Multilayer electronic component and dielectric composition

Abstract

The present disclosure provides a multilayer electronic component and a dielectric composition. The multilayer electronic component includes: a body including a dielectric layer and an internal electrode; and an external electrode disposed on the body, in which the dielectric layer includes: a main component represented by (Ca, Sr) (Zr, Ti) O3; a first sub-component including at least one rare earth element selected from the group consisting of yttrium (Y), dysprosium (Dy), and terbium (Tb); a second sub-component comprising silicon (Si); and a third secondary component including at least one variable valence acceptor element, in which the content of the at least one rare earth element in the first secondary component is 1.0 moles or more and 2.0 moles or less based on 100 moles of the primary component.

Description

[0001] This application claims the benefit of priority from Korean Patent Application No. 10-2023-0161893 filed on November 21, 2023 in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0002] The present disclosure relates to a multilayer electronic assembly and a dielectric composition. Background Art

[0003] A multilayer ceramic capacitor (MLCC, a type of multilayer electronic component) may be a chip capacitor mounted on and charged or discharged from a printed circuit board of various electronic products including image display devices such as liquid crystal displays (LCDs) and plasma display panels (PDPs), computers, smart phones, etc.

[0004] Since multilayer ceramic capacitors can have a small size and high capacitance and can be easily mounted, such multilayer ceramic capacitors can be used as components of various electronic devices. As various electronic devices such as computers and mobile devices have been designed to have smaller sizes and higher outputs, the demand for miniaturization and higher capacity of multilayer ceramic capacitors has increased.

[0005] Types of multilayer ceramic capacitors may include Class I multilayer ceramic capacitors and Class II multilayer ceramic capacitors, where Class I multilayer ceramic capacitors have high stability and low loss and are used in circuits requiring high reliability or stability, and Class II multilayer ceramic capacitors have high efficiency and small size and are used for bypass or coupling.

[0006] Recently, in order to reduce power consumption, demand for Class I products that meet C0G characteristics including reduced equivalent series resistance (ESR) and high quality factor (Q) value has increased. Summary of the invention

[0007] Some embodiments of the present disclosure are directed to providing a multilayer electronic component with low equivalent series resistance (ESR).

[0008] Some embodiments of the present disclosure are directed to providing a multilayer electronic component with a high Q value.

[0009] Some embodiments of the present disclosure are to provide a multilayer electronic component satisfying COG characteristics.

[0010] According to some embodiments of the present disclosure, a multilayer electronic component includes: a body including a dielectric layer and an inner electrode; and an outer electrode disposed on the body, wherein the dielectric layer includes: a main component consisting of (Ca, Sr)(Zr, Ti)O 3Represents; a first subcomponent including at least one rare earth element selected from the group consisting of yttrium (Y), dysprosium (Dy) and terbium (Tb); a second subcomponent including silicon (Si); and a third subcomponent including at least one variable valence acceptor element, wherein, based on 100 moles of the main component, the content of the at least one rare earth element in the first subcomponent is greater than or equal to 1.0 mole and less than or equal to 2.0 moles.

[0011] According to some embodiments of the present disclosure, a multilayer electronic component includes: a body including a dielectric layer and an inner electrode; and an outer electrode disposed on the body, wherein the dielectric layer includes a main component and a secondary component, and the main component has a structure represented by ABO. 3 A perovskite structure, wherein the A site of the perovskite structure includes at least one of calcium (Ca) and strontium (Sr), and the B site of the perovskite structure includes at least one of zirconium (Zr) and titanium (Ti), wherein the subcomponents include: a first subcomponent including at least one rare earth element selected from the group consisting of yttrium (Y), dysprosium (Dy) and terbium (Tb); a second subcomponent including silicon (Si); and a third subcomponent including a variable valence acceptor element, and wherein, based on 100 moles of the B site of the perovskite structure, the content of the at least one rare earth element of the first subcomponent is greater than or equal to 1.0 mole and less than or equal to 2.0 moles.

[0012] According to some embodiments of the present disclosure, a dielectric composition includes: a main component, composed of (Ca, Sr)(Zr, Ti)O 3 Represents; a first subcomponent including at least one rare earth element selected from the group consisting of yttrium (Y), dysprosium (Dy) and terbium (Tb), a second subcomponent including silicon (Si); and a third subcomponent including at least one variable valence acceptor element, wherein, based on 100 moles of the main component, the content of the at least one rare earth element in the first subcomponent is greater than or equal to 1.0 mole and less than or equal to 2.0 moles. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Some aspects, features and advantages of the present disclosure will be more clearly understood from the following detailed description in conjunction with the accompanying drawings, in which: Figure 1 is a perspective view showing a multilayer electronic component according to an embodiment of the present disclosure; Figure 2 is an exploded perspective view showing a stacked structure of a main body according to an embodiment of the present disclosure; Figure 3 is along Figure 1 A cross-sectional view taken along line II' in FIG. Figure 4 is along Figure 1A cross-sectional view taken along line II-II'; FIG. 5A to FIG. 5C is the STEP-IR diagram of the test case; and FIG. 6A to FIG. 6C It is the STEP-IR diagram of the test example. DETAILED DESCRIPTION

[0014] Hereinafter, some embodiments of the present disclosure will be described as follows with reference to the accompanying drawings.

[0015] These embodiments are described in sufficient detail to enable those skilled in the art to practice the present embodiment. It should be understood that the various embodiments of the present disclosure, although different, are not necessarily mutually exclusive. For example, without departing from the spirit and scope of the present disclosure, the structure, shape and size described as an example in the embodiments of the present disclosure may be implemented in another embodiment. In addition, without departing from the spirit and scope of the present disclosure, the position or arrangement of the elements in the embodiments may be modified. Therefore, the following detailed description should not be regarded as having a limiting meaning, and the scope of the present disclosure is limited only by the full scope of the attached claims appropriately interpreted and the equivalent schemes given by the claims.

[0016] In the accompanying drawings, the same elements will be represented by the same reference numerals. In addition, redundant descriptions and detailed descriptions of known functions and elements that may unnecessarily obscure the main purpose of the present disclosure will be omitted. In the accompanying drawings, some elements may be exaggerated, omitted or briefly shown, and the size of the elements does not necessarily reflect the actual size of these elements. The terms "comprise", "comprising", "constructed to", etc. of the specification are used to represent the presence of features, quantities, steps, operations, elements, parts or combinations thereof, and do not exclude the possibility of combining or adding one or more features, quantities, steps, operations, elements, parts or combinations thereof.

[0017] As used herein, the term "main component" means occupying 50% by mass or more, 50% by mole or more of the constituent components.

[0018] In the drawings, a first direction may be defined as a stacking direction or a thickness (T) direction, a second direction may be defined as a length (L) direction, and a third direction may be defined as a width (W) direction.

[0019] Multilayer electronic components Figure 1 is a perspective view showing a multilayer electronic component according to an embodiment.

[0020] Figure 2 is an exploded perspective view showing a stacked structure of a main body according to an embodiment.

[0021] Figure 3 is along Figure 1 A cross-sectional view taken along line II' in FIG.

[0022] Figure 4 is along Figure 1 A cross-sectional view taken along line II-II'.

[0023] In the following, reference will be made to Figures 1 to 4 The multilayer electronic components according to some embodiments of the present disclosure are described in more detail. A multilayer ceramic capacitor will be described as an example of a multilayer electronic component, but embodiments thereof are not limited thereto, and examples of the multilayer electronic component may include various multilayer electronic components such as an inductor, a piezoelectric element, a varistor, or a thermistor.

[0024] The multilayer electronic component 100 according to some embodiments may include: a body 110 including a dielectric layer 111 and internal electrodes 121 and 122; and external electrodes 131 and 132 disposed on the body 110, and the dielectric layer 111 may include a (Ca, Sr)(Zr, Ti)O 3 The main component represented by the invention comprises a first subcomponent, a second subcomponent and a third subcomponent, wherein the first subcomponent comprises a rare earth element, the rare earth element comprises at least one of yttrium (Y), dysprosium (Dy) and terbium (Tb), the second subcomponent comprises silicon (Si), and the third subcomponent comprises a variable valence acceptor element.

[0025] Alternatively, the multilayer electronic component 100 according to another embodiment may include: a body 110 including a dielectric layer 111 and internal electrodes 121 and 122; and external electrodes 131 and 132 disposed on the body 110, and the dielectric layer 111 may include a denoted ABO 3 The main components and subcomponents of the perovskite structure may include calcium (Ca) and strontium (Sr) at the A site of the perovskite structure, zirconium (Zr) and titanium (Ti) at the B site of the perovskite structure, the subcomponents may include a first subcomponent, a second subcomponent and a third subcomponent, the first subcomponent includes a rare earth element, the rare earth element includes at least one of yttrium (Y), dysprosium (Dy) and terbium (Tb), the second subcomponent includes silicon (Si), the third subcomponent includes a variable valence acceptor element, and based on 100 moles of the B site of the perovskite structure, the content of the rare earth element of the first subcomponent may be greater than or equal to 1.0 mole and less than or equal to 2.0 moles.

[0026] The body 110 may have dielectric layers 111 and internal electrodes 121 and 122 that are alternately stacked.

[0027] More specifically, the body 110 may include a capacitor forming portion Ac, which is disposed in the body 110 and forms a capacitor, and the capacitor forming portion Ac includes first and second internal electrodes 121 and 122 alternately disposed to face each other with a dielectric layer 111 interposed therebetween.

[0028] The shape of the body 110 may not be limited to any particular shape, but Figure 1 As shown in , the body 110 may have a hexahedral shape or a shape similar to a hexahedral shape. Due to shrinkage of ceramic powder included in the body 110 during a firing process, the body 110 may not have a precise hexahedral shape formed by straight lines but may have a substantially hexahedral shape.

[0029] The body 110 may have a first surface 1 and a second surface 2 opposite to each other in a first direction, a third surface 3 and a fourth surface 4 connected to the first surface 1 and the second surface 2 and opposite to each other in the second direction, and a fifth surface 5 and a sixth surface 6 connected to the first surface 1, the second surface 2, the third surface 3 and the fourth surface 4 and opposite to each other in a third direction.

[0030] The plurality of dielectric layers 111 forming the body 110 may be in a fired state, and adjacent dielectric layers 111 may be integrated with each other such that a boundary between the adjacent dielectric layers 111 may be difficult to distinguish without using a scanning electron microscope (SEM).

[0031] Recently, as demands for products satisfying C0G characteristics with reduced equivalent series resistance (ESR) and high quality factor (Q) increase, it may be necessary to design an optimal composition ratio.

[0032] Here, the Q value may be expressed as Q=1 / DF=(1 / ESR)×(1 / ωC) (where ω=2πf), and may correspond to the inverse of the dissipation factor (DF). The dissipation factor may also be referred to as dielectric loss, and may be expressed as loss tangent (tanδ). The definition of the dissipation factor may refer to the time rate at which electrical energy is converted into heat in a dielectric when a time-varying electric field is applied.

[0033] The C0G characteristic may indicate a C0G characteristic defined in the EIA standard, and may indicate a condition where a temperature coefficient α (10 -6 / K) is 0, the temperature coefficient multiplier is -1, and the temperature coefficient tolerance is ±30ppm. In other words, the C0G characteristic may mean that the condition of 0±30ppm / °C is satisfied within the temperature range of -55°C to 125°C.

[0034] The raw material for forming the dielectric layer 111 is not limited as long as sufficient capacitance can be obtained, and generally, perovskite (ABO) can be used. 3 ) material, but in order to satisfy the C0G characteristic, the dielectric layer 111 may include (Ca x , Sr 1-x )(Zr y , Ti 1-y ) 3 (CSZT) as a main component, and may include a first subcomponent including a rare earth element, a second subcomponent including silicon (Si), and a third subcomponent including a variable valence acceptor element.

[0035] In addition, in order to satisfy the C0G characteristics, when the atomic ratio of calcium (Ca) in the A site of the perovskite structure is defined as x, the atomic ratio of strontium (Sr) in the A site of the perovskite structure is defined as 1-x, the atomic ratio of zirconium (Zr) in the B site of the perovskite structure is defined as y, and the atomic ratio of titanium (Ti) in the B site of the perovskite structure is defined as 1-y, x can satisfy 0.5≤x<1.0, and y can satisfy 0.950≤y<1.00.

[0036] In an embodiment, as for the raw materials for forming the dielectric layer 111 , various ceramic additives, organic solvents, binders, dispersants, etc. may be added to the CSZT main component.

[0037] In some embodiments, as an example of a more specific method of measuring the content of an element in each component included in the multilayer electronic component 100, in the case of a destructive method, the component may be analyzed using an EDS mode of a scanning electron microscope (SEM), an EDS mode of a transmission electron microscope (TEM), or an EDS mode of a scanning transmission electron microscope (STEM). First, a thin-sectioned analysis sample may be prepared using a focused ion beam (FIB) device in a region including a dielectric microstructure (such as a dielectric grain) in a cross section of a sintered dielectric material. Thereafter, a damaged layer on the surface of the thinned sample may be removed using xenon (Xe) or argon (Ar) ion milling, and a qualitative / quantitative analysis may be performed by mapping each component to be measured in an image obtained using SEM-EDS, TEM-EDS, or STEM-EDS. In this case, the qualitative / quantitative analysis graph of each component may be expressed in terms of weight percent (wt%), atomic percent (at%), or molar percent (mol%) of each element. In this case, the number of moles of a specific component may be expressed by converting the number of moles of another specific component.

[0038] As another method, the sheet may be pulverized, a region including a dielectric microstructure may be selected, and components in the region including the dielectric microstructure may be analyzed using an apparatus such as an inductively coupled plasma optical spectrometer (ICP-OES) and an inductively coupled plasma mass spectrometer (ICP-MS).

[0039] Here, in some embodiments, x may satisfy 0.5≤x<1.0, and y may satisfy 0.950≤y<1.00. In some embodiments, x may satisfy 0.6≤x≤0.8, and y may satisfy 0.960≤y≤0.980. In some embodiments, x may be 0.7, and y may be 0.97.

[0040] Here, when x satisfies 0.5≤x<1.0 and y satisfies 0.950≤y<1.00, the C0G characteristic may be satisfied.

[0041] The sub-component may include a first sub-component including a rare earth element.

[0042] With barium titanate (BaTiO 3 ) Dielectric materials are different, and the dielectric constant of C0G materials including CSZT can be achieved by ionic polarization rather than dipole polarization. Therefore, when rare earth elements are added to C0G dielectric materials, the rare earth elements can increase the interface resistance, thereby improving reliability, but when the elements are partially substituted or solid-dissolved into the lattice, the elements may act as defects that interfere with ionic polarization, which has an adverse effect on ionic polarization. Therefore, the energy consumption required to achieve the dielectric constant may increase, so that the dissipation factor may increase and the Q value may also decrease.

[0043] Therefore, reliability can be improved by controlling grain growth and making the size distribution of dielectric grains uniform by adding the first subcomponent.

[0044] Here, the rare earth element may include at least one of yttrium (Y), dysprosium (Dy), and terbium (Tb).

[0045] In this case, the content of the rare earth element of the first subcomponent may be greater than or equal to 1.0 mol and less than or equal to 2.0 mol based on 100 mol of the CSZT main component, or the content of the rare earth element of the first subcomponent may be greater than or equal to 1.0 mol and less than or equal to 2.0 mol based on 100 mol of the B site of the perovskite structure.

[0046] Hereinafter, for convenience of description, description will be made based on the CSZT main component, and the descriptions are also applicable to the case where the description is made based on the B site of the perovskite structure.

[0047] Based on 100 moles of the CSZT main component, the content of the rare earth element of the first subcomponent can satisfy greater than or equal to 1.0 mole, greater than or equal to 1.1 mole, greater than or equal to 1.2 mole, greater than or equal to 1.3 mole, greater than or equal to 1.4 mole, greater than or equal to 1.5 mole, greater than or equal to 1.6 mole, greater than or equal to 1.7 mole, greater than or equal to 1.8 mole, greater than or equal to 1.9 mole, and less than or equal to 2.0 mole, less than or equal to 1.9 mole, less than or equal to 1.8 mole, less than or equal to 1.7 mole, less than or equal to 1.6 mole, less than or equal to 1.5 mole, less than or equal to 1.4 mole, less than or equal to 1.3 mole, less than or equal to 1.2 mole, less than or equal to 1.1 mole, so that the reliability of multilayer electronic components can be improved.

[0048] When the rare earth element content of the first subcomponent is less than 1.0 mol based on 100 mol of the CSZT main component, reliability may be insufficient, and when the content of the first subcomponent exceeds 2.0 mol based on 100 mol of the CSZT main component, the Q value may decrease.

[0049] In addition, the subcomponent may include a second subcomponent including silicon (Si).

[0050] The second sub-component may function as a sintering aid, and may lower the sintering temperature and promote sintering characteristics by reacting with the main component or other sub-components.

[0051] The second subcomponent may contain 0.95 mol or more of silicon (Si) based on 100 mol of the CSZT main component or 0.95 mol or more based on 100 mol of the B site of the perovskite structure.

[0052] Since the content of silicon (Si) as the second subcomponent satisfies 0.95 mol or more based on 100 mol of the main component of CSZT, the sintering density of the dielectric layer can be sufficiently achieved. For example, the average sintering density of the dielectric layer can be 4.66 g / cm or more. 3 accomplish.

[0053] The upper limit value of the content of silicon (Si) of the second subcomponent is not limited to any specific example to sufficiently ensure the sintering density of the dielectric layer, and the content of silicon (Si) of the second subcomponent may be, for example, 1.35 mol or less.

[0054] Here, the sintered density may mean the bulk density among true density, apparent density, and bulk density, but the embodiments of the present disclosure are not limited thereto, and the sintered density may mean the true density or the apparent density, and there may be almost no difference in density values.

[0055] The sintered density can be measured using, for example, a buoyancy-based Archimedes method. More specifically, the sintered density can be measured using the Archimedes principle using an electron microscope (also used as a hydrometer), and when the density of water is assumed to be 1, the sintered density can be obtained by calculating the bulk density as one of the sintered densities. Here, the bulk density can be expressed as {dry weight / (saturated weight-underwater weight)}, where the dry weight is the weight of the sample in a state without water, the underwater weight is the weight measured by suspending the sample in water, and the saturated weight can be the weight measured after only wiping the surface of the sample immersed in water.

[0056] As another method, the sintered density may be measured by measuring the weight (g) of the sample and calculating the volume by measuring the size of the sample in the first direction, the size of the sample in the second direction, and the size of the sample in the third direction. However, the method is not limited thereto.

[0057] In addition, the subcomponents may include a third subcomponent including a variable-valence acceptor element.

[0058] Here, the variable valence acceptor element may include at least one selected from the group consisting of manganese (Mn), vanadium (V), chromium (Cr), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), and zinc (Zn), but the embodiments of the present disclosure are not limited thereto.

[0059] In this case, the content of the variable valence acceptor element of the third subcomponent may be greater than or equal to 1.0 mol and less than or equal to 3.0 mol based on 100 mol of the main component, or the content of the variable valence acceptor element of the third subcomponent may be greater than or equal to 1.0 mol and less than or equal to 3.0 mol based on 100 mol of the B site of the perovskite structure.

[0060] The third auxiliary component can provide anti-reduction properties, improve the densification of the dielectric microstructure, and maintain a stable high temperature acceleration reaction.

[0061] The content of the variable valence acceptor element of the third subcomponent may satisfy 1.0 mol or more and 3.0 mol or less based on 100 mol of the CSZT main component, and the reliability of the multilayer electronic component may be improved.

[0062] When the content of the variable valence acceptor element of the third subcomponent is less than 1.0 mol based on 100 mol of the CSZT main component, the density may be reduced, so that the reliability may be insufficient, and when the content of the variable valence acceptor element of the third subcomponent exceeds 3.0 mol based on 100 mol of the CSZT main component, the high-temperature accelerated reaction may be deteriorated.

[0063] The microstructure of the dielectric layer 111 of the multilayer electronic component may include dielectric grain boundaries disposed between dielectric grains adjacent to each other.

[0064] In order to improve the reliability of a dielectric material having a C0G characteristic, a relatively large number of dielectric grain boundaries are ensured by increasing the fraction of dielectric grain boundaries, thereby preventing degradation of insulation resistance.

[0065] When comparing the resistance in dielectric microstructures, it is known that the resistance value of grain boundaries can be relatively larger than the resistance value in grains.

[0066] The reason why the resistance value of the grain boundary is greater than the resistance value in the grain can be explained by the Schottky barrier model in the interface region. Generally, a space charge layer with a high concentration of ions or electrons, i.e., a depletion layer, may be formed near the grain boundary. When a specific element is distributed to the grain boundary at a high concentration, the Fermi level may increase, and the Schottky barrier height may increase, so that the depletion layer may increase.

[0067] Therefore, since a tunneling phenomenon of charge carriers due to hot ion activation is prevented, an effect of improving reliability can be expected.

[0068] In an embodiment, while satisfying the composition and content of the main component and the first to third subcomponents as a dielectric material, reliability may be improved by reducing charge density or increasing the fraction of grain boundaries during solid solution or grain boundary segregation within CSZT.

[0069] The thickness td of the dielectric layer 111 may not be limited to any specific example.

[0070] However, in order to ensure the reliability of the multilayer electronic component 100 in a high voltage environment, the thickness of the dielectric layer 111 may be 10.0 μm or less. In addition, in order to achieve miniaturization and high capacitance of the multilayer electronic component 100, the thickness of the dielectric layer 111 may be 3.0 μm or less. In order to more easily achieve ultra-miniaturization and high capacitance, the thickness of the dielectric layer 111 may be 1.0 μm or less, preferably 0.6 μm or less, and more preferably 0.4 μm or less.

[0071] Here, the thickness td of the dielectric layer 111 may refer to an average thickness of the dielectric layer 111 disposed between the first and second internal electrodes 121 and 122 .

[0072] The thickness td of the dielectric layer 111 may refer to the size of the dielectric layer 111 in the first direction. In addition, the thickness td of the dielectric layer 111 may refer to the average thickness td of the dielectric layer 111 and may refer to the average size of the dielectric layer 111 in the first direction.

[0073] The average size of the dielectric layer 111 in the first direction may be measured by scanning a cross section of the body 110 in the first direction and the second direction using a scanning electron microscope (SEM) at a magnification of 10000. More specifically, the average size of the dielectric layer 111 in the first direction may represent an average value calculated by measuring the size of the dielectric layer 111 in the first direction at 10 points spaced at equal distances in the second direction in the scanned image. In addition, by extending the measurement of the average value to ten dielectric layers 111, the average size of the dielectric layer 111 in the first direction may be further generalized.

[0074] The internal electrodes 121 and 122 may be alternately stacked with the dielectric layers 111 .

[0075] The inner electrode may include a first inner electrode 121 and a second inner electrode 122. The first inner electrode 121 and the second inner electrode 122 may be alternately disposed to face each other, with the dielectric layer 111 included in the body 110 interposed therebetween, and the first inner electrode 121 and the second inner electrode 122 may be exposed to the third surface 3 and the fourth surface 4 of the body 110, respectively.

[0076] More specifically, the first inner electrode 121 may be spaced apart from the fourth surface 4 and may be exposed through the third surface 3, and the second inner electrode 122 may be spaced apart from the third surface 3 and may be exposed through the fourth surface 4. The first outer electrode 131 may be disposed on the third surface 3 of the body 110 and may be connected to the first inner electrode 121, and the second outer electrode 132 may be disposed on the fourth surface 4 of the body 110 and may be connected to the second inner electrode 122.

[0077] That is, the first internal electrode 121 may not be connected to the second external electrode 132 and may be connected to the first external electrode 131, and the second internal electrode 122 may not be connected to the first external electrode 131 and may be connected to the second external electrode 132. In this case, the first internal electrode 121 and the second internal electrode 122 may be electrically separated from each other by the dielectric layer 111 disposed therebetween.

[0078] The body 110 may be formed by alternately stacking ceramic green sheets on which the conductive paste for the first internal electrode 121 is printed and ceramic green sheets on which the conductive paste for the second internal electrode 122 is printed and firing the ceramic green sheets.

[0079] The material for forming the internal electrodes 121 and 122 is not limited to any specific example, and any material having excellent conductivity may be used. For example, the internal electrodes 121 and 122 may include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0080] In addition, the internal electrodes 121 and 122 may be formed by printing a conductive paste for internal electrodes on a ceramic green sheet, the conductive paste for internal electrodes including one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof. A screen printing method or a gravure printing method may be used as a method of printing the conductive paste for the internal electrodes, but the embodiments of the present disclosure are not limited thereto.

[0081] The thickness te of the internal electrodes 121 and 122 may not be limited to any specific example.

[0082] However, in order to ensure the reliability of the multilayer electronic component 100 in a high voltage environment, the thickness te of the internal electrodes 121 and 122 may be 3.0 μm or less. In addition, in order to achieve miniaturization and high capacitance of the multilayer electronic component 100, the thickness of the internal electrodes 121 and 122 may be 1.0 μm or less. In order to easily achieve ultra-miniaturization and high capacitance, the thickness of the internal electrodes 121 and 122 may be 0.6 μm or less, and according to some embodiments, the thickness of the internal electrodes 121 and 122 may be 0.4 μm or less.

[0083] Here, the thickness te of the internal electrodes 121 and 122 may refer to the size of the internal electrodes 121 and 122 in the first direction. In addition, the thickness te of the internal electrodes 121 and 122 may refer to the average thickness te of the internal electrodes 121 and 122 and may refer to the average size of the internal electrodes 121 and 122 in the first direction.

[0084] The average size of the internal electrodes 121 and 122 in the first direction may be measured by scanning a cross section of the body 110 in the first direction and the second direction using a scanning electron microscope (SEM) with a magnification of 10000. More specifically, the average value may be measured based on the size of the internal electrodes at 10 points spaced at equal distances in the second direction in the scanned image. The 10 points spaced at equal distances may be specified in the capacitance forming portion Ac. In addition, by extending the measurement of the average value to 10 internal electrodes, the average size of the internal electrodes 121 and 122 may be further generalized.

[0085] In some embodiments, an average thickness td of at least one of the plurality of dielectric layers 111 and an average thickness te of at least one of the plurality of internal electrodes 121 and 122 may satisfy 2×te <td。

[0086] In other words, the average thickness td of one of the dielectric layers 111 may be greater than twice the average thickness te of one of the internal electrodes 121 and 122. Preferably, the average thickness td of the plurality of dielectric layers 111 may be greater than twice the average thickness te of the plurality of internal electrodes 121 and 122.

[0087] Generally, high voltage electronic components may have problems in reliability due to a decrease in breakdown voltage (BDV) in a high voltage environment.

[0088] Therefore, in order to prevent the breakdown voltage from decreasing under a high voltage environment, by constructing the average thickness td of the dielectric layer 111 to be greater than twice the average thickness te of the internal electrodes 121 and 122, the thickness of the dielectric layer (i.e., the distance between the internal electrodes) can be increased, and the breakdown voltage characteristics can be improved.

[0089] When the average thickness td of the dielectric layer 111 is less than or equal to twice the average thickness te of the internal electrodes 121 and 122, the average thickness of the dielectric layer (ie, the distance between the internal electrodes) may decrease, so that the breakdown voltage may be reduced and a short circuit may occur between the internal electrodes.

[0090] The body 110 may include cover portions 112 and 113 disposed on both end surfaces of the capacitance forming portion Ac in the first direction.

[0091] More specifically, the body 110 may include an upper cover portion 112 disposed on one surface of the capacitance forming portion Ac in the first direction and a lower cover portion 113 disposed on the other surface of the capacitance forming portion Ac in the first direction. More specifically, the body 110 may include an upper cover portion 112 disposed in an upper portion of the body 110 in the first direction and a lower cover portion 113 disposed in a lower portion of the body 110 in the first direction.

[0092] The upper cover 112 and the lower cover 113 may be formed by stacking a single dielectric layer or two or more dielectric layers on the upper and lower surfaces of the capacitance forming part Ac in the first direction, and may prevent damage to the internal electrodes 121 and 122 due to physical stress or chemical stress.

[0093] The upper cover 112 and the lower cover 113 do not include the internal electrodes 121 and 122, and may include the same material as that of the dielectric layer 111. That is, the upper cover 112 and the lower cover 113 may include a ceramic material, for example, barium titanate (BaTiO 3 ) based ceramic materials.

[0094] The thickness tc of the covering parts 112 and 113 may not necessarily be limited to any specific example.

[0095] However, in order to easily realize miniaturization and high capacitance of multilayer electronic components, the thickness tc of covers 112 and 113 may be 100 μm or less, preferably 30 μm or less. More preferably, in ultra-small products, the thickness tc of covers 112 and 113 may be 20 μm or less.

[0096] Here, the thickness tc of the covering parts 112 and 113 may refer to the size of the covering parts 112 and 113 in the first direction. In addition, the thickness tc of the covering parts 112 and 113 may refer to the average thickness tc of the covering parts 112 and 113 and may refer to the average size of the covering parts 112 and 113 in the first direction.

[0097] The average size of the covering portions 112 and 113 in the first direction may be measured by scanning a cross section of the body 110 in the first direction and the second direction using a scanning electron microscope (SEM) at a magnification of 10000. More specifically, the average size of the covering portions 112 and 113 in the first direction may represent an average value calculated by measuring the sizes of the covering portions 112 and 113 in the first direction at 10 points spaced at equal distances in the second direction in a scanned image of the covering portions.

[0098] In addition, the average size of the covering portion in the first direction measured by the above method may be substantially the same as the average size of the covering portion in the first direction in the cross section of the body 110 in the first and third directions.

[0099] The multilayer electronic component 100 may include side edge portions 114 and 115 disposed on both side surfaces of the capacitance forming portion Ac in the third direction.

[0100] More specifically, the side edge portions 114 and 115 may include a first side edge portion 114 disposed on one side surface of the capacitance forming portion Ac in the third direction and a second side edge portion 115 disposed on the other side surface of the capacitance forming portion Ac in the third direction.

[0101] like Figure 4 As shown in , the side edge portions 114 and 115 may refer to regions between both end surfaces of the first and second internal electrodes 121 and 122 in the third direction and the outer surface of the body 110 with respect to the cross sections of the body 110 in the first and third directions.

[0102] The side margin portions 114 and 115 may be formed by coating a conductive paste on the areas of the ceramic green sheet except for the areas where the side margin portions 114 and 115 are to be formed to form the internal electrodes 121 and 122. In addition, in order to prevent the step difference caused by the internal electrodes 121 and 122, the side margin portions 114 and 115 may be formed by cutting the laminate so that the internal electrodes 121 and 122 are exposed to both side surfaces of the capacitance forming portion Ac in the third direction, and stacking a single dielectric layer or two or more dielectric layers along the third direction on both side surfaces of the capacitance forming portion Ac in the third direction.

[0103] The side margin parts 114 and 115 may prevent damage to the internal electrodes 121 and 122 due to physical stress or chemical stress.

[0104] The first side margin portion 114 and the second side margin portion 115 do not include the internal electrodes 121 and 122, and may include the same material as that of the dielectric layer 111. That is, the first side margin portion 114 and the second side margin portion 115 may include a ceramic material, for example, barium titanate (BaTiO 3 ) based ceramic materials.

[0105] The width wm of the first side margin portion 114 and the second side margin portion 115 may not be limited to any specific example.

[0106] However, in order to easily achieve miniaturization and high capacitance of the multilayer electronic component 100, the width wm of the side edge portions 114 and 115 may be 100 μm or less, preferably 30 μm or less, and in ultra-small products, the width wm of the side edge portions 114 and 115 may be more preferably 20 μm or less.

[0107] Here, the width wm of the side edge portions 114 and 115 may refer to the size of the side edge portions 114 and 115 in the third direction. In addition, the width wm of the side edge portions 114 and 115 may refer to the average width wm of the side edge portions 114 and 115, and the width wm of the side edge portions 114 and 115 may refer to the average size of the side edge portions 114 and 115 in the third direction.

[0108] The average size of the side edge portions 114 and 115 in the third direction may be measured by scanning a cross section of the body 110 in the first direction and the third direction using a scanning electron microscope (SEM) at a magnification of 10000. More specifically, the average size of the side edge portions 114 and 115 in the third direction may be an average value calculated by measuring the size of the side edge portions 114 and 115 in the third direction at 10 points spaced at equal distances in the first direction in a scanned image of one of the side edge portions.

[0109] In some example embodiments, the multilayer electronic component 100 may have two external electrodes 131 and 132 , but the number or shape of the external electrodes 131 and 132 may vary depending on the shapes of the internal electrodes 121 and 122 or other purposes.

[0110] The external electrodes 131 and 132 may be disposed on the body 110 , and may be connected to the internal electrodes 121 and 122 .

[0111] More specifically, the external electrodes 131 and 132 may be disposed on the third surface 3 and the fourth surface 4 of the body 110, respectively, and may include a first external electrode 131 and a second external electrode 132 respectively connected to the first internal electrode 121 and the second internal electrode 122. That is, the first external electrode 131 may be disposed on the third surface 3 of the body 110 and may be connected to the first internal electrode 121, and the second external electrode 132 may be disposed on the fourth surface 4 of the body 110 and may be connected to the second internal electrode 122.

[0112] In addition, the external electrodes 131 and 132 may extend and be disposed on a portion of the first surface 1 and a portion of the second surface 2 of the body 110, and / or may extend and be disposed on a portion of the fifth surface 5 and a portion of the sixth surface 6 of the body 110. That is, the first external electrode 131 may be disposed on a portion of the first surface 1, a portion of the second surface 2, a portion of the fifth surface 5, and a portion of the sixth surface 6 of the body 110, and the third surface 3 of the body 110, and the second external electrode 132 may be disposed on a portion of the first surface 1, a portion of the second surface 2, a portion of the fifth surface 5, and a portion of the sixth surface 6 of the body 110, and the fourth surface 4 of the body 110.

[0113] The external electrodes 131 and 132 may be formed using any material having conductivity, such as metal, and a specific material may be determined in consideration of electrical characteristics and structural stability, and may have a multi-layered structure.

[0114] For example, the external electrodes 131 and 132 may include an electrode layer disposed on the body 110 and a plating layer disposed on the electrode layer.

[0115] For a more specific example of the electrode layer, the electrode layer may include first electrode layers 131a and 132a and / or second electrode layers 131b and 132b, the first electrode layers 131a and 132a are fired electrodes including a first conductive metal and glass, and the second electrode layers 131b and 132b are resin-based electrodes including a second conductive metal and resin.

[0116] Here, the conductive metal included in the first electrode layers 131a and 132a may be referred to as a first conductive metal, and the conductive metal included in the second electrode layers 131b and 132b may be referred to as a second conductive metal. In this case, the first conductive metal and the second conductive metal may be the same as or different from each other, and when the first conductive metal and the second conductive metal each include a plurality of conductive metals, a portion of the first conductive metal and a portion of the second conductive metal may be the same conductive metal, but example embodiments thereof are not limited.

[0117] In addition, the first electrode layers 131 a and 132 a and the second electrode layers 131 b and 132 b may be formed by sequentially disposing a fired electrode and a resin-based electrode on the body 110 .

[0118] In addition, the first electrode layers 131a and 132a and the second electrode layers 131b and 132b may be formed by transferring a sheet including a conductive metal onto a body or transferring a sheet including a conductive metal onto a fired electrode.

[0119] A material having excellent conductivity may be used as the conductive metal included in the first electrode layers 131a and 132a and the second electrode layers 131b and 132b. For example, the conductive metal may include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof, but example embodiments thereof are not limited thereto.

[0120] In some embodiments, the external electrodes 131 and 132 may have a double-layer structure including first electrode layers 131a and 132a and second electrode layers 131b and 132b, and thus, the external electrodes 131 and 132 may include first electrode layers 131a and 132a and second electrode layers 131b and 132b, the first electrode layers 131a and 132a including a first conductive metal and glass, and the second electrode layers 131b and 132b are disposed on the first electrode layers 131a and 132a and including a second conductive metal and resin.

[0121] The first electrode layers 131 a and 132 a may improve bonding with the body 110 by including glass, and the second electrode layers 131 b and 132 b may improve warping strength by including resin.

[0122] The first conductive metal included in the first electrode layers 131a and 132a is not limited to any specific example as long as the material can be electrically connected to the internal electrodes 121 and 122 to form a capacitor, and for example, the first conductive metal may include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0123] The first electrode layers 131 a and 132 a may be formed by coating a conductive paste prepared by adding glass frit to first conductive metal particles and firing the conductive paste.

[0124] The second conductive metal included in the second electrode layers 131 b and 132 b may electrically connect the second electrode layers 131 b and 132 b to the first electrode layers 131 a and 132 a , respectively.

[0125] The conductive metal included in the second electrode layers 131 b and 132 b is not limited to any specific example as long as the material can be electrically connected to the first electrode layers 131 a and 132 a, and the second electrode layers 131 b and 132 b may include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0126] The second conductive metal included in the second electrode layers 131b and 132b may include one or more of spherical particles and flake-type particles. In other words, the second conductive metal may include only flake-type particles, only spherical particles, or may include a mixture of flake-type particles and spherical particles. Here, the spherical particles may include an incomplete spherical shape, for example, a shape in which the length ratio of the major axis to the minor axis (major axis / minor axis) is 1.45 or less. Flake-type particles may refer to particles having a flat and elongated shape, and are not limited to any specific example, and for example, the length ratio between the major axis and the minor axis (major axis / minor axis) may be 1.95 or greater. The lengths of the major axis and the minor axis of the spherical particles and the flake-type particles may be measured from an image obtained by scanning a cross section in the first direction and the second direction taken at the center portion in the third direction of a multilayer electronic component using a scanning electron microscope (SEM).

[0127] The resin included in the second electrode layers 131b and 132b may ensure bonding and may absorb impact. The resin included in the second electrode layers 131b and 132b is not limited to any specific example as long as the resin has bonding and impact absorption and can be mixed with the second conductive metal particles to prepare a paste, and for example, the resin included in the second electrode layers 131b and 132b may include epoxy resin.

[0128] In addition, the second electrode layers 131b and 132b may include a plurality of metal particles, an intermetallic compound, and a resin. By including the intermetallic compound, the electrical connectivity of the second electrode layers 131b and 132b and the first electrode layers 131a and 132a may be improved. The intermetallic compound may improve the electrical connectivity by connecting the plurality of metal particles to each other, and may surround the plurality of metal particles and may connect the metal particles to each other.

[0129] In this case, the intermetallic compound may include a metal having a melting point lower than the solidification temperature of the resin. That is, since the intermetallic compound includes a metal having a melting point lower than the solidification temperature of the resin, the metal having a melting point lower than the solidification temperature of the resin may melt during the drying and solidification process, and may form an intermetallic compound with a portion of the metal particles and may surround the metal particles. In this case, the intermetallic compound may include a low melting point metal, preferably a metal having a melting point lower than 300°C.

[0130] For example, Sn having a melting point of 213° C. to 220° C. may be included. During the drying and hardening process, Sn may melt, and the molten Sn may wet metal particles having a high melting point (such as Ag, Ni, or Cu) by capillary action, may react with a portion of the Ag, Ni, or Cu metal particles, and may form Ag, Ni, or Cu. 3 Sn、Ni 3 Sn 4 , Cu 6 Sn 5 or Cu 3 Intermetallic compounds of Sn. Ag, Ni or Cu not participating in the reaction may remain in the form of metal particles.

[0131] Therefore, the plurality of metal particles in the second electrode layers 131b and 132b may include one or more of Ag, Ni, and Cu, and the intermetallic compound may include Ag. 3 Sn、Ni 3 Sn 4 , Cu 6 Sn 5 and Cu 3 One or more of Sn.

[0132] The plating layers 131c and 132c can improve mounting characteristics.

[0133] The type of the plating layers 131c and 132c is not limited to any specific example, and the plating layers 131c and 132c may be single-layer plating layers 131c and 132c including at least one selected from the group consisting of nickel (Ni), tin (Sn), palladium (Pd), and alloys thereof, and the plating layers 131c and 132c may be formed in multiple layers.

[0134] For a more specific example of the plating layers 131c and 132c, the plating layers 131c and 132c may include a Ni plating layer or a Sn plating layer, or a Ni plating layer and a Sn plating layer may be sequentially formed on the electrode layer, or a Sn plating layer, a Ni plating layer, and a Sn plating layer may be sequentially formed. In addition, the plating layers 131c and 132c may include a plurality of Ni plating layers and / or a plurality of Sn plating layers.

[0135] The size of the multilayer electronic component 100 may not be limited to any particular example.

[0136] However, in order to achieve both miniaturization and high capacitance, it may be necessary to increase the number of stacked bodies by reducing the thickness of the dielectric layer and the internal electrode, so that the effect described in the embodiment can be significant in a multilayer electronic component 100 having a size of 3216 (length × width: 3.2 mm × 1.6 mm) or less.

[0137] Hereinafter, embodiments of the present disclosure will be described in more detail, but the scope of the embodiments is not limited thereto.

[0138] (Test example) [Table 1] lists Q values ​​according to the type and content of the rare earth element as the first subcomponent.

[0139] In each test example, the main component and other auxiliary components were added in the same manner except that the type and content of the first auxiliary component (ie, rare earth element) were applied differently. The content of the first to third auxiliary components was added based on 100 mol of the main component.

[0140] Using dielectric materials (Ca x , Sr 1-x )(Zr y , Ti 1-y ) 3 , CSZT) as a main component (here, x=0.7, y=0.97), based on 100 mol of the CSZT main component, 0.95 mol or more of silicon (Si) is added as a second subcomponent, and based on 100 mol of the CSZT main component, 2.0 mol of manganese (Mn) is added as a third subcomponent.

[0141] In Test Examples 1-1 to 1-4, 0.5 mol, 1.0 mol, 2.0 mol, and 2.6 mol of yttrium (Y) were added based on 100 mol of the CSZT main component, respectively, in Test Examples 2-1 to 2-4, 0.5 mol, 1.0 mol, 2.0 mol, and 2.6 mol of dysprosium (Dy) were added based on 100 mol of the CSZT main component, respectively, and in Test Examples 3-1 to 3-4, 0.5 mol, 1.0 mol, 2.0 mol, and 2.6 mol of terbium (Tb) were added based on 100 mol of the CSZT main component, respectively.

[0142] The Q value of the manufactured sample sheet was measured, and when the Q value was greater than or equal to 10000, the sample was evaluated as good and marked as "O". When the Q value was less than 10000, the sample was evaluated as defective and marked as "X". The Q value was measured using an LCR meter measuring device Keithley's 4268A.

[0143] [Table 1]

[0144] In Test Examples 1-4, 2-4, and 3-4, in which the content of the rare earth element corresponds to 2.6 mol (exceeding 2.0 mol), the measured Q value is less than 10000, and the dielectric loss is relatively large. In Test Examples 1-1 to 1-3, 2-1 to 2-3, and 3-1 to 3-3, in which the content of the rare earth element is less than or equal to 2.0 mol, the measured Q value is greater than or equal to 10000, and the dielectric loss is relatively small.

[0145] Therefore, it is shown that when the content of the rare earth element is 2.0 mol or less based on 100 mol of the CSZT main component, the Q value is not reduced and the dielectric loss is relatively small.

[0146] in addition, Figure 5A is the STEP-IR diagram of Test Example 1-1, Figure 5B is the STEP-IR diagram of Test Example 1-2, Figure 5C This is a STEP-IR chart of Test Example 1-3.

[0147] Fig. 6A is the STEP-IR diagram of Test Example 2-1, Figure 6B This is the STEP-IR diagram of Test Example 2-2. Figure 6C This is a STEP-IR chart of Test Example 2-3.

[0148] The STEP-IR test can determine whether a chip short circuit occurs under severe conditions where the voltage increases by 10V every 5 minutes at a temperature of 150°C, and can indicate whether reliability has improved or deteriorated based on the mean time to failure (MTTF).

[0149] In Test Examples 1-1 and 2-1, in which the content of the rare earth element was 0.5 mol (less than 1.0 mol), the mean time to failure (MTTF), which is the time when a short circuit occurs in the chip, was short, indicating that reliability deteriorated under severe conditions. In Test Examples 1-2, 1-3, 2-2, and 2-3, in which the content of the rare earth element was greater than or equal to 1.0 mol and less than or equal to 2.0 mol, the mean time to failure (MTTF), which is the time when a short circuit occurs in the chip, increased compared to Test Examples 1-1 and 2-1, indicating that reliability was excellent even under severe conditions.

[0150] Therefore, it is shown that when the content of the rare earth element is 1.0 mol or more and 2.0 mol or less based on 100 mol of the CSZT main component, the reliability is excellent.

[0151] It is shown from Test Examples 1-2 to 1-3, 2-2 to 2-3, and 3-2 to 3-3 that when the content of rare earth elements is greater than or equal to 1.0 mol and less than or equal to 2.0 mol based on 100 mol of the CSZT main component, the Q value is excellent and the reliability is also improved, thereby ensuring both high Q performance and reliability required for C0G materials.

[0152] The following [Table 2] lists the sintered density of the sample pieces according to the content of the rare earth element (first subcomponent) and the content of silicon (Si) (second subcomponent).

[0153] In each test example, the main component and the third subcomponent were added in the same manner except that the contents of the first subcomponent (rare earth element) and the second subcomponent (silicon (Si)) were applied differently. The contents of the first to third subcomponents were added based on 100 mol of the main component.

[0154] Using dielectric materials (Ca x , Sr 1-x )(Zr y , Ti 1-y ) 3 , CSZT) (here, x=0.7, y=0.97) as a main component, and 2.0 mol of manganese (Mn) was added as a third subcomponent based on 100 mol of the CSZT main component.

[0155] In Experimental Examples 4-1 to 4-4, 1.0 mol of yttrium (Y) was added based on 100 mol of the CSZT main component, and 0.75 mol, 0.95 mol, 1.15 mol, and 1.35 mol of silicon (Si) were added based on 100 mol of the CSZT main component, respectively.

[0156] In Test Examples 5-1 to 5-4, 2.0 mol of yttrium (Y) was added based on 100 mol of the CSZT main component, and 0.75 mol, 0.95 mol, 1.15 mol, and 1.35 mol of silicon (Si) were added based on 100 mol of the CSZT main component, respectively.

[0157] The average sintered density of the manufactured sample sheets was measured (g / cm 3 ), and when the density is greater than or equal to 4.56g / cm 3 (greater than the theoretical density of CSZT dielectric material 4.8g / cm 3 95% of the sample), the sample was evaluated as good and marked as "O", and when the density was less than 4.56 g / cm 3 When the sample is evaluated as defective and marked with an "X".

[0158] [Table 2]

[0159] Under the condition that the content of the rare earth element satisfies 1.0 mol or more and 2.0 mol or less, in the test examples 4-1 and 5-1 in which the content of silicon (Si) is 0.75 mol, the average sintered density values ​​are measured to be 4.53 g / cm 3 and 4.52g / cm3 , which indicates that the sintered density is not excellent, so that the density of the dielectric microstructure is deteriorated and the dielectric loss is relatively large. Under the condition that the content of the rare earth element satisfies 1.0 mol or more and 2.0 mol or less, in Test Examples 4-2 to 4-4 and 5-2 to 5-4 in which the content of silicon (Si) is greater than or equal to 0.95 mol, the average sintered density value is measured to be greater than or equal to 4.66 g / cm 3 , which indicates that the sintering density is excellent, resulting in excellent dielectric microstructure density and relatively small dielectric loss.

[0160] Therefore, when the content of silicon (Si) is 0.95 mol or more based on 100 mol of the CSZT main component, it can be predicted that the average sintered density value may be excellent and the dielectric loss may be relatively small, thereby ensuring the high Q characteristics required for the C0G material.

[0161] According to the aforementioned embodiments, the multilayer electronic component may have a low equivalent series resistance (ESR).

[0162] Furthermore, multilayer electronic components can have high Q values.

[0163] In addition, multi-layer electronic components can meet C0G characteristics.

[0164] The embodiments do not necessarily limit the scope of the embodiments to specific embodiment forms. On the contrary, variations, equivalents and replacements included in the disclosed concepts and technical scope of this specification may be adopted. Throughout the specification, similar reference numerals are used for similar elements.

[0165] In the embodiments, the terms "embodiment", "multiple embodiments" may not refer to the same embodiment, and may be provided to describe and emphasize different unique features of each embodiment. The proposed embodiment may be implemented without excluding the possibility of combining features with other embodiments. For example, unless otherwise specified, even if a feature described in one embodiment is not described in another embodiment, the description may be understood to be related to another embodiment.

[0166] The terms used in this specification are used to explain the embodiments rather than to limit the present disclosure. Unless explicitly described to the contrary, in this specification, a singular meaning includes a plural meaning.

[0167] While embodiments have been shown and described above, it will be readily apparent to those skilled in the art that modifications and variations may be made without departing from the scope of the present disclosure as defined by the appended claims.

Claims

1. A multilayer electronic component comprising: a body including a dielectric layer and an inner electrode; as well as an outer electrode, disposed on the body, The dielectric layer includes: a main component represented by (Ca, Sr)(Zr, Ti)O3; a first subcomponent including at least one rare earth element selected from the group consisting of Y, Dy and Tb; a second subcomponent including Si; and a third subcomponent including at least one variable valence acceptor element. Wherein, based on 100 moles of the main component, the content of the at least one rare earth element of the first subcomponent is greater than or equal to 1.0 mole and less than or equal to 2.0 moles.

2. The multilayer electronic component according to claim 1, wherein The main component is (Ca x , Sr 1-x )(Zr y , Ti 1-y )O3 indicates that x satisfies 0.5≤x<1.0, and y satisfies 0.950≤y<1.

00.

3. The multilayer electronic component according to claim 1, wherein: The content of Si in the second subcomponent is greater than or equal to 0.95 mol based on 100 mol of the main component.

4. The multilayer electronic component according to claim 3, wherein: The content of Si of the second subcomponent is greater than or equal to 0.95 mol and less than or equal to 1.35 mol based on 100 mol of the main component.

5. The multilayer electronic component according to claim 1, wherein The variable valence acceptor element includes at least one selected from the group consisting of Mn, V, Cr, Fe, Co, Ni, Cu and Zn.

6. The multilayer electronic component according to claim 1, wherein The content of the variable-valence acceptor element of the third subcomponent is 1.0 mol or more and 3.0 mol or less based on 100 mol of the main component.

7. The multilayer electronic component according to claim 1, wherein: The average sintering density of the dielectric layer is greater than or equal to 4.66 g / cm 3 .

8. A multilayer electronic component comprising: a body including a dielectric layer and an inner electrode; as well as an outer electrode, disposed on the body, wherein the dielectric layer comprises a main component and a secondary component, the main component having a perovskite structure represented by ABO3, wherein the A site of the perovskite structure includes at least one of Ca and Sr, and the B site of the perovskite structure includes at least one of Zr and Ti, wherein the subcomponents include: a first subcomponent including at least one rare earth element selected from the group consisting of Y, Dy and Tb; a second subcomponent including Si; and a third subcomponent including a variable valence acceptor element, and Wherein, based on 100 moles of the B site of the perovskite structure, the content of the at least one rare earth element of the first subcomponent is greater than or equal to 1.0 mole and less than or equal to 2.0 moles.

9. The multilayer electronic component according to claim 8, wherein: When the atomic ratio of Ca in the A site of the perovskite structure is defined as x, the atomic ratio of Sr in the A site of the perovskite structure is defined as 1-x, the atomic ratio of Zr in the B site of the perovskite structure is defined as y, and the atomic ratio of Ti in the B site of the perovskite structure is defined as 1-y, x satisfies 0.5≤x<1.0, and y satisfies 0.950≤y<1.

00.

10. The multilayer electronic component according to claim 8, wherein The content of Si of the second subcomponent is greater than or equal to 0.95 mol based on 100 mol of the B site of the perovskite structure.

11. The multilayer electronic component according to claim 10, wherein: The content of Si of the second subcomponent is greater than or equal to 0.95 mol and less than or equal to 1.35 mol based on 100 mol of the B site of the perovskite structure.

12. The multilayer electronic component according to claim 8, wherein The variable valence acceptor element includes at least one selected from the group consisting of Mn, V, Cr, Fe, Co, Ni, Cu and Zn.

13. The multilayer electronic component according to claim 8, wherein: The content of the variable-valence acceptor element of the third subcomponent is greater than or equal to 1.0 mol and less than or equal to 3.0 mol based on 100 mol of the B site of the perovskite structure.

14. The multilayer electronic component according to claim 8, wherein The average sintering density of the dielectric layer is greater than or equal to 4.66 g / cm 3 .

15. A dielectric composition comprising: The main component is represented by (Ca, Sr)(Zr, Ti)O3; The first subcomponent includes at least one rare earth element selected from the group consisting of Y, Dy and Tb, A second subcomponent includes Si; and The third subcomponent includes at least one variable valence acceptor element, Wherein, based on 100 moles of the main component, the content of the at least one rare earth element of the first subcomponent is greater than or equal to 1.0 mole and less than or equal to 2.0 moles.

16. The dielectric composition according to claim 15, wherein The main component is (Ca x , Sr 1-x )(Zr y , Ti 1-y )O3 indicates that x satisfies 0.5≤x<1.0, and y satisfies 0.950≤y<1.

00.

17. The dielectric composition according to claim 15, wherein The content of Si in the second subcomponent is greater than or equal to 0.95 mol based on 100 mol of the main component.

18. The dielectric composition according to claim 15, wherein The content of Si of the second subcomponent is greater than or equal to 0.95 mol and less than or equal to 1.35 mol based on 100 mol of the main component.

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