Methods of associating regions of processing chamber, and related systems and methods
By dividing the area of the processing chamber into groups and connecting gas lines to these groups, the problems of deposition inhomogeneity and process adjustability in semiconductor processing are solved, achieving more efficient processing and lower costs.
Patent Information
- Application Number
- CN202380072730.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2022-12-20
- Filing Date
- 2023-07-13
- Publication Date
- 2025-05-23
AI Technical Summary
In semiconductor processing, existing equipment and methods have difficulty achieving deposition uniformity and process adjustability, especially in batch epitaxial processing, where deposition inhomogeneity and process adjustability are hindered.
By dividing the area of the processing chamber into a plurality of regions along the first and second directions of the processing volume, and determining the group number, the regions are divided into groups and connecting one or more gas lines to the groups such that the same gas line connection is grouped into a subset of the multiple regions in the corresponding group.
Deposition uniformity and process adjustability are achieved, processing efficiency and cost-effectiveness of the equipment are improved, while reducing the equipment footprint.
Smart Images
Figure CN120035881A_ABST
Abstract
Claims
1. A method of correlating regions of a processing chamber having a processing volume, The following steps are involved: The processing volume is divided into a plurality of regions along a first direction of the processing volume and a second direction of the processing volume, wherein the second direction intersects the first direction, and the plurality of regions have: The first area number (m) and Second area number (n); Determine the group number, the step of determining the group number comprising the following steps: Determine a first value and a second value, the first value being associated with the first region number (m) of the plurality of regions, and the second value being associated with the second region number (n) of the plurality of regions multiplying the first value by the second value; grouping the plurality of regions into a plurality of groups, the plurality of groups having a number equal to the group number; and One or more gas lines are connected to each respective group of the plurality of groups such that the same one or more gas lines are fluidly connected to a subset of the plurality of zones grouped into the respective group.
2. The method according to claim 1, wherein the step of grouping the plurality of regions comprises the following steps, for each respective region: A first grouping operation is performed, the first grouping operation grouping the corresponding area along the first direction with each other area that is symmetrical with respect to one or more physical conditions.
3. The method according to claim 2, wherein the step of grouping the plurality of regions comprises the following steps, for each respective region: A second grouping operation is performed, the second grouping operation groups the corresponding area along the second direction with each other area that is symmetrical with respect to one or more physical conditions.
4. The method according to claim 1, before the step of determining the group number, further comprising: The following steps are involved: Determining whether a first symmetry condition is satisfied for the processing volume along the first direction, the step of determining comprises the following steps: determining whether a first plane symmetry is satisfied along the first direction; and Determining whether a second symmetry condition is satisfied for the processing volume along the second direction, the determining step comprises the following steps: It is determined whether a second plane symmetry is satisfied along the first direction. The method according to claim 4 , wherein the second direction is perpendicular to the first direction.
6. The method according to claim 4, wherein if the first plane symmetry and the second plane symmetry are satisfied, then: The step of determining the first value The following steps are involved: Divide the first region number (m) by 2.0 to obtain a first result, and If the first result is not an integer, round it up to the nearest integer; and The step of determining the second value comprises the following steps: Dividing the second region number (n) by 2.0 yields a second result, and If the second result is not an integer, it is rounded up to the nearest integer.
7. The method according to claim 4, in, If the second plane symmetry is satisfied and the first plane symmetry is not satisfied, the first value is equal to the first region number (m), and the step of determining the second value comprises the following steps: Divide the second region number (n) by 2.0 to obtain a result; and If the result is not an integer, it is rounded up to the nearest integer.
8. The method according to claim 4, in, If the first plane symmetry is satisfied and the second plane symmetry is not satisfied, the second value is equal to the second region number (n), and the step of determining the first value comprises the following steps: Divide the first region number (m) by 2.0 to obtain a result; and If the result is not an integer, it is rounded up to the nearest integer.
9. The method according to claim 1, further comprising: The following steps are involved: One or more gases are supplied to each respective group in the plurality of groups such that the one or more gases are supplied to a subset of the plurality of regions grouped into the respective groups under the same gas conditions, wherein the same gas conditions include one or more of gas composition, pressure or flow rate.
10. The method according to claim 4, wherein if the first plane symmetry is satisfied, the step of grouping the plurality of regions further comprises the following steps, for each corresponding region having a first position (i) along the first direction and a second position (j) along the second direction: A first grouping operation is performed, wherein the corresponding area along the first direction is grouped with each other area having the same second position (j) along the second direction and a first reference position along the first direction, wherein the first reference position is equal to: subtracting the first position (i) from the first area number (m) plus 1.
11. The method according to claim 10, wherein if the second plane symmetry is satisfied, the step of grouping the plurality of regions comprises the following steps, for each corresponding region having the first position (i) along the first direction and the second position (j) along the second direction: A second grouping operation is performed, wherein the corresponding area along the second direction is grouped with each other area having the same first position (i) along the first direction and a second reference position along the second direction, wherein the second reference position is equal to: subtracting the second position (j) from the second area number (n) plus 1.
12. The method of claim 1, wherein the method is performed for an injection section of the process chamber and the method is repeated in a cross-flow section of the process chamber.
13. The method according to claim 1, further comprising: The following steps are involved: One or more of a flow ratio controller (FRC) or a mass flow controller (MFC) associated with a group of the plurality of groups is adjusted.
14. An apparatus for processing a substrate, include: a processing chamber having a processing volume including a plurality of regions; one or more substrate supports disposed in the processing volume; a plurality of gas openings formed in one or more sidewalls of the processing chamber; a flow guiding structure disposed in the processing volume, the flow guiding structure dividing the processing volume into a plurality of regions; a first main line fluidly connected to a first group of the plurality of zones such that the first main line is fluidly connected to a first subset of the plurality of zones grouped into the first group; and A second main line is fluidly connected to a second group of the plurality of zones such that the second main line is fluidly connected to a second subset of the plurality of zones grouped into the second group.
15. The apparatus of claim 14, wherein the first main line is configured to supply one or more gases to the first group of zones under a first gas condition, and the second main line is configured to supply one or more gases to the second group of zones under a second gas condition different from the first gas condition.
16. A system for processing a substrate, include: a processing chamber having a processing volume including a plurality of regions; one or more substrate supports disposed in the processing volume; a plurality of gas openings formed in one or more sidewalls of the processing chamber; a first main line fluidly connected to a first subset of the plurality of gas openings, the first subset aligned with a first group of the plurality of zones; a second main line fluidly connected to a second subset of the plurality of gas openings, the second subset aligned with a second group of the plurality of zones; one or more flow ratio controllers (FRCs) configured to supply one or more reactive gases to the first main line and the second main line; a first mass flow controller (MFC) configured to supply a first carrier gas to the first main line; and A second MFC is configured to supply a second carrier gas to the second main line.
17. The system of claim 16, further comprising a controller having a plurality of instructions, the plurality of instructions when executed causing a plurality of operations to be performed, the plurality of operations The following steps are involved: specifying a first gas condition of the first group and a second gas condition of the second group; and The first subset of the plurality of gas openings is supplied with the first carrier gas under the first gas condition, and the second subset of the plurality of gas openings is simultaneously supplied with the second carrier gas under the second gas condition.
18. The system of claim 16, further comprising a controller having a plurality of instructions, the plurality of instructions when executed causing a plurality of operations to be performed, the plurality of operations The following steps are involved: specifying a first gas condition of the first group and a second gas condition of the second group; and One or more supplemental reactive gases are supplied to at least one of the first main line or the second main line from one or more supplemental FRCs.
19. The system of claim 16, further comprising a controller having a plurality of instructions, the plurality of instructions when executed causing a plurality of operations to be performed, the plurality of operations The following steps are involved: exhausting a first precursor gas flow through a first exhaust valve and a first back pressure control (BPC) device when a first supply valve is closed, wherein the first supply valve is fluidly connected to the first main line; exhausting a second precursor gas flow through a second exhaust valve and a second back pressure control (BPC) device when a second supply valve is closed, wherein the second supply valve is fluidly connected to the second main line, and the first and second precursor gas flows each include the one or more reactive gases; opening the first supply valve; opening the second supply valve; closing the first exhaust valve after opening the first supply valve; and The second exhaust valve is closed after the second supply valve is opened.
20. The system of claim 16, wherein the plurality of regions are injection regions, the treatment volume comprises a plurality of side regions, and the system further include: a plurality of side gas openings formed in one or more side walls of the processing chamber, wherein the plurality of side gas openings are offset from the plurality of gas openings by at least 20 degrees; a first side main line fluidly connected to a first side subset of the plurality of side gas openings, the first side subset aligned with a first side group of the plurality of side regions; a second side main line fluidly connected to a second side subset of the plurality of side gas openings, the second side subset aligned with a second side group of the plurality of side regions; one or more side FRCs configured to supply one or more side reactive gases to the first side main line and the second side main line; a first-side MFC configured to supply a first-side carrier gas to the first-side main line; and The second-side MFC is configured to supply a second-side carrier gas to the second-side main line.