Radio frequency power amplifier circuit and radio frequency power supply equipment
By designing an adjustable electric energy modulation module in the RF amplifier circuit, periodically charging and discharging, converting DC power into RF power, solving the problem of difficulty in adjusting the RF power value in the prior art, and achieving flexible adjustment of the RF power value and better film formation effect.
Patent Information
- Application Number
- CN202510111985.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-24
- Publication Date
- 2025-05-23
AI Technical Summary
When existing RF power supplies output RF power to plasma loads, it is difficult to flexibly adjust the power value of RF power, affecting the film formation effect.
A radio frequency amplifier circuit is designed, including an input terminal, an electrical energy modulation module and an output terminal. The electrical energy modulation module periodically charges and discharges through an adjustable first capacitance value and multiple connection states, converts DC power into target radio frequency power, and outputs it through the output terminal.
It realizes flexible adjustment of the target RF electrical power value output by the RF amplifier circuit, meets the needs of plasma load at different stages, and improves the film formation effect.
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Figure CN120034138A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of radio frequency technology, and in particular to a radio frequency power amplifier circuit and a radio frequency power supply device. Background Art
[0002] At present, with the development of radio frequency technology, the application of radio frequency power supply equipment is becoming more and more extensive. When applied to the semiconductor field, new requirements are put forward for the radio frequency power output by the equipment power supply equipment. When the current radio frequency power supply equipment outputs radio frequency power to the plasma load, it is necessary to adjust the power value of the radio frequency power in a timely and rapid manner according to the needs of the plasma load to obtain a better film forming effect. Therefore, how to flexibly adjust the power value of the target radio frequency power output by the radio frequency power amplifier circuit has become an issue that needs to be considered. Summary of the invention
[0003] The present application provides a radio frequency power amplifier circuit and a radio frequency power supply device, which can flexibly adjust the power value of the target radio frequency electric energy output by the radio frequency power amplifier circuit.
[0004] In a first aspect, a radio frequency power amplifier circuit is provided, the radio frequency power amplifier circuit comprising an input end, a power modulation module and an output end, the power modulation module being connected between a connection point between the input end and the output end and a first potential point, wherein the first potential point is used to provide a first potential. The input end is used to input direct current power. The power modulation module is used to periodically charge and discharge to convert the direct current power into target radio frequency power, and output the target radio frequency power through the output end. The power modulation module has an adjustable first capacitance value and multiple connection states corresponding to multiple different first capacitance values, the power modulation module is in a corresponding connection state at least according to the first capacitance value, so that the power value of the target radio frequency power obtained by periodically charging and discharging the power modulation module is a corresponding power value.
[0005] In a possible implementation, the electric energy modulation module includes a plurality of gating components and an electric energy modulation component, each of which is connected to the connection point between the input end and the output end, and is selectively connected to the first potential point, and the electric energy modulation component is connected between the connection point between the input end and the output end and the first potential point. The electric energy modulation component has an adjustable first capacitance value, and the electric energy modulation component is used to cooperate with at least one gating component to periodically charge and discharge to convert the DC power into the target RF power. Each gating component is used to connect to the first potential point when in the on state, and to disconnect from the first potential point when in the off state. The electric energy modulation module is in different connection states at least according to the difference in the first capacitance value and the difference in the number of gating components in the on state, so that the power value of the target RF power converted by the electric energy modulation module is different.
[0006] In a possible embodiment, the RF power amplifier circuit also includes a controller, which is connected to each gating component and the electric energy modulation component. The controller is used to adjust the first capacitance value of the electric energy modulation component, and determine the number of gating components in the on state at least based on the first capacitance value, and control a corresponding number of gating components to be in the on state, so that the electric energy modulation module is in a corresponding connection state.
[0007] In one possible implementation, the controller is used to determine a target number of gating components in a conductive state based on a relationship between the first capacitance value and a preset capacitance value, and to control the target number of gating components to be in a connected state, thereby placing the electric energy modulation module in a corresponding connected state.
[0008] In a possible implementation, when the ratio of the first capacitance value to the preset capacitance value is greater than or equal to N-1 and less than N, the controller determines that the number of gating components in the on state is N, where N≥1 and N is an integer.
[0009] In a possible implementation, the gating component includes a radio frequency switch and a gating switch, wherein the radio frequency switch and the gating switch are connected in series between a connection point between the input end and the output end and the first potential point. Each radio frequency switch is used to be turned on and off periodically, and each radio frequency switch is turned on or off synchronously. The gating switch is turned on or off, so that the corresponding gating component is in an on state or an off state accordingly.
[0010] In a possible implementation, the power modulation component includes a modulation capacitor, which is used to discharge when at least one gating component is in a conducting state and when each RF switch of the at least one gating component in the conducting state is turned on, and to charge when each RF switch of the at least one gating component in the conducting state is turned off, so that the power modulation component is periodically charged and discharged to obtain the target RF power. The modulation capacitor has an adjustable capacitance value, and the adjustable capacitance value of the modulation capacitor is the adjustable first capacitance value of the power modulation module.
[0011] In a possible implementation, the RF power amplifier circuit further includes a choke module, which is connected between the input end and the power modulation module, and is configured to allow only the DC power input from the input end to pass through.
[0012] In a possible implementation, the RF power amplifier circuit also includes a resonance module, which is connected between the power modulation module and the output end. The resonance module is used to filter out harmonic components in the target RF power and output the target RF power after the harmonic components are filtered out through the output end.
[0013] In the second aspect, a radio frequency power supply device is also provided, and the radio frequency power supply device includes a radio frequency power amplifier circuit. The radio frequency power amplifier circuit includes an input end, a power modulation module and an output end, and the power modulation module is connected between the connection point between the input end and the output end and a first potential point, wherein the first potential point is used to provide a first potential. The input end is used to input direct current power. The power modulation module is used to periodically charge and discharge to convert the direct current power into target radio frequency power, and output the target radio frequency power through the output end. The power modulation module has an adjustable first capacitance value and multiple connection states corresponding to multiple different first capacitance values, and the power modulation module is in a corresponding connection state at least according to the first capacitance value, so that the power value of the target radio frequency power obtained by the periodic charging and discharging of the power modulation module is a corresponding power value.
[0014] The RF power amplifier circuit and RF power supply device of the present application convert DC power into target RF power by setting a power modulation module to charge and discharge periodically, and the power modulation module is in a corresponding connection state according to an adjustable first capacitance value, so that the power value of the target RF power obtained by the power modulation module periodically charging and discharging is a corresponding power value, thereby flexibly adjusting the power value of the target RF power output by the RF power amplifier circuit. BRIEF DESCRIPTION OF THE DRAWINGS
[0015] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the background technology, the drawings required for use in the embodiments of the present application or the background technology will be described below.
[0016] Figure 1 A block diagram of a radio frequency power amplifier circuit in some embodiments of the present application.
[0017] Figure 2 It is a block diagram of the power modulation module in some embodiments of the present application.
[0018] Figure 3 Schematic diagram of the circuit of the gating component and the power modulation component in some embodiments of the present application.
[0019] Figure 4 Another block diagram of a radio frequency power amplifier circuit in some embodiments of the present application.
[0020] Figure 5 It is a block diagram of a choke module in some embodiments of the present application.
[0021] Figure 6 It is a block diagram of a resonance module in some embodiments of the present application.
[0022] Figure 7 It is a block diagram of a radio frequency power supply device in some embodiments of the present application.
[0023] Explanation of the accompanying drawings: 1000, RF power supply equipment, 10, RF power amplifier circuit, N1, connection point, 100, input end, DC, direct current power, 200, power modulation module, 210, selection component, S1, RF switch, S2, selection switch, 220, power modulation component, C1, modulation capacitor, RF1, target RF power, 300, output end, E1, first potential point, 400, controller, 500, choke module, Lf, choke inductor, 600, resonance module, Lr, resonance inductor, Cr, resonance capacitor. DETAILED DESCRIPTION
[0024] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.
[0025] In the description of the embodiments of the present application, it should be noted that, unless otherwise clearly specified and limited, the terms "connected" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.
[0026] In the following, the terms "first", "second", etc. are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first", "second", etc. may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present application, unless otherwise specified, "plurality" means two or more.
[0027] In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions. For example, a process, method, system, product, or device that includes a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such process, method, product, or device.
[0028] See also Figure 1 , Figure 1 FIG. 1 is a block diagram of a radio frequency power amplifier circuit in some embodiments of the present application. Figure 1 As shown, the present application provides a radio frequency power amplifier circuit 10, the radio frequency power amplifier circuit 10 includes an input terminal 100, an electric energy modulation module 200 and an output terminal 300, the electric energy modulation module 200 is connected between a connection point N1 between the input terminal 100 and the output terminal 300 and a first potential point E1, wherein the first potential point E1 is used to provide a first potential. The input terminal 100 is used to input direct current power DC. The electric energy modulation module 200 is used to periodically charge and discharge to convert the direct current power DC into a target radio frequency power RF1, and output the target radio frequency power RF1 through the output terminal 300. Among them, the electric energy modulation module 200 has an adjustable first capacitance value and has multiple connection states corresponding to multiple different first capacitance values. The electric energy modulation module 200 is in a corresponding connection state at least according to the first capacitance value, so that the power value of the target radio frequency power RF1 obtained by the periodic charging and discharging of the electric energy modulation module 200 is a corresponding power value.
[0029] Thus, the above-mentioned RF power amplifier circuit 10 in the present application, by setting the power modulation module 200 to be periodically charged and discharged, so as to convert the direct current power DC into the target RF power RF1, and the power modulation module 200 is in a corresponding connection state according to the adjustable first capacitance value, so that the power value of the target RF power RF1 obtained by the periodic charging and discharging of the power modulation module 200 is the corresponding power value, thereby flexibly adjusting the power value of the target RF power RF1 output by the RF power amplifier circuit 10.
[0030] In some embodiments, the output terminal 300 may be connected to a load to output the target radio frequency power RF1 to the load, wherein the load may be a plasma load.
[0031] In some embodiments, the connection point N1 between the input terminal 100 and the output terminal 300 may be any position point on the connection path between the input terminal 100 and the output terminal 300. Figure 1 The multiple connection points N1 shown may be a common point, that is, the voltage value of each connection point N1 is the voltage value of the direct current power DC.
[0032] In some embodiments, the first potential provided by the first potential point E1 may be the same as the potential provided by the ground point, for example, it may be zero potential. In some embodiments, the first potential provided by the first potential point E1 may also be different from the potential provided by the ground point, for example, it may be a negative voltage potential, or a voltage slightly greater than zero, etc., as long as it is less than the voltage at the connection point between the input terminal 100 and the output terminal 300.
[0033] Please also read Figure 2 , Figure 2 FIG. 1 is a block diagram of an electric energy modulation module in some embodiments of the present application. Figure 1 , Figure 2As shown, the electric energy modulation module 200 includes multiple selection components 210 and an electric energy modulation component 220. Each selection component 210 is connected to the connection point N1 between the input terminal 100 and the output terminal 300, and is selectively connected to the first potential point E1. The electric energy modulation component 220 is connected between the connection point N1 between the input terminal 100 and the output terminal 300 and the first potential point E1. Among them, the power modulation component 220 has an adjustable first capacitance value, and the power modulation component 220 is used to cooperate with at least one selection component 210 to periodically charge and discharge to convert direct current power DC into target radio frequency power RF1. Each selection component 210 is used to connect to the first potential point E1 when it is in the on state, and to disconnect from the first potential point E1 when it is in the off state. Among them, at least according to the different first capacitance values, the number of selection components 210 in the on state is different, so that the power modulation module 200 is in different connection states, so that the power value of the target radio frequency power RF1 converted by the power modulation module 200 is different.
[0034] Thus, the above-mentioned RF power amplifier circuit 10 in the present application, by configuring the power modulation component 220 to have an adjustable first capacitance value, and cooperating with at least one gating component 210 to perform periodic charging and discharging, so as to realize the conversion of direct current power DC into target RF power RF1, and by configuring each gating component 210 to be selectively connected to the first potential point E1, and at least according to the difference in the first capacitance value, the number of gating components 210 in the on state is different, so that the power modulation module 200 is in different connection states, and multiple gating components 210 can cooperate with the power modulation component 220 to obtain the target RF power RF1 with a corresponding power value.
[0035] like Figure 2 As shown, the RF power amplifier circuit 10 also includes a controller 400, which is connected to each gating component 210 and the electric energy modulation component 220. The controller 400 is used to adjust the first capacitance value of the electric energy modulation component 220, and determine the number of gating components 210 in the on state at least based on the first capacitance value, and control the corresponding number of gating components 210 to be in the on state, so that the electric energy modulation module 200 is in a corresponding connection state.
[0036] Thus, the above-mentioned RF power amplifier circuit 10 of the present application is connected to each selection component 210 and the power modulation component 220 by setting the controller 400, and configuring the controller 400 to adjust the first capacitance value of the power modulation component 220, and determine the number of selection components 210 in the on state at least according to the first capacitance value, and control the corresponding number of selection components 210 to be in the on state, so that the power modulation module 200 is in the corresponding connection state, so as to obtain the target RF power RF1 with the corresponding power value.
[0037] In some embodiments, the controller 400 is used to determine the target number of gating components 210 in the on state based on the relationship between the first capacitance value and the preset capacitance value, and control the target number of gating components 210 to be in the connected state, so that the power modulation module 200 is in the corresponding connected state.
[0038] Furthermore, the preset capacitance value is related to the angular frequency of the target radio frequency power RF1 and the resistance value of the load. For example, the preset capacitance value may be equal to 8 / [π×(π 2 +4)×ω×R], where π is pi, ω is the angular frequency of the target RF power RF1, and R is the resistance value of the load.
[0039] In some embodiments, when the ratio of the first capacitance value to the preset capacitance value is greater than or equal to N-1 and less than N, the controller 400 determines that the number of the gating components 210 in the on state is N, where N≥1 and N is an integer.
[0040] Therefore, when the power value of the target RF power energy RF1 needs to be adjusted, the above-mentioned RF power amplifier circuit 10 of the present application not only needs to adjust the first capacitance value, but also needs to provide a sufficient number of selection components 210 in the on state according to the multiple relationship between the first capacitance value and the preset capacitance value, so that the power value of the target RF power RF1 is the corresponding power value.
[0041] Please also read Figure 3 , Figure 3 Schematic diagram of the circuit of the gating component and the power modulation component in some embodiments of the present application. Figure 1 , Figure 2 , Figure 3 As shown, the gating component 210 includes a radio frequency switch S1 and a gating switch S2, and the radio frequency switch S1 and the gating switch S2 are connected in series between the connection point N1 between the input terminal 100 and the output terminal 300 and the first potential point E1. Each radio frequency switch S1 is used to be turned on and off periodically, and each radio frequency switch S1 is turned on or off synchronously. When the gating switch S2 is turned on or off, the corresponding gating component 210 is in the on state or the off state accordingly.
[0042] Thus, the above-mentioned RF power amplifier circuit 10 in the present application, by setting the gating component 210 to include an RF switch S1 and a gating switch S2 connected in sequence, can provide a corresponding number of RF switches S1 according to the needs of the first capacitance value of the electric energy modulation component 220 by turning on or off the gating switch S2, and configure each RF switch S1 to be periodically turned on and off, and each RF switch S1 is turned on or off synchronously to cooperate in obtaining the target RF power RF1.
[0043] In some embodiments, the frequency of the switching cycle of the RF switch S1 is the RF frequency.
[0044] Furthermore, the plurality of RF switches S1 may receive an initial RF signal and be periodically turned on and off under the control of the initial RF signal.
[0045] like Figure 1 , Figure 2 , Figure 3 As shown, the power modulation component 220 includes a modulation capacitor C1, which is used to discharge when at least one gating component 210 is in the on state and when each RF switch S1 of at least one gating component 210 in the on state is turned on, and to charge when each RF switch S1 of at least one gating component 210 in the on state is turned off, so that the power modulation component 220 is periodically charged and discharged to obtain the target RF power RF1. Among them, the modulation capacitor C1 has an adjustable capacitance value, and the adjustable capacitance value of the modulation capacitor C1 is the adjustable first capacitance value of the power modulation module 200.
[0046] Therefore, the above-mentioned RF power amplifier circuit 10 in the present application, by configuring the power modulation component 220 to include a modulation capacitor C1, can achieve periodic charging and discharging, and specifically because the modulation capacitor C1 has an adjustable capacitance value, the adjustable first capacitance value of the power modulation module 200 is the adjustable capacitance value of the adjustable capacitor.
[0047] See also Figure 4 , Figure 4 FIG. 1 is another block diagram of a radio frequency power amplifier circuit in some embodiments of the present application. Figure 4 As shown, the RF power amplifier circuit 10 further includes a choke module 500 , which is connected between the input terminal 100 and the power modulation module 200 , and is used to allow only the direct current power DC input from the input terminal 100 to pass through.
[0048] The choke module 500 may be connected to the output end 300 .
[0049] Please also read Figure 5 , Figure 5 FIG. 1 is a block diagram of a choke module in some embodiments of the present application. Figure 4 , Figure 5As shown, the choke module 500 may include a choke inductor Lf, one end of the choke inductor Lf is connected to the input terminal 100, and the other end of the choke inductor Lf is connected to both the resonance module 600 and the power modulation module 200; wherein the direct current power DC inputted into the input terminal 100 is allowed to be transmitted to the power modulation module 200 through the choke inductor Lf, and the target radio frequency power RF1 obtained by the power modulation module 200 according to the direct current power DC is prohibited from being transmitted to the input terminal 100 through the choke inductor Lf.
[0050] Therefore, the above-mentioned RF power amplifier circuit 10 in the present application, by setting the choke module 500 including the choke inductor Lf, utilizes the characteristics of the choke inductor Lf that passes direct current but blocks alternating current, and can prevent the target RF power RF1 from being transmitted to the input end 100 through the choke inductor Lf.
[0051] like Figure 4 As shown, the RF power amplifier circuit 10 also includes a resonance module 600, which is connected between the power modulation module 200 and the output terminal 300. The resonance module 600 is used to filter out the harmonic components in the target RF power RF1, and output the target RF power RF1 after the harmonic components are filtered out through the output terminal 300.
[0052] The resonance module 600 may be connected to the choke module 500 .
[0053] Please also read Figure 6 , Figure 6 FIG. 1 is a block diagram of a resonance module in some embodiments of the present application. Figure 4 , Figure 6 As shown, the resonance module 600 may include a resonance inductor Lr and a resonance capacitor Cr, the resonance inductor Lr and the resonance capacitor Cr are connected in series between the choke module 500 and the output end 300, and the resonance inductor Lr or the resonance capacitor Cr is connected to the power modulation module 200; wherein, the resonance inductor Lr and the resonance capacitor Cr have a resonance frequency, and the resonance inductor Lr and the resonance capacitor Cr are used to filter out the harmonic components in the target radio frequency power RF1 according to the resonance frequency.
[0054] Therefore, the above-mentioned radio frequency power amplifier circuit 10 in the present application can filter out the harmonic components in the target radio frequency power RF1 according to the resonance frequency by setting an LC series resonance circuit composed of a resonance inductor Lr and a resonance capacitor Cr.
[0055] In some embodiments, the controller 400 can be a general-purpose processor such as a central processing unit (CPU), or a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA) or other programmable logic devices, discrete gate logic devices, transistor logic devices and other logic control devices, or a microprocessor such as a micro control unit (MCU).
[0056] The RF power amplifier circuit 10 of the present application, through the above structure, can flexibly adjust the power value of the target RF electric energy RF1 output by the RF power amplifier circuit 10 according to the needs of the plasma load at different stages, so as to achieve a better film forming effect.
[0057] See also Figure 7 , Figure 7 FIG. 1 is a block diagram of a radio frequency power supply device in some embodiments of the present application. Figure 7 As shown, the present application further provides a radio frequency power supply device 1000, and the radio frequency power supply device 1000 includes the radio frequency power amplifier circuit 10 in any of the aforementioned embodiments.
[0058] Please refer again Figure 1 .like Figure 1 As shown, the RF power amplifier circuit 10 includes an input terminal 100, an electric energy modulation module 200 and an output terminal 300, wherein the electric energy modulation module 200 is connected between a connection point N1 between the input terminal 100 and the output terminal 300 and a first potential point E1, wherein the first potential point E1 is used to provide a first potential. The input terminal 100 is used to input direct current power DC. The electric energy modulation module 200 is used to periodically charge and discharge to convert the direct current power DC into a target radio frequency power RF1, and output the target radio frequency power RF1 through the output terminal 300. Among them, the electric energy modulation module 200 has an adjustable first capacitance value and has multiple connection states corresponding to multiple different first capacitance values. The electric energy modulation module 200 is in a corresponding connection state at least according to the first capacitance value, so that the power value of the target radio frequency power RF1 obtained by the periodic charging and discharging of the electric energy modulation module 200 is a corresponding power value.
[0059] The more specific structure of the RF power amplifier circuit 10 can refer to the relevant content of the RF power amplifier circuit 10 in any of the aforementioned embodiments, which will not be repeated here.
[0060] In some embodiments, the RF power supply device 1000 may further include a crystal oscillator source, which is connected to the power modulation module 200 and is used to generate an initial RF signal.
[0061] In some embodiments, the RF power supply device 1000 may further include a DC source, which is connected to the input terminal 100 and is used to output DC power DC.
[0062] The RF power amplifier circuit 10 and the RF power supply device 1000 of the present application, through the above structure, can flexibly adjust the power value of the target RF power RF1 output by the RF power amplifier circuit 10 according to the needs of the plasma load at different stages, so as to achieve a better film forming effect.
[0063] The above description is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application; in the absence of conflict, the embodiments of the present application and the features in the embodiments can be combined with each other. Therefore, the protection scope of the present application shall be based on the protection scope of the claims.
Claims
1. A radio frequency power amplifier circuit, characterized in that: It comprises an input end, an electric energy modulation module and an output end, wherein the electric energy modulation module is connected between a connection point between the input end and the output end and a first potential point, wherein the first potential point is used to provide a first potential; The input end is used to input direct current power; The electric energy modulation module is used for periodically charging and discharging to convert the DC electric energy into target radio frequency electric energy, and output the target radio frequency electric energy through the output end; In which, the electric energy modulation module has an adjustable first capacitance value and multiple connection states corresponding to multiple different first capacitance values. The electric energy modulation module is in a corresponding connection state at least according to the first capacitance value, so that the power value of the target RF electric energy obtained by periodically charging and discharging the electric energy modulation module is a corresponding power value.
2. The radio frequency power amplifier circuit according to claim 1, characterized in that: The electric energy modulation module includes a plurality of gating components and an electric energy modulation component, each of which is connected to a connection point between the input end and the output end and is selectively connected to the first potential point, and the electric energy modulation component is connected between the connection point between the input end and the output end and the first potential point; The electric energy modulation component has an adjustable first capacitance value, and is used to cooperate with at least one gating component to periodically charge and discharge to convert the DC power into the target RF power. Each gating component is used to connect to the first potential point when in an on state, and to disconnect from the first potential point when in an off state. The electric energy modulation module is in different connection states at least according to the difference in the first capacitance value and the difference in the number of gating components in the on state, so that the power value of the target RF power converted by the electric energy modulation module is different.
3. The radio frequency power amplifier circuit according to claim 2, characterized in that: The RF power amplifier circuit also includes a controller, which is connected to each gating component and the electric energy modulation component. The controller is used to adjust the first capacitance value of the electric energy modulation component, and determine the number of gating components in the on state at least based on the first capacitance value, and control a corresponding number of gating components to be in the on state, so that the electric energy modulation module is in a corresponding connection state.
4. The radio frequency power amplifier circuit according to claim 3, characterized in that: The controller is used to determine the target number of gating components in the on state according to the relationship between the first capacitance value and the preset capacitance value, and control the target number of gating components to be in the connected state, so that the power modulation module is in the corresponding connected state.
5. The radio frequency power amplifier circuit according to claim 4, characterized in that: When the ratio of the first capacitance value to the preset capacitance value is greater than or equal to N-1 and less than N, the controller determines that the number of gating components in the on state is N, wherein N≥1 and N is an integer.
6. The radio frequency power amplifier circuit according to claim 2, characterized in that: The gating component comprises a radio frequency switch and a gating switch, wherein the radio frequency switch and the gating switch are connected in series between a connection point between the input end and the output end and the first potential point; Each RF switch is used for periodically turning on and off, and each RF switch is turned on or off synchronously; The gating switch is turned on or off, so that the corresponding gating component is in the on state or the off state respectively.
7. The radio frequency power amplifier circuit according to claim 6, characterized in that: The electric energy modulation component includes a modulation capacitor, and the modulation capacitor is used to discharge when at least one gating component is in a conducting state and when each RF switch of the at least one gating component in the conducting state is turned on, and to charge when each RF switch of the at least one gating component in the conducting state is turned off, so that the electric energy modulation component is periodically charged and discharged to obtain the target RF electric energy; The modulation capacitor has an adjustable capacitance value, and the adjustable capacitance value of the modulation capacitor is the adjustable first capacitance value of the electric energy modulation module.
8. The radio frequency power amplifier circuit according to claim 1, characterized in that: The radio frequency power amplifier circuit also includes a choke module, which is connected between the input end and the power modulation module, and is used for allowing only the direct current power input from the input end to pass through.
9. The radio frequency power amplifier circuit according to claim 1, characterized in that: The RF power amplifier circuit also includes a resonance module, which is connected between the power modulation module and the output end. The resonance module is used to filter out harmonic components in the target RF power and output the target RF power after the harmonic components are filtered out through the output end.
10. A radio frequency power supply device, characterized in that: It comprises a direct current source and a radio frequency power amplifier circuit as described in any one of claims 1 to 9.