Assembly substrate, light-emitting element, and display device

Abstract

The invention relates to an assembly substrate, a light-emitting element, and a display device. Provided is an assembly substrate onto which a plurality of light-emitting elements are self-assembled. The assembly substrate includes: a component substrate; a plurality of first assembly electrodes disposed on the assembly substrate; a plurality of second assembly electrodes disposed on the assembly substrate and alternately disposed with the plurality of first assembly electrodes; and a plurality of concave-convex structures disposed between the plurality of first assembled electrodes and the second assembled electrodes.

Description

Technical Field

[0001] The present specification relates to a light emitting element and a display device including the same, and more particularly, to a light emitting diode (LED) and a display device using the same. Background Art

[0002] As display devices used for monitors of computers, televisions, cellular phones, and the like, there are organic light emitting display (OLED) devices that are self-luminous devices, liquid crystal display (LCD) devices that require a separate light source, and the like.

[0003] The application range of the display device is diversified to personal digital assistants as well as monitors of computers and televisions, and display devices having a large display area and reduced volume and weight are being studied.

[0004] Moreover, recently, a display device including a light emitting diode (LED) has become a next-generation display device that has attracted much attention. Since LED is formed of an inorganic material rather than an organic material, it has excellent reliability, so that its service life is longer than that of a liquid crystal display device or an organic light emitting display device. In addition, LED has a fast light emission speed, excellent lighting efficiency, and strong impact resistance, so it has excellent stability and can display images with high brightness. Summary of the invention

[0005] An object to be achieved by the present specification is to provide a light emitting element having an improved assembling rate and a display device including the same.

[0006] Another object to be achieved by the present specification is to provide a light emitting element manufactured by a reduced number of manufacturing processes and a display device including the same.

[0007] Another object to be achieved by the present specification is to provide a light-emitting element capable of suppressing color mixing defects and a display device including the same.

[0008] The objects of the present disclosure are not limited to the above objects, and other objects not mentioned above can be clearly understood by those skilled in the art through the following description.

[0009] According to one aspect of the present disclosure, an assembly substrate is provided, on which a plurality of light-emitting elements are self-assembled. The assembly substrate comprises: an assembly substrate; a plurality of first assembly electrodes, which are arranged on the assembly substrate; a plurality of second assembly electrodes, which are arranged on the assembly substrate and alternately arranged with the plurality of first assembly electrodes; and a plurality of concave-convex structures, which are arranged between the plurality of first assembly electrodes and the second assembly electrodes.

[0010] According to one aspect of the present disclosure, a light-emitting element is provided. The light-emitting element includes: a first semiconductor layer; a light-emitting layer disposed on the first semiconductor layer; a second semiconductor layer disposed on the light-emitting layer; a second electrode disposed in contact with the second semiconductor layer; and a first electrode disposed in contact with the first semiconductor layer, wherein a concave pattern is disposed below the first semiconductor layer.

[0011] According to one aspect of the present disclosure, a display device is provided. The display device includes: a substrate on which a plurality of sub-pixels are defined; a plurality of transistors disposed on the substrate; and a light-emitting element disposed in each of the plurality of sub-pixels on the substrate, wherein a concave pattern is disposed on a lower side of the light-emitting element.

[0012] Additional details of example embodiments are included in the detailed description and the accompanying drawings.

[0013] According to the present specification, it is possible to suppress erroneous assembly of the light emitting element in the process of assembling the light emitting element to the panel.

[0014] According to the present specification, light emitting elements of various colors can be assembled simultaneously, thereby reducing the number of manufacturing processes.

[0015] According to this specification, the light emission efficiency of the light emitting element can be improved.

[0016] The effects according to the present disclosure are not limited to the above-exemplified contents, and more various effects are included in this specification. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The above and other aspects, features and other advantages of the present disclosure will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:

[0018] Figure 1 is a schematic cross-sectional view of a light emitting element according to an embodiment of the present specification;

[0019] FIG. 2A to FIG. 2C is a diagram for explaining a plurality of light emitting elements according to an embodiment of the present specification;

[0020] FIG. 3A to FIG. 3J is a process diagram for explaining a method for manufacturing a light-emitting element according to an embodiment of the present specification;

[0021] Figure 4 is a schematic cross-sectional view of a light emitting element according to another embodiment of the present specification;

[0022] Figure 5 is a schematic configuration diagram of a display device according to an embodiment of the present specification;

[0023] Figure 6 is a cross-sectional view of a pixel region of a display device according to an embodiment of the present specification;

[0024] Fig. 7A and Figure 7B is a cross-sectional view for explaining a method of manufacturing a display device according to an embodiment of the present specification;

[0025] Figure 8 is a cross-sectional view of a pixel region of a display device according to another embodiment of the present specification; and

[0026] 9A to 9H This is a process diagram for explaining a method of manufacturing a display device according to another embodiment of the present specification. DETAILED DESCRIPTION

[0027] By referring to the exemplary embodiments described in detail below in conjunction with the accompanying drawings, the advantages and features of the present disclosure and the methods for achieving these advantages and features will become clear. However, the present disclosure is not limited to the exemplary embodiments disclosed herein, but will be implemented in various forms. The exemplary embodiments are provided only by way of example so that those of ordinary skill in the art can fully understand what is disclosed in the present disclosure and the scope of the present disclosure.

[0028] The shapes, sizes, ratios, angles, quantities, etc. illustrated in the accompanying drawings for describing the exemplary embodiments of the present disclosure are merely examples, and the present disclosure is not limited thereto. The same reference numerals generally represent the same elements throughout the specification. In addition, in the following description of the present disclosure, in order to avoid unnecessarily obscuring the subject matter of the present disclosure, detailed descriptions of known related technologies may be omitted. Terms such as "including", "having" and "consisting of..." used herein are generally intended to allow the addition of other components, unless these terms are used together with the term "only". Unless otherwise expressly stated, any reference to the singular may include the plural.

[0029] Even if not explicitly stated, components are interpreted as including a general margin of error.

[0030] When terms such as “on,” “over,” “below,” and “beside” are used to describe the positional relationship between two components, one or more components may be placed between the two components, unless these terms are used together with the terms “immediately next to” or “directly.”

[0031] When an element or layer is disposed “on” another element or layer, the element or layer may be directly disposed on the other element or layer, or other layers or other elements may be interposed therebetween.

[0032] Although the terms "first", "second", etc. are used to describe various components, these components are not restricted by these terms. These terms are only used to distinguish one component from other components. Therefore, the first component mentioned below may be the second component in the technical concept of the present disclosure.

[0033] Like reference numbers generally refer to like elements throughout the specification.

[0034] The size and thickness of each component shown in the drawings are illustrated for convenience of description, and the present disclosure is not limited to the illustrated sizes and thicknesses of the components.

[0035] The features of the various embodiments of the present disclosure may be partially or completely adhered to or combined with each other, and may be technically interlocked and operated in various ways, and these embodiments may be performed independently of or in association with each other.

[0036] Hereinafter, exemplary embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

[0037] Figure 1 is a schematic cross-sectional view of a light emitting element according to an embodiment of the present specification.

[0038] Reference Figure 1 The light emitting element ED1 includes a first semiconductor layer 121 , a light emitting layer 122 , a second semiconductor layer 123 , a first electrode 124 , a second electrode 125 , an encapsulation layer 126 and an auxiliary electrode 127 .

[0039] The light emitting element ED1 may have various structures such as a lateral structure, a vertical structure, and a flip chip structure. The lateral light emitting element includes a first electrode and a second electrode horizontally arranged at two opposite sides of the light emitting layer. The vertical light emitting element includes a first electrode and a second electrode arranged at the upper side and the lower side of the light emitting layer. The flip chip light emitting element is substantially the same in structure as the lateral light emitting element. The lateral light emitting element has a first electrode and a second electrode horizontally arranged at the upper side of the light emitting layer, while the flip chip light emitting element has a first electrode and a second electrode horizontally arranged at the lower side of the light emitting layer. Below, a description is made assuming that the light emitting element ED1 has a vertical structure. However, the type of the light emitting element ED1 is not limited thereto.

[0040] The first semiconductor layer 121 is disposed on the lower side of the light emitting element ED1. The first semiconductor layer 121 may be a layer formed by doping a specific material with n-type and p-type impurities. For example, the first semiconductor layer 121 may be a layer formed by doping a material such as gallium nitride (GaN), indium aluminum phosphide (InAlP) or gallium arsenide (GaAs) with n-type and p-type impurities. In this case, the p-type impurity may be magnesium, zinc (Zn), beryllium (be), etc. The n-type impurity may be silicon (Si), germanium, tin (Sn), etc. However, the present disclosure is not limited thereto. In the present specification, the first semiconductor layer 121 is defined as an n-type semiconductor layer, i.e., a layer doped with n-type impurities. However, the present disclosure is not limited thereto.

[0041] The first semiconductor layer 121 includes a concave pattern CP.

[0042] The concave pattern CP is a portion disposed under the first semiconductor layer 121 and formed concavely in a direction in which the light emitting layer 122 is disposed. Therefore, the concave pattern CP may be disposed under the light emitting element ED1. The thickness of the portion of the first semiconductor layer 121 where the concave pattern CP is disposed may be smaller than the thickness of the portion of the first semiconductor layer 121 disposed outside the concave pattern CP.

[0043] The planar shape of the concave pattern CP may be circular. However, the present disclosure is not limited thereto. In the cross-sectional shape of the concave pattern CP, the concave pattern CP may be inclined relative to the bottom surface of the first semiconductor layer 121. For example, the width of the concave pattern CP may increase in a downward direction. However, the present disclosure is not limited thereto.

[0044] at the same time, Figure 1 It is shown that one concave pattern CP is provided in the cross-sectional view. However, the number of the concave patterns CP is not limited thereto, and a plurality of concave patterns CP may be provided.

[0045] The light emitting layer 122 and the second semiconductor layer 123 are disposed on the first semiconductor layer 121 .

[0046] The light emitting layer 122 may emit light by receiving positive holes and electrons from the first semiconductor layer 121 and the second semiconductor layer 123. The light emitting layer 122 may be configured as a single layer or a multi-quantum well (MQW) structure. For example, the light emitting layer 122 may be made of indium gallium nitride (InGaN), gallium nitride (GaN), etc. However, the present disclosure is not limited thereto.

[0047] The second semiconductor layer 123 is disposed on the light emitting layer 122. The second semiconductor layer 123 may be a layer formed by doping a specific material with n-type and p-type impurities. For example, the second semiconductor layer 123 may be a layer formed by doping a material such as gallium nitride (GaN), indium aluminum phosphide (InAlP) or gallium arsenide (GaAs) with n-type and p-type impurities. In addition, the p-type impurity may be magnesium (Mg), zinc (Zn), beryllium (be), etc. The n-type impurity may be silicon (Si), germanium (Ge), tin (Sn), etc. However, the present disclosure is not limited thereto. In the present specification, the second semiconductor layer 123 is defined as a p-type semiconductor layer, i.e., a layer doped with p-type impurities. However, the present disclosure is not limited thereto.

[0048] The distance between the bottom surface of the first semiconductor layer 121 based on the concave pattern CP and the top surface of the light emitting layer 122 and the distance between the bottom surface of the first semiconductor layer 121 based on the concave pattern CP and the top surface of the second semiconductor layer 123 may be smaller than the distance between the bottom surface of the first semiconductor layer 121 based on the portion disposed outside the concave pattern CP and the top surface of the light emitting layer 122 and the distance between the bottom surface of the first semiconductor layer 121 based on the portion disposed outside the concave pattern CP and the top surface of the second semiconductor layer 123, respectively.

[0049] The first electrode 124 may be disposed on a lower portion and a portion of a side portion of the first semiconductor layer 121. The first semiconductor layer 121 may be a semiconductor layer doped with n-type impurities, and the first electrode 124 may be a cathode.

[0050] The first electrode 124 is disposed on the bottom surface of the first semiconductor layer 121 and covers the surface of the concave pattern CP disposed on the lower portion of the first semiconductor layer 121. Therefore, the first electrode 124 may be disposed along the bottom surface of the first semiconductor layer 121 in a bent shape.

[0051] In this case, the first electrode 124 may extend from the bottom surface of the first semiconductor layer 121 and be disposed to be spaced apart from the side surface of the first semiconductor layer 121 and surround a portion of the side surface. For example, the first electrode 124 may be disposed to surround the side surface of the first semiconductor layer 121 disposed below the light emitting layer 122. However, the present disclosure is not limited thereto.

[0052] The first electrode 124 may be made of a conductive material, for example, an opaque conductive material such as titanium (Ti), gold (Au), silver (Ag), copper (Cu) or an alloy thereof. However, the present disclosure is not limited thereto. For example, the first electrode 124 may be made of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO).

[0053] The second electrode 125 is disposed on the second semiconductor layer 123. The second electrode 125 may be disposed on the top surface of the second semiconductor layer 123. In this case, the second semiconductor layer 123 may be a semiconductor layer doped with p-type impurities, and the second electrode 125 may be an anode. The second electrode 125 may be made of a conductive material, for example, a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), or an opaque conductive material such as titanium (Ti), gold (Au), silver (Ag), copper (Cu), or an alloy thereof. However, the present disclosure is not limited thereto.

[0054] The encapsulation layer 126 is disposed to at least partially surround the first semiconductor layer 121, the light emitting layer 122, the second semiconductor layer 123, and the second electrode 125. The encapsulation layer 126 may protect the first semiconductor layer 121, the light emitting layer 122, and the second semiconductor layer 123. For example, the encapsulation layer 126 may cover the side surface of the first semiconductor layer 121, the side surface of the light emitting layer 122, and the side surface of the second semiconductor layer 123. The encapsulation layer 126 may cover the entire side surface of the first semiconductor layer 121. However, the present disclosure is not limited thereto.

[0055] The encapsulation layer 126 may be disposed between the first semiconductor layer 121 and the first electrode 124. For example, one surface of the encapsulation layer 126 may be adjacent to the side surface of the first semiconductor layer 121, and the other surface of the encapsulation layer 126 may be adjacent to the first electrode 124 extending from the bottom surface of the first semiconductor layer 121. However, the present disclosure is not limited thereto.

[0056] In addition, the light emitting element ED1 may further include an auxiliary electrode 127 connected to the first electrode 124. The auxiliary electrode 127 may be disposed between the side surface of the first semiconductor layer 121 and the first electrode 124. In this case, the area where the auxiliary electrode 127 overlaps with the side surface of the first semiconductor layer 121 may be greater than the area where the first electrode 124 overlaps with the side surface of the first semiconductor layer 121. That is, a portion of the lower side of the auxiliary electrode 127 may be adjacent to the first electrode 124, and a portion of the upper side of the auxiliary electrode 127 may be exposed to the outside through the first electrode 124. However, the present disclosure is not limited thereto.

[0057] The light emitting element ED1 may include light emitting elements configured to emit light beams having different colors. For example, the light emitting element ED1 includes a red light emitting element, a blue light emitting element, and a green light emitting element.

[0058] Next, we will refer to FIG. 2A to FIG. 2C A red light emitting element, a blue light emitting element, and a green light emitting element are described.

[0059] FIG. 2A to FIG. 2CThis is a diagram for explaining multiple light-emitting elements according to an embodiment of the present specification.

[0060] Referring to FIG. 2A to FIG. 2C , the multiple light-emitting elements ED1 include a red light-emitting element 120, a green light-emitting element 130, and a blue light-emitting element 140. The red light-emitting element 120, the green light-emitting element 130, and the blue light-emitting element 140 may be respectively referred to as a first light-emitting element, a second light-emitting element, and a third light-emitting element.

[0061] Referring to Figure 2A , the red light-emitting element 120 includes a first semiconductor layer 121, a first light-emitting layer 122, a second semiconductor layer 123, a first electrode 124, a second electrode 125, a packaging layer 126, and an auxiliary electrode 127.

[0062] The red light-emitting element 120 includes a first concave pattern CP1 provided below the first semiconductor layer 121.

[0063] Referring to Figure 2B , the green light-emitting element 130 includes a first semiconductor layer 131, a first light-emitting layer 132, a second semiconductor layer 133, a first electrode 134, a second electrode 135, a packaging layer 136, and an auxiliary electrode 137.

[0064] The green light-emitting element 130 includes a second concave pattern CP2 provided below the first semiconductor layer 131.

[0065] Referring to Figure 2C , the blue light-emitting element 140 includes a first semiconductor layer 141, a first light-emitting layer 142, a second semiconductor layer 143, a first electrode 144, a second electrode 145, a packaging layer 146, and an auxiliary electrode 147.

[0066] The blue light-emitting element 140 includes a third concave pattern CP3 provided below the first semiconductor layer 141.

[0067] As a common feature, each of the red light-emitting element 120, the green light-emitting element 130, and the blue light-emitting element 140 may include a first semiconductor layer 121, 131, or 141, a light-emitting layer 122, 132, or 142, a second semiconductor layer 123, 133, or 143, a first electrode 124, 134, or 144, a second electrode 125, 135, or 145, a packaging layer 126, 136, or 146, and an auxiliary electrode 127, 137, or 147. However, the concave pattern CP may have different sizes and shapes.

[0068] For example, the width of the concave pattern CP may increase in the order of the first concave pattern CP1, the second concave pattern CP2, and the third concave pattern CP3, and the height of the concave pattern CP may decrease in the order of the first concave pattern CP1, the second concave pattern CP2, and the third concave pattern CP3.

[0069] The planar shape of the first concave pattern CP1 of the red light emitting element 120 may be a circular shape. Figure 2A , the first concave pattern CP1 of the red light emitting element 120 may have a first width W1 and a first height H1.

[0070] The planar shape of the second concave pattern CP2 of the green light emitting element 130 may be a circular shape. Figure 2B , the second concave pattern CP2 may have a second width W2 and a second height H2. The second width W2 may be greater than the first width W1, and the second height H2 may be less than the first height H1.

[0071] The planar shape of the third concave pattern CP3 of the blue light emitting element 140 may be a circular shape. Figure 2C , the third concave pattern CP3 may have a third width W3 and a third height H3. The third width W3 may be greater than the second width W2, and the third height H3 may be less than the second height H2.

[0072] In addition, a configuration is described in which the plane shapes of the first concave pattern CP1, the second concave pattern CP2, and the third concave pattern CP3 are all circular shapes. However, the present disclosure is not limited thereto. The plane shape may be a polygonal shape. In addition, the plane shapes of the first concave pattern CP1, the second concave pattern CP2, and the third concave pattern CP3 may be the same as each other, but the first concave pattern CP1, the second concave pattern CP2, and the third concave pattern CP3 may have different widths and different heights. However, the present disclosure is not limited thereto. The plane shapes of the first concave pattern CP1, the second concave pattern CP2, and the third concave pattern CP3 may be different from each other. For example, the plane shape of the first concave pattern CP1 may be a circular shape, the plane shape of the second concave pattern CP2 may be an elliptical shape or a polygonal shape, and the plane shape of the third concave pattern CP3 may be an elliptical shape or a polygonal shape different from the plane shape of the second concave pattern CP2. However, the present disclosure is not limited thereto.

[0073] also, FIG. 2A to FIG. 2C The outer diameters of the red light emitting element 120, the green light emitting element 130, and the blue light emitting element 140 are shown to be equal to each other. However, the present disclosure is not limited thereto. The outer diameters of the red light emitting element 120, the green light emitting element 130, and the blue light emitting element 140 may be different from each other.

[0074] FIG. 3A to FIG. 3Jis a process diagram for explaining a method for manufacturing a light-emitting element according to an embodiment of the present specification. FIG. 3A to FIG. 3J The process of manufacturing the red light emitting element 120 is described. However, the present disclosure is not limited thereto. The process can also be applied to the process of manufacturing the green light emitting element 130 and the blue light emitting element 140.

[0075] Reference Figure 3A , the first semiconductor layer 121, the light emitting layer 122, the second semiconductor layer 123, and the second electrode 125 are disposed on the wafer WA. Partial regions of the first semiconductor layer 121, the light emitting layer 122, and the second semiconductor layer 123 are in an etched state. Partial regions of the first semiconductor layer 121, the light emitting layer 122, and the second semiconductor layer 123 are in an etched state so that the light emitting element ED1 is separated from the wafer WA, and Figure 3A The first semiconductor layer 121, the light emitting layer 122 and the second semiconductor layer 123 in the wafer WA constitute a light emitting structure. In this case, the first semiconductor layer 121, the light emitting layer 122 and the second semiconductor layer 123 etched in each unit light emitting element ED1 are defined as a light emitting structure.

[0076] Reference Figure 3B The encapsulation layer 126 is formed to cover the upper surface and the side surface of the light emitting structure. The encapsulation layer 126 covers the first semiconductor layer 121, the light emitting layer 122, the second semiconductor layer 123 and the second electrode 125 exposed on the wafer WA.

[0077] Reference Figure 3C , the first layer M1 is formed to cover the encapsulation layer 126 exposed on the wafer WA. In this case, the first layer M1 extends between the light emitting structures and covers the top surface of the wafer WA exposed between the light emitting structures.

[0078] Reference Figure 3D , a first covering layer 191 is formed on the light emitting structure. The first covering layer 191 is formed to cover the area between the light emitting structures. In this case, the first covering layer 191 is disposed only below the light emitting layer 122. Therefore, the first covering layer 191 may cover a portion of the first layer M1 disposed below the light emitting layer 122, and a portion of the first layer M1 disposed above the first covering layer 191 is exposed to the outside.

[0079] Reference Figure 3E , an etching process is performed. The first capping layer 191 is used as a mask, and the first layer M1 is etched in a region not covered by the first capping layer 191. Therefore, by etching the first layer M1, an auxiliary electrode 127 covering the side surface of the first semiconductor layer 121 is formed. Thereafter, the first capping layer 191 is removed.

[0080] Reference Figure 3F , the light emitting structure, the second electrode 125, and the auxiliary electrode 127 disposed on the wafer WA are attached to the dummy substrate SUB. An adhesive layer PAC may be formed on one surface of the dummy substrate SUB. The light emitting structure disposed on the wafer WA, and the second electrode 125 and the auxiliary electrode 127 covering the light emitting structure are bonded to the dummy substrate SUB through the adhesive layer PAC.

[0081] Reference Figure 3G , the wafer WA is pressed toward the dummy substrate SUB. Therefore, the area between the light emitting structures is filled with the adhesive layer PAC of the dummy substrate SUB by pressure. In this case, the adhesive layer PAC may be additionally applied, and a portion of the lower side of the partial area of ​​the light emitting structure may be exposed by performing an ashing process. Therefore, as Figure 3G As shown, the adhesive layer PAC may surround a portion of the upper side of the auxiliary electrode 127 and expose a portion of the lower side of the auxiliary electrode 127. Thereafter, the wafer WA is removed, and the light emitting structure remains on one side of the dummy substrate SUB.

[0082] Reference Figure 3H , a concave pattern CP is formed on the bottom surface of the first semiconductor layer 121 exposed from the dummy substrate SUB. The concave pattern CP is formed by etching a portion of the first semiconductor layer 121 exposed by the adhesive layer PAC. The concave pattern CP is formed when the first semiconductor layer 121 is etched in the direction of the dummy substrate SUB by an etching process.

[0083] Reference Fig. 3I , a first electrode 124 is formed on the bottom surface of the first semiconductor layer 121 exposed from the dummy substrate SUB. The first electrode 124 covers the concave pattern CP. In this case, the first electrode 124 covers the auxiliary electrode 127 and the bottom surface of the first semiconductor layer 121 exposed through the adhesive layer PAC of the dummy substrate SUB.

[0084] Reference Figure 3J , the dummy substrate SUB and the adhesive layer PAC are removed. Therefore, the light emitting structure, the first electrode 124, the second electrode 125, the encapsulation layer 126, and the auxiliary electrode 127 that have been attached to the adhesive layer PAC are separated, thereby forming the light emitting element ED1.

[0085] In the case of light-emitting elements for assembly, a plurality of light-emitting elements are immersed in a fluid and self-assembled. In this case, a plurality of light-emitting elements are assembled by applying an electric field to the assembly electrodes. However, applying the same electric field to the assembly electrodes makes it difficult to distinguish and assemble a plurality of light-emitting elements. For example, in the case where a plurality of light-emitting elements emitting light beams of different colors are immersed in a fluid and self-assembled, there may be a problem that the light-emitting elements are not assembled in the desired positions, such as the problem that a green light-emitting element or a blue light-emitting element is assembled in the red sub-pixel area. In the event that the above-mentioned problems occur, color mixing defects may occur, and the assembly rate of the plurality of light-emitting elements is reduced, which may reduce the yield rate of the display device.

[0086] Therefore, in the light-emitting element ED1 according to the embodiment of the present specification, the concave pattern CP may be provided at the lower side of the light-emitting element ED1 to distinguish the light-emitting element ED1. For example, the first concave pattern CP1 of the red light-emitting element 120, the second concave pattern CP2 of the green light-emitting element 130, and the third concave pattern CP3 of the blue light-emitting element 140 may have different sizes. The red light-emitting element 120, the green light-emitting element 130, and the blue light-emitting element 140 may be self-assembled while corresponding to the substrate having a concave-convex structure corresponding to the size of the concave pattern CP. Specifically, the first concave-convex structure, the second concave-convex structure, and the third concave-convex structure may be provided between the assembly electrodes 160, and the first concave-convex structure, the second concave-convex structure, and the third concave-convex structure are provided to correspond to the size of the first concave pattern CP1, the second concave pattern CP2, and the third concave-convex structure, so that the light-emitting element emitting a light beam having a specific color may be self-assembled in the sub-pixel SP emitting a light beam having a corresponding color. Therefore, in the light-emitting element ED1 according to the embodiment of the present specification, the assembly rate of the light-emitting element ED1 may be increased.

[0087] In addition, in the case where the first concave pattern CP1, the second concave pattern CP2, and the third concave pattern CP3 are set to have different sizes, and the red light emitting element 120, the green light emitting element 130, and the blue light emitting element 140 are self-assembled at positions corresponding to the plurality of sub-pixels SP, respectively, the plurality of light emitting elements ED1 may have the same outer diameter. In the related art, a plurality of light emitting elements are formed to have different outer diameters and self-assemble. For example, the planar shape of the red light emitting element 120 is set to a circular shape, the planar shape of the green light emitting element 130 is set to an elliptical shape, and the planar shape of the blue light emitting element 140 is set to an elliptical shape different from the planar shape of the green light emitting element 130, so that a light emitting element having a specific shape can be assembled in a sub-pixel emitting a light beam having a specific color. In contrast, in the light emitting element ED1 according to the embodiment of the present specification, even if the plurality of light emitting elements ED1 have the same outer diameter, the assembly rate of the light emitting element ED1 can be increased by adjusting the size of the concave pattern CP. Therefore, the light emitting element ED1 emitting light beams having different colors can be manufactured by the same mask process, which can reduce the number of processes for manufacturing the light emitting element ED1 and reduce costs.

[0088] In addition, in the light emitting element ED1 according to the embodiment of the present specification, the concave pattern CP is provided below the first semiconductor layer 121, 131 or 141. Therefore, in the region where the concave pattern CP is provided, the thickness of the first semiconductor layer 121, 131 or 141 can be reduced. In the concave pattern CP, the interval between the first electrode 124, 134 or 144 and the second electrode 125, 135 or 145 can be reduced. Therefore, the light emitting efficiency of the light emitting element ED1 can be improved.

[0089] Figure 4 2 is a schematic cross-sectional view of a light-emitting element according to another embodiment of the present specification. In addition to adding a protective layer 227, the first electrode 224 and the encapsulation layer 226 are different from the first electrode and the encapsulation layer of the light-emitting element ED1, and the auxiliary electrode 127 is not provided. Figure 4 The light emitting element ED2 in the Figures 1 to 3G The light emitting element ED1 in FIG. 1 is substantially the same as that in FIG. 1 . Therefore, repeated description will be omitted.

[0090] Reference Figure 4 , the first electrode 224 is disposed on the first semiconductor layer 121 . The first electrode 224 is disposed on the first semiconductor layer 121 protruding outside the light emitting layer 122 and the second semiconductor layer 123 .

[0091] The encapsulation layer 226 is provided to at least partially surround the first semiconductor layer 121, the light emitting layer 122, the second semiconductor layer 123, and the second electrode 125. The encapsulation layer 226 may cover the side surface of the first semiconductor layer 121, the side surface of the light emitting layer 122, the side surface of the second semiconductor layer 123, and the top surface of the second semiconductor layer 123 in a region excluding the first electrode 224 and the second electrode 125. At the same time, the encapsulation layer 226 may cover a portion of the first electrode 224 and a portion of the top surface of the second electrode 125. However, the present disclosure is not limited thereto.

[0092] The protective layer 227 is disposed under the light emitting element ED2. The protective layer 227 covers the surface of the concave pattern CP disposed under the first semiconductor layer 121. Therefore, the protective layer 227 may be disposed along the bottom surface of the first semiconductor layer 121 in a curved shape.

[0093] In this case, the protective layer 227 may extend from the bottom surface of the first semiconductor layer 121 and be disposed to surround a portion of the side surface of the first semiconductor layer 121. For example, the protective layer 227 may be disposed to surround the side surface of the encapsulation layer 226 and the first semiconductor layer 121 disposed under the light emitting layer 122. However, the present disclosure is not limited thereto.

[0094] The protective layer 227 can prevent the plurality of light emitting elements ED2 from aggregating. The light emitting element ED2 is made of a semiconductor doped with impurities and has polarity. In this case, when the surface of the light emitting element ED2 is exposed and not covered, mutual cohesion is generated between the light emitting elements ED2, and the light emitting elements ED2 agglomerate. Therefore, the protective layer 227 can cover the bottom surface of the first semiconductor layer 121 of the light emitting element ED2, thereby preventing the plurality of light emitting elements ED1 from agglomerating.

[0095] The protective layer 227 may be made of a material having excellent reflectivity. Therefore, the protective layer 227 may be a reflective layer. The protective layer 227 may be disposed below the first semiconductor layer 121, covering the surface of the concave pattern CP, and reflecting the light emitted from the light emitting element ED2 toward the upper side of the light emitting element ED2. For example, the protective layer 227 may be made by using an opaque conductive layer made of silver (Ag), aluminum (Al), molybdenum (Mo), titanium (Ti) or an alloy thereof and a transparent conductive layer made of indium tin oxide (ITO). However, the structure of the reflective layer is not limited thereto.

[0096] In addition, like the encapsulation layer 226, the protective layer 227 can be made of an insulating material and protect the first semiconductor layer 131. For example, the protective layer 227 can be made of the same material as the encapsulation layer 226. Additionally, in the case where the protective layer 227 is made of the same material as the encapsulation layer 226, the protective layer 227 and the encapsulation layer 226 can be integrally formed and cover the top surface and the side surface of the light-emitting element ED2 and the surface of the concave pattern CP provided under the first semiconductor layer 121. However, the present disclosure is not limited thereto.

[0097] In the light-emitting element ED2 according to another embodiment of the present specification, concave patterns CP having different sizes are provided on the lower side of the light-emitting element ED2, so that the light-emitting element ED2 can be distinguished, which can suppress color mixing defects and improve the assembly rate of the light-emitting element.

[0098] Furthermore, in the light-emitting element ED2 according to another embodiment of the present specification, the light-emitting elements ED2 that emit light beams having different colors can be distinguished only by the sizes of the plurality of concave patterns CP. Therefore, the light-emitting elements ED2 that emit light beams having different colors can have the same external shape, and the light-emitting elements ED2 can be manufactured by the same process, which can reduce the number of manufacturing processes and the manufacturing cost.

[0099] In addition, the light-emitting element ED2 can include light-emitting elements configured to emit light beams having different colors. For example, the light-emitting element ED2 includes a red light-emitting element, a blue light-emitting element, and a green light-emitting element.

[0100] The red light-emitting element, the green light-emitting element, and the blue light-emitting element can commonly include a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a first electrode, a second electrode, an encapsulation layer, and a protective layer, but have concave patterns CP with different sizes and shapes.

[0101] For example, the red light-emitting element, the green light-emitting element, and the blue light-emitting element can respectively include a first concave pattern, a second concave pattern, and a third concave pattern. The width of the concave pattern CP can increase in the order of the first concave pattern, the second concave pattern, and the third concave pattern, while the height of the concave pattern can decrease in the order of the first concave pattern, the second concave pattern, and the third concave pattern.

[0102] Furthermore, in the light-emitting element ED2 according to the embodiment of the present specification, the thickness of the first semiconductor layer 121 in the region where the concave pattern CP is provided can be reduced, which can improve the light-emitting efficiency of the light-emitting element ED2.

[0103] The light emitting element ED2 according to another embodiment of the present specification is implemented as a lateral structure in which the first electrode 224 is provided on the first semiconductor layer 121. Therefore, the light emitting element ED2 can be connected to the display panel without performing a bonding metal molding process and a thermal compression process that are performed to connect the vertical light emitting element to the display panel. Therefore, in the light emitting element ED2 according to another embodiment of the present specification, since the light emitting element ED2 can be connected to the display panel without performing a bonding metal molding process and a thermal compression process, process optimization can be achieved.

[0104] Figure 5 is a schematic configuration diagram of a display device according to an embodiment of the present specification. For ease of description, Figure 5 Only the display panel PN, the gate driving part GD, the data driving part DD, and the timing controller TC among various constituent elements of the display device 1000 are shown.

[0105] Reference Figure 5 , the display device 1000 includes: a display panel PN including a plurality of sub-pixels SP; a gate driving part GD configured to supply various types of signals to the display panel PN; a data driving part DD; and a timing controller TC configured to control the data driving part DD and the gate driving part GD.

[0106] The gate driving part GD supplies a plurality of scan signals to the plurality of scan lines SL in response to a plurality of gate control signals supplied from the timing controller TC. Figure 5 It is shown that a single gate driving part GD is disposed to be spaced apart from one side of the display panel PN. However, the number and arrangement of the gate driving parts GD are not limited thereto.

[0107] The data driving part DD converts the image data input from the timing controller TC into data voltages using the reference gamma voltages in response to a plurality of data control signals supplied from the timing controller TC. The data driving part DD may supply the converted data voltages to the plurality of data lines DL.

[0108] The timing controller TC aligns the image data input from the outside and supplies the image data to the data driving part DD. The timing controller TC can generate a gate control signal and a data control signal by using a synchronization signal (i.e., a dot clock signal, a data enable signal, and a horizontal / vertical synchronization signal) input from the outside. Further, the timing controller TC can control the gate driving part GD and the data driving part DD by supplying the generated gate control signal and data control signal to the gate driving part GD and the data driving part DD.

[0109] The display panel PN is configured to display an image to a user, and includes a plurality of sub-pixels SP.

[0110] The display panel PN may have a display area AA, and a non-display area NA configured to surround the display area AA.

[0111] The display area AA is an area of ​​the display device 1000 that displays an image. The display area AA may include a plurality of sub-pixels SP constituting a plurality of pixels, and a circuit configured to operate the plurality of sub-pixels SP. The plurality of sub-pixels SP are the smallest units constituting the display area AA. n sub-pixels SP may constitute a single pixel. A light-emitting element, a thin film transistor for operating the light-emitting element, and the like may be provided in each of the plurality of sub-pixels SP. Depending on the type of the display panel PN, the plurality of light-emitting elements may be defined differently. For example, in the case where the display panel PN is an inorganic light-emitting display panel, the light-emitting element may be a light-emitting diode (LED) or a micro light-emitting diode (micro-LED).

[0112] A plurality of lines for transmitting various types of signals to a plurality of sub-pixels SP are provided in the display area AA. For example, the plurality of lines may include a plurality of data lines DL for supplying data voltages to the plurality of sub-pixels SP, and a plurality of scan lines SL for supplying scan signals to the plurality of sub-pixels SP. The plurality of scan lines SL may extend in one direction in the display area AA and be connected to the plurality of sub-pixels SP. The plurality of data lines DL may extend in a direction different from the one direction in the display area AA and be connected to the plurality of sub-pixels SP. In addition, a low potential power line, a high potential power line, etc. may be further provided in the display area AA. However, the present disclosure is not limited thereto.

[0113] The non-display area NA may be defined as an area where an image is not displayed, that is, an area extending from the display area AA. The non-display area NA may include link lines and pad electrodes for transmitting signals to the sub-pixels SP in the display area AA. Alternatively, the non-display area NA may include a driver IC such as a gate driver IC and a data driver IC.

[0114] However, the non-display area NA may be located on the rear surface of the display panel PN, ie, on the surface where the sub-pixel SP does not exist. Alternatively, the non-display area NA may not be included. However, the present disclosure is not limited to the configuration shown in the drawings.

[0115] In addition, driving parts such as a gate driving part GD, a data driving part DD, and a timing controller TC may be connected to the display panel PN in various ways. For example, the gate driving part GD may be installed in the non-display area NA by a gate-in-panel (GIP) method, or may be installed between a plurality of sub-pixels SP in the display area AA by a gate-in-active-area (GIA) method. For example, the data driving part DD and the timing controller TC may be formed on a separate flexible film and a printed circuit board PCB. The data driving part DD and the timing controller TC may be electrically connected to the display panel PN by bonding the flexible film and the printed circuit board PCB to a pad electrode formed in the non-display area NA of the display panel PN.

[0116] In the case where the gate driving part GD is installed by the GIP method, and the data driving part DD and the timing controller TC send signals to the display panel PN through the pad electrode in the non-display area NA, in order to set the gate driving part GD and the pad electrode, it is necessary to ensure that the area of ​​the non-display area NA reaches a predetermined level or higher, which may increase the border.

[0117] Alternatively, in the case where the gate driving part GD is installed in the display area AA by the GIA method, and the side line connecting the signal line on the front surface of the display panel PN to the pad electrode on the rear surface of the display panel PN is formed to bond the flexible film and the printed circuit board to the rear surface of the display panel PN, the non-display area NA on the front surface of the display panel PN can be minimized. That is, in the case where the gate driving part GD, the data driving part DD, and the timing controller TC are connected to the display panel PN by the above method, a zero frame in which there is substantially no frame can be realized.

[0118] Figure 6 is a cross-sectional view of a pixel region of a display device according to an embodiment of the present specification.

[0119] Reference Figure 6 The display device 1000 includes a substrate 110, a light shielding layer LS, a buffer layer 111, a gate insulating layer 112, a first interlayer insulating layer 113, a first passivation layer 114, a first planarizing layer 115, a second passivation layer 116, a third passivation layer 117, a second planarizing layer 118, a third planarizing layer 119, an assembly electrode 160, a connecting electrode 150, a light emitting element ED1, a concave-convex structure P and a storage capacitor Cst.

[0120] Reference Figure 6, the display device 1000 includes a substrate 110. The substrate 110 may be a substrate, that is, an insulating substrate configured to support the constituent elements disposed on the upper side of the display device 1000. A plurality of sub-pixels SP may be formed on the substrate 110, so that an image can be displayed. For example, the substrate 110 may be made of glass, resin, etc. In addition, the substrate 110 may include polymers or plastics. In some embodiments, the substrate 110 may be made of a flexible plastic material.

[0121] The plurality of sub-pixels SP may be arranged in a plurality of rows and a plurality of columns on the substrate 110. The plurality of sub-pixels SP may each include a light-emitting element ED1 and a pixel circuit and emit light independently.

[0122] The plurality of sub-pixels SP may include a first sub-pixel, a second sub-pixel, and a third sub-pixel that emit light beams of different colors. For example, the first sub-pixel may be a red sub-pixel, the second sub-pixel may be a green sub-pixel, and the third sub-pixel may be a blue sub-pixel. However, the present disclosure is not limited thereto.

[0123] A first light-emitting element may be disposed on the first sub-pixel, a second light-emitting element may be disposed on the second sub-pixel, and a third light-emitting element may be disposed on the third sub-pixel. For example, the first light-emitting element may be a red light-emitting element, the second light-emitting element may be a green light-emitting element, and the third light-emitting element may be a blue light-emitting element. However, the present disclosure is not limited thereto.

[0124] A plurality of lines for sending various types of signals to the plurality of sub-pixels SP are provided on the substrate 110. For example, a plurality of data lines DL extending in the column direction, a plurality of high-potential power supply lines VDD, and a plurality of low-potential power supply lines may be provided on the substrate 110. For example, a plurality of light-emission control signal lines, a plurality of auxiliary high-potential power supply lines, a plurality of auxiliary low-potential power supply lines, and a plurality of scan lines extending in the row direction may be provided on the substrate 110. In addition, the high-potential power supply line VDD extending in the column direction and the auxiliary high-potential power supply line extending in the row direction may be electrically connected to each other through a contact hole. In this case, the light-emission control signal line sends a light-emission control signal to the pixel circuit of the plurality of sub-pixels SP to control the light-emission timing of the plurality of sub-pixels SP.

[0125] A pixel circuit for operating the light-emitting element ED1 is provided in each of the plurality of sub-pixels SP on the substrate 110. The pixel circuit may include a plurality of thin-film transistors and a plurality of capacitors. For ease of description, Figure 6 only the driving transistor DT and the storage capacitor Cst among the components of the pixel circuit are shown. However, the pixel circuit may further include a switching transistor, a sensing transistor, a light-emission control transistor, etc. However, the present disclosure is not limited thereto.

[0126] The light shielding layer LS is disposed on each of the plurality of sub-pixels SP and on the substrate 110. The light shielding layer LS may block light entering the transistor from the lower side of the substrate 110 and minimize leakage current. For example, the light shielding layer LS may block light entering the active layer ACT.

[0127] The first capacitor electrode SC1 is disposed on each of the plurality of sub-pixels SP and is disposed on the substrate 110. The first capacitor electrode SC1 together with other capacitor electrodes may constitute a storage capacitor Cst. The first capacitor electrode SC1 may be integrated with the light shielding layer LS.

[0128] The buffer layer 111 is disposed on the light shielding layer LS and the first capacitor electrode SC1. The buffer layer 111 can reduce the penetration of moisture or impurities through the substrate 110. For example, the buffer layer 111 can be configured as a single layer or a multilayer made of silicon oxide (SiOx) or silicon nitride (SiNx). However, the present disclosure is not limited thereto. However, depending on the type of the substrate 110 or the type of the transistor, the buffer layer 111 may not be included. However, the present disclosure is not limited thereto.

[0129] The driving transistor DT is disposed on the buffer layer 111 in each of the plurality of sub-pixels SP. The driving transistor DT is a transistor that supplies a driving current to the light emitting element ED1. The driving transistor DT may be turned on and control the driving current flowing to the light emitting element ED1.

[0130] The driving transistor DT includes an active layer ACT, a gate electrode GE, a source electrode SE, and a drain electrode DE.

[0131] The active layer ACT is disposed on the buffer layer 111. The active layer ACT may be made of a semiconductor material such as an oxide semiconductor, amorphous silicon, or polycrystalline silicon. However, the present disclosure is not limited thereto.

[0132] The gate insulating layer 112 is disposed on the active layer ACT. The gate insulating layer 112 is an insulating layer that insulates the active layer ACT and the gate electrode GE. The gate insulating layer 112 may be configured as a single layer or multiple layers made of silicon oxide (SiOx) or silicon nitride (SiNx). However, the present disclosure is not limited thereto. Meanwhile, Figure 6 It is shown that the gate insulating layer 112 is disposed only in a region overlapping the gate electrode GE and the second capacitor electrode SC2 . However, the present disclosure is not limited thereto.

[0133] The gate electrode GE is disposed on the gate insulating layer 112. The gate electrode GE may be made of a conductive material, for example, copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof. However, the present disclosure is not limited thereto.

[0134] The first interlayer insulating layer 113 is disposed on the gate electrode GE. A contact hole is formed in the first interlayer insulating layer 113, and the source electrode SE and the drain electrode DE are connected to the active layer ACT through the contact hole. The first interlayer insulating layer 113 is an insulating layer for protecting components disposed below the first interlayer insulating layer 113. The first interlayer insulating layer 113 may be configured as a single layer or a multilayer made of silicon oxide (SiOx) or silicon nitride (SiNx). However, the present disclosure is not limited thereto.

[0135] The source electrode SE and the drain electrode DE are disposed on the first interlayer insulating layer 113 and are electrically connected to the active layer ACT. The drain electrode DE may be electrically connected to the active layer ACT and the high potential power line, and the source electrode SE may be electrically connected to the active layer ACT and the light emitting element ED1. The source electrode SE and the drain electrode DE may each be made of a conductive material, for example, copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof. However, the present disclosure is not limited thereto.

[0136] The second capacitor electrode SC2 is disposed on the gate insulating layer 112. The second capacitor electrode SC2 may be one of the electrodes constituting the storage capacitor Cst. The second capacitor electrode SC2 may be disposed to overlap with the first capacitor electrode SC1. Although not shown in the drawings, the second capacitor electrode SC2 may be integrated with the gate electrode GE of the driving transistor DT and electrically connected to the gate electrode GE. However, the present disclosure is not limited thereto. The first capacitor electrode SC1 and the second capacitor electrode SC2 may be disposed to be spaced apart from each other with the buffer layer 111 and the gate insulating layer 112 interposed therebetween.

[0137] The third capacitor electrode SC3 is disposed on the first interlayer insulating layer 113. The third capacitor electrode SC3 may be an electrode constituting a storage capacitor Cst. The third capacitor electrode SC3 may be disposed to overlap the first capacitor electrode SC1 and the second capacitor electrode SC2. The third capacitor electrode SC3 may be integrated with the source electrode SE of the driving transistor DT and electrically connected to the source electrode SE. In addition, the source electrode SE may also be electrically connected to the first capacitor electrode SC1 through a contact hole formed in the first interlayer insulating layer 113 and the buffer layer 111. Therefore, the first capacitor electrode SC1 and the third capacitor electrode SC3 may be electrically connected to the source electrode SE of the driving transistor DT.

[0138] When the light emitting element ED1 emits light, the storage capacitor Cst can store the potential difference between the gate electrode GE and the source electrode SE of the driving transistor DT, so that a constant current can be supplied to the light emitting element ED1. The storage capacitor Cst includes a first capacitor electrode SC1 formed on the substrate 110 and connected to the source electrode SE, a second capacitor electrode SC2 formed on the buffer layer 111 and the gate insulating layer 112, and a third capacitor electrode SC3 formed on the first interlayer insulating layer 113 and connected to the second source electrode SE2. The storage capacitor Cst can store the voltage between the gate electrode GE and the source electrode SE of the driving transistor DT.

[0139] The first passivation layer 114 is disposed on the driving transistor DT and the storage capacitor Cst. The first passivation layer 114 may be an insulating layer for protecting components disposed below the first passivation layer 114. The first passivation layer 114 may be configured as a single layer or multiple layers made of silicon oxide (SiOx) or silicon nitride (SiNx). However, the present disclosure is not limited thereto.

[0140] The first planarization layer 115 is disposed on the first passivation layer 114. The first planarization layer 115 may planarize the upper portion of the substrate 110 on which the driving transistor DT and the storage capacitor Cst are disposed. The first planarization layer 115 may be configured as a single layer or a multilayer, and may be made of, for example, a photoresist or an acrylic-based organic material. However, the present disclosure is not limited thereto.

[0141] The second passivation layer 116 is disposed on the first planarization layer 115. The second passivation layer 116 may be an insulating layer for protecting components disposed below the second passivation layer 116. The second passivation layer 116 may be configured as a single layer or a multilayer made of silicon oxide (SiOx) or silicon nitride (SiNx). However, the present disclosure is not limited thereto.

[0142] The connection electrode 150 and the plurality of assembly electrodes 160 are disposed on the second passivation layer 116 .

[0143] The connection electrode 150 is an electrode that electrically connects the driving transistor DT to the second connection electrode CE2 and may be electrically connected to the source electrode SE or the third capacitor electrode SC3 through a contact hole formed in the second passivation layer 116 , the first planarization layer 115 , and the first passivation layer 114 .

[0144] The connection electrode 150 may have a multilayer structure including a first connection layer 150a and a second connection layer 150b. The first connection layer 150a is disposed on the second passivation layer 116, and the second connection layer 150b is disposed to cover the first connection layer 150a. The second connection layer 150b may be disposed to surround the top surface and side surfaces of the first connection layer 150a.

[0145] The second connection layer 150b may be made of a material that is more corrosion-resistant than the material of the first connection layer 150a. Therefore, in the process of manufacturing the display device 1000, short circuit defects caused by migration between lines adjacent to the first connection layer 150a may be minimized. For example, the first connection layer 150a may be made of a conductive material such as copper (Cu) and chromium (Cr). The second connection layer 150b may be made of molybdenum (Mo) and molybdenum titanium (MoTi). However, the present disclosure is not limited thereto.

[0146] A plurality of assembly electrodes 160 are disposed on the second passivation layer 116 .

[0147] The assembled electrode 160 includes a first assembled electrode 162 and a second assembled electrode 163 .

[0148] The plurality of first assembly electrodes 162 and the plurality of second assembly electrodes 163 may extend in a column direction in the plurality of sub-pixels SP, and be disposed to be spaced apart from each other at predetermined intervals.

[0149] The first assembly electrode 162 and the second assembly electrode 163 may be arranged to overlap with the light emitting element ED1. First, the first assembly electrode 162 may be arranged in a region corresponding to one side of the light emitting element ED1. In the assembly electrode 160, the first assembly electrode 162 may be arranged in a region overlapping with the low potential power line and electrically connected to the low potential power line. The low potential power line is a line for transmitting a low potential power supply voltage to the light emitting element ED1. The low potential power line may extend in a column direction in each of a plurality of sub-pixels SP. For example, the low potential power line may be arranged in each of a plurality of sub-pixels SP.

[0150] The second assembly electrode 163 may be spaced apart from the first assembly electrode 162 and disposed in a region corresponding to the other side of the light emitting element ED1 .

[0151] The plurality of assembled electrodes 160 respectively include conductive layers 162a and 163a disposed on the second passivation layer 116, and cover layers 162b and 163b disposed on the conductive layers 162a and 163a and configured to cover the entire top and side surfaces of the conductive layers 162a and 163a.

[0152] The first assembled electrode 162 includes a first conductive layer 162a and a first coating layer 162b, and the second assembled electrode 163 includes a second conductive layer 163a and a second coating layer 163b.

[0153] The first conductive layer 162a and the second conductive layer 163a may not overlap with the light emitting element ED1. That is, the end portions of the first conductive layer 162a and the second conductive layer 163a may be disposed outside the light emitting element ED1.

[0154] The first cladding layer 162b of the first assembly electrode 162 may be provided to cover the top and side surfaces of the first conductive layer 162a. In addition, the second cladding layer 163b of the second assembly electrode 163 may be provided to cover the top and side surfaces of the second conductive layer 163a. ​​In this case, the first cladding layer 162b and the second cladding layer 163b may extend from the end of the first conductive layer 162a and the end of the second conductive layer 163a toward the central portion of the light emitting element ED1 and overlap with the light emitting element ED1.

[0155] The first conductive layer 162a and the second conductive layer 163a may be formed by the same process as the first connection layer 150a of the connection electrode 150, and may be made of the same material as the first connection layer 150a of the connection electrode 150. For example, the first conductive layer 162a and the second conductive layer 163a may be made of conductive materials such as copper (Cu) and chromium (Cr). In addition, the first cladding layer 162b and the second cladding layer 163b may be formed by the same process as the second connection layer 150b of the connection electrode 150, and may be made of the same material as the second connection layer 150b of the connection electrode 150. For example, the first cladding layer 162b and the second cladding layer 163b may each be made of a material that is more corrosion-resistant than the material of the first conductive layer 162a and the second conductive layer 163a. ​​For example, the first cladding layer 162b and the second cladding layer 163b may each be made of molybdenum (Mo), molybdenum titanium (MoTi), etc. However, the present disclosure is not limited thereto.

[0156] The third passivation layer 117 is disposed on the connection electrode 150 and the assembly electrode 160. The third passivation layer 117 may be an insulating layer for protecting components disposed below the third passivation layer 117. The third passivation layer 117 may be configured as a single layer or multiple layers made of silicon oxide (SiOx) or silicon nitride (SiNx). However, the present disclosure is not limited thereto.

[0157] A partial region of the third passivation layer 117 may be opened in a region adjacent to the plurality of light emitting elements ED1. For example, a region of the third passivation layer 117 adjacent to one side surface of two opposite surfaces of each of the plurality of light emitting elements ED1 may be opened. For example, the third passivation layer 117 may expose a portion of the top surface of the first assembly electrode 162 in a region adjacent to one side surface of each of the plurality of light emitting elements ED1.

[0158] A bonding layer AD is provided on the third passivation layer 117. The bonding layer AD may be provided to overlap with the light emitting element ED1 and also overlap with a portion of the assembly electrode 160. The bonding layer AD may be an organic film that temporarily fixes the light emitting element ED1 in the process of self-assembling the light emitting element ED1. When an organic film covering the light emitting element ED1 is formed in the process of manufacturing the display device 1000, a portion of the organic film is filled in the space between the light emitting element ED1, the third passivation layer 117, and the assembly electrode 160, so that the organic film may temporarily fix the light emitting element ED1 on the third passivation layer 117 and the assembly electrode 160. Thereafter, even if the organic film is removed, a portion of the organic film that penetrates into the lower portion of the light emitting element ED1 may remain without being removed, thereby defining a bonding layer. The bonding layer AD may be made of a photoresist or an organic material, for example, an acrylic-based organic material. However, the present disclosure is not limited thereto.

[0159] In addition, refer to Figure 6 , a concavo-convex structure P is provided on the bonding layer AD. The concavo-convex structure P may be provided in a shape corresponding to the concave pattern CP of the light emitting element ED1, and provided in the concave pattern CP.

[0160] The concavo-convex structure P is disposed between the first assembly electrode 162 and the second assembly electrode 163. The concavo-convex structure P may be disposed to overlap with the first assembly electrode 162 and the second assembly electrode 163, or may be disposed not to overlap with the first assembly electrode 162 and the second assembly electrode 163.

[0161] One or more light emitting elements ED1 are provided on the bonding layer AD and the concavo-convex structure P of one sub-pixel SP. The light emitting element ED1 is an element that emits light by receiving current. The light emitting element ED1 may include a light emitting element ED1 configured to emit red light, green light, blue light, etc. The light emitting element ED1 may realize light of various colors including white light by using a combination of red light, green light, blue light, etc. In addition, light beams having various colors may be realized by using a light emitting element ED1 that emits light having a specific color and a light conversion member that converts light from the light emitting element ED1 into light having a color different from the specific color.

[0162] Reference Figure 6 The light emitting element ED1 includes a first semiconductor layer 121, a light emitting layer 122, a second semiconductor layer 123, a first electrode 124, a second electrode 125, an encapsulation layer 126, an auxiliary electrode 127, and a concave pattern CP. Figure 6 The concave pattern CP is provided in a shape corresponding to the concavo-convex structure P, and is provided to surround the side surface and the top surface of the concavo-convex structure P.

[0163] Hereinafter, description will be made assuming that the plurality of light emitting elements ED1 have a vertical structure. However, the type of the plurality of light emitting elements ED1 is not limited thereto. Figure 6 In the embodiment, the plurality of light emitting elements ED1 are described as adopting reference Figure 1 and Figure 2A The red light emitting element 120 of the light emitting element ED1 described above. However, the present disclosure is not limited thereto. Figure 2B and Figure 2C Both the green light emitting element 130 and the blue light emitting element 140 are described. Figures 1 to 2C The plurality of light emitting elements ED1 are described in detail, so a repeated description will be omitted.

[0164] The second planarization layer 118 is disposed on the third passivation layer 117. The second planarization layer 118 may be configured as a single layer or a multilayer, and may be made of, for example, a photoresist or an acrylic-based organic material. However, the present disclosure is not limited thereto.

[0165] In addition, the second planarization layer 118 may be provided to surround a portion of the side surface portion of each of the plurality of light emitting elements ED1. For example, the second planarization layer 118 may be provided to surround the lower side surface of the first semiconductor layer 121 extending from the bottom surface of the first semiconductor layer 121 of each of the plurality of light emitting elements ED1 on the third passivation layer 117 and the assembly electrode 160. In this case, the top surface of the second planarization layer 118 may be provided below the top surface of the first electrode 124 of each of the plurality of light emitting elements ED1. However, the present disclosure is not limited thereto.

[0166] The first connection electrode CE1 is disposed on the second planarization layer 118. The first connection electrode CE1 may be disposed on a side surface of the light emitting element ED1 and electrically connect the light emitting element ED1 to the assembly electrode 160. The first connection electrode CE1 may be disposed in a region overlapping with the first assembly electrode 162 and surround at least a portion of the first semiconductor layer 121 and at least a portion of the first electrode 124 of the light emitting element ED1. In addition, the first connection electrode CE1 may extend to an upper portion of the first electrode 124 of the light emitting element ED1 and contact a portion of the auxiliary electrode 127. However, the present disclosure is not limited thereto.

[0167] In this case, in the open region of the third passivation layer 117, the first connection electrode CE1 may be electrically connected to the first assembly electrode 162 exposed through the third passivation layer 117. In addition, the first connection electrode CE1 may be disposed on the first electrode 124 of the light emitting element ED1 and extend to the upper side of the second planarization layer 118.

[0168] Meanwhile, the first electrode 124 of the light emitting element ED1 may be electrically connected to the first assembly electrode 162 but not to the second assembly electrode 163, so that the first electrode 124 of the light emitting element ED1 may be in a state of being directly insulated from the second assembly electrode 163. However, the present disclosure is not limited thereto. For example, Figure 6 It is shown that the first connection electrode CE1 is not disposed on the other side surface of the light emitting element ED1. However, the present disclosure is not limited thereto. The first connection electrode CE1 may be disposed to surround the side surface of the light emitting element ED1. Therefore, the first connection electrode CE1 may be electrically connected to both the first assembly electrode 162 and the second assembly electrode 163. However, the present disclosure is not limited thereto.

[0169] The third planarization layer 119 is disposed on the light emitting element ED1 and the first connection electrode CE1. The third planarization layer 119 can planarize the upper portion of the substrate 110 on which the light emitting element ED1 is to be disposed. The third planarization layer 119 can fix the light emitting element ED1 on the substrate 110 together with the bonding layer AD.

[0170] Therefore, the third planarization layer 119 may be disposed on one side surface of the light emitting element ED1 and adjacent to the first connection electrode CE1, and the third planarization layer 119 may be disposed on the other side surface of the light emitting element ED1 and adjacent to the side surface of the light emitting element.

[0171] In addition, the drawings show that the third planarization layer 119 is a single layer. However, the present disclosure is not limited thereto. The third planarization layer 119 may be configured as a single layer or multiple layers, and may be made of, for example, a photoresist or acrylic-based organic material. However, the present disclosure is not limited thereto.

[0172] The second connection electrode CE2 is disposed on the third planarization layer 119 .

[0173] The second connection electrode CE2 is an electrode that electrically connects the plurality of light emitting elements ED1 to the connection electrode 150. Figure 6 The second connection electrode CE2 may be electrically connected to the connection electrode 150 and the driving transistor DT through a contact hole formed in the second planarization layer 118 .

[0174] The second connection electrode CE2 may be made of a conductive material, for example, a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO). However, the present disclosure is not limited thereto.

[0175] In the following, reference will be made to Fig. 7A and Figure 7B A method of manufacturing the display device 1000 according to an embodiment of this specification is described.

[0176] Fig. 7A and Figure 7Bis a cross-sectional view for explaining a method of manufacturing a display device according to an embodiment of the present specification. Fig. 7A , a plurality of light emitting elements ED1 are loaded into a chamber CB filled with a fluid WT. The fluid WT may include water or the like, and the chamber CB filled with the fluid WT may have a shape opened at an upper side thereof.

[0177] Next, the mother substrate 10 may be positioned on the cavity CB filled with the light emitting element ED1. The mother substrate 10 is a substrate including a plurality of substrates 110 constituting the display device 1000, and the mother substrate 10 may be cut and divided into a plurality of substrates 110 later. In order to self-assemble a plurality of light emitting elements ED1, a mother substrate 10 having a plurality of low potential power supply lines and a third passivation layer 117 may be used.

[0178] Specifically, refer to Figure 7B A buffer layer 111, a gate insulating layer 112, a first interlayer insulating layer 113, a first passivation layer 114, a first planarizing layer 115 and a second passivation layer 116 are sequentially formed on a substrate 110 together with a plurality of lines and pixel circuits and an assembly electrode 160 on the second passivation layer 116.

[0179] After the display device 1000 is manufactured, the assembly electrodes 160 can be used as a pair of low potential power lines. In the process of manufacturing the display device 1000, different voltages can be applied to two adjacent assembly electrodes 160. After the process of manufacturing the display device 1000 is completed, the same low potential power voltage can be applied to two adjacent assembly electrodes 160.

[0180] The assembled electrode 160 includes a first assembled electrode 162 and a second assembled electrode 163 .

[0181] The first assembly electrode 162 is disposed on the second passivation layer 116. The first assembly electrode 162 includes a first conductive layer 162a and a first covering layer 162b configured to cover the first conductive layer 162a.

[0182] The second assembly electrode 163 is disposed on the second passivation layer 116. The second assembly electrode 163 includes a second conductive layer 163a and a second covering layer 163b configured to cover the second conductive layer 163a.

[0183] Next, the third passivation layer 117 is formed on the assembly electrode 160 .

[0184] therefore, Figure 7B The illustrated substrate 110 and the plurality of light emitting elements ED1 may be loaded into a chamber CB filled with a fluid WT, and an electric field may be formed by applying an AC voltage to the assembly electrode 160. Thus, an electric field may be formed between the first assembly electrode 162 and the second assembly electrode 163.

[0185] The light emitting element ED1 can have polarity by dielectric polarization by an electric field. In addition, the dielectrically polarized light emitting element ED1 can be fixed or moved in a specific direction by dielectrophoresis (DEP), that is, an electric field. Therefore, dielectrophoresis can be used to self-assemble a plurality of light emitting elements ED1 onto the assembly electrode 160.

[0186] Reference Figure 7B , a plurality of concavo-convex structures P are disposed on the third passivation layer 117. The plurality of concavo-convex structures P are disposed to correspond to the concave pattern CP of the light emitting element ED1. Therefore, the light emitting element ED1 may be disposed on the concavo-convex structure P and self-assembled.

[0187] The plurality of concave-convex structures P include a plurality of first concave-convex structures disposed in a plurality of first sub-pixels, a plurality of second concave-convex structures disposed in a plurality of second sub-pixels, and a plurality of third concave-convex structures disposed in a plurality of third sub-pixels. The plurality of first concave-convex structures, the plurality of second concave-convex structures, and the plurality of third concave-convex structures may be formed to correspond to the first concave pattern CP1 of the plurality of red light emitting elements 120, the second concave pattern CP2 of the plurality of green light emitting elements 130, and the third concave pattern CP3 of the plurality of blue light emitting elements 140, respectively, as shown in FIG. FIG. 2A to FIG. 2C As shown, and respectively have sizes corresponding to the first concave pattern CP1, the second concave pattern CP2 and the third concave pattern CP3. For example, a plurality of first concave-convex structures, a plurality of second concave-convex structures and a plurality of third concave-convex structures may have a planar shape that is a circular shape. The width may increase in the order of a plurality of first concave-convex structures, a plurality of second concave-convex structures and a plurality of third concave-convex structures, and the height may decrease in the order of a plurality of first concave-convex structures, a plurality of second concave-convex structures and a plurality of third concave-convex structures. Therefore, only the red light emitting element 120 can be self-assembled to the first concave pattern CP1, only the green light emitting element 130 can be self-assembled to the second concave pattern CP2, and only the blue light emitting element 140 can be self-assembled to the third concave pattern CP3.

[0188] In addition, although not Figure 7B , but an organic layer and an opening portion may be additionally provided on the third passivation layer 117. The organic layer may be provided to surround the plurality of concavo-convex structures P and include a plurality of layers to easily adjust the height.

[0189] A plurality of opening portions may be provided to overlap with the plurality of concavo-convex structures P. The plurality of opening portions may be formed to correspond to a plurality of first sub-pixels, a plurality of second sub-pixels, and a plurality of third sub-pixels. For example, the plurality of first opening portions may have a shape corresponding to the planar shape of the red light-emitting element 120, the plurality of second opening portions may have a shape corresponding to the planar shape of the green light-emitting element 130, and the plurality of third opening portions may have a shape corresponding to the planar shape of the blue light-emitting element 140. Therefore, the plurality of opening portions may facilitate the self-assembly of the plurality of light-emitting elements ED1. However, the present disclosure is not limited thereto.

[0190] Finally, when the plurality of light emitting elements ED1 are completely self-assembled, other components such as a bonding layer AD, a first connection electrode CE1, a second connection electrode CE2, a second planarization layer 118, and a third planarization layer 119 are formed, thereby completing the process of manufacturing the display device 1000.

[0191] Therefore, in the display device 1000 according to the embodiment of the present specification, a plurality of concave-convex structures P corresponding to the concave patterns CP of the plurality of light-emitting elements ED1 are provided on the mother substrate 10. For example, in the plurality of concave patterns CP, the width increases in the order of the first concave pattern CP1, the second concave pattern CP2, and the third concave pattern CP3, and the height decreases in the order of the first concave pattern CP1, the second concave pattern CP2, and the third concave pattern CP3. In this case, the concave-convex structure P is also provided so that the width increases in the order of the first concave-convex structure, the second concave-convex structure, and the third concave-convex structure, while the height decreases in the order of the first concave-convex structure, the second concave-convex structure, and the third concave-convex structure. Therefore, the red light-emitting element 120, the green light-emitting element 130, and the blue light-emitting element 140 can be self-assembled to the first concave-convex structure, the second concave-convex structure, and the third concave-convex structure, respectively. Therefore, the color mixing defect of the light-emitting element ED1 emitting light beams with different colors in one sub-pixel SP can be suppressed. Therefore, in the display device 1000 according to the embodiment of the present specification, the assembly rate of the light-emitting element ED1 can be improved.

[0192] In addition, in the display device 1000 according to the embodiment of the present specification, the opening portion for assembling the light-emitting element ED1 may not be formed separately in the mother substrate 10. In the prior art, self-assembly is performed in a state where a plurality of opening portions are formed to have different outer diameters. For example, the first opening portion is formed in a circular shape while corresponding to the outer diameter of the red light-emitting element, the second opening portion is formed in an elliptical shape while corresponding to the outer diameter of the green light-emitting element, and the third opening portion is formed in an elliptical shape different from the shape of the second opening portion while corresponding to the outer diameter of the blue light-emitting element. In contrast, in the display device 1000 according to the embodiment of the present specification, even if the opening portion is not formed, only by providing a plurality of concave-convex structures P with different shapes, the light-emitting element ED1 having a specific shape can be self-assembled only onto the plurality of concave-convex structures P. Therefore, in the display device 1000 according to the embodiment of the present specification, the process of forming a plurality of opening portions and an organic layer and the process of removing the organic layer after self-assembly are not performed, which can reduce the process cost and the number of processes.

[0193] Figure 8 is a cross-sectional view of a pixel region of a display device according to another embodiment of the present specification.

[0194] Reference Figure 8 , a substrate 110, a buffer layer 111, a gate insulating layer 1112, a first interlayer insulating layer 1113, a second interlayer insulating layer 1114, a first planarizing layer 1115, a bonding layer AD, a second planarizing layer 1118, a third planarizing layer 1119, a driving transistor DT, a light emitting element ED2, a plurality of reflective electrodes RE, a plurality of connecting electrodes CE, a light shielding layer LS and an auxiliary line LE are arranged in each of a plurality of sub-pixels SP of a display device 1100 according to another embodiment of the present specification.

[0195] A light shielding layer LS and a buffer layer 111 are disposed in each of the plurality of sub-pixels SP on the substrate 110 .

[0196] The driving transistor DT is disposed on the buffer layer 111. The driving transistor DT includes an active layer ACT, a gate electrode GE, a source electrode SE, and a drain electrode DE.

[0197] The active layer ACT is disposed on the buffer layer 111. The active layer ACT may be made of a semiconductor material such as an oxide semiconductor, amorphous silicon, or polycrystalline silicon. However, the present disclosure is not limited thereto.

[0198] The gate insulating layer 1112 is disposed on the active layer ACT. Figure 8 It is shown that the gate insulating layer 1112 is disposed on the front surface of the substrate 110. However, the present disclosure is not limited thereto. The gate insulating layer 1112 may be disposed to overlap only the gate electrode GE.

[0199] The gate electrode GE is provided on the gate insulating layer 1112 .

[0200] The first interlayer insulating layer 1113 and the second interlayer insulating layer 1114 are disposed on the gate electrode GE. Contact holes are formed in the first interlayer insulating layer 1113 and the second interlayer insulating layer 1114, and the source electrode SE and the drain electrode DE are connected to the active layer ACT through the contact holes.

[0201] The source electrode SE and the drain electrode DE are disposed on the second interlayer insulating layer 1114 and are electrically connected to the active layer ACT.

[0202] In addition, in this specification, a configuration in which a first interlayer insulating layer 1113 and a second interlayer insulating layer 1114 (i.e., a plurality of insulating layers) are provided between the gate electrode GE, the source electrode SE, and the drain electrode DE has been described. However, only a single insulating layer may be provided between the gate electrode GE, the source electrode SE, and the drain electrode DE. However, the present disclosure is not limited thereto.

[0203] In addition, if Figure 8 As shown, in the case where a plurality of insulating layers such as the first interlayer insulating layer 1113 and the second interlayer insulating layer 1114 are provided between the gate electrode GE, the source electrode SE, and the drain electrode DE, an electrode may be additionally formed between the first interlayer insulating layer 1113 and the second interlayer insulating layer 1114. The additionally formed electrode may define a capacitor together with other components provided on a lower portion of the first interlayer insulating layer 1113 or on an upper portion of the second interlayer insulating layer 1114.

[0204] The auxiliary line LE is disposed on the gate insulating layer 1112. The auxiliary line LE is an electrode that electrically connects the light shielding layer LS disposed under the buffer layer 111 to any one of the source electrode SE and the drain electrode DE on the second interlayer insulating layer 1114. For example, the light shielding layer LS may be electrically connected to any one of the source electrode SE or the drain electrode DE through the auxiliary line LE so that it does not operate as a floating gate, thereby minimizing the change in the threshold voltage of the driving transistor DT caused by the floating light shielding layer LS. The accompanying drawings show that the light shielding layer LS is connected to the drain electrode DE. However, the light shielding layer LS may be connected to the source electrode SE. However, the present disclosure is not limited thereto.

[0205] The power line VDD is disposed on the second interlayer insulating layer 1114. The power line VDD can be electrically connected to the light emitting element ED2 together with the driving transistor DT, and allows the light emitting element ED2 to emit light. The power line VDD can be made of a conductive material, for example, copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof. However, the present disclosure is not limited thereto.

[0206] The first planarization layer 1115 is disposed on the driving transistor DT and the power line VDD. The first planarization layer 1115 may planarize an upper portion of the substrate 110 on which the driving transistor DT is to be disposed.

[0207] A plurality of reflective electrodes RE spaced apart from each other are disposed on the first planarization layer 1115. The plurality of reflective electrodes RE may be used to electrically connect the light emitting element ED2 to the power line VDD and the driving transistor DT, and to function as a reflective plate that reflects light emitted from the light emitting element ED2 toward an upper portion of the light emitting element ED2. The plurality of reflective electrodes RE may each be made of a conductive material having excellent reflective properties, and reflect light emitted from the light emitting element ED2 toward an upper portion of the light emitting element ED2.

[0208] The plurality of reflective electrodes RE include a first reflective electrode RE1 and a second reflective electrode RE2. The first reflective electrode RE1 may electrically connect the driving transistor DT and the light emitting element ED2. The first reflective electrode RE1 may be connected to the source electrode SE or the drain electrode DE of the driving transistor DT through a contact hole CH1 formed in the first planarization layer 1115. In addition, the first reflective electrode RE1 may be electrically connected to the first electrode 224 of the light emitting element ED2 and the first semiconductor layer 121 through a first connection electrode CE1 described below.

[0209] The second reflective electrode RE2 can electrically connect the power line VDD to the light emitting element ED2. The second reflective electrode RE2 can be connected to the power line VDD through a contact hole CH2 formed in the first planarization layer 1115, and electrically connected to the second electrode 125 and the second semiconductor layer 123 of the light emitting element ED2 through a second connection electrode CE2 described below.

[0210] The bonding layer AD is disposed on the plurality of reflective electrodes RE. A third contact hole CH3 is disposed in the bonding layer AD, through which the first connection electrode CE1 is connected to the first reflective electrode RE1, and a fourth contact hole CH4 is disposed in the bonding layer AD, through which the second connection electrode CE2 is connected to the second reflective electrode RE2. The front surface of the substrate 110 may be coated with a bonding layer AD, and the bonding layer AD may fix the light emitting element ED2 disposed on the bonding layer AD.

[0211] The plurality of light emitting elements ED2 are disposed on the bonding layer AD in each of the plurality of sub-pixels SP.

[0212] Reference Figure 8, the light emitting element ED2 includes a first semiconductor layer 121, a first light emitting layer 122, a second semiconductor layer 123, a first electrode 224, a second electrode 125, an encapsulation layer 226, and a protective layer 227. Below, it is described assuming that the plurality of light emitting elements ED2 have a lateral structure. However, the type of the plurality of light emitting elements ED2 is not limited thereto. In addition, Figure 8 Shown is a reference Figure 4 The light emitting element ED2 described above is applied to a plurality of light emitting elements ED2. Figure 4 The light emitting element ED2 is described in detail, and thus a repeated description will be omitted.

[0213] The bonding layer AD may be disposed outside the concave pattern CP and bonded to the bottom surface of the light emitting element ED2, and the inside of the concave pattern CP may be filled with the bonding layer AD. In addition, an air gap (air) may be provided in the concave pattern CP. For example, an air gap (air) may be provided in the upper region of the concave pattern CP. However, the present disclosure is not limited thereto. The entire concave pattern CP may be filled with the bonding layer AD.

[0214] The second planarization layer 1118 and the third planarization layer 1119 are disposed on the bonding layer AD. The second planarization layer 1118 may partially overlap the side surfaces of the plurality of light emitting elements ED2, and fix and protect the plurality of light emitting elements ED2.

[0215] In addition, the first connection electrode CE1 is disposed on the second planarization layer 1118. The first connection electrode CE1 may be connected to the first reflective electrode RE1 through a third contact hole CH3 formed in the second planarization layer 118 and the bonding layer AD. Therefore, the first connection electrode CE1 may be electrically connected to any one of the source electrode SE and the drain electrode DE of the driving transistor DT through the first reflective electrode RE1. In addition, the first connection electrode CE1 may be connected to the first electrode 224 of each of the plurality of light emitting elements ED2.

[0216] The first connection electrode CE1 may be disposed to surround a side surface of each of the plurality of light emitting elements ED2 .

[0217] The third planarization layer 1119 is disposed on the first connection electrode CE1 and the plurality of light emitting elements ED2.

[0218] The second connection electrode CE2 is disposed on the third planarization layer 119. The second connection electrode CE2 is an electrode that electrically connects the light emitting element ED2 to the power supply line VDD. The second connection electrode CE2 may be connected to the second reflective electrode RE2 through a fourth contact hole CH4 formed in the third planarization layer 1119, the second planarization layer 1118, and the bonding layer AD. Therefore, the second connection electrode CE2 may be electrically connected to the power supply line VDD through the second reflective electrode RE2. In addition, the second connection electrode CE2 may be connected to the second electrode 125 of each of the plurality of light emitting elements ED2 through a contact hole formed in the third planarization layer 119. Therefore, the second connection electrode CE2 may electrically connect the power supply line VDD to the second electrode 125 of each of the plurality of light emitting elements ED2 and the second semiconductor layer 123.

[0219] In the following, reference will be made to 9A to 9H A method of manufacturing the display device 1100 according to another embodiment of the present specification is described.

[0220] 9A to 9H This is a process diagram for explaining a method of manufacturing a display device according to another embodiment of the present specification. Fig.9A 2 is a top view of a mounting substrate 2000 according to an embodiment of the present specification. Fig. 9B 1 is an enlarged plan view of an assembly region 2000A of an assembly substrate 2000 of a display device according to an embodiment of the present specification. Fig. 9C and Fig.9D 1 is a view for explaining a process of self-assembling a plurality of light emitting elements ED2 onto an assembly substrate 2000 . Fig.9E 3000 is a view for explaining a process of transferring a plurality of light emitting elements ED2 on an assembly substrate 2000 to a donor 3000 . Fig.9F and Figure 9G 3000 is a view for explaining a process of transferring a plurality of light emitting elements ED2 on a donor 3000 to a display panel PN. Figure 9H 1 is a cross-sectional view of the display device 1100 for explaining a process of forming the first connection electrode CE1 and the second connection electrode CE2.

[0221] Reference Fig.9A , the assembly substrate 2000 includes an assembly area 2000A and a peripheral area 2000B. The assembly area 2000A is an area where a plurality of light emitting elements ED2 are self-assembled. A plurality of assembly lines AL and a plurality of assembly electrodes AE are provided in the assembly area 2000A for self-assembly of the light emitting elements ED2. The peripheral area 2000B is the remaining area except the assembly area 2000A. A plurality of assembly pads, a plurality of alignment keys, etc. may be provided in the peripheral area 2000B.

[0222] Refer to FIG. 9B to FIG. 9DThe assembly substrate 2000 includes an assembly substrate 2100, a plurality of assembly lines AL, a plurality of assembly electrodes AE, a plurality of assembly pads, a plurality of concavo-convex structures P and an assembly insulating layer IL.

[0223] First, refer to FIG. 9B to FIG. 9C , a plurality of assembly lines AL and a plurality of assembly electrodes AE are arranged on an assembly substrate 2100 within the assembly area 2000A.

[0224] The plurality of assembly lines AL include a plurality of first assembly lines AL1 and a plurality of second assembly lines AL2. The plurality of first assembly lines AL1 and the plurality of second assembly lines AL2 may be arranged to be separated from each other at predetermined intervals. The plurality of first assembly lines AL1 and the plurality of second assembly lines AL2 may be arranged alternately. Different voltages may be applied to the plurality of first assembly lines AL1 and the plurality of second assembly lines AL2 so that an electric field may be formed between the plurality of first assembly lines AL1 and the plurality of second assembly lines AL2. In addition, the plurality of light emitting elements ED2 may be self-assembled between the plurality of first assembly lines AL1 and the plurality of second assembly lines AL2 by using the electric field formed between the plurality of first assembly lines AL1 and the plurality of second assembly lines AL2.

[0225] The plurality of first assembly lines AL1 each include a first line portion LP1 and a plurality of first protruding portions PP1. The first line portion LP1 is a portion extending straight along the first direction DR1 within the assembly area 2000A. The first line portion LP1 may extend from the assembly area 2000A to the peripheral area 2000B and be electrically connected to a plurality of assembly pads in the peripheral area 2000B.

[0226] The plurality of second assembly lines AL2 each include a second line portion LP2 and a plurality of second protruding portions PP2. The second line portion LP2 is a portion extending straight along the second direction DR2 within the assembly area 2000A. The second line portion LP2 may extend from the assembly area 2000A to the peripheral area 2000B and be electrically connected to a plurality of assembly pads in the peripheral area 2000B.

[0227] The plurality of assembly electrodes AE include a plurality of first assembly electrodes AE1 and a plurality of second assembly electrodes AE2. The plurality of first assembly electrodes AE1 may be connected to a plurality of first assembly lines AL1, and the plurality of second assembly electrodes AE2 may be connected to a plurality of second assembly lines AL2. A pair of first assembly electrodes AE1 and a second assembly electrode AE2 may be disposed adjacent to each other and form an electric field for self-assembling light-emitting elements ED2. In a plurality of sub-pixels SP, a pair of first assembly electrodes AE1 and a second assembly electrode AE2 may be disposed to correspond to a precise position to which the light-emitting elements ED2 are delivered.

[0228] In addition, any one of the red light emitting elements, the green light emitting elements, and the blue light emitting elements may be self-assembled, and the spacing and arrangement thereof correspond to each of the plurality of sub-pixels SP between the first assembly electrode AE1 and the second assembly electrode AE2 facing each other. For example, the red light emitting elements may be self-assembled between the first assembly electrode AE1 of the first line portion LP1 and the second assembly electrode AE2 of the fourth portion PP2b facing each other, the green light emitting elements may be self-assembled between the first assembly electrode AE1 of the second portion PP1b and the second assembly electrode AE2 of the fourth portion PP2b facing each other, and the blue light emitting elements may be self-assembled between the first assembly electrode AE1 of the second portion PP1b and the second assembly electrode AE2 of the second line portion LP2 facing each other.

[0229] Therefore, multiple first protrusions PP1 and multiple second protrusions PP2 are arranged in an staggered manner between a first assembly line AL1 and a second assembly line AL2 adjacent to each other, so that the red light-emitting element of the first sub-pixel, the green light-emitting element of the second sub-pixel, and the blue light-emitting element of the third sub-pixel can be self-assembled at one time.

[0230] Refer to Fig.9A , a plurality of assembly pads are arranged on the assembly substrate 2000 in the peripheral area 2000B. The plurality of assembly pads include a plurality of first assembly pads APAD1 and a plurality of second assembly pads APAD2. A plurality of first assembly lines AL1 and a plurality of first assembly electrodes AE1 can be connected to the plurality of first assembly pads APAD1 and receive a voltage, and a plurality of second assembly lines AL2 and a plurality of second assembly electrodes AE2 can be connected to the plurality of second assembly pads APAD2 and receive a voltage. Some of the plurality of first assembly lines AL1 can be connected to one first assembly pad APAD1, and some of the plurality of second assembly lines AL2 can be connected to one second assembly pad APAD2.

[0231] Next, let’s refer to Fig.9D The assembly insulating layer IL is disposed on the plurality of assembly lines AL and the plurality of assembly electrodes AE. The assembly insulating layer IL can protect the plurality of assembly lines AL and the plurality of assembly electrodes AE from the fluid WT, thereby suppressing defects such as corrosion of the plurality of assembly lines AL.

[0232] Reference Fig. 9B and Fig.9D , multiple concave-convex structures P are arranged on multiple assembly lines AL and multiple assembly electrodes AE.

[0233] The plurality of concavo-convex structures P may be arranged to overlap with the region between the first assembly electrode AE1 and the second assembly electrode AE2. The plurality of concavo-convex structures P may not overlap with the first assembly electrode AE1 and the second assembly electrode AE2, or may be arranged to overlap with the first assembly electrode AE1 and the second assembly electrode AE2.

[0234] In addition, thereafter, a plurality of concave-convex structures P may be formed at positions corresponding to the plurality of sub-pixels SP of the display device 1000, respectively. The plurality of concave-convex structures P may be arranged to correspond to the plurality of sub-pixels SP, respectively, in a one-to-one manner. The light-emitting element ED2 self-assembled to the plurality of concave-convex structures P may be completely transferred to the plurality of sub-pixels SP. For example, the plurality of concave-convex structures P include a plurality of first concave-convex structures P1, a plurality of second concave-convex structures P2, and a plurality of third concave-convex structures P3 of different sizes. The plurality of first concave-convex structures P1, the plurality of second concave-convex structures P2, and the plurality of third concave-convex structures P3 may be arranged to correspond to the first sub-pixel, the second sub-pixel, and the third sub-pixel, respectively.

[0235] The plurality of first concave-convex structures P1, the plurality of second concave-convex structures P2, and the plurality of third concave-convex structures P3 may have the same planar shape as each other. For example, all of the plurality of first concave-convex structures P1, the plurality of second concave-convex structures P2, and the plurality of third concave-convex structures P3 may have a circular planar shape. However, the width may increase in the order of the plurality of first concave-convex structures P1, the plurality of second concave-convex structures P2, and the plurality of third concave-convex structures P3, and the height may decrease in the order of the plurality of first concave-convex structures P1, the plurality of second concave-convex structures P2, and the plurality of third concave-convex structures P3. Therefore, the plurality of first concave-convex structures P1, the plurality of second concave-convex structures P2, and the plurality of third concave-convex structures P3 are arranged to have different sizes so that the light-emitting element ED2 can be easily self-assembled.

[0236] In addition, the planar shapes of the plurality of first concavo-convex structures P1, the plurality of second concavo-convex structures P2, and the plurality of third concavo-convex structures P3 may be different. For example, the plurality of first concavo-convex structures P1 may each have a circular planar shape, the plurality of second concavo-convex structures P2 may each have an elliptical or polygonal planar shape, and the plurality of third concavo-convex structures P3 may each have an elliptical or polygonal planar shape different from the planar shape of the second concavo-convex structures P2. However, the present disclosure is not limited thereto.

[0237] The plurality of concavo-convex structures P are made of an insulating material. For example, the plurality of concavo-convex structures P may be made of a photoresist or an organic material such as an acrylic-based material. However, the present disclosure is not limited thereto.

[0238] In addition, although not Fig.9DAs shown in FIG. 1 , an organic layer including a plurality of opening portions may be provided on a plurality of assembly lines AL and a plurality of assembly electrodes AE. The organic layer may include a plurality of layers to easily adjust the thickness. However, the present disclosure is not limited thereto.

[0239] The organic layer may include a plurality of opening portions. Thereafter, the plurality of opening portions may be formed at positions respectively corresponding to the plurality of sub-pixels SP of the display device 1000. The plurality of opening portions may be provided to correspond to the planar shape of the light emitting element ED2 so that the light emitting element ED2 may be easily self-assembled.

[0240] Reference Fig. 9C , multiple light emitting elements ED2 are self-assembled on the assembly substrate 2000.

[0241] First, a plurality of light emitting elements ED2 grown on a wafer are loaded into a chamber CB filled with a fluid WT. The fluid WT may include water or the like, and the chamber CB filled with the fluid WT may have a shape opened at an upper side thereof.

[0242] Next, the assembly substrate 2000 may be placed on the chamber CB filled with the light emitting element ED2. The assembly substrate 2000 may be disposed so that the plurality of concavo-convex structures P of the assembly substrate 2000 faces the chamber CB.

[0243] Next, the magnet MG may be placed on the assembly substrate 2000. The light emitting element ED2 submerged or suspended at the bottom of the chamber CB may be moved toward the assembly substrate 2000 by the magnetic force of the magnet MG.

[0244] In this case, the light emitting element ED2 may include a magnetic element so that the light emitting element ED1 can be moved by a magnetic field. For example, any one of the first electrode 224 and the second electrode 125 of the light emitting element ED2 may include a ferromagnetic material such as iron (Fe), cobalt (Co), or nickel (Ni) so that the direction of the light emitting element ED2 pointing to the magnet MG can be aligned.

[0245] Next, refer to Fig.9D , the light emitting element ED2 that has been moved toward the assembly substrate 2000 by the magnet MG can be self-assembled to the assembly substrate 2000 by the electric field formed between the plurality of assembly electrodes AE.

[0246] Specifically, a plurality of light-emitting elements ED2 can be self-assembled onto a plurality of concave-convex structures P by applying voltage to a plurality of assembly electrodes AE. For example, an electric field can be formed by applying different AC voltages to a plurality of first assembly electrodes AE1 and a plurality of second assembly electrodes AE2. The light-emitting element ED2 can have polarity by dielectric polarization performed by the electric field. In addition, the dielectrically polarized light-emitting element ED2 can be fixed or moved in a specific direction by dielectrophoresis (DEP), i.e., an electric field. Therefore, a plurality of light-emitting elements ED2 can be temporarily self-assembled onto a plurality of concave-convex structures P of an assembly substrate 2000 by using dielectrophoresis.

[0247] For example, refer to Fig.9D , the plurality of light emitting elements ED2 include: a plurality of red light emitting elements 220 including a first concave pattern CP1, a plurality of green light emitting elements 230 including a second concave pattern CP2, and a plurality of blue light emitting elements 240 including a third concave pattern CP3. In this case, the first concave pattern CP1, the second concave pattern CP2, and the third concave pattern CP3 have different sizes, and the plurality of first concave-convex structures P1, the plurality of second concave-convex structures P2, and the plurality of third concave-convex structures P3 are formed to correspond to the first concave pattern CP1 of the plurality of red light emitting elements 220, the second concave pattern CP2 of the plurality of green light emitting elements 230, and the third concave pattern CP3 of the plurality of blue light emitting elements 240, respectively.

[0248] Therefore, only the red light emitting elements 220 are self-assembled onto the plurality of first concavo-convex structures P1 , only the green light emitting elements 230 are self-assembled onto the plurality of second concavo-convex structures P2 , and only the blue light emitting elements 240 are self-assembled onto the plurality of third concavo-convex structures P3 .

[0249] After the self-assembly is completed, the fluid WT can be evaporated from the assembly substrate 2000. In this case, the light-emitting element ED2 can be fixed to the plurality of concave-convex structures P by forming an electric field between the assembly electrodes AE until the fluid WT is completely evaporated. In addition, the electric field can be removed after the assembly substrate 2000 is completely dried. In this case, even after the electric field is removed, the light-emitting element ED2 can be temporarily fixed to the assembly substrate 2000 by van der Waals force.

[0250] Next, refer to Fig.9E , the plurality of light emitting elements ED2 of the assembly substrate 2000 are transferred to the donor 3000 .

[0251] First, refer to Fig.9E, the assembly substrate 2000 and the donor 3000 are aligned so that the plurality of light emitting elements ED2 and the donor 3000 face each other. For example, the assembly substrate 2000 and the donor 3000 may be aligned so that the first alignment pattern of the assembly substrate 2000 and the second alignment pattern of the donor 3000 overlap each other.

[0252] After the assembly substrate 2000 and the donor 3000 are aligned, the assembly substrate 2000 and the donor 3000 may be brought into abutment with the upper portion of the light emitting element ED2 in contact with the donor 3000. In this case, the donor 3000 is made of a material having an adhesive force so that the upper portions of the plurality of light emitting elements ED2 may be bonded to the donor 3000 and moved from the assembly substrate 2000 to the donor 3000.

[0253] Next, refer to Fig.9F , the plurality of light emitting elements ED2 on the donor 3000 are transferred to the bonding layer AD of the display panel PN.

[0254] First, the donor 3000 is aligned with the display panel PN formed with the bonding layer AD. After the donor 3000 is set, the display panel PN can be aligned with the donor 3000 so that the multiple light-emitting elements ED2 of the donor 3000 and the bonding layer AD of the display panel PN face each other. When the display panel PN and the donor 3000 are aligned, the alignment key AK temporarily attached to the donor 3000 is aligned with the third alignment pattern AP3 of the display panel PN so that the donor 3000 and the display panel PN can be aligned. The third alignment pattern AP3 may be a pattern set in the non-display area NA of the display panel PN. The third alignment pattern AP3 may be made of the same material as any one of the multiple electrodes or multiple lines set on the display panel PN. For example, the third alignment pattern AP3 may have a quadrilateral shape in which an X-shaped pattern is set. Therefore, the donor 3000 and the display panel PN can be aligned so that the alignment key AK is set in the center of the X-shaped portion of the third alignment pattern AP3.

[0255] In addition, refer to Fig.9F and Figure 9G , the donor 3000 and the display device 1100 may be adjacent to each other so that the light emitting element ED2 on the donor 3000 may be transferred to the bonding layer AD. The plurality of light emitting elements ED2 disposed on the donor 3000 are arranged in an arrangement corresponding to the plurality of sub-pixels SP so that all the light emitting elements ED2 on the donor 3000 may be transferred to the display panel PN at one time without selectively transferring the light emitting elements ED2. The plurality of light emitting elements ED2 transferred to the display panel PN may be temporarily fixed by being attached to the bonding layer AD.

[0256] In addition, the alignment key AK may be transferred together with the plurality of light emitting elements ED2. The alignment key AK may be transferred to the third alignment pattern AP3 in the non-display area NA. However, since the alignment key AK transferred to the display panel PN is not connected to the separate connection electrode CE, it does not emit light.

[0257] Next, refer to Figure 9H , the light emitting element ED2 is transferred to the bonding layer AD of the display device 1100, and then a first connection electrode CE1 and a second connection electrode CE2 are formed so that the light emitting element ED2 can be electrically connected to the driving transistor DT and the power line VDD.

[0258] First, a second planarization layer 1118 and a third planarization layer 1119 are formed to cover the plurality of light emitting elements ED2. In addition, contact holes may be formed in the third planarization layer 1119, through which the first electrode 224 and the second electrode 125 of each of the plurality of light emitting elements ED2 are exposed. Contact holes may be formed in the third planarization layer 1119, the second planarization layer 1118, and the bonding layer AD, through which the first reflective electrode RE1 and the reflective electrode RE are exposed.

[0259] Next, the first and second connection electrodes CE1 and CE2 may be formed on the third planarization layer 1119. In addition, a conductive material layer may be formed on the front surface of the substrate 110, and the first and second connection electrodes CE1 and CE2 may be formed by patterning the conductive material layer.

[0260] Therefore, in the display device 1100 according to another embodiment of the present specification, the first concave-convex structure P1, the second concave-convex structure P2, and the third concave-convex structure P3 of the assembly substrate 2000 are formed to correspond to the first concave pattern CP1 of the red light emitting element 220, the second concave pattern CP2 of the green light emitting element 230, and the third concave pattern CP3 of the blue light emitting element 240. Therefore, the red light emitting element 220, the green light emitting element 230, and the blue light emitting element 240 can be self-assembled to the first concave-convex structure P1, the second concave-convex structure P2, and the third concave-convex structure P3, respectively, so that the assembly rate of the light emitting element ED2 can be improved.

[0261] In addition, in the display device 1100 according to another embodiment of the present specification, the first concavo-convex structure P1, the second concavo-convex structure P2, and the third concavo-convex structure P3 are provided to have different sizes so that only the light emitting element ED2 having a specific shape and a specific size can be self-assembled to the plurality of concavo-convex structures P. Therefore, an opening portion may not be separately formed in the assembly substrate 2000. Therefore, in the display device 1100 according to another embodiment of the present specification, a process of forming a plurality of opening portions and an organic layer may not be included.

[0262] Therefore, in the display device 1100 according to another embodiment of the present specification, since the light emitting element ED2 can be connected to the display panel without performing a bonding metal molding process and a thermal compression process, process optimization can be achieved.

[0263] Exemplary embodiments of the present disclosure can also be described as follows:

[0264] According to one aspect of the present disclosure, an assembly substrate is provided, on which a plurality of light-emitting elements can be self-assembled. The assembly substrate comprises: an assembly substrate; a plurality of first assembly electrodes, which are arranged on the assembly substrate; a plurality of second assembly electrodes, which are arranged on the assembly substrate and alternately arranged with the plurality of first assembly electrodes; and a plurality of concave-convex structures, which are arranged between the plurality of first assembly electrodes and the second assembly electrodes.

[0265] The plurality of concavo-convex structures may be disposed to overlap the plurality of first assembly electrodes and the plurality of second assembly electrodes.

[0266] The plurality of concavo-convex structures may include a plurality of first concavo-convex structures, a plurality of second concavo-convex structures, and a plurality of third concavo-convex structures, which may have different sizes.

[0267] The planar shapes of the multiple first concave-convex structures, the multiple second concave-convex structures, and the multiple third concave-convex structures can be the same as each other, wherein the width can increase in the order of the multiple first concave-convex structures, the multiple second concave-convex structures, and the multiple third concave-convex structures, and wherein the height can decrease in the order of the multiple first concave-convex structures, the multiple second concave-convex structures, and the multiple third concave-convex structures.

[0268] Plane shapes of the plurality of first concavo-convex structures, the plurality of second concavo-convex structures, and the plurality of third concavo-convex structures may be different from each other.

[0269] According to one aspect of the present disclosure, a light-emitting element is provided. The light-emitting element includes: a first semiconductor layer; a light-emitting layer disposed on the first semiconductor layer; a second semiconductor layer disposed on the light-emitting layer; a second electrode disposed in contact with the second semiconductor layer; and a first electrode disposed in contact with the first semiconductor layer, wherein a concave pattern is disposed below the first semiconductor layer.

[0270] The first electrode may be disposed under the first semiconductor layer and cover a surface of the concave pattern.

[0271] The light emitting element may further include an encapsulation layer configured to cover a side surface of the first semiconductor layer, wherein one surface of the encapsulation layer may be adjacent to the side surface of the first semiconductor layer, and another surface of the encapsulation layer may be adjacent to a first electrode extending from a bottom surface of the first semiconductor layer.

[0272] The light emitting element may further include an auxiliary electrode disposed on a side surface of the first semiconductor layer, wherein an area where the auxiliary electrode overlaps with the side surface of the first semiconductor layer may be larger than an area where the first electrode extending from the bottom surface of the first semiconductor layer overlaps with the side surface of the first semiconductor layer.

[0273] The first electrode may be disposed on the first semiconductor layer.

[0274] The light emitting element may further include an encapsulation layer disposed under the first semiconductor layer, wherein the encapsulation layer may cover a surface of the concave pattern.

[0275] The light emitting element may further include a reflective layer disposed under the first semiconductor layer, wherein the reflective layer may cover a surface of the concave pattern.

[0276] According to one aspect of the present disclosure, a display device is provided. The display device includes: a substrate on which a plurality of sub-pixels are defined; a plurality of transistors disposed on the substrate; and a light-emitting element disposed in each of the plurality of sub-pixels on the substrate, wherein a concave pattern is disposed on a lower side of the light-emitting element.

[0277] The display device may further include a first assembly electrode and a second assembly electrode disposed below the light emitting element and spaced apart from each other; and a concave-convex structure disposed between the first assembly electrode and the second assembly electrode, wherein the concave-convex structure may be provided as a concave pattern.

[0278] The display device may further include a first connection electrode configured to connect the light emitting element, the first assembly electrode, and the second assembly electrode.

[0279] The display device may further include a reflective electrode disposed under the light emitting element; and a bonding layer disposed on a bottom surface of the light emitting element and bonded to the light emitting element, wherein the inside of the concave pattern may be partially filled with the bonding layer.

[0280] An air gap (air) may be provided in the concave pattern.

[0281] Although the exemplary embodiments of the present disclosure have been described in detail with reference to the accompanying drawings, the present disclosure is not limited thereto and can be implemented in many different forms without departing from the technical concept of the present disclosure. Therefore, the exemplary embodiments of the present disclosure are provided for illustrative purposes only and are not intended to limit the technical concept of the present disclosure. The scope of the technical concept of the present disclosure is not limited thereto. Therefore, it should be understood that the above exemplary embodiments are illustrative in all aspects and do not limit the present disclosure. The scope of protection of the present disclosure should be interpreted based on the attached claims, and all technical concepts within their equivalent scope should be interpreted as falling within the scope of the present disclosure.

[0282] CROSS-REFERENCE TO RELATED APPLICATIONS

[0283] This application claims the priority of Korean Patent Application No. 10-2023-0163238 filed on November 22, 2023 in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference.

Claims

1. An assembly substrate, in which a plurality of light-emitting elements are self-assembled, the assembly substrate comprising: Component substrate; a plurality of first assembly electrodes on the component substrate; a plurality of second assembly electrodes on the assembly substrate, the plurality of second assembly electrodes alternating with the plurality of first assembly electrodes on the assembly substrate; as well as A plurality of concave-convex structures, wherein each of the plurality of concave-convex structures is between a first assembly electrode in the plurality of first assembly electrodes and a second assembly electrode in the plurality of second assembly electrodes.

2. The assembly substrate according to claim 1, wherein: The concavo-convex structure of the plurality of concavo-convex structures overlaps with a portion of a first assembled electrode of the plurality of first assembled electrodes and a portion of a second assembled electrode of the plurality of second assembled electrodes.

3. The assembly substrate according to claim 1, wherein: The multiple concave-convex structures include multiple first concave-convex structures, multiple second concave-convex structures, and multiple third concave-convex structures. The multiple first concave-convex structures respectively have a first size, the multiple second concave-convex structures respectively have a second size different from the first size, and the multiple third concave-convex structures respectively have a third size different from the first size and the second size.

4. The assembly substrate according to claim 3, wherein: The plurality of first concavo-convex structures, the plurality of second concavo-convex structures and the plurality of third concavo-convex structures have substantially the same planar shape, wherein a first width of each of the plurality of first concave-convex structures is smaller than a second width of each of the plurality of second concave-convex structures, and the second width is smaller than a third width of each of the plurality of third concave-convex structures, and The first height of each first concave-convex structure in the plurality of first concave-convex structures is greater than the second height of each second concave-convex structure in the plurality of second concave-convex structures, and the second height is greater than the third height of each third concave-convex structure in the plurality of third concave-convex structures.

5. The assembly substrate according to claim 3, wherein: The plurality of first concavo-convex structures have a first planar shape, the plurality of second concavo-convex structures have a second planar shape different from the first planar shape, and the plurality of third concavo-convex structures have a third planar shape different from the first planar shape and the second planar shape.

6. A light-emitting element, comprising: a first semiconductor layer, the first semiconductor layer comprising a concave pattern extending from a lower surface of the first semiconductor layer to an upper surface of the first semiconductor layer; a light emitting layer on the first semiconductor layer; a second semiconductor layer on the light emitting layer; a first electrode in contact with the first semiconductor layer, and A second electrode is in contact with the second semiconductor layer.

7. The light-emitting element according to claim 6, wherein The first electrode is below the first semiconductor layer, and the first electrode covers a surface of the concave pattern.

8. The light-emitting element according to claim 7, further comprising: an encapsulation layer, the encapsulation layer covering a side surface of the first semiconductor layer, The first surface of the encapsulation layer is in direct contact with the side surface of the first semiconductor layer, the second surface of the encapsulation layer is in direct contact with the first electrode, and the first electrode extends from the lower surface of the first semiconductor layer.

9. The light-emitting element according to claim 7, further comprising: an auxiliary electrode between a side surface of the first semiconductor layer and a portion of the first electrode, A first area where the auxiliary electrode overlaps the side surface of the first semiconductor layer is larger than a second area where a portion of the first electrode extending from the lower surface of the first semiconductor layer overlaps the side surface of the first semiconductor layer.

10. The light emitting element according to claim 6, wherein The first electrode is on the first semiconductor layer.

11. The light-emitting element according to claim 10, further comprising: a packaging layer, the packaging layer being arranged below the first semiconductor layer, Wherein, the encapsulation layer covers the surface of the concave pattern.

12. The light-emitting element according to claim 10, further comprising: a reflective layer, the reflective layer being below the first semiconductor layer, Wherein, the reflective layer covers the surface of the concave pattern.

13. A display device, comprising: a substrate, the substrate comprising a plurality of sub-pixels; a plurality of transistors on the substrate; as well as A light emitting element, wherein the light emitting element is in each of the plurality of sub-pixels on the substrate, The light emitting element of at least one of the plurality of sub-pixels includes a concave pattern extending from a bottom surface of the light emitting element to a top surface of the light emitting element, and the bottom surface is closer to the substrate than the top surface.

14. The display device according to claim 13, further comprising: a first assembly electrode on a first portion of the bottom surface of the light emitting element; a second assembly electrode on a second portion of the bottom surface of the light emitting element and spaced apart from the first assembly electrode; as well as a concavo-convex structure, wherein the concavo-convex structure is between the first assembly electrode and the second assembly electrode, Wherein, the concave-convex structure is in the concave pattern.

15. The display device according to claim 14, further comprising: A first connecting electrode is provided, wherein the first connecting electrode connects the light emitting element, the first assembly electrode and the second assembly electrode.

16. The display device according to claim 13, further comprising: a reflective electrode, the reflective electrode being below the bottom surface of the light emitting element; as well as a bonding layer on the bottom surface of the light emitting element, the bonding layer bonding to the light emitting element, Wherein, the interior of the concave pattern is partially filled with the bonding layer.

17. The display device according to claim 16, wherein: The concave pattern includes air gaps.

18. A display device, comprising: substrate; A plurality of assembled electrodes on the substrate, the plurality of assembled electrodes comprising a plurality of first assembled electrodes and a plurality of second assembled electrodes; an insulating layer on the plurality of assembled electrodes; a plurality of concavo-convex structures on the insulating layer, each of the plurality of concavo-convex structures overlapping with a region between a first assembled electrode in the plurality of first assembled electrodes and a second assembled electrode in the plurality of second assembled electrodes, the plurality of concavo-convex structures comprising a first concavo-convex structure having a first size and a second concavo-convex structure having a second size different from the first size; as well as A plurality of light emitting elements, the plurality of light emitting elements comprising: a first light-emitting element, the first light-emitting element emitting light of a first color and having a first concave pattern, the first concave pattern having a first concave surface size, the first concave pattern extending from a first bottom surface of the first light-emitting element to a first top surface of the first light-emitting element, the first bottom surface being closer to the substrate than the first top surface; and a second light-emitting element, the second light-emitting element emitting light of a second color and having a second concave pattern, the second concave pattern having a second concave size different from the first concave size, the second concave pattern extending from a second bottom surface of the second light-emitting element to a second top surface of the second light-emitting element, the second bottom surface being closer to the substrate than the second top surface, The first concavo-convex structure is in the first concave pattern, and the second concavo-convex structure is in the second concave pattern.

19. The display device according to claim 18, wherein: The first dimension of the first concave-convex structure includes a first width and a first height, and the second dimension of the second concave-convex structure includes a second width and a second height, and The first width is smaller than the second width, and the first height is larger than the second height.

20. The display device according to claim 18, wherein: The plurality of concavo-convex structures further include a third concavo-convex structure having a third size different from the first size and the second size, The plurality of light emitting elements further include a third light emitting element, the third light emitting element emits light of a third color and has a third concave pattern, the third concave pattern has a third concave size different from the first concave size and the second concave size, wherein the third concave pattern extends from a third bottom surface of the third light emitting element to a third top surface of the third light emitting element, the third bottom surface is closer to the substrate than the third top surface, and Wherein, the third concave-convex structure is in the third concave pattern.

21. The display device according to claim 20, wherein: The first color of light is red light, the second color of light is green light, and the third color of light is blue light.

22. The display device according to claim 18, wherein: The first concave size of the first concave pattern includes a first width and a first height, and the second concave size of the second concave pattern includes a second width and a second height. The first width is smaller than the second width, and the first height is larger than the second height.

23. The display device according to claim 18, wherein: The first concave pattern has a first planar shape, and the second concave pattern has a second planar shape different from the first planar shape.

24. The display device according to claim 23, wherein: The first concavo-convex structure has the first planar shape, and the second concavo-convex structure has the second planar shape.

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