Cross-flow atomic layer deposition apparatus

Abstract

The invention provides a cross-flow atomic layer deposition apparatus. The equipment comprises an outer cavity, an inner reaction cavity, a transverse flow air inlet device, a bottom heater and a supporting clamp, the transverse flow air inlet device is positioned on one side of the inner reaction cavity and is communicated with the inner reaction cavity; the bottom surface part of the inner reaction cavity protrudes upwards to form a groove, and at least part of the bottom heater is located in the groove and attached to the bottom surface of the inner reaction cavity; the supporting clamp comprises two clamping blocks, steps extending upwards are arranged on the edges of the outer sides of the top faces of the clamping blocks, supporting faces extending horizontally are arranged at the bottoms of the clamping blocks, the two clamping blocks are arranged at the two opposite ends of the bottom heater, and the bottom of the bottom heater is fixed to the supporting faces of the bottoms of the two clamping blocks. The step surface of the clamping block is fixed with the bottom surface of the inner reaction cavity through a screw, a gap is formed between the top surface of the clamping block and the bottom surface of the inner reaction cavity, and the gap is communicated with the vacuum pump through a first through hole in the top surface of the clamping block. According to the invention, the film deposition uniformity can be improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing equipment, and in particular to a transverse flow atomic layer deposition equipment. Background Art

[0002] Atomic layer deposition (ALD) is a method that can deposit materials layer by layer on the surface of a substrate in the form of a single atomic film. Different precursors are exposed to the surface of the substrate alternately in a pulsed manner, thereby chemically adsorbing and reacting on the surface of the substrate to form a thin film.

[0003] Existing atomic layer deposition equipment can be mainly divided into two categories according to the gas inlet direction: top flow atomic layer deposition equipment and cross flow atomic layer deposition equipment. Top flow atomic layer deposition equipment supplies reaction gas into the deposition chamber through a showerhead located at the top of the deposition chamber. Cross flow atomic layer deposition equipment supplies gas through a gas supply device located on one side of the deposition chamber. The supplied reaction gas diffuses in the horizontal direction, enters the deposition chamber through the gas inlet on one side of the top of the deposition chamber, and flows through the surface of the substrate to be deposited. The residual gas is discharged through the exhaust port at the bottom of the deposition chamber and located on the other side of the gas inlet.

[0004] In existing cross-flow atomic layer deposition equipment, in order to ensure that the precursor of the reaction gas can diffuse evenly in the horizontal direction and improve the uniformity of substrate heating, the inner reaction chamber is usually made very small, and the bottom heater is set outside the inner reaction chamber. Since the bottom heater is only supported by the support shaft and is erected on the bottom surface of the substrate placement area outside the inner reaction chamber, after long-term operation, the bottom heater and the inner reaction chamber may be deformed due to aging, affecting the fit and alignment accuracy of the two, thereby affecting the coating yield and efficiency.

[0005] It should be noted that the above introduction to the technical background is only for the convenience of providing a clear and complete description of the technical solutions of the present invention and for the convenience of understanding by those skilled in the art. It cannot be considered that the above technical solutions are well known to those skilled in the art simply because these solutions are described in the background technology section of the present invention. Summary of the invention

[0006] In view of the shortcomings of the prior art mentioned above, an object of the present invention is to provide a transverse flow atomic layer deposition device to solve the problem that the bottom heater of the existing transverse flow atomic layer deposition device is only supported by a support shaft and is erected on the bottom surface of the substrate placement area outside the inner reaction chamber. After working for a long time, the bottom heater and the inner reaction chamber may be deformed due to aging, which affects the fit and alignment accuracy of the two, thereby affecting the coating yield and efficiency.

[0007] To achieve the above-mentioned purpose and other related purposes, the present invention provides a cross-flow atomic layer deposition device, which includes an outer chamber, an inner reaction chamber located inside the outer chamber, a cross-flow air inlet device, a bottom heater and a support fixture; the cross-flow air inlet device is located on one side of the inner reaction chamber and is connected to the inner reaction chamber; the bottom surface of the inner reaction chamber is partially convex upward to form a groove on the bottom surface of the inner reaction chamber, the groove corresponds to the placement area of ​​the substrate to be deposited, and the bottom heater is at least partially located in the groove and fits with the bottom surface of the inner reaction chamber; the support fixture includes two clamping blocks, an outer edge of the top surface of the clamping block is provided with an upwardly extending step, the bottom of the clamping block is provided with a horizontally extending support surface, the two clamping blocks are arranged at opposite ends of the bottom heater, and the bottom of the bottom heater is fixed on the support surfaces of the bottoms of the two clamping blocks; the step surface of the clamping block is fixed to the bottom surface of the inner reaction chamber by screws, and there is a gap between the top surface of the clamping block and the bottom surface of the inner reaction chamber, and the gap is connected to the vacuum pump through the first through hole on the top surface of the clamping block.

[0008] Optionally, the supporting surface of each clamping block is a sector-shaped surface, and the side surface of the clamping block adjacent to the bottom heater is an arc-shaped surface.

[0009] Optionally, the step height of the clamping block is 1 mm-2 mm, and the width is 3 mm-5 mm.

[0010] Optionally, a buffer insulation layer is provided between the step surface and the bottom surface of the inner reaction chamber.

[0011] Optionally, the side surface of the clamping block connected to the supporting surface is indented inwardly.

[0012] Optionally, a second through hole connected to the vacuum pump is provided on a surface of the clamping block adjacent to the bottom heater.

[0013] Optionally, the size of the groove is larger than that of the bottom heater, and the bottom heater is located in the groove and is wound with an elastic electromagnetic induction coil on the circumference.

[0014] Optionally, the transverse flow atomic layer deposition equipment further includes a heat insulation layer arranged at the periphery of the inner reaction chamber.

[0015] In another optional scheme, the cross-flow atomic layer deposition equipment also includes a supporting platform and a rotating shaft. The supporting platform corresponds to a placement area located in the inner reaction chamber. The rotating shaft is connected to the bottom surface of the supporting platform and passes through the bottom surface of the inner reaction chamber and the through hole in the middle of the clamping block in sequence until it is connected to the driving assembly.

[0016] Optionally, the lateral flow atomic layer deposition equipment further comprises a balancing block, which is disposed on the rotating shaft and spaced below the bottom heater.

[0017] As described above, the cross-flow atomic layer deposition equipment provided by the present invention has the following beneficial effects: the cross-flow atomic layer deposition equipment provided by the present invention sets the bottom heater outside the inner reaction chamber and fixes it by a specially designed support clamp, which helps to miniaturize the inner reaction chamber and helps to ensure the good fit between the bottom heater and the bottom surface of the inner reaction chamber, which helps to improve the heating efficiency and heating uniformity, thereby helping to improve the uniformity of thin film deposition and reduce the cost of equipment use. The step surface of the bottom heater and the bottom surface of the inner reaction chamber are fixed with screws, and the gap between the clamping block and the bottom surface of the inner reaction chamber is connected to the vacuum pump. Through these ingenious designs, it helps to reduce the adverse effects of thermal deformation of the equipment and helps to extend the service life of the equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 Shown is a schematic diagram of the cross-sectional structure of a lateral flow atomic layer deposition device provided by the present invention in an example.

[0019] Figures 2 to 4 Shown are schematic diagrams of the structure of the clamping block of the lateral flow atomic layer deposition equipment provided by the present invention in different directions.

[0020] Figure 5 Shown is a schematic diagram of a partial cross-sectional structure of the lateral flow atomic layer deposition device provided by the present invention in Example 2. DETAILED DESCRIPTION

[0021] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention. For example, when describing the embodiments of the present invention in detail, for the sake of convenience, the cross-sectional view showing the device structure will not be partially enlarged according to the general proportion, and the schematic diagram is only an example, which should not limit the scope of protection of the present invention. In addition, in actual production, the three-dimensional dimensions of length, width and depth should be included.

[0022] It should be noted that the diagrams provided in this embodiment are only schematic illustrations of the basic concept of the present invention, and the diagrams only show the components related to the present invention rather than the number, shape and size of the components in actual implementation. The type, quantity and proportion of each component in actual implementation may be changed at will, and the layout of the components may also be more complicated. In order to make the diagrams as concise as possible, not all structures are marked in the drawings.

[0023] Embodiment 1

[0024] like Figures 1 to 4As shown, the present invention provides a transverse flow atomic layer deposition device, which includes an outer chamber 11, an inner reaction chamber 13 located inside the outer chamber 11, a transverse flow air inlet device 14, a bottom heater 15 and a supporting fixture.

[0025] The outer chamber 11 can isolate the inner reaction chamber 13 from the external environment. Usually, a wafer inlet and outlet channel 111 is provided on the side wall of the outer chamber 11, and an exhaust port connected to the exhaust device 12 is provided at the bottom of the outer chamber 11. Through the operation of the exhaust device 12, the inner part of the outer chamber 11 can be controlled to a desired vacuum degree.

[0026] The inner reaction chamber 13 provides a deposition space, and its top cover and annular side wall can be connected in an openable and closable manner through a connector 131 located on one side of the chamber. Under this structure, the wafer can be taken and placed by opening the top cover of the inner reaction chamber 13. A top heater 132 is usually provided on the top cover, and the top heater 132 can extend from the top cover to the side wall of the inner reaction chamber 13. The top heater 132 is, for example, wound by a heating resistance wire, or a graphite heater.

[0027] The cross-flow gas inlet device 14 is located on one side of the inner reaction chamber 13 and is connected to the gas inlet of the inner reaction chamber 13, and is used to fill the reaction gas from the side of the inner reaction chamber 13 into the inner reaction chamber 13 in a horizontal direction. That is, the reaction gas is diffused onto the substrate of the inner reaction chamber 13 in a lateral flow manner. The exhaust port of the inner reaction chamber 13 is usually arranged at the bottom of the other side of the corresponding cross-flow gas inlet device 14, and the inner reaction chamber 13 and the outer chamber 11 can be connected to the same exhaust device 12. Through the cooperation of the cross-flow gas inlet device 14 and the exhaust device 12, the reaction gas flow is guided to flow horizontally through the surface of the substrate, and the residual gas is discharged through the exhaust port. In some examples, the cross-flow gas inlet device 14 may include a mixer for mixing the reaction precursor with an inert gas and a diffuser for further diffusing the gas flow containing the precursor.

[0028] In this embodiment, the bottom surface of the inner reaction chamber 13 is partially convex upward and a groove with an opening facing downward is formed on the bottom surface of the inner reaction chamber 13, and the groove corresponds to the placement area of ​​the substrate to be deposited, and the substrate is, for example, a wafer. Therefore, the portion of the bottom surface of the inner reaction chamber 13 corresponding to the wafer placement area forms a generally disc-shaped boss, which can be directly used as a carrier for placing the wafer, and the wafer is directly placed on the boss for thin film deposition. That is, in this embodiment, the carrier of the wafer is formed by the bottom surface of the inner reaction chamber 13 convex upward, and the carrier is integrated with the cavity of the inner reaction chamber 13, or in other words, in this embodiment, no additional structural parts for carrying the wafer are required, which helps to simplify the equipment structure and reduce the equipment cost, and the inner reaction chamber 13 can be further miniaturized, which is more conducive to the control of the cavity temperature and guiding the uniform diffusion of the reaction gas flow in the horizontal direction, which helps to improve the uniformity of thin film deposition. In the case where the wafer-carrying stage is formed by the bottom surface of the inner reaction chamber 13 protruding upward, the cavity material of the inner reaction chamber 13 needs to be selected from a material that is compatible with the process and has good thermal conductivity, such as aluminum alloy, titanium alloy, etc. The inner reaction chamber 13 can be integrally formed from the same material, or the portion corresponding to the protrusion can be made of a material with better thermal conductivity and heat resistance than other positions, and there is no strict restriction on this.

[0029] As the name implies, the bottom heater 15 is located at the bottom of the inner reaction chamber 13, and at least partially located in the groove, and it fits with the bottom surface of the inner reaction chamber 13 to achieve direct heating of the wafer placement area. Compared with the existing solution of setting the heater inside the cavity, it helps to reduce the volume of the inner reaction chamber 13. Preferably, the size of the groove is slightly larger than the size of the bottom heater 15, so that there is a gap between the side of the bottom heater 15 and the side of the groove, which helps to reduce the friction between the heater and the side of the groove when the bottom heater 15 is installed in the groove, and even if the bottom surface of the inner reaction chamber 13 is slightly deformed due to long-term heating, the bottom heater 15 can still be placed in the groove.

[0030] The support fixture includes two clamping blocks 16, and an upwardly extending step 161 is provided at the outer edge of the top surface 167 of the clamping block 16, that is, the step 161 is higher than the top surface of the clamping block 16. A horizontally extending support surface 162 is provided at the bottom of the clamping block 16, and the support surface 162 is used to support the bottom heater 15. The two clamping blocks 16 are arranged at opposite ends of the bottom heater 15, and the bottom heater 15 is supported by the support surface 162 of the bottom surface thereof, and the bottom of the bottom heater 15 is fixed on the support surface 162 at the bottom of the two clamping blocks 16. Therefore, the bottom heater 15 in this embodiment is not in contact with the bottom surface of the outer chamber. The bottom of the clamping block 16 can be directly in contact with the inner bottom surface of the outer chamber 11, or fixed in the outer chamber 11 through the connection of other connecting parts. The surface of the step 161 of the clamping block 16 is fixed to the bottom surface of the inner reaction chamber 13 by screws, so a plurality of screw holes 163 are provided on the surface of the step 161. For example, the screws can penetrate the support blocks from bottom to top and be embedded in the screw holes on the bottom surface of the inner reaction chamber 13, that is, the screws do not extend into the inner reaction chamber 13, and will not affect the vacuum inside the chamber. When the two are fixed by screws, the level of each clamping block 16 can be adjusted by adjusting the depth of the screws embedded into the inner reaction chamber 13, thereby adjusting the level of the bottom heater 15, so that the bottom heater 15 can be better fitted with the bottom surface of the inner reaction chamber 13 (the bottom of the inner reaction chamber 13 may bend and deform under long-term heating conditions, resulting in an uneven groove surface), which helps to improve heating stability. In this embodiment, since the clamping block 16 is connected and fixed to the bottom of the inner reaction chamber 13 through the surface of the step 161 whose edge is higher than the top surface of the clamping block 16 (the top surface 167 refers to the other surface area of ​​the top of the clamping block 16 except the surface of the step 161), there is a gap 164 between the top surface 167 of the clamping block 16 and the bottom surface of the inner reaction chamber 13. The gap 164 is connected to the vacuum pump through the first through hole 165 on the top surface 167 of the clamping block 16. Through the exhaust of the vacuum pump, it is prevented that impurity particles enter the gap and then stick to the bottom surface of the inner reaction chamber 13 to affect the heating uniformity of the cavity. In addition, when the bottom surface of the cavity is deformed due to deformation, the power of the vacuum pump can be adjusted to adjust the negative pressure adsorption force on the bottom surface of the cavity to perform certain plastic repair on the bottom surface of the cavity. In other examples, if necessary, heated inert gas can be introduced into the gap through the vacuum pump, which can play a certain insulation role on the bottom of the inner reaction chamber 13.

[0031] The cross-flow atomic layer deposition equipment provided in this embodiment sets the bottom heater outside the inner reaction chamber and fixes it by a specially designed support fixture, which helps to miniaturize the inner reaction chamber and ensures that the bottom heater fits well with the bottom surface of the inner reaction chamber, which helps to improve the heating efficiency and heating uniformity, thereby helping to improve the uniformity of thin film deposition. The bottom surface of the inner reaction chamber bulges upward to form a carrier that can carry wafers without the need to set up an independent carrier. This not only reduces the equipment components, but also the bottom heater directly heats the carrier, and the inner reaction chamber can be made very small, so only a relatively small heating power is required to achieve a good heating effect, which helps to reduce the cost of equipment use. The step surface of the bottom heater and the bottom surface of the inner reaction chamber are fixed with screws, and the gap between the clamping block and the bottom surface of the inner reaction chamber is connected to the vacuum pump. Through these ingenious designs, it helps to reduce the adverse effects of thermal deformation of the equipment and help to extend the service life of the equipment.

[0032] The bottom heater 15 can be of the same type as the top heater 132, for example, both are made of a heating wire resistance wire, or a graphite heater. In some examples, the outer peripheral surface of the bottom heater 15 can be provided with a heat insulation material layer such as graphite felt.

[0033] The clamping block 16 can be a metal block or other non-metallic block with relatively good mechanical strength, such as a ceramic block. It is particularly preferred that the material also has good thermal insulation effect. In a preferred example, the support surface 162 of each clamping block 16 is a fan-shaped surface, and the side of the clamping block 16 adjacent to the bottom heater 15 is an arcuate surface 168 to provide better support for the bottom heater 15. The support surface 162 can be further set as a semicircular surface so that the bottom surface of the bottom heater 15 falls completely on the two support surfaces 162, and the arcuate surfaces 168 of the two clamping blocks 16 circumferentially cover the bottom heater 15, which helps to reduce heat loss. However, the arcuate surface 168 is preferably not in contact with the bottom heater 15, that is, a gap is also formed between the two. In some examples, a thermal insulation material can be set on the circumference of the clamping block 16 corresponding to the bottom heater 15 to reduce heat loss.

[0034] The height of the step 161 of the clamping block 16 is preferably 1mm-2mm, and the width is preferably 3mm-5mm. In some examples, a buffer insulation layer is provided between the surface of the step 161 and the bottom surface of the inner reaction chamber 13. The buffer insulation layer is a material layer with good insulation effect and elastic compression to a certain extent, such as graphite felt, which not only helps to reduce heat loss, but also can play a buffering and protective role for the inner reaction chamber 13.

[0035] The shape of the clamping block 16 can be flexibly set as long as it can be fixed to the bottom of the inner reaction chamber 13 and provide good support. In some examples, the side surface of the clamping block 16 connected to the support surface 162 is indented inward, or the surface area of ​​the top surface is larger than the surface area of ​​the bottom surface, so that the side structure is as follows: Figures 2 to 4 As shown in the figure, an inclined surface inclined inwardly is formed in the process of extending downward from the top surface to the bottom surface, which can reduce the space occupied by the clamping block 16, and a space for accommodating other deposition components is formed at the periphery of the inclined surface. And the inclined surface can be made into an arc-shaped curved surface.

[0036] In some examples, the surface of the clamping block 16 adjacent to the bottom heater 15 is provided with a second through hole 166 connected to a vacuum pump, and the first through hole 165 and the second through hole 166 are preferably connected to the same vacuum pump, and the vacuum pump preferably also acts as an exhaust device. The second through hole 166 is connected to the vacuum pump to remove foreign particles falling into the gap between the two, and the bottom heater 15 can be more firmly attached to the clamping block 16.

[0037] As mentioned above, the size of the groove is preferably larger than the size of the bottom heater 15, so that there is a gap between the side of the bottom heater 15 and the side of the groove. In some examples, an elastic electromagnetic induction coil 21 (which can be combined with Figure 5 ). The elastic electromagnetic induction coil 21 has multiple functions, such as using its elasticity to play a buffering role, reducing the friction between the bottom heater 15 and the inner reaction chamber 13, and helping to prevent the bottom heater 15 from tilting. In addition, when necessary, the elastic electromagnetic induction coil 21 can be powered on to further improve the heating efficiency of the inner reaction chamber 13 through electromagnetic induction heating.

[0038] In order to ensure that the interior of the inner reaction chamber 13 is maintained at the required process temperature and reduce heat loss, in some examples, the cross-flow atomic layer deposition equipment also includes a thermal insulation layer arranged on the periphery of the inner reaction chamber 13. The thermal insulation layer can have a physical hardware structure, for example, the aforementioned graphite soft felt is used to coat the outer surface of the inner reaction chamber 13. In other examples, a heated inert gas can be introduced into the outer chamber 11, and the inert gas flow 22 is coated on the periphery of the inner reaction chamber 13, which can also play a role in thermal insulation and can better isolate the inner reaction chamber 13 from the external environment.

[0039] In this embodiment, the wafer-carrying platform is formed by an upward protrusion from the bottom surface of the inner reaction chamber 13. The advantage is that the equipment structure is relatively simpler. The disadvantage is that the wafer is inconvenient to rotate. For example, the wafer needs to be rotated with the help of an external rotating component, which is not very conducive to the deposition of large-size wafers. Therefore, the present invention provides another solution.

[0040] Embodiment 2

[0041] like Figure 5 As shown, this embodiment provides another structure of a cross-flow atomic layer deposition device. In the cross-flow atomic layer deposition device provided in this embodiment, the bottom surface of the inner reaction chamber 13 also bulges upward to form a groove, and the bottom heater 15 is located in the groove and supported and fixed by the clamping block 16. However, in this embodiment, a carrier 17 and a rotating shaft 18 are further provided inside the inner reaction chamber 13. The carrier 17 corresponds to the placement area located in the inner reaction chamber 13, that is, it fits with the aforementioned convex table surface. The rotating shaft 18 is connected to the bottom surface of the carrier 17, and passes through the bottom surface of the inner reaction chamber 13 and the through hole in the middle of the clamping block 16 in sequence until it is connected to the drive component 19 outside the device. The drive component 19 is, for example, a rotating component including a servo motor, and can also include a lifting structure for driving the carrier 17 to rise and fall. That is, the carrier 17 in this embodiment exists independently of the cavity of the inner reaction chamber 13. The material of the carrier 17 depends on the process, for example, a metal material such as aluminum, or a non-metallic material such as silicon carbide and aluminum nitride. The carrier 17 can fix the wafer based on electrostatic adsorption or vacuum adsorption, so electrodes or vacuum pipelines can be correspondingly provided in the carrier 17, and the corresponding conductive wires and vacuum pipelines extend to the outside of the device via the rotating shaft 18. In the case where the carrier 17 is independently provided, the thickness of the carrier 17 and the rotating shaft 18 are as small as possible to reduce the adverse effects on the heating of the wafer. Because if the carrier 17 is too thick, it will affect the heating effect, and if the rotating shaft 18 is too thick, it means that the area where the bottom heater 15 and the bottom surface of the inner reaction chamber 13 are attached is small, which affects the heating efficiency and uniformity.

[0042] In this embodiment, by providing a support platform 17 independent of the bottom surface of the inner reaction chamber 13 and a driving component that can drive the support platform 17 to rotate, the wafer can be driven to rotate during the deposition process, which helps to improve the uniformity of thin film deposition.

[0043] As mentioned above, in order to reduce the adverse effects on heating, the rotating shaft 18 is made as small as possible, but this may affect the stability during rotation and endanger the safety of the wafer. Therefore, in a preferred example, the horizontal flow atomic layer deposition equipment also includes a balance block 20, and the balance block 20 is arranged on the rotating shaft 18, and is spaced below the bottom heater 15, and the spacing distance is preferably not to affect the lifting and lowering of the carrier 17. The balance block 20 can be sleeved on the rotating shaft 18 in a threaded manner, or fixed to the rotating shaft 18 by connection with fasteners such as screws. The balance block 20 can be a stainless steel block or a graphite block, and its weight can be determined according to the size of the rotating shaft 18 and the mass of the carrier 17. In addition to the balancing effect, the arrangement of the balance block 20 below the bottom heater 15 also helps to reduce the heat loss of the bottom heater 15.

[0044] Except for the arrangement of the support platform and the rotating shaft, the arrangement of other structures of the atomic layer deposition equipment of this embodiment is the same as that of the first embodiment. Please refer to the description in the first embodiment for details, which will not be repeated for the purpose of brevity.

[0045] In summary, the present invention provides a cross-flow atomic layer deposition device, which includes an outer chamber, and an inner reaction chamber located inside the outer chamber, a cross-flow air inlet device, a bottom heater and a support clamp; the cross-flow air inlet device is located on one side of the inner reaction chamber and is connected to the inner reaction chamber; the bottom surface of the inner reaction chamber is partially convex upward to form a groove on the bottom surface of the inner reaction chamber, the groove corresponds to the placement area of ​​the substrate to be deposited, and the bottom heater is at least partially located in the groove and fits with the bottom surface of the inner reaction chamber; the support clamp includes two clamping blocks, an outer edge of the top surface of the clamping block is provided with an upwardly extending step, the bottom of the clamping block is provided with a horizontally extending support surface, the two clamping blocks are arranged at opposite ends of the bottom heater, and the bottom of the bottom heater is fixed on the support surfaces of the bottoms of the two clamping blocks; the step surface of the clamping block is fixed to the bottom surface of the inner reaction chamber by screws, and there is a gap between the top surface of the clamping block and the bottom surface of the inner reaction chamber, and the gap is connected to the vacuum pump through the first through hole on the top surface of the clamping block. The cross-flow atomic layer deposition equipment provided by the present invention sets the bottom heater outside the inner reaction chamber and fixes it by a specially designed support clamp, which helps to miniaturize the inner reaction chamber and ensures that the bottom heater fits well with the bottom surface of the inner reaction chamber, helps to improve heating efficiency and heating uniformity, thereby helping to improve the uniformity of thin film deposition and reduce the cost of equipment use. The step surface of the bottom heater and the bottom surface of the inner reaction chamber are fixed with screws, and the gap between the clamping block and the bottom surface of the inner reaction chamber is connected to the vacuum pump. Through these ingenious designs, it helps to reduce the adverse effects of thermal deformation of the equipment and help to extend the service life of the equipment.

[0046] Therefore, the present invention effectively overcomes various shortcomings in the prior art and has high industrial utilization value.

[0047] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A lateral flow atomic layer deposition device, characterized in that: The cross-flow atomic layer deposition equipment includes an outer chamber, and an inner reaction chamber located inside the outer chamber, a cross-flow air inlet device, a bottom heater and a supporting fixture; the cross-flow air inlet device is located on one side of the inner reaction chamber and is connected to the inner reaction chamber; the bottom surface of the inner reaction chamber is partially convex upward to form a groove on the bottom surface of the inner reaction chamber, the groove corresponds to the placement area of ​​the substrate to be deposited, and the bottom heater is at least partially located in the groove and fits with the bottom surface of the inner reaction chamber; the supporting fixture includes two clamping blocks, an outer edge of the top surface of the clamping block is provided with an upwardly extending step, the bottom of the clamping block is provided with a horizontally extending supporting surface, the two clamping blocks are arranged at opposite ends of the bottom heater, and the bottom of the bottom heater is fixed on the supporting surfaces at the bottom of the two clamping blocks; the step surface of the clamping block is fixed to the bottom surface of the inner reaction chamber by screws, and there is a gap between the top surface of the clamping block and the bottom surface of the inner reaction chamber, and the gap is connected to the vacuum pump through the first through hole on the top surface of the clamping block.

2. The lateral flow atomic layer deposition apparatus according to claim 1, characterized in that: The supporting surface of each clamping block is a fan-shaped surface, and the side surface of the clamping block adjacent to the bottom heater is an arc surface.

3. The lateral flow atomic layer deposition apparatus according to claim 1, characterized in that: The step height of the clamping block is 1mm-2mm and the width is 3mm-5mm.

4. The lateral flow atomic layer deposition apparatus according to claim 1, characterized in that: A buffer heat-insulating layer is arranged between the step surface and the bottom surface of the inner reaction chamber.

5. The lateral flow atomic layer deposition apparatus according to claim 1, characterized in that: The side surface of the clamping block connected to the supporting surface is indented inwardly.

6. The lateral flow atomic layer deposition apparatus according to claim 1, characterized in that: A second through hole connected to the vacuum pump is provided on the surface of the clamping block adjacent to the bottom heater.

7. The lateral flow atomic layer deposition apparatus according to claim 1, characterized in that: The size of the groove is larger than that of the bottom heater, and an elastic electromagnetic induction coil is wound around the circumference of the bottom heater located in the groove.

8. The lateral flow atomic layer deposition apparatus according to claim 1, characterized in that: The cross-flow atomic layer deposition equipment also includes a heat insulation layer arranged on the periphery of the inner reaction chamber.

9. The lateral flow atomic layer deposition apparatus according to any one of claims 1 to 8, characterized in that: The cross-flow atomic layer deposition equipment also includes a carrier platform and a rotating shaft. The carrier platform corresponds to a placement area located in the inner reaction chamber. The rotating shaft is connected to the bottom surface of the carrier platform and passes through the bottom surface of the inner reaction chamber and the through hole in the middle of the clamping block in sequence until it is connected to the driving component.

10. The lateral flow atomic layer deposition apparatus according to claim 9, characterized in that: The lateral flow atomic layer deposition equipment further comprises a balancing block, which is arranged on the rotating shaft and is spaced below the bottom heater.

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