Light-emitting structure, preparation method thereof and display system

Abstract

The invention discloses a light-emitting structure, a preparation method thereof and a display system. The light emitting structure includes: a substrate; the plurality of light-emitting elements are arranged on the substrate; the light-emitting element comprises a first semiconductor layer, an active layer and a second semiconductor layer which are far away from the substrate in sequence; at least part of the surface, far away from the active layer, of at least one of the first semiconductor layer and the second semiconductor layer is an arc-shaped surface; the active layer comprises an effective light-emitting area, the effective light-emitting area is located on the concave side of the arc-shaped surface, and the orthographic projection area of the effective light-emitting area on the substrate is smaller than the orthographic projection area of the arc-shaped surface on the substrate. The light extraction rate of the light-emitting structure can be improved.

Description

Technical Field

[0001] The present invention relates to the field of display technologies, and particularly to a light-emitting structure, a preparation method thereof, and a display system. Background Art

[0002] Light-emitting structures, for example, Micro-LED (Micro Light Emitting Diode) structures have excellent characteristics such as self-luminescence, low power consumption, high integration, high stability, and all-weather operation. They have important applications in the field of modern display technologies, especially in fields such as AR (Augmented Reality) and VR (Virtual Reality) with great application prospects.

[0003] However, the light extraction efficiency of the light-emitting structures in related technologies is relatively low, which limits the further application of the light-emitting structures. Summary of the Invention

[0004] The present invention provides a light-emitting structure, a preparation method thereof, and a display system to improve the light extraction efficiency of the light-emitting structure.

[0005] According to an aspect of the present invention, there is provided a light-emitting structure, which includes:

[0006] A substrate;

[0007] A plurality of light-emitting elements disposed on the substrate; the light-emitting elements include a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially away from the substrate; at least a part of the surface of at least one of the first semiconductor layer and the second semiconductor layer away from the active layer is an arc surface; the active layer includes an effective light-emitting region, the effective light-emitting region is located on the concave side of the arc surface, and the orthographic projection area of the effective light-emitting region on the substrate is smaller than the orthographic projection area of the arc surface on the substrate.

[0008] Optionally, the included angle between the line connecting the center of the effective light-emitting region and the center of the arc surface and the line connecting the edge of the effective light-emitting region and the center of the arc surface is less than or equal to 5 degrees.

[0009] Optionally, the entire active layer is the effective light-emitting region; and / or,

[0010] The light-emitting element further includes a first electrode, the first electrode is located on the side of the second semiconductor layer away from the substrate, and the orthographic projection of the first electrode on the substrate coincides with the orthographic projection of the effective light-emitting region on the substrate.

[0011] Optionally, the light-emitting structure further includes an adhesive layer located between the substrate and the first semiconductor layer.

[0012] Optionally, the doping type of the first semiconductor layer is n-type, and the doping type of the second semiconductor layer is p-type.

[0013] Optionally, the light-emitting structure further includes a second electrode that covers the plurality of light-emitting elements and exposes the second semiconductor layer of the light-emitting elements.

[0014] Optionally, the surface of the second semiconductor layer away from the active layer includes the arc surface; the surface of the substrate away from the active layer is the light-emitting surface of the light-emitting structure.

[0015] Optionally, the doping type of the first semiconductor layer is p-type, and the doping type of the second semiconductor layer is n-type.

[0016] Optionally, the light-emitting element further includes a reflective layer located on a side of the arc surface away from the substrate, and the reflective layer covers the arc surface.

[0017] Optionally, the light-emitting structure further includes a Bragg reflection structure located between the first semiconductor layer and the substrate; and / or,

[0018] The light-emitting element further includes a tunneling junction, and a positive projection of the tunneling junction on the substrate coincides with a positive projection of the effective light-emitting region on the substrate;

[0019] The light-emitting structure further includes a transparent conductive layer located between the substrate and the light-emitting element, and the transparent conductive layer covers the tunneling junctions of the plurality of light-emitting elements.

[0020] Optionally, among the plurality of light-emitting elements, the closer a light-emitting element is to the light-emitting center of the light-emitting structure, the closer the positive projection of the corresponding effective light-emitting region on the substrate is to the light-emitting center on the substrate; and the farther a light-emitting element is from the light-emitting center of the light-emitting structure, the closer the positive projection of the corresponding effective light-emitting region on the substrate is to the edge corresponding to the light-emitting structure.

[0021] Optionally, the first semiconductor layers of different light-emitting elements are arranged at intervals.

[0022] Optionally, the light-emitting structure further includes a light-shielding layer that at least partially covers the light-emitting elements.

[0023] According to another aspect of the present invention, there is provided a method for manufacturing a light-emitting structure, including:

[0024] Providing a substrate;

[0025] A plurality of light-emitting elements are formed, wherein the light-emitting elements are disposed on the substrate; the light-emitting elements include a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially away from the substrate; at least a part of the surface of at least one of the first semiconductor layer and the second semiconductor layer away from the active layer is an arc surface; the active layer includes an effective light-emitting region, the effective light-emitting region is located on the concave side of the arc surface, and the orthographic projection area of the effective light-emitting region on the substrate is smaller than the orthographic projection area of the arc surface on the substrate.

[0026] Optionally, the surface of the first semiconductor layer away from the active layer includes the arc surface; the entire active layer is the effective light-emitting region;

[0027] The forming of the plurality of light-emitting elements includes:

[0028] Forming a first semiconductor epitaxial structure, an active structure, and a second semiconductor epitaxial structure that are sequentially away from the substrate on the substrate;

[0029] Forming a mask layer covering the second semiconductor epitaxial structure;

[0030] Using a target structured light as a light source, exposing the mask layer from the side of the substrate away from the active structure; wherein, the target structured light converges to the corresponding effective light-emitting region after passing through the arc surface;

[0031] Removing the unexposed mask layer;

[0032] Using the mask layer as a mask, etching the second semiconductor structure to form the second semiconductor layer, and etching the active structure to form the active layer.

[0033] Optionally, the surface of the first semiconductor layer away from the active layer includes the arc surface; the light-emitting structure further includes a first electrode, the first electrode is located on the side of the second semiconductor layer away from the substrate, and the orthographic projection of the first electrode on the substrate coincides with the orthographic projection of the effective light-emitting region on the substrate.

[0034] The forming of the plurality of light-emitting elements includes:

[0035] Forming a first semiconductor epitaxial structure, the active layer, and the second semiconductor layer that are sequentially away from the substrate on the substrate;

[0036] Forming a mask layer on the entire surface of the second semiconductor layer away from the substrate;

[0037] Using the target structured light as the light source, expose the mask layer from the side of the substrate away from the active layer; wherein, the target structured light converges to the corresponding effective light-emitting region after passing through the arc surface;

[0038] Remove the exposed mask layer;

[0039] Form the first electrode on the part of the mask layer where it has been removed.

[0040] Optionally, the surface of the second semiconductor layer away from the active layer includes the arc surface; the light-emitting structure further includes a reflective layer, the reflective layer is located on the side of the arc surface away from the substrate, and the reflective layer covers the arc surface; the light-emitting element further includes a tunneling junction, and the orthographic projection of the tunneling junction on the substrate coincides with the orthographic projection of the effective light-emitting region on the substrate;

[0041] The forming of the plurality of light-emitting elements includes:

[0042] Provide a first temporary substrate and a first semiconductor structure, an active structure, a second semiconductor structure, and the reflective layer that are successively away from the first temporary substrate;

[0043] Remove the first temporary substrate and form a tunneling junction layer on the surface of the first semiconductor structure;

[0044] Form a mask layer covering the tunneling junction layer;

[0045] Using the target structured light as the light source, expose the mask layer from the side of the tunneling junction layer away from the active structure; wherein, the target structured light converges to the corresponding effective light-emitting region after passing through the arc surface;

[0046] Remove the unexposed tunneling junction layer to form the tunneling junction.

[0047] Optionally, before using the target structured light as the light source to expose the tunneling junction layer from the side of the tunneling junction layer away from the active structure, it further includes:

[0048] Form a transparent substrate covering the tunneling junction layer; wherein, the transparent substrate has the same thickness and refractive index as the substrate.

[0049] According to another aspect of the present invention, a display system is provided, and the display system includes the light-emitting structure and an imaging device as described above;

[0050] The imaging device is arranged on the light-emitting surface of the light-emitting structure, and the arc surface is used to converge the emitted light of the light-emitting element to the imaging device.

[0051] The technical solution of the embodiment of the present invention adopts a light-emitting structure including a substrate and a plurality of light-emitting elements. The light-emitting elements are disposed on the substrate. The light-emitting element includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially away from the substrate; at least a part of the surface of at least one of the first semiconductor layer and the second semiconductor layer away from the active layer is an arc surface; the active layer includes an effective light-emitting region, the effective light-emitting region is located on the concave side of the arc surface, and the area of the orthographic projection of the effective light-emitting region on the substrate is smaller than the area of the orthographic projection of the arc surface on the substrate. By setting at least one semiconductor layer to include an arc surface and setting the size of the effective light-emitting region to be relatively small with respect to the arc surface, the arc surface can effectively converge the light emitted from the front or the back of the effective light-emitting region with respect to the light-emitting surface of the light-emitting structure, thereby reducing the light totally reflected back into the light-emitting element and improving the light extraction rate.

[0052] It should be understood that the content described in this part is not intended to identify the key or important features of the embodiments of the present invention, nor is it used to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0053] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0054] Figure 1 It is a schematic structural diagram of a light-emitting structure provided by an embodiment of the present invention;

[0055] Figure 2 is Figure 1 an enlarged schematic diagram of the light-emitting element in

[0056] Figure 3 It is an optical path diagram of a light-emitting structure provided by an embodiment of the present invention;

[0057] Figure 4 It is a schematic structural diagram of another light-emitting structure provided by an embodiment of the present invention;

[0058] Figure 5 It is a schematic structural diagram of another light-emitting structure provided by an embodiment of the present invention;

[0059] Figure 6 It is a schematic structural diagram of another light-emitting structure provided by an embodiment of the present invention;

[0060] Figure 7 It is an optical path diagram of another light-emitting structure provided by an embodiment of the present invention;

[0061] Figure 8 Schematic diagram of another light-emitting structure provided by an embodiment of the present invention;

[0062] Figure 9 Top view of a light-emitting structure provided by an embodiment of the present invention;

[0063] Figure 10 Schematic diagram of another light-emitting structure provided by an embodiment of the present invention;

[0064] Figure 11 Flow chart of a preparation method of a light-emitting structure provided by an embodiment of the present invention;

[0065] Figures 12 - 14 Schematic diagram of the product structure formed corresponding to the main steps of a preparation method of a light-emitting structure provided by an embodiment of the present invention;

[0066] Figures 15 - 17 Schematic diagram of the product structure formed corresponding to the main steps of another preparation method of a light-emitting structure provided by an embodiment of the present invention;

[0067] Figures 18 - 21 Schematic diagram of the product structure formed corresponding to the main steps of another preparation method of a light-emitting structure provided by an embodiment of the present invention. Detailed implementation manners

[0068] In order to enable those skilled in the art to better understand the solution of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0069] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged under appropriate circumstances so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device comprising a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0070] Figure 1 Schematic diagram of a light-emitting structure provided by an embodiment of the present invention,Figure 2 is Figure 1 an enlarged schematic diagram of the light-emitting element in, refer to Figure 1 and Figure 2 . The light-emitting structure includes a substrate 1 and a plurality of light-emitting elements 2; the light-emitting elements 2 are disposed on the substrate 1, and the light-emitting elements 2 include a first semiconductor layer 21, an active layer 22, and a second semiconductor layer 23 that are sequentially away from the substrate 1. At least a part of the surface of at least one of the first semiconductor layer 21 and the second semiconductor layer 23 away from the active layer 22 is an arc surface C1. The active layer 22 includes an effective light-emitting region 221, the effective light-emitting region 221 is located on the concave side of the arc surface C1, and the area of the positive projection of the effective light-emitting region 221 on the substrate 1 is smaller than the area of the positive projection of the arc surface C1 on the substrate 1.

[0071] Specifically, the light-emitting structure includes a plurality of light-emitting elements 2, and each light-emitting element 2 can emit light independently. The doping types of the first semiconductor layer 21 and the second semiconductor layer 22 in the light-emitting element 2 are different. If the first semiconductor layer 21 is n-type doped, then the second semiconductor layer 22 is p-type doped; similarly, if the first semiconductor layer 21 is p-type doped, then the second semiconductor layer 22 is n-type doped. When a forward voltage is applied across the p-type doped semiconductor layer and the n-type doped semiconductor layer, the p-type doped semiconductor layer generates holes, and the n-type doped semiconductor layer generates electrons. The electrons and holes recombine in the active layer, generating energy to cause the active layer 22 to emit light. Its specific light-emitting principle is well-known to those skilled in the art and will not be elaborated here. The first semiconductor layer 21 and the second semiconductor layer 23 can both be obtained by doping gallium nitride materials. In this embodiment, the first semiconductor layer 21, the active layer 22, and the second semiconductor layer 23 can be directly epitaxially grown on the substrate 1. Of course, they can also be grown on other substrates and finally transferred to the substrate 1 described in this embodiment.

[0072] Each light-emitting element 2 has an effective light-emitting region 221. The effective light-emitting region 221 is the region in the active layer 22 where effective light emission occurs, or the region where carriers are effectively recombined. Among them, the region of effective recombination can be understood as the region where more than 90% of the carrier recombination occurs. There is no carrier recombination in other regions of the active layer 22, or only very little carrier recombination occurs. That is to say, more than 90% of the light emitted by the light-emitting element 2 is emitted by the effective light-emitting region 221, and other parts of the active layer 22 do not emit light or emit very little light energy.

[0073] Each light-emitting element 2 has at least one arc surface C1, and the effective light-emitting area 221 is located on the concave side of the arc surface C1; and the orthographic projection area of the effective light-emitting area 221 on the substrate 1 is smaller than the orthographic projection area of the arc surface C1 on the substrate 1. That is to say, the effective light-emitting area 221 is located on one side of the center of the arc surface C1. And the effective light-emitting area 221 is relatively small in size with respect to the orthographic projection of the arc surface C1, and the arc surface C1 can converge more light of the effective light-emitting area 221. If the light-emitting surface of the light-emitting structure is located on the convex side of the arc surface C1, that is, the light emitted by the effective light-emitting area 221 can only be emitted to the outside of the light-emitting element 2 after passing through the arc surface C1, then in this case, on the one hand, the arc surface C1 can reduce total reflection, so that more light is transmitted to the outside of the light-emitting element 2, thereby improving the light extraction rate; on the other hand, it can converge the light emitted from the front of the effective light-emitting area 221, making the divergence angle of the light emitted from the front of the light-emitting element 2 smaller, and the light with a smaller divergence angle is more easily collected by the imaging device in the light field display technology. If the light-emitting surface of the light-emitting structure is located on the concave side of the arc surface C1, then after the light emitted from the back of the effective light-emitting area 221 reaches the arc surface C1, the divergence angle of the light reflected back into the light-emitting element 2 by the arc surface C1 is smaller, and then the divergence angle of the light reflected to the side of the light-emitting element 2 facing the light-emitting surface of the light-emitting structure is smaller, so that total reflection can be reduced, making more light pass through the outside of the light-emitting element 2, thereby improving the light extraction rate; at the same time, it can also make more light within the small divergence angle range, and the imaging device can receive more light, and the light energy utilization rate is also higher.

[0074] In the technical solution of this embodiment, the adopted light-emitting structure includes a substrate and a plurality of light-emitting elements. The light-emitting elements are arranged on the substrate. The light-emitting element includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially away from the substrate; at least part of the surface of at least one of the first semiconductor layer and the second semiconductor layer away from the active layer is an arc surface; the active layer includes an effective light-emitting area, the effective light-emitting area is located on the concave side of the arc surface, and the orthographic projection area of the effective light-emitting area on the substrate is smaller than the orthographic projection area of the arc surface on the substrate. By setting at least one semiconductor layer to include an arc surface and setting the size of the effective light-emitting area to be relatively small with respect to the arc surface, the arc surface can effectively converge the light emitted from the front or the back of the effective light-emitting area with respect to the light-emitting surface of the light-emitting structure, thereby reducing the light reflected back into the light-emitting element internally and improving the light extraction rate.

[0075] Optionally, the angle between the line connecting the center of the effective light-emitting region 221 and the center of the arc surface C1 and the line connecting the edge of the effective light-emitting region 221 and the center of the arc surface C1 is less than or equal to 5 degrees. In this embodiment, the arc surface C1 is, for example, a part of a spherical surface or an ellipsoidal surface, and the size of the orthographic projection corresponding to the effective light-emitting region 221 in any direction is much smaller than the size corresponding to the arc surface C1. Then, the effective light-emitting region 221 can be considered a point light source compared to the arc surface C1, and the arc surface C1 can effectively converge the light emitted from the effective light-emitting region 221.

[0076] Optionally, continuing to refer to Figure 1 , the surface of the first semiconductor layer 21 away from the active layer 22 includes an arc surface C1, and the surface of the substrate 1 away from the active layer 22 is the light-emitting surface of the light-emitting structure.

[0077] Specifically, in this embodiment, the arc surface C1 can improve the extraction rate of the light emitted from the front surface (i.e., the surface facing the light-emitting surface of the light-emitting structure) of the effective light-emitting region 221 relative to the light-emitting surface of the light-emitting structure. Specifically, as Figure 3 shown, Figure 3 is the optical path diagram of a light-emitting structure provided by an embodiment of the present invention. Among them, Figure 3 the left side in Figure 3 is the optical path diagram without the arc surface C1, and Figure 3 the right side in Figure 3 is the optical path diagram after the arc surface C1 is provided. The substrate 1 can be a sapphire substrate or the like. The refractive indices of the substrate 1 and the first semiconductor layer 21 are different. The refractive index of the first semiconductor layer 21 is greater than that of the substrate 1, and the refractive index of the substrate 1 is greater than that of air. Generally speaking, it can be considered that the refractive index of the first semiconductor layer 21 is 2.5 and the refractive index of the substrate 1 is 1.7. On the one hand, in In fact, the φ1 calculated by the above formula does not consider the refraction between the substrate 1 and the first semiconductor layer 21. The maximum divergence angle of the light emitted from the effective light-emitting region 221 that can be effectively received by the imaging device 5 is less than 6.7°. According to the solid spherical angle formula, the effective light-receiving efficiency of the imaging device 5 for this light-emitting element is: η1 = (1 - cos(6.7°)) = 0.68%.

[0078] For the structure on the right side in Figure 3 , due to the provision of the arc surface C1, the light emitted from the effective light-emitting region 221 converges towards the center of the effective light-emitting region 221 when passing through the arc surface C1. That is to say, less light that can undergo total reflection on the surface of the first semiconductor layer 21. Compared with the structure on the left side in Figure 3 , light with a larger divergence angle will undergo total reflection. Furthermore, it means that more light will be emitted from the light-emitting element 2 to the outside of the light-emitting element 2. Similarly, for the effective light-receiving of the imaging device 5, the following approximate calculation can be made (assuming there is an adhesive layer 3 between the substrate 1 and the first semiconductor layer 21, and the refractive index of the adhesive layer is 1.5): The maximum divergence angle of the light emitted from the effective light-emitting region 221 that can be received by the imaging device 5 is:

[0079]

[0080] The light-receiving efficiency η2 = (1 - cos(54°)) = 41%. That is to say, in this embodiment, by providing the arc surface C1, compared with not providing the arc surface C1, not only the light extraction rate is relatively high, but also the light energy utilization rate is increased by more than 60 times.

[0081] In addition, in this embodiment, the arc surface C1 is provided on the first semiconductor layer 21 instead of outside the first semiconductor layer 21. It can be directly laminated with the first semiconductor layer 21, and there are fewer materials with a refractive index close to it. That is to say, the refractive index of the material that can be directly in contact with the first semiconductor layer 21 differs greatly from the refractive index of the first semiconductor layer 21, and the divergence angle corresponding to total reflection is also smaller. In other words, it is more difficult to extract the light in the first semiconductor layer 21 to the outside. However, in this embodiment, the arc surface C1 is directly provided on the first semiconductor layer 21, which greatly reduces the difficulty of extracting the light from the first semiconductor layer 21 to the outside and improves the light extraction rate.

[0082] Optionally, Figure 4 is a schematic structural diagram of another light-emitting structure provided by an embodiment of the present invention. Refer to Figure 4 . In this embodiment, the entire active layer 22 is an effective light-emitting region.

[0083] Specifically, in this embodiment, the position and size of the active layer 22 are set to define the position and size of the effective light-emitting region. The size and position of the active layer 22 in each light-emitting element 2 are set such that the area of the orthographic projection of the active layer 22 on the substrate is smaller than the area of the orthographic projection of the arc-shaped surface C1 on the substrate 1. Thus, the entire active layer 22 becomes the effective light-emitting region 221. In this embodiment, the lateral dimension (the direction perpendicular to the thickness direction of the light-emitting structure) of the active layer 22 is smaller than the lateral dimension of the first semiconductor layer 21, which can be obtained by etching the active layer 22 after the first semiconductor layer 21 and the active layer 22 are grown. In some embodiments, the size of the second semiconductor layer 23 can be the same as that of the active layer 22, that is, the second semiconductor layer 23 and the first semiconductor layer 22 can be etched simultaneously. Figure 4 The structure shown in. The structure of this embodiment can ensure that the light-emitting part of the light-emitting element 2 is less, that is, all concentrated in the effective light-emitting region, and thus the light utilization rate can be greatly improved.

[0084] Optionally, Figure 5 is a schematic structural diagram of another light-emitting structure provided by an embodiment of the present invention. Refer to Figure 5 . In this embodiment, the light-emitting element 2 further includes a first electrode 25, and the first electrode 25 is located on the side of the second semiconductor layer 23 away from the substrate 1; the orthographic projection of the first electrode 25 on the substrate 1 coincides with the orthographic projection of the effective light-emitting region 221 on the substrate 1.

[0085] Specifically, in this embodiment, the position and size of the first electrode 25 are set to define the position and size of the effective light-emitting region 221. The position and size of the first electrode 25 are set such that the area of the orthographic projection of the first electrode 25 on the substrate is smaller than the area of the orthographic projection of the arc-shaped surface C1 on the substrate 1. More carriers are generated in the part of the second semiconductor layer 23 in contact with the first electrode 25, so that there are more carrier recombinations at the position of the active layer 22 corresponding to the first electrode 25, that is, this position is the effective light-emitting region. In this embodiment, the lateral dimensions of the active layer 22 and the second semiconductor layer 23 can be the same and larger than the lateral dimension of the first electrode 25. With such a setting, it is not necessary to separately etch the active layer 22 and the second semiconductor layer 23, and the manufacturing difficulty is relatively small.

[0086] Optionally, in this embodiment, the thickness of the first semiconductor layer 21 is greater than the thickness of the second semiconductor layer 23. With such a setting, it is easier to fabricate the arc-shaped surface C1 on the first semiconductor layer 21, and since the second semiconductor layer 23 is thinner, fewer carriers in the second semiconductor layer 23 diffuse outside the effective light-emitting region 221, so that most carriers recombine within the effective light-emitting region 221.

[0087] Optionally, in the above embodiments, the doping type of the first semiconductor layer 21 is n-type, and the doping type of the second semiconductor layer 23 is p-type.

[0088] Optionally, continuing to refer to Figure 4 and Figure 5 , in this embodiment, the light-emitting element 2 further includes an ohmic contact layer 24, and the ohmic contact layer 24 is located between the second semiconductor layer 23 and the first electrode 25 for making the first electrode 25 form an ohmic contact with the second semiconductor layer 23.

[0089] Optionally, continuing to refer to Figures 1 - 5 , the light-emitting structure further includes an adhesive layer 3, and the adhesive layer 3 is located between the substrate 1 and the first semiconductor layer 21.

[0090] Specifically, since the surface of the first semiconductor layer 21 close to the substrate 1 includes a curved surface C1, the first semiconductor layer 21 needs to first fabricate the curved surface C1 and then combine with the substrate 1. By providing the adhesive layer 3, the first semiconductor layer 21 is adhered to the substrate 1 to improve the overall mechanical stability of the light-emitting structure. It can be understood that the adhesive layer 3 is a transparent adhesive layer.

[0091] Optionally, continuing to refer to Figures 1 - 5 , the light-emitting structure further includes a second electrode 4, and the second electrode 4 covers a plurality of light-emitting elements 2 and exposes the second semiconductor layer 23 of the light-emitting elements 2.

[0092] Specifically, the second electrode 4 is in contact with the first semiconductor layer 21 of each light-emitting element 2 to provide a potential for the first semiconductor layer 21, so that there is a voltage between the first semiconductor layer 21 and the second semiconductor layer 23. The second electrode 4 can be understood as a common electrode of each light-emitting element 2. During use, the same potential is applied to the second electrodes 4 of each light-emitting element 2, and by controlling the potential applied to the first electrode 25 of the light-emitting element 2, the light-emitting brightness of the light-emitting element 2 is controlled. The second electrode 4 can be a mesh structure to reduce the resistance of the second electrode 4. In this embodiment, the surface of the second electrode 4 for contacting the array substrate can be flush with the surface of the first electrode 24, that is, a part of the second electrode 4 is disposed on the second semiconductor layer 23, so as to facilitate the pressing of the light-emitting structure and the array substrate. Among them, the array substrate may include a pixel driving circuit for driving the light-emitting element 2.

[0093] Optionally, Figure 6 is a schematic structural diagram of another light-emitting structure provided by an embodiment of the present invention. Refer to Figure 6 . In this embodiment, the surface of the second semiconductor layer 23 away from the substrate 1 includes a curved surface. The surface of the substrate 1 away from the active layer 22 is the light-emitting surface of the light-emitting structure.

[0094] Specifically, in this embodiment, the arc surface C1 can improve the extraction rate of the light emitted from the back surface of the effective light-emitting region 221 (i.e., the side away from the light-emitting surface of the light-emitting structure) with respect to the light-emitting surface of the light-emitting structure. Specifically, as Figure 7 shown, Figure 7 is the optical path diagram of another light-emitting structure provided by the embodiment of the present invention. Among them, Figure 7 on the left side is the optical path diagram corresponding to the light-emitting element when the arc surface C1 is not provided. Figure 7 on the right side is the optical path diagram corresponding to the light-emitting element when the arc surface C1 is provided. In Figure 7 the structure on the left side, when the light emitted from the back surface of the effective light-emitting region 221 reaches the side of the second semiconductor layer 23 away from the active layer, except for the light transmitted to the outside of the light-emitting element, the rest of the light is reflected back into the light-emitting element and finally reflected to the side of the first semiconductor layer 21 close to the light-emitting surface of the light-emitting structure. It can be considered as the light emitted from the virtual image 221' of the effective light-emitting region 221. The light emitted from this virtual image does not undergo total internal reflection on the side of the light-emitting element close to the light-emitting surface of the light-emitting structure, and the divergence angle of the light transmitted to the outside of the light-emitting element is small. For Figure 7 the structure on the right side, by providing the arc surface C1, the light emitted from the back surface of the effective light-emitting region 221 is converged after being reflected by the arc surface C1, that is, the light that needs to reach the side of the light-emitting element close to the substrate and be totally reflected has a larger divergence angle. In other words, more light emitted from the back surface of the effective light-emitting region 221 can be transmitted to the outside of the light-emitting element, thereby improving the light extraction rate. Similarly, when used in conjunction with the imaging device 5, by providing the arc surface C1, more light emitted from the back surface of the effective light-emitting region 221 can be effectively collected by the imaging device 5.

[0095] It should be noted that in some other embodiments, it may also be that both the first semiconductor layer 21 and the second semiconductor layer 22 include the arc surface C1, thereby further improving the light extraction rate of the light-emitting element and the effective utilization rate of light by the imaging device.

[0096] Optionally, continuing to refer to Figure 6 and Figure 7 , the light-emitting element 2 further includes a reflective layer 26. The reflective layer 26 is located on the side of the arc surface C1 away from the substrate 1, and the reflective layer 26 covers the arc surface C1.

[0097] Specifically, through the above analysis, it can be seen that although setting the arc surface C1 can improve the extraction rate of the light emitted from the back surface of the effective light-emitting region 221, there is still a part of the light emitted from the back surface of the light-emitting element 2, and this part of the light cannot be utilized by the imaging device. In this embodiment, by providing the reflective layer 26, the light emitted from the back surface of the effective light-emitting region 221 is reflected back to the front surface of the light-emitting element 2, thereby further improving the light extraction rate of the front surface of the light-emitting element 2, and thus can further improve the effective utilization rate of light by the imaging device.

[0098] Exemplarily, the reflective layer 26 can be a metallic material. A third electrode 27 is further provided on the side of the reflective layer 26 away from the substrate 1.

[0099] Optionally, in this embodiment, the second semiconductor layer 23 is n-type doped, and the first semiconductor layer 21 is p-type doped. The thickness of the n-type doped semiconductor layer is greater than the thickness of the p-type doped semiconductor layer. With this setting in this embodiment, it is easier to fabricate the arc surface C1 on the second semiconductor layer 23, that is, the preparation difficulty of the light-emitting element is relatively low.

[0100] Optionally, continue to refer to Figure 6 , the light-emitting element 2 further includes a tunneling junction 28, and the orthographic projection of the tunneling junction 28 on the substrate 1 coincides with the orthographic projection of the effective light-emitting region 221 on the substrate 1; the light-emitting structure further includes a transparent conductive layer 7, the transparent conductive layer 7 is located between the substrate 1 and the light-emitting element 2, and the transparent conductive layer 7 covers the tunneling junctions 28 of a plurality of light-emitting elements 2.

[0101] Specifically, in this embodiment, the position and size of the effective light-emitting region 221 are defined by the position and size of the tunneling junction 28. By providing the tunneling junction 28, the carriers in the first semiconductor layer 21 are mainly concentrated in the region corresponding to the tunneling junction 28, so that the position and size of the effective light-emitting region 221 correspond to those of the tunneling junction 28. The doping type of the tunneling junction 28 is different from that of the first semiconductor layer 21, and the ion doping concentration of the tunneling junction 28 is greater than the ion doping concentration of the second semiconductor layer 23. The tunneling junction 28 and the first semiconductor layer 21 can form a PN junction, thereby restricting the distribution of carriers in the first semiconductor layer 21.

[0102] The transparent electrode layer 7 can apply a potential to each tunneling junction 28 and does not block the light emission of the light-emitting element 2. The transparent electrode layer 7 can be indium tin oxide (ITO) for example.

[0103] Optionally, refer to Figure 6, the light-emitting structure further includes a fourth electrode 6, and the surface of the fourth electrode 6 away from the substrate 1 is flush with the surface of the third electrode 27 away from the substrate 1. After the light-emitting structure is bonded to the array substrate, the array substrate provides a potential for the fourth electrode 6, so that the tunneling junctions of different light-emitting elements 2 correspond to the same potential. The array substrate can apply different potentials to the third electrodes 27 of different light-emitting elements 2 as needed, so that there is a pressure difference between the two semiconductor layers of the light-emitting element 2, and the light-emitting element 2 generates light with a corresponding brightness according to the pressure difference. In the above embodiment, both the third electrode 27 and the fourth electrode 6 can be metals.

[0104] It should be noted that in this embodiment, the arc surface is located in the second semiconductor layer, the tunneling junction is arranged corresponding to the first semiconductor layer, and the first semiconductor layer is relatively thin, that is, the carriers diffusing outside the effective light-emitting region 221 can be reduced. In some other embodiments, the position and size of the effective light-emitting region can also be defined by controlling the size and position of the third electrode, or by restricting the position and size of the active layer.

[0105] Optionally, Figure 8 is a schematic structural diagram of another light-emitting structure provided by an embodiment of the present invention, refer to Figure 8 . The light-emitting structure further includes a Bragg reflection structure 8, and the Bragg reflection structure 8 is located between the first semiconductor layer 21 and the substrate 1.

[0106] Specifically, in this embodiment, the Bragg reflection structure 8 and the reflection layer 27 can form an optical cavity, and the Bragg reflection structure 8 can be set to have a high reflectivity and a certain transmittance for the light beam of the target wavelength. The light beam emitted by the effective light-emitting region 221 (hereinafter referred to as the seed light beam) can pass through the effective light-emitting region and be reflected back to the reflection layer 26 by the Bragg reflection structure 8 after being reflected by the reflection layer 26 once, and the light beam is reflected by the reflection layer and then passes through the effective light-emitting region again. The seed light beam is reflected multiple times by the reflection layer 26 and the Bragg reflection structure 8 in the optical cavity, and most of the reflections will pass through the effective light-emitting region, thereby increasing the opportunity of the light beam in the effective light-emitting region. At the same time, due to the small size of the effective light-emitting region, a large number of carriers are concentrated in the effective light-emitting region, so that the active layer material is in an excited state. The light beam passing through the effective light-emitting region multiple times will increase the contact opportunity between the light beam and the excitons. The seed light beam can excite more light beams with the same wave vector in the effective light-emitting region. These light beams with the same wave vector have a large consistency in emission angle, that is, within a small angle range, a high-density light distribution can be formed. Therefore, the setting of this embodiment can convert most of the electric energy into the light energy within a small angle range, achieving a high light intensity density distribution within a small angle range, and further improving the effective utilization rate of light in the imaging device.

[0107] It should be noted that in this embodiment, the parameters of the Bragg reflection structure 8 need to be set to avoid the formation of laser light in the optical cavity.

[0108] Optionally, Figure 9 FIG. 5 is a top view of a light-emitting structure provided in an embodiment of the present invention. In this embodiment, the closer the light-emitting element is to the light-emitting center of the light-emitting structure, the closer the positive projection of the corresponding effective light-emitting region 221 on the substrate is to the positive projection of the light-emitting center on the substrate. And the farther the light-emitting element is from the light-emitting center of the light-emitting structure, the closer the positive projection of the corresponding effective light-emitting region on the substrate is to the edge corresponding to the light-emitting structure.

[0109] Specifically, in this embodiment, the light-emitting center of the light-emitting structure can be understood as the center where the light beam converges, that is, the light beam needs to be emitted toward the light-emitting center. The specific position of the light-emitting center can be set according to the imaging device corresponding to the light-emitting structure, and the light-receiving center of the imaging device is also the light-emitting center of the light-emitting structure. In some embodiments, the light-emitting center of the light-emitting structure can be the center of the arc surface; in other embodiments, the light-emitting center of the light-emitting structure can also be other positions corresponding to the arc surface. By setting the positions of the effective light-emitting regions corresponding to different light-emitting elements to be different, the degree of deviation from the light-emitting center of the light-emitting element closer to the light-emitting center is smaller, and the degree of deviation from the light-emitting center of the light-emitting element farther from the light-emitting center is larger, and the direction of deviation from the light-emitting center is the edge of the light-emitting structure closer to the light-emitting element. Such a setting can make the emitted light of each light-emitting element 2 converge toward the light-emitting center of the light-emitting structure as much as possible, so that the emitted light of the light-emitting structure can be collected by the imaging device more, and further improve the utilization rate of light energy by the imaging device.

[0110] Optionally, referring to Figure 1 and Figure 8 , the first semiconductor layers corresponding to different light-emitting elements are arranged at intervals. That is to say, different light-emitting elements are independent, and there is no epitaxial waveguide structure between different light-emitting elements, so as to limit the optical crosstalk between different light-emitting elements 2.

[0111] Optionally, in some embodiments, it is also possible to set the side walls of the light-emitting elements to be completely wrapped by electrodes, so as to further reduce the optical crosstalk.

[0112] Optionally, as Figure 10 shown, Figure 10 FIG. 6 is a schematic structural diagram of another light-emitting structure provided in an embodiment of the present invention. The light-emitting structure further includes a light-shielding layer 9, and the light-shielding layer 9 at least partially covers the light-emitting element 2. And the light-shielding layer 9 exposes the electrode (such as the first electrode 25) on the second semiconductor layer. By providing the light-shielding layer 9, the optical crosstalk can be further reduced.

[0113] It should be noted that in the above embodiments, the shape of the arc surface can be a part of a spherical surface or a part of an ellipsoidal surface. Additionally, the shape of the positive projection of the effective light-emitting region on the substrate can be a square, a circle, an annulus, an ellipse, etc.

[0114] Based on the same inventive concept, the present invention also provides a method for manufacturing a light-emitting structure, as Figure 11 shown, Figure 11 is a flowchart of a method for manufacturing a light-emitting structure provided by an embodiment of the present invention. The method for manufacturing a light-emitting structure is used to manufacture the light-emitting structure provided by any embodiment of the present invention. The method for manufacturing a light-emitting structure includes:

[0115] Step S101, providing a substrate;

[0116] Step S102, forming a plurality of light-emitting elements, wherein the light-emitting elements are disposed on the substrate; the light-emitting elements include a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially away from the substrate; at least a part of the surface of at least one of the first semiconductor layer and the second semiconductor layer that is away from the active layer is an arc surface; the active layer includes an effective light-emitting region, the effective light-emitting region is located on the concave side of the arc surface, and the area of the positive projection of the effective light-emitting region on the substrate is smaller than the area of the positive projection of the arc surface on the substrate.

[0117] The technical solution of this embodiment, the light-emitting elements prepared by the method for manufacturing the light-emitting elements adopted have a relatively high light extraction rate.

[0118] Optionally, in some embodiments, the surface of the first semiconductor layer that is away from the active layer includes an arc surface; the whole of the active layer is the effective light-emitting region; that is, the light-emitting structure is Figure 4 the corresponding light-emitting structure in

[0119] Forming a plurality of light-emitting elements includes:

[0120] Forming a first semiconductor epitaxial structure, an active structure, and a second semiconductor epitaxial structure that are sequentially away from the substrate on the substrate;

[0121] Specifically, Figures 12 - 14 is a schematic diagram of the product structure corresponding to the main steps of a method for manufacturing a light-emitting structure provided by an embodiment of the present invention. Refer to Figure 12, the first semiconductor epitaxial structure 211 is an epitaxial structure with a curved surface C1, and is finally used to form the first semiconductor layer. The active structure 222 is used to form the active layer, and the second semiconductor epitaxial structure 231 is used to form the second semiconductor layer. Among them, it is possible to first grow the first semiconductor epitaxial structure, the active layer, and the second semiconductor epitaxial structure on a temporary substrate, then attach another temporary substrate on one side of the second semiconductor epitaxial structure, and then remove the temporary substrate on the side of the first semiconductor epitaxial structure. The curved surface is formed by etching the first semiconductor epitaxial structure. Subsequently, the above-mentioned substrate 1 and the first semiconductor epitaxial structure are bonded through the bonding layer 3, and the temporary substrate on the side of the second semiconductor structure is removed, and finally Figure 12 the structure shown is obtained.

[0122] Subsequently, a mask layer covering the second semiconductor epitaxial structure is formed;

[0123] As Figure 13 shown, a photoresist can be spin-coated to form the mask layer 10.

[0124] Subsequently, using the target structured light as the light source, the mask layer is exposed from the side of the substrate away from the active structure. Among them, the target structured light converges to the effective light-emitting area after passing through the curved surface.

[0125] Specifically, according to the reversibility of light, the part of the light emitted from the effective light-emitting area that can be emitted from the light-emitting element will also converge to the effective light-emitting area if irradiated with light in the opposite direction. Therefore, the target structured light can be light that can be effectively collected by the imaging device. And since both the active layer and the second semiconductor layer are relatively thin, it can be considered that the effective light-emitting area coincides with the corresponding area on the mask layer 10.

[0126] Subsequently, the unexposed mask layer is removed.

[0127] Specifically, as Figure 14 shown, through development and etching, the exposed mask layer is retained.

[0128] Subsequently, using the mask layer as a mask, the second semiconductor structure is etched to form the second semiconductor layer, and the active structure is etched to form the active layer.

[0129] Specifically, using the mask layer as a mask, the light-emitting element is etched, and finally the structure shown in Figure 4 is obtained. The preparation method of this embodiment can be understood as a self-aligned etching method to ensure that the position of the effective light-emitting area is the required position. In addition, using the self-aligned etching method, when the position of the curved surface is deviated, the position of the effective light-emitting area can be adaptively adjusted.

[0130] Optionally, in some other embodiments, the surface of the first semiconductor layer away from the active layer includes an arc surface; the light-emitting structure further includes a first electrode, the first electrode is located on the side of the second semiconductor layer away from the substrate, and the orthographic projection of the first electrode on the substrate coincides with the orthographic projection of the effective light-emitting region on the substrate. That is to say, the light-emitting structure of this embodiment corresponds to Figure 5 the light-emitting structure shown in. The light-emitting structure can also be fabricated by a self-alignment method.

[0131] More specifically, forming a plurality of light-emitting elements includes:

[0132] Forming a first semiconductor epitaxial structure, an active layer, and a second semiconductor layer on the substrate in sequence away from the substrate;

[0133] Specifically, Figures 15 - 17 is a schematic diagram of the product structure corresponding to the main steps of another method for fabricating a light-emitting structure provided by an embodiment of the present invention. Referring to Figure 15 , the method of forming the first semiconductor epitaxial structure 211, the active layer 22, and the second semiconductor layer 23 on the substrate is similar to the method of forming the active structure described above, and will not be elaborated here.

[0134] Subsequently, a mask layer is formed on the front side of the second semiconductor layer away from the substrate.

[0135] Specifically, as Figure 16 shown, a photoresist can be spin-coated to form the mask layer 10.

[0136] Subsequently, using the target structured light as a light source, the mask layer is exposed from the side of the substrate away from the active layer; wherein, the target structured light converges to the corresponding effective light-emitting region after passing through the arc surface.

[0137] Specifically, the specific type of the target structured light can refer to the description above and will not be elaborated here.

[0138] Subsequently, the exposed mask layer is removed;

[0139] Specifically, as Figure 17 shown, in this embodiment, the exposed mask layer can be removed.

[0140] Subsequently, a first electrode is formed at the part where the mask layer is removed.

[0141] Specifically, it can be to first form the first electrode over the entire surface, and then etch away the part located on the mask layer 10, so as to only retain the required first electrode to form Figure 5 the structure shown.

[0142] Optionally, in some other embodiments, the surface of the second semiconductor layer away from the active layer includes an arc surface; the light-emitting structure further includes a reflective layer, the reflective layer is located on the side of the arc surface away from the substrate, and the reflective layer covers the arc surface; the light-emitting element further includes a tunneling junction, and the orthographic projection of the tunneling junction on the substrate coincides with the orthographic projection of the effective light-emitting region on the substrate. That is to say, the light-emitting structure corresponds to Figure 6 the light-emitting structure shown in. The above light-emitting structure can also be prepared by a self-alignment method.

[0143] Specifically, forming a plurality of light-emitting elements includes:

[0144] providing a first temporary substrate and a first semiconductor structure, an active structure, a second semiconductor structure, and a reflective layer that are sequentially away from the first temporary substrate;

[0145] Specifically, Figures 18 - 21 is a schematic diagram of the product structure corresponding to the main steps of another method for preparing a light-emitting structure provided by an embodiment of the present invention. As Figure 18 shown, a second semiconductor structure 231, an active structure 221, and a first semiconductor structure 211 can be sequentially grown on a substrate, and then the first temporary substrate 101 is bonded to one side of the first semiconductor structure 211, and the above substrate is removed. The second semiconductor structure 231 is etched to obtain an arc surface, and then a reflective layer 26 is formed on one side of the arc surface.

[0146] Subsequently, the first temporary substrate is removed, and a tunneling junction layer is formed on the surface of the first semiconductor structure;

[0147] Specifically, as Figure 19 shown, a second temporary substrate 102 can be bonded to one side of the reflective layer 26, and it can be bonded through an adhesive layer 31. Then as Figure 20 shown, a tunneling junction layer 281 is grown on one side of the first semiconductor structure.

[0148] Subsequently, using the target structured light as a light source, the tunneling junction layer is exposed from the side of the tunneling junction layer away from the active structure; wherein, the target structured light converges to the corresponding effective light-emitting region after passing through the arc surface.

[0149] Specifically, the specific description of the target structured light can refer to the description in the above part of this article, and will not be elaborated here. Using the target structured light can expose the part of the tunneling junction layer 281 corresponding to the effective light-emitting region.

[0150] Further, before exposing the tunneling junction layer from the side of the tunneling junction layer away from the active structure using the target structured light, it further includes:

[0151] forming a transparent substrate covering the tunneling junction layer, and the transparent substrate has the same thickness and refractive index as the substrate.

[0152] Specifically, as Figure 20 shown, since the emitted light of the final light-emitting element needs to pass through the substrate, in order to make the optical path closer to the optical path of the effective light-emitting region during the exposure of the target structured light, a transparent substrate 103 can be provided, so that the part of the tunneling junction layer corresponding to the effective light-emitting region is finally exposed.

[0153] Subsequently, the unexposed tunneling junction layer is removed to form a tunneling junction.

[0154] Specifically, as Figure 21 shown, the tunneling junction 28 can be formed by etching. Finally, a transparent electrode, a substrate, etc. are fabricated to form the structure shown in Figure 6 .

[0155] Based on the same inventive concept, the present invention also provides a display system, which includes the light-emitting structure and the imaging device provided in any embodiment of the present invention. The imaging device is disposed on the light-emitting surface of the light-emitting structure, and the arc surface is used to converge the emitted light of the light-emitting element to the imaging device. The display system further includes an array substrate for driving the light-emitting structure. Since the display system provided in the embodiment of the present invention includes the light-emitting structure provided in the embodiment of the present invention, it also has the same beneficial effects and will not be described in detail here.

[0156] It should be understood that the various forms of the flow shown above can be used, steps can be reordered, added or deleted. For example, the steps described in the present invention can be executed in parallel, sequentially or in a different order, as long as the desired results of the technical solution of the present invention can be achieved, and no limitation is made herein.

[0157] The above specific embodiments do not constitute a limitation to the protection scope of the present invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions and improvements made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. A light emitting structure, characterized in that: The light emitting structure comprises: substrate; A plurality of light-emitting elements are arranged on the substrate; the light-emitting elements include a first semiconductor layer, an active layer, and a second semiconductor layer which are sequentially away from the substrate; at least a portion of a surface of at least one of the first semiconductor layer and the second semiconductor layer which is away from the active layer is an arc-shaped surface; the active layer includes an effective light-emitting area, the effective light-emitting area is located on a concave side of the arc-shaped surface, and an orthographic projection area of ​​the effective light-emitting area on the substrate is smaller than an orthographic projection area of ​​the arc-shaped surface on the substrate.

2. The light emitting structure according to claim 1, characterized in that: An angle between a line connecting the center of the effective light-emitting area and the center of the arc surface and a line connecting the edge of the effective light-emitting area and the center of the arc surface is less than or equal to 5 degrees.

3. The light emitting structure according to claim 1, characterized in that: The surface of the first semiconductor layer away from the active layer includes the arc-shaped surface; the surface of the substrate away from the active layer is the light-emitting surface of the light-emitting structure.

4. The light emitting structure according to claim 3, characterized in that: The entire active layer is the effective light emitting area; and / or, The light emitting element further includes a first electrode, which is located on a side of the second semiconductor layer away from the substrate, and an orthographic projection of the first electrode on the substrate coincides with an orthographic projection of the effective light emitting area on the substrate.

5. The light emitting structure according to claim 4, characterized in that: The light emitting structure further includes a bonding layer, and the bonding layer is located between the substrate and the first semiconductor layer.

6. The light emitting structure according to claim 3, characterized in that: The doping type of the first semiconductor layer is n-type, and the doping type of the second semiconductor layer is p-type.

7. The light emitting structure according to claim 3, characterized in that: The light emitting structure further includes a second electrode covering the plurality of light emitting elements and exposing the second semiconductor layer of the light emitting elements.

8. The light emitting structure according to claim 1, characterized in that: The surface of the second semiconductor layer away from the active layer includes the arc-shaped surface; the surface of the substrate away from the active layer is the light-emitting surface of the light-emitting structure.

9. The light emitting structure according to claim 8, characterized in that: The doping type of the first semiconductor layer is p-type, and the doping type of the second semiconductor layer is n-type.

10. The light emitting structure according to claim 8, characterized in that: The light emitting element further includes a reflective layer, wherein the reflective layer is located on a side of the arc-shaped surface away from the substrate, and the reflective layer covers the arc-shaped surface.

11. The light emitting structure according to claim 10, characterized in that: The light emitting structure further includes a Bragg reflection structure, and the Bragg reflection structure is located between the first semiconductor layer and the substrate; and / or, The light emitting element further comprises a tunnel junction, and an orthographic projection of the tunnel junction on the substrate coincides with an orthographic projection of the effective light emitting area on the substrate; The light emitting structure further includes a transparent conductive layer, wherein the transparent conductive layer is located between the substrate and the light emitting element, and the transparent conductive layer covers the tunnel junctions of the plurality of light emitting elements.

12. The light emitting structure according to claim 1, characterized in that: Among the plurality of light-emitting elements, the closer the light-emitting element is to the light-emitting center of the light-emitting structure, the closer the orthographic projection of the corresponding effective light-emitting area on the substrate is to the orthographic projection of the light-emitting center on the substrate; Furthermore, the further away the light emitting element is from the light emitting center of the light emitting structure, the closer the orthographic projection of the corresponding effective light emitting area on the substrate is to the corresponding edge of the light emitting structure.

13. The light emitting structure according to claim 1, characterized in that: The first semiconductor layers of different light emitting elements are arranged at intervals.

14. The light emitting structure according to claim 1, characterized in that: The light emitting structure further includes a light shielding layer at least partially covering the light emitting element.

15. A method for preparing a light-emitting structure, characterized in that: include: providing a substrate; forming a plurality of light-emitting elements, wherein the light-emitting elements are disposed on the substrate; the light-emitting elements include a first semiconductor layer, an active layer, and a second semiconductor layer which are sequentially away from the substrate; At least a portion of a surface of at least one of the first semiconductor layer and the second semiconductor layer away from the active layer is a curved surface; the active layer includes an effective light-emitting area, the effective light-emitting area is located on the concave side of the curved surface, and an orthographic projection area of ​​the effective light-emitting area on the substrate is smaller than an orthographic projection area of ​​the curved surface on the substrate.

16. The method for preparing a light emitting structure according to claim 15, characterized in that: The surface of the first semiconductor layer away from the active layer includes the arc-shaped surface; The entire active layer is the effective light-emitting area; The forming of a plurality of light emitting elements comprises: forming a first semiconductor epitaxial structure, an active structure, and a second semiconductor epitaxial structure on the substrate, which are sequentially away from the substrate; forming a mask layer covering the second semiconductor epitaxial structure; Using target structured light as a light source, the mask layer is exposed from a side of the substrate away from the active structure; wherein the target structured light converges to a corresponding effective light emitting area after passing through the arc surface; removing the mask layer that has not been exposed; Using the mask layer as a mask, the second semiconductor structure is etched to form the second semiconductor layer, and the active structure is etched to form the active layer.

17. The method for preparing a light emitting structure according to claim 15, characterized in that: The surface of the first semiconductor layer away from the active layer includes the arc surface; the light emitting structure further includes a first electrode, the first electrode is located on a side of the second semiconductor layer away from the substrate, and the orthographic projection of the first electrode on the substrate coincides with the orthographic projection of the effective light emitting area on the substrate; The forming of a plurality of light emitting elements comprises: forming a first semiconductor epitaxial structure, the active layer and the second semiconductor layer on the substrate, which are sequentially away from the substrate; forming a mask layer on the entire surface of a side of the second semiconductor layer away from the substrate; Using target structured light as a light source, the mask layer is exposed from a side of the substrate away from the active layer; wherein the target structured light converges to a corresponding effective light-emitting area after passing through the arc surface; removing the exposed mask layer; The first electrode is formed at the portion where the mask layer is removed.

18. The method for preparing a light emitting structure according to claim 15, characterized in that: The surface of the second semiconductor layer away from the active layer includes the arc surface; the light emitting structure further includes a reflective layer, the reflective layer is located on a side of the arc surface away from the substrate, and the reflective layer covers the arc surface; The light emitting element further comprises a tunnel junction, and an orthographic projection of the tunnel junction on the substrate coincides with an orthographic projection of the effective light emitting area on the substrate; The forming of a plurality of light emitting elements comprises: Providing a first temporary substrate and a first semiconductor structure, an active structure, a second semiconductor structure and the reflective layer which are sequentially away from the first temporary substrate; removing the first temporary substrate and forming a tunneling junction layer on the surface of the first semiconductor structure; forming a mask layer covering the tunnel junction layer; Using the target structured light as the light source, the mask layer is exposed from the side of the tunneling junction layer away from the active structure; wherein the target structured light converges to the corresponding effective light emitting area after passing through the arc surface; The unexposed tunnel junction layer is removed to form the tunnel junction.

19. The method for preparing a light emitting structure according to claim 18, characterized in that: Before exposing the tunneling junction layer from a side of the tunneling junction layer away from the active structure using the target structure light as a light source, the method further includes: A transparent substrate covering the tunneling junction layer is formed; wherein the transparent substrate has the same thickness and refractive index as the substrate.

20. A display system, characterized in that: The display system comprises the light emitting structure and imaging device according to any one of claims 1 to 14; The imaging device is arranged on the light emitting surface of the light emitting structure, and the arc surface is used to converge the emitted light of the light emitting element to the imaging device.

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