Method, system and equipment for measuring initial sheet resistance of film formation and storage medium

Abstract

The invention discloses a film forming initial sheet resistance measuring method, system and device and a storage medium, and belongs to the technical field of resistance measurement, and the method comprises the steps: building a theoretical relational expression of the initial sheet resistance of a film, the interval time from the film forming moment to the measuring moment, and the measured value of the sheet resistance at the measuring moment; the interval time from the film forming moment of the to-be-measured film to the preset measurement moment and the square resistance measurement value at the preset measurement moment are obtained; and determining the theoretical initial sheet resistance value of the to-be-measured film according to the interval time from the film forming moment to the preset measurement moment, the sheet resistance measurement value at the preset measurement moment and the theoretical relational expression. According to the method, the theoretical relational expression of the initial sheet resistance of the thin film, the interval time from the film forming moment to the measuring moment and the sheet resistance measured value at the measuring moment is established, and the initial sheet resistance can be obtained by obtaining the sheet resistance measured value after film forming and the corresponding interval time from the film forming moment to the measuring moment based on the theoretical relational expression. Therefore, the influence of the measurement time on the measurement result of the thin film sheet resistance can be reduced.

Description

Technical Field

[0001] The present application relates to the technical field of resistance measurement, and particularly relates to a method, system, device and computer-readable storage medium for measuring the initial sheet resistance during thin film formation. Background Art

[0002] In the semiconductor manufacturing industry, for metal thin film deposition equipment (including but not limited to Physical Vapor Deposition (PVD), Chemical Vapor Deposition (CVD), etc.), it is necessary to deposit a thin film of a certain thickness, and then measure its sheet resistance (hereinafter referred to as sheet resistance) and thickness. Based on this, information such as the resistance and resistivity of the thin film can be judged to monitor the process quality of the equipment. However, when the metal thin film is exposed to air, oxidation occurs on the surface layer, resulting in a change in its surface layer resistance, and the oxidation will continue to intensify as the exposure time increases. Specifically, the sheet resistance of the metal thin film continuously increases as the interval time from film formation to measurement becomes longer. At advanced semiconductor technology nodes, the deposition thickness of some metal thin film processes has been reduced to the nanometer level, and the resistance generated by the oxidation of this film layer surface accounts for an increasing proportion in the measurement, bringing greater interference to the monitoring and judgment of the thin film deposition quality. Summary of the Invention

[0003] The purpose of the present application is to provide a method, system, device and computer-readable storage medium for measuring the initial sheet resistance during thin film formation, so as to reduce the influence of the measurement time on the thin film sheet resistance measurement result.

[0004] To achieve the above purpose, the present application provides a method for measuring the initial sheet resistance during thin film formation, including:

[0005] Establishing a theoretical relationship among the initial sheet resistance of the thin film, the interval time from the film formation moment to the measurement moment, and the sheet resistance measurement value at the measurement moment;

[0006] Obtaining the interval time from the film formation moment of the thin film to the preset measurement moment and the sheet resistance measurement value at the preset measurement moment;

[0007] Determining the theoretical initial sheet resistance value of the thin film to be measured according to the interval time from the film formation moment to the preset measurement moment, the sheet resistance measurement value at the preset measurement moment, and the theoretical relationship.

[0008] Optionally, the establishing a theoretical relationship among the initial sheet resistance of the thin film, the interval time from the film formation moment to the measurement moment, and the sheet resistance measurement value at the measurement moment includes:

[0009] Under the condition that the atmospheric environment parameters and other thin-film characteristic parameters except the thickness remain unchanged, obtain the sheet resistance measurement values of the thin-film samples with different thicknesses at different measurement times after the film-forming time, and the interval time from the film-forming time to the measurement time corresponding to the sheet resistance measurement values;

[0010] According to the sheet resistance measurement values at each measurement time and the interval time from the film-forming time to the measurement time corresponding to the sheet resistance measurement values, establish a theoretical relationship among the initial sheet resistance of the thin film, the interval time from the film-forming time to the measurement time, and the sheet resistance measurement value at the measurement time.

[0011] Optionally, the obtaining of the sheet resistance measurement values of the thin-film samples with different thicknesses at different measurement times after the film-forming time, and the interval time from the film-forming time to the measurement time corresponding to the sheet resistance measurement values under the condition that the atmospheric environment parameters and other thin-film characteristic parameters except the thickness remain unchanged includes:

[0012] Obtain the sheet resistance measurement values of the thin-film samples with different thicknesses at different measurement times after the film-forming time, and the interval time from the film-forming time to the measurement time corresponding to the sheet resistance measurement values under the condition that the atmospheric environment parameters and other thin-film characteristic parameters except the thickness remain unchanged; the interval time is greater than 10 minutes.

[0013] Optionally, the theoretical relationship is:

[0014] Rm = f(t, R0) = a×ln(t)+(b×R0 + c)×t + d×R0 + e;

[0015] Wherein, R0 represents the initial sheet resistance; Rm represents the sheet resistance measurement value at the measurement time; t represents the interval time from the measurement time to the film-forming time; a represents a first function related to the atmospheric environment parameters and the thin-film characteristic parameters; b represents a second function related to the atmospheric environment parameters and the thin-film characteristic parameters; c represents a third function related to the atmospheric environment parameters and the thin-film characteristic parameters; d represents a fourth function related to the atmospheric environment parameters and the thin-film characteristic parameters; e represents a fifth function related to the atmospheric environment parameters and the thin-film characteristic parameters.

[0016] Optionally, the obtaining of the sheet resistance measurement value at the preset measurement time includes:

[0017] Obtain the sheet resistance measurement value at the preset measurement time detected by a four-probe sheet resistance tester.

[0018] To achieve the above object, the present application further provides a system for measuring the initial sheet resistance of a thin film, which includes:

[0019] A theoretical relationship establishment module, configured to establish a theoretical relationship among the initial sheet resistance of the thin film, the time interval from the film formation time to the measurement time, and the measured value of the sheet resistance at the measurement time;

[0020] A data acquisition module, configured to acquire the time interval from the film formation time to a preset measurement time and the measured value of the sheet resistance at the preset measurement time of the thin film to be measured;

[0021] A theoretical initial sheet resistance calculation module, configured to determine the theoretical initial sheet resistance value of the thin film to be measured according to the time interval from the film formation time to the preset measurement time, the measured value of the sheet resistance at the preset measurement time, and the theoretical relationship.

[0022] Optionally, the theoretical relationship establishment module includes:

[0023] A sample data acquisition unit, configured to acquire the measured values of the sheet resistance of thin film samples with different thicknesses at different measurement times after the film formation time and the time interval from the film formation time to the measurement time corresponding to the measured value of the sheet resistance, under the condition that the atmospheric environment parameters and other thin film characteristic parameters except the thickness remain unchanged;

[0024] A theoretical relationship establishment unit, configured to establish a theoretical relationship among the initial sheet resistance of the thin film, the time interval from the film formation time to the measurement time, and the measured value of the sheet resistance at the measurement time according to the measured values of the sheet resistance at each measurement time and the time interval from the film formation time to the measurement time corresponding to the measured value of the sheet resistance.

[0025] Optionally, the sample data acquisition unit is specifically configured to:

[0026] Acquire the measured values of the sheet resistance of thin film samples with different thicknesses at different measurement times after the film formation time and the time interval from the film formation time to the measurement time corresponding to the measured value of the sheet resistance, under the condition that the atmospheric environment parameters and other thin film characteristic parameters except the thickness remain unchanged; the time interval is greater than 10 minutes.

[0027] To achieve the above object, the present application further provides a device for measuring the initial sheet resistance of a thin film, including:

[0028] A memory, configured to store a computer program;

[0029] A processor, configured to implement the steps of the method for measuring the initial sheet resistance of a thin film as described above when executing the computer program.

[0030] To achieve the above object, the present application also provides a computer-readable storage medium, on which a computer program is stored. When the computer program is executed by a processor, the steps of the initial sheet resistance measurement method for thin film film formation as described above are implemented.

[0031] A method for measuring the initial sheet resistance of thin film film formation provided by the present application includes: establishing a theoretical relationship among the initial sheet resistance of the thin film, the time interval from the film formation moment to the measurement moment, and the measured value of the sheet resistance at the measurement moment; obtaining the time interval from the film formation moment to the preset measurement moment and the measured value of the sheet resistance at the preset measurement moment for the thin film to be measured; and determining the theoretical initial sheet resistance value of the thin film to be measured according to the time interval from the film formation moment to the preset measurement moment, the measured value of the sheet resistance at the preset measurement moment, and the theoretical relationship.

[0032] Obviously, the present application establishes a theoretical relationship among the initial sheet resistance of the thin film, the time interval from the film formation moment to the measurement moment, and the measured value of the sheet resistance at the measurement moment. Based on this theoretical relationship, by obtaining the measured value of the sheet resistance after film formation and the corresponding time interval from the film formation moment to the measurement moment, the initial sheet resistance can be obtained. Therefore, the influence of the measurement time on the measurement result of the thin film sheet resistance can be reduced, and thus the process quality of the equipment can be better monitored. The present application also provides a system, device, and computer-readable storage medium for measuring the initial sheet resistance of thin film film formation, which have the above beneficial effects. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only the embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained according to the provided drawings without creative efforts.

[0034] Figure 1 It is a flowchart of a method for measuring the initial sheet resistance of thin film film formation provided by an embodiment of the present application;

[0035] Figure 2 It is a schematic flow diagram of a method for measuring the initial sheet resistance of thin film film formation provided by an embodiment of the present application;

[0036] Figure 3 It is a relationship diagram between the sheet resistance of a metal thin film under different thickness conditions and the measurement moment provided by an embodiment of the present application;

[0037] Figure 4 It is a structural block diagram of a system for measuring the initial sheet resistance of thin film film formation provided by an embodiment of the present application. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0038] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the following will clearly and completely describe the technical solutions in the embodiments of this application with reference to the accompanying drawings in the embodiments of this application. Obviously, the described embodiments are part of the embodiments of this application, rather than all of them. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in this application without creative efforts belong to the scope of protection of this application.

[0039] Please refer to Figure 1 , Figure 1 , which is a flowchart of a method for measuring the initial sheet resistance of a thin film provided by an embodiment of this application. The method may include:

[0040] S101: Establish a theoretical relationship among the initial sheet resistance of the thin film, the time interval from the film formation moment to the measurement moment, and the measured sheet resistance value at the measurement moment.

[0041] It should be noted that the thin film in this embodiment includes but is not limited to metal thin films, and is also applicable to thin films that are easily oxidized by gases.

[0042] The atmospheric composition, temperature, humidity, and acidity of the semiconductor manufacturing workshop are all controlled within a very stable level. In this environment, there is an approximate functional relationship between the sheet resistance of the thin film and the characteristics of the thin film such as composition, density, lattice coefficient, thickness, etc., and the exposure time in the air. This embodiment does not limit the specific method of establishing the theoretical relationship. For example, it may be to obtain the measured sheet resistance values of thin film samples with different thicknesses at different measurement moments after the film formation moment and the time interval from the film formation moment to the measurement moment corresponding to the measured sheet resistance value under the condition that the atmospheric environment parameters and other thin film characteristic parameters except thickness remain unchanged; according to the measured sheet resistance values at each measurement moment and the time interval from the film formation moment to the measurement moment corresponding to the measured sheet resistance value, establish a theoretical relationship among the initial sheet resistance of the thin film, the time interval from the film formation moment to the measurement moment, and the measured sheet resistance value at the measurement moment. This method is to establish a theoretical relationship based on the measured multiple groups of sheet resistance measurement values and interval time data at different thicknesses by controlling the atmospheric environment parameters and other thin film characteristic parameters except thickness to remain unchanged and only changing the thickness.

[0043] In addition, in this embodiment, any thin film characteristic parameter other than thickness may also be changed, and the atmospheric environment parameters and other thin film characteristic parameters except this parameter are controlled to remain unchanged; obtain the measured sheet resistance values of the thin film sample at different measurement moments after the film formation moment and the time interval from the film formation moment to the measurement moment corresponding to the measured sheet resistance value under this condition; according to the measured sheet resistance values at each measurement moment and the time interval from the film formation moment to the measurement moment corresponding to the measured sheet resistance value, establish a theoretical relationship among the initial sheet resistance of the thin film, the time interval from the film formation moment to the measurement moment, and the measured sheet resistance value at the measurement moment.

[0044] This embodiment does not limit the specific structure of the theoretical relationship. Different ways of establishing the theoretical relationship can obtain different theoretical relationships. For example, when establishing a theoretical relationship based on multiple sets of sheet resistance measurement values and interval time data under the condition of changing thickness, the established theoretical relationship can be:

[0045] Rm = f(t, R0) = a×ln(t)+(b×R0 + c)×t + d×R0 + e;

[0046] Wherein, R0 represents the initial sheet resistance; Rm represents the measured value of the sheet resistance at the measurement time; t represents the interval time from the measurement time to the film formation time; a represents a first function related to the atmospheric environment parameters and the film characteristic parameters; b represents a second function related to the atmospheric environment parameters and the film characteristic parameters; c represents a third function related to the atmospheric environment parameters and the film characteristic parameters; d represents a fourth function related to the atmospheric environment parameters and the film characteristic parameters; e represents a fifth function related to the atmospheric environment parameters and the film characteristic parameters.

[0047] It should be noted that the function values of a, b, c, d, and e are related to the characteristics of the film such as composition, density, thickness, etc. and the atmospheric environment. When the atmospheric environment conditions (composition, temperature and humidity, acidity and alkalinity, etc.) and the main film characteristics (such as composition, density, lattice coefficient, etc.) are determined and the thickness change is small, the function values of a, b, c, d, and e can be approximately considered as constants. Therefore, the following theoretical relationship can be deduced from this formula:

[0048]

[0049] In addition, it should also be noted that when establishing a theoretical relationship based on multiple sets of sheet resistance measurement values and interval time data under the condition of changing other film characteristic parameters except thickness, due to the change of the film characteristic parameters, the function values of a, b, c, d, and e change accordingly. And when the change of the changed film characteristic parameter is small, the function values of a, b, c, d, and e can also be approximately considered as constants.

[0050] This embodiment does not limit the acquisition of the measured values of the sheet resistance of the film sample at different measurement times after the film formation time. The corresponding method for obtaining the measured values of the sheet resistance can be determined according to the selected sheet resistance measurement method. For example, it can be to obtain the measured values of the sheet resistance of the film sample detected by a four-probe sheet resistance tester at different measurement times after the film formation time.

[0051] Further, since it is impossible to guarantee immediate measurement of the sheet resistance at the film formation moment after film formation, in this embodiment, under the condition that the atmospheric environment parameters and other film characteristic parameters except thickness remain unchanged, the sheet resistance measurement values of thin film samples with different thicknesses at different measurement moments after the film formation moment, and the time interval from the film formation moment to the measurement moment corresponding to the sheet resistance measurement value are obtained; the time interval can be greater than 10 minutes.

[0052] S102: Obtain the time interval from the film formation moment of the thin film to be measured to the preset measurement moment and the sheet resistance measurement value at the preset measurement moment.

[0053] This embodiment does not limit the method of obtaining the sheet resistance measurement value at the preset measurement moment. The corresponding method of obtaining the sheet resistance measurement value can be determined according to the selected sheet resistance measurement method. For example, it can be to obtain the sheet resistance measurement value detected by a four-probe sheet resistance tester at the preset measurement moment.

[0054] This embodiment does not limit the specific moment of the preset measurement moment, which can be any moment after film formation.

[0055] S103: Determine the theoretical initial sheet resistance value of the thin film to be measured according to the time interval from the film formation moment to the preset measurement moment, the sheet resistance measurement value at the preset measurement moment, and the theoretical relationship formula.

[0056] By substituting the time interval from the film formation moment to the preset measurement moment and the sheet resistance measurement value at the preset measurement moment into the theoretical relationship formula of the initial sheet resistance of the thin film, the time interval from the film formation moment to the measurement moment, and the sheet resistance measurement value at the measurement moment, the initial sheet resistance at film formation can be obtained.

[0057] Based on the above embodiments, the present application establishes a theoretical relationship formula for the initial sheet resistance of the thin film, the time interval from the film formation moment to the measurement moment, and the sheet resistance measurement value at the measurement moment. Based on this theoretical relationship formula, by obtaining the sheet resistance measurement value after film formation and the corresponding time interval from the film formation moment to the measurement moment, the initial sheet resistance can be obtained. Therefore, the influence of the measurement time on the sheet resistance measurement result of the thin film can be reduced, and thus the process quality of the device can be better monitored.

[0058] The following combines specific examples to illustrate the above process of measuring the initial sheet resistance at film formation of the thin film. Please refer to Figure 2 , Figure 2 is a schematic flowchart of a method for measuring the initial sheet resistance at film formation of a thin film provided by an embodiment of the present application. The process is as follows:

[0059] 1. Use the same process method to make a thickness window near the process target thickness value and deposit metal thin films with different thicknesses. Then, perform multiple sheet resistance tests on these metal thin films with the same characteristics such as composition, density, and lattice coefficient at different times;

[0060] 2. Based on the collected square resistance measurement values ​​and the corresponding interval time from the film formation time to the measurement time, establish the empirical formula Rm = f(t, R0) = a × ln(t) + (b × R0 + c) × t + d × R0 + e, and then inversely deduce the empirical formula of the film initial square resistance R0 and the square resistance measurement value Rm and the interval time t from the film formation time to the measurement time:

[0061]

[0062] It should be noted that since the square resistance at t = 0 cannot be measured, the empirical formula Rm = f(t, R0) is also obviously distorted at t = 0. In practical applications, the measured square resistance corresponding to a shorter interval time after film formation (the interval time is greater than 10 minutes) is generally selected as R0, such as the square resistance when the interval time after film formation is 30 minutes;

[0063] 3. Assume that the metal film forming time is t1, the film resistance measurement time is t2, and the resistance measurement value is Rm. Enter the formula Ro = g (t2-t1, Rm) into the intelligent production system;

[0064] 4. When measuring the sheet resistance of the thin film, the intelligent production system calculates the interval time t by monitoring the film deposition time and the sheet resistance measurement time; after the measuring equipment (such as a four-probe sheet resistance tester) feeds back the direct sheet resistance measurement value Rm to the intelligent production system, the intelligent production system outputs R0 through the input formula Ro=g(t2-t1,Rm). When the production monitoring system is not intelligent enough and human resources are sufficient, the initial sheet resistance R0 of the thin film can also be calculated manually (with the help of a calculator or Excel formula).

[0065] Please refer to Figure 3 This figure shows a PVD deposition of a Ti content / N content = 1 in a semiconductor workshop with a stable atmospheric environment using the same process parameters. The thickness range is The TiN film was tested for sheet resistance multiple times at different times, and the measured values ​​under different thickness conditions and the corresponding film-forming to measurement interval data were obtained. Assuming that the sheet resistance of the film when the interval time from film-forming to measurement is t=1hrs is R0, and the measured sheet resistance when the interval time from film-forming to measurement is t is Rm, the empirical formula obtained based on the above data is:

[0066]

[0067] Deposit multiple sheets with a thickness of For such a TiN film within a certain range, when the interval time t from the film formation moment to the measurement moment is 1 hour, measure its sheet resistance as R1 (i.e., the measured value of the initial sheet resistance), then at another interval time t, measure the sheet resistance of the film as R2, and then calculate the theoretical value R0 of the initial sheet resistance = g(t, R2). In this embodiment, the error |R0 - R1| / R1 between the measured value of the initial sheet resistance and the theoretical value of the initial sheet resistance is < 1%.

[0068] Next, a system, device, and computer-readable storage medium for measuring the initial sheet resistance of a thin film during film formation provided by an embodiment of the present application will be introduced. The system, device, and computer-readable storage medium for measuring the initial sheet resistance of a thin film during film formation described below can be correspondingly referred to with the method for measuring the initial sheet resistance of a thin film described above.

[0069] Please refer to Figure 4 , Figure 4 which is a structural block diagram of a system for measuring the initial sheet resistance of a thin film during film formation provided by an embodiment of the present application. The system may include:

[0070] A theoretical relationship establishment module 100, configured to establish a theoretical relationship among the initial sheet resistance of the thin film, the interval time from the film formation moment to the measurement moment, and the measured value of the sheet resistance at the measurement moment;

[0071] A data acquisition module 200, configured to acquire the interval time from the film formation moment of the thin film to be measured to a preset measurement moment and the measured value of the sheet resistance at the preset measurement moment;

[0072] A theoretical initial sheet resistance calculation module 300, configured to determine the theoretical initial sheet resistance value of the thin film to be measured according to the interval time from the film formation moment to the preset measurement moment, the measured value of the sheet resistance at the preset measurement moment, and the theoretical relationship.

[0073] Based on the above embodiment, the present application has established a theoretical relationship among the initial sheet resistance of the thin film, the interval time from the film formation moment to the measurement moment, and the measured value of the sheet resistance at the measurement moment. Based on this theoretical relationship, by acquiring the measured value of the sheet resistance after film formation and the corresponding interval time from the film formation moment to the measurement moment, the initial sheet resistance can be obtained. Therefore, the influence of the measurement time on the measurement result of the thin film sheet resistance can be reduced, and thus the process quality of the device can be better monitored.

[0074] Based on the above embodiment, the theoretical relationship establishment module 100 may include:

[0075] A sample data acquisition unit, configured to acquire the measured values of the sheet resistance of thin film samples with different thicknesses at different measurement moments after film formation and the interval time from the film formation moment to the measurement moment corresponding to the measured values of the sheet resistance, under the condition that the atmospheric environment parameters and other thin film characteristic parameters except thickness remain unchanged;

[0076] A theoretical relationship establishing unit is configured to establish a theoretical relationship among the initial sheet resistance of the thin film, the time interval from the film formation time to the measurement time, and the measured value of the sheet resistance at the measurement time according to the measured values of the sheet resistance at each measurement time and the time interval from the film formation time corresponding to the measured value of the sheet resistance to the measurement time.

[0077] Based on the above embodiments, the sample data acquisition unit is specifically configured to:

[0078] Obtain the measured values of the sheet resistance of thin film samples with different thicknesses at different measurement times after the film formation time and the time interval from the film formation time corresponding to the measured value of the sheet resistance to the measurement time under the condition that the atmospheric environment parameters and other thin film characteristic parameters except the thickness remain unchanged; the time interval is greater than 10 minutes.

[0079] Based on the above embodiments, the theoretical relationship in the theoretical relationship establishing unit can be expressed as:

[0080] Rm = f(t, R0) = a×ln(t)+(b×R0 + c)×t + d×R0 + e;

[0081] Wherein, R0 represents the initial sheet resistance; Rm represents the measured value of the sheet resistance at the measurement time; t represents the time interval from the measurement time to the film formation time; a represents a first function related to the atmospheric environment parameters and the thin film characteristic parameters; b represents a second function related to the atmospheric environment parameters and the thin film characteristic parameters; c represents a third function related to the atmospheric environment parameters and the thin film characteristic parameters; d represents a fourth function related to the atmospheric environment parameters and the thin film characteristic parameters; e represents a fifth function related to the atmospheric environment parameters and the thin film characteristic parameters.

[0082] Based on the above embodiments, the data acquisition module 200 is specifically configured to obtain the time interval from the film formation time of the thin film to the preset measurement time and the measured value of the sheet resistance at the preset measurement time detected by the four-probe sheet resistance tester.

[0083] Based on the above embodiments, the present application further provides a device for measuring the initial sheet resistance of thin film formation, including: a memory and a processor, wherein the memory is used to store a computer program; the processor is used to implement the steps of the method for measuring the initial sheet resistance of thin film formation described in the above embodiments when executing the computer program. Of course, the device for measuring the initial sheet resistance of thin film formation may further include various necessary network interfaces, power supplies, and other components, etc.

[0084] The present application also provides a computer-readable storage medium, on which a computer program is stored. When the computer program is executed by a processor, the steps of the initial sheet resistance measurement method for thin film film formation described in the above embodiments are implemented. The storage medium may include: various media such as USB flash drives, mobile hard disks, read-only memories (ROM), random access memories (RAM), magnetic disks, or optical discs that can store program codes.

[0085] In this article, specific examples are used to elaborate on the principles and implementation manners of the present application, and the various embodiments have a progressive relationship. The key point of each embodiment is to illustrate the differences from other embodiments. For the same or similar parts among the various embodiments, reference can be made to each other. For the systems disclosed in the embodiments, reference can be made to the corresponding method part for description. The description of the above embodiments is only used to help understand the method and its core idea of the present application. For those of ordinary skill in the art in this technical field, without departing from the principle of the present application, several improvements and modifications can be made to the present application, and these improvements and modifications also fall within the protection scope of the claims of the present application.

[0086] It should also be noted that in this specification, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements not only includes those elements, but also includes other elements not explicitly listed, or further includes elements inherent to such process, method, article or device. Without further limitation, an element defined by the statement "including an..." does not exclude the existence of additional identical elements in the process, method, article or device including the element.

Claims

1. A method for measuring the initial sheet resistance of a thin film during film formation, characterized in that, it includes: establishing a theoretical relationship among the initial sheet resistance of the thin film, the time interval from the film formation time to the measurement time, and the measured value of the sheet resistance at the measurement time; obtaining the time interval from the film formation time to a preset measurement time and the measured value of the sheet resistance at the preset measurement time for the thin film to be measured; determining the theoretical initial sheet resistance value of the thin film to be measured according to the time interval from the film formation time to the preset measurement time, the measured value of the sheet resistance at the preset measurement time, and the theoretical relationship.

2. The method for measuring the initial sheet resistance of a thin film during film formation according to claim 1, characterized in that, the establishment of the theoretical relationship among the initial sheet resistance of the thin film, the time interval from the film formation time to the measurement time, and the measured value of the sheet resistance at the measurement time includes: obtaining the measured values of the sheet resistance of the thin film samples with different thicknesses at different measurement times after the film formation time and the time intervals from the film formation time to the measurement times corresponding to the measured values of the sheet resistance under the condition that the atmospheric environment parameters and other thin film characteristic parameters except the thickness remain unchanged; establishing a theoretical relationship among the initial sheet resistance of the thin film, the time interval from the film formation time to the measurement time, and the measured value of the sheet resistance at the measurement time according to the measured values of the sheet resistance at each measurement time and the time intervals from the film formation time to the measurement times corresponding to the measured values of the sheet resistance.

3. The method for measuring the initial sheet resistance of a thin film during film formation according to claim 2, characterized in that, the obtaining of the measured values of the sheet resistance of the thin film samples with different thicknesses at different measurement times after the film formation time and the time intervals from the film formation time to the measurement times corresponding to the measured values of the sheet resistance under the condition that the atmospheric environment parameters and other thin film characteristic parameters except the thickness remain unchanged includes: obtaining the measured values of the sheet resistance of the thin film samples with different thicknesses at different measurement times after the film formation time and the time intervals from the film formation time to the measurement times corresponding to the measured values of the sheet resistance under the condition that the atmospheric environment parameters and other thin film characteristic parameters except the thickness remain unchanged; the time interval is greater than 10 minutes.

4. The method for measuring the initial sheet resistance of a thin film during film formation according to claim 2, characterized in that, the theoretical relationship is: Rm = f(t, R0) = a×ln(t)+(b×R0 + c)×t + d×R0 + e; wherein, R0 represents the initial sheet resistance; Rm represents the measured value of the sheet resistance at the measurement time; t represents the time interval from the measurement time to the film formation time; a represents a first function related to the atmospheric environment parameters and the thin film characteristic parameters; b represents a second function related to the atmospheric environment parameters and the thin film characteristic parameters; c represents a third function related to the atmospheric environment parameters and the thin film characteristic parameters; d represents a fourth function related to the atmospheric environment parameters and the thin film characteristic parameters; e represents a fifth function related to the atmospheric environment parameters and the thin film characteristic parameters.

5. The method for measuring the initial sheet resistance of thin film film formation according to claim 1, wherein, the obtaining of the sheet resistance measurement value at the preset measurement time includes: obtaining the sheet resistance measurement value at the preset measurement time detected by a four-probe sheet resistance tester.

6. A system for measuring the initial sheet resistance of thin film film formation, wherein, it includes: a theoretical relationship establishment module, configured to establish a theoretical relationship among the initial sheet resistance of the thin film, the time interval from the film formation time to the measurement time, and the sheet resistance measurement value at the measurement time; a data acquisition module, configured to acquire the time interval from the film formation time to the preset measurement time and the sheet resistance measurement value at the preset measurement time of the thin film to be measured; a theoretical initial sheet resistance value calculation module, configured to determine the theoretical initial sheet resistance value of the thin film to be measured according to the time interval from the film formation time to the preset measurement time, the sheet resistance measurement value at the preset measurement time, and the theoretical relationship.

7. The system for measuring the initial sheet resistance of thin film film formation according to claim 6, wherein, the theoretical relationship establishment module includes: a sample data acquisition unit, configured to acquire the sheet resistance measurement values of thin film samples with different thicknesses at different measurement times after the film formation time, and the time interval from the film formation time to the measurement time corresponding to the sheet resistance measurement values, under the condition that the atmospheric environment parameters and other thin film characteristic parameters except the thickness remain unchanged; a theoretical relationship establishment unit, configured to establish a theoretical relationship among the initial sheet resistance of the thin film, the time interval from the film formation time to the measurement time, and the sheet resistance measurement value at the measurement time according to the sheet resistance measurement values at each measurement time and the time interval from the film formation time to the measurement time corresponding to the sheet resistance measurement values.

8. The system for measuring the initial sheet resistance of thin film film formation according to claim 7, wherein, the sample data acquisition unit is specifically configured to: acquire the sheet resistance measurement values of thin film samples with different thicknesses at different measurement times after the film formation time, and the time interval from the film formation time to the measurement time corresponding to the sheet resistance measurement values, under the condition that the atmospheric environment parameters and other thin film characteristic parameters except the thickness remain unchanged; the time interval is greater than 10 minutes.

9. A device for measuring the initial sheet resistance of thin film film formation, wherein, it includes: a memory, configured to store a computer program; a processor, configured to implement the steps of the method for measuring the initial sheet resistance of thin film film formation according to any one of claims 1 to 5 when executing the computer program.

10. A computer-readable storage medium, wherein: a computer program is stored on the computer-readable storage medium, and when the computer program is executed by a processor, the steps of the method for measuring the initial sheet resistance of thin film film formation according to any one of claims 1 to 5 are implemented.

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