Radio frequency power amplifier circuit and radio frequency power supply equipment

Abstract

The invention provides a radio frequency power amplifier circuit and radio frequency power equipment, the radio frequency power amplifier circuit comprises an input end, a plurality of electric energy modulation modules and an output end, each electric energy modulation module is connected with a connection point between the input end and the output end, each electric energy modulation module is connected with a first potential point when in a conduction state, and each electric energy modulation module is connected with a second potential point when in a conduction state. And is disconnected from the first potential point when in the disconnected state. Each electric energy modulation module is used for periodically charging and discharging in a conducting state so as to convert direct-current electric energy input by the input end into radio-frequency electric energy, and the radio-frequency electric energy obtained by the electric energy modulation modules in the conducting state is mixed at the output end to obtain target radio-frequency electric energy, the power value of the target radio frequency electric energy changes along with the change of the number of the electric energy modulation modules in the conducting state. Wherein each electric energy modulation module carries out charging and discharging synchronously. The power value of the target radio frequency electric energy output by the radio frequency power amplifier circuit can be flexibly adjusted.

Description

Technical Field

[0001] The present application relates to the field of radio frequency technology, and in particular to a radio frequency power amplifier circuit and a radio frequency power supply device. Background Art

[0002] At present, with the development of radio frequency technology, the application of radio frequency power supply equipment is becoming more and more extensive. When applied to the semiconductor field, new requirements are put forward for the radio frequency power output by the equipment power supply equipment. When the current radio frequency power supply equipment outputs radio frequency power to the plasma load, it is necessary to adjust the power value of the radio frequency power in a timely and rapid manner according to the needs of the plasma load to obtain a better film forming effect. Therefore, how to flexibly adjust the power value of the target radio frequency power output by the radio frequency power amplifier circuit has become an issue that needs to be considered. Summary of the invention

[0003] The present application provides a radio frequency power amplifier circuit and a radio frequency power supply device, which can flexibly adjust the power value of the target radio frequency electric energy output by the radio frequency power amplifier circuit.

[0004] In a first aspect, a radio frequency power amplifier circuit is provided, the radio frequency power amplifier circuit comprising an input end, a plurality of power modulation modules and an output end, each power modulation module being connected to a connection point between the input end and the output end, and each power modulation module being selectively connected to a first potential point, wherein each power modulation module can be in an on state or an off state, each power modulation module being connected to the first potential point when in an on state, and being disconnected from the first potential point when in an off state, wherein the first potential point is used to provide a first potential. The input end is used to input direct current power. Each power modulation module is used to periodically charge and discharge when in an on state, so as to convert the direct current power inputted from the input end into radio frequency power, wherein when at least two power modulation modules are in an on state, the radio frequency power obtained by the power modulation modules in the on state is mixed at the output end to obtain target radio frequency power, and is outputted through the output end, wherein the power value of the target radio frequency power changes according to the number of power modulation modules in the on state. When at least two electric energy modulation modules are in the on state, each electric energy modulation module is charged and discharged synchronously.

[0005] In a possible implementation, each power modulation module includes a power modulation component and a gating component, wherein the power modulation component is connected between the connection point between the input end and the output end and the gating component, and the gating component is selectively connected to the first potential point. The gating component is used to selectively be in an on state or an off state, wherein when the gating component of a certain power modulation module is in an on state, the power modulation module is in an on state, and the corresponding power modulation component is periodically charged and discharged to convert the DC power into the RF power.

[0006] In a possible implementation, the power modulation component includes a radio frequency switch and a modulation capacitor, and the radio frequency switch and the modulation capacitor are connected in parallel between the connection point between the input end and the output end and the gating component. The radio frequency switch is used to periodically turn on and off, and when the gating component of a certain power modulation module is in the on state, the modulation capacitor in the power modulation module is used to discharge when the corresponding gating component is in the on state and the radio frequency switch is on, and to charge when the radio frequency switch is off, so that the corresponding power modulation component is periodically charged and discharged to obtain the radio frequency power.

[0007] In a possible implementation manner, the capacitance value of each modulation capacitor is the same, so that the power value of the radio frequency power obtained by each power modulation component when in a conducting state is the same.

[0008] In a possible implementation, each radio frequency switch is turned on or off synchronously, so that when at least two power modulation modules are in the on state, each modulation capacitor is charged and discharged synchronously.

[0009] In a possible implementation, the gating component includes a gating switch, which is turned on or off so that the corresponding gating component is in an on state or an off state respectively, wherein the number of electric energy modulation modules in the on state changes according to the number of turned-on gating switches.

[0010] In a possible implementation manner, the number of the power modulation modules in the on state is positively correlated with the power value of the target radio frequency power.

[0011] In a possible implementation, the RF power amplifier circuit further includes a choke module, which is connected between the input end and the multiple power modulation modules, and is configured to allow only the DC power input from the input end to pass through.

[0012] In a possible implementation, the RF power amplifier circuit also includes a resonance module, which is connected between the multiple power modulation modules and the output end, and the resonance module is used to filter out harmonic components in the target RF power and output the target RF power after the harmonic components are filtered out through the output end.

[0013] In a second aspect, a radio frequency power supply device is also provided, the radio frequency power supply device comprising a radio frequency power amplifier circuit. The radio frequency power amplifier circuit comprises an input end, a plurality of power modulation modules and an output end, each power modulation module is connected to a connection point between the input end and the output end, and each power modulation module is selectively connected to a first potential point, wherein each power modulation module can be in an on state or an off state, each power modulation module is connected to the first potential point when in the on state, and is disconnected from the first potential point when in the off state, wherein the first potential point is used to provide a first potential. The input end is used to input direct current power. Each power modulation module is used to periodically charge and discharge when in the on state, so as to convert the direct current power inputted from the input end into radio frequency power, wherein when at least two power modulation modules are in the on state, the radio frequency power obtained by the power modulation modules in the on state is mixed at the output end to obtain target radio frequency power, and is output through the output end, wherein the power value of the target radio frequency power changes according to the number of power modulation modules in the on state. When at least two electric energy modulation modules are in the on state, each electric energy modulation module is charged and discharged synchronously.

[0014] The RF power amplifier circuit and RF power supply device of the present application are provided with multiple power modulation modules, and each power modulation module is selectively connected to the first potential point, and each power modulation module is configured to be connected to the first potential point when in the on state, and to be disconnected from the first potential point when in the off state. The power value of the target RF power output by the RF power amplifier circuit can be flexibly adjusted by adjusting the number of power modulation modules in the on state. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the background technology, the drawings required for use in the embodiments of the present application or the background technology will be described below.

[0016] Figure 1 A block diagram of a radio frequency power amplifier circuit in some embodiments of the present application.

[0017] Figure 2 It is a block diagram of the power modulation module in some embodiments of the present application.

[0018] Figure 3Schematic diagram of a circuit of a power modulation module in some embodiments of the present application.

[0019] Figure 4 Another block diagram of a radio frequency power amplifier circuit in some embodiments of the present application.

[0020] Figure 5 It is a block diagram of a choke module in some embodiments of the present application.

[0021] Figure 6 It is a block diagram of a resonance module in some embodiments of the present application.

[0022] Figure 7 It is a block diagram of a radio frequency power supply device in some embodiments of the present application.

[0023] Explanation of the accompanying drawings: 1000, RF power supply equipment, 10, RF power amplifier circuit, N1, connection point, 100, input end, DC, direct current power, 200, power modulation module, 210, power modulation component, S1, RF switch, C1, modulation capacitor, 220, selection component, S2, selection switch, RF1, RF power, RF2, target RF power, 300, output end, E1, first potential point, 400, choke module, Lf, choke inductor, 500, resonance module, Lr, resonance inductor, Cr, resonance capacitor. DETAILED DESCRIPTION

[0024] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0025] In the description of the embodiments of the present application, it should be noted that, unless otherwise clearly specified and limited, the terms "connected" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0026] In the following, the terms "first", "second", etc. are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first", "second", etc. may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present application, unless otherwise specified, "plurality" means two or more.

[0027] In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions. For example, a process, method, system, product, or device that includes a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such process, method, product, or device.

[0028] See also Figure 1 , Figure 1 FIG. 1 is a block diagram of a radio frequency power amplifier circuit in some embodiments of the present application. Figure 1 As shown, the present application provides a radio frequency power amplifier circuit 10, the radio frequency power amplifier circuit 10 includes an input terminal 100, a plurality of power modulation modules 200 and an output terminal 300, each power modulation module 200 is connected to a connection point N1 between the input terminal 100 and the output terminal 300, and each power modulation module 200 is selectively connected to a first potential point E1, wherein each power modulation module 200 can be in an on state or an off state, each power modulation module 200 is connected to the first potential point E1 when in the on state, and is disconnected from the first potential point E1 when in the off state, wherein the first potential point E1 is used to provide a first potential. The input terminal 100 is used to input direct current power DC. Each power modulation module 200 is used to periodically charge and discharge when it is in the on state, so as to convert the direct current power DC inputted from the input terminal 100 into radio frequency power RF1, wherein, when at least two power modulation modules 200 are in the on state, the radio frequency power RF1 obtained by the power modulation modules 200 in the on state is mixed at the output terminal 300 to obtain the target radio frequency power RF2, and is outputted through the output terminal 300, wherein the power value of the target radio frequency power RF2 changes according to the number of power modulation modules 200 in the on state. Wherein, when at least two power modulation modules 200 are in the on state, each power modulation module 200 is charged and discharged synchronously.

[0029] Thus, the above-mentioned RF power amplifier circuit 10 in the present application, by setting up multiple power modulation modules 200, and each power modulation module 200 is selectively connected to the first potential point E1, and each power modulation module 200 is configured to be connected to the first potential point E1 when in the on state, and disconnected from the first potential point E1 when in the off state. By adjusting the number of power modulation modules 200 in the on state, the power value of the target RF power RF2 output by the RF power amplifier circuit 10 can be flexibly adjusted.

[0030] In some embodiments, when one of the power modulation modules 200 is in a conducting state, the radio frequency power RF1 obtained by the power modulation module 200 in the conducting state is the target radio frequency power RF2.

[0031] In some embodiments, the output terminal 300 can be used to connect to a load to output the target radio frequency power RF2 to the load, wherein the load can be a plasma load.

[0032] In some embodiments, the connection point N1 between the input terminal 100 and the output terminal 300 may be any position point on the connection path between the input terminal 100 and the output terminal 300. Figure 1 The multiple connection points N1 shown may be a common point, that is, the voltage value of each connection point N1 is the voltage value of the direct current power DC.

[0033] In some embodiments, the first potential provided by the first potential point E1 may be the same as the potential provided by the ground point, for example, it may be zero potential. In some embodiments, the first potential provided by the first potential point E1 may also be different from the potential provided by the ground point, for example, it may be a negative voltage potential, or a voltage slightly greater than zero, etc., as long as it is less than the voltage at the connection point between the input terminal 100 and the output terminal 300.

[0034] In particular, when at least two power modulation modules 200 are in the on state, each power modulation module 200 is charged and discharged synchronously, so that the phase angle and power value of the radio frequency power RF1 obtained by each power modulation module 200 are the same, so that the power value of the target radio frequency power RF2 mixed at the output end 300 is the sum of the power values ​​of the radio frequency power RF1 obtained by each power modulation module 200.

[0035] Please also read Figure 2 , Figure 2 FIG. 1 is a block diagram of an electric energy modulation module in some embodiments of the present application. Figure 1 , Figure 2 As shown, each power modulation module 200 includes a power modulation component 210 and a gating component 220. The power modulation component 210 is connected between the connection point N1 between the input terminal 100 and the output terminal 300 and the gating component 220. The gating component 220 is selectively connected to the first potential point E1. The gating component 220 is used to selectively be in an on state or an off state. When the gating component 220 of a certain power modulation module 200 is in an on state, the power modulation module 200 is in an on state, and the corresponding power modulation component 210 is periodically charged and discharged to convert the direct current power DC into the radio frequency power RF1.

[0036] Therefore, the above-mentioned RF power amplifier circuit 10 in the present application converts direct current power DC into RF power RF1 by configuring the power modulation module 200 to perform periodic charging and discharging when the corresponding selection module is in the on state.

[0037] Among them, Figure 1 and Figure 2 The DC power and RF power in the figure are all expressed as voltage. Figure 1 For the convenience of explanation, the multiple radio frequency electric energies RF1 are generated by multiple power modulation modules 200, and after being combined, the target radio frequency electric energy RF2 can be obtained. Figure 2 The power modulation module 200 shown in FIG. 1 modulates the direct current power DC at one side of the connection point N1 to be modulated into radio frequency power RF1 and outputted at the other side of the corresponding connection point N1.

[0038] Please also read Figure 3 , Figure 3 FIG. 1 is a circuit diagram of an electric energy modulation module in some embodiments of the present application. Figure 1 , Figure 2 , Figure 3 As shown, the power modulation component 210 includes a radio frequency switch S1 and a modulation capacitor C1, and the radio frequency switch S1 and the modulation capacitor C1 are connected in parallel between the connection point N1 between the input terminal 100 and the output terminal 300 and the gating component 220. The radio frequency switch S1 is used to periodically turn on and off, and when the gating component 220 of a certain power modulation module 200 is in the on state, the modulation capacitor C1 in the power modulation module 200 is used to discharge when the corresponding gating component 220 is in the on state and the radio frequency switch S1 is turned on, and to charge when the radio frequency switch S1 is turned off, so that the corresponding power modulation component 210 is periodically charged and discharged to obtain radio frequency power RF1.

[0039] Therefore, the above-mentioned RF power amplifier circuit 10 in the present application, by setting the power modulation component 210 including the RF switch S1 and the modulation capacitor C1 connected in parallel, can configure the RF switch S1 to be periodically turned on and off, and configure the corresponding modulation capacitor C1 to discharge when the RF switch S1 is turned on, and to charge when the RF switch S1 is turned off, thereby achieving periodic charging and discharging, and obtaining the RF power RF1.

[0040] In some embodiments, the frequency of the switching cycle of the RF switch S1 is the RF frequency.

[0041] Furthermore, the plurality of RF switches S1 may receive an initial RF signal and be periodically turned on and off under the control of the initial RF signal.

[0042] In some embodiments, the capacitance value of each modulation capacitor C1 is the same, so that the power value of the radio frequency power RF1 obtained by each power modulation component 210 when in the on state is the same.

[0043] Furthermore, the capacitance value of each modulation capacitor C1 may satisfy a first preset relationship, wherein the first preset relationship may be related to the angular frequency of the radio frequency power RF1 and the resistance value of the load.

[0044] Further, the capacitance value of the modulation capacitor C1 is less than the first capacitance threshold, so that the power value of the radio frequency power RF1 obtained by each power modulation module 200 is less than the first power threshold, and the number of corresponding power modulation modules 200 is greater than the first number threshold. Among them, the first power threshold can be 10 watts, 100 watts, etc., and the corresponding first number threshold can be 100, 10, etc., so that the power value requirement of the target radio frequency power RF2 can be met according to specific needs, and the adjustment accuracy is high.

[0045] In some embodiments, each RF switch S1 is turned on or off synchronously, so that when at least two power modulation modules 200 are in the on state, each modulation capacitor C1 is charged and discharged synchronously.

[0046] Therefore, the above-mentioned RF power amplifier circuit 10 in the present application is configured to have the same capacitance value of each modulation capacitor C1 and each RF switch S1 to be turned on or off synchronously in order to make the phase angle and power value of the RF power RF1 obtained by each power modulation module 200 the same, so that each modulation capacitor C1 can be charged and discharged synchronously, and the power value of the RF power RF1 obtained by each power modulation component 210 when in the on state is the same.

[0047] like Figure 1 , Figure 2 , Figure 3 As shown, the gating component 220 includes a gating switch S2, which is turned on or off so that the corresponding gating component 220 is in an on state or an off state respectively, wherein the number of the electric energy modulation modules 200 in the on state changes according to the number of the gating switches S2 that are turned on.

[0048] Therefore, the above-mentioned RF power amplifier circuit 10 in the present application configures the gating component 220 to include a gating switch S2 to achieve that the gating component 220 is in an on state or an off state respectively.

[0049] The number of the power modulation modules 200 in the on state is positively correlated with the power value of the target radio frequency power RF2.

[0050] Therefore, in the above-mentioned RF power amplifier circuit 10 of the present application, as the number of power modulation modules 200 in the on state increases, the power value of the target RF power RF2 increases accordingly, and as the number of power modulation modules 200 in the on state decreases, the power value of the target RF power RF2 decreases accordingly.

[0051] See also Figure 4 , Figure 4 FIG. 1 is another block diagram of a radio frequency power amplifier circuit in some embodiments of the present application. Figure 4 As shown, the RF power amplifier circuit 10 further includes a choke module 400 , which is connected between the input terminal 100 and the plurality of power modulation modules 200 , and is used to allow only direct current power DC input from the input terminal 100 to pass through.

[0052] Please also read Figure 5 , Figure 5 FIG. 1 is a block diagram of a choke module in some embodiments of the present application. Figure 4 , Figure 5 As shown, the choke module 400 may include a choke inductor Lf, one end of the choke inductor Lf is connected to the input end 100, and the other end of the choke inductor Lf is connected to the resonance module 500 and each power modulation module 200; wherein the direct current power DC inputted from the input end 100 is allowed to be transmitted to each power modulation module 200 through the choke inductor Lf, and the at least one radio frequency power RF1 obtained by the power modulation module 200 in the on state according to the direct current power DC is prohibited from being transmitted to the input end 100 through the choke inductor Lf.

[0053] Therefore, the above-mentioned RF power amplifier circuit 10 in the present application, by setting the choke module 400 including the choke inductor Lf, can prevent the RF power RF1 from being transmitted to the input end 100 through the choke inductor Lf by utilizing the characteristics of the choke inductor Lf that passes DC but blocks AC.

[0054] like Figure 4 As shown, the RF power amplifier circuit 10 also includes a resonance module 500, which is connected between the multiple power modulation modules 200 and the output terminal 300. The resonance module 500 is used to filter out the harmonic components in the target RF power RF2, and output the target RF power RF2 after the harmonic components are filtered out through the output terminal 300.

[0055] Furthermore, the resonance module 500 can also be connected to the choke module 400. The resonance module 500 is connected to each power modulation module 200 to mix the RF power RF1 obtained by the power modulation module 200 in the on state in the resonance module 500 to obtain the target RF power RF2.

[0056] Please also read Figure 6 , Figure 6 FIG. 1 is a block diagram of a resonance module in some embodiments of the present application. Figure 4 , Figure 6As shown, the resonance module 500 may include a resonance inductor Lr and a resonance capacitor Cr, which are connected in series between the choke module 400 and the output end 300, and the resonance inductor Lr or the resonance capacitor Cr is connected to each power modulation module 200 to mix the radio frequency power RF1 obtained by the power modulation module 200 in the on state with the resonance inductor Lr or the resonance capacitor Cr to obtain the target radio frequency power RF2; wherein the resonance inductor Lr and the resonance capacitor Cr have a resonance frequency, and the resonance inductor Lr and the resonance capacitor Cr are used to filter out the harmonic components in the target radio frequency power RF2 according to the resonance frequency.

[0057] Therefore, the above-mentioned radio frequency power amplifier circuit 10 in the present application can filter out the harmonic components in the target radio frequency power RF2 according to the resonance frequency by setting an LC series resonance circuit composed of a resonance inductor Lr and a resonance capacitor Cr.

[0058] In some embodiments, the RF power amplifier circuit 10 may further include a control unit. Figure 3 Each of the gate switches S2 shown is connected, and the control unit is used to control the on or off of each of the gate switches S2 so that the power value of the target radio frequency electric energy RF2 is the target power value.

[0059] In some embodiments, the control unit can be a general-purpose processor such as a central processing unit (CPU), or a digital signal processor (DSP), an application specific integrated circuit (ASIC), a field programmable gate array (FPGA) or other programmable logic devices, discrete gate logic devices, transistor logic devices and other logic control devices, or a microprocessor such as a micro control unit (MCU).

[0060] The RF power amplifier circuit 10 of the present application, through the above-mentioned structure, can flexibly adjust the power value of the target RF power RF2 output by the RF power amplifier circuit 10 according to the needs of the plasma load at different stages, so as to achieve a better film forming effect.

[0061] See also Figure 7 , Figure 7 FIG. 1 is a block diagram of a radio frequency power supply device in some embodiments of the present application. Figure 7 As shown, the present application further provides a radio frequency power supply device 1000, and the radio frequency power supply device 1000 includes the radio frequency power amplifier circuit 10 in any of the aforementioned embodiments.

[0062] Please refer again Figure 1 .like Figure 1 As shown, the RF power amplifier circuit 10 includes an input terminal 100, a plurality of power modulation modules 200 and an output terminal 300, each power modulation module 200 is connected to a connection point N1 between the input terminal 100 and the output terminal 300, and each power modulation module 200 is selectively connected to a first potential point E1, wherein each power modulation module 200 can be in an on state or an off state, each power modulation module 200 is connected to the first potential point E1 when in the on state, and is disconnected from the first potential point E1 when in the off state, wherein the first potential point E1 is used to provide a first potential. The input terminal 100 is used to input direct current power DC. Each power modulation module 200 is used to periodically charge and discharge when it is in the on state, so as to convert the direct current power DC inputted from the input terminal 100 into radio frequency power RF1, wherein, when at least two power modulation modules 200 are in the on state, the radio frequency power RF1 obtained by the power modulation modules 200 in the on state is mixed at the output terminal 300 to obtain the target radio frequency power RF2, and is outputted through the output terminal 300, wherein the power value of the target radio frequency power RF2 changes according to the number of power modulation modules 200 in the on state. Wherein, when at least two power modulation modules 200 are in the on state, each power modulation module 200 is charged and discharged synchronously.

[0063] The more specific structure of the RF power amplifier circuit 10 can refer to the relevant content of the RF power amplifier circuit 10 in any of the aforementioned embodiments, which will not be repeated here.

[0064] In some embodiments, the RF power supply device 1000 may further include a crystal oscillator source, which is connected to each power modulation module 200 and is used to generate an initial RF signal.

[0065] In some embodiments, the RF power supply device 1000 may further include a DC source, which is connected to the input terminal 100 and is used to output DC power DC.

[0066] The RF power amplifier circuit 10 and the RF power supply device 1000 of the present application, through the above structure, can flexibly adjust the power value of the target RF power RF2 output by the RF power amplifier circuit 10 according to the needs of the plasma load at different stages, so as to achieve a better film forming effect.

[0067] The above description is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application; in the absence of conflict, the embodiments of the present application and the features in the embodiments can be combined with each other. Therefore, the protection scope of the present application shall be based on the protection scope of the claims.

Claims

1. A radio frequency power amplifier circuit, characterized in that: The device comprises an input terminal, a plurality of electric energy modulation modules and an output terminal, each electric energy modulation module is connected to a connection point between the input terminal and the output terminal, and each electric energy modulation module is selectively connected to a first potential point, wherein each electric energy modulation module can be in an on state or an off state, each electric energy modulation module is connected to the first potential point when in the on state, and is disconnected from the first potential point when in the off state, wherein the first potential point is used to provide a first potential; The input end is used to input direct current power; Each power modulation module is used to periodically charge and discharge when in a conducting state, so as to convert the DC power inputted from the input end into radio frequency power, wherein when at least two power modulation modules are in a conducting state, the radio frequency power obtained by the power modulation modules in the conducting state is mixed at the output end to obtain target radio frequency power, and is outputted through the output end, wherein the power value of the target radio frequency power changes according to the number of power modulation modules in the conducting state; When at least two electric energy modulation modules are in the on state, each electric energy modulation module is charged and discharged synchronously.

2. The radio frequency power amplifier circuit according to claim 1, characterized in that: Each electric energy modulation module comprises an electric energy modulation component and a gating component, wherein the electric energy modulation component is connected between the connection point between the input end and the output end and the gating component, and the gating component is selectively connected to the first potential point; The gating component is used to selectively be in an on state or an off state, wherein when the gating component of a certain electric energy modulation module is in an on state, the electric energy modulation module is in an on state, and the corresponding electric energy modulation component is periodically charged and discharged to convert the DC power into the RF power.

3. The radio frequency power amplifier circuit according to claim 2, characterized in that: The electric energy modulation component comprises a radio frequency switch and a modulation capacitor, wherein the radio frequency switch and the modulation capacitor are connected in parallel between a connection point between the input end and the output end and the gating component; The RF switch is used to periodically turn on and off, and when the gating component of a certain power modulation module is in the on state, the modulation capacitor in the power modulation module is used to discharge when the corresponding gating component is in the on state and the RF switch is on, and to charge when the RF switch is off, so that the corresponding power modulation component is periodically charged and discharged to obtain the RF power.

4. The radio frequency power amplifier circuit according to claim 3, characterized in that: The capacitance value of each modulation capacitor is the same, so that the power value of the radio frequency power obtained by each power modulation component when in the on state is the same.

5. The radio frequency power amplifier circuit according to claim 3, characterized in that: Each radio frequency switch is turned on or off synchronously, so that when at least two electric energy modulation modules are in the on state, each modulation capacitor is charged and discharged synchronously.

6. The radio frequency power amplifier circuit according to claim 2, characterized in that: The gating component includes a gating switch, which is turned on or off so that the corresponding gating component is in an on state or an off state respectively, wherein the number of electric energy modulation modules in the on state changes according to the number of turned-on gating switches.

7. The radio frequency power amplifier circuit according to claim 1, characterized in that: The number of the power modulation modules in the on state is positively correlated with the power value of the target radio frequency power.

8. The radio frequency power amplifier circuit according to claim 1, characterized in that: The radio frequency power amplifier circuit also includes a choke module, which is connected between the input end and the multiple power modulation modules, and is used for allowing only the direct current power input from the input end to pass through.

9. The radio frequency power amplifier circuit according to claim 1, characterized in that: The RF power amplifier circuit also includes a resonance module, which is connected between the multiple power modulation modules and the output end. The resonance module is used to filter out harmonic components in the target RF power and output the target RF power after the harmonic components are filtered out through the output end.

10. A radio frequency power supply device, characterized in that: It comprises a direct current source and a radio frequency power amplifier circuit as described in any one of claims 1 to 9.

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