MOCVD (Metal Organic Chemical Vapor Deposition) reactor for ZnO film material

Abstract

The invention relates to the technical field of semiconductor material preparation equipment, and discloses an MOCVD (Metal Organic Chemical Vapor Deposition) reactor for a ZnO thin film material, which comprises a reaction container, a movable frame is arranged in the reaction container, a shunting disc penetrates through and is fixed at the center of the movable frame, and uniformly distributed gas outlet nozzles penetrate through and are fixed on the lower surface of the shunting disc; a transition heating cylinder is arranged in the center of the top of the reaction container, and a connecting pipe penetrates through and is mounted at the top of the transition heating cylinder and is used for introducing reaction gas. The gas distribution area can be flexibly adjusted through the lifting mechanism of the moving frame to adapt to different preparation requirements, so that the reaction gas can reach the surface of the substrate at a more ideal angle and speed by adjusting the height of the gas outlet nozzle, the distribution uniformity of the gas on the surface of the substrate is further improved, the deposition of the ZnO film on the substrate is more uniform, and the production efficiency is improved. And the quality and the consistency of the film are improved.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor material preparation equipment, in particular to an MOCVD reactor for ZnO thin film material. Background Art

[0002] In the preparation process of semiconductor materials, metal organic chemical vapor deposition (MOCVD) technology is a widely used method for preparing high-quality thin film materials. ZnO thin films have important application prospects in optoelectronic devices, sensors and other fields due to their unique physical properties, such as wide bandgap and high exciton binding energy. However, the existing MOCVD reactor has some shortcomings when preparing ZnO thin film materials. For example, the uneven distribution of the reaction gas in the reaction chamber leads to unstable quality and inconsistent thickness of the prepared thin film materials; the heating and clamping methods of the substrate are not ideal, which affects the growth quality and production efficiency of the film; the structural design of the reactor is not reasonable, and the operation and maintenance are inconvenient. Therefore, a new type of MOCVD reactor for ZnO thin film materials is needed to solve the above problems. Summary of the invention

[0003] In view of the deficiencies in the prior art, the present invention provides an MOCVD reactor for ZnO thin film materials, which solves the problem that when preparing ZnO thin film materials in the existing reactor, the reaction gas is unevenly distributed in the reaction chamber, resulting in unstable quality and inconsistent thickness of the prepared thin film materials.

[0004] To achieve the above objectives, the present invention is implemented through the following technical solutions: A MOCVD reactor for ZnO thin film materials, including a reaction vessel, a movable frame is arranged inside the reaction vessel, a diverter plate is penetrated and fixed at the center of the movable frame, and evenly distributed gas outlet nozzles are penetrated and fixed on the lower surface of the diverter plate. A transition heating cylinder is arranged at the top center of the reaction vessel, and a connecting pipe is penetrated and installed at the top of the transition heating cylinder for connecting the reaction gas. Multiple groups of first heating wires are installed on the inner diameter of the transition heating cylinder, which can preheat the reaction gas. Four evenly distributed gas branch pipes are penetrated and fixed on the outer diameter of the transition heating cylinder, one end of the four gas branch pipes all penetrate the reaction vessel and are respectively connected to the four corners of the diverter plate, and the gas branch pipes are slidably connected to the reaction vessel to ensure that the preheated gas can be evenly transported to the diverter plate and then evenly dispersed into the reaction vessel through the gas outlet nozzle.

[0005] Lifting mechanism: A driving motor is fixed at the left front of the top of the reaction vessel. The output end of the driving motor passes through the reaction vessel and is fixed with a lifting screw. The lifting screw is threadedly connected to the moving frame. The bottom end of the lifting screw is connected to the partition plate through a bearing. An auxiliary sliding rod is set at the diagonal of the lifting screw. The outer diameter of the auxiliary sliding rod is slidably connected to the moving frame. The top of the auxiliary sliding rod is fixed to the reaction vessel and the bottom is fixed to the partition plate. The driving motor drives the lifting screw to rotate, so that the moving frame moves up and down. The auxiliary sliding rod ensures the stability of the moving frame. The height of the diverter plate can be adjusted as needed to optimize the gas distribution.

[0006] Clamping mechanism: A partition plate is fixedly connected to the lower part of the reaction container, and a connecting turntable is embedded and rotatably connected to the top center of the partition plate. A rotating motor is fixed to the bottom center of the partition plate, and the output end of the rotating motor passes through the partition plate and is fixedly connected to the connecting turntable. The clamping mechanism includes a tray fixed at the top of the connecting turntable, a movable horizontal groove is arranged horizontally on the top of the tray, and a positive and negative threaded rod is rotatably connected inside the movable horizontal groove, and a movable block is threadedly connected to the positive and negative threads of the positive and negative threaded rods respectively, and the movable blocks are both located inside the movable horizontal groove and slidably connected thereto. A micro motor is fixed in the middle of one side of the tray, and the output end of the micro motor passes through the tray and is fixedly connected to the positive and negative threaded rods. L-shaped clamping blocks are fixed on the top of the two movable blocks, and the inner sides of the L-shaped clamping blocks are made of rubber or other soft materials, and a uniformly distributed second heating wire is embedded and installed on the top of the tray. The rotating motor drives the tray to rotate, and the micro motor drives the positive and negative threaded rods to rotate, so that the L-shaped clamping block clamps or loosens the substrate, and the second heating wire heats the substrate.

[0007] Other structures: The left side of the front end of the reaction vessel is connected to a door panel by a hinge, and a locking handle is installed on the right side of the front end of the door panel to facilitate operation and maintenance. An exhaust pipe is installed on the right side of the reaction vessel, and the exhaust pipe is located above the partition plate to discharge the reaction waste gas.

[0008] The present invention provides a MOCVD reactor for ZnO thin film materials, which has the following beneficial effects:

[0009] 1. The present invention can flexibly adjust the gas distribution area through the lifting mechanism of the mobile frame to adapt to different preparation requirements. Therefore, by adjusting the height of the gas outlet nozzle, the reaction gas can reach the substrate surface at a more ideal angle and speed, further improving the uniformity of the gas distribution on the substrate surface, so that the deposition of the ZnO film on the substrate is more uniform, and the quality and consistency of the film are improved. In different ZnO film preparation processes, there may be different requirements for the interaction between the reaction gas and the substrate. Adjusting the height of the gas outlet nozzle can change the distance between the gas and the substrate, thereby adjusting the diffusion degree and energy state of the gas before reaching the substrate, etc., to adapt to different reaction conditions and process parameters, meet diverse preparation requirements, and expand the scope of application of the reactor. The appropriate distance between the gas outlet nozzle and the substrate can enable the reaction gas to fully contact and react with the substrate, reduce gas waste and invalid collisions, and improve the utilization rate of the reaction gas, thereby improving the efficiency of the entire reaction, shortening the preparation time, and improving production efficiency. By adjusting the height of the gas outlet nozzle and optimizing the interaction between the gas and the substrate, the growth rate, crystal structure and surface morphology of the film can be better controlled, thereby improving the electrical, optical and other properties of the ZnO film and enhancing the quality and application value of the film.

[0010] 2. The present invention realizes uniform distribution of reaction gas and improves the preparation quality and consistency of thin film materials through the coordination of transition heating cylinder, gas distribution branch pipe, flow distribution plate and gas outlet nozzle.

[0011] 3. The clamping mechanism of the substrate of the present invention can stably clamp the substrate, and promote the uniform growth of the film through rotation and heating, thereby improving production efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a schematic diagram of the three-dimensional structure of the present invention;

[0013] Figure 2 It is a front cross-sectional structural schematic diagram of the present invention;

[0014] Figure 3 It is a schematic diagram of the cross-sectional structure of the transition heating cylinder in the present invention;

[0015] Figure 4 It is a schematic diagram of the structure of the moving frame, the lifting screw rod and the diverter plate in the present invention;

[0016] Figure 5 It is a schematic diagram of the exploded structure of the partition plate, the connecting turntable and the tray in the present invention;

[0017] Figure 6 It is a schematic diagram of the cross-sectional structure of the tray in the present invention;

[0018] Figure 7 It is a schematic diagram of the cross-sectional structure of the partition plate in the present invention.

[0019] Among them, 1. reaction container; 2. door panel; 3. locking handle; 4. exhaust duct; 5. transition heating cylinder; 51. first heating wire; 52. connecting pipe; 53. gas branch pipe; 54. moving frame; 55. lifting screw rod; 56. driving motor; 57. bearing; 58. diverter plate; 59. gas outlet nozzle; 591. auxiliary slide rod; 6. partition plate; 61. rotating motor; 62. connecting turntable; 7. tray; 71. second heating wire; 72. moving horizontal groove; 73. positive and negative screw rod; 74. moving block; 75. L-shaped clamping block; 76. micro motor. DETAILED DESCRIPTION

[0020] The technical solution of the present invention will be described clearly and completely below in conjunction with the accompanying drawings of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0021] Please see attached Figure 1 -Attached Figure 7 The embodiment of the present invention provides a MOCVD reactor for ZnO thin film material, comprising:

[0022] 1. Overall structure

[0023] Reaction vessel: The main body of the reactor is the reaction vessel 1, which has the space required for the entire reaction. The left side of the front end of the reaction vessel 1 is connected to a door panel 2 by a hinge, which is convenient for operators to enter and exit the reaction vessel to perform operations, such as placing or removing a film material substrate. A locking handle 3 is installed on the right side of the front end of the door panel 2. When the door panel is closed, the door panel can be firmly locked on the reaction vessel 1 through the locking handle 3 to ensure the sealing of the reaction vessel during the reaction and prevent leakage of reaction gas. An exhaust pipe 4 is passed through and fixed on the right side of the reaction vessel 1, and the exhaust pipe 4 is located above the partition plate 6, which is used to discharge waste gas during the reaction process and maintain the gas balance of the reaction environment.

[0024] Moving frame and diverter plate: A moving frame 54 is provided inside the reaction vessel 1, and a diverter plate 58 is passed through and fixed at the center of the moving frame 54. Uniformly distributed gas outlet nozzles 59 are passed through and fixed on the lower surface of the diverter plate 58, and these gas outlet nozzles are used to evenly disperse the reaction gas to a specific area in the reaction vessel 1 to ensure the uniformity of the deposition of the thin film material on the substrate.

[0025] Transition heating tube and gas branch pipe: A transition heating tube 5 is arranged at the top center of the reaction vessel 1. A connecting pipe 52 is installed through the top of the transition heating tube 5 to connect to the external gas supply system and introduce the reaction gas into the transition heating tube 5. The inner diameter of the transition heating tube 5 is installed with multiple groups of first heating wires 51. These first heating wires 51 can preheat the gas entering the transition heating tube 5 to make it reach a suitable reaction temperature. Four evenly distributed gas branch pipes 53 are inserted and fixed on the outer diameter of the transition heating tube 5. One end of the four gas branch pipes 53 penetrates the reaction vessel 1 and is respectively connected to the four corners of the diverter plate 58, and the gas branch pipes 53 are slidably connected to the reaction vessel 1. This design allows the preheated gas to be evenly transported to the diverter plate 58 through the gas branch pipes 53, and then ejected through the gas outlet nozzle 59.

[0026] 2. Mobile frame lifting mechanism

[0027] Driving motor 56 and lifting screw 55: A driving motor 56 is fixed at the left front of the top of the reaction container 1. The output end of the driving motor 56 passes through the reaction container 1 and is fixed with the lifting screw 55, and the lifting screw 55 is threadedly connected to the moving frame 54. When the driving motor 56 is started, it drives the lifting screw 55 to rotate. Due to the threaded connection between the lifting screw 55 and the moving frame 54, the moving frame 54 moves up and down along the axial direction of the lifting screw 55. The bottom end of the lifting screw 55 is connected to the partition plate 6 through a bearing 57, and the bearing 57 ensures the stability and smoothness of the lifting screw 55 when rotating.

[0028] Auxiliary slide bar: An auxiliary slide bar 591 is provided at the diagonal position of the lifting screw 55, and the outer diameter of the auxiliary slide bar 591 is slidably connected to the moving frame 54. The top of the auxiliary slide bar 591 is fixed to the reaction container 1, and the bottom is fixed to the partition plate 6. The auxiliary slide bar 591 provides additional guidance and support for the lifting and lowering movement of the moving frame 54, ensuring that the moving frame 54 remains stable during the up and down movement, avoiding shaking or deviation, thereby ensuring the accuracy of the position of the diverter plate 58 and the gas outlet nozzle 59, which is conducive to improving the uniformity of the reaction gas distribution.

[0029] 3. Film material substrate clamping mechanism

[0030] Partition plate 6 and connecting turntable 62: A partition plate 6 is fixedly connected to the lower part of the reaction container 1, and the partition plate 6 divides the internal space of the reaction container 1 into two parts, upper and lower. A connecting turntable 62 is embedded and rotatably connected at the top center of the partition plate 6, and a rotating motor 61 is fixed at the bottom center of the partition plate 6, and the output end of the rotating motor 61 passes through the partition plate 6 and is fixedly connected to the connecting turntable 62. When the rotating motor 61 is started, it will drive the connecting turntable 62 to rotate on the partition plate 6.

[0031] Tray and related parts: The clamping mechanism includes a tray 7 fixed at the top of the connecting turntable 62, and the tray 7 is used to carry the film material substrate. A movable transverse groove 72 is horizontally provided on the top of the tray 7, and a positive and negative threaded screw 73 is rotatably connected inside the movable transverse groove 72. The positive and negative and negative threads of the positive and negative threaded screw 73 are respectively threadedly connected with movable blocks 74, and the movable blocks 74 are both located inside the movable transverse groove 72 and slidably connected thereto. A micro motor 76 is fixed in the middle of one side of the tray 7, and the output end of the micro motor 76 passes through the tray 7 and is fixedly connected to the positive and negative threaded screw 73. When the micro motor 76 is started, it will drive the positive and negative threaded screw 73 to rotate. Due to the special thread design of the positive and negative threaded screw 73, the two movable blocks 74 will move toward or away from each other in the movable transverse groove 72 according to the rotation direction of the screw.

[0032] L-shaped clamping block and second heating wire: L-shaped clamping blocks 75 are fixed on the top of the two moving blocks 74. When the moving blocks 74 move, the L-shaped clamping blocks 75 will move accordingly, thereby realizing the clamping or loosening operation of the thin film material substrate placed on the tray 7. In addition, evenly distributed second heating wires 71 are embedded and installed on the top of the tray 7. The second heating wires 71 can heat the thin film material substrate to a suitable reaction temperature, which helps to improve the deposition quality of the thin film material.

[0033] In actual use, the thin film material substrate is first placed on the tray 7 through the door panel 2, and the substrate is clamped by the L-shaped clamping block 75. Then, the reaction gas is introduced into the transition heating cylinder 5 through the connecting pipe 52, and after being preheated by the first heating wire 51, it is transported to the diverter plate 58 through the gas branch pipe 53, and then sprayed out by the gas outlet nozzle 59. At the same time, the driving motor 56 can adjust the height of the moving frame 54 as needed to optimize the gas distribution. The rotating motor 61 drives the tray 7 to rotate, the micro motor 76 adjusts the position of the L-shaped clamping block 75, and the second heating wire 71 heats the substrate. Under the synergistic effect of these components, the deposition reaction of the ZnO thin film material on the substrate is completed. After the reaction is completed, the exhaust gas is discharged through the exhaust pipe 4, the L-shaped clamping block 75 is loosened, and the door panel 2 is opened to take out the prepared thin film material.

[0034] The above embodiments describe in detail the structure and working process of an MOCVD reactor for ZnO thin film materials. The various components cooperate with each other to achieve effective control of the ZnO thin film material preparation process and improve the preparation quality and efficiency of the thin film material.

[0035] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A MOCVD reactor for ZnO thin film material, comprising a reaction vessel (1), characterized in that: A movable frame (54) is arranged inside the reaction container (1), a diverter disk (58) is passed through and fixed at the center of the movable frame (54), and evenly distributed gas outlet nozzles (59) are passed through and fixed on the lower surface of the diverter disk (58). A transition heating tube (5) is arranged at the center of the top of the reaction container (1), and a connecting pipe (52) is passed through and installed on the top of the transition heating tube (5). Multiple groups of first heating wires (51) are installed on the inner diameter of the transition heating tube (5), and four evenly distributed gas branch pipes (53) are passed through and fixed on the outer diameter of the transition heating tube (5), one end of each of the four gas branch pipes (53) passes through the reaction container (1) and is respectively connected to the four corners of the diverter disk (58), and the gas branch pipes (53) are slidably connected to the reaction container (1); a lifting mechanism for the movable frame (54) and a clamping mechanism for a thin film material substrate are also arranged inside the reaction container (1).

2. The MOCVD reactor for ZnO thin film material according to claim 1, characterized in that: A partition plate (6) is fixedly connected to the lower part of the interior of the reaction container (1), and the partition plate (6) is located below the movable frame (54).

3. The MOCVD reactor for ZnO thin film material according to claim 1, characterized in that: The lifting mechanism comprises a driving motor (56) fixed at the left front of the top of the reaction container (1); the output end of the driving motor (56) passes through the reaction container (1) and is fixed with a lifting screw (55); the lifting screw (55) is threadedly connected to the moving frame (54); the bottom end of the lifting screw (55) is connected to the partition plate (6) via a bearing (57).

4. The MOCVD reactor for ZnO thin film material according to claim 3, characterized in that: An auxiliary sliding rod (591) is provided at the diagonal position of the lifting screw rod (55), and the outer diameter of the auxiliary sliding rod (591) is slidably connected to the moving frame (54). The top of the auxiliary sliding rod (591) is fixed to the reaction container (1), and the bottom is fixed to the partition plate (6).

5. The MOCVD reactor for ZnO thin film material according to claim 1, characterized in that: The left side of the front end of the reaction container (1) is rotatably connected to a door panel (2) via a hinge, the right side of the front end of the door panel (2) is penetrated and installed with a locking handle (3), the right side of the reaction container (1) is penetrated and fixed with an exhaust pipe (4), and the exhaust pipe (4) is located above the partition plate (6).

6. The MOCVD reactor for ZnO thin film material according to claim 2, characterized in that: A connecting turntable (62) is embedded and rotatably connected at the top center of the partition plate (6), a rotating motor (61) is fixed at the bottom center of the partition plate (6), and the output end of the rotating motor (61) passes through the partition plate (6) and is fixedly connected to the connecting turntable (62).

7. The MOCVD reactor for ZnO thin film material according to claim 6, characterized in that: The clamping mechanism comprises a tray (7) fixed at the top of the connecting turntable (62), a movable transverse groove (72) is transversely provided at the top of the tray (7), a positive and negative threaded rod (73) is rotatably connected inside the movable transverse groove (72), a movable block (74) is threadedly connected at the positive and negative threads of the positive and negative threaded rod (73), and the movable blocks (74) are both located inside the movable transverse groove (72) and slidably connected thereto, a micro motor (76) is fixed at the middle of one side of the tray (7), and the output end of the micro motor (76) passes through the tray (7) and is fixedly connected to the positive and negative threaded rod (73).

8. The MOCVD reactor for ZnO thin film material according to claim 7, characterized in that: An L-shaped clamping block (75) is fixed on the top of each of the two moving blocks (74), and the inner side of each of the L-shaped clamping blocks (75) is made of rubber or other soft materials. A second heating wire (71) is embedded and evenly distributed on the top of the tray (7).

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