Light-emitting device, preparation method thereof and display device

Abstract

The invention discloses a light-emitting device, a preparation method thereof and a display device, the light-emitting device comprises a cathode, a light-emitting layer, a light conversion layer and an anode which are stacked in sequence, the light conversion layer comprises a light conversion material and an electron-withdrawing material, and the electron-withdrawing material comprises an aromatic compound with an electron-withdrawing group. The light conversion layer comprises the light conversion material and an electron-withdrawing material, on one hand, the light conversion material can effectively convert long-wavelength light entering the light conversion material into short-wavelength light, and therefore the light-emitting device which is long in service life and can emit the short-wavelength light is obtained; the practical application prospect and the commercial value of the short-wave light-emitting device are greatly improved; on the other hand, due to the fact that the hole transmission capacity of the light conversion material is low, the electron-withdrawing material is added into the light conversion layer, the hole injection efficiency of the light-emitting device can be effectively improved, charge balance in the light-emitting layer of the light-emitting device is improved, and the service life of the light-emitting device is prolonged.

Description

Technical Field

[0001] This application relates to the technical field of light-emitting devices, and particularly to a light-emitting device, a preparation method thereof, and a display device. Background Art

[0002] Currently, the widely used light-emitting devices are organic light-emitting devices (OLEDs) and quantum dot light-emitting devices (QLEDs). Due to their excellent display performances such as self-luminescence, simple structure, ultra-thinness, fast response speed, wide viewing angle, low power consumption, and flexible display, OLEDs have become the mainstream technology in the display technology field. QLEDs have the advantages of saturated emission light color, adjustable wavelength, low turn-on voltage, good solution processability, easy fine control of quantum dots, etc., and have high photoluminescence and electroluminescence quantum yields, and have become a strong competitor to OLEDs in recent years.

[0003] The structures of traditional OLED and QLED devices generally include an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, and a cathode. Under the action of an electric field, the holes generated by the anode and the electrons generated by the cathode of the light-emitting device move, are respectively injected into the hole transport layer and the electron transport layer, and finally migrate to the light-emitting layer. When the two meet in the light-emitting layer, energy excitons are generated, thereby exciting the light-emitting molecules to finally generate visible light.

[0004] The lifespan of existing light-emitting devices is relatively short and needs to be further improved. Summary of the Invention

[0005] In view of this, this application provides a light-emitting device.

[0006] The embodiments of this application are implemented as follows. A light-emitting device includes a cathode, a light-emitting layer, a light conversion layer, and an anode stacked in sequence. The light conversion layer includes a light conversion material and an electron-withdrawing material, and the electron-withdrawing material includes an aromatic compound having an electron-withdrawing group.

[0007] Optionally, in some embodiments of this application, the light conversion layer is composed of the light conversion material and the electron-withdrawing material; and / or

[0008] The light conversion material is formed by coupling silicon quantum dots and anthracene compounds.

[0009] Optionally, in some embodiments of this application, the aromatic compound having an electron-withdrawing group includes one or more of 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyano-p-quinodimethane, 1,3,4,5,7,8-hexafluorotetracyano naphthoquinone dimethane, [6,6]-phenyl C61 butyric acid methyl ester, 7,7,8,8-tetracyanoquinodimethane, and C60.

[0010] Optionally, in some embodiments of the present application, the light conversion material includes a coupled hybrid, and the coupled hybrid is mainly formed by coupling silicon quantum dots and anthracene compounds.

[0011] Optionally, in some embodiments of the present application, the anthracene compound has a structural formula shown in the following formula (I):

[0012]

[0013] Wherein,

[0014] Each occurrence of L is independently selected from at least one of a single bond, an unsubstituted or halogen-, cyano-, C 1 -C 20 alkyl, C 1 -C 20 alkoxy, C 1 -C 20 alkylthio, aryl with 6 to 60 ring atoms, aryloxy with 6 to 60 ring atoms, arylthio with 6 to 60 ring atoms substituted -(CH 2 ) n1 -, -(CH 2 ) n2 CH=CH(CH 2 ) n3 -, -(CH 2 ) n4 C≡C(CH 2 ) n5 -, -(CH 2 ) n6 O(CH 2 ) n7 -, -(CH 2 ) n8 (OCH 2 ) n9 -, -(CH 2 ) n10 CO(CH 2 ) n11 -, -(CH 2 ) n12 NHCO(CH 2 ) n13 -, -(CH 2 ) n14 CONH(CH 2 ) n15 -, -(CH 2 ) n16 OCO(CH 2 ) n17 - and -(CH 2 ) n18 COO(CH 2 )n19 one or more combinations of the following, where n 1 to n 19 are each independently selected from integers from 1 to 20;

[0015] R 1 each occurrence is independently selected from C≡C or CR 4 =CR 5 ;

[0016] R 2 、R 4 、R 5 each occurrence is independently selected from H, or a straight-chain alkyl group having 1 to 20 carbon atoms, or a straight-chain alkoxy group having 1 to 20 carbon atoms, or a straight-chain thioalkoxy group having 1 to 20 carbon atoms, or a branched-chain alkyl group having 3 to 20 carbon atoms, or a branched-chain alkoxy group having 3 to 20 carbon atoms, or a branched-chain thioalkoxy group having 3 to 20 carbon atoms, or a cyclic alkyl group having 3 to 20 carbon atoms, or a cyclic alkoxy group having 3 to 20 carbon atoms, or a cyclic thioalkoxy group having 3 to 20 carbon atoms, or a silyl group, or a keto group having 1 to 20 carbon atoms, or an alkoxycarbonyl group having 2 to 20 carbon atoms, or an aryloxycarbonyl group having 7 to 20 carbon atoms, cyano, carbamoyl, halocarbonyl, formyl, isocyano, isocyanate, thiocyanate, isothiocyanate, hydroxy, nitro, amino, -CF 3 、-Cl, -Br, -F, -I, or an alkenyl group having 2 to 20 carbon atoms, or a substituted or unsubstituted aromatic group having 6 to 60 ring atoms, or a substituted or unsubstituted heteroaromatic group having 5 to 60 ring atoms, or a substituted or unsubstituted aryloxy group having 6 to 60 ring atoms, or a substituted or unsubstituted heteroaryloxy group having 5 to 60 ring atoms, or a combination of these groups;

[0017] n is any integer from 1 to 5.

[0018] Optionally, in some embodiments of the present application, each occurrence of L is independently selected from a single bond, unsubstituted or substituted by halogen, cyano, C 1 -C 10 alkyl, C 1 -C 10 alkoxy, C 1 -C 10 alkylthio, an aryl group having 6 to 30 ring atoms, an aryloxy group having 6 to 30 ring atoms, an arylthio group having 6 to 30 ring atoms, at least one of which is substituted by -(CH 2 ) n1 -, -(CH 2 ) n2 CH=CH(CH 2) n3 -, -(CH 2 ) n4 C≡C(CH 2 ) n5 -, -(CH 2 ) n6 O(CH 2 ) n7 -, -(CH 2 ) n8 (OCH 2 ) n9 -, -(CH 2 ) n10 CO(CH 2 ) n11 -, -(CH 2 ) n12 NHCO(CH 2 ) n13 -, -(CH 2 ) n14 CONH(CH 2 ) n15 -, -(CH 2 ) n16 OCO(CH 2 ) n17 -, and -(CH 2 ) n18 COO(CH 2 ) n19 - or a combination of two or more thereof, wherein n 1 to n 19 each independently selected from the integers 1 - 10; and / or

[0019] R 2 , R 4 , R 5 each occurrence is independently selected from H, or a straight-chain alkyl having 1 to 10 C atoms, or a straight-chain alkoxy having 1 to 10 C atoms, or a straight-chain thioalkoxy having 1 to 10 C atoms, or a branched-chain alkyl having 3 to 10 C atoms, or a branched-chain alkoxy having 3 to 10 C atoms, or a branched-chain thioalkoxy having 3 to 10 C atoms, or a cyclic alkyl having 3 to 10 C atoms, or a cyclic alkoxy having 3 to 10 C atoms, or a cyclic thioalkoxy having 3 to 10 C atoms, or a silyl group, or a keto group having 1 to 10 C atoms, or an alkoxycarbonyl group having 2 to 10 C atoms, or an aryloxycarbonyl group having 7 to 10 C atoms, cyano, carbamoyl, halocarbonyl, formyl, isocyano, isocyanate, thiocyanate, isothiocyanate, hydroxy, nitro, amino, -CF 3, -Cl, -Br, -F, -I, or an alkenyl group having 2 to 10 C atoms, or a substituted or unsubstituted aromatic group having 6 to 60 ring atoms, or a substituted or unsubstituted heteroaromatic group having 5 to 30 ring atoms, or a substituted or unsubstituted aryloxy group having 6 to 30 ring atoms, or a substituted or unsubstituted heteroaryloxy group having 5 to 30 ring atoms, or a combination of these groups.

[0020] Optionally, in some embodiments of the present application, each occurrence of L is independently selected from a single bond, -(CH 2 ) n1 - or a combination of one or two of them, where n 1 is an integer selected from 1 to 5; and / or

[0021] R 2 、R 4 、R 5 Each occurrence is independently selected from H, or a straight-chain alkyl group having 1 to 10 C atoms, or a straight-chain alkoxy group having 1 to 10 C atoms, or a straight-chain thioalkoxy group having 1 to 10 C atoms, or a branched-chain alkyl group having 3 to 10 C atoms, or a branched-chain alkoxy group having 3 to 10 C atoms, or a branched-chain thioalkoxy group having 3 to 10 C atoms, -CF 3 、-Cl, -Br, -F, -I, or an alkenyl group having 2 to 10 C atoms, or a combination of these groups.

[0022] Optionally, in some embodiments of the present application, each occurrence of L is selected from a single bond; and / or

[0023] R 2 、R 4 、R 5 Each occurrence is independently selected from H, or a straight-chain alkyl group having 1 to 5 C atoms, or a branched-chain alkyl group having 3 to 8 C atoms, or an alkenyl group having 2 to 5 C atoms, or a combination of these groups.

[0024] Optionally, in some embodiments of the present application, the anthracene compound includes one or more of 9-vinylanthracene, 9-ethynylanthracene, 9-(2-styryl)anthracene, 2-amylanthraquinone, 9,10-dibutoxyanthracene; and / or

[0025] In the light conversion material, the molar ratio of the silicon quantum dots to the anthracene compound is 1:(5 to 20); and / or

[0026] The average particle size of the silicon quantum dots is 3.5 to 5 nm.

[0027] Optionally, in some embodiments of the present application, the light-emitting device further includes a hole transport layer, and the hole transport layer is located between the light-emitting layer and the light conversion layer, or the hole transport layer is located between the light conversion layer and the anode.

[0028] Optionally, in some embodiments of the present application, the light-emitting device further includes a hole injection layer, and the hole injection layer is located between the hole transport layer and the light conversion layer, or the hole injection layer is located between the light conversion layer and the anode, or the hole injection layer is located between the hole transport layer and the anode.

[0029] Optionally, in some embodiments of the present application, the cathode and the anode independently include a doped metal oxide electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a metal elemental electrode or an alloy electrode respectively. The material of the doped metal oxide electrode includes one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, aluminum-doped magnesium oxide, cadmium-doped zinc oxide. The composite electrode includes AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO 2 / Ag / TiO 2 、TiO 2 / Al / TiO 2 、ZnS / Ag / ZnS, ZnS / Al / ZnS, Ca / Al, LiF / Ca, LiF / Al, BaF 2 / Al, CsF / Al, CaCO 3 / Al or BaF 2 / Ca / Al, the material of the metal elemental electrode includes one or more of Ag, Ni, Pt, Au, Ir, Cu, Mo, Al, Ca, Mg and Ba, and the alloy electrode includes an Au:Mg alloy electrode or an Ag:Mg alloy electrode; and / or

[0030] The material of the hole injection layer includes one or more of 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, PEDOT, PEDOT:PSS, a derivative of PEDOT:PSS doped with s-MoO 3 、4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane, copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide and copper oxide; and / or

[0031] The materials of the hole transport layer include 4,4'-N,N'-dicarbazolyl-biphenyl, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(N-vinylcarbazole) and its derivatives, N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine, spiro-NPB, poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexoxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene, 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline], 1,3-bis(carbazol-9-yl)benzene, polyaniline, polypyrrole, poly(p-)phenylene vinylene, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO 3 、doped or undoped WO 3 、doped or undoped V 2 O 5 、doped or undoped p-type gallium nitride, doped or undoped CrO 3 、doped or undoped CuO, one or more of them; and / or

[0032] The material of the light-emitting layer includes one or more of an organic light-emitting material and a quantum dot light-emitting material. The organic light-emitting material includes one or more of 4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridineiridium(III)], 4,4',4''-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridineiridium], diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent material, TTPX fluorescent material, TBRb fluorescent material, DBP fluorescent material, delayed fluorescence material, TTA material, thermally activated delayed material, polymer containing B-N covalent bond, hybrid local charge transfer excited state material, exciplex luminescent material, polyacetylene and its derivatives, poly(phenylene) and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives;The quantum dot light-emitting material includes one or more of single-structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials. The materials of the single-structure quantum dots, the core materials of the core-shell structure quantum dots, and the shell materials of the core-shell structure quantum dots are each independently selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. The shell layer of the core-shell structure quantum dots includes one or more layers. The II-VI group compounds include one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds include one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compounds include one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI group compounds include one or more of CuInS; 2 , CuInSe 2 , and AgInS 2 ; The perovskite semiconductor material includes doped or undoped inorganic perovskite semiconductors or organic-inorganic hybrid perovskite semiconductors. The structural general formula of the inorganic perovskite semiconductor is AMX 3 , where A is Cs+ ions, M is a divalent metal cation, including Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ , Eu 2+ or more than one of them, X is a halogen anion, including Cl - , Br - , I - or more than one of them; The structural general formula of the organic-inorganic hybrid perovskite semiconductor is BMX 3 , where B is an organic amine cation, including CH 3 (CH 2 ) n-2 NH 3 + or [NH 3 (CH 2 ) n NH 3 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ , Sn 2+ , Cu 2+ , Ni 2 + , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ , Eu 2+ or more than one of them, X is a halogen anion, including Cl - , Br - , I - or more than one of them; and / or

[0033] The light-emitting device further includes an electron transport layer, the electron transport layer is located between the cathode and the light-emitting layer, the material of the electron transport layer includes one or more of an inorganic electron transport material and an organic electron transport material, and the inorganic electron transport material includes one or more of a metal oxide, a doped metal oxide, a IIB-VIA group semiconductor material, a IIIA-VA group semiconductor material, and a IB-IIIA-VIA group semiconductor material, and the metal oxide includes ZnO, TiO 2 , SnO​2 , ZrO 2 , Ta 2 O 5 One or more of the following; the metal oxides in the doped metal oxides include ZnO, TiO 2 , SnO 2 , ZrO 2 , Ta 2 O 5 , Al 2 O 3 One or more of the following, the dopants in the doped metal oxides include one or several of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, Sn; the IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, CdS; the IIIA-VA group semiconductor materials include one or more of InP, GaP; the IB-IIIA-VIA group semiconductor materials include one or more of CuInS, CuGaS; the organic electron transport materials include one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, hydroxyquinoline compounds; and / or

[0034] The thickness of the cathode is 95 - 105 nm; and / or

[0035] The thickness of the anode is 75 - 85 nm; and / or

[0036] The thickness of the light-emitting layer is 35 - 45 nm; and / or

[0037] The thickness of the light conversion layer is 15 - 25 nm; and / or

[0038] The thickness of the electron transport layer is 35 - 45 nm; and / or

[0039] The thickness of the hole transport layer is 20 - 30 nm; and / or

[0040] The thickness of the hole injection layer is 20 - 30 nm.

[0041] Correspondingly, the embodiments of the present application also provide a method for manufacturing a light-emitting device, including the following steps:

[0042] Provide a light-emitting device preform, the light-emitting device preform includes a cathode and a light-emitting layer;

[0043] Provide a mixed material of a light conversion material and an electron-withdrawing material, and dispose the mixed material on the light-emitting layer to obtain a light conversion layer;

[0044] Fabricate an anode on the light conversion layer to obtain a light-emitting device;

[0045] Alternatively,

[0046] provide a light-emitting device preform, the light-emitting device preform including an anode;

[0047] provide a mixed material of a light conversion material and an electron-withdrawing material, and dispose the mixed material on the light-emitting device preform to obtain a light conversion layer;

[0048] successively prepare a stacked light-emitting layer and a cathode on the light conversion layer to obtain a light-emitting device.

[0049] Optionally, in some embodiments of the present application, the preparation method of the light conversion material includes:

[0050] provide a silicon quantum dot solution, the silicon quantum dot solution including silicon quantum dots;

[0051] add an anthracene compound and a radical initiator to the silicon quantum dot solution and heat to obtain a light conversion material.

[0052] Optionally, in some embodiments of the present application, a ligand is connected to the surface of the silicon quantum dots, and the ligand includes at least one of an alkyl ligand, an acid ligand, a thiol ligand, an amine ligand, a phosphine ligand, an oxyphosphine ligand, a phospholipid, a lecithin, and a polyvinylpyridine; and / or

[0053] the radical initiator includes one or more of azobisisobutyronitrile, benzoyl peroxide, and diisopropylbenzene peroxide; and / or

[0054] the molar ratio of the anthracene compound to the silicon quantum dots ranges from (5 to 10):1; and / or

[0055] the molar ratio of the radical initiator to the silicon quantum dots ranges from 1:(50 to 100); and / or

[0056] the heating temperature is 50 to 80 °C and the time is 15 to 30 h.

[0057] Correspondingly, an embodiment of the present application further provides a display device including the above-mentioned light-emitting device.

[0058] A light conversion layer is provided between the light-emitting layer and the anode of the light-emitting device described in this application. The light conversion layer includes the light conversion material and the electron-withdrawing material. On the one hand, the light conversion material can effectively convert long-wavelength light entering it into short-wavelength light, thereby obtaining a light-emitting device that can emit short-wavelength light and has a long lifespan, and further greatly enhancing the practical application prospects and commercial value of the light-emitting device with a shorter wavelength. On the other hand, since the hole-transporting ability of the light conversion material is low, adding the electron-withdrawing material described in this application to the light conversion layer can effectively improve the hole injection efficiency of the light-emitting device, thereby improving the charge balance in the light-emitting layer of the light-emitting device and further enhancing the lifespan of the light-emitting device. BRIEF DESCRIPTION OF THE DRAWINGS

[0059] To more clearly illustrate the technical solutions in the embodiments of this application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of this application. For those skilled in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0060] Figure 1 is a schematic structural diagram of a light-emitting device provided by an embodiment of this application;

[0061] Figure 2 is a schematic structural diagram of another light-emitting device provided by an embodiment of this application;

[0062] Figure 3 is a schematic structural diagram of yet another light-emitting device provided by an embodiment of this application;

[0063] Figure 4 is a schematic structural diagram of yet another light-emitting device provided by an embodiment of this application;

[0064] Figure 5 is a schematic structural diagram of yet another light-emitting device provided by an embodiment of this application;

[0065] Figure 6 is a schematic structural diagram of yet another light-emitting device provided by an embodiment of this application;

[0066] Figure 7 is a schematic structural diagram of yet another light-emitting device provided by an embodiment of this application;

[0067] Figure 8 is a flowchart of a method for manufacturing a light-emitting device provided by an embodiment of this application;

[0068] Figure 9 is a flowchart of a method for manufacturing another light-emitting device provided by an embodiment of this application.

[0069] Reference numerals:

[0070] Light-emitting device 100; cathode 10; light-emitting layer 20; light conversion layer 30; anode 40; electron transport layer 50; hole transport layer 60; hole injection layer 70. Detailed implementation

[0071] The following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of the present application. In addition, it should be understood that the specific implementation manners described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0072] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the technical field to which this invention belongs. The terms used in the description of the present invention in this specification are only for the purpose of describing specific embodiments, and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

[0073] In the present application, unless otherwise stated, the orientation terms such as "upper" and "lower" generally refer to the upper and lower in the actual use or working state of the device, specifically the drawing direction in the drawings; while "inner" and "outer" refer to the outline of the device. In addition, in the description of the present application, the term "comprising" means "including but not limited to". The terms first, second, third, etc. are only used as labels and do not impose numerical requirements or establish an order.

[0074] In the present application, "and / or" describes the association relationship of associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist simultaneously, and B exists alone. Where A and B can be singular or plural.

[0075] In the present application, "at least one" means one or more, and "multiple" means two or more. "One or more kinds", "at least one of the following items" or similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b, or c", or, "at least one of a, b, and c" can both represent: a, b, c, a-b (that is, a and b), a-c, b-c, or a-b-c, where a, b, and c can be single or multiple respectively.

[0076] In this application, when forming another layer "on" a certain layer, the so-called "on" is a broad concept, which can mean that the formed another layer is adjacent to the certain layer, or there are other spacer structure layers between the another layer and the certain layer. For example, when forming a second electrode "on" the first charge carrier functional layer, the so-called "on" can mean that the formed second electrode is adjacent to the first charge carrier functional layer, or there are other spacer structure layers between the second electrode and the first charge carrier functional layer, such as a light-emitting layer.

[0077] Various embodiments of the present application may exist in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be construed as a rigid limitation on the scope of the present application; therefore, it should be considered that the description of the range has specifically disclosed all possible sub-ranges and individual values within the range. For example, it should be considered that the description of the range from 1 to 6 has specifically disclosed sub-ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and individual numbers within the range, such as 1, 2, 3, 4, 5, and 6, which applies regardless of the range. Additionally, whenever a numerical range is indicated herein, it means including any cited number (fraction or integer) within the indicated range.

[0078] The QLED device is a new type of light-emitting diode with advantages such as high brightness, high color purity, low voltage, and long lifespan. However, in practical applications, there are problems with the performance of blue devices in QLED devices. The poor performance of blue quantum dot devices limits their application scope and performance. The performance of quantum dots is a key factor affecting the performance of QLED devices. However, the existing quantum dots, especially those of short-wavelength blue quantum dots, result in shorter lifespans of the fabricated light-emitting devices.

[0079] The technical solution of the present application is as follows:

[0080] In a first aspect, please refer to Figure 1 , an embodiment of the present application provides a light-emitting device 100, including a cathode 10, a light-emitting layer 20, a light conversion layer 30, and an anode 40 stacked in sequence. The light conversion layer 30 includes a light conversion material and an electron-withdrawing material, and the electron-withdrawing material includes an aromatic compound having an electron-withdrawing group. The light-emitting direction of the light-emitting device 100 is the direction pointing from the light-emitting layer 20 to the anode 40, in other words, the light conversion layer 30 is located on the light-emitting side of the light-emitting layer 20 of the light-emitting device 100.

[0081] The light conversion material includes a coupled hybrid, and the coupled hybrid is mainly formed by coupling silicon quantum dots and anthracene compounds.

[0082] The anthracene compound has a structural formula shown in the following formula (I):

[0083]

[0084] Among them,

[0085] Each occurrence of L is independently selected from a single bond, an unsubstituted or halogen-, cyano-, C 1 -C 20 alkyl, C 1 -C 20 alkoxy, C 1 -C 20 alkylthio, aryl having 6 to 60 ring atoms, aryloxy having 6 to 60 ring atoms, arylthio having 6 to 60 ring atoms, or at least one of the substituted -(CH 2 ) n1 -, -(CH 2 ) n2 CH=CH(CH 2 ) n3 -, -(CH 2 ) n4 C≡C(CH 2 ) n5 -, -(CH 2 ) n6 O(CH 2 ) n7 -, -(CH 2 ) n8 (OCH 2 ) n9 -, -(CH 2 ) n10 CO(CH 2 ) n11 -, -(CH 2 ) n12 NHCO(CH 2 ) n13 -, -(CH 2 ) n14 CONH(CH 2 ) n15 -, -(CH 2 ) n16 OCO(CH 2 ) n17 - and -(CH 2 ) n18 COO(CH 2 ) n19 - in one or a combination of two or more thereof, where n 1 to n 19 are each independently selected from integers from 1 to 20;

[0086] R 1 Each occurrence is independently selected from C≡C or CR 4 =CR5 ;

[0087] R 2 、R 4 、R 5 Each occurrence is independently selected from H, or a straight-chain alkyl group having 1 to 20 carbon atoms, or a straight-chain alkoxy group having 1 to 20 carbon atoms, or a straight-chain thioalkoxy group having 1 to 20 carbon atoms, or a branched-chain alkyl group having 3 to 20 carbon atoms, or a branched-chain alkoxy group having 3 to 20 carbon atoms, or a branched-chain thioalkoxy group having 3 to 20 carbon atoms, or a cyclic alkyl group having 3 to 20 carbon atoms, or a cyclic alkoxy group having 3 to 20 carbon atoms, or a cyclic thioalkoxy group having 3 to 20 carbon atoms, or a silyl group, or a ketone group having 1 to 20 carbon atoms, or an alkoxycarbonyl group having 2 to 20 carbon atoms, or an aryloxycarbonyl group having 7 to 20 carbon atoms, a cyano group, a carbamoyl group, a halocarbonyl group, a formyl group, an isocyano group, an isocyanate group, a thiocyanate group, an isothiocyanate group, a hydroxyl group, a nitro group, an amino group, -CF 3 、-Cl, -Br, -F, -I, or an alkenyl group having 2 to 20 carbon atoms, or a substituted or unsubstituted aromatic group having 6 to 60 ring atoms, or a substituted or unsubstituted heteroaromatic group having 5 to 60 ring atoms, or a substituted or unsubstituted aryloxy group having 6 to 60 ring atoms, or a substituted or unsubstituted heteroaryloxy group having 5 to 60 ring atoms, or a combination of these groups;

[0088] n is any integer from 1 to 5.

[0089] In some embodiments, each occurrence of L is independently selected from a single bond, unsubstituted or substituted by a halogen, a cyano group, C 1 -C 10 alkyl, C 1 -C 10 alkoxy, C 1 -C 10 alkylthio, an aryl group having 6 to 30 ring atoms, an aryloxy group having 6 to 30 ring atoms, an arylthio group having 6 to 30 ring atoms, at least one of which is substituted on -(CH 2 ) n1 -, -(CH 2 ) n2 CH=CH(CH 2 ) n3 -, -(CH 2 ) n4 C≡C(CH 2 ) n5 -, -(CH 2 ) n6 O(CH 2 ) n7 -、-(CH2 ) n8 (OCH 2 ) n9 -, -(CH 2 ) n10 CO(CH 2 ) n11 -, -(CH 2 ) n12 NHCO(CH 2 ) n13 -, -(CH 2 ) n14 CONH(CH 2 ) n15 -, -(CH 2 ) n16 OCO(CH 2 ) n17 - and -(CH 2 ) n18 COO(CH 2 ) n19 - or a combination of two or more thereof, wherein n 1 to n 19 are each independently selected from integers from 1 to 10.

[0090] Furthermore, in some embodiments, each occurrence of L is independently selected from a single bond, -(CH 2 ) n1 -, or a combination of two or more thereof, wherein n 1 is selected from integers from 1 to 5.

[0091] Furthermore, in some embodiments, each occurrence of L is selected from a single bond.

[0092] In some embodiments, R 2 , R 4 , R 5 each occurrence is independently selected from H, or a straight-chain alkyl having 1 to 10 C atoms, or a straight-chain alkoxy having 1 to 10 C atoms, or a straight-chain thioalkoxy having 1 to 10 C atoms, or a branched-chain alkyl having 3 to 10 C atoms, or a branched-chain alkoxy having 3 to 10 C atoms, or a branched-chain thioalkoxy having 3 to 10 C atoms, or a cyclic alkyl having 3 to 10 C atoms, or a cyclic alkoxy having 3 to 10 C atoms, or a cyclic thioalkoxy having 3 to 10 C atoms, or a silyl group, or a keto group having 1 to 10 C atoms, or an alkoxycarbonyl group having 2 to 10 C atoms, or an aryloxycarbonyl group having 7 to 10 C atoms, a cyano group, a carbamoyl group, a halocarbonyl group, a formyl group, an isocyano group, an isocyanate group, a thiocyanate group, an isothiocyanate group, a hydroxyl group, a nitro group, an amino group, -CF 3, -Cl, -Br, -F, -I, or an alkenyl group having 2 to 10 C atoms, or a substituted or unsubstituted aromatic group having 6 to 60 ring atoms, or a substituted or unsubstituted heteroaromatic group having 5 to 30 ring atoms, or a substituted or unsubstituted aryloxy group having 6 to 30 ring atoms, or a substituted or unsubstituted heteroaryloxy group having 5 to 30 ring atoms, or a combination of these groups.

[0093] Further, in some embodiments, R 2 , R 4 , R 5 Each occurrence is independently selected from H, or a straight-chain alkyl group having 1 to 10 C atoms, or a straight-chain alkoxy group having 1 to 10 C atoms, or a straight-chain thioalkoxy group having 1 to 10 C atoms, or a branched-chain alkyl group having 3 to 10 C atoms, or a branched-chain alkoxy group having 3 to 10 C atoms, or a branched-chain thioalkoxy group having 3 to 10 C atoms, -CF 3 , -Cl, -Br, -F, -I, or an alkenyl group having 2 to 10 C atoms, or a combination of these groups.

[0094] Further, in some embodiments, R 2 , R 4 , R 5 Each occurrence is independently selected from H, or a straight-chain alkyl group having 1 to 5 C atoms, or a branched-chain alkyl group having 3 to 8 C atoms, or an alkenyl group having 2 to 5 C atoms, or a combination of these groups.

[0095] Further, in some embodiments, R 2 , R 4 , R 5 Each occurrence is independently selected from H.

[0096] As an example, the anthracene compounds may include, but are not limited to, one or more of 9-vinylanthracene, 9-ethynylanthracene, 9-(2-styryl)anthracene, 2-pentylanthraquinone, 9,10-dibutoxyanthracene.

[0097] The carbon-carbon double bond or carbon-carbon triple bond in the anthracene compound can be expanded to form a covalent bond with the silicon quantum dots, thereby generating strongly coupled triplet excitons (triplet excitons refer to excitons in which the spins of electrons and holes are the same, so that their wave functions in space are mutually enhanced). The triplet excitons can form a strongly coupled hybrid due to their spatial delocalization in the structure. This enhanced coupling system forms the energy and spatial distribution of the spin triplet excitons. Thus, after coupling the silicon quantum dots with the anthracene compounds, the red light, green light, and long-wavelength blue light entering them can be converted into short-wavelength blue light. Thus, a light-emitting device 100 that can emit short-wavelength blue light with a longer lifetime can be obtained.

[0098] In addition, the anthracene compound has a carbon-carbon double bond or a carbon-carbon triple bond, and the carbon-carbon double bond and the carbon-carbon triple bond can form a specific π-conjugated system with the anthracene molecule. Thus, on the one hand, the π-conjugated system can absorb light of a specific wavelength and generate electron transitions, and has good light conversion performance and optoelectronic performance; on the other hand, the π-conjugated system can form a conduction path and has good electrical conductivity.

[0099] In some embodiments, in the light conversion material, the molar ratio of the silicon quantum dots to the anthracene compound is 1:(5-20), for example, 1:5, 1:8, 1:10, 1:12, 1:15, 1:16, 1:18, 1:20, etc. Within the range of the molar ratio, the energy of strongly coupled triplet excitons can be effectively adjusted, so that the light conversion material can effectively convert red light, green light, and long-wavelength blue light into short-wavelength blue light, which is beneficial to obtaining a short-wavelength blue light emitting device 100 with good luminescence performance and long lifespan.

[0100] In some embodiments, the average particle size of the silicon quantum dots is 3.5-5 nm. Within this range, the light conversion material can effectively convert red light, green light, and long-wavelength blue light into short-wavelength blue light, which is beneficial to obtaining a short-wavelength blue light emitting device 100 with good luminescence performance and long lifespan.

[0101] The aromatic compound with an electron-withdrawing group includes but is not limited to one or more of F4-TCNQ (2,3,5,6-tetrafluoro-7,7',8,8'-tetracyano-p-benzoquinodimethane), F6-TCNNQ (1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane), PCBM ([6,6]-phenyl-C61-butyric acid methyl ester), TCNQ (7,7,8,8-tetracyanoquinodimethane), C60 (carbon 60). The aromatic compound with an electron-withdrawing group has a good doping effect and can be doped well in the light conversion material, so that the light conversion material has a good film-forming effect, which is beneficial to enabling the light conversion layer 30 to have good light conversion ability and high hole transport ability.

[0102] In the light conversion layer 30, the molar ratio of the light conversion material to the electron-withdrawing material is (50-100):1, for example, 50:1, 55:1, 60:1, 65:1, 70:1, 75:1, 80:1, 85:1, 90:1, 95:1, 99:1, 100:1, etc. Within this ratio range, it can not only effectively convert the red light, green light, and long-wavelength blue light entering it into short-wavelength blue light, but also improve the hole transport ability of the light conversion layer 30.

[0103] In this application, by providing the light conversion layer 30 between the light-emitting layer 20 and the anode 40 of the light-emitting device 100, and the light conversion layer 30 includes the light conversion material and the electron-withdrawing material. On the one hand, the light conversion material can effectively convert the incident red light, green light, and long-wavelength blue light into short-wavelength blue light, thereby obtaining a light-emitting device 100 that can emit short-wavelength (below 470 nm) blue light and has a longer lifespan, thus greatly enhancing the practical application prospects and commercial value of the short-wavelength blue light-emitting device. On the other hand, due to the low hole-transporting ability of the light conversion material, adding the electron-withdrawing material in the light conversion layer can effectively improve the hole injection efficiency of the light-emitting device 100, thereby enhancing the charge balance in the light-emitting layer 20 of the light-emitting device 100, and further enhancing the light-emitting efficiency and lifespan of the light-emitting device 100. On yet another hand, the electron-withdrawing material can timely absorb the excess electrons in the light conversion layer, reducing or even avoiding the influence of electrons on the light conversion material, and further enhancing the stability of the light conversion layer 30.

[0104] Please refer to Figure 2 , in some embodiments, the light-emitting device 100 further includes an electron transport layer 50, and the electron transport layer 50 is located between the cathode 10 and the light-emitting layer 20.

[0105] Please refer to Figure 3 and Figure 4 , in some embodiments, the light-emitting device 100 further includes a hole transport layer 60, and the hole transport layer 60 is located between the light-emitting layer 20 and the light conversion layer 30, or the hole transport layer 60 is located between the light conversion layer 30 and the anode 40.

[0106] Please refer to Figure 5 , Figure 6 and Figure 7 , in some embodiments, the light-emitting device 100 further includes a hole injection layer 70, and the hole injection layer 70 is located between the hole transport layer 60 and the light conversion layer 30, or the hole injection layer 70 is located between the light conversion layer 30 and the anode 40, or the hole injection layer 70 is located between the hole transport layer 60 and the anode 40.

[0107] In at least one embodiment, the hole transport layer 60 is located between the light conversion layer 30 and the anode 40. In this way, the light conversion layer 30 is in direct contact with the light-emitting layer 20, which can enable the light-emitting device 100 to have a better light-emitting effect and a longer lifespan.

[0108] The cathode 10 and the anode 40 are an anode and a cathode known in the art for light-emitting devices. For example, they may independently include, but are not limited to, doped metal oxide electrodes, composite electrodes, graphene electrodes, carbon nanotube electrodes, elemental metal electrodes, or alloy electrodes. The materials of the doped metal oxide electrodes may include, but are not limited to, one or more of indium-doped tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony-doped tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO), magnesium-doped zinc oxide (MZO), aluminum-doped magnesium oxide (AMO), and cadmium-doped zinc oxide. The composite electrode is an electrode formed by laminating two or more layers of conductive materials, such as AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO 2 / Ag / TiO 2 、TiO 2 / Al / TiO 2 、ZnS / Ag / ZnS、ZnS / Al / ZnS、Ca / Al、LiF / Ca、LiF / Al、BaF 2 / Al、CsF / Al、CaCO 3 / Al、BaF 2 / Ca / Al, etc., where " / " represents a laminated structure. For example, AZO / Ag / AZO represents a composite electrode including an AZO layer, an Ag layer, and an AZO layer laminated in sequence. The materials of the elemental metal electrodes may include, but are not limited to, one or more of Ag, Ni, Pt, Au, Ir, Cu, Mo, Al, Ca, Mg, and Ba. The alloy electrodes include, but are not limited to, Au:Mg alloy electrodes and Ag:Mg alloy electrodes.

[0109] In some embodiments, the anode is an electrode with a relatively high work function. For example, it may include, but is not limited to, a doped metal oxide electrode with a relatively high work function, an elemental metal electrode with a relatively high work function, and a carbon nanotube electrode. The elemental metal electrode with a relatively high work function may be selected from, but is not limited to, Ni, Pt, Au, Ag, Ir, etc.

[0110] In some embodiments, the cathode is an electrode with a relatively low work function. For example, it may include, but is not limited to, an elemental metal electrode with a relatively low work function, a composite electrode with a relatively low work function, and an alloy electrode with a relatively low work function. The elemental metal electrode with a relatively low work function may be Ca, Ba, Al, Mg, etc. The composite electrode with a relatively low work function may be Ca / Al, LiF / Ca, LiF / Al, BaF 2 / Al、CsF / Al、CaCO 3 / Al, BaF 2 / Ca / Al, etc. Alloy electrodes with relatively low work functions such as Au:Mg and Ag:Mg, etc.

[0111] The material of the light-emitting layer 20 may include, but is not limited to, one or more of organic light-emitting materials and quantum dot light-emitting materials.

[0112] The organic light-emitting materials may include, but are not limited to, CBP:Ir(mppy) 3 (4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridine iridium(III)), TCTX:Ir(mmpy) (4,4',4”-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridine iridium), diaryl anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescence materials, TTA materials, TADF (thermally activated delayed) materials, polymers containing B-N covalent bonds, HLCT (hybrid local charge transfer excited state) materials, Exciplex (excimer complex) light-emitting materials, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives, etc.

[0113] The quantum dot light-emitting materials may include, but are not limited to, one or more of single-structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials.

[0114] The materials of the single-structure quantum dots, the core materials of the core-shell structure quantum dots, and the shell materials of the core-shell structure quantum dots may respectively include, but are not limited to, one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. The shell of the core-shell structure quantum dots includes one or more layers. The II-VI group compounds may include, but are not limited to, one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds may include, but are not limited to, one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compounds may include, but are not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI group compounds may include, but are not limited to, one or more of CuInS 2 , CuInSe 2 , and AgInS 2 .

[0115] As an example, the quantum dots of the core-shell structure may include, but are not limited to, one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS.

[0116] The perovskite semiconductor material may include, but is not limited to, doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors. The general structural formula of the inorganic perovskite semiconductor is AMX 3 , where A is a Cs + ion, M is a divalent metal cation, including Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ , Eu 2+ or more of them, and X is a halogen anion, including Cl - , Br - , I - or more of them. The general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX 3 , where B is an organic amine cation, including CH 3 (CH 2 ) n-2 NH 3 + or [NH 3 (CH 2 ) n NH 3 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ , Eu 2+ ​One or more of them, X is a halogen anion, including Cl - , Br - , I - One or more of them.

[0117] The material of the hole transport layer 60 can be a material known in the art for hole transport layers. For example, it can be selected from but not limited to 4,4'-N,N'-dicarbazolyl-biphenyl (CBP), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine (α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), poly(N,N' bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine) (Poly-TPD), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro(spiro-TPD), N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine (DNTPD), 4,4',4'-tris(N-carbazolyl)-triphenylamine (TCTA), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))] (TFB), poly(N-vinylcarbazole) (PVK) and its derivatives, N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine (NPB), spiro NPB, poly(phenylenevinylene) (PPV), poly[2-methoxy-5-(2-ethylhexoxy)-1,4-phenylenevinylene] (MEH-PPV), poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MOMO-PPV), 2,2',7,7'-tetra[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene (spiro-omeTAD), 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline] (TAPC), 1,3-bis(carbazol-9-yl)benzene (MCP), polyaniline, polypyrrole, poly(p)-phenylenevinylene, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO 3 , doped or undoped WO3 , doped or undoped V 2 O 5 , doped or undoped p-type gallium nitride, doped or undoped CrO 3 , one or more of doped or undoped CuO.

[0118] The material of the electron transport layer 50 is a material known in the art for use in an electron transport layer, and can be selected from, for example, but not limited to, one or more of inorganic electron transport materials and organic electron transport materials. The inorganic electron transport materials include, but are not limited to, one or more of metal oxides, doped metal oxides, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. Specifically, the metal oxide is selected from, but not limited to, one or more of ZnO, TiO 2 , SnO 2 , ZrO 2 , Ta 2 O 5 ; the metal oxide in the doped metal oxide is selected from, but not limited to, one or more of ZnO, TiO 2 , SnO 2 , ZrO 2 , Ta 2 O 5 , Al 2 O 3 ; the dopant in the doped metal oxide is selected from, but not limited to, one or several of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, Sn. By way of example, the doped metal oxide can be aluminum-doped zinc oxide (AZO), lithium-doped zinc oxide (LZO), magnesium-doped zinc oxide (MZO), tin-doped zinc oxide, etc.; the IIB-VIA group semiconductor material is selected from, but not limited to, one or more of ZnS, ZnSe, CdS; the IIIA-VA group semiconductor material is selected from, but not limited to, one or more of InP, GaP; the IB-IIIA-VIA group semiconductor material is selected from, but not limited to, one or more of CuInS, CuGaS. The organic electron transport materials include, but are not limited to, one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, and hydroxyquinoline compounds.

[0119] The material of the hole injection layer 70 can be a material known in the art for use in a hole injection layer, and can be selected from, for example, but not limited to 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (HAT-CN), PEDOT, PEDOT:PSS, PEDOT:PSS doped with s-MoO 3Derivatives of (PEDOT:PSS:s-MoO 3 ), 4,4',4'-tris(N-(3-methylphenyl)-N-phenylamino)triphenylamine (m-MTDATA), tetracyanoquinodimethane (F4-TCQN), copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide, and copper oxide, or one or more of them.

[0120] In some embodiments, the thickness of the cathode is 95 - 105 nm.

[0121] In some embodiments, the thickness of the anode is 75 - 85 nm.

[0122] In some embodiments, the thickness of the light-emitting layer is 35 - 45 nm.

[0123] In some embodiments, the thickness of the light conversion layer is 15 - 25 nm.

[0124] In some embodiments, the thickness of the electron transport layer is 35 - 45 nm.

[0125] In some embodiments, the thickness of the hole transport layer is 20 - 30 nm.

[0126] In some embodiments, the thickness of the hole injection layer is 20 - 30 nm.

[0127] It can be understood that the light-emitting device 100 can also be provided with some conventional functional layers for light-emitting devices that are helpful for improving the performance of the light-emitting device, such as an electron blocking layer, a hole blocking layer, an electron injection layer, an interface modification layer, etc.

[0128] It can be understood that the materials of each layer of the light-emitting device 100 can be adjusted according to the light-emitting requirements of the light-emitting device 100.

[0129] In some embodiments, the light-emitting device 100 further includes a substrate, and the substrate is disposed on a side of the cathode 10 away from the light-emitting layer 20, or the substrate is disposed on a side of the anode 40 away from the light-emitting layer 20.

[0130] The substrate can be a rigid substrate or a flexible substrate. In some embodiments, the materials of the substrate can include, but are not limited to, one or more of glass, silicon wafer, polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyamide, and polyethersulfone.

[0131] It can be understood that the light-emitting device 100 can be a normal light-emitting device or an inverted light-emitting device. The light-emitting device 100 can be a quantum dot light-emitting device or an organic light-emitting device.

[0132] Second aspect, please refer to Figure 8 , the embodiment of the present application further provides a method for manufacturing a light-emitting device, including the following steps:

[0133] Step S11: Provide a light-emitting device preform, the light-emitting device preform includes a cathode 10 and a light-emitting layer 20;

[0134] Step S12: Provide the above-mentioned light conversion material and electron-withdrawing material, mix them to obtain a mixed material, and dispose the mixed material on the light-emitting layer 20 to obtain a light conversion layer 30;

[0135] Step S13: Fabricate an anode 40 on the light conversion layer 30 to obtain a light-emitting device 100.

[0136] Please refer to Figures 2 - 7 , in some embodiments, the light-emitting device preform further includes an electron transport layer 50 located between the cathode 10 and the light-emitting layer 20.

[0137] Please refer to Figure 3 , in some embodiments, the light-emitting device preform further includes a hole transport layer 60 laminated on the surface of the light-emitting layer 20 away from the cathode 10. Further, please refer to Figure 6 , in some embodiments, step S13 includes: sequentially fabricating a hole injection layer 70 and an anode 40 laminated on the light conversion layer 30.

[0138] Please refer to Figure 4 , in some embodiments, step S13 includes: sequentially fabricating a hole transport layer 60 and an anode 40 on the light conversion layer 30.

[0139] Please refer to Figure 5 , in some embodiments, the light-emitting device preform further includes a hole injection layer 70 and a hole transport layer 60 sequentially laminated on the surface of the light-emitting layer 20 away from the cathode 10.

[0140] Please refer to Figure 7 , in some embodiments, step S13 includes: sequentially fabricating a hole transport layer 60, a hole injection layer 70 and an anode 40 on the light conversion layer 30.

[0141] Please refer to Figure 9 , the embodiment of the present application further provides another method for manufacturing a light-emitting device, including the following steps:

[0142] Step S21: Provide a light-emitting device preform, the light-emitting device preform includes an anode 40;

[0143] Step S22: Provide the above-mentioned light conversion material and electron-withdrawing material, mix them to obtain a mixed material, and dispose the mixed material on the light-emitting device preform to obtain the light conversion layer 30;

[0144] Step S23: Sequentially prepare a stacked light-emitting layer 20 and a cathode 10 on the light conversion layer 30 to obtain the light-emitting device 100.

[0145] Please refer to Figure 4 , in some embodiments, the light-emitting device preform further includes a hole transport layer 60 located on the anode 40. Correspondingly, in step S22, the light conversion material is disposed on the hole transport layer 60.

[0146] Please refer to Figure 5 , in some embodiments, step S23 includes: sequentially preparing a stacked hole injection layer 70, a hole transport layer 60, a light-emitting layer 20, and a cathode 10 on the light conversion layer 30 to obtain the light-emitting device 100.

[0147] Please refer to Figure 6 , in some embodiments, the light-emitting device preform further includes a hole injection layer 70 stacked on the anode 40. Correspondingly, in step S22, the light conversion material is disposed on the hole injection layer 70, and step S23 includes: sequentially preparing a stacked hole transport layer 60, a light-emitting layer 20, and a cathode 10 on the light conversion layer 30 to obtain the light-emitting device 100.

[0148] Please refer to Figure 7 , in some embodiments, the light-emitting device preform further includes a hole injection layer 70 and a hole transport layer 60 sequentially stacked on the anode 40. Correspondingly, in step S22, the light conversion material is disposed on the hole transport layer 60.

[0149] Please refer to Figures 2 - 7 , in some embodiments, step S13 includes: sequentially preparing a stacked electron transport layer 50 and an anode 40 on the light conversion layer 30.

[0150] In some embodiments, the preparation method of the light conversion material includes:

[0151] Step S31: Provide a silicon quantum dot solution, which includes silicon quantum dots;

[0152] Step S32: Add the above-mentioned anthracene compound and a radical initiator to the silicon quantum dot solution, and heat it to enable the carbon-carbon double bond or carbon-carbon triple bond in the anthracene compound to unfold and form a covalent bond with the silicon quantum dots, so that the silicon quantum dots are coupled with the anthracene compound to obtain the light conversion material.

[0153] In step S31:

[0154] The surface of the silicon quantum dots is connected with ligands, and the ligands can enable the silicon quantum dots to have good dispersion performance in the solution.

[0155] The ligands include but are not limited to at least one of alkyl ligands, acid ligands, thiol ligands, amine ligands, phosphine ligands, phosphine oxide ligands, phospholipids, lecithins, and polyvinylpyridines. As an example, the alkyl ligands include alkyl ligands with 2 to 14 carbon atoms; the acid ligands include at least one of decanoic acid, undecylenic acid, myristic acid, oleic acid, and stearic acid; the thiol ligands include at least one of octyl mercaptan, dodecyl mercaptan, and octadecyl mercaptan; the amine ligands include at least one of oleylamine, octadecylamine, and octylamine; the phosphine ligand includes trioctylphosphine; the phosphine oxide ligand includes trioctylphosphine oxide.

[0156] In some embodiments, taking the silicon quantum dots with dodecyl ligands connected to the surface as an example, the preparation method of the silicon quantum dot solution includes:

[0157] The silicon quantum dots nucleate and then grow in a low-temperature plasma using silane gas as a precursor to obtain silicon quantum dots;

[0158] In the plasma afterglow, olefins and hydrogen are introduced, and the olefins and hydrogen react on the surface of the silicon quantum dots to form alkyl chains and graft them onto the silicon quantum dots to obtain silicon quantum dots with alkyl ligands connected to the surface;

[0159] The silicon quantum dots with alkyl ligands connected to the surface are dissolved in a first solvent to obtain an intermediate solution;

[0160] The intermediate solution is diluted with a diluent to obtain a silicon quantum dot solution.

[0161] The plasma in the plasma afterglow may include but is not limited to one or more of N 2 plasma, Ar plasma, He plasma, Kr plasma, Xe plasma, and Ne plasma.

[0162] The olefins may include but are not limited to one or more of olefins with 2 to 14 carbon atoms.

[0163] The first solvent includes but is not limited to one or more of toluene, m-xylene, p-xylene, and mesitylene.

[0164] The diluent includes but is not limited to one or more of toluene, m-xylene, p-xylene, and mesitylene.

[0165] In the intermediate solution, the concentration range of the intermediate is 4 to 8 mmol / ml.

[0166] The volume ratio of the diluent to the first solvent is (2 to 4):1.

[0167] Within the concentration range of the intermediate solution and within the range of the volume ratio of the diluent to the first solvent, it is beneficial to obtain a quantum dot composite solution with good dispersibility.

[0168] In step S32:

[0169] The anthracene compound is as described above and will not be elaborated here.

[0170] The radical initiator includes but is not limited to one or more of azobisisobutyronitrile (AIBN), benzoyl peroxide (BPO), and dicumyl peroxide (IPPD).

[0171] The molar ratio range of the anthracene compound to the silicon quantum dots is (5 to 10):1.

[0172] The molar ratio range of the radical initiator to the silicon quantum dots is 1:(50 to 100).

[0173] The temperature of the heating is 50 to 80 °C and the time is 15 to 30 h. Within the range of the temperature and time, it is beneficial for the coupling reaction to occur between the anthracene compound and the silicon quantum dots.

[0174] The methods for forming the anode 40, the light-emitting layer 20, the electron transport layer 50, the hole transport layer 60, and the hole injection layer 70, and the method for disposing the light conversion material on the light-emitting device preform can be achieved by conventional techniques in the art, such as chemical methods or physical methods. Among them, chemical methods include chemical vapor deposition, sequential ionic layer adsorption and reaction, anodic oxidation, electrolytic deposition, and coprecipitation. Physical methods include physical coating methods and solution methods. Among them, physical coating methods include: thermal evaporation coating, electron beam evaporation coating, magnetron sputtering, multi-arc ion coating, physical vapor deposition, atomic layer deposition, pulsed laser deposition, etc.; solution methods can be spin coating, printing, inkjet printing, blade coating, printing, dip coating, immersion, spraying, roll coating, casting, slot die coating, and bar coating, etc.

[0175] In a third aspect, the present application further relates to a display device, and the display device includes the light-emitting device 100.

[0176] The display device can be any electronic product with a display function. The electronic product includes but is not limited to a smart phone, a tablet computer, a notebook computer, a digital camera, a digital video camera, a smart wearable device, a smart weighing electronic scale, an in-vehicle display, a television, or an e-book reader. Among them, the smart wearable device can be, for example, a smart bracelet, a smart watch, a virtual reality (VR) helmet, etc.

[0177] The present application will be specifically described below through specific embodiments. The following embodiments are only partial embodiments of the present application and do not limit the present application. The raw materials used in the following embodiments are all commercially available products unless otherwise specified.

[0178] Example 1

[0179] Provide an ITO anode 40 with a thickness of 80 nm;

[0180] Spin-coat PEDOT:PSS material on the anode 40 and anneal at 150 °C for 20 min to obtain a hole injection layer 70 with a thickness of 25 m;

[0181] Spin-coat TFB material on the hole injection layer 70 and anneal at 200 °C for 30 min to obtain a hole transport layer 60 with a thickness of 25 nm;

[0182] Silicon quantum dots nucleate and grow in a low-temperature plasma using silane gas as a precursor to obtain silicon quantum dots. Hydrogen saturated with 1-dodecene vapor is introduced in the plasma afterglow to graft alkyl chains onto the quantum dots to obtain silicon quantum dots grafted with dodecyl groups on the surface; dissolve 40 mmol of silicon quantum dots grafted with dodecyl groups on the surface in 10 ml of toluene to obtain a first intermediate solution; dilute the first intermediate solution with 30 ml of mesitylene to obtain a second intermediate solution; add 0.53 mmol of AIBN and 300 mmol of 9-vinylanthracene to the second intermediate solution and heat at 60 °C for 15 h to connect 9-vinylanthracene to the surface of the silicon quantum dots, precipitate with methanol to obtain a light conversion material, dissolve 75 mmol of the light conversion material and 1 mmol of F4-TCNQ in 1 ml of toluene to obtain a dispersion, spin-coat the dispersion on the hole transport layer 60, and anneal at 80 °C for 5 min to obtain a light conversion layer 30;

[0183] Deposit red quantum dot CdSe on the light conversion layer 30 to obtain a light-emitting layer 20;

[0184] Spin-coat an ethanol solution of ZnO on the light-emitting layer 20 to obtain an electron transport layer 50 with a thickness of 40 nm;

[0185] Deposit Ag on the electron transport layer 50 to obtain a cathode 10 with a thickness of 100 nm;

[0186] Encapsulate to obtain a light-emitting device 100.

[0187] Example 2

[0188] This example is basically the same as Example 1, except that in this example, 9-ethynylanthracene is used to replace 9-vinylanthracene in Example 1.

[0189] Example 3

[0190] This example is basically the same as Example 1, except that in this example, 9-(2-styryl)anthracene is used to replace 9-vinylanthracene in Example 1.

[0191] Example 4

[0192] This example is basically the same as Example 1, except that in this example, the dosage of 9-vinylanthracene is 200 mmol.

[0193] Example 5

[0194] This example is basically the same as Example 1, except that in this example, the dosage of 9-vinylanthracene is 400 mmol.

[0195] Example 6

[0196] This example is basically the same as Example 1, except that in this example, F6-TCNNQ is used to replace F4-TCNQ in Example 1.

[0197] Example 7

[0198] This example is basically the same as Example 1, except that in this example, PCBM is used to replace F4-TCNQ in Example 1.

[0199] Example 8

[0200] This example is basically the same as Example 1, except that in this example, C60 is used to replace F4-TCNQ in Example 1.

[0201] Example 9

[0202] This example is basically the same as Example 1, except that in this example, TCNQ and PCBM are used to replace F4-TCNQ in Example 1, and the molar ratio of TCNQ and PCBM is 1:1.

[0203] Example 10

[0204] The embodiment is basically the same as Embodiment 1, except that in this embodiment, the dosage of F4-TCNQ is 50 mmol / ml.

[0205] Embodiment 11

[0206] The embodiment is basically the same as Embodiment 1, except that in this embodiment, the dosage of F4-TCNQ is 100 mmol / ml.

[0207] Embodiment 12

[0208] The embodiment is basically the same as Embodiment 1, except that in this embodiment, the green quantum dot CdZnS is used to replace the red quantum dot CdSe in Embodiment 1.

[0209] Embodiment 13

[0210] The embodiment is basically the same as Embodiment 1, except that in this embodiment, the blue quantum dot CdZnSe with a luminous wavelength of 475 nm is used to replace the red quantum dot CdSe in Embodiment 1.

[0211] Embodiment 14

[0212] The embodiment is basically the same as Embodiment 1, except that in this embodiment, the light conversion layer 30 is located between the hole injection layer 70 and the hole transport layer 60.

[0213] Embodiment 15

[0214] The embodiment is basically the same as Embodiment 1, except that in this embodiment, the light conversion layer 30 is located between the anode 40 and the hole injection layer 70.

[0215] Embodiment 16

[0216] Provide an Ag cathode 10 with a thickness of 100 nm;

[0217] Spin-coat an ethanol solution of ZnO on the cathode 10 to obtain an electron transport layer 50 with a thickness of 40 nm;

[0218] Deposit the red quantum dot CdSe on the electron transport layer 50 to obtain a light-emitting layer 20;

[0219] Silicon quantum dots nucleate and grow in a low-temperature plasma using silane gas as a precursor to obtain silicon quantum dots. Hydrogen saturated with 1-dodecene vapor is introduced in the plasma afterglow to graft alkyl chains onto the quantum dots, resulting in silicon quantum dots with dodecyl groups grafted on the surface. 40 mmol of the silicon quantum dots with dodecyl groups grafted on the surface are dissolved in 10 ml of toluene to obtain a first intermediate solution. The first intermediate solution is diluted with 30 ml of mesitylene to obtain a second intermediate solution. 0.53 mmol of AIBN and 300 mmol of 9-vinylanthracene are added to the second intermediate solution, and it is heated at 60 °C for 15 h to connect 9-vinylanthracene to the surface of the silicon quantum dots. Precipitation is carried out using methanol to obtain a light-converting material. 75 mmol of the light-converting material and 1 mmol of F4-TCNQ are dissolved in toluene to obtain a dispersion. The dispersion is spin-coated on the light-emitting layer 20 and annealed at 80 °C for 5 min to obtain a light-converting layer 30;

[0220] TFB material is spin-coated on the light-converting layer 30 and annealed at 200 °C for 30 min to obtain a hole-transporting layer 60 with a thickness of 25 nm;

[0221] PEDOT:PSS material is spin-coated on the hole-transporting layer 60 and annealed at 150 °C for 20 min to obtain a hole-injecting layer 70 with a thickness of 25 m;

[0222] ITO is evaporated on the hole-injecting layer 70 to obtain an ITO anode 40 with a thickness of 80 nm.

[0223] Comparative Example 1

[0224] This comparative example is basically the same as Example 1, except that the preparation of the light-converting layer 30 is not included in this comparative example.

[0225] Comparative Example 2

[0226] This comparative example is basically the same as Example 1, except that the electron-withdrawing material F4-TCNQ is not added to the light-converting layer 30 in this comparative example.

[0227] Comparative Example 3

[0228] This comparative example is basically the same as Example 1, except that the light-converting layer 30 in Example 1 is replaced with an F4-TCNQ electron-withdrawing layer in this comparative example.

[0229] Comparative Example 4

[0230] This comparative example is basically the same as Example 12, except that the preparation of the light-converting layer 30 is not included in this comparative example.

[0231] Comparative Example 5

[0232] This comparative example is basically the same as Example 12, except that the electron-withdrawing material F4-TCNQ is not added to the light conversion layer 30 in this comparative example.

[0233] Comparative Example 6

[0234] This comparative example is basically the same as Example 12, except that the light conversion layer 30 in this comparative example is replaced with an F4-TCNQ electron-withdrawing layer in Example 1.

[0235] Comparative Example 7

[0236] This comparative example is basically the same as Example 13, except that this comparative example does not include the preparation of the light conversion layer 30.

[0237] Comparative Example 8

[0238] This comparative example is basically the same as Example 13, except that the electron-withdrawing material F4-TCNQ is not added to the light conversion layer 30 in this comparative example.

[0239] Comparative Example 9

[0240] This comparative example is basically the same as Example 13, except that the light conversion layer 30 in this comparative example is replaced with an F4-TCNQ electron-withdrawing layer in Example 1.

[0241] The light conversion ability, the stability of the light conversion layer, the lifetime T95, the lifetime T95@1000nit, the maximum brightness Lmax, and the external quantum efficiency EQE of the light-emitting devices of Examples 1 to 16 and Comparative Examples 1 to 9 were detected, and the detection results are shown in Table 1.

[0242] The light conversion ability refers to the difference between the wavelength of the quantum dots in the light-emitting layer and the wavelength of the light emitted by the light-emitting device, which is monitored using an integrating sphere.

[0243] Test for the stability of the light conversion layer: The time required for the conductivity to decrease to 95% of the initial conductivity. The longer the required time, the better the stability.

[0244] The test methods for the lifetime T95 and the lifetime T95@1000nit are as follows: The time required for the brightness of the device to decrease to a certain proportion of the maximum brightness when driven by a constant current of 2 mA. The time when the brightness drops to 95% of the maximum brightness is defined as T95, and this lifetime is the measured lifetime. To shorten the test cycle, the device lifetime test is usually carried out by accelerating the device aging at high brightness and fitting the lifetime at high brightness through an extended exponential decay brightness decay fitting formula. For example, the lifetime at 1000 nit is denoted as T95@1000nit. The specific calculation formula is as follows:

[0245]

[0246] Among them, T95 L is the lifetime at low brightness, and T95 H is the measured lifetime at high brightness. L H is the device accelerated to the highest brightness. L L is 1000 nit. A is the acceleration factor. In this experiment, the value of A is obtained as 1.7 by measuring the lifetimes of several groups of green QLED devices at the rated brightness.

[0247] The maximum brightness is measured using a luminance meter PR650. Among them, the driving current is a constant current of 2 mA.

[0248] The test method for the external quantum efficiency EQE is as follows: the ratio of the number of electron-hole pairs injected into the quantum dots converted into the number of emitted photons, with the unit of %, is an important parameter to measure the quality of electroluminescent devices and can be obtained by measuring with an EQE optical test instrument. The specific calculation formula is as follows:

[0249]

[0250] Among them, ηe is the light output coupling efficiency, ηr is the ratio of the number of recombined carriers to the number of injected carriers, χ is the ratio of the number of excitons generating photons to the total number of excitons, and K R is the radiation process rate, and K NR is the non-radiation process rate.

[0251] The environmental conditions for the above tests are as follows: carried out at room temperature, and the air humidity is 30 - 60%.

[0252] Table 1:

[0253]

[0254]

[0255] It can be seen from Table 1 that:

[0256] Compared with the light-emitting devices of Comparative Example 2, the light-emitting devices of Examples 1 - 11, 14 - 16 have a stronger light conversion ability to convert red light into blue light with a longer wavelength. The reason may be that an electron-withdrawing material is added to the light conversion layer of the light-emitting devices of Examples 1 - 11, 14 - 16. Under the action of the electron-withdrawing material, the light conversion material has a higher light conversion ability;

[0257] Compared with the light-emitting devices of Comparative Example 5, the light-emitting devices of Example 12 have a stronger light conversion ability to convert green light into blue light with a longer wavelength. The reason may be that an electron-withdrawing material is added to the light conversion layer of the light-emitting devices of Example 12. Under the action of the electron-withdrawing material, the light conversion material has a higher light conversion ability;

[0258] Compared with the light-emitting device of Comparative Example 8, the light-emitting device of Example 13 has a stronger light conversion ability to convert green light into blue light with a longer wavelength. The reason may be that an electron-withdrawing material is added to the light conversion layer of the light-emitting device of Example 13. Under the action of the electron-withdrawing material, the light conversion material has a higher light conversion ability;

[0259] Compared with the light-emitting device of Comparative Example 2, the time required for the conductivity of the light conversion layer of the light-emitting devices of Examples 1 to 11 and 14 to 16 to decrease to 95% of the initial conductivity is longer. It can be seen that the light conversion layers of the light-emitting devices of Examples 1 to 11 and 14 to 16 have higher stability. The reason may be that an electron-withdrawing material is added to the light conversion layer of the light-emitting devices of Examples 1 to 11 and 14 to 16. The electron-withdrawing material can timely absorb the excess electrons in the light conversion layer, reduce or even avoid the influence of electrons on the light conversion material, and thus improve the stability of the light conversion layer;

[0260] Compared with the light-emitting device of Comparative Example 5, the time required for the conductivity of the light conversion layer of the light-emitting device of Example 12 to decrease to 95% of the initial conductivity is longer. It can be seen that the light conversion layer of the light-emitting device of Example 12 has higher stability. The reason may be that an electron-withdrawing material is added to the light conversion layer of the light-emitting device of Example 12. The electron-withdrawing material can timely absorb the excess electrons in the light conversion layer, reduce or even avoid the influence of electrons on the light conversion material, and thus improve the stability of the light conversion layer;

[0261] Compared with the light-emitting device of Comparative Example 8, the time required for the conductivity of the light conversion layer of the light-emitting device of Example 13 to decrease to 95% of the initial conductivity is longer. It can be seen that the light conversion layer of the light-emitting device of Example 13 has higher stability. The reason may be that an electron-withdrawing material is added to the light conversion layer of the light-emitting device of Example 13. The electron-withdrawing material can timely absorb the excess electrons in the light conversion layer, reduce or even avoid the influence of electrons on the light conversion material, and thus improve the stability of the light conversion layer;

[0262] Compared with the light-emitting devices of Comparative Examples 1 to 3 and Comparative Example 7, the blue light-emitting devices of Examples 1 to 11 and 14 to 16 have a longer lifespan, a higher maximum brightness, and a greater luminous efficiency. It can be seen that by providing the light conversion layer described in the present application in the light-emitting device, red light can be effectively converted into blue light and the lifespan, maximum brightness, and luminous efficiency of the light-emitting device can be effectively improved. The reason may be that the light conversion layer of the light-emitting device described in the present application includes both a light conversion material and an electron-withdrawing material, which can not only convert red light into blue light but also improve the hole transport ability;

[0263] Compared with the light-emitting devices of Comparative Examples 4-6 and Comparative Example 7, the blue light-emitting device of Example 12 has a longer lifespan, a higher maximum brightness, and a greater luminous efficiency. It can be seen that by providing the light conversion layer described in the present application in the light-emitting device, red light can be effectively converted into blue light, and the lifespan, maximum brightness, and luminous efficiency of the light-emitting device can be effectively improved. The reason may be that the light conversion layer of the light-emitting device described in the present application includes both a light conversion material and an electron-withdrawing material, which can not only convert red light into blue light but also improve the hole transport ability.

[0264] Compared with the light-emitting devices of Comparative Examples 7-9, the blue light-emitting device of Example 13 has a longer lifespan, a higher maximum brightness, and a greater luminous efficiency. It can be seen that by providing the light conversion layer described in the present application in the light-emitting device, red light can be effectively converted into blue light, and the lifespan, maximum brightness, and luminous efficiency of the light-emitting device can be effectively improved. The reason may be that the light conversion layer of the light-emitting device described in the present application includes both a light conversion material and an electron-withdrawing material, which can not only convert red light into blue light but also improve the hole transport ability.

[0265] The technical solutions provided in the embodiments of the present application have been introduced in detail above. Specific examples are used in this article to elaborate on the principles and implementation manners of the present application. The descriptions of the above embodiments are only used to help understand the method and its core idea of the present application. At the same time, for those skilled in the art, based on the idea of the present application, there will be changes in the specific implementation manners and application scopes. In summary, the content of this specification should not be construed as a limitation to the present application.

Claims

1. A light-emitting device comprising a cathode, a light-emitting layer, a light-conversion layer, and an anode stacked in sequence, characterized in that: The light conversion layer includes a light conversion material and an electron-withdrawing material, and the electron-withdrawing material includes an aromatic compound having an electron-withdrawing group.

2. The light emitting device according to claim 1, wherein: The light conversion layer is composed of the light conversion material and the electron-withdrawing material; and / or The light conversion material is formed by coupling silicon quantum dots and anthracene compounds.

3. The light emitting device according to claim 1, wherein: The aromatic compound having an electron-withdrawing group includes one or more of 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone, 1,3,4,5,7,8-hexafluorotetracyanonaphthoquinodimethane, [6,6]-phenyl C61 butyric acid methyl ester, 7,7,8,8-tetracyanoquinodimethane, and C60; and / or The light conversion material includes a coupled hybrid formed by coupling silicon quantum dots and anthracene compounds.

4. The light emitting device according to claim 2 or 3, wherein: The anthracene compound has the structural formula shown in the following formula (I): in, Each occurrence of L is independently selected from a single bond, unsubstituted or substituted with halogen, cyano, C1-C 20 Alkyl, C1-C 20 Alkoxy, C1-C 20 -(CH2) substituted by at least one of an alkylthio group, an aryl group having 6 to 60 ring atoms, an aryloxy group having 6 to 60 ring atoms, and an arylthio group having 6 to 60 ring atoms n1 -、-(CH2) n2 CH=CH(CH2) n3 -、-(CH2) n4 C≡C(CH2) n5 -、-(CH2) n6 O(CH2) n7 -、-(CH2) n8 (OCH2) n9 -、-(CH2) n10 CO(CH2) n11 -、-(CH2) n12 NHCO(CH2) n13 -、-(CH2) n14 CONH(CH2) n15 -、-(CH2) n16 OCO(CH2) n17 - and -(CH2) n18 COO(CH2) n19 - one or more combinations of, wherein n1 to n 19 are each independently selected from an integer of 1-20; Each occurrence of R1 is independently selected from C≡C or CR4=CR5; R2, R4, R5 are each independently selected from H, or straight-chain alkyl having 1 to 20 C atoms, or straight-chain alkoxy having 1 to 20 C atoms, or straight-chain thioalkoxy having 1 to 20 C atoms, or branched-chain alkyl having 3 to 20 C atoms, or branched-chain alkoxy having 3 to 20 C atoms, or branched-chain thioalkoxy having 3 to 20 C atoms, or cyclic alkyl having 3 to 20 C atoms, or cyclic alkoxy having 3 to 20 C atoms, or cyclic thioalkoxy having 3 to 20 C atoms, or silyl, or keto having 1 to 20 C atoms, or 2 to 20 C atoms an alkoxycarbonyl group having 7 to 20 carbon atoms, an alkoxycarbonyl group having 7 to 20 carbon atoms, a cyano group, a carbamoyl group, a haloformyl group, a formyl group, an isocyanate group, an isocyanate group, a thiocyanate group, an isothiocyanate group, a hydroxyl group, a nitro group, an amino group, -CF3, -Cl, -Br, -F, -I, or an alkene group having 2 to 20 carbon atoms, or a substituted or unsubstituted aromatic group having 6 to 60 ring atoms, or a substituted or unsubstituted heteroaromatic group having 5 to 60 ring atoms, or a substituted or unsubstituted aryloxy group having 6 to 60 ring atoms, or a substituted or unsubstituted heteroaryloxy group having 5 to 60 ring atoms, or a combination of these groups; n is any integer from 1 to 5.

5. The light emitting device according to claim 4, wherein: Each occurrence of L is independently selected from a single bond, unsubstituted or substituted with halogen, cyano, C1-C 10 Alkyl, C1-C 10 Alkoxy, C1-C 10 -(CH2) substituted by at least one of an alkylthio group, an aryl group having 6 to 30 ring atoms, an aryloxy group having 6 to 30 ring atoms, and an arylthio group having 6 to 30 ring atoms n1 -、-(CH2) n2 CH=CH(CH2) n3 -、-(CH2) n4 C≡C(CH2) n5 -、-(CH2) n6 O(CH2) n7 -、-(CH2) n8 (OCH2) n9 -、-(CH2) n10 CO(CH2) n11 -、-(CH2) n12 NHCO(CH2) n13 -、-(CH2) n14 CONH(CH2) n15 -、-(CH2) n16 OCO(CH2) n17 - and -(CH2) n18 COO(CH2) n19 - one or more combinations of, wherein n1 to n 19 are each independently selected from an integer of 1-10; and / or R2, R4, R5 are each independently selected from H, or straight-chain alkyl having 1 to 10 C atoms, or straight-chain alkoxy having 1 to 10 C atoms, or straight-chain thioalkoxy having 1 to 10 C atoms, or branched-chain alkyl having 3 to 10 C atoms, or branched-chain alkoxy having 3 to 10 C atoms, or branched-chain thioalkoxy having 3 to 10 C atoms, or cyclic alkyl having 3 to 10 C atoms, or cyclic alkoxy having 3 to 10 C atoms, or cyclic thioalkoxy having 3 to 10 C atoms, or silyl, or keto having 1 to 10 C atoms, or 2 to 10 C atoms The present invention further comprises an alkoxycarbonyl group having 7 to 10 carbon atoms, an alkoxycarbonyl group having 7 to 10 carbon atoms, a cyano group, a carbamoyl group, a haloformyl group, a formyl group, an isocyanate group, an isocyanate group, a thiocyanate group, an isothiocyanate group, a hydroxyl group, a nitro group, an amino group, -CF3, -Cl, -Br, -F, -I, or an alkene group having 2 to 10 carbon atoms, or a substituted or unsubstituted aromatic group having 6 to 60 ring atoms, or a substituted or unsubstituted heteroaromatic group having 5 to 30 ring atoms, or a substituted or unsubstituted aryloxy group having 6 to 30 ring atoms, or a substituted or unsubstituted heteroaryloxy group having 5 to 30 ring atoms, or a combination of these groups.

6. The light emitting device according to claim 4, wherein: Each occurrence of L is independently selected from a single bond, -(CH2) n1 - a combination of one or two of, wherein n1 is an integer selected from 1-5; and / or R2, R4, and R5 are each independently selected from H, or a straight-chain alkyl group having 1 to 10 C atoms, or a straight-chain alkoxy group having 1 to 10 C atoms, or a straight-chain thioalkoxy group having 1 to 10 C atoms, or a branched-chain alkyl group having 3 to 10 C atoms, or a branched-chain alkoxy group having 3 to 10 C atoms, or a branched-chain thioalkoxy group having 3 to 10 C atoms, -CF3, -Cl, -Br, -F, -I, or an alkene group having 2 to 10 C atoms, or a combination of these groups.

7. The light emitting device according to claim 4, wherein: Each occurrence of L is selected from a single bond; and / or Each occurrence of R2, R4, and R5 is independently selected from H, or a straight-chain alkyl group having 1 to 5 C atoms, or a branched-chain alkyl group having 3 to 8 C atoms, or an alkene group having 2 to 5 C atoms, or a combination of these groups.

8. The light emitting device according to claim 4, wherein: The anthracene compound includes one or more of 9-vinylanthracene, 9-ethynylanthracene, 9-(2-phenylvinyl)anthracene, 2-pentylanthraquinone, and 9,10-dibutoxyanthracene; and / or In the photoconversion material, the molar ratio of the silicon quantum dots to the anthracene compound is 1:(5-20); and / or The average particle size of the silicon quantum dots is 3.5 to 5 nm.

9. The light emitting device according to claim 1, wherein: The light emitting device further includes a hole transport layer, wherein the hole transport layer is located between the light emitting layer and the light conversion layer, or the hole transport layer is located between the light conversion layer and the anode.

10. The light emitting device according to claim 9, wherein: The light-emitting device further includes a hole injection layer, which is located between the hole transport layer and the light conversion layer, or between the light conversion layer and the anode, or between the hole transport layer and the anode.

11. The light emitting device according to claim 10, wherein: The cathode and the anode independently include a doped metal oxide electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a metal element electrode or an alloy electrode. The material of the doped metal oxide electrode includes one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, aluminum-doped magnesium oxide, and cadmium-doped zinc oxide. The composite electrode includes AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / Z nO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al or BaF2 / Ca / Al, the material of the metal element electrode includes one or more of Ag, Ni, Pt, Au, Ir, Cu, Mo, Al, Ca, Mg and Ba, and the alloy electrode includes an Au:Mg alloy electrode or an Ag:Mg alloy electrode; and / or The material of the hole injection layer includes one or more of 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, PEDOT, PEDOT:PSS, PEDOT:PSS doped with s-MoO3 derivatives, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane, copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide and copper oxide; and / or The materials of the hole transport layer include 4,4'-N,N'-dicarbazolyl-biphenyl, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N '-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(N-vinylcarbazole) and its derivatives, N,N'-di(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine, spiro NPB, poly(phenylene) phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene, 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline], 1,3-bis(carbazol-9-yl)benzene, polyaniline, polypyrrole, poly(p-)phenylene vinylene, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(4-methoxyphenyl)amino)-9,9'-spirobifluorene One or more of (p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and derivatives thereof, polymethacrylate and derivatives thereof, poly(9,9-octylfluorene) and derivatives thereof, poly(spirofluorene) and derivatives thereof, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO3, doped or undoped WO3, doped or undoped V2O5, doped or undoped P-type gallium nitride, doped or undoped CrO3, doped or undoped CuO; and / or The material of the light-emitting layer includes one or more of an organic light-emitting material and a quantum dot light-emitting material, and the organic light-emitting material includes one or more of 4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridine iridium, diarylanthracene derivatives, distyrene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescence materials, TTA materials, thermally activated delay materials, polymers containing covalent bonding of BN, hybrid localized charge transfer excited state materials, exciplex light-emitting materials, polyacetylene and its derivatives, poly-p-phenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives;The quantum dot luminescent material includes one or more of a single structure quantum dot, a core-shell structure quantum dot and a perovskite semiconductor material. The material of the single structure quantum dot, the core material of the core-shell structure quantum dot and the shell material of the core-shell structure quantum dot are independently selected from one or more of group II-VI compounds, group IV-VI compounds, group III-V compounds and group I-III-VI compounds. The shell of the core-shell structure quantum dot includes one or more layers. The group II-VI compound includes CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, One or more of ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the IV-VI group compounds include SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, Sn STe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, the III-V compound includes GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, One or more of GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb, the I-III-VI group compound comprises one or more of CuInS2, CuInSe2 and AgInS2; the perovskite semiconductor material comprises a doped or undoped inorganic perovskite semiconductor or an organic-inorganic hybrid perovskite semiconductor, and the general structural formula of the inorganic perovskite semiconductor is AMX3, wherein A is Cs; + ions, M is a divalent metal cation, including Pb 2+ 、Sn 2+ 、Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - , I - One or more of the following; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ 、Sn 2+ 、Cu 2+ 、Ni 2 + 、Cd 2+ Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - , I - One or more of; and / or The light emitting device further comprises an electron transport layer, which is located between the cathode and the light emitting layer. The material of the electron transport layer comprises one or more of an inorganic electron transport material and an organic electron transport material. The inorganic electron transport material comprises one or more of a metal oxide, a doped metal oxide, a IIB-VIA semiconductor material, a IIIA-VA semiconductor material and a IB-IIIA-VIA semiconductor material. The metal oxide comprises one or more of ZnO, TiO2, SnO2, ZrO2 and Ta2O5. The metal oxide in the doped metal oxide comprises ZnO, TiO2, SnO2, ZrO2, Ta2O5, Al 2O3, the dopant in the doped metal oxide includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, and Sn; the IIB-VIA semiconductor material includes one or more of ZnS, ZnSe, and CdS; the IIIA-VA semiconductor material includes one or more of InP and GaP; the IB-IIIA-VIA semiconductor material includes one or more of CuInS and CuGaS; the organic electron transport material includes one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, and hydroxyquinoline compounds; and / or The thickness of the cathode is 95 to 105 nm; and / or The thickness of the anode is 75 to 85 nm; and / or The thickness of the light-emitting layer is 35 to 45 nm; and / or The thickness of the light conversion layer is 15 to 25 nm; and / or The thickness of the electron transport layer is 35 to 45 nm; and / or The thickness of the hole transport layer is 20 to 30 nm; and / or The thickness of the hole injection layer is 20-30 nm.

12. A method for preparing a light-emitting device, characterized in that: The steps include: Providing a light-emitting device preform, wherein the light-emitting device preform includes a cathode and a light-emitting layer; Providing a mixed material of a light conversion material and an electron-absorbing material, and disposing the mixed material on the light-emitting layer to obtain a light conversion layer; preparing an anode on the light conversion layer to obtain a light-emitting device; or, Providing a light-emitting device preform, wherein the light-emitting device preform includes an anode; Providing a mixed material of a light conversion material and an electron-absorbing material, and disposing the mixed material on the light-emitting device preform to obtain a light conversion layer; A light-emitting layer and a cathode are sequentially stacked on the light conversion layer to obtain a light-emitting device.

13. The preparation method according to claim 12, wherein The preparation method of the light conversion material comprises: Providing a silicon quantum dot solution, wherein the silicon quantum dot solution includes silicon quantum dots; An anthracene compound and a free radical initiator are added to the silicon quantum dot solution, and the solution is heated to obtain a light conversion material.

14. The preparation method according to claim 13, wherein The molar ratio of the anthracene compound to the silicon quantum dots is in the range of (5-10):1; and / or The molar ratio of the free radical initiator to the silicon quantum dots is in the range of 1:(50-100); and / or The heating temperature is 50-80°C and the heating time is 15-30h; and / or The surface of the silicon quantum dot is connected to a ligand, and the ligand includes at least one of an alkyl ligand, an acid ligand, a thiol ligand, an amine ligand, a phosphine ligand, an oxide phosphine ligand, a phospholipid, a soft phosphine and a polyvinyl pyridine; and / or The free radical initiator includes one or more of azobisisobutyronitrile, benzoyl peroxide, and dicumyl peroxide.

15. A display device, characterized in that: The light-emitting device comprises the light-emitting device according to any one of claims 1 to 11.

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