Substrate processing apparatus and substrate processing method

Abstract

Disclosed is a substrate processing method, the method comprising: loading a substrate onto a support unit located in a processing space of a chamber such that a patterned surface of the substrate faces downward; and rotating the substrate loaded on the support unit, discharging an etchant for etching a thin film formed on the patterned surface to the patterned surface of the substrate, and discharging a heating fluid to a non-patterned surface of the substrate.

Description

Technical Field

[0001] The invention relates to a substrate processing device and a substrate processing method. Background Art

[0002] Generally speaking, in the manufacturing process of a flat panel display device or a semiconductor, various processes such as a photoresist coating process, a developing process, an etching process, and an ashing process are performed in the process of processing a glass substrate or a wafer.

[0003] Among them, the etching process or cleaning process is a process for removing unnecessary areas from a thin film formed on a substrate, and requires high selectivity to the thin film, high etching rate and etching uniformity. With the high integration of semiconductor devices, the requirements for etching selectivity and etching uniformity are higher.

[0004] However, in the existing etching process or cleaning process, the etching rate uniformity (E / R Uniformity) will be significantly reduced due to the temperature difference between the center and the edge of the substrate. In particular, when BHDIW (back high temperature purified water) is supplied to the back of the substrate and the processing liquid is discharged to the front of the substrate, when the temperature difference between the center and the outside of the substrate exceeds a certain degree, the etching rate uniformity (E / R Uniformity) will be further reduced. Summary of the invention

[0005] The present invention is directed to providing a substrate processing device and method capable of improving etching performance.

[0006] The present invention is also directed to providing a substrate processing apparatus and method for uniformly distributing an etching rate (ER).

[0007] The present invention is also directed to providing a substrate processing apparatus and method capable of compensating for a temperature drop that is a factor in a decrease in ER in each region on a substrate.

[0008] The purpose of the present invention is not limited thereto, and a person skilled in the art can clearly understand other purposes not mentioned from the following description.

[0009] An exemplary embodiment of the present invention provides a substrate processing method, comprising: loading a substrate onto a support unit located in a processing space of a chamber so that a patterned surface of the substrate faces downward; and rotating the substrate loaded onto the support unit, discharging an etchant for etching a thin film formed on the patterned surface onto the patterned surface of the substrate, and discharging a heating fluid onto a non-patterned surface of the substrate.

[0010] Further, the heating fluid may be discharged to a drop point offset from the center of the substrate so that the temperature of the edge region of the substrate is higher than the temperature of the central region of the substrate by a predetermined temperature, and the etchant may be discharged onto the center of the substrate.

[0011] Additionally, the drop points may be spaced apart from the edge of the substrate.

[0012] Furthermore, the heating fluid may be discharged onto the non-patterned face of the substrate at a predetermined temperature that is higher than the temperature of the etchant by a predetermined temperature.

[0013] Furthermore, the heating fluid may be discharged to a plurality of landing points offset from the center of the substrate, and the landing points may be disposed closer to the edge of the substrate than to the center of the substrate.

[0014] Furthermore, the plurality of landing points may include a first landing point and a second landing point, and the first landing point and the second landing point may be disposed symmetrically with respect to a center of the substrate.

[0015] Furthermore, after the substrate is loaded into the chamber, the substrate may be turned over by the turning unit and loaded onto the supporting unit.

[0016] Furthermore, before the substrate is loaded into the chamber and loaded onto the supporting unit, the substrate may be turned over by a turning unit located in a separate chamber.

[0017] In addition, the thin film may be a titanium nitride (TiN) thin film, the etchant may include hydrogen peroxide, and the heating unit may include high-temperature pure water.

[0018] Another exemplary embodiment of the present invention provides a substrate processing device, including: a chamber that provides a processing space; a support unit that is disposed in the processing space and is used to support and rotate a substrate, wherein a patterned surface of the substrate faces downward; an etchant supply unit that is used to discharge an etchant from a lower portion of the substrate supported on the support unit toward the patterned surface of the substrate; and a heating fluid supply unit that is used to discharge a heating fluid from an upper portion of the substrate supported on the support unit toward a non-patterned surface of the substrate.

[0019] Furthermore, the heating fluid supply unit may discharge the heating fluid to a drop point offset from the center of the substrate so that the temperature of the edge of the substrate is higher than the temperature of the center of the substrate by a predetermined temperature.

[0020] Furthermore, the heating fluid supply unit may discharge the heating fluid to a landing point that is closer to the edge of the substrate than to the center of the substrate.

[0021] In addition, the heating fluid supply unit may discharge the heating fluid heated to a predetermined temperature higher than the temperature of the etchant to the non-patterned face of the substrate.

[0022] Furthermore, the heating fluid supply unit includes a first nozzle and a second nozzle, and a landing point of the first nozzle and a landing point of the second nozzle may be arranged to be symmetrical with respect to a center of the substrate.

[0023] Furthermore, the etchant may include hydrogen peroxide, and the heating fluid may include high temperature purified water.

[0024] In addition, the substrate processing apparatus may further include a flipping unit for flipping the substrate so that the patterned surface of the substrate faces downward and the non-patterned surface of the substrate faces upward.

[0025] In addition, the support unit may include: a support plate having a diameter larger than the substrate; support pins which protrude from a top surface of the support plate and support the substrate; and chuck pins which are provided at an edge portion of the support plate and support a side portion of the substrate when the substrate is rotated.

[0026] Another exemplary embodiment of the present invention provides a substrate processing method, comprising: loading a substrate onto a support unit located in a processing space of a chamber so that a patterned surface of the substrate faces downward; and rotating the substrate loaded on the support unit, discharging an etchant for etching a thin film on the patterned surface of the substrate onto the patterned surface of the substrate, and discharging a heating fluid onto a non-patterned surface of the substrate, wherein the heating fluid is discharged to a landing point closer to an edge of the substrate than to a center of the substrate, the etchant is discharged to the center of the substrate, and the temperature of the heating fluid is higher than that of the etchant.

[0027] Furthermore, the heating fluid may be discharged to a plurality of drop points offset from the center of the substrate, the plurality of drop points may include a first drop point and a second drop point, and the first drop point and the second drop point may be arranged to be symmetrical with respect to the center of the substrate.

[0028] Furthermore, the substrate may be reversed by the reverse unit after being loaded into the chamber and onto the support unit, or may be reversed by the reverse unit located in a separate chamber before being loaded into the chamber and onto the support unit.

[0029] According to exemplary embodiments of the present invention, etching performance may be improved.

[0030] According to exemplary embodiments of the present invention, the distribution of the etching rate (ER) may be made uniform.

[0031] According to an exemplary embodiment of the present invention, a temperature drop that is a factor in the reduction of the etch rate (ER) of various regions on the substrate may be supplemented.

[0032] The effects of the present invention are not limited to the aforementioned effects, and those skilled in the art can clearly understand unmentioned effects from this specification and the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 is a top view schematically showing a substrate processing facility provided with a substrate processing apparatus according to an exemplary embodiment of the present invention.

[0034] Figure 2 yes Figure 1 A top view of a substrate processing device.

[0035] Figure 3 yes Figure 1 A cross-sectional view of a substrate processing apparatus.

[0036] Figure 4 It is shown Figure 2 and Figure 3 Schematic diagram of the flip unit shown.

[0037] Figure 5 and Figure 6 are a flowchart and a schematic diagram illustrating a process of processing a substrate according to an exemplary embodiment of the present invention.

[0038] Figure 7 is a schematic diagram showing a modified example of the present invention.

[0039] Figure 8 : is a graph showing the etching rate uniformity (E / R Uniformity) by reverse supply. DETAILED DESCRIPTION

[0040] Exemplary embodiments of the present invention will be described more fully below with reference to the accompanying drawings, in which exemplary embodiments of the present invention are shown. However, the present invention can be implemented in various ways and is not limited to the following exemplary embodiments. In the following description of the present invention, the specific description of the known functions and configurations incorporated herein is omitted to avoid making the subject matter of the present invention unclear. In addition, throughout the accompanying drawings, the same reference numerals are used for components with similar functions and actions.

[0041] Unless otherwise expressly stated, the word "comprising" should be understood to include the elements stated but not to exclude any other elements. It should be understood that "comprising" and "having" are intended to specify the existence of the features, numbers, operations, components and parts or their combinations described in the specification, and do not exclude the possibility of the pre-existence or addition of one or more other features, numbers, operations, components and parts or their combinations.

[0042] Singular expressions used herein include plural expressions unless they have clearly opposite meanings in the context. Therefore, the shapes, sizes, etc. of elements in the drawings may be exaggerated for clearer description.

[0043] The terms first, second, etc. are used to describe various components, but the components are not limited by these terms. These terms are only used to distinguish one component from another component. For example, without departing from the scope of the present invention, the first component can be named as the second component, and similarly, the second component can also be named as the first component.

[0044] It should be understood that when a component is referred to as being "coupled" or "connected" to another component, the component may be directly coupled or connected to the other component, but there may also be intermediate components. Conversely, when a component is "directly coupled" or "directly connected" to another component, it should be understood that there are no intermediate elements. Other expressions describing the relationship between components, such as "between ~ and ~", "just between ~ and ~" or "adjacent to ~" and "directly adjacent to ~", should be understood similarly.

[0045] Unless otherwise defined, all terms (including technical or scientific terms) used herein have the same meaning as those generally understood by those skilled in the art. Terms defined in general dictionaries should be interpreted as having meanings that match those in the context of the relevant field, and should not be interpreted as idealized or overly formalized meanings unless clearly defined in this application.

[0046] The above detailed description illustrates the present invention. In addition, the above content shows and describes exemplary embodiments of the present invention, and the present invention can be used in various other combinations, modifications and environments. That is, the above content can be modified or amended within the scope of the inventive concept disclosed in this specification, the scope equivalent to the invention and / or the scope of the skills or knowledge in the art. The above exemplary embodiments describe the best state of the technical spirit of the implementation of the present invention, and various changes required in the specific application field and use of the present invention are possible. Therefore, the above detailed description of the present invention is not intended to limit the present invention to the disclosed exemplary embodiments. In addition, the attached claims should be interpreted as also including other exemplary embodiments.

[0047] Figure 1 FIG. 1 is a top view schematically showing a substrate processing facility 1 according to the present invention.

[0048] refer to Figure 1, the substrate processing device 1 includes an indexing module 1000 and a process processing module 2000. The indexing module 1000 includes a loading port 1200 and a conveying frame 1400. The loading port 1200, the conveying frame 1400, and the process processing module 2000 are sequentially arranged in series. Hereinafter, the direction in which the loading port 1200, the conveying frame 1400, and the process processing module 2000 are arranged is referred to as a first direction 12. When viewed from above, a direction perpendicular to the first direction 12 is referred to as a second direction 14, and a direction perpendicular to a plane including the first direction 12 and the second direction 14 is referred to as a third direction 16.

[0049] The carrier 1300 is placed on the load port 1200 , and the substrate W is accommodated in the carrier. A plurality of load ports 1200 are provided, and the plurality of load ports 1200 are arranged in series along the second direction 14 . Figure 1 It is shown that four loading ports 1200 are provided. However, the number of loading ports 1200 may also be increased or decreased according to the process efficiency of the process treatment module 2000 and conditions such as the footprint. A groove (not shown) for supporting the edge of the substrate W is formed in the carrier 1300. The groove is provided in plurality along the third direction 16. The substrates W are positioned in the carrier 1300 so as to be spaced apart from each other along the third direction 16 while being stacked. As the carrier 1300, a front opening unified pod (FOUP) may be used.

[0050] The process treatment module 2000 includes a buffer unit 2200, a transfer chamber 2400, and a process chamber 2600. The longitudinal direction of the transfer chamber 2400 is parallel to the first direction 12. The process chamber 2600 is arranged on one side and the other side of the transfer chamber 2400 along the second direction 14. The process chamber 2600 located on one side of the transfer chamber 2400 and the process chamber 2600 located on the other side of the transfer chamber 2400 are arranged to be symmetrical to each other based on the transfer chamber 2400. Some of the process chambers 2600 are arranged along the longitudinal direction of the transfer chamber 2400. In addition, some of the process chambers 2600 are arranged to be stacked on each other. That is, the process chamber 2600 can be arranged in an A×B arrangement (A, B are natural numbers greater than or equal to 1) on one side of the transfer chamber 2400. Wherein, A is the number of process chambers 2600 arranged in series in the first direction 12, and B is the number of process chambers 2600 arranged in series in the third direction 16. When 4 or 6 process chambers 2600 are arranged on one side of the transfer chamber 2400, the process chambers 2600 may be arranged in a 2×2 or 3×2 arrangement. The number of process chambers 2600 may be increased or decreased. Contrary to the aforementioned situation, the process chamber 2600 may be arranged only on one side of the transfer chamber 2400. In addition, contrary to the aforementioned situation, the process chamber 2600 may be arranged in a single layer on only one side or both sides of the transfer chamber 2400.

[0051] The buffer unit 2200 is disposed between the transfer frame 1400 and the transfer chamber 2400. The buffer unit 2200 provides a space for the substrate W to stay before being transferred between the transfer chamber 2400 and the transfer frame 1400. The buffer unit 2200 is provided with a groove (not shown) on which the substrate W is placed, and the groove (not shown) is provided in plurality to be spaced apart from each other in the third direction 16. In the buffer unit 2200, a surface facing the transfer frame 1400 and a surface facing the transfer chamber 2400 are open.

[0052] The transfer frame 1400 transfers the substrate W between the carrier 1300 located on the loading port 1200 and the buffer unit 2200. An indexing track 1420 and an indexing robot 1440 are provided in the transfer frame 1400. The longitudinal direction of the indexing track 1420 is provided to be parallel to the second direction 14. The indexing robot 1440 is installed on the indexing track 1420 and moves linearly in the second direction 14 along the indexing track 1420. The indexing robot 1440 includes a base 1441, a main body 1442, and an indexing arm 1443. The base 1441 is installed to be movable along the indexing track 1420. The main body 1442 is coupled to the base 1441. The main body 1442 is provided to be movable on the base 1441 in the third direction 16. In addition, the main body 1442 is provided to be rotatable on the base 1441. The indexing arm 1443 is connected to the main body 1442 and is arranged to be movable forward and backward relative to the main body 1442. A plurality of indexing arms 1443 are arranged to be driven individually. The indexing arms 1443 are arranged to be spaced apart from each other in the third direction 16 while being stacked. Some of the indexing arms 1443 may be used when the substrate W is transferred from the process treatment module 2000 to the carrier 1300, while other indexing arms 1443 may be used when the substrate W is transferred from the carrier 1300 to the process treatment module 2000. This can prevent particles generated from the substrate W before the process treatment from being attached to the substrate W after the process treatment during the process of loading and unloading the substrate W by the indexing robot 1440.

[0053] The transfer chamber 2400 transfers the substrate W between the buffer unit 2200 and the process chamber 2600 and between the process chambers 2600. The transfer chamber 2400 is provided with a guide rail 2420 and a main robot 2440. The guide rail 2420 is provided so that its longitudinal direction is parallel to the first direction 12. The main robot 2440 is installed on the guide rail 2420 and can move linearly along the first direction 12 on the guide rail 2420. The main robot 2440 includes a base 2441, a main body 2442, and a main arm 2443. The base 2441 is installed so as to be movable along the guide rail 2420. The main body 2442 is coupled to the base 2441. The main body 2442 is provided so as to be movable along the third direction 16 on the base 2441. In addition, the main body 2442 is provided so as to be rotatable on the base 2441. The main arm 2443 is coupled to the main body 2442 and is provided so as to be movable forward and backward relative to the main body 2442. The plurality of main arms 2443 are configured to be driven individually. The main arms 2443 are arranged to be stacked while being spaced apart from each other in the third direction 16. The main arm 2443 used when the substrate W is transferred from the buffer unit 2200 to the process chamber 2600 may be different from the main arm 2443 used when the substrate W is transferred from the process chamber 2600 to the buffer unit 2200.

[0054] A substrate processing device 10 for performing a cleaning process on a substrate W is provided in the process chamber 2600. The substrate processing device 10 provided in each process chamber 2600 may have different structures according to the type of cleaning process performed. Alternatively, the substrate processing device 10 provided in each process chamber 2600 may have the same structure. Alternatively, the process chamber 2600 may be divided into a plurality of groups, and the substrate processing devices 10 provided in the process chambers 2600 included in the same group may have the same structure, and the substrate processing devices 10 provided in the process chambers 2600 included in different groups may have different structures. For example, when the process chambers 2600 are divided into two groups, the process chambers 2600 of the first group may be provided on one side of the transfer chamber 2400, and the process chambers 2600 of the second group may be provided on the other side of the transfer chamber 2400. Alternatively, the process chambers 2600 of the first group may be disposed at a lower layer and the process chambers 2600 of the second group may be disposed at an upper layer at either one side or the other side of the transfer chamber 2400. The process chambers 2600 of the first group and the process chambers 2600 of the second group may be classified according to the type of chemicals used or the type of cleaning method.

[0055] In the following exemplary embodiments, an apparatus for performing liquid treatment on a substrate W using a treatment solution such as high-temperature sulfuric acid, high-temperature phosphoric acid, an alkaline chemical solution, an acidic chemical solution, a rinse solution, and a dry gas will be described as an example. However, the technical spirit of the present invention is not limited thereto, and can be applied to various types of apparatuses that perform a process, such as an etching process, while rotating the substrate W.

[0056] Figure 2 for Figure 1 A top view of a substrate processing device, Figure 3 for Figure 1 A cross-sectional view of a substrate processing apparatus. Figure 2 In FIG. , the flip unit is shown by a dotted line.

[0057] refer to Figure 2 and Figure 3 The substrate processing apparatus 10 may include a chamber 100 , a bowl 200 , a support unit 300 , a processing liquid supply unit 330 , a heating fluid supply unit 410 , an exhaust unit 500 , a lifting unit 600 , a flip unit 700 , and a controller 800 .

[0058] The chamber 100 provides a sealed inner space. An airflow supply member 110 is installed at an upper portion of the chamber 100. The airflow supply member 110 forms a downward airflow in the chamber 100.

[0059] The airflow supply part 110 filters high-humidity external air and supplies the filtered external air into the chamber 100. The high-humidity external air passes through the airflow supply part 110 and is supplied into the chamber 100 to form a downflow. The downflow provides a uniform airflow to the upper portion of the substrate W, and discharges pollutants generated in the process of treating the surface of the substrate W with the treatment liquid together with the air to the exhaust unit 500 through the recovery containers 210, 220, and 230 of the bowl 200.

[0060] The chamber 100 is divided into a process area 120 and a maintenance and repair area 130 by a horizontal partition wall 102. A bowl 200 and a support unit 300 are provided in the process area 120. In the maintenance and repair area 130, in addition to recovery lines 241, 243, 245 and an exhaust line 510 connected to the bowl 200, a driving unit of a lifting unit 600, a driving unit connected to a treatment liquid supply unit 410, supply lines, etc. are also provided. The maintenance and repair area 130 is isolated from the process area 120.

[0061] The bowl 200 has a cylindrical shape with an open upper portion, and has a processing space for processing a substrate W. The open upper surface of the bowl 200 is provided as a loading and unloading passage of the substrate W. The support unit 300 is located in the processing space. The support unit 300 rotates the substrate W in a state of supporting the substrate W during a process.

[0062] The bowl 200 is provided with a lower space connected to the exhaust pipe 290 at the lower end for forced exhaust. The first to third recovery containers 210, 220, 230 for introducing and sucking the process liquid and gas dispersed on the rotating substrate W are arranged in the bowl 200 in multiple stages.

[0063] The first to third recycling containers 210, 220, 230 in annular shape have an exhaust port H communicated with a common annular space. Specifically, each of the first to third recycling container cylinders 210, 220, 230 includes a bottom surface having an annular shape and a side wall extending from the bottom surface and having a cylindrical shape. The second recycling container 220 surrounds the first recycling container 210 and is spaced apart from the first recycling container 210. The third recycling container 230 surrounds the second recycling container 220 and is spaced apart from the second recycling container 220.

[0064] The first to third recovery containers 210, 220, and 230 provide first to third recovery spaces RS1, RS2, and RS3 into which the airflow containing the process liquid and the smoke dispersed from the substrate W flows. The first recovery space RS1 is defined by the first recovery container 210, the second recovery space RS2 is defined by the interval space between the first recovery container 210 and the second recovery container 220, and the third recovery space RS3 is defined by the interval space between the second recovery container 220 and the third recovery container 230.

[0065] The central portion of each of the upper surfaces of the first to third recovery containers 210, 220, and 230 is open. The first to third recovery containers 210, 220, and 230 are formed by inclined surfaces, and the distances from the inclined surfaces to the corresponding bottom surfaces gradually increase from the connected side walls toward the open portions. The processing liquid dispersed from the substrate W flows into the recovery spaces RS1, RS2, and RS3 along the upper surfaces of the first to third recovery containers 210, 220, and 230.

[0066] The first treatment liquid introduced into the first recovery space RS1 is discharged to the outside through the first recovery line 241. The second treatment liquid introduced into the second recovery space RS2 is discharged to the outside through the second recovery line 243. The third treatment liquid introduced into the third recovery space RS3 is discharged to the outside through the third recovery line 245.

[0067] The exhaust unit 500 can exhaust the inside of the bowl 200. For example, the exhaust unit 500 is used to provide exhaust pressure (suction pressure) to the recovery container for recovering the process liquid among the first to third recovery containers 210, 220 and 230 during the process. The exhaust unit 500 includes an exhaust line 510 connected to the exhaust pipe 290 and an airlock 520. The exhaust line 510 receives exhaust pressure from an exhaust pump (not shown) and is connected to a main exhaust line embedded in the bottom space of the semiconductor production line.

[0068] At the same time, the bowl 200 is connected to the lifting unit 600, and the lifting unit 600 changes the vertical position of the bowl 200. The lifting unit 600 linearly moves the bowl 200 in the vertical direction. According to the vertical movement of the bowl 200, the relative height of the bowl 200 relative to the support unit 300 changes.

[0069] The lifting unit 600 includes a bracket 612, a moving shaft 614, and a driver 616. The bracket 612 is fixedly installed on the outer wall of the processing container 100. The moving shaft 614, which is moved in a vertical direction by the driver 616, is fixedly coupled to the bracket 612. When the substrate W is transferred to or unloaded from the support unit 300, the bowl 200 descends so that the support unit 300 protrudes above the bowl 200. In addition, the height of the bowl 200 is adjusted so that the processing liquid can be introduced into the predetermined recovery containers 210, 220, and 230 according to the type of processing liquid supplied to the substrate W during the process. The bowl 200 may have different types of processing liquids and polluted gases recovered for each recovery space RS1, RS2, and RS3.

[0070] The flip unit 700 is a device for flipping the substrate. Flipping here means rotating the substrate W by 180° so that the front side (patterned side) of the substrate facing upward becomes facing downward, or rotating the substrate by 180° so that the front side facing downward becomes facing upward. Here, the front side of the substrate is called the patterned side, and the back side of the substrate is called the non-patterned side.

[0071] Figure 4 It is shown Figure 2 and Figure 3 Schematic diagram of the flip unit shown.

[0072] refer to Figure 4 The flip unit 700 may include a vertical frame 701, a flip part 702, and a transfer part 703. The vertical frame 701 is formed to be elongated in the up-down direction for transferring the substrate in the up-down direction. The vertical frame 701 supports the flip part 702 and includes a transfer part 703.

[0073] The flip part 702 may include a base part 710, fixed arms 720a and 720b, a rotating part 740 and a supporting part 750. The base part 710 has a ring shape for placing a substrate. Preferably, the base part 710 is formed to be slightly larger than the diameter of the substrate. The base part 710 is connected to the extension part 730 and fixed to the rotating part 740. The fixed arms 720a and 720b fix the substrate placed on the base part 710. The fixed arms 720a and 720b are divided into two parts to clamp or release the substrate. The far ends of the fixed arms 720a and 720b are provided with a clamping part for clamping the substrate. The fixed arms 720a, 720b and the base part 710 are connected to the rotating part 740. The rotating part 740 is used to flip the substrate and may include a rotating device that rotates the fixed arms 720a, 720b and the base part 710. The support part 750 is coupled to the rotating part 740 for supporting the substrate fixed by the fixing arms 720a, 720b and the base part 710, and is coupled to and supported on the frame 701 by the conveying part 703 formed on the frame 701. The conveying part 703 moves the flipping part 702 up and down. On the other hand, the conveying part 703 is formed on the frame 701, and can move the flipping part 702 in the up and down direction by using a pneumatic actuator, and for more precise control, the conveying part can move the flipping part 702 by using a motorized device.

[0074] Although in the present exemplary embodiment, it is shown that the flip unit is disposed in the substrate processing device 10, the present invention is not limited thereto, and the flip unit may be disposed in a separate flip chamber other than the chamber in which the etching process is performed. In this case, the substrate may be flipped in the separate flip chamber and then loaded into the substrate processing device.

[0075] Reference again Figure 2 and Figure 3 The support unit 300 supports the substrate W during the process and may rotate the substrate W during the process. The support unit 300 may include a support plate 310 and a rotation driving unit 320 .

[0076] The support plate 310 has a circular top surface. The support plate 310 is coupled to the rotation drive unit 320 for rotation. The support plate 310 includes support pins 318. The support pins 318 may be spaced apart at predetermined intervals on the edge of the top surface of the support plate 310. The support pins 318 support the lower surface of the substrate W so that the substrate W is supported while being spaced apart upward from the support plate 310. The chuck pins 316 are mounted on the edge of the support plate 310. The chuck pins 316 align the substrate W so that the substrate W supported by the plurality of support pins 318 is in its normal position. During processing, the chuck pins 316 contact the side portion of the substrate W to prevent the substrate W from being separated from the normal position. The rotation drive unit 320 has a hollow shape and is coupled to the support plate 310 so that the support plate 310 rotates.

[0077] The treatment liquid supply unit 330 is configured to spray the treatment liquid onto the thin film on the patterned surface of the substrate. The treatment liquid may be a high temperature chemical for etching the thin film on the surface of the substrate W.

[0078] In one example, the processing liquid supply unit 330 may include a nozzle body 332 and a back nozzle injection portion 334. The back nozzle injection portion 334 is located at the top center of the support plate 310. The back nozzle injection portion 334 discharges the etchant to the center of the patterned side of the substrate. In addition to the etchant, the back nozzle injection portion 334 can also spray a rinse solution (ultrapure water). The nozzle body 332 penetrates the hollow rotation drive unit 320 and is axially installed in the hollow rotation drive unit 320. Although not shown, a processing liquid supply line and a rinse liquid supply line may be provided inside the nozzle body 332. The back nozzle injection portion 334 is supplied with an etchant via an etchant supply portion 339. According to an exemplary embodiment, the thin film may be a titanium nitride (TiN) film, and the etchant may include hydrogen peroxide or a mixture of hydrogen peroxide and an alkaline solution.

[0079] The heating fluid supply unit 410 may supply the heating fluid to the non-patterned surface of the substrate W so that the temperature of the edge region of the substrate W is higher than the temperature of the central region of the substrate.

[0080] The heating fluid supply unit 410 may include a first nozzle 411, a nozzle arm 413, a support rod 415, and a nozzle driver 417. The first nozzle 411 is supplied with a heating fluid via a supply portion 420. The first nozzle 411 discharges the heating fluid onto a non-pattern surface of the substrate W. The nozzle arm 413 is an arm having a longer length in one direction, and the first nozzle 411 is installed at the front end of the nozzle arm 413. The nozzle arm 413 supports the first nozzle 411. The support rod 413 is installed at the rear end of the nozzle arm 415. The support rod 415 is located at the lower part of the nozzle arm 413. The support rod 415 is arranged to be perpendicular to the nozzle arm 413. The nozzle driver 417 is arranged at the lower end of the support rod 415. The nozzle driver 417 rotates the support rod 415 around the longitudinal axis of the support rod 415. As the support rod 415 rotates, the nozzle arm 413 and the first nozzle 411 swing relative to the support rod 415 as an axis. The first nozzle 411 may swing between the outside and the inside of the bowl 200 .

[0081] The first nozzle 411 may discharge the heating fluid to a landing point P closer to the edge of the substrate W than to the center C of the substrate W (refer to Figure 6). For example, when the substrate is a 300 mm wafer, the drop point P can be set within a range of 15 to 75 mm from the edge. The heating fluid can be discharged onto the non-patterned surface of the substrate at a higher temperature than the etchant. For example, in order to maintain the same E / R value at different locations on the substrate, it is desired that the temperature at the edge of the substrate is 1.7 to 3.7°C higher than the temperature at the center of the substrate. For this purpose, when the temperature of the etchant discharged onto the patterned surface of the substrate is 50°C, the temperature of the heating fluid discharged onto the non-patterned surface of the substrate can be 50+α°C.

[0082] Although not shown, the chamber 100 may be provided with a rinsing liquid supply unit for supplying rinsing liquid to the substrate, and the rinsing liquid supply unit may be provided in substantially the same configuration as the heating fluid supply unit, which will not be described.

[0083] The controller 800 can control the substrate processing equipment. The controller 800 can control the components of the process chamber to process the substrate according to the set process as described above. In addition, the controller 800 may include a process controller formed by a microprocessor (computer) that performs control of the substrate processing equipment, a user interface for managing the substrate processing equipment formed by a keyboard through which an operator performs command input operations, etc., a display for visualizing and displaying the operation of the substrate processing equipment, and a storage unit in which a control program for performing the processing performed in the substrate processing equipment under the control of the process controller or various data and programs for performing processing on each configuration according to the processing conditions, i.e., a processing scheme, is stored. In addition, the user interface and the storage unit may be connected to the process controller. The processing scheme may be stored in a storage medium in the storage unit, and the storage medium may be a hard disk, or may be a portable disk, such as a CD-ROM or a DVD, or a semiconductor memory, such as a flash memory.

[0084] Figure 5 and Figure 6 1 is a flow chart and a schematic diagram showing a substrate processing process according to an exemplary embodiment of the present invention. Figure 5 and Figure 6 A substrate processing method according to an exemplary embodiment of the present invention is described.

[0085] Before performing the etching process on the substrate, a substrate flipping process may be performed. The substrate flipping process is a process of flipping the substrate that has been loaded into the chamber 100 and loading the flipped substrate onto the support unit 300. The substrate is loaded into the chamber 100 and transferred to the flipping unit 700 (refer to Figure 3), and the substrate is flipped 180 degrees by the flipping operation of the flipping unit 700. In this case, the patterned surface of the substrate faces downward. The flipped substrate is placed on the supporting unit 300. In another example, the substrate flipped in another substrate processing device can be loaded into the chamber.

[0086] When the substrate is placed on the support unit 300, a chemical solution treatment process can be implemented. In the chemical solution treatment process (etching process), in a state where the substrate is rotated, the back nozzle injection portion 334 of the treatment liquid supply unit 330 supplies the etchant to the patterned surface of the substrate, and the first nozzle 411 of the heating fluid supply unit 410 supplies hot ultrapure water as a heating fluid to the non-patterned surface of the substrate. The time for supplying the heating fluid can be earlier than the time for supplying the etchant or the same as the time for supplying the etchant. The etchant can be supplied at a high temperature (e.g., 50 degrees Celsius), and the etchant can be discharged toward the center of the patterned surface of the substrate.

[0087] The heating fluid (heated pure water) may be supplied at a temperature higher than that of the etchant. The heating fluid may be discharged to a drop point offset from the center of the substrate so that the temperature of the edge region of the substrate is higher than that of the center region of the substrate by a predetermined temperature. During the chemical solution treatment process, the support unit 300 may be rotated at a speed of 10 to 500 rpm.

[0088] After the etching process performed on the substrate is completed, a rinsing process may be performed. In the rinsing process, pure water may be supplied to the patterned surface of the substrate through the back nozzle spraying portion 334. In another example, the rinsing process may be performed by flipping the substrate through the flip unit 700 so that the patterned surface of the substrate faces upward, placing the flipped substrate on the support unit 300, and discharging pure water from the upper portion of the substrate.

[0089] Then, a drying process S400 may be performed on the substrate W. The drying process may be spin drying, supercritical drying, or the like.

[0090] After the drying process, the substrate may be reversed by the reversing unit 700 and unloaded from the chamber 100 .

[0091] Figure 7 is a schematic diagram showing a modified example of the present invention.

[0092] like Figure 7As shown, during the etching process on the substrate, the etchant can be discharged to a plurality of drop points offset from the center of the substrate. For example, the etchant can be discharged to a first drop point P1 and a second drop point P2 through a first nozzle 411a and a second nozzle 411b. The first drop point P1 and the second drop point P2 can be arranged symmetrically with respect to the center C of the substrate. For example, when there are more than three drop points, the drop points can be arranged to be equally spaced relative to the center of the substrate.

[0093] Figure 8 : is a graph showing the etching rate uniformity (E / R Uniformity) by reverse supply.

[0094] refer to Figure 8 The present invention places the substrate on the support unit in a flipped state through a flip unit, discharges high-temperature etchant from the bottom of the substrate toward the patterned surface, and discharges high-temperature pure water from the upper part of the substrate toward the landing point near the edge, thereby achieving temperature compensation at the edge of the substrate. Therefore, the temperature of the edge of the substrate is maintained at a predetermined temperature higher than the temperature of the center of the substrate, thereby improving the etching E / R distribution compared with previous improvements.

[0095] The above detailed description illustrates the present invention. In addition, the above content shows and describes exemplary embodiments of the present invention, and the present invention can be used in various other combinations, modifications and environments. That is, the above content can be modified or amended within the scope of the inventive concept disclosed in this specification, the scope equivalent to the invention and / or the scope of the skills or knowledge in the art. The above exemplary embodiments describe the best state of the technical spirit of the implementation of the present invention, and various changes required in the specific application field and use of the present invention are possible. Therefore, the above detailed description of the present invention is not intended to limit the present invention to the disclosed exemplary embodiments. In addition, the attached claims should be interpreted as also including other exemplary embodiments.

Claims

1. A substrate processing method, the method comprising: loading a substrate onto a support unit located in a processing space of the chamber such that a patterned surface of the substrate faces downward; as well as The substrate loaded on the supporting unit is rotated, an etchant for etching a thin film formed on the patterned surface is discharged onto the patterned surface of the substrate, and a heating fluid is discharged onto a non-patterned surface of the substrate.

2. The substrate processing method according to claim 1, wherein: The heating fluid is discharged to a drop point offset from the center of the substrate so that the temperature of the edge region of the substrate is higher than the temperature of the central region of the substrate by a predetermined temperature, and The etchant is discharged into the center of the substrate.

3. The substrate processing method according to claim 2, wherein: The landing point is spaced apart from an edge of the substrate.

4. The substrate processing method according to claim 2, wherein: The heating fluid is discharged onto the non-patterned face of the substrate at a predetermined temperature that is higher than a temperature of the etchant by a predetermined temperature.

5. The substrate processing method according to claim 2, wherein the heating fluid is discharged to a plurality of landing points offset from the center of the substrate, and The drop point is disposed closer to an edge of the substrate than to a center of the substrate.

6. The substrate processing method according to claim 5, wherein: The plurality of landing points include a first landing point and a second landing point, and The first landing point and the second landing point are arranged symmetrically with respect to the center of the substrate.

7. The substrate processing method according to claim 2, wherein: After the substrate is loaded into the chamber, the substrate is turned over by a turning unit and loaded onto the supporting unit.

8. The substrate processing method according to claim 2, wherein: Before the substrate is loaded into the chamber and loaded onto the supporting unit, the substrate is turned over by a turning unit located in a separate chamber.

9. The substrate processing method according to claim 2, wherein: The thin film is a titanium nitride (TiN) film, The etchant includes hydrogen peroxide, and The heating unit contains high temperature purified water.

10. A substrate processing device comprising: a chamber providing a processing space; a supporting unit disposed in the processing space and configured to support and rotate the substrate, wherein the patterned surface of the substrate faces downward; an etchant supply unit for discharging an etchant from a lower portion of the substrate supported on the support unit toward the patterned surface of the substrate; as well as A heating fluid supply unit is used to discharge a heating fluid from an upper portion of the substrate supported on the supporting unit toward a non-patterned surface of the substrate.

11. The substrate processing apparatus according to claim 10, wherein: The heating fluid supply unit discharges the heating fluid to a drop point offset from a center of the substrate so that a temperature of an edge of the substrate is higher than a temperature of the center of the substrate by a predetermined temperature.

12. The substrate processing apparatus according to claim 11, wherein: The heating fluid supply unit discharges the heating fluid to a landing point closer to the edge of the substrate than to the center of the substrate.

13. The substrate processing apparatus according to claim 11, wherein: The heating fluid supply unit discharges the heating fluid heated to a predetermined temperature higher than that of the etchant onto the non-patterned face of the substrate.

14. The substrate processing apparatus according to claim 11, wherein the heating fluid supply unit comprises a first nozzle and a second nozzle, and A landing point of the first nozzle and a landing point of the second nozzle are arranged to be symmetrical with respect to the center of the substrate.

15. The substrate processing apparatus according to claim 11, wherein the etchant contains hydrogen peroxide, and The heating fluid includes high-temperature pure water.

16. The substrate processing apparatus according to claim 11, further comprising: The flipping unit is used to flip the substrate so that the patterned surface of the substrate faces downward and the non-patterned surface of the substrate faces upward.

17. The substrate processing apparatus according to claim 11, wherein: The support unit comprises: a support plate having a diameter greater than that of the substrate; supporting pins protruding from a top surface of the supporting plate and supporting the substrate; and A chuck pin is provided at an edge portion of the support plate and supports a side portion of the substrate when the substrate is rotated.

18. A substrate processing method, comprising: loading a substrate onto a support unit located in a processing space of the chamber such that a patterned surface of the substrate faces downward; as well as rotating the substrate loaded on the supporting unit, discharging an etchant for etching a thin film on a patterned surface of the substrate onto the patterned surface of the substrate, and discharging a heating fluid onto a non-patterned surface of the substrate, The heating fluid is discharged to a drop point that is closer to the edge of the substrate than to the center of the substrate, the etchant is discharged to the center of the substrate, and the temperature of the heating fluid is higher than that of the etchant.

19. The substrate processing method according to claim 18, wherein the heating fluid is discharged to a plurality of landing points offset from the center of the substrate, and The plurality of landing points include a first landing point and a second landing point, and The first landing point and the second landing point are arranged symmetrically with respect to the center of the substrate.

20. The substrate processing method according to claim 19, wherein: The substrate is flipped by a flip unit after the substrate is loaded into the chamber and onto the support unit, or the substrate is flipped by a flip unit located in a separate chamber before the substrate is loaded into the chamber and onto the support unit.

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