Flexible high-resolution array photoelectric device and preparation method thereof

Abstract

The embodiment of the invention provides a flexible high-resolution array photoelectric device and a preparation method, and belongs to the field of flexible photoelectric devices. The flexible high-resolution array photoelectric device comprises: a substrate; a first electrode formed on the substrate; an electron transport layer formed on the first electrode; a light emitting layer formed on the electron transport layer; the flexible silicon-based hole transport layer array is formed on the light-emitting layer; the second electrode is formed on the flexible silicon-based hole transport layer array; wherein the flexible silicon-based hole transport layer array comprises a silicon micro-line array and a high-molecular polymer filled in gaps of the silicon micro-line array. The silicon material adopted by the silicon micro-line array is high in resolution ratio, the flexibility of the hole transport layer is enhanced by filling the silicon micro-line array with the elastic high-molecular polymer, preparation is convenient, stress can be concentrated on the electron transport layer, the response effect of the photoelectric device on pressure is enhanced, and the photoelectric device is high in reliability. The system has the characteristics of high imaging resolution, easiness in integration and large response range.

Description

Technical Field

[0001] The present invention relates to the field of flexible optoelectronic devices, and in particular to a flexible high-resolution array optoelectronic device and a preparation method thereof. Background Art

[0002] In the field of artificial intelligence, tactile sensors are important components for obtaining external information. The essence of analog tactile sensing is the process of converting external stimulus signals such as pressure and strain into analyzable optical or electrical signals. Therefore, simulating human tactile perception is one of the core technologies of artificial intelligence, and it is also a hot spot and difficulty in current research. Driven by the rapid development of intelligent technology, intelligent robots, human-computer interaction systems, personalized health care and other fields are also developing in a more advanced, intelligent and miniaturized direction, which requires them to be integrated with tactile sensing elements with high resolution, easy signal acquisition and low crosstalk. On the one hand, the research on tactile sensing using electrical pressure sensors has received much attention. Through the structural design of the functional layer or material modification, the sensor is transformed from a single structure to a complex structure, thereby achieving the improvement of important performance parameters such as dynamic response range, sensitivity and response time. On the other hand, optical signals have the advantages of visualization, parallel acquisition and low crosstalk. The most important thing is that optical signals can better realize the distribution imaging of pressure, which is also a very critical part in tactile sensing.

[0003] However, the inventors of this application found in the process of realizing the present invention that it is difficult to construct a large-area array device for electrical pressure sensors, it is difficult to achieve high resolution of the array device, and it is difficult to achieve visualization of pressure and accurate pressure mapping. The distribution imaging of pressure by optical signals can be mainly divided into phosphor electroluminescent devices and LED devices. These devices basically use a contact structure to achieve pressure distribution imaging, and can only achieve two states of the device being on and off, and cannot achieve a response within a linear range. Moreover, since these are thin-film devices, the imaging resolution is low, and it is difficult to meet actual application requirements. Therefore, the prior art has the problems of being difficult to integrate, low imaging resolution, and a small response range. Summary of the invention

[0004] The purpose of an embodiment of the present invention is to provide a flexible high-resolution array optoelectronic device and a preparation method, in which a flexible silicon-based hole transport layer array is introduced as a hole transport layer and an electron transport layer made of an oxide film to improve the imaging resolution, improve the response range, and facilitate integration.

[0005] In order to achieve the above-mentioned purpose, the flexible high-resolution array optoelectronic device provided in an embodiment of the present invention includes: a substrate; a first electrode formed on the substrate; an electron transport layer formed on the first electrode; a light-emitting layer formed on the electron transport layer; a flexible silicon-based hole transport layer array formed on the light-emitting layer; and a second electrode formed on the flexible silicon-based hole transport layer array; wherein the flexible silicon-based hole transport layer array includes a silicon microwire array and a high molecular polymer filled in the gaps of the silicon microwire array.

[0006] Optionally, the silicon microwire array is a p-type silicon microwire array, and the high molecular polymer is polydimethylsiloxane.

[0007] Optionally, the distance between two adjacent array units in the silicon microwire array is 10 μm to 30 μm.

[0008] Optionally, the electron transport layer is an oxide film, and the oxide film includes cerium oxide and gadolinium, and the mass ratio is 5:1~9:1.

[0009] Optionally, the light-emitting layer is cadmium selenide quantum dots.

[0010] Optionally, cadmium selenide quantum dots are red.

[0011] Optionally, the first electrode is indium tin oxide and / or the second electrode is silver.

[0012] Optionally, the substrate is one of polyethylene terephthalate (PET), polyethylene naphthalate (PEN) and glass.

[0013] The method for preparing a flexible high-resolution array optoelectronic device provided in an embodiment of the present invention includes: preparing a flexible silicon-based hole transport layer array; forming a light-emitting layer on one side of the flexible silicon-based hole transport layer array and forming a second electrode on the other side; forming an electron transport layer on the light-emitting layer; preparing a transparent electrode, the transparent electrode including a first electrode and a substrate; forming the transparent electrode on the electron transport layer, with the first electrode being between the substrate and the electron transport layer.

[0014] Optionally, preparing a flexible silicon-based hole transport layer array includes: photolithographically forming a photoresist array on a silicon wafer doped with acceptor impurities; etching the photoresist array on the silicon wafer to obtain a silicon microwire array; and filling the gaps of the silicon microwire array by spin coating a high molecular polymer, and peeling it off the silicon wafer to obtain a flexible silicon-based hole transport layer array.

[0015] Optionally, a photoresist array is photolithographically formed by ultraviolet lithography; the photoresist array is etched on a silicon wafer by ICP technology; a high molecular polymer is spin-coated by high-speed spin coating; and the silicon microwire array spin-coated with the high molecular polymer is peeled off from the silicon wafer by mechanical stripping to obtain a flexible silicon-based hole transport layer array.

[0016] Through the above technical scheme, the present invention has the following characteristics. 1) The imaging resolution of the present invention is high: cadmium selenide red quantum dots are used as the light-emitting layer, combined with the good light transmittance of the transparent electrode, and a flexible silicon-based hole transport layer array is used as the hole transport layer. The depth-to-width ratio of the silicon microwire array used is at least 600DPI, and based on the flexible characteristics, when the photoelectric device is subjected to pressure, the stress is concentrated on the underlying electron transport layer. The material used in the electron transport layer makes the light response effect better, thereby making the imaging resolution higher; 2) Easy to integrate: The silicon microwire array is wrapped with an elastic polymer to form a flexible silicon-based hole transport layer array, and the PDMS curing process is combined to make the hole transport layer flexible and can be processed into different morphologies. Components of different sizes, and the preparation process is simple and easy, which is convenient for integration into different types of optoelectronic devices; 3) Large response range: On the one hand, the hole transport layer based on the flexible Si microwire array can concentrate stress; on the other hand, cerium oxide oxide films doped with different concentrations of gadolinium are used as electron transport layers. After being subjected to pressure, oxygen vacancies are rearranged, and then the charge movement produces piezoelectricity, thereby reducing the Schottky barrier height between the oxide film and the electrode, which is manifested as an increase in the current of the optoelectronic device integrated with it and an increase in the luminous intensity of the luminous pixel point. Therefore, when combined with piezoelectric materials, an optoelectronic array device with mechanoelectric response can be constructed with a large response range.

[0017] Other features and advantages of the embodiments of the present invention will be described in detail in the subsequent detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The accompanying drawings are used to provide a further understanding of the embodiments of the present invention and constitute a part of the specification. Together with the following specific implementations, they are used to explain the embodiments of the present invention, but do not constitute a limitation on the embodiments of the present invention. In the accompanying drawings: Figure 1 This is a schematic diagram of the basic structure of a flexible high-resolution array optoelectronic device; Figure 2 Schematic diagram of the flexible silicon-based hole transport layer array structure; Figure 3 This is a schematic diagram of the process for preparing a flexible high-resolution array optoelectronic device; Figure 4 Schematic diagram of the current change of cerium oxide thin films with different gadolinium doping concentrations under the same pressure change range; Figure 5 Schematic diagram of the current change of cerium oxide film with 20% gadolinium doping concentration under different pressure change ranges; Figure 6 Schematic diagram of current variation of a simple photoelectric test piece made of cerium oxide thin films with different doping concentrations under the same pressure variation range; Figure 7 This is a scanning electron microscope photo of the upper surface of the silicon microwire array; Figure 8 This is a scanning electron microscope image of a cross section of a silicon microwire array; Fig. 9 This is a scanning electron microscope photo of a flexible silicon-based hole transport layer array; Fig.10 This is a scanning electron microscope photo of a cross section of a flexible silicon-based hole transport layer array; Fig.11 This is a schematic diagram of the light intensity change of the light-emitting pixel of the flexible high-resolution array optoelectronic device when it is subjected to external pressure; Fig.12 A top view of the silicon mold with the word 'BINN'; Fig.13 Flexible high-resolution array optoelectronic devices Fig.12 Schematic diagram of the induced pressure distribution change of the silicon mold.

[0019] Description of Reference Numerals 1 is the second electrode, 2 is the flexible silicon-based hole transport layer array, 3 is the light-emitting layer, 4 is the electron transport layer, 5 is the transparent electrode, 51 is the substrate, 52 is the first electrode, 6 is the silicon microwire array, and 7 is a high molecular polymer. DETAILED DESCRIPTION

[0020] The specific implementation of the embodiment of the present invention is described in detail below in conjunction with the accompanying drawings. It should be understood that the specific implementation described here is only used to illustrate and explain the embodiment of the present invention, and is not used to limit the embodiment of the present invention.

[0021] It should be noted that the acquisition, transmission, storage, use, and processing of data in the technical solution of this application are in compliance with the relevant provisions of national laws and regulations. In the embodiments of this application, some existing solutions in the industry such as certain software, components, and models may be mentioned, which should be considered as exemplary. Their purpose is only to illustrate the feasibility of implementing the technical solution of this application, but it does not mean that the applicant has or will necessarily use the solution.

[0022] Device Embodiment See also Figure 1 The present invention discloses a flexible high-resolution array optoelectronic device, which includes, from bottom to top, a substrate 51, a first electrode 52, an electron transport layer 4, a light-emitting layer 3, a flexible silicon-based hole transport layer array 2 and a second electrode 1.

[0023] Specifically, the substrate 51 is a transparent substrate 51, which is one of polyethylene terephthalate (PET), polyethylene naphthalate (PEN) and glass. In this embodiment, polyethylene terephthalate (PET) is selected. The first electrode 52 is formed on the substrate 51. In this embodiment, the first electrode 52 is indium tin oxide (ITO). And the first electrode 52 can be assembled with the transparent substrate 51 to form a transparent electrode 5.

[0024] The electron transport layer 4 is formed on the first electrode 52. The electron transport layer 4 is an oxide film. The oxide film includes cerium oxide and gadolinium, and the mass ratio is 5:1~9:1. The oxide film can respond to pressure. When the oxide film is subjected to external pressure, the oxygen vacancies in the oxide film are rearranged under the action of the electric field, and the charge movement causes the oxide film to generate piezoelectricity, thereby reducing the Schottky barrier height between the oxide film and the electrode. Macroscopically, it is manifested as an increase in the current in the entire circuit, so that the luminous intensity of the luminous pixel point increases. In this embodiment, the electron transport layer 4 is cerium oxide (CeO 2) doped with 20% gadolinium (Gd) by magnetron sputtering. 2 ) film, that is, the mass ratio is 4:1. 20% concentration of gadolinium (Gd) doped cerium oxide (CeO 2-x ) has a good piezoelectric effect and can effectively regulate the carriers at the junction area or barrier interface.

[0025] The light-emitting layer 3 is formed on the electron transport layer 4. The light-emitting layer 3 is prepared by spin coating. The light-emitting layer 3 is a quantum dot light-emitting layer, and commercial cadmium selenide (CdSe) quantum dots are used. The reason for selecting commercial cadmium selenide (CdSe) quantum dots is that they have good optical properties and stability and are suitable as the light-emitting layer 3. The cadmium selenide (CdSe) quantum dots used are red, green, and blue, and red is preferred in this embodiment.

[0026] The flexible silicon-based hole transport layer array 2 is formed on the light-emitting layer 3. Figure 2As shown in the figure, it is a schematic diagram of the structure of the flexible silicon-based hole transport layer array 2. As can be seen from the figure, the flexible silicon-based hole transport layer array 2 includes a silicon microwire array 6 and an elastic polymer 7 filled in the gaps of the silicon microwire array 6. The elastic polymer 7 is preferably polydimethylsiloxane (PDMS). The reason for selecting the elastic polymer 7 is that it has excellent flexibility, inertness and good light transmittance, and is suitable as a wrapping material for the silicon (Si) microwire array. Combined with the PDMS curing process, the hole transport layer has flexibility. Specifically, the silicon microwire array 6 is a p-type silicon microwire array, and the distance between two adjacent array units (two adjacent microwires) in the silicon microwire array 6 is 10μm~30μm, and 15μm is selected in this embodiment. The height of the flexible silicon (Si)-based hole transport layer array is 55-56μm, and preferably 55μm in this embodiment, wherein the height of polydimethylsiloxane (PDMS) is consistent with that of the p-type silicon (Si) microwire array, which is 55μm. In this embodiment, the volume of the flexible silicon-based hole transport layer array 2 is 15 × 15 × 55 μm 3 .

[0027] The second electrode 1 is formed on the flexible silicon-based hole transport layer array 2. The second electrode 1 is a metal film formed by magnetron sputtering. In this embodiment, the metal film is silver. The metal film has good conductivity and stability and is suitable for use as an electrode.

[0028] Method Embodiment See also Figure 3 The present invention discloses a method for preparing a flexible high-resolution array optoelectronic device, including the following processes S100~S108.

[0029] S100, preparing a flexible silicon-based hole transport layer array 2.

[0030] S102, forming a light-emitting layer 3 on one side of the flexible silicon-based hole transport layer array 2. A high-speed spin coating method is used to prepare a thin film on one side of the flexible silicon-based hole transport layer array 2 to form the light-emitting layer 3. The high-speed spin coating method is simple and easy to operate, easy to prepare in large quantities, and low in cost. The light-emitting layer 3 is commercial cadmium selenide (CdSe) quantum dots, and the cadmium selenide quantum dots are red.

[0031] S104, forming an electron transport layer 4 on the light emitting layer 3. In this embodiment, an oxide film formed on the light emitting layer 3 by magnetron sputtering is used as the electron transport layer 4. The oxide film obtained by magnetron sputtering has good bonding with the underlying material, uniform thickness, and is easy to prepare. The oxide film of the electron transport layer 4 includes cerium oxide (CeO 2-x) and gadolinium (Gd), and the mass ratio is 5:1~9:1. In order to verify the response of the oxide film to pressure, the performance of the oxide film before and after integration is tested. First, the oxide film before integration, that is, cerium oxide (CeO 2-x ) for performance testing. Figure 4 , are cerium oxide (CeO 2-x ) film is subjected to the same external pressure. It can be seen that with the increase of doping concentration, cerium oxide (CeO 2-x ) As the film's response to pressure increases, the rate of change of current under the same pressure increases, showing a good response to pressure. Figure 5 It is 20% gadolinium (Gd) doped cerium oxide (CeO 2-x ) Schematic diagram of the change of the current of the film with external pressure under the voltage range of -1V~1V. It can be seen that the film at this doping concentration has the greatest response to pressure, and the forward current increases significantly with the increase of pressure. Secondly, in order to verify whether the performance of the oxide film changes after being integrated into the optoelectronic device, the performance of the oxide film after integration is tested. Two electrodes are set on both sides of the oxide film with different doping concentrations to make different flexible quantum dot light-emitting diode arrays as simple optoelectronic test pieces. The performance of this simple optoelectronic test piece is tested at the same voltage. Figure 6 The results are shown in Figure 2, which are based on different doping concentrations of cerium oxide (CeO 2-x ) is a schematic diagram of the current change rate of a simple optoelectronic test piece made of thin film when subjected to external pressure. It can be found that with the increase of doping concentration, the response degree of the simple optoelectronic test piece to pressure increases. Therefore, it can be concluded that the response trend of the simple optoelectronic test piece to pressure after the oxide film is integrated into the optoelectronic device is the same as the response trend before the oxide film is integrated.

[0032] S106, forming a second electrode 1 on the side of the flexible silicon-based hole transport layer array 2 away from the light-emitting layer 3. The second electrode 1 is a metal film, and in this embodiment, the second electrode 1 is silver, which is formed by magnetron sputtering. The metal film obtained by the magnetron sputtering method has good bonding with the underlying material, uniform thickness, and is easy to prepare.

[0033] S108, prepare a transparent electrode 5, the transparent electrode 5 includes a first electrode 52 and a substrate 51, and form the transparent electrode 5 on the electron transport layer 4, and make the first electrode 52 between the substrate 51 and the electron transport layer 4. The transparent electrode 5 is used for light transmission, so the substrate 51 needs to be a transparent substrate, which is one of polyethylene terephthalate (PET), polyethylene naphthalate (PEN) and glass. The first electrode 52 is indium tin oxide, and the indium tin oxide is electroplated on one side of the transparent substrate 51, and then the transparent electrode 5 is attached to the electron transport layer 4.

[0034] Among them, S100 preparing the flexible silicon-based hole transport layer array 2 specifically also includes the following process.

[0035] S1000, photolithography of a photoresist array on a silicon wafer doped with acceptor impurities. Specifically, the photoresist array is photolithography by ultraviolet lithography technology; the silicon wafer is a p-Si wafer, and a clean p-Si wafer is used. A p-Si wafer refers to a silicon wafer doped with acceptor impurities (such as trivalent elements such as boron, gallium, and indium). These acceptor impurities can provide holes, making the holes in the p-Si wafer the majority carriers and the electrons the minority carriers. This doped silicon wafer has the characteristics of a P-type semiconductor, that is, it mainly relies on holes to conduct electricity.

[0036] S1002, etching is performed on the silicon wafer using the photoresist array as an etching mask to obtain a silicon (Si) microwire array. Specifically, the photoresist array is etched on the surface of the silicon wafer by the inductively coupled plasma (ICP) technology to obtain the silicon microwire array 6. The inductively coupled plasma (ICP) etching method is easy to control and is suitable for regular morphology etching. Determining a suitable size for the silicon (Si) microwire array can ensure etching flatness and improve the resolution of the array as much as possible as well as the integrity of the array after mechanical stripping. In this embodiment, the length and width of the bottom surface of the silicon microwire array 6 are both 15 μm, the height is 55 μm, and the spacing between two adjacent array units is 15 μm. Please refer to Figure 7 , is a scanning electron microscope (SEM) image of the upper surface of the silicon microwire array 6 obtained on the surface of the p-Si wafer after ICP etching. Figure 8 , is a scanning electron microscope (SEM) image of the cross section of the Si microwire array obtained on the surface of the p-Si wafer after ICP etching. It can be seen that the morphology of the entire Si microwire array is very regular.

[0037] S1004, fill the gaps of the silicon (Si) microwire array by spin coating the polymer 7 and dry it to obtain a flexible silicon (Si) microwire array film. Specifically, the polymer 7 is spin coated by high-speed spin coating to form a PDMS wrapping film on the surface of the Si microwire array. Fig. 9, which is a schematic diagram of a scanning electron microscope photograph of the surface of a flexible silicon (Si) microwire array film. It can be seen that the Si microwire array wrapped with PDMS, combined with the PDMS curing process, makes the hole transport layer flexible, forming a flexible silicon (Si) microwire array film.

[0038] S1006, completely peeling off the flexible silicon (Si) microwire array film from the silicon wafer to obtain a flexible silicon-based hole transport layer array 2. Peeling off the silicon microwire array 6 spin-coated with a high molecular polymer 7 from the silicon wafer by a mechanical peeling method to obtain a flexible silicon-based hole transport layer array 2. Fig.10 , is a schematic diagram of a cross-sectional scanning electron microscope photograph of the flexible silicon-based hole transport layer array 2. It can be seen that the Si microwire array wrapped in PDMS can be completely peeled off from the surface of the p-Si wafer by mechanical peeling.

[0039] In addition, the present invention also conducts a performance test on the flexible high-resolution array optoelectronic device. First, a flexible high-resolution array optoelectronic device is obtained by the above-mentioned method for preparing the flexible high-resolution array optoelectronic device, and then a schematic diagram of the change of the brightness of a fixed single pixel point with the pressure enhancement is obtained, as shown in FIG. Fig.11 As shown in the figure, it can be seen that the brightness of a single pixel increases by about 10 times during the pressure change from 0 to 9 N, which has good response characteristics. For further information, please refer to Fig.12 When the flexible high-resolution array optoelectronic device is subjected to pressure from a silicon mold with the word "BINN", the pressure sensing of the pixel array changes as shown in the figure. Fig.13 As shown in the figure, it can be seen that the luminous intensity of the pixel array increases after being subjected to pressure, mapping out the pressure distribution "BINN". When the pixel is under pressure, the stress will be concentrated on the doped CeO in the lower layer. 2-x The film generates a piezoelectric polarization potential under the action of the electric field, which reduces the doped CeO 2-x The Schottky barrier height between the film and the bottom electrode enhances the transmission of carriers, thereby increasing the current in the circuit and increasing the luminous intensity of the pixel points. The brightness of the pixels that are not under pressure will not change. Therefore, the two-dimensional distribution of pressure is mapped through the change in light intensity of the pixel array.

[0040] Compared with the prior art, the flexible high-resolution array optoelectronic device provided in the embodiment of the present invention is based on a flexible silicon-based hole transport layer array 2. The hole transport layer based on the flexible Si microwire array can have a concentrating effect on stress and can be well combined with mechanoelectric coupling response materials such as piezoelectric effect to construct an array device. The manufacturing process is simple and easy, and cost-saving.

[0041] The preferred embodiments of the present invention are described in detail above in conjunction with the accompanying drawings. However, the present invention is not limited to the specific details in the above embodiments. Within the technical concept of the present invention, a variety of simple modifications can be made to the technical solution of the present invention, and these simple modifications all belong to the protection scope of the present invention.

[0042] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, the present invention will not further describe various possible combinations.

[0043] The above are only embodiments of the present application and are not intended to limit the present application. For those skilled in the art, the present application may have various changes and variations. Any modification, equivalent substitution, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application. Any combination of the various embodiments of the present invention can also be performed, as long as it does not violate the idea of ​​the present invention, it should also be regarded as the content disclosed by the present invention.

Claims

1. A flexible high-resolution array optoelectronic device, characterized in that: include: Substrate (51); A first electrode (52) formed on the substrate (51); An electron transport layer (4) formed on the first electrode (52); A light-emitting layer (3) formed on the electron transport layer (4); A flexible silicon-based hole transport layer array (2) formed on the light-emitting layer (3); as well as A second electrode (1) formed on the flexible silicon-based hole transport layer array (2); The flexible silicon-based hole transport layer array (2) comprises a silicon microwire array (6) and a high molecular polymer (7) filled in the gaps of the silicon microwire array (6).

2. The optoelectronic device according to claim 1, characterized in that: The silicon microwire array (6) is a p-type silicon microwire array, and the high molecular polymer (7) is polydimethylsiloxane.

3. The optoelectronic device according to claim 1, characterized in that: The distance between two adjacent array units in the silicon microwire array (6) is 10 μm to 30 μm.

4. The optoelectronic device according to claim 1, characterized in that: The electron transport layer (4) is an oxide film, and the oxide film comprises cerium oxide and gadolinium, and the mass ratio is 5:1 to 9:

1.

5. The optoelectronic device according to claim 1, characterized in that: The light-emitting layer (3) is cadmium selenide quantum dots.

6. The optoelectronic device according to claim 5, characterized in that: The cadmium selenide quantum dots are red.

7. The optoelectronic device according to claim 1, characterized in that: The first electrode (52) is indium tin oxide and / or the second electrode (1) is silver.

8. The optoelectronic device according to claim 1, characterized in that: The substrate (51) is one of polyethylene terephthalate (PET), polyethylene naphthalate (PEN) and glass.

9. A method for preparing a flexible high-resolution array optoelectronic device, characterized in that: include: Preparing a flexible silicon-based hole transport layer array (2); A light-emitting layer (3) is formed on one side of the flexible silicon-based hole transport layer array (2), and a second electrode (1) is formed on the other side; forming an electron transport layer (4) on the light-emitting layer (3); Preparing a transparent electrode (5), wherein the transparent electrode (5) comprises a first electrode (52) and a substrate (51); The transparent electrode (5) is formed on the electron transport layer (4), and the first electrode (52) is interposed between the substrate (51) and the electron transport layer (4).

10. The preparation method according to claim 9, characterized in that: The preparation of the flexible silicon-based hole transport layer array (2) comprises: Photolithography of a photoresist array on a silicon wafer doped with acceptor impurities; Etching the photoresist array on the silicon wafer to obtain a silicon microwire array (6); and The gaps of the silicon microwire array (6) are filled by spin coating a high molecular polymer (7), and the flexible silicon-based hole transport layer array (2) is obtained after peeling off from the silicon wafer.

11. The preparation method according to claim 10, characterized in that: The photoresist array is photolithographically formed by ultraviolet photolithography technology; the photoresist array is etched on the silicon wafer by ICP technology; the high molecular polymer (7) is spin-coated by high-speed spin coating; and the silicon microwire array (6) spin-coated with the high molecular polymer (7) is peeled off from the silicon wafer by mechanical peeling, thereby obtaining the flexible silicon-based hole transport layer array (2).

Images