon, etc., a polygon with rounded corners, an oval, or a circle.

[0523] The microlenses 182 can be formed of the same material as the organic resin layer 180.

[0524] This embodiment can be appropriately combined with other embodiments or examples. In addition, in this specification, when multiple structural examples are shown in one embodiment, the structural examples can be appropriately combined.

[0525] Embodiment 6 In this embodiment, an electronic device of one aspect of the present invention will be described.

[0526] The electronic device of the present embodiment includes, in a display unit, a light-emitting device of one aspect of the present invention. The light-emitting device of one aspect of the present invention has high reliability and is easily high-definition and high-resolution. Therefore, it can be used for the display units of various electronic devices.

[0527] Examples of the electronic device include, in addition to electronic devices with a relatively large screen such as a television set, a desktop or notebook personal computer, a display for a computer, a digital signage, a pachinko machine or other large game machines, a digital camera, a digital video camera, a digital photo frame, a mobile phone, a portable game machine, a portable information terminal, a sound reproduction device, and the like.

[0528] In particular, since the light-emitting device of one aspect of the present invention can improve clarity, it can be suitably used for an electronic device including a relatively small display unit. Examples of such an electronic device include a watch-type and bracelet-type information terminal device (wearable device), a wearable device that can be worn on the head such as a VR device such as a head-mounted display, a glasses-type AR device, and an MR device.

[0529] The light-emitting device of one aspect of the present invention preferably has an extremely high resolution such as HD (number of pixels: 1280×720), FHD (number of pixels: 1920×1080), WQHD (number of pixels: 2560×1440), WQXGA (number of pixels: 2560×1600), 4K (number of pixels: 3840×2160), 8K (number of pixels: 7680×4320), and the like. In particular, it is preferably set to a resolution of 4K, 8K or higher. In addition, the pixel density (clarity) of the light-emitting device of one aspect of the present invention is preferably 100 ppi or more, preferably 300 ppi or more, more preferably 500 ppi or more, further preferably 1000 ppi or more, still further preferably 2000 ppi or more, still further preferably 3000 ppi or more, still further preferably 5000 ppi or more, and further preferably 7000 ppi or more. By using the above light-emitting device having one or both of high resolution and high clarity, the sense of reality and the sense of depth can be further improved in personal-use electronic devices such as portable or home-use ones. In addition, there is no particular limitation on the screen ratio (aspect ratio) of the light-emitting device of one aspect of the present invention. For example, the light-emitting device can adapt to various screen ratios such as 1:1 (square), 4:3, 16:9, and 16:10.

[0530] The electronic device according to this embodiment may also include a sensor having a function of measuring factors such as force, displacement, position, speed, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, electric power, radiation, flow rate, humidity, inclination, vibration, odor, or infrared rays).

[0531] The electronic device according to this embodiment may have various functions. For example, it may have functions such as displaying various information (static images, dynamic images, text images, etc.) on a display unit; the function of a touch panel; the function of displaying a calendar, date, or time; the function of executing various software (programs); the function of performing wireless communication; the function of reading programs or data stored in a storage medium; and so on.

[0532] Use Figures 21A to 21D An example of a wearable device that can be worn on the head will be described. These wearable devices have at least one of the functions of displaying AR content, displaying VR content, displaying SR content, and displaying MR content. When the electronic device has the function of displaying at least one of AR, VR, SR, and MR content, the immersion of the user can be enhanced.

[0533] Figure 21A The illustrated electronic device 700A and Figure 21B The illustrated electronic device 700B both include a pair of display panels 751, a pair of frames 721, a communication unit (not shown), a pair of mounting portions 723, a control unit (not shown), an imaging unit (not shown), a pair of optical members 753, a bezel 757, and a pair of nose pads 758.

[0534] The display panel 751 may apply a light-emitting device according to one aspect of the present invention. Thereby, a highly reliable electronic device can be realized.

[0535] Both the electronic device 700A and the electronic device 700B can project the image displayed on the display panel 751 onto a display area 756 in the optical member 753. Since the optical member 753 has translucency, the user can see the image displayed in the display area overlapping with the transmitted image seen through the optical member 753. Therefore, both the electronic device 700A and the electronic device 700B are electronic devices capable of performing AR display.

[0536] A camera capable of photographing the front may also be provided as an imaging unit on the electronic device 700A and the electronic device 700B. In addition, by providing an acceleration sensor such as a gyro sensor on the electronic device 700A and the electronic device 700B, the head orientation of the user can be detected and an image corresponding to the direction can be displayed on the display area 756.

[0537] The communication unit has a wireless communication device, through which an image signal can be supplied, for example. In addition, instead of or in addition to the wireless communication device, a connector capable of connecting a cable for supplying an image signal and a power potential may be included.

[0538] In addition, the electronic device 700A and the electronic device 700B are provided with a battery and can be charged in one or both of a wireless manner and a wired manner.

[0539] The housing 721 may also be provided with a touch sensor module. The touch sensor module has a function of detecting whether the outer surface of the housing 721 is touched. Through the touch sensor module, various processes can be executed by detecting a tap operation or a swipe operation of the user, etc. For example, through a tap operation, processes such as temporarily stopping or playing a moving image can be executed, and through a swipe operation, processes such as fast forward and rewind can be executed, etc. In addition, by providing a touch sensor module on each of the two housings 721, the operation range can be expanded.

[0540] As the touch sensor module, various touch sensors can be used. For example, various methods such as a capacitive method, a resistive film method, an infrared method, an electromagnetic induction method, a surface acoustic wave method, and an optical method can be adopted. In particular, it is preferable to apply a capacitive method or an optical method sensor to the touch sensor module.

[0541] When using an optical touch sensor, a photoelectric conversion device (also referred to as a photoelectric conversion element) can be used as the light receiving element. One or both of an inorganic semiconductor and an organic semiconductor can be used in the active layer of the photoelectric conversion device.

[0542] Figure 21C The illustrated electronic device 800A and Figure 21D the illustrated electronic device 800B both include a pair of display units 820, a housing 821, a communication unit 822, a pair of mounting units 823, a control unit 824, a pair of imaging units 825, and a pair of lenses 832.

[0543] The display unit 820 can apply a light emitting device of one aspect of the present invention. Thereby, a highly reliable electronic device can be realized.

[0544] The display unit 820 is provided at a position inside the housing 821 where it can be seen through the lens 832. In addition, by displaying different images on each of the pair of display units 820, three-dimensional display using parallax can be performed.

[0545] The electronic device 800A and the electronic device 800B can both be referred to as VR-oriented electronic devices. A user wearing the electronic device 800A or the electronic device 800B can see the image displayed on the display unit 820 through the lens 832.

[0546] The electronic device 800A and the electronic device 800B preferably have a mechanism in which the left - right positions of the lens 832 and the display unit 820 can be adjusted so that the lens 832 and the display unit 820 are located at the most suitable positions according to the position of the user's eyes. In addition, it preferably has a mechanism in which the focus is adjusted by changing the distance between the lens 832 and the display unit 820.

[0547] The user can mount the electronic device 800A or the electronic device 800B on the head using the mounting part 823. For example, in Figure 21C it, the mounting part 823 has a shape like the temple of glasses (also called hinges or wire temples, etc.), but is not limited to this. As long as the user can mount it, the mounting part 823 can have a shape such as a helmet type or a band type, for example.

[0548] The imaging unit 825 has the function of acquiring external information. The data acquired by the imaging unit 825 can be output to the display unit 820. An image...

Claims

1. An organometallic complex represented by the general formula (G1): in, R 2 and R 8 respectively represent an alkyl group having 1 to 10 carbon atoms and containing deuterium, R 1 , R 3 To R 7 and R 9 To R 26 each independently represents hydrogen, an alkyl group having 1 to 10 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 18 carbon atoms, R 4 To R 6 At least one of represents an alkyl group having 1 to 10 carbon atoms, And, R 22 To R 26 At least one of them represents an alkyl group having 3 to 10 carbon atoms.

2. The organometallic complex according to claim 1, Where R 23 and R 25 Each of them represents an alkyl group having 3 to 10 carbon atoms.

3. The organometallic complex according to claim 1, Where R 5 It represents an alkyl group having 1 to 10 carbon atoms.

4. The organometallic complex according to claim 1, Where R 5 represents an alkyl group having 1 to 10 carbon atoms, And R 23 and R 25 Each of them represents an alkyl group having 3 to 10 carbon atoms.

5. The organometallic complex according to claim 1, The organometallic complex is represented by the general formula (G2):

6. The organometallic complex according to claim 1, The organometallic complex is represented by structural formula (100):

7. A light emitting device, comprising: A light-emitting layer comprising the organic metal complex according to claim 1.

Images