Temperature calibration method for temperature measurement of high-temperature semiconductor equipment and temperature measurement system and method

Abstract

The invention provides a temperature calibration method and an optical temperature measurement method for temperature measurement of high-temperature semiconductor equipment, and the temperature calibration method comprises the steps: providing a standard heat source, a light filtering device, a light intensity detection device and a main control device, and pre-storing a wavelength response function # imgabs0 # of a photoelectric detection device used for the temperature measurement of the high-temperature semiconductor equipment in the main control device; performing light intensity measurement on thermal radiation emitted by the standard heat source at different set temperatures # imgabs 1 # which are not lower than 700 DEG C through a light filtering device and a light intensity detection device to obtain corresponding spectral response functions # imgabs 2 #; and obtaining a corrected central wavelength # imgabs5 # through the main control device according to the wavelength response function # imgabs3 # and each spectral response function # imgabs4 #. According to the method, by recalibrating the central wavelength of the filtering device, the limitation of singly depending on parameters provided by a filtering device manufacturer is avoided, and the performance of the filtering device in actual use can be reflected more truly, so that the temperature measurement accuracy is facilitated.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor measurement and control, and particularly to a temperature calibration method, a temperature measurement system and method for temperature measurement of high-temperature semiconductor equipment. Background Art

[0002] In the prior art, in the process of using an optical method to detect the temperature inside the reaction chamber of a high-temperature semiconductor device, such as a chemical vapor deposition device, a filter is used to perform band-pass control on the collected thermal radiation to emit light in a specific wavelength band, a photodetector and a host computer are used to convert the optical information of the light in the specific wavelength band into post-information related to radiation energy, and the corresponding measured temperature is calculated using Planck's blackbody radiation formula.

[0003] Planck's blackbody radiation formula is related to wavelength and temperature. In the prior art, Planck's blackbody radiation formula is used to calculate the corresponding measured temperature, and the wavelength is specified as a fixed wavelength, such as the central wavelength marked on the filter. However, there is an interaction between the measurable wavelength band of the photodetection device and the bandwidth of the filter, and there is a certain deviation between the actual central wavelength of the filter and the marked central wavelength. Even in high-temperature temperature measurement (above 700 degrees Celsius), non-negligible systematic errors will be introduced, thus affecting the accuracy of measurement data.

[0004] Therefore, there is an urgent need for a temperature calibration method for temperature measurement of high-temperature semiconductor equipment to improve the above problems. Summary of the Invention

[0005] The purpose of the present invention is to provide a temperature calibration method, a temperature measurement system and method for temperature measurement of high-temperature semiconductor equipment. By recalibrating the central wavelength of the filter device, the limitation of solely relying on the parameters provided by the filter device manufacturer is avoided, and the performance of the filter device in actual use can be more truly reflected, thereby being beneficial to the accuracy of temperature measurement.

[0006] In a first aspect, the present invention provides a temperature calibration method for temperature measurement of high-temperature semiconductor equipment, characterized in that the temperature calibration method includes: providing a standard heat source, a filter device, a light intensity detection device and a main control device, and the main control device pre-stores a wavelength response function for the photodetection device used for temperature measurement of the high-temperature semiconductor equipment ; performing light intensity measurement on the thermal radiation emitted by the standard heat source at different set temperatures not lower than 700 degrees Celsius through the filter device and the light intensity detection device to obtain corresponding spectral response functions ; obtaining a corrected central wavelength through the main control device according to the wavelength response function and each of the spectral response functions .

[0007] Optionally, the filter device includes a narrow-bandpass filter, and the bandwidth of the narrow-bandpass filter does not exceed 50 nanometers.

[0008] Optionally, through the main control device according to the wavelength response function and each of the spectral response functions , the step of obtaining the corrected central wavelength includes: through the main control device according to the wavelength response function and each of the spectral response functions to obtain the corrected central wavelength corresponding to each of the set temperatures , and then through each of the corrected central wavelengths the corrected central wavelength is calculated by the average value method ; the calculation formula of the corrected central wavelength is: ; ; wherein, min ~max is the working wavelength range of the photoelectric detection device, and the photoelectric detection device is used for measuring the temperature of the high-temperature semiconductor device.

[0009] Optionally, the step of measuring the light intensity of the thermal radiation emitted by the standard heat source at different set temperatures not lower than 700 degrees Celsius through the filter device and the light intensity detection device includes: controlling the standard heat source to emit each thermal radiation at different set temperatures not lower than 700 degrees Celsius; respectively receiving each of the thermal radiations through the filter device and emitting corresponding single light beams; receiving through the light intensity detection device and obtaining each of the spectral response functions according to the light information of each of the single light beams . .

[0010] Optionally, it further includes providing a photoelectric detection device pre-stored with an initial voltage-temperature correspondence function , and performing the following steps: performing photoelectric detection on the thermal radiation emitted by the standard heat source at different measurement temperatures through the photoelectric detection device and converting it into corresponding original voltage information ; performing correction processing through the main control device according to the corrected central wavelength , each of the original voltage information and the pre-stored voltage response function to obtain a corrected voltage response function ; the voltage response function is:

[0011] wherein, C and are constants, is the calibrated central wavelength of the filter device.

[0012] Optionally, the corrected voltage response function is:

[0013] wherein, is the corrected central wavelength.

[0014] Optionally, the steps of measuring the light intensity of the thermal radiation emitted by the standard heat source at different set temperatures not lower than 700 degrees Celsius through the filter device and the light intensity detection device include: controlling the standard heat source to emit each thermal radiation at different set temperatures not lower than 700 degrees Celsius; receiving each of the thermal radiations through the filter device and emitting corresponding single light beams; receiving through the light intensity detection device and obtaining each of the spectral response functions according to the light information of each of the single light beams .

[0015] Optionally, the step of controlling the standard heat source to emit each thermal radiation at different set temperatures not lower than 700 degrees Celsius includes controlling the standard heat source to reach the corresponding temperature steady state at different set temperatures of 700 to 2000 degrees Celsius and then emitting each of the thermal radiations.

[0016] In a second aspect, the present invention provides a temperature measurement system, including: a filter device for receiving thermal radiation inside a high-temperature semiconductor processing device and emitting light of a corresponding wavelength band; a photoelectric detection device disposed on the light output optical path of the filter device or connected to the filter device to achieve optical communication, for receiving and converting the light information of the specific wavelength band light into corresponding voltage information; a main control device communicatively connected to the photoelectric detection device, pre-storing a corrected voltage response function , and obtaining a measured temperature according to the corrected voltage response function and the voltage information;

[0017] wherein, is the corrected central wavelength obtained by the temperature calibration method, and C and c 2 are constants.

[0018] Optionally, the filter device includes a narrowband pass filter, and the bandwidth of the narrowband pass filter does not exceed 50 nanometers.

[0019] Optionally, the operating wavelength range of the photoelectric detection device is 200 to 1000 nanometers.​

[0020] In a third aspect, the present invention provides a temperature measurement method, including: providing a high-temperature semiconductor device and the temperature measurement system; controlling the temperature in the high-temperature semiconductor device to be not lower than 700 degrees Celsius; receiving the thermal radiation emitted from the high-temperature semiconductor device through the filter device of the temperature measurement system and emitting a single beam of a specific band; receiving through the photoelectric detection device of the temperature measurement system and converting the optical information of the single beam of the specific band into voltage information; according to the voltage information and the pre-stored corrected voltage response function through the main control device of the temperature measurement system to obtain the measured temperature.

[0021] Compared with the prior art, the beneficial effects of the temperature calibration method, the temperature measurement system and the method for measuring the temperature of a high-temperature semiconductor device of the present invention are all as follows: in the temperature calibration stage, through the filter device and the light intensity detection device, the light intensity of the thermal radiation emitted by the standard heat source at different set temperatures not lower than 700 degrees Celsius is measured to obtain the corresponding spectral response functions , and then through the main control device, according to the wavelength response function and each of the spectral response functions , the corrected central wavelength is obtained , where the wavelength response function is used for the wavelength response function of the photoelectric detection device used for measuring the temperature of the high-temperature semiconductor device , that is, by using each wavelength response function and each of the spectral response functions to correct the central wavelength of the filter device, the limitation of solely relying on the parameters provided by the filter device manufacturer is avoided, and the performance of the filter device in actual use can be more truly reflected. The obtained corrected central wavelength is applied to the high-temperature semiconductor device temperature measurement system, which can reduce or avoid the problem that the measurable band of the photoelectric detection device and the bandwidth of the filter device affect each other, and the actual central wavelength of the filter device deviates from its marked central wavelength, affecting the temperature measurement accuracy. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 is an assembly schematic diagram of a high-temperature semiconductor device and a temperature measurement device provided by an embodiment of the present invention; Figure 2 is a flowchart of a temperature calibration method applied to temperature measurement of a high-temperature semiconductor device provided by an embodiment of the present invention; Figure 3 is a graph of Q(λ) of a photodetector, of a filter, and the response curve of the photodetector to the received single beam provided by an embodiment of the present invention; Figure 4 Schematic structural diagram of a temperature measurement device including a photoelectric detection device provided by an embodiment of the present invention; Figure 5 Flowchart of an optical temperature measurement method provided by an embodiment of the present invention. Detailed implementation manners

[0023] To make the objectives, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein shall have the ordinary meanings understood by those of ordinary skill in the art in the field to which the present invention belongs. The words such as "including" used herein mean that the elements or objects appearing before this word cover the elements or objects listed after this word and their equivalents, without excluding other elements or objects.

[0024] In the present invention, the terms "first" and "second" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance. The term "plural" means two or more, unless otherwise clearly defined.

[0025] The processing chamber of a high-temperature semiconductor device, such as Figure 1 The process chamber of the vapor deposition device shown, a temperature measurement system composed of a filter device 12, a photoelectric detection device 14, and a main control device 15 is provided in Figure 1 The process chamber shown. Specifically, the filter device 12 is provided on the optical window (not shown in the figure) provided on the spray device 16 to receive the thermal radiation in the process chamber through the spray holes 17 of the spray device 16 and the optical window, and emit light in a specific wavelength band. After receiving the thermal radiation, the filter device allows light in a specific wavelength band to pass through, and its selection is determined according to the wavelength band range of the thermal radiation emitted by the temperature-measured structure. For example, taking the MOCVD process as an example, the susceptor 19 carrying the substrate 18 is controlled to reach the reaction temperature, the reaction pressure in the process chamber is controlled, and group III metal organic compound gas and group V hydride gas are provided to the substrate 18 through the spray device 16. The group III metal organic compound gas and the group V hydride gas decompose and react near the upper part of the substrate and deposit a semiconductor film on the surface of the substrate. Semiconductor films with different compositions emit thermal radiation in different wavelength bands at a certain temperature. In some specific embodiments, a heater is provided below the susceptor 19 to heat the susceptor 19, and the temperature of the substrate 18 reaches the reaction temperature requirement through the heat transfer of the susceptor 19 to the substrate 18.

[0026] The optoelectronic detection device 14 is connected to the filter device 12 for optical communication therebetween. The optoelectronic detection device 14 receives light in a specific wavelength band and converts the optical information of the specific wavelength band into electrical information, such as voltage information. The main control device 15 is electrically connected to the optoelectronic detection device 14 and calculates the measured temperature according to the pre-stored correction voltage response function and the received voltage information.

[0027] In the embodiment of the present invention, the temperature measurement system composed of the filter device 12, the optoelectronic detection device 14 and the main control device 15 is a radiation temperature measurement system.

[0028] In some embodiments, the filter device 12 is a filter.

[0029] In some embodiments, the filter device 12 is composed of a lens and a filter. The thermal radiation emitted from the optical window of the process chamber is converged by the lens and then filtered by the filter to emit light in a specific wavelength band.

[0030] In some embodiments, the filter device 12 includes a light condensing part and a filtering part, which are connected by an optical fiber. The light condensing part includes a lens for converging the thermal radiation emitted from the optical window of the process chamber. The filtering part includes a filter for receiving the light beam emitted from the light condensing part and filtering it to emit light in a specific wavelength band.

[0031] In some embodiments, the filter device 12 further includes a light condensing part disposed on the light path of the light emitted from the filtering part or the filter for converging the light in a specific wavelength band emitted from the filtering part or the filter.

[0032] In some embodiments, the optoelectronic detection device 14 is an optoelectronic detector.

[0033] In some embodiments, the main control device 15 is a host computer.

[0034] In some embodiments, the filter is a band-pass filter with a bandwidth range not exceeding 50 nanometers. In some embodiments, its bandwidth range is not less than 10 nanometers.

[0035] In some embodiments, the working wavelength range of the optoelectronic detection device is 200~1000 nanometers.

[0036] Since the bandwidth of the filter determines the spectral range through which the radiation passes, and the working wavelength range of the optoelectronic detection device determines the spectral range to which it can effectively respond. A good match of the spectral characteristics of the two can ensure the accuracy of temperature measurement.

[0037] The bandwidth of the band-pass filter is too wide, which easily introduces more noise and affects the temperature measurement accuracy. At high-temperature measurement, the intensity of thermal radiation is high enough. Limiting the bandwidth of the filter within a suitable narrow range can ensure that the effective optical signal emitted is sufficient and minimize or avoid the influence of noise. If the working wavelength range of the photoelectric detection device is too narrow, it is not easy to fully utilize the effective signal transmitted by the filter, thus affecting the temperature measurement accuracy.

[0038] In view of the problems existing in the prior art, such as Figure 2 As shown in the figure, the first embodiment of the present invention provides a temperature calibration method applied to temperature measurement of high-temperature semiconductor devices, and the temperature calibration method includes: S0: Provide a standard heat source, a filter device, a light intensity detection device, and a main control device. The main control device pre-stores a wavelength response function of a photoelectric detection device used for temperature measurement of the high-temperature semiconductor device; S1: Measure the light intensity of the thermal radiation emitted by the standard heat source at different set temperatures not lower than 700 degrees Celsius through the filter device and the light intensity detection device, and obtain corresponding spectral response functions; S2: Obtain a corrected central wavelength through the main control device according to the wavelength response function and each of the spectral response functions.

[0039] In this embodiment, the light intensity of the thermal radiation emitted by the standard heat source at different set temperatures is measured through the filter device and the light intensity detection device to obtain corresponding spectral response functions ; through the main control device, according to the wavelength response function of the photoelectric detection device used for temperature measurement of the high-temperature semiconductor device and each of the spectral response functions , a corrected central wavelength is obtained , which avoids the limitation of solely relying on the parameters provided by the filter device manufacturer, can more truly reflect the performance of the filter device in actual use, and the obtained corrected central wavelength is applied to the temperature measurement system of high-temperature semiconductor devices, which can reduce or avoid the problem that the temperature measurement accuracy is affected by the mutual influence between the measurable wavelength band of the photoelectric detection device and the bandwidth of the filter device, and there is a certain deviation between the actual central wavelength of the filter device and its marked central wavelength.

[0040] In some embodiments, the step of obtaining a corrected central wavelength through the main control device according to the wavelength response function and each of the spectral response functions includes: obtaining each of the set temperatures through the main control device according to the wavelength response function and each of the spectral response functions and each of the spectral response functions ​ The corresponding corrected central wavelength , and then through each of the corrected central wavelengths The corrected central wavelength is calculated by the average value method .

[0041] The calculation formula is: ; where, min ~max is the working wavelength range of the photoelectric detection device; i is an index variable used to identify different set temperatures . represents the spectral response function at the set temperature . The wavelength response function Q(λ) is the inherent characteristic data of the photoelectric detection device and is pre-stored in the main control device represents the corrected central wavelength at the set temperature .

[0042] It should be noted that the wavelength response function Q(λ) is used to characterize the response sensitivity of the photoelectric detection device to the intensity of light with different wavelengths. The spectral response function is used to characterize the response intensity of the light intensity detection device to the light in the specific wavelength band

[0043] In some examples, when the index variable i is a non-negative integer and i takes 1, 2,..., m, the set temperatures are , ,…, . The corrected central wavelength is: ; In some embodiments, the steps of measuring the light intensity of the thermal radiation emitted by the standard heat source at different set temperatures not lower than 700 degrees Celsius by the filter device and the light intensity detection device include: controlling the standard heat source to emit each thermal radiation at different set temperatures not lower than 700 degrees Celsius respectively; receiving each of the thermal radiations through the filter device and emitting corresponding single light beams; receiving by the light intensity detection device and obtaining each of the spectral response functions according to the light information of each of the single light beams. In some examples, 700°C < … … .

[0044] In some embodiments, the step of controlling the standard heat source to emit each thermal radiation at different set temperatures not lower than 700 degrees Celsius includes that the number of groups of the set temperatures is at least 4, and the calibration temperature is greater than or equal to 1000 degrees Celsius. In some examples, 1000°C < … 。

[0045] As shown, in some embodiments, it further includes a photoelectric detection device pre-storing an initial voltage-temperature correspondence function Figure 4 , and performing the following steps: performing photoelectric detection on the thermal radiation emitted by the standard heat source at different measured temperatures through the photoelectric detection device, and converting it into corresponding original voltage information . 。

[0046] In some embodiments, the main control device performs correction processing according to the corrected central wavelength , each of the original voltage information and the pre-stored voltage response function to obtain a corrected voltage response function .

[0047] In some embodiments, the voltage response function is:

[0048] where C and are constants, is the calibrated central wavelength of the filter device (i.e., the specific reference value provided by the manufacturer).

[0049] In some embodiments, the corrected voltage response function is:

[0050] where is the corrected central wavelength obtained by the temperature calibration method, and C and c 2 are constants.

[0051] In some examples, at the first measured temperature T1, is obtained, and at the second measured temperature , is obtained. Two constants are solved using . In some examples, multiple sets of ~ relationship data are used to fit and solve two constants.

[0052] In some examples, the measured temperature changes sequentially from the first measured temperature to the nth measured temperature. Taking the control of the temperature to the first measured temperature as an example, the standard heat source is controlled to take the first measured temperature as the target temperature until it reaches the steady state stage, and then the corresponding ​. Gradually increase the temperature and ensure that each measured temperature is used as the target temperature until the corresponding steady-state stage is reached, and then measure the corresponding . This helps to reduce measurement errors caused by temperature transients, thereby improving the reliability and accuracy of the entire temperature correction method.

[0053] In some embodiments, the step of measuring the light intensity of the thermal radiation emitted by the standard heat source at different set temperatures not lower than 700 degrees Celsius through the filter device and the light intensity detection device includes: controlling the standard heat source to emit each thermal radiation at different set temperatures not lower than 700 degrees Celsius; receiving each of the thermal radiations through the filter device and emitting corresponding single light beams; receiving through the light intensity detection device and obtaining each of the spectral response functions based on the light information of each of the single light beams .

[0054] Specifically, the spectral response function at the set temperature is ; the spectral response function at the set temperature is ; the spectral response function at the set temperature is .

[0055] In some embodiments, the step of controlling the standard heat source to emit each thermal radiation at different set temperatures not lower than 700 degrees Celsius includes controlling the standard heat source to emit each of the thermal radiations after reaching the corresponding temperature steady state at different set temperatures from 700 to 2000 degrees Celsius.

[0056] As Figure 5 shown, the second embodiment provides a temperature measurement method, including: S01, providing a high-temperature semiconductor device and a temperature measurement system composed of a filter device, a photoelectric detection device, and a main control device; S02, controlling the temperature inside the high-temperature semiconductor device to be not lower than 700 degrees Celsius; S03, receiving the thermal radiation emitted inside the high-temperature semiconductor device through the filter device and emitting a single light beam in a specific band; S04, receiving through the photoelectric detection device and converting the light information of the single light beam in the specific band into voltage information; S05, obtaining the measured temperature through the main control device according to the voltage information and the pre-stored corrected voltage response function .

[0057] ​In specific Embodiment 1, a blackbody furnace of the MIKRON M390 model is used as the standard heat source, the filter device is an Edmund #86-651 filter with a set central wavelength of 950 nm, the photoelectric detection device is a photodetector of the Thorlabs PDF10A2 model, and the main control device is a PLC, which stores .

[0058] Specifically, the blackbody furnace is controlled to set the temperatures to 1200 °C and 1500 °C respectively to perform the temperature calibration step, and the calibrated C and C2 constants are 1.867×10 6 and 1.44×10 7 . The blackbody furnace is controlled to set the temperatures to 700 °C, 800 °C, 900 °C, 1000 °C, and 1100 °C respectively. The emitted thermal radiation is processed by the filter device and the photoelectric detection device to obtain the corresponding voltage information. The main control device calculates the first measured temperature based on the calibrated constants and the corresponding voltage information. Please refer to Table 1 for the set temperature and the first measured temperature. The absolute value of the difference between each first measured temperature and the corresponding set temperature is the first deviation value. As can be seen from Table 1, even for high-temperature temperature measurement above 700 °C, the first deviation value is above 1 °C.

[0059] For the deposition of a semiconductor material layer on a substrate using a semiconductor processing device, such as an MOCVD device, precise temperature control is very important. For example, when growing a GaN layer on a silicon substrate to prepare a light-emitting diode (LED), if the temperature deviation is 1 °C, the center wavelength of the LED will deviate from the center wavelength required by the process design by more than 1 nm. In severe cases, the light-emitting performance of the prepared LED will change fundamentally. For example, the red shift of the LED center wavelength will cause the originally required blue LED to not be obtained.

[0060] In specific Embodiment 2, first, a spectrometer of the QE65000 model equipped with the filter device of Embodiment 1 is used. The main control device and the photoelectric detection device are the same as those in Embodiment 1, and it is as Figure 3 shown in. Specifically, the blackbody furnace is controlled to set the temperatures to 700 °C, 800 °C, 900 °C, 1000 °C, and 1100 °C respectively. The emitted thermal radiation passes through the filter device and the light intensity detection device to obtain their respective corresponding . For example, Figure 3 the voltage response curve of the photoelectric detection device corresponding to the set temperature of 700 °C shown for this is Figure 3 shown as The corrected center wavelength is calculated according to the calculation formula of the corrected center wavelength and the average value method. It is 952 nanometers.

[0061] Further, in Embodiment 2, using the devices and calibration steps of Embodiment 1, the set temperatures of the blackbody furnace are controlled to be 700 degrees Celsius, 800 degrees Celsius, 900 degrees Celsius, 1000 degrees Celsius, and 1100 degrees Celsius respectively. The emitted thermal radiation is processed by the filter device and the photoelectric detection device to obtain the corresponding voltage information. The main control device calculates the second measured temperature according to and the corresponding voltage information. See Table 1 for details. The absolute value of the difference between the second measured temperature and the corresponding set temperature is the second deviation value. As can be seen from Table 1, the second deviation value is significantly smaller than the first deviation value and is controlled within 0.5 degrees Celsius.

[0062] Table 1

[0063] Although the embodiments of the present invention have been described in detail above, it is obvious to those skilled in the art that various modifications and changes can be made to these embodiments. However, it should be understood that such modifications and changes are all within the scope and spirit of the present invention described in the claims. Moreover, the present invention described herein may have other embodiments and can be implemented or realized in various ways.

Claims

1. A temperature calibration method for measuring temperature of high-temperature semiconductor equipment, characterized in that: The temperature calibration method comprises: A standard heat source, a light filtering device, a light intensity detection device and a main control device are provided, wherein the main control device pre-stores a wavelength response function of a photoelectric detection device used for measuring the temperature of the high-temperature semiconductor device. ; The standard heat source is set at different temperatures not less than 700 degrees Celsius by the filter device and the light intensity detection device. The light intensity of the thermal radiation emitted under the condition is measured to obtain the corresponding spectral response functions ; The main control device is configured to detect the wavelength response function And each of the spectral response functions , and the corrected central wavelength is obtained .

2. The temperature calibration method according to claim 1, characterized in that: The optical filtering device comprises a narrow band pass filter, the bandwidth of which does not exceed 50 nanometers.

3. The temperature calibration method according to claim 1, characterized in that: The main control device is configured to detect the wavelength response function And each of the spectral response functions , and the corrected central wavelength is obtained The steps include: The main control device is configured to detect the wavelength response function And each of the spectral response functions Get the set temperature The corresponding corrected central wavelength , and then through each of the correction center wavelengths The corrected central wavelength is calculated by the average value method ; The corrected central wavelength The calculation formula is: ； Among them, min ~max is the operating wavelength range of the photoelectric detection device.

4. The temperature calibration method according to claim 1, characterized in that: The standard heat source is set at different temperatures not less than 700 degrees Celsius by the filter device and the light intensity detection device. The steps of measuring the light intensity of the thermal radiation emitted by the Controlling the standard heat source to emit heat radiation at different set temperatures not less than 700 degrees Celsius; Receiving each of the thermal radiations respectively through the optical filtering device, and emitting corresponding single light beams; The light intensity detection device receives and obtains the spectral response functions according to the light information of each single light beam. .

5. The temperature calibration method according to claim 1, characterized in that: Also includes providing a pre-stored initial voltage-temperature corresponding function The photoelectric detection device, and performing the following steps: The photoelectric detection device detects the standard heat source at different measuring temperatures. The thermal radiation emitted by the photoelectric detection is converted into the corresponding original voltage information ; The main control device corrects the central wavelength according to the , each of the original voltage information And the pre-stored voltage response function Perform correction processing to obtain the corrected voltage response function ; The voltage response function for: Among them, C and is a constant, is the calibrated central wavelength of the optical filter device.

6. The temperature calibration method according to claim 5, characterized in that: The modified voltage response function for: in, is the corrected central wavelength.

7. The temperature calibration method according to claim 1, characterized in that: The standard heat source is set at different temperatures not less than 700 degrees Celsius by the filter device and the light intensity detection device. The steps of measuring the light intensity of the thermal radiation emitted by the Controlling the standard heat source to emit heat radiation at different set temperatures not less than 700 degrees Celsius; Receiving each of the thermal radiations respectively through the optical filtering device, and emitting corresponding single light beams; The light intensity detection device receives and obtains the spectral response functions according to the light information of each single light beam. .

8. The temperature calibration method according to claim 7, characterized in that: The step of controlling the standard heat source to emit each heat radiation at different set temperatures not lower than 700 degrees Celsius includes controlling the standard heat source to emit each heat radiation after reaching a corresponding temperature steady state at different set temperatures of 700-2000 degrees Celsius.

9. A temperature measurement system, characterized in that: include: A filter device for receiving thermal radiation from high-temperature semiconductor processing equipment and emitting light of a corresponding wavelength band; A photoelectric detection device, arranged on the light output path of the filter device or connected to the filter device to achieve optical communication, for receiving and converting the optical information of the light in the specific wavelength band into corresponding voltage information; The main control device is connected to the photoelectric detection device and has a pre-stored corrected voltage response function. , according to the modified voltage response function and the voltage information to obtain a measured temperature; in, The corrected central wavelength is obtained by the temperature calibration method according to any one of claims 1 to 8, and C and c2 are constants.

10. The temperature measurement system according to claim 9, characterized in that: The optical filtering device comprises a narrow band pass filter, the bandwidth of which does not exceed 50 nanometers.

11. The temperature measurement system according to claim 9, characterized in that: The working wavelength range of the photoelectric detection device is 200-1000 nanometers.

12. A temperature measurement method, characterized in that: include: Provide a high temperature semiconductor device and the temperature measurement system according to claim 9; Controlling the temperature in the high-temperature semiconductor device to be no less than 700 degrees Celsius; The optical filter device of the temperature measurement system receives the thermal radiation emitted from the high-temperature semiconductor device and emits a single light beam of a specific wavelength band; The photoelectric detection device of the temperature measurement system receives and converts the optical information of the single light beam in the specific wavelength band into voltage information; The main control device of the temperature measurement system is used to modify the voltage response function according to the voltage information and the pre-stored voltage response function. Get the measured temperature.

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