Liquid wall device, chemical mechanical planarization equipment and chemical mechanical planarization method

Abstract

The invention relates to a liquid wall device, chemical mechanical planarization equipment and a method, the chemical mechanical planarization equipment comprises the liquid wall device, and the liquid wall device comprises a spray head which is arranged close to a panel of the chemical mechanical planarization equipment; the pipeline is communicated with the spray head and used for supplying cleaning liquid to the spray head, and the spray head extends from the pipeline to the panel; and the liquid blocking piece comprises a blocking shed arranged below the spray head, and the blocking shed extends from the position close to the panel to the middle of the chemical mechanical planarization equipment. According to the invention, the cleaning liquid is sprayed to the panel of the chemical mechanical planarization equipment through the nozzle, so that the Slurry can be prevented from forming crystals on the panel, and product defects caused by the crystals are avoided. And the cleaning liquid drops far away from the panel are blocked through the liquid blocking piece, so that the cleaning liquid drops are prevented from falling into a Slurry used in the grinding process, and the negative influence on the grinding effect is prevented.

Description

Technical Field

[0001] The present application relates to production equipment for semiconductor manufacturing, in particular to a liquid wall device, a chemical mechanical planarization equipment, and a chemical mechanical planarization method. Background Art

[0002] Chemical-Mechanical Planarization (CMP) is generally used to remove excess thin films on the wafer surface after thin film deposition.

[0003] See Figure 1 , after the CMP process, the monitoring station will perform defect scanning, and it is found that the number of defects on the wafer sometimes shows abnormal. Summary of the Invention

[0004] Based on this, it is necessary to provide a chemical mechanical planarization equipment that can reduce the number of defects after the CMP process.

[0005] A chemical mechanical planarization equipment includes a liquid wall device, and the liquid wall device includes: a nozzle, arranged close to the panel of the chemical mechanical planarization equipment; a pipeline, communicated with the nozzle, for supplying cleaning liquid to the nozzle, and the nozzle extends from the pipeline to the panel; a liquid blocking member, including a baffle arranged below the nozzle, and the baffle extends from a position close to the panel to the middle of the chemical mechanical planarization equipment.

[0006] In the above chemical mechanical planarization equipment, the cleaning liquid is sprayed onto the panel of the chemical mechanical planarization equipment through the nozzle, which can prevent the formation of crystals of Slurry (grinding liquid) on the panel, thereby avoiding product defects caused by the crystals. Compared with the method of removing the panel for cleaning, there is no need for additional cleaning time, so the production efficiency is higher. And the liquid blocking member blocks the cleaning liquid droplets far from the panel, preventing the cleaning liquid droplets from falling into the Slurry used in the grinding process and preventing negative impacts on the grinding effect.

[0007] In one embodiment, the liquid blocking member is used to block the cleaning liquid droplets far from the panel.

[0008] In one embodiment, the liquid blocking member further includes a baffle plate connected to the baffle, and the baffle plate extends upward from the baffle to the side of the nozzle, and the nozzle is located between the baffle plate and the panel close to the nozzle.

[0009] In one embodiment, the baffle further includes a bent portion extending downward from a side close to the panel.

[0010] In one embodiment, the cleaning liquid includes deionized water, the pipeline is communicated with the cleaning unit of the chemical mechanical planarization equipment, and the pipeline is configured to obtain deionized water through the cleaning unit.

[0011] In one embodiment, the nozzle aperture of the nozzle is less than 5 millimeters.

[0012] In one embodiment, the material of the nozzle includes soluble polytetrafluoroethylene.

[0013] In one embodiment, the material of the liquid blocking member is an antistatic acrylic sheet.

[0014] In one embodiment, a plurality of the nozzles are arranged at intervals on the pipeline, and each nozzle is configured such that the liquid curtain sprayed forms an intersection with the liquid curtain sprayed by an adjacent nozzle, and the height difference between the boundary of the intersection and the nozzle orifice is less than 10 centimeters.

[0015] In one embodiment, the nozzle is inclined obliquely downward in a direction close to the panel.

[0016] In one embodiment, the upper surface of the liquid blocking shed is inclined downward in a direction toward the panel.

[0017] In one embodiment, the pipeline and / or the nozzle are arranged near the top of the panel.

[0018] It is also necessary to provide a liquid wall device.

[0019] A liquid wall device is applied to a chemical mechanical planarization equipment. The liquid wall device includes: a nozzle arranged close to the panel of the chemical mechanical planarization equipment; a pipeline communicated with the nozzle for supplying cleaning liquid to the nozzle, and the nozzle extends from the pipeline toward the panel; a liquid blocking member including a liquid blocking shed arranged below the nozzle, and the liquid blocking shed extends from a position close to the panel toward the middle of the chemical mechanical planarization equipment.

[0020] In the above liquid wall device, the cleaning liquid is sprayed onto the panel of the chemical mechanical planarization equipment through the nozzle, which can prevent the formation of crystals of the Slurry on the panel, thereby avoiding product defects caused by the crystals. And by blocking the cleaning liquid droplets far from the panel through the liquid blocking member, it is possible to prevent the cleaning liquid droplets from falling into the Slurry used in the grinding process and prevent negative impacts on the grinding effect.

[0021] In one embodiment, the liquid blocking member is used to block the cleaning liquid droplets far from the panel.

[0022] In one embodiment, the liquid baffle further includes a baffle plate connected to the liquid baffle shed, the baffle plate extends upward from the liquid baffle shed to the side of the nozzle, and the nozzle is located between the baffle plate and the panel close to the nozzle.

[0023] In one embodiment, the liquid baffle shed further includes a bent portion extending downward from a side close to the panel.

[0024] In one embodiment, the cleaning liquid includes deionized water, the pipeline is communicated with a cleaning unit of the chemical mechanical planarization equipment, and the pipeline is configured to obtain deionized water through the cleaning unit.

[0025] In one embodiment, the nozzle aperture of the nozzle is less than 5 millimeters.

[0026] In one embodiment, the material of the nozzle includes soluble polytetrafluoroethylene.

[0027] In one embodiment, the material of the liquid baffle is an antistatic acrylic sheet.

[0028] In one embodiment, a plurality of nozzles are arranged at intervals on the pipeline, each nozzle is configured such that the liquid curtain sprayed forms an intersection with the liquid curtain sprayed by an adjacent nozzle, and the height difference between the boundary of the intersection and the nozzle aperture is less than 10 centimeters.

[0029] In one embodiment, the nozzle is inclined obliquely downward in a direction close to the panel.

[0030] In one embodiment, the upper surface of the liquid baffle shed is inclined downward in a direction toward the panel.

[0031] In one embodiment, the pipeline and / or the nozzle are arranged close to the top of the panel.

[0032] It is also necessary to provide a chemical mechanical planarization method.

[0033] A chemical mechanical planarization method uses the chemical mechanical planarization equipment described in any of the foregoing embodiments to planarize a wafer, and the nozzle sprays the cleaning liquid during the grinding of the wafer.

[0034] The above chemical mechanical planarization method enables the panel of the chemical mechanical planarization equipment to maintain an environment wetted by the cleaning liquid, which can prevent the formation of crystals of the Slurry on the panel, thereby avoiding product defects caused by the crystals. And by blocking the cleaning liquid droplets far from the panel with the liquid baffle, it is possible to prevent the cleaning liquid droplets from falling into the Slurry used during the grinding process and prevent negative impacts on the grinding effect.

[0035] In one embodiment, after the wafer grinding is completed, the nozzle continues to spray the cleaning liquid. Description of the Drawings

[0036] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0037] Figure 1 is a flowchart of an exemplary CMP process section;

[0038] Figure 2a is a schematic diagram of the formation of crystals on the panel of a CMP machine, Figure 2b is a schematic diagram of a defect Map where the crystals cause scratches on the wafer;

[0039] Figure 3 is a schematic structural diagram of a liquid wall device in an embodiment of the present application;

[0040] Figure 4 is a chemical mechanical planarization device including an exploded view of a liquid wall device in an embodiment of the present application;

[0041] Figure 5 is a schematic structural diagram of a chemical mechanical planarization device in an embodiment of the present application;

[0042] Figure 6 is a schematic diagram of a water curtain formed by a nozzle;

[0043] Figure 7 For the comparative example and the embodiments of the present application to conduct Figure 1 the defect data obtained from the defect scanning after CMP shown;

[0044] Figure 8 are the product yield data of the comparative example and the embodiments of the present application. Detailed Embodiments

[0045] To facilitate the understanding of the present application, the present application will be described more comprehensively below with reference to the relevant drawings. Embodiments of the present application are shown in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.

[0046] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terms used in the description of this application herein are for the purpose of describing specific embodiments only and are not intended to limit this application.

[0047] It should be understood that when an element or layer is referred to as being "on", "adjacent to", "connected to" or "coupled to" another element or layer, it can be directly on, adjacent to, connected or coupled to the other element or layer, or there may be intervening elements or layers. In contrast, when an element is referred to as being "directly on", "directly adjacent to", "directly connected to" or "directly coupled to" another element or layer, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, doping types and / or portions, these elements, components, regions, layers, doping types and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, doping type or portion from another element, component, region, layer, doping type or portion. Thus, without departing from the teachings of the present invention, the first element, component, region, layer, doping type or portion discussed below may be referred to as the second element, component, region, layer or portion; for example, the first doping type may be referred to as the second doping type, and similarly, the second doping type may be referred to as the first doping type; the first doping type and the second doping type are different doping types. For example, the first doping type may be P-type and the second doping type may be N-type, or the first doping type may be N-type and the second doping type may be P-type.

[0048] Spatial relationship terms such as "under", "below", "lower", "beneath", "above", "upper", etc. may be used herein to describe the relationship of one element or feature shown in the figures to other elements or features. It should be understood that in addition to the orientation shown in the figures, spatial relationship terms also include different orientations of the device in use and operation. For example, if the device in the figures is flipped, an element or feature described as "under" or "beneath" or "below" another element or feature will be oriented "on" the other element or feature. Thus, the exemplary terms "under" and "below" can include both an upper and a lower orientation. In addition, the device may also include additional orientations (such as rotating 90 degrees or other orientations), and the spatial descriptors used herein are to be interpreted accordingly.

[0049] As used herein, the singular forms "a", "an" and "the" may also include the plural forms unless the context clearly dictates otherwise. It should also be understood that the terms "comprises / comprising" or "has / including" etc. specify the presence of the stated features, integers, steps, operations, components, parts or combinations thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts or combinations thereof. At the same time, in this specification, the term "and / or" includes any and all combinations of the related listed items.

[0050] During the actual production process, crystals will appear on the panel of the CMP machine (i.e., the plate on the side of the machine), such as Figure 2a shown ( Figure 2a the black dot-filled area on the panel in it is the crystal). The inventor believes that these crystals are the key factors causing product defects, such as causing scratches on the surface of the wafer, as Figure 2b shown. The defects caused by this scratch are serious defects with high defect lethality.

[0051] Analysis of the reasons for crystal formation: The Slurry (grinding fluid) used in the CMP process is a mixture of abrasive materials and chemical additives. Exemplarily, Slurry mainly consists of components such as abrasives, surfactants, PH buffer gels, oxidants, and preservatives. Among them, abrasives generally include components such as silicon dioxide, aluminum oxide, cerium oxide, hydrogen peroxide, potassium hydroxide, manganese dioxide, iron nitrate, potassium iodate, and ammonia water. Since the Slurry solution is a suspension, tiny particles are suspended in water under the action of electrical repulsion. When affected by external factors (such as specific temperature, humidity, pH value, exposure to air, etc.), these particles are very easy to change their electrical properties and aggregate together, thus forming a large number of crystals.

[0052] Exemplarily, the panel of the CMP machine can be removed and cleaned to remove the crystals. However, this way of removing crystals is time-consuming and laborious, and the production efficiency is not high.

[0053] In this application, a liquid wall device is installed in the chemical mechanical planarization equipment. Through this liquid wall device, a cleaning liquid is continuously sprayed on the panel of the chemical mechanical planarization equipment to prevent Slurry from forming crystals on the panel.

[0054] Figure 3 is a schematic structural diagram of the liquid wall device in an embodiment of this application, Figure 4 is a chemical mechanical planarization equipment including an exploded view of the liquid wall device in an embodiment of this application, Figure 5It is a schematic structural diagram of a chemical mechanical planarization device in an embodiment of the present application. The chemical mechanical planarization device includes conventional polishing pads, polishing arms, liquid supply arms for supplying slurry, etc., which will not be elaborated here. The focus is on introducing the aforementioned liquid wall device. The liquid wall device includes a nozzle 1, a liquid blocking member 2, and a pipeline 3. The nozzle 1 is arranged close to the panel 4 of the chemical mechanical planarization device and is used to spray cleaning liquid onto the surface of the panel 4. Figure 3 The curve 5 in Figure 4 represents the cleaning liquid sprayed by the nozzle 1. In some embodiments of the present application, a plurality of nozzles 1 are distributed at intervals along the pipeline 3. In Figure 5 the illustrated embodiment, the chemical mechanical planarization device has 4 panels 4, and each panel 4 is correspondingly configured with a number of nozzles 1 with spray ports facing the panel 4 ( Figure 4 the nozzles 1 of the inner panel 4 are omitted). In other embodiments, no corresponding nozzles 1 may be provided for one or more than one panel 4. The pipeline 3 is connected to the nozzle and is used to supply cleaning liquid to the nozzle 1. The nozzle 1 extends from the pipeline 3 towards the panel 4 (towards the panel 4 closest to the nozzle 1).

[0055] In an embodiment of the present application, the cleaning liquid is deionized water. By spraying deionized water onto the panel 4 through the nozzle 1, the panel 4 is maintained in a wet environment with deionized water, which can prevent the formation of crystals of the slurry on the panel 4. The inventor found that spraying deionized water onto the panel 4 would have a negative impact on the polishing rate / quality of CMP. It is speculated that this problem is caused by the cleaning liquid droplets splashing into the slurry. Therefore, a liquid blocking member 2 is further provided. The liquid blocking member 2 includes a baffle 22 arranged below the nozzle 1, and the baffle 22 extends from a position close to the panel 4 towards the middle of the chemical mechanical planarization device. The liquid blocking member 2 is used to block the cleaning liquid droplets splashing away from the panel 4, so that the cleaning liquid droplets can drip downward from a position close to the panel 4 under the blocking of the liquid blocking member 2, and can avoid the cleaning liquid droplets from splashing onto the polishing pad located in the middle of the chemical mechanical planarization device as much as possible.

[0056] The above chemical mechanical planarization device sprays cleaning liquid onto the panel 4 of the chemical mechanical planarization device through the nozzle, which can prevent the formation of crystals of the slurry on the panel 4, thereby avoiding product defects caused by the crystals. Compared with the method of removing the panel 4 for cleaning, there is no need for additional cleaning time, so the production efficiency is higher. And by blocking the cleaning liquid droplets away from the panel 4 with the liquid blocking member 2, it is avoided that the cleaning liquid droplets fall into the slurry used in the polishing process, preventing a negative impact on the polishing effect.

[0057] In one embodiment of the present application, in order to guide the cleaning droplets splashed onto the upper surface of the baffle 22, the upper surface of the baffle 22 is slightly inclined downward in the direction toward the panel 4 (the panel 4 closest to the baffle 22), thereby avoiding the accumulation of cleaning droplets on the upper surface of the baffle 22.

[0058] In one embodiment of the present application, the liquid blocking member 2 further includes a baffle 24 connected to the baffle 22. The baffle 24 extends upward from the baffle 22 to the side of the nozzle 1, so that the nozzle 1 is located between the baffle 24 and the panel 4 close to the nozzle 1. The baffle 24 can enhance the blocking effect of scattered cleaning liquid droplets, and try to prevent the cleaning liquid droplets from splashing onto the polishing pad located in the middle of the chemical mechanical planarization device.

[0059] Reference Figure 3 In one embodiment of the present application, the baffle 22 further includes a bent portion extending downward from a side close to the panel 4. The bent portion can further enhance the blocking effect of scattered cleaning droplets, and try to prevent the cleaning droplets from splashing onto the polishing pad located in the middle of the chemical mechanical planarization device.

[0060] In one embodiment of the present application, the pipeline 3 adopts a structure in which a cleaning unit (CMPCleaner) of a chemical mechanical planarization device is internally connected, so that deionized water is obtained through the CMP Cleaner. The deionized water sprayed by the nozzle 1 can be recycled, that is, it flows back to the pipeline of the CMP Cleaner after spraying, and then transported to the nozzle 1 for spraying.

[0061] In one embodiment of the present application, the nozzle orifice diameter of the nozzle head 1 is less than 5 mm. In one embodiment of the present application, the material of the nozzle head 1 is PFA (soluble polytetrafluoroethylene).

[0062] In one embodiment of the present application, the material of the liquid blocking member 2 is an acrylic plate with antistatic material.

[0063] The position of the nozzle 1 should be set high enough to fully cover the position where crystals may form on the panel 4 with the cleaning liquid. In one embodiment of the present application, the position of the nozzle 1 is higher than the position of the grinding arm and the liquid supply arm. In one embodiment of the present application, the pipeline 3 and the nozzle 1 are set close to the top cover of the chemical mechanical planarization device, that is, close to the top of the panel 4.

[0064] exist Figure 4 and Figure 5 In the embodiment shown, a plurality of nozzles 1 are arranged at intervals on the pipe 3, and each nozzle 1 is configured to spray a water curtain that intersects with the water curtain sprayed by the adjacent nozzle. Figure 6 ( Figure 6Only the structure near the nozzle is shown), and the height difference H between the boundary at the intersection and the nozzle orifice of the nozzle is not greater than 10 cm to form a more complete coverage of cleaning liquid droplets on the panel 4.

[0065] In Figure 3 the illustrated embodiment, the nozzle 1 is inclined obliquely downward in the direction close to the panel 4. In other embodiments, the nozzle 1 may also be horizontally arranged or inclined upward.

[0066] In Figure 5 the illustrated embodiment, the pipe 3 is fixedly connected to the top cover of the chemical mechanical planarization equipment, that is, fixedly connected to the bottom surface of the top cover.

[0067] By installing the liquid wall device of the present application in the chemical mechanical planarization equipment, the crystallization of the CMP machine table panel is completely controlled, and the wafer defects and yield stability are improved, as Figure 7 and Figure 8 shown. Among them Figure 7 are the defect data obtained by defect scanning after CMP for the comparative example and the embodiment of the present application Figure 1 shown, Figure 8 are the product yield data of the comparative example and the embodiment of the present application, Figure 7 and Figure 8 and the abscissa in

[0068] is the wafer number. The present application correspondingly provides a chemical mechanical planarization method, which uses the chemical mechanical planarization equipment described in any of the foregoing embodiments to planarize the wafer, and sprays a cleaning liquid through the nozzle 1 during the wafer grinding process.

[0069] In an embodiment of the present application, after the wafer grinding is completed, the nozzle 1 still continues to spray the cleaning liquid. That is, whether during the wafer grinding process or when no grinding is performed, the spraying of the cleaning liquid is maintained. Through the liquid wall device, the panel 4 of the chemical mechanical planarization equipment is maintained in an environment wetted by deionized water, thereby preventing Slurry from forming crystals on the panel 4.

[0070] The present application correspondingly provides a liquid wall device.

[0071] A liquid wall device is applied to a chemical mechanical planarization equipment, and the liquid wall device includes: a nozzle, arranged close to the panel of the chemical mechanical planarization equipment; a pipe, communicated with the nozzle, used to supply a cleaning liquid to the nozzle, and the nozzle extends from the pipe to the panel; a liquid blocking member, including a baffle arranged below the nozzle, and the baffle extends from a position close to the panel to the middle of the chemical mechanical planarization equipment.

[0072] The above-mentioned liquid wall device sprays a cleaning liquid onto the panel of the chemical mechanical planarization equipment through a nozzle, which can prevent the formation of crystals of the slurry on the panel, thereby avoiding product defects caused by the crystals. Compared with the method of removing the panel for cleaning, there is no need for additional cleaning time, so the production efficiency is higher. And the liquid blocking member blocks the cleaning liquid droplets far from the panel, preventing the cleaning liquid droplets from falling into the slurry used in the grinding process and preventing negative impacts on the grinding effect.

[0073] In one embodiment, the liquid blocking member is used to block the cleaning liquid droplets far from the panel.

[0074] In one embodiment, the liquid blocking member further includes a baffle plate connected to the liquid blocking shed. The baffle plate extends upward from the liquid blocking shed to the side of the nozzle, and the nozzle is located between the baffle plate and the panel close to the nozzle.

[0075] In one embodiment, the liquid blocking shed further includes a bent portion extending downward from the side close to the panel.

[0076] In one embodiment, the cleaning liquid includes deionized water. The pipeline is communicated with the cleaning unit of the chemical mechanical planarization equipment, and the pipeline is configured to obtain deionized water through the cleaning unit.

[0077] In one embodiment, the nozzle aperture of the nozzle is below 5 mm.

[0078] In one embodiment, the material of the nozzle includes soluble polytetrafluoroethylene.

[0079] In one embodiment, the material of the liquid blocking member is an antistatic acrylic sheet.

[0080] In one embodiment, a plurality of nozzles are arranged at intervals on the pipeline. Each nozzle is configured such that the liquid curtain sprayed forms an intersection with the liquid curtain sprayed by an adjacent nozzle, and the height difference between the boundary of the intersection and the nozzle aperture is below 10 cm.

[0081] In one embodiment, the nozzle is inclined obliquely downward in the direction close to the panel.

[0082] In one embodiment, the upper surface of the liquid blocking shed is inclined downward in the direction towards the panel.

[0083] In one embodiment, the pipeline and / or the nozzle are arranged near the top of the panel.

[0084] It should be understood that although the steps in the flowchart of the present application are shown sequentially according to the arrows, these steps are not necessarily executed sequentially in the order indicated by the arrows. Unless there is a clear description in this article, there is no strict order restriction for the execution of these steps, and these steps can be executed in other orders. Moreover, at least a part of the steps in the flowchart of the present application may include multiple steps or multiple stages. These steps or stages are not necessarily executed at the same time, but can be executed at different times. The execution order of these steps or stages is not necessarily sequential, but can be executed alternately or in turn with at least a part of other steps or steps or stages in other steps.

[0085] In the description of this specification, the description with reference to terms such as "some embodiments", "other embodiments", "ideal embodiments", etc. means that the specific features, structures, materials or features described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic description of the above terms does not necessarily refer to the same embodiment or example.

[0086] The technical features of the above-described embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features of the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered to be within the scope described in this specification.

[0087] The above-described embodiments only represent several implementation manners of the present application, and their descriptions are relatively specific and detailed, but they should not be construed as limiting the scope of the patent application. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present application, several modifications and improvements can still be made, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application should be subject to the appended claims.

Claims

1. A chemical mechanical planarization device, It is characterized in that A liquid wall device is included, wherein the liquid wall device includes: A showerhead is disposed close to a panel of the chemical mechanical planarization device; a conduit in communication with the spray head for supplying cleaning fluid to the spray head, the spray head extending from the conduit toward the panel; The liquid blocking member comprises a blocking shed arranged below the nozzle, wherein the blocking shed extends from a position close to the panel toward the middle of the chemical mechanical planarization device.

2. The chemical mechanical planarization apparatus according to claim 1, It is characterized in that The liquid blocking member further comprises a baffle connected to the baffle shed, wherein the baffle extends upward from the baffle shed to the side of the spray head, and the spray head is located between the baffle and the panel close to the spray head.

3. The chemical mechanical planarization apparatus according to claim 1 or 2, It is characterized in that The barrier shed further includes a bent portion extending downward from a side close to the panel.

4. The chemical mechanical planarization apparatus according to claim 1, It is characterized in that The cleaning liquid includes deionized water, the pipeline is connected to the cleaning unit of the chemical mechanical planarization equipment, and the pipeline is configured to obtain deionized water through the cleaning unit.

5. The chemical mechanical planarization apparatus according to claim 1, It is characterized in that The nozzle aperture of the nozzle is less than 5 mm.

6. The chemical mechanical planarization apparatus according to claim 1, It is characterized in that The material of the nozzle includes soluble polytetrafluoroethylene; and / or The material of the liquid blocking piece is an acrylic plate of antistatic material.

7. The chemical mechanical planarization apparatus according to claim 1, It is characterized in that A plurality of the nozzles are arranged at intervals on the pipeline, and each nozzle is configured so that the liquid curtain sprayed by the nozzle intersects with the liquid curtain sprayed by the adjacent nozzle, and the height difference between the boundary of the intersection and the nozzle outlet is less than 10 cm.

8. A liquid wall device, It is characterized in that Applied in chemical mechanical planarization equipment, the liquid wall device comprises: A showerhead is disposed close to a panel of the chemical mechanical planarization device; a conduit in communication with the spray head for supplying cleaning fluid to the spray head, the spray head extending from the conduit toward the panel; The liquid blocking member comprises a blocking shed arranged below the nozzle, wherein the blocking shed extends from a position close to the panel toward the middle of the chemical mechanical planarization device.

9. A chemical mechanical planarization method, It is characterized in that The wafer is planarized using the chemical mechanical planarization equipment as described in any one of claims 1 to 8, and the cleaning liquid is sprayed by the nozzle during the wafer grinding process.

10. The chemical mechanical planarization method according to claim 9, It is characterized in that After the wafer grinding is completed, the nozzle continues to spray the cleaning liquid.

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